Metal member for manufacturing vapor chamber, manufacturing method thereof, and manufacturing method for vapor chamber

Abstract

To provide a manufacturing method for a vapor chamber capable of providing a wick on a wall surface of a sealed space of the vapor chamber more simply than conventional arts.SOLUTION: A metal member for manufacturing a vapor chamber is used to form at least a first member when manufacturing a vapor chamber that forms a sealed space in which working fluid is sealed using the first member made of metal and a second member. The metal member for manufacturing a vapor chamber comprises, in order from the side that forms the sealed space, a first metal layer 5, an etching protection layer 6 partially formed by hardening a photoresist that uses 10% by weight to 90% by weight of a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer relative to an amount of a reactive diluent and that contains carbon that provides electrical conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, and a second metal layer 7 formed by plating.SELECTED DRAWING: Figure 2A

Description

[Technical field]

[0001] The present invention relates to a metal component for use in manufacturing a vapor chamber, which is made of a metal that forms an enclosed space in which a working fluid is sealed, a manufacturing method for the same, and a manufacturing method for the vapor chamber. [Background technology]

[0002] In recent years, the miniaturization and performance improvement of electronic devices has accelerated. As performance improves, the amount of heat generated by semiconductor elements and integrated circuits has also increased, and efficient methods for cooling the heat have become an issue in pushing forward with further miniaturization and performance improvement of electronic devices.

[0003] One method of dissipating heat from semiconductors is to use a highly thermally conductive paste or solder as a die bond material on the back surface of the semiconductor to guide the heat to a cold plate. Another method is to form thermal vias on the active surface of the semiconductor and guide the heat to a heat conductor by soldering through an electronic circuit board. Mobile devices such as smartphones have limitations on the thickness of the mounting, so graphite sheets are sometimes used nowadays.

[0004] In order to improve heat dissipation, the introduction of vapor chambers, which are flat heat dissipation devices that use the principle of heat pipes, has been considered. However, for smartphones, the thickness of the case is limited, so the thickness of the vapor chamber must be 0.3 mm or less, which has not been realized (Non-Patent Document 1).

[0005] A vapor chamber is a flat heat dissipation device that uses the principle of a heat pipe, and is a heat spreader that dissipates heat. Inside the vapor chamber is a decompressed sealed space, filled with a working fluid for transferring heat. When the working fluid is heated by a heat source, the working fluid absorbs latent heat and evaporates. The vapor diffuses into the sealed space, and when it reaches the upper inner wall surface that is in contact with the heat sink, it is cooled, releases latent heat, and returns to liquid. A structure called a wick that generates capillary force is placed on the inner wall of the vapor chamber or in the sealed space, and the working fluid that has returned to liquid moves by capillary action. The wick is shaped to guide the working fluid toward the heat source, and the cycle of the working fluid absorbing heat and evaporating again is repeated. This allows the heat generated from a small heat source to be diffused over a wide area.

[0006] Since the vapor chamber dissipates heat by circulating the working fluid, the structural design of the wick greatly affects the performance of the vapor chamber. Prior art related to vapor chambers includes the following. For example, Patent Document 1 describes a vapor chamber in which a capillary flow path is formed by stacking multiple intermediate plates in an enclosed space. Each intermediate plate has fine holes as a flow path, and the working fluid is guided to the heat source by capillary action.

[0007] Patent Document 2 describes a vapor chamber with protrusions on the top and bottom of a sealed space. The feature is that a wick integrated with the container can be formed by digging out a metal plate and providing upright plate-like fins at a specified interval.

[0008] Patent Document 3 describes a vapor chamber in which a wick is formed by spraying molten copper powder onto an aluminum housing. This vapor chamber forms the wick by thermal spray molding, and is characterized in that, compared to the above-mentioned methods, it does not require a process for forming a fine structure.

[0009] In Patent Document 4, after creating an enclosed space in which a working fluid circulates, a wick covered with metal is produced by metal plating.

[0010] Patent Document 5 describes forming an enclosed space through which the working fluid circulates by etching or pressing. Patent Document 6 also proposes forming an enclosed space by etching and further providing fine recesses in the wall surface of the enclosed space by etching.

[0011] Patent Document 7 discloses a method of forming a wick by partially providing an etching stop layer below a metal layer to be etched and etching a part of the metal layer below that. [Prior art documents] [Patent documents]

[0012] [Patent Document 1] JP 2010-28055 A [Patent Document 2] JP 2007-3164 A [Patent Document 3] JP 2011-102691 A [Patent Document 4] JP 2015-10765 A [Patent Document 5] JP 2017-172871 A [Patent Document 6] JP 2018-128208 A [Patent Document 7] International Publication No. 2020 / 149223

[0013] [Non-Patent Document 1] Apple to adopt vapor chamber for mobile devices in iPhone, to increase thermal conductivity and introduce more efficient cooling system May25.2017 Correiente.Top Summary of the Invention [Problem to be solved by the invention]

[0014] As semiconductors become more sophisticated and smaller, heat generation from semiconductor chips has become a problem, and more efficient heat dissipation methods are needed. As mentioned above, the most commonly used method is to release heat from the back surface of the semiconductor. The back surface of the semiconductor is often connected to a heat conductor or heat sink via a bonding material such as thermal grease, silver paste, or solder. However, with the above methods, the thermal resistance increases due to the distance from the element to the heat sink and the thermal conductivity of the bonding material. A more efficient heat dissipation mechanism is needed.

[0015] Vapor chambers that use the principle of heat pipes are suitable for cooling semiconductors. To use vapor chambers in thin mobile devices such as mobile phones, thinner vapor chambers are required. The cooling capacity of a vapor chamber depends on the shape of the wick that facilitates the movement of the working fluid. A wick must be formed that facilitates the movement of the working fluid by capillary action.

[0016] In order to obtain a thin vapor chamber, it is effective to form a recess that forms a sealed space by etching a metal member, and the formation of the wick is also performed by etching. In Patent Document 6, a groove is formed by a first half-etching, and the formed groove is further half-etched to form the wick. It is difficult to control the etching depth uniformly by half-etching.

[0017] Patent Document 7 discloses a method of providing a wick by providing an etching stop layer having an opening between a first metal layer and a second metal layer, removing the first metal layer by etching, and etching a part of the second metal layer that contacts the opening of the etching stop layer. However, the method of providing an etching stop layer having an opening is complicated.

[0018] As described above, etching is performed from one side of a metal component to provide a recess in the metal component that forms an enclosed space, and there is a demand for a method of manufacturing a vapor chamber that can provide a wick on the wall surface of the recess more easily than before. [Means for solving the problem]

[0019] The metal component for manufacturing a vapor chamber according to the present invention is a metal component for manufacturing a vapor chamber, which is used to form at least the first component when manufacturing a vapor chamber comprising a first component made of metal and a second component made of metal that forms, together with the first component, an airtight space in which a working fluid is sealed, and is characterized in that, from the side forming the airtight space, the metal component for manufacturing a vapor chamber comprises a first metal layer, a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer is used in an amount of 10% by weight to 90% by weight relative to the amount of reactive diluent, and a photoresist to which carbon that imparts conductivity, which is one or more of carbon powder, carbon fiber, and graphite, is added, to form an etching protection layer that is partially formed by hardening the photoresist, and a second metal layer that is formed by plating.

