Lamination-type electronic component

Abstract

To realize a desired characteristic while suppressing the generation of a problem caused by a shield conductor.SOLUTION: An electronic component 1 comprises: a lamination body 50; a first inductor L21; a second inductor L22; a third inductor L23; and a shield conductor 80. The shield conductor 80 contains: a first conductive part 80E provided on a side surface 50E of the lamination body 50; and a second conductive part 80F provided on a side surface 50F of the lamination body 50. The electronic component 1 further comprises: conductive layers 571 and 661 that connect two column conductors T1a of the first inductor L21 with the first conductive part 80E; conductive layers 572 and 602 that connect two column conductors T2b of the second inductor L22 with the second conductive part 80F; and conductive layers 573 and 673 that connect two column conductors T3a of the third inductor L23 with the first conductive part 80E.SELECTED DRAWING: Figure 12

Description

[Technical field]

[0001] The present invention relates to a multilayer electronic component having a shielding conductor integrated into the laminate. [Background technology]

[0002] In small mobile communication devices, a common configuration is provided in which an antenna is provided for common use among multiple applications that use different systems and different frequency bands, and a splitter is used to separate the multiple signals transmitted and received by this antenna.

[0003] In general, a duplexer that separates a first signal having a frequency within a first frequency band from a second signal having a frequency within a second frequency band higher than the first frequency band includes a common port, a first signal port, a second signal port, a first filter provided in a first signal path from the common port to the first signal port, and a second filter provided in a second signal path from the common port to the second signal port. For example, an LC resonator configured using an inductor and a capacitor is used as the first and second filters.

[0004] In recent years, there has been a market demand for miniaturization and space saving of small mobile communication devices, and there is also a demand for miniaturization of duplexers used in such communication devices. As a duplexer suitable for miniaturization, a multilayer duplexer using a laminate including a plurality of laminated dielectric layers and a plurality of conductor layers is known. As an inductor used in a multilayer duplexer, an inductor composed of a conductor layer and a columnar conductor extending in the lamination direction of the plurality of dielectric layers is known. Such an inductor is disclosed, for example, in Patent Document 1.

[0005] In addition, as small mobile communication devices become smaller and more space-saving, electronic components used in communication devices are being mounted at higher density. As a result, the intervals between multiple electronic components mounted on a mounting board are becoming smaller. When the intervals between multiple electronic components become smaller, electromagnetic interference between the multiple electronic components is more likely to occur. In order to suppress electromagnetic interference, it is possible to provide a shield on the main body of the electronic component. Patent Document 2 discloses an electronic component in which an external electrode is provided on the bottom surface of the laminate of the multilayer electronic component, and a shield electrode is provided on the surface other than the bottom surface of the laminate of the multilayer electronic component. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2021-121110 [Patent Document 2] JP 2017-076796 A Summary of the Invention [Problem to be solved by the invention]

[0007] When an inductor composed of a conductor layer and a columnar conductor as disclosed in Patent Document 1 is applied to an electronic component having a shield as disclosed in Patent Document 2, the coupling between the columnar conductor and the shield becomes strong when the laminate is miniaturized, and as a result, it may not be possible to achieve the desired characteristics. This problem becomes more pronounced in particular when multiple inductors are provided.

[0008] The above problem is not limited to multilayer duplexers, but applies to all multilayer electronic components that include a shield and an inductor formed of a conductor layer and a columnar conductor.

[0009] The present invention has been made in consideration of these problems, and an object of the present invention is to provide a multilayer electronic component including a shielding conductor integrated with a laminate, and an inductor constituted by a conductor layer and a columnar conductor, which is capable of achieving desired characteristics while suppressing the occurrence of problems caused by the shielding conductor. [Means for solving the problem]

[0010] The multilayer electronic component of the present invention includes a laminate including a plurality of laminated dielectric layers, a first inductor, a second inductor, and a third inductor provided in the laminate, and a shield conductor made of a conductor and integrated with the laminate. The laminate has a first surface and a second surface located at both ends in the stacking direction of the plurality of dielectric layers, and a first side surface, a second side surface, a third side surface, and a fourth side surface connecting the first surface and the second surface. The first side surface and the second side surface face in opposite directions to each other. The third side surface and the fourth side surface face in opposite directions to each other. The shield conductor includes a first conductor portion provided on the first side surface and a second conductor portion provided on the second side surface.

[0011] The second inductor is disposed between the first inductor and the third inductor. Each of the first inductor, the second inductor, and the third inductor includes a conductor layer extending along a plane intersecting the stacking direction and having a first end and a second end located at both ends in the longitudinal direction, a first columnar conductor extending in a direction parallel to the stacking direction and connected to a portion near the first end of the conductor layer, and a second columnar conductor extending in a direction parallel to the stacking direction and connected to a portion near the second end of the conductor layer. The first end of the conductor layer is located closer to the first conductor portion than the second conductor portion. The second end of the conductor layer is located closer to the second conductor portion than the first conductor portion.

[0012] The multilayer electronic component of the present invention further includes a first connecting conductor connecting the first columnar conductor and the first conductor portion of the first inductor, a second connecting conductor connecting the second columnar conductor and the second conductor portion of the second inductor, and a third connecting conductor connecting the first columnar conductor and the first conductor portion of the third inductor. Effect of the Invention

[0013] In the multilayer electronic component of the present invention, the first columnar conductor of each of the first and third inductors is connected to the first conductor portion of the shield conductor, and the second columnar conductor of the second inductor is connected to the second conductor portion of the shield conductor, thereby making it possible to realize desired characteristics while suppressing problems caused by the shield conductor. [Brief description of the drawings]

[0014] [Figure 1] 1 is a circuit diagram showing an example of a circuit configuration of a multilayer electronic component according to an embodiment of the present invention. [Diagram 2] 1 is a perspective view showing an external appearance of a multilayer electronic component according to an embodiment of the present invention; [Diagram 3] 1 is a perspective view showing a laminate of a multilayer electronic component according to an embodiment of the present invention; [Figure 4] FIG. 2 is an explanatory diagram showing a pattern formation surface of the first to third dielectric layers in a laminate of the multilayer electronic component according to the embodiment of the present invention. [Diagram 5] FIG. 2 is an explanatory diagram showing the pattern formation surfaces of the fourth to sixth dielectric layers in the laminate of the multilayer electronic component according to the embodiment of the present invention. [Figure 6] FIG. 2 is an explanatory diagram showing pattern formation surfaces of seventh to tenth dielectric layers in a laminate of a multilayer electronic component according to one embodiment of the present invention. [Figure 7] FIG. 2 is an explanatory diagram showing the pattern formation surfaces of eleventh to thirteenth dielectric layers in a laminate of a multilayer electronic component according to one embodiment of the present invention. [Figure 8]3 is an explanatory diagram showing the pattern formation surfaces of the 14th to 16th dielectric layers in the laminate of the multilayer electronic component according to the embodiment of the present invention. FIG. [Figure 9] FIG. 2 is an explanatory diagram showing pattern formation surfaces of 17th to 19th dielectric layers in a laminate of a multilayer electronic component according to an embodiment of the present invention. [Figure 10] FIG. 2 is an explanatory diagram showing the pattern formation surfaces of 20th to 22nd dielectric layers in a laminate of a multilayer electronic component according to one embodiment of the present invention. [Figure 11] 1 is a perspective view showing an inside of a laminate of a multilayer electronic component according to an embodiment of the present invention; [Figure 12] 1 is a plan view showing a part of the inside of a multilayer electronic component according to an embodiment of the present invention. [Figure 13] FIG. 13 is a characteristic diagram showing the passing attenuation characteristics of the model of the embodiment. [Figure 14] FIG. 13 is a characteristic diagram showing frequency characteristics of isolation of the model of the embodiment. [Figure 15] FIG. 11 is a characteristic diagram showing the pass attenuation characteristics of the model of the first comparative example. [Figure 16] FIG. 13 is a characteristic diagram showing frequency characteristics of isolation of a model of the second comparative example. [Figure 17] FIG. 13 is a characteristic diagram showing frequency characteristics of isolation in a model of a third comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. First, with reference to FIG. 1, a schematic configuration of a multilayer electronic component (hereinafter simply referred to as electronic component) 1 according to an embodiment of the present invention will be described. FIG. 1 is a circuit diagram showing a circuit configuration of the electronic component 1. FIG. 1 shows a branching filter (diplexer) as an example of the electronic component 1. The electronic component 1 includes a common terminal 2, a first signal terminal 3, a second signal terminal 4, a first filter 10, and a second filter 20.

[0016] In terms of the circuit configuration, the first filter 10 is provided between the common terminal 2 and the first signal terminal 3. The second filter 20 is provided between the common terminal 2 and the second signal terminal 4. In this application, the expression "in terms of the circuit configuration" is used to indicate the arrangement on a circuit diagram, not the arrangement in a physical configuration.

[0017] The first filter 10 is a filter that selectively passes signals having frequencies within a first passband. The second filter 20 is a filter that selectively passes signals having frequencies within a second passband that is higher than the first passband. Each of the first and second filters 10 and 20 is formed of an LC filter circuit including at least one inductor and at least one capacitor.

