Quantum device and method for manufacturing the same

Abstract

To prevent a quantum chip from tilting or positionally shifting with respect to an interposer when a quantum device is heated.SOLUTION: A quantum device includes a quantum chip 1, a first interposer 2 on which the quantum chip 1 is mounted, and bump portions provided at a plurality of locations between the first interposer 2 and the quantum chip 1. The bump portion includes a first bump portion 3 and a second bump portion 4. The first bump portion 3 is at least partially made of a superconducting material, and the second bump portion 4 is made of a material different from that of the first bump portion 3. In a manufacturing method, the first interposer 2 and the quantum chip 1 are connected to each other at a plurality of locations with the first bump portion 3 of the superconducting material and the second bump portion 4 of a material having a higher melting point, or the connection is performed using a bump portion 6 having a high melting point and then the connection using the bump portions 3, 4 of the superconductive materials having low melting points is performed using bump portions having different melting points of the bump portions 3 and 4 of the superconducting materials having the low melting points and the bump portion 6 of the superconductive material having the high melting point.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to quantum devices and methods for fabricating the same. [Background technology]

[0002] Patent Document 1 describes a configuration in which a quantum chip and multiple interposers are stacked and connected. More specifically, it describes a configuration in which the quantum chip and the interposer, and the multiple interposers are bonded to each other with bonding balls. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Pat. No. 9,836,699 Summary of the Invention [Problem to be solved by the invention]

[0004] In a configuration such as that described in Patent Document 1 above, if heat is applied during the manufacturing process, the bonding balls between the quantum chip and the interposer may melt or soften, causing the quantum chip to tilt relative to the interposer or causing them to become misaligned in the planar direction.

[0005] An object of the present invention is to prevent the quantum chip from being tilted or displaced relative to the interposer when a quantum device apparatus on which the quantum chip is mounted is subjected to heat. [Means for solving the problem]

[0006] In order to solve the above problems, the present invention proposes the following means. The quantum device of the present invention comprises a quantum chip, a first interposer on which the quantum chip is mounted, and bump portions provided at multiple locations between the first interposer and the quantum chip, the bump portions comprising a first bump portion and a second bump portion, the first bump portion being at least partially made of a superconducting material, and the second bump portion being made of a material different from the first bump portion.

[0007] In addition, the present invention relates to a method for manufacturing a quantum device comprising a quantum chip and a first interposer on which the quantum chip is mounted, and is characterized in that the first interposer and the quantum chip are connected at multiple points by a first bump portion made of a superconducting material and a second bump portion made of a material having a higher melting point than the first bump portion. In addition, the manufacturing method of a quantum device according to the present invention is a manufacturing method of a quantum device comprising a quantum chip, a first interposer on which the quantum chip is mounted, and a second interposer on which the first interposer is mounted and which transmits and receives signals, and comprises a first step of connecting the first interposer and the quantum chip at multiple locations, and a second step of connecting the first interposer and the second interposer at multiple locations, and is characterized in that the method uses bump parts with different melting points, namely, a low-melting point bump part made of a superconducting material and a high-melting point bump part made of a superconducting material having a higher melting point than the low-melting point bump part, and in that, in the first step and the second step, the connection using the high-melting point bump part is made after the connection using the low-melting point bump part. Effect of the Invention

