Display device

Abstract

To increase definition of a display device having a photodetection function.SOLUTION: A display device includes a light emitting device and a light reception / emitting device. The light emitting device includes a first pixel electrode, a first light emitting layer, and a common electrode, the light reception / emitting device includes a second pixel electrode, a second light emitting layer, an active layer, and a common electrode, the active layer includes an organic compound, the first light emitting layer is positioned between the first pixel electrode and the common electrode, the second light emitting layer and the active layer are positioned between the second pixel electrode and the common electrode, the light emitting device includes a function of emitting light with a first color, and the light reception / emitting device includes a function of emitting light with a second color and a function of receiving light with a first color. The light reception / emitting device can impart a light reception function to pixels without increasing the number of sub-pixels included in the pixels. It can also impart a light reception function to pixels without decreasing definition of the display device and an opening ratio of the respective sub-pixels.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device. The light emitting device has a light receiving device (also called a light receiving / emitting element) and a light emitting device (also called a light emitting element). The present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), These driving methods and manufacturing methods can be given as examples. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, the use of large display devices Examples include home television equipment (also called television or television receiver), digital Digital Signage, PID (Public Information Display) c Information Display) and other mobile information terminals. In response to this, the development of smartphones and tablet devices equipped with touch panels is underway.

[0004] As a display device, for example, a light-emitting device having a light-emitting device has been developed. Electroluminescence (hereinafter referred to as EL) phenomenon The light-emitting devices used (also called EL devices or EL elements) can be easily made thin and lightweight. The device has the following features: it can respond quickly to input signals; it can be driven by a low-voltage DC power supply; For example, Patent Document 1 describes an organic EL device (organic A flexible light-emitting device using a light-emitting diode (also called an EL element) is disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having a light detection function. An object of one embodiment of the present invention is to improve the resolution of a display device having a light detection function. An object of one embodiment of the present invention is to provide a highly convenient display device. An object of the present invention is to provide a multi-function display device. An object of one embodiment of the present invention is to provide a novel display device. One of our goals is to provide

[0007] An object of one embodiment of the present invention is to improve the manufacturing yield of a display device having a light detection function. One object of one embodiment of the present invention is to reduce the number of steps for manufacturing a display device having a light detection function. One embodiment of the present invention is to reduce the manufacturing cost of a display device having a light detection function. This is one of the challenges.

[0008] Note that the description of these problems does not preclude the existence of other problems. However, it is not necessary to solve all of these problems. It is possible to extract other issues from the description in the section. [Means for solving the problem]

[0009] A display device according to one embodiment of the present invention includes a light-emitting device and a light-receiving and light-emitting device. The light emitting device has a first pixel electrode, a first light emitting layer, and a common electrode. The pixel electrode includes a second pixel electrode, a second light-emitting layer, an active layer, and a common electrode. The active layer includes an organic compound. The first light-emitting layer is located between the first pixel electrode and the common electrode. The active layer is located between the second pixel electrode and the common electrode, respectively. The light receiving and emitting device has a function of emitting light of a first color. The light receiving and emitting device has a function of emitting light of a second color. and a function of receiving light of a first color.

[0010] A display device according to one embodiment of the present invention includes, for example, m (m is an integer of 2 or more) light-emitting devices; (n is an integer greater than m) light receiving and emitting devices, and m and n satisfy n=2m. It is preferable to do so.

[0011] A display device according to one embodiment of the present invention includes p (p is an integer of 2 or more) first light-emitting devices and q (q is an integer equal to or greater than 2) second light-emitting devices; and The first light emitting device has a first pixel electrode, a first The light emitting device has a second pixel electrode, a second light emitting layer, an active layer, and a common electrode. The second light-emitting device has a third pixel electrode, a third light-emitting layer, and a common electrode. and a common electrode. The active layer includes an organic compound. The first light-emitting layer includes a first pixel electrode. The second light-emitting layer and the active layer are respectively disposed between the second pixel electrode and the common electrode. and the common electrode. The third light-emitting layer is located between the third pixel electrode and the common electrode. The first light-emitting device has a function of emitting light of a first color. The second light-emitting device has a function of emitting light of a second color and a function of receiving light of the first color. The device has a function of emitting light of a third color. It is preferable that p and r satisfy r=2p. It is preferable that p, q, and r satisfy r=p+q.

[0012] The light emitting / receiving device is a laminate of a second pixel electrode, an active layer, a second light emitting layer, and a common electrode in this order. Alternatively, the light emitting / receiving device may have a structure including a second pixel electrode, a second light emitting layer, It may have a structure in which an active layer and a common electrode are laminated in this order.

[0013] The light emitting and receiving device preferably further comprises a buffer layer. The buffer layer comprises a second It is preferable that the buffer layer is located between the light-emitting layer and the active layer. The buffer layer is a hole transport layer. is preferred.

[0014] The light emitting device and the light receiving and emitting device preferably further include a common layer. , located between the first pixel electrode and the common electrode, and between the second pixel electrode and the common electrode It is preferable.

[0015] The display device preferably further comprises a resin layer, a light-shielding layer, and a substrate. The optical layers are preferably each located between a common electrode and a substrate.

[0016] The resin layer preferably has an opening overlapping the light emitting / receiving device. The light-shielding layer is preferably disposed between the common electrode and the resin layer. The light-shielding layer preferably has a portion exposed at the opening and a portion exposed at the opening. It is preferable that the resin layer is at least partially covered with the insulating layer.

[0017] Alternatively, the resin layer is preferably provided in an island shape and has a portion overlapping the light emitting device. It is preferable that the light-shielding layer has a portion located between the common electrode and the resin layer. At least a part of the light passing through the plate is incident on the light receiving / emitting device without passing through the resin layer. It is preferable that the light-shielding layer covers at least a part of the side surface of the resin layer.

[0018] The display device preferably further comprises an adhesive layer. The adhesive layer is disposed between the common electrode and the substrate. The resin layer and the light-shielding layer are preferably located between the adhesive layer and the substrate. The adhesive layer has a first portion overlapping the light emitting / receiving device and a second portion overlapping the light emitting device. and an overlapping second portion. The first portion is thicker than the second portion. It is preferred.

[0019] The display device has a plurality of units each having a plurality of light receiving and emitting devices, and captures an image for each unit. It is preferable to have a mode in which an image is captured by each light receiving and emitting device, and a mode in which an image is captured by each light receiving and emitting device. The display device has a plurality of light receiving and emitting devices, and is in a mode in which all the light receiving and emitting devices are used for imaging. It is preferable that the camera has a mode in which some of the light receiving and emitting devices are used for imaging, and a mode in which some of the light receiving and emitting devices are used for imaging.

[0020] A display device according to one embodiment of the present invention includes a first light-emitting device, a second light-emitting device, a first light-receiving device, and a second light-emitting device. The display device has a first mode for displaying, a second light receiving and emitting device, and a second light receiving and emitting device. The first mode has a second mode for capturing an image, and the third mode for simultaneously capturing an image and displaying the image. A light emitting device, a second light emitting device, a first light receiving / emitting device, and a second light receiving / emitting device In the first mode, the first light emitting device, the second light emitting device, and the The first light receiving and emitting device and the second light receiving and emitting device each emit light to perform display. In the second mode, the first light-emitting device and the second light-emitting device each emit light, The first light receiving and emitting device and the second light receiving and emitting device receive light, respectively, to thereby capture an image. In the third mode, the first light emitting device, the second light emitting device, and the first light receiving and emitting device The first device emits light and the second device receives the light, allowing both display and imaging to be performed simultaneously. cormorant.

[0021] The display device according to one embodiment of the present invention preferably has flexibility.

[0022] One aspect of the present invention is a display device having any one of the above configurations, Flexible Printed Circuit (hereinafter referred to as FPC) or is equipped with a TCP (Tape Carrier Package) or other connector. Module, or COG (Chip On Glass) or COF (Chi Modules with integrated circuits (ICs) mounted using the "p on film" method, etc. It is a rule.

[0023] One aspect of the present invention is a combination of the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button. Effect of the Invention

[0024] According to one embodiment of the present invention, a display device having a light detection function can be provided. As a result, the resolution of a display device having a light detection function can be improved. According to one embodiment of the present invention, a multi-function display device can be provided. According to one embodiment of the present invention, a display device with a high aperture ratio can be provided. According to one embodiment of the present invention, a novel display device can be provided. Can be provided.

[0025] According to one embodiment of the present invention, the manufacturing yield of a display device having a light detection function can be improved. According to one embodiment of the present invention, the number of steps for manufacturing a display device having a light detection function can be reduced. In this manner, the manufacturing cost of a display device having a light detection function can be reduced.

[0026] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. However, it is possible to extract effects other than these. [Brief description of the drawings]

[0027] [Figure 1] Figures 1A to 1D are cross-sectional views showing an example of a display device, and Figures 1E to 1G are top views showing an example of a pixel. [Diagram 2] 2A to 2E are cross-sectional views showing an example of a light receiving and emitting device. [Diagram 3] 3A and 3B are cross-sectional views showing an example of a display device. [Figure 4] 4A and 4B are cross-sectional views showing an example of a display device. [Diagram 5] 5A and 5B are cross-sectional views showing an example of a display device. [Figure 6]6A and 6B are cross-sectional views showing an example of a display device. [Figure 7] 7A and 7B are cross-sectional views showing an example of a display device. [Figure 8] Fig. 8A is a cross-sectional view showing an example of a display device, Fig. 8B and Fig. 8C are diagrams showing an example of an upper surface layout of a resin layer. [Figure 9] Fig. 9A is a cross-sectional view showing an example of a display device, and Fig. 9B and Fig. 9C are diagrams showing an example of an upper surface layout of a light blocking layer. [Figure 10] 10A and 10B are cross-sectional views showing an example of a display device. [Figure 11] FIG. 11 is a perspective view showing an example of a display device. [Figure 12] FIG. 12 is a cross-sectional view showing an example of a display device. [Figure 13] FIG. 13 is a cross-sectional view showing an example of a display device. [Figure 14] Fig. 14A is a cross-sectional view illustrating an example of a display device, and Fig. 14B is a cross-sectional view illustrating an example of a transistor. [Figure 15] FIG. 15 is a circuit diagram showing an example of a pixel circuit. [Figure 16] 16A and 16B are diagrams showing an example of a method for driving a display device. [Figure 17] 17A to 17D are timing charts showing an example of a method for driving a display device. [Figure 18] 18A and 18B are timing charts showing an example of a method for driving a display device. [Figure 19] FIG. 19 is a circuit diagram showing an example of a pixel circuit. [Figure 20] 20A to 20C are diagrams showing an example of functions of an electronic device. [Figure 21] 21A and 21B are diagrams showing an example of a method for driving a display device. [Figure 22] 22A and 22B are diagrams showing an example of a method for driving a display device. [Figure 23]23A to 23D are top views showing an example of a pixel. [Figure 24] Fig. 24A is a diagram for explaining the classification of IGZO crystal structures. Fig. 24B is a diagram for explaining the XRD spectrum of a quartz glass substrate. Fig. 24C is a diagram for explaining the XRD spectrum of a crystalline IGZO film. Fig. 24D is a diagram for explaining the micro-electron beam diffraction pattern of a quartz glass substrate. Fig. 24E is a diagram for explaining the micro-electron beam diffraction pattern of a crystalline IGZO film. [Diagram 25] 25A and 25B are diagrams showing an example of an electronic device. [Figure 26] 26A to 26D are diagrams showing an example of an electronic device. [Figure 27] 27A to 27F are diagrams showing an example of an electronic device. [Figure 28] FIG. 28 is a diagram showing the luminance-voltage characteristics of the light emitting and receiving device. [Figure 29] FIG. 29 is a graph showing the external quantum efficiency-luminance characteristics of the light emitting and receiving device. [Diagram 30] FIG. 30 is a diagram showing the wavelength dependency of the light receiving sensitivity of the light receiving and emitting device. [Diagram 31] FIG. 31 is a diagram showing the wavelength dependency of the light receiving sensitivity of the light receiving and emitting device. [Diagram 32] FIG. 32 is a diagram showing the temperature dependence of the light receiving sensitivity of the light receiving and emitting device. [Diagram 33] FIG. 33 is a graph showing the external quantum efficiency-luminance characteristics of the light emitting and receiving device. [Diagram 34] FIG. 34 is a diagram showing the current density-voltage characteristics of the light emitting and receiving device when a forward bias is applied. [Diagram 35] FIG. 35 is a diagram showing the external quantum efficiency vs. wavelength characteristics of the light emitting and receiving device. [Diagram 36] FIG. 36 is a diagram showing the current density-voltage characteristics of the light emitting and receiving device when a reverse bias is applied. [Figure 37] FIG. 37 is a diagram showing the external quantum efficiency-luminance characteristics of the light emitting and receiving device. [Figure 38]FIG. 38 is a diagram showing the current density-voltage characteristics of the light emitting and receiving device when a forward bias is applied. [Figure 39] FIG. 39 is a diagram showing the external quantum efficiency vs. wavelength characteristics of the light emitting and receiving device. [Diagram 40] FIG. 40 is a diagram showing the current density-voltage characteristics of the light emitting and receiving device when a reverse bias is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0029] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0030] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, in order to facilitate understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0031] The words "film" and "layer" may be interchangeable depending on the circumstances. For example, the term "conductive layer" can be replaced with "conductive film" Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0032] In this specification and the like, unless otherwise specified, elements (light-emitting devices, light-emitting layers, etc.) Even when describing a configuration that has multiple elements, when describing matters common to each element For example, the light-emitting layer 193B and the light-emitting layer 193G, etc. When describing matters common to the above, it may be referred to as the light-emitting layer 193.

[0033] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0034] The display unit of the display device of the present embodiment has an image capturing function and a sensor function in addition to a function of displaying an image. It also has one or both of the following functions:

[0035] For example, an organic electroluminescence (EL) device is a light-emitting device, and an organic photodiode is a light-receiving device. Therefore, the display using the organic EL device can be formed on the same substrate. The display device can include an organic photodiode.

[0036] However, when a subpixel having a light receiving device is provided in addition to the subpixel having a light emitting device, In such a case, the aperture ratio of the pixel may decrease, and it may become difficult to achieve high definition of the display device.

[0037] Therefore, in the display device of the present embodiment, a sub-pixel that exhibits one of the colors is provided with a light-emitting device instead of a light-emitting device. Instead, a light receiving / emitting device is provided. The light receiving / emitting device has the function of emitting light (light emitting function). For example, a pixel has a red subpixel, a green subpixel, and a In the case of a pixel having three subpixels, i.e., a red subpixel, a blue subpixel, and a red subpixel, at least one subpixel is a receiving pixel. The light receiving and emitting device is configured to include an optical device and the other sub-pixels are configured to include a light emitting device. By combining light-emitting and light-receiving devices, the number of sub-pixels in a pixel can be reduced. This allows the pixel to have a light receiving function. While maintaining the image quality and resolution of the display device, the display unit of the display device is equipped with an imaging function and a sensor. One or both of the functions can be added.

[0038] The light-receiving device is made by combining an organic EL device and an organic photodiode. For example, the active layer of an organic photodiode can be integrated into the stacked structure of an organic EL device. By adding this, a light-receiving device can be created. Light-emitting devices made by combining organic photodiodes are also used in conjunction with organic EL devices. By forming layers that can be used in the same configuration at once, it is possible to suppress an increase in the number of film formation steps.

[0039] For example, one of the pair of electrodes (a common electrode) is shared by the light receiving and emitting device. For example, a hole injection layer, a hole transport layer, an electron transport layer, and an electrode layer may be used. At least one of the child injection layers may be a layer common to the light receiving and emitting device. In addition, for example, the light receiving and emitting devices are different from each other except for the presence or absence of an active layer of the light receiving device. In other words, the light-emitting device can be made to have the same structure as the light-receiving device. By simply adding a conductive layer, a light-emitting device can be fabricated. The number of film depositions and masks can be reduced by having common layers for the seat and the light-emitting device. This makes it possible to reduce the manufacturing process and manufacturing costs of the display device. To manufacture a display device having a light receiving and emitting device using existing manufacturing equipment and manufacturing methods. can be done.

[0040] In addition, the layers of the light receiving and emitting device are formed in the following manner when the light receiving and emitting device functions as a light receiving device. The function of the device may be different when it functions as a light emitting device and when it functions as a light emitting device. The components are based on the function when the light receiving and emitting device functions as a light emitting device. For example, the hole injection layer is used to prevent the light emitting device from functioning as a light emitting device. functions as a hole injection layer, and when the light emitting / receiving device functions as a light receiving device, Similarly, the electron injection layer functions as a hole transport layer. When the light emitting device functions as a light receiving device, the light emitting device functions as an electron injection layer. When the film is formed, it functions as an electron transport layer.

[0041] In this manner, the display device of the present embodiment has a light receiving and emitting device in the display section. Specifically, the display unit has a matrix of light receiving and emitting devices and light emitting devices. Therefore, the display unit has an image capturing function and a display function in addition to displaying an image. It also has one or both of the sensing functions.

[0042] The display unit can be used as an image sensor or a touch sensor. By detecting, it is possible to capture images and detect the proximity or contact of objects (finger, pen, etc.). Furthermore, in the display device of the present embodiment, the light emitting device is connected to the light of the sensor. Therefore, there is no need to provide a light receiving section and a light source separately from the display device. This makes it possible to reduce the number of parts in the electronic device.

[0043] In the display device of this embodiment, when the light emitted by the light-emitting device included in the display portion is reflected by an object, The light-receiving device can detect the reflected light, so imaging and touch (and more) can be performed even in dark places. is capable of proximity detection.

[0044] The display device of this embodiment uses a light emitting device and a light receiving and emitting device to display an image. In other words, the light-emitting device and the light-receiving and light-emitting device are display devices (display elements and It functions as a

[0045] The light-emitting device is OLED (Organic Light Emitting Diode). iode) and QLED(Quantum-dot Light Emitting Di) It is preferable to use an EL device such as an EL device having a light-emitting material and These include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and inorganic compounds ( Quantum dot materials, etc.), materials that exhibit thermally activated delayed fluorescence (Therma lly Activated Delayed Fluorescence (TADF) As for light-emitting devices, micro LEDs (Light Emitting Diodes) are also used. Alternatively, an LED such as a light emitting diode (LED) can be used.

[0046] The display device of this embodiment mode has a function of detecting light by using a light receiving and emitting device. The optical device can detect light with a shorter wavelength than the light emitted by the light-receiving device itself. .

[0047] When the light emitting and receiving device is used as an image sensor, the display device of the present embodiment For example, the display device of this embodiment can be used to capture an image. It can be used as a scanner.

[0048] For example, an image sensor can be used to obtain data such as fingerprints and palm prints. That is, the display device of this embodiment can have a built-in biometric authentication sensor. By incorporating a biometric authentication sensor in the device, it is possible to provide a biometric authentication sensor separately from the display device. Compared to the conventional method, the number of parts in an electronic device can be reduced, making it possible to reduce the size and weight of the electronic device. do.

[0049] In addition, the image sensor can be used to record information such as the user's facial expression, eye movement, or changes in pupil diameter. By analyzing the data, the user's physical and mental information can be obtained. Based on this information, the display and / or audio output contents can be changed. By doing so, for example, it will be possible to develop devices for VR (Virtual Reality) and AR (Au Equipment for Enhanced Reality or Mixed Reality ) devices, it is possible to ensure that users can use the devices safely.

[0050] In addition, when the light emitting and receiving device is used as a touch sensor, the display device of the present embodiment has a light emitting and receiving The device can be used to detect the proximity or contact of an object.

[0051] The light-receiving device is a photoelectric conversion device that detects light incident on the light-receiving device and generates an electric charge. The amount of charge generated is determined by the amount of incident light.

[0052] The light-receiving and light-emitting device is formed by adding an active layer of a light-receiving device to the above-mentioned light-emitting device. It can be made.

