Method for manufacturing semiconductor device and semiconductor device

Abstract

To provide a semiconductor device with improved quality.SOLUTION: A method for manufacturing a semiconductor device of the embodiment has a first attaching process, a grinding process, an individualizing process, and a support substrate detaching process. The first attaching process is a process of attaching the device surface on which the circuit pattern is formed of the base material made of semiconductor material to the support substrate. The grinding process is a process of grinding the opposite side of the device surface while it is supported by the support substrate. The individualizing process is a process of cutting the substrate into pieces while it is supported by the support substrate. The support substrate detaching process is a process of releasing the support substrate from the base material.SELECTED DRAWING: Figure 12

Description

[Technical field]

[0001] An embodiment of the present invention relates to a semiconductor device and a method for manufacturing the same. [Background technology]

[0002] Semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are used for applications such as power conversion. Such semiconductor devices are manufactured by forming a circuit pattern on a substrate and then singulating the substrate into individual chips. If the substrate is not stably supported during the singulation process, there is a risk that damage will remain in the semiconductor device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-096265 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor device with improved quality. [Means for solving the problem]

[0005] The manufacturing method of the semiconductor device according to the embodiment includes a first attachment step, a grinding step, a singulation step, and a support substrate detachment step. The first attachment step is a step of attaching a device surface of a substrate made of a semiconductor material, on which a circuit pattern is formed, to a support substrate. The grinding step is a step of grinding a surface opposite to the device surface while the substrate is supported by the support substrate. The singulation step is a step of cutting the substrate while the substrate is supported by the support substrate to individualize the substrate. The support substrate detachment step is a step of detaching the support substrate from the substrate.

[0006] A semiconductor device according to an embodiment has a semiconductor chip. The semiconductor chip is made of a semiconductor material. The semiconductor chip is plate-shaped. The semiconductor chip has a device surface, a back surface, and four side surfaces. A circuit pattern is formed on the device surface. The back surface is located opposite the device surface. The four side surfaces connect the device surface and the back surface. Of the four side surfaces, at least one pair of side surfaces facing opposite directions are inclined in directions approaching each other as they move from the device surface side to the back surface side. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic diagram showing a semiconductor device according to an embodiment; [Diagram 2] 3 is a flowchart showing a method for manufacturing a semiconductor device according to an embodiment. [Diagram 3] 5A to 5C are schematic diagrams illustrating a device surface forming step according to the embodiment. [Figure 4] 5A to 5C are schematic diagrams showing a mark forming step according to the embodiment. [Diagram 5] 5A to 5C are schematic diagrams illustrating a device surface in a mark forming step according to an embodiment. [Figure 6] FIG. 4 is a schematic diagram showing a first attachment step in the embodiment. [Figure 7] Schematic diagram showing a grinding process of the embodiment. [Figure 8] Schematic diagram showing a film forming process according to an embodiment. [Figure 9] FIG. 4 is an example of an enlarged view of a film portion near a groove portion according to an embodiment. [Figure 10] FIG. 4 is an example of an enlarged view of a film portion near a groove portion according to an embodiment. [Figure 11] FIG. 4 is an example of an enlarged view of a film portion near a groove portion according to an embodiment. [Figure 12] Schematic diagram showing a singulation process of the embodiment. FIG. [Figure 13] 5A to 5C are schematic diagrams illustrating an outer surface etching step according to the embodiment. [Figure 14] FIG. 4 is a schematic diagram showing a second attachment step in the embodiment. [Figure 15] 5A to 5C are schematic diagrams illustrating a supporting substrate removing step according to the embodiment. [Figure 16]5A to 5C are schematic diagrams illustrating a pick-up process according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, a semiconductor device and a manufacturing method thereof according to an embodiment will be described with reference to the drawings.

[0009] In this specification, in order to indicate the positional relationship of parts, etc., the upward direction of the drawing is described as "upper" and the downward direction of the drawing is described as "lower." In this specification, the concepts of "upper" and "lower" are not necessarily terms that indicate a relationship with the direction of gravity.

[0010] 1 is a schematic diagram of a semiconductor device 1 according to the present embodiment. The semiconductor device 1 according to the present embodiment is, for example, a MOSFET or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 1 according to the present embodiment includes a rectangular plate-shaped semiconductor chip 10T and an electrode 20T provided on one surface of the semiconductor chip 10T.

