Electron beam device having schottky electron source and method for operating schottky electron source

Abstract

To provide an electron beam device having a Schottky electron source capable of restoring a collapsed shape of a facet in a short time without adding any hardware, and a method of operating the Schottky electron source.SOLUTION: A method for operating a Schottky electron source executes a first step of applying a first electric field to the Schottky electron source while heating the Schottky electron source at a first temperature, and a second step of applying a second electric field to the Schottky electron source while heating the Schottky electron source at a second temperature. The first temperature is higher than an operating temperature of the Schottky electron source and the second temperature, the first electric field is equal to or higher than an operating electric field of the Schottky electron source and lower than the second electric field, the second temperature is equal to or higher than the operating temperature and lower than the first temperature, and the second electric field is higher than the operating electric field and the first electric field.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present invention relates to an electron beam apparatus equipped with a Schottky electron source and a method of operating the Schottky electron source provided in the electron beam apparatus. [Background technology]

[0002] Schottky electron emitters (SEs) are widely used in electron beam devices such as electron microscopes as they are an electron source that can achieve both high spatial resolution and highly stable operation. Because they operate under high temperatures and high electric fields, they are also called thermal field emitters (TFEs).

[0003] One example of a Schottky electron source is the Zr / O / W electron source, which is made of a needle-shaped tungsten (W) single crystal with a (100) crystal face at its tip, and zirconium oxide (ZrO2) that serves as a source of zirconium (Zr) and oxygen (O) atoms. The (100) crystal face is called the facet, the needle-shaped tungsten single crystal is called the tip, and the zirconium oxide is called the reservoir. By heating the tip and applying an electric field, Zr and O atoms are supplied from the reservoir to the facet, lowering the work function of the facet, and the electric field is concentrated at the tip of the heated tip, causing electrons to be emitted from the facet. In the Zr / O / W electron source, the shape of the facet may be distorted and the emission current may become unstable during the initial startup period or after long-term use at a relatively low current density.

[0004] Patent Document 1 discloses a method for stabilizing the emission current of a Zr / O / W electron source with a deformed facet by sequentially carrying out the following first and second steps. That is, in the first step, the tip temperature is set to 1750K or more and less than 1900K, and an electric field of 1.5GV / m or more and less than 3.0GV / m is applied to the tip, thereby restoring the facet shape. In the second step, the tip temperature is set to 1600K or more and less than 1750K, and an electric field of 0.5GV / m or more and less than 1.5GV / m is applied to the tip, thereby maintaining a stable emission current.

[0005] Patent Document 2 discloses that a voltage of opposite polarity to the normal operation forward voltage is applied to an extraction electrode provided opposite to a thermal field emission electron source, thereby restoring the collapsed shape of the facet. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Special Publication No. 6-28142 [Patent Document 2] JP 2013-191353 A Summary of the Invention [Problem to be solved by the invention]

[0007] However, in Patent Document 1, the first step in which the shape of the facet is reproduced takes about 20 hours. In Patent Document 2, the facet can be reproduced in a relatively short time of about 30 minutes, but it is necessary to add hardware for applying a voltage of reverse polarity to the extraction electrode, such as a power supply of reverse polarity and a high voltage changeover switch, which increases the manufacturing cost of the electron beam apparatus.

[0008] Therefore, an object of the present invention is to provide an electron beam apparatus equipped with a Schottky electron source and a method for operating a Schottky electron source, which are capable of recovering a collapsed facet shape in a short time without adding hardware. [Means for solving the problem]

[0009] In order to achieve the above object, the present invention provides an electron beam apparatus including a Schottky electron source, further comprising a heating source which heats the Schottky electron source, a power source which applies an electric field to the Schottky electron source, and a control unit which controls the heating source and the power source, wherein the control unit executes a first step of applying a first electric field to the Schottky electron source while heating the Schottky electron source at a first temperature, and a second step of applying a second electric field to the Schottky electron source while heating the Schottky electron source at a second temperature, wherein the first temperature is higher than an operating temperature of the Schottky electron source and the second temperature, the first electric field is equal to or higher than an operating electric field of the Schottky electron source and lower than the second electric field, the second temperature is equal to or higher than the operating temperature and lower than the first temperature, and the second electric field is higher than the operating electric field and the first electric field.

