Die bonding apparatus, mounting method, and method for manufacturing semiconductor device

Abstract

To provide a technique that enables surface activated bonding between a die and a substrate.SOLUTION: A die bonding apparatus includes: a first bonding head that picks up a die; a first bonding stage that holds a substrate; and a plasma irradiator that irradiates, with plasma, the surface of the die picked up by the first bonding head and the surface of the substrate held by the first bonding stage.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a die bonding apparatus, and is applicable, for example, to a flip chip bonder that performs surface activated bonding. [Background technology]

[0002] Die bonding equipment (semiconductor manufacturing equipment, mounting equipment) includes a flip-chip bonder that picks up a die having bumps on its surface that has been separated from a wafer, flips the picked-up die over and bonds it face-down to a substrate (for example, JP 2023-45346 A). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2023-45346 A Summary of the Invention [Problem to be solved by the invention]

[0004] The object of the present disclosure is to provide a technology capable of surface activation bonding of a die and a substrate. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0005] A brief overview of representative aspects of this disclosure is as follows. That is, the die bonding apparatus comprises a first bond head that picks up a die, a first bond stage that holds a substrate, and a plasma irradiator that irradiates with plasma the surface of the die picked up by the first bond head and the surface of the substrate held by the first bond stage. Effect of the Invention

[0006] According to the present disclosure, surface activated bonding is possible. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a top view showing an outline of a flip chip bonder according to an embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view showing a main part of the wafer supply unit shown in FIG. [Diagram 3] FIG. 3 is a schematic front view of the periphery of a pickup unit in the flip chip bonder shown in FIG. [Figure 4] FIG. 4 is a schematic side view of a temporary compression bonding portion of the bonding portion in the flip chip bonder shown in FIG. [Diagram 5] FIG. 5 is a schematic side view of a main compression bonding portion of the bonding section in the flip chip bonder shown in FIG. [Figure 6] FIG. 6 is a block diagram showing a schematic configuration of a control system of the flip chip bonder shown in FIG. [Figure 7] FIG. 7 is a flow chart showing a bonding method performed by the flip chip bonder shown in FIG. [Figure 8] FIG. 8 is a diagram showing the configuration of the plasma irradiator shown in FIG. [Figure 9] FIG. 9 is a diagram for explaining a plasma irradiation method in the first bonding portion. [Figure 10] FIG. 10 is a diagram for explaining a plasma irradiation method in the first bonding portion. [Figure 11] FIG. 11 is a diagram for explaining a plasma irradiation method in the first modified example. [Figure 12] FIG. 12 is a diagram for explaining a plasma irradiation method in the first modified example. [Figure 13] FIG. 13 is a diagram for explaining a plasma irradiation method in the second modified example. [Figure 14] FIG. 14 is a diagram for explaining a plasma irradiation method in the second modified example. [Figure 15]15(a) and 15(b) are views for explaining the bonding step in the third modified example. [Figure 16] 16(a) and 16(b) are diagrams illustrating the bonding step in the third modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments will be described with reference to the drawings. However, in order to clarify the description, the following description and drawings are omitted and simplified as appropriate. In addition, the same components are given the same reference numerals, and repeated description may be omitted. In addition, in order to clarify the description, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment.

[0009] The configuration of a flip chip bonder as an embodiment of a die bonding apparatus will be described with reference to Figs. 1 to 5. Fig. 1 is a schematic top view showing an example of the configuration of a flip chip bonder in an embodiment. Fig. 2 is a schematic cross-sectional view showing a main part of a wafer supply unit shown in Fig. 1. Fig. 3 is a schematic front view of the periphery of a pickup unit in the flip chip bonder shown in Fig. 1. Fig. 4 is a schematic side view of a temporary compression part of a bonding part in the flip chip bonder shown in Fig. 1. Fig. 5 is a schematic side view of a main compression part of a bonding part in the flip chip bonder shown in Fig. 1.