[0011] The semiconductor chip 10T is made of a semiconductor material, which in this specification is, for example, silicon (Si), silicon carbide (SiC), GaAs (gallium arsenide), GaN (gallium nitride), etc., but is not limited thereto.

[0012] The semiconductor chip 10T has a device surface 10a, a back surface 10b located opposite to the device surface 10a, and four side surfaces 10c connecting the device surface 10a and the back surface 10b. The area of ​​each side surface 10c is sufficiently smaller than the areas of the device surface 10a and the back surface 10b. A circuit pattern is formed on the device surface 10a. For example, a MOSFET device or an IGBT device is formed on the device surface 10a. In the following description, the distance between the device surface 10a and the back surface 10b is referred to as the thickness H of the semiconductor chip 10T.

[0013] The electrode 20T is provided on the back surface 10b of the semiconductor chip 10T. The electrode 20T contacts the back surface 10b of the semiconductor chip 10T. For example, when the semiconductor chip 10T is a MOSFET chip, the electrode 20T is a drain electrode of the MOSFET. The electrode 20T includes an electrically conductive material. Here, the electrically conductive material is, for example, Cu (copper), Al (aluminum), Ni (nickel), Ag (silver), Au (gold), or the like, but is not limited thereto.

[0014] In the semiconductor chip 10T of this embodiment, the area of ​​the device surface 10a is larger than the area of ​​the back surface 10b. All the side surfaces 10c of the semiconductor chip 10T are inclined with respect to the normal line of the device surface 10a. All the side surfaces 10c are inclined in a direction approaching the side surface 10c located opposite to the side surface 10c from the device surface 10a side toward the back surface 10b side. It is sufficient that at least one pair of side surfaces 10c facing opposite to each other among the four side surfaces 10c are inclined in a direction approaching each other from the device surface 10a side toward the back surface 10b side.

[0015] 2 is a flowchart showing a method for manufacturing the semiconductor device 1 of this embodiment. The method for manufacturing the semiconductor device 1 of this embodiment includes a device surface forming step S10, a mark forming step S20, a first bonding step S30, a grinding step S40, a film forming step S50, a singulation step S60, an outer side surface etching step S70, a second bonding step S80, a support substrate removing step S90, and a pick-up step S100.

[0016] 3 is a schematic diagram showing the device surface forming step S10 of this embodiment. The device surface forming step S10 is a step of forming a circuit pattern of, for example, a MOSFET device or an IGBT device on one surface of a disk-shaped substrate 10 (semiconductor wafer) made of a semiconductor material, and forming this surface as the device surface 10a. In the following description, the surface opposite to the device surface 10a before the grinding step S40 described later is referred to as the initial back surface 10f. Although not shown in the figure, the device surface forming step S10 and the subsequent mark forming step S20 are performed in a state where the substrate 10 is supported by the initial back surface 10f.

[0017] FIG. 4 is a schematic diagram showing the mark forming step S20 of this embodiment. The mark forming step S20 of this embodiment is a step of processing the device surface 10a of the base material 10 to form grooves 11 (marks) with a depth D on the device surface 10a. The grooves 11 function as marks in the subsequent singulation step S60. The depth D of the grooves 11 is greater than the thickness H (see FIG. 1) of the semiconductor chip 10T manufactured by the manufacturing method of this embodiment. Note that the marks formed in the mark forming step S20 are not limited to a groove shape as long as they are recesses cut in the depth direction from the device surface 10a. For example, the mark forming step S20 may be a step of forming a plurality of holes with a depth D instead of the grooves 11.

[0018] In the mark forming step S20 of this embodiment, the grooves 11 are formed by a dicing device M used in the singulation process (see the subsequent singulation step S60). The grooves 11 are formed by a rotating disk-shaped blade 9 provided on the dicing device M. Alternatively, a laser may be used to form the grooves 11.

[0019] FIG. 5 is a schematic diagram showing the device surface 10a after the mark forming step S20. In FIG. 5, the groove portion 11 is illustrated by a thick line. As shown in FIG. 5, a plurality of alignment lines L11, L12 are formed in advance on the device surface 10a. The alignment lines L11, L12 are used as reference positions for forming a circuit pattern in the device surface forming step S10. The alignment lines L11, L12 include a plurality of first alignment lines L11 and a plurality of second alignment lines L12. The first alignment lines L11 and the second alignment lines L12 extend in directions perpendicular to each other. The alignment lines L11, L12 divide the device surface 10a into a plurality of vertical and horizontal sections.