[0010] The present invention also provides a method for operating a Schottky electron source, comprising: a first step of applying a first electric field to the Schottky electron source while heating the Schottky electron source at a first temperature; and a second step of applying a second electric field to the Schottky electron source while heating the Schottky electron source at a second temperature, wherein the first temperature is higher than an operation temperature of the Schottky electron source and the second temperature, the first electric field is equal to or higher than an operation electric field of the Schottky electron source and lower than the second electric field, the second temperature is equal to or higher than the operation temperature and lower than the first temperature, and the second electric field is higher than the operation electric field and the first electric field. Effect of the Invention

[0011] According to the present invention, it is possible to provide an electron beam apparatus equipped with a Schottky electron source and a method for operating a Schottky electron source, which are capable of recovering a collapsed shape of a facet in a short time without adding hardware. [Brief description of the drawings]

[0012] [Figure 1] 1 is a diagram showing an example of the configuration of a scanning electron microscope, which is an example of an electron beam apparatus according to the present invention; [Diagram 2]FIG. 1 is a schematic diagram showing a configuration example of an electron source according to the present invention. [Diagram 3] FIG. 2 is an enlarged schematic diagram showing the front end of a tip of a Schottky electron source. [Figure 4] FIG. 2 is an enlarged schematic diagram showing the front end of a tip on which a dark ring is formed. [Diagram 5] FIG. 13 is a graph showing the causal effects of temperature and electric field on the time it takes for the dark ring to disappear. [Figure 6] FIG. 13 is a diagram showing a physical model of the tip end corresponding to the cause-and-effect diagram. [Figure 7] 1 is a diagram for comparing an operation method of a Schottky electron source according to the present invention with a conventional operation method. [Figure 8] FIG. 13 is a diagram showing an example of the relationship between a filament current ratio and a tip temperature. [Figure 9] FIG. 13 is a diagram illustrating an example of the relationship between an effective voltage ratio and an electric field. [Figure 10] FIG. 13 is a diagram showing another example of a method of operating a Schottky electron source. [Figure 11] FIG. 13 is a diagram showing changes over time in emission current and probe current of a field emission microscope and in a field emission microscope image. [Figure 12] FIG. 1 is a diagram showing changes over time in emission current and probe current of a scanning electron microscope. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, with reference to the drawings, an embodiment of an electron beam apparatus including a Schottky electron source and an operating method of the Schottky electron source according to the present invention will be described.

[0014] An example of the configuration of a scanning electron microscope (SEM), which is an example of an electron beam device, will be described with reference to Fig. 1. The electron beam device may be a field emission microscope, a transmission electron microscope (TEM), a scanning transmission electron microscope (STEM), or the like.

[0015] The scanning electron microscope 1000 includes a column and a control system for irradiating an electron beam 109 onto a sample 117. The column includes an electron source 100, an extraction electrode 106, an anode 110, a first condenser lens 111, an aperture 112, a second condenser lens 113, an astigmatism correction coil 114, an objective lens 115, a deflection scanning coil 116, and a secondary electron detector 118, and is evacuated to a vacuum inside. The control system includes a computer 101, a controller 102, an acceleration power supply 103, a heating power supply 104, an extraction power supply 105, and a suppressor power supply 107.

[0016] The computer 101 controls the controller 102 based on input from an operator. The controller 102 is a computing device such as an MPU (Micro Processing Unit), and controls the acceleration power supply 103, the heating power supply 104, the extraction power supply 105, and the suppressor power supply 107, and receives a detection signal from a secondary electron detector 118. The acceleration power supply 103 applies a negative high voltage with respect to a ground voltage to the electron source 100. The heating power supply 104, which is floating on the acceleration power supply 103, supplies a filament current to the electron source 100. The extraction power supply 105 applies a positive voltage with respect to the electron source 100 to the extraction electrode 106. The suppressor power supply 107 applies a voltage to a suppressor electrode, which will be described later.

[0017] The electron source 100 emits an electron beam 109 by heating it with a filament current and applying a voltage to the extraction electrode 106. The electron beam 109 is accelerated by a voltage between the grounded anode 110 and the electron source 100. The accelerated electron beam 109 is focused by a first condenser lens 111, an aperture 112, a second condenser lens 113, an astigmatism correction coil 114, and an objective lens 115. The focused electron beam 109 is scanned by a deflection scanning coil 116 and irradiated onto an observation area on a sample 117. Secondary electrons generated from the sample 117 by irradiation with the electron beam 109 are detected by a secondary electron detector 118. A detection signal from the secondary electron detector 118 is used to generate an observation image. In addition to the secondary electron detector 118, a backscattered electron detector that detects backscattered electrons and an elemental analyzer that detects fluorescent X-rays may be provided.