[0020] In the metal component for manufacturing a vapor chamber according to the present invention, it is preferable that an etching stop layer is provided on the outside of the second metal layer.

[0021] In the metal member for manufacturing a vapor chamber according to the present invention, the amount of carbon added is preferably 1 part by weight or more and 80 parts by weight or less relative to the amount of components other than carbon in the etching protection layer.

[0022] In the metal component for manufacturing a vapor chamber according to the present invention, it is preferable that the etching protection layer, which is formed partially, is formed continuously.

[0023] In the metal component for manufacturing a vapor chamber according to the present invention, it is preferable that the etching protection layer formed partially is formed in an isolated manner.

[0024] The manufacturing method of a metal member for manufacturing a vapor chamber according to the present invention is a manufacturing method of a metal member for manufacturing a vapor chamber, which is used to form at least the first member when manufacturing a vapor chamber comprising a first member made of metal and a second member made of metal that forms an airtight space in which a working fluid is sealed together with the first member, and is characterized in that a metal plate is used as the first metal layer, and a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer is used at 10% by weight to 90% by weight relative to the amount of reactive diluent on the inside of the area that forms the airtight space on one side of the first metal layer, a photoresist to which carbon that imparts conductivity, which is one or more of carbon powder, carbon fiber, and graphite, is added is hardened to partially form an etching protection layer, and a second metal layer is provided by plating on the surface on the etching protection layer side.

[0025] In the method for producing a metal member for producing a vapor chamber according to the present invention, it is preferable to provide an etching stop layer on the outer side of the second metal layer.

[0026] Furthermore, in the manufacturing method of metal components for manufacturing vapor chambers according to the present invention, it is preferable to form the etching protection layer by applying a photoresist to the inside of the region forming the sealed space of the first metal layer, using a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer in an amount of 10% by weight to 90% by weight relative to the amount of reactive diluent, and adding carbon that imparts conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, hardening the photoresist in specified locations, and removing the unhardened photoresist.

[0027] Furthermore, in the method for manufacturing a metal component for manufacturing a vapor chamber according to the present invention, it is preferable to form the etching protection layer by applying ink by silk screen, inkjet or dispenser to a predetermined location inside the area forming the sealed space of the first metal layer and curing the ink.

[0028] In addition, in the method for manufacturing a metal component for manufacturing a vapor chamber according to the present invention, it is preferable to impart electrical conductivity to the etching protection layer and to provide a second metal layer by plating on the surface of the first metal layer and the partially formed etching protection layer.

[0029] In the method for producing a metal member for producing a vapor chamber according to the present invention, it is preferable that the etching protection layer is formed continuously.

[0030] In the method for producing a metal member for producing a vapor chamber according to the present invention, it is preferable that the etching protection layer is formed in isolation.

[0031] The method for manufacturing a vapor chamber according to the present invention is a method for manufacturing a vapor chamber comprising a first member made of metal and a second member made of metal that forms an enclosed space in which a working fluid is sealed together with the first member, and is characterized in that, from the side forming the enclosed space, the metal member for manufacturing a vapor chamber comprises a first metal layer, an etching protection layer partially formed by hardening a photoresist to which is added carbon that provides conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, using 10% by weight to 90% by weight of a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer with respect to the amount of a reactive diluent, and a second metal layer formed by plating, forming an outer frame etching protection layer on the first metal layer except for the area that forms the enclosed space, etching the first metal layer side inside the outer frame etching protection layer, removing all of the first metal layer and a part of the second metal layer that is not covered by the partially formed etching protection layer, removing the outer frame etching protection layer and the partially formed etching protection layer, and using a member having a recess on one side as the first member, and sealing the recess of the first member with the second member to form the enclosed space.

[0032] Furthermore, in the method for manufacturing a vapor chamber according to the present invention, it is preferable to provide an etching stop layer on the outside of the second metal layer of the metal component for manufacturing the vapor chamber, and to remove all of the second metal layer that is not covered by the partially formed etching protection layer by the etching. Effect of the Invention

[0033] According to the present invention, a thin vapor chamber with good cooling efficiency can be provided. Also, the manufacturing process of the vapor chamber of the present invention can be simplified. [Brief description of the drawings]

[0034] [Figure 1A] 1 shows a cross section of a vapor chamber according to an embodiment of the present invention. [Figure 1B] 4 shows a cross section of another vapor chamber according to an embodiment of the present invention. [Figure 2A] 1 shows a cross section of a metal member for manufacturing a vapor chamber according to embodiment 1 of the present invention. [Figure 2B] 1 shows a plan view of an etching protection layer formed on a metal component for manufacturing a vapor chamber according to embodiment 1 of the present invention. [Figure 2C] 1 shows a plan view of an etching protection layer formed on another metal component for manufacturing a vapor chamber according to embodiment 1 of the present invention. [Figure 2D] 1 shows a plan view of an etching protection layer formed on another metal component for manufacturing a vapor chamber according to embodiment 1 of the present invention. [Figure 2E] 1 shows a plan view of an etching protection layer formed on another metal component for manufacturing a vapor chamber according to embodiment 1 of the present invention. [Diagram 3] 1 shows a cross section of a metal member for manufacturing a vapor chamber according to a second embodiment of the present invention. [Figure 4] 1 shows a cross section of a metal member for manufacturing a vapor chamber according to embodiment 3 of the present invention. [Diagram 5]1 shows an etching protection layer coating step in a method for manufacturing a metal member for manufacturing a vapor chamber according to an embodiment of the present invention. [Figure 6] 4 shows another etching protection layer application step in the method for producing a metal member for producing a vapor chamber according to an embodiment of the present invention. [Figure 7] 1 shows an outer frame etching protection layer application step of a manufacturing method for a vapor chamber according to embodiment 1 of the present invention. [Figure 8] 4 shows an etching step of the method for manufacturing the vapor chamber according to the first embodiment of the present invention. [Figure 9] 1 shows an etching protection layer removing step in the manufacturing method for the vapor chamber according to the first embodiment of the present invention. [Figure 10] 10 shows an etching protection layer removing step in a manufacturing method for a vapor chamber according to a second embodiment of the present invention. [Figure 11] 13 shows an etching protection layer removing step in the manufacturing method of the vapor chamber according to the third embodiment of the present invention. [Figure 12A] 1 shows a working fluid sealing passage in a multi-sided metal component for manufacturing a vapor chamber according to an embodiment of the present invention. [Figure 12B] 1 shows another working fluid sealing passage in a multi-sided metal component for manufacturing a vapor chamber according to an embodiment of the present invention. [Figure 13A] 1 shows a plan view of an outer frame etching protection layer formed on a metal component for manufacturing another vapor chamber according to an embodiment of the present invention. [Figure 13B] 1 shows a plan view of an outer frame etching protective layer formed on a metal component for manufacturing another vapor chamber according to an embodiment of the present invention. [Figure 14] 13 shows an etching stop layer removing step in the method for producing a vapor chamber according to the third embodiment of the present invention. [Figure 15] 2 shows an end of a wall surface of a recess after removal of an etching protection layer in the method for manufacturing a vapor chamber according to the first embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0035] A cross section of a vapor chamber 1 according to an embodiment of the present invention is shown in Figure 1. The vapor chamber 1 comprises a first member 2 made of metal, and a second member 3 made of metal which, together with the first member 2, forms an enclosed space 4 in which a working fluid is sealed. The enclosed space 4 is formed by sealing a recess formed in the first member 2 with the second member 3. The working fluid is sealed in the enclosed space 4. The first member 2 is sealed by adhering the second member 3 to the periphery of the recess formed in the first member 2.

