Plasma generation device and control method therefor

Abstract

To provide a plasma generation device or a control method therefor, capable of assisting an initial discharge of a plasma.SOLUTION: According to an embodiment of the present specification, a plasma generation device comprises: a chamber providing a generation space for a plasma; an antenna module that is arranged adjacent to the chamber, and connected to a first power source and generates induced electric field in the chamber; an electrode that is arranged adjacent to the chamber, and connected to a second power source, and assists in a generation of the plasma; a sensor that acquires sensing information related to a state of the plasma; and a controller that controls the first and second power sources.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present specification relates to a plasma generation device and a control method thereof, and more particularly to a plasma generation device and a control method thereof that assists initial discharge of plasma. [Background technology]

[0002] Plasma discharges are used in many industrial and scientific applications. They can be used to generate activated species of various gases that are used in various industries, such as semiconductor wafer processing, and to treat by-products produced in industrial processes.

[0003] As a plasma source for generating plasma discharge, inductively coupled plasma or capacitively coupled plasma is widely used. Inductively coupled plasma is a method in which RF power is applied to a coil to form an inductive electric field, and plasma discharge occurs through the inductive electric field.

[0004] Methods such as using a separate igniter or inputting more power are used for the initial discharge (ignition) of plasma. However, there are problems with ignition support methods that do not take into account the plasma generation state, such as the possibility of damaging the equipment and introducing impurities into the generated active species. In response to this, the need for developing a method to support the initial discharge of plasma while minimizing damage to the equipment and the generation of impurities has been recognized. Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present specification is to provide a plasma generating device that assists initial discharge of plasma and a control method thereof.

[0006] Another object of the present invention is to provide a plasma generating device or a control method thereof that minimizes damage to the device caused by the initial discharge of plasma.

[0007] The problems to be solved by this specification are not limited to those mentioned above, and problems not mentioned should be clearly understood by a person skilled in the art to which the present invention pertains from this specification and the drawings. [Means for solving the problem]

[0008] According to one embodiment of the present specification, a plasma generation device includes a chamber providing a plasma generation space, an antenna module arranged around the chamber and connected to a first power source to form an induced electric field in the chamber, an electrode arranged around the chamber and connected to a second power source to assist in the generation of the plasma, a sensor for acquiring sensing information on a state of the plasma, and a controller for controlling the first power source and the second power source, wherein the controller applies an RF voltage to a load including the antenna module via the first power source from a first time point, acquires the sensing information on the state of the plasma due to the application of the RF voltage, and controls the second power source based on the sensing information from a second time point that is a predetermined time after the first time point, and the controller applies a pulse voltage to the electrode via the second power source if the sensing information at the second time point does not satisfy a predetermined condition, and does not apply the pulse voltage to the electrode via the second power source if the sensing information at the second time point satisfies a predetermined condition.

[0009] According to one embodiment of the present specification, there is provided a method for controlling a plasma generating apparatus including a chamber providing a plasma generation space, an antenna module arranged around the chamber and connected to a first power source to form an induced electric field in the chamber, an electrode arranged around the chamber and connected to a second power source to assist in the generation of the plasma, a sensor for acquiring sensing information on a state of the plasma, and a controller for controlling the first power source and the second power source, the method including: the controller applying an RF voltage to a load including the antenna module via the first power source from a first time point; the controller acquiring the sensing information on the state of the plasma due to the application of the RF voltage; and the controller controlling the second power source based on the sensing information from a second time point that is a predetermined time after the first time point, the step of the controller controlling the second power source including: not applying a pulse voltage to the electrode via the second power source if the sensing information at the second time point satisfies a predetermined condition, but applying the pulse voltage to the electrode via the second power source if the sensing information at the second time point does not satisfy the predetermined condition.

[0010] The solutions to the problems presented in this specification are not limited to the solutions described above, and solutions not mentioned should be clearly understood by those skilled in the art to which the present invention pertains from this specification and drawings. Effect of the Invention

[0011] According to the present specification, it is possible to provide a plasma generating device that can generate an initial plasma discharge more quickly.

[0012] According to the present specification, it is possible to provide a plasma generating device in which the generation of impurities due to the assistance of the initial plasma discharge is suppressed.

[0013] The effects of this specification are not limited to the effects described above, and effects not mentioned should be clearly understood by those skilled in the art to which the present invention pertains from this specification and drawings. [Brief description of the drawings]

[0014] [Figure 1] FIG. 1 is a diagram for explaining a plasma generation system according to an embodiment of the present specification. [Diagram 2] FIG. 1 is a diagram for explaining a plasma generation system according to an embodiment of the present specification. [Diagram 3] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Figure 4] FIG. 2 is a diagram illustrating a DC electrode according to an embodiment of the present specification. [Diagram 5] FIG. 2 is a diagram illustrating a DC power supply according to an embodiment of the present specification. [Figure 6] FIG. 2 is a diagram illustrating a DC electrode according to an embodiment of the present specification. [Figure 7] FIG. 2 is a diagram illustrating a DC power supply according to an embodiment of the present specification. [Figure 8] 1 is a diagram for explaining an antenna module according to an embodiment of the present specification; [Figure 9] 1A to 1C are diagrams for explaining the operation of an antenna module according to an embodiment of the present specification. [Figure 10] 1 is a diagram for explaining an antenna module according to an embodiment of the present specification; [Figure 11] 1A to 1C are diagrams for explaining the operation of an antenna module according to an embodiment of the present specification. [Figure 12] 1 is a diagram for explaining an antenna module according to an embodiment of the present specification; [Figure 13] FIG. 2 is a diagram for explaining an RF power supply according to an embodiment of the present specification. [Figure 14] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 15]FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Figure 16] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 17] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 18] 1A to 1C are diagrams for explaining an output current and an output of a high voltage pulse according to a control method for a plasma generation device according to an embodiment of this specification. [Figure 19] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 20] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 21] 1A to 1C are diagrams for explaining an output current and an output of a high voltage pulse according to a control method for a plasma generation device according to an embodiment of this specification. [Figure 22] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 23] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 24] 1A to 1C are diagrams for explaining an output current and an output of a high voltage pulse according to a control method for a plasma generation device according to an embodiment of this specification. [Diagram 25] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 26] FIG. 2 is a diagram for explaining a plasma generation process according to an embodiment of the present specification. [Figure 27] 1A to 1C are diagrams for explaining an output current and an output of a high voltage pulse according to a control method for a plasma generation device according to an embodiment of this specification. [Figure 28] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Figure 29] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Diagram 30]FIG. 13 is a diagram showing a power signal in a plasma generating device including a sensor according to an embodiment of the present specification and a control signal for a high voltage pulse that is changed based on the power signal. [Diagram 31] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Diagram 32] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Diagram 33] FIG. 1 is a diagram for explaining a plasma generating device according to an embodiment of the present specification. [Diagram 34] FIG. 1 is a diagram for explaining a plasma generating device according to some embodiments of the present specification. [Diagram 35] FIG. 13 is a diagram showing a power signal in a plasma generating device including a sensor according to an embodiment of the present specification and a control signal for a high voltage pulse that is changed based on the power signal. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] According to one embodiment of the present specification, a plasma generation device includes a chamber providing a plasma generation space, an antenna module arranged around the chamber and connected to a first power source to form an induced electric field in the chamber, an electrode arranged around the chamber and connected to a second power source to assist in the generation of the plasma, a sensor for acquiring sensing information on a state of the plasma, and a controller for controlling the first power source and the second power source, wherein the controller applies an RF voltage to a load including the antenna module via the first power source from a first time point, acquires the sensing information on the state of the plasma due to the application of the RF voltage, and controls the second power source based on the sensing information from a second time point that is a predetermined time after the first time point, and the controller applies a pulse voltage to the electrode via the second power source if the sensing information at the second time point does not satisfy a predetermined condition, and does not apply the pulse voltage to the electrode via the second power source if the sensing information at the second time point satisfies a predetermined condition.

[0016] According to one embodiment of the present specification, according to the predetermined condition, the controller may apply the pulse voltage to the electrode via the second power source when the sensing information indicates that the plasma has not been generated in the chamber, and may not apply the pulse voltage to the electrode when the sensing information indicates that the plasma has been generated in the chamber.

[0017] According to an embodiment of the present specification, the sensing information acquired by the sensor may indicate power supplied to the load via the first power source.

[0018] According to one embodiment of the present specification, the controller may apply the pulse voltage to the electrode if the sensing information at the second time indicates that the power supplied to the load is less than a reference power, and may not apply the pulse voltage to the electrode if the sensing information at the second time indicates that the power supplied to the load is equal to or greater than a reference power.

[0019] According to one embodiment of the present specification, the first power source may include a DC power source and an inverter that converts DC power of the DC power source into RF power, the sensor is located between the DC power source and the inverter, and acquires a first voltage output by the DC power source and a first current output from the DC power source, and the controller may apply the pulse voltage to the electrode based on a power supplied to the load determined based on the first voltage and the first current.

[0020] According to an embodiment of the present specification, the sensor may obtain the sensing information based on a second current flowing through the antenna module.

[0021] According to one embodiment of the present specification, the controller may apply the pulse voltage to the electrode if the phase difference between the second current and the RF voltage at the second time point does not satisfy the predetermined condition, and may not apply the pulse voltage to the electrode if the phase difference between the second current and the RF voltage at the second time point satisfies the predetermined condition.

[0022] According to one embodiment of the present specification, if the sensing information at the second time point does not satisfy the predetermined condition, the controller may apply a first pulse voltage to the electrode via the second power source so that the electrode provides a first power, and if the sensing information at a third time point after the second time point does not satisfy the predetermined condition, the controller may apply a second pulse voltage to the electrode via the second power source so that the electrode provides a second power greater than the first power.

[0023] According to one embodiment of the present specification, the controller may apply a first pulse voltage having a first voltage value to the electrode via the second power source when the sensing information at the second time point does not satisfy the predetermined condition, and may apply a second pulse voltage having a second voltage value greater than the first voltage value to the electrode via the second power source when the sensing information at a third time point after the second time point does not satisfy the predetermined condition.

[0024] According to one embodiment of the present specification, the controller may apply the pulse voltage to the electrode at a first period if the sensing information does not satisfy the predetermined condition at the second time point, and may apply the high voltage pulse to the electrode at a second period shorter than the first period if the sensing information does not satisfy the predetermined condition at a third time point that is one hour after the second time point.

[0025] According to one embodiment of the present specification, the controller may apply an RF voltage having a first magnitude to the load via the first power source from the first time point, and if the sensing information does not satisfy the predetermined condition at a third time point that is after the first time point and before the second time point, apply an RF voltage having a second magnitude greater than the first magnitude to the load.

[0026] According to one embodiment of the present specification, the controller may apply the pulse voltage having a first voltage value to the electrode via the second power source when the sensing information does not satisfy the predetermined condition at the second time point, and may interrupt the application of the pulse voltage when the sensing information satisfies the predetermined condition at a third time point that is later than the second time point.

[0027] According to one embodiment of the present specification, there is provided a method for controlling a plasma generation apparatus including a chamber providing a plasma generation space, an antenna module arranged around the chamber and connected to a first power source to form an induced electric field in the chamber, an electrode arranged around the chamber and connected to a second power source to assist in the generation of the plasma, a sensor for acquiring sensing information on a state of the plasma, and a controller for controlling the first power source and the second power source, the method including: the controller applying an RF voltage to a load including the antenna module via the first power source from a first time point; the controller acquiring the sensing information on the state of the plasma due to the application of the RF voltage; and the controller controlling the second power source based on the sensing information from a second time point that is a predetermined time after the first time point, the step of the controller controlling the second power source including: if the sensing information at the second time point satisfies a predetermined condition, the controller does not apply a pulse voltage to the electrode via the second power source; and if the sensing information at the second time point does not satisfy the predetermined condition, the controller applies the pulse voltage to the electrode via the second power source.

[0028] According to one embodiment of the present specification, controlling the second power source by the controller may include the controller applying the pulse voltage to the electrode via the second power source when the sensing information indicates that the plasma has not been generated in the chamber, and not applying the pulse voltage to the electrode when the sensing information indicates that the plasma has been generated in the chamber.

[0029] According to an embodiment of the present specification, the sensing information acquired by the sensor may indicate power supplied to the load via the first power source.

[0030] According to one embodiment of the present specification, controlling the second power source by the controller may include applying the pulse voltage to the electrode when the sensing information at the second time indicates that the power supplied to the load is less than a reference power, and not applying the pulse voltage to the electrode when the sensing information at the second time indicates that the power supplied to the load is equal to or greater than a reference power.

[0031] According to one embodiment of the present specification, the first power source may include a DC power source and an inverter that converts DC power of the DC power source into RF power, the sensor is located between the DC power source and the inverter, and obtains a first voltage output by the DC power source and a first current output from the DC power source, and the controller may control the second power source based on a power supplied to the load determined based on the first voltage and the first current.

[0032] According to an embodiment of the present specification, the sensor may obtain the sensing information based on a second current flowing through the antenna module.

[0033] According to one embodiment of the present specification, the control of the second power source by the controller may further include the controller acquiring the sensing information, and applying the pulse voltage to the electrode if a phase difference between the second current and the RF voltage at the second time point does not satisfy the predetermined condition, and not applying the pulse voltage to the electrode if a phase difference between the second current and the RF voltage at the second time point satisfies the predetermined condition.

[0034] According to one embodiment of the present specification, the step of the controller controlling the second power source may include, when the sensing information at the second time point does not satisfy the predetermined condition, applying a first pulse voltage to the electrode via the second power source so that the electrode provides a first power, and when the sensing information at a third time point after the second time point does not satisfy the predetermined condition, applying a second pulse voltage to the electrode via the second power source so that the electrode provides a second power greater than the first power.

[0035] According to one embodiment of the present specification, the step of the controller controlling the second power source may further include a step of the controller applying a first pulse voltage having a first voltage value to the electrode via the second power source if the sensing information at the second time point does not satisfy the predetermined condition, and not applying the first pulse voltage to the electrode if the sensing information satisfies the predetermined condition, and a step of the controller applying a second pulse voltage having a second voltage value greater than the first voltage value to the electrode via the second power source if the sensing information at a third time point after the second time point does not satisfy the predetermined condition.

[0036] According to one embodiment of the present specification, the controller controlling the second power source may further include applying the pulse voltage to the electrode at a first period if the sensing information does not satisfy the predetermined condition at the second time point, and applying the pulse voltage to the electrode at a second period smaller than the first period if the sensing information does not satisfy the predetermined condition at a third time point that is one hour after the second time point.

[0037] According to one embodiment of the present specification, the controller applying the RF voltage to the load via the first power source may further include applying the RF voltage to the load at a first magnitude from the first time point, and applying the RF voltage to the load at a second magnitude greater than the first magnitude at a third time point that is after the first time point and before the second time point, if the sensing information does not satisfy the predetermined condition.

[0038] According to one embodiment of the present specification, the step of the controller controlling the second power source may include a step of the controller applying a pulse voltage having a first voltage value to the electrode via the second power source when the sensing information at the second time point does not satisfy the predetermined condition, and a step of the controller interrupting the application of the pulse voltage when the sensing information at a third time point after the second time point satisfies the predetermined condition. (Mode for carrying out the invention)

[0039] The above objects, features, and advantages of the present specification will become more apparent from the following detailed description in conjunction with the drawings. However, the contents described in the present specification can be modified in various ways and can have various embodiments, and a specific embodiment will be illustrated in the drawings and described in detail below.