[0018] The common terminal 2 corresponds to the "first terminal" in the present invention. The first signal terminal 3 corresponds to the "third terminal" in the present invention. The second signal terminal 4 corresponds to the "second terminal" in the present invention. The first filter 10 corresponds to the "second circuit" in the present invention. The second filter 20 corresponds to the "first circuit" in the present invention.

[0019] A first signal having a frequency within a first passband input to the common terminal 2 selectively passes through a first filter 10 and is output from a first signal terminal 3. A second signal having a frequency within a second passband input to the common terminal 2 selectively passes through a second filter 20 and is output from a second signal terminal 4. In this manner, the electronic component 1 separates the first and second signals.

[0020] Next, an example of the configuration of the first and second filters 10, 20 will be described with reference to Fig. 1. First, the configuration of the first filter 10 will be described. The first filter 10 includes inductors L11, L12, and L13, and capacitors C11, C12, and C13.

[0021] One end of the inductor L11 is connected to the common terminal 2. One end of the inductor L12 is connected to the other end of the inductor L11. One end of the inductor L13 is connected to the other end of the inductor L12. The other end of the inductor L13 is connected to the first signal terminal 3.

[0022] One end of the capacitor C11 is connected to the connection point between the inductor L11 and the inductor L12. One end of the capacitor C12 is connected to the connection point between the inductor L12 and the inductor L13. The other ends of the capacitors C11 and C12 are connected to ground. The capacitor C13 is connected in parallel to the inductor L12.

[0023] Next, a description will be given of the configuration of the second filter 20. The second filter 20 includes a first inductor L21, a second inductor L22, a third inductor L23, a fourth inductor L24, and capacitors C21, C22, C23, C24, C25, C26, C27, and C28.

[0024] One end of the capacitor C21 is connected to the common terminal 2. One end of the capacitor C22 is connected to the other end of the capacitor C21.

[0025] One end of the first inductor L21 is connected to the connection point between the capacitors C21 and C22. The other end of the first inductor L21 is connected to ground. One end of the capacitor C23 is connected to one end of the first inductor L21. The other end of the capacitor C23 is connected to ground.

[0026] One end of the capacitor C24 is connected to the other end of the capacitor C22. One end of the second inductor L22 is connected to the other end of the capacitor C24. The other end of the second inductor L22 is connected to ground. One end of the capacitor C25 is connected to one end of the second inductor L22. The other end of the capacitor C25 is connected to ground.

[0027] One end of the fourth inductor L24 is connected to the connection point between the capacitor C22 and the capacitor C24. The capacitor C28 is connected in parallel to the fourth inductor L24.

[0028] One end of the capacitor C26 is connected to the other end of the fourth inductor L24. The other end of the capacitor C26 is connected to the second signal terminal 4. One end of the third inductor L23 is connected to the other end of the capacitor C26. The other end of the third inductor L23 is connected to ground. One end of the capacitor C27 is connected to one end of the third inductor L23. The other end of the capacitor C27 is connected to ground.

[0029] The electronic component 1 further includes a parallel resonant circuit 21. In particular, in this embodiment, the filter 20 includes the parallel resonant circuit 21. In FIG. 1, a reference character P indicates a node between one end of the first inductor L21 and one end of the second inductor L22 in the circuit configuration. The parallel resonant circuit 21 is provided on a path 22 that connects the node P and one end of the third inductor L23. In the example shown in FIG. 1, the parallel resonant circuit 21 includes a fourth inductor L24 and a capacitor C28.

[0030] Next, other configurations of the electronic component 1 will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a perspective view showing the external appearance of the electronic component 1. Fig. 3 is a perspective view showing the laminate of the electronic component 1.

[0031] The electronic component 1 includes a laminate 50. The laminate 50 includes a plurality of laminated dielectric layers and a plurality of conductors (a plurality of conductor layers and a plurality of through holes). The common terminal 2, the first signal terminal 3, the second signal terminal 4, the first filter 10, the second filter 20, and the parallel resonant circuit 21 are integrated into the laminate 50.

[0032] The laminate 50 has a first surface 50A and a second surface 50B located at both ends in a stacking direction T of the multiple dielectric layers, and four side surfaces 50C to 50F connecting the first surface 50A and the second surface 50B. The side surfaces 50C and 50D face in opposite directions to each other, and the side surfaces 50E and 50F also face in opposite directions to each other. The side surfaces 50C to 50F may be perpendicular to the first surface 50A and the second surface 50B.

[0033] Here, the X direction, Y direction, and Z direction are defined as shown in FIG. 2 and FIG. 3. The X direction, Y direction, and Z direction are mutually perpendicular. In this embodiment, a direction parallel to the stacking direction T is defined as the Z direction. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The expression "when viewed from the stacking direction T" means that the object is viewed from a position away in the Z direction or the -Z direction.

[0034] As shown in FIG. 3, the first surface 50A is located at the end of the laminate 50 in the -Z direction. The first surface 50A is also the bottom surface of the laminate 50. The second surface 50B is located at the end of the laminate 50 in the Z direction. The second surface 50B is also the top surface of the laminate 50. The side surface 50C is located at the end of the laminate 50 in the -X direction. The side surface 50D is located at the end of the laminate 50 in the X direction. The side surface 50E is located at the end of the laminate 50 in the -Y direction. The side surface 50F is located at the end of the laminate 50 in the Y direction.

[0035] As shown in FIG. 2 and FIG. 3, the electronic component 1 further includes electrodes 111, 112, and 113 provided on the first surface 50A of the laminate 50. The electrode 111 is disposed closer to the side surface 50F than the side surface 50E. The electrodes 112 and 113 are disposed closer to the side surface 50E than the side surface 50F. The electrode 112 is disposed near a corner at a position where the side surface 50C and the side surface 50E intersect, and the electrode 113 is disposed near a corner at a position where the side surface 50D and the side surface 50E intersect. The electrode 111 corresponds to the common terminal 2, the electrode 112 corresponds to the first signal terminal 3, and the electrode 113 corresponds to the second signal terminal 4. Thus, the common terminal 2 and the first and second signal terminals 3 and 4 are provided on the first surface 50A of the laminate 50.

[0036] The electronic component 1 further includes electrodes 114, 115, and 116 provided on the first surface 50A of the laminate 50. The electrode 114 is disposed between the electrodes 112 and 113. The electrode 115 is disposed between the electrode 111 and the side surface 50D. The electrode 116 is disposed between the electrode 111 and the side surface 50C. Each of the electrodes 114, 115, and 116 is connected to ground.

[0037] The electronic component 1 further includes a shield conductor 80 made of a conductor and integrated with the laminate 50. The shield conductor 80 includes a first conductor portion 80E provided on a side surface 50E of the laminate 50 and a second conductor portion 80F provided on a side surface 50F of the laminate 50. In particular, in this embodiment, the first conductor portion 80E covers the entirety or almost the entirety of the side surface 50E. The second conductor portion 80F covers the entirety or almost the entirety of the side surface 50F.

[0038] The shield conductor 80 further includes a conductor portion 80B provided on the second surface 50B of the laminate 50, a conductor portion 80C provided on the side surface 50C of the laminate 50, and a conductor portion 80D provided on the side surface 50D of the laminate 50. In particular, in this embodiment, the conductor portion 80B covers the entire second surface 50B. The conductor portion 80C covers the entire or almost the entire side surface 50C. The conductor portion 80D covers the entire or almost the entire side surface 50D.

[0039] The shield conductor 80 may include a plurality of laminated metal layers. In this case, the first conductor portion 80E, the second conductor portion 80F, and the conductor portions 80B, 80C, and 80D are preferably continuous. In other words, the first and second conductor portions 80E and 80F are preferably connected to the conductor portions 80B to 80D, respectively.

[0040] The shielding conductor 80 is electrically connected to the electrodes 114, 115, and 116. The laminate 50 includes a plurality of conductors that electrically connect the shielding conductor 80 and the electrodes 114, 115, and 116.

[0041] Next, an example of a plurality of dielectric layers and a plurality of conductors constituting the laminate 50 will be described with reference to Fig. 4(a) to Fig. 10(b). In this example, the laminate 50 includes 22 laminated dielectric layers. Hereinafter, the 22 dielectric layers are referred to as the 1st to 22nd dielectric layers from the bottom up. The 1st to 22nd dielectric layers are denoted by reference numerals 51 to 72.

[0042] In Figures 4(a) to 9(b), a plurality of circles represent a plurality of through holes. A plurality of through holes are formed in each of the dielectric layers 51 to 68. The plurality of through holes are formed by filling holes for the through holes with a conductive paste. Each of the plurality of through holes is connected to an electrode, a conductive layer, or another through hole.

[0043] 4(a) to 9(b), specific through holes among the multiple through holes are labeled with reference numerals. The connection relationship between each of the specific through holes and the conductor layers or other through holes is described with reference to the state in which the 1st to 22nd dielectric layers 51 to 72 are stacked.

[0044] 4(a) shows the pattern-formed surface of the first dielectric layer 51. On the pattern-formed surface of the dielectric layer 51, electrodes 111 to 116 are formed.

[0045] 4(a), the two through holes marked with the reference numeral 51T5 are connected to the electrode 114. In the following description, the through hole marked with the reference numeral 51T5 will be referred to simply as the through hole 51T5. Also, through holes marked with reference numerals other than the through hole 51T5 will be referred to in the same manner as the through hole 51T5.