[0036] A device such as a semiconductor, which is an object to be cooled, is connected in contact with the lower surface 2a of the first member 2 constituting the vapor chamber 1. Depending on the form and use state of the mobile device constituted by the device, the device may be connected in contact with the second member 3, not the first member 2. The working fluid sealed in the sealed space 4 is evaporated from liquid to gas by the heat of the device, which is an object to be cooled. The device is cooled by the heat of evaporation of the working fluid. The evaporated working fluid moves inside the sealed space 4 to the side that does not contact the device. The working fluid that moves to the sealed space 4 that does not contact the device is cooled and becomes liquid. The liquid working fluid moves to the device side through a flow path formed on the inner surface of the recess that forms the sealed space 4 of the first member 2, and is evaporated by the heat of the device. The wick formed on the inner surface of the recess of the first member 2 becomes the flow path. The cooling capacity of the vapor chamber 1 is exerted by repeating the evaporation and liquefaction of the working fluid.

[0037] The vapor chamber 1 includes an evaporation section that contacts the device to cool the device, and a liquefaction section that cools and liquefies the vaporized working fluid without contact. The shape is not particularly limited, and the shape can be designed according to the heat source and heat guide path in the electronic device, and the flow path width of the working fluid can also be designed arbitrarily according to practical use. It is desirable to increase the contact area of ​​the contact surface of the vapor chamber 1 with the device that is the heat source. The vapor chamber 1 needs to include an evaporation section and a liquefaction section, and the size of the vapor chamber 1 changes depending on the size of the device to be cooled. For example, the vapor chamber 1 is preferably 1 mm or more in width and 3 mm or more in length, and less than 100 mm in width and less than 300 mm in length. If the width is less than 1 mm and the length is less than 3 mm, the sealed space 4 of the vapor chamber 1 cannot be secured sufficiently, and the cooling effect is insufficient. If the width is 100 mm or more and the length is 300 mm or more, the movement of the working fluid is not performed quickly, and the cooling effect is insufficient. The vapor chamber 1 includes at least one sealed space 4, but may have more than one sealed space 4. Each sealed space 4 includes a vaporizing section and a liquefying section.

[0038] The planar shape of the sealed space 4 of the vapor chamber 1 is formed by straight lines or curves, and the curves may be spiral or radial. When it is desired to dissipate heat uniformly in all directions from the heat source, it is preferable to form the sealed space 4 in a spiral or radial shape.

[0039] In FIG. 1A, a recess is formed in a first member 2 constituting a vapor chamber 1, but a recess may also be formed in a second member 3 as in FIG. 1B.

[0040] The working fluid is preferably a liquid with a boiling point of 50°C or higher and 120°C or lower, such as water, methanol, ethanol, isopropanol, or acetone. Water is particularly preferable because it is hygienic and safe. Water refers to pure water such as ion-exchanged water, RO water, or distilled water.

[0041] The metal member for manufacturing a vapor chamber used to manufacture the first member 2, its manufacturing method, and a manufacturing method of a vapor chamber using the metal member for manufacturing a vapor chamber will be described below.

[0042] (Embodiment 1) FIG. 2A shows a cross section of the metal member for manufacturing a vapor chamber according to the first embodiment. The metal member for manufacturing a vapor chamber according to the first embodiment includes a first metal layer 5, an etching protection layer 6 partially formed on one side of the first metal layer 5, and a second metal layer 7 in contact with the first metal layer 5 and the etching protection layer 6 partially formed. The size of the plane of the metal member for manufacturing a vapor chamber must be equal to or larger than the size of the vapor chamber 1. The outer shape may be a rectangle formed by straight lines or may include curves. When multiple vapor chambers 1 are manufactured from one metal member for manufacturing a vapor chamber, the metal member for manufacturing a vapor chamber will be a size appropriate to the number of vapor chambers 1.

[0043] The first metal layer 5 can be made of a metal having a thermal conductivity of 10 W / m2·K or more at the temperature at which the vapor chamber 1 is used. Metals such as copper, copper-molybdenum alloy, and aluminum, which can be easily etched to remove a portion by chemical corrosion, are preferred as metals constituting the first metal layer 5. The thickness of the first metal layer 5 is preferably 9 μm or more and 10,000 μm or less. If it is less than 9 μm, the etching process time is short and difficult to control, and if it exceeds 10,000 μm, the vapor chamber 1 formed becomes thick. Considering processability, a thickness of 50 μm to 500 μm is preferred. The first metal layer 5 can be made of a metal such as copper, copper-molybdenum alloy, and aluminum, and a plate having a thickness of 9 μm or more and 10,000 μm or less can be used. In particular, the first metal layer 5 is preferably made of copper from the viewpoints of processability such as plating and etching and thermal conductivity. Copper is easy to etch and has high thermal conductivity.

[0044] The etching protection layer 6 partially formed on one side of the first metal layer 5 may be of any type as long as it can protect the second metal layer 7 from being etched when the first metal layer 5 is etched. The thickness of the etching protection layer 6 is preferably 0.1 μm or more and 30 μm or less. If it is less than 0.1 μm, pinholes are likely to occur in the etching protection layer 6, and it may be dissolved or peeled off in the etching solution used in the etching process. If it exceeds 30 μm, when the second metal layer 7 is formed by plating, unevenness is generated on the surface of the second metal layer 7 opposite the first metal layer 5, and smoothness cannot be maintained, which deteriorates the adhesion between the vapor chamber 1 and the device to be cooled, thereby reducing the cooling effect.

