Semiconductor device, electronic apparatus, diamond wafer, and manufacturing method of semiconductor device

Abstract

To improve performance of a semiconductor device that includes a resistance element which has a diamond having conductive type impurities introduced.SOLUTION: A diamond substrate is prepared (S101). Next, an upper surface of the diamond substrate is polished (S102). Then, polishing defects that are formed by polishing the upper surface of the diamond substrate are removed (S103). Then, the upper surface of the diamond substrate is cleaned (S104). Next, a diamond having conductive type impurities introduced is formed on the upper surface of the diamond substrate (S105). Then, in a step of forming the diamond having conductive type impurities introduced, the temperature is feedback-controlled, and the diamond having conductive type impurities introduced is formed by a plasma CVD method while controlling an introduction amount of conductive type impurities.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor device, an electronic device, a diamond wafer, and a manufacturing technique for the semiconductor device, and relates to a technique that is effective when applied to, for example, a semiconductor device including a resistance element having diamond doped with conductive impurities. [Background technology]

[0002] Japanese Patent Application Laid-Open No. 2018-12611 (Patent Document 1) describes a technology for providing impurity-doped diamond with low electrical resistance. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-12611 A Summary of the Invention [Problem to be solved by the invention]

[0004] For example, diamond has the highest thermal conductivity of any material (four times that of SiC and 16 times that of GaN) and the highest dielectric breakdown field strength of any semiconductor material (three times that of SiC and 10 times that of GaN). Furthermore, the hole mobility and hole saturation velocity in diamond are comparable to those in silicon.

[0005] Therefore, diamond is expected to improve the performance of semiconductor devices. In this regard, research is being conducted to configure the field effect transistors included in semiconductor devices from diamond transistors. Meanwhile, components of semiconductor devices include not only field effect transistors but also resistor elements. For this reason, research is also being conducted to realize resistor elements having diamond doped with conductive impurities.

[0006] However, with current technology, it is difficult to precisely control the concentration of conductive impurities introduced into diamond, which hinders the progress of practical device applications. For this reason, there is a demand for substrates with controlled concentrations of conductive impurities. [Means for solving the problem]

[0007] A semiconductor device according to one embodiment includes a resistive element having a diamond doped with a conductive impurity, the resistive element having a resistance value within a range of ±50% of a reference value.

[0008] A semiconductor device according to one embodiment includes a resistor element having diamond doped with conductive impurities, the concentration of the conductive impurities being within a range of ±65% of a reference value.

[0009] A semiconductor device according to an embodiment includes a voltage amplifier having a load resistance element and a transistor connected in series with the load resistance element. The load resistance element has diamond doped with a conductive impurity. The transistor is a diamond transistor.

[0010] A semiconductor device according to an embodiment of the present invention includes a resistor element formed on a diamond substrate, and a transistor formed on the diamond substrate. The resistor element includes diamond doped with a conductive impurity. The transistor is a diamond transistor.

[0011] In one embodiment, the diamond wafer has a plurality of chip regions, each of which is formed with at least a resistor element having diamond doped with conductive impurities and a transistor formed of a diamond transistor.

[0012] An electronic device in one embodiment includes the above-described semiconductor device as a component.

[0013] A method for manufacturing a semiconductor device in one embodiment includes the steps of: (a) preparing a diamond substrate, (b) polishing the top surface of the diamond substrate, (c) removing polishing defects, (d) cleaning the top surface of the diamond substrate, and (e) forming a diamond doped with conductive impurities on the top surface of the diamond substrate. In step (e), a diamond doped with conductive impurities is formed by a plasma CVD method while feedback controlling the temperature and controlling the amount of doped conductive impurities. Effect of the Invention

[0014] According to one embodiment, it is possible to improve the performance of a semiconductor device including a resistor element having diamond doped with conductive impurities. [Brief description of the drawings]

[0015] [Figure 1] FIG. 2 is a circuit diagram of a voltage amplifier. [Diagram 2] 1 is a flowchart showing a process for realizing a basic concept. [Diagram 3] FIG. 2 illustrates a resistive element according to an embodiment. [Figure 4] 1 is a graph showing the relationship between boron concentration and resistivity in a p-type diamond produced by a production method in an embodiment. [Diagram 5] FIG. 13 is a diagram showing the results of a circuit simulation. [Figure 6] FIG. 1 is a diagram illustrating a configuration of a semiconductor device. [Figure 7] FIG. 1 shows a diamond wafer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] In all the drawings for explaining the embodiments, the same members are generally designated by the same reference numerals, and the repeated explanations thereof will be omitted. In addition, hatching may be applied even to plan views in order to make the drawings easier to understand.

[0017] <The usefulness of diamond as a semiconductor material> For example, in the fields of future mobile communications, satellite communications, or ultra-small radars, semiconductor devices capable of high-output and high-frequency transmission are required. In this regard, semiconductor materials such as silicon (Si) and gallium arsenide (GaAs) reach their limit in output density at frequencies of several GHz or higher. For this reason, the use of wide-bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN) and diamond in semiconductor devices is being considered. In particular, diamond has the highest thermal conductivity of any material (four times that of SiC, 16 times that of GaN) and the highest dielectric breakdown field strength of any semiconductor material (three times that of SiC, 10 times that of GaN). Furthermore, the hole mobility and hole saturation velocity in diamond are equivalent to the electron mobility and electron saturation velocity in silicon.

[0018] Diamond has excellent heat dissipation properties due to its high thermal conductivity. Therefore, by using diamond in a semiconductor device, heat generation in the semiconductor device can be suppressed and the semiconductor device can be expected to operate at high temperatures. In addition, the high dielectric breakdown field strength of diamond makes the semiconductor device less likely to be destroyed even when a high voltage is applied. For this reason, semiconductor devices using diamond are suitable for high-power applications. Furthermore, the high carrier mobility of diamond suggests that diamond has great potential as a semiconductor device for high-frequency applications.

[0019] For these reasons, diamond as a semiconductor material is considered to be promising for realizing next-generation semiconductor devices capable of high-output, high-frequency operation.

[0020] <Necessity of resistive elements> As mentioned above, diamond has very excellent physical properties. Therefore, there are high expectations for semiconductor devices using diamond. For example, if the performance of a voltage amplifier, which is the basis of electronic or electric circuits, can be improved by using diamond, the performance of semiconductor devices for a wide range of applications can be improved. Therefore, it is important to realize a voltage amplifier with excellent performance using diamond.