[0040] In the drawings, the thickness of layers and regions are exaggerated for clarity, and when an element or layer is referred to as being "on" or "on" another element or layer, this includes not only directly on the other element or layer, but also when there are other layers or other elements in between. In principle, the same reference numbers refer to the same elements throughout the specification. Furthermore, the same reference numbers are used to describe elements that have the same functions within the same concept shown in the drawings of each embodiment.

[0041] The numbers (eg, first, second, etc.) used in the course of the description of this specification are merely identifiers for distinguishing one component from another.

[0042] In addition, the suffixes "module" and "part" for components used in the following description are given or mixed together solely for the ease of drafting the specification, and do not in themselves have any distinct meanings or roles.

[0043] The method according to the embodiment may be embodied in the form of program instructions that can be executed by various computer means and recorded on a computer readable medium. The computer readable medium may include, alone or in combination, program instructions, data files, data structures, and the like. The program instructions recorded on the medium may be those specifically designed and constructed for the embodiment or those known and available to those skilled in the art of computer software. Examples of computer readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes, optical media such as CD-ROMs, DVDs, magneto-optical media such as floptical disks, and hardware devices specifically configured to store and execute program instructions such as ROM, RAM, flash memory, and the like. Examples of program instructions include not only machine language code, such as produced by a compiler, but also high-level language code that can be executed by a computer using an interpreter, and the like. The above hardware devices may be configured to operate as one or more software modules to perform the operations of the embodiment, and vice versa.

[0044] 1. Plasma Discharge This specification describes an apparatus, system, method, etc. for performing plasma discharge. This specification describes, in some embodiments, an apparatus, system, method, etc. for generating ignition in a plasma discharge space before the execution of a main plasma discharge to assist the plasma discharge and assist the initial discharge of the plasma.

[0045] 1.1 System According to one embodiment, a plasma discharge system can be provided.

[0046] 1 is a diagram illustrating a plasma discharge system. Referring to FIG 1, the plasma generating system may include a power supply unit 100 for providing power, a plasma generating unit 200 for generating plasma by obtaining power from the power supply unit, and a gas supply unit 300 for supplying gas to the plasma generating unit 200. The plasma generating system may further include a processing unit 400 for performing a process using the generated plasma.

[0047] The power supply unit 100 may supply power required for generating plasma. The power supply unit 100 may supply power to the plasma generating unit. The power supply unit 100 may include a DC power supply and / or an RF power supply. The power supply unit 100 may provide a high voltage pulse to the plasma generating unit 200 via the DC power supply. The power supply unit 100 may provide RF power to the plasma generating unit 200 via the RF power supply.

[0048] The plasma generating unit 200 may perform plasma discharge. The plasma generating unit 200 may obtain a discharge gas and perform plasma discharge through the discharge gas. The plasma generating unit 200 may perform inductively coupled plasma discharge or capacitively coupled plasma discharge.

[0049] The plasma generating unit 200 may be a remote plasma source. The plasma generating unit 200 may generate activated species and provide the generated activated species to the processing unit 400.

[0050] The plasma generating unit 200 may include an atmospheric pressure plasma device that generates plasma discharge under atmospheric pressure (normal pressure). For example, the plasma generating unit 200 may include an atmospheric pressure plasma device that generates plasma discharge under several hundred Torr to atmospheric pressure (750 Torr).

[0051] The plasma generating unit 200 may include a low pressure plasma device that performs low pressure plasma discharge. For example, the plasma generating unit 200 may include a low pressure plasma device that creates an environment with an initial vacuum (base pressure) of 10-5 to 10-7 Torr or less and then generates plasma at a process pressure of several mTorr to several Torr using a desired process gas.

[0052] The plasma generating unit 200 can perform low-temperature plasma discharge operations at tens to hundreds of degrees. For example, the plasma generating unit 200 can perform low-pressure low-temperature plasma discharge operations such as cleaning, etching, deposition, surface treatment, and material synthesis in semiconductor and display processes. In addition, for example, the plasma generating unit 200 can perform atmospheric pressure low-temperature plasma discharge operations for cleaning processes of glass substrates, hydrophilic / hydrophobic surface modification, nanotechnology, sterilization, removal of harmful substances, and carbon dioxide reduction.

[0053] The plasma generating unit 200 can also perform high-temperature plasma discharge operations for plasma welding, cutting, plasma metallurgy, and the like, at high temperatures of several thousand to several tens of thousands of degrees.

[0054] The plasma generating unit 200 may generate a seed charge for plasma generation. In particular, when the plasma generating unit 200 performs atmospheric pressure plasma discharge, the plasma generating unit 200 may generate a seed charge for initial discharge. The plasma generating unit 200 includes a DC electrode, and may generate a seed charge when a DC high voltage pulse is provided to the DC electrode.

[0055] The plasma generating unit 200 can perform initial discharge and main discharge for plasma generation. The plasma generating unit 200 can perform initial discharge by a capacitive coupling mode (E mode) or main discharge by an inductive coupling mode (H mode). The plasma generating unit 200 includes an inductive coupling antenna including a coil, and can perform initial discharge or main discharge by providing RF power to the inductive coupling antenna.

[0056] The specific configuration and operation of the plasma generating unit 200 will be described in more detail below.

[0057] The gas supplying unit 300 may supply a gas for plasma discharge to the plasma generating unit 200. The gas supplying unit 300 may supply a reactive gas or a process gas to the plasma generating unit 200. The gas supplying unit 300 may supply a gas selected according to a function or purpose of the plasma generating unit 200 or the process unit 400.

[0058] For example, the gas supply unit 300 supplies NF3 gas (nitrogen trifluoride gas), Ar gas (argon gas), Xe gas (xenon gas), Kr gas (krypton gas), N2 gas (nitrogen gas), O2 gas (oxygen gas), H2 gas (hydrogen gas), He gas (helium gas), Ne gas (neon gas), SiH4 gas (monosilane gas), NH3 gas (ammonia gas), PH3 gas (phosphine gas), B2H6 gas (diborane gas), and the like. The plasma generating unit 200 can be supplied with any one of the following gases or a mixture of gas and air: tetrafluoroethylene (DCS), dichlorosilane (DCS) gas, octafluoropentene (C5F8) gas, carbon tetrafluoride (CF4), hydrogen bromide (HBr), chlorine (Cl2), xenon (Xe), krypton (Kr), sulfur hexafluoride (SF6), and methane (CH4). The gas supply unit 300 can also supply gas to the plasma generating unit via a liquid-phase precursor such as tetra-ethyl-ortho-silicate (TEOS), tetrakis ((ethylmethylamino)zirconium), trimethyl aluminum, or hexamethyldisiloxane.

[0059] The processing unit 400 may perform a process before or after plasma discharge. The processing unit may perform a target process through the plasma generated by the plasma generating unit 200. Alternatively, the processing unit 400 may deliver a material generated by the execution of a target process to the plasma generating unit.

[0060] The target process may be a cleaning process that removes fine oil films on the surface through collision of plasma ions / radicals with the surface of the material to be treated, an etching process that generates plasma using a reactive etching gas according to the purpose and uses it to selectively remove materials, a deposition process that deposits materials on the surface by injecting a deposition gas suitable for the purpose and an additive gas for plasma discharge, a modification process that changes the characteristics of the surface using plasma, a material decomposition process that decomposes the target material through plasma discharge, etc.

[0061] The process unit 400 can perform a target operation related to semiconductor substrate processing. For example, the process unit 400 can perform a cleaning process for the inside of a process chamber by receiving activated species (e.g., activated hydrogen species) from the plasma generating unit.

[0062] The processing unit 400 may include a processing chamber, a substrate holder disposed within the processing chamber on which a semiconductor substrate (e.g., a silicon semiconductor substrate) to be processed is positioned, a showerhead disposed on top of the substrate holder for supplying substrate processing materials into the processing chamber, and / or a vacuum pump for evacuating air from within the processing chamber.

[0063] The plasma generating system may be configured such that the processing unit 400 performs a target process through plasma generated through the plasma generating unit, or a by-product generated by the target process of the processing unit 400 is treated by the plasma generating unit 200. Figure 2 is a diagram for explaining a plasma generating system according to some embodiments.

[0064] 2(a), a plasma generation system according to an embodiment may include a processing unit 401 and a plasma generating unit 201 for treating a material generated by the processing unit 401. For example, referring to FIG. 2(a), the plasma generation system may include a gas scrubber device. The processing unit 401 is a device for performing a semiconductor manufacturing process, and the plasma generating unit 201 may perform treatment of a difficult-to-biodegrade gas, such as sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), or perfluorocarbon (PFC) gas, generated in the semiconductor manufacturing process of the processing unit 401.

[0065] 2(b), the plasma generation system according to an embodiment may include a plasma generating unit 202 that generates activated species and supplies the activated species to a processing unit 402, and a processing unit 402 that performs a process using the activated species. For example, the plasma generating unit 202 may generate activated species by plasma discharging gas such as NF3, H2, N2, O2, C3F8, CF4, Cl2, SiH4, Ar, etc. The processing unit 402 may perform operations such as dry etching, PECVD, PVD, ashing, cleaning, etc., using the activated species generated by the plasma generating unit 202.

[0066] 1.2 Plasma discharge device 1.2.1 Structure of the plasma discharge device According to one embodiment, an apparatus for generating a plasma discharge can be provided.

[0067] FIG. 3 is a diagram for explaining a plasma generating apparatus according to an embodiment. Referring to FIG. 3, the plasma generating apparatus according to an embodiment may include a frequency variable RF power supply 101 and a plasma generating unit that generates plasma by receiving power from the RF power supply 101. Referring to FIG. 3, the plasma generating unit may include a discharge tube 210, gas tubes 211 and 213 located in the discharge tube 210, and an antenna module 220 including an antenna disposed around the discharge tube 210 and receiving power from the RF power supply unit 120 to form an induction electric field to generate plasma in the discharge tube 210. The plasma generating apparatus may include an electrode 230 to which a high voltage pulse is applied by the DC power supply unit 110. The plasma generating apparatus may further include an auxiliary gas supply nozzle 250.

[0068] The RF power source 101 can change the driving frequency within a variable frequency range. The RF power source 101 can have a variable frequency range of several hundred kHz to several tens of MHz and a power of several tens of kW or more. For example, the RF power source 101 can provide a power of 8 kW or less. For example, the RF power source 101 can be an AC power source providing power at a frequency within a range of 100 kHz to 5 MHz.

[0069] The RF power supply 101 can change the drive frequency to perform impedance matching. The RF power supply 101 can change the drive frequency to operate the plasma generating unit in a resonant state.

[0070] The RF power source 101 may include a rectifier that converts commercial AC power into DC power, a controller that provides a switching signal to control the driving frequency and power, and an inverter that converts the DC power into RF power based on the switching signal of the controller.

[0071] The discharge tube 210 may be prepared in the form of a cylindrical tube. The outer diameter of the discharge tube 210 may be several centimeters to several tens of centimeters. The inner diameter of the discharge tube 210 may be several millimeters to several centimeters smaller than the outer diameter.

[0072] Discharge tube 210 may be a dielectric discharge tube. Discharge tube 210 may be made of a non-conductive material such as ceramic (e.g., alumina or AlN), sapphire, quartz, or the like.

[0073] The discharge tube 210 can provide a discharge region where plasma is located. The pressure inside the discharge tube 210 can be adjusted to be different from the outside. The pressure inside the discharge tube 210 can be adjusted to a very low pressure conforming to a vacuum, a low pressure of several millitorr, or a normal pressure equal to or higher than atmospheric pressure, as required.

[0074] The gas tubes 211 and 213 may provide a path for supplying gas to the discharge tube 210 and the inside of the discharge tube 210. The gas tubes 211 and 213 may suppress contact of plasma with the inner wall of the discharge tube 210 and ensure plasma stability.

[0075] There may be one or more gas tubes 211, 213. The gas tubes may include a first gas tube 211 and a second gas tube 213. The first gas tube 211 and the second gas tube 213 may have a concentric structure. The first gas tube 211 may provide an input path for a first gas (e.g., a gas for reaction such as methane gas). The second gas tube 213 may provide an input path for a second gas (e.g., a gas mainly composed of carbon dioxide) having a different composition from the first gas.

[0076] The first gas tube 211 and the second gas tube 213 can provide a swirl flow. For example, the first gas tube 211 can provide an inner swirl flow and the second gas tube 213 can provide an outer swirl flow.

[0077] The plasma generating device can include an antenna module 220. The antenna module 220 can receive power from the RF power supply 120 and generate a plasma discharge inside the discharge tube 210. The antenna module 220 is described in more detail below with respect to FIG.

[0078] The antenna module 220 is supplied with power from the RF power supply unit 120 and can induce plasma discharge inside the discharge tube 210. The antenna module 220 is supplied with RF power from the RF power supply unit 120 and can generate capacitively coupled plasma and / or inductively coupled plasma inside the discharge tube 210.

[0079] The antenna module 220 may include a solenoid coil wound several times in succession around the discharge tube 210. The antenna module 220 may include multiple turns wound around the discharge tube 210 and an auxiliary capacitor disposed between each turn.

[0080] The plasma generating device may include a DC electrode 230 located on the periphery of the antenna module 220. The plasma generating device may include one or more electrodes connected to a DC power supply 110. The DC electrode 230 is described in more detail below.

[0081] The auxiliary gas supply nozzle 250 may supply auxiliary gas into the discharge tube 210. The auxiliary gas supply nozzle 250 may be located adjacent to one end of the discharge tube 210 opposite to the other end where gas is introduced. The auxiliary gas supply nozzle 250 may be disposed around the periphery of the discharge tube 210 and between the antenna module 220 and the gas exhaust port (the outlet of the discharge tube 210).

[0082] The plasma generating device may further include a safety case 190 that encases the discharge tube 210 and the antenna module 220 and isolates them from external influences while ensuring safety.

[0083] 1.2.2 DC power supply and DC electrodes The plasma discharge device according to an embodiment may include an electrode to which a high voltage is applied. The plasma discharge device according to an embodiment may include a DC electrode to which a high voltage is applied by a DC power supply. The DC electrode may form an electric field in the discharge tube when a high voltage is applied to the electrode by the DC power supply. The DC electrode may form a strong electric field in a predetermined direction and provide a seed charge in the discharge tube when a high voltage is applied to the electrode by the DC power supply. The DC electrode may provide a seed charge in the discharge tube and induce, promote or assist plasma discharge.

[0084] The DC electrodes may obtain a high voltage from a DC power supply. The DC power supply may apply high voltage pulses to the DC electrodes. The DC power supply may apply high voltage pulses to the DC electrodes at predetermined time intervals. The strength and amplitude of the high voltage pulses may be given at predetermined values.

[0085] The plasma discharge device can apply a high voltage (or a high voltage pulse) to an electrode (or a DC electrode) via a power supply (or a DC power supply). Throughout this specification, the high voltage applied to the electrode can be understood to include various forms of DC voltage signals. The high voltage applied to the electrode can include various forms of DC voltage signals except alternating current. For example, the high voltage applied to the electrode can have a spherical (square or rectangular) pulse waveform. Also, for example, the high voltage applied to the electrode can have a pulse waveform according to a portion (e.g., half cycle) of a sine wave.