[0010] 1, the flip chip bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-rear direction of the flip chip bonder 1, the X2-X1 direction is the left-right direction, and the Z1-Z2 direction is the up-down direction. The wafer supply unit 10 is disposed on the front side of the flip chip bonder 1, and the bonding unit 40 is disposed on the rear side.

[0011] The wafer supply section 10 includes a wafer cassette lifter 11 , a wafer holder 12 , and a peeling unit 13 .

[0012] A wafer cassette lifter 11 moves a wafer cassette (not shown), in which a plurality of wafer rings WR are stored, up and down to the wafer transport height. A wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) removes the wafer rings WR from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0013] A wafer W is adhered (attached) onto a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is held by a wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the dies D as the workpiece are semiconductor chips, glass chips, or MEMS (Micro Electro Mechanical Systems).

[0014] As shown in Fig. 2, the wafer holder 12 has an expand ring 15 that holds the wafer ring WR, and a support ring 17 that horizontally positions the dicing tape DT. The wafer holder 12 moves in the X1-X2 and Y1-Y2 directions by a drive unit (not shown), and moves the die D to be picked up to the position of the peeling unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 moves in the vertical direction by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

[0015] 1 and 3, the pickup unit 20 has a pickup head 21 and a wafer recognition camera 24. The pickup head 21 is provided with a collet 22 that adsorbs and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10, and places it on the intermediate stage 31 with the surface (front surface) of the die D on which the metal electrode De is formed facing up. The pickup head 21 moves in the Z1-Z2 direction, the X1-X2 direction, and the Y1-Y2 direction.

[0016] The wafer recognition camera 24 confirms the pick-up position of the die D to be picked up from the wafer W and inspects the surface of the die D.

[0017] 1 and 3, the intermediate stage section 30 has an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 has a flip stage 31a and a pickup stage 31b. The die D is placed on the flip stage 31a with its front surface facing up, and the flip stage 31a is inverted to place the die D on the pickup stage 31b with its front surface facing down. The placed die D is temporarily held by the pickup stage 31b.

[0018] As shown in FIG. 1, the bonding section 40 includes a temporary bonding section 40a and a main bonding section 40b. As shown in FIG. 4, the temporary bonding section 40a includes a temporary bonding head 41a as a first bond head, a substrate recognition camera 44a, a temporary bonding stage 46a as a first bond stage, and a plasma irradiator 90. The temporary bonding head 41a includes a collet 42a that suction-holds the die D at its tip, similar to the pickup head 21. The temporary bonding head 41a moves in the Y1-Y2 direction. The substrate recognition camera 44a captures an image of a position recognition mark (not shown) on the substrate S and recognizes the bonding position. When the die D is placed on the substrate S, the temporary bonding stage 46a rises and supports the substrate S from below. The temporary bonding stage 46a has a suction port (not shown) for vacuum-absorbing the substrate S, and can fix the substrate S. With this configuration, the temporary pressure bonding head 41a picks up the die D from the intermediate stage 31, and bonds the die D to the substrate S that is being conveyed, based on the imaging data of the substrate recognition camera 44a.

[0019] As shown in FIG. 5, the final bonding section 40b has a final bonding head 41b as a second bond head, a substrate recognition camera 44b, and a final bonding stage 46b as a second bond stage. The final bonding head 41b has a collet 42b that presses the die D against the substrate S. The final bonding head 41b moves in the Y1-Y2 direction. When the die D is placed on the substrate S, the final bonding stage 46b rises and supports the substrate S from below. The final bonding stage 46b has a suction port (not shown) for vacuum-adsorbing the substrate S, and can fix the substrate S. The final bonding stage 46b heats the substrate S by a heating device 461. With this configuration, the final bonding head 41b final-bonds the die D, which is temporarily bonded to the substrate S, to the substrate S. The load or load application time of the final bonding head 41b performing the final bonding is greater than the load or load application time of the temporary bonding head 41a performing the temporary bonding. In order to check the pressure-bonded state of the die D, the board recognition camera 44b photographs the die D and the board S.