[0021] FIG. 1 is a circuit diagram of a voltage amplifier 10. In particular, FIG. 1 illustrates a common-source circuit, which is a representative example of a voltage amplifier circuit. As shown in FIG. 1, the voltage amplifier 10 has a load resistance element 1 and a field effect transistor 2. This field effect transistor 2 is connected in series with the load resistance element 1. The field effect transistor 2 also has a gate G, a source S, and a drain D. The drain D is connected to the load resistance element 1. An input voltage is input between the source S and the gate G. Meanwhile, an output voltage is output from the connection node between the drain D and the load resistance element 1. Here, the voltage and current are each composed of a DC component and a signal component (AC component). Specifically, in FIG. 1, the DC component (input voltage V in , direct current I D , output voltage V out ) and the signal component (input voltage v in , alternating current i d , output voltage v out ) are listed separately.

[0022] In this manner, the voltage amplifier 10 is constructed.

[0023] In the voltage amplifier 10, an input voltage input between the gate G and the source S is amplified and output as an output voltage from the connection node between the drain D and the load resistance element 1.

[0024] Here, the amplification factor (voltage gain) of the voltage amplifier 10 shown in FIG. v =v out / v in =-g m R LIt can be represented by. Note that "g" m " represents the mutual conductance. Also, "R" L " represents the resistance value of the load resistance element 1. Therefore, in order to improve the amplification factor, the mutual conductance or the resistance value of the load resistance element 1 may be increased.

[0025] The voltage amplifier is composed of a load resistance element and a field effect transistor. Therefore, in order to realize a voltage amplifier using diamond, not only the field effect transistor needs to be composed of diamond transistors, but also the load resistance element needs to be composed of diamond. In particular, since the load resistance element has conductivity, the load resistance element needs to be composed of diamond into which a conductive type impurity is introduced.

[0026] Therefore, in the present embodiment, attention is paid to the resistance element typified by the load resistance element of the voltage amplifier. In particular, since the resistance element needs to have conductivity, in the present embodiment, attention is paid to configuring the resistance element from diamond into which a conductive type impurity is introduced.

[0027] <Difficulty in fabricating n-type diamond> As described above, diamond is a wide bandgap semiconductor material. It is considered that n-type diamond can be fabricated by introducing an n-type impurity called a donor into diamond. Specifically, it is considered that n-type diamond can be realized by supplying electrons from the donor level of the donor to the conduction band of diamond.

[0028] Here, nitrogen can be cited as a donor. In diamond, the donor level of nitrogen does not exist near the conduction band but exists at a "deep level" far from the conduction band. Specifically, the donor level of nitrogen exists at an energy position 1.7 eV lower than the conduction band of diamond. This means that in diamond, the activation energy for exciting electrons from the donor level of nitrogen to the conduction band of diamond becomes large.

[0029] Therefore, even if nitrogen, which is a donor, is introduced into diamond, it is difficult to increase the electrons supplied to the conduction band. As a result, it is difficult to make diamond with nitrogen introduced function as n-type diamond.

[0030] On the other hand, it is considered that p-type diamond can be produced by introducing p-type impurities called acceptors into diamond. Specifically, it is considered that p-type diamond can be realized by exciting electrons from the valence band of diamond to the acceptor level of the acceptor, thereby generating holes in the valence band of diamond.

[0031] Here, boron can be cited as an acceptor. The acceptor level of this boron exists near the valence band of diamond. Specifically, boron, which is an acceptor, forms an acceptor level at an energy position 0.37 eV higher than the valence band of diamond. That is, in diamond, the acceptor level of boron does not constitute a "deep level" like the donor level of nitrogen. From this, the activation energy for exciting electrons from the valence band of diamond to the acceptor level of boron is not so large. As a result, producing p-type diamond in diamond is easier to achieve than producing n-type diamond. Therefore, in this embodiment, a resistive element using p-type diamond will be mainly described.

[0032] <Current status of p-type diamond> For example, p-type diamond is used in diamond transistors. Specifically, p-type diamond is used as a p-type contact layer interposed between the source electrode and the diamond layer or between the drain electrode and the diamond layer, respectively. That is, the p-type contact layer has a function of forming an ohmic contact between the source electrode and the diamond layer or an ohmic contact between the drain electrode and the diamond layer. From this, the p-type contact layer is required to have a low resistance value. Therefore, p-type diamond with p-type impurities introduced at a high concentration is used for the p-type contact layer.

[0033] This p-type diamond is formed, for example, by using the hot filament CVD (Chemical Vapor Deposition) method. The hot filament CVD method is the following method. First, electricity is passed through a metal filament such as tungsten (W) or tantalum (Ta). Then, it is heated to 2000°C or higher and 2200°C or lower. This causes the reaction gas and carrier gas to decompose with thermal energy, and diamond is grown on the substrate.

[0034] In the hot filament CVD method, the substrate is placed a few mm away from the metal filament. The growth rate of diamond is about 0.5 μm / h to 5 μm / h. The hot filament CVD method has the advantage that it can be used for mass production. On the other hand, the hot filament CVD method has the disadvantage that it is difficult to accurately control the impurity concentration of the p-type impurity introduced into the diamond.

[0035] In this regard, the above-mentioned p-type contact layer only needs to realize ohmic contact. In other words, the p-type contact layer does not need to be finely controlled in the concentration of the p-type impurity introduced. In other words, the p-type contact layer only needs to have low resistance. Therefore, there is no problem in forming the p-type diamond constituting the p-type contact layer by the hot filament CVD method. In this way, the current p-type diamond is not used in applications that require fine control of the concentration of the p-type impurity introduced. This is because the hot filament CVD method for manufacturing p-type diamond is not suitable for accurately controlling the impurity concentration of the p-type impurity. Therefore, the use of the current p-type diamond is limited to applications that do not require fine control of the impurity concentration, such as the p-type contact layer.

[0036] <The need for precise control of impurity concentrations> Based on the above, in order to expand the applications of p-type diamond, it is necessary to establish a method for precisely controlling the concentration of p-type impurities introduced into diamond.

[0037] A more specific explanation will be given. For example, the voltage amplifier 10 shown in Fig. 1 is used in an analog circuit. In an analog circuit, it is important to know "how many times" the input signal is amplified. In other words, the voltage amplifier 10 constituting the analog circuit is required to have an amplification factor within an allowable range with respect to a reference value. This is because, in an analog circuit including the voltage amplifier 10, if the amplification factor does not fall within an allowable range with respect to a reference value, for example, there is a risk that the analog circuit will not operate normally.