[0086] According to one embodiment, the plasma discharge device can change the voltage (or high voltage pulse) signal applied to the electrode (or DC electrode) as needed. The plasma discharge device can gradually or sequentially increase or decrease the magnitude of the voltage applied to the electrode.

[0087] In the following, several embodiments of DC electrodes and DC power supplies are described.

[0088] FIG. 4 is a diagram for explaining a DC electrode according to one embodiment.

[0089] 4(a), a plasma generating device according to an embodiment may include one or more electrodes that are located around the antenna module 220 to generate plasma discharge and are connected to a DC power source. The plasma generating device may include a first electrode 231 located above the antenna module 220 and a second electrode 233 located below the antenna module 220.

[0090] Referring to FIG. 4(b), the plasma generating device may include a first electrode 231 located on the outer surface of the discharge tube and located above the induction coil 221 of the antenna module 220, and a second electrode 233 arranged to surround the outer surface of the discharge tube and located below the induction coil 221. Referring to FIG. 4(b), the first electrode 231 may be in the form of a square plate. The second electrode 233 may be "C" shaped. Alternatively, the second electrode 233 may include a plurality of slits. In order to prevent vortex currents from flowing in the second electrode 233 due to the influence of the induction electric fields E1 and E2 formed by the induction coil, the second electrode 233 may have an open loop structure that does not completely surround the outer wall of the discharge tube.

[0091] The DC power supply can apply a positive high voltage to the first electrode 231 and a negative high voltage to the second electrode 233. When a high voltage pulse is applied between the first electrode 231 and the second electrode 233 by the DC power supply, a capacitively coupled plasma discharge, for example a vertical streamer discharge, can occur between the first electrode 231 and the second electrode 233.

[0092] FIG. 5 is a diagram for explaining a DC power supply according to an embodiment.

[0093] Referring to FIG. 5(a), the DC power supply includes an AC-DC converter 111 that converts commercial AC power into a DC voltage, a high-voltage pulse generator 113 that generates a positive DC high-voltage pulse via the DC voltage, and a controller 112 that controls the high-voltage pulse generator.

[0094] FIG. 5(b) is a diagram for explaining one embodiment of the high-voltage pulse generator explained in FIG. 5(a).

[0095] 5(b), the high voltage pulse generator 113 according to an embodiment may include a first transformer 113a including a primary coil for receiving a DC voltage from an AC-DC converter and a secondary coil for generating a positive DC high voltage pulse, a first power transistor 113b connected to the primary coil of the first transformer 113a, a second transformer 113c including a primary coil for receiving a DC voltage from the AC-DC converter and a secondary coil for generating a negative DC high voltage pulse, and a second power transistor 113d connected to the primary coil of the second transformer. The control unit 112 may control the gates of the first transistor 113b and the second transistor 113d. One end of the secondary coil of the first transformer 113a is grounded, and the other end of the secondary coil of the first transformer 113a may output a positive DC high voltage pulse Vo1. One end of the secondary coil of the second transformer 113c is grounded, and the other end of the secondary coil of the second transformer 113c can output a negative DC high-voltage pulse Vo2.

[0096] The DC voltage Vin may be a direct current power supply of 12 to 24 V. The control unit 112 may synchronously control the on-time and repetition frequency of the first power transistor 113b and the second power transistor 113d. The voltage of the DC high voltage pulse may be several tens of kV, for example, 10 to 50 kV. The repetition frequency of the DC high voltage pulse may be several kHz to several tens of kHz, for example, 10 kHz to 100 kHz.

[0097] FIG. 6 is a diagram for explaining a discharge electrode according to another embodiment.

[0098] Referring to FIG. 6(a), a plasma generating device according to an embodiment may include an electrode 231 connected to a DC power source 110 and positioned around an antenna module 220 for generating a plasma discharge.

[0099] The plasma generating apparatus can apply a high voltage to the electrode 231 via the DC power supply 110 to generate a capacitive coupling discharge between the electrode 231 and a surrounding object (e.g., a metal object located inside / outside the discharge tube). The plasma generating apparatus can apply a high voltage to the electrode 231 via the DC power supply 110 to generate a capacitive coupling discharge between the electrode 231 and the gas tube 211, which is located in the discharge tube and grounded, and the electrode 231. The plasma generating apparatus can generate a discharge between the gas tube 211 and the electrode 231 to provide a seed charge. That is, the gas tube 211 can serve as a counter electrode. However, this is merely an example, and another grounded conductor located around or inside the discharge tube can also serve as the counter electrode.

[0100] 6(b), the plasma generating device may include an electrode 231 located on the outer surface of the discharge tube and above the induction coil 221 of the antenna module 220. The electrode 231 may be in the form of a square plate. The plasma generating device may apply a positive high voltage to the square plate-shaped electrode 231 located on the outer surface of the discharge tube via a DC power source to induce a discharge between the gas tube 211, which is located within the discharge tube and grounded, and the electrode 231. When a high voltage pulse is applied to the electrode 231 by the DC power source, a capacitively coupled plasma discharge, for example, a streamer discharge, may occur between the electrode 231 and the gas tube 211.

[0101] Fig. 7(a) is a diagram for explaining a power supply according to one embodiment. Fig. 7(b) is a diagram for explaining one embodiment of the high-voltage pulse generator explained in Fig. 7(a). In the power supply and high-voltage pulse generator in Fig. 7(a) and (b), the contents explained in Fig. 5 can be similarly applied unless otherwise specified.

[0102] 7(b), the high voltage pulse generator 113 according to an embodiment may include a transformer 113e including a primary coil for receiving a DC voltage from an AC-DC converter and a secondary coil for generating a positive DC high voltage pulse, and a transistor 113f connected to the primary coil of the transformer 113e. The control unit 112 may control the gate of the transistor 113f. One end of the secondary coil of the transformer 113e may be grounded, and the other end of the secondary coil of the transformer 113e may output a positive DC high voltage pulse Vout.

[0103] 1.2.3 RF Power and Antenna Module The plasma generating device may include one or more induction electrodes that generate a discharge inside the discharge tube. The plasma generating device may include one or more antenna modules that generate an inductively coupled plasma discharge when power is supplied from an RF power source. The antenna modules may operate differently depending on their configuration and the frequency of the input power signal. The following describes several embodiments of the antenna modules.

[0104] 1.2.3.1 Type 1 Antenna Module 8 is a diagram illustrating the configuration of an antenna module according to an embodiment. Referring to FIG 8, an antenna module 223 according to an embodiment may include a first capacitor 223a, an induction coil 223b, and a second capacitor 223c.

[0105] The first capacitor 223a may be connected between one end of the induction coil 223b and the RF power source, and the second capacitor 223c may be connected between the other end of the induction coil 223b and the RF power source. The first capacitor 223a and the second capacitor 223c may have the same storage capacity.

[0106] The induction coil 223b may be located between the first capacitor 223a and the second capacitor 223c. The induction coil 223b may be a solenoid coil having a multi-layer structure. The induction coil 223b may be a solenoid coil wound in multiple layers around the outer surface of the discharge tube. The unit turns constituting the induction coil 223b may be wound to form a reinforcing and interfering magnetic field within the discharge tube in response to an AC power source. The induction coil 223b may be a solenoid coil wound in one direction multiple times around the outer surface of the discharge tube.

[0107] The induction coil 223b may be a tightly wound solenoid coil to maximize the number of turns per unit length of the discharge tube. Although simply shown in Figure 5, the induction coil 223b may be a solenoid coil having a greater number of turns than that shown in Figure 8. For example, the induction coil 223b may be a three-layer structure including an inner solenoid coil, a middle solenoid coil, and an outer solenoid coil connected together.

[0108] The induction coil 223b may have a pipe shape through which a refrigerant can flow. The induction coil 223b may be prepared as a copper pipe. The cross section of the induction coil 223b may be prepared as a circle or a square.

[0109] The first capacitor 223a, the induction coil 223b, and the second capacitor 223c are connected in series and can resonate at a first frequency. The first frequency can be determined by the capacitance C1 of each of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b.

[0110] FIG. 9 is a diagram for explaining the operation of the antenna module illustrated in FIG. 8 at the resonant frequency.

[0111] 9, the antenna module may resonate at a first frequency determined by the capacitance C1 of each of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b. When power is supplied at the first frequency, the first capacitor 223a and the second capacitor 223c may induce a voltage drop opposite to that of the induction coil 223b such that the magnitude of the voltage Va induced across the induction coil 223b is minimized.

[0112] In a resonant state, the first capacitor 223a and the second capacitor 223c can cancel the reactance of the induction coil 223b. The plasma generating device can perform impedance matching by supplying power to the antenna module at a first frequency that causes the reactance of the induction coil 223b to be cancelled by the first capacitor 223a and the second capacitor 223c. The first capacitor 223a and the second capacitor 223c can be arranged symmetrically with respect to the induction coil 223b to reduce the voltage applied across the induction coil 223b.

[0113] 1.2.3.2 Type 2 Antenna Module Figure 10 is an operation for explaining the configuration of an antenna module according to some embodiments. Figure 10 (a), (b) and (c) are diagrams for explaining antenna modules prepared so that the number of turns of the induction coil per unit length of the discharge tube is different. The antenna modules shown in Figure 10 (a), (b) and (c) can each exhibit different discharge characteristics.

[0114] The plasma generating device can exhibit characteristics of less energy loss and narrower discharge window as the number of turns per unit length of the discharge tube of the induction coil constituting the antenna module is smaller, whereas the plasma generating device can exhibit characteristics of wider discharge window and more advantageous for maintaining discharge as the number of turns per unit length of the discharge tube of the induction coil constituting the antenna module is larger, but higher energy loss.

[0115] Referring to Fig. 10(a), the antenna module 235 can include a unit coil 235b wound with one turn per layer, and an interlayer capacitor 235a connecting the unit coils of each layer. The 12*1 turn antenna module 235 shown in Fig. 10(a) can be configured so that all antenna unit turns are in close contact with the outer surface of the discharge tube. The antenna module 235 shown in Fig. 10(a) has a small number of turns per unit length (N / L), which can have a relatively low discharge efficiency, less energy loss, and a relatively high process performance.

[0116] Referring to FIG. 10(b), the antenna module 237 may include unit coils 237b wound with two turns per layer, and interlayer capacitors 237a connecting the unit coils of each layer. The 6*2 turn antenna module 237 shown in FIG. 10(b) has a larger number of turns per unit length (N / L) than the antenna module 235 shown in FIG. 10(a). The antenna module 237 shown in FIG. 10(b) may exhibit higher discharge efficiency than the antenna module 235 shown in FIG. 10(a). The discharge efficiency may be proportional to the number of turns per unit length (N / L). For example, the antenna module 237 shown in FIG. 10(b) may have twice the discharge efficiency of the antenna module 235 shown in FIG. 10(a).

[0117] 10(c), the antenna module 239 may include unit coils 239b wound with 3 turns per layer, and interlayer capacitors 239a connecting the unit coils of each layer. The antenna module 239 has a larger number of turns per unit length (N / L) than the antenna modules 235 and 237 of FIGs. 10(a) and (b), and may have a higher discharge efficiency than the antenna modules 235 and 237 of FIGs. 10(a) and (b). The antenna module 239 may have a characteristic that makes it easier to maintain discharge under gas conditions that are difficult to discharge, compared to the antenna modules 235 and 237 of FIGs. 10(a) and (b).

[0118] The antenna modules shown in Figures 10(a), (b) and (c) may have different inductances. The antenna module 235 in (a) may have a first inductance, the antenna module 237 in (b) may have a second inductance and the antenna module 239 in (c) may have a third inductance. The second inductance may be greater than the first inductance and the third inductance may be greater than the second inductance.

[0119] Fig. 11 is a diagram for explaining the operation at the resonant frequency of the antenna module illustrated in Fig. 11. In the following, voltage distribution at the resonant frequency of the antenna module illustrated in (c) of Fig. 11 will be described with reference to Fig. 11.

[0120] Referring to FIG. 11, an antenna module according to one embodiment may include a plurality of unit coils 239b, interlayer capacitors 239a arranged between the plurality of unit coils, and terminal capacitors 239c (not shown) respectively connected to the unit coils located at the upper and lower ends.

[0121] The antenna module can resonate at a second frequency determined by the capacitance of the interlayer capacitor 239a, the inductance of the unit coil 239b, and the capacitance of the end capacitor 239c.

[0122] In order to minimize the voltage applied to the unit coil 239b, the capacitance of the end capacitor 239c can be determined to be twice the capacitance of the interlayer capacitor 239a. In this case, the antenna module can resonate at a second frequency determined by the capacitance C2 of the interlayer capacitor 239a, the inductance L2 of the unit coil 239b, and the capacitance 2*C2 of the end capacitor 239c. Referring to Fig. 11, the interlayer capacitor 239a can be represented as a pair of virtual capacitors connected in series, each having a capacitance of 2*C2.

[0123] In a resonant state, the interlayer capacitors 239a and the terminal capacitors 239c can reduce the voltage applied to the terminals of the unit coils 239b. When power is provided to the antenna module at the second frequency, the interlayer capacitors 239a and the terminal capacitors 239c can induce a voltage drop inverse to the induction coil 239b such that the magnitude of the voltage Vb induced across the induction coil 239b is minimized.

[0124] The interlayer capacitor 239a and the end capacitor 239c can cancel the reactance of the induction coil 239b. The plasma generating device can perform impedance matching by supplying power to the antenna module at a second frequency so that the reactance of the induction coil 239b is canceled by the interlayer capacitor 239a and the end capacitor 239c. The end capacitor 239c can be arranged symmetrically with respect to the induction coil 239b to reduce the voltage applied to both ends of the induction coil 239b. The interlayer capacitor 239a can be arranged between each layer of the induction coil 239b to minimize the interlayer voltage difference between the unit induction coils 239b and prevent capacitive coupling.

[0125] As the reactance of the induction coil 239b is cancelled by the interlayer capacitor 239a and / or the end capacitor 239c, the voltages in the unit coils 239b may have a corresponding relationship. For example, in a resonant state, the voltage between one end and the other end of one unit coil 239b may correspond to the voltage between one end and the other end of the other unit coil 239b. The potential at one end of one unit coil 239b may correspond to the potential at one end of the other unit coil 239b.

[0126] As a specific example, the antenna module may include a first unit coil (or unit turn) having one end and the other end, a first interlayer capacitor connected in series with the other end of the first unit coil, and a second unit coil having one end and the other end, the one end of which is connected in series with the first interlayer capacitor. When the antenna module is in a resonant state, a potential at one end of the first unit coil may correspond to a potential at one end of the second unit coil. When the antenna module is in a resonant state, a voltage between one end and the other end of the first unit coil may correspond to a potential between one end and the other end of the second unit coil. When the antenna module is in a resonant state, a voltage between one end and the other end of the first unit coil may correspond to a voltage between one end of the first unit coil and the other end of the second unit coil.

[0127] Fig. 12 is a diagram for explaining the structure of the antenna module illustrated in Fig. 11(c). The antenna module according to one embodiment may include a plurality of unit coils 239b and an interlayer capacitor 239c disposed between the plurality of unit coils. Fig. 12 shows a unit coil 239b of the antenna module according to one embodiment.

[0128] The unit coil 239b may include a plurality of turns TU1, TU2, and TU3. The unit coil 239b may include a first end TE1, a first turn TU1 connected to the first end TE1, a first protruding portion PR1 connected to the first turn TU1, a second turn TU2 connected to the first protruding portion PR1, a second protruding portion PR2 connected to the second turn TU2, a third turn TU3 connected to the second protruding portion PR2, and a second end TE2 connected to the third turn TU3.

