Method for manufacturing light emitting device and peeling method

Abstract

To provide a method for manufacturing a light emitting device and a peeling method that are capable of reducing occurrence of peeling defects.SOLUTION: A method for manufacturing a light emitting device 50 includes a step of preparing a laminate 30 having a substrate 10 and a semiconductor layer 20 laminated on the substrate 10, the laminate 30 having, in a plan view, an outer peripheral region 31 and a central region 32 located inside the outer peripheral region 31, and a step of irradiating the laminate 30 with a laser beam 62 to peel off the substrate 10 from the semiconductor layer 20. In the peeling step, the central region 32 and the outer peripheral region 31 are simultaneously irradiated with the laser beam 62, and the irradiation intensity of the laser beam 62 to be irradiated to the central region 32 is higher than the irradiation intensity of the laser beam 62 to be irradiated to the outer peripheral region 31.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The embodiments relate to a method for manufacturing a light emitting device and a peeling method. [Background technology]

[0002] It is known that when manufacturing a light emitting device, the substrate is peeled off from the semiconductor layer (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-42191 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments is to provide a method for manufacturing a light emitting device and a method for peeling the same, which can improve yield. [Means for solving the problem]

[0005] A method for manufacturing a light-emitting device according to one embodiment of the present invention includes the steps of: preparing a laminate having a substrate and a semiconductor layer laminated on the substrate, the laminate having, in a plan view, an outer peripheral region and a central region located inside the outer peripheral region; and irradiating the laminate with laser light to peel off the substrate from the semiconductor layer. In the peeling step, the central region and the outer peripheral region are irradiated with the laser light simultaneously. The irradiation intensity of the laser light irradiated to the central region is higher than the irradiation intensity of the laser light irradiated to the outer peripheral region.

[0006] A peeling method according to one embodiment of the present invention is a method of irradiating a laser beam to a laminate having a substrate and a semiconductor layer laminated on the substrate, the laminate having an outer peripheral region and a central region located inside the outer peripheral region in a plan view, to peel the substrate from the semiconductor layer. The central region and the outer peripheral region are irradiated with the laser beam simultaneously. The irradiation intensity of the laser beam irradiated to the central region is higher than the irradiation intensity of the laser beam irradiated to the outer peripheral region. Effect of the Invention

[0007] According to one embodiment of the present invention, it is possible to provide a manufacturing method and a peeling method for a light emitting device that can improve yield. [Brief description of the drawings]

[0008] [Figure 1] 3A and 3B are schematic plan views showing a laminate in the method for manufacturing the light emitting device according to the embodiment. [Diagram 2] 5A to 5C are schematic cross-sectional views showing preparation steps in a manufacturing method for a light emitting device according to an embodiment. [Diagram 3] 5A to 5C are schematic cross-sectional views showing a peeling step in the method for manufacturing the light emitting device according to the [Figure 4] 5A to 5C are schematic cross-sectional views showing a peeling step in the method for manufacturing the light emitting device according to the [Diagram 5] 5A to 5C are schematic cross-sectional views showing a supporting step in the manufacturing method for the light emitting device according to the embodiment [Figure 6] 5A to 5C are schematic cross-sectional views showing a removing step in the manufacturing method for the light emitting device according to the embodiment [Figure 7] 5A to 5C are schematic cross-sectional views showing a cutting step in the manufacturing method for the light emitting device according to the embodiment [Figure 8] 5A to 5C are schematic cross-sectional views showing a mounting step in the manufacturing method for the light emitting device according to the embodiment. [Figure 9] 5A to 5C are schematic cross-sectional views showing an arrangement step in the manufacturing method for the light emitting device according to the embodiment [Figure 10] 3 is a schematic plan view showing a mask used in the method for manufacturing the light emitting device according to the embodiment. FIG. [Figure 11] 4 is a schematic enlarged plan view showing a part of a mask used in the method for manufacturing a light emitting device according to the embodiment. FIG. [Figure 12] 4 is a schematic enlarged cross-sectional view showing a part of a mask used in the method for manufacturing a light emitting device according to the embodiment. FIG. [Figure 13] 13A and 13B are schematic plan views showing a laminated body in a manufacturing method for a light emitting device according to a modified example of the embodiment. [Figure 14] 13 is a schematic plan view showing a mask used in a method for manufacturing a light emitting device according to a modified example of the embodiment. FIG. [Figure 15] 13 is a schematic enlarged plan view showing a part of a mask used in a method for manufacturing a light emitting device according to a modified example of the embodiment. FIG. [Figure 16] 13 is a schematic enlarged plan view showing a part of a mask used in a method for manufacturing a light emitting device according to another modified example of the embodiment. FIG. [Figure 17] 13 is a schematic enlarged plan view showing a part of a mask used in a method for manufacturing a light emitting device according to another modified example of the embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those already explained are given the same reference numerals and detailed explanations are omitted as appropriate.

[0010] In the following, for ease of explanation, the arrangement and configuration of each part will be explained using an XYZ Cartesian coordinate system. The X-axis, Y-axis, and Z-axis are mutually perpendicular. The direction in which the X-axis extends will be referred to as the "X-direction", the direction in which the Y-axis extends as the "Y-direction", and the direction in which the Z-axis extends as the "Z-direction". In addition, for ease of explanation, the direction of the arrow in the Z-direction will be referred to as the upward direction, and the opposite direction as the downward direction, but these directions are unrelated to the direction of gravity. In addition, a view in a direction along the Z-direction will be referred to as a "planar view". In addition, an end view showing only the cut surface may be used as a cross-sectional view.

[0011] <Method of manufacturing the light emitting device> FIG. 1 is a schematic plan view showing a laminate in a method for producing a light emitting device according to an embodiment. FIG. 2 is a schematic cross-sectional view showing a preparatory step in the manufacturing method for the light emitting device according to the embodiment. FIG. 3 is a schematic cross-sectional view showing a peeling step in the method for manufacturing the light emitting device according to the embodiment. FIG. 4 is a schematic cross-sectional view showing a peeling step in the method for manufacturing the light emitting device according to the embodiment. FIG. 5 is a schematic cross-sectional view showing a supporting step in the manufacturing method for the light emitting device according to the embodiment. FIG. 6 is a schematic cross-sectional view showing a removing step in the manufacturing method for the light emitting device according to the embodiment. FIG. 7 is a schematic cross-sectional view showing a cutting step in the manufacturing method for the light emitting device according to the embodiment. FIG. 8 is a schematic cross-sectional view showing a mounting step in the manufacturing method for the light emitting device according to the embodiment. FIG. 9 is a schematic cross-sectional view showing an arrangement step in the manufacturing method for the light emitting device according to the embodiment. Fig. 2 is a schematic cross-sectional view taken along line II-II shown in Fig. 1. Figs. 3 to 9 are schematic cross-sectional views corresponding to the positions of line II-II in Fig. 1 during each process. 1 to 4, the method for manufacturing a light emitting device according to the embodiment includes a preparation step and a peeling step. The peeling step is performed after the preparation step.

[0012] (Preparation process) As shown in FIG. 1 and FIG. 2, in the preparation step, a laminate 30 is prepared. The laminate 30 has a substrate 10 and a semiconductor layer 20 laminated on the substrate 10. The laminate 30 may be prepared by purchasing or by manufacturing. When preparing the laminate 30 by manufacturing, the laminate 30 can be manufactured by laminating the semiconductor layer 20 on the substrate 10. In the laminate 30, the first surface 20a of the semiconductor layer 20 faces the first surface 10a of the substrate 10. The laminate 30 can have an electrode 21 on the second surface 20b side located on the opposite side to the first surface 20a of the semiconductor layer 20. In the example shown in FIG. 2, the laminate 30 has a covering layer 25 that covers the second surface 20b of the semiconductor layer 20 and the first surface 10a of the substrate 10.

