Substrate cleaning apparatus and substrate processing apparatus

Abstract

To enable efficient removal of particles to be removed that adhere to a substrate.SOLUTION: A substrate cleaning apparatus having a substrate rotation mechanism that holds and rotates substrates and a cleaning solution supply mechanism that supplies a rotating substrate with a cleaning solution containing coarse particles that have a diameter of 1 μm or more and that promote the removal of particles to be removed from the substrate, is provided.SELECTED DRAWING: Figure 4A

Description

[Technical field]

[0001] The present invention relates to a substrate cleaning apparatus and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a cleaning composition for use after chemical mechanical polishing, which contains organic polymer particles having an average dispersed particle size of 10 nm or more and less than 100 nm. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-47842 A [Patent Document 2] JP 2011-165751 A [Patent Document 3] Special Publication No. 2012-531748 [Patent Document 4] Japanese Patent Application Publication No. 2-252237 [Patent Document 5] Patent No. 6112330 Summary of the Invention [Problem to be solved by the invention]

[0004] To efficiently remove particles to be removed that are attached to a substrate. [Means for solving the problem]

[0005] According to one aspect of the present invention, [1] a substrate rotation mechanism that holds and rotates the substrate; a cleaning liquid supply mechanism that supplies a cleaning liquid having dispersed therein coarse particles having a diameter of 1 μm or more and that promote the removal of particles to be removed adhering to the substrate, to the rotating substrate.

[0006] According to one aspect of the present invention, [2] a substrate rotation mechanism that holds and rotates the substrate; A substrate cleaning apparatus is provided that includes a cleaning liquid supply mechanism that supplies a cleaning liquid to the rotating substrate, the cleaning liquid containing dispersed coarse particles that are larger than the particles to be removed attached to the substrate and that promote removal of the particles to be removed.

[0007] [3] In the substrate cleaning apparatus according to [1] or [2], The cleaning liquid supply mechanism may be provided with a supply hole larger than the coarse particles, and the cleaning liquid may be supplied to the substrate through the supply hole.

[0008] [4] [1] to [3], wherein the substrate cleaning apparatus comprises: The cleaning device may further include a moving mechanism for moving the cleaning liquid supply mechanism.

[0009] [5] [4] The substrate cleaning apparatus according to the present invention, The moving mechanism may move the cleaning liquid supply mechanism so that a position where the cleaning liquid is supplied moves from the center of the substrate to the outer periphery.

[0010] [6] [1] to [5], wherein the substrate cleaning apparatus comprises: The cleaning liquid supply mechanism includes: supplying the cleaning solution having a first concentration of coarse particles to a first position near a center of the substrate; The cleaning liquid having a second concentration of the coarse particles higher than the first concentration may be supplied to a second position farther from the center of the substrate than the first position.

[0011] [7] [6] The substrate cleaning apparatus according to the present invention, the cleaning liquid supply mechanism is provided with a first supply hole and a second supply hole larger than the coarse particles; the cleaning liquid, the concentration of the coarse particles of which is the first concentration, is supplied to the first position through the first supply hole; The cleaning liquid, in which the concentration of the coarse particles is the second concentration, may be supplied to the second position through the second supply hole.

[0012] [8] [7] The substrate cleaning apparatus according to the present invention, a first tank that holds the cleaning liquid in which the concentration of the coarse particles is the first concentration is connected to the first supply hole; A second tank that holds the cleaning liquid in which the concentration of the coarse particles is the second concentration may be connected to the second supply hole.

[0013] [9] [8] The substrate cleaning apparatus according to the present invention, The first tank and the second tank may be provided with an agitator that agitates the cleaning liquid.

[0014]

[10] [7] The substrate cleaning apparatus according to the present invention, a first concentration adjustment mechanism that adjusts a concentration of the coarse particles in the cleaning liquid supplied to the first supply hole so that the concentration of the coarse particles in the cleaning liquid becomes the first concentration; The cleaning liquid may further include a second concentration adjustment mechanism that adjusts the concentration of the coarse particles in the cleaning liquid supplied to the second supply hole to the second concentration.

[0015]

[11]

[10] The substrate cleaning apparatus according to the present invention, The cleaning liquid is generated by mixing a liquid supplied from a liquid supply source and a coarse particle dispersion supplied from a coarse particle supply source; the first concentration adjustment mechanism adjusts a concentration of the coarse particles in the cleaning liquid by adjusting an amount of liquid supplied from the liquid supply source and / or an amount of coarse particle-containing liquid supplied from the coarse particle supply source; The second concentration adjustment mechanism may adjust the concentration of the coarse particles in the cleaning liquid by adjusting the amount of liquid supplied from the liquid supply source and / or the amount of coarse particle-containing liquid supplied from the coarse particle supply source.

[0016]

[12] [6] The substrate cleaning apparatus according to the present invention, a moving mechanism for moving the cleaning liquid supply mechanism, With the movement of the cleaning liquid supply mechanism, When the cleaning liquid supply mechanism supplies the cleaning liquid to the first position, the concentration of the coarse particles becomes the first concentration, The cleaning liquid supply mechanism may further include a concentration adjustment mechanism that adjusts the concentration of the coarse particles to the second concentration when the cleaning liquid supply mechanism supplies the cleaning liquid to the second position.