[0129] The unit coil 239b may have an open portion that is open in one direction (the x-axis direction in reference to FIG. 12). The first end TE1 and the second end TE2 of the unit coil 239b may form an open portion that is open in one direction.

[0130] Each turn TU1, TU2, TU3 may be arranged on the same plane. Each turn TU1, TU2, TU3 may have a predetermined central angle. The central angle of each turn may be 270 degrees or more. Each turn TU1, TU2, TU3 may be arranged to have the same central axis and may have different radii from each other.

[0131] Each of the protrusions PR1, PR2 may be provided in a U-shape, connecting turns of different radii. The first protrusion PR1 may connect one end of the first turn TU1 to one end of the second turn TU2.

[0132] The first end TE1 or the second end TE2 can be connected to the interlayer capacitor 239c or the end capacitor 239a. For example, the first end TE1 can be connected to the end capacitor 239a, and the second end TE2 can be connected to the interlayer capacitor 239c.

[0133] Meanwhile, the antenna module may include a plurality of unit coils 239b. The plurality of unit coils may be arranged in a rotational manner with respect to the central axis of the discharge tube. For example, a first unit coil may be arranged with a protruding portion PR facing a first direction with respect to the central axis of the discharge tube, and a second unit coil may be arranged with a protruding portion PR facing a second direction with respect to the central axis of the discharge tube, and the first direction and the second direction may form a predetermined angle with respect to the central axis of the discharge tube. For example, the predetermined angle may be 90 degrees.

[0134] 13 is a block diagram illustrating an RF power supply according to an embodiment. Referring to FIG. 13, an RF power supply device 1000 according to an embodiment may include an AC power supply 1100, a power supply device 1200, and a load 1400.

[0135] The AC power source 1100 may be a conventional 60 Hz power source used in a home or industrial setting. The load 1400 may be an electrical or electronic device used in a home or industrial setting. The load 1400 may be a plasma generating device as described herein.

[0136] The power supply device 1200 can convert the first AC power source into a second AC power source and supply it to the load 1400. For example, the second AC power source has a driving frequency of several hundred kHz to several tens of MHz and can provide power of several kW or more. The power supply device 1200 can include a rectifier 1210, a capacitor 1220, an inverter 1230, an impedance matching circuit 1300, and a controller 1250.

[0137] The rectifier 1210 can convert the output of the AC power supply 1100 into a DC power supply. The rectifier 1210 can supply the DC power supply between a ground node GND and a power supply node VP. The capacitor 1220 may be connected between the power supply node VP and the ground node GND. The capacitor 1220 can discharge the AC component transmitted to the power supply node VP to the ground node GND.

[0138] The inverter 1230 may receive DC power from a power supply node VP and a ground node GND. The inverter 1230 may receive a switching signal SW from the controller 1250. The inverter 1230 may convert the DC power into a second AC power in response to the switching signal SW. The second AC power may be supplied to the load 1400 via an impedance matching circuit 1300. The impedance matching circuit 1300 may provide impedance matching to the impedance of the load 1400.

[0139] The controller 1250 may transmit a switching signal SW to the inverter 1230. The controller 1250 may control the switching signal SW so that the inverter 1230 converts the DC power source into a second AC power source. The controller 1250 may control the switching signal SW so as to adjust the amount of power supplied from the inverter 1230 to the load 1400.

[0140] 1.3 Plasma discharge operation According to one embodiment, a method for generating a plasma discharge can be provided.

[0141] A method for generating a plasma discharge according to an embodiment may include providing a seed charge and generating a plasma discharge. The method for generating a plasma discharge may include applying a high voltage pulse to a DC electrode via a DC power supply to form a seed charge in a discharge tube. The method for generating a plasma discharge may include applying an RF voltage to an antenna module via an RF power supply to induce a plasma discharge in the discharge tube.

[0142] Hereinafter, the operation of the plasma discharge device or the method of performing plasma discharge will be described with reference to Fig. 14. In the following, for convenience, the description will be given based on a DC electrode in the case where there is one electrode, but this is not essential, and the plasma discharge device may further include a counter electrode.

[0143] FIG. 14 is a diagram for explaining the operation of the plasma discharge device according to one embodiment of the plasma discharge device described in this specification.

[0144] 14(a), the method of generating plasma discharge may include a plasma discharge device applying a high voltage to a DC electrode 231 via a DC power supply 101. The method of generating plasma discharge may include applying a high voltage to the DC electrode 231 via the DC power supply 101 to form a first electric field E1. The first electric field E1 may be formed between the electrode 231 and the gas tube 211.

[0145] The method of generating plasma discharge may include the plasma discharge device applying a high voltage to the DC electrode 231 via the DC power supply 101 to form a seed charge in the discharge tube. The method of generating plasma discharge may generate a seed charge by applying a high voltage to the DC electrode 231 to form a high density electric field between the DC electrode 231 and the gas tube 211 and inducing charge crowding.

[0146] Referring to FIG. 14( b ), a method of generating a plasma discharge may include applying an RF voltage to the antenna module 220 via the RF power supply 102 .

[0147] The method of generating a plasma discharge may include applying an RF voltage to the antenna module 220 via the RF power supply 102 to form a second electric field E2 within the discharge tube. The method of generating a plasma discharge may include applying an RF voltage to the antenna module 220 via the RF power supply 102 to form a second electric field E2 to generate a seed charge and / or plasma. The method of generating a plasma discharge may include forming the second electric field E2 to generate a capacitively coupled plasma.

[0148] The second electric field E2 may be formed aligned with the axis of the discharge tube. The second electric field E2 may be formed aligned with the length of the induction coil of the antenna module 220.

[0149] The method of generating a plasma discharge may include applying an RF voltage to the antenna module 220 via the RF power supply 102 to form a third electric field E3 in the discharge tube. The method of generating a plasma discharge may include forming a third electric field E3 in the discharge tube to generate a plasma in the discharge tube. The method of generating a plasma discharge may include applying an RF voltage to the antenna module 220 via the RF power supply 102 to form a third electric field E3 to generate a seed charge and / or a plasma.

[0150] The third electric field E3 may be formed in a direction parallel to the induction coil of the antenna module, or in a circumferential direction of the discharge tube.

[0151] 2. Ignition assistance implementation As described above, when the initial discharge (ignition) of plasma is performed by supplying a seed charge by applying a DC voltage, there is an advantage that plasma generation can be performed more easily.

[0152] However, the supply of seed charges by application of a DC voltage is based on a charge group due to the formation of a storage electric field, which may cause damage to the device in some cases. For example, the electric field formed by the DC voltage is directed toward the inner wall of the gas tube or other structures, so that particles or electrons accelerated by the electric field can collide with the inner wall of the gas tube or other structures. Such unintended collisions may cause damage to the inner wall of the gas tube or other structures and the generation of impurities such as particles. Damage to the device may lead to deterioration of the device, adversely affecting the life of the device, and the generation of impurities may act as a factor that reduces the quality of the active species generated by the device.

[0153] However, depending on the type of gas, the formation of an induction electric field (or a stored electric field) via an RF power supply and an antenna module alone may not be sufficient to create an environment for the initial discharge of plasma. On the other hand, under certain discharge conditions, the initial discharge of plasma can be smoothly generated by the induction electric field (or the stored electric field) via an RF power supply and an antenna module alone, without the application of a DC voltage via a DC power supply.

[0154] Therefore, there is a need for a method for assisting the initial discharge of plasma while minimizing damage to the device and generation of particles by appropriately changing whether or not a DC voltage is applied, the strength of a DC high voltage pulse, or the strength of an RF voltage depending on the plasma discharge state.

[0155] In the following, a plasma generating device and / or a method for controlling the plasma generating device that controls the output of a DC high voltage pulse and / or AC power to assist plasma generation will be described in several embodiments. In the following, a plasma device and / or a method for controlling the plasma device that applies a DC voltage and / or an RF voltage stepwise based on a change in the state of the plasma in order to achieve the above object will be described.

[0156] The control method of the plasma generating device described herein can be performed by the plasma generating device or a controller built into the plasma generating device. The plasma generating device can execute the control method of the plasma generating device described herein or can include a controller that executes such a method.

[0157] Furthermore, it will be obvious to those skilled in the art that the embodiments of the plasma generation device described in this specification can provide a corresponding method for controlling the plasma generation device, and that the embodiments of the control method for the plasma generation device provided in this specification can provide a corresponding plasma generation device.

[0158] 2.1 Equipment FIG. 15 is a diagram for explaining a plasma generating apparatus according to an embodiment.

[0159] Referring to FIG. 15, a plasma generating device 2000 according to one embodiment may include a chamber 2010 providing a plasma generation space, an antenna module 2030 located around the chamber 2010 and supplied with power from a first power source P1, an electrode 2050 located around the chamber 2010 and supplied with power from a second power source P2, a sensor 2070, and a controller 2090 controlling the first power source P1 and the second power source P2.

[0160] An antenna module 2030 is disposed around the periphery of the chamber and connected to a first power source and capable of generating an induced electric field within the chamber, and an electrode 2050 is disposed around the periphery of the chamber and connected to a second power source and capable of assisting in generating the plasma.

[0161] The sensor 2070 may obtain sensing information regarding the state of the plasma. The sensor 2070 may obtain power, current, or voltage at a location of the plasma generating device. For example, the sensor 2070 may obtain the sensing information indicative of power supplied to a load by the first power source. The sensor 2070 may obtain sensing information indicative of a current flowing through the load and / or a voltage applied to the load by the first power source.

[0162] The controller 2090 may provide AC power (or AC voltage or RF power) to the antenna module 2030 via the first power source P1. The controller 2090 may generate a switching signal for controlling an inverter of the first power source P1 and transmit the switching signal to the first power source P1 to control the output of the first power source P1.

[0163] The controller 2090 can apply a high voltage pulse to the electrode 2050 via the second power supply P2. The controller 2090 can generate a pulse control signal for controlling a pulse generator of the second power supply P2 and transmit the signal to the second power supply P2 to control the output of the second power supply P2.

[0164] The controller 2090 can acquire sensing information regarding the state of the plasma via the sensor 2070. The controller 2090 can acquire the sensing information via the sensor 2070 and change the operating state of the first power source P1 and / or the second power source P2 based on the acquired sensing information.

[0165] According to one embodiment, the controller 2090 can apply the high voltage pulse at a first voltage to the electrode via the second power source if the sensing information at the second time point does not satisfy the predetermined condition, and can apply the high voltage pulse at a second voltage greater than the first voltage to the electrode via the second power source if the sensing information at a third time point after the second time point does not satisfy the predetermined condition.

[0166] According to another embodiment, the controller 2090 can apply the high voltage pulse to the electrode at a first period if the sensing information does not satisfy the predetermined condition at the second time point, and can apply the high voltage pulse to the electrode at a second period that is shorter than the first period if the sensing information does not satisfy the predetermined condition at a third time point that is one hour after the second time point.

[0167] According to another embodiment, the controller 2090 may apply the RF voltage to the load at a first magnitude from the first time point, and if the sensing information does not satisfy the specified condition at a third time point that is after the first time point and before the second time point, may apply the RF voltage to the load at a second magnitude greater than the first magnitude.

[0168] On the other hand, the controller 2090 can apply the high voltage pulse at a first voltage to the electrode via the second power source if the sensing information does not satisfy the predetermined condition at the second time point, and can interrupt the application of the high voltage pulse if the sensing information satisfies the predetermined condition at a third time point that is later than the second time point.

[0169] 2.2 Control method FIG. 16 is a diagram for explaining a method for controlling a plasma generating apparatus according to an embodiment.

[0170] Referring to FIG. 16, a method for controlling a plasma generating apparatus according to one embodiment may include a step S110 of applying an RF voltage to a load, a step S130 of acquiring sensing information regarding the state of the plasma, and a step S150 of controlling a second power source based on the sensing information.

[0171] According to one embodiment, the plasma generating device 2000 includes a chamber 2010 providing a plasma generation space, an antenna module 2030 located around the chamber 2010 and receiving power from a first power source P1, an electrode 2050 located around the chamber 2010 and receiving power from a second power source P2, a sensor 2070, and a controller 2090 controlling the first power source P1 and the second power source P2. A method for controlling the plasma generating device 2000 can be provided.

[0172] The step S110 of applying an RF voltage to a load may include the controller 2090 applying an RF voltage to a load including the antenna module via the first power source P1 from a first time point.

[0173] The step S130 of acquiring sensing information regarding the state of the plasma may include a controller 2090 acquiring the sensing information regarding the state of the plasma due to the RF voltage.

[0174] The step S150 of controlling the second power source P2 based on the sensing information may include the controller 2090 controlling the second power source P2 based on the sensing information from a second time point that is a predetermined time after the first time point.

[0175] Step S150 in which the controller 2090 controls the second power source P2 may include the controller 2090 operating according to the predetermined conditions, which are prepared so that if the sensing information indicates that the plasma has not been generated in the chamber, the controller 2090 applies the pulse to the electrode 2050 via the second power source P2, and if the sensing information indicates that the plasma has been generated in the chamber, the controller 2090 does not apply the pulse to the electrode 2050.

[0176] According to an embodiment, the step S150 in which the controller 2090 controls the second power source P2 may include the controller 2090 not applying a high voltage pulse to the electrode 2050 via the second power source P2 if the sensing information at the second time point satisfies a predetermined condition, and applying the high voltage pulse to the electrode 2050 via the second power source P2 if the sensing information at the second time point does not satisfy the predetermined condition. This will be described in more detail in Example 1 below.

[0177] The controller 2090 may obtain sensing information regarding the power supplied from the first power source P1 to the load through the sensor 2070. In this case, the controller 2090 may control the second power source P2 to include applying the pulse voltage to the electrode 2050 when the sensing information at the second time point indicates that the power supplied to the load is equal to or less than a reference power, and not applying the pulse voltage to the electrode 2050 when the sensing information at the second time point indicates that the power supplied to the load is equal to or more than a reference power.

[0178] According to an embodiment, the first power source P1 includes a DC power source and an inverter that converts the DC power source into RF power, and the sensor 2070 is located between the DC power source and the inverter of the first power source P1 and can obtain a first voltage output by the DC power source and a first current output from the DC power source. In this case, the controller 2090 controlling the second power source P2 may include the controller 2090 controlling the second power source P2 based on the power supplied to the load determined based on the first voltage and the first current.

[0179] According to an embodiment, the sensor 2070 may obtain sensing information related to a second current flowing through the antenna module 2030. The controller 2090 controlling the second power source P2 may include the controller obtaining the sensing information, and applying the pulse voltage to the electrode if a phase difference between the second current and the RF voltage at the second time point does not satisfy the predetermined condition, and not applying the pulse voltage to the electrode if a phase difference between the second current and the RF voltage at the second time point satisfies the predetermined condition.

[0180] The method of controlling a plasma generating apparatus may include applying a unit pulse of increased voltage to the electrode if plasma is not generated in response to applying a unit pulse to the electrode.

[0181] According to one embodiment, the step of the controller 2090 controlling the second power source may further include a step in which the controller applies the high voltage pulse at a first voltage to the electrode via the second power source if the sensing information at the second time point does not satisfy the predetermined condition, and does not apply the high voltage pulse to the electrode if the sensing information satisfies the predetermined condition, and a step in which the controller applies the high voltage pulse at a second voltage greater than the first voltage to the electrode via the second power source if the sensing information at a third time point after the second time point does not satisfy the predetermined condition.