[0013] The laminate 30 has an outer peripheral region 31 and a central region 32 in a plan view. The central region 32 is located inside the outer peripheral region 31. As shown in FIG. 1, the outer peripheral region 31 and the central region 32 are separated by a boundary BD1, which is a virtual line. An outer peripheral edge 31e of the outer peripheral region 31 overlaps with an outer peripheral edge 20e of the semiconductor layer 20 in a plan view. A center 32c of the central region 32 overlaps with a center 20c of the semiconductor layer 20 in a plan view. The outer peripheral region 31 and the central region 32 correspond to the outer peripheral portion (i.e., the outer portion including the outer peripheral edge 20e) and the central portion (i.e., the inner portion including the center 20c) of the semiconductor layer 20 in a plan view. In the example shown in FIG. 1, the outer shape of the semiconductor layer 20 is rectangular in a plan view. The outer shape of the semiconductor layer 20 is not limited to being rectangular, and may be a polygon other than a rectangle or may be a circle. Note that the corners of the polygon may or may not be recessed. Moreover, the sides of the polygon may be straight or curved.

[0014] In the example shown in FIG. 1, the outer shape of the outer peripheral region 31 is rectangular in plan view. Similarly, the outer shape of the central region 32 (i.e., the outer shape defined by the boundary BD1, which is a virtual line) is rectangular. In the example shown in FIG. 1, the boundary BD1 is located between the outer peripheral edge 31e of the outer peripheral region 31 and the center 32c of the central region 32. For example, the distance L1 between the outer peripheral edge 31e of the outer peripheral region 31 and the boundary BD1 is the same as the distance L2 between the center 32c of the central region 32 and the boundary BD1. The distance L1 may be shorter than the distance L2 or longer than the distance L2. The outer shape of the outer peripheral region 31 coincides with the outer shape of the semiconductor layer 20. The outer shape of the central region 32 can be the shape described in the outer shape of the semiconductor layer 20. The outer shape of the outer peripheral region 31 may be the same as or different from the outer shape of the central region 32. The same applies to the outer shape of the intermediate region 33 described later.

[0015] (Peeling process) As shown in Fig. 3 and Fig. 4, in the peeling step, the laminate 30 is irradiated with laser light 62 from a laser light irradiation device 60 to peel off the substrate 10 from the semiconductor layer 20. The laser light 62 is irradiated from the second surface 10b side located opposite to the first surface 10a of the substrate 10, passes through the substrate 10, and reaches the vicinity of the interface between the substrate 10 and the semiconductor layer 20 (i.e., the surface where the first surface 10a of the substrate 10 and the first surface 20a of the semiconductor layer 20 contact each other). When the semiconductor layer 20 contains gallium nitride (GaN), the gallium nitride present in the vicinity of the interface between the semiconductor layer 20 and the substrate 10 is decomposed into metallic gallium and nitrogen gas by the laser light, so that the substrate 10 can be peeled off from the semiconductor layer 20.

[0016] In the peeling process, the central region 32 and the peripheral region 31 are irradiated with the laser light 62 simultaneously. That is, in the peeling process, the laser light 62 is irradiated to both the central region 32 and the peripheral region 31 in one irradiation of the laser light 62. When irradiating the pulsed laser light 62, one set from the start to the end of irradiation of a predetermined pulse width is regarded as one irradiation of the laser light 62. In addition, in the peeling process, the laser light 62 is irradiated to the entire central region 32 and the peripheral region 31.

[0017] In the peeling step, the irradiation intensity of the laser light 62 irradiated to the central region 32 is set to be higher than the irradiation intensity of the laser light 62 irradiated to the peripheral region 31. The irradiation intensity is expressed as energy per unit area (J / cm 2 The irradiation intensity of the laser light 62 irradiated to the central region 32 is, for example, 1.0 J / cm 2 More than 1.2J / cm 2 The irradiation intensity of the laser light 62 irradiated to the outer peripheral region 31 is, for example, 0.8 J / cm. 2 More than 1.0J / cm 2 The following is the result.

[0018] When the peripheral region 31 and the central region 32 of the laminate 30 are irradiated with the same amount of laser light, peeling in the peripheral region 31 may occur before peeling in the central region 32. If peeling in the peripheral region 31 and peeling in the central region 32 occur at different times, the semiconductor layer 20 may be distorted, causing peeling defects such as cracking of the semiconductor layer 20. The reason for this is believed to be as follows.

[0019] For example, when the laminate 30 is produced by forming the semiconductor layer 20 containing gallium nitride, which has a smaller thermal expansion coefficient than sapphire, on the substrate 10 made of sapphire, it is necessary to form the semiconductor layer 20 while the substrate 10 is heated to a high temperature. The high temperature here refers to about 1000°C. When the substrate 10 is returned to room temperature after the semiconductor layer 20 is formed, the substrate 10 shrinks more than the semiconductor layer 20, so that the laminate 30 has a shape in which the center of the substrate 10 is recessed toward the first surface 10a side. On the other hand, after the substrate 10 is peeled off, the electrode 21 (for example, gold) has a higher thermal expansion coefficient than gallium nitride, so that the difference in the thermal expansion coefficient between the semiconductor layer 20 and the electrode 21 causes the semiconductor layer 20 to have a shape in which the center of the semiconductor layer 20 is recessed toward the first surface 20a side. In this way, the semiconductor layer 20 is recessed in the opposite direction before and after the peeling of the substrate 10, so that the change in stress is greater in the portion corresponding to the peripheral region 31 than in the portion corresponding to the central region 32, and the residual stress in the peripheral region 31 is greater than the residual stress in the central region 32. The residual stress here refers to the stress remaining after irradiation with the laser light 62. For this reason, it is considered that when the peripheral region 31 and the central region 32 of the laminate 30 are irradiated with the same amount of laser light, peeling in the peripheral region 31 occurs before peeling in the central region 32.

[0020] On the other hand, by making the irradiation intensity of the laser light 62 irradiated to the central region 32 higher than that of the laser light 62 irradiated to the outer circumferential region 31, the peeling in the central region 32 can be accelerated and the peeling in the outer circumferential region 31 can be relatively delayed. This makes it possible to reduce the difference in timing between the peeling in the outer circumferential region 31 and the peeling in the central region 32. As a result, the occurrence of peeling defects such as cracking of the semiconductor layer 20 can be reduced, and the yield can be improved. In addition, by eliminating the difference in timing between the peeling in the outer circumferential region 31 and the peeling in the central region 32 and performing the peeling in the outer circumferential region 31 and the peeling in the central region 32 simultaneously, the occurrence of peeling defects can be further reduced.

[0021] A mask can be used as a means for increasing the irradiation intensity of the laser light 62 irradiated to the central region 32 to be higher than the irradiation intensity of the laser light 62 irradiated to the peripheral region 31. In this embodiment, in the peeling step, as shown in FIG. 3, a mask 70 is arranged on the side of the laminate 30 where the laser light 62 is irradiated. That is, in the laminate 30 in which the substrate 10 is located on the semiconductor layer 20, the mask 70 is arranged above the laminate 30 (Z direction). The mask 70 has a first region 71 corresponding to the peripheral region 31 and a second region 72 corresponding to the central region 32. The mask 70 is arranged so that the first region 71 overlaps with the peripheral region 31 in a plan view, and the second region 72 overlaps with the central region 32 in a plan view.

