Thermal switch for wafer temperature control

Abstract

To provide a thermal switch for wafer temperature control.SOLUTION: A method, a system, and an apparatus for substrate processing including a susceptor and a thermal protection plate disposed above the susceptor, the thermal protection plate includes a first lift pin through hole extending from a top surface of the thermal protection plate to a bottom surface of the thermal protection plate, the susceptor includes a second lift pin through hole and a plate lift member through hole, and the plate lift member is configured to slidably engage with the plate lift member through hole.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates generally to semiconductor processing equipment, and specifically to semiconductor processing equipment including mechanisms for preventing contamination of a substrate supported by a susceptor. The present disclosure also relates generally to methods for processing a substrate, and specifically to methods for preventing contamination of the substrate during a processing step. [Background technology]

[0002] The reaction chamber may be used to deposit various layers of materials onto a semiconductor substrate. For example, a semiconductor substrate, such as a silicon substrate, may be placed on a susceptor inside the reaction chamber. Both the substrate and the susceptor may be heated to a desired substrate temperature set point. In an exemplary substrate treatment process, one or more reactant gases may be passed over the heated substrate, causing the deposition of a thin film of material on the substrate surface. Through subsequent deposition, doping, lithography, etching, and other processes, these layers are made into integrated circuits.

[0003] One important control condition during processing is the temperature of the substrate. As technology nodes continue to evolve, the demand to rapidly regulate the substrate temperature also increases. Currently, temperature regulation is a challenge due to the difficulty associated with rapidly changing the temperature of a large amount of material in a chamber that can radiate heat to the substrate, frustrating efforts to rapidly change the substrate temperature. Summary of the Invention

[0004] This Summary is provided to introduce a selection of concepts in a simplified form that are described in further detail in the Detailed Description of Example Embodiments of the Disclosure below. This Summary is not necessarily intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] In one aspect, a substrate processing assembly includes a susceptor and a thermal protection plate disposed above the susceptor, the thermal protection plate including a first lift pin through hole extending from a top surface of the thermal protection plate to a bottom surface of the thermal protection plate, the susceptor including a second lift pin through hole and a plate lift member through hole, the plate lift member configured to slidably engage with the plate lift member through hole.

[0006] The apparatus may also include where the thermal protection plate has a surface and includes a polished silicon carbide, a polished diamond-like carbon coating, a layer of aluminum nitride, or a layer of diamond-like carbon, or a combination thereof.

[0007] The apparatus may also include where the thermal protection plate further includes a plate lift member contact on a bottom surface.

[0008] The apparatus may also include where the thermal protection plate includes features extending from the bottom surface and matching the shape of a mating cavity in the susceptor top surface.

[0009] The apparatus may also include where the susceptor includes features extending from the top surface and matching the shape of a mating cavity in the thermal protection plate.

[0010] The apparatus may also include where the thermal protection plate mounting surface is concave to constrain lateral movement.

[0011] The apparatus may also include a case in which the plate lift member is coupled to an actuator.

[0012] The apparatus may also include a plurality of contacts disposed on a bottom surface of the thermal protection plate, one or more of the plurality of contacts configured to couple to one or more of the plurality of plate lift members.

[0013] The apparatus may also include where one or more of the plate lift member through holes are axially aligned with at least one of the plurality of contacts.

[0014] The apparatus may also include where a first lift pin through hole in the thermal protection plate is axially aligned with a second lift pin through hole in the susceptor.

[0015] The apparatus may also include where the thermal protection plate further includes a mounting surface including a recess configured to provide circumferential support to a substrate disposed within the recess.

[0016] The apparatus may also include where the plate lift member includes a mating surface at a distal end.

[0017] The device may also include where the mating surface includes at least one of a roughened surface, an attachment surface, or a fastener, or a combination thereof.

[0018] The apparatus may also include where the thermal protection plate mounting surface includes an upper mounting surface that includes sloped sidewalls to constrain lateral movement. Other technical features may be readily apparent to one skilled in the art from the following figures, descriptions, and claims.

[0019] In one aspect, a semiconductor processing method includes placing a substrate on a surface of a thermal protection plate above a susceptor in a chamber, contacting the susceptor with the thermal protection plate, exposing the substrate to a first process that heats the substrate to a first temperature, moving the thermal protection plate to a position that discontinues contact with the susceptor, and cooling the substrate in response to discontinuing contact.

[0020] The method may also include where the first temperature is from about 200°C to about 600°C.

[0021] The method may also include exposing the substrate to a second process that heats the substrate to a second temperature, where the second temperature is lower than the first temperature. Other technical features may be readily apparent to one skilled in the art from the following figures, descriptions, and claims.

[0022] The apparatus may also include cases where the plate lift member contact points include recesses, mating surfaces, roughened surfaces, attachment surfaces, or fasteners, or combinations thereof.