[0018] An example of the configuration of the electron source 100 will be described with reference to FIG. 2. FIG. 2 shows the electron source 100 of FIG. 1 turned upside down. The electron source 100 has an insulator 1, an electrode pin 2, a filament 3, a tip 4, a reservoir 5, and a suppressor electrode 6. A V-shaped filament 3 is welded to two electrode pins 2 that penetrate a ceramic insulator 1. A needle-like tip 4 that is sharpened into a cone shape by electrolytic polishing or the like is welded to the tip of the filament 3. A reservoir 5 that supplies atoms that lower the work function of the tip of the tip 4 is provided in the body of the tip 4. The tip 4 and the filament 3 are surrounded by a suppressor electrode 6 for suppressing unnecessary thermionic emission. A negative voltage with respect to the tip 4 and the filament 3 is applied to the suppressor electrode 6. In the Zr / O / W electron source, which is an example of a Schottky electron source, a tungsten (W) single crystal with its long axis oriented in the

[0100] direction is used for the tip 4, and zirconium oxide (ZrO2) is used for the reservoir 5, and zirconium (Zr) atoms and oxygen (O) atoms are supplied from the reservoir 5 to the tip 4.

[0019] The tip of the tip 4 of the Zr / O / W electron source will be explained using Figure 3. When the W single crystal tip 4 is heated in a vacuum and an electric field is applied, a columnar crystal structure 7 is formed by crystal growth caused by atomic flow to the tip of the tip 4, a so-called build-up. Furthermore, a facet 8, which is a flat W(100) crystal face, is formed at the very end of the columnar crystal structure 7, and serves as the electron emission surface. Furthermore, Zr atoms and O atoms diffuse from the reservoir 5 to the facet 8 by heating the tip 4, forming a monolayer film of Zr and O. The formation of the monolayer film reduces the work function of the facet 8, which is the electron emission surface, from 4.5 eV to 2.8 eV, making it easier to emit electrons.

[0020] In the Schottky electron source, the emission current may become unstable at the initial stage of startup or after a long period of use at a relatively low current density. The instability of the emission current occurs because the shape of the facet 8 is distorted and a ring-shaped step structure called a dark ring is formed on the surface of the facet 8.

[0021] The dark ring formed on the facet 8 will be described with reference to FIG. 4. When the facet 8 is improperly formed at the beginning of the startup of the Schottky electron source, or when a relatively low electric field is continuously applied to emit electrons at a relatively low current density, weakening the build-up, a dark ring 9 is formed within the surface of the facet 8. At the step of the dark ring 9, the electric field is shielded and the surface diffusion of Zr atoms and O atoms is inhibited, so that electrons are less likely to be emitted compared to a normal facet 8. In addition, the dark ring 9 moves over time within the surface of the facet 8, causing the probe current of the electron beam device to fluctuate. That is, in order to stably operate an electron beam device equipped with a Schottky electron source, it is necessary to quickly eliminate the dark ring 9 and regenerate the facet 8.

[0022] Therefore, the present inventors analyzed the temperature of the tip 4 and the electric field applied to the tip 4 as conditions for quickly eliminating the dark ring 9, using an orthogonal array experiment. In the orthogonal array experiment, three levels were set for each of the temperature of the tip 4 of the Zr / O / W electron source and the electric field applied to the tip 4. Specifically, the three temperature levels are a high temperature range (1850K or more and less than 2000K), a medium temperature range (1700K or more and less than 1850K), and a low temperature range (1550K or more and less than 1700K), which are obtained by dividing the temperature range in which the Zr / O / W electron source can operate without being damaged into thirds. The three electric field levels are a high electric field range (1.5 GV / m or more and less than 2.0 GV / m), a medium electric field range (1.0 GV / m or more and less than 1.5 GV / m), and a low electric field range (0.5 GV / m or more and less than 1.0 GV / m), which are obtained by dividing the electric field range in which the Zr / O / W electron source can operate without being damaged into thirds. The temperature of the tip 4 is set by the filament current flowing through the filament 3. The correspondence between the temperature of the tip 4 and the filament current may be obtained in advance. The electric field applied to the tip 4 is set by the voltage between the extraction electrode 106 and the suppressor electrode 6.