[0046] The two through holes 51T6 shown in Fig. 4(a) are connected to the electrodes 115. The two through holes 51T7 shown in Fig. 4(a) are connected to the electrodes 116.

[0047] 4(b) shows the pattern formation surface of the second dielectric layer 52. On the pattern formation surface of the dielectric layer 52, conductor layers 521, 522, 523, and 524 are formed.

[0048] The two through holes 51T5 are connected to the two through holes 52T5 shown in Fig. 4(b). The two through holes 51T6 and the two through holes 52T6 shown in Fig. 4(b) are connected to the conductor layer 524. The two through holes 51T7 and the two through holes 52T7 shown in Fig. 4(b) are connected to the conductor layer 521.

[0049] 4(c) shows the pattern formation surface of the third dielectric layer 53. On the pattern formation surface of the dielectric layer 53, conductor layers 531, 532, 533, and 534 are formed.

[0050] The two through holes 52T5, the two through holes 52T6, and the two through holes 52T7, and the two through holes 53T1a, the two through holes 53T2b, and the through hole 53T3 shown in FIG.

[0051] 5(a) shows a pattern formation surface of the fourth dielectric layer 54. On the pattern formation surface of the dielectric layer 54, conductor layers 541, 542, 543, and 544 are formed.

[0052] The two through holes 53T1a and the two through holes 53T2b are respectively connected to the two through holes 54T1a and the two through holes 54T2b shown in Fig. 5(a). The two through holes 54T1b shown in Fig. 5(a) are connected to the conductor layer 542. The two through holes 54T2a and the two through holes 54T3b shown in Fig. 5(a) are respectively connected to the conductor layers 543 and 544. The through hole 53T3 is connected to the through hole 54T3 shown in Fig. 5(a).

[0053] 5(b) shows the pattern formation surface of the fifth dielectric layer 55. On the pattern formation surface of the dielectric layer 55, conductor layers 551 and 552 are formed.

[0054] The two through holes 54T1a, the two through holes 54T1b, the two through holes 54T2a, the two through holes 54T2b, and the two through holes 54T3b are respectively connected to the two through holes 55T1a, the two through holes 55T1b, the two through holes 55T2a, the two through holes 55T2b, and the two through holes 55T3b shown in Fig. 5(b). The through hole 54T3 is connected to the through hole 55T3 shown in Fig. 5(b). The through holes 55T4a and 55T4b shown in Fig. 5(b) are respectively connected to the conductor layers 551 and 552.

[0055] 5(c) shows the pattern-formed surface of the sixth dielectric layer 56. On the pattern-formed surface of the dielectric layer 56, a conductor layer 561 is formed.

[0056] The two through holes 55T1a, the two through holes 55T1b, the two through holes 55T2a, the two through holes 55T2b, and the two through holes 55T3b are respectively connected to the two through holes 56T1a, the two through holes 56T1b, the two through holes 56T2a, the two through holes 56T2b, and the two through holes 56T3b shown in Fig. 5(c). The through holes 55T3, 55T4a, and 55T4b are respectively connected to the through holes 56T3, 56T4a, and 56T4b shown in Fig. 5(c).

[0057] 6(a) shows the pattern-formed surface of the seventh dielectric layer 57. Conductor layers 571, 572, 573, and 574 are formed on the pattern-formed surface of the dielectric layer 57. The conductor layers 571 and 573 are connected to a first conductor portion 80E (see FIG. 2) of the shield conductor 80. The conductor layer 572 is connected to a second conductor portion 80F (see FIG. 2) of the shield conductor 80. The conductor layer 574 is connected to the second conductor portion 80F and the conductor portion 80C (see FIG. 2) of the shield conductor 80.

[0058] The two through holes 56T1a and the two through holes 57T1a shown in FIG. 6(a) are connected to the conductor layer 571. The two through holes 56T2b and the two through holes 57T2b shown in FIG. 6(a) are connected to the conductor layer 572. The through holes 56T3 and the two through holes 57T3a shown in FIG. 6(a) are connected to the conductor layer 573. The two through holes 56T1b, the two through holes 56T2a, and the two through holes 56T3b are respectively connected to the two through holes 57T1b, the two through holes 57T2a, and the two through holes 57T3b shown in FIG. 6(a). The through holes 56T4a and 56T4b are respectively connected to the through holes 57T4a and 57T4b shown in FIG. 6(a).

[0059] 6(b) shows the pattern-formed surfaces of the eighth and ninth dielectric layers 58 and 59. Two through holes 57T1a, two through holes 57T1b, two through holes 57T2a, two through holes 57T2b, two through holes 57T3a, and two through holes 57T3b are respectively connected to two through holes 58T1a, two through holes 58T1b, two through holes 58T2a, two through holes 58T2b, two through holes 58T3a, and two through holes 58T3b formed in the dielectric layer 58. The through holes 57T4a and 57T4b are respectively connected to through holes 58T4a and 58T4b formed in the dielectric layer 58. In addition, in the dielectric layers 58 and 59, through holes with the same reference numerals that are vertically adjacent to each other are connected to each other.

[0060] 6(c) shows the pattern-formed surface of the tenth dielectric layer 60. A conductor layer 602 is formed on the pattern-formed surface of the dielectric layer 60. The conductor layer 602 is connected to the second conductor portion 80F of the shield conductor 80 (see FIG. 2).

[0061] The two through holes 58T1a, the two through holes 58T1b, the two through holes 58T2a, the two through holes 58T3a, and the two through holes 58T3b formed in the dielectric layer 59 are respectively connected to the two through holes 60T1a, the two through holes 60T1b, the two through holes 60T2a, the two through holes 60T3a, and the two through holes 60T3b shown in Fig. 6(c). The two through holes 58T2b formed in the dielectric layer 59 and the two through holes 60T2b shown in Fig. 6(c) are connected to the conductor layer 602. The through holes 58T4a and 58T4b formed in the dielectric layer 59 are respectively connected to the through holes 60T4a and 60T4b shown in Fig. 6(c).

[0062] Fig. 7(a) shows the pattern-formed surface of the eleventh dielectric layer 61. Two through holes 60T1a, two through holes 60T1b, two through holes 60T2a, two through holes 60T2b, two through holes 60T3a, and two through holes 60T3b are respectively connected to two through holes 61T1a, two through holes 61T1b, two through holes 61T2a, two through holes 61T2b, two through holes 61T3a, and two through holes 61T3b shown in Fig. 7(a). Through holes 60T4a and 60T4b are respectively connected to through holes 61T4a and 61T4b shown in Fig. 7(a).

[0063] 7(b) shows the pattern-formed surface of the twelfth dielectric layer 62. On the pattern-formed surface of the dielectric layer 62, conductor layers 621 and 622 for inductors are formed.

[0064] The two through holes 61T1a, the two through holes 61T1b, the two through holes 61T2a, the two through holes 61T2b, the two through holes 61T3a, and the two through holes 61T3b are respectively connected to the two through holes 62T1a, the two through holes 62T1b, the two through holes 62T2a, the two through holes 62T2b, the two through holes 62T3a, and the two through holes 62T3b shown in Fig. 7(b). The through holes 61T4a and 61T4b are respectively connected to the through holes 62T4a and 62T4b shown in Fig. 7(b).

[0065] Fig. 7(c) shows the pattern-formed surface of the 13th dielectric layer 63. Two through holes 62T1a, two through holes 62T1b, two through holes 62T2a, two through holes 62T2b, two through holes 62T3a, and two through holes 62T3b are respectively connected to two through holes 63T1a, two through holes 63T1b, two through holes 63T2a, two through holes 63T2b, two through holes 63T3a, and two through holes 63T3b shown in Fig. 7(c). Through holes 62T4a and 62T4b are respectively connected to through holes 63T4a and 63T4b shown in Fig. 7(c).

[0066] 8(a) shows the pattern-formed surface of the 14th dielectric layer 64. A conductor layer 641 for an inductor is formed on the pattern-formed surface of the dielectric layer 64. The conductor layer 641 has a first end and a second end located at both ends in the longitudinal direction of the conductor layer 641. The through-hole 63T4a is connected to a portion of the conductor layer 641 near the first end. The through-hole 63T4b is connected to a portion of the conductor layer 641 near the second end.

[0067] The two through holes 63T1a, the two through holes 63T1b, the two through holes 63T2a, the two through holes 63T2b, the two through holes 63T3a and the two through holes 63T3b are respectively connected to the two through holes 64T1a, the two through holes 64T1b, the two through holes 64T2a, the two through holes 64T2b, the two through holes 64T3a and the two through holes 64T3b shown in Figure 8(a).

[0068] 8(b) shows the pattern-formed surface of the 15th dielectric layer 65. A conductor layer 651 for an inductor and a conductor layer 654 are formed on the pattern-formed surface of the dielectric layer 65. The conductor layer 654 is connected to the second conductor portion 80F and the conductor portion 80C of the shield conductor 80 (see FIG. 2).

[0069] The two through holes 64T1a, the two through holes 64T1b, the two through holes 64T2a, the two through holes 64T2b, the two through holes 64T3a and the two through holes 64T3b are respectively connected to the two through holes 65T1a, the two through holes 65T1b, the two through holes 65T2a, the two through holes 65T2b, the two through holes 65T3a and the two through holes 65T3b shown in Figure 8(b).