[0008] According to the present invention, when a quantum device apparatus on which a quantum chip is mounted is subjected to heat, the quantum chip can be prevented from being tilted or displaced with respect to the interposer. [Brief description of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view showing an example of a minimum configuration of a quantum device according to the present invention. [Diagram 2]1A and 1B show a quantum device according to a first embodiment of the present invention, in which (a) is a cross-sectional view and (b) is a bottom view showing the arrangement of bump portions. [Diagram 3] 5A and 5B show a quantum device according to a second embodiment of the present invention, in which (a) is a cross-sectional view and (b) is a bottom view showing the arrangement of bump portions. [Figure 4] FIG. 11 is a layout diagram of bump portions of a quantum device according to a first modified example of the first and second embodiments. [Diagram 5] FIG. 11 is a layout diagram of bump portions of a quantum device according to a second modified example of the first and second embodiments. [Figure 6] FIG. 11 is a layout diagram of bump portions of a quantum device according to a third modified example of the first and second embodiments. [Figure 7] FIG. 11 is a layout diagram of bump portions of a quantum device according to a fourth modified example of the first and second embodiments. [Figure 8] 11A and 11B are cross-sectional views of a quantum device illustrating a method for manufacturing a quantum device according to a third embodiment of the present invention, where (a) shows the device before heating and (b) shows the device after heating. [Figure 9] 11A and 11B are cross-sectional views of a quantum device illustrating a method for manufacturing a quantum device according to a fourth embodiment of the present invention, where (a) shows the device before heating and (b) shows the device after heating. [Figure 10] 13 is a cross-sectional view of a quantum device produced by a quantum device manufacturing method according to a fifth embodiment of the present invention. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] A quantum device according to an example of a minimum configuration of the present invention will be described with reference to FIG. This quantum device comprises a quantum chip 1, a first interposer 2 on which the quantum chip 1 is mounted, and bump portions provided at multiple locations between the first interposer 2 and the quantum chip 1, the bump portions comprising a first bump portion 3 and a second bump portion 4, the first bump portion 3 being at least partially made of a superconducting material, and the second bump portion 4 being made of a material different from the first bump portion 3.

[0011] According to the above configuration, the quantum chip 1 and the first interposer 2 can be electrically connected to each other by the first and second bump portions 3 and 4, and can be supported at multiple locations. In addition, the multiple first and second bump portions 3 and 4 can be made of materials having different melting points, for example.

[0012] Furthermore, a manufacturing method for a quantum device according to a minimum configuration example of the present invention is a manufacturing method for a quantum device comprising the quantum chip 1 and a first interposer 2 on which the quantum chip 1 is mounted, and is characterized in that the first interposer 2 and the quantum chip 1 are connected at multiple points by a first bump portion 3 made of a superconducting material and a second bump portion 4 made of a material having a higher melting point than the first bump portion 3.

[0013] According to the above configuration, when the quantum chip 1 is mounted on the first interposer 2 and then heated for some purpose, specifically, when the first interposer 2 is heated to mount the first interposer 2 on the second interposer 5, the quantum chip 1 can be supported at a predetermined position on the first interposer 2 by not melting the bump portion with a high melting point, either the first bump portion 3 or the second bump portion 4. In the configuration described in Patent Document 1, since a plurality of interposers are stacked, when a quantum chip is bonded to an interposer and then bonded to another interposer, the bonding balls between the quantum chip and the interposer melt or soften due to heating during bonding to the other interposer, and the quantum chip may tilt with respect to the interposer or may be displaced in the surface direction.

[0014] In addition, a manufacturing method for a quantum device according to another minimum configuration example of the present invention is a manufacturing method for a quantum device comprising a quantum chip 1, a first interposer 2 on which the quantum chip 1 is mounted, and a second interposer 5 on which the first interposer 2 is mounted and which transmits and receives signals, and is characterized in that the method comprises a first step of connecting the first interposer 2 and the quantum chip 1 at multiple locations, and a second step of connecting the first interposer 2 and the second interposer 5 at multiple locations, and uses bump portions with different melting points, namely, low-melting point bump portions 3 and 4 made of a superconducting material and a high-melting point bump portion 6 made of a superconducting material having a higher melting point than the low-melting point bump portions 3 and 4, and in that, during the first and second steps, connection is made using the high-melting point bump portion 6 followed by connection using the low-melting point bump portions 3 and 4.

[0015] According to the above configuration, after a connection is made using a high melting point bump portion, a connection is made using a low melting point bump portion under heating at a lower temperature than the high melting point bump portion. Therefore, when a connection is made later, the connection using the high melting point bump used in the previous process is not damaged, and the components of the connected quantum device are not misaligned.

[0016] FIG. 2 shows a first embodiment of the present invention. Reference numeral 10 denotes a quantum chip for performing quantum computing. The quantum computing refers to a function of manipulating data using quantum mechanical phenomena caused by quantum bits, and the quantum chip 10 has a configuration in which a conductor wiring layer of a predetermined circuit pattern is provided on the lower surface 12 of a substrate 11 made of, for example, silicon. The conductor wiring layer is preferably made of a superconducting material. The conductor wiring layer is made of niobium (Nb), niobium nitride, aluminum (Al), indium (In), lead (Pb), tin (Sn), rhenium (Re), palladium (Pd), titanium (Ti), titanium nitride, tantalum (Ta), or an alloy containing any of these. In this embodiment, the normal conductive material used for the conductor wiring other than the conductor wiring connected to the quantum chip is, for example, copper (Cu), silver (Ag), gold (Au), platinum (Pt), or an alloy containing any of these.