[0020] 1, the transport section 50 has transport lanes 51 and 52 that move the substrate S in the X1-X2 direction. The transport lanes 51 and 52 are provided in parallel. With this configuration, the transport section 50 takes out the substrate S from the substrate supply section 60, moves the substrate S along the transport lanes 51 and 52 through the temporary pressure bonding stage 46a and the main pressure bonding stage 46b to the substrate unloading section 70, and delivers the substrate S to the substrate unloading section 70.

[0021] The substrate supplying section 60 removes the substrate S, which has been stored in the transport jig and carried in, from the transport jig and supplies it to the transporting section 50. The substrate unloading section 70 stores the substrate S transported by the transporting section 50 in the transport jig.

[0022] The control system of the flip chip bonder 10 will be described with reference to Fig. 6. Fig. 6 is a block diagram showing a schematic configuration of the control system of the flip chip bonder shown in Fig. 1.

[0023] The control system 8 includes a control unit (control device) 80, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 80 is broadly configured as a computer including a control and arithmetic unit 81 mainly configured with a CPU (Central Processing Unit), a storage unit 82, an input / output unit 83, a bus line 84, and a power supply unit 85. The storage unit 82 has a main storage unit 82a and an auxiliary storage unit 82b. The main storage unit 82a is configured with a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage unit 82b is configured with an HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control data and image data necessary for control. In addition, an external storage device can be connected to the control unit 80.

[0024] The input / output device 83 includes a monitor 83a for displaying the device status and information of the flip chip bonder 1, a touch panel 83b for inputting an operator's instruction, a mouse 83c for operating the monitor 83a, and an image capture device 83d for capturing image data from the optical system 88. The input / output device 83 further includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the XY table (not shown) of the wafer supply unit 10, the pickup head table, the drive unit of the bond head table, the drive unit of the peeling unit 13, and the like. The I / O signal control device 83f captures signals from the signal unit 87 and controls the signal unit 87. The signal unit 87 includes switches and volumes for controlling the brightness of various sensors and lighting devices. The optical system 88 includes a wafer recognition camera 24, a stage recognition camera 34, and substrate recognition cameras 44a and 44b. The wafer recognition camera 24, the stage recognition camera 34, and the substrate recognition cameras 44a and 44b convert light intensity and color into numerical values. The control / arithmetic unit 81 takes in necessary data via a bus line 84, performs calculations, controls the pickup head 21 and the like, and sends information to a monitor 83a and the like.

[0025] The control unit 80 stores image data captured by the wafer recognition camera 24, the stage recognition camera 34, and the substrate recognition cameras 44a, 44b in the storage device 82 via the image capture device 83d. Using software programmed based on the stored image data, the control and calculation device 81 is used to position the die D and the substrate S and to perform an appearance inspection of the die D and the substrate S. Based on the positions of the die D and the substrate S calculated by the control and calculation device 81, the software moves the drive unit 86 via the motor control device 83e. Through this process, the die on the wafer is positioned, and the pick-up head table and the bond head table are operated to bond the die D onto the substrate S.

[0026] The control unit 80 can be configured by installing the above-mentioned program stored in the external storage device to the computer. The external storage device includes, for example, a HDD, a USB memory, an SSD, etc. The auxiliary storage device 82b and the external storage device are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term recording media is used in this specification, it may include only the auxiliary storage device 82b alone, only the external storage device alone, or both. Note that the provision of programs and data to the computer and the provision of programs and data from the computer to the external device may be performed using communication means such as the Internet or a dedicated line, without using an external storage device.

[0027] A part of the manufacturing process of a semiconductor device using the flip chip bonder 1 (a manufacturing method of a semiconductor device) will be described with reference to Fig. 7. Fig. 7 is a flowchart showing a manufacturing method of a semiconductor device using the flip chip bonder shown in Fig. 1. In the following description, the operation of each part constituting the flip chip bonder 1 is controlled by a control unit 80.