[0045] Plan views of the partially formed etching protection layer 6 are shown in Fig. 2B and Fig. 2C. Although the shape is not particularly limited, Fig. 2B and Fig. 2C show the case where the metal member for manufacturing a vapor chamber is rectangular. In Fig. 2B, the partially formed etching protection layer 6 is formed like a strip in the long side direction of the rectangle. The spaces between the strips of the etching protection layer 6 become channels through which the liquefied working fluid moves by capillary action when the vapor chamber 1 is formed. Therefore, the interval between the strips becomes the width of the channel through which the liquefied working fluid can move by capillary action. The etching protection layer 6 is provided at a location that constitutes the vaporizing part and the liquefying part of the vapor chamber 1 to be manufactured when this metal member for manufacturing a vapor chamber is used to manufacture the vapor chamber 1. The strips are shown as straight lines, but may be curved lines. Furthermore, the widths of the multiple strip-shaped etching protection layers 6 may differ. Furthermore, the width may increase or decrease in the length direction. In this case, the etching protection layer 6 is provided continuously from one end of the metal member for manufacturing a vapor chamber to the opposite end.

[0046] FIG. 2C shows a case where the etching protection layer 6 is provided in isolation from the end of the metal member for manufacturing the vapor chamber to the end facing the end. As shown in FIG. 2C, when the etching protection layer 6 is circular, the diameter of the circle is preferably 3 μm or more and 300 μm or less. The diameter of the circular etching protection layer 6 may be different. It may be any shape other than circular, such as a square, a rectangle, an ellipse, etc. Also, the size and shape of the isolated etching protection layer 6 may be different. The distance between the centers of the isolated etching protection layers 6 is preferably 3.5 μm or more and 300 μm or less. If the diameter of the circle is less than 3 μm and the distance between the centers is less than 3.5 μm, it is difficult to form the etching protection layer 6. In FIG. 2C, the partially formed etching protection layer 6 is provided in isolation from the end of the metal member for manufacturing the vapor chamber to the end facing the end. When the vapor chamber 1 is formed, the part other than the isolated etching protection layer 6 becomes a flow path through which the liquefied working fluid moves by capillary action. Therefore, the gap other than the area where the etching protection layer 6 is provided is the width of the flow path through which the liquefied working fluid can move by capillary action.

[0047] FIG. 2A shows a cross section of the metal member for manufacturing a vapor chamber according to embodiment 1, a cross section taken along line AA in FIG. 2B, and a cross section taken along line BB in FIG. 2C.

[0048] FIG. 2D shows a case where the etching protection layer 6, which is continuously provided from one end of the metal component for manufacturing a vapor chamber to the opposite end, is not provided with a resist in an isolated manner. The shape of the isolated portion where the resist is not provided may be any shape, such as a square, a rectangle, or an ellipse, and may not be a circle as shown in FIG. 2D. The size of the isolated portion where the resist is not provided may also vary. The area of ​​the isolated portion where the resist is not provided is preferably 1 square micrometer or more and 90,000 square micrometers or less. If the area is less than 1 square micrometer, it is difficult to form a resist, and it is difficult for the etching solution used in the etching process to come into contact with the metal layer 7.

[0049] As shown in Fig. 5, the etching protection layer 6 is formed by applying a photoresist layer 9 to one side of the first metal layer 5, which is a metal plate, irradiating the photoresist layer 9 at a portion of the applied photoresist layer 9 that corresponds to the etching protection layer 6 to be partially formed with UV light, hardening the UV-irradiated photoresist layer 9, and dissolving and removing the unhardened photoresist layer 9 with a developer. When irradiating with UV light, the portions other than the photoresist layer 9 to be hardened are masked and not irradiated with UV light. Instead of applying photoresist, a photosensitive dry film may be attached.

[0050] The photoresist contains a base polymer which is a (meth)acrylate compound, a reactive diluent which is a photopolymerizable monomer, dimer and oligomer, a photopolymerization initiator, a polymerization accelerator, and, if necessary, fillers such as silica, barium sulfate and talc, color pigments, antifoaming leveling agents, polymerization inhibitors, organic solvents, epoxy hardeners, etc. It is preferable that the base polymer is blended in an amount of 60% by weight or less, the reactive diluent is blended in an amount of 5% by weight or more, and the photopolymerization initiator is blended in an amount of 1% by weight or more and 10% by weight or less.

[0051] For example, the base polymer is prepared by adding acrylic acid to the epoxy group of a novolac epoxy resin to synthesize an epoxy acrylate having a photocrosslinkable group, and then reacting the hydroxyl group produced in the first reaction step with an acid anhydride such as tetrahydrophthalic anhydride to obtain an alkaline aqueous solution-soluble resin having a carboxyl group in the side chain. Since the carboxyl group-containing novolac epoxy acrylate remains in the molecule, it becomes the base polymer for a peelable photoresist that dissolves in an alkaline aqueous solution such as caustic soda. Examples of starting resins for the base polymer include novolac, bisphenol, and aliphatic epoxy acrylates, as well as urethane acrylate, polyester acrylate, and acrylic acrylate.

[0052] Reactive diluents are monomers or oligomers that have a (meth)acrylate group in the molecule, which harden and become solid through a photopolymerization reaction caused by UV irradiation, such as urethane acrylate, epoxy acrylate, acrylic acrylate, polyester acrylate, etc. Reactive diluents are used to reduce the viscosity of photoresist to make it easier to apply, and to increase the crosslink density of photoresist after UV irradiation.

[0053] Photopolymerization initiators are reactants that absorb UV light to generate radicals and start polymerization, and include benzophenones, acetophenones, benzoin ethers, and thioxanthones.

[0054] The photoresist is cured by UV irradiation, whereby the terminal acrylate groups of the base polymer and the reactive diluent bond with each other and crosslink. Uncured photoresist is removed by dissolving in a weak alkaline solution such as sodium carbonate. The cured photoresist becomes the partially formed etching protection layer 6.

[0055] The photoresist may contain a color developer that develops color when irradiated with light, a stabilizer that allows long-term storage of the photoresist, a dye that allows the presence of the photoresist to be confirmed, an organic solvent that facilitates application, and the like. In order to increase adhesion between the first metal layer 5 and the second metal layer 7, it is preferable to use a hydrophilic acrylic monomer or hydrophilic methacrylic monomer such as 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, N-vinylpyrrolidone, melamine acrylate, or methacrylates corresponding to these acrylates, as a reactive diluent contained in the photoresist, in an amount of 10 to 90% by weight relative to the amount of the reactive diluent. If the amount is less than 10% by weight, the etching protection layer 6 formed by the photoresist does not adhere sufficiently to the first metal layer 5 and the second metal layer 7, and if the amount exceeds 90% by weight, it dissolves in the etching solution.