[0017]

[13] [1] to

[12] , wherein the substrate cleaning apparatus comprises: The cleaning liquid supply mechanism includes: supplying the cleaning liquid at a first flow rate to a first location near a center of the substrate; The cleaning liquid may be supplied at a second flow rate greater than the first flow rate to a second position that is farther from the center of the substrate than the first position.

[0018]

[14]

[13] The substrate cleaning apparatus according to the present invention, the cleaning liquid supply mechanism is provided with a first supply hole and a second supply hole larger than the coarse particles; The cleaning liquid is supplied to the first position through the first supply hole at a first flow rate; The cleaning liquid may be supplied to the second position at the second flow rate through the second supply hole.

[0019]

[15]

[13] The substrate cleaning apparatus according to the present invention, a moving mechanism for moving the cleaning liquid supply mechanism, With the movement of the cleaning liquid supply mechanism, When the cleaning liquid supply mechanism supplies the cleaning liquid to the first position, the flow rate of the cleaning liquid supplied becomes the first flow rate, When the cleaning liquid supply mechanism supplies the cleaning liquid to the second position, a flow rate adjustment mechanism may be provided that adjusts the flow rate of the cleaning liquid supplied so that the flow rate of the cleaning liquid supplied becomes the second flow rate.

[0020] According to one aspect of the present invention,

[16] a substrate polishing apparatus for polishing a substrate; a first substrate cleaning device that performs roll scrub cleaning, pen scrub cleaning, and / or two-fluid jet cleaning on the substrate polished by the substrate polishing device; and a second substrate cleaning apparatus which is the substrate cleaning apparatus according to any one of [1] to

[15] and which cleans the substrate after being cleaned by the first substrate cleaning apparatus. Effect of the Invention

[0021] The particles to be removed that are attached to the substrate can be removed efficiently. [Brief description of the drawings]

[0022] [Figure 1] FIG. 2 is a diagram for explaining the mechanism of cleaning using a cleaning solution having a large particle dispersion. [Figure 2A] FIG. 1 is a diagram for explaining a first cleaning model. [Figure 2B] FIG. 13 is a diagram illustrating a second cleaning model. [Figure 2C] FIG. 13 is a diagram illustrating a third cleaning model. [Figure 2D1] FIG. 13 is a diagram illustrating a fourth cleaning model. [Figure 2D2] FIG. 13 is a diagram illustrating a fourth cleaning model. [Figure 3A] FIG. 13 is a diagram showing an experimental result showing the cleaning effect of a cleaning solution having a large particle dispersion. [Figure 3B] FIG. 13 is a diagram showing an experimental result showing the cleaning effect of a cleaning solution having a large particle dispersion. [Figure 4A]1 is a schematic top view of a substrate cleaning apparatus 100. FIG. [Figure 4B] 1 is a schematic side view of a substrate cleaning apparatus 100. FIG. [Figure 5A] FIG. 4B is a schematic top view of a substrate cleaning apparatus 100 which is a modification of the apparatus shown in FIG. 4A. [Figure 5B] FIG. 4C is a schematic side view of the substrate cleaning apparatus 100 which is a modification of the apparatus shown in FIG. 4B. [Figure 6A] FIG. 4B is a schematic top view of a substrate cleaning apparatus 100 which is a modification of the apparatus shown in FIG. 4A. [Figure 6B] FIG. 4C is a schematic side view of the substrate cleaning apparatus 100 which is a modification of the apparatus shown in FIG. 4B. [Figure 7] 2 is a diagram showing tanks 4a to 4d included in the substrate cleaning apparatus 100. FIG. [Figure 8A] FIG. 2 is a schematic diagram showing a propeller blade as an example of the agitator 40. [Figure 8B] FIG. 2 is a schematic diagram showing a flat paddle impeller, which is an example of the agitator 40. [Figure 8C] FIG. 2 is a schematic diagram showing an inclined paddle blade as an example of the agitator 40. [Figure 8D] FIG. 2 is a schematic diagram showing a flat turbine blade, which is an example of the agitator 40. [Figure 9] FIG. 1 is a diagram showing a schematic configuration of a substrate cleaning apparatus 100. [Figure 10] FIG. 4 is a schematic diagram showing an example of the internal configuration of a concentration adjustment mechanism 14a. [Figure 11A] FIG. 4B is a schematic top view of a substrate cleaning apparatus 100 which is a modification of the apparatus shown in FIG. 4A. [Figure 11B] FIG. 4C is a schematic side view of the substrate cleaning apparatus 100 which is a modification of the apparatus shown in FIG. 4B. [Figure 12] FIG. 1 is a diagram showing a schematic configuration of a substrate cleaning apparatus 100. [Figure 13A] 1 is a flow chart illustrating an example of a substrate cleaning procedure. [Figure 13B] 13B is a flowchart showing a substrate cleaning procedure that is a variation of FIG. 13A. [Figure 13C] 13B is a flowchart showing a substrate cleaning procedure that is a variation of FIG. 13A. [Figure 13D] 13B is a flowchart showing a substrate cleaning procedure that is a variation of FIG. 13A. [Figure 14A] 11 is a flow chart illustrating another example of a substrate cleaning procedure. [Figure 14B] 14B is a flowchart showing a substrate cleaning procedure that is a variation of FIG. 14A. [Figure 14C] 14B is a flowchart showing a substrate cleaning procedure that is a variation of FIG. 14A. [Figure 14D] 14B is a flowchart showing a substrate cleaning procedure that is a variation of FIG. 14A. [Figure 15] FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] Hereinafter, an embodiment of the present invention will be specifically described with reference to the drawings.