[0023] Using Figure 5, we will explain the factor effect diagram, which is the result of the orthogonal array experiment. The vertical axis of Figure 5 is the time until the dark ring 9 disappears, and the horizontal axis is the temperature of the tip 4 or the electric field applied to the tip 4. The time until the dark ring 9 disappears is measured using an image obtained by a field emission microscope equipped with a fluorescent screen on which the shape of the electron emission surface is enlarged and projected. Comparing the three levels of temperature, the dark ring 9 disappears in the shortest time in the high temperature range, and the time until disappearance becomes longer in the medium temperature range and the low temperature range. On the other hand, comparing the three levels of electric field, the time until the dark ring 9 disappears is longer in the high electric field range than in the medium electric field range and the low electric field range. The slope of the disappearance time with respect to temperature is larger than the slope of the disappearance time with respect to the electric field, and the slope is particularly large from the low temperature range to the medium temperature range.

[0024] Using Figure 6, we will explain the physical model of the tip tip corresponding to the factor effect diagram. The W atoms at the tip tip move in the direction of the arrow shown in Figure 6 due to the influence of temperature and electric field. Specifically, when the temperature increases, the W atoms move toward the body of the tip so that the tip tip becomes rounded due to surface tension. In addition, under a high electric field, the W atoms move toward the tip so that the electrostatic energy is stabilized. When a dark ring occurs, the tip tip is in the state (b), and if the surface tension and electrostatic force remain balanced, the dark ring will not disappear. If the temperature of the tip is increased here, the surface tension becomes larger than the electrostatic force, the tip tip becomes blunt, transitioning to the state (c), and the dark ring disappears. After that, if the temperature is lowered and the electric field is increased, the electrostatic force becomes larger than the surface tension, the W atoms move toward the tip, and a facet, which is a high-density crystal surface, grows and transitions to the state (a).

[0025] In addition, under high temperature and high electric field conditions as in Patent Document 1, the surface tension and electrostatic force are in balance as in (b), so it takes a long time for the dark rings to disappear. Also, in the state of (b), if the temperature is lowered and the electric field is increased, the electrostatic force becomes greater than the surface tension, but the electric field is shielded by the step of the dark ring, preventing the W atoms from moving to the tip, and it takes a long time for the dark rings to disappear.

[0026] The operation method of the present invention for a Schottky electron source with a deformed facet shape will be described with reference to Fig. 7, while comparing it with a conventional operation method such as that in Patent Document 1. In Fig. 7, the upper graph shows the temperature change over time, and the lower graph shows the electric field change over time. The operation method of the present invention is indicated by a solid line, and the conventional operation method is indicated by a dotted line.

[0027] In the operating method of the present invention, in a first step, the temperature is changed from the operating temperature to a first temperature, and the electric field is changed from the operating electric field to the first electric field, to eliminate the dark ring. Then, in a second step, the temperature is changed from the first temperature to a second temperature, and the electric field is changed from the first electric field to a second electric field, to form a facet. Note that the first temperature is higher than the operating temperature and the second temperature, and the second temperature is equal to or higher than the operating temperature and lower than the first temperature. Also, the first electric field is equal to or higher than the operating electric field and lower than the second electric field, and the second electric field is higher than the operating electric field and the first electric field. Note that the operating temperature is the temperature of the tip when observing a sample with the electron beam device, and the operating electric field is the electric field applied to the tip when observing a sample with the electron beam device.

[0028] As shown in the factor effect diagram in Figure 5, the higher the tip temperature, the shorter the time it takes for the dark ring to disappear, so the first temperature is preferably in the high temperature range (1850K or more and less than 2000K), but it is also effective in the medium temperature range (1700K or more and less than 1850K).The operating temperature of the Schottky electron source can be in the low temperature range (1550K or more and less than 1700K) or the medium temperature range (1700K or more and less than 1850K) depending on the purpose of use, so it is important that the first temperature is higher than the operating temperature.

[0029] As shown in the factorial effect diagram of Figure 5, the time until the dark ring disappears is shorter when the electric field applied to the tip is lower, so the first electric field is preferably in the low electric field range (0.5 GV / m or more and less than 1.0 GV / m) to medium electric field range (1.0 GV / m or more and less than 1.5 GV / m). The operating electric field of the Schottky electron source is in the low electric field range (0.5 GV / m or more and less than 1.0 GV / m) or the medium electric field range (1.0 GV / m or more and less than 1.5 GV / m) depending on the purpose of use, so it is important that the first electric field is equal to or higher than the operating electric field and lower than the second electric field.