[0020] The sections arranged between the alignment lines L11, L12 are classified into a rectangular effective section S1 used as the semiconductor device 1 and a removal section S2 arranged along the outer edge of the device surface 10a. A circuit pattern of one semiconductor device 1 is formed in each effective section S1. On the other hand, no circuit pattern is formed in the removal section S2. The removal section S2 is arranged to surround the central region where the effective sections S1 are concentrated. The groove portion 11 of this embodiment is formed on the alignment lines L11, L12 that separate the adjacent removal sections S2.

[0021] 6 is a schematic diagram showing the first attachment step S30 of this embodiment. In the process of transitioning from the mark formation step S20 to the first attachment step S30, the base material 10 is turned upside down. The first attachment step S30 is a step of attaching the device surface 10a facing downward to the support substrate 40 using an adhesive 30. Through the first attachment step S30, the base material 10 is fixed to the support substrate 40.

[0022] In the first attachment step S30, first, the device surface 10a is coated with an uncured adhesive 30. Next, the device surface 10a is placed opposite the support surface of the support substrate 40 and attached to it. Next, the adhesive 30 is cured. As the adhesive 30, for example, an acrylic adhesive, an epoxy adhesive, or a silicon adhesive can be preferably used. The support substrate 40 is a plate-shaped member made of, for example, glass or silicon (Si).

[0023] 6 illustrates a case where the adhesive 30 is completely filled inside the groove 11, but the state of filling with the adhesive 30 is not limited to the state shown in Fig. 6. That is, the adhesive 30 may be filled partway into the groove 11, with a gap being provided near the bottom of the groove 11. Also, the adhesive 30 may not be filled into the groove 11.

[0024] FIG. 7 is a schematic diagram showing the grinding step S40 of this embodiment. The grinding step S40 is a step of grinding the initial back surface 10f to form the back surface 10b (ground surface). The grinding step S40 of this embodiment is performed in a state in which the substrate 10 is supported by the support substrate 40. The grinding step S40 makes the substrate 10 have a thickness H. As a result, the grooves 11 formed from the device surface 10a side are connected to the back surface 10b side, and the grooves 11 penetrate the substrate 10. As described above, the adhesive 30 is filled inside the grooves 11 of this embodiment. Therefore, the grooves 11 penetrate the substrate 10, and the adhesive 30 is exposed from the back surface 10b.

[0025] FIG. 8 is a schematic diagram showing the film forming step S50 of this embodiment. The film forming step S50 is a step of forming a film portion 20 on the rear surface 10b of the base material 10. The film forming step S50 of this embodiment is performed in a state in which the base material 10 is supported by the support substrate 40. The film portion 20 of this embodiment is a metal film made of a metal material. However, the material of the film portion 20 is not limited. The film forming step S50 of this embodiment is performed by, for example, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), electrolytic plating, electroless plating, or the like. The thickness h of the film portion 20 of this embodiment is, for example, about 1 μm. However, the thickness h of the film portion 20 is not limited to that of this embodiment.

[0026] As described above, the adhesive 30 in the groove 11 is exposed on the back surface 10b. Therefore, a part of the film 20 is formed on the adhesive 30. FIG. 9 is an enlarged view of the film 20 near the groove 11. Since the film 20 is sufficiently thin at about 1 μm, when the material of the surface on which the film is formed is different, the film 20 in that part will be in a different state from the other parts. For example, the region 20b of the film 20 formed on the adhesive 30 has an observable difference such as a rougher surface roughness or a smaller or larger film thickness compared to the region 20a formed on the substrate 10. Therefore, even after the film 20 is formed on the back surface 10b, the position of the groove 11 can be grasped by observing the film 20. Note that FIG. 9 illustrates a case where the adhesive 30 is completely filled in the groove 11. However, the adhesive 30 in the groove 11 may not be filled in the groove 11 as shown in FIG. 10, or may be filled only in a part of the groove 11 as shown in FIG. 11. In these cases, the recessed shape 20c is formed on the surface of the film portion 20, so that the position of the groove portion 11 can be easily grasped by observing the film portion 20.