[0024] When cleaning a substrate (such as a semiconductor substrate or a glass substrate), a cleaning solution that contains as few particles as possible is usually used, because if particles are contained in the cleaning solution, they may become a source of contamination for the substrate.

[0025] However, the inventors discovered that by supplying to the substrate a cleaning liquid in which coarse particles having a diameter of 1 μm or more are deliberately dispersed (hereinafter referred to as a "coarse particle-dispersed cleaning liquid"), the target particles adhering to the substrate can be efficiently removed.

[0026] Figure 1 is a diagram explaining the mechanism of cleaning using a coarse particle dispersion cleaning solution. It shows how a coarse particle dispersion cleaning solution is supplied while rotating a substrate with minute particles to be removed adhering to its surface. The rotation speed of the substrate is about 100 rpm, and the supply rate of the coarse particle dispersion cleaning solution is about 1 L / min. The speed of movement in the circumferential direction of the coarse particle dispersion cleaning solution supplied onto the substrate is slower the closer it is to the substrate, and faster the further away it is from the substrate. The liquid layer that moves particularly slowly, about 10 μm from the substrate, is called the viscous bottom layer.

[0027] The coarse particles dispersed in the coarse particle-dispersed cleaning solution are carried along by the faster moving liquid layer and approach the particles to be removed. This causes the particles to be removed to detach from the substrate surface (details will be described later). The movement of the coarse particles also agitates the cleaning solution near the substrate, causing the slow-moving viscous bottom layer and the faster-moving liquid layer to mix up and down (vertically). This causes the particles to be removed that have detached from the substrate to move to the faster-moving liquid layer and be discharged.

[0028] A cleaning model that can be considered as the principle by which large particles detach the particles to be removed from the substrate surface will be described.

[0029] 2A is a diagram illustrating a first cleaning model. As shown in the figure, when the particles to be removed and the coarse particles are charged with opposite polarities, the particles to be removed electrically adhere to the coarse particles, causing the particles to be removed to detach from the substrate surface.

[0030] 2B is a diagram illustrating a second cleaning model. As shown in the figure, a coarse particle collide with a target particle with great force, and the target particle physically adheres to the coarse particle, causing the target particle to detach from the substrate surface.

[0031] 2C is a diagram illustrating the third cleaning model. As shown in the figure, large particles collide with the substrate surface with force, stirring the liquid layer near the substrate in the vertical direction, which causes the particles to be removed to be lifted up and detached from the substrate surface.

[0032] 2D1 and 2D2 are diagrams (front view and plan view, respectively) explaining the fourth cleaning model. As shown in FIG. 2D2, when a coarse particle collides with the substrate surface with force and passes through, the coarse particle pushes out the particles to be removed, and the particles to be removed are detached from the substrate surface.

[0033] FIG. 3A shows the results of an experiment showing the cleaning effect of a cleaning solution containing dispersed coarse particles. According to an experiment conducted by the inventors, the number of particles to be removed remaining on a substrate when the substrate is cleaned with a cleaning solution containing dispersed coarse particles having a diameter of about 1.5 μm is about 29.1% of the number of particles to be removed remaining on the substrate when the substrate is cleaned with a cleaning solution that does not contain coarse particles. Therefore, as long as the diameter of the coarse particles is at least 1 μm or more, there is a cleaning effect. Also, there is an effect even if the diameter of the coarse particles is 100 nm or more.

[0034] 3B shows another experimental result showing the cleaning effect of a cleaning solution containing dispersed coarse particles. According to an experiment conducted by the inventors, the number of particles to be removed remaining on a substrate when the substrate is cleaned with a cleaning solution containing dispersed coarse particles having a diameter of about 10 μm is about 22.8% of the number of particles to be removed remaining on the substrate when the substrate is cleaned with a cleaning solution that does not contain coarse particles. Therefore, the cleaning effect is achieved even when the diameter of the coarse particles is 10 μm or more.

[0035] The coarse particles may be any particles that can promote the removal of the particles to be removed. For example, particles of acrylic, silica, zirconia, alumina, polypropylene, etc. can be used as the coarse particles. In order to prevent the substrate surface from being scratched, the coarse particles may be resin, or particles of iron oxide, etc., coated with resin or silica. Furthermore, the coarse particles may be soluble polymers that dissolve in the cleaning solution by heat or chemicals so that the coarse particles do not remain on the substrate after cleaning.

[0036] The diameter of the coarse particles does not necessarily have to be 1 μm or more, as long as it is larger than the particles to be removed. There is no limitation on the shape of the coarse particles, and they may be, for example, spherical or cylindrical. The surface of the coarse particles may be porous, or may have minute irregularities. The specific gravity of the coarse particles is preferably 1.15 or more, and for example, acrylic particles with a specific gravity of about 1.2 are suitable. The larger the specific gravity of the coarse particles, the more they can approach the vicinity of the substrate without being discharged by the liquid flow, and the more effective they can be expected in the vicinity of the substrate.

