Plasma processing apparatus, substrate processing apparatus, and temperature control system

Abstract

To provide a technique for generating electricity in a plasma processing apparatus.SOLUTION: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed within the plasma processing chamber and having a first flow path, an upper electrode assembly disposed above the substrate support and having a second flow path, a first chiller unit configured to maintain a first temperature regulating fluid flowing through the first flow path at the first temperature, a second chiller unit configured to maintain a second temperature regulating fluid flowing through the second flow path at the second temperature, and a thermoelectric element configured to generate electricity using a temperature difference between the first temperature regulating fluid and the second temperature regulating fluid.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus, a substrate processing apparatus, and a temperature adjustment system. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus including a lower electrode and an upper electrode. Patent Document 1 discloses that the temperature of the substrate W is adjusted by supplying a heat exchange medium from a chiller unit to a flow path in the lower electrode. Patent Document 1 also discloses that the upper electrode is cooled by supplying a coolant from the chiller unit to a flow path in the upper electrode. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-192728 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for generating electricity in a plasma processing apparatus. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed within the plasma processing chamber and having a first flow path; an upper electrode assembly disposed above the substrate support and having a second flow path; a first chiller unit configured to maintain a first temperature regulating fluid flowing through the first flow path at a first temperature; a second chiller unit configured to maintain a second temperature regulating fluid flowing through the second flow path at a second temperature; and a thermoelectric element configured to generate electricity using a temperature difference between the first temperature regulating fluid and the second temperature regulating fluid. Effect of the Invention

[0006] The present disclosure provides techniques for generating electricity in a plasma processing apparatus. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system including a plasma processing apparatus according to this embodiment. [Diagram 2] FIG. 2 is a diagram illustrating an outline of the configuration of the plasma processing apparatus according to the first embodiment. [Diagram 3] FIG. 3 is a diagram illustrating an outline of the configuration of a plasma processing apparatus according to the second embodiment. [Figure 4] FIG. 4 is a diagram illustrating an outline of the configuration of a plasma processing apparatus according to the third embodiment. [Diagram 5] FIG. 5 is a diagram illustrating an outline of the configuration of a plasma processing apparatus according to the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments for carrying out the present disclosure will be described with reference to the drawings. In this specification and the drawings, the same reference numerals are used for substantially the same configurations to avoid redundant description. In order to facilitate understanding, the scale of each part in the drawings may differ from the actual scale. In directions such as parallel, right angle, orthogonal, horizontal, vertical, up and down, left and right, deviations are allowed to a degree that does not impair the effects of the embodiment. The shape of the corners is not limited to right angles and may be rounded. Parallel, right angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0009] <Plasma Processing Apparatus According to First Embodiment> <Plasma processing system> An example of the configuration of the plasma processing system will be described below: Fig. 1 is a diagram illustrating an example of the configuration of a plasma processing system including a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to this embodiment.

[0010] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically isolated from the plasma processing chamber 10 housing.

[0011] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. The main body 111 also includes a flow path 111d through which the temperature control medium CL1 flows. The temperature control medium CL1 is supplied from the temperature adjustment unit 50. The temperature adjustment unit 50 adjusts the temperature control medium CL1 returned from the main body 111 to a predetermined temperature and supplies it to the main body 111. The temperature control medium CL1 is, for example, a heat transfer fluid such as brine or gas. Although not shown, the substrate support 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may further include a heater, a heat transfer medium, or a combination thereof. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0012] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. The shower head 13 further includes a flow path 13d through which the temperature control medium CL2 flows. The temperature control medium CL2 is supplied from the temperature control unit 60. The temperature control unit 60 adjusts the temperature control medium CL2 returned from the shower head 13 to a predetermined temperature and supplies it to the shower head 13. The temperature control medium CL2 is, for example, a heat transfer fluid such as brine or gas. The shower head 13 may be formed to include, for example, an upper electrode and a cooling plate. In addition to the shower head 13, the gas introduction part may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.

[0013] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse a flow rate of the at least one process gas.

