Joining device and joining method

Abstract

To provide a technique advantageous for highly accurately performing positioning when joining a second object to the predetermined spot of a first object in first and second directions.SOLUTION: A joining device for joining the second object to the first object includes a first holding part which holds the first object, a second holding part which holds the second object, a positioning mechanism which changes a relative position between the first holding part and the second holding part in the first and second directions, a first camera which images the first object, a second camera which images the second object, a support part which supports the second holding part and the first camera, and a control part which controls the positioning mechanism in the first and second directions, so as to position the second object to the joining spot of the first object on the basis of the output of the first camera and the output of the second camera.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a joining apparatus and a joining method. [Background technology]

[0002] Patent Document 1 describes an apparatus for positioning a first object relative to a second object. The apparatus includes a moving body that moves linearly relative to the second object, and a holding unit that holds the first object and a position specifying means that specifies the position of the second object are attached to the moving body at a predetermined interval along the moving direction of the moving body. The apparatus further includes a scale arranged along the moving direction of the moving body. The moving body further includes a first position detection unit that detects the position of the holding unit based on the graduations of the scale, and a second position detection unit that detects the scale position of the scale corresponding to the position of the second object, attached at the predetermined interval along the moving direction of the moving body. The apparatus further includes a control unit that moves the moving body to a position where the first position detection unit detects the scale position, thereby positioning the first object relative to the second object. According to the apparatus, even if the scale expands thermally, the first object can be positioned with high accuracy relative to the second object. However, in the apparatus, the moving direction of the moving body is one direction. Therefore, the apparatus is only able to position the first object relative to the second object with high precision in only the one direction. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6787612 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide an advantageous technique for achieving high accuracy in positioning in a first direction and a second direction when joining a second object to a predetermined location of a first object. [Means for solving the problem]

[0005] One aspect of the present invention relates to a joining device for joining a first object to a second object, the joining device including a first holding part for holding the first object, a second holding part for holding the second object, a positioning mechanism for changing a relative position of the first holding part and the second holding part in a first direction and a second direction, a first camera for imaging the first object, a second camera for imaging the second object, a support part for supporting the second holding part and the first camera, and a control part for controlling the positioning mechanism in the first direction and the second direction based on an output of the first camera and an output of the second camera so that the second object is positioned with respect to a portion of the first object to be joined. Effect of the Invention

[0006] According to the present invention, there is provided an advantageous technique for achieving high accuracy in positioning in a first direction and a second direction when joining a second object to a predetermined location of a first object. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating a configuration of a joining device according to a first embodiment. [Diagram 2] FIG. 2 is a diagram showing an example of the configuration of a wafer stage in the bonding apparatus of the first embodiment. [Diagram 3] 4 is a flowchart showing a bonding method in the bonding apparatus of the first embodiment. [Figure 4] 5 is a flowchart showing a method for calculating an offset of a die bonding position in the bonding apparatus of the first embodiment. [Diagram 5] FIG. 6 is a diagram illustrating a configuration of a joining device according to a second embodiment. [Figure 6] FIG. 13 is a diagram showing an example of the configuration of a wafer stage in a bonding apparatus according to a second embodiment. [Figure 7] FIG. 13 is a diagram illustrating a configuration of a joining device according to a third embodiment. [Figure 8] FIG. 13 is a diagram showing an example of the configuration of a bonding stage in a bonding apparatus according to a third embodiment. [Figure 9] FIG. 13 is a diagram illustrating a configuration of a joining device according to a fourth embodiment. [Figure 10] FIG. 13 is a diagram showing an example of the configuration of a bonding stage in a bonding apparatus according to a fourth embodiment. [Figure 11] FIG. 13 is a diagram illustrating a configuration of a joining device according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0009] In the following description, the first object is a wafer on which semiconductor devices are formed, and the second object is a singulated die containing semiconductor devices; however, the first object and the second object are not limited to these, and various modifications and variations are possible within the scope of the gist of the invention.

[0010] For example, the first object may be a silicon wafer, a silicon wafer on which wiring is formed, a glass wafer, a glass panel on which wiring is formed, an organic panel (PCB) on which wiring is formed, or a metal panel. Alternatively, the first object may be a substrate on which a die on which a semiconductor device is formed is bonded to a wafer on which a semiconductor device is formed.

[0011] For example, the second object may be a stack of several singulated dies, a small piece of material, an optical element, a MEMS, or other structure.

[0012] The bonding method is not limited to a specific one, and may be, for example, bonding using an adhesive, temporary bonding using a temporary adhesive, hybrid bonding, atomic diffusion bonding, vacuum bonding, bump bonding, or the like, and various temporary and permanent bonding methods may be used.

[0013] Here, an industrial application example will be described. As a first application example, there can be mentioned the manufacture of stacked memories. When applied to the manufacture of stacked memories, the first object may be a wafer on which memories are formed, and the second object may be the memory as an individualized die. Since stacking of eight layers or the like is usually performed, in bonding the eighth layer, the first object may be a substrate on which six layers of memories have already been bonded on the wafer. The final layer may be a driver that drives the memory.

[0014] A second application example is heterogeneous integration of processors. Conventionally, processors were mainly SoCs in which logic circuits and SRAMs were built in one semiconductor chip, but in this case, each element is created on a separate wafer by applying an optimal process, and then the elements are bonded together to manufacture a processor. This can reduce the cost of the processor and improve the yield. When applied to heterogeneous integration, the first object may be a wafer on which a logic device, which is a semiconductor device, is formed, and the second object may be an SRAM, antenna, or driver die that has been singulated after probing. Since different dies are usually bonded one after another, the number of bonded objects increases in the first object. For example, when bonding starts with an SRAM, when bonding the next element of the SRAM, the first object is the one on which the SRAM is bonded to the logic wafer. When bonding multiple dies, it is desirable to bond the thinnest dies first so that the bonding head does not interfere with the bonded dies.

[0015] A third application example is 2.5D bonding using a silicon interposer. A silicon interposer is a silicon wafer on which wiring is formed. In 2.5D bonding, a singulated die is bonded using a silicon interposer to electrically bond the dies. When applying to die bonding to a silicon interposer, the first object may be a silicon wafer on which wiring is formed, and the second object may be a singulated die. Since multiple types of dies are usually bonded to a silicon interposer, the first object may include a silicon interposer to which some dies have already been bonded. When bonding multiple dies, it is desirable to bond the dies in the order of thin dies first so that the bonding head does not interfere with the dies already bonded.

[0016] A fourth application example is 2.1D bonding using an organic interposer or a glass interposer. An organic interposer is an organic panel (PCB substrate, CCL substrate) used as a package substrate on which wiring is formed, and a glass interposer is a glass panel on which wiring is formed. In 2.1D bonding, a singulated die is bonded to an organic interposer or a glass interposer, and the dies are electrically bonded to each other by the wiring on the interposer. When applied to die bonding to an organic interposer, the first object may be an organic panel on which wiring is formed, and when applied to die bonding to a glass interposer, the first object may be a glass panel on which wiring is formed, and the second object may be a singulated die. Since multiple types of dies are usually bonded to an organic interposer or a glass interposer, the first object may include an organic interposer or a glass interposer to which several dies have already been bonded. When bonding multiple dies, it is desirable to bond them in the order of thin dies first so that the bonding head does not interfere with the bonded dies.

[0017] A fifth application example is temporary bonding in a fan-out package manufacturing process. A fan-out wafer level package is known in which a singulated die is reconstructed into a wafer shape using a molding resin and packaged. A fan-out panel level package is known in which a singulated die is reconstructed into a panel shape and packaged. When packaging, rewiring from the die to the bumps or rewiring for bonding different types of die is formed on a molded reconstructed substrate. At this time, if the arrangement accuracy of the die is low, when the rewiring pattern is transferred using a step-and-repeat exposure device, the rewiring pattern cannot be aligned to the die with high accuracy. Therefore, it is required to arrange the dies with high arrangement accuracy. When applied to a fan-out package manufacturing process, the first object may be a substrate to be temporarily bonded, such as a metal panel, and the second object may be a singulated die. The singulated die can be temporarily bonded to a substrate, such as a metal panel, by a temporary bonding agent. The wafer is then molded into a wafer or panel shape by a molding device, and after molding, the wafer is peeled off from the substrate such as a metal panel to produce a reconstituted wafer or panel. When applying this bonding method, it is desirable to adjust the bonding position by the bonding device so as to correct the array deformation caused by the molding process.

[0018] A sixth application example is heterogeneous substrate bonding. For example, in the field of infrared image sensors, InGaAs is known as a highly sensitive material. By using InGaAs as the sensor part that receives light and silicon that can realize high-speed processing as the logic circuit that extracts data, a highly sensitive and high-speed infrared image sensor can be manufactured. However, only small-diameter wafers such as 4 inches are mass-produced for InGaAs crystals, which are smaller than the 300 mm that is the mainstream for silicon wafers. For this reason, a method has been proposed in which an individualized InGaAs substrate is bonded onto a 300 mm silicon wafer on which a logic circuit is formed. The bonding device can also be applied to heterogeneous substrate bonding, which bonds substrates made of different materials and with different substrate sizes. When applied to heterogeneous substrate bonding, the first object can be a large-diameter substrate such as a silicon wafer, and the second object can be a small piece of material such as InGaAs. The small piece of material is a sliced ​​crystal, but it is preferable to cut it into a square shape. First Embodiment Fig. 1 is a diagram showing a schematic configuration of a bonding device BD of the first embodiment. In Fig. 1, directions are shown by an XYZ coordinate system. Typically, the XY plane is a plane parallel to a horizontal plane, and the Z axis is an axis parallel to the vertical direction. The X axis, Y axis, and Z axis are shown as examples of mutually orthogonal or intersecting directions. The same applies to other drawings.