[0182] The method of controlling the plasma generating device may further include interrupting the operation of the second power supply when a plasma discharge occurs, i.e., when sensing information related to the plasma discharge is obtained.

[0183] According to one embodiment, the step of the controller 2090 controlling the second power source may include a step of the controller 2090 applying the high voltage pulse at a first voltage to the electrode via the second power source if the sensing information at the second time point does not satisfy the predetermined condition, and a step of the controller 2090 interrupting the application of the high voltage pulse if the sensing information at a third time point after the second time point satisfies the predetermined condition.

[0184] The method of controlling a plasma generating apparatus may include applying unit pulses to the electrodes at reduced time intervals if plasma is not generated in response to applying unit pulses to the electrodes.

[0185] According to one embodiment, the controller controlling the second power source may further include applying the high voltage pulse to the electrode at a first period if the sensing information does not satisfy the predetermined condition at the second time point, and applying the high voltage pulse to the electrode at a second period smaller than the first period if the sensing information does not satisfy the predetermined condition at a third time point, which is one hour after the second time point.

[0186] Meanwhile, in the above embodiment, the control method of the plasma generating apparatus is described with reference to the case where the control method includes the step S150 of controlling the second power source P2 based on the sensing information, but the contents of the invention described in this specification are not limited to this. For example, the control method of the plasma generating apparatus may include the step of controlling the first power source P1 based on the sensing information.

[0187] A method of controlling a plasma generating apparatus according to one embodiment may include applying an RF voltage to an antenna module at an increased amplitude if plasma is not generated in response to applying a unit pulse to an electrode.

[0188] According to one embodiment, the controller applying the RF voltage to the load via the first power source may further include applying the RF voltage to the load at a first magnitude from the first time point, and applying the RF voltage to the load at a second magnitude greater than the first magnitude if the sensing information does not satisfy the predetermined condition at a third time point that is after the first time point and before the second time point.

[0189] 2.3 DC High Voltage Application Modulation According to an embodiment, the plasma generating apparatus may determine whether to apply a DC high voltage pulse based on a predetermined condition. The plasma generating apparatus may determine whether to apply a DC high voltage pulse depending on the state of the plasma. The plasma generating apparatus may determine whether to apply a DC high voltage pulse depending on whether plasma ignition (or generation) is performed.

[0190] As a specific example, the method of controlling the plasma generating device may include applying an RF voltage to the antenna module to induce an initial discharge, and if the initial discharge (or ignition) does not occur within a predetermined time, applying a high voltage pulse to the electrode to assist the initial discharge. As illustrated, the plasma generating device applies an RF voltage preferentially to the antenna module, and applies a high voltage pulse to the electrode only when the initial discharge does not occur, thereby suppressing damage to the device or generation of fine particles due to the high voltage pulse.

[0191] As another specific example, the plasma generating apparatus may determine whether a predetermined condition for plasma generation is satisfied after applying a unit high voltage pulse to an electrode at least once, and may change the output state of the high voltage pulse if the condition is not satisfied (i.e., plasma is not generated). For example, the plasma generating apparatus or its controller may apply an RF voltage to the antenna module via a first power source from a first time point, and if the sensing information does not satisfy the predetermined condition at a second time point after the first time point (or from the second time point onward), may apply the high voltage pulse to the electrode via the second power source to output a first power, and if the sensing information does not satisfy the predetermined condition at a third time point after the second time point, may apply the high voltage pulse to the electrode via the second power source to output a second power that is greater than the first power. The plasma generating apparatus may apply the high voltage pulse to the electrode to output the second power that is greater than the first power by increasing the voltage of the high voltage pulse or increasing the number of high voltage pulses.

[0192] 2.3.1 Example 1 According to one embodiment, a plasma generating device can be provided that applies an RF voltage to an antenna module to obtain sensing information on a plasma state, and applies a high voltage pulse to an electrode if the sensing information does not satisfy a predetermined condition within a predetermined time. According to one embodiment, a method of controlling a plasma generating device can include applying a high voltage pulse to an electrode if plasma generation is not detected.

[0193] The plasma generating device or its controller can apply an RF voltage to a load including the antenna module via the first power supply from a first time point, acquire the sensing information regarding the state of the plasma due to the RF voltage, and control the second power supply based on the sensing information from a second time point that is a predetermined time after the first time point.

[0194] The plasma generation device or its controller can acquire sensing information after the first time point. The plasma generation device or its controller can acquire sensing information on a plasma state reflecting a change due to an RF voltage applied after the first time point after the first time point after the first time point. The plasma generation device or its controller can control the second power supply based on the sensing information acquired after a second time point that is a predetermined time after the first time point. The plasma generation device or its controller can control the second power supply based on the sensing information acquired after the second time point.

[0195] If the sensing information does not satisfy the specified condition at the second time point, the plasma generating device or its controller applies a pulse voltage to the electrode via the second power source, but if the sensing information satisfies the specified condition at the second time point, the plasma generating device or its controller may not apply the pulse voltage to the electrode via the second power source.

[0196] The plasma generating device or its controller may operate according to the predetermined condition, wherein the controller applies the pulse to the electrode via the second power source when the sensing information indicates that the plasma has not been generated in the chamber, but does not apply the pulse to the electrode when the sensing information indicates that the plasma has been generated in the chamber.

[0197] The plasma generating device or its controller applies the pulse voltage to the electrode when the sensing information at the second time indicates that the power supplied to the load is equal to or less than a reference power, but may not apply the pulse voltage to the electrode when the sensing information at the second time indicates that the power supplied to the load is equal to or greater than a reference power.

[0198] According to one embodiment, the first power source may include a DC power source and an inverter that converts the DC power source into RF power. A sensor is disposed between the DC power source and the inverter of the first power source and may acquire a first voltage output by the DC power source and a first current output from the DC power source.

[0199] A controller can apply the pulsed voltage to the electrodes based on a power delivered to the load determined based on the first voltage and the first current.

[0200] For example, the plasma generating apparatus may acquire a power value supplied from the first power source to the load via a sensor, and control the second power source based on whether the acquired power value exceeds a predetermined condition value. If the acquired power value does not exceed the predetermined condition value, the plasma generating apparatus may apply a high voltage pulse to the electrode via the second power source, but if the acquired power value exceeds the predetermined condition value, the plasma generating apparatus may not apply a high voltage pulse to the electrode via the second power source. Alternatively, the plasma generating apparatus may control the second power source based on whether the acquired power value exceeds a predetermined ratio.

[0201] According to another embodiment, the sensor may obtain the sensing information based on a second current flowing through the antenna module.

[0202] A controller acquires the sensing information, and if the phase difference between the second current and the RF voltage at the second time point does not satisfy the specified condition, applies the pulse voltage to the electrode, but if the phase difference between the second current and the RF voltage at the second time point satisfies the specified condition, the controller does not need to apply the pulse voltage to the electrode.

[0203] For example, the plasma generating device can acquire phase information of the current flowing through the antenna module via a sensor, acquire phase information of the voltage applied to the antenna module from a switching signal generated by the controller, and determine whether or not a specified condition is satisfied based on the phase information of the current flowing through the antenna module and the phase information of the voltage applied to the antenna module.

[0204] FIG. 17 is a diagram for explaining a method for controlling a plasma generating apparatus according to an embodiment.

[0205] Referring to FIG. 17, a method for controlling a plasma generating apparatus according to one embodiment may include step S110 of applying an RF voltage to a load, step S130 of acquiring sensing information regarding a state of the plasma, step S151 of determining whether the sensing information satisfies a predetermined condition, and step S152 of applying a high voltage pulse to an electrode if the sensing information does not satisfy the predetermined condition.

[0206] The method for controlling the plasma generating apparatus may include applying an RF voltage to the antenna module, acquiring sensing information via a sensor at regular time intervals, and changing an operation state of the second power supply including a pulse generator based on the sensing information. For example, the method for controlling the plasma generating apparatus may include applying an RF voltage to the antenna module, acquiring sensing information via a sensor at regular time intervals, and changing an operation state of the second power supply including a pulse generator based on the sensing information.

[0207] Fig. 18 is a diagram for explaining the output of the output current and the high voltage pulse by the control method of the plasma generation device 2000 according to one embodiment. The output of the output current and the high voltage pulse explained in Fig. 18 will be explained below with reference to Fig. 15.

[0208] FIG. 18(a) shows the output current i flowing through the antenna module (or load) by the control method of the plasma generation device 2000 according to one embodiment. RF 1 is a diagram showing the output current iRF may be a current flowing through a load or an antenna module when the plasma generating device 2000 drives the AC power supply of the first power supply P1. RF can be an AC current measured at the antenna module (or load) when the plasma generating device applies an AC voltage to the antenna module via an AC power supply.

[0209] The control method of the plasma generation device 2000 according to the embodiment may include applying an AC voltage to the antenna module 2030 via a first power source P1. Referring to (a) and (b) of FIG. 18, the control method of the plasma generation device 2000 may include applying an AC voltage to the antenna module 2030 from a first time point t1. The control method of the plasma generation device 2000 applies an AC voltage to the antenna module 2030 via the first power source P1 from the first time point, and controls an output current i flowing through the antenna module 2030. RF The method may include obtaining a

[0210] The control method of the plasma generation device 2000 according to the embodiment includes applying a high voltage pulse to the electrode 2050 via the second power supply P2. FIG. 18(b) shows the high voltage pulse V ig 18(b), the control method for the plasma generating device 2000 can include applying a high voltage pulse to the electrode 2050 at a constant period via the second power source P2. The control method for the plasma generating device 2000 can include applying a high voltage pulse to the electrode 2050 at a constant period (first time interval PT1 in the following example) from the second time point t2 onwards until plasma generation is detected.

[0211] 18(b), the control method of the plasma generating device 2000 according to an embodiment can include applying a high voltage pulse to the electrode 2050 from a second time point t2 after a predetermined time interval PT from the first time point t1. The control method of the plasma generating device 2000 can include applying a first unit pulse UP1 to the electrode 2050 at the second time point t2 (or at least after the second time point t2).

[0212] The control method of the plasma generating device 2000 may include obtaining information indicating whether or not plasma is generated through a separate power sensor, a current sensor, or a voltage sensor, and controlling the second power source P2 based on the obtained information. The control method of the plasma generating device 2000 may include determining whether or not a high voltage pulse is applied based on the information obtained through the sensor 2070.

[0213] The control method of the plasma generating device 2000 may include applying a first unit pulse UP1 to the electrode 2050 at least from the second time point t2 onwards, if no plasma is generated in the chamber 2010 at the second time point t2 in response to applying an AC voltage to the antenna module 2030 via a first power source P1 from the first time point t1.

[0214] The control method of the plasma generating device 2000 may include applying a first unit pulse UP1 to the electrode 2050 at a second point in time t2, and applying a second unit pulse UP2 to the electrode 2050 after a first time interval PT1 from the second point in time t2.

[0215] The control method of the plasma generating device 2000 may include, if no plasma is generated after applying the first unit pulse UP1 to the electrode 2050 at the second time point t2, applying the second unit pulse UP2 to the electrode 2050 after the first time interval PT1 from the second time point t2. The control method of the plasma generating device 2000 may include, if no plasma discharge is generated in response to the application of the first unit pulse UP1, applying the second unit pulse UP2 to the electrode 2050 after the first time interval PT1 from the second time point t2.

[0216] The control method of the plasma generating device 2000 may include applying a second unit pulse UP2, and applying a third unit pulse UP3 to the electrode 2050 after a first time interval PT1 from when the second unit pulse UP2 is applied.

[0217] The control method of the plasma generating device 2000 may include interrupting the application of the high voltage pulse. The control method of the plasma generating device 2000 may include interrupting the application of the high voltage pulse to the electrode 2050 when the generation of plasma in the chamber 2010 is detected. Referring to (b) of FIG. 18, the control method of the plasma generating device 2000 may include applying a third unit pulse UP3 and interrupting the application of the high voltage pulse to the electrode 2050 in response to the generation of plasma in the chamber 2010.

[0218] The control method of the plasma generating device 2000 may include interrupting the application of the high voltage pulse based on a value acquired through a separate power sensor, a current sensor, or a voltage sensor. That is, the control method of the plasma generating device 2000 may include acquiring a measurement value indicating a plasma state through the sensor 2070, and interrupting the application of the high voltage pulse in response to acquiring a measurement value indicating that plasma has been generated.

[0219] 2.3.2 Example 2 According to one embodiment, a plasma generating device can be provided that acquires sensing information on a plasma state, and increases a voltage of a pulse applied to an electrode when the sensing information does not satisfy a predetermined condition. According to one embodiment, a method for controlling a plasma generating device can include increasing a voltage of a pulse applied to an electrode when plasma generation is not detected.

[0220] Fig. 19 is a diagram for explaining a method for controlling a plasma generating apparatus according to an embodiment. The content of Fig. 16 can be similarly applied to the method for controlling a plasma generating apparatus explained in Fig. 19.

[0221] Referring to FIG. 19, a method for controlling a plasma generating apparatus according to one embodiment may include, after step S130 of acquiring sensing information regarding the above-mentioned plasma state, step S161 of determining whether the sensing information satisfies a predetermined condition, step S162 of applying a high voltage pulse to an electrode if the sensing information does not satisfy the predetermined condition, step S163 of acquiring sensing information again after applying the high voltage pulse to the electrode and determining whether the acquired sensing information satisfies the predetermined condition, and step S164 of increasing the voltage of the high voltage pulse.

[0222] The method for controlling the plasma generating device can include periodically acquiring sensing information and judging whether the acquired sensing information satisfies a predetermined condition. The method for controlling the plasma generating device can include periodically judging whether the sensing information satisfies a predetermined condition and, if the sensing information does not satisfy the predetermined condition, increasing a voltage value of a high voltage pulse.

[0223] Referring to FIG. 19, the control method for a plasma generating device may include repeatedly executing step S162 of applying a high voltage pulse to an electrode if the acquired sensing information does not satisfy a predetermined condition, step S163 of acquiring sensing information again after applying the high voltage pulse to the electrode and determining whether the acquired sensing information satisfies the predetermined condition, and step S164 of increasing the voltage of the high voltage pulse.

[0224] FIG. 20 is a diagram for explaining the output of RF current and high voltage pulses by the control method of the plasma generation apparatus according to one embodiment.

[0225] Referring to FIG. 20, a method for controlling a plasma generating apparatus according to one embodiment may include, after step S130 of acquiring sensing information regarding the above-mentioned plasma state, step S165 of determining whether the sensing information satisfies a predetermined condition, step S166 of applying a high voltage pulse at a first voltage to the electrode if the sensing information does not determine the predetermined condition, step S167 of determining whether the sensing information satisfies the predetermined condition, and step S168 of applying a high voltage pulse at a second voltage to the electrode.

[0226] Referring to FIG. 20, the control method of the plasma generating device may include a step S130 of acquiring first sensing information at a first time point, a step S166 of applying a high voltage pulse at a first voltage to an electrode via a second power source if the acquired first sensing information does not satisfy a predetermined condition, a step (not shown) of acquiring second sensing information at a second time point after the first time point, and a step S168 of applying a second high voltage pulse greater than the first voltage to the electrode via the second power source if the acquired second sensing information does not satisfy a predetermined condition.