[0030] In other words, in the first stage of the operating method of the present invention, the temperature of the tip is set to a first temperature higher than the operating temperature, and the electric field applied to the tip is set to a first electric field that is equal to or higher than the operating electric field but lower than the second electric field, and these are maintained for 10 minutes to several hours, thereby eliminating the dark ring.

[0031] In the subsequent second stage, the second temperature is set lower than the first temperature. Specifically, if the first temperature is in the high temperature range (1850K or more and less than 2000K), the second temperature is set in the low temperature range (1550K or more and less than 1700K) to the medium temperature range (1700K or more and less than 1850K). Also, if the first temperature is in the medium temperature range (1700K or more and less than 1850K), the second temperature is set in the low temperature range (1550K or more and less than 1700K).

[0032] Furthermore, the second electric field is set higher than the first electric field. Specifically, if the first electric field is in the low electric field range (0.5 GV / m or more and less than 1.0 GV / m), the second electric field is set in the medium electric field range (1.0 GV / m or more and less than 1.5 GV / m) to high electric field range (1.5 GV / m or more and less than 2.0 GV / m). Also, if the first electric field is in the medium electric field range (1.0 GV / m or more and less than 1.5 GV / m), the second electric field is set in the high electric field range (1.5 GV / m or more and less than 2.0 GV / m).

[0033] That is, in the second stage of the operating method of the present invention, the facet is regenerated by setting the temperature of the tip to a second temperature lower than the first temperature, and the electric field applied to the tip to a second electric field higher than the first electric field, and maintaining these for 10 minutes to several hours.

[0034] According to the operation method of the present invention, the dark ring is eliminated in the first step, and the facet is regenerated in the second step, so that the emission current can be stabilized in a relatively short time. That is, the point of the present invention is to move the unstable tip in the state of Fig. 6(b) to the state of Fig. 6(c), and then to the state of Fig. 6(a).

[0035] In contrast, in the conventional operating method, the facet is regenerated by increasing the temperature from the operating temperature to a first temperature higher than the second temperature, and increasing the electric field from the operating electric field to a second electric field higher than the first electric field. According to the conventional operating method, since both the temperature and the electric field are increased, the electrostatic force and the surface tension are balanced, and the state of (b) in Figure 6 is maintained, which requires a long time to regenerate the facet.

[0036] When carrying out the operating method of the present invention, the temperature of the tip 4 is set by the current supplied to the filament 3, and the electric field applied to the tip 4 is set by the voltage between the extraction electrode 106 and the suppressor electrode 6. Specifically, the temperature and electric field of the tip 4 are set based on the relationship between the filament current ratio and the tip temperature illustrated in Fig. 8 and the relationship between the effective voltage ratio and the electric field illustrated in Fig. 9.

[0037] An example of the relationship between the filament current ratio and the tip temperature will be described with reference to FIG. 8. FIG. 8 was created by measuring the temperature of the tip 4 while changing the filament current supplied to the filament 3 of the Zr / O / W electron source, with the horizontal axis being the tip temperature and the vertical axis being the W filament current ratio with the filament current normalized. Note that the upper solid line in FIG. 8 is when the filament current is 100% when the tip temperature is 1550K, and the lower solid line is when the filament current is 100% when the tip temperature is 2000K. The upper dotted line is when the filament current is 100% when the tip temperature is 1700K, and the lower dotted line is when the filament current is 100% when the tip temperature is 1850K.

[0038] From Fig. 8, it can be seen that if the filament current at the operating temperature is 100%, then the filament current at a first temperature higher than the operating temperature should be set to 101% to 121%. Also from Fig. 8, it can be seen that if the filament current at the first temperature is 100%, then the filament current at a second temperature lower than the first temperature should be set to 83% to 99%.

[0039] An example of the relationship between the effective voltage ratio and the electric field applied to the tip 4 will be described with reference to FIG. 9. FIG. 9 was created by calculating the electric field applied to the tip 4 according to the effective voltage, which is the voltage between the extraction electrode 106 and the suppressor electrode 6 of the Zr / O / W electron source, and the horizontal axis is the electric field, and the vertical axis is the effective voltage ratio in which the effective voltage is normalized. Note that the upper solid line in FIG. 9 is when the effective voltage is 100% when the electric field is 0.5 GV / m, and the lower solid line is when the effective voltage is 100% when the electric field is 2.0 GV / m. The upper dotted line is when the effective voltage is 100% when the electric field is 1.0 GV / m, and the lower dotted line is when the effective voltage is 100% when the electric field is 1.5 GV / m.