[0038] In this respect, analog circuits differ from digital circuits. For example, in digital circuits, there are no operational problems if the signal fluctuation (amplitude fluctuation) does not exceed the threshold value that determines the boundary between "1" and "0". In other words, digital circuits have a wide tolerance for deviations from a reference value. In contrast, analog circuits have a narrow tolerance for deviations from a reference value. As a result, even a slight deviation from the reference value in an analog circuit makes it more likely to cause abnormal operation, such as malfunction or failure. For this reason, the circuit elements used in analog circuits need to be manufactured so that their actual measured values ​​have small deviations from the reference value.

[0039] Therefore, for example, the amplification factor of the voltage amplifier 10 included in the analog circuit must be within an allowable range with respect to the reference value. Here, the amplification factor of the voltage amplifier 10 is proportional to the resistance value of the load resistance element 1. From this, in order for the amplification factor to be within an allowable range with respect to the reference value, the resistance value of the load resistance element 1 must be within an allowable range with respect to the reference value. And, when the load resistance element 1 is made of p-type diamond, the resistance value of the p-type diamond depends on the impurity concentration of the p-type impurity introduced into the diamond. As a result, in order for the resistance value of the load resistance element 1 to be within an allowable range with respect to the reference value, the concentration of the p-type impurity must be within an allowable range with respect to the reference value.

[0040] From the above, in order to make p-type diamond usable as a resistance element, it is necessary to be able to precisely control the concentration of p-type impurities so that the concentration of p-type impurities falls within an allowable range relative to a reference value. In this regard, the current method for manufacturing p-type diamond does not allow precise control of the concentration of p-type impurities. Therefore, in order to expand the use of p-type diamond to resistance elements, it is desirable to establish a method for precisely controlling the concentration of p-type impurities introduced into diamond.

[0041] Therefore, in this embodiment, in order to realize a resistance element using p-type diamond, the concentration of p-type impurities introduced into diamond is precisely controlled. The technical idea of ​​this embodiment that uses this technique will be described below.

[0042] <Basic Concept of the Embodiment> The basic idea of ​​this embodiment is to provide a method for precisely controlling the impurity concentration of diamond into which conductive impurities have been introduced, by using the steps shown below.

[0043] Specifically, FIG. 2 is a flow chart showing a process flow for realizing the basic concept. In FIG. 2, in the basic concept, first, a diamond substrate is prepared (S101). Next, the top surface of the diamond substrate is polished (S102). After that, polishing defects formed by polishing the top surface of the diamond substrate are removed (S103). Then, the top surface of the diamond substrate is cleaned (S104). Next, a diamond doped with conductive impurities is formed on the top surface of the diamond substrate (S105). At this time, in the process of forming the diamond doped with conductive impurities, the temperature is feedback-controlled and the amount of the conductive impurities introduced is controlled, and the diamond doped with conductive impurities is formed by the plasma CVD method.

[0044] According to this basic concept, the impurity concentration of the diamond doped with conductive impurities can be precisely controlled so that the concentration of the conductive impurities falls within an allowable range relative to a reference value. As a result, according to this basic concept, the applications of the diamond doped with conductive impurities can be expanded.

[0045] Hereinafter, embodiments that embody the above-mentioned basic concept will be described.

[0046] <Embodiment> <<Configuration of resistor element>> FIG. 3 illustrates a resistive element 100 in accordance with an embodiment.

[0047] 3, an undoped layer 102 is provided on a nitrogen-doped diamond substrate 101. For example, the upper surface of the undoped layer 102 is a (001) plane.

[0048] Here, the diamond substrate 101 with nitrogen introduced therein is used, but is not limited thereto, and may be configured to manufacture the resistance element 100 on a free-standing film made of the non-doped layer 102. Here, in this specification, the diamond substrate 101 and the non-doped layer 102 may be collectively referred to as the diamond substrate. In addition, in this specification, even if the diamond substrate 101 is not present and the non-doped layer 102 exists as a free-standing film, it may be referred to as the diamond substrate. In other words, the term "diamond substrate" in this specification is used to include the diamond substrate 101 alone, the combination of the diamond substrate 101 and the non-doped layer 102, and the non-doped layer 102 alone.

[0049] The non-doped layer 102 has a (001) surface. <110> The off-angle may be set to a few degrees (for example, 3 degrees) in the direction.

[0050] Here, the non-doped layer 102 in this specification is a diamond layer in which the nitrogen impurity concentration is 100 nm, which is the lower limit of detection by a measuring device using SIMS (Secondary Ion Mass Spectrometry). 16 / cm 3 Diamond layer having a thickness of less than 100 nm.

[0051] 3, a p-type diamond 103 is formed on the non-doped layer 102. The p-type diamond 103 is made of diamond doped with boron as a p-type impurity, for example. This p-type diamond 103 is a component of the resistor element 100.

[0052] The resistor element 100 has an electrode 104 and an electrode 105 formed so as to be in contact with the p-type diamond 103. The electrode material of each of the electrodes 104 and 105 is made of, for example, gold (Au), ruthenium (Ru), aluminum (Al), titanium (Ti), molybdenum (Mo), copper (Cu), chromium (Cr), lead (Pb), zinc (Zn), platinum (Pt), or a combination thereof (such as Ti / Mo / Au).

[0053] In this manner, the resistance element 100 in the embodied embodiment is configured.

[0054] <<Manufacturing method of resistor element>> In the embodiment, a method for forming a resistor element 100 made of diamond doped with p-type impurities based on the basic concept will be described.

[0055] The steps illustrated in the flow chart of FIG. 2 will now be described in detail.

[0056] 1. Step of preparing a diamond substrate (S101) The prepared diamond substrate has, for example, a (001) surface on its top surface. This is because, from the viewpoint of improving flatness, the (001) surface is superior for growing a high-quality film on the top surface of the diamond substrate by CVD. Furthermore, from the viewpoint of forming a high-quality film by CVD, the diamond substrate may have an off-angle of several degrees. In the embodiment, the (001) surface is <110> The direction is given an off angle of 3 degrees.

[0057] By providing an off-angle, the number of steps can be increased. As a result, the growth species flowing on the surface can easily reach the edge of the steps. This promotes step-flow growth and suppresses the occurrence of abnormal growth.