[0027] 12 is a schematic diagram showing the singulation step S60 of the present embodiment. The singulation step S60 is a step of cutting the base material 10 and the film portion 20 to singulate the base material 10 and extracting the semiconductor chips 10T from the base material 10. The singulation step S60 of the present embodiment is performed in a state in which the base material 10 is supported by the support substrate 40.

[0028] In the singulation step S60 of this embodiment, the cutting of the base material 10 and the film portion 20 is performed by a dicing device M using a blade 9. The cutting of the base material 10 and the film portion 20 may also be performed by using a laser dicing device.

[0029] The singulation process S60 of this embodiment is performed from the back surface 10b side of the substrate 10. Therefore, in the singulation process S60, it is difficult to observe the alignment lines L11, L12 (see FIG. 5) provided on the device surface 10a from the processing side. In this embodiment, the groove portion 11 provided on the device surface 10a penetrates to the back surface 10b side. Therefore, in the singulation process S60, the position of the groove portion 11 can be grasped from the back surface 10b side through the film portion 20. The dicing device M has an imaging device C that observes the film portion 20 from above. The dicing device M grasps the position of the groove portion 11 by observing the film portion 20 with the imaging device C, and cuts the substrate 10 based on the groove portion 11. That is, the singulation process S60 of this embodiment is performed based on the groove portion 11 that penetrates to the back surface 10b side.

[0030] 5, all alignment lines L11, L12 in this embodiment are disposed on the extensions of the grooves 11. Therefore, the dicing device M cuts the substrate 10 and the film portion 20 linearly along the grooves 11 grasped by the imaging device C, thereby dividing the substrate 10 and the film portion 20 into individual pieces. By cutting the substrate 10 and the film portion 20, a semiconductor device 1 is formed in which an electrode 20T is provided on the back surface 10b side of the semiconductor chip 10T.

[0031] As shown in FIG. 12, in the singulation step S60, a dicing groove 10G is formed in the substrate 10 by a blade 9. Even if the blade 9 has a constant thickness, the width dimension of the dicing groove 10G gradually increases from the bottom portion toward the opening side. This is because the cut surface is polished by the side of the blade 9 at the opening side of the dicing groove 10G. Therefore, the cut surfaces of the substrate 10 facing each other across the dicing groove 10G gradually move apart toward the opening side. For this reason, the pair of side surfaces 10c of the semiconductor chip 10T formed between the cut surfaces are inclined in a direction gradually approaching each other from the device surface 10a side toward the back surface 10b side.

[0032] FIG. 13 is a schematic diagram showing the outer surface etching step S70 of this embodiment. The outer surface etching step S70 is a step of performing an etching process on at least a part of the outer surface of the base material 10. In the outer surface etching step S70 of this embodiment, for example, an etching process is performed on the cut surface of the base material 10 cut in the singulation step S60. By performing etching on the cut surface, damage to the base material 10 remaining on the cut surface can be removed, and damage to the base material 10 can be suppressed. The outer surface etching step S70 of this embodiment is performed in a state supported by the support substrate 40 after the singulation step S60. That is, the base material 10 is in a state where it is supported by the support substrate 40 although it has been singulated. Therefore, the etching process can be performed without remounting it on a separately prepared support stand, and the manufacturing process can be simplified.

[0033] 14 is a schematic diagram showing the second attachment step S80 of this embodiment. In the process of moving from the singulation step S60 to the second attachment step S80, the substrate 10 is turned upside down. The second attachment step S80 is performed in a state where the substrate 10 is supported by the support substrate 40. The second attachment step S80 is a step of attaching the substrate 10 to the dicing tape 50 on the side opposite the support substrate 40. In this embodiment, since the film portion 20 is provided on the back surface 10b side of the substrate 10, the substrate 10 is attached to the dicing tape 50 via the film portion 20.

[0034] 15 is a schematic diagram showing the support substrate detaching step S90 of this embodiment. The support substrate detaching step S90 is a step of detaching the support substrate 40 from the base material 10. In the support substrate detaching step S90 of this embodiment, the adhesive 30 may be dissolved by a solvent, or the adhesive force may be weakened by irradiating a laser through the light-transmitting support substrate 40. Furthermore, the support substrate detaching step S90 may be a step of detaching the support substrate 40 from the base material 10 by mechanical peeling, in which a sharp tool is inserted between the base material 10 and the support substrate 40 to peel off the adhesive 30.