[0019] The bonding device BD may include a pickup unit 3 and a bonding unit 4 arranged on a base 1 that is vibration-damped by a mount 2, as shown in FIG. 1. Although FIG. 1 shows an example in which the pickup unit 3 and the bonding unit 4 are mounted on one base 1, the pickup unit 3 and the bonding unit 4 may be individually mounted on different bases. The bonding device BD may be configured to position and bond a die 51 as a second object to a bonding target location on a wafer 6 as a first object. The die 51 may be provided in a state in which it is held by a dicing tape attached to a dicing frame 5. The bonding device BD may also include a control unit CNT that controls the pickup unit 3 and the bonding unit 4. The control unit CNT may be configured by, for example, a PLD (abbreviation of Programmable Logic Device) such as an FPGA (abbreviation of Field Programmable Gate Array), an ASIC (abbreviation of Application Specific Integrated Circuit), a general-purpose or dedicated computer with a program built in, or a combination of all or part of these.

[0020] The pickup unit 3 may include a pickup head 31 and a release head 32. The pickup unit 3 may peel off the die 51 to be bonded to the wafer 6 from the dicing tape by the release head 32, and hold the die 51 by suction with the pickup head 31. The pickup head 31 may, for example, rotate the die 51 180 degrees and deliver it to the bonding head 423 of the bonding unit 4. The pickup head 31 may contact the bonding surface of the die 51. In an application example to a bonding method in which bonding is performed by activating the surface, such as hybrid bonding, it is desirable to reduce the contact area by making the surface that contacts the bonding surface a highly stable surface such as a diamond-like carbon (DLC) coat or a fluorine coat, or by using a shape with a small contact area such as a high-density pin shape. Alternatively, a non-contact handling method such as a Bernoulli chuck or holding the side or edge portion may be used to avoid contact with the bonding surface.

[0021] The bonding unit 4 may include a stage base 41 and an upper base 42. A wafer stage 43 serving as a first holder may be mounted on the stage base 41. The wafer stage 43 may be driven in the X-axis direction (first direction) and the Y-axis direction (second direction) by a driving mechanism 436 such as a linear motor. The driving mechanism 436 may further be configured to drive the wafer stage 43 for rotation about an axis parallel to the Z-axis direction (third direction). Instead of the driving mechanism 436 driving the wafer stage 43 for rotation about an axis parallel to the Z-axis direction, the bonding head 423 may drive the die 51 for rotation about an axis parallel to the Z-axis direction. The driving mechanism 436 may constitute a positioning mechanism that changes the relative position between the wafer chuck 433 (or the wafer 6) serving as the first holder and the bonding head 423 (or the die 51) serving as the second holder.

[0022] A die observation camera 431 serving as a second camera may be mounted on the wafer stage 43. The die observation camera 431 is a second detector for detecting the position of a characteristic portion of the die 51 serving as a second object held by the bonding head 423. A bar mirror 432 may be provided on the wafer stage 43. The bar mirror 432 may be used as a target for the interferometer 422. A wafer chuck 433 serving as a first holding part may be mounted on the wafer stage 43. The wafer chuck 433 holds the wafer 6 serving as the first object.

[0023] In the example of FIG. 1, the wafer stage 43 functions as a support structure that supports the wafer chuck 433 as the first holder and the die observation camera 431 as the second camera. The wafer stage 43 as the support structure may have a first end face (left end face in FIG. 1) on the side of a path for conveying the die 51 as the second object to the bonding head 423 as the second holder, and a second end face (right end face in FIG. 1) on the opposite side of the first end face. The die observation camera 431 as the second camera may be disposed between a virtual plane that passes through the center of the support structure and is parallel to the first end face and the first end face. Alternatively, from another perspective, the die observation camera 431 as the second camera may be disposed between a predetermined position on a path for conveying the die 51 as the second object to the bonding head 423 as the second holder and the wafer chuck 433 as the first holder. Such a configuration is advantageous in that it reduces the amount of movement of the wafer stage 43 in order to observe the die 51 held by the bonding head 423 with the die observation camera 431, thereby improving throughput.

[0024] The upper base 42 may be equipped with a wafer observation camera 421 as a first camera. The wafer observation camera 421 is a first detector for detecting the position of a characteristic part of the wafer 6 as a first object held by the wafer chuck 433. The control unit CNT may be configured to identify or calculate the positions of a plurality of bonding target parts on the wafer 6 based on the positions of the characteristic parts of the wafer 6 detected using the wafer observation camera 421. The upper base 42 may further be equipped with an interferometer 422 for measuring the position of the wafer stage 43 using a bar mirror 432. The upper base 42 may further be equipped with a bonding head 423 that receives and holds a die 51 as a second object delivered from the pickup head 31 and bonds it to a bonding target part of the wafer 6. The bonding head 423 also functions as a second holding unit that holds the die 51 as the second object.

[0025] In the example of FIG. 1, the upper base 42 is a support part, and the support part is configured to support a bonding head 423 as a second holding part and a wafer observation camera 421 as a first camera. The upper base 42 as a support part may have a third end face (left end face in FIG. 1) on the side of a path for conveying a die 51 as a second object to the bonding head 423 as a second holding part, and a fourth end face (right end face in FIG. 1) on the opposite side of the third end face. The wafer observation camera 421 as a first camera may be disposed between a second imaginary plane that passes through the center of the support part and is parallel to the third end face and the third end face. Such a configuration is advantageous for reducing the amount of driving of the wafer stage 43 in order to observe the wafer 6 held by the wafer chuck 433 with the wafer observation camera 421, thereby improving throughput.

[0026] When bonding the die 51 as the second object to a bonding target location of the wafer 6 as the first object, the bonding head 423 may drive the die 51 in the negative direction (downward) of the Z axis to bond the die 51 to the bonding target location of the wafer 6. Alternatively, the drive mechanism 436 may drive the wafer stage 43 in the positive direction (upward) of the Z axis to bond the die 51 to the bonding target location of the wafer 6. Alternatively, the drive mechanism (not shown) may drive the wafer chuck 433 in the positive direction (upward) of the Z axis to bond the die 51 to the bonding target location of the wafer 6.

[0027] Also, in the above description, the pick-up head 31 rotates the die 51 by 180 degrees and passes it to the bonding head 423. However, a first die holding unit and a second die holding unit may be provided, and the die 51 may be passed from the first die holding unit to the second die holding unit midway, and then passed from the second die holding unit to the bonding head 423. Alternatively, a drive mechanism for driving the bonding head 423 may be provided to drive the bonding head 423 so that the bonding head 423 receives the die 51. Also, in order to improve productivity, a plurality of pick-up units, a plurality of pick-up heads, a plurality of release heads, and a plurality of bonding heads may be provided.

[0028] FIG. 2 is a view of the wafer stage 43 as viewed from the positive direction of the Z axis. The wafer 6 is held by a wafer chuck 433. The wafer 6 or the wafer stage 43 can be positioned with respect to rotation around an axis parallel to the X-axis direction (first direction) and the Y-axis direction (second direction) that are orthogonal or intersect with each other, and the Z-axis direction (third direction) that is orthogonal thereto. For this reason, the wafer stage 43 can be provided with a bar mirror 432, more specifically, bar mirrors 432a and 432b. The bar mirror 432a can function as a target for the interferometers 422a and 422c. The control unit CNT can detect the position of the wafer stage 43 in the X-axis direction based on the output of the interferometer 422a, and can also detect the rotation of the wafer stage 43 around an axis parallel to the Z-axis direction based on the output of the interferometers 422a and 422c. The bar mirror 432b can function as a target for the interferometer 422b. The control unit CNT can detect the position of the wafer stage 43 in the Y-axis direction based on the output of the interferometer 422b. The control unit CNT can be configured to feedback control the wafer 6 or the wafer stage 43 with respect to rotations in the X-axis direction, the Y-axis direction, and an axis parallel to the Z-axis direction perpendicular thereto, based on the outputs of the interferometers 422a, 422b, and 422c. The interferometer 422 and the control unit CNT may be understood as components of the above-mentioned positioning mechanism.

[0029] A reference plate 434 may be provided on the upper surface of the wafer stage 43. A plurality of marks 434a, 434b, and 434c may be arranged on the reference plate 434. The reference plate 434 is made of a material with a low thermal expansion coefficient, and the marks may be drawn with high positional accuracy. In one example, the reference plate 434 may be configured by drawing marks on a quartz substrate using a drawing method for a semiconductor lithography process. The reference plate 434 has a surface at approximately the same height as the surface of the wafer 6, and may be observed by a wafer observation camera 421, but a camera for observing the reference plate 434 may be provided separately. The wafer stage 43 may have a configuration in which a coarse movement stage that is driven in a large range and a fine movement stage that is driven in a small range with high accuracy are combined. In such a configuration, the die observation camera 431, the bar mirrors 432a and 432b, the wafer chuck 433, and the reference plate 434 may be provided on the fine movement stage to achieve high-precision positioning.

[0030] Here, a method of guaranteeing the origin position, magnification, X-axis and Y-axis directions (rotation) and orthogonality of the wafer stage 43 using the reference plate 434 will be described. The mark 434a is observed by the wafer observation camera 421, and the output value of the interferometer when the mark 434a is located at the center of the output image of the wafer observation camera 421 is set as the origin of the wafer stage 43. Next, the mark 434b is observed by the wafer observation camera 421, and the Y-axis direction (rotation) and the magnification in the Y-axis direction of the wafer stage 43 are determined based on the output value of the interferometer when the mark 434b is located at the center of the output image of the wafer observation camera 421. Next, the mark 434c is observed by the wafer observation camera 421, and the X-axis direction (rotation) and the magnification in the X-axis direction of the wafer stage 43 are determined based on the output value of the interferometer when the mark 434c is located at the center of the output image of the wafer observation camera 421.