[0058] 2. Polishing process (S102) After preparing the diamond substrate, the upper surface of the diamond substrate is polished so that the surface roughness of the upper surface is 1 nm or less. This makes it easier to uniformize the effect of plasma on the upper surface of the diamond substrate. As a result, it is possible to suppress the variation in the amount of p-type impurity introduced over the entire upper surface of the diamond substrate. For example, chemical mechanical polishing (CMP) can be used as a polishing method.

[0059] 3. Polishing defect removal process (S103) When the top surface of the diamond substrate is polished, polishing defects are formed on the top surface. Therefore, the polishing defects are removed, for example, by ion beam etching (IBE). In this way, the polishing defects are removed before forming p-type diamond on the top surface of the diamond substrate. This makes it possible to reduce the change in resistance value caused by the polishing defects.

[0060] 4. Cleaning process (S104) After carrying out the above-mentioned polishing defect removal process, the top surface of the diamond substrate is cleaned. This cleaning process is carried out, for example, by cleaning with strong acid in a clean room to remove organic and inorganic substances adhering to the top surface of the diamond substrate. This makes it possible to suppress abnormal growth occurring at various points on the diamond substrate when forming p-type diamond. As a result, it is possible to suppress the variation in the amount of p-type impurity introduced over the entire top surface of the diamond substrate.

[0061] 5. p-type diamond formation process (S105) Next, p-type diamond 103 is formed on the top surface of the diamond substrate. The p-type diamond 103 is formed by microwave plasma CVD, not by hot filament CVD. This allows for fine control of conditions. This allows for fine control of the impurity concentration of diamond doped with p-type impurities. In other words, by using microwave plasma CVD, it is possible to overcome the disadvantage of hot filament CVD, that is, the difficulty in accurately controlling the impurity concentration of p-type impurities. In the embodiment, boron is used as the p-type impurity doped in p-type diamond 103.

[0062] The above-mentioned detailed condition control can include, for example, (1) temperature control and (2) impurity introduction amount control, which are described below.

[0063] Temperature control can be achieved, for example, by carrying out the following steps. First, the temperature during the formation of the p-type diamond 103 is measured using a radiation thermometer. Then, the temperature is feedback-controlled in real time so that it falls within a range of ±5% from the target temperature for formation. This type of temperature control can reduce temperature variations during the formation of the p-type diamond 103.

[0064] The amount of impurity introduced can be controlled by, for example, carrying out the following steps: A high-quality boron source gas is introduced while being controlled by a high-precision mass flow meter. This makes it possible to reduce the variation in the concentration of boron introduced.

[0065] In the embodiment, for example, trimethylboron (B(CH3)3) is used as a raw material gas for introducing boron. The ratio of boron (B) / carbon (C) in the synthesis gas is adjusted to, for example, about 1.5% to 1.6%. However, the adjustment conditions vary depending on the synthesis environment, such as the apparatus used and temperature, and the above adjustment conditions are merely an example.

[0066] Thus, in the embodiment, the microwave plasma CVD method is used in the p-type diamond formation process, and the temperature and the amount of impurity introduced are controlled. As a result, the temperature variation and the concentration of boron introduced during the formation of the p-type diamond 103 can be reduced. This allows the impurity concentration of the diamond into which boron has been introduced to be finely controlled. For example, the concentration of boron can be controlled to be within an allowable range relative to a reference value.

[0067] In the embodiment, a test region where only p-type diamond is formed is provided on the diamond substrate. This allows confirmation in advance of whether the p-type diamond 103 actually has a resistance value within an allowable range with respect to a reference value before manufacturing the semiconductor device. Therefore, when the resistance value of the p-type diamond 103 exceeds the allowable range, the subsequent manufacturing of unnecessary semiconductor devices can be suppressed. Therefore, the manufacturing of defective products can be prevented. As a result, the manufacturing yield of semiconductor devices can be improved.

[0068] <<Characteristics of resistor elements>> The resistor element 100 manufactured as described above has a p-type diamond 103 doped with boron. According to the embodiment, the impurity concentration of the diamond doped with boron can be precisely controlled. As a result, in the resistor element 100 having the p-type diamond 103 doped with boron, the boron concentration can be set to a concentration within an allowable range with respect to a reference value.

[0069] For example, by adopting the manufacturing method of the resistance element 100 in the embodiment, the concentration of boron becomes a concentration of 20% or more and 200% or less of the reference value. Here, the percentage expression of the reference value is calculated by, for example, "100×B / A" when the reference value is "A" and the target concentration is "B". As a specific example, when the reference value A is "1×10 20 (1 / cm 3 ) and target concentration B is "2.0 × 10 19 (1 / cm 3 )" then the target concentration B is "100 × 2.0 × 10 19 / 1×10 20 =20%". Also, the reference value A can be expressed as "1 x 10 20 (1 / cm 3 ) and the target concentration C is 2.0 × 10 20 (1 / cm 3 )" then the target concentration C is "100 × 2.0 × 10 20 / 1×10 20 =200%".

[0070] The boron concentration can be controlled by adjusting the amount of boron introduced and the conditions for forming (synthesizing) the p-type diamond 103. Therefore, for example, the boron concentration can be set to 30% or more and 150% or less of the reference value. Furthermore, by making fine adjustments, the boron concentration can be set to 50% or more and 110% or less of the reference value.

[0071] The resistance value of the resistor element 100 having the p-type diamond 103 doped with boron depends on the concentration of boron. Therefore, the resistance value of the resistor element 100 manufactured in the embodiment can be specified based on the relationship with the concentration of boron. Figure 4 is a graph showing the relationship between the concentration of boron and the resistivity in the p-type diamond 103 manufactured by the manufacturing method in the embodiment.

[0072] 4, as the concentration of boron increases, the resistivity of the p-type diamond 103 decreases. Specifically, according to the research and investigation of the present inventor, when x is the boron concentration and y is the resistivity, y=10 43.756 x-2.201 The relationship is 5×10 18 ≦x≦1×10 21 It is known that this holds true within the range.

[0073] As described above, according to the embodiment, the boron concentration can be set to a concentration that falls within an allowable range with respect to the reference value. As a result, the resistance value of the resistor element 100, which has a relationship with the boron concentration, can also be set to a resistance value that falls within an allowable range with respect to the reference value. For example, by adopting the manufacturing method of the resistor element 100 in the embodiment, the resistance value of the resistor element can be set to 50% or more and 900% or less with respect to the reference value. Here, the percentage expression with respect to the reference value can be calculated by, for example, "100×B / A" when the reference value is "A" and the target concentration is "B". As a specific example, when the reference value A is "5.45×10 -1 (Ωcm) and the target concentration B is 2.73×10 -1 (Ωcm)”, the target concentration B is 100×5.45×10 -1 / 2.73×10 -1 =50%". Also, the reference value A can be expressed as "5.45 × 10 -1 (Ωcm) and the target concentration C is 4.91×10 0 (Ωcm)”, the target concentration C is 100×4.91×10 0 / 5.45×10 -1 =900%".