[0053] The light-receiving device uses, for example, the active layer of a pn-type or pin-type photodiode. It is possible.

[0054] In particular, the light-receiving and light-emitting device includes an active layer of an organic photodiode having a layer containing an organic compound. It is preferable to use an organic photodiode. The organic photodiode can be easily made thin, lightweight, and large in area. Since the present invention is easy to manufacture and has a high degree of freedom in terms of shape and design, it can be applied to a variety of display devices.

[0055] 1A to 1D each show a cross-sectional view of a display device according to one embodiment of the present invention.

[0056] The display device 50A shown in FIG. 1A has a light emitting / receiving device between a substrate 51 and a substrate 59. Layer 53 and layer 57 having a light emitting device.

[0057] The display device 50B shown in FIG. 1B has a light emitting / receiving device between the substrate 51 and the substrate 59. It has layer 53, layer 55 having transistors, and layer 57 having light emitting devices.

[0058] The display device 50A and the display device 50B emit green (G) light from the layer 57 having the light-emitting device. The light having the light receiving and emitting device 53 emits red (R) light. Note that the display device according to one embodiment of the present invention has a light-emitting and receiving device. The color of light emitted by the layer 53 is not limited to red.

[0059] The light emitting and receiving devices included in the layer 53 having the light emitting and receiving devices are The light receiving and emitting device can detect light incident from the outside of the device 50B. For example, it is possible to detect either or both of green (G) light and blue (B) light.

[0060] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more sub-pixels. A sub-pixel is a light emitting / receiving device or For example, a pixel may have three sub-pixels (three colors: R, G, and B). , or three colors such as yellow (Y), cyan (C), and magenta (M), or A four-element configuration (such as R, G, B, and white (W) or R, G, B, and Y) At least one color subpixel has a light receiving / emitting device. The pixel electrodes may be provided in all pixels or in some pixels. One pixel may have a plurality of light receiving and emitting devices.

[0061] The transistor-containing layer 55 is, for example, a transistor electrically connected to a light-receiving device. The light emitting device includes a transistor electrically connected to the light emitting device. The layer 55 may further include wiring, electrodes, terminals, capacitance, resistance, and the like.

[0062] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger touching the display device. Alternatively, the object may be in close proximity (not in contact) with the display device (FIG. 1C). For example, as shown in Figs. 1C and 1D, In the layer 57 having the light-emitting devices, light emitted by the light-emitting devices is directed to the display device 50B. The reflection of a finger 52 in contact with or in close proximity to the layer 53 having the light receiving and emitting devices The light emitting device detects the reflected light. can detect proximity.

[0063] [Pixels] 1E to 1G show an example of a pixel. Note that the arrangement of the sub-pixels is not limited to the order shown in the drawings. For example, the positions of the sub-pixel (B) and the sub-pixel (G) may be reversed.

[0064] The pixel shown in FIG. 1E is a stripe array pixel that emits red light and has a light receiving function. The sub-pixels are: R·PD, green light, G, and blue light. In a display device in which a pixel is composed of three sub-pixels of R, G, and B, By replacing the light-emitting device used in the subpixel with a light-receiving device, the pixel can have a light-receiving function. It is possible to manufacture a display device having the above structure.

[0065] The pixel shown in FIG. 1F is arranged in a matrix, emits red light, and has a light receiving function. The sub-pixels that emit green light (R PD), the sub-pixels that emit blue light (G), and the sub-pixels that emit blue light (B ) and a sub-pixel (W) that emits white light. In a display device made up of R pixels, the light-emitting device used in the R subpixel is also called a light-receiving device. By replacing the above with the above, a display device having a light receiving function in the pixel can be manufactured.

[0066] The pixels shown in FIG. 1G are arranged in a Pentile array, with different combinations of two colors depending on the pixel. The upper left pixel and the lower right pixel shown in FIG. 1G have sub-pixels that emit red light. The pixel has a light receiving function (R·PD) and a green light-emitting subpixel (G). The lower left pixel and the upper right pixel shown in FIG. 1G have a subpixel (G) that emits green light, and The subpixel (B) shown in FIG. 1G has a shape similar to that of the subpixel (B) that emits blue light. 2 shows the top shape of a light emitting device or a light receiving / emitting device included in a pixel.

[0067] As described above, pixels having various arrangements can be applied to the display device of this embodiment mode. In the display device of this embodiment, it is not necessary to change the pixel arrangement in order to incorporate a light receiving function into the pixels. Since there is no need to use a 100% OLED display, the display can be equipped with both imaging and sensing functions without reducing the aperture ratio and definition. Either or both can be added.

[0068] [Light receiving and emitting devices] 2A to 2E show examples of the layered structure of the light emitting and receiving device.

[0069] The light emitting and receiving device has at least an active layer and a light emitting layer between a pair of electrodes.

[0070] The light-receiving device is made of layers other than the active layer and the light-emitting layer, which are made of materials with high hole injection properties, hole transport Highly conductive materials, highly hole-blocking materials, highly electron-transporting materials, and highly electron-injecting materials Highly electron-blocking or bipolar materials (electron-transporting and hole-transporting The material may further include a layer containing a material having a high optical density.

[0071] The light emitting and receiving devices shown in FIGS. 2A to 2C each include a first electrode 180, a hole injection layer 18 1, hole transport layer 182, active layer 183, light emitting layer 193, electron transport layer 184, electron injection layer 1 85 and a second electrode 189 .

[0072] Each of the light emitting and receiving devices shown in FIGS. 2A to 2C includes an active layer 18 Therefore, the active layer 1 is added to the process of manufacturing the light-emitting device. By simply adding the process of forming the film 83, the light-receiving and light-emitting devices can be formed in parallel with the formation of the light-emitting devices. In addition, the light emitting device and the light receiving / emitting device can be formed on the same substrate. Therefore, it is possible to provide the display with an imaging function and a sensor function without significantly increasing the manufacturing process. The present invention may be provided with one or both of the following functions: sensing and desensitization.

[0073] The stacking order of the light-emitting layer 193 and the active layer 183 is not limited. 1 shows an example in which an active layer 183 is provided on the active layer 183 and a light emitting layer 193 is provided on the active layer 183. In FIG. 2B, a light-emitting layer 193 is provided on the hole transport layer 182. In this example, an active layer 183 is provided. The active layer 183 and the light emitting layer 193 are shown in FIG. A, as shown in FIG. 2B, they may be in contact with each other.

[0074] As shown in FIG. 2C, a buffer layer is sandwiched between the active layer 183 and the light-emitting layer 193. The buffer layer is preferably a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, At least one layer selected from the group consisting of a hole blocking layer, a hole blocking layer, and an electron blocking layer can be used. Alternatively, the buffer layer may be a layer containing a bipolar material. An example is shown in which a hole transport layer 182 is used as a buffer layer.

[0075] By providing a buffer layer between the active layer 183 and the light-emitting layer 193, the active layer 183 can be prevented from The transfer of excitation energy to the layer 183 can be suppressed. It is also possible to adjust the optical path length (cavity length) of a microcavity structure. Therefore, the light emitting / receiving device having a buffer layer between the active layer 183 and the light emitting layer 193 These can provide high luminous efficiency.

[0076] The light-receiving and light-emitting device shown in FIG. 2D differs from the light-receiving and light-emitting device shown in FIGS. 2A and 2C in that it does not have the hole transport layer 182. The light emitting / receiving device is different from the light emitting / receiving device. At least one of the electron transport layer 184 and the electron injection layer 185 may not be included. The light emitting and receiving device may also have other functional layers such as a hole blocking layer and an electron blocking layer. It's fine.

[0077] The light emitting and receiving device shown in FIG. 2E does not have the active layer 183 and the light emitting layer 193. 2A to 2C in that a layer 186 serving as both a light receiving and a light emitting layer is provided.

[0078] The layer 186 serving as both a light-emitting layer and an active layer can be used for the active layer 183, for example. An n-type semiconductor, a p-type semiconductor that can be used for the active layer 183, and a light-emitting layer 193 A layer containing three materials, namely, a light-emitting material capable of emitting light and a light-emitting material capable of emitting light, can be used.

[0079] In addition, the absorption spectrum of the mixture of n-type and p-type semiconductors is The band and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material do not overlap each other. It is preferable that they are not present, and it is more preferable that they are sufficiently separated.

[0080] In light-receiving devices, a conductive film that transmits visible light is used for the electrode on the side from which light is extracted. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0081] When the light-receiving device is operated as a light-emitting device, the hole injection layer is connected from the anode to the hole transport layer. A hole injection layer is a layer that contains a material with high hole injection properties. Materials with high electron transfer properties include aromatic amine compounds and hole transport and acceptor materials. (electron accepting material) can be used.

[0082] When the light emitting / receiving device is operated as a light emitting device, the hole transport layer is This layer transports holes injected from the anode to the light-emitting layer. When the active layer is driven as an anode, the hole transport layer transports holes generated in response to incident light in the active layer to the anode. The hole transport layer is a layer that contains a hole transport material. Then, 1×10 -6 cm 2 A material having a hole mobility of 0.1V or more is preferable. Any other material may be used as long as it has a higher hole transporting property than electron transporting property. As hole transport materials, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, etc.) olefin derivatives, furan derivatives, etc.) and aromatic amines (compounds with an aromatic amine skeleton) ) or the like having a high hole transporting property is preferred.

[0083] When the light emitting / receiving device is operated as a light emitting device, the electron transport layer is This layer transports electrons injected from the cathode to the light-emitting layer. When the active layer is driven as a cathode, the electron transport layer transports electrons generated in response to incident light in the active layer to the cathode. The electron transport layer is a layer that contains an electron transporting material. Then, 1×10 -6 cm 2A material having an electron mobility of 0.1V or more is preferable. Other materials may also be used as long as they have a higher electron transporting property than hole transporting property. As electron transport materials, metal complexes having a quinoline skeleton, gold complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc. Oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives , thiazole derivatives, phenanthroline derivatives, quinoline derivatives having quinoline ligands benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridinium derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds Materials having high electron transport properties, such as π-electron deficient heteroaromatic compounds, can be used.

[0084] When the light-receiving device is operated as a light-emitting device, the electron injection layer is a layer that transfers electrons from the cathode to the electron transport layer. The electron injection layer is a layer that contains a material with high electron injection properties. As materials with high penetration properties, alkali metals, alkaline earth metals, or their compounds are used. Materials with high electron injection properties include electron transport materials and donor materials (electron Composite materials including a polymer and a donor material may also be used.

[0085] The light-emitting layer 193 is a layer containing a light-emitting material. The light-emitting layer 193 contains one or more types of light-emitting material. The luminescent materials can be blue, purple, blue-purple, green, yellow-green, yellow, A substance that emits light of a color such as red, orange, or red is appropriately used. It is also possible to use a substance that emits

[0086] Light-emitting materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials. do.

[0087] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, and triphenylene derivatives. , fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran Derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidin Examples of the aryl group include aryl derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0088] Examples of phosphorescent materials include 4H-triazole skeletons, 1H-triazole skeletons, imidazoline skeletons, and Organometallic complexes having a zole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton (especially iridium complexes), and the use of phenylpyridine derivatives with electron-withdrawing groups as ligands. Examples of the complex include organometallic complexes (particularly iridium complexes), platinum complexes, and rare earth metal complexes.

[0089] The light-emitting layer 193 contains one or more organic compounds (homogeneous compounds) in addition to the light-emitting substance (guest material). The organic compound may include one or more organic compounds. One or both of a hole transporting material and an electron transporting material can be used. Bipolar materials or TADF materials are used as one or more organic compounds. Good too.

[0090] The light-emitting layer 193 is made of, for example, a phosphorescent material and a hole transport material which is a combination that easily forms an exciplex. It is preferable that the light-transmitting layer has an electron-transporting material and an electron-transporting material. This is the energy transfer from the exciplex to the luminescent material (phosphorescent material), called ExTET (Exc Efficient light emission using iplex-Triplet Energy Transfer The emission wavelength overlaps with the lowest energy absorption band of the luminescent material. By selecting a combination that forms an exciplex that exhibits This configuration allows for a highly efficient light emission of the light-emitting device. It is possible to simultaneously achieve low voltage operation and long life.

[0091] The combination of materials that form an exciplex is determined by the HOMO level (highest It is preferable that the occupied orbital level of the electron transporting material is equal to or higher than the HOMO level of the electron transporting material. The LUMO level (lowest unoccupied molecular orbital) of the material is equal to or higher than the LUMO level of the electron transport material. The LUMO and HOMO levels of the material can be determined by cyclic voltammetry (C V) Derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by measurement It is possible.

[0092] The formation of an exciplex can be used to determine the emission spectrum of a hole transport material, the emission spectrum of an electron transport material, etc. The emission spectra of the mixed films were compared. The spectrum shifts to longer wavelengths than the emission spectrum of each material (or a new peak appears on the longer wavelength side). This can be confirmed by observing the phenomenon of hole transporting material. Transient photoluminescence (PL) of electron transport materials and the mixture of these materials The transient PL lifetime of the mixed film was compared, and it was found that the transient PL lifetime of the mixed film was longer than that of each material. Differences in the transient response, such as the presence of long-lived components or a larger proportion of delayed components, were observed. The above-mentioned transient PL can be confirmed by measuring the That is, the transient EL of the hole transport material, the electron The transient EL of the materials with transport properties and the transient EL of the mixed films of these materials are compared, and the difference in the transient response is investigated. The formation of the exciplex can also be confirmed by observing the

[0093] The active layer 183 includes a semiconductor. The semiconductor may be an inorganic semiconductor such as silicon, In this embodiment, the semiconductor of the active layer is As an example, an organic semiconductor is used. By using an organic semiconductor, the light-emitting layer 193 and the active layer The conductive layer 182 and the conductive layer 183 can be formed by the same method (for example, vacuum deposition method), and the manufacturing equipment can be shared. This is preferred because it can be easily passed on.

[0094] The active layer 183 is made of an n-type semiconductor material such as fullerene (e.g., C 60 , C 70 etc. ) and fullerene derivatives, which are electron-accepting organic semiconductor materials. Fullerenes have a shape like a buckle, which is energetically stable. In this case, both the HOMO level and the LUMO level are deep (low). Because it is deep, it has extremely high electron-accepting properties. Normally, like benzene, it has a planar structure. When the π-electron conjugation (resonance) spreads to the Because of its spherical shape, it has high electron-accepting properties despite the large spread of π electrons. High electron acceptance allows charge separation to occur quickly and efficiently, making it useful as a light-receiving device. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C6 It is preferred since it has a larger π-electron conjugated system and a broad absorption band in the long wavelength region as compared to 0.

[0095] In addition, as materials for n-type semiconductors, metal complexes having a quinoline skeleton, Metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton. compounds, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole Derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline Derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridin derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives , rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0096] The material of the p-type semiconductor in the active layer 183 is copper (II) phthalocyanine (Copp er(II) phthalocyanine;CuPc), tetraphenyldibenzo Tetraphenyldibenzoperiflanthene (D BP), Zinc Phthalocyanine (ZnPc), Examples of such organic semiconductor materials include electron-donating organic semiconductor materials such as tin phthalocyanine (SnPc) and quinacridone. can be done.

[0097] In addition, p-type semiconductor materials include carbazole derivatives, thiophene derivatives, and furan derivatives. Compounds having an aromatic amine skeleton are also included as p-type semiconductor materials. are naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, Luorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, Dhole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, cinchona Cridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives Examples of the polythiophene derivatives include polyvinylcarbazole derivatives and polythiophene derivatives.

[0098] The HOMO level of an electron-donating organic semiconductor material is The LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the It is preferable that the LUMO level is shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0099] Spherical fullerenes are used as electron-accepting organic semiconductor materials, and electron-donating organic semiconductors are It is preferable to use an organic semiconductor material with a nearly planar shape as the material. When molecules of the same kind aggregate, the energy levels of their molecular orbitals change Since the distance is short, the carrier transport property can be improved.

[0100] For example, the active layer 183 is preferably formed by co-evaporation of an n-type semiconductor and a p-type semiconductor. .

[0101] The layer 186, which serves as both the light-emitting layer and the active layer, is made of the above-mentioned light-emitting material, n-type semiconductor, and p-type semiconductor. It is preferable to form the

[0102] Hole injection layer 181, hole transport layer 182, active layer 183, light emitting layer 193, electron transport layer 184 The electron injection layer 185 and the layer 186 serving as both the light emitting layer and the active layer are made of low molecular weight compounds and high molecular weight compounds. Any molecular compound may be used, including inorganic compounds. Formed by methods such as deposition (including vacuum deposition), transfer printing, inkjet printing, and coating. It is possible.

[0103] Hereinafter, a light-receiving and light-emitting device included in a display device according to one embodiment of the present invention will be described with reference to FIGS. The detailed configuration of the light-emitting device will be described.

[0104] The display device according to one embodiment of the present invention emits light in a direction opposite to a substrate on which a light-emitting device is formed. The top-emission type emits light toward the substrate on which the light-emitting device is formed. It can be either a one-emission type, which emits light from both sides, or a dual-emission type, which emits light from both sides. .

[0105] 3 to 5, a top emission type display device will be described as an example.

[0106] [Configuration example 1] The display device shown in FIG. 3A and FIG. 3B has a transistor-containing layer 55 formed on a substrate 151. A light emitting device 47B that emits blue (B) light, a light emitting device 47B that emits green (G) light, 47G, a light receiving / emitting device 47R (PD) that emits red (R) light and has a light receiving function has.

[0107] FIG. 3A shows a case where the light receiving and emitting device 47R (PD) functions as a light emitting device. In FIG. 3A, light-emitting device 47B emits blue light and light-emitting device 47G emits green light. In this example, the light emitting / receiving device 47R (PD) emits red light.

[0108] FIG. 3B shows a case where the light receiving and emitting device 47R (PD) functions as a light receiving device. In FIG. 3B, light-emitting device 47B emits blue light and light-emitting device 47G emits green light. 13 shows an example in which the light receiving and emitting device 47R (PD) detects light of

[0109] The light emitting device 47B, the light emitting device 47G, and the light receiving / emitting device 47R (PD) are Each of the pixel electrodes 191 and the common electrode 115 is provided. The case where the positive electrode functions as an anode and the common electrode 115 functions as a cathode will be described as an example.

[0110] In this embodiment, in the light emitting device as well as the light receiving and emitting device 47R (PD), The pixel electrode 191 functions as an anode, and the common electrode 115 functions as a cathode. That is, the light emitting and receiving device 47R (PD) includes a pixel electrode 191 and a common electrode 115. By applying a reverse bias between the two, the light incident on the light receiving and emitting device 47R (PD) It is possible to detect the amount of charge generated and extract it as a current.

[0111] The common electrode 115 is connected to the light emitting device 47B, the light emitting device 47G, and the light receiving and emitting device 47 R(PD) are used in common. The pixel electrodes 191 of the device 47R (PD) are electrically insulated from each other ( (also called electrically isolated).

[0112] The light emitting device 47B, the light emitting device 47G, and the light receiving / emitting device 47R (PD) have The material and film thickness of the pair of electrodes can be made the same. This simplifies the manufacturing process of the display device. This reduces costs and simplifies the manufacturing process.

[0113] The configuration of the display device shown in FIGS. 3A and 3B will be specifically described.

[0114] The light-emitting device 47B includes a buffer layer 192B, a light-emitting layer 193B, and a The light-emitting layer 193B is made of a light-emitting material that emits blue light. The light emitting device 47B has a function of emitting blue light.

[0115] The light-emitting device 47G includes a buffer layer 192G, a light-emitting layer 193G, and a The light-emitting layer 193G is made of a light-emitting material that emits green light. The light emitting device 47G has a function of emitting green light.