[0022] 1 to 9, in the peeling step, the first region 71 and the second region 72 are simultaneously irradiated with laser light 62 at the same irradiation intensity. Then, the irradiation intensity of the laser light 62 transmitted through the second region 72 and irradiated to the central region 32 is set higher than the irradiation intensity of the laser light 62 transmitted through the first region 71 and irradiated to the outer circumferential region 31.

[0023] Specifically, by using a mask, the degree of light blocking in the first region 71 can be made higher than the degree of light blocking in the second region 72, so that the irradiation intensity of the laser light 62 that passes through the second region 72 and is irradiated to the central region 32 can be made higher than the irradiation intensity of the laser light 62 that passes through the first region 71 and is irradiated to the peripheral region 31.

[0024] The means for making the irradiation intensity of the laser light 62 irradiated to the central region 32 higher than the irradiation intensity of the laser light 62 irradiated to the outer peripheral region 31 is not limited to using the mask 70. For example, a structure of convex portions and / or concave portions (hereinafter, sometimes simply referred to as "structures") may be formed on the second surface 10b of the substrate 10. By forming the structures, the laser light 62 traveling to the substrate 10 is scattered by the structures, so that the irradiation intensity of the laser light 62 irradiated to the vicinity of the interface between the substrate 10 and the semiconductor layer 20 becomes smaller than when the structures are not formed. In addition, the irradiation intensity of the laser light 62 irradiated to the vicinity of the interface between the substrate 10 and the semiconductor layer 20 can be adjusted by adjusting the density, size, etc. of the structures. Specifically, as a first example, the density of the structures in the portion of the second surface 10b of the substrate 10 corresponding to the outer peripheral region 31 can be made higher than the density of the structures in the portion of the second surface 10b of the substrate 10 corresponding to the central region 32. The density is the ratio of the area of ​​the structures to the area of ​​the entire portion corresponding to the outer peripheral region 31 or the central region 32. As a second example, the size of the structures in a portion of the second surface 10b of the substrate 10 that corresponds to the peripheral region 31 can be made larger than the size of the structures in a portion of the second surface 10b of the substrate 10 that corresponds to the central region 32. As a third example, the structures can be formed only in the peripheral region 31 of the second surface 10b of the substrate 10.

[0025] When a plurality of structures are formed, there may be a flat surface between adjacent structures, or the structures may be connected to each other without a flat surface. The shape of the structures is, for example, a pyramidal shape such as a triangular pyramid, a columnar shape such as a quadrangular pyramid, or a dome shape such as a hemisphere. When the semiconductor layer 20 is rectangular and has a size of 1 mm×1 mm in a plan view, the maximum width of the structures in a plan view is, for example, 1 μm or more and 2 μm or less, and the height of the structures is, for example, 1 μm or more and 2 μm or less. The structures are formed, for example, by etching the substrate 10. In this case, the structures are configured as a part of the substrate 10. When a plurality of structures are formed, the sizes and heights of the structures may be the same or different. The structures may also have rough surfaces.

[0026] The laminate 30 may have a plurality of semiconductor layers 20 spaced apart from each other as semiconductor layers laminated on the substrate 10. In the example shown in Figs. 1 to 9, in the laminate 30, six semiconductor layers 20 are arranged in a matrix on one substrate 10. Of the six semiconductor layers 20, three semiconductor layers 20 are arranged in the X direction, and two semiconductor layers 20 are arranged in the Y direction. The laminate 30 has an outer periphery region 31 and a central region 32 corresponding to each semiconductor layer 20.

[0027] 1 to 9, in the peeling step, the regions including the multiple semiconductor layers 20 in the stacked body 30 are simultaneously irradiated with laser light 62. This makes it possible to peel the substrate 10 from the multiple semiconductor layers 20 simultaneously.

[0028] For example, when the semiconductor layer 20 contains gallium nitride, when the semiconductor layer 20 is irradiated with laser light 62, the gallium nitride present near the interface between the semiconductor layer 20 and the substrate 10 is decomposed into metallic gallium and nitrogen gas by the laser light. At this time, the opposing side surfaces of adjacent semiconductor layers 20 are open to the outside, so that the nitrogen gas can escape to the outside. Therefore, compared to when the semiconductor layers 20 are not separated (i.e., when there is one semiconductor layer 20 laminated on the substrate 10), the expansion and cracking of the semiconductor layer 20 due to the nitrogen gas can be reduced.

[0029] 1 to 9, the stacked body 30 includes a plurality of semiconductor layers 20, and the plurality of semiconductor layers 20 are simultaneously irradiated with laser light. However, this is not limited to the above, and laser light may be irradiated to each semiconductor layer 20. Furthermore, the stacked body 30 is not limited to including a plurality of semiconductor layers 20, and may include only one semiconductor layer 20.

[0030] The substrate 10, the semiconductor layer 20, and the covering layer 25 that constitute the laminate 30 will be described.

[0031] (substrate) The substrate 10 is a member on which the semiconductor layer 20 is laminated. The substrate 10 is, for example, transmissible to laser light 62. The substrate 10 includes, for example, at least one of sapphire and glass. The shape of the substrate 10 is, for example, a flat plate shape.

[0032] (Semiconductor layer) The semiconductor layer 20 includes, for example, an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer. The light-emitting layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting layer may have a structure such as a double heterojunction or a single quantum well (SQW), or may have a structure having a group of light-emitting layers such as a multiple quantum well (MQW). The emission peak wavelength of the light-emitting layer can be appropriately selected depending on the purpose. The light-emitting layer can be configured to be capable of emitting, for example, visible light or ultraviolet light. A semiconductor laminate including such a light-emitting layer can be, for example, In x Al y Ga 1-x-y This includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula N (0≦x, 0≦y, x+y≦1) are changed within their respective ranges.

[0033] The semiconductor layer 20 may have a structure including one or more light-emitting layers between an n-type semiconductor layer and a p-type semiconductor layer, or may have a structure in which a structure including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in order is repeated multiple times. When the semiconductor layer 20 includes multiple light-emitting layers, the multiple light-emitting layers may include light-emitting layers with different emission peak wavelengths or may include light-emitting layers with the same emission peak wavelength. The same emission peak wavelength includes a case where the emission peak wavelength varies within ±10 nm. The combination of emission peak wavelengths between the multiple light-emitting layers can be appropriately selected. For example, when the semiconductor layer 20 includes two light-emitting layers, the light-emitting layers can be selected from combinations such as blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. Each light-emitting layer may include multiple active layers with different emission peak wavelengths or multiple active layers with the same emission peak wavelength.

[0034] The semiconductor layer 20 is, for example, rectangular in plan view. The length of one side of the semiconductor layer 20 in plan view is preferably 200 μm or more and 2000 μm or less. If it is in the above-mentioned range, even if the semiconductor layer 20 is warped, the occurrence of peeling defects such as cracks of the semiconductor layer 20 can be further reduced.

[0035] (covering layer) The covering layer 25 is a member for holding the semiconductor layer 20. When the laminate 30 has a plurality of semiconductor layers 20, the covering layer 25 covers the side surface and the second surface 20b of the semiconductor layer 20 and can connect the adjacent semiconductor layers. As a result, when the substrate 10 is peeled off from the semiconductor layer 20, the covering layer 25 can hold each semiconductor layer 20. For example, a polyimide resin can be used as the material of the covering layer 25. Note that in the preparation step, the laminate 30 can be placed on the support via the covering layer 25. In this case, the covering layer 25 can also function as an adhesive member for bonding the semiconductor layer 20 of the laminate 30 to the support. The support can be used to reduce warping of the semiconductor layer 20 that occurs when the substrate 10 is peeled off from the semiconductor layer 20. For example, sapphire can be used as the support.