[0074] By adjusting the amount of boron to be introduced and the conditions for forming (synthesizing) the p-type diamond 103, the resistance value of the resistor element 100 can be set to 80% or more and 400% or less of the reference value. Furthermore, by making fine adjustments, the resistance value of the resistor element 100 can be set to 90% or more and 200% or less of the reference value.

[0075] In this way, the resistance element 100 in the embodiment has a resistance value that is small in deviation from the reference value. And the gain of the voltage amplifier is proportional to the resistance value of the resistance element. Therefore, by using this resistance element 100 in a voltage amplifier, an gain that is small in deviation from the reference value can be obtained. In other words, by using the resistance element 100 having the p-type diamond 103 with the boron concentration precisely controlled in the voltage amplifier, the voltage amplifier has an gain close to the reference value.

[0076] For example, by using the resistance element 100 manufactured by the manufacturing method in the embodiment as a component of a voltage amplifier, the amplification factor of the voltage amplifier can be set to 0.1 to 10 times the reference value. And by adjusting the manufacturing conditions of the p-type diamond 103 constituting the resistance element 100, the amplification factor of the voltage amplifier using this resistance element 100 can be set to 0.2 to 5 times the reference value. Furthermore, by making fine adjustments, the amplification factor of the voltage amplifier can be set to 0.5 to 2 times the reference value. In this way, according to the embodiment, a voltage amplifier having an amplification factor with a small deviation from the reference value can be realized.

[0077] From the above, there is a relationship between the concentration of boron, the resistance value, and the amplification factor. Next, a procedure for determining the amplification factor of a voltage amplifier from the concentration of boron using FIG. 4 will be described. For example, the concentration of boron can be set to "1.85×10 20 / cm 3 In this case, if the thickness of the p-type diamond is 1 μm, the resistance value will be 1.41 kΩ / □, as shown in Figure 4. If the resistor element has a L (length) / W (width) ratio of 7.16, a resistor element with a resistance value of about 10 kΩ can be fabricated.

[0078] Consider a power amplifier consisting of this resistive element and a diamond transistor with a mutual conductance of 1 mS. The gain of this voltage amplifier is 10 times, considering that gain = - mutual conductance x resistance value. In this way, the gain of the voltage amplifier can be determined from the boron concentration. That is, once the boron concentration is preset, the gain is determined based on the relationship between boron concentration and resistivity shown in Figure 4, the structural parameters of the resistive element (thickness, length, width), and the mutual conductance of the diamond transistor (known).

[0079] Conversely, when the amplification factor is preset, the set amplification factor and the known mutual conductance are substituted into "amplification factor = - mutual conductance x resistance value". This allows the resistance value to be calculated. Next, the resistivity is calculated from the resistance value. After that, the boron concentration can be determined from the calculated resistivity based on FIG. 4. In this way, the boron concentration can be determined from the amplification factor. That is, when the amplification factor is preset, the boron concentration is determined based on the relationship between the boron concentration and resistivity shown in FIG. 4, the structural parameters (thickness, length, width) of the resistor element, and the mutual conductance (known) of the diamond transistor.

[0080] By using the above-mentioned procedure, for example, when a tolerance range for a reference value of the amplification factor is given, it is possible to calculate the tolerance range of the boron concentration for realizing an amplification factor within this tolerance range. Therefore, Fig. 4 can be used to associate the tolerance range of the amplification factor with the tolerance range of the boron concentration. In other words, Fig. 4 has the very important technical significance of relating the tolerance range of the amplification factor with the tolerance range of the boron concentration.

[0081] <<Verification of effectiveness>> According to the embodiment, the concentration of boron introduced into the p-type diamond can be precisely controlled. As a result, in the resistance element having p-type diamond, the resistance value is less likely to deviate from the reference value. As a result, the gain of the voltage amplifier using the resistance element is also less likely to deviate from the reference value. Below, the verification result that the gain of the voltage amplifier using the resistance element is less likely to deviate from the reference value by manufacturing the resistance element having p-type diamond by the manufacturing method in the embodiment will be described.

[0082] The manufacturing method of the embodiment allows the concentration of boron to be "1.85 x 10 20 / cm 3 When the thickness of the p-type diamond 103 is 1 μm, the resistance value of the p-type diamond is 1.41 kΩ / □ with good reproducibility.

[0083] Here, the four-probe method using Kyowa Riken's "K-89PS" is used to measure the resistance of p-type diamond. The four-probe method is a measurement method described below. First, four needle electrodes (four-probe) are placed in a straight line on the sample. A constant current is then passed between the two outer probes. After that, the resistance of the sample is measured by measuring the potential difference generated between the two inner probes.

[0084] Next, the shape of the resistor element is designed so that the resistance value of the resistor element having the p-type diamond described above is 10 kΩ. In this way, a resistor element with a resistance value of 10 kΩ is designed. In addition, a diamond transistor with a mutual conductance of 1 mS is designed. The resistor element and diamond transistor designed in this way are fabricated on a diamond substrate. This allows the creation of a voltage amplifier.

[0085] Specifically, a power amplifier with a reference gain of "10 times" is fabricated on a diamond substrate. This power amplifier is composed of a resistive element having p-type diamond and a diamond transistor. The gain of a power amplifier is expressed as "-mutual conductance x resistance value". For this reason, a diamond transistor with a mutual conductance of "1mS" and a resistive element made of p-type diamond with a resistance value of "10kΩ" are fabricated on the diamond substrate. The parameter measurement equipment is as follows:

[0086] (A) Prober: Vector Semiconductor Manual Prober (TS150) (B) Semiconductor parameter analyzer: Keysight B1505A Next, we performed a circuit simulation on the fabricated voltage amplifier. The software used for the circuit simulation was "Excel" and "LT spice".

[0087] FIG. 5 is a diagram showing the results of a circuit simulation.

[0088] As shown in Figure 5, the signal strength of the output signal is about "10 times" the signal strength of the input signal. This indicates that the amplification factor of the fabricated voltage amplifier is almost the same as the reference value. This proves that the amplification factor of a voltage amplifier using a resistance element fabricated by the manufacturing method of the embodied embodiment has a small deviation from the reference value.