[0116] The light emitting / receiving device 47R (PD) has a buffer layer 192R and an active layer 193R on a pixel electrode 191. The light-emitting layer 193R includes, in this order, a dielectric layer 83, a light-emitting layer 193R, and a buffer layer 194R. The active layer 183 has a light-emitting material that emits red light. For example, the active material has an organic compound that absorbs light (e.g., green light and / or blue light). The conductive layer 183 may be made of an organic compound that absorbs not only visible light but also ultraviolet light. The optical device 47R (PD) has a function of emitting red light. PD) detects light emitted from at least one of the light-emitting devices 47G and 47B. It is preferable that the device has a function of detecting both the emitted light and the emitted light from both the light sources.

[0117] The active layer 183 does not easily absorb red light and absorbs light with a shorter wavelength than red light. It is preferable that the light receiving and emitting device 47R (PD) has an organic compound. The function of efficiently emitting red light and the function of accurately detecting light with a shorter wavelength than red light are , can be prepared.

[0118] Pixel electrode 191, buffer layer 192R, buffer layer 192G, buffer layer 192B, active layer 183, light-emitting layer 193R, light-emitting layer 193G, light-emitting layer 193B, buffer layer 194R, The buffer layer 194G, the buffer layer 194B, and the common electrode 115 each have a single-layer structure. It may have a laminated structure.

[0119] In the display device shown in FIG. 3A and FIG. 3B, the buffer layer, the active layer, and the light-emitting layer are It is a layer that is created separately for each purpose.

[0120] The buffer layers 192R, 192G, and 192B are each a hole injection layer and a hole transport layer. In addition, the buffer layers 192R, 192G, and 192B may be formed on the substrate 190R. The buffer layers 194B, 194G, and 194R may have an electron blocking layer. Each of the layers may have one or both of an electron injection layer and an electron transport layer. The buffer layers 194R, 194G, and 194B may each include a hole blocking layer. Regarding the materials of each layer constituting the light-emitting device, the materials constituting the light-receiving and light-emitting device described above are the same as those of the light-emitting and receiving device described above. You can refer to the layer description.

[0121] [Configuration example 2] As shown in FIG. 4A and FIG. 4B, a light emitting device 47B, a light emitting device 47G, and a light receiving / emitting device The vice 47R (PD) may have a common layer between a pair of electrodes. A light emitting and receiving device can be built into a display device without significantly increasing the number of manufacturing steps.

[0122] The light-emitting device 47B, the light-emitting device 47G, and the light-receiving and light-emitting device 47R (P D) has a common layer 112 and a common layer 114 in addition to the configuration shown in FIG. 3A and FIG. 3B.

[0123] The light-emitting device 47B, the light-emitting device 47G, and the light-receiving and light-emitting device 47R (P D) are buffer layers 192R, 192G, and 192B and buffer layers 194R, 194G, 3A and 3B in that it does not have 194B but has common layer 112 and common layer 114. The configuration is different.

[0124] The common layer 112 can include one or both of a hole injection layer and a hole transport layer. The transmission layer 114 may include one or both of an electron injection layer and an electron transport layer.

[0125] Each of the common layer 112 and the common layer 114 may have a single-layer structure or a laminate structure. This is also fine.

[0126] [Configuration example 3] The display device shown in FIG. 5A has a laminated structure shown in FIG. 2C applied to a light receiving / emitting device 47R (PD). This is an example of its use.

[0127] The light emitting / receiving device 47R (PD) has a hole injection layer 181, an active layer 18, and a pixel electrode 191. 3. Hole transport layer 182R, light emitting layer 193R, electron transport layer 184, electron injection layer 185, and and a common electrode 115 in this order.

[0128] The hole injection layer 181, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 form a light emitting layer. It is a common layer with device 47G and light-emitting device 47B.

[0129] The light-emitting device 47G includes a hole injection layer 181, a hole transport layer 182G, and a The light-emitting layer 193G, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are formed in this order. Yes.

[0130] The light-emitting device 47B includes a hole injection layer 181, a hole transport layer 182B, and a The light-emitting layer 193B, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are formed in this order. Yes.

[0131] The light-emitting device of the display device of this embodiment has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting device is a It is preferable that the device has an electrode (semi-transmissive / semi-reflective electrode) that is transparent and reflective to the light. The other electrode preferably has a reflectivity to visible light (reflective electrode). The optical device has a microcavity structure, which allows the light emitted from the light-emitting layer to be transmitted to both electrodes. This can cause resonance between the two, enhancing the light emitted from the light emitting device.

[0132] The semi-transmissive / semi-reflective electrode is a combination of a reflective electrode and an electrode that is transparent to visible light (transparent electrode). In the present specification and the like, they are referred to as semi-transparent and semi-reflective, respectively. The reflective electrode, which functions as a part of the reflective electrode, is called a pixel electrode or a common electrode, and the transparent electrode is called a light-emitting electrode. Although it is sometimes written as an optical adjustment layer, the transparent electrode (optical adjustment layer) is also used as a pixel electrode or a common electrode. It can be said that it has all the functions.

[0133] The light transmittance of the transparent electrode is 40% or more. For example, a light-emitting device uses visible light (wavelength It is preferable to use an electrode having a transmittance of 40% or more for light having a wavelength of 400 nm or more and less than 750 nm. The reflectance of the semi-transmissive / semi-reflective electrode to visible light is preferably 10% or more and 95% or less. The reflectance of the reflective electrode for visible light is 40% or more and 100% or less. The resistivity of these electrodes is 1×1 0 -2 It is preferable that the display device is a light-emitting device that emits near-infrared light. In this case, the transmittance of near-infrared light (light with wavelengths of 750 nm to 1300 nm) of these electrodes is It is preferable that the reflectance is also within the above numerical range.

[0134] Each of the hole transport layers 182B, 182G, and 182R has a function as an optical adjustment layer. Specifically, the light-emitting device 47B may be configured such that the optical distance between the pair of electrodes is such that blue light is emitted. It is preferable to adjust the thickness of the hole transport layer 182B so as to obtain an optical distance that enhances the light intensity. Similarly, the light-emitting device 47G has an optical distance between a pair of electrodes that enhances green light. It is preferable to adjust the thickness of the hole transport layer 182G so that the light emitting / receiving device The optical distance between the pair of electrodes of the 47R (PD) is set to enhance the red light. In addition, it is preferable to adjust the thickness of the hole transport layer 182R. The semi-transmitting and semi-reflective electrode is not limited to the hole transport layer. In the case of a layered structure, the optical distance between a pair of electrodes refers to the optical distance between a pair of reflective electrodes.

[0135] [Configuration example 4] The display device shown in FIG. 5B has a laminated structure shown in FIG. 2D applied to a light receiving and emitting device 47R (PD). This is an example of its use.

[0136] The light emitting / receiving device 47R (PD) has a hole injection layer 181, an active layer 18, and a pixel electrode 191. 3. The light-emitting layer 193R, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are They are in order.

[0137] The hole injection layer 181, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 form a light emitting layer. It is a common layer with device 47G and light-emitting device 47B.

[0138] The light-emitting device 47G includes a hole injection layer 181, a hole transport layer 182G, and a The light-emitting layer 193G, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are formed in this order. Yes.

[0139] The light-emitting device 47B includes a hole injection layer 181, a hole transport layer 182B, and a The light-emitting layer 193B, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are formed in this order. Yes.

[0140] The hole transport layer is provided in the light-emitting device 47G and the light-emitting device 47B. In this way, in addition to the active layer and the light-emitting layer, the light-emitting device Some layers may be provided only in one of the light receiving and emitting devices.

[0141] A detailed configuration of a display device according to one embodiment of the present invention will be described below with reference to FIGS. do.

[0142] [Display device 10A] 6A and 6B show cross-sectional views of the display device 10A.

[0143] The display device 10A includes a light-emitting device 190B, a light-emitting device 190G, and a light-receiving and light-emitting device Has 190R(PD).

[0144] The light-emitting device 190B includes a pixel electrode 191, a buffer layer 192B, a light-emitting layer 193B, a buffer The light-emitting device 190B has a first layer 194B, a second layer 194C, and a common electrode 115. The light-emitting device 190B emits blue light 21. It has the function of emitting B.

[0145] The light-emitting device 190G includes a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer The light-emitting device 190G has a first electrode 194G, a second electrode 194G, and a common electrode 115. The light-emitting device 190G emits green light 21 It has the function of emitting G.

[0146] The light emitting / receiving device 190R (PD) includes a pixel electrode 191, a buffer layer 192R, and an active layer 18 3, a light emitting layer 193R, a buffer layer 194R, and a common electrode 115. The sensor 190R (PD) has a function of emitting red light 21R and a function of detecting light 22. do.

[0147] FIG. 6A shows a case where the light receiving and emitting device 190R (PD) functions as a light emitting device. In FIG. 6A, light-emitting device 190B emits blue light and light-emitting device 190G emits green light. 13 shows an example in which the light emitting / receiving device 190R (PD) emits red light.

[0148] FIG. 6B shows a case where the light receiving and emitting device 190R (PD) functions as a light receiving device. In FIG. 6B, light-emitting device 190B emits blue light, and light-emitting device 190G emits blue light. 13 shows an example in which the light emitting and receiving device 190R (PD) detects green light.

[0149] The pixel electrode 191 is located on the insulating layer 214. The edge of the pixel electrode 191 is connected to the partition wall 216. The two adjacent pixel electrodes 191 are covered with a partition wall 216. Electrically insulated (also called electrically separated).

[0150] An organic insulating film is suitable for the partition wall 216. Materials that can be used for the organic insulating film include Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide a Amido resin, siloxane resin, benzocyclobutene resin, phenolic resin, and their derivatives The partition wall 216 is a layer that transmits visible light. Details will be described later. However, instead of the partition 216, a partition 217 that blocks visible light may be provided.

[0151] The display device 10A includes a light emitting and receiving device 19 between a pair of substrates (substrate 151 and substrate 152). 0R(PD), light emitting device 190G, light emitting device 190B, and transistor 42, etc. has.

[0152] The light receiving and emitting device 190R (PD) has a function of detecting light. The device 190R (PD) receives light 22 incident from outside the display device 10A and outputs The light 22 is a light emitting device 190G and a light emitting device The light emitted from one or both of the devices 190B can be regarded as light reflected by the object. The light 22 may be incident on the light receiving and emitting device 190R (PD) via a lens.

[0153] Light emitting device 190G and light emitting device 190B (hereinafter, collectively referred to as light emitting device 190 Specifically, the light-emitting device 190 includes a pixel By applying a voltage between the electrode 191 and the common electrode 115, light is emitted toward the substrate 152. It is an electroluminescent device (see light 21G and light 21B).

[0154] The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are organic layers (containing an organic compound). The pixel electrode 191 has a function of reflecting visible light. It is preferable that the common electrode 115 transmits visible light.

[0155] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 is electrically connected to the source or drain of a light emitting device or It has a function of controlling the driving of the light receiving and emitting devices.

[0156] At least a part of the circuit electrically connected to the light receiving and emitting device 190R (PD) is It is formed of the same material and in the same process as the circuit electrically connected to the light emitting device 190. This makes it possible to reduce the thickness of the display device compared to the case where the two circuits are formed separately. The thickness can be reduced and the manufacturing process can be simplified.

[0157] The light receiving and emitting device 190R (PD) and the light emitting device 190 of each color are each provided with a protective layer 1. In FIG. 6A etc., a protective layer 195 is preferably provided on the common electrode 115. By providing the protective layer 195, the light emitting / receiving device 190R (PD ) and the light emitting devices of each color, impurities are prevented from entering the light receiving and emitting device 190. The R(PD) and the light-emitting device of each color can be improved. The protective layer 195 and the substrate 152 are bonded together.

[0158] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The position where the light emitting device 190 overlaps with the light receiving and emitting device 190R (PD) In this specification and the like, the position where the light emitting device 190 overlaps with the opening is defined as Specifically, it refers to the position that overlaps with the light emitting area of ​​the light emitting device 190. Specifically, the position where the light emitting and receiving device 190R (PD) overlaps with the light emitting and receiving device 190R (PD) is This refers to the position where the light-emitting area and the light-receiving area overlap.

[0159] As shown in FIG. 6B, the light emitting device 190 emits light and receives light reflected by the object. The device 190R (PD) can detect the light emitted by the light-emitting device 190. is reflected within the display device 10A and reaches the light receiving and emitting device 190R (PD) without passing through the object. The light shielding layer BM can suppress the effect of such stray light. For example, if the light-shielding layer BM is not provided, the light emitted by the light-emitting device 190G may be The reflected light 23 is reflected by the substrate 152, and the reflected light 24 enters the light receiving and emitting device 190R (PD). By providing the light shielding layer BM, the reflected light 24 may be reflected by the light receiving and emitting device 190R (PD ) can be suppressed. This reduces noise and The sensitivity of the sensor using (PD) can be increased.

[0160] The light-shielding layer BM may be made of a material that blocks light emitted from the light-emitting device. The BM preferably absorbs visible light. The light-shielding layer BM may be, for example, a metal material or A black matrix is ​​created by using a resin material containing a pigment (carbon black, etc.) or a dye. The light-shielding layer BM can be formed by forming a red color filter, a green color filter, and a Alternatively, the second color filter may have a laminated structure of a first color filter and a second color filter.

[0161] [Display device 10B] The display device 10B shown in FIG. 7A includes a light emitting device 190 and a light receiving / emitting device 190R (PD ) do not have the buffer layer 192 and the buffer layer 194, and have the common layer 112 and the common layer 112, respectively. The display device 10A is different from the display device 10A in that it has a through layer 114. Therefore, description of the same configuration as the display device described above may be omitted.

[0162] The light emitting device 190B, the light emitting device 190G, and the light receiving and emitting device 190R (P D) The laminated structure is not limited to the configuration shown in the display devices 10A and 10B. For example, the laminated structures shown in Figs. 2 to 5 can be appropriately applied.

[0163] [Display device 10C] The display device 10C shown in FIG. 7B does not have the substrate 151 and the substrate 152, but has the substrates 153 and 154. The display device 10 differs from the display device 10B in that it has a second insulating layer 154, an adhesive layer 155, and an insulating layer 212.

[0164] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is attached by an adhesive layer 142 .

[0165] The display device 10C includes an insulating layer 212, a transistor 42, a light receiving / emitting device, and a The device 190R (PD), the light emitting device 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 each have flexibility. This is preferable. The flexibility of the display device 10C can be improved. For example, the substrate 1 It is preferable that the material for 53 and the substrate 154 be resin.

[0166] The substrates 153 and 154 are each made of polyethylene terephthalate (PET). Polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resins Grease, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid amide, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polyp Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers or the like can be used. Alternatively, glass having a sufficient thickness to provide flexibility may be used.

[0167] For the substrate of the display device of this embodiment mode, a film having high optical isotropy may be used. Triacetyl cellulose (TAC, cellulose triacetate) is an example of a film with high optical isotropy. (also called acetate) film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) film and acrylic film.

[0168] [Display device 10D] FIG. 8A shows a cross-sectional view of a display device 10D.

[0169] The light receiving and emitting device detects light emitted by the light emitting device and reflected by an object. The light emitted from the light emitting device is reflected in the display device and is reflected by the light receiving and emitting device without passing through the object. Such stray light may become noise during light detection, resulting in a low S / N ratio ( This reduces the signal-to-noise ratio. In addition, by providing a light-shielding layer BM on the display surface side of the surface on which the light-receiving and light-emitting devices are provided, the This reduces noise and reduces the effect of light on the image. The sensitivity of the sensor can be increased.

[0170] The closer the light-shielding layer BM is to the light-emitting device, the more effectively it can block stray light from the light-emitting device in the display device. On the other hand, the light-shielding layer BM prevents the light from entering the light-receiving device and increases the sensitivity of the sensor. The farther away the light is, the narrower the area of ​​the imaging range of the light receiving and emitting device can be, and the better the imaging resolution. The image quality can be improved.

[0171] Therefore, the distance from the light-shielding layer BM to the light-receiving device and the distance from the light-shielding layer BM to the light-emitting device are Even if a structure (e.g., a resin layer) is provided on the surface on which the light-shielding layer is formed so that there is a difference between the distance By adjusting the layout and thickness of the structure, the light-shielding layer BM to the light-receiving and light-emitting device can be It is possible to increase the distance at the light emitting device and to reduce the distance from the light shielding layer BM to the light emitting device. This makes it possible to reduce sensor noise while increasing the imaging resolution.

[0172] In addition, the distance from the light-shielding layer BM to the light-receiving device and the distance from the light-shielding layer BM to the light-emitting device are If the difference between the distance and is too large, the viewing angle dependence of the color will change. Depending on the purpose of the display device, etc., the structure can be adjusted to a range that balances the display quality and image quality. It is preferable to adjust the layout and thickness of the

[0173] The display device 10D differs from the display device 10A in that a resin layer 159 is provided.

[0174] The resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The receiving element 190G is provided at a position overlapping the optical device 190G and the light emitting device 190B. It is not provided at a position overlapping with the light emitting device 190R (PD).

[0175] For example, as shown in FIG. 8B, the resin layer 159 is formed at a position overlapping the light emitting device 190G and The light emitting / receiving device 190R ( Alternatively, the resin layer 159 may be configured not to be provided at a position overlapping with the photoresist PD. For example, as shown in FIG. 8C, the position where the light emitting device 190G overlaps with the light emitting device 190G and the position where the light emitting device 190G overlaps with the light emitting device 190G are overlapped with the light emitting device 190G. 90B and at a position overlapping the light receiving and emitting device 190R (PD). It may have an opening 159p.

[0176] A light-shielding layer BM is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer BM is provided at a position overlapping the light-emitting device 190B and at a position overlapping the light-emitting device 19 It has openings at a position overlapping with 0G and at a position overlapping with the light receiving and emitting device 190R (PD). .

[0177] For example, the light shielding layer BM is formed by blocking light that passes through the resin layer 159 and is reflected by the surface of the substrate 152 on the substrate 151 side. The light-shielding layer BM can absorb the stray light 23a before it reaches the resin layer 159. 23b. This allows the light incident on the light receiving and emitting device 190R (PD) to be absorbed. Therefore, the noise can be reduced, and the light receiving and emitting device 190R can be In particular, the light-shielding layer BM can improve the sensitivity of the sensor using the light-emitting device. It is preferable that the light shielding layer BM is located close to 190 because stray light can be further reduced. If the light emitting device 190 is located close to the display, the viewing angle dependency of the display can be suppressed. This is also preferable from the viewpoint of improving quality.

[0178] In addition, by providing the light-shielding layer BM, the range in which the light-receiving device 190R (PD) detects light is The position where the light-shielding layer BM is apart from the light-receiving device 190R (PD) can be controlled. When the imaging range is within this range, the imaging resolution can be increased.

[0179] When the resin layer 159 has an opening, the light-shielding layer BM covers at least a part of the opening and It is preferable to cover at least a part of the side surface of the resin layer 159 exposed in the opening.

[0180] When the resin layer 159 is provided in an island shape, the light-shielding layer BM is formed on at least one of the side surfaces of the resin layer 159. It is preferable that both of them are partially covered.

[0181] In this way, since the light-shielding layer BM is provided along the shape of the resin layer 159, The distance to the light emitting device 190 (specifically, the light emitting region of the light emitting device 190) is The light emitting / receiving device 190R(PD) (specifically, the light emitting / receiving device 190R(P D) is shorter than the distance to the light receiving area of ​​the sensor. This reduces the noise of the sensor while Furthermore, the image resolution can be increased and the viewing angle dependency of the display can be suppressed. This makes it possible to improve both the display quality and the imaging quality of the display device.