[0017] The quantum chip 10 is mounted on a first interposer 20, and they are connected to each other via a plurality of first bump portions 30 and second bump portions 40. The first interposer 20 has an interposer substrate 21, an interposer wiring layer 22 provided on the front surface (the surface facing the quantum chip 10), the back surface (the opposite surface) or inside the interposer substrate 21, and a connecting conductor 23 that penetrates the interposer substrate 21 and electrically connects the interposer wiring layer 22 on the front, back and inside. The interposer substrate 21 is formed of, for example, a silicon substrate. The surface of the interposer substrate 21 is preferably covered with a silicon oxide film (SiO2, TEOS film, etc.). The interposer wiring layer 22 may be formed of a superconducting material such as niobium (Nb). In this case, the interposer wiring layer 22 may be configured to include the same superconducting material as the conductor wiring of the quantum chip 10, or may be configured to include a different superconducting material. The interposer wiring layer 22 may also be configured to include a normal conductive material such as copper (Cu).

[0018] The interposer wiring layer 22 may be formed with a quantum circuit in addition to a simple conductor circuit. For example, the interposer wiring layer 22 may be formed with a magnetic field application circuit (not shown) that applies a magnetic field to a resonator (loop circuit). The interposer wiring layer 22 may be formed with a readout circuit (not shown) that reads out information on the quantum state from the resonator (conductive member). The interposer wiring layer 22 may be formed with a ground electrode circuit. That is, the interposer wiring layer 22 may be formed with a ground electrode circuit as a quantum circuit. In this way, when the quantum circuit is formed in the interposer wiring layer 22, the first interposer 20 functions as a quantum interposer. An oscillator (not shown) may be formed by at least the resonator and the magnetic field application circuit.

[0019] The first bump portion 30 is made of a superconducting material connected to a quantum chip wiring layer on the lower surface 12 of the substrate 11, and has a lower melting point than the material used for the second bump. The second bump portion 40 is made of a superconducting material having a higher melting point than the first bump 30. It is preferable that the difference in melting point between the high melting point and low melting point bump portions is 10° C. or more, desirably 30° C. or more, and more desirably 50° C. or more. Materials that can be used for the first bump portion 30 and the second bump portion 40 include, for example, indium (In), tin (Sn), aluminum (Al), niobium (Nb), bismuth (Bi), yttrium (Y), lead (Pb), and alloys thereof. Of the above materials, it is preferable to form the first bump portion 30 and the second bump portion 40 using materials that have the combination of melting points described in the first embodiment. Furthermore, it is more preferable that the first bump portion 30 contains at least indium (In) and the second bump portion 40 contains at least a metal other than indium (In). For example, it is preferable that the material of the first bump portion 30 is indium (In) and the material of the second bump portion 40 is an alloy of indium (In) and another metal (e.g., an alloy of In and Al), or a metal that does not contain In (e.g., Sn, Al, Nb, Bi, Y, Pb).

[0020] 2(b), in the first embodiment, the second bump portions 40 are arranged at the four corners of a matrix of 4 rows and 4 columns as a whole, and the first bump portions 30 are arranged between these second bump portions 40 (positions other than the four corners). Note that the bump portions between the second bump portions 40 at the four corners may also be made of a high melting point material (not only the four corners, but the entire first and fourth rows and the entire first and fourth columns, i.e., the entire outer periphery) to form the second bump portions 40 with a high melting point, and the inner region surrounded by these second bump portions 40 to form the first bump portions 30 with a low melting point.

[0021] Furthermore, the first interposer 20 is mounted on a second interposer 50 . The second interposer 50 is electrically connected to the first interposer 20, and includes an interposer substrate 51, an interposer wiring layer 52 provided on the front surface (the surface on the first interposer 20 side), the back surface (the opposite surface) or inside the interposer substrate 51, and a connection conductor 53 that electrically connects the front, back and inside interposer wiring layers 52. The interposer substrate 51 is preferably formed of, for example, a silicon substrate, similar to the first interposer 20, and is preferably covered with a silicon oxide film (SiO2, TEOS film, etc.). The interposer wiring layer 52 may be formed of a superconducting material such as niobium (Nb). In this case, the interposer wiring layer 52 may be configured to include the same superconducting material as the conductor wiring of the quantum chip 10 or the first interposer 20, or may be configured to include a different superconducting material. It may also be configured to include a normal conductive material such as copper (Cu).