[0031] That is, the direction from the mark 434b to the mark 434a of the reference plate 434 is set as the Y axis of the bonding device BD, and the direction from the mark 434c to the mark 434a is set as the X axis of the bonding device BD, and the direction and the orthogonality of the axis can be calibrated. Also, the distance between the mark 434b and the mark 434a can be set as the scale reference of the Y axis of the bonding device BD, and the distance between the mark 434c and the mark 434a can be set as the scale reference of the X axis of the bonding device BD. Since the refractive index of the optical path of the interferometer changes due to changes in air pressure and temperature, which causes the measurement value to fluctuate, it is desirable to perform calibration at any timing to guarantee the origin position, magnification, rotation, and orthogonality of the wafer stage 43. In order to reduce the fluctuation in the measurement value of the interferometer, it is desirable to cover the space in which the wafer stage 43 is arranged with a temperature-controlled chamber and control the temperature in the temperature-controlled chamber.

[0032] In this embodiment, a form has been described in which the reference plate on the wafer stage is observed with a wafer observation camera, but the origin position, magnification, rotation, and orthogonality of the wafer stage can also be guaranteed if the reference plate is attached to the upper base and observed with a die observation camera.

[0033] The above explanation is about an example of performing calibration by observing a reference plate. Alternatively, for example, calibration may be performed by abutting against a reference surface, or high-precision positioning may be performed using a position measuring instrument with guaranteed absolute values, such as a white light interferometer.

[0034] Hereinafter, the bonding method in the first embodiment will be described with reference to the flowchart of FIG. 3. This bonding method is controlled by the control unit CNT. In step 1001, the wafer 6 as the first object is carried into the bonding device BD and held by the wafer chuck 433 (first holding step). Since adhesion of foreign matter to the bonding surface causes bonding failure, the inside of the bonding device BD may be a space with a high cleanliness level, for example, of about class 1. In order to keep the cleanliness high, the wafer 6 may also be housed in a container with a high degree of airtightness and high cleanliness, such as a FOUP, and carried into the bonding device BD from the container. In addition, in order to increase the cleanliness, the wafer 6 may be cleaned in the bonding device BD after being carried in. Also, a pre-processing for bonding may be performed. For example, in the case of bonding by adhesive, an adhesive is applied to the wafer 6, and in the case of hybrid bonding, a process for activating the surface of the wafer 6 may be performed. The wafer 6 is roughly positioned by a pre-aligner (not shown) based on the notch or orientation flat and the wafer outer shape position, and then transferred to a wafer chuck 433 serving as a first holding portion on the wafer stage 43 and held by the wafer chuck 433.

[0035] In step 1002, the position of the characteristic part (measurement target part) of the wafer 6 is measured using the wafer observation camera 421, and the position of the bonding target part is determined based on the measurement. Here, the positional relationship (relative position) between the position of the characteristic part (measurement target part) of the wafer 6 and the bonding target part is known. Focus adjustment for imaging the characteristic part of the wafer 6 by the wafer observation camera 421 can be provided by providing a focus adjustment mechanism in the wafer observation camera 421. Alternatively, the focus adjustment may be provided by providing a Z-axis drive mechanism in the wafer stage 43 and driving the wafer 6 about the Z axis by the Z-axis drive mechanism. In many cases, an alignment mark for alignment is formed on the wafer 6, but when no alignment mark is formed, a characteristic part whose position can be specified can be measured. The control unit CNT causes the wafer observation camera 421 to image the characteristic part of the wafer 6 (first imaging process), and can detect the relative position of the image of the characteristic part with respect to the center of the output image of the wafer observation camera 421 as the position of the characteristic part (measurement target part).

[0036] An offset amount may be obtained in advance to measure the relative position of the mark with respect to the reference point of the bonding device BD with high accuracy. This may include a process of driving the wafer stage 43 so that the mark on the reference plate 434 comes into the field of view of the wafer observation camera 421, and measuring the position of the mark with the wafer observation camera 421. Based on the driving position of the wafer stage 43 at that time and the position of the mark measured using the wafer observation camera 421, an offset amount with respect to the position measured using the wafer observation camera 421 can be determined. Here, the reference point of the bonding device BD is generally often set to a specific mark position on the reference plate 434, but may be another location as long as it is a reference position.

[0037] Since the measurement range in the rotation direction by the interferometer or the encoder is narrow, the amount of rotation that can be corrected by the wafer stage 43 is small. Therefore, when the amount of rotation of the wafer 6 is large, it is desirable to correct the rotation and hold the wafer 6 again. When holding the wafer 6 again, it is necessary to measure the mounting position of the wafer 6 again. During this operation, the surface position of the bonding surface of the wafer 6 may be measured during the autofocus operation when measuring the marks on the wafer, or by using a first height measuring device (not shown). Since the thickness of the wafer 6 varies, it is advantageous to measure the surface position of the wafer 6 in order to control the gap between the wafer 6 and the die 51 with high precision during the bonding operation.

[0038] The wafer stage 43 uses the reference plate 434 to ensure the origin position, magnification, and the directions (rotations) and orthogonality of the X-axis and Y-axis, so that the positions of the characteristic parts (measurement target parts) of the wafer 6 can be measured based on the origin position of the wafer stage 43 and the X-axis and Y-axis. The wafer 6 can have bonding target parts (or semiconductor devices as bonding targets) at a constant period. These bonding target parts (semiconductor devices) are manufactured by positioning multiple layers with high accuracy in a semiconductor manufacturing device, so that the bonding target parts (semiconductor devices) are generally arranged repeatedly at a period with nano-level accuracy. Therefore, in the wafer alignment in step 1002, it is not necessary to measure the positions of the characteristic parts corresponding to each of all bonding target parts (semiconductor devices). Therefore, the control unit CNT can be configured to measure the positions of measurement target parts that are fewer than the number of bonding target parts, and perform statistical processing of the measurement results to execute a process (first measurement process) of determining the positions of multiple bonding target parts. Such control is advantageous in improving throughput compared to the method of measuring the bonding points for each die bonding as disclosed in Patent Document 1. Here, the multiple measurement target points can be determined based on the arrangement information of the semiconductor device. In order to determine the positions of the multiple bonding target points, the control unit CNT can calculate the origin position of the repeating arrangement of the multiple bonding target points, the rotation amount and orthogonality in the X-axis and Y-axis directions, and the magnification error of the repeating period based on the measurement results of the positions of the multiple measurement target points.

[0039] In addition, it is desirable that the wafer chuck 433 has a temperature control function for adjusting the temperature of the wafer 6. This is because the thermal expansion coefficient of a silicon wafer is 3 ppm / °C, and in the case of a 300 mm diameter wafer, a 1°C rise in temperature will cause the position to move by 150 mm x 0.000003 = 0.00045 mm = 450 nm at the outermost periphery. If the bonding position moves after wafer alignment, bonding cannot be performed with high positional accuracy, so it is desirable to stabilize the wafer temperature with an accuracy of 0.1 degrees or less.

[0040] If the first object is an interposer on which wiring is formed, the multiple bonding locations are determined based on the arrangement of the repeatedly formed wiring, not on the arrangement of the semiconductor devices. Also, if the first object is a wafer or panel without a pattern, the wafer alignment in step 1002 is not performed.

[0041] The movement of the die as the second object, which is performed in parallel with or after the loading of the wafer as the first object and the wafer alignment, will be described below. In step 2001, the dicing frame 5 on which the die 51, which has been singulated by the dicer, is arranged on the dicing tape, is loaded into the bonding device BD. Here, the dicing frame may be transported using a container that is highly airtight and kept highly clean, since adhesion of foreign matter to the bonding surface may cause bonding failure. In addition, the die 51 on the dicing frame 5 may be washed in the bonding device BD to increase the cleanliness. The rotation direction and shift position of the dicing frame 5 may be roughly positioned by a pre-aligner (not shown) based on the external shape of the dicing frame.

[0042] In step 2002, a die 51 as a second object is picked up by the pick-up head 31. Specifically, the pick-up head 31 and the release head 32 may be positioned at the position of the die 51 to be picked up. Then, while the die 51 to be picked up is sucked by the pick-up head 31, the dicing tape is peeled off from the die 51 by the release head 32, and the die 51 may be held by the pick-up head 31. The die 51 to be picked up may be determined based on, for example, known good die (KGD) information transmitted online to the bonding device BD. Usually, only a good die is picked up, but when a bad die (KBD: known bad die) is to be bonded to a defective device portion of the wafer 6, the bad die is picked up.

[0043] In step 2003, the die 51 as the second object picked up by the pick-up head 31 is transported to the bonding head 423 and held by the bonding head 423 (second holding step). When the die 51 is picked up by the pick-up head 31, the semiconductor device surface faces the pick-up head 31. On the other hand, the die 51 is transported to the bonding head 423 so that the surface opposite to the semiconductor device surface faces the bonding head 423. The pickup head 31 may transport the die 51 to the bonding head 423 directly, or via a plurality of die holders. In addition, a pre-processing for bonding may be performed during the transportation of the die 51. The pre-processing may include, for example, a cleaning process of the die, application of an adhesive in the case of bonding by an adhesive, and a process for activating the surface in the case of hybrid bonding. Note that, if the surface activity of the die 51 becomes inactive while the die 51 is transported to the bonding head 423, it is desirable to perform a process for activating the bonding surface using an atmospheric pressure plasma activation device after mounting the die 51 on the bonding head 423.

[0044] Thus, the wafer 6 as the first object and the die 51 as the second object are held by their respective holders. Next, a bonding flow will be described. In step 1003, the position of the die 51 as the second object held by the bonding head 423 can be measured (second measurement step). Specifically, the wafer stage 43 can be driven by the drive mechanism 436 so that a characteristic part of the die 51 is within the field of view of the die observation camera 431. The focus adjustment may be provided by providing a focus adjustment mechanism in the die observation camera 431, or by providing a Z-axis drive mechanism in the bonding head 423 and driving the die 51 about the Z axis by the Z-axis drive mechanism. Alternatively, the focus adjustment may be provided by providing a Z-axis drive mechanism in the wafer stage 43 on which the die observation camera 431 is mounted, and driving the die observation camera 431 about the Z axis by this.