[0089] <<Application Examples>> By adopting the manufacturing method of p-type diamond in the embodiment, it is possible to manufacture a resistance element having a resistance value with a small deviation from a reference value. Therefore, when this resistance element is used in a voltage amplifier, the gain of the voltage amplifier has a small deviation from a reference value. In other words, according to the embodiment, it is possible to provide a voltage amplifier with excellent performance, having a gain close to a reference value.

[0090] In this regard, voltage amplifiers are the basis of electronic or electric circuits. For this reason, if the performance of a voltage amplifier can be improved, the performance of semiconductor devices for a wide range of applications can be improved. Furthermore, semiconductor devices including voltage amplifiers are used in various electronic devices. Therefore, the performance of electronic devices including the semiconductor device in the embodied embodiment as a component can be improved.

[0091] In the following, application examples to electronic devices including semiconductor devices in embodied aspects will be described.

[0092] (1) Application to optical sensor systems Optical sensor systems are used, for example, to detect the fluorescence of chemical substances. In detecting the fluorescence of chemical substances, it is important to know whether or not the substance is present. On the other hand, the amplification factor of an optical sensor system is allowed to have a certain degree of error with respect to a reference value from the viewpoint of system configuration.

[0093] For example, the amplification factor of a voltage amplifier included in an optical sensor system is allowed to be 0.1 to 10 times the reference value. In this case, as described above, the allowable range of the amplification factor and the allowable range of the boron concentration are related to each other. Specifically, when the reference value of the boron concentration is set to "1.0×10 20 (1 / cm 3 ) and using the formula shown in Figure 4, in order for the amplification rate to be within the allowable range of 0.1 to 10 times the reference value, the boron concentration must be within the range of the reference value (1.0 x 10 20 (1 / cm 3 )" for "3.52 × 10 19 (1 / cm 3 ) or more "2.85×10 20 (1 / cm 3 )” range. Therefore, the deviation from the standard value is within “6.48×10 19 (1 / cm 3 ) or more than 1.85×10 20 (1 / cm 3 )” range. In other words, the above-mentioned deviation range must be within the standard value of “1.0 × 10 20 (1 / cm 3) the boron concentration must be between 65% and 185% of the standard value.

[0094] When this is expressed as the resistance value of a resistive element, the reference value is 5.45 × 10 -1 (Ωcm)", the allowable resistance is 2.72×10 -1 (Ωcm) or more 4.88×10 0 (Ωcm) or less. In other words, the allowable resistance value is expressed as 50% or more and 896% or less. An optical sensor system having a voltage amplifier with such performance can be realized in the embodiment. Therefore, the semiconductor device in the embodiment can be applied to an optical sensor system. This makes it possible to realize a high-performance optical sensor system.

[0095] (2) Application to semiconductor devices for digital circuits For example, in a semiconductor device for digital circuits, such as a logic IC, it is important that the signal does not exceed a certain threshold value. In this regard, in a semiconductor device for digital circuits, the threshold value is set to a level that will not be exceeded even if noise is superimposed on the signal. Therefore, for example, in a semiconductor device for digital circuits, there is no operational problem even if the signal fluctuates from 0.2 to 5 times the reference value. In other words, an error of about 0.2 to 5 times the reference value is acceptable in a semiconductor device for digital circuits.

[0096] In this case, as described above, the allowable range of the amplification factor and the allowable range of the boron concentration are related to each other. 20 (1 / cm 3 ) and using the formula shown in Figure 4, in order for the amplification rate to be within the allowable range of 0.2 to 5 times the standard value, the deviation of the boron concentration from the standard value is 5.17 x 10 19 (1 / cm 3 ) or more than 1.08×10 20 (1 / cm 3 )” range. In other words, the above-mentioned deviation range must be within the standard value of “1.0 × 10 20 (1 / cm 3) the boron concentration must be between 52% and 108% of the standard value.

[0097] When this is expressed as the resistance value of a resistive element, the reference value is 5.45 × 10 -1 (Ωcm)", the allowable resistance is 4.36×10 -1 (Ωcm) or more 2.16×10 0 (Ωcm) or less. In other words, the allowable resistance value is expressed as 80% or more and 396% or less. A semiconductor device for digital circuits having such performance can be realized in the embodiment. Therefore, the semiconductor device in the embodiment can be applied to a semiconductor device for digital circuits. This makes it possible to realize a high-performance semiconductor device for digital circuits.

[0098] (3) Application to audio equipment For example, it is assumed that the final volume output from an audio device will be adjusted by the user. Therefore, deviations in the amplification factor are not a problem as long as they do not adversely affect the audio device. Specifically, the deviation range of the amplification factor that does not adversely affect the audio device can be 0.5 to 2 times the reference value.

[0099] As described above, the allowable range of the amplification factor is related to the allowable range of the boron concentration. 20 (1 / cm 3 ) and using the formula shown in Figure 4, in order for the amplification rate to be within the allowable range of 0.5 to 2 times the standard value, the deviation of the boron concentration from the standard value must be within "2.67 x 10 19 (1 / cm 3 )" or "3.70×10 19 (1 / cm 3 )” range. In other words, the above-mentioned deviation range must be within the standard value of “1.0 × 10 20 (1 / cm 3 ) the boron concentration must be between 27% and 37% of the standard value.

[0100] When this is expressed as the resistance value of a resistive element, the reference value is 5.45 × 10 -1 (Ωcm)", the allowable resistance is 4.90×10 -1 (Ωcm) or more 5.34×10 -1 (Ωcm) or less. In other words, the allowable resistance value is expressed as 90% or more and 96% or less. Audio equipment having such performance can be realized in the embodiment. Therefore, the semiconductor device in the embodiment can be applied to audio equipment. This makes it possible to realize high-performance audio equipment.

[0101] <Features of semiconductor device> According to the above-mentioned embodiment, a resistive element having a resistance value with a small deviation from a reference value can be formed from p-type diamond. Therefore, a diamond transistor and a resistive element having p-type diamond can be formed on the same diamond substrate. That is, the semiconductor device includes a resistive element formed on a diamond substrate and a field effect transistor formed on the diamond substrate. The resistive element is made of diamond doped with conductive impurities. The field effect transistor is made of a diamond transistor. The configuration of such a semiconductor device is characteristic.

[0102] FIG. 6 is a diagram illustrating a configuration of a semiconductor device.