[0227] 21 is a diagram for explaining the output of an output current and a high voltage pulse by a control method of the plasma generation apparatus 2000 according to an embodiment. In the following, the RF current and the high voltage pulse output from the plasma generation apparatus 2000 according to an embodiment will be described with reference to the plasma generation apparatus 2000 illustrated in FIG.

[0228] FIG. 21(a) shows the output current i flowing through the antenna module (or load) by the control method of the plasma generation device 2000 according to one embodiment. RF The control method of the plasma generating device 2000 according to the embodiment includes applying an AC voltage to the antenna module 2030 via a first power source P1 from a first time point t1. RF Regarding the plasma generating device 2000 that generates an AC voltage or applies an AC voltage to the antenna module 2030 or the operation of the plasma generating device 2000, the contents described in relation to FIG. 18 can be similarly applied.

[0229] 21(b), the method of controlling the plasma generating device 2000 according to the embodiment may include applying a high voltage pulse to the electrode 2050 via the second power source P2. Regarding the high voltage pulse application operation, the contents described in relation to FIG. 18 may be similarly applied unless otherwise stated.

[0230] According to an embodiment, the method of controlling the plasma generating device 2000 may include applying a high voltage pulse to the electrode 2050 at a constant period (first time interval PT1 in the following example) from the second time point t2 until plasma generation is detected. At this time, the intensity of the applied unit high voltage pulse may be changed.

[0231] The control method of the plasma generating device 2000 may include obtaining information indicating whether or not plasma is generated through a separate power sensor, a current sensor, or a voltage sensor, and controlling the second power source P2 based on the obtained information. The control method of the plasma generating device 2000 may include determining whether or not to apply a high voltage pulse based on the information obtained through the sensor 2070.

[0232] 21(b), the control method of the plasma generating device 2000 can include applying a first unit pulse UP1 to the electrode 2050 at a second time t2 that is a predetermined time PT or later from the first time t1 (or at least after the second time t2). The control method of the plasma generating device 2000 can include applying the first unit pulse UP1 to the electrode 2050 at least after the second time t2 when plasma is not generated in the chamber 2010 at the second time t2 in response to applying an AC voltage to the antenna module 2030 via the first power source P1 from the first time t1.

[0233] The control method of the plasma generating device 2000 may include applying a second unit pulse UP2 to the electrode 2050 after a first time interval PT1 from the second time point t2. The second unit pulse UP2 may have a value greater than the first unit pulse UP1. The control method of the plasma generating device 2000 may include applying the second unit pulse UP2 with a voltage greater than the first unit pulse UP1 to the electrode 2050 after a predetermined time interval PT1 from the second time point t2 if plasma is not generated within a determined time interval PT1 from the second time point t2.

[0234] The control method of the plasma generating device 2000 may include applying a second unit pulse UP2, and applying a third unit pulse UP3 to the electrode 2050 at a voltage greater than the second unit pulse UP2 after a first time interval PT1 from when the second unit pulse UP2 is applied.

[0235] The control method of the plasma generating device 2000 may include interrupting application of a high voltage pulse to the electrode 2050 based on a value acquired via the sensor 2070. The control method of the plasma generating device 2000 may include interrupting application of a high voltage pulse to the electrode 2050 when the value acquired via the sensor 2070 satisfies a predetermined condition. Referring to (b) of FIG. 21, the control method of the plasma generating device 2000 may include interrupting application of a high voltage pulse to the electrode 2050 in response to generation of plasma in the chamber 2010 (for example, at a third time point t3) after applying the third unit pulse UP3.

[0236] 2.3.3 Example 3 According to one embodiment, a plasma generating apparatus can be provided that applies an RF voltage to an antenna module, obtains sensing information on a plasma state, and adjusts a period of a high voltage pulse applied to an electrode if the sensing information does not satisfy a predetermined condition. According to one embodiment, a method for controlling a plasma generating apparatus can include reducing an operation period of a second power source that generates a high voltage pulse when plasma generation is not detected.

[0237] FIG. 22 is a diagram for explaining a method of controlling a plasma generating apparatus according to an embodiment.

[0238] Referring to FIG. 22, a method for controlling a plasma generating apparatus according to one embodiment may further include, after step S130 of acquiring sensing information regarding the above-mentioned plasma state, step S171 of determining whether the sensing information satisfies a predetermined condition, step S172 of applying a high voltage pulse to an electrode if the sensing information does not satisfy the predetermined condition, step S173 of determining whether the sensing information satisfies the predetermined condition after applying the high voltage pulse to the electrode, and step S174 of reducing the period of the high voltage pulse if the sensing information does not satisfy the predetermined condition.

[0239] The control method for the plasma generating device can include periodically acquiring sensing information, determining whether the acquired sensing information satisfies a predetermined condition, and, if the sensing information does not satisfy the predetermined condition, reducing the period (the time interval between adjacent high voltage pulses in a time series) of the high voltage pulse applied to the electrode.

[0240] Referring to FIG. 22, the control method of the plasma generating device may include repeatedly executing step S172 of applying a high voltage pulse to an electrode if the sensing information does not satisfy a predetermined condition, step S173 of acquiring sensing information again after applying the high voltage pulse to the electrode and determining whether the acquired sensing information satisfies the predetermined condition, and step S174 of increasing the voltage of the high voltage pulse if the acquired sensing information does not satisfy the predetermined condition.

[0241] FIG. 23 is a diagram for explaining the output of RF current and high voltage pulses by the control method of the plasma generation apparatus according to one embodiment.

[0242] Referring to FIG. 23, a method for controlling a plasma generating apparatus according to one embodiment may further include, after step S130 of acquiring sensing information regarding the plasma state described above, step S175 of determining whether the sensing information satisfies a predetermined condition, step S176 of applying a high voltage pulse to the electrode at a first time interval if the sensing information does not satisfy the predetermined condition, step S177 of determining whether the sensing information satisfies the predetermined condition after applying a high voltage pulse to the electrode at the first time interval, and step S178 of applying a high voltage pulse to the electrode at a second time interval if the sensing information does not satisfy the predetermined condition.

[0243] Referring to FIG. 23, the control method of the plasma generating device may include step S130 of acquiring first sensing information at a first time point, step S175 of determining whether the acquired first sensing information satisfies a predetermined condition, step S176 of applying a high voltage pulse to an electrode at a first time interval via a second power source if the acquired first sensing information does not satisfy the predetermined condition, step S176 of acquiring second sensing information at a second time point after the first time point (not shown), and step S178 of applying a high voltage pulse to the electrode at a second time interval shorter than the first time interval via the second power source if the acquired second sensing information does not satisfy the predetermined condition.

[0244] Figure 24 is a diagram for explaining the output of the output current and the high voltage pulse according to the control method of the plasma generation device 2000 according to one embodiment. Unless otherwise stated, the contents of Figures 18 and 21 described above can be similarly applied to the control method of the plasma generation device 2000 described in relation to Figure 24.

[0245] FIG. 24(a) shows that when an AC voltage is applied to the antenna module 2030 from a first time point t1 via the first power source P1 by the control method of the plasma generation device 2000 according to one embodiment, the output current i RF 24(a) is a diagram showing the above-mentioned configuration, and the contents described in relation to FIG. 18(a) can be similarly applied to FIG.

[0246] The control method of the plasma generating device 2000 according to an embodiment may include generating a high voltage pulse to induce plasma generation if plasma is not generated within a predetermined time by the AC voltage, and gradually decreasing the application period of the high voltage pulse to minimize damage to the device and generation of by-products. Unless otherwise specified, the contents described in relation to FIG. 18 may be similarly applied to the high voltage pulse application operation.

[0247] 24(b), the method of controlling the plasma generating device 2000 according to the embodiment may include applying a first unit pulse UP1 to the electrode 2050 at a second time point t2 after a predetermined time PT from the first time point, applying a second high-voltage pulse UP2 to the electrode at a third time point t3 after the first time interval PT1 from the second time point t2, and applying a third high-voltage pulse UP3 to the electrode at a fourth time point after the second time interval PT2 from the third time point t3. In this case, the second time interval PT2 may be shorter than the first time interval PT1.

[0248] The control method of the plasma generating device 2000 according to an embodiment may include applying a first unit pulse UP1 to the electrode 2050 at a second time point t2, acquiring sensing information indicating a plasma state during a first time interval PT1 after the second time point t2, determining whether a predetermined condition is satisfied based on the sensing information, and applying a second unit pulse UP2 to the electrode 2050 at a third time point t3 if the predetermined condition is not satisfied (i.e., plasma is not generated). The control method of the plasma generating device 2000 may further include acquiring sensing information indicating a plasma state during a second time interval PT2 after the third time point t3, determining whether a predetermined condition is satisfied based on the sensing information, and applying a third unit pulse UP3 to the electrode 2050 at a fourth time point t4 if the predetermined condition is not satisfied.

[0249] The contents for interrupting the application of the pulse can be similarly applied to the control method of the plasma generating device 2000 described in relation to Fig. 24. Referring to (b) of Fig. 24, the control method of the plasma generating device 2000 may include obtaining sensing information related to plasma generation (e.g., at a third time point t5) after applying the third unit pulse UP3, and interrupting the application of the high voltage pulse to the electrode 2050.

[0250] Meanwhile, in FIG. 24(b), an embodiment in which the time interval between individual unit pulses is changed has been described as a reference, but the contents of the invention described herein are not limited thereto. For example, a method for controlling the plasma generating device 2000 according to an embodiment may include gradually decreasing a period of a high voltage pulse applied to the electrode 2050 until plasma generation is sensed. In other words, the method for controlling the plasma generating device 2000 may further include applying one or more unit high voltage pulses to the electrode 2050 in a first period, acquiring sensing information in response to applying one or more unit high voltage pulses in the first period, and applying one or more high voltage pulses to the electrode 2050 in a second period shorter than the first period if plasma is not generated.

[0251] 2.4 RF Signal Modulation According to an embodiment, the plasma generating device may control the RF power supply based on the sensing information and a predetermined condition. The plasma generating device may control the power outputted through the RF power supply according to the state of the plasma (e.g., according to the presence or absence of plasma ignition (or generation)).

[0252] As a specific example, the plasma generating device applies an RF voltage to the antenna module to induce an initial discharge, and if the initial discharge (or ignition) does not occur within a predetermined time, the plasma generating device can gradually increase the magnitude of the current provided by the RF power source. For example, if the initial discharge (or ignition) does not occur within a predetermined time after starting to apply an RF voltage to the antenna module, the plasma generating device can gradually change the strength of the RF voltage applied to the antenna module.

[0253] When an initial discharge (or ignition) occurs, the plasma generating device can prevent an excessive voltage from being applied to the antenna module by not increasing the RF voltage any further.

[0254] As another specific example, the plasma generating apparatus may determine whether a predetermined condition for plasma generation is satisfied after applying an RF voltage to the antenna module for a certain period of time, and if the condition is not satisfied (i.e., plasma is not generated), change the output state of the RF voltage. For example, the plasma generating apparatus or its controller may apply an RF voltage to the antenna module via a first power source from a first time point to output a first power, and if sensing information does not satisfy a predetermined condition at a second time point after the first time point, apply an RF voltage to the antenna module via the first power source to output a second power greater than the first power. The plasma generating apparatus applying the RF voltage to the antenna module to output the second power greater than the first power may include increasing the magnitude of the RF voltage from the second time point.

[0255] A plasma generating apparatus according to an embodiment can change the frequency of an output RF current (or RF voltage) if an initial discharge (or ignition) does not occur within a predetermined time after starting to apply an RF voltage to an antenna module. The plasma generating apparatus can increase the frequency of the RF current (or RF voltage). The plasma generating apparatus can change the frequency of the RF current (or RF voltage) based on a phase difference between the RF voltage and the RF current applied to the antenna module. The plasma generating apparatus can change the frequency of the RF current (or RF voltage) so that the phase difference between the RF voltage and the RF current applied to the antenna module is reduced.

[0256] As a specific example, the plasma generating device may determine whether a predetermined condition for plasma generation is satisfied after applying an RF voltage to the antenna module for a certain period of time, and may change the output frequency of the RF power if the condition is not satisfied. For example, the plasma generating device or its controller may provide RF power to the antenna module via a first power source with a first frequency as a driving frequency from a first time point, and if the sensing information does not satisfy the predetermined condition at a second time point after the first time point, change the driving frequency to a second frequency. The second frequency may be higher than the first frequency. The plasma generating device may maintain the driving frequency of the RF power source if an initial discharge (or ignition) occurs.

[0257] 2.4.1 Example 4 According to one embodiment, a plasma generating device can be provided that applies an RF voltage to an antenna module, obtains sensing information on a plasma state, and applies a high voltage pulse to an electrode if the sensing information does not satisfy a predetermined condition. According to one embodiment, a method for controlling a plasma generating device can include applying a high voltage pulse to an electrode when plasma generation is detected.

[0258] FIG. 25 is a diagram for explaining a method of controlling a plasma generating apparatus according to an embodiment.

[0259] Referring to FIG. 25, the method for controlling a plasma generating apparatus according to one embodiment may further include, after step S130 of acquiring sensing information regarding the above-mentioned plasma state, step S181 of determining whether the sensing information satisfies a predetermined condition, and step S182 of increasing the magnitude of the RF voltage if the sensing information does not satisfy the predetermined condition.

[0260] The control method of the plasma generating device may include periodically acquiring sensing information, determining whether the acquired sensing information satisfies a predetermined condition, and increasing the magnitude (maximum value or effective value) of the voltage output by the RF power supply if the sensing information does not satisfy the predetermined condition.

[0261] Referring to FIG. 25, the control method of the plasma generating apparatus may include repeatedly executing the steps of applying an AC voltage to the antenna module to acquire sensing information when the sensing information does not satisfy a predetermined condition, determining whether the acquired sensing information satisfies the predetermined condition in step S181, and increasing the voltage of the RF power supply when the acquired sensing information does not satisfy the predetermined condition in step S182.

[0262] FIG. 26 is a diagram for explaining the output of RF current and high voltage pulses by the control method of the plasma generation apparatus according to one embodiment.

[0263] Referring to FIG. 26, a method of controlling a plasma generating apparatus according to one embodiment may further include, after step S130 of acquiring sensing information regarding the plasma state described above, step S183 of determining whether the sensing information satisfies a predetermined condition, step S184 of applying an RF voltage of a first magnitude to a load if the sensing information does not satisfy the predetermined condition, step S185 of determining whether the sensing information satisfies the predetermined condition after applying the RF voltage of the first magnitude to the load, and step S186 of applying an RF voltage of a second magnitude to the load if the sensing information does not satisfy the predetermined condition.

[0264] Referring to FIG. 26, a method of controlling a plasma generating apparatus according to one embodiment may include a step S130 of acquiring first sensing information at a first time point, a step S183 of determining whether the acquired first sensing information satisfies a predetermined condition, a step S184 of applying an AC voltage having a first magnitude to the antenna module via a first power source if the acquired first sensing information does not satisfy the predetermined condition, a step (not shown) of acquiring second sensing information at a second time point after the first time point, a step S185 of determining whether the acquired second sensing information satisfies the predetermined condition, and a step S186 of applying an AC voltage having a second magnitude greater than the first magnitude to the antenna module via the first power source if the second sensing information does not satisfy the predetermined condition.