[0035] FIG. 16 is a schematic diagram showing the pick-up step S100 of this embodiment. The pick-up step S100 is a step of individually removing the individual semiconductor devices 1 on the dicing tape 50 from the dicing tape 50. In the pick-up step S100, first, a process is performed to weaken the adhesive strength of the adhesive layer on the surface of the dicing tape 50. As a process for weakening the adhesive strength of the adhesive layer of the dicing tape 50, for example, a process of irradiating the adhesive layer with ultraviolet light or heating the adhesive layer is performed. In addition, in the pick-up step S100, one semiconductor device 1 is pushed up from the lower side of the dicing tape 50 with a pin, and the semiconductor device 1 is picked up by applying negative pressure to the device surface 10a of the semiconductor device 1 and adsorbing it. By going through the above steps, the semiconductor device 1 can be manufactured.

[0036] Next, the effects of this embodiment will be described. In a conventional method for manufacturing a semiconductor device, the process of cutting and singulating a base material to form semiconductor device 1 has been performed while the base material is mounted on a dicing tape. Since dicing tape 50 has elasticity, there is a problem in that cutting the base material on the dicing tape makes the base material less stable during cutting, and the cut surface is easily damaged.

[0037] The manufacturing method of the semiconductor device 1 of this embodiment includes a first attachment step S30, a grinding step S40, a singulation step S60, and a support substrate detachment step S90, as shown in FIG. 2. As shown in FIG. 6, the first attachment step S30 is a step of attaching the device surface 10a of the substrate 10 made of a semiconductor material, on which a circuit pattern is formed, to the support substrate 40. As shown in FIG. 7, the grinding step S40 is a step of grinding the surface (initial back surface 10f) opposite to the device surface 10a while the substrate 10 is supported by the support substrate 40. The singulation step S60 is a step of cutting the substrate 10 while the substrate 10 is supported by the support substrate 40 to singulate the substrate 10. The support substrate detachment step S90 is a step of detaching the support substrate 40 from the substrate 10.

[0038] According to the above-mentioned configuration, the substrate 10 is singulated while supported by the support substrate 40. Therefore, compared to the case where the substrate 10 is singulated on the dicing tape 50, the substrate 10 can be cut while being stably supported. As a result, damage is less likely to remain on the cut surface after the singulation step S60, and it is possible to provide a semiconductor device 1 with improved quality.

[0039] According to the above-mentioned configuration, the singulation step S60 is performed with the device surface 10a attached to the support substrate 40. Generally, in the singulation step S60, particles are likely to be generated during cutting, and these particles may scatter into the processing space and contaminate the device surface 10a. In particular, when the singulation step S60 is performed on the dicing tape 50, there is a risk that a part of the dicing tape 50 will be scraped off by the blade 9 performing the singulation step S60 and adhere to the device surface 10a, making it difficult to remove. According to the above-mentioned configuration, the device surface 10a is covered by the support substrate 40 via the adhesive 30, so that it is possible to suppress the particles generated in the singulation step S60 from adhering to the device surface 10a, and it is possible to provide a semiconductor device 1 with improved quality.

[0040] Moreover, according to the above-mentioned configuration, after the singulation step S60 is completed, the singulated base material 10 (semiconductor chip 10T) is mounted on the support substrate 40. Therefore, when processing the semiconductor chip 10T after the singulation step S60 (for example, the outer surface etching step S70), it is possible to process the multiple semiconductor chips 10T on the support substrate 40 at once. On the other hand, when the singulation step S60 is performed on the dicing tape 50 as in the conventional case, etching and other processing cannot be performed on the dicing tape 50 considering damage to the dicing tape 50. Therefore, in the conventional manufacturing method, it is necessary to move the singulated semiconductor chip 10T from the dicing tape 50 to the support base and then perform the processing. According to the above-mentioned configuration, when etching and other processing is performed on the singulated semiconductor chip 10T, the process of remounting the semiconductor chip 10T on the support base can be omitted, and the manufacturing process can be simplified.

[0041] The manufacturing method of the semiconductor device 1 of this embodiment includes a film forming step S50 after the grinding step S40. In the film forming step S50, a film portion 20 is formed on the surface opposite to the device surface 10a. In the singulation step S60, the film portion 20 is cut together with the substrate 10.