[0037] Also, appropriate coarse particles may be used depending on the particles to be removed. For example, coarse particles charged with a polarity different from that of the particles to be removed may be used. As a more specific example, when the particles to be removed are negatively charged fine silica particles, positively charged alumina particles are suitable as the particles to be removed. This promotes electrical adhesion between the coarse particles and the particles to be removed (see FIG. 2A).

[0038] Furthermore, when the cleaning solution is acidic, an acid-resistant material is preferable, and when the cleaning solution is alkaline, an alkali-resistant material is preferable.

[0039] Next, an example of an apparatus configuration for carrying out the above-mentioned cleaning will be described. 4A and 4B are a schematic top view and a schematic side view, respectively, of substrate cleaning apparatus 100. Substrate cleaning apparatus 100 includes a substrate rotation mechanism 1 and a cleaning liquid supply mechanism 2. Substrate rotation mechanism 1 holds and rotates substrate W. Cleaning liquid supply mechanism 2 supplies the cleaning liquid dispersed with coarse particles to the rotating substrate W. In detail, cleaning liquid supply mechanism 2 is provided with a supply hole larger than the diameter of the coarse particles, and the cleaning liquid dispersed with coarse particles is supplied through this supply hole.

[0040] As a specific configuration example, the cleaning liquid supply mechanism 2 has one or more nozzles (which may be sprays; the same applies below). More specifically, the cleaning liquid supply mechanism 2 may have nozzles 2a-2d provided above the substrate W, each having a downward-facing supply hole at its tip. Alternatively, the cleaning liquid supply mechanism 2 may have nozzles 2e-2h provided below the substrate W, each having an upward-facing supply hole at its tip.

[0041] There is no particular limitation on the arrangement position and number of the supply holes (nozzles) in the cleaning liquid supply mechanism 2. As an example, as shown in FIG. 4A and FIG. 4B, the cleaning liquid supply mechanism 2 may have a plurality of nozzles arranged in a row along the radius of the substrate W (i.e., from above / below the center of the substrate W to above / below the edge of the substrate W). As another example, as shown in FIG. 5A and FIG. 5B, the cleaning liquid supply mechanism 2 may have a plurality of nozzles arranged in a row along the diameter of the substrate W (i.e., from above / below the edge of the substrate W via above / below the center of the substrate W to above / below the edge on the opposite side). As yet another example, as shown in FIG. 6A and FIG. 6B, the cleaning liquid supply mechanism 2 may have a plurality of nozzles arranged in a row along one diameter of the substrate W and a plurality of nozzles arranged in a row along another diameter. By increasing the number of supply holes (nozzles), the collision effect of coarse particles can be increased.

[0042] Here, the rotation speed of the outer periphery of the substrate W is faster than the rotation speed near the center of the substrate W. Therefore, in order to prevent the concentration of coarse particles from becoming thin even in the outer periphery of the substrate W, it is desirable to supply a coarse particle-dispersed cleaning liquid having a higher concentration of coarse particles closer to the outer periphery of the substrate W.

[0043] To achieve this, the concentration of coarse particles in the cleaning liquid dispersed with coarse particles from the supply holes (nozzles) supplying the cleaning liquid dispersed with coarse particles to the outer periphery of the substrate W may be made higher than the concentration of coarse particles in the cleaning liquid dispersed with coarse particles from the supply holes (nozzles) supplying the cleaning liquid dispersed with coarse particles to the vicinity of the center of the substrate W. In the example of Figures 4A and 4B, the cleaning liquid dispersed with coarse particles may be supplied in the order of nozzles 2a to 2d and in the order of nozzles 2e to 2h so that the concentration of coarse particles becomes higher.

[0044] As a first configuration example for this purpose, as shown in Fig. 7, a substrate cleaning apparatus 100 may include tanks 4a to 4d connected to the nozzles 2a to 2d, respectively. The tanks 4a to 4d hold cleaning solutions dispersed with coarse particles in the order of increasing concentration of coarse particles. The cleaning solutions dispersed with coarse particles from the tanks 4a to 4d are supplied to the substrate W via supply lines 5a to 5d and supply holes of the nozzles 2a to 2d, respectively.

[0045] For the nozzle 2e provided below the substrate W, the supply line 5a of the tank 4a may be branched, with one end connected to the nozzle 2a and the other connected to the nozzle 2e. This allows the nozzles 2a and 2e to supply coarse particle-dispersed cleaning liquids having the same concentration of coarse particles. Alternatively, another tank (not shown) may be provided that is connected to the nozzle 2e. This allows the nozzles 2a and 2e to supply coarse particle-dispersed cleaning liquids having different concentrations of coarse particles. The same applies to the nozzles 2f to 2h.

[0046] Each of the tanks 4a to 4d preferably has an agitator 40 for agitating the cleaning solution dispersed with coarse particles held therein so that the cleaning solution dispersed with coarse particles is stored in a state in which the coarse particles are dispersed. The agitator 40 is, for example, a propeller blade (FIG. 8A), a flat paddle blade (FIG. 8B), an inclined paddle blade (FIG. 8C), or a flat turbine blade (FIG. 8D).

[0047] 9, a substrate cleaning apparatus 100 may include a pure water supply source 11, a chemical supply source 12, a coarse particle supply source 13, and concentration adjustment mechanisms 14a to 14d. The pure water supply source 11, the chemical supply source 12, and the coarse particle supply source 13 are commonly connected to the concentration adjustment mechanisms 14a to 14d.