[0028] (Wafer loading process: process S1) A wafer cassette (not shown) containing a wafer ring WR is loaded into a wafer cassette lifter 11. A dicing tape DT to which a die D separated from a wafer W is attached is attached to the wafer ring WR. The wafer supply unit 10 removes the wafer ring WR from the wafer cassette filled with the wafer ring WR and carries it into a wafer holder 12.

[0029] The wafer W is, for example, a semiconductor wafer, and the die D as a workpiece is a semiconductor chip. On the dicing tape DT, the surface of the die D faces upward, and on the surface of the die D, for example, an insulating film Di and a metal electrode De are provided in the opening of the insulating film Di, as shown in FIG.

[0030] (Substrate loading process: Process S2) The transport jig storing the substrate S is inserted into the substrate supply section 60. The substrate supply section 60 removes the substrate S from the transport jig. The removed substrate S is carried into the bonding section 40 via the transport section 50. An insulating film Si is provided on the surface of the substrate S, and a metal electrode Se is provided in an opening of the insulating film Si (see FIG. 9).

[0031] (Pickup process: process S3) After step S1, wafer holder 12 moves so that the desired die D can be picked up from dicing tape DT. Wafer recognition camera 24 photographs die D. Positioning and surface inspection of die D are performed based on image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of die D on wafer holder 12 from the die position reference point of the flip chip bonder, and positioning is performed. Note that the die position reference point is previously held at a predetermined position of wafer holder 12 as the initial setting of the device. The image data is processed to perform surface inspection of die D.

[0032] The peeling unit 13 moves upward so that the upper surface of the peeling unit 13 comes into contact with the back surface of the dicing tape DT. The peeling unit 13 then adsorbs the dicing tape DT. The pick-up head 21 descends while drawing a vacuum on the collet 22, lands on the die D to be peeled, and adsorbs the die D. The pick-up head 21 raises the collet 22 and peels the die D from the dicing tape DT. As a result, the die D is picked up by the pick-up head 21.

[0033] The pickup head 21 moves from the pickup position along the X1-X2 direction to above the flip stage 31a of the intermediate stage 31. The pickup head 21 descends and places the die D held by the collet 22 on the flip stage 31a. The flip stage 31a rotates 180 degrees to invert the surface (front surface) of the die D on which the metal electrode De is formed so that it faces downward, and places the die D on the pickup stage 31b.

[0034] The stage recognition camera 34 photographs the die D on the pickup stage 31b. Positioning and surface inspection of the die D are performed based on image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the die D on the pickup stage 31b from the die position reference point of the flip chip bonder, and positioning is performed. Note that the die position reference point is previously held at a predetermined position on the pickup stage 31b as the initial setting of the device. The image data is processed to perform surface inspection of the die D.

[0035] After transporting the die D to the intermediate stage 31, the pickup head 21 is returned to the wafer holder 12. The next die D is peeled off from the dicing tape DT according to the procedure described above, and thereafter, the dies D are peeled off one by one from the dicing tape DT according to the same procedure.

[0036] (Bond process: Process S4) The transport unit 50 transports the substrate S to the temporary bonding stage 46a. The substrate recognition camera 44a photographs the substrate S placed on the temporary bonding stage 46a. Positioning and surface inspection of the substrate S are performed based on image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the flip chip bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as the initial setting of the device. The image data is processed to perform surface inspection of the substrate S.

[0037] The adsorption position of the temporary compression bonding head 41a is corrected based on the amount of deviation of the die D on the intermediate stage 31 calculated in step S3. The temporary compression bonding head 41a descends and adsorbs the die D with the collet 42a. Then, the temporary compression bonding head 41a ascends and picks up the die D from the intermediate stage 31. The temporary compression bonding head 41a moves from above the intermediate stage 31 to above the substrate S while holding the die D with the collet 42a.

[0038] The plasma irradiator 90 moves below the temporary pressure bonding head 41a and above the substrate S. The plasma irradiator 90 irradiates the surface of the die D and the surface of a predetermined portion of the substrate S with plasma (plasma processing) to activate the respective surfaces. After that, the plasma irradiator 90 retreats.