[0265] 27 is a diagram for explaining the output current and the output of a high voltage pulse by the control method of the plasma generation device 2000 according to one embodiment. In the following, the control method of the plasma generation device 2000 will be described with reference to the plasma generation device 2000 illustrated in FIG.

[0266] The current i of the antenna module 2030 shown in (a) and (b) of FIG. RF and high voltage pulse V ig Unless otherwise specified below, the contents described in relation to (a) and (b) of Figure 18 can be similarly applied.

[0267] 27(a), the method of controlling the plasma generating device 2000 according to the embodiment may include gradually increasing the magnitude of the AC voltage applied to the antenna module 2030 via the first power source P1. As the intensity of the voltage applied to the antenna module 2030 is increased, the measured current i RF The intensity of the AC voltage can be increased. Hereinafter, a method for controlling the plasma generating device 2000 by changing the magnitude of the AC voltage will be described with reference to (a) of Fig. 27.

[0268] A control method of the plasma generation device 2000 according to one embodiment may include applying an AC voltage to the antenna module 2030 from a first time point t1, with a first voltage being a maximum voltage, and applying an AC voltage to the antenna module 2030 from a second time point t2, with a second voltage being a maximum voltage.

[0269] The control method of the plasma generating device 2000 can include changing the magnitude of the AC voltage applied to the antenna module 2030 via the first power source P1 based on the presence or absence of plasma generation.

[0270] For example, a method of controlling the plasma generation device 2000 according to an embodiment may include applying an AC voltage having a first voltage as a maximum voltage to the antenna module 2030 from a first time point t1, and acquiring sensing information indicating a plasma state between the first time point t1 and a second time point t2 in response to the application of the AC voltage having the first voltage as a maximum voltage to the antenna module 2030. The method of controlling the plasma generation device 2000 may further include applying an AC voltage having a second voltage as a maximum voltage to the antenna module 2030 from the second time point when the sensing information acquired between the first time point t1 and the second time point t2 indicates that plasma is not generated. The second voltage may be greater than the first voltage. Thus, the current i flowing through the antenna module 2030 from the second time point onwards may be RF The maximum value (or effective value) of the current i RF can have a value greater than the maximum (or effective) value of

[0271] The second point in time t2 may be a third time interval PT3 after the first point in time t1. The third time interval PT3 may be an integer multiple of a period (or a half period) of the AC voltage applied by the first power supply P1.

[0272] Referring to FIG. 27(a), at the third and fourth points in time after the second point in time, the AC voltage (and the associated current i of the antenna module 2030) is changed in the same manner as in the above-described embodiment. RFThe third time point t3 may be a third time interval PT3 or later from the second time point t2, and the fourth time point t4 may be a third time interval PT3 or later from the third time point t3.

[0273] Referring to (a) of Figure 27, the control method of the plasma generating device 2000 may further include, after a predetermined time PT has elapsed, maintaining the intensity of the voltage applied to the antenna module 2030 but applying a high voltage pulse to the electrode 2050.

[0274] The control method of the plasma generating device 2000 may include gradually increasing the intensity of the voltage applied to the antenna module 2030 via the first power source P1 during a predetermined time PT, and if no plasma is generated during the predetermined time PT, applying a high voltage pulse to the electrode 2050 via the second power source P2.

[0275] For example, referring to (b) of Fig. 27, the control method of the plasma generating device 2000 may include applying a high voltage pulse to the electrode 2050 using the second power supply P2 at a fifth time point t5 on or after the fourth time point t4. The fifth time point t5 may be on or after the third time interval PT3 from the fourth time point t4. The control method of the plasma generating device 2000 may further include controlling the second power supply P2 in the same manner as described in Figs. 18, 21, and 24 on or after the fifth time point t5.

[0276] 2.5 Composite Control In the above description, an embodiment has been described in which the application of a high voltage pulse is adjusted based on a change in the plasma state, and the intensity of the voltage applied by the RF AC power supply is adjusted, but the content of the invention described in this specification is not limited to this.

[0277] For example, in the embodiment described in relation to FIG. 27, the plasma generating device can adjust whether or not to apply a high voltage pulse, the application interval or the intensity via the second power source P2 after a predetermined time PT as in the embodiments described in FIG. 18, FIG. 21 or FIG. 24.

[0278] As a specific example, the method of controlling the plasma generating device according to an embodiment may include adjusting the intensity and interval of the high voltage pulse to assist plasma discharge. For example, the method of controlling the plasma generating device may include the steps of: applying an AC voltage to the antenna module from a first time point; applying a first high voltage pulse having a first voltage to the electrode at a second time point if plasma generation is not detected after the first time point and before a second time point; applying a second high voltage pulse having a second voltage greater than the first voltage to the electrode at a third time point if plasma generation is not detected after the second time point and before a third time point; and applying a second high voltage pulse having a third voltage greater than the third voltage to the electrode at a fourth time point if plasma generation is not detected after the third time point and before a fourth time point. In this case, the time interval between the second time point and the third time point may be greater than the time interval between the third time point and the fourth time point.

[0279] As another specific example, the method of controlling the plasma generating apparatus according to the embodiment may include adjusting the intensity (or interval) of the high voltage pulse and the intensity of the RF power supply to assist the plasma discharge. For example, the method of controlling the plasma generating apparatus may include gradually increasing the magnitude of the voltage output by the AC power supply between the first time point and the second time point, and gradually increasing the magnitude of the voltage of the high voltage pulse generated by the pulse generator after the second time point.

[0280] 3.Detection of plasma generation In the above embodiments, several examples of plasma generating devices and control methods thereof for efficiently assisting in plasma generation while suppressing the generation of by-products by controlling high voltage pulses or AC voltage based on the plasma state have been described.

[0281] However, according to the above embodiment, in order to effectively suppress the generation of by-products, the power supply (high voltage pulse or AC voltage) control must be based on sensing a change in the state of the plasma.

[0282] In the following, several embodiments of means or methods for sensing changes in the state of the plasma will be described.

[0283] 3.1 Power Change Detection According to one embodiment, a plasma generation device can be provided that includes a sensor that acquires sensing information related to the power supplied to the load based on a change in power information transmitted to the load depending on whether plasma is generated, senses whether plasma is generated based on a change in the power supplied to the load by the power source, and controls the operation of the power source accordingly.

[0284] In the following, a plasma generating device that controls a power supply based on a power change and a control method thereof will be described in several embodiments.

[0285] FIG. 28 is a diagram for explaining a plasma generating device 2100 including a sensor according to an embodiment.

[0286] 28, a plasma generating apparatus 2100 according to an embodiment may include a chamber 2110, an antenna module 2130, an electrode 2150, a sensor 2170, and a controller 2190. The configurations and operations of the plasma generating apparatus 2100 may be analogously applied to the contents described in relation to the plasma generating apparatus 2000 of FIG.

[0287] 28, the sensor 2170 can acquire sensing information from the first power source P1 and transmit the acquired information to the controller 2190. The controller 2190 can control the first power source P1 and / or the second power source P2 based on the information acquired via the sensor 2170.

[0288] FIG. 29 is a schematic circuit diagram illustrating a plasma generating device including a sensor according to an embodiment.

[0289] Referring to FIG. 29, the plasma generating apparatus according to the embodiment is DDand an inverter, a first power source P1 in which the sensor 2171 is located, a controller 2191, a second power source P2 including a high voltage pulse generator, an electrode 2151, and a variable load.

[0290] The inverter of the first power supply P1 receives a switching signal S A , S B , S C , S D The inverter can be operated according to a switching signal S A , S B , S C , S D According to the DC power supply V DD Based on the AC voltage V RF can be provided.

[0291] The high voltage pulse generator of the second power supply P2 generates a pulse control signal S P and can apply a high voltage pulse to electrode 2151.

[0292] The variable load may be a load whose value changes depending on the reactance and inductance due to the antenna module and the plasma generated within the chamber.

[0293] The sensor 2171 is powered by a DC power supply V DD The sensor 2171 is located between the DC power supply V and the inverter and can obtain sensing information regarding the power transmitted to the load. DD The sensor 2171 can obtain the voltage and / or current output by the controller 2191. The sensor 2171 can obtain the voltage and / or current and transmit it to the controller 2191. The sensor 2171 can obtain the amount of power P ref can be obtained and communicated to the controller 2191. The sensor 2171 can include a voltage meter and / or an ammeter.

[0294] The controller 2191 generates the switching signal S A , S B , SC , S D The controller 2191 can generate a switching signal S A , S B , S C , S D and applies an AC voltage to a load (or an antenna module) via the first power source P1.

[0295] The controller 2191 generates a pulse control signal S P The controller 2191 generates a pulse control signal S P can be generated to apply a high voltage pulse to the electrode 2151 via the second power supply P2.

[0296] The controller 2191 controls the high voltage generator of the second power source P2 based on the sensing information acquired through the sensor 2171 to generate a high voltage pulse V ig The controller 2191 can apply a pulse control signal S based on the sensing information acquired via the sensor 2171. P The controller 2191 controls the high voltage pulse V to be applied to the electrode 2151 based on the sensing information acquired via the sensor 2171. ig The controller 2191 can adjust the magnitude and / or period of the AC voltage applied to the antenna module based on the sensing information acquired via the sensor 2171.

[0297] For example, the controller 2191 acquires sensing information, and if the sensing information does not satisfy a predetermined condition, the controller 2191 outputs a pulse control signal S P can be generated to apply a high voltage pulse to electrode 2151.

[0298] Also, for example, the controller 2191 may not apply a high voltage pulse to the electrode 2151 when the controller 2191 acquires sensing information and the sensing information satisfies a predetermined condition.

[0299] In addition, for example, the controller 2191 periodically acquires sensing information, and when the sensing information does not satisfy a predetermined condition but does satisfy the predetermined condition, the controller 2191 outputs the pulse control signal S P The generation of can be discontinued and the application of the high voltage pulse to electrode 2151 discontinued.

[0300] In addition, for example, the controller 2191 periodically acquires sensing information, and when the sensing information satisfies a predetermined condition but no longer satisfies the predetermined condition, the controller 2191 outputs the pulse control signal S P can be generated to apply a high voltage pulse to electrode 2151.

[0301] The controller 2191 determining whether the sensing information satisfies a predetermined condition may include determining whether the sensing information satisfies a condition related to plasma generation. The controller 2191 determining whether the sensing information satisfies a predetermined condition may include comparing a value acquired via the sensor 2171 with a reference value. In this case, the reference value may be a value for determining the plasma generation state. For example, the reference value may be a threshold or a threshold interval for determining that plasma is generated when the sensed value is equal to or greater than the reference value, and that plasma is not generated when the sensed value is equal to or less than the reference value.

[0302] As a specific example, the controller 2191 may obtain power information Pref from the sensor 2171, and determine whether the power provided to the load by the first power source P1 is equal to or greater than a reference value based on the power information Pref. The controller 2191 may determine whether plasma discharge occurs based on whether the power provided to the load by the first power source P1 is equal to or greater than a reference value. The controller 2191 may obtain a power value indicating that plasma has been generated (or a power value equal to or greater than the reference value) and execute an operation when a predetermined condition is met, or obtain a power value indicating that plasma has not been generated (or a power value less than the reference value) and execute an operation when a predetermined condition is not met.

[0303] FIG. 30 is a diagram showing a power signal in a plasma generating device including a sensor according to one embodiment, and a control signal for a high voltage pulse that is changed based on the power signal.

[0304] 30(a) and (b) show the current i flowing through the load in the plasma generation device shown in FIG. 28 or FIG. 29. RF , pulse control signal S P and the pulse control signal S P A high voltage pulse V is applied to the voltage ig FIG.

[0305] Referring to (a) and (b) of FIG. 30, the plasma generating device applies an AC voltage to the antenna module and at a first time point t on The plasma generating device can apply a high voltage pulse to the electrode from the power signal. ig When a fault occurs, the high voltage pulse is stopped. off It is possible.

[0306] Referring to FIG. 30(a), in the plasma generating device according to the embodiment, at a time t ig The high voltage pulse application is interrupted after 98 ms from offReferring to FIG. 30(b), according to the plasma generating device according to the embodiment, at a time t ig The high voltage pulse application is interrupted after 960 ms from off can.

[0307] 3.2 Phase change detection On the other hand, during the period from when plasma is generated until the application of the associated high-voltage pulse (or other plasma discharge auxiliary operation) is discontinued due to the plasma generation, the high-voltage pulse is applied to the electrode despite the plasma being generated, which not only wastes unnecessary power but also causes the plasma to collide with the chamber wall, potentially damaging the device or generating impurities.

[0308] Therefore, by minimizing the time delay, damage to equipment and generation of impurities can be minimized. However, when power is used as sensing information by plasma generation, the delay time from when a power change occurs to when power control due to the power change is performed may be relatively long depending on the time required for removing noise from the voltage or current signal. The delay time can be further reduced by controlling the operation of the power supply based on the phase difference between the voltage and current measured by the antenna module, rather than the power change.

[0309] Below, several embodiments of a plasma generating device or a control method thereof that controls the operation of a first power supply or a second power supply based on the phase difference between the voltage and current applied to an antenna module (or a load) as a method for reducing time delay will be described.

[0310] FIG. 31 is a diagram for explaining a plasma generating device 2200 including a sensor according to each embodiment.

[0311] 31, a plasma generating apparatus 2200 according to an embodiment may include a chamber 2210, an antenna module 2230, an electrode 2250, a sensor 2270, and a controller 2290. For each configuration and operation of the plasma generating apparatus 2200, the contents described above regarding the plasma generating apparatus 2000 of FIG. 15 may be analogously applied.

[0312] 31, the sensor 2270 may acquire sensing information from the antenna module 2230 (or the load) and transmit the acquired information to the controller 2290. The controller 2290 may control the first power source P1 and / or the second power source P2 based on the information acquired via the sensor 2270. The sensor 2270 may acquire sensing information including at least one of a current flowing through the antenna module 2230 (or the load), a phase of the current, a voltage applied to the antenna module 2230 (or the load), and a phase of the voltage, and transmit the sensing information to the controller 2290.

[0313] FIG. 32 is a schematic circuit diagram illustrating a plasma generating device including a sensor according to an embodiment.

[0314] Referring to FIG. 32, the plasma generating apparatus according to the embodiment is a DC power supply V DD and an inverter, a controller 2291, a second power supply P2 including a high-voltage pulse generator, an electrode 2251, a sensor 2271 for acquiring a current flowing through the load, and a variable load. DD The contents described in relation to FIG. 29 can be similarly applied to the first power source P1, the controller 2291, the second power source P2, the electrode 2251, and the variable load.

[0315] Referring to FIG. 32, the plasma generating device according to the embodiment detects the current i RF or current i RFThe sensor 2271 may include a current transformer, a filter, and a comparator.

[0316] The sensor 2271 may be located around the load and connected to the antenna module to measure the current i flowing through the antenna module (or the load). RF or current i RF The sensor 2271 may acquire the phase of the current i RF or current i RF The phase of the signal can be obtained and transmitted to the controller 2291.

[0317] The controller 2291 can control the first power source P1 or the second power source P2 based on the sensing information acquired through the sensor 2271. The controller 2291 can control the first power source P1 or the second power source P2 based on the sensing information acquired through the sensor 2271. RF or current i RF and obtain the phase of the current i RF or current i RF It is possible to determine whether the phase of the first power source P1 or the second power source P2 satisfies a predetermined condition and control the first power source P1 or the second power source P2.