[0022] The second interposer 50 and the first interposer 20 are electrically connected by a plurality of third bump portions 60. The third bump portions 60 are made of a superconducting material having the same melting point as the first bump portions 30 or a lower melting point than the second bump portions 40. The third bump portions 60 connect the interposer wiring layer 22 on the lower surface of the first interposer 20 and the interposer wiring layer 52 on the upper surface of the second interposer 50, and are arranged in a matrix of, for example, 4 rows and 4 columns according to the positions and numbers of these connection electrodes. Materials that can be used for the third bump portion 60 include, for example, indium (In), tin (Sn), aluminum (Al), niobium (Nb), bismuth (Bi), yttrium (Y), lead (Pb), and alloys thereof. Of the above materials, a superconducting material having the same melting point as the first bump portion 30 in the first embodiment or a lower melting point than the second bump portion 40 is used. Furthermore, it is more preferable that the third bump portion 60 contains at least indium (In) and the second bump portion 40 contains at least a metal other than indium (In). Examples of combinations of materials constituting the first bump portion 30, the second bump portion 40, and the third bump portion 60 include the combinations shown in Table 1 below.

[0023] [Table 1]

[0024] The quantum device having the above configuration is 1st step The quantum chip 10 is placed on the first interposer 20 with the first bump portion 30 and the second bump portion 40 placed in predetermined positions sandwiched between them, and the first bump portion 30 and the second bump portion 40 are melted by heating from the quantum chip 10 side or the first interposer 20 side, thereby electrically and mechanically connecting the quantum chip 10 and the first interposer 20. 2nd process The first interposer 20 is placed on the second interposer 50 with the third bump portion 60 placed in a predetermined position therebetween, and the third bump portion 60 is melted by heating from the second interposer 50 side or the first interposer 20 side, thereby electrically and mechanically connecting the first interposer 20 and the second interposer 50. It is assembled in two steps.

[0025] Here, when the third bump portion 60 is heated for mounting on the second interposer 50, its melting point is lower than the melting point of the second bump portion 40. Therefore, even if the first bump portion 30 melts or softens due to the heating of the third bump portion 60, the four corners of the quantum chip 10 can be supported by the second bump portion 40, which has a higher melting point. Therefore, it is possible to prevent the quantum chip 10 from shifting in position, tilting, or even poor connection relative to the first interposer 20.

[0026] Fig. 3 shows a second embodiment of the present invention. In Fig. 3, components common to Fig. 2 are given the same reference numerals and description thereof will be simplified. The quantum device of the second embodiment has a configuration in which the quantum chip 10 is placed on the first interposer 20 and electrically and mechanically connected therebetween by a plurality of first bump portions 30 and a plurality of second bump portions having a higher melting point, and the first interposer 20 is placed on the second interposer 50 and electrically and mechanically connected therebetween by a plurality of third bump portions 60.

[0027] As shown in FIG. 3(b), the first bump portions 30 and the second bump portions 40 are arranged in a matrix of 4 rows and 4 columns overall, and as a result of the first bump portions 30 and the second bump portions 40 being arranged alternately, a configuration is obtained in which the first bump portions 30, which have a low melting point, are arranged between the second bump portions 40, which have a high melting point.

[0028] The quantum device of the second embodiment can be assembled through the first and second steps described for the quantum device of the first embodiment. In this second embodiment, when the first interposer 20 on which the quantum chip 10 is mounted is placed on the second interposer 50 and heated, even if the first bump portion 30 between the quantum chip 10 and the first interposer 20 melts or softens, the second bump portions 40 with a high melting point are arranged on both sides of it, and therefore the quantum chip 10 can be supported while maintaining its shape without melting or softening even in the second heating process, thereby preventing misalignment, tilt, and poor connection between the quantum chip 10 and the first interposer 20.