[0048] The concentration adjustment mechanism 14a is connected to the nozzles 2a and 2e. The concentration adjustment mechanism 14a adjusts the concentration of coarse particles in the coarse particle-dispersed cleaning liquid supplied to the supply holes of the nozzles 2a and 2e to a desired concentration. More specifically, the concentration of coarse particles is adjusted by adjusting the supply amount of pure water from the pure water supply source 11, the supply amount of chemical liquid from the chemical liquid supply source 12, and / or the supply amount of the coarse particle-containing liquid from the coarse particle supply source 13.

[0049] The concentration adjustment mechanism 14b is connected to the nozzles 2b and 2f. The concentration adjustment mechanism 14b adjusts the concentration of the coarse particles in the coarse particle-dispersed cleaning liquid supplied to the supply holes of the nozzles 2b and 2f to a desired concentration (more specifically, a concentration higher than the concentration of the coarse particles in the coarse particle-dispersed cleaning liquid supplied to the nozzles 2a and 2e). Similarly, the concentration adjustment mechanism 11c is connected to the nozzles 2c and 2g, and the concentration adjustment mechanism 14d is connected to the nozzles 2d and 2h.

[0050] The pure water supply source 11 and the chemical supply source 12 can be collectively referred to as a liquid supply source. The liquid supply source may include only one of the pure water supply source 11 and the chemical supply source 12, or may include two or more chemical supply sources.

[0051] 10 is a schematic diagram showing an example of the internal configuration of the concentration adjustment mechanism 14a. The concentration adjustment mechanism 14a has a pure water supply line 21, a chemical liquid supply line 22, a coarse particle supply line 23, a coarse particle-dispersed cleaning liquid supply line 24, flow rate regulators 31 to 33, and a four-way valve 34.

[0052] The pure water supply line 21 is connected to the pure water supply source 11. The pure water supply line 21 is provided with a flow regulator 31 for adjusting the flow rate of the pure water flowing therethrough. The flow regulator 31 is composed of a mass flow controller that performs closed-loop control to a flow rate range of 400 to 2000 ml / min, for example, and a supply valve installed downstream of the mass flow controller. The flow regulator 31 is adjusted by a control device (not shown) so that the flow rate of the pure water becomes a desired value.

[0053] The chemical supply line 22 is connected to the chemical supply source 12. The chemical supply line 22 is provided with a flow regulator 32 that regulates the flow rate of the chemical (e.g., ammonia water or hydrogen peroxide water) flowing therethrough. The flow regulator 32 is composed of a mass flow controller that performs closed-loop control at a flow rate in the range of 20 to 100 ml / min, for example, a main valve provided upstream of the mass flow controller, and a supply valve provided downstream of the mass flow controller. The flow regulator 32 is adjusted by a control device (not shown) so that the flow rate of the chemical becomes a desired value.

[0054] The coarse particle supply line 23 is connected to the coarse particle supply source 13. The coarse particle supply line 23 is provided with a flow rate regulator 33 for adjusting the flow rate of the coarse particle dispersion liquid flowing therethrough. The flow rate regulator 33 is composed of a mass flow controller that performs closed-loop control at a flow rate in the range of 20 to 100 ml / min, for example, a main valve provided upstream thereof, and a supply valve provided downstream thereof. The flow rate regulator 33 is adjusted by a control device (not shown) so that the flow rate of the coarse particle dispersion liquid becomes a desired value.

[0055] The four-way valve 34 has three inlets and one outlet. The three inlets are connected to a pure water supply line 21, a chemical supply line 22, and a coarse particle supply line 23. The outlet is connected to a coarse particle-dispersed cleaning liquid supply line 24.

[0056] The coarse particle-dispersed cleaning liquid supply line 24 branches into two, one of which is connected to the nozzle 2a and the other of which is connected to the nozzle 2e.

[0057] With this configuration, the pure water, the chemical solution, and the coarse particle dispersion liquid, the flow rates of which are adjusted, flow into the inside from the inlet of the four-way valve 34. Then, these are mixed to generate the coarse particle dispersion cleaning liquid, which flows out from the outlet of the four-way valve 34 to the coarse particle dispersion cleaning liquid supply line 24. Furthermore, the coarse particle dispersion cleaning liquid is supplied from the coarse particle dispersion cleaning liquid supply line 24 to the nozzles 2a and 2e.

[0058] The concentration adjustment mechanism 14a only needs to have at least one of the flow rate regulators 31 to 33. The concentration adjustment mechanisms 14b to 14d may also have a similar configuration.

[0059] As described above, the rotation speed of the outer periphery of the substrate W is faster than the rotation speed of the center of the substrate W. Therefore, in order to supply a sufficient amount of the coarse particle-dispersed cleaning liquid even to the outer periphery of the substrate W, it is desirable to increase the flow rate of the coarse particle-dispersed cleaning liquid (the amount of the coarse particle-dispersed cleaning liquid supplied per unit time) supplied closer to the outer periphery of the substrate W.

[0060] To achieve this, the flow rate of the coarse particle-dispersed cleaning liquid supplied from the supply holes (nozzles) supplying the coarse particle-dispersed cleaning liquid to the outer periphery of the substrate W may be made greater than the flow rate of the coarse particle-dispersed cleaning liquid supplied from the supply holes (nozzles) supplying the coarse particle-dispersed cleaning liquid to the vicinity of the center of the substrate W. In the example of Figures 4A and 4B, the flow rates of the coarse particle-dispersed cleaning liquid supplied may be made greater in the order of nozzles 2a to 2d and then nozzles 2e to 2h.