[0182] The resin layer 159 is a layer that transmits light emitted from the light emitting device 190. Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide a Amido resin, siloxane resin, benzocyclobutene resin, phenolic resin, and their derivatives The structure provided between the substrate 152 and the light-shielding layer BM may be a resin precursor. The thickness of the structure is not limited to the oil layer, and an inorganic insulating film or the like may be used. The distance from the light-shielding layer to the light-emitting device 190R (PD) and the distance from the light-shielding layer to the light-emitting device 190R (PD) are Since it is easy to form a thick organic insulating film such as resin, , is suitable for the structure.

[0183] The distance from the light-shielding layer BM to the light-receiving device 190R (PD) and the distance from the light-shielding layer BM to the light-emitting device In order to compare the distance to the light receiving and emitting device 190 with the distance to the light shielding layer BM, The shortest distance L1 from the end of the OR (PD) side to the common electrode 115 and the light-emitting device of the light-shielding layer BM and the shortest distance L2 from the end on the chair 190 side to the common electrode 115 can be used. Since the shortest distance L2 is shorter than the shortest distance L1, stray light from the light emitting device 190 is suppressed. This can improve the sensitivity of the sensor using the light receiving and emitting device 190R (PD). The shortest distance L1 is longer than the short distance L2, so that the image of the light receiving and emitting device 190R (PD) The image range can be narrowed and the imaging resolution can be increased.

[0184] In addition, the light emitting and receiving devices are located closer to each other than the portion of the adhesive layer 142 that overlaps the light emitting device 190. By making the overlapping part with the 190R (PD) thick, the light-receiving and light-emitting devices can be separated from the light-shielding layer BM. the distance from the light-shielding layer BM to the light-emitting device 190; can make a difference.

[0185] [Display device 10E] FIG. 9A shows a cross-sectional view of a display device 10E. FIG. 9A shows the top views shown in FIG. 9B and FIG. 9C. 1 corresponds to a cross-sectional view taken along dashed line A1-A2 in FIG.

[0186] In a top view (also referred to as a plan view), a light receiving and emitting device 190R (PD) and a light emitting device A light-shielding layer 219 is provided between the light receiving and emitting device 190G. A light-shielding layer 219 is also provided between R(PD) and the light-emitting device 190B. By providing a light-shielding layer between the optical device 190R (PD) and the light-emitting device 190, stray light This can prevent the light from being incident on the light receiving and emitting device 190R (PD).

[0187] As shown in FIG. 9B, the light-shielding layer 219 is adjacent to the plurality of light-receiving and light-emitting devices 190R (PD). As shown in FIG. 9C, the light emitting / receiving device 190R may be adjacent to only one light emitting / receiving device 190R (PD). It is okay to do so.

[0188] As shown in FIG. 9A, the partition 216 separates the light emitting and receiving device 190R (PD) from the light emitting device 190R. 90G, an opening is provided between the light-shielding layer 219 and the light-shielding layer 219. The light-shielding layer 219 covers the openings of the partition walls 216 and the side surfaces of the partition walls 216 exposed at the openings. It is preferable that the light-shielding layer 219 further covers at least a part of the upper surface of the partition wall 216. It is preferable to do so.

[0189] Alternatively, the partition wall 216 may not have an opening, and the light-shielding layer 219 may be provided on the partition wall 216. However, there is a possibility that stray light may pass through the partition 216 and enter the light emitting and receiving device 190R (PD). An opening is provided in the partition wall 216, and a light-shielding layer 219 is provided to fill the opening. As a result, stray light transmitted through the partition wall 216 is absorbed by the light blocking layer 219 at the opening of the partition wall 216. This makes it possible to prevent stray light from entering the light emitting and receiving device 190R (PD).

[0190] The light-shielding layer 219 preferably has a forward tapered shape. The angle between the side surface and the bottom surface of the layer (taper angle) is greater than 0° and less than 90°. As a result, the films (common electrode 115, protective layer 195, etc.) provided on the light-shielding layer 219 The covering ability can be improved.

[0191] The light shielding layer 219 absorbs at least the wavelength of light detected by the light receiving and emitting device 190R (PD). For example, it is preferable to receive the green light emitted by the light-emitting device 190G. When the detector 190R (PD) detects the light, the light-shielding layer 219 absorbs at least green light. For example, if the light-shielding layer 219 has a red color filter, the light-shielding layer 219 can receive green light. This can prevent the reflected light from entering the light receiving and emitting device 190R (PD). The light-shielding layer 219 is a black layer formed using a resin material containing a pigment or a dye. The light-shielding layer 219 may be a matrix. Alternatively, the light-shielding layer 219 may have a laminated structure of a blue filter and a green color filter. In addition, a brown resist material may be used to form a colored insulating layer.

[0192] For example, the light emitting device 190G emits green light and the light emitting device 190R (PD) detects the light. When the light emitting device 190G emits light, the light is reflected by the substrate 152 and the partition wall 216. In this case, the reflected light may be incident on the light receiving / emitting device 190R (PD). The light emitted by 190G passes through the partition 216 and is reflected by the transistor or wiring, etc. In this case, the reflected light may be incident on the light receiving and emitting device 190R (PD). In the case of the reflected light, the light is absorbed by the light shielding layer BM and the light shielding layer 219, and the reflected light is not received. This can prevent the light from entering the light emitting device 190R (PD). This reduces noise. In addition, the sensitivity of the sensor using the light receiving and emitting device 190R (PD) can be improved.

[0193] For example, the light shielding layer BM can absorb much of the stray light 23b before it reaches the substrate 152. Furthermore, even if a part of the stray light 23b is reflected by the light-shielding layer BM, the light-shielding layer 219 can prevent the stray light 23b from being reflected by the light-shielding layer BM. By absorbing b, it is possible to prevent the stray light 23b from entering a transistor, wiring, etc. Therefore, it is possible to prevent stray light from reaching the light receiving and emitting device 190R (PD). The more times the light 23b hits the light-shielding layer BM and the light-shielding layer 219, the more the amount of light absorbed is increased. This makes it possible to extremely reduce the amount of stray light that reaches the light emitting / receiving device 190R (PD). This can be done.

[0194] In addition, the light-shielding layer 219 absorbs light, so that the light is not directly incident on the light-shielding layer 219 from the light-emitting device. The stray light 23d can be absorbed by the light-shielding layer 219. By providing the optical layer 219, stray light incident on the light receiving and emitting device 190R (PD) is reduced. It is possible.

[0195] In addition, by providing the light-shielding layer BM, the range in which the light-receiving device 190R (PD) detects light is The distance between the light-shielding layer BM and the light-receiving device 190R (PD) can be controlled. If it is long, the imaging range becomes narrower and the imaging resolution can be increased.

[0196] [Display device 10F] The display device 10F shown in FIG. 10A does not have a partition wall 216 that transmits visible light, but blocks visible light. It differs from the display device 10D in that it has a partition wall 217.

[0197] The partition 217 preferably absorbs the light emitted by the light emitting device 190. For example, a black matrix is ​​formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the partition wall 21 can be formed with a colored insulating layer. 7 can be configured.

[0198] In the display device 10D (FIG. 8A), light emitted by the light emitting device 190 is guided through the substrate 152 and the The light is reflected by the partition 216, and the reflected light may enter the light receiving and emitting device 190R (PD). In addition, light emitted by the light emitting device 190 passes through the partition wall 216 and is incident on a transistor or a wiring. The reflected light may be incident on the light receiving and emitting device 190R (PD). In the display device 10F, the partition 217 absorbs the light, and the reflected light is This can suppress the light from being incident on the light receiving and emitting device 190R (PD). This can reduce the light receiving and emitting device 190R (PD) and increase the sensitivity of the sensor using the device.

[0199] The partition 217 absorbs at least the wavelength of light detected by the light receiving and emitting device 190R (PD). For example, it is preferable that the light emitting device 190 emits green light and the light emitting device 1 In the case of 90R(PD) detection, the partition 217 preferably absorbs at least green light. For example, if the partition 217 has a red color filter, it will absorb green light. This can prevent the reflected light from entering the light receiving and emitting device 190R (PD).

[0200] The light-shielding layer BM can absorb most of the stray light 23b before it reaches the resin layer 159. A part of the light 23b may be reflected and enter the partition 217. The absorbing structure can prevent the stray light 23b from entering the transistors, wiring, etc. Therefore, the stray light 23c is prevented from reaching the light emitting and receiving device 190R (PD). The more times the stray light 23b hits the light-shielding layer BM and the partition wall 217, the more the light is absorbed. The amount of light that reaches the light receiving / emitting device 190R (PD) can be increased. If the resin layer 159 is too thick, the stray light 23b may penetrate through the light blocking layer. This is preferable because it increases the number of times the BM hits the partition wall 217 .

[0201] In addition, the partition 217 absorbs light, so that the light directly enters the partition 217 from the light-emitting device 190. The stray light 23d incident thereon can be absorbed by the partition wall 217. By providing the wall 217, it is possible to reduce stray light incident on the light receiving and emitting device 190R (PD). This can be done.

[0202] [Display device 10G] The display device 10G shown in FIG. 10B does not have a partition wall 216 that transmits visible light, but blocks visible light. The main difference from the display device 10E is that it has a partition wall 217.

[0203] The light-shielding layer 219 is located on the partition wall 217. The partition wall 217 is different from the partition wall 216 in that it is a light-emitting Since the light emitted by the device can be absorbed, there is no need to provide an opening in the partition 217 . Stray light incident on the partition 217 from the light emitting device is absorbed by the partition 217. Stray light 23 d incident on the light-shielding layer 219 from the source is absorbed by the light-shielding layer 219 .

[0204] In the following, a more detailed configuration of the display device according to one embodiment of the present invention will be described with reference to FIGS. 11 to 15. I will explain this in more detail.

[0205] [Display device 100A] FIG. 11 shows a perspective view of the display device 100A, and FIG. 12 shows a cross-sectional view of the display device 100A. .

[0206] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. 1, substrate 152 is shown by dashed lines.

[0207] The display device 100A includes a display unit 162, a circuit 164, wiring 165, and the like. 1 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display device 100A. Therefore, the configuration shown in FIG. 11 is a display device having a display device 100A, an IC, and an FPC. It can also be called a display module.

[0208] The circuit 164 can be, for example, a scanning line driver circuit.

[0209] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input from the outside via the FPC 172 or from the IC 173 to the wiring 165. is entered.

[0210] In Figure 11, the COG (Chip On Glass) method or the COF (Chip On 1 shows an example in which an IC 173 is provided on a substrate 151 by a method such as a film method. 73 can be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100A and the display module may be configured without an IC. The IC may be mounted on the FPC using the COF method or the like.

[0211] FIG. 12 shows a part of the area including the FPC 172 and the circuit 1 of the display device 100A shown in FIG. 64, a part of the area including the display unit 162, and a part of the area including the end An example of a cross section of each cut is shown.

[0212] The display device 100A shown in FIG. 12 includes a transistor 201 between a substrate 151 and a substrate 152. , transistor 205, transistor 206, transistor 207, light emitting device 190 B, a light emitting device 190G, a light receiving and emitting device 190R (PD), etc.

[0213] The substrate 152 and the insulating layer 214 are bonded to each other via an adhesive layer 142. B. The light emitting device 190G and the light receiving and emitting device 190R (PD) are sealed with a solid sealing structure. Alternatively, a hollow sealing structure or the like can be applied. In FIG. 12, a substrate 152, an adhesive layer 142, and an insulating layer 154 are The space 143 surrounded by the edge layer 214 is filled with an inert gas (such as nitrogen or argon). The adhesive layer 142 is formed on the light emitting device 190B, and the light emitting device 190C is formed on the light emitting device 190B. The light receiving and emitting device 190R (PD) may be provided overlapping the seat 190G. The space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is defined as the adhesive layer 142. may be filled with a different resin.

[0214] The light-emitting device 190B includes, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, and a light-emitting layer 1 93B, a common layer 114, and a common electrode 115 are laminated in this order. The electrode 191 is connected to the conductive layer of the transistor 207 through an opening in the insulating layer 214. Transistor 207 is connected to layer 222b. Transistor 207 controls the driving of light emitting device 190B. The edge of the pixel electrode 191 is covered with a partition wall 216. The electrode 191 includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light. nothing.

[0215] The light-emitting device 190G includes, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, and a light-emitting layer 1 93G, a common layer 114, and a common electrode 115 are laminated in this order. The electrode 191 is connected to the conductive layer of the transistor 206 through an opening in the insulating layer 214. The transistor 206 controls the driving of the light emitting device 190G. It has the function of controlling

[0216] The light emitting / receiving device 190R (PD) is made up of a pixel electrode 191, a common layer 112, and a , an active layer 183, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191 is connected to the transistor through an opening provided in the insulating layer 214. The transistor 205 is electrically connected to the conductive layer 222b. , and has a function of controlling the driving of the light receiving and emitting device 190R (PD).

[0217] The light emitting device 190B, the light emitting device 190G, and the light receiving / emitting device 190R (PD) emit light. The light emitted from the light receiving / emitting device 190R (PD) is emitted toward the substrate 152. Light is incident on the substrate 152 through the space 143. The substrate 152 has a transparent property to visible light. It is preferable to use a material having a high

[0218] The pixel electrode 191 can be manufactured using the same material and process. The conductive layer 114 and the common electrode 115 are connected to the light-emitting device 190B, the light-emitting device 190G, and the receiving It is used in common with the light-emitting device 190R (PD). The structure shown in FIG. 1 is a structure in which an active layer 183 is added to the structure of a light emitting device that emits red light. The light emitting device 190B, the light emitting device 190G, and the light receiving and emitting device 190R (PD) are The configurations of the light-emitting layer 183 and the light-emitting layers 193 of each color are different, but the configurations of all the layers can be the same. This allows the display unit 162 of the display device 100A to have a large number of manufacturing steps. A light receiving function can be added.

[0219] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. device 190B, light emitting device 190G, and light receiving / emitting device 190R (PD), By providing the light-shielding layer BM, the light-receiving and light-emitting device 190R(P D) can control the range in which light is detected. Light is directly incident on the light receiving and emitting device 190R (PD) from the light emitting device 190 without passing through an object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0220] Transistor 201, transistor 205, transistor 206, and transistor 20 7 are all formed on a substrate 151. These transistors are made of the same material and The same process can be used to manufacture the same.

[0221] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 is provided in this order, with a portion of it serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. There is no limit to the number of insulating layers covering the stamper, and each may be a single layer or two or more layers.

[0222] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such as a fluorine-containing compound. This allows the insulating layer to function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the noise and improve the reliability of the display device.

[0223] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. , silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Also, a hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, tungsten oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film , magnesium oxide film, lanthanum oxide film, cerium oxide film, neodymium oxide film, etc. In addition, two or more of the above insulating films may be laminated. A base film may be provided between the transistor and the insulating film. The base film may also be made of the inorganic insulating film. can be done.

[0224] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The insulating film preferably has an opening near the end of the display device 100A. Therefore, it is possible to prevent impurities from entering from the end of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be arranged so that the end of the organic insulating film is located inside the end of the display device 100A. An insulating film may be formed so that the organic insulating film is not exposed at the edge of the display device 100A.

[0225] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, etc. resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resins, and precursors of these resins.

[0226] In the region 228 shown in FIG. 12, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the layer 214, the display unit 1 can be exposed from the outside through the insulating layer 214. Therefore, the reliability of the display device 100A can be improved. It can be done.

[0227] Transistor 201, transistor 205, transistor 206, and transistor 20 7 is a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, The conductive layer 222a and the conductive layer 222b functioning as a source and a drain, and the semiconductor layer 231 , an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 22 functioning as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is disposed between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconducting layer 231 .

[0228] The structure of a transistor included in the display device of this embodiment is not particularly limited. Uses transistors of the same type, staggered type, inverted staggered type, etc. In addition, the present invention can be applied to any of the top-gate and bottom-gate transistor structures. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. Good too.

[0229] Transistor 201, transistor 205, transistor 206, and transistor 20 7, a structure is applied in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The transistor is driven by connecting two gates and applying the same signal to them. Alternatively, a potential for controlling the threshold voltage may be applied to one of the two gates. A driving potential may be applied to the other to control the threshold voltage of the transistor.

[0230] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with partially crystalline regions) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0231] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may include silicon. is amorphous silicon, crystalline silicon (low-temperature polysilicon, single crystal silicon, etc.) ) etc.

[0232] The semiconductor layer may be, for example, a combination of indium and M (where M is gallium, aluminum, silicon, or phosphide). Uranium, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Manium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum one or more selected from the group consisting of tantalum, tungsten, and magnesium; zinc; In particular, M is aluminum, gallium, yttrium, and sulphur. It is preferable that the polysaccharide is one or more selected from the above.

[0233] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use IGZO (intermetallic oxide).

[0234] When the semiconductor layer is an In-M-Zn oxide, the In atoms in the In-M-Zn oxide The atomic ratio of In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of elements is In:M:Zn=1:1:1 or a composition close to that. In:M: Zn=1:1:1.2 or a similar composition, In:M:Zn=2:1:3 or a similar composition Near composition, In:M:Zn=3:1:2 or nearby composition, In:M:Zn=4:2 :3 or a composition close thereto, In:M:Zn=4:2:4.1 or a composition close thereto, I n:M:Zn=5:1:3 or a composition close thereto, In:M:Zn=5:1:6 or a composition close thereto Compositions in the vicinity of In:M:Zn=5:1:7 or compositions in the vicinity of In:M:Zn=5 :1:8 or a composition close thereto, In:M:Zn=6:1:6 or a composition close thereto, I The composition of n:M:Zn=5:2:5 or its vicinity is given. includes a range of ±30% of the desired atomic ratio.

[0235] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or a composition close to that When the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3, and the atomic ratio of Zn is The ratio is 2 to 4. The atomic ratio is In:Ga:Zn=5:1:6. When describing the composition as being close to or equal to the atomic ratio of Ga when the atomic ratio of In is 5, This includes cases where the atomic ratio of Zn is 5 or more and 7 or less. In addition, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or a composition close to that, When the atomic ratio of n is 1, the atomic ratio of Ga is more than 0.1 and is 2 or less, and Zn This includes cases where the atomic ratio is greater than 0.1 and less than 2.

[0236] The transistors in the circuit 164 and the transistors in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the multiple transistors may all be the same, or there may be two or more types.

[0237] A connection portion 204 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is processed with the same conductive film as the pixel electrode 191. The resulting conductive layer 166 is exposed. This allows the connection portion 204 and the FPC 172 to be connected. Electrical connection can be made via interconnect layer 242.

[0238] Various optical members can be arranged on the outside of the substrate 152. Examples of the optical members include a polarizing plate. Examples of the optical components include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, the outside of the substrate 152 is provided with an antistatic film to prevent dust from adhering, It is equipped with a water-repellent film that protects the product from scratches, a hard coat film that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0239] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, or resin. The substrate 151 and the substrate 152 may be made of a flexible material. This can increase the flexibility of the display device.

[0240] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as elastomeric adhesives, anaerobic adhesives, etc. can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (Polyvinyl chloride) resin, PVB (Polyvinyl butyral) resin, EV A (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc., which have high moisture permeability, A material with low adhesion is preferable. Two-part mixed resin may also be used. An adhesive sheet or the like may also be used. It's fine.

[0241] The connection layer is made of anisotropic conductive film (ACF). tive Film), Anisotropic Conductive Paste (ACP) Inductive Paste) can be used.

[0242] In addition to the gate, source, and drain of the transistor, various wiring and power supply circuits that make up the display device are also included. Materials that can be used for the conductive layers, such as the electrodes, include aluminum, titanium, chromium, and nickel. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten These materials include metals such as niobium, as well as alloys that contain these metals as their main components. The film containing the compound can be used as a single layer or as a laminate structure.