[0042] According to the above-mentioned configuration, in the singulation step S60, the film part 20 and the substrate 10 are cut from the film part 20 side while the device surface 10a of the substrate 10 is supported. In a general conventional manufacturing method, the substrate on which the film part is formed is singulated from the opposite side of the film part, but in this case, there is a problem that burrs are likely to occur when the film part is cut. In particular, when the film part is a metal film, burrs are generated from the cut part toward the support part (dicing tape) due to the ductility of the metal. Furthermore, when singulation is performed on the dicing tape, the burrs may bite into the dicing tape, making it difficult to pick up the semiconductor device formed by singulation. In contrast, according to the above-mentioned configuration, in the singulation step S60, cutting is performed in the order of the film part 20 side, the film part 20 and the substrate 10, so that burrs are unlikely to occur from the film part 20, and processing of the burrs that have occurred is not required. As a result, it is possible to stably manufacture the semiconductor device 1.

[0043] The above-described method for manufacturing the semiconductor device 1 includes an outer surface etching step S70 after the singulation step S60. The outer surface etching step S70 is a step of performing an etching process on at least a part of the outer surface of the base material 10 while the base material 10 is supported by the support substrate 40.

[0044] According to the above-mentioned configuration, the outer surface etching step S70 performs an etching process on the cut surface of the base material 10 cut in the singulation step S60, for example, and can remove damage to the base material 10 remaining on the cut surface. Furthermore, the outer surface etching step S70 is performed after the singulation step S60 in a state where the base material 10 is supported by the support substrate 40. That is, although the base material 10 has been singulated, it remains supported by the support substrate 40. For this reason, the etching process can be performed without remounting the base material 10 on a separately prepared support stand, and the manufacturing process can be simplified.

[0045] The above-described method for manufacturing the semiconductor device 1 includes a second attachment step S80 before the support substrate removing step S90. In the second attachment step S80, the base material 10 is attached to a dicing tape on the side opposite to the support substrate 40 while being supported by the support substrate 40.

[0046] According to the above-described configuration, the support substrate removal step S90 can be stably performed on the dicing tape 50. Furthermore, it becomes possible to pick up the semiconductor device 1 from on the dicing tape 50, and the semiconductor device 1 can be easily picked up.

[0047] As shown in FIG. 1, the semiconductor device 1 of this embodiment includes a plate-shaped semiconductor chip 10T made of a semiconductor material. The semiconductor chip 10T has a device surface 10a, a back surface 10b, and four side surfaces 10c. A circuit pattern is formed on the device surface 10a. The back surface 10b is located on the opposite side of the device surface 10a. The four side surfaces 10c connect the device surface 10a and the back surface 10b. At least one pair of the side surfaces 10c facing opposite to each other among the four side surfaces 10c are inclined in a direction approaching each other from the device surface 10a side toward the back surface 10b side.

[0048] By performing the singulation step S60 from the back surface 10b side of the base material 10 with the blade 9, the side surfaces 10c are inclined toward each other from the device surface 10a side toward the back surface 10b side. In other words, by having such side surfaces 10c, the above-mentioned manufacturing method can be adopted, and a semiconductor device 1 with improved quality can be provided.

[0049] Modifications that can be adopted in this embodiment will be described. In this embodiment, a case has been described in which the film portion 20 is formed on the rear surface 10b of the substrate 10 in the film-forming step S50, and the semiconductor device 1 has an electrode 20T. However, the semiconductor device 1 does not have to have the electrode 20T. In this case, the film-forming step S50 is omitted in the manufacturing method of the semiconductor device 1. Also, in this case, in the singulation step S60, the imaging device C directly images the groove portion 11 exposed on the rear surface 10b.

[0050] In the present embodiment, the groove portion 11 is used as a reference for alignment in the singulation process S60. However, the reference for alignment in the singulation process S60 may be something other than the groove portion 11, in which case the mark formation process S20 can be omitted. For example, in the singulation process S60, the imaging device C may be disposed below the support substrate 40 to image the device surface 10a of the base material 10 through the transparent support substrate 40. In this case, the dicing device M inverts the image captured by the imaging device C and performs alignment for singulation based on the alignment lines L11 and L12 in the image.