[0061] In the above, the cleaning liquid supply mechanism 2 has a plurality of supply holes (nozzles), but the number of supply holes (nozzles) in the cleaning liquid supply mechanism 2 may be one. In this case, as shown in Figs. 11A and 11B, the substrate cleaning apparatus 100 desirably includes a moving mechanism 3 that moves the cleaning liquid supply mechanism 2. There are no particular limitations on the manner of movement. For example, the moving mechanism 3 may move the cleaning liquid supply mechanism 2 so as to scan from directly above or directly below the substrate W to the outer periphery. In other words, the moving mechanism 3 may move the cleaning liquid supply mechanism 2 so that the position where the coarse particle-dispersed cleaning liquid is supplied moves from the center of the substrate W to the outer periphery. Alternatively, the moving mechanism 3 may swing the cleaning liquid supply mechanism 2.

[0062] As described above, it is desirable to supply a coarse particle-dispersed cleaning liquid in which the concentration of coarse particles is higher closer to the outer periphery of the substrate W. To achieve this, as shown in Fig. 12, the substrate cleaning apparatus 100 may include a pure water supply source 11, a chemical solution supply source 12, a coarse particle supply source 13, a concentration adjustment mechanism 14, and a control unit 6. The control unit 6 controls the moving mechanism 3 and the concentration adjustment mechanism 14.

[0063] 10 (however, the coarse particle-dispersed cleaning liquid supply line 24 is not branched). The concentration adjustment mechanism 14 adjusts the concentration of coarse particles so that the concentration of coarse particles is relatively low when the cleaning liquid supply mechanism 2 supplies the coarse particle-dispersed cleaning liquid to a position near the center of the substrate W, and the concentration of coarse particles is relatively high when the cleaning liquid supply mechanism 2 supplies the coarse particle-dispersed cleaning liquid to a position on the outer periphery of the substrate W, in accordance with the movement of the cleaning liquid supply mechanism 2.

[0064] In other words, the control unit 6 controls the moving mechanism 3 and the concentration adjustment mechanism 14 so that the concentration of coarse particles is relatively low when the cleaning liquid supply mechanism 2 supplies the cleaning liquid dispersed with coarse particles to a position near the center of the substrate W, and so that the concentration of coarse particles is relatively high when the cleaning liquid supply mechanism 2 supplies the cleaning liquid dispersed with coarse particles to a position on the outer periphery of the substrate W.

[0065] As described above, it is desirable to increase the flow rate of the coarse particle dispersion cleaning liquid supplied closer to the outer periphery of the substrate W. That is, a moving mechanism 3 shown in Figures 11A and 11B may be provided, and a flow rate adjustment mechanism (not shown) may be provided to adjust the flow rate of the coarse particle dispersion liquid supplied so that the flow rate is relatively low when the cleaning liquid supply mechanism 2 supplies the coarse particle dispersion cleaning liquid to a position near the center of the substrate W, and the flow rate is relatively high when the cleaning liquid supply mechanism 2 supplies the coarse particle dispersion cleaning liquid to a position on the outer periphery of the substrate W.

[0066] As described above, since the substrate cleaning apparatus 100 cleans the substrate W using the cleaning liquid with coarse particles dispersed therein, the particles to be removed that are attached to the substrate W can be removed efficiently.

[0067] In each drawing, the cleaning liquid supply mechanism 2 is provided above and below the substrate W, and the cleaning liquid with coarse particle dispersion is supplied to the upper and lower surfaces of the substrate W. However, the cleaning liquid supply mechanism 2 may be provided only above or below the substrate W, and the cleaning liquid with coarse particle dispersion may be supplied to only one surface of the substrate W.

[0068] In addition, although each figure shows an embodiment in which the substrate W is held in a horizontal direction and the cleaning liquid with dispersed coarse particles is supplied in a vertical direction, the supply direction is not particularly limited. For example, the substrate W may be held in a vertical direction and the cleaning liquid with dispersed coarse particles may be supplied in a horizontal direction. In other words, the cleaning liquid with dispersed coarse particles may be supplied in a direction substantially perpendicular to the substrate W.

[0069] Next, a substrate cleaning process will be exemplified. The above-described substrate cleaning method can be applied to cleaning a substrate having polishing debris or polishing liquid attached thereto as particles to be removed after polishing in a substrate polishing apparatus in a CMP (Chemical Mechanical Polishing) apparatus.

[0070] 13A is a flow chart showing an example of a substrate cleaning procedure, in which cleaning with a cleaning solution having coarse particles dispersed therein is performed after the final cleaning and before the drying process.

[0071] After polishing, the substrate is first subjected to a first roll scrub cleaning (step S1) and a second roll scrub cleaning (step S2) using a roll-type cleaning tool. Next, a pen scrub cleaning is performed using a pen-type cleaning tool (step S3). After that, a chemical rinse is performed in which a chemical solution is supplied while the substrate is rotated (step S4). Then, cleaning is performed using the above-mentioned coarse particle dispersion cleaning solution (step S5). Furthermore, a pure water rinse is performed in which pure water is supplied while the substrate is rotated (step S6).

