Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

To provide a technology that can suppress the deterioration of sealing members.SOLUTION: A substrate processing apparatus comprises a mounting table which can mount substrates on the mounting table, a heater located above the mounting table and radiating heat rays toward the substrate mounted on the mounting table to heat the substrate, a process container arranged below the heater, housing the mounting table, and in which at least the portion adjacent to the heater is composed of opaque quartz, and a sealer composed of opaque quartz to suppress the transmission of heat rays reflected from the substrate and to maintain an airtight seal between the process container and the heater by means of a sealing member.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. [Background technology]

[0002] A lamp heater is sometimes provided on the upper part of a processing chamber to heat a substrate in the processing chamber (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2020 / 188816 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when the substrate is heated, heat rays from the lamp heater are reflected by the substrate, and the seal member provided at the upper part of the processing chamber may be heated and deteriorated.

[0005] The present disclosure provides a technique capable of suppressing deterioration of a sealing member. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, a mounting table on which a substrate can be placed; a heating unit located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a processing vessel disposed below the heating unit, housing the mounting table, and having at least a portion adjacent to the heating unit made of opaque quartz; a seal unit configured to suppress transmission of heat rays reflected from the substrate by the opaque quartz and to maintain airtightness between the processing vessel and the heating unit by a seal member; The present invention provides a technique that includes the above. Effect of the Invention

[0007] According to the present disclosure, it is possible to suppress deterioration of the sealing member. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 2] 1 is a cross-sectional view showing the periphery of a ceiling portion of a processing container of a substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 3] 2 is a diagram showing a configuration of a control unit (control means) of the substrate processing apparatus according to an embodiment of the present disclosure. FIG. [Figure 4] FIG. 1 is a flow diagram illustrating a substrate processing process according to an embodiment of the present disclosure. [Diagram 5] 1A and 1B are diagrams for explaining a state inside a processing container in a substrate processing step according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, one embodiment of the present disclosure will be described mainly with reference to Figures 1 to 5. Note that all of the drawings used in the following description are schematic, and the dimensional relationships of the elements, the ratios of the elements, etc. shown in the drawings do not necessarily match the actual ones. Furthermore, the dimensional relationships of the elements, the ratios of the elements, etc. between multiple drawings do not necessarily match.

[0010] (1) Configuration of the substrate processing device A substrate processing apparatus 100 according to an embodiment of the present disclosure will be described below. The substrate processing apparatus according to this embodiment is configured to mainly perform substrate processing on a film or base formed on a substrate surface.

[0011] <Processing room> 1, the substrate processing apparatus 100 includes a processing furnace 202 for performing plasma processing on a substrate 200. The processing furnace 202 includes a processing vessel 203 that constitutes a processing chamber 201 and houses a susceptor 217 (described later). The processing vessel 203 includes a dome-shaped upper vessel 210 that is a first vessel, and a bowl-shaped lower vessel 211 that is a second vessel. The processing chamber 201 is formed by placing the upper vessel 210 over the lower vessel 211.

[0012] The processing chamber 201 has a plasma generation space 201a where the processing gas is excited into plasma, and a substrate processing space 201b that communicates with the plasma generation space 201a. The plasma generation space 201a is a space in a range where a resonant coil 212, which is an electrode and a coil, is provided around the plasma generation space 201a, and is a space where plasma is generated. The plasma generation space 201a refers to a space in the processing chamber 201 that is above the lower end of the resonant coil 212 and below the upper end of the resonant coil 212. The substrate processing space 201b communicates with the plasma generation space 201a and is a space where the substrate 200 is processed. The substrate processing space 201b is a space where the substrate is processed using plasma, and is a space below the lower end of the resonant coil 212. In this embodiment, the horizontal diameter of the plasma generation space 201a and the horizontal diameter of the substrate processing space 201b are configured to be approximately the same. The structure forming the plasma generation space 201a is also called a plasma generation chamber, and the structure forming the substrate processing space 201b is also called a substrate processing chamber. The plasma generation space 201a may be rephrased as a plasma generation region in the processing chamber 201. The substrate processing space 201b may be rephrased as a substrate processing region in the processing chamber 201.

[0013] <Susceptor> 1, a susceptor 217 serving as a mounting stage on which a substrate 200 can be placed is accommodated in a substrate processing space 201b in the processing vessel 203. The susceptor 217 is disposed below the lower end of the resonance coil 212 in the processing chamber 201.

[0014] A susceptor heater 217b is integrally embedded inside the susceptor 217. The susceptor heater 217b is configured to be able to heat the substrate 200 when power is supplied thereto.

[0015] The susceptor 217 is electrically insulated from the lower container 211. The impedance adjustment electrode 217c is provided inside the susceptor 217 in order to further improve the uniformity of the density of the plasma generated on the substrate 200 placed on the susceptor 217. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275 serving as an impedance adjustment unit.