[0056] The etching protection layer 6 may be formed by coating with a screen, inkjet or dispenser. Coating with a screen, inkjet or dispenser means coating a screen ink, inkjet ink or ink discharged by a dispenser to a required location to form a partially formed etching protection layer 6. Compared to providing the etching protection layer 6 with a photoresist, no development is required, and the process is simplified. The ink forming the etching protection layer 6 may be any ink as long as it can protect the second metal layer 7 in the etching process. After etching, the etching protection layer 6 formed with the ink is removed. After removing the etching protection layer 6, the surface of the second metal layer 7 is roughened, which makes it easier to form a wick. The etching protection layer 6 may be left in contact with the second metal layer 7.

[0057] If the ink used in screen printing contains a solvent, it will harden when it dries. Heat-curing inks are cured by heating. UV-curing inks are cured by irradiating them with UV light.

[0058] The ink used for inkjet printing is a commercially available inkjet ink, a UV-curable type that is cured by irradiating UV light, or a heat-curable type.

[0059] The above-mentioned photoresist can be used as the screen ink, inkjet ink, or ink discharged by a dispenser as a UV-curable type. There is no need to remove the UV-uncured portion of the ink. For example, when an epoxy resin that reacts with the carboxyl group of the above-mentioned carboxyl group-containing novolac type epoxy acrylate is blended, the carboxyl group reacts with the glycidyl group, improving heat resistance and strengthening the coating, resulting in a permanent resist that is not soluble in an alkaline aqueous solution. A permanent resist may be used as the ink and cured by UV irradiation.

[0060] The screen ink, inkjet ink, or ink discharged by a dispenser for forming the etching protection layer 6 may be a thermoplastic resin or a thermosetting resin. The thermoplastic resin may be polyester, polyurethane, acrylic resin, or the like, and may be dissolved or dispersed in a solvent or water before use. A curing agent may be mixed before application, and the resin may be cured at room temperature or by heating after application to form a thermosetting resin.

[0061] A second metal layer 7 is provided in contact with the first metal layer 5 and the partially formed etching protection layer 6. The second metal layer 7 is made of a metal such as copper, a copper-molybdenum alloy, or aluminum, and preferably has a thickness of 1 μm or more and 200 μm or less. If it is less than 1 μm, the wick formed in the sealed space 4 of the vapor chamber 1 is small, the movement speed of the liquefied working fluid is slow, and the cooling efficiency is poor. If it is 200 μm or more, the work efficiency of the etching process in the manufacturing process of the vapor chamber 1 is poor, and the productivity is significantly reduced. Furthermore, in consideration of processability, a thickness of 2 μm or more and 50 μm or less is preferable.

[0062] The second metal layer 7 is preferably formed by plating. In order to provide the second metal layer 7 by plating, it is preferable to impart electrical conductivity to the etching protection layer 6. In order to impart electrical conductivity to the etching protection layer 6, metal fine powder such as silver, nickel, copper, etc. is added to the etching protection layer 6. In order to form the etching protection layer 6, the metal fine powder is added to the photoresist, screen printing ink, inkjet printing ink, or ink discharged by a dispenser to be used, and the photoresist or ink to which the metal fine powder has been added is applied to one side of the first metal layer 5 to form the etching protection layer 6. The metal fine powder preferably has a particle size of 5.0 μm or less. By making the particle size 5.0 μm or less, it is possible to make the etching protection layer 6 thinner. The metal fine powder is preferably contained in an amount of 1 part by weight or more and 80 parts by weight or less with respect to the amount of components other than the metal fine powder in the etching protection layer 6. If the amount is less than 1 part by weight, when the second metal layer 7 is formed by plating, the formation of the metal on the surface of the etching protection layer 6 becomes insufficient. If the amount exceeds 80 parts by weight, the strength of the etching protection layer 6 decreases, and there is a risk of it being chipped during processing.

[0063] The applied photoresist or ink imparted with conductivity is dried if it contains a solvent, and cured by a process such as UV irradiation or heating to form an etching protection layer 6. Curing by UV irradiation is most suitable in terms of work efficiency. The photoresist for forming the UV-curable etching protection layer 6 imparted with conductivity has the same structure as the above-mentioned photoresist. The photoresist contains a base polymer which is a (meth)acrylate compound, a photopolymerizable monomer, a reactive diluent which is a dimer or oligomer, a photopolymerization initiator, and a polymerization accelerator. If necessary, it contains fillers such as silica, barium sulfate, and talc, a coloring pigment, a defoaming leveling agent, a polymerization inhibitor, an organic solvent, an epoxy curing agent, etc., and contains 60% by weight or less of the base polymer, 5% by weight or more of the reactive diluent, 1% by weight or more and 10% by weight or less of the photopolymerization initiator, and a metal fine powder.

[0064] When the etching protection layer 6 is cured by UV irradiation, the UV reflected by the metal fine powder scatters the photoresist, and the photoresist can be cured by UV irradiation even in the shadow of the metal fine powder. The metal fine powder is preferably contained in the etching protection layer 6 in an amount of 1 part by weight or more and 80 parts by weight or less. If it is less than 1 part by weight, when the second metal layer 7 is formed by plating, the metal is not sufficiently formed on the surface of the etching protection layer 6. If it exceeds 80 parts by weight, the strength of the etching protection layer 6 is reduced and there is a risk of it being chipped during the process. In addition, there is a risk that the photoresist, screen printing ink, inkjet printing ink, or ink applied by dispensing is not sufficiently cured by UV irradiation. Furthermore, in consideration of processability, it is preferable that the metal fine powder is contained in an amount of 5 parts by weight or more and 60 parts by weight or less.

[0065] Carbon may be added to the etching protection layer 6 in order to impart electrical conductivity to the etching protection layer 6. Carbon is made of carbon such as fine carbon powder, carbon fiber, graphite, etc., and has electrical conductivity. The amount of carbon added is preferably 1 part by weight or more and 80 parts by weight or less based on the amount of components other than carbon in the etching protection layer 6. More preferably, the amount is 5 parts by weight or more and 60 parts by weight or less.

[0066] The second metal layer 7 in contact with the first metal layer 5 and the partially formed etching protection layer 6 is provided by plating in the following manner. The plating for providing the metal layer 7 is electroplating. If the etching protection layer 6 is non-conductive, it is necessary to make the surface of the etching protection layer 6 conductive by electroless plating or the like on the etching protection layer 6 before forming the second metal layer 7 by plating. If the etching protection layer 6 is conductive, it is not necessary to make it conductive, and electroplating can be performed directly, which can simplify the process and stabilize the quality. When copper plating is performed as the metal layer 7, a commonly used method can be used. Since the etching protection layer 6 is dissolved or peeled off by an alkaline solution, it is necessary to perform plating in an acid bath, and plating in a copper sulfate bath is preferable.

[0067] In order to manufacture the vapor chamber 1 using the metal member for manufacturing the vapor chamber according to the embodiment 1 shown in Fig. 2A, a first member 2 constituting the vapor chamber 1 is formed. As shown in Fig. 7, an outer frame etching protection layer 10 is formed in an area other than the area forming the sealed space 4 of the first metal layer 5.