[0014] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to a conductive member of the substrate support 11 and / or a conductive member of the showerhead 13. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0015] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13 via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13. The second RF generating unit 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signal or signals are provided to the conductive members of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0016] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, at least one of the first and second DC signals may be pulsed. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0017] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0018] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0019] A plasma processing apparatus according to a first embodiment will be described. The plasma processing apparatus according to the first embodiment includes an upper electrode having a first flow path through which a first temperature control medium flows, and a lower electrode having a second flow path through which a second temperature control medium flows. The plasma processing apparatus according to the first embodiment also includes a first temperature adjustment unit that adjusts the first temperature control medium returning from the first flow path to a first temperature and supplies it to the first flow path, and a second temperature adjustment unit that adjusts the second temperature control medium returning from the second flow path to a second temperature and supplies it to the second flow path. Furthermore, the plasma processing apparatus according to the first embodiment includes a power generation unit that generates power using the temperature difference between the first and second temperature control media.

[0020] FIG. 2 is a diagram illustrating an outline of the configuration of a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to a first embodiment.

[0021] The temperature adjustment unit 50 supplies the temperature adjustment medium CL1, whose temperature has been adjusted to a predetermined temperature, to the main body 111 (lower electrode). The temperature adjustment unit 50 also recovers the temperature adjustment medium CL1 from the main body 111. The temperature adjustment unit 50 then adjusts the temperature of the recovered temperature adjustment medium CL1 to a predetermined temperature and supplies it again to the main body 111. The temperature adjustment medium CL1 circulates between the main body 111 and the temperature adjustment unit 50.

[0022] The temperature adjustment unit 50 supplies the temperature adjustment medium CL1 to the main body 111 through the flow path P11. The temperature adjustment medium CL1 flowing out from the temperature adjustment unit 50 passes through the flow path P11 and flows into the flow path 111d in the main body 111.

[0023] The temperature adjustment unit 50 recovers the temperature adjustment medium CL1 from the main body 111 through the flow path P12. The temperature adjustment medium CL1 that has flowed through the flow path 111d in the main body 111 passes through the flow path P12 and flows into the temperature adjustment unit 50. Note that the flow paths P11 and P12 are sometimes collectively referred to as the circulation line L11. The circulation line L11 fluidly connects the temperature adjustment unit 50 and the flow path 111d in the main body 111.

[0024] The temperature adjustment unit 60 supplies the temperature adjustment medium CL2, which has been adjusted to a predetermined temperature, to the shower head 13 (upper electrode). The temperature adjustment unit 60 also collects the temperature adjustment medium CL2 from the shower head 13. The temperature adjustment unit 60 then adjusts the temperature of the collected temperature adjustment medium CL2 to a predetermined temperature and supplies it again to the shower head 13. The temperature adjustment medium CL2 circulates between the shower head 13 and the temperature adjustment unit 60.

[0025] The temperature adjustment unit 60 supplies the temperature adjustment medium CL2 through the flow path P21 to the shower head 13. The temperature adjustment medium CL2 flowing out from the temperature adjustment unit 60 passes through the flow path P21 and flows into the flow path 13d in the shower head 13.

[0026] The temperature adjustment unit 60 recovers the temperature adjustment medium CL2 from the shower head 13 via the flow path P22. The temperature adjustment medium CL2 that has flowed through the flow path 13d in the shower head 13 passes through the flow path P22 and flows into the temperature adjustment unit 60. Note that the flow paths P21 and P22 may be collectively referred to as the circulation line L12. The circulation line L12 fluidly connects the temperature adjustment unit 60 and the flow path 13d in the shower head 13.

[0027] Each of the temperature adjustment unit 50 and the temperature adjustment unit 60 may adjust the temperature so that the temperature of the temperature adjustment medium CL2 is higher than the temperature of the temperature adjustment medium CL1. That is, the temperature of the temperature adjustment medium CL2 may be higher than the temperature of the temperature adjustment medium CL1. For example, the temperature adjustment unit 50 may adjust the temperature of the temperature adjustment medium CL1 to be lower than 30°C, and the temperature adjustment unit 60 may adjust the temperature of the temperature adjustment medium CL2 to be within a range of 80°C to 150°C. Furthermore, the temperature adjustment unit 50 may adjust the temperature of the temperature adjustment medium CL1 to be lower than -20°C, and the temperature adjustment unit 60 may adjust the temperature of the temperature adjustment medium CL2 to be higher than 80°C.

[0028] Each of the flow paths P11, P12, P21, and P22 is formed of, for example, a pipe, a hose, or the like.