[0070] 8(c) shows the pattern-formed surface of the 16th dielectric layer 66. A conductor layer 661 is formed on the pattern-formed surface of the dielectric layer 66. The conductor layer 661 is connected to the first conductor portion 80E of the shield conductor 80 (see FIG. 2).

[0071] The two through holes 65T1a and the two through holes 66T1a shown in Fig. 8(c) are connected to the conductor layer 661. The two through holes 65T1b, the two through holes 65T2a, the two through holes 65T2b, the two through holes 65T3a, and the two through holes 65T3b are respectively connected to the two through holes 66T1b, the two through holes 66T2a, the two through holes 66T2b, the two through holes 66T3a, and the two through holes 66T3b shown in Fig. 8(c).

[0072] 9(a) shows the pattern-formed surface of the 17th dielectric layer 67. A conductor layer 673 is formed on the pattern-formed surface of the dielectric layer 67. The conductor layer 673 is connected to a first conductor portion 80E of the shield conductor 80 (see FIG. 2).

[0073] The two through holes 66T1a, the two through holes 66T1b, the two through holes 66T2a, the two through holes 66T2b, and the two through holes 66T3b are respectively connected to the two through holes 67T1a, the two through holes 67T1b, the two through holes 67T2a, the two through holes 67T2b, and the two through holes 67T3b shown in Fig. 9(a). The two through holes 66T3a and the two through holes 67T3a shown in Fig. 9(a) are connected to the conductor layer 673.

[0074] FIG. 9(b) shows the pattern-formed surface of the 18th dielectric layer 68. Conductor layers 681, 682, and 683 for inductors are formed on the pattern-formed surface of the dielectric layer 68. The conductor layer 681 has a first end 681a and a second end 681b located at both ends of the conductor layer 681 in the longitudinal direction. The conductor layer 682 has a first end 682a and a second end 682b located at both ends of the conductor layer 682 in the longitudinal direction. The conductor layer 683 has a first end 683a and a second end 683b located at both ends of the conductor layer 683 in the longitudinal direction. Each of the first ends 681a, 682a, and 683a is located closer to the first conductor portion 80E of the shield conductor 80 than the second conductor portion 80F of the shield conductor 80 (upper position in FIG. 9(b)). Each of the second ends 681b, 682b, 683b is located closer to the second conductor portion 80F of the shield conductor 80 than to the first conductor portion 80E of the shield conductor 80 (lower position in FIG. 9(b)).

[0075] The two through holes 67T1a and the two through holes 68T1a shown in FIG. 9(b) are connected to a portion near the first end 681a of the conductor layer 681. The two through holes 67T1b and the two through holes 68T1b shown in FIG. 9(b) are connected to a portion near the second end 681b of the conductor layer 681. The two through holes 67T2a and the two through holes 68T2a shown in FIG. 9(b) are connected to a portion near the first end 682a of the conductor layer 682. The two through holes 67T2b and the two through holes 68T2b shown in FIG. 9(b) are connected to a portion near the second end 682b of the conductor layer 682. The two through holes 67T3a and the two through holes 68T3a shown in FIG. 9(b) are connected to a portion near the first end 683a of the conductor layer 683. The two through holes 67T3b and the two through holes 68T3b shown in FIG. 9(b) are connected to a portion of the conductor layer 683 in the vicinity of the second end 683b.

[0076] FIG. 9(c) shows the pattern-formed surface of the 19th dielectric layer 69. Conductor layers 691, 692, and 693 for inductors are formed on the pattern-formed surface of the dielectric layer 69. The conductor layer 691 has a first end 691a and a second end 691b located at both ends of the conductor layer 691 in the longitudinal direction. The conductor layer 692 has a first end 692a and a second end 692b located at both ends of the conductor layer 692 in the longitudinal direction. The conductor layer 693 has a first end 693a and a second end 693b located at both ends of the conductor layer 693 in the longitudinal direction. Each of the first ends 691a, 692a, and 693a is located closer to the first conductor portion 80E of the shield conductor 80 than the second conductor portion 80F of the shield conductor 80 (upper position in FIG. 9(c)). Each of the second ends 691b, 692b, 693b is located closer to the second conductor portion 80F of the shield conductor 80 than to the first conductor portion 80E of the shield conductor 80 (lower position in FIG. 9(c)).

[0077] The two through holes 68T1a are connected to a portion near a first end 691a of the conductor layer 691. The two through holes 68T1b are connected to a portion near a second end 691b of the conductor layer 691. The two through holes 68T2a are connected to a portion near a first end 692a of the conductor layer 692. The two through holes 68T2b are connected to a portion near a second end 692b of the conductor layer 692. The two through holes 68T3a are connected to a portion near a first end 693a of the conductor layer 693. The two through holes 68T3b are connected to a portion near a second end 693b of the conductor layer 693.

[0078] 10(a) shows the pattern-formed surfaces of the 20th and 21st dielectric layers 70, 71. No conductor layer or through-hole is formed on the pattern-formed surfaces of the dielectric layers 70, 71.

[0079] 10(b) shows the pattern-formed surface of the 22nd dielectric layer 72. On the pattern-formed surface of the dielectric layer 72, a mark 721 is formed.

[0080] The laminate 50 shown in Figures 2 and 3 is formed by stacking the first to twenty-second dielectric layers 51-72 such that the pattern-forming surface of the first dielectric layer 51 becomes the first side 50A of the laminate 50, and the surface opposite the pattern-forming surface of the twenty-second dielectric layer 72 becomes the second side 50B of the laminate 50.

[0081] Fig. 11 shows the inside of the laminate 50 configured by laminating the 1st to 22nd dielectric layers 51 to 72. As shown in Fig. 11, the multiple conductor layers and multiple through holes shown in Fig. 4(a) to Fig. 9(c) are laminated inside the laminate 50. Note that the mark 721 is omitted in Fig. 11.

[0082] The following describes the correspondence between the components of the circuit of electronic component 1 shown in Fig. 1 and the internal components of laminate 50 shown in Fig. 4(a) to Fig. 10(b). First, first filter 10 will be described.

[0083] The inductor L11 is formed by an inductor conductor layer 651. The inductor L12 is formed by an inductor conductor layer 621. The inductor L13 is formed by an inductor conductor layer 622.

[0084] Capacitor C11 is composed of conductor layers 521 and 531 and a dielectric layer 52 between these conductor layers. Capacitor C12 is composed of conductor layers 532 and 541 and a dielectric layer 53 between these conductor layers. Capacitor C13 is composed of conductor layers 531 and 541 and a dielectric layer 53 between these conductor layers.

[0085] Next, a description will be given of components of the second filter 20. The first inductor L21 is composed of inductor conductor layers 681 and 691 and through holes 53T1a, 54T1a, 54T1b, 55T1a, 55T1b, 56T1a, 56T1b, 57T1a, 57T1b, 58T1a, 58T1b, 60T1a, 60T1b, 61T1a, 61T1b, 62T1a, 62T1b, 63T1a, 63T1b, 64T1a, 64T1b, 65T1a, 65T1b, 66T1a, 66T1b, 67T1a, 67T1b, 68T1a, and 68T1b.

[0086] The second inductor L22 is composed of inductor conductor layers 682, 692 and through holes 53T2b, 54T2a, 54T2b, 55T2a, 55T2b, 56T2a, 56T2b, 57T2a, 57T2b, 58T2a, 58T2b, 60T2a, 60T2b, 61T2a, 61T2b, 62T2a, 62T2b, 63T2a, 63T2b, 64T2a, 64T2b, 65T2a, 65T2b, 66T2a, 66T2b, 67T2a, 67T2b, 68T2a, 68T2b.

[0087] The third inductor L23 is composed of inductor conductor layers 683, 693 and through holes 53T3, 54T3, 54T3b, 55T3, 55T3b, 56T3, 56T3b, 57T3a, 57T3b, 58T3a, 58T3b, 60T3a, 60T3b, 61T3a, 61T3b, 62T3a, 62T3b, 63T3a, 63T3b, 64T3a, 64T3b, 65T3a, 65T3b, 66T3a, 66T3b, 67T3a, 67T3b, 68T3a, 68T3b.

[0088] The fourth inductor L24 is composed of a conductor layer 641 for an inductor and through holes 55T4a, 55T4b, 56T4a, 56T4b, 57T4a, 57T4b, 58T4a, 58T4b, 60T4a, 60T4b, 61T4a, 61T4b, 62T4a, 62T4b, 63T4a, and 63T4b.

[0089] Capacitor C21 is composed of conductor layers 522 and 533 and a dielectric layer 52 between these conductor layers. Capacitor C22 is composed of conductor layers 542 and 551 and a dielectric layer 54 between these conductor layers. Capacitor C23 is composed of conductor layers 534 and 542 and a dielectric layer 53 between these conductor layers. Capacitor C24 is composed of conductor layers 543 and 561 and dielectric layers 54 and 55 between these conductor layers. Capacitor C25 is composed of conductor layers 534 and 543 and a dielectric layer 53 between these conductor layers.

[0090] Capacitor C26 is composed of conductor layers 544 and 552 and a dielectric layer 54 between these conductor layers. Capacitor C27 is composed of conductor layers 534 and 544 and a dielectric layer 53 between these conductor layers. Capacitor C28 is composed of conductor layers 552 and 561 and a dielectric layer 55 between these conductor layers.