[0045] The scribe line on which the alignment mark used for alignment in the semiconductor manufacturing process is formed can be removed by dicing. Therefore, the die 51 often does not have an alignment mark for alignment. Therefore, the end of the arrangement of pads or bumps arranged on the die 51, an area having a non-periodic arrangement and capable of identifying the position, or the outer shape of the die can be used as a characteristic point to measure the position. The control unit CNT can cause the die observation camera 431 to capture an image of the die 51 (second imaging process) and determine the position of the characteristic point based on the relative position of the image of the characteristic point with respect to the center of the output image of the die observation camera 431. It is necessary to manage the offset amount when positioning the die 51 at the joining point based on the position of the die 51 measured using the die observation camera 431, and the method for doing so will be described later.

[0046] When measuring the position of the die 51, it is desirable to measure the positions of a plurality of characteristic locations in the die 51 and also measure the amount of rotation of the die 51. In order to measure the positions of a plurality of characteristic locations, the wafer stage 43 may be driven each time the position of each characteristic location is measured, or the field of view of the die observation camera 431 may be designed so that a plurality of characteristic locations can be observed at once. The rotation of the die 51 can be performed by rotating the wafer stage 43 during bonding. However, since the measurement range of the interferometer in the rotation direction is narrow, it is desirable to correct the rotation and re-hold the die 51 when the amount of rotation of the die 51 is large. When the die 51 is re-held, it is necessary to measure the position of the die 51 again. During this operation, the surface position of the bonding surface of the die 51 as the second object may be measured during the autofocus operation during the position measurement of the die, or by using a second height measuring device (not shown). Since the thickness of the die 51 varies, it is advantageous to measure the surface position of the die 51 in order to control the gap between the wafer 6 and the die 51 with high precision during the bonding operation. In addition, the heights of a plurality of positions on the die 51 may be measured, and the attitude of the die 51 or the wafer 6 during bonding may be adjusted by a tilt mechanism (not shown). Such a tilt mechanism may be incorporated in the wafer stage 43, the wafer chuck 433, or the bonding head 423.

[0047] In step 1004, the driving mechanism 436 drives the wafer stage 43 so that the die 51 as the second object is positioned at a bonding target location selected from a plurality of bonding target locations of the wafer 6 as the first object. At this time, the control unit CNT can control the driving mechanism 436 so that the position of the wafer stage 43 is feedback-controlled based on the measurement result by the interferometer 422. Also, at this time, the control unit CNT can determine the target position of the wafer stage 43 based on the position and rotation amount of the wafer 6 and the position and rotation amount of the die 51 measured in steps 1002 and 1003, and further the offset amount. Also, when a shift occurs due to the bonding operation as described later, the control unit CNT also takes that amount into account as the offset amount.

[0048] In step 1005, the die 51 as the second object is bonded to the selected bonding target location of the wafer 6 as the first object (bonding step). As an operation for bonding, the bonding head 423 may be raised and lowered, or the wafer stage 43 or the wafer chuck 433 may be raised and lowered. In order to prevent a decrease in positioning accuracy during the raising and lowering, a highly reproducible lifting and lowering drive system may be adopted, or the lifting and lowering may be performed while continuing feedback control. In order to perform the lifting and lowering while continuing feedback control, when the wafer stage 43 is raised and lowered, the width of the bar mirror in the Z-axis direction may be designed so that the bar mirror does not deviate from the optical path of the interferometer even during the raising and lowering. On the other hand, when the bonding head 423 or the wafer chuck 433 is raised and lowered, feedback control may be performed while monitoring the positional deviation of the bonding head 423 or the wafer chuck 433 in the X-axis and Y-axis directions with an encoder or a gap sensor. In addition, in order to control the gap between the first object and the second object with high precision, a linear encoder may be provided to measure the Z-axis position of the lifting and lowering drive mechanism. In addition, when the first object and the second object come into contact with each other, the wafer stage that is feedback-controlled using an interferometer is constrained, so the control method may be different before and after the contact, such as stopping the feedback control. Up to this point, the description has been given up to the point where the die 51 is brought into contact with the bonding target portion of the wafer 6, but in the case of bump bonding, a step required for bonding, such as pressing the die 51 against the wafer 6 with a predetermined pressure, and a step of observing the bonding state after bonding, may be added.

[0049] When the bonding of one die 51 to the wafer 6 is completed, in step 1006, the control unit CNT judges whether the die 51 as the second object has been bonded to all of the multiple bonding target locations of the wafer 6 as the first object. Usually, several tens to several hundreds of semiconductor devices are arranged on one wafer 6, and the die 51 is bonded to each of them, so that the bonding of the die 51 is repeated multiple times. If the bonding of the die 51 to all of the multiple bonding target locations of the wafer 6 is not completed, the process returns to the die pick-up in step 2002. Note that, in the example of FIG. 3, the above judgment is made after the bonding operation in step 1005, and the die 51 is picked up in step 2002. However, the die pick-up in step 2002 may be performed in parallel between the die alignment in step 1003 and the bonding operation in step 1005. In addition, when multiple types of die are bonded to one semiconductor device, the bonding of the next type of die may be started after the bonding of one type of die is completed for all semiconductor devices in one wafer 6. In this case, the next type of die is picked up in the die pickup in step 2002. At this time, necessary steps such as the operation of carrying in the dicing frame on which the next type of die is mounted are performed.

[0050] When bonding of the die 51 to all of the multiple bonding target locations of the wafer 6 is completed, the wafer 6 is unloaded from the bonding device BD in step 1007. The wafer 6 may be returned to the FOUP into which it was loaded, or may be returned to another container. However, in general, the wafer 6 is returned to another container because the thickness of the wafer changes due to bonding and the gap between the wafers needs to be wider than that of the wafers before bonding.

[0051] The flow for bonding multiple second objects to one first object has been explained above, but this operation is repeated for the required number of first objects. Note that since the number of dies on the dicing frame and the number of semiconductor devices on the wafer to which the dies are bonded are generally different, the loading of the wafer and the loading of the dicing frame are not synchronized. If there are no more dies on the dicing frame while bonding dies to one wafer, the next dicing frame is loaded. Also, if there are still dies remaining on the dicing frame after bonding of dies to all the semiconductor devices on one wafer has been completed, those dies are used for bonding to the next wafer.

[0052] Next, a method for managing an offset amount reflected in the bonding position drive in step 1004 with respect to the position of the die 51 measured using the die observation camera 431 will be described with reference to the flowchart of Fig. 4. The process shown in the flowchart of Fig. 4 is controlled by the control unit CNT.

[0053] In step 3001, the wafer 6 as a first object is carried into the bonding apparatus SB and held by the wafer chuck 433. The wafer 6 has an alignment mark used for aligning the wafer 6 and a mark for measuring a bonding deviation described later. The wafer 6 can be prepared so that the die 51 does not become misaligned after mounting the die 51, for example, by disposing a temporary adhesive on the portion to be bonded. The wafer 6 is roughly positioned by a pre-aligner (not shown) based on the notch or orientation flat and the wafer outer shape position, and is carried to the wafer chuck 433 as a first holding unit on the wafer stage 43 and held by the wafer chuck 433.

[0054] In step 3002, the position of the alignment mark on the wafer 6 is measured using the wafer observation camera 421, and the mounting position and rotation amount of the wafer 6 are calculated based on the result. During this operation, the surface position of the bonding surface of the wafer 6 may be measured using a first height measuring device (not shown). Since the thickness of the wafer 6 varies, it is advantageous to measure the surface position of the wafer 6 in order to control the gap between the wafer 6 and the die 51 with high accuracy during the bonding operation.

[0055] In step 3003, a glass die with an alignment mark is held by a bonding head 423. The reason why a glass die is used is to check for bonding misalignment using a wafer observation camera 421 after bonding. Therefore, the die may be made of a material that transmits light of a wavelength detected by the wafer observation camera 421. For example, when observing using infrared light, a silicon die may be used. An alignment mark for measuring the position of the die and a mark for measuring bonding misalignment are formed on the die.

[0056] In step 3004, the position and rotation amount of the glass die with alignment marks held by the bonding head 423 are measured. Also, during this operation, the surface position of the bonding surface of the glass die with alignment marks may be measured using a second height measuring device (not shown). Since the thickness of the glass die with alignment marks varies, it is advantageous to measure the surface position of the glass die with alignment marks in order to control the gap between the wafer 6 and the die 51 with high precision during the bonding operation. Also, the heights of a plurality of positions on the glass die with alignment marks may be measured, and the attitude of the die 51 or the wafer 6 during bonding may be adjusted by a tilt mechanism (not shown). Such a tilt mechanism may be incorporated in the wafer stage 43, the wafer chuck 433, or the bonding head 423.

[0057] In step 3005, the driving mechanism 436 drives the wafer stage 43 so that the glass die with the alignment mark is positioned at a bonding target location selected from a plurality of bonding target locations on the wafer 6. At this time, the control unit CNT can control the driving mechanism 436 so that the position of the wafer stage 43 is fed back based on the measurement result by the interferometer 422. Also, at this time, the control unit CNT can determine a target position of the wafer stage 43 based on the position and rotation amount of the wafer 6 measured in steps 3002 and 3004, and the position, rotation amount, and offset amount of the glass die with the alignment mark.

[0058] In step 3006 , similar to step 1005 , a glass die with an alignment mark is bonded to the selected bonding target location of the wafer 6 .

[0059] In step 3007, the bonding position is measured. Specifically, the wafer stage 43 is driven by the driving mechanism 436 so that the mark for measuring the bonding deviation is within the field of view of the wafer observation camera 421, and the bonding deviation between the wafer 6 and the glass die is measured using the wafer observation camera 421. Examples of the mark for measuring the bonding deviation include a 30 um wide rectangular frame on the wafer side and a 60 um wide rectangular frame on the glass die side. The two frames are bonded so as to overlap, and the bonding deviation can be calculated from the deviation between the two frames. The mark for measuring the bonding deviation may be a circle instead of a square, the mark on the wafer side may be an outer mark and the mark on the die side may be an inner mark, or two different marks may be measured and the deviation may be detected from the distance between them. In order to determine the bonding deviation, the deviation may be measured for marks at multiple locations in the glass die. By measuring the marks at multiple locations in the glass die, the rotation error of the bonding can also be measured, and the measurement error can be reduced by statistical processing, making it possible to measure the bonding deviation with high accuracy.