[0243] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium. Conductive oxides such as zinc oxide, zinc oxide, zinc oxide containing gallium, etc., or graphene Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as nickel, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (e.g. For example, titanium nitride) may be used. In the case of using a material such as a glass substrate, it is preferable to make the material thin enough to have light transmission properties. A laminated film of the above can be used as the conductive layer. For example, a silver-magnesium alloy and indium It is preferable to use a laminated film of tin oxide or the like, since the electrical conductivity can be increased. These include conductive layers such as various wiring and electrodes that constitute the display device, light-emitting devices, and light-receiving and light-emitting devices. It can also be used for conductive layers in devices (conductive layers that function as pixel electrodes or common electrodes). can.

[0244] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, oxide Examples of the insulating material include inorganic insulating materials such as aluminum.

[0245] [Display device 100B] FIG. 13 shows a cross-sectional view of the display device 100B.

[0246] The display device 100B differs from the display device 100A mainly in that it has a protective layer 195. Detailed description of the configuration similar to that of the device 100A will be omitted.

[0247] The light emitting device 190B, the light emitting device 190G, and the light receiving and emitting device 190R (PD) By providing a covering protective layer 195, light emitting device 190B, light emitting device 190G, and It prevents impurities such as water from entering the light-receiving device 190R (PD) and The reliability of the light emitting device 190B, the light emitting device 190G, and the light receiving and emitting device 190R (PD) is improved. It can be done.

[0248] In a region 228 near the end of the display device 100B, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 195 are in contact with each other. This prevents impurities from entering the display unit 162 from the outside via the organic insulating film. This makes it possible to improve the reliability of the display device 100B.

[0249] The protective layer 195 may be a single layer or a laminated structure. For example, the protective layer 195 may be a common An inorganic insulating layer on the electrode 115, an organic insulating layer on the inorganic insulating layer, and an inorganic insulating layer on the organic insulating layer. In this case, the inorganic insulating film may be formed on the inner surface of the insulating film, and the inorganic insulating film may be formed on the inner surface of the insulating film. It is preferable for the ends to extend outwardly.

[0250] Furthermore, a lens may be provided in the area overlapping with the light receiving and emitting device 190R (PD). This improves the sensitivity and accuracy of the sensor using the light receiving and emitting device 190R (PD). It is possible.

[0251] The lens preferably has a refractive index of 1.3 to 2.5. For example, the insulating layer 10 may be formed using a material containing a resin. The lens can be made of a material containing at least one of an oxide and a sulfide. It can be used in lenses.

[0252] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, Resins containing sulfur and resins containing sulfur can be used for the lenses. Materials containing nanoparticles of materials with higher refractive indexes can be used for lenses. Alternatively, zirconium oxide or the like can be used for the nanoparticles.

[0253] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, Tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin The lens can be made of a material such as a material containing indium, gallium, and zinc. Alternatively, zinc sulfide or the like can be used for the lenses.

[0254] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 adheres the light-emitting device 190B, the light-emitting device 190G, and The light emitting / receiving device 190R (PD) is provided on top of the display device 100B. A solid sealing structure is applied.

[0255] [Display device 100C] FIG. 14A shows a cross-sectional view of the display device 100C.

[0256] The display device 100C differs from the display device 100B in the structure of the transistors.

[0257] The display device 100C includes a transistor 208, a transistor 209, and a It has a transistor 210.

[0258] Transistor 208, transistor 209, and transistor 210 function as gates. a conductive layer 221 functioning as a gate insulating layer, an insulating layer 211 functioning as a gate insulating layer, and a channel forming region 23 1i and a semiconductor layer having a pair of low resistance regions 231n, one of the pair of low resistance regions 231n and a conductive layer 222b connected to the other of the pair of low resistance regions 231n. , an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and The insulating layer 211 is connected to the conductive layer 221 and the channel. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i. It is located between area 231i.

[0259] The conductive layer 222a and the conductive layer 222b are provided on the insulating layer 225 and the insulating layer 215, respectively. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the opening. Of b, one functions as a source and the other functions as a drain.

[0260] The pixel electrode 191 of the light-emitting device 190G is connected to the transistor 208 via the conductive layer 222b. The low-resistance region 231n is electrically connected to one of the pair of low-resistance regions 231n.

[0261] The pixel electrode 191 of the light emitting / receiving device 190R (PD) is connected to a transistor via a conductive layer 222b. The second low resistance region 231n is electrically connected to the second low resistance region 231n of the first electrode 209.

[0262] FIG. 14A shows an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer. In this case, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, forming a low resistance region. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask. In this way, the transistor 202 shown in FIG. 14B can be manufactured. An insulating layer 215 is provided to cover the conductive layer 223 and the insulating layer 215. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n. An insulating layer 218 is provided over the conductive layer 222a and the conductive layer 222b to cover the transistor. This is also fine.

[0263] The display device 100C does not include the substrate 151 and the substrate 152, but includes the substrates 153 and 155. 4, the display device 100 differs from the display device 100B in that it has an adhesive layer 155 and an insulating layer 212.

[0264] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is attached by an adhesive layer 142 .

[0265] The display device 100C includes an insulating layer 212, a transistor 208, and a transistor 209 formed on a fabrication substrate. A transistor 209, a transistor 210, a light receiving / emitting device 190R (PD), and a light emitting device The substrate 153 and the chair 190G are transposed on the substrate 153. It is preferable that the display device 10 and the substrate 154 each have flexibility. The flexibility of 0C can be increased.

[0266] The insulating layer 212 is made of an inorganic insulating film that can be used for the insulating layers 211 and 215. There can be.

[0267] As described above, in the display device of the present embodiment, a light-emitting device is provided for each sub-pixel that exhibits a given color. The light receiving and emitting device is provided instead of the light receiving device. By combining the pixel with the pixel-detecting function, the pixel can be given a light-receiving function without increasing the number of sub-pixels contained in the pixel. In addition, it is possible to provide a pixel with a high resolution without lowering the resolution of the display device or the aperture ratio of each subpixel. It is possible to provide a light receiving function.

[0268] This embodiment mode can be appropriately combined with other embodiment modes. In the case where a plurality of configuration examples are shown in one embodiment, the configuration examples may be appropriately combined. It is possible to do this.

[0269] (Embodiment 2) In this embodiment, a driving method of a display device according to one embodiment of the present invention will be described with reference to FIGS. He explains.

[0270] FIG. 15 shows a circuit diagram representing one pixel of a display device.

[0271] The pixel shown in FIG. 15 has a subpixel (R·PD) that emits red light and has a light receiving function, The pixel has a sub-pixel (G) that emits color light and a sub-pixel (B) that emits blue light.

[0272] The sub-pixel (R·PD) that emits red light and has a light receiving function is made up of a transistor M1R, Transistor M2R, transistor M3R, transistor M11, transistor M12, A transistor M13, a transistor M14, a capacitance Csr, a capacitance Cf, and a light receiving / emitting device Transistor M1R, transistor M3R, transistor M11, transistor M12, and transistor M14 each function as a switch. do.

[0273] The transistor M1R has a gate electrically connected to the wiring GL and a source and a drain One side is electrically connected to the wiring SLR, and the other side is connected to the gate and capacitance Csr The transistor M2R is electrically connected to one of the source and drain electrodes. are the source and drain of the transistor M3R, and the source and drain of the transistor M11. One of the electrodes of the drain, the other electrode of the capacitance Csr, and the anode of the light emitting / receiving device 190R (PD) The other end is electrically connected to the wiring ANODE. M3R has a gate electrically connected to the wiring GL, and the other of the source and drain is connected to the wiring V0 The transistor M11 has a gate electrically connected to the wiring TX. The other of the source and drain is the source or drain of the transistor M12. The transistor M13 is electrically connected to one electrode of the capacitor Cf. The transistor M12 has a gate electrically connected to the wiring RS and the other of the source and drain is connected to the wiring V The transistor M13 has one of a source and a drain electrically connected to the transistor The other is electrically connected to the wiring VPI. The transistor M14 has a gate electrically connected to the wiring SE and a source The other electrode of the capacitance Cf is electrically connected to the wiring V The cathode of the light emitting / receiving device 190R (PD) is electrically connected to the wiring CAT Electrically connected to HODE / VPD.

[0274] The subpixel (G) that exhibits green light is formed by transistors M1G, M2G, and The transistor M1G and the light emitting device 190G are connected to the transistor M3G, the capacitance Csg, and the light emitting device 190G. and transistor M3G each function as a switch.

[0275] The transistor M1G has a gate electrically connected to the wiring GL and a source and a drain One side is electrically connected to the wiring SLG, and the other side is connected to the gate and capacitance Csg of the transistor M2G. The transistor M2G is electrically connected to one of the source and drain electrodes. is connected to one of the source and drain of the transistor M3G, the other electrode of the capacitance Csg, and The anode of the optical device 190G is electrically connected to the anode of the optical device 190G, and the other is electrically connected to the wiring ANODE. The transistor M3G has a gate electrically connected to the wiring GL and a source The other drain is electrically connected to the wiring V0. The cathode of the light emitting device 190G is It is electrically connected to the wiring CATHODE / VPD.

[0276] The subpixel (B) that exhibits blue light is made up of transistors M1B, M2B, and Transistor M1B, capacitance Csb, and light emitting device 190B. and transistor M3B each function as a switch.

[0277] The transistor M1B has a gate electrically connected to the wiring GL and a source and a drain One side is electrically connected to the wiring SLB, and the other side is connected to the gate and capacitance Csb The transistor M2B is electrically connected to one of the source and drain electrodes. is connected to one of the source and drain of the transistor M3B, the other electrode of the capacitance Csb, and The anode of the optical device 190B is electrically connected to the anode of the optical device 190B, and the other is electrically connected to the wiring ANODE. The transistor M3B has a gate electrically connected to the wiring GL, and a source and The other drain is electrically connected to the wiring V0. The cathode of the light emitting device 190B is It is electrically connected to the wiring CATHODE / VPD.

[0278] The wiring GL, the wiring SE, the wiring TX, and the wiring RS each have a transistor that controls the operation of the transistor. A signal is provided to control the

[0279] When an image is displayed, the wiring SLR, the wiring SLG, and the wiring SLB are connected to the image signal line. Signals VdataR, VdataG, and VdataB are supplied.

[0280] Wiring V0, wiring VPI, wiring VCP, wiring VRS, wiring ANODE, and wiring CATHO A predetermined potential is supplied to each of the DE / VPD. A potential Vo (for example, 0V) corresponding to the black display of R, VdataG, and VdataB is supplied. A potential higher than the range of the gate voltage of the transistor M13 is supplied to the line VPI. An arbitrary potential (for example, 0 V) ​​can be supplied to the wiring VCP. A potential lower than that of the wiring CATHODE / VPD is supplied to the wiring ANODE. A higher potential is supplied than line CATHODE / VPD.

[0281] Transistor M1R, transistor M1G, transistor M1B, transistor M3R, The transistor M3G and the transistor M3B are controlled by a signal supplied to the wiring GL. and functions as a selection transistor for controlling the selection state of the pixel.

[0282] The transistor M2R is connected to the light receiving and emitting device 190R (PD ) serves as a drive transistor to control the current flowing through transistor M2. G and transistor M2B respectively turn on and off the light emitting device 1 in response to a potential supplied to their gates. 90G, which functions as a drive transistor that controls the current flowing through the light-emitting device 190B .

[0283] When the transistor M1R is in a conductive state, the transistor M3R is also in a conductive state at the same time. A potential (for example, an image signal VdataR) supplied to the wiring SLR is The potential Vo supplied to the gate and the wiring V0 is supplied to the source of the transistor M3R. The capacitance Csr accumulates a charge according to the voltage VdataR-Vo. The device 190R (PD) responds to the potential of the node GR (the gate potential of the transistor M2R). It can emit light at a brightness that matches the light intensity.

[0284] Similarly, when the transistor M1G is in a conductive state, the transistor M3G is also in a conductive state at the same time. A potential (for example, an image signal VdataG) supplied to the wiring SLG is The potential Vo supplied to the gate of M2G and the potential Vo supplied to the wiring V0 is applied to the source of the transistor M3G. The charge corresponding to the voltage VdataG-Vo is stored in the light emitting device 19. 0G can emit light with a luminance according to the gate potential of the transistor M2G. When the transistor M1B is in a conductive state, the transistor M3B is also in a conductive state at the same time. A potential (for example, an image signal VdataB) supplied to the wiring SLB is The potential Vo supplied to the gate and the wiring V0 is supplied to the source of the transistor M3B. The capacitance Csb accumulates a charge according to the voltage VdataB-Vo. The device 190B can emit light with a brightness according to the gate potential of the transistor M2B. .

[0285] The transistor M11 is controlled by a signal supplied to the wiring TX, and the light emitting / receiving device 19 This function controls the timing at which the potential of node FD changes depending on the current flowing through OR(PD). The transistor M12 is controlled by a signal supplied to the wiring RS. The potential of the node FD connected to the gate of the transistor M13 is reset to the potential supplied to the wiring VRS. The transistor M13 outputs a signal according to the potential of the node FD. The transistor M14 functions as an amplifier transistor. The output corresponding to the potential of the node FD is read out by an external circuit connected to the wiring WX. It functions as a selection transistor for

[0286] In a display device of one embodiment of the present invention, all of the transistors included in the pixel shown in FIG. A transistor having a metal oxide (also called an oxide semiconductor) in the semiconductor layer in which a channel is formed. It is preferable to use an OS transistor (hereinafter also referred to as an OS transistor). The off-state current is extremely small, and the charge stored in the capacitor connected in series with the transistor is maintained for a long time. In addition, by using OS transistors, it is possible to hold the display The power consumption of the device can be reduced.

[0287] Alternatively, in a display device according to one embodiment of the present invention, all of the transistors included in the pixel shown in FIG. In particular, transistors that have silicon in the semiconductor layer in which the channel is formed (hereafter, Si transistors) It is preferable to use silicon such as single crystal silicon or polycrystalline silicon. Silicon, amorphous silicon, etc. In particular, low-temperature polysilicon (LTP S (Low Temperature Poly-Silicon) It is preferable to use an LTPS transistor. A transistor has high field effect mobility and is capable of high speed operation.

[0288] Furthermore, by using Si transistors such as LTPS transistors, This makes it easy to integrate the various circuits that make up the display unit on the same substrate. This simplifies the external circuitry mounted on the display device, reducing component and mounting costs. It is possible.

[0289] Alternatively, in the display device according to one embodiment of the present invention, a sub-pixel (R·PD) having a light receiving and emitting device is In particular, it is preferable to use two types of transistors in the subpixel. It is preferable that the transistor has a LTPS transistor. By changing the material of the semiconductor layer according to the function to be performed, This will improve the quality of the pixel circuits in the PD and increase the accuracy of sensing and imaging. In this case, the subpixel (G) having the light-emitting device and the subpixel (B) have an OS transistor and an L Either one or both of the TPS transistors may be used.

[0290] Furthermore, two types of transistors (e.g., OS transistors and LTPS transistors) are used in the pixel. Even if a power supply is used, the use of LTPS transistors reduces the power consumption by 100% compared to a CMOS circuit. This makes it easy to integrate the various circuits that are displayed on the same substrate as the display unit. The external circuitry can be simplified, reducing component and implementation costs. can.

[0291] A transistor using metal oxides that has a wider band gap and a lower carrier density than silicon. The transistor can realize an extremely small off-current. The charge stored in the capacitor connected in series with the transistor is maintained for a long period of time by the Therefore, it is possible to maintain the capacitance Csr, capacitance Csg, capacitance Csb, or The transistors M1R, M1G, and M 1B, transistor M3R, transistor M3G, transistor M3B, transistor M It is preferable to use OS transistors for transistors 11 and M12.

[0292] It is preferable to use a Si transistor for the transistor M13. Therefore, the image data can be read out at high speed.

[0293] In FIG. 15, the transistors are shown as n-channel transistors. However, a p-channel transistor can also be used. The present invention is not limited to a gate, and may further include a back gate.

[0294] A light emitting / receiving device 190R (PD), a light emitting device 190G, or a light emitting device 190B and providing one or more layers having one or both of a transistor and a capacitor at a position overlapping the This makes it possible to reduce the effective area occupied by each pixel circuit, and thus to realize a high-definition image. A display unit can be realized.

[0295] 16A and 16B show an example of a method for driving a display device. 18A and 18B show timing charts of each operation.

[0296] As shown in FIG. 16A, when an image is displayed, an image signal is written for each row.

[0297] FIG. 17A shows a timing chart of a write operation P1 of an image signal in the nth row of pixels. show.

[0298] First, before time T1, wiring GL <n>The potential of the wiring TX and wiring RS is set to high potential. <n>, and wiring SE <n>This causes the potentials of the transistors M 1R and transistor M3R are conductive, and the potential of the wiring SLR is DataR <n>and wiring V0 Potential difference of potential Vo (Voltage DataR <n>-Vo) is stored in the capacitance Csr. In addition, the transistors M1G and M3G are turned on, and the potential Da TA <n>and the potential difference between the potential Vo of the wiring V0 (voltage DataG <n>-Vo) according to The charge is stored in the capacitance Csg. Furthermore, the transistor M1B and the transistor M3B are Through, potential DataB of wiring SLB <n>and the potential difference between the potential Vo of the wiring V0 (Voltage Data B <n>At this time, a charge corresponding to the voltage V−Vo is stored in the capacitance Csb. <m>of The potential is low.

[0299] Next, between time T1 and time T2, wiring GL <n>By lowering the potential of the transistor, The resistors M1R, M1G, M1B, M3R, M3G, and M3B are non-conductive, and the capacitances Csr, The charges stored in Csg and Csb are retained, and the image signal writing operation is completed. Based on the gate potentials of the transistors M2R, M2G, and M2B, the light receiving and emitting device 190R (P D), light emitting device 190G, and light emitting device 190B each emit light.

[0300] FIG. 16B shows a global shutter system image captured by a light emitting / receiving device 190R (PD). As shown in FIG. 16B, the light receiving and emitting device 190R (PD When imaging is performed using the MOS transistor, first, an image signal for imaging is written for each row, Next, while retaining the written data, the sub-pixels with light receiving function are initialized ( Reset operation, exposure (accumulation) operation, and transfer operation are performed in sequence, and then the image data is Detection is performed by reading out the

[0301] FIG. 17B shows a timing chart of a write operation P2 of an image signal for imaging in the pixels in the nth row. Here, a light emitting device 190G is used as a light source, and a light receiving / emitting device 190R is used as a light source. An example of imaging with (PD) is shown below.

[0302] First, before time T3, wiring GL <n>The potential of the wiring TX and wiring RS is set to high potential. <n>, and wiring SE <n>This causes the potentials of the transistors M The transistors 1R and M3R are turned on, and the potential Vb of the wiring SLR and the potential Vo of the wiring V0 are A charge corresponding to the potential difference (voltage Vb-Vo) is stored in the capacitance Csr. Also, the transistor M The transistors 1G and M3G are turned on, and the potential Vem of the wiring SLG and the potential Vo of the wiring V0 A charge corresponding to the potential difference (voltage Vem-Vo) is stored in the capacitance Csg. The transistors M1B and M3B are turned on, and the potential Vb of the wiring SLB and the potential V A charge corresponding to the potential difference (voltage Vb-Vo) between the wiring WX <m>The potential is a low potential.

[0303] Here, the potential Vb of the wiring SLR is the gate-source voltage ( Vgs) and the threshold voltage (Vth) in the transistor M2R, and is set to a potential that satisfies Vgs = Vb - V0 < Vth. Thereby, the transistor M2R can be completely turned off.

[0304] The potential Vem of the wiring SLG is a potential for causing the light-emitting device 190G to emit light. As the potential Vem, it is preferable to supply a potential at which the light emission of the light-emitting device 190G has sufficient luminance for imaging. This is preferred.

[0305] To the wiring SLB, a potential at which the light-emitting device 190B does not emit light is supplied. In FIG. 17B, an example in which the potential Vb is supplied to the wiring SLB is shown, but it is not limited thereto. The potential supplied to the wiring SLB may be the same as or different from the potential supplied to the wiring SLR. Also, when the light-emitting device 190B is also used as a light source during imaging, the wiring SLB is supplied with a potential for causing the light-emitting device 190B to emit light. This is supplied.