[0040] 9, if the effective voltage at the second electric field is taken as 100%, the effective voltage at the first electric field, which is equal to or higher than the operational electric field but lower than the second electric field, should be set to 30% to 99%. Also, from FIG. 9, if the effective voltage at the operational electric field is taken as 100%, the effective voltage at the second electric field, which is higher than the operational electric field and the first electric field, should be set to 101% to 324%.

[0041] The operating method of the present invention is also effective in suppressing the risk of damage due to discharge. Under high temperature and high electric field, a large number of electrons emitted from the Schottky electron source collide with the electrodes, generating desorbed gas, which may damage the Schottky electron source due to discharge caused by a decrease in the degree of vacuum. In contrast, in the operating method of the present invention, either the temperature or the electric field is set relatively low, suppressing the amount of electrons emitted from the Schottky electron source and reducing the risk of damage due to discharge caused by a decrease in the degree of vacuum.

[0042] The present invention is not limited to the operation method exemplified in FIG. 7. Another example of the operation method of the present invention will be described with reference to FIG. 10. FIG. 10(a) shows a method in which the temperature and the electric field are changed stepwise in each of the first and second stages. That is, the first temperature, which is the heating temperature in the first stage, is not fixed to a predetermined value, but is lowered stepwise within the range of the first temperature. In addition, the first electric field, which is the electric field in the first stage, is not fixed to a predetermined value, but is raised stepwise within the range of the first electric field. Furthermore, the second temperature, which is the heating temperature in the second stage, is lowered stepwise within the range of the second temperature, and the second electric field, which is the electric field in the second stage, is raised stepwise within the range of the second electric field. According to the operation method of FIG. 10(a), the amount of change in the temperature and the electric field is smaller than that in FIG. 7, so that the tip shape can be changed more smoothly than in the operation method of FIG. 7.

[0043] In FIG. 10(b), the temperature and the electric field are changed continuously in each of the first and second stages. That is, the heating temperature in the first stage is continuously lowered within the range of the first temperature. Also, the first electric field, which is the electric field in the first stage, is not fixed to a predetermined value, but is continuously raised within the range of the first electric field. In the second stage, the second temperature is continuously lowered within the range of the second temperature, and the second electric field is continuously raised within the range of the second electric field. According to the operation method of FIG. 10(b), the amount of change in the temperature and the electric field is smaller than that in FIG. 10(a), so the tip shape can be changed more smoothly than in the operation method of FIG. 10(a).

[0044] In Fig. 10(c), the temperature and electric field are changed continuously from the first stage to the second stage. That is, in the first and second stages, the temperature is continuously lowered and the electric field is continuously raised, and the temperature and electric field are also changed continuously at the boundary between the first and second stages. According to the operation method of Fig. 10(c), the amount of change in temperature and electric field is smaller than that in Fig. 10(b), so the tip shape can be changed more smoothly than in the operation method of Fig. 10(b).

[0045] In addition, in the operation method in which the first temperature, the first electric field, the second temperature, and the second electric field are fixed to predetermined values ​​as in Fig. 7, the temperature and the electric field can be easily controlled. In addition, in the operation method in Fig. 10(a), the first temperature, the first electric field, the second temperature, and the second electric field are changed stepwise, so that the temperature and the electric field can be easily controlled compared to Fig. 10(b) and (c). In addition, the operation may be performed in a combination in which the first stage is shown in Fig. 7 and the second stage is any of Fig. 10(a) to (c), or in which the first stage is any of Fig. 10(a) to (c) and the second stage is shown in Fig. 7.

[0046] An example of implementing the operating method of the present invention on a field emission microscope equipped with a phosphor screen on which the shape of the electron emission surface is enlarged and projected will be described with reference to Fig. 11. The upper part of Fig. 11 is a graph showing the change in emission current over time, with t11 to t12 being the first stage, t12 to t13 being the second stage, and t13 and onwards being the operation stage. The current emitted from the Schottky electron source and captured on the phosphor screen is measured as the emission current. The lower part of Fig. 11 is a graph showing the change in probe current over time, with field emission microscope images at each of the points in time (a) to (e) also shown. The current passing through a probe hole provided in the center of the phosphor screen is measured as the probe current.