[0039] The temporary pressure bonding head 41a descends to temporarily pressure bond the die D held by the collet 42a onto a predetermined location of the substrate S. As a result, the insulating film Di on the surface of the die D and the insulating film Si on the surface of the substrate S are bonded together.

[0040] The substrate recognition camera 44a photographs the die D bonded to the substrate S. Based on image data acquired by photographing, an inspection is performed to check whether the die D is bonded in a desired position (inspection of the relative position between the die D and the substrate S).

[0041] The temporary bonding head 41a that has temporarily bonded the die D to the substrate S is returned to the intermediate stage 31. According to the procedure described above, the next die D is picked up from the intermediate stage 31 and temporarily bonded to the substrate S. This is repeated until the die D is temporarily bonded to all of the substrates S.

[0042] The transport section 50 transports the substrate S to the final bonding stage 46b. The heating device 461 heats the substrate S on the final bonding stage 46b. The final bonding head 41b moves from a retracted position to above the die D that has been temporarily bonded to the substrate S. The final bonding head 41b descends and final bonds the die D to the substrate S with the collet 42b. This heating and pressurization bonds the metal electrode De on the surface of the die D and the metal electrode Se on the surface of the substrate S. The substrate recognition camera 44b photographs the die D and the substrate S. A surface inspection (confirmation of the bonding state) is performed based on image data acquired by photographing.

[0043] (Substrate unloading process: Process S5) The substrate S with the die D bonded thereto is transported to the substrate unloading section 70. The substrate unloading section 70 stores the substrate S in a transport jig. The transport jig storing the substrate S is unloaded from the flip chip bonder 1.

[0044] Next, the plasma irradiator 90 will be described with reference to Fig. 8. Fig. 8 is a diagram showing the configuration of the plasma irradiator shown in Fig. 1.

[0045] The plasma irradiator 90 performs a remote atmospheric pressure plasma treatment (surface activation treatment) at room temperature. The plasma irradiator 90 is composed of a gas inlet 91, a gas inlet nozzle 92, a plasma generating unit 93, and a nozzle 94, and the plasma generating unit 93 is connected to a high frequency power source 95. In this configuration, a processing gas is introduced from the gas inlet 91, passes through the inside of the gas inlet nozzle 92, and flows in the direction of the nozzle 94. In the middle of this flow, high frequency power is applied by the high frequency power source 95 in the plasma generating unit 93, the passing processing gas is activated, and active species AS of the processing gas are generated. The active species AS generated in the plasma generating unit 93 is carried by the gas flow to the inside of the nozzle 94, and is ejected from a gas supply hole 96 provided in the nozzle 94. A plurality of gas supply holes 96 are provided on each of the side facing the die D (upper side) and the side facing the substrate S (lower side). The gas inlet 91 is connected to a processing gas supply source via a pipe 101, a valve 102, and a flow rate controller 103. The piping 101 , the valve 102 and the flow rate controller 103 may be included in the plasma irradiation device 90 .

[0046] The material of the gas introduction nozzle 92 is low conductivity material generally called an insulator, such as glass, quartz glass, alumina, etc. However, a part of the gas introduction nozzle 92 that is not in contact with the electrode in the plasma generation unit 93 may be made of metal generally called a conductor, such as stainless steel or aluminum (Al). The shape of the gas introduction nozzle 92 is tubular in the center for introducing gas, and the cross section may be circular or rectangular.

[0047] As the processing gas, for example, nitrogen (N) gas can be used. Thus, in the plasma generating unit 93, nitrogen plasma is generated by applying high-frequency power. The activated species AS emitted by the plasma are irradiated onto the surfaces of the die D and the substrate S, thereby performing a surface activation process. The surface activation process applies energy to the atomic bonds of the material, breaking the atomic bonds and making them unstable, thereby increasing chemical reactivity. The processing gas is not limited to nitrogen, and rare gases such as argon (Ar) and helium (He) may also be used.