[0023] The method may also include where the first temperature is from about 200°C to about 600°C.

[0024] The method may also include where the second temperature is about 10° C. to about 200° C. Other technical features may be readily apparent to one skilled in the art from the following figures, descriptions, and claims.

[0025] For the purpose of summarizing the present disclosure and the advantages achieved over the prior art, certain objects and advantages of the present disclosure have been described herein above. Of course, it should be understood that not all of these objects or advantages can be achieved in accordance with any particular embodiment or example of the present disclosure. Thus, for example, one skilled in the art will recognize that the embodiments disclosed herein can be implemented in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objects or advantages as taught or suggested herein.

[0026] All of these examples are intended to be within the scope of the present disclosure. These and other embodiments will become readily apparent to those of ordinary skill in the art from the following Detailed Description of Certain Examples which refer to the accompanying drawings, and the present disclosure is not limited to any particular examples discussed.

[0027] While the specification concludes with claims particularly pointing out and distinctly claiming what are regarded as embodiments or examples of the present disclosure, the advantages of embodiments of the present disclosure may be more readily ascertained from the description of certain specific examples of the present disclosure when read in conjunction with the accompanying drawings, in which elements with like element numbering throughout the drawings are intended to be identical. [Brief description of the drawings]

[0028] [Figure 1] FIG. 1 illustrates a schematic diagram of a reactor system according to an embodiment of the present technique. [Diagram 2] FIG. 2 illustrates a schematic diagram of a reactor system having multiple reaction chambers, according to an embodiment of the present technique. [Figure 3A] FIG. 3A illustrates a schematic diagram of a reactor system according to an embodiment of the present technique. [Figure 3B] FIG. 3B illustrates a schematic diagram of a reactor system according to an embodiment of the present technique. [Figure 3C] FIG. 3C illustrates a schematic diagram of a reactor system according to an embodiment of the present technique. [Figure 3D] FIG. 3D illustrates a schematic diagram of a reactor system according to an embodiment of the present technique. [Figure 4] FIG. 4 illustrates a schematic diagram of components of a reactor system according to an embodiment of the present technique. [Diagram 5] FIG. 5 illustrates a schematic diagram of components of a reactor system according to an embodiment of the present technique. [Figure 6] FIG. 6 illustrates a schematic diagram of components of a reactor system according to an embodiment of the present technique. [Figure 7] FIG. 7 illustrates a schematic diagram of components of a reactor system according to an embodiment of the present technique. [Figure 8] FIG. 8 illustrates a schematic diagram of components of a reactor system according to an embodiment of the present technique. [Figure 9] FIG. 9 illustrates a schematic diagram of components of a reactor system according to an embodiment of the present technique. [Figure 10]FIG. 10 illustrates a schematic diagram of components of a reactor system according to an embodiment of the present technique. [Figure 11] FIG. 11 illustrates a processing method according to an embodiment of the present technique. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] The detailed description of the various embodiments herein refers to the accompanying drawings, which show, by way of example, exemplary embodiments. These exemplary embodiments are described in sufficient detail to enable one skilled in the art to practice the disclosure, but it will be appreciated that other embodiments may be realized and logical, chemical, and / or mechanical changes may be made without departing from the spirit and scope of the disclosure. Thus, the detailed description of the embodiments herein is presented for purposes of illustration only and not for purposes of limitation. For example, the steps recited in any of the method or process descriptions may be performed in any combination and / or order and are not limited to the combination and / or order presented. Furthermore, one or more steps from one of the disclosed methods or processes may be combined with one or more steps from another of the disclosed methods or processes in any suitable combination and / or order. Furthermore, any of the functions or steps may be outsourced to or performed by one or more third parties. Furthermore, any reference to the singular includes multiple examples and any reference to two or more components may include examples of the singular.

[0030] Although certain specific embodiments and examples are disclosed below, it will be understood by those skilled in the art that the disclosure extends beyond the specifically disclosed examples and / or uses of the disclosure, and obvious modifications and equivalents thereof, and therefore it is not intended that the scope of the disclosure should be limited by the specific examples described herein.

[0031] The examples presented herein are not intended to be actual examples of any particular materials, apparatus, structures, or devices, but are merely representations used to describe embodiments of the present disclosure.

[0032] As used herein, the term "substrate" can refer to any underlying material or materials that may be used or upon which a device, circuit, or film / layer may be formed.