[0047] A Zr / O / W electron source is used for the Schottky electron source. In the first stage, the temperature is set to the high temperature range (1850K to 2000K) and the electric field is set to the medium electric field range (1.0GV / m to 1.5GV / m). In the second stage, the temperature is set to the medium temperature range (1700K to 1850K) and the electric field is set to the high electric field range (1.5GV / m to 2.0GV / m). In the operational stage, the operational temperature is set to the low temperature range (1550K to 1700K) and the operational electric field is set to the low electric field range (0.5GV / m to 1.0GV / m).

[0048] In the first stage from t11 to t12, the emission current increases with time and then saturates, while the probe current increases initially, then decreases, reaches a minimum, and then settles to a constant value. During this time, the dark ring observed at time (a) moves toward the end, crosses the probe hole at time (b), and the probe current reaches a minimum. The probe current then becomes constant, and the dark ring reaches the end and disappears. The fact that the field emission microscope image obtained at time (c) is almost circular indicates that the tip end is rounded, as shown in Figure 6(c).

[0049] In the second stage from t12 to t13, the emission current is equivalent to that in the first stage, but the probe current increases compared to the first stage due to the higher electric field applied to the tip. The emission current remains almost constant, reducing the risk of damage due to discharge. The field emission microscope image, which was almost circular at the time point (c), changes to almost square at the time point (d), indicating that a facet is formed at the tip end.

[0050] In the operational stage after t13, the temperature and electric field are lowered compared to stage 2, so the emission current and probe current are lower than in stage 2. Note that since the dark ring has disappeared in stage 1 and the facet has been formed in stage 2, the shape of the facet is adjusted as shown in the field emission microscope image at time (e), and both the emission current and probe current are stable.

[0051] An example of implementing the operation method of the present invention on a scanning electron microscope will be described with reference to Fig. 12. The upper part of Fig. 12 is a graph showing the change in emission current over time, with t21 to t22 being the first stage, t22 to t23 being the second stage, and t23 and onwards being the operation stage. The current flowing into the Schottky electron source is measured as the emission current. The lower part of Fig. 12 is a graph showing the change in probe current over time. The current reaching the position of the sample is measured as the probe current.

[0052] A Zr / O / W electron source is used for the Schottky electron source. In the first stage, the temperature is set to the high temperature range (1850K to 2000K) and the electric field is set to the low electric field range (0.5GV / m to 1.0GV / m). In the second stage, the temperature is set to the low temperature range (1550K to 1700K) and the electric field is set to the high electric field range (1.5GV / m to 2.0GV / m). In the operational stage, the operational temperature is set to the low temperature range (1550K to 1700K) and the operational electric field is set to the low electric field range (0.5GV / m to 1.0GV / m).

[0053] In the first stage from t21 to t22, the emission current increases with time and then saturates, whereas the probe current increases initially, then decreases, reaches a minimum value, and then settles down to a constant value.

[0054] In the second stage from t22 to t23, the emission current decreases compared to the first stage due to the decrease in temperature, whereas the probe current increases compared to the first stage due to the increase in the electric field applied to the tip. Furthermore, by keeping the emission current below a certain value, the risk of damage due to discharge can be reduced.

[0055] In the operational stage after t23, the temperature and electric field are lowered than in the second stage, so the emission current and probe current are smaller than in the second stage. Note that the dark ring has disappeared in the first stage and the facet has formed in the second stage, so both the emission current and the probe current are stable.

[0056] The above describes the embodiments of the present invention. The present invention is not limited to the above embodiments, and the components can be modified without departing from the scope of the invention. For example, the Schottky electron source is not limited to the Zr / O / W electron source, and may be an electron source using tantalum (Ta), boron single crystals such as LaB6 and CeB6, carbide single crystals such as ZrC, HfC, and TiC, or nitride single crystals such as ZrN and TiN in the tip instead of the W single crystal. Also, it may be an electron source using HfO2 or the like in the reservoir instead of ZrO2. However, it is preferable that the temperature and electric field in the first and second stages are appropriately set according to the materials of the tip and the reservoir. In addition, a plurality of components disclosed in the above embodiments may be appropriately combined, and some components may be deleted from all the components shown in the above embodiments. [Explanation of symbols]

[0057] 1: insulator, 2: electrode pin, 3: filament, 4: tip, 5: reservoir, 6: suppressor electrode, 7: columnar crystal structure, 8: facet, 9: dark ring, 100: electron source, 101: computer, 102: controller, 103: acceleration power supply, 104: heating power supply, 105: extraction power supply, 106: extraction electrode, 107: suppressor power supply, 109: electron beam, 110: anode, 111: first condenser lens, 112: aperture, 113: second condenser lens, 114: astigmatism correction coil, 115: objective lens, 116: deflection scanning coil, 117: sample, 118: secondary electron detector, 1000: scanning electron microscope.