[0029] FIG. 4 shows a first modified example of the arrangement of the first bump portion 30 and the second bump portion 40. In FIG. The first bump portions 30 and second bump portions 40 of this first modified example are arranged in a matrix of 6 rows and 6 columns overall, with three of the four corners of this matrix being second bump portions 40 and the remaining being first bump portions 30. That is, according to the arrangement shown in FIG. 4, the quantum chip 10 can be supported at three points (the minimum number of support points required to identify a plane supporting the quantum chip 10) by the second bump portions 40 arranged at the three corners. Therefore, even if the first bump portions 30 soften or melt during the process of placing the first interposer 20 on the second interposer 50 and heating it again, the quantum chip 10 can be supported at three points by the second bump portions 40, which have a higher melting point than the first bump portions 30. Therefore, it is possible to prevent the quantum chip 10 from shifting in position, tilting, or poor connection due to attachment to the second interposer 50.

[0030] FIG. 5 shows a second modified example of the arrangement of the first bump portion 30 and the second bump portion 40. In FIG. The first bump portion 30 and the second bump portion 40 of this second modified example are arranged in a matrix of 6 rows and 6 columns overall, and within this matrix, the first bump portion 30 with a low melting point is arranged in the area surrounded by dashed line A in Figure 5, specifically, in a planar view, in the area where the area having the quantum circuit of the quantum chip 10 overlaps on the first interposer 20 (note that generally, quantum circuits are not arranged on the entire surface of the quantum chip, but are formed in an area inward from the surface), and the second bump portion 40 with a high melting point is arranged outside the area surrounded by dashed line A. Furthermore, even outside the area surrounded by dashed line A, the first bump portion 30 is arranged in a part thereof while ensuring the regularity of the arrangement in which the first bump portion 30 is sandwiched between the second bump portions 40.

[0031] That is, according to the arrangement shown in Fig. 5, the connection area of ​​the quantum chip 10, which requires a high degree of superconductivity, with the quantum circuit is connected by a first bump portion 30 with a low melting point, and a second bump portion 40 with a high melting point is arranged on the outside of that. Indium (In) is preferable as the material for the bump connecting to the quantum circuit from the viewpoint of superconductivity, but it has a relatively low melting point. However, the second bump portion 40 with a high melting point is arranged on the outside of that. With this arrangement, the quantum chip 10 can be supported by the second bump portion 40 with a high melting point arranged on the outside. Therefore, even if the first bump portion 30 softens or melts when the first interposer 20 is placed on the second interposer 50 and heated, the second bump portion 40, which has a higher melting point than the first bump portion 30, can prevent the quantum chip 10 from shifting in position, tilting, or poor connection when the first interposer 20 is attached to the second interposer 50.

[0032] FIG. 6 shows a third modified example of the arrangement of the first bump portion 30 and the second bump portion 40. In FIG. The first bump portions 30 and second bump portions 40 in this first modified example are arranged in a matrix of 6 rows and 6 columns overall, with the second bump portions 40 arranged at 20 locations surrounding the outer periphery of this matrix, and the first bump portions 30 arranged at 16 locations surrounded by these. In this third modified example, even if the first bump portion 30 softens or melts due to heating of the third bump portion 60 accompanying the mounting of the second interposer 50, the entire peripheral portion of the quantum chip 10 can be uniformly supported by the high-melting point second bump portion 40 arranged around it, thereby preventing the quantum chip 10 from tilting, shifting, or causing connection problems.

[0033] FIG. 7 shows a fourth modified example of the arrangement of the first bump portion 30 and the second bump portion 40. In FIG. The first bump portions 30 and second bump portions 40 of this fourth modified example are arranged in a matrix of 6 rows and 6 columns overall, with the first bump portions 30 having a relatively low melting point and the second bump portions 40 having a relatively high melting point arranged alternately. In this fourth modified example, since the first bump portion 30 is sandwiched between the second bump portions 40, even if one of the first bump portions 30 softens or melts due to heating of the third bump portion 60 accompanying the mounting of the second interposer 50, the second bump portions 40 on both sides can support the quantum chip 10, thereby preventing the quantum chip 10 from tilting, shifting, or causing connection problems.