[0033] As used herein, the term "atomic layer deposition" (ALD) can refer to a deposition process in which a deposition cycle, preferably multiple consecutive deposition cycles, are performed in a process chamber. Typically, during each cycle, a precursor is chemisorbed to a deposition surface (e.g., a substrate surface or a previously deposited underlying surface (such as material from a previous ALD cycle)) to form a monolayer or quasi-monolayer that does not readily react with additional precursors (i.e., self-limiting reaction). If necessary, a reactant (e.g., another precursor or reactant gas) may then be introduced into the process chamber for use in converting the chemisorbed precursor to a desired material on the deposition surface. Typically, this reactant has the capability of further reaction with the precursor. In addition, a purge step can also be utilized during each cycle to remove excess precursor from the process chamber after conversion of the chemisorbed precursor and / or to remove excess reactants and / or reaction by-products from the process chamber. Additionally, as used herein, the term "atomic layer deposition" is also meant to include processes designated by related terms, such as "chemical atomic layer deposition," "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas source MBE, or metalorganic MBE, as well as chemical beam epitaxy when carried out using alternating pulses of precursor compositions, reactive gases, and purge (e.g., inert carrier) gases.

[0034] As used herein, the term "chemical vapor deposition" (CVD) can refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce a desired deposit.

[0035] As used herein, the terms "layer", "film", and / or "thin film" can refer to any continuous or non-continuous structure and material deposited by the methods disclosed herein. For example, a "layer", "film", and / or "thin film" can include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or even clusters of atoms and / or molecules. A "layer", "film", and / or "thin film" can include materials or layers that have pinholes, but can still be at least partially continuous.

[0036] Further, in this disclosure, any two numbers for a variable can constitute a workable range for that variable, and any ranges stated can include or exclude the endpoints. In addition, any values ​​for a stated variable (whether they are stated with "about" or not) can refer to exact or approximate values, and can include equivalents, and can refer to averages, median, representative values, majority, or the like. Furthermore, in this disclosure, the terms "comprises," "comprises," "has," and "has" can, in some embodiments, independently refer to "typically or broadly includes," "comprises," "consists essentially of," or "consists of." In this disclosure, any defined meaning does not necessarily exclude, in some embodiments, the ordinary and customary meaning.

[0037]

[0005] Examples of the present disclosure may include semiconductor processing equipment and methods that may be utilized to process substrates within the semiconductor processing equipment. The semiconductor processing equipment may include a dual chamber module, where an upper chamber is configured to process one or more substrates and a lower chamber is configured to load and unload the one or more substrates into and out of the semiconductor processing equipment.

[0038] The transfer of the substrate between the lower and upper chambers may be accomplished through the use of lift pins. For example, a susceptor onto which the substrate may be placed during processing may include a plurality of through holes. Each through hole may have an associated lift pin that may traverse in a vertical plane between the lower and upper chambers. For example, in some embodiments, the semiconductor processing equipment may include a susceptor that includes three through holes with three corresponding lift pins that may move in unison up and down in a vertical plane to raise and lower the substrate between the lower and upper chambers.

[0039] In one embodiment, the inefficiencies of the prior art discussed above may be mitigated by providing a thermal protection plate with low emissivity and high thermal conductivity inserted between the susceptor and the substrate in the processing chamber. The substrate may be placed on the thermal protection plate. To cool the substrate, the thermal protection plate may be raised, and due to its low emissivity, the thermal protection plate acts as a radiation shield, and the substrate absorbs only low radiation from the heater side. To heat the substrate, the thermal protection plate is brought back into contact with the heater, and due to its high thermal conductivity, the thermal protection plate may quickly absorb heat, which acts as an excellent heat spreader.

[0040] Referring now to FIG. 1, in various embodiments, a reactor system 150 can include a reaction chamber 104, a susceptor 106, and a thermal protection plate 140 for holding a substrate 130 during processing.

[0041] In one example, a number of lift pins 142 may be disposed beneath the substrate 130 and slidably engaged within through holes in the susceptor 106 and thermal protection plate 140. The lift pins 142 may be configured to translate vertically in the direction of arrow 170 to contact and lift the substrate 130 off of the thermal protection plate 140 (e.g., to a first substrate position 144). The lift pins 142 may be further configured to lower the substrate 130 from the first substrate position 144 to rest on the thermal protection plate 140 (e.g., at a second substrate position 146).

[0042] In one example, one or more plate lift members 154 may be disposed below the thermal protection plate 140 and slidably engaged within respective plate lift member through holes 318 in the susceptor 106. The plate lift members 154 may be configured to translate vertically in the direction of arrow 170 to contact and lift the thermal protection plate 140 off of the susceptor 106 (e.g., to a first substrate position). The plate lift members 154 may be further configured to lower the thermal protection plate 140 to rest on the susceptor 106.

[0043] In one embodiment, the susceptor 106 may be coupled to an actuator 148 configured to translate vertically to raise and lower the susceptor 106, thermal protection plate 140, and substrate 130 within the chamber 104 during processing (e.g., to contact reactants).