Claims

1. An electron beam apparatus including a Schottky electron source, a heat source for heating the Schottky electron source; a power source that applies an electric field to the Schottky electron source; A control unit for controlling the heating source and the power source is further provided. the control unit executes a first step of applying a first electric field to the Schottky electron source while heating the Schottky electron source at a first temperature, and a second step of applying a second electric field to the Schottky electron source while heating the Schottky electron source at a second temperature; the first temperature is greater than an operating temperature of the Schottky electron source and the second temperature; the first electric field is equal to or greater than an operating electric field of the Schottky electron source and is less than the second electric field; the second temperature is equal to or greater than the operating temperature and less than the first temperature; The electron beam apparatus, wherein the second electric field is higher than the operating electric field and the first electric field.

2. 2. The electron beam apparatus according to claim 1, When the Schottky electron source is a Zr / O / W electron source having a tungsten single crystal tip and a zirconium oxide reservoir, If the operating temperature is equal to or greater than 1550K and less than 1700K, the first temperature is equal to or greater than 1700K and less than 2000K; if the operating temperature is equal to or greater than 1700K and less than 1850K, the first temperature is equal to or greater than 1700K and less than 2000K; an electron beam apparatus, characterized in that, when the first temperature is equal to or greater than 1700K and less than 1850K, the second temperature is equal to or greater than 1550K and less than 1700K, and, when the first temperature is equal to or greater than 1850K and less than 2000K, the second temperature is equal to or greater than 1550K and less than 1850K.

3. 2. The electron beam apparatus according to claim 1, When the Schottky electron source is a Zr / O / W electron source having a tungsten single crystal tip and a zirconium oxide reservoir, The first electric field is equal to or greater than 0.5 GV / m and less than 1.5 GV / m; An electron beam device characterized in that when the operational electric field is 0.5 GV / m or more and less than 1.0 GV / m, the second electric field is 1.0 GV / m or more and less than 2.0 GV / m, and when the operational electric field is 1.0 GV / m or more and less than 1.5 GV / m, the second electric field is 1.5 GV / m or more and less than 2.0 GV / m.

4. 2. The electron beam apparatus according to claim 1, When the Schottky electron source is a Zr / O / W electron source having a tungsten single crystal tip and a zirconium oxide reservoir, and the heating source supplies a filament current to the Zr / O / W electron source, The control unit sets the filament current at the first temperature to 101% to 121% when the filament current at the operating temperature is 100%, and sets the filament current at the second temperature to 89% to 99% when the filament current at the first temperature is 100%.

5. 2. The electron beam apparatus according to claim 1, When the Schottky electron source is a Zr / O / W electron source having a tungsten single crystal tip and a zirconium oxide reservoir, and the power supply applies an effective voltage to the Zr / O / W electron source, The control unit is characterized in that, when the effective voltage at the second electric field is 100%, the effective voltage at the first electric field is 30% to 99%, and, when the effective voltage at the operational electric field is 100%, the effective voltage at the second electric field is 101% to 324%.

6. 2. The electron beam apparatus according to claim 1, The electron beam apparatus, wherein the control unit fixes the first temperature, the first electric field, the second temperature, and the second electric field to predetermined values.

7. 2. The electron beam apparatus according to claim 1, The electron beam apparatus, wherein the control unit changes the first temperature, the first electric field, the second temperature, and the second electric field in a stepwise manner.

8. 2. The electron beam apparatus according to claim 1, The electron beam apparatus, wherein the control unit continuously changes the first temperature, the first electric field, the second temperature, and the second electric field.

9. 1. A method of operating a Schottky electron source, comprising: performing a first step of applying a first electric field to the Schottky electron source while heating the Schottky electron source at a first temperature, and a second step of applying a second electric field to the Schottky electron source while heating the Schottky electron source at a second temperature; the first temperature is greater than an operating temperature of the Schottky electron source and the second temperature; the first electric field is equal to or greater than an operating electric field of the Schottky electron source and is less than the second electric field; the second temperature is equal to or greater than the operating temperature and less than the first temperature; The method of claim 1, wherein the second electric field is higher than the operating electric field and the first electric field.

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