[0036] (laser light) The laser light irradiation device 60 may use a gas laser or a solid-state laser. For example, an excimer laser may be used as the gas laser. The laser light irradiation device 60 may irradiate, for example, a pulsed laser light 62. In this case, the pulse width is, for example, 20 nsec. The emission peak wavelength of the laser light 62 is, for example, 248 nm. The laser light 62 can be emitted from the laser light irradiation device 60, transmitted through the lens 81, and reach the mask 70. In addition, as the laser light 62, a top-hat type laser light having a substantially uniform irradiation intensity distribution can be used.

[0037] (Supporting process) The method for manufacturing the light emitting device according to the first embodiment may further include a supporting step, which is carried out after the peeling step.

[0038] 5, in the supporting step, a light-transmitting layer 82 is disposed on the surface of the semiconductor layer 20 from which the substrate 10 has been peeled off (i.e., the first surface 20a). The light-transmitting layer 82 includes, for example, a phosphor. The light-transmitting layer 82 is disposed on the first surface 20a of the semiconductor layer, for example, via an adhesive member. The light-transmitting layer 82 has, for example, a flat plate shape.

[0039] (Removal process) The method for manufacturing the light emitting device according to the first embodiment may further include a removing step, which is performed after the supporting step.

[0040] 6, in the removing step, the covering layer 25 is removed, whereby the electrode 21 disposed on the second surface 20b side of the semiconductor layer 20 is exposed.

[0041] (Cutting process) The method for manufacturing the light emitting device according to the first embodiment may further include a cutting step, which is performed after the removing step.

[0042] 7, in the cutting step, the light-transmitting layer 82 is cut. When cutting the light-transmitting layer 82, it is possible to cut at any position between adjacent semiconductor layers 20. For example, it is possible to cut at the center between adjacent semiconductor layers 20. By cutting the light-transmitting layer, it is possible to obtain a plurality of semiconductor layers 20 each having a light-transmitting layer 82 disposed thereon.

[0043] (Mounting process) The method for manufacturing the light emitting device according to the first embodiment may further include a mounting step. The mounting step is performed at least after the peeling step. The mounting step is performed, for example, after the cutting step.

[0044] As shown in FIG. 8, in the mounting step, the semiconductor layer 20 is mounted so that the surface (i.e., the second surface 20b) opposite to the surface (i.e., the first surface 20a) of the semiconductor layer 20 peeled off from the substrate 10 faces the upper surface 40a of the wiring substrate 40. At this time, in order to electrically connect the electrode 21 arranged on the second surface 20b of the semiconductor layer 20 to the wiring substrate 40, a conductive member can be arranged between the electrode 21 and the wiring substrate 40. The light emitting device 50 is manufactured by mounting the semiconductor layer 20 peeled off from the substrate 10 on the wiring substrate 40. In the mounting step shown in FIG. 8, the semiconductor layer 20 on which the light transmitting layer 82 is arranged is mounted on the wiring substrate 40. In the example shown in FIG. 8, one semiconductor layer 20 is mounted on the wiring substrate 40. However, this is not limited thereto, and a plurality of semiconductor layers 20 may be mounted on the wiring substrate 40. The wiring substrate 40 has an upper surface 40a and a lower surface 40b.

[0045] (Placement process) The method for manufacturing the light emitting device according to the first embodiment may further include a step of arranging, which is carried out after the step of mounting.

[0046] 9, in the disposing step, a light reflective member 83 is disposed to cover the side surface of the light transmitting layer 82 and the side surface of the semiconductor layer 20. The light reflective member 83 may be configured to include an organic material, may be configured to include an inorganic material, or may be configured to include both an organic material and an inorganic material. As the organic material, a resin may be used. As the inorganic material, for example, a mixture containing silica, boron nitride, and an alkali metal may be used.

[0047] (wiring board) The wiring board 40 has, for example, a base material and wiring arranged on the base material. The shape of the wiring board 40 is, for example, a flat plate shape.

[0048] The mask 70 will now be described in detail. FIG. 10 is a schematic plan view showing a mask used in the method for manufacturing a light emitting device according to this embodiment. FIG. 11 is a schematic enlarged plan view showing a part of a mask used in the method for manufacturing a light emitting device according to the embodiment. FIG. 12 is a schematic enlarged cross-sectional view showing a part of a mask used in the method for manufacturing a light emitting device according to the embodiment. FIG. 11 shows an enlarged view of a portion of FIG. FIG. 12 is a schematic cross-sectional view taken along line XII-XII shown in FIG.

[0049] The mask 70 has a first region 71 corresponding to the outer peripheral region 31 of the laminate 30 and a second region 72 corresponding to the central region 32 of the laminate 30. The first region 71 and the second region 72 are separated by a boundary BD2 which is a virtual line. The mask 70 is located in the first region 71 and has one or more first light-shielding parts 76 which block the laser light 62. In the example shown in FIG. 10 to FIG. 12, the mask 70 has a plurality of first light-shielding parts 76 which are located in the first region 71 and which block the laser light 62, and a plurality of second light-shielding parts 77 which are located in the second region 72 and which block the laser light 62. Note that even if a mask having the first light-shielding parts 76 and the second light-shielding parts 77 is used, the laser light 62 is irradiated to the regions located directly under the first light-shielding parts 76 and the second light-shielding parts 77 in the outer peripheral region 31 and the central region 32. This is because the light transmitted between the first light-shielding portion 76 and the second light-shielding portion 77 can spread to the area located directly below each light-shielding portion. Furthermore, if the first light-shielding portion 76 and the second light-shielding portion 77 do not completely block the laser light 62, a part of the laser light 62 passes through the first light-shielding portion 76 and the second light-shielding portion 77, and the laser light 62 is irradiated to the area located directly below each light-shielding portion.

[0050] 10 to 12, the outer shape of the first region 71 is rectangular in plan view. Similarly, the outer shape of the second region 72 (i.e., the outer shape defined by the boundary BD2 which is a virtual line) is rectangular. The outer shape of the first region 71 matches the outer shape of the outer peripheral region 31. The outer shape of the second region 72 matches the outer shape of the central region 32. In other words, the outer shape defined by the boundary BD2 which is a virtual line matches the outer shape defined by the boundary BD1 which is a virtual line.

[0051] The outer shape of the second region 72 is not limited to a rectangle, and may be, for example, a rectangle with four recessed corners. The outer shapes of the first region 71 and the second region 72 are not limited to a rectangle, and may be a polygon other than a rectangle, or may be a circle. The corners of the polygon may or may not be recessed. The sides of the polygon may be straight or curved. The outer shape of the first region 71 may be the same as or different from the outer shape of the second region 72. The same applies to the outer shape of the third region 73 described later.

[0052] 10 to 12, the first light-shielding portions 76 and the second light-shielding portions 77 are arranged in a matrix along the X direction and the Y direction in a plan view. The first light-shielding portions 76 and the second light-shielding portions 77 may be arranged in a staggered manner in a plan view. The arrangement of the first light-shielding portions 76 may be the same as or different from the arrangement of the second light-shielding portions 77.

[0053] 10 to 12, the first light-shielding portion 76 and the second light-shielding portion 77 have the same size in a plan view. That is, the width W1 of the first light-shielding portion 76 in a plan view is the same as the width W2 of the second light-shielding portion 77 in a plan view, and the area of ​​the first light-shielding portion 76 in a plan view is the same as the area of ​​the second light-shielding portion 77 in a plan view.