[0029] The plasma processing apparatus 1 includes a power generation unit 70 between the flow path P12 and the flow path P22. The power generation unit 70 is in thermal contact with each of the flow paths P12 and P22. Therefore, the heat of the temperature control medium CL1 in the flow path P12 and the heat of the temperature control medium CL2 in the flow path P22 are each transferred to the power generation unit 70.

[0030] In each of the flow paths P12 and P22, the portion connected to the power generation unit 70 may be made of a material with high thermal conductivity, such as a metal, so as to efficiently transfer heat from the temperature control medium CL1 or CL2. In each of the flow paths P12 and P22, the portion connected to the power generation unit 70 may be coated with a thermally conductive material such as grease.

[0031] The power generating unit 70 generates power by utilizing the temperature difference between the temperature control medium CL1 and the temperature control medium CL2. The power generating unit 70 includes, for example, a thermoelectric conversion element that converts thermal energy into electrical energy. The thermoelectric element is, for example, a Seebeck element. Note that a Peltier element that transfers heat using electrical energy may also be used as the thermoelectric element.

[0032] The electricity generated in the power generation unit 70 may be supplied to each of the temperature adjustment units 50 and 60, for example, or may be stored in a power storage unit such as a storage battery.

[0033] According to the plasma processing apparatus of the first embodiment, power can be generated by the temperature difference between a first temperature control medium that controls the temperature of the upper electrode and a second temperature control medium that controls the temperature of the lower electrode. According to the plasma processing apparatus of the first embodiment, power can be generated by the temperature difference between the first temperature control medium after controlling the temperature of the upper electrode and the second temperature control medium after controlling the temperature of the lower electrode, thereby making it possible to generate power by utilizing exhaust heat. According to the plasma processing apparatus of the first embodiment, power can be generated by utilizing exhaust heat, thereby making it possible to save power.

[0034] In the above example, electricity was generated by the temperature difference between the temperature control medium CL1 flowing through flow path P12 and the temperature control medium CL2 flowing through flow path P22, but the location where the power generation unit 70 is installed is not limited to the above example as long as there is a temperature difference between the temperature control medium CL1 and the temperature control medium CL2.

[0035] In the plasma processing apparatus according to the first embodiment, the shower head 13 is an example of an upper electrode assembly, and the flow path 13d in the shower head 13 is an example of a second flow path. The temperature control medium CL2 is an example of a second temperature control fluid, the temperature control unit 60 is an example of a second chiller unit or a second temperature control unit, and the temperature at which the temperature control unit 60 maintains the temperature control medium CL2 is an example of a second temperature. The circulation line L12 is an example of a second circulation line or a second temperature control line.

[0036] Moreover, the flow path 111d in the main body 111 is an example of a first flow path. Moreover, the temperature control medium CL1 is an example of a first temperature control fluid, the temperature control unit 50 is an example of a first chiller unit or a first temperature control unit, and the temperature at which the temperature control unit 50 maintains the temperature control medium CL1 is an example of a first temperature. The circulation line L11 is an example of a first circulation line or a first temperature control line.

[0037] In the plasma processing apparatus according to the first embodiment, the first temperature control line, the second temperature control line, the first temperature control unit, the second temperature control unit, and the thermoelectric element may form a temperature control system. The plasma processing apparatus is an example of a substrate processing apparatus.

[0038] <Plasma Processing Apparatus According to Second Embodiment> A plasma processing apparatus according to a second embodiment will be described. The plasma processing apparatus according to the second embodiment includes a first bypass flow path branched off from a flow path through which a first temperature control medium flows from an upper electrode to a first temperature adjustment unit in the plasma processing apparatus according to the first embodiment. The plasma processing apparatus according to the second embodiment also includes a second bypass flow path branched off from a flow path through which a second temperature control medium flows from a lower electrode to a second temperature adjustment unit in the plasma processing apparatus according to the first embodiment. The plasma processing apparatus according to the second embodiment also includes a power generation unit between the first bypass flow path and the second bypass flow path.

[0039] 3 is a diagram illustrating an outline of the configuration of a plasma processing apparatus 1A, which is an example of a plasma processing apparatus according to the second embodiment. Note that, in the plasma processing apparatus 1A, for the configuration common to the plasma processing apparatus 1, the description of the plasma processing apparatus 1 is to be referred to, and detailed description thereof will be omitted here.