[0306] Next, between time T3 and time T4, the wiring GL <n>By lowering the potential of the transistor, The resistors M1R, M1G, M1B, M3R, M3G, and M3B are non-conductive, and the capacitances Csr, The charges stored in Csg and Csb are retained, and the writing operation of the image signal for imaging is completed. Based on the gate potential of transistor M2G, light emitting device 190G emits light.

[0307] FIG. 17C shows a timing chart of the initialization (reset) operation P3.

[0308] At time T5, the wiring TX and the wiring RS <n>By setting the potential of 11 and the transistor M12 are turned on. As a result, the light receiving and emitting device 190R (PD The potential of the anode of the transistor 101 and the potential of the node FD are reset to the potential supplied to the wiring VRS. Since node GR is floating, Vgs is stored and can be set to the potential of node SA. Regardless of the voltage, the transistor M2R remains off. By supplying a potential lower than that of the PD, a reverse bias is applied to the light-receiving device 190R (PD). You can make a call.

[0309] At time T6, the wiring TX and the wiring RS <n>By setting the potential of Transistor M11 and transistor M12 become non-conductive, and the initialization operation ends.

[0310] FIG. 17D shows a timing chart of the exposure (accumulation) operation P4.

[0311] During the period from time T7 to time T8, the light receiving and emitting device 190R (PD) By receiving the light emitted by the 0G, an electric charge is generated. Charge is accumulated in the capacitance of R(PD), and the potential of the node SA increases to D) The potential corresponds to the charge generated.

[0312] In addition, between time T7 and time T8, the wiring SLR, the wiring SLG, the wiring SLB, and the wiring GL <n>, wiring TX, wiring RS <n>, Wiring SE <n>, and wiring WX <m>is low potential It is possible.

[0313] FIG. 18A shows a timing chart of the transfer operation P5.

[0314] At time T9, the potential of the wiring TX is set to a high potential, so that the transistor M11 is turned on. This transfers charge from node SA to node FD. In other words, the potential of node FD becomes a potential according to the charge generated in the light emitting and receiving device 190R (PD).

[0315] At time T10, the potential of the wiring TX is set to low, so that the transistor M11 is turned off. This completes the transfer operation.

[0316] FIG. 18B shows a timing chart of the sensing operation P6.

[0317] At time T11, the potential of the wiring SE is set to a high potential, so that the transistor M14 is turned on. The potential of the line WX is set to a potential corresponding to the charge generated in the light receiving and emitting device 190R (PD). This allows an output according to the charge generated in the light receiving and emitting device 190R (PD). sig can be read out by an external circuit connected to the wiring WX. The transistor 3 can also be considered to be included in the source follower circuit.

[0318] At time T12, the potential of the wire SE remains high, and the potential of the wire RS <n>By making the potential of Then, the transistor M12 becomes conductive, and the potential of the wiring WX is set to a potential corresponding to the potential of the wiring VRS. By reading out the background potential, the external circuit resets the By removing the fixed pattern noise caused by the transistor M13 from the read output signal, This reduces the effect of variations in the characteristics of the transistor M13 between pixels. It is possible.

[0319] At time T13, wiring RS <n>By setting the potential of It becomes common.

[0320] At time T14, wiring SE <n>By setting the potential of This completes the detection operation.

[0321] By repeating the operation from time T3 to time T14, imaging can be performed repeatedly. In addition, the OS transistors M1R, M2R, M1G, M2G, M1B, and M2B are When a transistor is used, it is possible to hold the image signal for imaging for a long period of time. Therefore, the frequency of the write operation P2 of the image signal for use can be reduced. After performing the operation from time T3 to time T14, the operation from time T5 to time T14 is performed as specified. The number of times may be repeated, and then the operation may return to the operation at time T3.

[0322] The display device of the present embodiment has an image display mode, an image capture mode, and an image display mode. The image display mode can be used in either the image display mode or the image capture mode. In the mode for taking pictures, for example, a full-color image can be displayed. For example, an image for imaging (e.g., a single color of green, a single color of blue, etc.) is displayed, and a light receiving / emitting device is used. In the imaging mode, for example, fingerprint authentication can be performed. In addition, in a mode in which image display and image capture are performed simultaneously, for example, some pixels may emit An image to be captured is captured using an optical device (light emitting device 190G or light emitting device 190B). The remaining pixels are displayed, and the light receiving and emitting device 190R (PD) is used to capture an image. Using the light receiving and emitting devices, full color images can be displayed. .

[0323] An example of an operation method in a mode in which image display and image capture are performed simultaneously will be described with reference to FIG.

[0324] In Figure 19, the subpixels (R·PD) and (G) in the first row and the subpixels (R·P 15 shows the pixel circuits of the sub-pixels (D) and (G). The circuit configuration of each sub-pixel is the same as that in FIG.

[0325] In the following example, the image is displayed using the sub-pixels (R PD) and sub-pixels (G) in the first row, and This shows an example of imaging using the sub-pixels (R·PD) and (G).

[0326] First, the potential of the wiring GL1 in the first row is set to a high potential, and the potential of the wiring TX, the wiring RS1, and the wiring SE This causes the transistors in the subpixels (R PD) to The transistors M1R and M3R of the subpixel (G) and the transistors M1G and M3G of the subpixel (G) are turned on. Image signals are supplied from the wirings SLR and SLG. At this time, the potential of the wiring WX1 is low. Next, the potential of the wiring GL1 is set to a low potential, so that the transistors M1R and M1 G, M3R, and M3G become non-conductive, and the image signal writing operation ends. Based on the gate potentials of M2R and M2G, the light-receiving device 190R (PD) and the light-emitting device Each of the 190G lights up.

[0327] Next, the potential of the wiring GL2 in the second row is set to a high potential, and the wiring TX, wiring RS2, and wiring SE The potential of each of the sub-pixels (R PD) and (R PD ... The transistors M1R and M3R of the subpixel (G) and the transistors M1G and M3G of the subpixel (G) are turned on. A potential that turns off the transistor M2R completely is supplied from the wiring SLR, and An image signal for imaging is supplied from the SLG. At this time, the potential of the wiring WX2 is low. Next, the potential of the wiring GL2 is set to a low potential, so that the transistors M1R, M1G, and M3R , M3G becomes non-conductive, and the signal write operation ends. Based on the potential, the light emitting device 190G emits light. By performing the transfer and detection operations, the sub-pixel (R·PD) can capture an image. Cut.

[0328] 20A to 20C, a display device according to one embodiment of the present invention is applied to the display portion 6001. The functions of the child device 6000 will now be described.

[0329] As shown in FIG. 20A, the display unit 6001 can function as a touch panel. The display unit 6001 detects the touch of a finger 6003 while displaying a full-color image. It is possible.

[0330] FIG. 20B shows an example of performing fingerprint authentication on a finger 6003 touching the top surface of the display unit 6001. 0C is an example in which fingerprint authentication is performed on a finger 6003 that touches the side surface of a display unit 6001. Since the entire display unit of the device has a light receiving function, a fingerprint sensor is required separately from the display unit in electronic devices. In comparison with the case where the fingerprint sensor is equipped with a fingerprint sensor, the degree of freedom of the area to be used for fingerprint authentication can be increased. A display device according to one embodiment of the present invention functions as a display panel, a fingerprint sensor, and a touch sensor. Since the two components are provided separately, it is not necessary to provide each separately, which contributes to making electronic devices smaller, thinner, and lighter. It is possible to quantify it.

[0331] As described above, the display device of the present embodiment has a sub-division that emits red light and has a light receiving function. A pixel (R·PD) can be used for both image display and light detection. It is also possible to use some of the pixels (R·PD) for image display and the rest for light detection. As a result, the display device of this embodiment can be operated in a variety of modes, including an image display mode, an image capture mode, and an image capture mode. The device can be driven in either a mode in which image display and image capture are performed simultaneously.

[0332] This embodiment mode can be combined with other embodiment modes as appropriate.

[0333] (Embodiment 3) In this embodiment, a driving method of a display device according to one embodiment of the present invention will be described with reference to FIGS. I will use this to explain.

[0334] In this embodiment, a display device according to one embodiment of the present invention is used as a touch panel. I will explain it below.

[0335] Since high resolution is required for fingerprint imaging, the imaging data obtained using a light-receiving device is The data is preferably read out individually for every pixel (pixel by pixel). On the other hand, if it is to function as a touch panel, a higher resolution is required compared to fingerprint authentication. However, it is required to perform read operations at high speed.

[0336] For example, the driving frequency can be increased by performing touch detection on multiple pixels at once. For example, the number of pixels read simultaneously can be set to 4 pixels (2 x 2 pixels), 9 pixels (3 x 3 pixels), or can be appropriately determined as 16 pixels (4×4 pixels), etc.

[0337] Figure 21A shows the image data of the light-receiving devices (R·PD) included in multiple pixels. Here is an example of reading it.

[0338] Each pixel 300 includes a sub-pixel (R·PD) having a light receiving function and a sub-pixel ( In FIG. 21A, the unit 310 has a subpixel (G) that emits blue light, and a subpixel (B) that emits blue light. In the example shown, the unit 310 has nine pixels 300 (3×3 pixels). The pixels 300 included in the same unit 310 simultaneously receive image data. For example, first, the imaging data of the unit 310a is read out, and then the imaging data of the unit 310b is read out. The imaging data of the unit 310b is read out. In comparison with the case where the number of read operations is reduced, the driving frequency can be increased. The image data of the unit 310a is stored in a memory of a plurality of pixels 300 (here, nine pixels 300). ) image data is added together, so the sense is clearer than when capturing images one pixel at a time. The degree can be increased.

[0339] Alternatively, touch detection may be performed using only some of the pixels. The pixels are divided into 1 pixel per 4 pixels (2 x 2 pixels) and 1 pixel per 100 pixels (10 x 10 pixels). It can be decided appropriately as 1 pixel, or 1 pixel per 900 pixels (30 x 30 pixels), etc. Cut.

[0340] FIG. 21B shows an example in which touch detection is performed using only some of the pixels.

[0341] Each pixel 300 includes a sub-pixel (R·PD) having a light receiving function and a sub-pixel ( The target pixel 32 to be read out has a sub-pixel (G) that emits blue light, and a sub-pixel (B) that emits blue light. 21B, only the pixel 300 surrounded by the dashed line is used for touch detection. In this example, the pixel 320 is one pixel out of nine pixels (3×3 pixels). The number of pixels is not particularly limited. First, the image data of the target pixel 320a is read out, and then the target pixel The image data of the pixel 320b is read out. No imaging data is read out from the pixels 300 in the Compared to reading out image data from pixels, the number of readouts can be reduced and the drive frequency can be increased. It is possible.

[0342] In addition, if only a specific pixel 300 is used as the target pixel 320, the other pixels 300 and the receiving and transmitting There may be differences in the degree of deterioration of the optical device. It is preferable to use one pixel out of every nine pixels as the target pixel 320. When the pixel 320 is used as the target pixel, the target pixel 320 is shifted by one row or one column, and three pixels are intersected. Alternatively, all nine pixels may be used as the target pixel 320 in turn. It may also be used.

[0343] A display device according to one embodiment of the present invention has two or more operation modes for a light receiving and emitting device. The operating modes are preferably switchable between each other. For example, for all pixels: Switch between a mode in which each pixel is read out individually and a mode in which multiple pixels are read out together Alternatively, it is preferable to select a mode in which all pixels are read out and a mode in which only some pixels are read out. It is preferable that the mode in which only the element is read out can be switched to the mode in which only the element is read out. When capturing fingerprint images, images are captured at high resolution, and when the images are displayed, touch detection is performed at a high drive frequency. It is possible to make an exit.

[0344] In addition, when performing touch detection, it is preferable to eliminate the influence of ambient light, which can cause noise. .

[0345] For example, in some pixels, the light-emitting device is periodically turned on and off, By obtaining the difference in the detection intensity of the light-receiving device when it is turned on (lighted on), the influence of ambient light is eliminated. The pixels that are repeatedly turned on and off can be used to detect the image being displayed on the display device. It is preferable to provide multiple frames as long as they do not cause any adverse effect. The light-emitting device changes every frame, with lit pixels being switched for unlit pixels. It is preferable that the light source be turned on and off repeatedly. The color of the light emitted when turned on is not particularly limited.

[0346] In FIG. 22A, the pixels 330a and 330d are turned off, and the pixels 330b and 330 In FIG. 22B, pixel 330a and pixel 330d are lit, and pixel 3 30b, and pixel 330c are off.

[0347] Since pixel 330b detects ambient light, the detection intensity of the light receiving and emitting device is On the other hand, pixel 330d detects reflected light from finger 340, The detection intensity of the light-receiving device changes when the light-emitting device is turned on and off. The influence of ambient light can be eliminated by utilizing the difference in detection intensity between when the light is on and when it is off.

[0348] As described above, the display device of the present embodiment has a mode in which each unit captures an image and a mode in which each unit receives and emits light. For example, the device can be driven in either a high-speed When operation is required, a mode in which imaging is performed for each unit can be used. When high-resolution imaging is required, imaging is performed pixel by pixel (each light-receiving device). By changing the driving mode according to the application, the display device The functionality of the device can be improved.

[0349] This embodiment mode can be combined with other embodiment modes as appropriate.

[0350] (Embodiment 4) In this embodiment, a pixel layout that can be used in a display device according to one embodiment of the present invention will be described. The arrangement of the sub-pixels is not limited to the order shown in the figure. For example, The positions of the sub-pixel (A) and the sub-pixel (B) may be reversed.

[0351] The pixel shown in FIG. 23A is a sub-pixel (R·PD) that emits red light and has a light receiving function. It has a sub-pixel (G) that emits green light and a sub-pixel (B) that emits blue light. (R·PD) is arranged in a different column from subpixel (G) and subpixel (B). Subpixel (G) The sub-pixels (A) and (B) are alternately arranged in the same column, one in the odd-numbered rows and the other in the even-numbered rows. Note that the sub-pixels arranged in a column different from the sub-pixels of other colors are limited to the red (R) sub-pixels. The color may be green (G) or blue (B).

[0352] FIG. 23B shows two pixels, with one pixel being composed of three sub-pixels surrounded by dotted lines. The pixel shown in FIG. 23B is a sub-pixel that emits red light and has a light receiving function. A pixel (R·PD), a sub-pixel (G) that emits green light, and a sub-pixel (B In the pixel on the left shown in FIG. 23B, the subpixel (G) is in the same row as the subpixel (R PD). In FIG. 23B, sub-pixel (B) is arranged in the same column as sub-pixel (R PD). In the pixel on the right shown in Figure 1, the subpixel (G) is located in the same row as the subpixel (R PD), and the subpixel (G In the pixel layout shown in FIG. 23B, the odd-numbered subpixels (B) are arranged in the same column. In both the even and even rows, the sub-pixels (R PD), (G), and (B) are arranged repeatedly, and in each column, odd and even rows are of different colors. The sub-pixels are arranged.

[0353] FIG. 23C is a modified example of the pixel array shown in FIG. 1G. The pixel consists of a sub-pixel (R·PD) that emits red light and has a light receiving function, and a sub-pixel (R·PD) that emits green light. The lower left pixel and the upper right pixel shown in FIG. 23C have a sub-pixel (G) that emits red light. The sub-pixels (R·PD) emit blue light and have a light-receiving function, and the sub-pixels (B·PD) emit blue light and have a light-receiving function. ).

[0354] In FIG. 1G, each pixel is provided with a subpixel (G) that emits green light. In this case, each pixel is provided with a sub-pixel (R·PD) that emits red light and has a light receiving function. Since each pixel has a sub-pixel having a light receiving function, the configuration shown in FIG. In the configuration shown in FIG. 1G, the imaging can be performed with higher resolution. For example, the accuracy of biometric authentication can be improved.

[0355] The top surface shape of the light emitting device and the light receiving and emitting device is not particularly limited, and may be a circle, an ellipse, a polygon, or the like. , a polygon with rounded corners, etc. FIG. 1G shows an example where the shape is a circle, and FIG. 23C shows an example where the shape is a square. The top surface shapes of the light-emitting devices and light-receiving / light-emitting devices of each color may be different from each other. Or it may be the same for all colors.

[0356] The aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all of the colors. For example, a sub-pixel (G in FIG. 1G, sub-pixel (G) in FIG. 23) provided in each pixel may be In C, even if the aperture ratio of the sub-pixel (R PD) is made smaller than that of the sub-pixels of other colors, good.

[0357] FIG. 23D is a modified example of the pixel array shown in FIG. 23C. Specifically, the configuration of FIG. 23D is as follows: This is obtained by rotating the configuration of FIG. 23C by 45°. In FIG. 23C, the two sub-pixels Although the above description assumes that one pixel is configured, as shown in FIG. 23D, the pixel is divided into four sub-pixels. It can also be considered that one pixel is made up of these.

[0358] In FIG. 23D, it is explained that one pixel is composed of four sub-pixels surrounded by dotted lines. Each pixel consists of two sub-pixels (R PD), one sub-pixel (G), and one In this way, one pixel has a plurality of sub-pixels having a light receiving function. By having a high-resolution image, it is possible to capture images with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the resolution of the image can be set to the root of 2 times the resolution of the display. Cut.

[0359] The display device to which the configuration shown in FIG. 23C or FIG. 23D is applied has p (p is an integer of 2 or more) q (q is an integer of 2 or more) second light-emitting devices; and r (r p and r are integers greater than p and greater than q), and In addition, p, q, and r satisfy r=p+q. One of the devices emits green light and the other emits blue light. It emits light and has a light receiving function.

[0360] For example, when a light-receiving device is used to perform touch detection, light emitted from a light source is visible to a user. Blue light is less visible than green light, so blue light It is preferable that the light source is a light emitting device that emits blue light. It is preferable that the color filter has a function of receiving light of various colors.

[0361] As described above, pixels having various arrangements can be applied to the display device of one embodiment of the present invention. do.

[0362] This embodiment mode can be combined with other embodiment modes as appropriate.

[0363] (Embodiment 5) In this embodiment, the semiconductor device can be used for the OS transistor described in the above embodiment. Metal oxides (also called oxide semiconductors) will be described.

[0364] The metal oxide preferably contains at least indium or zinc. In particular, indium In addition to these, aluminum, gallium, yttrium, and zinc are preferably included. It is preferable that the alloy contains thorium, tin, etc. Also, boron, silicon, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium A metal selected from aluminum, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more species.

[0365] <Classification of crystal structures> First, classification of crystal structures in oxide semiconductors will be described with reference to FIG. 24A. FIG. 24A shows an oxide semiconductor, typically IGZO (a metal oxide semiconductor containing In, Ga, and Zn). FIG. 1 is a diagram explaining the classification of crystal structures of metals (oxides).

[0366] As shown in FIG. 24A, oxide semiconductors are broadly divided into "amorphous" ", "Crystalline" and "Crystal" In addition, "Amorphous" includes completely amorp hous is included. Also, "Crystalline" includes CAAC (c-ax is-aligned crystalline), nc(nanocrystalli ne), and cloud-aligned composite (CAC). The classification of "Crystalline" includes single crystal, pol y crystal and completely amorphous are excluded. "Crystal" includes single crystal and poly crystal. Contains stal.