[0054] The width W1 and the width W2 are the maximum widths in the X direction as shown in Fig. 11. The width W1 and the width W2 are preferably, for example, 1 µm or more and 3 µm or less. The width W1 and the width W2 are preferably, for example, 1 / 400 times or more and 1 / 100 times or less of the outer shape of the semiconductor layer 20.

[0055] In addition, the first light-shielding portion 76 and the second light-shielding portion 77 are not limited to having the same size in a plan view, and may have different sizes in a plan view, so long as the irradiation intensity of the laser light 62 irradiated to the central region 32 can be made higher than the irradiation intensity of the laser light 62 irradiated to the outer circumferential region 31. For example, the first light-shielding portion 76 may be larger or smaller than the second light-shielding portion 77 in a plan view.

[0056] 10 to 12, the first light-shielding portion 76 and the second light-shielding portion 77 are circular in plan view. The shape of the first light-shielding portion 76 and the second light-shielding portion 77 in plan view is not limited to a circle and may be a rectangle or the like. The first light-shielding portion 76 and the second light-shielding portion 77 may have the same shape or different shapes in plan view.

[0057] In the example shown in FIG. 10 to FIG. 12, the first light shielding parts 76 are arranged at equal intervals in the X direction. That is, the interval D1x of the first light shielding parts 76 in the X direction is constant. Also, in the example shown in FIG. 10 to FIG. 12, the first light shielding parts 76 are arranged at equal intervals in the Y direction. That is, the interval D1y of the first light shielding parts 76 in the Y direction is constant. Also, in the example shown in FIG. 10 to FIG. 12, the interval D1x is the same as the interval D1y. If the intervals D1x and D1y are constant, it is possible to reduce unevenness in the irradiation intensity irradiated to the outer circumferential region 31. Note that the interval D1x does not have to be constant. The interval D1y does not have to be constant. The interval D1x may be different from the interval D1y. For example, the average value of the intervals D1x and D1y is set as the interval D1 between adjacent first light shielding parts 76. The “distance” here refers to the distance between the centers of adjacent first light shielding portions 76. The distance D1 is, for example, 4 μm or more and 6 μm or less. The distance D1 is, for example, 1 / 300 times or more and 1 / 200 times or less of the outer shape of the semiconductor layer 20.

[0058] In the example shown in FIG. 10 to FIG. 12, the second light shielding parts 77 are arranged at equal intervals in the X direction. That is, the interval D2x of the second light shielding parts 77 in the X direction is constant. Also, in the example shown in FIG. 10 to FIG. 12, the second light shielding parts 77 are arranged at equal intervals in the Y direction. That is, the interval D2y of the second light shielding parts 77 in the Y direction is constant. Also, in the example shown in FIG. 10 to FIG. 12, the interval D2x is the same as the interval D2y. If the intervals D2x and D2y are constant, it is possible to reduce unevenness in the irradiation intensity irradiated to the central region 32. Note that the interval D2x does not have to be constant. The interval D2y does not have to be constant. The interval D2x may be different from the interval D2y. For example, the average value of the intervals D2x and D2y is set as the interval D2 between adjacent second light shielding parts 77. The “distance” here refers to the distance between the centers of adjacent second light shielding portions 77. The distance D2 is, for example, not less than 6 μm and not more than 10 μm. The distance D2 is, for example, not less than 1 / 200 and not more than 1 / 100 of the outer shape of the semiconductor layer 20.

[0059] In the example shown in Figs. 10 to 12, the interval D2 is wider than the interval D1. In the example shown in Figs. 10 to 12, the density of the second light-shielding portions 77 in the second region 72 is lower than the density of the first light-shielding portions 76 in the first region 71. The density is the ratio of the area of ​​each light-shielding portion to the total area of ​​each region. This makes it possible to make the degree of light-shielding in the first region 71 greater than the degree of light-shielding in the second region 72, and to make the irradiation intensity of the laser light 62 transmitted through the second region 72 and irradiated to the central region 32 greater than the irradiation intensity of the laser light 62 transmitted through the first region 71 and irradiated to the outer circumferential region 31.

[0060] In the example shown in Figs. 10 to 12, the mask 70 has a light-transmitting member 75, and a first light-shielding portion 76 and a second light-shielding portion 77 arranged on the light-transmitting member 75. The light-transmitting member 75 has a first surface 75a facing the laminate 30, and a second surface 75b located on the opposite side to the first surface 75a. The first light-shielding portion 76 can be arranged on at least one of the first surface 75a and the second surface 75b. The second light-shielding portion 77 can be arranged on at least one of the first surface 75a and the second surface 75b. In the example shown in Figs. 10 to 12, the first light-shielding portion 76 and the second light-shielding portion 77 are arranged on the first surface 75a. As a result, light that passes between adjacent first light-shielding portions 76 and between adjacent second light-shielding portions 77 does not pass through the translucent member 75, making it easier to emit light in the desired direction compared to when the first light-shielding portions 76 and the second light-shielding portions 77 are arranged on the second surface 75b.

[0061] In the example shown in FIG. 10, the mask 70 has an inner light-shielding portion 710 including a first light-shielding portion 76 and a second light-shielding portion 77, and an outer light-shielding portion 720 having an opening 74. The inner light-shielding portion 710 is disposed in the opening 74. The mask 70 blocks the laser light irradiated to the outer light-shielding portion 720 and the light irradiated to the inner light-shielding portion 710 among the laser light emitted from the laser light irradiation device 60. When the laser light has a top-hat type irradiation intensity distribution, the irradiation intensity distribution has a region (hereinafter, sometimes referred to as "region A") in which the irradiation intensity is approximately uniform in the center, and has regions (hereinafter, sometimes referred to as "region B") in which the irradiation intensity is lower than that in the center at both ends. By irradiating the laser light of the region A into the opening 74 of the mask 70 (i.e., preventing the laser light of the region B from irradiating into the opening 74 of the mask 70), the irradiation intensity irradiated into the opening 74 of the mask 70 can be made approximately uniform. This makes it possible to reduce unevenness in the irradiation intensity within the opening 74.

[0062] In the mask 70, the transmittance of the outer light-shielding portion 720 to the laser light is, for example, 0%. As a result, the light emitted from the laser light irradiation device 60 is completely blocked by the outer light-shielding portion 720 of the mask 70, and can be transmitted only through the opening 74.

[0063] In the mask 70, the region outside the opening 74, like the region inside the opening 74, can have a light-transmitting member 75 and an outer light-shielding portion 720 on a first surface 75a and / or a second surface 75b of the light-transmitting member 75. The outer light-shielding portion 720 may be made of the same material as the first light-shielding portion 76 and the second light-shielding portion 77, or may be made of a different material.

[0064] The mask 70 is not limited to one in which a light-transmitting member 75 is used as a base material and the light-shielding portions of the first light-shielding portion 76 and the second light-shielding portion 77 are provided on the light-transmitting member 75, but may be one in which a light-shielding member is used as a base material and a light-transmitting portion such as a hole is provided in the light-shielding member. In this case, the light-shielding member corresponds to the first light-shielding portion and the second light-shielding portion.

[0065] (Translucent member) The light-transmitting member 75 is a member that supports the first light-shielding portion 76 and the second light-shielding portion 77. The light-transmitting member 75 is capable of transmitting the laser light 62. The light-transmitting member 75 only needs to be capable of transmitting at least a portion of the laser light 62. The light-transmitting member 75 has a transmittance of, for example, 90% for the laser light 62. The light-transmitting member 75 may be made of, for example, glass. The light-transmitting member 75 has, for example, a flat plate shape.