[0040] The plasma processing apparatus 1A includes a three-way valve V1 in a flow path P12 through which a temperature control medium CL1 flows from a main body 111 (lower electrode) toward a temperature adjustment unit 50. The plasma processing apparatus 1A also includes a bypass flow path P12b that branches off from the three-way valve V1 and joins the flow path P12 downstream.

[0041] The plasma processing apparatus 1A also includes a three-way valve V2 in a flow path P22 through which the temperature control medium CL2 flows from the shower head 13 (upper electrode) toward the temperature adjustment unit 60. The plasma processing apparatus 1A also includes a bypass flow path P22b that branches off at the three-way valve V2 and joins the flow path P22 downstream.

[0042] The plasma processing apparatus 1A includes a power generating unit 70 between the bypass flow path P12b and the bypass flow path P22b. The power generating unit 70 is in thermal contact with each of the bypass flow path P12b and the bypass flow path P22b. Therefore, the heat of the temperature control medium CL1 in the bypass flow path P12b and the heat of the temperature control medium CL2 in the bypass flow path P22b are each transferred to the power generating unit 70.

[0043] The plasma processing apparatus according to the second embodiment can generate electricity by utilizing the temperature difference between a first temperature control medium that controls the temperature of the upper electrode and a second temperature control medium that controls the temperature of the lower electrode. The plasma processing apparatus according to the second embodiment can generate electricity by utilizing exhaust heat by utilizing the temperature difference between the first temperature control medium after controlling the temperature of the upper electrode and the second temperature control medium after controlling the temperature of the lower electrode. The plasma processing apparatus according to the second embodiment can save power by generating electricity by utilizing exhaust heat. The plasma processing apparatus according to the second embodiment can increase the degree of freedom in the location where the power generation unit is installed by providing a power generation unit in the bypass flow path.

[0044] In the plasma processing apparatus according to the second embodiment, the bypass flow path P22b is an example of a second branch line, and the bypass flow path P12b is an example of a first branch line.

[0045] <Plasma Processing Apparatus According to Third Embodiment> A plasma processing apparatus according to a third embodiment will be described. The plasma processing apparatus according to the third embodiment includes a lower electrode having a flow path through which a temperature control medium flows, a first temperature control unit that controls the temperature control medium to a first temperature, and a second temperature control unit that controls the temperature control medium to a second temperature. The plasma processing apparatus according to the third embodiment also includes a connection unit that connects the flow path with each of the first and second temperature control units, and a power generation unit that generates power using the temperature difference between the temperature control medium returning to the first temperature control unit and the temperature control medium returning to the second temperature control unit.

[0046] 4 and 5 are diagrams illustrating an outline of the configuration of a plasma processing apparatus 1B, which is an example of a plasma processing apparatus according to a third embodiment.

[0047] The plasma processing apparatus 1B includes a temperature adjustment medium supply unit 150 instead of the temperature adjustment unit 50 in the plasma processing apparatus 1.

[0048] The temperature adjustment medium supplying unit 150 supplies the temperature adjustment medium CL1, whose temperature has been adjusted to a predetermined temperature, to the main body 111 (lower electrode). The temperature adjustment medium supplying unit 150 also recovers the temperature adjustment medium CL1 from the main body 111. The temperature adjustment medium supplying unit 150 then adjusts the temperature of the recovered temperature adjustment medium CL1 to a predetermined temperature and supplies it again to the main body 111. The temperature adjustment medium CL1 circulates between the main body 111 and the temperature adjustment medium supplying unit 150.

[0049] The temperature adjustment medium supply unit 150 includes a temperature adjustment unit 151a that adjusts the temperature adjustment medium CL1 to a temperature T1, and a temperature adjustment unit 151b that adjusts the temperature adjustment medium CL1 to a temperature T2. The temperature adjustment medium supply unit 150 includes a connection unit 155 that connects each of the temperature adjustment units 151a and 151b to the flow path 111d in the main body unit 111. The connection unit 155 includes a three-way valve 152a, a three-way valve 152b, and a three-way valve 153. For example, the temperature T2 may be higher than the temperature T1. The temperature T1 may be lower than -20°C, and the temperature T2 may be higher than 30°C.