[0060] In step 3008, the control unit CNT calculates an offset amount based on the positional deviation measured using the die observation camera 431. The calculated offset amount may include, for example, the shift amount in the X-axis direction and the Y-axis direction, and the rotation amount around the Z-axis direction. Here, a glass die may be bonded to each of the multiple bonding target locations of the wafer 6, and the offset amount may be calculated for each of the multiple bonding target locations. Alternatively, a glass die may be bonded to each of the multiple bonding target locations of the wafer 6, and the final offset amount may be calculated by averaging the offset amounts calculated for each of the multiple bonding target locations.

[0061] An example of positioning when bonding a die to a wafer will be described below using the measurement results of the positions of the wafer and the die, and a predetermined offset amount. Note that although the signs are inverted depending on how the coordinate direction is taken, the coordinate system shown in the figure will be used in the following example. The position of the wafer 6 measured in step 1002 (the position relative to the reference point of the bonding device BD) is (Wx, Wy), and the rotation amount is Wθ. Also, the position of the die 51 relative to the center of the image captured in step 1003 is (Dx, Dy), and the rotation amount is Dθ. Also, the shift amount generated during bonding is (Px, Py), and the rotation amount is Pθ. Also, the offset amount obtained in step 3008 is (X0, Y0), and θ0.

[0062] When the offset amount in step 3008 is correctly calculated, Wx = Wy = Wθ = Dx = Dy = Dθ = 0. When the same process as in step 3008 is used, bonding can be performed with high accuracy by sending the wafer stage 43 to (X0, Y0) and θ0 for bonding.

[0063] If the position of the wafer 6 deviates from the reference of the wafer stage 43, for example, if it deviates in the positive direction, it can be corrected by moving the wafer stage 43 in the negative direction by that amount. Therefore, during bonding, it is sufficient to drive the wafer stage 43 to (X0-Wx, Y0-Wy), θ0-Wθ.

[0064] On the other hand, if the position of the die 51 deviates from the reference of the bonding head 423, for example, if it deviates in the positive direction, it can be corrected by moving the wafer stage 43 in the positive direction by that amount. Therefore, in order to adjust the bonding position, the wafer stage 43 should be driven to (X0-Wx+Dx, Y0-Wy+Dy), θ0-Wθ+Dθ during bonding.

[0065] Furthermore, in order to offset the amount of shift that occurs during bonding, the bonding position is set by shifting the wafer stage 43 by the same amount when the wafer is shifted in the positive direction. Therefore, during bonding, the wafer stage 43 is driven to (X0-Wx+Dx+Px, Y0-Wy+Dy+Py), θ0-Wθ+Dθ+Pθ. <Second embodiment> The second embodiment will be described below, but matters not mentioned in the second embodiment may follow the first embodiment. Fig. 5 is a diagram showing a schematic configuration of a bonding apparatus BD of the second embodiment. In the bonding apparatus BD of the second embodiment, the position of the wafer stage 43 is measured using an encoder.

[0066] Specifically, instead of the interferometer 422 and bar mirror 432 in the bonding apparatus BD of the first embodiment, an encoder scale 424 and an encoder head 435 are employed in the bonding apparatus BD of the second embodiment. The encoder head 435 is a two-dimensional encoder head mounted on the wafer stage 43. The encoder scale 424 is a two-dimensional encoder scale mounted on the upper base 42. The encoder scale 424 has a two-dimensional scale so that the position of the wafer stage 43 can be measured within the movable range of the wafer stage 43. The encoder head 435 measures the position of the wafer stage 43 in the X-axis direction and the Y-axis direction.

[0067] The encoder scale 424 is made of a material with a low thermal expansion coefficient, and the scale can be drawn with high positional accuracy. In one example, the encoder scale 424 can be configured by drawing a scale on a quartz substrate using a drawing method for a semiconductor lithography process. The wafer stage 43 can have a configuration in which a fine movement stage driven with high accuracy in a small range is mounted on a coarse movement stage driven in a large range. In such a configuration, the encoder head 435 can be provided on the fine movement stage in order to perform high-precision positioning. The control unit CNT can be configured to feedback control the wafer 6 or the wafer stage 43 with respect to rotations around axes parallel to the X-axis direction, the Y-axis direction, and the Z-axis direction perpendicular thereto, based on the output of the encoder head 435. The driving mechanism 436 can constitute a positioning mechanism that changes the relative position between the wafer stage 43 (or the wafer 6) as the first holding unit and the bonding head 423 (or the die 51) as the second holding unit. Moreover, the encoder head 435 and the control unit CNT may be understood as components of the positioning mechanism.

[0068] FIG. 6 is a view of the wafer stage 43 as viewed from the positive direction of the Z axis. A method of guaranteeing the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the wafer stage 43 using the reference plate 434 will be described with reference to FIG. 6. The mark 434a is observed by the wafer observation camera 421, and the output value of the encoder head 435 when the mark 434a is located at the center of the output image of the wafer observation camera 421 is set as the origin of the wafer stage 43. Next, the mark 434b is observed by the wafer observation camera 421, and the Y-axis direction (rotation) and the magnification in the Y-axis direction of the wafer stage 43 are determined based on the output value of the encoder head 435 when the mark 434b is located at the center of the output image of the wafer observation camera 421. Next, the mark 434c is observed by the wafer observation camera 421, and the direction (rotation) of the X-axis of the wafer stage 43 and the magnification in the X-axis direction are determined based on the output value of the encoder head 435 when the mark 434c is located at the center of the output image of the wafer observation camera 421. That is, the direction of the axis and the orthogonality can be calibrated by setting the direction from the mark 434b to the mark 434a of the reference plate 434 as the Y-axis of the bonding device BD and the direction from the mark 434c to the mark 434a as the X-axis of the bonding device BD. Calibration can also be performed by setting the interval between the mark 434b and the mark 434a as the scale reference of the Y-axis of the bonding device BD and the interval between the mark 434c and the mark 434a as the scale reference of the X-axis of the bonding device BD. The encoder scale 424 expands due to heat, which causes the measurement value by the encoder head 435 to fluctuate. Therefore, it is desirable to perform calibration at any timing to guarantee the origin position, magnification, rotation, and orthogonality of the wafer stage 43. Instead of using a two-dimensional encoder, a linear encoder may be used for each of the X-axis and Y-axis.

[0069] Instead of the above configuration, multiple encoder heads may be arranged and switched between depending on the positions of the parts to be joined, which is advantageous for reducing the footprint. Alternatively, a pair of encoder heads may be arranged symmetrically with respect to the parts to be joined, which is advantageous for improving the position measurement accuracy.

[0070] The above explanation is about an example of performing calibration by observing a reference plate. Alternatively, for example, calibration may be performed by abutting against a reference surface, or a calibration mechanism may be provided inside the encoder to make it a position measuring instrument with guaranteed absolute values. <Third embodiment> The third embodiment will be described below, but matters not mentioned as the third embodiment may follow the first embodiment. Fig. 7 is a diagram showing a schematic configuration of a bonding apparatus BD of the third embodiment. In the bonding apparatus BD of the third embodiment, the relative position between the wafer 6 as the first object and the die 51 as the second object is changed or adjusted by positioning the bonding head 453.

[0071] The bonding unit 4 may include an upper base 42 and a lower base 44. The bonding stage 45 may be supported by the upper base 42. The bonding stage 45 may be driven in the X-axis direction (first direction) and the Y-axis direction (second direction) by a driving mechanism 437 such as a linear motor. The driving mechanism 437 may be configured to further drive the bonding stage 45 for rotation about an axis parallel to the Z-axis direction (third direction). Instead of the driving mechanism 437 driving the bonding stage 45 for rotation about an axis parallel to the Z-axis direction, the driving mechanism 437 may drive the wafer chuck 443 for rotation about an axis parallel to the Z-axis direction. The driving mechanism 437 may constitute a positioning mechanism that changes the relative position between the wafer chuck 433 (or the wafer 6) as the first holding unit and the bonding head 453 (or the die 51) as the second holding unit.

[0072] The bonding stage 45 may be equipped with a wafer observation camera 451 as a first camera. The wafer observation camera 451 is a first detector for detecting the position of a characteristic portion of the wafer 6 as a first object held by the wafer chuck 433. The bonding stage 45 may further be equipped with a bonding head 453 as a second holder that receives and holds a die 51 as a second object delivered from the pickup head 31 and bonds the die 51 to a bonding target portion of the wafer 6. In the example of FIG. 7, the bonding stage 45 may constitute a support portion that supports the bonding head 453 as the second holder and the wafer observation camera 451 as the first camera. The bonding stage 45 may be provided with a bar mirror 452. The bar mirror 452 may be used as a target of the interferometer 442.

[0073] A die observation camera 441 serving as a second camera may be mounted on the lower base 44. The die observation camera 441 is a second detector for detecting the position of a characteristic portion of a die 51 serving as a second object held by the bonding head 453. A wafer chuck 433 serving as a first holder may be mounted on the lower base 44. The wafer chuck 433 holds a wafer 6 serving as a first object. An interferometer 442 for measuring the position of the bonding stage 45 using a bar mirror 452 may also be mounted on the lower base 44. In the example of FIG. 7, the lower base 44 functions as a support structure for supporting the wafer chuck 433 serving as the first holder and the die observation camera 441 serving as the second camera.

[0074] When bonding the die 51 as the second object to a bonding target location of the wafer 6 as the first object, the bonding head 453 may drive the die 51 in the negative direction (downward) of the Z axis to bond the die 51 to the bonding target location of the wafer 6. Alternatively, the drive mechanism 437 may drive the bonding stage 45 in the negative direction (downward) of the Z axis to bond the die 51 to the bonding target location of the wafer 6. Alternatively, the drive mechanism (not shown) may drive the wafer chuck 433 in the positive direction (upward) of the Z axis to bond the die 51 to the bonding target location of the wafer 6.