[0048] A surface activation processing method for the die D and the substrate S by the plasma irradiator 90 will be described with reference to Figures 9 and 10. Figures 9 and 10 are diagrams for explaining the plasma irradiation method in the first bonding portion.

[0049] 9, the temporary bonding head 41a picks up the die D from the intermediate stage 31 and transports it above the placement position of the substrate S. Here, the die D has, for example, a metal electrode De of copper (Cu) or gold (Au) and an insulating film Di of polyimide or the like formed on its surface. The substrate S has, for example, a metal electrode of Cu or Au and an insulating film of polyimide or the like formed on its surface.

[0050] As shown in FIG. 10, the plasma irradiator 90 moves between the die D and the substrate S. The plasma irradiator 90 irradiates the surface of the substrate S with plasma in parallel with the plasma irradiation on the surface of the die D. More specifically, the plasma irradiator 90 irradiates plasma from a plurality of gas supply holes 96 provided on the upper and lower parts of the nozzle 94. The plasma irradiation time is preferably, for example, 5 seconds or less, and more preferably about 1 second. This activates the insulating film Di of the die D and the insulating film Si of the substrate S. Thereafter, the temporary pressure bonding head 41a descends to place the die D on the substrate S and press it. This bonds the insulating film Di of the die D and the insulating film Si of the substrate S.

[0051] According to this embodiment, since the die D and the substrate S are irradiated with plasma immediately before bonding, it is possible to bond (bond) them without touching the activated bonding surface. In addition, the bonding surface is unlikely to become inactive before bonding. This increases the bonding strength between the die D and the substrate S. In addition, since the bonding is performed in an activated state, bonding defects can be reduced.

[0052] According to this embodiment, surface activated bonding is possible, so hybrid bonding (bonding) is possible. As a result, hybrid bonding allows for a narrower pitch of mounting positions, so the degree of integration can be increased. Furthermore, hybrid bonding also enables mounting in chiplet technology. Chiplet technology is a technology in which a CPU, GPU, accelerator, etc. that constitute an integrated circuit are divided into multiple chips for each function, each chip is manufactured using an optimal process, and the chips are combined and packaged as a single chip. In the chiplet technology, for example, a silicon interposer is used, on whose surface a redistribution layer (RDL) is provided, on which Cu or Au electrodes and an insulating film such as polyimide are formed.

[0053] According to this embodiment, since the plasma processing is performed in the atmosphere, a vacuum chamber or the like is not required. This makes it possible to prevent the flip chip bonder from becoming large. Since this can be achieved by adding only a plasma irradiator, it is possible to achieve this by modifying a conventional device.

[0054] <Modification> Below, some representative modified examples of the embodiment are exemplified. In the following description of the modified examples, the same reference numerals as those in the above-mentioned embodiment may be used for parts having the same configuration and function as those described in the above-mentioned embodiment. The description of such parts may be appropriately cited within the scope of technical inconsistency. Furthermore, a part of the above-mentioned example and all or a part of the multiple modified examples may be appropriately applied in a composite manner within the scope of technical inconsistency.

[0055] (First Modification) The plasma irradiation method in the first modified example will be described with reference to Figures 11 and 12. Figures 11 and 12 are diagrams for explaining the plasma irradiation method in the first modified example.

[0056] In the embodiment, an example has been described in which one plasma irradiator 90 irradiates plasma to the die D and the substrate S at the same timing, but two plasma irradiators may be used to irradiate plasma to the die D and the substrate S at different timings.

[0057] For example, the temporary pressure bonding unit 40a includes a first plasma irradiator 90a and a second plasma irradiator 90b. The first plasma irradiator 90a has a gas supply hole 96 only on the side (upper side) facing the die D. The second plasma irradiator 90b has a gas supply hole 96 only on the side (lower side) facing the substrate S.

[0058] 11, the first plasma irradiator 90a moves from the retreated position to below the die D. Then, the first plasma irradiator 90a irradiates the surface of the die D with plasma.