[0066] (First light-shielding part, second light-shielding part) The first light-shielding portion 76 and the second light-shielding portion 77 can block the laser light 62. The first light-shielding portion 76 and the second light-shielding portion 77 can block at least a part of the laser light 62. When the first light-shielding portion 76 and the second light-shielding portion 77 are provided on the light-transmitting member 75, the transmittance of the first light-shielding portion 76 and the second light-shielding portion 77 to the laser light 62 is lower than the transmittance of the light-transmitting member 75 to the laser light 62. When a light-transmitting portion such as a hole is provided on the light-shielding member, the transmittance of the first light-shielding portion 76 and the second light-shielding portion 77 to the laser light 62 is lower than the transmittance of the light-transmitting portion (for example, the atmosphere) to the laser light 62. The transmittance of the first light-shielding portion 76 and the second light-shielding portion 77 to the laser light 62 is, for example, 50%. The first light-shielding portion 76 and the second light-shielding portion 77 may be a metal film such as chromium, or may be a dielectric multilayer film.

[0067] In the example shown in FIG. 10 to FIG. 12, the transmittance of the first light shielding portion 76 for the laser light 62 is the same as the transmittance of the second light shielding portion 77 for the laser light 62. The transmittance of the second light shielding portion 77 for the laser light 62 may be higher than the transmittance of the first light shielding portion 76 for the laser light 62. For example, the first light shielding portion 76 is formed using a material having a first transmittance for the laser light 62, and the second light shielding portion 77 is formed using a material having a second transmittance for the laser light 62 higher than the first transmittance. In addition, by forming the first light shielding portion 76 with a first thickness and forming the second light shielding portion 77 with a second thickness thinner than the first thickness, the transmittance of the second light shielding portion 77 for the laser light 62 can be made higher than the transmittance of the first light shielding portion 76 for the laser light 62. Furthermore, the transmittance of the second light-shielding portion 77 to the laser light 62 may be made higher than the transmittance of the first light-shielding portion 76 to the laser light 62 by combining the above materials and thicknesses.

[0068] Furthermore, the transmittance of the second light shielding portions 77 to the laser light 62 may be lower than the transmittance of the first light shielding portions 76 to the laser light 62. For example, the density of the second light shielding portions 77 in the second region 72 can be made sufficiently lower than the density of the first light shielding portions 76 in the first region 71. As a result, even if the transmittance of the second light shielding portions 77 to the laser light 62 is made lower than the transmittance of the first light shielding portions 76 to the laser light 62, the degree of light shielding in the first region 71 can be made higher than the degree of light shielding in the second region 72.

[0069] 10 to 12, the second light-shielding portion 77 is disposed in the second region 72. However, this is not limited thereto, and the second light-shielding portion 77 does not have to be disposed in the second region 72. When the second light-shielding portion 77 is not disposed in the second region 72, the portion of the mask corresponding to the second region 72 may be constituted only by the light-transmitting member 75, or may be constituted by a hole penetrating the light-transmitting member 75.

[0070] FIG. 13 is a schematic plan view showing a laminate in a method for manufacturing a light emitting device according to a modified example of the embodiment. FIG. 14 is a schematic plan view showing a mask used in a method for manufacturing a light emitting device according to a modified example of the embodiment. FIG. 15 is a schematic enlarged plan view showing a part of a mask used in a method for manufacturing a light emitting device according to a modified example of the embodiment. FIG. 15 shows an enlarged view of a part of FIG.

[0071] 13, the laminate 30 may further have an intermediate region 33 located between the central region 32 and the outer peripheral region 31 in a plan view. The intermediate region 33 is located more inward than the outer peripheral region 31. The intermediate region 33 is located more outward than the central region 32. The outer peripheral region 31 and the intermediate region 33 are separated by a boundary BD3, which is an imaginary line. The intermediate region 33 and the central region 32 are separated by a boundary BD4, which is an imaginary line.

[0072] In the example shown in FIG. 13, the outer shape of the outer peripheral region 31 is rectangular in plan view. Similarly, the outer shape of the intermediate region 33 (i.e., the outer shape defined by the boundary BD3, which is a virtual line) and the outer shape of the central region (i.e., the outer shape defined by the boundary BD4, which is a virtual line) are rectangular. The boundary BD3 and the boundary BD4 are located at positions that divide the area between the outer peripheral edge 31e of the outer peripheral region 31 and the center 32c of the central region 32 into thirds. That is, for example, the distance L3 between the outer peripheral edge 31e of the outer peripheral region 31 and the boundary BD3, the distance L4 between the boundary BD3 and the boundary BD4, and the distance L5 between the center 32c of the central region 32 and the boundary BD4 are the same. The distances L3, L4, and L5 may be different from each other. The distance L3 may be shorter than the distance L4 or longer than the distance L4. The distance L3 may be shorter than the distance L5 or longer than the distance L5. The distance L4 may be shorter than the distance L5 or may be longer than the distance L5.

[0073] 14 and 15, the mask 70 may further have a third region 73 corresponding to the intermediate region 33 in a plan view. The first region 71 and the third region 73 are separated by a boundary BD5 which is a virtual line. The second region 72 and the third region 73 are separated by a boundary BD6 which is a virtual line. The mask 70 is disposed so that the third region 73 overlaps with the intermediate region 33 in a plan view.

[0074] 14 and 15, the outer shape of the first region 71 is rectangular in plan view. Similarly, the outer shape of the second region 72 (i.e., the outer shape defined by the boundary BD5 which is a virtual line) and the outer shape of the third region (i.e., the outer shape defined by the boundary BD6 which is a virtual line) are rectangular.

[0075] 14, the mask 70 has an inner light-shielding portion 710 including a first light-shielding portion 76, a second light-shielding portion 77, and a third light-shielding portion 78, and an outer light-shielding portion 720 having an opening 74. The inner light-shielding portion 710 is disposed within the opening 74.

[0076] 13 to 15, in the peeling step, the first region 71, the second region 72, and the third region 73 are irradiated with the laser light 62 at the same irradiation intensity. The irradiation intensity of the laser light 62 transmitted through the second region 72 and irradiated to the central region 32 is set higher than the irradiation intensity of the laser light 62 transmitted through the third region 73 and irradiated to the intermediate region 33, and the irradiation intensity of the laser light 62 transmitted through the third region 73 and irradiated to the intermediate region 33 is set higher than the irradiation intensity of the laser light 62 transmitted through the first region 71 and irradiated to the outer circumferential region 31.

[0077] Specifically, by using a mask, the degree of light blocking in the third region 73 can be made greater than the degree of light blocking in the second region 72, so that the irradiation intensity of the laser light 62 transmitted through the second region 72 and irradiated to the central region 32 can be made greater than the irradiation intensity of the laser light 62 transmitted through the third region 73 and irradiated to the intermediate region 33. Also, by making the degree of light blocking in the first region 71 greater than the degree of light blocking in the third region 73, the irradiation intensity of the laser light 62 transmitted through the third region 73 and irradiated to the intermediate region 33 can be made greater than the irradiation intensity of the laser light 62 transmitted through the first region 71 and irradiated to the outer circumferential region 31. This can reduce the occurrence of peeling defects such as cracking of the semiconductor layer 20.

[0078] The mask 70 is located in the third region 73 and has a plurality of third light-shielding portions 78 that block the laser light 62. Examples of the arrangement, size, and shape of the third light-shielding portions 78 may be the same as the examples of the arrangement, size, and shape of the first light-shielding portions 76 and the second light-shielding portions 77 described above, and therefore a description thereof will be omitted.