[0091] Next, structural features of the electronic component 1 according to the present embodiment will be described with reference to Figures 1 to 12. Figure 12 is a plan view showing a part of the interior of the electronic component 1. Note that Figure 12 shows the interior of the laminate 50 as viewed from the second surface 50B side of the laminate 50. Also, in Figure 12, the conductor portion 80B of the shield conductor 80 (see Figure 2) is omitted.

[0092] First, the features related to the first to third inductors L21, L22, and L23 of the second filter 20 will be described. The second inductor L22 is disposed between the first inductor L21 and the third inductor L23. The first to third inductors L21, L22, and L23 are arranged in this order from the side surface 50C of the laminate 50 toward the side surface 50D of the laminate 50.

[0093] The first to third inductors L21, L22, and L23 are all inductors wound around an axis extending in a direction perpendicular to the stacking direction T. Here, a columnar structure formed by connecting multiple through holes in series is called a columnar conductor. The columnar conductor extends in a direction parallel to the stacking direction T. Each of the first to third inductors L21, L22, and L23 includes at least one conductor layer and multiple columnar conductors.

[0094] Each of the first to third inductors L21, L22, and L23 is also a rectangular or nearly rectangular winding. In a rectangular or nearly rectangular winding, the number of turns may be counted as 1 / 4 turns per side of the rectangle when the winding is considered as a rectangle. In this embodiment, the number of turns of each of the first to third inductors L21, L22, and L23 is 3 / 4 turns.

[0095] The first inductor L21 includes a conductor layer 681, two columnar conductors T1a each connected to a portion near a first end 681a of the conductor layer 681, and two columnar conductors T1b each connected to a portion near a second end 681b of the conductor layer 681. The conductor layer 681 extends along a plane intersecting the lamination direction T, i.e., along the pattern formation surface of the dielectric layer 68. The two columnar conductors T1a are configured by connecting through holes 53T1a, 54T1a, 55T1a, 56T1a, 57T1a, 58T1a, 60T1a, 61T1a, 62T1a, 63T1a, 64T1a, 65T1a, 66T1a, and 67T1a in series. The two columnar conductors T1b are configured by connecting through holes 54T1b, 55T1b, 56T1b, 57T1b, 58T1b, 60T1b, 61T1b, 62T1b, 63T1b, 64T1b, 65T1b, 66T1b, and 67T1b in series.

[0096] The first inductor L21 is wound around a first axis perpendicular to the stacking direction T so as to form a first opening surrounded by the conductor layer 681, the two columnar conductors T1a, and the two columnar conductors T1b. The first axis may extend in a direction parallel to the X direction.

[0097] The first inductor L21 further includes a conductor layer 691, and through holes 68T1a and 68T1b electrically connecting the conductor layer 681 and the conductor layer 691. Note that in FIG. 12, the conductor layer 691 and the through holes 68T1a and 68T1b of the first inductor L21 are omitted.

[0098] The second inductor L22 includes a conductor layer 682, two columnar conductors T2a each connected to a portion near a first end 682a of the conductor layer 682, and two columnar conductors T2b each connected to a portion near a second end 682b of the conductor layer 682. The conductor layer 682 extends along a plane intersecting the lamination direction T, i.e., along the pattern formation surface of the dielectric layer 68. The two columnar conductors T2a are configured by connecting through holes 54T2a, 55T2a, 56T2a, 57T2a, 58T2a, 60T2a, 61T2a, 62T2a, 63T2a, 64T2a, 65T2a, 66T2a, and 67T2a in series. The two columnar conductors T2b are configured by connecting through holes 53T2b, 54T2b, 55T2b, 56T2b, 57T2b, 58T2b, 60T2b, 61T2b, 62T2b, 63T2b, 64T2b, 65T2b, 66T2b, and 67T2b in series.

[0099] The second inductor L22 is wound around a second axis perpendicular to the stacking direction T so as to form a second opening surrounded by the conductor layer 682, the two columnar conductors T2a and the two columnar conductors T2b. The second axis may extend in a direction parallel to the X direction.

[0100] The second inductor L22 further includes a conductor layer 692, and through holes 68T2a and 68T2b electrically connecting the conductor layer 682 and the conductor layer 692. Note that in FIG. 12, the conductor layer 692 and the through holes 68T2a and 68T2b of the second inductor L22 are omitted.

[0101] The third inductor L23 includes a conductor layer 683, two columnar conductors T3a each connected to a portion near a first end 683a of the conductor layer 683, and two columnar conductors T3b each connected to a portion near a second end 683b of the conductor layer 683. The conductor layer 683 extends along a plane intersecting the lamination direction T, i.e., along the pattern formation surface of the dielectric layer 68. The two columnar conductors T3a are configured by connecting through holes 57T3a, 58T3a, 60T3a, 61T3a, 62T3a, 63T3a, 64T3a, 65T3a, 66T3a, and 67T3a in series. The two columnar conductors T3b are configured by connecting through holes 54T3b, 55T3b, 56T3b, 57T3b, 58T3b, 60T3b, 61T3b, 62T3b, 63T3b, 64T3b, 65T3b, 66T3b, and 67T3b in series. The third inductor L23 is wound around a third axis perpendicular to the stacking direction T so that a third opening surrounded by the conductor layer 683, the two columnar conductors T3a, and the two columnar conductors T3b is formed. The third axis may extend in a direction parallel to the X direction.

[0102] The third inductor L23 further includes a conductor layer 693, through holes 68T3a and 68T3b electrically connecting the conductor layer 683 and the conductor layer 693, and a columnar conductor T3 connected in series to one of the two columnar conductors T3a. Note that the conductor layer 693, the through holes 68T3a and 68T3b, and the columnar conductor T3 of the third inductor L23 are omitted in Fig. 12. The columnar conductor T3 is formed by connecting through holes 53T3, 54T3, 55T3, and 56T3 in series.

[0103] As described above, in the circuit configuration, the other ends of the first to third inductors L21, L22, and L23 are connected to the ground. The two through holes 53T1a in the first inductor L21, the two through holes 53T2b in the second inductor L22, and the through hole 53T3 in the third inductor L23 are connected to the conductor layer 534. The conductor layer 534 is connected to the electrodes 114, 115, and 116 connected to the ground via the conductor layers 521 and 524 and the through holes 51T5, 51T6, 51T7, 52T5, 52T6, and 52T7. In this embodiment, the interface between the conductor layer 534 and the two through holes 53T1a corresponds to the other end of the first inductor L21. The interface between the conductor layer 534 and the two through holes 53T2b corresponds to the other end of the second inductor L22. The interface between the conductor layer 534 and the through hole 53T3 corresponds to the other end of the third inductor L23.

[0104] Here, the winding direction of the inductor is defined as the direction from one end of the inductor to the other end of the inductor. The one end of the inductor is the end farther from the ground in terms of the circuit configuration, and the other end of the inductor is the end closer to the ground in terms of the circuit configuration. The winding direction of the first inductor L21 is the direction from the two through holes 54T1b to the two columnar conductors T1b, the conductor layer 681, and the two columnar conductors T1a in order to the two through holes 53T1a. The winding direction of the second inductor L22 is the direction from the two through holes 54T2a to the two columnar conductors T2a, the conductor layer 682, and the two columnar conductors T2b in order to the two through holes 53T2b. The winding direction of the third inductor L23 is a direction from the two through holes 54T3b to the through hole 53T3 via the two columnar conductors T3b, the conductor layer 683, the two columnar conductors T3a, and the columnar conductor T3 in this order.

[0105] The first to third inductors L21, L22, and L23 are arranged such that the first opening of the first inductor L21, the second opening of the second inductor L22, and the third opening of the third inductor L23 overlap when viewed from a direction parallel to the X direction. When viewed from the X direction, the winding direction of the third inductor L23 is the same as the winding direction of the first inductor L21. When viewed from the X direction, the winding direction of the second inductor L22 is opposite to the winding directions of the first and third inductors L21 and L23.

[0106] Next, the features related to the first to third inductors L21, L22, and L23 and the shield conductor 80 will be described. As described above, the first end 682a of the conductor layer 682 of the second inductor L22 is closer to the first conductor portion 80E of the shield conductor 80 than the second conductor portion 80F of the shield conductor 80, and the second end 682b of the conductor layer 682 of the second inductor L22 is closer to the second conductor portion 80F of the shield conductor 80 than the first conductor portion 80E of the shield conductor 80. In FIG. 12, an arrow with a symbol D1 indicates the distance between the first end 682a of the conductor layer 682 and the first conductor portion 80E. An arrow with a symbol D2 indicates the distance between the second end 682b of the conductor layer 682 and the second conductor portion 80F. The distance D1 is greater than the distance D2.

[0107] 12, the distance D1 is larger than the distance between the first end 681a of the conductor layer 681 of the first inductor L21 and the first conductor portion 80E, and the distance between the first end 683a of the conductor layer 683 of the third inductor L23 and the first conductor portion 80E. The distance D2 is the same as or approximately the same as the distance between the second end 681b of the conductor layer 681 of the first inductor L21 and the second conductor portion 80F, and the distance between the second end 683b of the conductor layer 683 of the third inductor L23 and the second conductor portion 80F. Thus, the conductor layer 682 is shorter than each of the conductor layers 681 and 683.