[0050] First, a case where the temperature adjustment medium supply unit 150 supplies the temperature adjustment medium CL1 at temperature T1 to the main body 111 (first mode) will be described with reference to FIG.

[0051] When the temperature adjustment medium supply unit 150 supplies the temperature adjustment medium CL1 at temperature T1 to the main body unit 111, the temperature adjustment medium supply unit 150 switches the three-way valve 152a so that the temperature adjustment medium CL1 flows from the temperature adjustment unit 151a to the main body unit 111. In FIG. 4, the arrowed line FPa11 indicates the path along which the temperature adjustment medium CL1 flows from the temperature adjustment unit 151a to the main body unit 111.

[0052] Furthermore, the temperature adjustment medium supply unit 150 switches the three-way valve 152b so that the temperature adjustment medium CL1 flows from the temperature adjustment unit 151b back to the temperature adjustment unit 151b. In Fig. 4, an arrowed line FPb1 indicates a path along which the temperature adjustment medium CL1 flows from the temperature adjustment unit 151b back to the temperature adjustment unit 151b.

[0053] Furthermore, the temperature adjustment medium supply unit 150 switches the three-way valve 153 so that the temperature adjustment medium CL1 flows from the main body unit 111 to the temperature adjustment unit 151a. In Fig. 4, an arrowed line FPa12 indicates a path along which the temperature adjustment medium CL1 flows from the main body unit 111 to the temperature adjustment unit 151a.

[0054] The flow path indicated by the arrowed line FPa11 and the arrowed line FPa12 may be referred to as a supply line L21. The flow path indicated by the arrowed line FPb1 may be referred to as a circulation line.

[0055] Next, a case (second mode) in which the temperature adjustment medium supply unit 150 supplies the temperature adjustment medium CL1 at temperature T2 to the main body 111 will be described with reference to FIG.

[0056] When the temperature adjustment medium supply unit 150 supplies the temperature adjustment medium CL1 at temperature T2 to the main body 111, the temperature adjustment medium supply unit 150 switches the three-way valve 152a so that the temperature adjustment medium CL1 flows from the temperature adjustment unit 151a back to the temperature adjustment unit 151a. In Fig. 5, the arrowed line FPa2 indicates the path along which the temperature adjustment medium CL1 flows from the temperature adjustment unit 151a back to the temperature adjustment unit 151a.

[0057] Furthermore, the temperature adjustment medium supply unit 150 switches the three-way valve 152b so that the temperature adjustment medium CL1 flows from the temperature adjustment unit 151b to the main body unit 111. In FIG. 5, an arrowed line FPb21 indicates a path along which the temperature adjustment medium CL1 flows from the temperature adjustment unit 151b to the main body unit 111.

[0058] Furthermore, the temperature adjustment medium supply unit 150 switches the three-way valve 153 so that the temperature adjustment medium CL1 flows from the main body 111 to the temperature adjustment unit 151b. In Fig. 5, an arrowed line FPb22 indicates a path along which the temperature adjustment medium CL1 flows from the main body 111 to the temperature adjustment unit 151b.

[0059] The flow paths indicated by the arrowed line FPb21 and the arrowed line FPb22 may be referred to as a supply line L22. The flow path indicated by the arrowed line FPa2 may be referred to as a circulation line.

[0060] The plasma processing apparatus 1B includes a power generation unit 70 between a flow path P31 through which the temperature control medium CL1 returns to the temperature control unit 151a and a flow path P32 through which the temperature control medium CL1 returns to the temperature control unit 151b. The power generation unit 70 is in thermal contact with both the flow path P31 and the flow path P32. Therefore, the heat of the temperature control medium CL1 in the flow path P31 and the heat of the temperature control medium CL1 in the flow path P32 are each transferred to the power generation unit 70.

[0061] The power generating unit 70 generates power from the temperature difference between the temperature adjustment medium CL1 returning to the temperature adjustment unit 151a and the temperature adjustment medium CL1 returning to the temperature adjustment unit 151b.

[0062] The control unit included in the plasma processing apparatus 1B switches three-way valves 152a, 152b, and 153, respectively, to establish supply lines and circulation lines in the first and second modes.