[0051] 5, in this embodiment, the grooves 11 are arranged only between the removal sections S2, and are not arranged between the effective sections S1. Therefore, in this embodiment, the cut surface of the grooves 11 as a marker does not appear as the side surface 10c of the semiconductor device 1, which is the final product. However, the grooves 11 may be arranged on the alignment lines L11, L12 that define the effective sections S1.

[0052] Additionally, in the manufacturing method of the semiconductor device 1 of this embodiment, the outer side surface etching step S70 is performed after the singulation step S60. However, the outer side surface etching step may be omitted.

[0053] According to at least one of the embodiments described above, by including a singulation process S60 in which the substrate 10 is cut while supported on the support substrate 40 to separate the substrate 10, it is possible to stably hold the substrate 10 during cutting, thereby suppressing damage to the substrate 10 during cutting and providing a semiconductor device 1 with improved quality.

[0054] The semiconductor device and the method for manufacturing the semiconductor device according to the embodiment include the following additional aspects. (Appendix 1) a first attachment step of attaching a device surface of a base material made of a semiconductor material, on which a circuit pattern is to be formed, to a support substrate; a grinding step of grinding a surface opposite to the device surface while the substrate is supported by the support substrate; a singulation step of cutting the base material while it is supported by the support substrate to singulate the base material; A support substrate removing step of removing the support substrate from the base material. A method for manufacturing a semiconductor device. (Appendix 2) a film forming step of forming a film portion on a surface opposite to the device surface after the grinding step; The singulation step is a step of cutting the film portion together with the base material. The method for manufacturing the semiconductor device according to claim 1. (Appendix 3) After the singulation step, an outer surface etching step is performed to etch at least a part of an outer surface of the base material while the base material is supported by the support substrate. 3. The method for producing a semiconductor device according to claim 1 or 2. (Appendix 4) A second attachment step is included before the support substrate removal step, in which the base material is attached to a dicing tape on the opposite side of the support substrate while being supported by the support substrate. 4. A method for manufacturing a semiconductor device according to claim 1. (Appendix 5) A plate-shaped semiconductor chip made of a semiconductor material is provided, The semiconductor chip comprises: a device surface on which a circuit pattern is formed; a back surface located opposite the device surface; four side surfaces connecting the device surface and the back surface; Among the four side surfaces, at least one pair of side surfaces facing opposite directions are inclined in a direction approaching each other from the device surface side to the back surface side. Semiconductor device.

[0055] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope of the invention and its equivalents described in the claims, as well as in the scope and spirit of the invention. [Explanation of symbols]

[0056] 1...semiconductor device, 10...substrate, 10a...device surface, 10b...rear surface, 10c...side surface, 10T...semiconductor chip, 20...film portion, 40...support substrate, 50...dicing tape, S30...first attachment step, S40...grinding step, S50...film formation step, S60...single step, S70...outer surface etching step, S80...second attachment step, S90...support substrate removal step

Claims

1. a first attachment step of attaching a device surface of a base material made of a semiconductor material, on which a circuit pattern is to be formed, to a support substrate; a grinding step of grinding a surface opposite to the device surface while the substrate is supported by the support substrate; a singulation step of cutting the base material while it is supported by the support substrate to singulate the base material; A support substrate removing step of removing the support substrate from the base material. A method for manufacturing a semiconductor device.

2. a film forming step of forming a film portion on a surface opposite to the device surface after the grinding step; The singulation step is a step of cutting the film portion together with the base material. The method for manufacturing a semiconductor device according to claim 1 .

3. After the singulation step, an outer surface etching step is performed to etch at least a part of an outer surface of the base material while the base material is supported by the support substrate. The method for manufacturing a semiconductor device according to claim 1 .

4. a second attachment step of attaching the base material to a dicing tape on the opposite side of the support substrate while the base material is supported by the support substrate, prior to the support substrate removal step; The method for manufacturing a semiconductor device according to claim 1 .

5. A plate-shaped semiconductor chip made of a semiconductor material is provided, The semiconductor chip comprises: a device surface on which a circuit pattern is formed; a back surface located opposite the device surface; four side surfaces connecting the device surface and the back surface; At least one pair of side surfaces facing opposite directions among the four side surfaces are inclined in directions approaching each other from the device surface side to the back surface side. Semiconductor device.

Images