[0108] The shapes and arrangement of the conductor layers 691-693 are the same or nearly the same as those of the conductor layers 681-683, except for their positions in the stacking direction T. The above explanation of the intervals D1 and D2 also applies to the conductor layers 691-693. If the conductor layers 681-683 in the above explanation of the intervals D1 and D2 are replaced with the conductor layers 691-693, respectively, the explanation becomes as to the intervals D1 and D2 relating to the conductor layers 691-693.

[0109] The two columnar conductors T1a of the first inductor L21, the two columnar conductors T2a of the second inductor L22, and the two columnar conductors T3a of the third inductor L23 are located closer to the first conductor portion 80E than the second conductor portion 80F. The two columnar conductors T1b of the first inductor L21, the two columnar conductors T2b of the second inductor L22, and the two columnar conductors T3b of the third inductor L23 are located closer to the second conductor portion 80F than the first conductor portion 80E.

[0110] Next, features related to the shield conductor 80 and the ground will be described. The shield conductor 80 is connected to the electrodes 114, 115, and 116 connected to the ground through a plurality of conductors provided in the laminate 50. That is, as described above, the conductor layers 574 and 654 are connected to the second conductor portion 80F and the conductor portion 80C of the shield conductor 80. The conductor layer 654 is connected to the conductor layer 574 through a plurality of through holes. The conductor layer 574 is connected to the conductor layer 532 through a plurality of through holes. The conductor layer 532 is connected to the conductor layer 521 through a plurality of through holes. The conductor layer 521 is connected to the electrode 116 through two through holes 51T7. The conductor layer 521 is also connected to the conductor layer 534 through two through holes 52T7. The conductor layer 534 is connected to the electrode 114 via two through holes 52T5 and two through holes 51T5, and is also connected to the electrode 115 via two through holes 52T6, the conductor layer 524, and two through holes 51T6.

[0111] Moreover, the conductor layers 571, 573, 661, and 673 are directly connected to a first conductor portion 80E of the shield conductor 80. The conductor layers 572 and 602 are directly connected to a second conductor portion 80F of the shield conductor 80. The conductor layers 571, 572, 573, 602, 661, and 673 are connected to the shield conductor 80 and electrodes 114, 115, and 116, which are connected to ground via the above-mentioned multiple conductors.

[0112] The two columnar conductors T1a of the first inductor L21 are electrically connected to the conductor layers 571 and 661. The two columnar conductors T1a are electrically connected to the first conductor portion 80E without passing through the conductor layer 681 and the two columnar conductors T1b of the first inductor L21. The conductor layers 571 and 661 correspond to the "first connecting conductor" of the present invention. That is, the conductor layers 571 and 661 connect the two columnar conductors T1a and the first conductor portion 80E.

[0113] The two columnar conductors T2b of the second inductor L22 are electrically connected to the conductor layers 572 and 602. The two columnar conductors T2b are electrically connected to the second conductor portion 80F without passing through the conductor layer 682 and the two columnar conductors T2a of the second inductor L22. The conductor layers 572 and 602 correspond to the "second connecting conductor" of the present invention. That is, the conductor layers 572 and 602 connect the two columnar conductors T2b and the second conductor portion 80F.

[0114] The two columnar conductors T3a of the third inductor L23 are electrically connected to the conductor layers 573 and 673. The two columnar conductors T3a are electrically connected to the first conductor portion 80E without passing through the conductor layer 683 and the two columnar conductors T3b of the third inductor L23. The conductor layers 573 and 673 correspond to the "third connecting conductor" of the present invention. That is, the conductor layers 573 and 673 connect the two columnar conductors T3a and the first conductor portion 80E.

[0115] Next, a description will be given of features relating to the first signal terminal 3, the first and second inductors L21, L22, and the shield conductor 80. The first signal terminal 3, i.e., the electrode 112, is disposed at a position closer to the first conductor portion 80E than to the second conductor portion 80F of the shield conductor 80. In addition, the electrode 112 is disposed at a position closer to the conductor portion 80C than to the conductor portion 80D of the shield conductor 80.

[0116] The first and second inductors L21, L22 are disposed between the electrode 112 and the side surface 50D. The first inductor L21 is disposed between the electrode 112 and the second inductor L22 in a direction parallel to the X direction. In addition, the conductor layers 571, 661, which are the first connecting conductors, are also disposed between the electrode 112 and the second inductor L22 in a direction parallel to the X direction.

[0117] Next, the features related to the fourth inductor L24 of the second filter 20 will be described. The fourth inductor L24 includes a conductor layer 641, a columnar conductor T4a connected to a portion of the conductor layer 641 near the first end, and a columnar conductor T4b connected to a portion of the conductor layer 641 near the second end. The columnar conductor T4a is configured by connecting through holes 55T4a, 56T4a, 57T4a, 58T4a, 60T4a, 61T4a, 62T4a, and 63T4a in series. The columnar conductor T4b is configured by connecting through holes 55T4b, 56T4b, 57T4b, 58T4b, 60T4b, 61T4b, 62T4b, and 63T4b in series. The fourth inductor L24 is wound around a fourth axis perpendicular to the stacking direction T so as to form a fourth opening surrounded by the conductor layer 641, the columnar conductor T4a, and the columnar conductor T4b. The fourth axis may extend in a direction parallel to the Y direction.

[0118] At least a portion of the fourth inductor L24 exists across a first space surrounded by the conductor layer 681 of the first inductor L21, the two columnar conductors T1a and the two columnar conductors T1b, a second space surrounded by the conductor layer 682 of the second inductor L22, the two columnar conductors T2a and the two columnar conductors T2b, and a third space surrounded by the conductor layer 683 of the third inductor L23, the two columnar conductors T3a and the two columnar conductors T3b.

[0119] Next, the operation and effect of the electronic component 1 according to the present embodiment will be described. In the present embodiment, the two columnar conductors T1a of the first inductor L21, the two columnar conductors T2a of the second inductor L22, and the two columnar conductors T3a of the third inductor L23 are disposed near the first conductor portion 80E of the shield conductor 80. In addition, the two columnar conductors T1b of the first inductor L21, the two columnar conductors T2b of the second inductor L22, and the two columnar conductors T3b of the third inductor L23 are disposed near the second conductor portion 80F of the shield conductor 80. Therefore, in the present embodiment, the first to third inductors L21, L22, and L23 are coupled via the first and second conductor portions 80E and 80F, and as a result, desired characteristics may not be realized.

[0120] In contrast, in this embodiment, the two columnar conductors T1a of the first inductor L21 are connected to the first conductor portion 80E by the conductor layers 571 and 661, and the two columnar conductors T3a of the third inductor L23 are connected to the first conductor portion 80E by the conductor layers 573 and 673. On the other hand, the two columnar conductors T2b of the second inductor L22 are not directly connected to the first conductor portion 80E, but are connected to the second conductor portion 80F by the conductor layers 572 and 602. Therefore, in this embodiment, when viewed from the X direction or the -X direction, the direction of the current flowing through the second inductor L22 is opposite to the direction of the current flowing through each of the first and third inductors L21 and L23. In addition, the second inductor L22 is disposed between the first inductor L21 and the third inductor L23. As a result, according to the present embodiment, it is possible to suppress the coupling between the first inductor L21 and the second inductor L22, and the coupling between the second inductor L22 and the third inductor L23. As a result, according to the present embodiment, it is possible to achieve desired characteristics while suppressing the occurrence of problems caused by the shield conductor 80.

[0121] In the present embodiment, the second inductor L22 is wound in the opposite direction to the first and third inductors L21, L23, which also makes it possible to suppress coupling between the first to third inductors L21, L22, and L23.

[0122] Furthermore, in this embodiment, the distance D1 between the first end 682a of the conductor layer 682 of the second inductor L22 and the first conductor portion 80E is larger than the distance D2 between the second end 682b of the conductor layer 682 and the second conductor portion 80F. As a result, according to this embodiment, the two columnar conductors T2a of the second inductor L22 can be separated from the first conductor portion 80E, and the coupling between the two columnar conductors T2a and the first conductor portion 80E can be weakened.

[0123] In addition, in this embodiment, the second inductor L22 is connected to the ground. In particular, in this embodiment, the two columnar conductors T2b of the second inductor L22 are connected to the second conductor portion 80F by the conductor layers 572 and 602. The two columnar conductors T2b are electrically connected to the second conductor portion 80F without passing through the conductor layer 682 and the two columnar conductors T2a of the second inductor L22. According to this embodiment, the coupling between the second inductor L22 and the shield conductor 80 can be weakened more effectively than in the case where the two columnar conductors T2b are moved away from the second conductor portion 80F.

[0124] In the present embodiment, the electronic component 1 includes a first filter 10 and a second filter 20. The second filter 20 includes a second inductor L22. According to the present embodiment, the coupling between the second inductor L22 and the shield conductor 80 can be weakened, and therefore, the first filter 10 and the second filter 20 can be prevented from being coupled via the second inductor L22 and the shield conductor 80. As a result, the isolation characteristics between the first filter 10 and the second filter 20 can be prevented from being deteriorated.