[0079] 13 to 15, the interval D3 between adjacent third light-shielding portions 78 is wider than the interval D1 and narrower than the interval D2. In the example shown in FIGS. 13 to 15, the density of the third light-shielding portions 78 in the third region 73 is lower than the density of the first light-shielding portions 76 in the first region 71 and higher than the density of the second light-shielding portions 77 in the second region 72. This makes it possible to make the degree of light-shielding in the third region 73 higher than the degree of light-shielding in the second region 72, and to make the irradiation intensity of the laser light 62 transmitted through the second region 72 and irradiated to the central region 32 higher than the irradiation intensity of the laser light 62 transmitted through the third region 73 and irradiated to the intermediate region 33. The degree of light blocking in the first region 71 can be made greater than the degree of light blocking in the third region 73, and the irradiation intensity of the laser light 62 that passes through the third region 73 and is irradiated to the intermediate region 33 can be made greater than the irradiation intensity of the laser light 62 that passes through the first region 71 and is irradiated to the peripheral region 31.

[0080] FIG. 16 is a schematic enlarged plan view showing a part of a mask used in a method for manufacturing a light emitting device according to another modified example of the embodiment. In the example shown in FIG. 16, the interval D2 between adjacent second light shielding portions 77 is the same as the interval D1 between adjacent first light shielding portions 76.

[0081] 16, the transmittance of the second light shielding portion 77 to the laser light 62 is higher than the transmittance of the first light shielding portion 76 to the laser light 62. As described above, for example, by adjusting the material or thickness, the transmittance of the second light shielding portion 77 to the laser light 62 can be made higher than the transmittance of the first light shielding portion 76 to the laser light 62.

[0082] By making the transmittance of the second light-shielding portion 77 to the laser light 62 higher than the transmittance of the first light-shielding portion 76 to the laser light 62, even if the interval D2 between adjacent second light-shielding portions 77 is the same as the interval D1 between adjacent first light-shielding portions 76, the degree of light-shielding in the first region 71 can be made higher than the degree of light-shielding in the second region 72. This makes it possible to make the irradiation intensity of the laser light 62 transmitted through the second region 72 and irradiated to the central region 32 higher than the irradiation intensity of the laser light 62 transmitted through the first region 71 and irradiated to the outer circumferential region 31.

[0083] FIG. 17 is a schematic enlarged plan view showing a part of a mask used in a method for manufacturing a light emitting device according to another modified example of the embodiment. 17, the first region 71 of the mask 70 may have a corner portion 71a including a corner 71x and a side portion 71b located between the two corner portions 71a. The corner portion 71a is a region defined by a virtual line that is an extension of the boundary line between the first region 71 and the second region 72.

[0084] In the example shown in FIG. 17, a corner shading portion 76a is provided at the corner portion 71a, and a side shading portion 76b is provided at the side portion 71b. In the example shown in FIG. 17, the corner shading portions 76a are arranged at equal intervals (interval D1ax) in the X direction, and at equal intervals (interval D1ay) in the Y direction. For example, the average value of the intervals D1ax and D1ay is set to the interval D1a between adjacent corner shading portions 76a. In the example shown in FIG. 17, the side shading portions 76b are arranged at equal intervals (interval D1bx) in the X direction, and at equal intervals (interval D1by) in the Y direction. For example, the average value of the intervals D1bx and D1by is set to the interval D1b between adjacent side shading portions 76b.

[0085] In the example shown in FIG. 17, the interval D1a is narrower than the interval D1b. In the example shown in FIG. 17, the density of the corner light-shielding portion 76a at the corner portion 71a is higher than the density of the side light-shielding portion 76b at the side portion 71b. This makes it possible to make the degree of light-shielding at the corner portion 71a greater than the degree of light-shielding at the side portion 71b, and to make the irradiation intensity of the laser light 62 irradiated to the position corresponding to the corner portion 71a of the laminate 30 lower than the irradiation intensity of the laser light 62 irradiated to the position corresponding to the side portion 71b of the laminate 30. As a result, it is possible to reduce the difference in timing between the peeling in the outer peripheral region 31 and the peeling in the central region, and to reduce the occurrence of peeling defects such as cracking of the semiconductor layer 20.

[0086] 17, the interval D1b is narrower than the interval D2. In the example shown in FIG. 17, the density of the side light-shielding portions 76b in the side portion 71b is higher than the density of the second light-shielding portions 77 in the second region 72, for example. This makes it possible to make the degree of light-shielding in the side portion 71b higher than the degree of light-shielding in the second region 72, and to make the irradiation intensity of the laser light 62 irradiated to the position corresponding to the side portion 71b of the laminate 30 lower than the irradiation intensity of the laser light 62 irradiated to the position corresponding to the central region 32. As a result, it is possible to reduce the difference in timing between the peeling in the outer peripheral region 31 and the peeling in the central region, and to reduce the occurrence of peeling defects such as cracking of the semiconductor layer 20.

[0087] In the above example, the density of the light-shielding parts in the mask 70 is gradually decreased from the outer periphery to the center of the mask 70. The change in density of the light-shielding parts in the mask 70 may be in two stages, or may be in three or more stages. The greater the number of stages, the more likely it is that peeling defects will be reduced. The density of the light-shielding parts in the mask 70 may be continuously decreased from the outer periphery to the center of the mask 70.

[0088] <Removal method> The peeling method according to the embodiment includes the preparing step and the peeling step in the above-described manufacturing method for the light emitting device.

[0089] More specifically, in the peeling method according to the embodiment, a laminate 30 including a substrate 10 and a semiconductor layer 20 laminated on the substrate 10, and including an outer circumferential region 31 and a central region 32 located inside the outer circumferential region 31 in a plan view, is irradiated with laser light 62 to peel off the substrate 10 from the semiconductor layer 20. At this time, the central region 32 and the outer circumferential region 31 are irradiated with the laser light 62 simultaneously. In addition, the irradiation intensity of the laser light 62 irradiated to the central region 32 is set higher than the irradiation intensity of the laser light 62 irradiated to the outer circumferential region 31.

[0090] The peeling method according to the embodiment can be applied to the preparing steps and peeling steps in the manufacturing method for the light emitting device shown in the above-mentioned FIGS. 1 to 4 and 10 to 16.

[0091] By making the irradiation intensity of the laser light 62 irradiated to the central region 32 higher than the irradiation intensity of the laser light 62 irradiated to the peripheral region 31, it is possible to reduce the difference in timing between peeling in the peripheral region 31 and peeling in the central region 32. As a result, it is possible to reduce the occurrence of peeling defects such as cracking of the semiconductor layer 20.

[0092] The embodiment may include the following features.

[0093] (Configuration 1) A step of preparing a laminate having a substrate and a semiconductor layer laminated on the substrate, the laminate having, in a plan view, a peripheral region and a central region located inside the peripheral region; irradiating the laminate with laser light to peel off the substrate from the semiconductor layer; Equipped with In the peeling step, the central region and the outer circumferential region are simultaneously irradiated with the laser light; A method for manufacturing a light emitting device, wherein the irradiation intensity of the laser light irradiated to the central region is higher than the irradiation intensity of the laser light irradiated to the peripheral region.

[0094] (Configuration 2) In the peeling step, a mask having a first region corresponding to the outer periphery region and a second region corresponding to the central region is disposed on a side of the laminate where the laser light is irradiated; irradiating the first region and the second region with the laser light at the same irradiation intensity; The method for manufacturing a light emitting device described in configuration 1, wherein the irradiation intensity of the laser light that passes through the second region and is irradiated to the central region is higher than the irradiation intensity of the laser light that passes through the first region and is irradiated to the peripheral region.

[0095] (Configuration 3) 3. The method for manufacturing a light emitting device according to claim 2, wherein the mask is located in the first region and has one or more first light shielding portions that block the laser light.