[0063] According to the plasma processing apparatus of the third embodiment, a temperature control medium is used to control the temperature of the lower electrode, and power can be generated by the temperature difference of the temperature control medium returning to each of the two temperature control units. According to the plasma processing apparatus of the third embodiment, power can be generated by utilizing exhaust heat by generating power by the temperature difference of the temperature control medium returning to each of the two temperature control units. According to the plasma processing apparatus of the third embodiment, power can be saved by generating power by utilizing exhaust heat. Furthermore, according to the plasma processing apparatus of the third embodiment, the amount of piping required can be reduced, thereby reducing the area required to install the power generation unit.

[0064] In the plasma processing apparatus according to the third embodiment, the plasma processing chamber 10 is an example of a chamber, the temperature control medium CL1 is an example of a first temperature control fluid and a second temperature control fluid, and the flow path 111d in the main body 111 is an example of an internal flow path. The temperature control unit 151a is an example of a first chiller unit, the temperature T1 is an example of a first temperature, the temperature control unit 151b is an example of a second chiller unit, and the temperature T2 is an example of a second temperature. The three-way valve 152a, the three-way valve 152b, and the three-way valve 153 are examples of a plurality of valves. The supply line L21 is an example of a first supply line, the supply line L22 is an example of a second supply line, the flow path indicated by the arrowed line FPb1 is an example of a first circulation line, and the flow path indicated by the arrowed line FPa2 is an example of a second circulation line.

[0065] The plasma processing apparatus according to the present embodiment disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiment can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The matters described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent.

[0066] The above disclosed embodiment includes, for example, the following aspects.

[0067] (Appendix 1) an upper electrode having a first flow path through which a first temperature control medium flows; a lower electrode having a second flow path through which a second temperature control medium flows; a first temperature adjustment unit that adjusts the first temperature adjustment medium returning from the first flow path to a first temperature and supplies the first temperature adjustment medium to the first flow path; a second temperature adjustment unit that adjusts the second temperature adjustment medium returning from the second flow path to a second temperature and supplies the second temperature adjustment medium to the second flow path; a power generation unit that generates power using a temperature difference between the first temperature control medium and the second temperature control medium; Equipped with Plasma processing equipment.

[0068] In the plasma processing apparatus according to the first embodiment, the shower head 13 is an example of an upper electrode, the flow path 13d in the shower head 13 is an example of a first flow path, the temperature control medium CL2 is an example of a first temperature control medium, the temperature control unit 60 is an example of a first temperature control unit, and the predetermined temperature of the temperature control medium CL2 adjusted by the temperature control unit 60 is an example of a first temperature.

[0069] Moreover, the main body 111 is an example of a lower electrode, the flow path 111d in the main body 111 is an example of a second flow path, the temperature adjustment medium CL1 is an example of a second temperature adjustment medium, the temperature adjustment unit 50 is an example of a second temperature adjustment unit, and the predetermined temperature of the temperature adjustment medium CL1 adjusted by the temperature adjustment unit 50 is an example of a second temperature.

[0070] (Appendix 2) The power generating unit is provided between a first bypass flow path branched off from a flow path through which the first temperature control medium flows from the upper electrode to the first temperature control unit, and a second bypass flow path branched off from a flow path through which the second temperature control medium flows from the lower electrode to the second temperature control unit. 2. The plasma processing apparatus according to claim 1.

[0071] In the plasma processing apparatus according to the second embodiment, the bypass flow path P22b is an example of a first bypass flow path, and the bypass flow path P12b is an example of a second bypass flow path.

[0072] (Appendix 3) a lower electrode having a flow path through which a temperature control medium flows; a first temperature control unit that controls the temperature control medium to a first temperature; a second temperature control unit that controls the temperature control medium to a second temperature; a connection portion that connects the flow path to each of the first temperature adjustment portion and the second temperature adjustment portion; a power generation unit that generates power using a temperature difference between the temperature control medium returning to the first temperature control unit and the temperature control medium returning to the second temperature control unit; Equipped with Plasma processing equipment.