[0318] On the other hand, the current flowing through the load i RF and the voltage applied to the load, V RF For example, according to one embodiment, when no plasma discharge is generated in the chamber, the antenna module is supplied with an AC voltage V RF When the current i flows through the antenna module, RF is the voltage V applied to the antenna module RF When plasma discharge is generated in the chamber, the antenna module is supplied with an AC voltage V RF When the current i flows through the antenna module, RF is the voltage V applied to the antenna module RF may have a different phase than

[0319] The controller 2291 measures the current i flowing through the load. RF and the voltage applied to the load, V RF Based on the phase difference, the first power source P1 or the second power source P2 can be controlled.

[0320] The controller 2291 outputs a switching signal S A , S B , S C , S D From the voltage applied to the load, V RF or voltage V RF The controller 2291 can obtain the phase of the current i via the sensor 2271. RF or current i RF and obtain the phase of the voltage applied to the load, V RF and the current flowing through the load i RF Based on the phase difference, the first power source P1 or the second power source P2 can be controlled.

[0321] The controller 2291 determines whether the sensing information satisfies a predetermined condition. RF The controller 2291 may determine whether the information satisfies a condition for generating plasma. The controller 2291 may determine whether the predetermined condition is satisfied by detecting a current i flowing through the sensor 2271 to the load. RF and obtain the phase of the current i flowing through the load. RF The phase of the voltage V applied to the load RF The controller 2291 may determine whether the sensing information satisfies a predetermined condition by comparing the phase of the current i RF and the voltage applied to the load V RF The method may include determining whether a phase difference between the phases of the first and second signals is equal to or greater than a reference value.

[0322] The controller 2291 controls the first power source P1 and / or the second power source P2 depending on the presence or absence of plasma discharge by controlling the current i flowing through the load. RF and the voltage applied to the load V RFIt is possible to determine whether the phase difference between the phases is equal to or greater than a reference value, and if the phase difference is equal to or greater than the reference value (i.e., if a plasma discharge occurs), no discharge auxiliary operation is performed, and if the phase difference is equal to or less than the reference value (i.e., if a plasma discharge does not occur), the discharge auxiliary operation is performed.

[0323] The controller 2291 measures the current i flowing through the load. RF and the voltage applied to the load V RF If the phase difference is greater than the reference value, it is not necessary to apply a high voltage pulse to the electrode 2251 via the second power supply P2.

[0324] The controller 2291 determines whether the sensing information satisfies a predetermined condition, and controls the current i flowing through the load. RF and the voltage applied to the load V RF If the phase difference is smaller than the reference value, a high voltage pulse can be applied to the electrode 2251 via the second power supply P2.

[0325] Fig. 33 is a schematic circuit diagram for explaining a plasma generating apparatus including a sensor according to an embodiment. The contents described in relation to Figs. 29 and 32 can be similarly applied to the plasma generating apparatus illustrated in Fig. 33.

[0326] Referring to FIG. 33, the plasma generating device according to the embodiment has a current i flowing through the antenna module (or load). RF or current i RF The sensor 2273 may include a sensing resistor R connected in series with the antenna module (or load). SEN , filter and comparator, sensing resistor R SEN Measure the voltage and measure the current i flowing through the antenna module (or load). RF or current i RF The phase of the signal can be obtained.

[0327] Meanwhile, in the above embodiment, the controller acquires the phase of the voltage applied to the antenna module from the switching signal, but this is not a required configuration. The plasma generating device described in this specification may further include a sensor that acquires the phase of the voltage applied to the antenna module. Hereinafter, several embodiments of the sensor that acquires the phase of the voltage applied to the antenna module will be described.

[0328] 34 is a schematic circuit diagram for explaining some embodiments of a plasma generating device including a sensor. (a), (b), and (c) of FIG. 34 show the voltage V applied to the antenna module, respectively. RF FIG. 22 is a diagram for explaining a plasma generating device including sensors 2275, 2277, and 2279 for acquiring the phase of the plasma.

[0329] 34(a), a sensor 2275 according to an embodiment includes a resistor divider circuit connected to both ends of an antenna module. The sensor 2275 detects a voltage V applied to the antenna module via the resistor divider circuit. RF The phase of the signal can be obtained. If necessary, the sensor 2275 can further include a filter and / or a comparator.

[0330] 34(b), a sensor 2277 according to an embodiment includes a capacitor distribution circuit connected to both ends of an antenna module. The sensor 2277 detects a voltage V applied to the antenna module via the capacitor distribution circuit. RF The phase of the signal can be obtained. If necessary, the sensor 2277 can further include a filter and / or a comparator.

[0331] 34(c), a sensor 2279 according to an embodiment may include a transformer connected across the antenna module. The sensor 2279 detects a voltage V applied to the antenna module through the transformer. RFThe phase of the signal can be obtained. If necessary, the sensor 2279 can further include a filter and / or a comparator.

[0332] On the other hand, although not shown in Fig. 34, each plasma generating device may include a controller, a second power supply, and an electrode. The controller controls the voltage V applied to the antenna module via the sensors 2275, 2277, and 2279. RF and obtain the phase of the current i RF and the voltage V applied to the antenna module RF The operation of the inverter and / or the high voltage pulse generator can be controlled based on the phase difference.

[0333] 35(a) and (b) show the current i flowing through the load in the plasma generation apparatus shown in FIG. RF , pulse control signal S P and a high voltage pulse V applied to ig FIG.

[0334] FIG. 35 is a diagram showing a control signal of a high voltage pulse that is changed based on the phase difference between the voltage applied to the antenna module and the current flowing through the antenna module in a plasma generating device including a sensor according to one embodiment.

[0335] 35(a) and (b) show the current i flowing through the load in the plasma generation device shown in FIG. 28 or FIG. 29. RF , pulse control signal S P and the pulse control signal S P A high voltage pulse V is applied to the voltage ig FIG.

[0336] Referring to (a) and (b) of FIG. 35, the plasma generating device applies an AC voltage to the antenna module and at a first time point t onThe plasma generating device obtains the phase of the voltage applied to the antenna module and the phase of the current flowing through the antenna module, and generates a signal from the phase difference to determine the plasma discharge (t ig When a fault occurs, the high voltage pulse is stopped. off For example, the plasma generating device can interrupt the application of the high voltage pulse when the phase difference exceeds a reference value. off It is possible.

[0337] Referring to FIG. 35(a), in the plasma generating device according to the embodiment, at a time t ig The high voltage pulse application is interrupted 0.8 ms after t off Referring to FIG. 30(b), according to the plasma generating device according to the embodiment, at a time t ig The high voltage pulse application is interrupted 0.6 ms after t off can.

[0338] Referring to (a) and (b) of FIG. 35 and (a) and (b) of FIG. 30, when the application of the high voltage pulse is interrupted based on the phase difference between the current and voltage of the antenna module (FIG. 35) rather than the amount of power consumption (FIG. 30), the time t ig The high voltage pulse application is stopped at off It can be seen that the time from the start of the high voltage pulse application to the end of the high voltage pulse application is short. off By doing so, the time t ig The high voltage pulse application is stopped at off This minimizes the time it takes for the device to be cleaned and minimizes damage to the device or the generation of unwanted particles.

[0339] As described in the above embodiments, by using a plurality of antenna modules having different discharge characteristics, selective plasma discharge can be performed according to various discharge environments. By performing plasma discharge using a plurality of antenna modules, it is possible to provide a plasma generating device capable of performing discharge under various environments.

[0340] Although the embodiments have been described above with reference to the limited examples and drawings, those skilled in the art may make various modifications and variations from the above description. For example, the techniques described may be performed in an order different from that described, and / or the components of the described systems, structures, devices, circuits, etc. may be combined or combined in a manner different from that described, or may be replaced or substituted with other components or equivalents to achieve suitable results.

[0341] Therefore, other configurations, other embodiments, and equivalents to the claims are intended to fall within the scope of the following claims.

Claims

1. In the plasma generating device, A chamber providing a plasma generation space; an antenna module disposed around the chamber and connected to a first power source to form an induced electric field within the chamber; an electrode disposed around the chamber and connected to a second power source to assist in generating the plasma; a sensor for acquiring sensing information regarding a state of the plasma; a controller that controls the first power source and the second power source; The controller applies an RF voltage to a load including the antenna module via the first power source from a first time point, acquires the sensing information on a state of the plasma due to the application of the RF voltage, and controls the second power source based on the sensing information from a second time point that is a predetermined time after the first time point, The controller applies a pulse voltage to the electrode via the second power supply when the sensing information at the second time point does not satisfy a predetermined condition, and does not apply the pulse voltage to the electrode via the second power supply when the sensing information at the second time point satisfies a predetermined condition.

2. 2. The plasma generation device according to claim 1, wherein, according to the predetermined condition, when the sensing information indicates that the plasma has not been generated in the chamber, the controller applies the pulse voltage to the electrode via the second power supply, and when the sensing information indicates that the plasma has been generated in the chamber, the controller does not apply the pulse voltage to the electrode.

3. The plasma generation device according to claim 1 , wherein the sensing information acquired by the sensor indicates power supplied to the load via the first power supply.

4. 4. The plasma generation apparatus of claim 3, wherein the controller applies the pulse voltage to the electrode when the sensing information at the second time indicates that the power supplied to the load is less than a reference power, and does not apply the pulse voltage to the electrode when the sensing information at the second time indicates that the power supplied to the load is equal to or greater than a reference power.

5. 4. The plasma generation device according to claim 3, wherein the first power source includes a DC power source and an inverter that converts the DC power of the DC power source into RF power, the sensor is located between the DC power source and the inverter, and acquires a first voltage output by the DC power source and a first current output from the DC power source, and the controller applies the pulse voltage to the electrode based on the power supplied to the load determined based on the first voltage and the first current.

6. The plasma generation device according to claim 1 , wherein the sensor acquires the sensing information based on a second current flowing through the antenna module.

7. 7. The plasma generation device according to claim 6, wherein the controller applies the pulse voltage to the electrode when a phase difference between the second current and the RF voltage at the second time point does not satisfy the predetermined condition, and does not apply the pulse voltage to the electrode when a phase difference between the second current and the RF voltage at the second time point satisfies the predetermined condition.

8. 2. The plasma generation device of claim 1, wherein the controller applies a first pulse voltage to the electrode via the second power source so that the electrode provides a first power when the sensing information at the second time point does not satisfy the predetermined condition, and applies a second pulse voltage to the electrode via the second power source so that the electrode provides a second power greater than the first power when the sensing information at a third time point after the second time point does not satisfy the predetermined condition.

9. 2. The plasma generation device of claim 1, wherein the controller applies a first pulse voltage having a first voltage value to the electrode via the second power source when the sensing information at the second time point does not satisfy the predetermined condition, and applies a second pulse voltage having a second voltage value greater than the first voltage value to the electrode via the second power source when the sensing information at a third time point after the second time point does not satisfy the predetermined condition.

10. 2. The plasma generation device according to claim 1, wherein the controller applies the pulse voltage to the electrode at a first period if the sensing information does not satisfy the predetermined condition at the second time point, and applies a high voltage pulse to the electrode at a second period that is shorter than the first period if the sensing information does not satisfy the predetermined condition at a third time point that is one hour after the second time point.

11. 2. The plasma generation device according to claim 1, wherein the controller applies an RF voltage having a first magnitude to the load via the first power source from the first time point, and when the sensing information does not satisfy the predetermined condition at a third time point that is after the first time point and before the second time point, applies an RF voltage having a second magnitude greater than the first magnitude to the load.

12. 2. The plasma generating device of claim 1, wherein the controller applies the pulse voltage having a first voltage value to the electrode via the second power source when the sensing information at the second time point does not satisfy the predetermined condition, and interrupts the application of the pulse voltage when the sensing information at a third time point that is later than the second time point satisfies the predetermined condition.

13. A method for controlling a plasma generating device including a chamber providing a plasma generating space, an antenna module arranged around the chamber and connected to a first power source to form an induction electric field in the chamber, an electrode arranged around the chamber and connected to a second power source to assist the generation of the plasma, a sensor for acquiring sensing information on a state of the plasma, and a controller for controlling the first power source and the second power source, The controller applies an RF voltage to a load including the antenna module via the first power source from a first time point; The controller acquires the sensing information regarding a state of the plasma due to application of the RF voltage; The controller controls the second power source based on the sensing information from a second time point that is a predetermined time after the first time point, The step of the controller controlling the second power source includes: The method for controlling a plasma generation apparatus includes the controller not applying a pulse voltage to the electrode via the second power supply when the sensing information at the second time point satisfies a predetermined condition, and applying the pulse voltage to the electrode via the second power supply when the sensing information at the second time point does not satisfy the predetermined condition.

14. The control method of the plasma generation apparatus according to claim 13, wherein the controller controls the second power supply, the controller applies the pulse voltage to the electrode via the second power supply when the sensing information indicates that the plasma has not been generated in the chamber, and does not apply the pulse voltage to the electrode when the sensing information indicates that the plasma has been generated in the chamber.

15. the sensing information acquired by the sensor indicates power supplied to the load via the first power source, The method of claim 13, wherein the controller controls the second power source by applying the pulse voltage to the electrode when the sensing information at the second time point indicates that the power supplied to the load is less than a reference power, and not applying the pulse voltage to the electrode when the sensing information at the second time point indicates that the power supplied to the load is equal to or greater than a reference power.

16. the sensing information acquired by the sensor indicates power supplied to the load via the first power source, The first power source includes a DC power source and an inverter that converts DC power of the DC power source into RF power, and the sensor is located between the DC power source and the inverter and acquires a first voltage output by the DC power source and a first current output from the DC power source; The method for controlling the plasma generation apparatus according to claim 13, wherein the controller controls the second power supply based on a power supplied to the load determined based on the first voltage and the first current.

17. The sensor acquires the sensing information based on a second current flowing through the antenna module; 14. The method of claim 13, wherein the controller controls the second power supply. The method further includes: the controller obtains the sensing information; and when a phase difference between the second current and the RF voltage at the second time point does not satisfy the predetermined condition, the controller applies the pulse voltage to the electrode; and when a phase difference between the second current and the RF voltage at the second time point satisfies the predetermined condition, the controller does not apply the pulse voltage to the electrode.

18. The step of the controller controlling the second power source includes:

14. The method of claim 13, further comprising: when the sensing information at the second time point does not satisfy the predetermined condition, applying a first pulse voltage to the electrode via the second power source so that the electrode provides a first power; and when the sensing information at a third time point after the second time point does not satisfy the predetermined condition, applying a second pulse voltage to the electrode via the second power source so that the electrode provides a second power greater than the first power.

19. The step of the controller controlling the second power source includes: the controller applies a first pulse voltage having a first voltage value to the electrode via the second power source when the sensing information at the second time point does not satisfy the predetermined condition, and does not apply the first pulse voltage to the electrode when the sensing information satisfies the predetermined condition; The method for controlling a plasma generating apparatus according to claim 13, further comprising the step of: applying a second pulse voltage having a second voltage value greater than the first voltage value to the electrode via the second power source when the sensing information does not satisfy the predetermined condition at a third time point after the second time point.

20. The step of the controller controlling the second power source includes: applying a pulse voltage having a first voltage value to the electrode via the second power source when the sensing information at the second time point does not satisfy the predetermined condition; The method for controlling a plasma generation apparatus according to claim 13, further comprising: a step of: when the sensing information satisfies the predetermined condition at a third time point after the second time point, the controller interrupts the application of the pulse voltage.

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