[0044] In one example, the reactor system 150 may include a fluid distribution system 108 (e.g., a showerhead) for distributing one or more reactants to a surface of the substrate 130, one or more reactant sources 110, 112, and / or 113, and / or carrier and / or purge gas sources 114 fluidly connected to the reaction chamber 104 via respective lines 116, 118, 119, and 120, and respective valves or controllers 122, 123, 125, and 126. Reactant gases or other materials from the respective sources 110, 112, and / or 113 may be applied to the substrate 130 in the reaction chamber 104. A purge gas from the gas source 114 may flow into and through the reaction chamber 104 to remove any excess reactants or other undesirable materials from the reaction chamber 104. The system 150 may also include a vacuum source 128 fluidly connected to the reaction chamber 104, which may be configured to evacuate reactants, purge gases, or other materials out of the reaction chamber 104.

[0045] The controller 152 can be configured to perform various functions and / or steps as described herein. The controller 152 can include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although the controller 152 is illustrated as a single unit, it can alternatively comprise multiple devices. By way of example, the controller 152 can be used to control gas flow (e.g., by monitoring flow rates and controlling valves 122, 123, 125, and / or 126), movement of the lift pins 142 (e.g., vertical translation in the direction of arrow 170), plate pins 154, actuators 148, various motors, heaters, cooling devices, and / or vacuum sources 128 to perform various processes (e.g., method 1100 shown in FIG. 11). Additionally, as described in more detail below, when the system includes two or more reaction chambers, the two or more reaction chambers can be coupled to the same controller / shared controller.

[0046] In some embodiments, a reactor system (eg, reactor system 150) can include multiple reaction chambers.

[0047] 2, for example, in a reactor system 200, several reaction chambers 204 (each of which may be an example reaction chamber 104 of FIG. 1) may be arranged around and / or coupled to a transfer chamber 280 that includes a transfer tool 285 for transferring substrates between the reaction chambers 204. Substrates may be transferred (e.g., through the transfer chamber 280) from the load lock chamber 212 and between the reaction chambers 204. For example, the substrate 130 may be located in different chambers for different steps of a semiconductor manufacturing process (e.g., etching, oxidation, passivation, and / or deposition steps may each be performed in the same chamber or may be performed in different chambers).

[0048] 3A-3D are schematic diagrams illustrating various positions of an assembly 300 of the susceptor 106, thermal protection plate 140, and substrate 130 within the reaction chamber 104. As shown in FIG.

[0049] 3A is a schematic diagram illustrating a cutaway view of an example reaction chamber 104 comprising a lower chamber 314 and an upper chamber 310. The susceptor 106 is disposed in a lower position within the lower chamber 314, and the substrate 130 is disposed in a raised first substrate position 144 held above by lift pins 142. The substrate 130 and susceptor 106 may be in these positions for loading / unloading the substrate 130 and / or for other purposes.

[0050] In one embodiment, the bottom surface 304 of the thermal protection plate 140 may be supported on a thermal protection plate mounting surface 302 of the susceptor 106 .

[0051] In one example, one or more lift pins 142 may be disposed beneath the substrate 130 and slidably engaged within respective lift pin through holes 306 in the susceptor 106 and respective lift pin through holes 308 in the thermal protection plate 140. In one example, the one or more lift pin through holes 306 in the susceptor 106 and the lift pin through holes 308 in the thermal protection plate 140 may be axially aligned to slidably engage a lift pin through both the lift pin through holes 308 and the lift pin through holes 306. In one example, the one or more lift pins 142 may be configured to fit into and / or seat within or on the respective bases 316.

[0052] In one embodiment, the plate lift member 154 may be configured to translate in a vertical plane to lift the thermal protection plate 140 away from the susceptor 106. The plate lift member 154 may be further configured to lower the thermal protection plate 140 onto the susceptor 106.

[0053] The plate lift members 154 may each be slidably engaged within a respective plate lift member through hole 318 extending through the susceptor 106. The plate lift members 154 may be fabricated from any of a variety of materials, such as metal (e.g., stainless steel, aluminum, C22) or ceramic (e.g., SiOx, AlN, AlOx, SiC, SiN), or any other suitable material. The plate lift members 154 may be any of a variety of shapes or dimensions selected to allow the plate lift members 154 to pass through the through holes 308.

[0054] In one embodiment, the plate lift members 154 may be configured to translate vertically up and down in the direction of arrow 170. The translation of the plate lift members 154 in the vertical plane may be actuated in any of a variety of ways. For example, the plate lift members 154 may be coupled to respective lift mechanisms 322 configured to raise and lower the plate lift members 154.

[0055] In one example, the plate lift member 154 may comprise a shaft 324 capable of vertical translation in the direction of arrow 330. It will be appreciated that the vertical translation may be accomplished by a variety of mechanisms, such as, for example, a motor, a pneumatic actuator, a screw drive actuator, a stepper motor, or any suitable conventional lift mechanism 322. It will be further appreciated by those skilled in the art that such a plate lift member 154 having a shaft 324 may comprise a telescoping portion capable of lifting or lowering the thermal protection plate 140 and / or the substrate 130.