[0073] In the plasma processing apparatus according to the third embodiment, the temperature control medium CL1 is an example of a temperature control medium, the main body 111 is an example of a lower electrode, and the flow path 111d in the main body 111 is an example of a flow path. Also, the temperature control unit 151a is an example of a first temperature control unit, the temperature T1 is an example of a first temperature, the temperature control unit 151b is an example of a second temperature control unit, and the temperature T2 is an example of a second temperature. [Explanation of symbols]

[0074] 1, 1A, 1B Plasma treatment device 10 Plasma Processing Chamber 13. Shower Head 13d Flow Path 50, 60 Temperature control section 70 Power Generation Division 111 Main body 111d Flow path 151a, 151b Temperature control section 155 Connection P12b, P22b bypass flow path

Claims

1. a plasma processing chamber; a substrate support disposed within the plasma processing chamber, the substrate support having a first flow path; an upper electrode assembly disposed above the substrate support and having a second flow path; a first chiller unit configured to maintain a first temperature regulated fluid flowing through the first flow path at a first temperature; a second chiller unit configured to maintain a second temperature regulated fluid flowing through the second flow path at a second temperature; a thermoelectric element configured to generate electricity using a temperature difference between the first temperature control fluid and the second temperature control fluid; Equipped with Plasma processing equipment.

2. a first circulation line fluidly connecting the first chiller unit and the first flow path; A second circulation line fluidly connecting the second chiller unit and the second flow path, The thermoelectric element is disposed between the first circulation line and the second circulation line. The plasma processing apparatus according to claim 1 .

3. a first circulation line fluidly connecting the first chiller unit and the first flow path; a second circulation line fluidly connecting the second chiller unit and the second flow path; a first branch line branched off from the first circulation line; A second branch line branched from the second circulation line, The thermoelectric element is disposed between the first branch line and the second branch line. The plasma processing apparatus according to claim 1 .

4. The second temperature is higher than the first temperature. The plasma processing apparatus according to claim 1 .

5. the first temperature is less than 30° C.; The second temperature is in the range of 80° C. to 150° C. The plasma processing apparatus according to claim 4 .

6. The first temperature is less than −20° C. The plasma processing apparatus according to claim 4 .

7. The second temperature is greater than 80° C. The plasma processing apparatus according to claim 6 .

8. the substrate support includes a base and an electrostatic chuck; The first flow path is formed in the base. The plasma processing apparatus according to claim 1 .

9. the upper electrode assembly includes an upper electrode and a cooling plate; The second flow path is formed in the cooling plate. The plasma processing apparatus according to claim 1 .

10. Further comprising a power storage unit electrically connected to the thermoelectric element. The plasma processing apparatus according to claim 1 .

11. A chamber; a substrate support disposed within the chamber and having an internal flow passage; a first chiller unit configured to maintain a first temperature regulated fluid at a first temperature; a second chiller unit configured to maintain the second temperature regulated fluid at a second temperature; A plurality of valves; A controller configured to control switching of the plurality of valves, In a first mode, the plurality of valves are controlled to establish a first supply line for circulating the first temperature regulating fluid between the internal flow path and the first chiller unit, and to establish a second circulation line for circulating the second temperature regulating fluid between at least one of the plurality of valves and the second chiller unit; a control unit that controls the plurality of valves in a second mode to establish a first circulation line that circulates the first temperature regulating fluid between at least one of the plurality of valves and the first chiller unit, and to establish a second supply line that circulates the second temperature regulating fluid between the internal flow path and the second chiller unit; a thermoelectric element disposed between the first supply line and the second circulation line and / or between the first circulation line and the second supply line; Substrate processing equipment.

12. The second temperature is higher than the first temperature. The substrate processing apparatus of claim 11 .

13. The first temperature is less than −20° C. The substrate processing apparatus of claim 12 .

14. The second temperature is greater than 30° C. The substrate processing apparatus of claim 13 .

15. the substrate support includes a base and an electrostatic chuck; The internal flow passage is formed in the base. The substrate processing apparatus according to claim 11 .

16. Further comprising a power storage unit electrically connected to the thermoelectric element. The substrate processing apparatus according to claim 11 .

17. A first temperature control line; A second temperature control line; a first temperature control unit configured to maintain a first temperature control medium flowing through the first temperature control line at a first temperature; a second temperature control unit configured to maintain a second temperature control medium flowing through the second temperature control line at a second temperature; A thermoelectric element disposed between the first temperature control line and the second temperature control line; Equipped with Temperature control system.

18. The thermoelectric element is configured to generate electricity by a temperature difference between the first temperature control medium and the second temperature control medium. The temperature control system according to claim 17.

19. The thermoelectric element is a Seebeck element. The temperature control system according to claim 17 or 18.

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