[0072] However, various modifications are possible. For example, as shown in Fig. 13B, two-fluid jet cleaning (step S3') using a mixture of liquid and gas may be performed instead of the pen scrub cleaning. Alternatively, as shown in Fig. 13C and Fig. 13D, the second roll scrub cleaning (step S2) may be omitted.

[0073] In any case, in substrate cleaning, roll scrub cleaning, pen scrub cleaning and / or two-fluid jet cleaning is performed, and then cleaning using a cleaning liquid containing dispersed coarse particles is performed.

[0074] As described above, when cleaning with the cleaning solution containing dispersed coarse particles, it is better to rotate the substrate at a higher speed in order to reduce the thickness of the film. Specifically, it is better to rotate the substrate at a higher speed when cleaning with the cleaning solution containing dispersed coarse particles than when performing the chemical rinsing (step S4) or the pure water rinsing (step S6).

[0075] 14A is a flow chart showing another example of a substrate cleaning procedure, in which cleaning using a cleaning solution with dispersed coarse particles is performed after each scrub cleaning.

[0076] After polishing, the substrate is first subjected to a first roll scrub cleaning using a roll-type cleaning tool (step S11). Next, cleaning is performed using a cleaning solution containing dispersed coarse particles (step S12). After that, a pure water rinse is performed by supplying pure water while rotating the substrate (step S13).

[0077] Further, a second roll scrub cleaning is performed (step S14), followed by cleaning using a cleaning solution containing dispersed coarse particles (step S15).

[0078] Further, pen scrub cleaning is performed using a pen-shaped cleaning tool (step S16). Next, chemical rinsing is performed by supplying a chemical solution while rotating the substrate (step S17). After that, cleaning is performed using a cleaning solution containing dispersed coarse particles (step S18). Then, pure water rinsing is performed (step S19).

[0079] However, various modifications are possible. For example, as shown in Fig. 14B, two-fluid jet cleaning (step S16') may be performed instead of pen scrubbing. Alternatively, as shown in Fig. 14C and Fig. 14D, the second roll scrubbing (step S14) and the associated cleaning using a cleaning solution containing dispersed coarse particles (step S15) may be omitted.

[0080] 15 is a diagram showing a schematic configuration of a substrate processing apparatus having the above-mentioned substrate cleaning apparatus 100. This substrate processing apparatus includes a substrate polishing apparatus 41, one or more substrate cleaning apparatuses 42, the substrate cleaning apparatus 100, a substrate drying apparatus 43, and a substrate transport apparatus 44. The substrate processing apparatus is, for example, a CMP apparatus.

[0081] After being polished by the substrate polishing apparatus 41, one or more substrate cleaning apparatuses 42 perform roll scrub cleaning, pen scrub cleaning, and / or two-fluid jet cleaning of the substrate (for example, steps S1 to S3 in FIG. 13A). The substrate after cleaning is cleaned by the substrate cleaning apparatus 100 using a cleaning liquid containing dispersed coarse particles. The substrate after cleaning may be roll scrubbed, pen scrubbed, and / or two-fluid jet cleaning by one or more substrate cleaning apparatuses 42 (for example, steps S14, S16 in FIG. 13A). The substrate after cleaning is dried by the substrate drying apparatus 43. The substrate transport apparatus 44 transports the substrate between each apparatus.

[0082] Based on the above description, a person skilled in the art may be able to conceive additional effects and various modifications of the present invention, but the aspects of the present invention are not limited to the individual embodiments described above. Various additions, modifications, and partial deletions are possible within the scope of the conceptual idea and intent of the present invention derived from the contents defined in the claims and their equivalents.

[0083] For example, what is described in this specification as one device (or member, the same applies below) (including what is depicted in the drawings as one device) may be realized by multiple devices. Conversely, what is described in this specification as multiple devices (including what is depicted in the drawings as multiple devices) may be realized by one device. Alternatively, some or all of the means or functions included in one device may be included in another device.

[0084] Furthermore, not all of the features described in this specification are essential requirements, and in particular, any feature described in this specification but not included in the claims may be considered as optional additional features.

[0085] It should be noted that the applicant is merely aware of the inventions disclosed in the documents in the "Prior Art Documents" column of this specification, and the present invention does not necessarily aim to solve the problems of the inventions disclosed in the documents. The problems that the present invention aims to solve should be identified by taking into consideration the entire specification. For example, if the specification states that a specific effect is achieved by a specific configuration, it can also be said that the problem that is the reverse of the specific effect is solved. However, it is not necessarily intended that such a specific configuration is an essential requirement. [Explanation of symbols]

[0086] 1 Substrate rotation mechanism 2. Cleaning fluid supply mechanism 2a~2h Nozzle (or spray) 3 Moving mechanism 4a~4d Tank 40 Mixer 5a~5d Supply lines 6. Control Unit 11 Pure water source 12 Chemical supply source 13 Coarse particle source 14,14a~14d Density adjustment mechanism 21 Pure water supply line 22 Chemical supply line 23 Coarse particle supply line 24 Coarse particle dispersion cleaning solution supply line 31~33 Flow regulator 34 Four-way valve 41 Substrate polishing equipment 42 Substrate cleaning equipment 43 Substrate drying equipment 44 Substrate transport device 100 Substrate cleaning device

Claims

1. a substrate rotation mechanism that holds and rotates the substrate; a cleaning liquid supply mechanism that supplies a cleaning liquid having dispersed therein coarse particles having a diameter of 1 μm or more and that promote the removal of particles to be removed adhering to the substrate, to the rotating substrate.