[0034] As a fifth modification of the material of the bump portion described above, a fourth bump portion that does not connect the quantum computing circuit of the quantum chip 10 and the circuit on the first interposer side may be used in addition to the second bump portion 40 or in place of a part of the second bump portion 40. That is, as with the second bump portion 40, a material having a higher melting point than the first and third bump portions 30 and 60 may be used for this fourth bump portion, so that the quantum chip 10 can be supported without melting or softening when heated. In addition to the superconducting material used for the second bump portion 40, the fourth bump portion may be made of a normal conductive material such as copper (Cu), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), or an alloy containing any of these. In addition, at least one of the metal pattern on the quantum chip 10 side and the metal pattern on the first interposer 20 side connected by this fourth bump portion is a metal pattern that is not connected to the circuit (electrically insulated and isolated from the circuit). As a result, no current flows through the fourth bump portion, and so there is no electrical effect on the quantum circuit of the quantum chip 10. It is preferable that the fourth bump portion is not connected to at least the circuit on the quantum chip 10 side. The location of the fourth bump portion is preferably outside the first bump portion, as in the first, second, or third modified examples. The fifth modified example can also be assembled through the two steps, the first step and the second step, described in the quantum device of the first embodiment.

[0035] 8A and 8B show a method for manufacturing a quantum device according to the third embodiment, in which (a) shows the state before mounting and (b) shows the state during mounting. In the manufacturing process of the quantum device shown in Figure 8, first, a first bump piece 30a which is part of the first bump portion 30 provided on the quantum chip 10 side and a first bump piece 30a which is of the same composition and arranged in the same manner provided on the first interposer 20 side are opposed to each other as shown in Figure 8(a), and a second bump piece 40a which is part of the second bump portion 40 and a second bump piece 40a which is of the same composition and arranged in the same manner provided on the first interposer 20 side are aligned to face each other.

[0036] 8(b), when the quantum chip 10 is heated while being pressed against the first interposer 20 on the base 70 by a heating and pressing machine 80, the first bump pieces 30a that were facing each other melt and diffuse into one piece, forming the first bump portion 30. Also, the second bump pieces 40a that were facing each other melt and diffuse into one piece, forming the second bump portion 40 made of a material with a higher melting point than the first bump portion 30. 8(b), the quantum chip 10 is mounted on the first interposer 20 after waiting for the first bump portion 30 and the second bump portion 40 to cool and solidify. The first interposer 20 on which the quantum chip 10 is mounted is then placed on the second interposer 50, and heated and pressurized between the platen 70 and the heating and pressing machine 80, thereby manufacturing a quantum device.

[0037] 9A and 9B show a method for manufacturing a quantum device according to the fourth embodiment, in which (a) shows the state before mounting, and (b) shows the state during mounting. In the manufacturing process of the quantum device shown in Figure 9, first, a first bump piece 30a which is part of the first bump portion 30 provided on the quantum chip 10 side and a first bump piece 30a which is of the same composition and arranged in the same way provided on the first interposer 20 side are aligned opposite each other as shown in Figure 9(a), and a second bump piece 40b which is part of the second bump portion 40 and a second bump piece 40c which is of the same arrangement provided on the first interposer 20 side are aligned opposite each other. Here, the second bump pieces 40b and 40c are formed from single metals (or alloys of different compositions) that are different from each other, and have the property of increasing their melting points by being integrated through melting and diffusion. 9(b), when the quantum chip 10 is heated while being pressed against the first interposer 20 on the base 70 by a heating and pressing machine 80, the first bump pieces 30a that were facing each other melt and diffuse into one body, forming the first bump portion 30. Also, the second bump pieces 40b, 40c that were facing each other melt and diffuse into one body, forming the second bump portion 40 that has a higher melting point than the first bump. 9(b), the quantum chip 10 is mounted on the first interposer 20 after waiting for the first bump portion 30 and the second bump portion 40 to cool and solidify. The first interposer 20 with the quantum chip 10 mounted thereon is then placed on the second interposer 50, and heated and pressurized between the platen 70 and the heating and pressing machine 80, thereby manufacturing a quantum device.

[0038] In addition, using a similar technique, the first bump piece on the quantum chip 10 side and the first bump piece on the first interposer 20 side may be made of different metals (or alloys) and melted and diffused together to lower the melting point.