[0075] FIG. 8 is a view of the bonding stage 45 as viewed from the negative direction of the Z axis. The bonding head 453 holds the die 51. The die 51 can be positioned with respect to rotation around an axis parallel to the X-axis direction (first direction) and the Y-axis direction (second direction) that are orthogonal or intersect with each other, and the Z-axis direction (third direction) that is orthogonal thereto. For this reason, the bonding stage 45 can be provided with a bar mirror 452, more specifically, bar mirrors 452a and 452b. The bar mirror 452a can function as a target for the interferometers 422a and 422c. The control unit CNT can detect the position of the bonding stage 45 in the X-axis direction based on the output of the interferometer 422a, and can detect the rotation of the bonding stage 45 around an axis parallel to the Z-axis direction based on the output of the interferometers 422a and 422c. The bar mirror 452b can function as a target for the interferometer 422b. The control unit CNT can detect the position of the bonding stage 45 in the Y-axis direction based on the output of the interferometer 422b. The control unit CNT can be configured to feedback-control the die 51 or the bonding stage 45 with respect to rotations about axes parallel to the X-axis direction, the Y-axis direction, and the Z-axis direction perpendicular thereto, based on the outputs of the interferometers 422a, 422b, and 422c. The interferometer 422 and the control unit CNT may be understood as components of the positioning mechanism described above.

[0076] A reference plate 454 is provided on the lower surface of the bonding stage 45. A plurality of marks 454a, 454b, and 454c are arranged on the reference plate 454. The reference plate 454 is made of a material with a low thermal expansion coefficient, and the marks can be drawn with high positional accuracy. In one example, the reference plate 454 can be configured by drawing marks on a quartz substrate using a drawing method for a semiconductor lithography process. The reference plate 454 has a surface at approximately the same height as the surface of the die 51 and can be observed by the die observation camera 441, but a camera for observing the die observation camera 441 may be provided separately. The bonding stage 45 can have a configuration in which a coarse movement stage that is driven in a large range and a fine movement stage that is driven in a small range with high accuracy are combined. In such a configuration, the wafer observation camera 451, the bar mirrors 452a and 452b, the bonding head 453, and the reference plate 454 can be provided on the fine movement stage to achieve high-precision positioning.

[0077] Here, a method of guaranteeing the origin position, magnification, X-axis and Y-axis directions (rotation) and orthogonality of the bonding stage 45 using the reference plate 454 will be described. The mark 454a is observed by the die observation camera 441, and the output value of the interferometer when the mark 454a is located at the center of the output image of the die observation camera 441 is set as the origin of the bonding stage 45. Next, the mark 454b is observed by the die observation camera 441, and the Y-axis direction (rotation) and the Y-axis magnification of the bonding stage 45 are determined based on the output value of the interferometer when the mark 454b is located at the center of the output image of the die observation camera 441. Next, the mark 454c is observed by the die observation camera 441, and the X-axis direction (rotation) and the X-axis magnification of the bonding stage 45 are determined based on the output value of the interferometer when the mark 454c is located at the center of the output image of the die observation camera 441.

[0078] That is, the direction from the mark 454b to the mark 454a of the reference plate 454 is set as the Y axis of the bonding device BD, and the direction from the mark 454c to the mark 454a is set as the X axis of the bonding device BD, and the direction and the orthogonality of the axis can be calibrated. In addition, the distance between the mark 454b and the mark 454a can be set as the scale reference of the Y axis of the bonding device BD, and the distance between the mark 454c and the mark 454a can be set as the scale reference of the X axis of the bonding device BD. Since the refractive index of the optical path of the interferometer changes due to changes in air pressure and temperature, which causes the measurement value to fluctuate, it is desirable to perform calibration at any timing to guarantee the origin position, magnification, rotation, and orthogonality of the bonding stage 45. In order to reduce the fluctuation of the measurement value of the interferometer, it is desirable to cover the space in which the bonding stage 45 is arranged with a temperature-controlled chamber and control the temperature in the temperature-controlled chamber.

[0079] In this embodiment, the embodiment has been described in which the reference plate on the bonding stage is observed by the die observation camera. Alternatively, the reference plate may be attached to the lower base and observed by the wafer observation camera, so that the origin position, magnification, rotation, and orthogonality of the bonding stage can be guaranteed.

[0080] The above explanation is about an example of performing calibration by observing a reference plate. Alternatively, for example, calibration may be performed by abutting against a reference surface, or high-precision positioning may be performed using a position measuring instrument with guaranteed absolute values, such as a white light interferometer.

[0081] In the third embodiment, since the position where the bonding is performed and the point where the interferometer is measuring are separated, it is desirable to correct the Abbe error. Also, the error may be reduced by performing measurements on both sides of the bonding stage.

[0082] Hereinafter, the bonding flow of the third embodiment will be described with reference to the flowchart in Fig. 3. This bonding flow is controlled by the control unit CNT. In step 1001, a wafer 6 as a first object is carried into the bonding device BD and held by the wafer chuck 433. The wafer 6 is roughly positioned by a pre-aligner (not shown) based on the notch or orientation flat and the wafer outer shape position, and is carried to the wafer chuck 443 as a first holder on the lower base 44 and held by the wafer chuck 433.

[0083] In step 1002, the mounting position of the wafer 6 is measured using the wafer observation camera 451. The focus adjustment may be provided by providing a focus adjustment mechanism in the wafer observation camera 451, or by providing a Z-axis drive mechanism in the wafer chuck 443 and driving the wafer 6 about the Z axis by the Z-axis drive mechanism. Alternatively, the focus adjustment may be provided by providing a Z-axis drive mechanism in the bonding stage 45 and driving the wafer observation camera 451 about the Z axis by the Z-axis drive mechanism. In many cases, an alignment mark for alignment is formed on the wafer 6, but when no alignment mark is formed, a characteristic part whose position can be specified can be measured. The control unit CNT can detect the relative position of the image of the characteristic part with respect to the center of the output image of the wafer observation camera 451 as the position of the characteristic part.

[0084] An offset amount may be obtained in advance to measure the relative position of the mark with respect to the reference point of the bonding device BD with high accuracy. This may include a process of driving the bonding stage 45 so that the mark on the reference plate 454 comes into the field of view of the wafer observation camera 451, and measuring the position of the mark with the wafer observation camera 451. It is possible to determine the drive position of the bonding stage 45 at that time and the offset amount relative to the position measured using the wafer observation camera 451. Here, the reference point of the bonding device BD is generally often set to a specific mark position on the reference plate 454, but may be another location as long as it is a reference position.

[0085] Since the measurement range in the rotation direction by the interferometer is narrow, the amount of rotation that can be corrected by the bonding stage 45 is small. Therefore, if the amount of rotation of the wafer 6 is large, it is desirable to correct the rotation and re-hold the wafer 6. When the wafer 6 is re-held, it is necessary to measure the mounting position of the wafer 6 again. During this operation, the surface position of the bonding surface of the wafer 6 may be measured using a first height measuring device (not shown). Since the thickness of the wafer 6 varies, it is advantageous to measure the surface position of the wafer 6 in order to control the gap between the wafer 6 and the die 51 with high precision during the bonding operation.

[0086] The origin position, magnification, and directions (rotation) and orthogonality of the X-axis and Y-axis of the bonding stage 45 are guaranteed using the reference plate 454, so the position of the mounted wafer 6 is measured based on the origin position of the bonding stage 45 and the X-axis and Y-axis.

[0087] The movement of the die as the second object, which is performed in parallel with or after the loading of the wafer as the first object and the wafer alignment, will be described below. In step 2001, a dicing frame 5 on which the dies 51, which have been singulated by a dicer, are arranged on a dicing tape, is loaded into the bonding device BD. In step 2002, the die 51 as the second object is picked up by the pick-up head 31.

[0088] In step 2003, the die 51 as the second object picked up by the pick-up head 31 is transported to the bonding head 453. When the die 51 is picked up by the pick-up head 31, the semiconductor device surface faces the pick-up head 31. On the other hand, the die 51 is transported to the bonding head 453 so that the surface opposite to the semiconductor device surface faces the bonding head 453. The pickup head 31 may transport the die 51 to the bonding head 453 directly, or may transport the die 51 to the bonding head 453 via a plurality of die holders. In addition, pre-processing for bonding may be performed during the transportation of the die 51. The pre-processing may include, for example, a cleaning process of the die, application of an adhesive in the case of bonding by adhesive, and a process for activating the surface in the case of hybrid bonding. Note that if the surface activity of the die 51 becomes inactive while the die 51 is transported to the bonding head 453, it is desirable to perform a process for activating the bonding surface using an atmospheric pressure plasma activation device after mounting the die 51 on the bonding head 453. Thus, the wafer 6 as the first object and the die 51 as the second object are held by their respective holders. Next, a bonding flow will be described. In step 1003, the position of the die 51 as the second object held by the bonding head 453 can be measured. Specifically, the bonding stage 45 can be driven by the drive mechanism 437 so that a characteristic portion of the die 51 is within the field of view of the die observation camera 441. The focus adjustment can be provided by providing a focus adjustment mechanism in the die observation camera 441, or by providing a Z-axis drive mechanism in the bonding head 453 and driving the die 51 about the Z axis by the Z-axis drive mechanism.

[0089] The scribe line on which the alignment mark used for alignment in the semiconductor manufacturing process is formed can be removed by dicing. Therefore, the die 51 often does not have an alignment mark for alignment. Therefore, the end of the array of pads or bumps arranged on the die 51, an area having a non-periodic array and capable of identifying the position, or the outer shape of the die can be used as a characteristic point and the position can be measured. The control unit CNT can determine the position of the characteristic point based on the relative position of the image of the characteristic point with respect to the center of the output image of the die observation camera 441. It is necessary to manage the offset amount when positioning the die 51 at the joining point based on the position of the die 51 measured using the die observation camera 441, and the method for doing so will be described later.