[0125] In addition, in this embodiment, the first filter 10 is provided between the common terminal 2 and the first signal terminal 3 in terms of the circuit configuration, and the second filter 20 is provided between the common terminal 2 and the second signal terminal 4 in terms of the circuit configuration. The first signal terminal 3, i.e., the electrode 112, is disposed at a position closer to the first conductor portion 80E than the second conductor portion 80F. According to this embodiment, by moving the two columnar conductors T2a away from the first conductor portion 80E, it is possible to suppress the second inductor L22 and the electrode 112 from being coupled via the first conductor portion 80E, and as a result, it is possible to suppress the deterioration of the isolation characteristics between the first signal terminal 3 and the second signal terminal 4.

[0126] Furthermore, in this embodiment, conductor layers 571, 661, which are first connecting conductors, are disposed between the electrode 112 and the second inductor L22 when viewed from the stacking direction T. This also makes it possible in this embodiment to prevent the second inductor L22 and the electrode 112 from being coupled to each other via the first conductor portion 80E.

[0127] Next, the effects of the present embodiment will be described with reference to the results of a simulation. In the simulation, a model of an example, a model of a first comparative example, a model of a second comparative example, and a model of a third comparative example were used. The model of the example is a model of electronic component 1 according to the present embodiment.

[0128] The model of the first comparative example is a model of the electronic component of the first comparative example. In the electronic component of the first comparative example, the posture of the second inductor L22 is opposite to that of the present embodiment. That is, in the first comparative example, the first end 682a of the conductor layer 682 and the first end 692a of the conductor layer 692 are each located closer to the second conductor portion 80F of the shield conductor 80 than the first conductor portion 80E of the shield conductor 80. The second end 682b of the conductor layer 682 and the second end 692b of the conductor layer 692 are each located closer to the first conductor portion 80E of the shield conductor 80 than the second conductor portion 80F of the shield conductor 80. The conductor layers 572 and 602, which are the second connecting conductors and to which the two columnar conductors T2b of the second inductor L22 are connected, are directly connected to the first conductor portion 80E of the shield conductor 80.

[0129] In the first comparative example, the distance between the first end 682a of the conductor layer 682 and the second conductor portion 80F is larger than the distance between the second end 682b of the conductor layer 682 and the first conductor portion 80E. Also, when viewed from the X direction, the winding direction of the second inductor L22 is the same as the winding directions of the first and third inductors L21, L23.

[0130] The rest of the configuration of the electronic component of the first comparative example is the same as the configuration of electronic component 1 according to the present embodiment.

[0131] The model of the second comparative example is a model of the electronic component of the second comparative example. In the electronic component of the second comparative example, the distance D1 between the first end 682a of the conductor layer 682 and the first conductor portion 80E is smaller than that of the present embodiment. In the second comparative example, the distance D1 is the same as the distance between the first end 681a of the conductor layer 681 of the first inductor L21 and the first conductor portion 80E, and the distance between the first end 683a of the conductor layer 683 of the third inductor L23 and the first conductor portion 80E. The other configurations of the electronic component of the second comparative example are the same as the configurations of the electronic component 1 according to the present embodiment.

[0132] The model of the third comparative example is a model of the electronic component of the third comparative example. In the electronic component of the third comparative example, the conductor layers 571 and 661, which are the first connecting conductors and to which the two columnar conductors T1a of the first inductor L21 are connected, are not provided. Therefore, the first connecting conductor does not exist between the electrode 112 and the second inductor L22. The other configurations of the electronic component of the third comparative example are the same as those of the electronic component 1 according to the present embodiment.

[0133] In the simulation, the model of the example was designed so that the pass band of the first filter 10, i.e., the first pass band, was 3.3 to 5.0 GHz, the pass band of the second filter 20, i.e., the second pass band, was 7.7 GHz to 8.2 GHz, and the second inductor L22 formed an attenuation pole that was formed on the low-frequency side of the second pass band and was closest to the second pass band in the pass attenuation characteristics of the second filter 20. In the model of the example, the distance D1 between the first end 682a of the conductor layer 682 of the second inductor L22 and the first conductor portion 80E of the shield conductor 80 was 325 μm.

[0134] Moreover, by changing the structure of the model of the embodiment, first to third comparative models were created. In particular, in the model of the second comparative example, the distance D1 is 100 μm.

[0135] In the simulation, for each of the model of the embodiment and the models of the first to third comparative examples, the pass attenuation characteristics between the common terminal 2 and the first signal terminal 3, the pass attenuation characteristics between the common terminal 2 and the second signal terminal 4, and the frequency characteristics of isolation between the first signal terminal 3 and the second signal terminal 4 were obtained. Note that the pass attenuation characteristics between the common terminal 2 and the first signal terminal 3 substantially represent the pass attenuation characteristics of the first filter 10, and the pass attenuation characteristics between the common terminal 2 and the second signal terminal 4 substantially represent the pass attenuation characteristics of the second filter 20.

[0136] The isolation between the first signal terminal 3 and the second signal terminal 4 is defined as follows. When a high-frequency signal with power P1 is input to the first signal terminal 3, the power of the signal output from the second signal terminal 4 is P2. The isolation I is defined by the following equation (1).

[0137] I = 10 log (P2 / P1) … (1)

[0138] FIG. 13 is a characteristic diagram showing the pass attenuation characteristic of the model of the embodiment. FIG. 14 is a characteristic diagram showing the frequency characteristic of the isolation of the model of the embodiment. In FIG. 13 and FIG. 14, the horizontal axis indicates frequency. In FIG. 13, the vertical axis indicates the amount of attenuation. In FIG. 14, the vertical axis indicates the isolation. In FIG. 13, the curve marked with reference numeral 91 indicates the pass attenuation characteristic between the common terminal 2 and the first signal terminal 3 in the model of the embodiment, that is, the pass attenuation characteristic of the first filter 10. The curve marked with reference numeral 92 indicates the pass attenuation characteristic between the common terminal 2 and the second signal terminal 4 in the model of the embodiment, that is, the pass attenuation characteristic of the second filter 20. In FIG. 14, the curve marked with reference numeral 93 indicates the frequency characteristic of the isolation in the model of the embodiment.

[0139] As shown in Fig. 13, in the pass attenuation characteristic (reference numeral 92) of the second filter 20, the attenuation pole formed on the low-frequency side of the second pass band and closest to the second pass band is formed by the second inductor L22. As can be seen from Fig. 13 and Fig. 14, the absolute value of the isolation in the first pass band and the absolute value of the isolation in the second pass band are sufficiently large.

[0140] Fig. 15 is a characteristic diagram showing the pass attenuation characteristics of the model of the first comparative example. In Fig. 15, the horizontal axis indicates frequency, and the vertical axis indicates attenuation. In Fig. 15, a curve marked with reference numeral 94 indicates the pass attenuation characteristics between the common terminal 2 and the second signal terminal 4 in the model of the first comparative example, that is, the pass attenuation characteristics of the second filter 20. Fig. 15 also shows the pass attenuation characteristics of the second filter 20 in the model of the embodiment (reference numeral 92).

[0141] As shown in FIG. 15, in the model of the first comparative example, the absolute value of the attenuation is not sufficiently large on the low-frequency side of the second passband. In the model of the first comparative example, the winding directions of the first to third inductors L21, L22, and L23 are the same when viewed from the X direction, so that the first inductor L21 and the second inductor L22 are coupled to each other, and the second inductor L22 and the third inductor L23 are coupled to each other. The first to third inductors L21, L22, and L23 are further coupled to each other via the shield conductor 80. For these reasons, in the model of the first comparative example, an attenuation pole cannot be formed on the low-frequency side of the second passband, and as a result, the absolute value of the attenuation cannot be sufficiently large on the low-frequency side of the second passband.

[0142] As can be seen from the results shown in FIG. 15, in this embodiment, as described above, the first and third inductors L21, L23 are connected to the first conductor portion 80E, the second inductor L22 is connected to the second conductor portion 80F, and the winding direction of the second inductor L22 is opposite to the winding directions of the first and third inductors L21, L23, thereby suppressing the coupling of the first to third inductors L21, L22, L23, and as a result, desired characteristics can be realized.

[0143] Fig. 16 is a characteristic diagram showing the frequency characteristics of the isolation of the model of the second comparative example. In Fig. 16, the horizontal axis indicates frequency, and the vertical axis indicates isolation. In Fig. 16, a curve marked with reference numeral 95 indicates the frequency characteristics of the isolation in the model of the second comparative example. Fig. 16 also shows the frequency characteristics of the isolation in the model of the embodiment (reference numeral 93).

[0144] 16, in the model of the second comparative example, the absolute value of the isolation in the second passband is smaller than that of the model of the embodiment. In the model of the second comparative example, the smaller distance D1 strengthens the coupling between the two columnar conductors T2a of the second inductor L22 and the first conductor portion 80E of the shield conductor 80, and as a result, the second inductor L22 and the first signal terminal 3, i.e., the electrode 112, are coupled via the first conductor portion 80E.

[0145] 16, according to the present embodiment, it is possible to suppress deterioration of the isolation characteristics between the first signal terminal 3 and the second signal terminal 4. That is, according to the present embodiment, by moving the two columnar conductors T2a away from the first conductor portion 80E, it is possible to weaken the coupling between the two columnar conductors T2a and the first conductor portion 80E, and as a result, it is possible to weaken the coupling between the second inductor L22 and the shield conductor 80.