[0367] The structures in the bold frames in FIG. 24A are classified into two types: "Amorphous" and "Cryptozoic". It is an intermediate state between "crystal" and "new crystal" This structure belongs to the line phase. Completely different from the stable "Amorphous" and "Crystal" This can be rephrased as a structure in which

[0368] The crystal structure of the film or substrate was determined by X-ray diffraction (XRD). The quartz glass substrate and the "Cr IGZO (also called crystalline IGZO) has a crystal structure classified as "crystalline" XRD obtained by GIXD (Grazing-Incidence XRD) measurement of the film The spectra are shown in Figures 24B and 24C, respectively. This is also called the Seemann-Bohlin method. Hereafter, the GIXD measurements shown in Figures 24B and 24C The XRD spectrum obtained by the measurement is simply referred to as the XRD spectrum. FIG. 24B and FIG. 24C are the XRD spectra of the crystalline IGZO film. The vertical axis Intensity [au] of FIG. 24C indicates the intensity (arbitrary unit). The composition of the crystalline IGZO film shown in Fig. 1 is approximately In:Ga:Zn=4:2:3 [atomic ratio]. The thickness of the crystalline IGZO film shown in FIG. 24C is 500 nm.

[0369] As shown by the arrow in FIG. 24B, the shape of the peak in the XRD spectrum of the quartz glass substrate is On the other hand, as shown by the arrow in Figure 24C, the crystalline IGZO film has a large area of ​​X The peak shape of the RD spectrum is asymmetric. The peak shape of the XRD spectrum is asymmetric. The asymmetry clearly indicates the presence of crystals in the film or substrate. If the peak shape of the XRD spectrum is not symmetrical, the film or substrate is in an amorphous state. In addition, in FIG. 24C, a crystal phase (IGZO The left-right asymmetrical XRD spectrum is clearly indicated. The symmetric peak is presumed to be due to the diffraction peak of the crystalline phase (microcrystals). do.

[0370] Specifically, the interference of X-rays scattered by atoms in IGZO is 2θ=34° or It is assumed that the small crystals contribute to the peaks around 2θ=31°. It is assumed that this contributes to the peak near the peak in the XRD spectrum of the crystalline IGZO film shown in Figure 24C. The spectrum has a wide peak width on the low angle side at or near 2θ=34°. This is due to the presence of a peak at or near 2θ=31° in the crystalline IGZO film. This suggests the presence of tiny crystals.

[0371] The crystal structure of the film or substrate was also analyzed by nano-beam electron diffraction (NBED). Diffraction patterns observed by electron diffraction (ultra-microelectron The quartz glass substrate and the substrate temperature The diffraction patterns of the IGZO film formed at room temperature are shown in Figures 24D and 24E, respectively. FIG. 24D shows the diffraction pattern of the quartz glass substrate, and FIG. 24E shows the diffraction pattern of the IGZO film. The IGZO film shown in 4E is an oxide ternary layer with an atomic ratio of In:Ga:Zn=1:1:1. The film is formed by sputtering using a target. Electron diffraction is performed with a probe diameter of 1 nm.

[0372] As shown in FIG. 24D, a halo was observed in the diffraction pattern of the quartz glass substrate. It can be seen that the silica glass is in an amorphous state. In the diffraction pattern of the deposited IGZO film, a spot-like pattern, not a halo, was observed. For this reason, the IGZO film formed at room temperature is neither crystalline nor amorphous. , it is presumed that the state is intermediate and it cannot be concluded that the state is amorphous.

[0373] <<Structure of oxide semiconductor>> In addition, when focusing on the crystal structure, oxide semiconductors may be classified differently from that shown in FIG. 24A. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As examples of non-single-crystal oxide semiconductors, the above-mentioned CAAC-OS, Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-crystalline oxide semiconductors. Amorphous-like oxide semiconductor (a-like OS) semiconductor), amorphous oxide semiconductor, etc.

[0374] Here, for details of the above-mentioned CAAC-OS, nc-OS, and a-like OS, Provide an explanation.

[0375] [CAAC-OS] CAAC-OS has multiple crystalline regions, and the multiple crystalline regions have c-axes aligned in a specific direction. The specific direction is the thickness direction of the CAAC-OS film. The normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. A crystalline region is a region in which the atomic arrangement has periodicity. When considered as an arrangement, the crystalline region is also a region with a uniform lattice arrangement. S has a region in which multiple crystal regions are connected in the ab-plane direction, and the region has distortion. The distortion may occur in the lattice arrangement in the area where multiple crystal regions are connected. A place where the lattice orientation changes between a uniform area and a different uniform area. In other words, the CAAC-OS has a c-axis orientation and no clear orientation in the ab-plane direction. It is an oxide semiconductor that does not have a

[0376] Each of the multiple crystalline regions is made up of one or more minute crystals (maximum diameter 10n If the crystalline region is made up of a single tiny crystal, The maximum diameter of the crystalline region is less than 10 nm. In addition, the crystalline region is composed of many tiny crystals. In such a case, the size of the crystalline region may be approximately several tens of nm.

[0377] In-M-Zn oxide (where element M is aluminum, gallium, yttrium, or tin) In the case of the CAAC-OS, one or more selected from the group consisting of indium, titanium, etc. A layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) are A layer having a layer structure (hereinafter, a (M,Zn) layer) is laminated. ) In addition, indium and element M can be substituted for each other. Therefore, The (M,Zn) layer may contain indium. The In layer may contain the element M. The In layer may contain Zn. The layered structure may be, for example, High-resolution TEM (Transmission Electron Microscope) ) image, it is observed as a lattice image.

[0378] For example, when the structure of the CAAC-OS film is analyzed using an XRD device, the θ / 2θ shift In the out-of-plane XRD measurement using a slit, the peak indicating the c-axis orientation was = 31° or in the vicinity. Note that the position of the peak indicating the c-axis orientation (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0379] For example, in the electron diffraction pattern of the CAAC-OS film, multiple bright spots (spots) ) is observed. Note that one spot and another spot are the same as the incident electron beam that has passed through the sample. The spot (also called the direct spot) is the center of symmetry and the observations are made at positions that are point-symmetric. .

[0380] When the crystalline region is observed from the specific direction, the lattice arrangement in the crystalline region is a hexagonal lattice. The unit cell is not necessarily a regular hexagon, but may be a non-regular hexagon. The above distortion may have a lattice arrangement such as a pentagon or heptagon. In the OS, clear grain boundaries were confirmed even in the vicinity of the strain. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because the arrangement of oxygen atoms in the CAAC-OS is dense in the ab-plane direction. The lack of a metal atom and the change in bond distance between atoms due to the substitution of metal atoms, This is believed to be because distortion can be tolerated.

[0381] The crystal structure in which clear grain boundaries are observed is called polycrystal. The grain boundaries act as recombination centers, trapping carriers and forming on-states in transistors. It is highly likely that this will cause a decrease in the on-state current and a decrease in the field effect mobility. CAAC-OS, in which no grain boundaries are observed, has a crystal structure suitable for the semiconductor layer of a transistor. CAAC-OS is one of the crystalline oxides that have Zn. For example, In-Zn oxide and In-Ga-Zn oxide are preferably In oxide. This is preferable because it can suppress the generation of grain boundaries more effectively than the above-mentioned materials.

[0382] The CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. In addition, the crystallinity of an oxide semiconductor may be reduced due to the inclusion of impurities or the generation of defects. Therefore, CAAC-OS is similar to oxide semiconductors with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of the oxide semiconductor having the CAAC-OS are stable. Therefore, oxide semiconductors having CAAC-OS have high heat resistance and reliability. -OS is stable even under high temperatures (so-called thermal budget) during the manufacturing process Therefore, using CAAC-OS for OS transistors can expand the flexibility of the manufacturing process. This makes it possible.

[0383] [nc-OS] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). In other words, nc-OS has a periodic atomic arrangement in the region of microscopic The size of the minute crystals is, for example, 1 nm or more and 10 nm or less. In particular, since the size of these tiny crystals is between 1 nm and 3 nm, they are also called nanocrystals. In nc-OS, there is no regularity in the crystal orientation between different nanocrystals. No orientation is observed. Therefore, depending on the analysis method, nc-OS may be considered as a-like OS. For example, in the case of an nc-OS film, XR When structural analysis was performed using the D instrument, out-of-plane θ / 2θ scans were used. No peaks indicating crystallinity were detected in the XRD measurement. Electron diffraction (control) using an electron beam with a probe diameter larger than that of a silicon crystal (e.g., 50 nm or more). When electron diffraction (also called limited-field electron diffraction) is performed, a diffraction pattern resembling a halo pattern is observed. On the other hand, for the nc-OS film, the probes were close to or smaller than the nanocrystals. Electron beam diffraction using an electron beam with a diameter of 1 nm or more and 30 nm or less (nanobeam electron beam) When the light is diffracted, multiple light beams are emitted from the light source within a ring-shaped area centered on the direct spot. An electron diffraction pattern may be obtained in which the spots are observed.

[0384] [a-like OS] The a-like OS is an oxide semiconductor that has a structure between the nc-OS and the amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The OS has lower crystallinity than the nc-OS and CAAC-OS. The OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0385] <<Oxide semiconductor structure>> Next, the details of the above-mentioned CAC-OS will be described. Regarding.

[0386] [CAC-OS] CAC-OS is, for example, a metal oxide made up of elements with a size of 0.5 nm to 10 nm. Preferably, the material is unevenly distributed in a size range of 1 nm to 3 nm or less, or in the vicinity thereof. In the following, it is assumed that one or more metal elements are unevenly distributed in a metal oxide. The region having the metal element has a thickness of 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A state where the pixels are mixed at or near the size is called a mosaic or patch pattern.

[0387] Furthermore, CAC-OS is a mosaic material that is separated into a first region and a second region. The first region is in a cloud-like shape, and the first region is distributed throughout the film (hereinafter, also referred to as a cloud-like shape). In other words, the CAC-OS is a system in which the first region and the second region are mixed. It is a composite metal oxide having the following structure.

[0388] Here, the In ratio to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide is The atomic ratios of In, Ga, and Zn are expressed as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is In] is larger than [In] in the composition of the CAC-OS film. The region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region has a larger [In] than the second region. The first region has a smaller Ga than the first region. In the second region, [Ga] is larger than [Ga] in the first region, and [In] is , which is a region smaller than [In] in the first region.

[0389] Specifically, the first region is mainly composed of indium oxide, indium zinc oxide, etc. The second region is a region in which gallium oxide, gallium zinc oxide, etc. In other words, the first region is called the region in which In is the main component. The second region can be rephrased as a region containing Ga as the main component. This can be done.

[0390] In addition, there are cases where a clear boundary between the first region and the second region cannot be observed.

[0391] In addition, CAC-OS in In-Ga-Zn oxide is a compound that consists of In, Ga, Zn, and O. In the material composition containing Ga, there is a region mainly composed of Ga and a region mainly composed of In. The regions are arranged in a random pattern, with the regions being in a mosaic pattern. Therefore, it is speculated that CAC-OS has a structure in which metal elements are distributed non-uniformly. .

[0392] CAC-OS is formed by sputtering without intentionally heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the deposition gas and The gas to be used should be selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. In addition, the ratio of oxygen gas to the total flow rate of the deposition gas during deposition may be The lower the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during deposition, the more preferable. It is preferable to set the flow rate ratio to be 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0393] For example, in the CAC-OS of In-Ga-Zn oxide, the energy dispersive X Energy Dispersive X-ray spectroscopy (EDX) The EDX mapping obtained using scopy revealed that the In-based region (the first The structure is one in which the first region (the first region) and the second region (the second region) mainly composed of Ga are unevenly distributed and mixed. It can be confirmed that it has.

[0394] Here, the first region is a region having a higher conductivity than the second region. When carriers flow through this region, the metal oxide exhibits electrical conductivity. The first region is distributed in a cloud-like shape in the metal oxide, resulting in high field-effect mobility (μ ) can be achieved.

[0395] On the other hand, the second region is a region having a higher insulating property than the first region. The regions are distributed in the metal oxide, so that leakage current can be suppressed.

[0396] Therefore, when the CAC-OS is used in a transistor, the conductivity due to the first region and the conductivity due to the second region are different. The insulating properties of the second region act in a complementary manner to provide switching functionality. (On / Off function) can be given to CAC-OS. OS is a material that has a conductive function in part and an insulating function in other part. The whole has the function of a semiconductor. By separating the conductive function from the insulating function, Therefore, the CAC-OS can be used as a transistor. By using on ), high field effect mobility (μ), and good switching A switching operation can be realized.

[0397] In addition, transistors using CAC-OS have high reliability. It is ideal for various semiconductor devices including display devices.

[0398] Oxide semiconductors have a variety of structures, each of which has different characteristics. Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA Two or more of C-OS, nc-OS, and CAAC-OS may be included.

[0399] <Transistor Having Oxide Semiconductor> Next, the case where the oxide semiconductor is used for a transistor will be described.

[0400] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility can be realized. In addition, a highly reliable transistor can be realized.

[0401] It is preferable to use an oxide semiconductor having a low carrier concentration for the transistor. For example, The carrier concentration of oxide semiconductors is 1×10 17 cm -3 Less than or equal to 1×10 15 cm -3 Less than 1×10, more preferably 13 cm -3 Less than or equal to 1×10 11 c m -3 Less than 1×10, more preferably 10 cm -3 Less than 1 x 10 -9 cm -3 In addition, in order to reduce the carrier concentration of the oxide semiconductor film, The impurity concentration in the conductor film may be reduced to reduce the defect level density. A low impurity concentration and a low defect level density are called high purity intrinsic or substantially high purity intrinsic. Note that the oxide semiconductor having a low carrier concentration is a highly purified intrinsic or substantially highly purified intrinsic semiconductor. It may be called an oxide semiconductor.

[0402] In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states. Therefore, the trap level density may be low.

[0403] In addition, it takes a long time for the charges trapped in the trap states of the oxide semiconductor to disappear. Therefore, the trap level density is high. A transistor in which a channel formation region is formed in an oxide semiconductor has unstable electrical characteristics. There are cases.

[0404] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is In order to reduce the impurity concentration in the oxide semiconductor, It is also preferable to reduce the impurity concentration in the adjacent film. These include potassium metal, alkaline earth metals, iron, nickel, silicon, etc.

[0405] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0406] When an oxide semiconductor contains silicon or carbon, which is one of the group 14 elements, it becomes an oxide. Defect levels are formed in the semiconductor. This causes the silicon and carbon in the oxide semiconductor to The concentration of silicon and carbon near the interface with the oxide semiconductor (Secondary Ion Mass Spectroscopy ( By SIMS (Secondary Ion Mass Spectrometry) The resulting concentration is 2 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 at oms / cm 3 The following applies.

[0407] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels are formed. Therefore, alkali metals or alkaline earth metals may form carriers. A transistor using an oxide semiconductor containing such a metal oxide tends to be normally on. Therefore, the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS The concentration of is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0408] In addition, when nitrogen is contained in an oxide semiconductor, electrons that act as carriers are generated, and the carriers The concentration increases and it becomes easier to make the oxide semiconductor n-type. The transistor using the oxide semiconductor is likely to be normally on. However, when nitrogen is contained, trap states may be formed. The electrical characteristics may become unstable. The nitrogen concentration is 5×10 19 atoms / cm 3 Less than 5 x 10 18 atom s / cm 3 Less than or equal to 1×10 18 atoms / cm 3 The following is more preferable: is 5 x 10 17 atoms / cm 3 To the following:

[0409] In addition, hydrogen contained in the oxide semiconductor reacts with oxygen that bonds with metal atoms to form water. When hydrogen enters the oxygen vacancy, the electron carrier In addition, some of the hydrogen may combine with the oxygen that is bonded to the metal atom to form a carbide. Therefore, it is necessary to use an oxide semiconductor that contains hydrogen. Therefore, hydrogen in the oxide semiconductor It is preferable that the SIM is reduced as much as possible. The hydrogen concentration obtained by S is 1×10 20 atoms / cm 3 Less than 1x1 0 19 atoms / cm 3 less than 5×10 18 atoms / cm 3 less than, More preferably, 1×10 18 atoms / cm 3 Make it less than.

[0410] To use an oxide semiconductor in which impurities are sufficiently reduced for a channel formation region of a transistor Thus, stable electrical characteristics can be imparted.

[0411] This embodiment mode can be combined with other embodiment modes as appropriate.

[0412] (Embodiment 6) In this embodiment, electronic devices according to one embodiment of the present invention will be described with reference to FIGS. do.

[0413] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be used as the display portion. The device has a light detection function, so it can be used to perform biometric authentication on the display, or to detect contact or proximity. This makes it possible to improve the functionality and convenience of electronic devices. Cut.

[0414] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Social computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples of such devices include audio playback devices, etc.

[0415] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) It may be possible.

[0416] The electronic device of the present embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and running various software (programs) function, wireless communication function, and function for reading out programs or data recorded on a recording medium etc.

[0417] The electronic device 6500 shown in FIG. 25A is a portable information device that can be used as a smartphone. It is a terminal device.

[0418] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0419] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0420] FIG. 25B is a schematic cross-sectional view including the end portion of the housing 6501 on the microphone 6506 side.

[0421] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. In the space surrounded by the protective member 6510, a display panel 6511, an optical member 6512, a touch panel 6513, and a touch panel 6514 are arranged. A sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged. .

[0422] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The screw 6513 is fixed in place by an adhesive layer (not shown).

[0423] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The folded part is connected to the FPC6515. C6516 is mounted on the FPC6515. is connected to a child.

[0424] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, it is possible to realize an extremely lightweight electronic device. Because it is thin, it is possible to mount a large-capacity battery 6518 while keeping the thickness of the electronic device small. Also, a part of the display panel 6511 can be folded back and the FPC 6515 and the back side of the pixel area can be attached. By arranging the connection parts, it is possible to realize an electronic device with a narrow frame.

[0425] By using the display device of one embodiment of the present invention for the display panel 6511, For example, a fingerprint can be captured on the display panel 6511 for fingerprint authentication. This can be done.

[0426] The display unit 6502 further includes a touch sensor panel 6513. 2 can be given a touch panel function. The touch sensor panel 6513 can be Capacitive, resistive, surface acoustic wave, infrared, optical, pressure sensitive, etc. Alternatively, the display panel 6511 can function as a touch sensor. In that case, the touch sensor panel 6513 does not need to be provided.

[0427] An example of a television device is shown in FIG. 26A. The television device 7100 has a housing 7101. The display unit 7000 is built into the housing 7101. This shows a configuration in which the above is supported.

[0428] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0429] The television device 7100 shown in FIG. 26A is operated by an operation switch provided on the housing 7101. Or, it can be done by a separate remote control operation device 7111. The television may be provided with a touch sensor, and the television set may be operated by touching the display unit 7000 with a finger or the like. The remote control device 7111 may operate the device 7100. The remote control unit 7111 may have a display unit that displays information output from the The channel and volume can be controlled by the touch panel or the operation keys. The image displayed on the display unit 7000 can be manipulated.

[0430] The television device 7100 includes a receiver and a modem. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be one-way (sender to receiver) or two-way It is also possible to communicate information in both directions (between sender and receiver, or between receivers). do.

[0431] FIG. 26B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 721, and a 3, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. is.

[0432] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0433] 26C and 26D show an example of digital signage.

[0434] The digital signage 7300 shown in FIG. 26C includes a housing 7301, a display unit 7000, and a screen. It also has an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a power switch, connection terminals, various sensors, a microphone, etc.

[0435] FIG. 26D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of a pillar 7401. do.

[0436] 26C and 26D, the display device of one embodiment of the present invention is applied to the display portion 7000. It is possible.

[0437] The larger the display unit 7000, the more information can be displayed at one time. The wider the area, the more visible it is, and the more effective your advertising will be. Cut.

[0438] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows the route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0439] Also, as shown in FIG. 26C and FIG. 26D, a digital signage 7300 or a digital sign The Ineji 7400 is an information terminal device such as a smartphone 7311 or It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on 000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. In this way, the display on the display unit 7000 can be switched.

[0440] In addition, the digital signage 7300 or the digital signage 7400 is provided with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It is possible to do so.

[0441] The electronic device shown in FIG. 27A to FIG. 27F includes a housing 9000, a display unit 9001, and a speaker 900. 3, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006 ,Sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetic Air, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity , including the ability to measure gradient, vibration, odor or infrared rays), microphone 900 8, etc.