[0068] The outer frame etching protective layer 10 is formed by applying a photoresist or attaching a photosensitive dry film to the surface of the first metal layer 5, shielding with a mask all areas except for the areas where the outer frame etching protective layer 10 is to be formed, irradiating with UV light to harden the outer frame etching protective layer 10, and removing the unhardened photoresist or photosensitive dry film by developing.

[0069] After the outer frame etching protection layer 10 is formed, the first metal layer 5 side is etched. As shown in FIG. 8, the first metal layer 5 in the portion where the outer frame etching protection layer 10 is not provided is removed by etching. Also, a portion of the second metal layer 7 where the etching protection layer 6 is not formed is removed by etching. The depth of the second metal layer 7 removed by etching is 0.5 μm or more and 50 μm or less.

[0070] It is possible to etch all of the first metal layer 5 and part of the second metal layer 7 in one etching. In the method for manufacturing a vapor chamber disclosed in Patent Document 6, etching of the first metal layer 5 and etching of part of the second metal layer 7 must be performed twice separately. Each etching is a half-etching, and the setting of the etching conditions is complicated. In the method for manufacturing a vapor chamber using the metal member for manufacturing a vapor chamber according to the present invention, the first member 2 constituting the vapor chamber 1 can be obtained in one etching.

[0071] When the first metal layer 5 and the second metal layer 7 are made of copper, etching is performed with a ferric chloride solution or a cupric chloride solution. The ferric chloride solution used is, but is not limited to, 40 Baume, specific gravity 1.385 (20°C), ferric chloride 520 g / l or more, and 1-2% hydrochloric acid.

[0072] After etching, the outer frame etching protection layer 10 and the etching protection layer 6 are removed to obtain the first member 2 shown in Fig. 9. The recess of the obtained first member 2 is sealed by joining the second member 3 as shown in Fig. 1A, to obtain a vapor chamber 1 having a sealed space 4. The etching protection layer 6 is removed after etching, but if it serves a role such as adding strength by being left, it may be left without being removed.

[0073] As shown in FIG. 8, a part of the second metal layer 7 that is not covered by the etching protection layer 6 is removed by etching. At this time, if the wall surface of the recess formed by removing the first metal layer 5 coincides with the end of the etching protection layer 6, a recess is formed as shown in FIG. 8. However, there is a possibility that the etching protection layer 6 extends to the lower part of the wall surface of the recess. In this case, when the etching protection layer 6 is removed, a gap is formed between the end of the wall surface of the recess on the first metal layer 5 side and the second metal layer 7. Such a gap may reduce the strength of the vapor chamber 1, and is preferably avoided.

[0074] When forming the etching protection layer 6 with ink, in the region of the recess of the first metal layer 5 formed by etching, the etching protection layer 6 made of a permanent resist that is not removed when the hardened photoresist is removed is provided, and in other places, the etching protection layer 6 made of a removable photoresist or resin is provided. After etching, the state after removing the removable etching protection layer 6 is shown in FIG. 15. Although the removable etching protection layer 6 has been removed, the etching protection layer 6 that has not been removed remains between the first metal layer 5 and the second metal layer 7 at the bottom of the wall surface of the recess. A gap is formed between the end of the wall surface of the recess of the first metal layer 5 and the second metal layer 7, and the strength of the vapor chamber 1 is not reduced.

[0075] The etching protection layer 6 is removed by a method suitable for removing the photoresist or ink that forms the etching protection layer 6. In the case of an alkali-strippable or soluble photoresist or ink, a sodium hydroxide or potassium hydroxide solution is used, and in the case of a solvent-strippable photoresist or ink, a polar solvent or a hydrocarbon-based solvent is used. The etching protection layer 6 is removed by dissolving or peeling it off with a solution or solvent that can remove the photoresist or ink.

[0076] After removing the etching protection layer 6, a surface roughening treatment may be performed to create a finer wick. For the surface roughening treatment, a commercially available roughening agent can be used, and the inner surface of the recess shown in FIG. 9 is treated with a roughening agent such as Etchbond CZ from Mec Corporation or Multibond series from MacDermid Performance Solutions Japan Co., Ltd. The surface roughening treatment gives fine irregularities to the inner surface of the recess. The liquid working fluid can move through the concaves of the given irregularities, and can play the role of a wick. The surface roughening treatment also has the effect of increasing the surface area in the sealed space 4 and improving the cooling capacity by forming fine irregularities.

[0077] FIG. 2E shows a case where an etching protection layer 6 is formed over the entire region where a recess is to be formed. When this metal component for manufacturing a vapor chamber is etched, after the first metal layer 5 is removed by etching, the etching protection layer 6 is present over the entire surface, and the second metal layer 7 is not etched. After removing the etching protection layer 6, the surface of the second metal layer 7 that appears over the entire surface is roughened. By roughening the surface of the second metal layer 7, fine irregularities are imparted to the surface of the second metal layer 7. The liquid working fluid can move along the recesses of the imparted fine irregularities, and can act as a wick.

[0078] The first member 2 and the second member 3 can be joined using a reflow device, a laser heating device, or a box oven. Any joining material can be used as long as it has good thermal conductivity and is not destroyed by the internal pressure when the vapor chamber 1 is operated, and examples of such materials include solder and organic adhesives. The solder can be SnAgCu or SnPb, which are commonly used, but low-temperature solder or high-temperature solder can also be used. Examples of soldering methods include manual soldering, metal mask printing using solder paste and heating in a reflow furnace or laser light, and flow soldering. If necessary, the first member 2 and the second member 3 can be fixed in close contact with a jig or robot. The first member 2 and the second member 3 can be joined by any method as long as the vapor chamber 1 is not damaged when the vapor chamber 1 is operated.

[0079] The second member 3 is made of a metal, and a metal having a thermal conductivity of 10 W / m2·K or more at the temperature at which the vapor chamber 1 is used can be used. Examples of such metals include copper, copper-molybdenum alloy, and aluminum. When a metal plate is used as the second member 3, the thickness is preferably 9 μm or more and 10,000 μm or less.

[0080] The second member 3 may be a metal member having a recess formed therein like the first member 2, instead of a metal plate. The second member 3 may be the same as the first member 2.

[0081] The working fluid can be sealed in the sealed space 4 by a general method, similar to heat pipes and other vapor chambers. The working fluid is injected from a fill port while cooling as necessary, the fill port is physically crushed, and then sealed by soldering, brazing, welding, or the like. The fill port may be provided in the first member 2 or the second member 3, or may be formed in both the first member 2 and the second member 3. The vapor chamber 1 is completed by sealing the working fluid.

[0082] Part of the vapor chamber 1 becomes a vaporizer that comes into contact with the device, which is a heating element, and part of it becomes a liquefaction section where the vaporized working fluid liquefies. The liquefied working fluid must return to the vaporizer. The liquefied working fluid returns to the vaporizer by moving through the etched grooves in the second metal layer 7 as a flow path. The grooves are formed with a narrow width, and the working fluid can move by capillary action and quickly return to the vaporizer. The grooves in the second metal layer 7 formed by etching are formed to a width that is wide enough to cause capillary action.