[0090] When measuring the position of the die 51, it is desirable to measure the positions of a plurality of characteristic locations in the die 51 and also measure the amount of rotation of the die 51. In order to measure the positions of a plurality of characteristic locations, the bonding stage 45 may be driven each time the position of each characteristic location is measured, or the field of view of the die observation camera 441 may be designed so that a plurality of characteristic locations can be observed at once. The rotation of the die 51 can be performed by rotating the bonding stage 45 during bonding. However, since the measurement range of the interferometer in the rotation direction is narrow, it is desirable to correct the rotation and re-hold the die 51 when the amount of rotation of the die 51 is large. When the die 51 is re-held, it is necessary to measure the position of the die 51 again. During this operation, the surface position of the bonding surface of the die 51 as the second object may be measured using a second height measuring device (not shown). Since the thickness of the die 51 varies, it is advantageous to measure the surface position of the die 51 in order to manage the gap between the wafer 6 and the die 51 with high precision during the bonding operation. In addition, the heights of a plurality of positions on the die 51 may be measured, and the attitude of the die 51 or the wafer 6 during bonding may be adjusted by a tilt mechanism (not shown). Such a tilt mechanism may be incorporated in the wafer chuck 433 or the bonding head 453.

[0091] In step 1004, the bonding stage 45 is driven by the driving mechanism 437 so that the die 51 as the second object is positioned at a bonding target location selected from a plurality of bonding target locations of the wafer 6 as the first object. At this time, the control unit CNT can control the driving mechanism 437 so that the bonding stage 45 is feedback-controlled based on the measurement result by the interferometer 442. Also, at this time, the control unit CNT can determine the target position of the bonding stage 45 based on the position and rotation amount of the wafer 6 and the position and rotation amount of the die 51 measured in steps 1002 and 1003, and further the offset amount. Also, when a shift occurs due to the bonding operation as described later, the control unit CNT also takes that amount into account as the offset amount.

[0092] In step 1005, the die 51 as the second object is bonded to the selected bonding target location of the wafer 6 as the first object. As the operation for bonding, the bonding stage 45 or the bonding head 453 may be raised and lowered, or the wafer chuck 443 may be raised and lowered. In order to prevent the positioning accuracy from decreasing during the raising and lowering, a highly reproducible lifting and lowering drive system may be adopted, or the lifting and lowering may be performed while continuing feedback control. In order to perform the lifting and lowering while continuing feedback control, when the bonding stage 45 is raised and lowered, the width of the bar mirror in the Z-axis direction may be designed so that the bar mirror does not deviate from the optical path of the interferometer even during the raising and lowering. On the other hand, when the bonding head 453 or the wafer chuck 443 is raised and lowered, feedback control may be performed while monitoring the positional deviation of the bonding head 453 or the wafer chuck 433 in the X-axis and Y-axis directions with an encoder or a gap sensor. In addition, in order to control the gap between the first object and the second object with high precision, a linear encoder may be provided to measure the Z-axis position of the lifting and lowering drive mechanism. In addition, when the first object and the second object come into contact with each other, the bonding stage 45, which is feedback-controlled using an interferometer, is constrained, so the control method may be different before and after the contact, such as stopping the feedback control. Up to this point, the description has been given up to the point where the die 51 is brought into contact with the bonding target portion of the wafer 6, but in the case of bump bonding, a step required for bonding, such as pressing the die 51 against the wafer 6 with a predetermined pressure, and a step of observing the bonding state after bonding, may be added.

[0093] Step 1006 and subsequent steps are the same as in the first embodiment, and therefore the explanation will be omitted.

[0094] Next, a method for managing an offset amount reflected in the bonding position drive in step 1004 with respect to the position of the die 51 measured using the die observation camera 441 will be described with reference to the flowchart of Fig. 4. The process shown in the flowchart of Fig. 4 is controlled by the control unit CNT.

[0095] In step 3001, the wafer 6 as a first object is carried into the bonding apparatus SB and held by the wafer chuck 433. The wafer 6 has marks formed thereon for use in aligning the wafer 6 and marks for measuring a bonding deviation. The wafer 6 may be prepared so that the die 51 will not be displaced after mounting the die 51, for example, by placing a temporary adhesive on the portion to be bonded. The wafer 6 is roughly positioned by a pre-aligner (not shown) based on the notch or orientation flat and the wafer outer diameter position, and is carried to the wafer chuck 443 as a first holder on the lower base 44 and held by the wafer chuck 433.

[0096] In step 3002, the position of the alignment mark on the wafer 6 is measured using the wafer observation camera 451, and the mounting position and rotation amount of the wafer 6 are calculated based on the result. In this operation, the surface position of the bonding surface of the wafer 6 may be measured using a first height measuring device (not shown). Since the thickness of the wafer 6 varies, it is advantageous to measure the surface position of the wafer 6 in order to control the gap between the wafer 6 and the die 51 with high accuracy during the bonding operation.

[0097] In step 3003, a glass die with an alignment mark is held by a bonding head 453. The reason why a glass die is used is to check for bonding misalignment using a wafer observation camera 451 after bonding. Therefore, the die may be made of a material that transmits light of a wavelength detected by the wafer observation camera 451. For example, when observing using infrared light, a silicon die may be used. An alignment mark for measuring the position of the die and a mark for measuring bonding misalignment are formed on the die.

[0098] In step 3004, the position and rotation amount of the glass die with alignment marks held by the bonding head 453 are measured. Also, during this operation, the surface position of the bonding surface of the glass die with alignment marks may be measured using a second height measuring device (not shown). Since the thickness of the glass die with alignment marks varies, it is advantageous to measure the surface position of the glass die with alignment marks in order to control the gap between the wafer 6 and the die 51 with high precision during the bonding operation. Also, the heights of multiple positions on the glass die with alignment marks may be measured, and the attitude of the die 51 or the wafer 6 during bonding may be adjusted by a tilt mechanism (not shown). Such a tilt mechanism may be incorporated in the wafer chuck 433 or the bonding head 453.

[0099] In step 3005, the bonding stage 45 is driven by the driving mechanism 437 so that the glass die with the alignment mark is positioned at a bonding target location selected from a plurality of bonding target locations on the wafer 6. At this time, the control unit CNT can control the driving mechanism 437 so that the position of the bonding stage 45 is fed back based on the measurement result by the interferometer 442. Also, at this time, the control unit CNT can determine a target position of the bonding stage 45 based on the position and rotation amount of the wafer 6 measured in steps 3002 and 3004, and the position, rotation amount, and offset amount of the glass die with the alignment mark.

[0100] In step 3006 , similar to step 1005 , a glass die with an alignment mark is bonded to the selected bonding target location of the wafer 6 .

[0101] In step 3007, the bonding position is measured. Specifically, the driving mechanism 437 drives the bonding stage 45 so that the mark for measuring the bonding deviation is within the field of view of the wafer observation camera 451, and the bonding deviation between the wafer 6 and the glass die is measured using the wafer observation camera 451. In step 3008, the control unit CNT calculates an offset amount based on the positional deviation measured using the wafer observation camera 451. The calculated offset amount may include, for example, the shift amount in the X-axis direction and the Y-axis direction, and the rotation amount around the Z-axis direction. Here, a glass die may be bonded to each of the multiple bonding target locations of the wafer 6, and the offset amount may be calculated for each of the multiple bonding target locations. Alternatively, a glass die may be bonded to each of the multiple bonding target locations of the wafer 6, and the final offset amount may be calculated by averaging the offset amounts calculated for each of the multiple bonding target locations.

[0102] An example of positioning when bonding a die to a wafer will be described below using the measurement results of the positions of the wafer and the die, and a predetermined offset amount. Note that although the signs are inverted depending on how the coordinate direction is taken, the coordinate system shown in the figure will be used in the following example. The position of the wafer 6 measured in step 1002 (the position relative to the reference point of the bonding device BD) is (Wx, Wy), and the rotation amount is Wθ. Also, the position of the die 51 relative to the center of the image captured in step 1003 is (Dx, Dy), and the rotation amount is Dθ. Also, the shift amount generated during bonding is (Px, Py), and the rotation amount is Pθ. Also, the offset amount obtained in step 3008 is (X0, Y0), and θ0.

[0103] When the offset amount in step 3008 is correctly calculated, Wx = Wy = Wθ = Dx = Dy = Dθ = 0. When the same process as in step 3008 is used, bonding can be performed with high accuracy by sending the bonding stage 45 to (X0, Y0), θ0 for bonding.

[0104] If the position of the wafer 6 deviates from the reference of the wafer stage 43, for example, if it deviates in the positive direction, it can be corrected by moving the bonding stage 45 in the negative direction by that amount. Therefore, during bonding, it is sufficient to drive the bonding stage 45 to (X0+Wx, Y0+Wy), θ0+Wθ.

[0105] On the other hand, if the position of the die 51 deviates from the reference of the bonding head 423, for example, if it deviates in the positive direction, it can be corrected by moving the bonding stage 45 in the negative direction by that amount. Therefore, in order to adjust the bonding position, the bonding stage 45 should be driven to (X0+Wx-Dx, Y0+Wy-Dy), θ0+Wθ-Dθ during bonding.

[0106] Furthermore, since the amount of shift that occurs during bonding is shifted accordingly to set the bonding position, if there is a shift in the positive direction, bonding can be performed by moving the bonding stage 45 in the reverse direction by the same amount. Therefore, during bonding, the bonding stage 45 should be driven to (X0+Wx-Dx-Px, Y0+Wy-Dy-Py), θ0+Wθ-Dθ-Pθ.

[0107] <Fourth embodiment> The fourth embodiment will be described below, but matters not mentioned in the fourth embodiment may follow the third embodiment, or the first embodiment via the third embodiment. Fig. 9 is a diagram showing a schematic configuration of a bonding apparatus BD of the second embodiment. In the bonding apparatus BD of the fourth embodiment, the position of the bonding stage 45 is measured using an encoder.