[0096] (Configuration 4) the mask is located in the first region and has a plurality of first light-shielding portions that block the laser light, and a plurality of second light-shielding portions that are located in the second region and block the laser light, the first light-shielding portion and the second light-shielding portion have the same size in a plan view, 4. The method for manufacturing a light emitting device according to configuration 3, wherein a distance between adjacent second light shielding portions is wider than a distance between adjacent first light shielding portions.

[0097] (Configuration 5) the mask includes a light-transmitting member having a first surface facing the laminate and a second surface located on the opposite side to the first surface; 5. The method for manufacturing a light emitting device according to claim 4, wherein the first light shielding portion and the second light shielding portion are disposed on the first surface.

[0098] (Configuration 6) The stack includes a plurality of the semiconductor layers disposed on the substrate and spaced apart from one another; 6. The method for producing a light emitting device according to any one of configurations 1 to 5, wherein in the peeling step, the laser light is simultaneously irradiated onto a plurality of regions of the laminate including the semiconductor layers.

[0099] (Configuration 7) The laminate has an intermediate region located between the central region and the outer peripheral region in a plan view, the mask has a third region corresponding to the intermediate region in a plan view, In the peeling step, the first region, the second region, and the third region are irradiated with the laser light at the same irradiation intensity; an irradiation intensity of the laser light transmitted through the second region and irradiated onto the central region is higher than an irradiation intensity of the laser light transmitted through the third region and irradiated onto the intermediate region; The method for manufacturing a light emitting device according to any one of configurations 2 to 5, wherein the irradiation intensity of the laser light transmitted through the third region and irradiated to the intermediate region is higher than the irradiation intensity of the laser light transmitted through the first region and irradiated to the peripheral region.

[0100] (Configuration 8) The semiconductor layer may be mounted on a wiring substrate after the peeling step. The method for manufacturing a light emitting device according to any one of configurations 1 to 7, wherein in the mounting step, the semiconductor layer is mounted so that the surface of the semiconductor layer opposite to the surface peeled off from the substrate faces an upper surface of the wiring substrate.

[0101] (Configuration 9) A method for peeling off the substrate from the semiconductor layer by irradiating a laser beam to a laminate having a substrate and a semiconductor layer laminated on the substrate, the laminate having, in a plan view, an outer periphery region and a central region located inside the outer periphery region, the method comprising: The central region and the peripheral region are simultaneously irradiated with the laser light; A peeling method, wherein an irradiation intensity of the laser light irradiated to the central region is higher than an irradiation intensity of the laser light irradiated to the peripheral region.

[0102] As described above, according to the embodiment, a method for manufacturing a light emitting device and a method for peeling the same that can improve yield are provided.

[0103] The above-described embodiments are examples of the present invention, and the present invention is not limited to these embodiments. For example, the present invention also includes the above-described embodiments in which some components or steps are added, deleted, or changed. In addition, the above-described embodiments can be implemented in combination with each other. [Industrial Applicability]

[0104] The present invention can be suitably used in the manufacture of LEDs, etc. [Explanation of symbols]

[0105] 10: Substrate 10a: 1st page 10b: 2nd side 20: Semiconductor layer 20a: Side 1 20b: 2nd side 20c: center 20e: Outer edge 21: Electrode 25: Covering layer 30: Laminate 31: Outer area 31e: Outer edge 32: Central area 32c:center 33: Intermediate area 40: Wiring board 40a:Top surface 40b: Bottom surface 50: Light emitting device 60: Laser light irradiation device 62: Laser light 70: Mask 71:First area 71a: Corner 71b: Edge 71x: corner 72:Second area 73:Third area 74: Opening 75: Translucent material 75a: 1st page 75b: Side 2 76: First light shielding part 76a: Corner light shielding part 76b: Side light shielding part 77: Second light shielding part 78: Third light shielding section 710: Inner light shielding part 720:Outer light shielding part 81: Lens 82: Translucent layer 83: Light-reflective material BD1, BD2, BD3, BD4, BD5, BD6: Boundary D1, D1a, D1ax, D1ay, D1b, D1bx, D1by, D1x, D1y, D2, D2x, D2y, D3: Interval L1, L2, L3, L4, L5: Distance W1, W2: Width

Claims

1. A step of preparing a laminate having a substrate and a semiconductor layer laminated on the substrate, the laminate having, in a plan view, a peripheral region and a central region located inside the peripheral region; irradiating the laminate with laser light to peel off the substrate from the semiconductor layer; Equipped with In the peeling step, the central region and the outer circumferential region are simultaneously irradiated with the laser light; A method for manufacturing a light emitting device, wherein the irradiation intensity of the laser light irradiated to the central region is higher than the irradiation intensity of the laser light irradiated to the peripheral region.

2. In the peeling step, a mask having a first region corresponding to the outer periphery region and a second region corresponding to the central region is disposed on a side of the laminate where the laser light is irradiated; irradiating the first region and the second region with the laser light at the same irradiation intensity; The method for manufacturing a light emitting device according to claim 1 , wherein an irradiation intensity of the laser light transmitted through the second region and irradiated onto the central region is higher than an irradiation intensity of the laser light transmitted through the first region and irradiated onto the peripheral region.

3. The method for manufacturing a light emitting device according to claim 2 , wherein the mask has one or more first light shielding portions located in the first region and blocking the laser light.

4. the mask is located in the first region and has a plurality of first light-shielding portions that block the laser light, and a plurality of second light-shielding portions that are located in the second region and block the laser light, the first light-shielding portion and the second light-shielding portion have the same size in a plan view, The method for manufacturing a light emitting device according to claim 3 , wherein a distance between adjacent second light shielding portions is wider than a distance between adjacent first light shielding portions.

5. the mask includes a light-transmitting member having a first surface facing the laminate and a second surface located on an opposite side to the first surface; The method for manufacturing a light emitting device according to claim 4 , wherein the first light shielding portion and the second light shielding portion are disposed on the first surface.

6. The stack includes a plurality of the semiconductor layers disposed on the substrate and spaced apart from one another; 6. The method for manufacturing a light emitting device according to claim 1, wherein in the peeling step, the laser light is irradiated simultaneously onto a plurality of regions including the semiconductor layers in the laminate.

7. The laminate has an intermediate region located between the central region and the outer peripheral region in a plan view, the mask has a third region corresponding to the intermediate region in a plan view, In the peeling step, the first region, the second region, and the third region are irradiated with the laser light at the same irradiation intensity; an irradiation intensity of the laser light transmitted through the second region and irradiated onto the central region is higher than an irradiation intensity of the laser light transmitted through the third region and irradiated onto the intermediate region; The method for manufacturing a light emitting device described in any one of claims 2 to 5, wherein the irradiation intensity of the laser light that transmits through the third region and is irradiated to the intermediate region is higher than the irradiation intensity of the laser light that transmits through the first region and is irradiated to the peripheral region.

8. The semiconductor layer may be mounted on a wiring substrate after the peeling step. The method for manufacturing a light emitting device according to claim 1 , wherein in the mounting step, the semiconductor layer is mounted such that a surface of the semiconductor layer opposite to a surface peeled off from the substrate faces an upper surface of the wiring substrate.

9. A method for peeling off the substrate from the semiconductor layer by irradiating a laser beam to a laminate having a substrate and a semiconductor layer laminated on the substrate, the laminate having, in a plan view, an outer periphery region and a central region located inside the outer periphery region, the method comprising: The central region and the peripheral region are simultaneously irradiated with the laser light; A peeling method, wherein an irradiation intensity of the laser light irradiated to the central region is higher than an irradiation intensity of the laser light irradiated to the peripheral region.

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