[0056] In one embodiment, the plate lift members 154 may be configured to contact the bottom surface 304 of the thermal protection plate 140. In one embodiment, the bottom surface 304 may have one or more interlocking features 320 configured to interlock with the respective plate lift members 154. The interlocking features 320 may assist in attaching or otherwise connecting the plate lift members 154 to the bottom surface 304 of the thermal protection plate 140. The one or more interlocking features 320 may comprise notches, trenches, recesses, fasteners, roughened surfaces, textured surfaces, high friction material contacts, adhesives (e.g., Geckskin™), or the like, or combinations thereof. In one embodiment, the interlocking features 320 may comprise, but are not limited to, complementary mating features configured to interlock the thermal protection plate 140 with the plate lift members 154.

[0057] In a further embodiment, the thermal protection plate 140 includes a feature 370 extending from the bottom surface 304 and matching the shape of a mating cavity 371 or recess in the top surface 302 of the susceptor 106 .

[0058] In a further embodiment, the susceptor 106 includes a feature 372 extending from the upper surface 302 and matching the shape of a mating cavity 373 or recess in the thermal protection plate 140 .

[0059] FIG. 3B is a schematic diagram illustrating a cutaway view of an exemplary reaction chamber 104 comprising an upper chamber 310 and a lower chamber 314. In one embodiment, the susceptor 106, the thermal protection plate 140, and the substrate 130 are disposed within the lower chamber 314. In one embodiment, the actuator 148 may raise the susceptor 106 vertically in the direction of the arrow 330. As depicted in FIG. 3B, the susceptor 106 is near the upper chamber 310. In one embodiment, the substrate 130 may be lowered to a second substrate position 146, with the substrate 130 disposed within a recess 326 of the thermal protection plate 140. The substrate 130 and susceptor 106 may be in these positions for a variety of reasons, such as, for example, transition of the substrate 130 to the upper chamber 310 for processing, for cooling or heating of the substrate 130, to hold the substrate 130 prior to unloading and / or storage of the substrate 130, and / or for other purposes.

[0060] In one embodiment, the lift pins 142 may be retracted into the susceptor through-holes 306 so that the substrate 130 may be lowered or positioned within the recesses 326 of the thermal protection plate 140 when the actuator 148 raises the susceptor 106. The lift pins 142 may be retained within the susceptor 106 lift pin through-holes 306 while the susceptor 106 is in the raised position.

[0061] In one embodiment, the thermal protection plate lift members 154 may be raised by their respective lift mechanisms 322 and may remain coupled to or in contact with their respective coupling features 320 of the thermal protection plate 140 regardless of whether the thermal protection plate lift members 154 are applying a force to the thermal protection plate 140.

[0062] 3C is a schematic diagram illustrating a cutaway view of an exemplary reaction chamber 104 comprising an upper chamber 310 and a lower chamber 314. In one embodiment, the assembly 300 is arranged such that a substrate 130 is positioned within the upper chamber 310 for processing.

[0063] In one embodiment, the substrate 130 is positioned on a thermal protection plate mounting surface 332. When the susceptor 130 is moved upward in the direction of arrow 330, the substrate 130 may be positioned within a processing region 328 having a fluid distribution system 108 that defines an upper surface of the processing region 328.

[0064] 3C , the susceptor 106 is at or near the upper chamber 310. In one embodiment, the actuator 148 may vertically raise the susceptor 106 to position the substrate 130 in the processing region 328. In one embodiment, the substrate 130 is still in the second substrate position 146, with the substrate 130 disposed in the recess 316 of the thermal protection plate 140.

[0065] In one embodiment, the susceptor 106 may be configured to heat the substrate 130 to a desired processing temperature and may include one or more heating devices 336 for this purpose. The susceptor is generally configured to heat the substrate 130 to a temperature within a particular range. The design configuration of the susceptor generally depends on the operating temperature of the reactor chamber 104. As an example, some susceptors may be configured to operate within a temperature range of about 200° C. to about 600° C., while other susceptors may be configured to operate within a range of about 10° C. to about 200° C. In some cases, it may be desirable to expose the substrate 130 in the reactor to two or more different processes carried out at substantially different temperatures. In such cases, the susceptor 106 is likely not ideal for use with one or more different process temperatures. For example, high temperature (e.g., above about 200° C.) processes often use high mass, high watt density susceptors to enable heating of the susceptor and substrate. In contrast, lower temperature processes (e.g., below about 200° C.) generally employ higher mass, lower watt density susceptors, although in both cases the heater mass is high due to the desirability of maintaining a constant temperature setting.

[0066] Additionally, when the susceptor is used for processes operating at substantially different temperatures, it may take an undesirably long time to heat and / or cool the susceptor from one process temperature to another. To overcome this conventional shortcoming, the thermal protection plate 140 may be separated from the susceptor 106 to allow for more rapid cooling of the substrate 130 during processing and / or at other advantageous times.