[0083] (Embodiment 2) FIG. 3 shows a metal member for manufacturing a vapor chamber according to the second embodiment. The metal member for manufacturing a vapor chamber according to the second embodiment is provided with an etching stop layer 8 on the surface of the second metal layer 7 of the metal member for manufacturing a vapor chamber according to the first embodiment. The metal constituting the etching stop layer 8 is nickel, aluminum, tin, silver, copper, solder, etc. It is a metal that is not etched by an etching solution that simultaneously etches the first metal layer 5 and the second metal layer 7. The thickness of the etching stop layer 8 is preferably 0.1 μm or more and 200 μm or less, more preferably 0.5 μm or more and 100 μm or less. If it is thinner than 0.1 μm, it does not function as an etching stop layer 8 due to pinholes, etc. Also, if it exceeds 200 μm, the cooling ability is deteriorated.

[0084] The metal member for manufacturing a vapor chamber according to the second embodiment has an etching stop layer 8 provided on the surface of the second metal layer 7 of the metal member for manufacturing a vapor chamber according to the first embodiment, and the first metal layer 5, the etching protection layer 6, and the second metal layer 7 are the same as those in the first embodiment. The manufacturing method of the metal member for manufacturing a vapor chamber is also the same as that in the first embodiment.

[0085] The etching stop layer 8 is formed on the surface of the second metal layer 7 by electroplating. Any material can be used for the etching stop layer 8 as long as it is insoluble in the etching solution used to etch the first metal layer 5 and the second metal layer 7, and examples of such materials include nickel, aluminum, tin, silver, copper, and solder. When the first metal layer 5 and the second metal layer 7 are copper and the etching stop layer 8 is nickel, the etching solution is a ferric hydrochloride or cupric hydrochloride solution.

[0086] The metal member for manufacturing a vapor chamber according to the second embodiment forms an outer frame etching protection layer 10 as shown in FIG. 7, similarly to the metal member for manufacturing a vapor chamber according to the first embodiment. After forming the outer frame etching protection layer 10, etching is performed from the metal layer 5 side. The first metal layer 5 in the portion where the outer frame etching protection layer 10 is not provided is removed by etching. In addition, the second metal layer 7 where the etching protection layer 6 is not formed is removed by etching until it reaches the etching stop layer 8. The state where the outer frame etching protection layer 10 and the etching protection layer 6 have been removed is shown in FIG. 10. The second metal layer 7 is removed until it reaches the etching stop layer 8. The etching solution corrodes all of the first metal layer 5 and the second metal layer 7 not covered by the etching protection layer 6 of the second metal layer 7 until it reaches the etching stop layer 8, and is removed.

[0087] The metal member for manufacturing a vapor chamber from which the outer frame etching protection layer 10 and the etching protection layer 6 have been removed is used as the first member 2, and the recess of the first member 2 is sealed with the second member 3 to manufacture the vapor chamber 1 having the sealed space 4. This method is the same as that of the first embodiment.

[0088] When manufacturing the first member constituting the vapor chamber 1 using the metal member for manufacturing the vapor chamber of the first embodiment, the second metal layer 7 cannot be entirely removed by etching, so the etching solution, etching temperature, and etching time must be adjusted to limit the etching of the second metal layer 7 to a portion. This adjustment is a complicated process. By providing the etching stop layer 8, it becomes possible to entirely remove the second metal layer 7, which makes it easier to adjust the etching conditions and shortens the etching time.

[0089] Since the entire second metal layer 7 is removed down to the etching stop layer 8, the grooves formed by the second metal layer 7 that are not removed by etching are deeper than those in the first embodiment. The depth is the same as the thickness of the second metal layer 7. Grooves that are deeper than those in the first embodiment allow a larger amount of liquefied working fluid to move. The vapor chamber 1 according to the second embodiment is capable of moving the liquefied working fluid from the liquefaction section to the evaporation section more quickly than the vapor chamber 1 according to the first embodiment, and the cooling capacity of the vapor chamber 1 can be improved.

[0090] (Embodiment 3) A metal member for manufacturing a vapor chamber according to embodiment 3 is shown in Fig. 4. The metal member for manufacturing a vapor chamber according to embodiment 3 is provided with a third metal layer 11 on the surface of the etching stop layer 8 of the metal member for manufacturing a vapor chamber according to embodiment 2. The first metal layer 5, the etching protection layer 6, the second metal layer 7 and the etching stop layer 8 are the same as those in embodiment 2. Apart from providing the third metal layer 11, the manufacturing method of the metal member for manufacturing a vapor chamber is the same as that in embodiment 2.

[0091] The third metal layer 11 can be made of a metal having a thermal conductivity of 10 W / m2·K or more at the temperature at which the vapor chamber 1 is used. The third metal layer 11 is made of a metal such as copper, a copper-molybdenum alloy, or aluminum, and has a thickness of 9 μm or more and 10,000 μm or less. The third metal layer 11 is formed on the surface of the etching stop layer 8 by plating. Alternatively, a metal plate may be attached to the surface of the etching stop layer 8 by an adhesive.

[0092] The metal member for manufacturing a vapor chamber according to embodiment 3 is etched in the same manner as in embodiment 2. The first member 2 obtained by etching is shown in FIG. 11. It is the same as embodiment 2 except that a third metal layer 11 is provided on the non-etched side of the etching stop layer 8. The vapor chamber 1 is manufactured in the same manner as embodiment 2.

[0093] Compared to the vapor chamber 1 obtained in embodiment 2, the vapor chamber 1 obtained in embodiment 3 can have an increased strength by providing a third metal layer 11 on the outer surface of the etching stop layer 8.

[0094] 11 shows a state in which the entire first metal layer 5 and the etching stop layer 8 of the second metal layer 7 that is not covered by the etching protection layer 6 have been removed by etching. After this, the etching stop layer 8 that is not covered by the second metal layer 7 may be further removed by etching. FIG. 14 shows a process for removing the etching stop layer 8. The etching of the etching stop layer 8 is performed with an etching solution that does not corrode the first metal layer 5, the second metal layer 7, and the third metal layer 11.

[0095] Removal of the etching stop layer 8 exposes the third metal layer 11. By roughening the exposed surface of the third metal layer 11, fine irregularities are formed on the exposed surface of the third metal layer 11, and a wick can be formed by the fine recesses.

[0096] In the first to third embodiments, when the first member constituting the paper chamber 1 is manufactured, the first member 2 constituting the vapor chamber 1 can be manufactured by multiple-sided bonding from the first metal layer 5, which is a single metal plate, as shown in FIG. 12A. By creating a large-sized metal member for manufacturing the vapor chamber, it becomes possible to manufacture the vapor chamber 1 by multiple-sided bonding. For example, by manufacturing a metal member for manufacturing the vapor chamber that is 5×3 to 100×80 times the size of the vapor chamber 1 by multiple-sided bonding, the manufacturing cost of the vapor chamber 1 can be reduced.