[0103] In Fig. 6, the semiconductor device has a diamond transistor forming region in which a diamond transistor 200 is formed, and a resistor element forming region in which a resistor element 100 is formed. Note that the configuration of the resistor element 100 formed in the resistor element forming region is the same as that in Fig. 3, so the description of the configuration of the resistor element is omitted. Below, the configuration of the diamond transistor 200 formed in the diamond transistor forming region is described.

[0104] Here, a surface conduction type FET will be described as an example of the diamond transistor 200. However, the diamond transistor 200 is not limited to a surface conduction type FET, and can be configured from various types of transistors.

[0105] 6, a contact layer 201 and a contact layer 202 are provided separately from each other on a non-doped layer 102. Each of the contact layers 201 and 202 is a p-type doped layer having a high concentration of boron, which is a p-type impurity (acceptor). + Specifically, a high concentration of boron is introduced into each of the contact layers 201 and 202 so as to be in ohmic contact with the non-doped layer 102. Specifically, the concentration of boron is, for example, 5×10 19 / cm 3 That's it, 1 x 10 22 / cm 3 The thickness of each of the contact layer 201 and the contact layer 202 is, for example, about 20 nm or more and 300 nm or less.

[0106] It should be noted that the contact layers 201 and 202 do not necessarily have to be provided. For example, a source electrode and a drain electrode made of gold electrodes or the like may be formed directly on the hydrogen-terminated non-doped layer 102 to provide ohmic contact.

[0107] A source electrode 203 is provided on the contact layer 201. Meanwhile, a drain electrode 204 is provided on the contact layer 202. Subsequently, an insulating film 205 is provided on the non-doped layer 102 between the contact layer 201 and the contact layer 202, and a gate electrode 206 is provided on the insulating film 205.

[0108] Here, the electrode materials of the source electrode 203, the drain electrode 204, and the gate electrode 206 are, for example, gold (Au), ruthenium (Ru), aluminum (Al), titanium (Ti), molybdenum (Mo), copper (Cu), chromium (Cr), lead (Pb), zinc (Zn), platinum (Pt), or a combination thereof (such as Ti / Mo / Au). The thicknesses of the source electrode 203, the drain electrode 204, and the gate electrode 206 are, for example, about 10 nm or more and 500 nm or less.

[0109] On the other hand, the insulating film 205 is configured to include, for example, any one of an aluminum oxide film (Al2O3), a silicon oxide film (SiO2), a calcium fluoride film (CaF2), a hafnium oxide film (HfO2), an aluminum nitride film (AlN), a boron nitride film (BN), a silicon nitride film (Si3N4), a silicon oxynitride film (SiON), a tantalum oxide film (Ta2O5), a titanium oxide film (TiO2), a tungsten oxide film (WO3), a lanthanum fluoride film (LaF3), or a magnesium fluoride film (MgF2). The thickness of the insulating film 205 is, for example, about 5 nm or more and 1000 nm or less. When manufacturing a fine surface conduction type FET, it is desirable to set the thickness of the insulating film 205 to a thickness of 100 nm or less.

[0110] In this manner, a semiconductor device is constructed in which the diamond transistor 200 and the resistance element 100 are formed on the diamond substrate.

[0111] The advantages of the semiconductor device will be described below.

[0112] For example, with conventional technology, it is difficult to precisely control the concentration of p-type impurities introduced into the p-type diamond 103. This makes it difficult to keep the resistance value within an allowable range relative to a reference value. This makes it difficult to form a resistance element having the p-type diamond 103.

[0113] For this reason, in the current technology, a semiconductor device including a voltage amplifier is composed of a combination of a part in which a diamond transistor is formed on a diamond substrate and a part in which a resistor element is formed on a silicon substrate, for example. In other words, a semiconductor device including a voltage amplifier is composed of a combination of multiple discrete parts.

[0114] The current semiconductor device configured as above has room for improvement as follows. That is, the multiple discrete components are connected to each other by wires such as gold wires. Therefore, noise occurs due to the parasitic inductance of the wires. In addition, since the semiconductor device is configured by multiple discrete components, it is difficult to miniaturize the semiconductor device. Furthermore, as a result of an increase in wiring and electrode pads, parasitic resistance and parasitic capacitance increase. This causes signal delay. Therefore, it becomes difficult to realize a semiconductor device for high frequency signals. In addition, the process of manufacturing the semiconductor device becomes complicated. This leads to a decrease in the manufacturing yield of the semiconductor device and an increase in the manufacturing cost.

[0115] Furthermore, a semiconductor device including a voltage amplifier is composed of multiple discrete components. For this reason, for example, each time a semiconductor device including a voltage amplifier with a different amplification factor is manufactured, a resistance element needs to be custom-made for the diamond transistor. This is unrealistic in terms of social implementation.

[0116] In contrast, in the semiconductor device of this embodiment, for example, as shown in FIG. 6, a diamond transistor 200 and a resistance element 100 are formed on a diamond substrate. Therefore, according to this embodiment, a semiconductor device including a voltage amplifier can be constructed from a single component. In other words, in this embodiment, a semiconductor device including a voltage amplifier is not constructed from a plurality of discrete components. Therefore, according to this embodiment, the above-mentioned room for improvement (disadvantages) that arise when constructed from a plurality of discrete components does not become apparent. That is, according to the semiconductor device of this embodiment, the performance can be improved. In addition, the diamond transistor 200 and the resistance element 100 formed on the diamond substrate can be integrally covered with a passivation film (surface protection film). This makes it possible to suppress performance changes over time of the semiconductor device. Furthermore, the process of combining a plurality of discrete components is also unnecessary. In other words, according to this embodiment, the manufacturing process can be simplified. Therefore, the manufacturing yield of the semiconductor device can be improved. This leads to a reduction in manufacturing costs.

[0117] As described above, according to this embodiment, the diamond transistor 200 and the resistor element 100 can be formed on the diamond substrate.

[0118] Further developing this configuration, for example, as shown in Fig. 7, in a diamond wafer WF having a plurality of chip regions CR, a resistance element 100 having diamond doped with conductive impurities and a diamond transistor 200 can be formed in each of the plurality of chip regions CR. In this configuration in which a plurality of types of diamond elements D1 (resistance element 100 and diamond transistor 200) are formed in each of the plurality of chip regions CR of the diamond wafer WF, the performance of the diamond element D1 is more stable than a combination of a plurality of discrete components.

[0119] In addition, when a large number of diamond elements D1 are formed on the diamond wafer WF, it becomes easier to manufacture diamond elements D1 with uniform performance. For this reason, the configuration in which a large number of diamond elements D1 are formed on the diamond wafer WF has great practical merits.