[0067] 3D is a schematic diagram illustrating a cutaway view of an exemplary reaction chamber 104 comprising an upper chamber 310 and a lower chamber 314. In one embodiment, the assembly 300 is arranged such that a substrate 130 is positioned within the upper chamber 310 for processing.

[0068] In one example, the susceptor 106 and / or other components within the chamber 104 may heat the substrate 130 during processing. It may be desirable to quickly cool the substrate 130 during processing (e.g., between processing steps having different processing temperatures). To allow cooling of the substrate 130, the thermal protection plate 140 may be separated from the susceptor 106 during processing and / or at other advantageous times.

[0069] In one embodiment, the plate lift members 154 may be triggered to vertically translate and lift the thermal protection plate 140 upwardly and away from the susceptor 106 .

[0070] In one embodiment, the thermal protection plate 140 may include a low emissivity material. Therefore, even a small distance 338 (e.g., about 2.0 mm to 15.0 mm) between the thermal protection plate 140 and the susceptor 106 can block radiative heat transfer from the susceptor 106 to the substrate 130, thus improving the cooling rate for the substrate 130. Because the thermal protection plate 140 has high thermal conductivity, when the thermal protection plate 140 contacts the susceptor 106, it does not substantially interfere with the heat transfer from the susceptor 106 to the substrate 130. Therefore, coupling the thermal protection plate 140 to the susceptor 106 and removing the thermal protection plate 140 from the susceptor 106 can act as a switch to rapidly change the temperature of the substrate 130.

[0071] The thermal protection plate 140 may comprise a high thermal conductivity, low emissivity material to improve heat transfer while shielding the substrate 130 from radiation.

[0072] In one embodiment, the substrate 103 may be positioned within the recess 326 and may contact a portion of the thermal protection plate mounting surface (FIG. 4). Such contact with a high thermal conductivity material by the substrate 130 may further improve cooling of the substrate 130 through dissipation of heat from the substrate 130 to the thermal protection plate 140.

[0073] 4 illustrates an example variation of a thermal protection plate in cross-section. In one embodiment, in panel a), the thermal protection plate 140 may comprise a substantially flat substrate mounting surface 400 and a recess 326 in which the substrate 130 may be disposed. Walls 408 of the recess 326 may provide circumferential support around the periphery of the substrate 130 disposed within the recess 326, thereby constraining lateral movement of the substrate 130.

[0074] In one example, in panel b), the thermal protection plate 404 may comprise a substantially flat substrate mounting surface 406 without a recess 326 into which the substrate 130 may be disposed. Such a configuration may rely on a vacuum or pressure differential with the chamber to prevent lateral displacement of the substrate 130 on the thermal protection plate 404.

[0075] In one example, in panel c), the thermal protection plate 420 may comprise a curved or concave substrate mounting surface 410 within which the substrate 130 may be disposed. The walls 412 may constrain lateral movement of the substrate 130 by providing circumferential support around the periphery of the substrate 130.

[0076] In one example, in panel d), thermal protection plate 440 may comprise a substantially flat substrate mounting surface 442 and a recess 444 in which substrate 130 may be disposed. Walls 446 of recess 444 may comprise angled edges, such as beveled, angled, and / or chamfered edges, or the like. Walls 446 may provide circumferential support around the periphery of substrate 130 disposed within recess 444, thereby constraining lateral movement of substrate 130. Other thermal protection plate shapes, surfaces, recesses, and walls are possible, and claimed subject matter is not limited in this respect.

[0077] 5 illustrates in plan view an embodiment of a susceptor 106. In one embodiment, the susceptor 106 may include one or more through holes for accommodating one or more lift pins 142. The lift pin through holes 306 are distributed around the surface 500.

[0078] In one embodiment, the susceptor 106 may include one or more plate lift member through-holes 318 for accommodating the plate lift members 154 .

[0079] 6 illustrates in plan view an embodiment of the thermal protection plate 140. In one embodiment, the thermal protection plate 140 may include one or more through holes 308 for accommodating one or more lift pins. The lift pin through holes 308 are distributed around the bottom surface 304.

[0080] In one embodiment, the plate lift members 154 (see FIG. 1 ) may be configured to contact the bottom surface 304 of the thermal protection plate 140. In one embodiment, the bottom surface 304 may have one or more coupling features 320 configured to couple to a respective plate lift member 154. The coupling features 320 may assist in attaching or otherwise connecting the plate lift members 154 to the bottom surface 304 of the thermal protection plate 140.

[0081] In one embodiment, one or more of the interlocking features 320 may be axially aligned with the plate lift member through holes 318 in the susceptor 106 .