[0097] 12A and 12B, a metal member for manufacturing a vapor chamber is manufactured by using a large-sized metal plate from which the first member 2 can be manufactured by multiple surface attachment as the metal layer 5. In the case of such multiple surface attachment, when manufacturing the vapor chamber 1, a working fluid sealing passage 12 for sealing the working fluid in the sealed space 4 can be provided by etching the surface of the first metal layer 5 when etching the first metal layer 5 and the second metal layer 7. The working fluid sealing passage 12 for sealing the working fluid is provided adjacent to a recess that forms the sealed space 4 as shown in FIG. 12A or 12B.

[0098] 13A and 13B are modified examples of the first member. In FIG. 13A, when the first metal layer 5 is etched to form a recess, the recess is formed in a spiral shape. An outer frame etching protection layer 10 is formed in the black portion of FIG. 13A, and the recess can be formed in a spiral shape by etching. In FIG. 13B, when the metal layer 5 is etched to form a recess, the recess is formed in a radial shape. By forming an outer frame etching protection layer 10 in the black portion of FIG. 13B, the recess can be formed in a radial shape by etching. When it is desired to dissipate heat uniformly in all directions from the device, it is preferable to form the sealed space 4 in a spiral or radial shape. [Explanation of symbols]

[0099] 1: Vapor chamber 2: First member 3: Second member 4: Closed space 5: First metal layer 6: Etching protection layer 7: Second metal layer 8: Etch stop layer 9: Photoresist layer 10: Outer frame etching protection layer 11: Third metal layer 12: Working fluid filling passage

Claims

1. A metal member for manufacturing a vapor chamber is used to form at least a first member when manufacturing a vapor chamber including a first member made of a metal and a second member made of a metal that forms a sealed space in which a working fluid is sealed together with the first member, the metal member comprising: The metal component for manufacturing a vapor chamber is characterized in that, from the side forming the sealed space, it comprises a first metal layer, a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer is used in an amount of 10 to 90% by weight relative to the amount of reactive diluent, a photoresist to which carbon that imparts conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, is added, and an etching protection layer that is partially formed by hardening the photoresist, and a second metal layer that is formed by plating.

2. The metal member for manufacturing a vapor chamber according to claim 1, A metal component for manufacturing a vapor chamber, comprising an etching stop layer on the outside of the second metal layer.

3. The metal member for manufacturing a vapor chamber according to claim 1 or 2, A metal component for manufacturing a vapor chamber, characterized in that the amount of carbon added is 1 part by weight or more and 80 parts by weight or less relative to the amount of components other than carbon in the etching protection layer.

4. The metal member for manufacturing a vapor chamber according to claim 1 or 2, A metal component for manufacturing a vapor chamber, characterized in that the etching protection layer which is partially formed is formed continuously.

5. The metal member for manufacturing a vapor chamber according to claim 1 or 2, A metal component for manufacturing a vapor chamber, characterized in that the etching protection layer formed partially is formed in an isolated manner.

6. A method for manufacturing a metal member for use in manufacturing a vapor chamber, the metal member being used to form at least the first member when manufacturing a vapor chamber including a first member made of a metal and a second member made of a metal that forms, together with the first member, an enclosed space in which a working fluid is sealed, the method comprising: A metal plate is used as a first metal layer, and a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer is used in an amount of 10% by weight to 90% by weight based on the amount of a reactive diluent on the inside of a region that forms the sealed space on one side of the first metal layer, and a photoresist to which carbon that imparts electrical conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, is added is hardened to partially form an etching protection layer; A method for manufacturing a metal member for use in manufacturing a vapor chamber, comprising providing a second metal layer by plating on the surface of the etching protection layer.

7. The method for producing a metal member for producing a vapor chamber according to claim 6, A method for manufacturing a metal member for use in manufacturing a vapor chamber, comprising providing an etching stop layer on the outside of the second metal layer.

8. The method for producing a metal member for producing a vapor chamber according to claim 6, A photoresist is applied to the inside of the region of the first metal layer that forms the sealed space, the photoresist being made by using a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer in an amount of 10% by weight to 90% by weight based on the amount of a reactive diluent, and containing carbon that provides electrical conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite; A method for manufacturing a metal component for vapor chamber manufacturing, comprising: curing the photoresist in a predetermined location and removing the uncured photoresist to form the etching protection layer.

9. The method for producing a metal member for producing a vapor chamber according to claim 6, A method for manufacturing a metal component for manufacturing a vapor chamber, characterized in that ink is applied to a predetermined location inside the area forming the sealed space of the first metal layer by silk screen, inkjet or dispenser, and the ink is hardened to form the etching protection layer.

10. The method for producing a metal member for producing a vapor chamber according to claim 6, A method for manufacturing a metal component for vapor chamber manufacture, comprising imparting electrical conductivity to the etching protection layer, and providing a second metal layer by plating on the first metal layer and the surface of the partially formed etching protection layer.

11. The method for producing a metal member for producing a vapor chamber according to any one of claims 6 to 10, A method for manufacturing a metal member for use in manufacturing a vapor chamber, comprising forming the etching protection layer continuously.

12. The method for manufacturing a metal member for manufacturing a vapor chamber according to any one of claims 6 to 10, A method for manufacturing a metal member for use in manufacturing a vapor chamber, comprising forming the etching protection layer in isolation.

13. A method for manufacturing a vapor chamber including a first member made of a metal and a second member made of a metal that forms a sealed space in which a working fluid is sealed together with the first member, comprising: A metal component for manufacturing a vapor chamber includes, in order from the side forming the sealed space, a first metal layer, an etching protection layer partially formed by hardening a photoresist to which is added a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer in an amount of 10% by weight to 90% by weight based on the amount of a reactive diluent and carbon that imparts electrical conductivity, which is at least one of carbon fine powder, carbon fiber, and graphite, and a second metal layer formed by plating, and an outer frame etching protection layer is formed in the first metal layer except in the region forming the sealed space, Etching the first metal layer side inside the outer frame etching protection layer to remove all of the first metal layer and a part of the second metal layer that is not covered by the partially formed etching protection layer; removing the outer frame etching protection layer and the partially formed etching protection layer; A method for manufacturing a vapor chamber, characterized in that the first member is a member having a recess on one side, and the sealed space is formed by sealing the recess of the first member with the second member.

14. The method for manufacturing a vapor chamber according to claim 13, providing an etching stop layer on the outer side of the second metal layer of the metal member for manufacturing the vapor chamber; A method for manufacturing a vapor chamber, comprising the steps of: removing, by the etching, all of the second metal layer that is not covered by the partially formed etching protection layer.

Images