[0059] 12, the first plasma irradiator 90a moves to the retreat position, and the second plasma irradiator 90b moves between the die D and the substrate S. Then, the second plasma irradiator 90b irradiates plasma onto the surface of the substrate S. After that, the second plasma irradiator 90b moves to the retreat position.

[0060] (Second Modification) The plasma irradiation method in the second modified example will be described with reference to Figures 13 and 14. Figures 13 and 14 are diagrams for explaining the plasma irradiation method in the second modified example.

[0061] In the embodiment, an example has been described in which one plasma irradiator 90 irradiates plasma to the die D and the substrate S at the same timing, but it is also possible to irradiate plasma to the die D and the substrate S at different timings using one plasma irradiator.

[0062] The plasma irradiator 90 has gas supply holes 96 on the side facing the die D (upper side) and the side facing the substrate S (lower side) as in the embodiment. The upper gas supply holes 96 and the lower gas supply holes 96 are configured to be capable of plasma irradiation separately. The surface of the die D may be irradiated with plasma first, or the surface of the substrate S may be irradiated with plasma first.

[0063] 13, the plasma irradiator 90 moves from the retreated position to between the die D and the substrate S. Then, the plasma irradiator 90 irradiates the surface of the die D with plasma.

[0064] 14, the plasma irradiator 90 irradiates plasma onto the surface of the substrate S. Thereafter, the plasma irradiator 90 moves to the retreat position.

[0065] The plasma irradiator 90 may have the gas supply hole 96 on the side facing the die D (upper side) or the side facing the substrate S (lower side), that is, only on one side. The plasma irradiator 90 can be inverted or rotated to change the direction (irradiation direction) of the gas supply hole 96. This makes it possible to irradiate plasma to the die D and the substrate S at different timings by using one plasma irradiator, as shown in Figs. 13 and 14.

[0066] (Third Modification) The bonding process in the third modified example will be described with reference to Figures 15(a), 15(b), 16(a) and 16(b). Figure 15(a) is a diagram showing the position (initial position, pick-up position) of each element when the first bond head picks up the die from the intermediate stage. Figure 15(b) is a diagram showing the position (plasma irradiation position) of each element when the plasma irradiator irradiates plasma to the die and the substrate. Figure 16(a) is a diagram showing the position (bond position) of each element when the first bond head bonds the die to the substrate. Figure 16(b) is a diagram showing the state in which each element has returned to its initial position.

[0067] In the embodiment, an example has been described in which the pre-bonding head 41a is moved horizontally and raised and lowered to pick up the die D or place the die D on the substrate S. However, the present invention is not limited to this. For example, after the pre-bonding head 41a moves onto the intermediate stage 31, it may only perform a raising and lowering operation to move the wafer holder 12, the intermediate stage 31, the pre-bonding stage 46a, and the plasma irradiator 90.

[0068] As shown in FIG. 15(a), wafer holder 12, intermediate stage 31, temporary pressure bonding stage 46a, first plasma irradiator 90a and second plasma irradiator 90b are arranged along the Y1-Y2 direction and are movable along the Y1-Y2 direction.

[0069] After the temporary bonding head 41a picks up the die D, the wafer holder 12, the intermediate stage 31, the temporary bonding stage 46a, the first plasma irradiator 90a, and the second plasma irradiator 90b move in the Y2 direction as shown by the arrows in Fig. 15(a). Then, the wafer holder 12, the intermediate stage 31, the temporary bonding stage 46a, the first plasma irradiator 90a, and the second plasma irradiator 90b are disposed at the positions shown in Fig. 15(b). In this state, the first plasma irradiator 90a and the second plasma irradiator 90b irradiate the die D and the substrate S with plasma.