[0108] Specifically, instead of the interferometer 442 and the bar mirror 452 in the bonding apparatus BD of the third embodiment, an encoder scale 444 and an encoder head 455 are employed in the bonding apparatus BD of the fourth embodiment. The encoder head 455 is a two-dimensional encoder head mounted on the bonding stage 45. The encoder scale 444 is a two-dimensional encoder mounted on the lower base 44. The encoder scale 444 has a two-dimensional scale so that the position of the bonding stage 45 can be measured within the movable range of the bonding stage 45. The encoder head 455 measures the position of the bonding stage 45 in the X-axis direction and the Y-axis direction.

[0109] The encoder scale 444 is made of a material with a low thermal expansion coefficient, and the scale can be drawn with high positional accuracy. In one example, the encoder scale 444 can be constructed by drawing a scale on a quartz substrate using a drawing method for a semiconductor lithography process. The bonding stage 45 can have a configuration in which a coarse movement stage driven in a large range and a fine movement stage driven in a small range with high accuracy are combined. In such a configuration, the encoder head 455 can be fixed on the fine movement stage to perform high-precision positioning. The driving mechanism 437 can constitute a positioning mechanism that changes the relative position between the wafer chuck 443 (or the wafer 6) as the first holding part and the bonding head 453 (or the die 51) as the second holding part. The encoder head 455 and the control unit CNT may be understood as components of the positioning mechanism.

[0110] With reference to FIG. 10, a method of using the reference plate 454 to ensure the origin position, magnification, X-axis and Y-axis directions (rotation) and orthogonality of the bonding stage 45 will be described. The output value of the interferometer when the mark 454a is located at the center of the output image of the die observation camera 441 is set as the origin of the bonding stage 45. Next, the mark 454b is observed by the die observation camera 441, and the Y-axis direction (rotation) and the Y-axis magnification of the bonding stage 45 are determined based on the output value of the encoder head 455 when the mark 454b is located at the center of the output image of the die observation camera 441. Next, the mark 454c is observed by the die observation camera 441, and the X-axis direction (rotation) and the X-axis magnification of the bonding stage 45 are determined based on the output value of the encoder head 455 when the mark 454c is located at the center of the output image of the die observation camera 441.

[0111] That is, the direction from the mark 454b to the mark 454a of the reference plate 454 is set as the Y axis of the bonding device BD, and the direction from the mark 454c to the mark 454a is set as the X axis of the bonding device BD, and the axis direction and the orthogonality can be calibrated. Also, the distance between the mark 454b and the mark 454a can be set as the scale reference of the Y axis of the bonding device BD, and the distance between the mark 454c and the mark 454a can be set as the scale reference of the X axis of the bonding device BD. The encoder head 455 expands due to heat, which causes the measurement value by the encoder head 455 to fluctuate. Therefore, it is desirable to perform calibration at any timing to guarantee the origin position, magnification, rotation, and orthogonality of the bonding stage 45. Instead of adopting a two-dimensional encoder, a linear encoder may be adopted for each of the X axis and the Y axis.

[0112] Instead of the above configuration, multiple encoder heads may be arranged and switched between depending on the positions of the parts to be joined, which is advantageous for reducing the footprint. Alternatively, a pair of encoder heads may be arranged symmetrically with respect to the parts to be joined, which is advantageous for improving the position measurement accuracy.

[0113] The above explanation is about an example of performing calibration by observing a reference plate. Alternatively, for example, calibration may be performed by abutting against a reference surface, or a calibration mechanism may be provided inside the encoder to make it a position measuring instrument with guaranteed absolute values. <Fifth embodiment> Hereinafter, the fifth embodiment will be described, but matters not mentioned as the fifth embodiment may follow the first embodiment. FIG. 11 is a diagram showing a schematic configuration of a bonding apparatus BD of a fourth embodiment. In the bonding apparatus BD of the first embodiment, a die observation camera 431 is mounted on a wafer stage 43, but in the bonding apparatus BD of the fifth embodiment, a die observation camera 411 is fixed to a position directly below a bonding head 423. The die observation camera 411 may be fixed to, for example, an upper base 42 or a stage base 41. That is, the wafer chuck 433 as a first holding unit and the die observation camera 411 as a second camera may be supported by different supports.

[0114] If the die observation camera 411 can be displaced relative to the bonding head 423, the amount of displacement may be measured and corrected. For example, by placing a predetermined mark on the bonding head 423 and observing it with the die observation camera 411, the amount of displacement of the die observation camera 411 relative to the bonding head 423 can be detected. Sixth embodiment Next, a method for manufacturing an article (such as a semiconductor IC element, a liquid crystal display element, or a MEMS) using the above-mentioned bonding device BD will be described. The article is manufactured by a process of preparing a first object, a process of preparing a second object, a process of manufacturing a bonded product by bonding the first object and the second object using the above-mentioned bonding device, and a process of processing the bonded product in other well-known processes. The other well-known processes include probing, dicing, bonding, packaging, and the like. According to this method for manufacturing an article, it is possible to manufacture an article of higher quality than before.

[0115] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0116] 6: wafer (first object), 42: upper base (support), 43: wafer stage, 51: die (second object), 421: wafer observation camera (first camera), 423: bonding head (second holder), 431: die observation camera (second camera), 433: wafer chuck (first holder), 436: drive mechanism, CNT: control unit

Claims

1. A joining device for joining a first object to a second object, comprising: A first holding portion that holds the first object; A second holding portion that holds the second object; a positioning mechanism that changes a relative position between the first holding portion and the second holding portion in a first direction and a second direction; a first camera for capturing an image of the first object; a second camera for capturing an image of the second object; a support portion that supports the second holding portion and the first camera; a control unit that controls the positioning mechanism in the first direction and the second direction based on an output of the first camera and an output of the second camera so that the second object is positioned with respect to a portion to be joined of the first object; A joining device comprising:

2. Further comprising a support structure for supporting the first holding portion and the second camera.

2. The joining device according to claim 1 .

3. the support structure has a first end surface on a side of a path along which the second object is transported to the second holding section, and a second end surface opposite to the first end surface, and the second camera is disposed between the first end surface and a virtual plane that passes through a center of the support structure and is parallel to the first end surface. The joining device according to claim 2 .

4. the second camera is disposed between the first holding unit and a predetermined position on a path along which the second object is transported to the second holding unit; The joining device according to claim 2 .

5. the support portion has a third end surface on the side of the path and a fourth end surface opposite to the third end surface, and the first camera is disposed between the third end surface and a virtual plane that passes through a center of the support portion and is parallel to the third end surface.

4. The joining apparatus according to claim 3.

6. The positioning mechanism changes the relative position by moving the support structure.

6. The joining apparatus according to claim 2, wherein the joining apparatus is a joining member.

7. a measuring device for measuring a position of the support structure; the control unit controls the positioning mechanism so that the support structure is feedback-controlled based on the measurement result by the measuring instrument. The joining device according to claim 6 .

8. The measuring instrument includes an interferometer or an encoder. The joining device according to claim 7 .

9. The positioning mechanism changes the relative position by moving the support portion.

6. The joining apparatus according to claim 1, wherein the joining apparatus is a joining member.

10. Further comprising a measuring device for measuring the position of the support portion, the control unit feedback-controls the positioning mechanism so that the support unit is positioned based on the measurement result by the measuring device. The joining device according to claim 9 .

11. The measuring instrument includes an interferometer or an encoder. The joining device according to claim 10 .

12. Further comprising a support structure for supporting the first holding portion, The first holding unit and the second camera are supported by different supports.

2. The joining device according to claim 1 .

13. the control unit controls the positioning mechanism based on a position of the portion to be welded of the first object identified based on an output of the first camera and a position of the second object identified based on an output of the second camera so that the second object is positioned with respect to the portion to be welded of the first object.

13. The joining device according to claim 1 .

14. the first direction and the second direction are directions along a horizontal plane, and the positioning mechanism changes the relative position with respect to rotation around an axis parallel to the first direction, the second direction, and a third direction perpendicular to the first direction and the second direction. The joining device according to any one of claims 1 to 13.

15. The control unit performs a process of identifying positions of a plurality of joining target locations of the first object using the first camera, and then controls the positioning mechanism so that a plurality of objects including the second object are joined to the plurality of joining target locations of the first object, respectively.

15. The joining device according to claim 1, wherein the joining device is a joining member.

16. The joining apparatus according to claim 15, characterized in that the control unit uses the first camera to measure the positions of a plurality of measurement target locations of the first object, and the number of the plurality of measurement target locations is less than the number of the plurality of joining target locations.

17. 1. A method for joining a first object to a second object, comprising: a first holding step of holding the first object by a first holding part; a second holding step of holding the second object by a second holding part; a first imaging step of imaging the first object held by the first holding unit; a second imaging step of imaging the second object held by the second holding unit; a joining process of positioning and joining the second object in a first direction and a second direction such that the second object is positioned with respect to a joining target portion of the first object based on the image captured in the first imaging process and the image captured in the second imaging process; A bonding method comprising the steps of:

18. 1. A method for joining a first object to a second object, comprising: a first holding step of holding the first object by a first holding part; a second holding step of holding the second object by a second holding part; a first measurement step of determining positions of a plurality of locations to be joined of the first object based on an image of the first object held by the first holding unit; a second measuring step of determining a position of the second object based on an image of the second object held by the second holding unit; a joining step of positioning and joining the second object to one of the plurality of welding target locations determined in the first measurement step based on the position of the second object determined in the second measurement step, The second measuring step and the joining step are performed on all of the plurality of joining target locations. A bonding method comprising the steps of:

19. Providing a first object; Providing a second object; A step of forming a joined object by joining the first object to the second object according to the joining method according to claim 17 or 18; treating the bonded material to obtain an article; A method for manufacturing an article, comprising:

Images