2. a substrate rotation mechanism that holds and rotates the substrate; a cleaning liquid supply mechanism that supplies a cleaning liquid to the rotating substrate, the cleaning liquid containing dispersed coarse particles that are larger than the particles to be removed attached to the substrate and that promote removal of the particles to be removed.

3. 3. The substrate cleaning apparatus according to claim 1, wherein the cleaning liquid supply mechanism is provided with a supply hole larger than the coarse particles, and the cleaning liquid is supplied to the substrate through the supply hole.

4. The substrate cleaning apparatus according to claim 1 , further comprising a moving mechanism for moving the cleaning liquid supply mechanism.

5. The substrate cleaning apparatus according to claim 4 , wherein the moving mechanism moves the cleaning liquid supply mechanism so that a position where the cleaning liquid is supplied moves from a center of the substrate to an outer periphery thereof.

6. The cleaning liquid supply mechanism includes: supplying the cleaning solution having a first concentration of coarse particles to a first position near a center of the substrate; 3. The substrate cleaning apparatus according to claim 1, wherein the cleaning liquid having a second concentration of the coarse particles higher than the first concentration is supplied to a second position farther from the center of the substrate than the first position.

7. the cleaning liquid supply mechanism is provided with a first supply hole and a second supply hole larger than the coarse particles; the cleaning liquid, the concentration of the coarse particles of which is the first concentration, is supplied to the first position through the first supply hole; The substrate cleaning apparatus according to claim 6 , wherein the cleaning liquid having the second concentration of coarse particles is supplied to the second position through the second supply hole.

8. a first tank that holds the cleaning liquid in which the concentration of the coarse particles is the first concentration is connected to the first supply hole; The substrate cleaning apparatus according to claim 7 , wherein the second supply hole is connected to a second tank that holds the cleaning liquid having the second concentration of the coarse particles.

9. The substrate cleaning apparatus according to claim 8 , wherein the first tank and the second tank are provided with an agitator for agitating the cleaning liquid.

10. a first concentration adjustment mechanism that adjusts a concentration of the coarse particles in the cleaning liquid supplied to the first supply hole so that the concentration of the coarse particles in the cleaning liquid becomes the first concentration; 8. The substrate cleaning apparatus according to claim 7, further comprising: a second concentration adjustment mechanism that adjusts a concentration of the coarse particles in the cleaning liquid supplied to the second supply hole to the second concentration.

11. The cleaning liquid is generated by mixing a liquid supplied from a liquid supply source and a coarse particle dispersion supplied from a coarse particle supply source; the first concentration adjustment mechanism adjusts a concentration of the coarse particles in the cleaning liquid by adjusting an amount of liquid supplied from the liquid supply source and / or an amount of coarse particle-containing liquid supplied from the coarse particle supply source; 11. The substrate cleaning apparatus of claim 10, wherein the second concentration adjustment mechanism adjusts the concentration of the coarse particles in the cleaning liquid by adjusting the amount of liquid supplied from the liquid supply source and / or the amount of coarse particle-containing liquid supplied from the coarse particle supply source.

12. a moving mechanism for moving the cleaning liquid supply mechanism, With the movement of the cleaning liquid supply mechanism, When the cleaning liquid supply mechanism supplies the cleaning liquid to the first position, the concentration of the coarse particles becomes the first concentration, 7. The substrate cleaning apparatus according to claim 6, further comprising a concentration adjusting mechanism that adjusts a concentration of the coarse particles to the second concentration when the cleaning liquid supply mechanism supplies the cleaning liquid to the second position.

13. The cleaning liquid supply mechanism includes: supplying the cleaning liquid at a first flow rate to a first location near a center of the substrate; 3 . The substrate cleaning apparatus according to claim 1 , further comprising: a second flow rate of the cleaning liquid, the second flow rate being greater than the first flow rate, supplied to a second position that is farther from the center of the substrate than the first position.

14. the cleaning liquid supply mechanism is provided with a first supply hole and a second supply hole larger than the coarse particles; The cleaning liquid is supplied to the first position through the first supply hole at a flow rate of the first flow rate; The substrate cleaning apparatus of claim 13 , wherein the cleaning liquid is supplied to the second location through the second supply hole at the second flow rate.

15. a moving mechanism for moving the cleaning liquid supply mechanism, With the movement of the cleaning liquid supply mechanism, When the cleaning liquid supply mechanism supplies the cleaning liquid to the first position, the flow rate of the cleaning liquid supplied becomes the first flow rate, 14. The substrate cleaning apparatus of claim 13, further comprising a flow rate adjustment mechanism that adjusts a flow rate of the cleaning liquid supplied so that a flow rate of the cleaning liquid supplied becomes the second flow rate when the cleaning liquid supply mechanism supplies the cleaning liquid to the second position.

16. a substrate polishing apparatus for polishing a substrate; a first substrate cleaning device that performs roll scrub cleaning, pen scrub cleaning, and / or two-fluid jet cleaning on the substrate polished by the substrate polishing device; and a second substrate cleaning apparatus which is the substrate cleaning apparatus according to claim 1 or 2 and which cleans the substrate after being cleaned by the first substrate cleaning apparatus.

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