[0039] FIG. 10 shows a method for manufacturing a quantum device according to the fifth embodiment. This fifth embodiment has a configuration in which the quantum chip 10 and the first interposer 20 are connected by a plurality of first bump portions 30, and the first interposer 20 and the second interposer 50 are connected by a plurality of second bump portions 40 having a higher melting point than the first bump portions 30. In this fifth embodiment, a quantum device can be manufactured by mounting a first interposer 20 on a second interposer 50 using a high melting point second bump portion 40, and then mounting the quantum chip 10 on the first interposer 20 using the first bump portion 30.

[0040] Here, since the melting point of the second bump portion 40 is higher than that of the first bump portion 30, the second bump portion 40 does not soften or melt due to heating during the process of mounting the quantum chip 10 on the first interposer 20, and therefore tilt, misalignment, or poor connection between the first interposer 20 and the second interposer 50 can be prevented. From the standpoint of superconducting performance, it is desirable to use a first bump portion 30 with a low melting point to connect the quantum chip 10 and the first interposer 20; however, contrary to the example of Figure 10, a second bump portion 40 with a high melting point may be used between the quantum chip 10 and the first interposer 20, and the first bump portion 30 may be provided between the first interposer 20 and the second, and the quantum chip 10 and the first interposer 20 may be mounted first.

[0041] The number and arrangement of quantum chips and interposers are not limited to those in the above-described embodiment, and the number, arrangement, constituent materials and combinations of bump portions are not limited to those in the above-described embodiment.

[0042] Although an embodiment of the present invention has been described in detail above with reference to the drawings, the specific configuration is not limited to this embodiment, and design modifications and the like are also included within the scope of the present invention that does not deviate from the gist of the present invention. In addition, the above embodiment shows an example of solving the problem of the mounting state of the quantum chip being damaged when heating is performed to join the second interposer and the first interposer. However, the present invention can also be implemented to solve the problem of the mounting state of the quantum chip being damaged when a heating process is required for some purpose after mounting the quantum chip on the first interposer during the manufacture of a quantum device.

[0043] A part or all of the above-described embodiments can be described as in the following supplementary notes, but are not limited to the aspects specified in the supplementary notes. (Appendix 1) Quantum chips and a first interposer on which the quantum chip is mounted; a plurality of bump portions provided between the first interposer and the quantum chip, the bump portions including a first bump portion and a second bump portion; at least a portion of the first bump portion is made of a superconducting material; The second bump portion is made of a material different from that of the first bump portion. Quantum devices. (Appendix 2) The plurality of bump portions include a first bump portion and a second bump portion made of a material having a higher melting point than the first bump portion. 2. The quantum device of claim 1. (Appendix 3) the first bump portion is provided in a region of the quantum chip that is connected to a circuit made of a superconducting material, The second bump portion is provided in an area other than an area connected to a circuit made of a superconducting material of the quantum chip. 3. The quantum device of claim 2. (Appendix 4) The first bump portion is disposed inside the plurality of second bump portions. 4. The quantum device of claim 2 or 3. (Appendix 5) The first bump portion is provided in a region adjacent to the quantum chip, The second bump portion is provided in a region farther from the region near the quantum chip, 5. The quantum device according to any one of claims 2 to 4. (Appendix 6) The second bump portion is disposed at at least three points outside the area where the first bump portion is present. 6. The quantum device according to any one of claims 2 to 5. (Appendix 7) The first bump portion and the second bump portion are arranged in a matrix as a whole. 7. The quantum device according to any one of claims 2 to 6. (Appendix 8) A second interposer is provided on a surface of the first interposer opposite to a surface on which the quantum chip is mounted, A third bump portion having a lower melting point than the second bump portion is provided between the first interposer and the second interposer. 8. The quantum device according to any one of claims 2 to 7. (Appendix 9) the first bump portion includes at least indium, and the second bump portion includes at least a material other than indium; 9. The quantum device according to any one of claims 2 to 8. (Appendix 10) Quantum chips and a first interposer on which the quantum chip is mounted; A method for manufacturing a quantum device comprising: The first interposer and the quantum chip are connected at a plurality of points by a first bump portion made of a superconducting material and a second bump portion made of a superconducting material having a higher melting point than the first bump portion. A method for manufacturing a quantum device comprising the steps of: (Appendix 11) A step of disposing a second interposer on a surface of the first interposer opposite to a surface on which the quantum chip is mounted; and connecting the second interposer and the first interposer at a plurality of locations by third bump portions having a lower melting point than the second bump portions. 11. A method for manufacturing a quantum device as described in claim 10. (Appendix 12) At least one of the second and third bump portions is formed by mutually diffusing a first bump portion metal piece provided on one of the conductors connected to each other by these bump portions and a second bump portion metal piece provided on the other of the conductors. 12. A method for manufacturing the quantum computer described in appendix 11. (Appendix 13) Quantum chips and a first interposer on which the quantum chip is mounted; a second interposer that carries the first interposer and transmits and receives signals; A method for manufacturing a quantum device comprising: A first step of connecting the first interposer and the quantum chip at a plurality of points; a second step of connecting the first interposer and the second interposer at a plurality of points; Equipped with using bump parts having different melting points, i.e., a low melting point bump part made of a superconducting material and a high melting point bump part made of a superconducting material having a higher melting point than the low melting point bump part, and performing connection using the low melting point bump part after connection using the high melting point bump part in the first and second steps; A method for manufacturing a quantum device comprising the steps of: [Industrial Applicability]