[0070] After the plasma irradiation, the wafer holder 12, the intermediate stage 31, the temporary bonding stage 46a, and the first plasma irradiator 90a move in the Y2 direction. The second plasma irradiator 90b moves in the Y1 direction. Then, the temporary bonding stage 46a, the first plasma irradiator 90a, and the second plasma irradiator 90b are disposed at the position shown in FIG. 16(a). In this state, the temporary bonding head 41a bonds the die D to the substrate S.

[0071] After bonding, wafer holder 12, intermediate stage 31, temporary pressure bonding stage 46a, and first plasma irradiator 90a move in the Y1 direction. Then, wafer holder 12, intermediate stage 31, temporary pressure bonding stage 46a, first plasma irradiator 90a, and second plasma irradiator 90b are disposed at the positions shown in FIG. 16(b).

[0072] The disclosure made by the present inventor has been specifically described above based on embodiments and modified examples. However, it goes without saying that the present disclosure is not limited to the above-described embodiments and modified examples, and various modifications are possible.

[0073] In the embodiment, an example in which the main compression bonding portion 40b is provided in the bonding portion 40 has been described, but the main compression bonding portion 40b may be provided outside the flip chip bonder 1.

[0074] In the embodiment, an example in which the reversing mechanism is provided on the intermediate stage has been described, but the reversing mechanism may be provided on the pickup flip head, and the transfer head may receive the die from the pickup flip head and place it on the intermediate stage.

[0075] In addition, in the embodiment, an example in which there is one intermediate stage portion and one bonding portion has been described, but there may be a plurality of each.

[0076] Also, in the embodiment, an example in which there is one bond head has been described, but there may be multiple bond heads. [Explanation of symbols]

[0077] 1. Flip chip bonder (die bonding device) 41a ···Temporary bonding head (first bond head) 46a ···Temporary bonding stage (first bond stage) 90 Plasma irradiator

Claims

1. a first bond head for picking up the die; a first bond stage for holding a substrate; a plasma irradiator that irradiates a surface of the die picked up by the first bond head and a surface of the substrate held by the first bond stage with plasma; A die bonding apparatus comprising:

2. 2. The die bonding apparatus according to claim 1, The plasma irradiator is a die bonding apparatus having a gas supply hole for spraying plasma upward and a gas supply hole for spraying plasma downward.

3. The die bonding apparatus of claim 2, further comprising: A die bonding apparatus including a control device configured to perform upward plasma irradiation and downward plasma irradiation in parallel by the plasma irradiator.

4. The die bonding apparatus of claim 2, further comprising: A die bonding apparatus including a control device configured to cause the plasma irradiator to irradiate plasma upward and downward at different times.

5. 2. The die bonding apparatus according to claim 1, The plasma irradiator has a gas supply hole for ejecting plasma in one direction, The die bonding apparatus further includes a control device configured to direct the gas supply hole upward to irradiate plasma, and then direct the gas supply hole downward to irradiate plasma.

6. 2. The die bonding apparatus according to claim 1, The plasma irradiator is a die bonding apparatus having a first plasma irradiator having a gas supply hole for spraying plasma upward, and a second plasma irradiator having a gas supply hole for spraying plasma downward.

7. 7. The die bonding apparatus of claim 6, further comprising: A die bonding apparatus comprising a control device configured to perform upward plasma irradiation by the first plasma irradiator and downward plasma irradiation by the second plasma irradiator in parallel.

8. 7. The die bonding apparatus of claim 6, further comprising: A die bonding apparatus comprising a control device configured to perform upward plasma irradiation by the first plasma irradiator and downward plasma irradiation by the second plasma irradiator at different times.

9. 2. The die bonding apparatus of claim 1, further comprising: a second bond head for applying pressure to the die mounted on the substrate; a second bond stage having a heating device for heating the substrate on which the die is placed; A die bonding apparatus comprising:

10. A step of picking up a workpiece; holding a substrate; irradiating a surface of the picked-up workpiece and a surface of the held substrate with plasma; bonding the plasma irradiated workpiece to the plasma irradiated substrate; Implementation methods including:

11. A method for manufacturing a semiconductor device, comprising the mounting method according to claim 10.

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