[0082] In some embodiments, the thermal protection plate 140 may include a material with high thermal conductivity and / or low emissivity to improve cooling by thermal conduction while shielding the substrate (e.g., substrate 130) from radiation (radiant heat).

[0083] In one embodiment, the thermal protection plate 140 may comprise a silicon carbide plate where one or more surfaces of the thermal protection plate 140 are polished silicon carbide surfaces. For example, at least the bottom surface 304 may have a polished silicon carbide surface. In other embodiments, additional surfaces of the thermal protection plate 140 may comprise polished silicon carbide surfaces. Such materials may have a thermal conductivity of greater than about 120 W / (mK) and an emissivity of about 0.2 to 0.6.

[0084] In another example, the thermal protection plate 140 may comprise a polished aluminum plate, where one or more surfaces of the thermal protection plate 140 are polished aluminum. For example, at least the bottom surface 304 may be polished aluminum. Such materials may have a thermal conductivity of greater than about 240 W / (mK) and an emissivity of about 0.09 to 0.24. It should be appreciated that the thermal conductivity and emissivity of polished surfaces are dependent on surface finish, oxidation and temperature, material composition and processing. Other types of polished surfaces are known to those of skill in the art and may be used in accordance with the present disclosure, and claimed subject matter is not limited in this respect.

[0085] In one embodiment, a thin coating layer with high thermal conductivity and low emissivity on the bottom surface 304 of the thermal protection plate 140 may be used to further improve the performance of the thermal protection plate 140 .

[0086] In one embodiment, AlN (aluminum nitride) may be used to coat the bottom surface 304 of the thermal protection plate 140. AlN coatings exhibit low emissivity, typically within the range of about 0.2-0.6, and have a thermal conductivity within the range of about 60-320 W / (mK).

[0087] In one embodiment, DLC (diamond-like coating) may be used to coat the bottom surface 304 of the thermal protection plate 140. DLC exhibits low emissivity, typically within the range of about 0.1-0.3, and has a thermal conductivity within the range of about 400-1000 W / (mK). Other types of coatings are known to those of skill in the art and may be used in accordance with the present disclosure, and claimed subject matter is not limited in this respect.

[0088] 7 illustrates an example of an assembly 700 including a susceptor 106 and a thermal protection plate 140. In one example, one or more of the lift pin through holes 306 may be aligned with one or more of the lift pin through holes 308. One or more of the lift pin through holes 306 may be axially aligned with a corresponding one or more of the lift pin through holes 308 along one or more axes 702, 704, and / or 706.

[0089] 8 illustrates an example of an assembly 800 including a susceptor 106 and a thermal protection plate 140. In one example, one or more plate lift member through holes 318 may be aligned with one or more of the linking features 320. One or more of the plate lift member through holes 318 may be axially aligned with a corresponding one or more of the linking features 320 along one or more axes 802, 804, and / or 806.

[0090] FIG. 9 illustrates an example of a plate lift member 154 having an interlocking feature 902 at a tip of the plate lift member 154. In one embodiment, the plate lift member 154 may be configured to contact the bottom surface 304 of the thermal protection plate 140. In one embodiment, the plate lift member 154 may have one or more interlocking features 902 configured to interlock with a respective interlocking feature 320 that may assist in attaching or otherwise connecting the plate lift member 154 to the bottom surface 304 of the thermal protection plate 140. The one or more interlocking features 902 may comprise mating shapes, grooves, recesses, fasteners, roughened surfaces, textured surfaces, high friction material contacts, adhesives (e.g., Geckskin™), or the like, or combinations thereof. In one embodiment, the interlocking features 902 may comprise, but are not limited to, complementary mating features configured to interlock the thermal protection plate 140 to the plate lift member 154.

[0091] FIG. 10 illustrates various lift mechanism embodiments. In panel a) there is a plate lift member 154 as described above with respect to FIGS. 1-9. In another embodiment, in panel b), a lift actuator 1002 may comprise one or more plate lift members 154 coupled to a plate 1012. The plate 1012 may be of any shape, for example circular or triangular. The plate 1012 may be coupled to a motor and shaft 1024 (optionally centrally located on the plate 1012 or to one side) that can translate vertically in the direction of arrow 330 (see FIG. 3A). The plate 1012 may be hollow and may fit around the lift pins 142 so as not to interfere with their function. The plate 1012 may be solid.

[0092] 11 is a flow chart illustrating a method 1100 for cooling the substrate 130 (see FIG. 3A). The method 1100 includes placing the substrate 130 on a surface of a thermal protection plate 140 above the susceptor 106 in the chamber 104 (step 1102), contacting the susceptor 106 with the thermal protection plate 140 (step 1104), exposing the substrate 130 to a first process that heats the substrate 130 to a first temperature (step 1106), and moving the thermal protection plate 140 to a position that interrupts contact with the susceptor 106 (step 1108). Interrupting contact allows the substrate 130 to cool to a temperature below the first temperature. The cooling results from the protection from radiant heat provided by the thermal protection plate 140. The method 1100 proceeds with exposing the substrate 130 to a second process that heats the substrate 130 to a second temperature (step 1110), the second temperature being less than the first temperature.