[0044] The present invention can be used in quantum device apparatus and the manufacture thereof. [Explanation of symbols]

[0045] 1. Quantum chip 2 First Interposer 3 (1st, low melting point) bump section 4 (second, low melting point) bump section 5 Second Interposer 6 High melting point bump 10. Quantum Chip 11 Substrate 12 Bottom side 20 1st Interposer 21 Interposer board 22 Interposer wiring layer 23 Connecting conductor 30 First Bump Section 30a First bump piece 40 2nd Bump Section 40a, 40b, 40c Second bump piece 50 2nd Interposer 51 Interposer board 52 Interposer wiring 53 Connecting conductor 60 3rd Bump Section 70 Fixed Plate 80 Heating and pressure machine

Claims

1. Quantum chips and a first interposer on which the quantum chip is mounted; a plurality of bump portions provided between the first interposer and the quantum chip, the bump portions including a first bump portion and a second bump portion; the first bump portion is at least partially made of a superconducting material; The second bump portion is made of a material different from that of the first bump portion. Quantum devices.

2. The plurality of bump portions include a first bump portion and a second bump portion made of a material having a higher melting point than the first bump portion. The quantum device of claim 1 .

3. the first bump portion is provided in a region of the quantum chip that is connected to a circuit made of a superconducting material, The second bump portion is provided in an area other than an area connected to a circuit made of a superconducting material of the quantum chip. The quantum device of claim 2.

4. The first bump portion is disposed inside the plurality of second bump portions. The quantum device of claim 2.

5. The first bump portion is provided in a region adjacent to the quantum chip, The second bump portion is provided in a region farther from the region near the quantum chip. The quantum device of claim 2.

6. A second interposer is provided on a surface of the first interposer opposite to a surface on which the quantum chip is mounted, a third bump portion having a lower melting point than the second bump portion is provided between the first interposer and the second interposer; The quantum device of claim 2.

7. the first bump portion includes at least indium, and the second bump portion includes at least a material other than indium; The quantum device of claim 1 .

8. Quantum chips and a first interposer on which the quantum chip is mounted; A method for manufacturing a quantum device comprising: The first interposer and the quantum chip are connected at a plurality of points by a first bump portion made of a superconducting material and a second bump portion made of a material having a higher melting point than the first bump portion. A method for manufacturing a quantum device comprising the steps of:

9. A step of disposing a second interposer on a surface of the first interposer opposite to a surface on which the quantum chip is mounted; and connecting the second interposer and the first interposer at a plurality of locations by third bump portions having a lower melting point than the second bump portions. The method for manufacturing a quantum device according to claim 8 .

10. Quantum chips and a first interposer on which the quantum chip is mounted; a second interposer carrying the first interposer and transmitting / receiving signals; A method for manufacturing a quantum device comprising: A first step of connecting the first interposer and the quantum chip at a plurality of points; a second step of connecting the first interposer and the second interposer at a plurality of points; Equipped with using bump parts having different melting points, i.e., a low melting point bump part made of a superconducting material and a high melting point bump part made of a superconducting material having a higher melting point than the low melting point bump part, and performing connection using the low melting point bump part after connection using the high melting point bump part in the first and second steps; A method for manufacturing a quantum device comprising the steps of:

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