[0442] The electronic devices shown in FIGS. 27A to 27F have various functions. Functions for displaying images, videos, text images, etc. on the display, touch panel function, calendar , function to display date or time, etc., processed by various software (programs) functions to control the computer, wireless communication functions, and reading programs or data recorded on a recording medium The functions of electronic devices are not limited to these. The electronic device may have a plurality of display units. In addition, cameras and other devices can be installed in electronic devices to take still and moving images and store them on a recording medium (external or The camera may have a function to store the captured image in a digital camera (built into the camera), a function to display the captured image on the display unit, etc. stomach.

[0443] The electronic devices shown in FIGS. 27A to 27F will be described in detail below.

[0444] FIG. 27A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is, for example, For example, the portable information terminal 9101 can be used as a smartphone. 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. 101 can display text and image information on its multiple sides. In FIG. 27A, three 9 shows an example of displaying an icon 9050. Also, information 9051 shown in a dashed rectangle is displayed. The information 9051 may be displayed on another surface of the display unit 9001. Notifications of incoming e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates and times, The information includes the time, battery level, antenna reception strength, etc. Or, information 9051 is displayed. An icon 9050 or the like may be displayed at the position where the icon is displayed.

[0445] 27B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a display The information display function is provided on three or more sides of the display unit 9001. 053, information 9054 is displayed on different sides. For example, the user When the mobile information terminal 9102 is stored in the breast pocket of the clothes, Users can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his / her pocket, and can, for example, receive a call. It is possible to determine whether or not

[0446] FIG. 27C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 communicates with a headset capable of wireless communication, for example. In addition, the portable information terminal 9200 has a connection terminal 90 06 also enables data transmission between other information terminals and charging. The charging operation may be performed by wireless power supply.

[0447] 27D to 27F are perspective views showing a foldable portable information terminal 9201. 27D shows the portable information terminal 9201 in an unfolded state, FIG. 27F shows the portable information terminal 9201 in a folded state, and FIG. 27E is a perspective view of a state in the middle of changing from one of FIG. 27D and FIG. 27F to the other. The terminal 9201 is highly portable when folded and seamlessly wide when unfolded. The display area provides excellent visibility of the display. , and is supported by three housings 9000 connected by hinges 9055. The display portion 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0448] This embodiment mode can be combined with other embodiment modes as appropriate. EXAMPLES

[0449] In this example, a light-emitting and receiving device that can be used for a display device of one embodiment of the present invention was manufactured. The evaluation results will now be described.

[0450] In this example, two light receiving and emitting devices (Device 1 and Device 2) were fabricated. The light-receiving device fabricated in this example has a common structure with the light-emitting device (organic EL device). This is the configuration.

[0451] The chemical formulas of the materials used in this example are shown below.

[0452] [ka]

[0453] The specific configuration of the light emitting and receiving device of this embodiment is shown in Table 1. The stacked structure is shown in Figure 1. Device 1 places the hole transport layer of a light-emitting device on the active layer of a light-receiving device. The layered structure of device 2 is shown in FIG. Device 2 can be fabricated by adding an active layer for a light-receiving device to the light-emitting device. It has a layered structure that can be used for

[0454] [Table 1]

[0455] The first electrode 180 is an alloy of silver (Ag), palladium (Pd) and copper (Cu) (Ag-Pd -Cu(APC)) was formed into a film with a thickness of 100 nm by sputtering, and then the Indium tin oxide containing silicon dioxide (ITSO) was deposited by sputtering to a thickness of 100 nm. The film was formed so that the thickness of the film was m.

[0456] The hole injection layer 181 is 3-[4-(9-phenanthryl)-phenyl]-9-phenyl- 9H-carbazole (abbreviation: PCPPn) and molybdenum oxide were mixed in a weight ratio of PCPPn The hole injection layer 181 was formed by co-evaporation in a ratio of 0.1:0.01 to 0.01:0.01. The film thickness was set to 15 nm.

[0457] The active layer 183 is made of fullerene (C 70 ) and tetraphenyldibenzoperiflanthene (abbreviation :DBP) in a weight ratio of C 70 :DBP=9:1 The active layer 183 was formed to have a thickness of 50 nm.

[0458] The hole transport layer 182 was not provided in the device 1, but was provided in the device 2. is N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazolyl) 9,9-dimethyl-9H-fluoren-2-amine( A PCBBiF film was used for deposition so that the film thickness was 15 nm.

[0459] The light-emitting layer 193 is made of 2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl ]Dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), PCBBi F, and bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5- phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-hepta dndionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-P) 2(dibm)]) with a weight ratio of 0.8:0.2:0.06 (=2mDBTBPDB q-II: PCBBiF: [Ir(dmdppr-P)2(dibm)]), film thickness is 70 The film was formed by co-evaporation so that the thickness was 1 nm.

[0460] The electron transport layer 184 is made of 2mDBTBPDBq-II with a thickness of 10 nm and 2,9-bis(naphthalene) phthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NB The film was then deposited by evaporation to a thickness of 10 nm.

[0461] The electron injection layer 185 is formed by vapor deposition of lithium fluoride (LiF) to a thickness of 1 nm. And it was formed.

[0462] The second electrode 189 is a film of silver (Ag) and magnesium (Mg) with a volume ratio of 10:1. After forming the layer by co-evaporation to a thickness of 10 nm, indium tin oxide (ITO) was sputtered. It was formed by a quartz deposition method so as to have a thickness of 40 nm.

[0463] In this manner, the light emitting and receiving device of this example was fabricated.

[0464] [Light-emitting device properties] First, we evaluated the characteristics of the light-emitting device as a receiving / emitting device (characteristics when a forward bias is applied). FIG. 28 shows the luminance-voltage characteristics of the light-receiving and light-emitting device. FIG. 29 shows the external The graph shows the partial quantum efficiency-luminance characteristics.

[0465] Both Device 1 and Device 2 were confirmed to function normally as light-emitting devices. In particular, the device 2 having the hole transport layer 182 between the active layer 183 and the light-emitting layer 193R has the following characteristics: High external quantum efficiency was obtained.

[0466] [Characteristics as a light receiving device] Next, we evaluated the characteristics of the light-receiving device (characteristics when reverse bias is applied) Figure 30 shows the wavelength dependence of the light receiving sensitivity of the light emitting device. and the light intensity was 12.5 μW / cm 2 The voltage applied here was In general, the value is obtained when the bias applied to the EL device is positive. It is positive when the 80 side is at a high potential and the second electrode 189 side is at a low potential.

[0467] Both Device 1 and Device 2 were confirmed to function normally as light receiving devices. .

[0468] As described above, in this embodiment, the structure is common to the light-emitting device (organic EL device). The light-receiving and light-emitting device having the above structure was fabricated, and the device exhibited excellent characteristics as both a light-emitting device and a light-receiving device. I was able to get sexuality. EXAMPLES

[0469] In this example, a light-emitting and receiving device that can be used for a display device of one embodiment of the present invention was manufactured. The evaluation results will now be described.

[0470] The light-receiving device fabricated in this example has a structure in common with the light-emitting device (organic EL device). This is a configuration that aims to streamline the process.

[0471] The light emitting and receiving device fabricated in this example has the same structure as the active layer 183 except that it has a thickness of about 60 nm. , and has the same configuration as Device 2 prepared in Example 1 (see Table 1).

[0472] [Characteristics as a light receiving device] The characteristics of the light receiving and emitting device fabricated in this example as a light receiving device (when a reverse bias is applied) The light receiving and emitting device of this embodiment was used to evaluate the wavelengths from 375 nm to 750 nm. Light is applied every 25 nm, 12.5 μW / cm 2 The wavelength dependence of the external quantum efficiency was calculated. The voltage was set to -6V. The measurement temperatures were 20°C, 30°C, 40°C, 50°C, and 60°C. The temperature dependence of the external quantum efficiency was calculated under seven conditions: 70℃, 70℃, and 79℃. Figure 32 shows the wavelength dependence of the light receiving sensitivity of an optical device. 31 and 32 show the external quantum efficiency (EQE).

[0473] From the results of this example, in the light emitting / receiving device of this example, the external resistance gradually increases as the temperature increases. It was confirmed that the internal quantum efficiency of the light emitting and receiving device of this embodiment increased from 20° C. to 79° C. No drastic change in efficiency was observed between 100 and 200 °C, and the device functions normally as a light-receiving device. was confirmed.

[0474] As described above, in this embodiment, the structure is common to the light-emitting device (organic EL device). We fabricated a light-receiving device with this configuration and confirmed that it can be used as a light-receiving device over a wide temperature range. I was able to confirm this. EXAMPLES

[0475] In this example, a light-emitting and receiving device that can be used for a display device of one embodiment of the present invention was manufactured. The evaluation results will now be described.

[0476] The light-receiving device fabricated in this example has a structure in common with the light-emitting device (organic EL device). This is a configuration that aims to streamline the process.

[0477] <3-1. Effect of active layer thickness> First, to confirm the effect of the thickness of the active layer of the light-receiving device, five devices shown in Table 2 were (Devices 3-a, 3-b, 3-c, 3-d, and 3-e) were fabricated and used as light-emitting devices. Both the characteristics and the characteristics as a light receiving device were evaluated.

[0478] [Table 2]

[0479] The five light emitting / receiving devices are configured by the thickness (X) of the active layer 183 and the thickness (Y) of the hole transport layer 182. The active layer 18 was fabricated by changing the values ​​of X and Y under the condition that the sum of the active layer thicknesses was 75 nm. Device 2 produced in Example 1 (see Table 1) except for the thickness of layer 3 and the thickness of hole transport layer 182. The device 3-e does not have an active layer 183. It can be said to be a color light-emitting device.

[0480] [Light-emitting device properties] First, we evaluated the characteristics of the light-emitting device as a receiving / emitting device (characteristics when a forward bias is applied). Figure 33 shows the external quantum efficiency vs. luminance characteristics of the light-receiving and light-emitting device. The current density-voltage characteristics of the device are shown.

[0481] As shown in FIG. 33, the thinner the thickness (X) of the active layer 183, the higher the external quantum efficiency. In addition, as shown in Figure 34, the current density-voltage characteristics of the five devices showed There was almost no difference, and it was found that the effect of the thickness (X) of the active layer 183 was extremely small. Therefore, there is a large difference in carrier (hole) transport properties between the active layer 183 and the hole transport layer 182. It was suggested that it was not.

[0482] From the above, it can be seen that the active layer 183 in the light emitting / receiving device of this embodiment has a function that affects the light emission efficiency. However, it was found that this does not significantly affect the hole transport properties when a forward bias is applied.

[0483] [Characteristics as a light receiving device] Next, we evaluated the characteristics of the light-receiving device (characteristics when reverse bias is applied) Figure 35 shows the external quantum efficiency vs. wavelength characteristics of the light-receiving and light-emitting device. The current density-voltage characteristics of the device are shown.

[0484] The measurement conditions were: light intensity of 12.5 μW / cm 2 The voltage in FIG. 35 was −6V. The voltage applied here is the voltage when the bias applied to the EL device is normally positive. That is, when the first electrode 180 side is at a high potential and the second electrode 189 side is at a low potential, The combination is positive.

[0485] As shown in FIG. 35, the thinner the thickness (X) of the active layer 183, the lower the external quantum efficiency. In addition, as shown in FIG. 36, the thinner the thickness (X) of the active layer 183, the greater the photoelectric conversion efficiency. In addition, the current flow was reduced by the buffer layer between the active layer and the light-emitting layer. It was found that the thicker the thickness (Y) of the hole transport layer 182, the higher the driving voltage.

[0486] <3-2. Effect of buffer layer thickness> Next, to investigate the effect of the thickness of the buffer layer on the light-emitting / receiving device, the five devices shown in Table 3 were Devices 3-f, 3-g, 3-h, 3-i, and 3-j were fabricated and used as light-emitting devices. We evaluated both its properties as a photodiode and as a light-receiving device.

[0487] [Table 3]

[0488] The light-receiving and light-emitting devices prepared in Example 1, Example 2, and 3-1 of this Example (see Tables 1 and 2) ) were configured to receive light from the second electrode 189 side, The light receiving and emitting device fabricated in accordance with 2 (Table 3) is configured to receive light from the first electrode 180 side. do.

[0489] The light emitting / receiving device fabricated in 3-2 of this embodiment has a first electrode 180 having an indium tin oxide (ITO) layer with a thickness of about 70 nm. The second electrode 189 is an indium tin oxide (ITO) film having a thickness of about 150 nm. The thickness (Z) of the hole transport layer 182 was changed. Other than that, the configuration is the same as that of Device 2 produced in Example 1 (see Table 1).

[0490] [Light-emitting device properties] First, we evaluated the characteristics of the light-emitting device as a receiving / emitting device (characteristics when a forward bias is applied). Figure 37 shows the external quantum efficiency vs. luminance characteristics of the light-receiving and light-emitting device. The current density-voltage characteristics of the device are shown.

[0491] As shown in FIG. 37, the thicker the thickness (Z) of the hole transport layer 182, the higher the external quantum efficiency. In addition, as shown in Figure 38, the current density-voltage characteristics of the five devices were It was found that there was almost no difference in the properties, and the effect of the thickness (Z) of the hole transport layer 182 was extremely small. I did.

[0492] From the above, the hole transport layer functions as a buffer layer between the active layer 183 and the light emitting layer 193. The thicker the thickness (Z) of the layer 182, the faster the energy transfer from the light-emitting layer 193 to the active layer 183. suppressed, and the luminous efficiency increased.

[0493] [Characteristics as a light receiving device] Next, we evaluated the characteristics of the light-receiving device (characteristics when reverse bias is applied) Figure 39 shows the external quantum efficiency vs. wavelength characteristics of the light-receiving and light-emitting device. The current density-voltage characteristics of the device are shown.

[0494] The measurement conditions were: light intensity of 12.5 μW / cm 2 The voltage in FIG. 39 was −6V.

[0495] 35 and 39, both the thickness of the active layer 183 and the thickness of the hole transport layer 182 are When the thickness of the hole transport layer 182 is changed, the external quantum efficiency As shown in FIG. 40, the thicker the hole transport layer 182, the smaller the change in On the other hand, by comparing Figures 36 and 40, No reduction in current density was observed by varying the thickness of the hole transport layer 182.

[0496] For these reasons, a buffer layer (a hole transport layer in this embodiment) is provided between the active layer and the light emitting layer. The thicker the buffer layer, the greater the increase in the driving voltage. It turned out to be big.

[0497] From the above two evaluations, 3-1 and 3-2, it was found that the active layer 183 is a factor suppressing the transfer of charges (holes). In addition, the buffer layer (the hole transport layer 182 in this embodiment) ) suppresses Förster migration from the light-emitting layer 193 to the active layer 183, and the light emission It is considered that the decrease in efficiency is suppressed. When the device is operated as an optical device, it is believed that efficient charge transfer, recombination, and light emission occur. can be.

[0498] Here, the overlap between the absorption spectrum of the active layer and the emission spectrum of the light-emitting layer is reduced, and the light-emitting layer By suppressing the phenomenon in which the light emitted by the active layer is absorbed by the active layer, it is possible to further increase the light emission efficiency. When trying to improve the characteristics of a light-emitting device by reducing the thickness of the active layer, On the other hand, the material of the active layer is If the material is changed, the trade-off relationship can be avoided while maintaining the characteristics of the light-emitting device. It is believed that this will improve both the optical properties and the characteristics as a light-receiving device. [Explanation of symbols]

[0499] ANODE: wiring, BM: light shielding layer, CATHODE / VPD: wiring, Cf: capacitance, Csb :Capacity, Csg:Capacity, Csr:Capacity, FD:Node, GL:Wiring, GL1:Wiring, GL 2: Wiring, GR: Node, L1: Shortest distance, L2: Shortest distance, M1B: Transistor, M 1G: transistor, M1R: transistor, M2B: transistor, M2G: transistor sta, M2R: transistor, M3B: transistor, M3G: transistor, M3R: Transistor, M11: transistor, M12: transistor, M13: transistor, M14: transistor, RS: wiring, RS1: wiring, RS2: wiring, SA: node, SE :Wiring, SE1:Wiring, SE2:Wiring, SLB:Wiring, SLG:Wiring, SLR:Wiring, T X: Wiring, V0: Wiring, VCP: Wiring, VPI: Wiring, VRS: Wiring, WX: Wiring, WX 1: Wiring, WX2: Wiring, 10A: Display device, 10B: Display device, 10C: Display device, 1 0D: Display device, 10E: Display device, 10F: Display device, 10G: Display device, 21B: Light , 21G: light, 21R: light, 22: light, 23: light, 23a: stray light, 23b: stray light, 23c : stray light, 23d: stray light, 24: reflected light, 42: transistor, 47B: light emitting device, 4 7G: light emitting device, 47R: light receiving / emitting device, 50A: display device, 50B: display device, 51: substrate, 52: finger, 53: layer having light emitting / receiving device, 55: layer having transistor layer, 57: layer having light emitting device, 59: substrate, 100A: display device, 100B: display Device, 100C: Display device, 112: Common layer, 114: Common layer, 115: Common electrode, 14 2: Adhesive layer, 143: Space, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate , 155: Adhesive layer, 159: Resin layer, 159p: Opening, 162: Display section, 164: Circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180: first electrode, 181: hole injection layer, 182: hole transport layer, 182B: hole transport layer, 182G: hole transport layer, 182R: hole transport layer, 183: active layer, 184: electron transport layer, 185: electron injection layer 186: a layer serving as both a light-emitting layer and an active layer; 189: a second electrode; 190: a light-emitting device; 90B: light emitting device, 190G: light emitting device, 190R (PD): light receiving and emitting device, 191: pixel electrode, 192: buffer layer, 192B: buffer layer, 192G: buffer layer , 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer, 19 3R: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer, 1 94R: buffer layer, 195: protective layer, 201: transistor, 202: transistor, 204: connection portion, 205: transistor, 206: transistor, 207: transistor , 208: transistor, 209: transistor, 210: transistor, 211: insulator layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 216: partition wall 217: partition wall, 218: insulating layer, 219: light shielding layer, 221: conductive layer, 222a: conductive layer , 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 231i: channel forming region, 231n: low resistance region, 242: connection layer, 300: pixel 310: unit, 310a: unit, 310b: unit, 320: target pixel, 320a: target pixel, 320b: target pixel, 330a: pixel, 330b: pixel, 330c : pixel, 330d: pixel, 340: finger, 6000: electronic device, 6001: display unit, 600 3: finger, 6500: electronic device, 6501: housing, 6502: display, 6503: power button , 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6 508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 65 13: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board board, 6518: battery, 7000: display unit, 7100: television device, 7101: Case, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer Computer, 7211: Case, 7212: Keyboard, 7213: Pointing device Chair, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7 303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone , 9050:Icon, 9051:Information, 9052:Information, 9053:Information, 9054 : Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 920 0: Portable information terminal, 9201: Portable information terminal< / n> < / n> < / n> < / m> < / n> < / n> < / n> < / n> < / n> < / n> < / m> < / n> < / n> < / n> < / n> < / m> < / n> < / n> < / n> < / n> < / n> < / n> < / n> < / n> < / n>

Claims

[Claim 1] A light emitting device and a light receiving and emitting device are included, the light emitting device includes a first pixel electrode, a first light emitting layer, and a common electrode; the light emitting and receiving device includes a second pixel electrode, a second light emitting layer, an active layer, and the common electrode; The active layer comprises an organic compound, the first light-emitting layer is located between the first pixel electrode and the common electrode; the second light-emitting layer and the active layer are each located between the second pixel electrode and the common electrode; the light emitting device is operable to emit light of a first color; A display device, wherein the light receiving and emitting device has a function of emitting light of a second color and a function of receiving light of the first color.

Images