[0146] Fig. 17 is a characteristic diagram showing frequency characteristics of isolation of the model of the third comparative example. In Fig. 17, the horizontal axis indicates frequency, and the vertical axis indicates isolation. In Fig. 17, a curve marked with reference numeral 96 indicates isolation in the model of the third comparative example. Fig. 17 also shows isolation in the model of the embodiment (reference numeral 93).

[0147] As shown in Fig. 17, in the model of the third comparative example, the absolute value of isolation in the second passband is smaller than that of the model of the example. As can be seen from the result shown in Fig. 17, according to this embodiment, by providing the first connection conductor (conductor layers 571, 661) between the first signal terminal 3, i.e., the electrode 112, and the second inductor L22, it is possible to suppress coupling between the second inductor L22 and the first signal terminal 3, i.e., the electrode 112, via the first conductor portion 80E.

[0148] The present invention is not limited to the above-described embodiment, and various modifications are possible. The present invention is not limited to the electronic component having the circuit configuration shown in Fig. 1, and can be applied to electronic components having various circuit configurations as long as they satisfy the requirements of the claims.

[0149] Moreover, the number and positions of the conductor layers included in each of the first to third connecting conductors are not limited to the examples shown in the embodiment, and are arbitrary. For example, each of the first to third connecting conductors may include a first conductor layer and a second conductor layer arranged at a position different from the first conductor layer in the stacking direction T. The first conductor layers of the first to third connecting conductors may be arranged at the same position or at different positions in the stacking direction T. Similarly, the second conductor layers of the first to third connecting conductors may be arranged at the same position or at different positions in the stacking direction T.

[0150] As described above, the multilayer electronic component of the present invention includes a laminate including a plurality of laminated dielectric layers, a first inductor, a second inductor, and a third inductor provided in the laminate, and a shield conductor made of a conductor and integrated with the laminate. The laminate has a first surface and a second surface located at both ends in the stacking direction of the plurality of dielectric layers, and a first side surface, a second side surface, a third side surface, and a fourth side surface connecting the first surface and the second surface. The first side surface and the second side surface face in opposite directions to each other. The third side surface and the fourth side surface face in opposite directions to each other. The shield conductor includes a first conductor portion provided on the first side surface and a second conductor portion provided on the second side surface.

[0151] The second inductor is disposed between the first inductor and the third inductor. Each of the first inductor, the second inductor, and the third inductor includes a conductor layer extending along a plane intersecting the stacking direction and having a first end and a second end located at both ends in the longitudinal direction, a first columnar conductor extending in a direction parallel to the stacking direction and connected to a portion near the first end of the conductor layer, and a second columnar conductor extending in a direction parallel to the stacking direction and connected to a portion near the second end of the conductor layer. The first end of the conductor layer is located closer to the first conductor portion than the second conductor portion. The second end of the conductor layer is located closer to the second conductor portion than the first conductor portion.

[0152] The multilayer electronic component of the present invention further includes a first connecting conductor connecting the first columnar conductor and the first conductor portion of the first inductor, a second connecting conductor connecting the second columnar conductor and the second conductor portion of the second inductor, and a third connecting conductor connecting the first columnar conductor and the first conductor portion of the third inductor.

[0153] The multilayer electronic component of the present invention may further include a first terminal and a second terminal provided on the first surface of the laminate, and a first circuit provided between the first terminal and the second terminal in the circuit configuration. The first circuit may include a first inductor, a second inductor, and a third inductor. The multilayer electronic component of the present invention may further include a third terminal provided on the first surface of the laminate, and a second circuit provided between the first terminal and the third terminal in the circuit configuration. The third terminal may be located closer to the first conductor portion than the second conductor portion. The second circuit may be configured to pass signals of a frequency within a first pass band. The first circuit may be configured to pass signals of a frequency within a second pass band higher than the first pass band. The first circuit may also be configured to pass signals within a predetermined pass band. In this case, the second inductor may form an attenuation pole that is formed on the lower frequency side of a predetermined pass band and is closest to the predetermined pass band in the pass attenuation characteristics of the first circuit.

[0154] In addition, in the multilayer electronic component of the present invention, the distance between the first end and the first conductor portion of the conductor layer of the second inductor may be larger than the distance between the first end and the first conductor portion of the conductor layer of each of the first inductor and the third inductor.

[0155] In the multilayer electronic component of the present invention, the conductor layer of the second inductor may be shorter than the conductor layers of the first inductor and the third inductor.

[0156] The multilayer electronic component of the present invention may further include a parallel resonant circuit including a fourth inductor and a capacitor provided in the laminate, the parallel resonant circuit being provided on a path connecting a node between one end of the first inductor and one end of the second inductor in the circuit configuration and one end of the third inductor. At least a part of the fourth inductor may be present across the conductor layer of the first inductor, the first opening surrounded by the first and second columnar conductors, the conductor layer of the second inductor, the second opening surrounded by the first and second columnar conductors, and the conductor layer of the third inductor, the first and second columnar conductors.

[0157] 1... multilayer electronic component, 2... common terminal, 3... first signal terminal, 4... second signal terminal, 10... first filter, 20... second filter, 21... parallel resonant circuit, 50... laminate, 50A... first surface, 50B... second surface, 50C to 50F... side surface, 80... shield conductor, 80B to 80D... conductor portion, 80E... first conductor portion, 80F... second conductor portion, 111 ~116...electrodes, 681~683, 691~693...conductor layers for inductors, T1a, T1b, T2a, T2b, T3, T3a, T3b...columnar conductors, C11~C13, C21~C28...capacitors, L11~L13...inductors, L21...first inductor, L22...second inductor, L23...third inductor, L24...fourth inductor.

Claims

1. a laminate including a plurality of dielectric layers stacked together; a first inductor, a second inductor and a third inductor provided within the laminate; a shield conductor made of a conductor and integrated with the laminate, the laminate has a first surface and a second surface located at both ends in a lamination direction of the plurality of dielectric layers, and a first side surface, a second side surface, a third side surface, and a fourth side surface connecting the first surface and the second surface, the first side and the second side face opposite each other; the third side and the fourth side face opposite each other; the shield conductor includes a first conductor portion provided on the first side surface and a second conductor portion provided on the second side surface; the second inductor is disposed between the first inductor and the third inductor; Each of the first inductor, the second inductor and the third inductor includes a conductor layer extending along a plane intersecting the stacking direction and having a first end and a second end located at both ends in a longitudinal direction thereof, a first columnar conductor extending in a direction parallel to the stacking direction and connected to a portion of the conductor layer in the vicinity of the first end, and a second columnar conductor extending in a direction parallel to the stacking direction and connected to a portion of the conductor layer in the vicinity of the second end, the first end of the conductor layer is closer to the first conductor portion than to the second conductor portion; the second end of the conductor layer is closer to the second conductor portion than to the first conductor portion; the multilayer electronic component further includes a first connecting conductor that connects the first columnar conductor and the first conductor portion of the first inductor; a second connecting conductor connecting the second columnar conductor and the second conductor portion of the second inductor; a third connecting conductor connecting the first columnar conductor and the first conductor portion of the third inductor,

2. a first terminal and a second terminal provided on the first surface of the laminate; a first circuit provided between the first terminal and the second terminal in a circuit configuration; 2. The multilayer electronic component according to claim 1, wherein the first circuit includes the first inductor, the second inductor, and the third inductor.

3. a third terminal provided on the first surface of the laminate; a second circuit provided between the first terminal and the third terminal in terms of a circuit configuration; 3. The multilayer electronic component according to claim 2, wherein the third terminal is disposed at a position closer to the first conductor portion than to the second conductor portion.

4. the second circuit is configured to pass signals at frequencies within a first passband; 4. The multilayer electronic component according to claim 3, wherein the first circuit is configured to pass signals having frequencies within a second passband that is higher than the first passband.

5. the first circuit is configured to pass signals within a predetermined passband; 4. The multilayer electronic component according to claim 3, wherein the second inductor forms an attenuation pole that is formed on the low-frequency side of the predetermined pass band and is closest to the predetermined pass band in the pass attenuation characteristics of the first circuit.

6. 2. The multilayer electronic component according to claim 1, wherein a distance between the first end of the conductor layer of the second inductor and the first conductor portion is larger than a distance between the first end of the conductor layer of each of the first inductor and the first conductor portion of the third inductor.

7. 2. The multilayer electronic component according to claim 1, wherein the conductor layer of the second inductor is shorter than the conductor layers of the first inductor and the third inductor.

8. 8. The multilayer electronic component according to claim 1, further comprising a parallel resonant circuit provided on a path connecting a node between one end of the first inductor and one end of the second inductor and one end of the third inductor in a circuit configuration, the parallel resonant circuit including a fourth inductor and a capacitor provided within the laminate.

9. 9. The multilayer electronic component according to claim 8, wherein at least a portion of the fourth inductor is present across the conductor layer of the first inductor, a first opening surrounded by the first columnar conductor and the second columnar conductor, the conductor layer of the second inductor, a second opening surrounded by the first columnar conductor and the second columnar conductor, and a third opening surrounded by the conductor layer of the third inductor, the first columnar conductor and the second columnar conductor.

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