[0120] Furthermore, even if the physical property values ​​of the diamond elements D1 formed on the diamond wafer WF have "unevenness," the "unevenness" of the physical property values ​​may be compensated for. In other words, in a diamond wafer WF having multiple chip regions CR, even if the physical property values ​​of diamond differ between a first region and a second region of the multiple chip regions CR, the characteristics of the semiconductor device based on the difference in the physical property values ​​may be compensated for.

[0121] For example, if the resistance value becomes high in "a certain region" of the diamond wafer WF, the performance of the diamond transistor 200 will deteriorate (the transconductance will decrease). On the other hand, in this case, the resistance value of the resistance element 100 may become high. As a result, for example, in a voltage amplifier composed of the diamond transistor 200 and the resistance element 100, the amplification factor (=-transconductance x resistance value) does not change significantly. In other words, depending on the type of diamond element D1 formed on the diamond wafer WF, the "unevenness" of the local physical property values ​​of the diamond wafer WF may be compensated for.

[0122] In this manner, in a diamond wafer WF having a plurality of chip regions CR, it is useful to form a resistance element 100 having diamond doped with conductive impurities and a diamond transistor 200 in each of the plurality of chip regions CR.

[0123] <About standard values> Finally, the reference value used in this specification will be described.

[0124] The reference value in this specification means, first of all, a design value. This design value can be specified, for example, by a circuit diagram or product specifications of a product. Here, when the design value cannot be specified by a circuit diagram or product specifications, the reference value means an average value calculated by the following procedure. Specifically, (1) ten semiconductor devices are prepared. (2) Actual measurements are obtained for each semiconductor device, and the average of the ten actual measurements is regarded as the average value.

[0125] For example, the average resistance value of a resistor element is obtained by measuring the resistance values ​​of resistor elements included in ten semiconductor devices and obtaining ten actual measured values.The average value is then calculated based on the obtained ten actual measured values.The average value thus calculated becomes a secondary reference value when the design value cannot be specified.

[0126] As described above, the reference value in this specification is primarily the design value, but when the design value cannot be specified, it is secondarily the average value calculated by the above-mentioned procedure. As a result, the reference value in this specification is clearly defined.

[0127] The invention made by the inventor has been specifically described above based on the embodiment thereof. However, it goes without saying that the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention. [Explanation of symbols]

[0128] 1 Load resistance element 2. Field-effect transistor 100 Resistor element 101 Diamond Substrate 102 Non-doped layer 103 P-type diamond 104 Electrode 105 Electrode 200 Diamond Transistor 201 Contact layer 202 Contact layer 203 Source Electrode 204 Drain electrode 205 Insulating film 206 Gate electrode CR Chip Area D Drain D1 Diamond element G Gate S Source WF Diamond wafer

Claims

1. A semiconductor device including a resistor element having diamond doped with conductive impurities, A semiconductor device, wherein a resistance value of the resistive element is 50% or more and 900% or less of a reference value.

2. 2. The semiconductor device according to claim 1, The resistance value of the resistive element is 80% or more and 400% or less of the reference value.

3. 2. The semiconductor device according to claim 1, The resistance value of the resistive element is 90% or more and 200% or less of the reference value.

4. 2. The semiconductor device according to claim 1, The conductive impurities are p-type impurities.

5. A semiconductor device including a resistor element having diamond doped with conductive impurities, A semiconductor device, wherein the concentration of the conductive impurity is 20% or more and 200% or less with respect to a reference value.

6. 6. The semiconductor device according to claim 5, The concentration of the conductive impurity is 30% or more and 150% or less of the reference value.

7. 6. The semiconductor device according to claim 5, The concentration of the conductive impurity is not less than 50% and not more than 110% of the reference value.

8. 6. The semiconductor device according to claim 5, The conductive impurity is boron.

9. A semiconductor device including a voltage amplifier, The voltage amplifier includes: A load resistive element; a transistor connected in series with the load resistor; having the load resistor element comprises diamond doped with conductive impurities, The semiconductor device, wherein the transistor is a diamond transistor.

10. 10. The semiconductor device according to claim 9, The amplification factor of the voltage amplifier is 0.1 to 10 times the reference value.

11. 10. The semiconductor device according to claim 9, The amplification factor of the voltage amplifier is 0.2 to 5 times the reference value.

12. 10. The semiconductor device according to claim 9, The amplification factor of the voltage amplifier is 0.5 to 2 times the reference value.

13. A resistor element formed on a diamond substrate; A transistor formed on the diamond substrate; A semiconductor device comprising: The resistor element includes diamond doped with conductive impurities, The semiconductor device, wherein the transistor is a diamond transistor.

14. 14. The semiconductor device according to claim 13, The resistive element and the transistor are components of a voltage amplifier.

15. 14. The semiconductor device according to claim 13, The conductive impurities are p-type impurities.

16. A plurality of chip regions; Each of the plurality of chip regions includes at least A resistive element having diamond doped with conductive impurities; a transistor comprising a diamond transistor; A diamond wafer is formed on the diamond.

17. 17. The diamond wafer according to claim 16, the plurality of chip regions include a first region and a second region; The physical properties of diamond in the first region and the second region are different.

18. 18. The diamond wafer according to claim 17, the resistor element and the transistor are components of a voltage amplifier; The physical property value is a resistance value, a transconductance of a transistor formed in the first region is smaller than a transconductance of a transistor formed in the second region; The resistance value of the resistive element formed in the first region is higher than the resistance value of the resistive element formed in the second region.

19. An electronic device comprising the semiconductor device according to any one of claims 1 to 15 as a component.

20. (a) providing a diamond substrate; (b) polishing the top surface of the diamond substrate; (c) removing polishing defects; (d) cleaning the top surface of the diamond substrate; (e) forming a conductive impurity-doped diamond on the top surface of the diamond substrate; Equipped with The method for manufacturing a semiconductor device, wherein in the step (e), the diamond doped with the conductive impurity is formed by a plasma CVD method while feedback-controlling the temperature and controlling the amount of the conductive impurity to be doped.

21. 21. The method of manufacturing a semiconductor device according to claim 20, The conductive impurities are p-type impurities.

22. 21. The method of manufacturing a semiconductor device according to claim 20, the diamond substrate is a diamond wafer having a plurality of chip regions; In the step (e), a resistive element having at least the diamond doped with the conductive impurity is formed in each of the plurality of chip regions.

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