[0093] According to exemplary aspects of these embodiments, the first process and the second process can be performed at different temperatures. For example, the first process can be performed at a temperature of about 200°C to about 600°C, and the second process can be performed at, for example, 10°C to about 200°C. Additionally or alternatively, the substrate can be exposed to different reactants or inert gases during the first process and the second process. Also, the gas flow pattern can be changed for the first process and the second process, as described above. One or more of these changes can be made to distinguish the first process from the second process. The first process and the second process can be the same (e.g., deposition) type of process, or different (e.g., cleaning, deposition) type of process.

[0094] While exemplary embodiments of the present disclosure are described herein, it should be understood that the disclosure is not so limited. Various modifications, variations, and enhancements of the systems and methods described herein may be made without departing from the spirit and scope of the disclosure.

[0095] The subject matter of the present disclosure includes all novel and non-obvious combinations and subcombinations of the various systems, components, and configurations, and other features, functions, operations and / or properties disclosed herein, as well as any and all equivalents thereof. [Explanation of symbols]

[0096] 106 Susceptor 140 Thermal protection plate 154 Plate lift member 300 Assembly 306 Lift pin through hole 308 Lift pin through hole 318 Plate lift member through hole

Claims

1. 1. A substrate processing assembly comprising: A susceptor; a thermal protection plate disposed above the susceptor, the thermal protection plate including a first lift pin through hole extending from a top surface of the thermal protection plate to a bottom surface of the thermal protection plate; the susceptor including a second lift pin through hole and a plate lift member through hole; a plate lift member configured to slidably engage the plate lift member through hole.

2. The substrate processing assembly of claim 1 , wherein the thermal protection plate has a surface comprising polished silicon carbide, a polished diamond-like carbon coating, a layer of aluminum nitride, or a layer of diamond-like carbon, or a combination thereof.

3. The substrate processing assembly of claim 1 , wherein the thermal protection plate further comprises a plate lift member contact on the bottom surface.

4. The substrate processing assembly of claim 3 , wherein the plate lift member contact comprises a recess, a mating surface, a roughened surface, an attachment surface, or a fastener, or a combination thereof.

5. The substrate processing assembly of claim 1 , wherein the thermal protection plate includes features extending from the bottom surface and conforming to a shape of a mating cavity in a susceptor top surface.

6. The substrate processing assembly of claim 1 , wherein the susceptor includes a feature extending from the top surface and conforming to a shape of a mating cavity in the thermal protection plate.

7. The substrate processing assembly of claim 1 , wherein the thermal protection plate mounting surface is concave to restrict lateral movement.

8. The substrate processing assembly of claim 1 , wherein the plate lift member is coupled to an actuator.

9. 10. The substrate processing assembly of claim 1, further comprising a plurality of contacts disposed on the bottom surface of the thermal protection plate, one or more of the plurality of contacts configured to couple to one or more of the plurality of plate lift members.

10. The substrate processing assembly of claim 1 , wherein one or more of the plate lift member through holes are axially aligned with at least one of the plurality of contacts.

11. The substrate processing assembly of claim 1 , wherein the first lift pin through hole in the thermal protection plate is axially aligned with the second lift pin through hole in the susceptor.

12. The substrate processing assembly of claim 1 , wherein the thermal protection plate further comprises a mounting surface comprising a recess configured to provide circumferential support to a substrate disposed within the recess.

13. The substrate processing assembly of claim 1 , wherein the plate lift member comprises a mating surface at a tip.

14. The substrate processing assembly of claim 13 , wherein the mating surface comprises at least one of a roughened surface, an attachment surface, or a fastener, or a combination thereof.

15. The substrate processing assembly of claim 1 , wherein the thermal protection plate mounting surface comprises an upper mounting surface including sloped sidewalls to constrain lateral movement.

16. 1. A semiconductor processing method comprising: placing a substrate on a surface of a thermal protection plate above a susceptor in a chamber; contacting the susceptor with the thermal protection plate; exposing the substrate to a first process that heats the substrate to a first temperature; moving the thermal protection plate to a position where it interrupts contact with the susceptor; and cooling the substrate in response to discontinuing the contact.

17. The method of claim 16, wherein the first temperature is from about 200°C to about 600°C.

18. 17. The method of claim 16, further comprising exposing the substrate to a second process that heats the substrate to a second temperature, the second temperature being lower than the first temperature.

19. The method of claim 18, wherein the first temperature is from about 200° C. to about 600° C.

20. 20. The method of claim 19, wherein the second temperature is from about 10°C to about 200°C.

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