[0016] The susceptor 217 is provided with a susceptor lifting mechanism 268 as a drive mechanism for lifting and lowering the susceptor 217. The susceptor 217 is provided with a through hole 217a, and the bottom surface of the lower vessel 211 is provided with a substrate lifting pin 266. When the susceptor 217 is lowered by the susceptor lifting mechanism 268, the substrate lifting pin 266 is configured to penetrate through the through hole 217a. The susceptor lifting mechanism 268 controls the lifting operation of the susceptor 217 by a controller 291, which will be described later. The controller 291 is configured to be able to control the susceptor lifting mechanism 268 so that the substrate 200 is positioned below the plasma generation space 201a when processing the substrate 200 placed on the upper surface (an example of a substrate placement surface) of the susceptor 217. In this manner, by controlling the substrate processing position, the substrate 200 can be raised or lowered to the most efficient position for substrate processing.

[0017] The susceptor 217, the susceptor heater 217b, and the impedance adjusting electrode 217c mainly constitute a substrate placement portion according to this embodiment.

[0018] <Processing vessel> 1, the processing vessel 203 is disposed below a lamp heater 280 described below, and is configured to accommodate a susceptor 217. The upper vessel 210 has a side wall portion 210a and a ceiling portion 210b. The side wall portion 210a is cylindrical. The ceiling portion 210b extends along the circumferential direction of the side wall portion 210a and protrudes radially inward from the upper end portion of the side wall portion 210a. An opening 210c is formed in the center of the ceiling portion 210b.

[0019] The lower end of the ceiling portion 210b is disposed above the upper end of the resonance coil 212. That is, the ceiling portion 210b is disposed above the upper end of the resonance coil 212. Also, the ceiling portion 210b is disposed above the plasma generation space 201a.

[0020] The ceiling portion 210b is made of opaque quartz. Opaque quartz is a material in which air bubbles are dispersed, and has a lower transmittance than transparent quartz, and a higher reflectance than transparent quartz. In other words, opaque quartz is a material that has a lower thermal transmittance than transparent quartz, and has a higher thermal insulation and heat blocking property. That is, the ceiling portion 210b has a function of reflecting a part of heat rays (also called electromagnetic waves or light) and blocking heat (suppressing the transmission of heat rays), more specifically, a function of reflecting a part of the heat rays radiated from the lamp heater 280 and reflected by the substrate 200 and blocking heat (suppressing the transmission of heat rays).

[0021] The ceiling portion 210b may be made of opaque quartz made of natural material or synthetic opaque quartz. The cost of the opaque quartz made of natural material is lower than that of the opaque quartz made of synthetic material. The opaque quartz made of synthetic material contains less impurities than the opaque quartz made of natural material.

[0022] By disposing the ceiling 210b above the plasma generation space 201a, etching of the ceiling 210b due to the influence of an electromagnetic field, etc. can be prevented. Therefore, even if the ceiling 210b is made of opaque quartz, which is a natural material, the generation of particles such as impurities can be prevented or reduced.

[0023] The sidewall 210a is disposed below the upper end of the resonant coil 212. The sidewall 210a is made of transparent quartz. Transparent quartz is a material with few bubbles and impurities, and has a higher transmittance than opaque quartz and a lower reflectance than opaque quartz. That is, the sidewall 210a has a function of transmitting heat rays, more specifically, a function of transmitting an electromagnetic field generated by supplying high-frequency power to the resonant coil 212, to facilitate the generation of plasma in the plasma generation space 201a.

[0024] That is, the upper container 210 is made of two types of materials with different transmittances (also called heat insulating properties or thermal insulation properties).

[0025] The lower container 211 is made of, for example, aluminum (Al). A loading / unloading port 245 for loading and unloading the substrate 200 is formed in the lower part of the lower container 211, below the sidewall of the lower container 211. A gate valve 244 capable of opening and closing the loading / unloading port 245 is provided in the loading / unloading port 245. By loading and unloading the substrate 200 through the gate valve 244, the airtightness inside the processing container 203 can be maintained.

[0026] <Heating part> A lamp heater 280 is provided above the ceiling portion 210b as a heater. The lamp heater 280 is attached to the center of the lid body 233. The periphery of the lid body 233 is joined to the manifold 300. The lid body 233 to which the lamp heater 280 is attached is joined to the ceiling portion 210b via the manifold 300.

[0027] 1 and 2, an annular manifold 300 is joined to the upper part of the ceiling portion 210b. More specifically, the ceiling portion 210b and the manifold 300 are fastened and fixed by, for example, a screw member (not shown) so that the lower surface of the annular manifold 300 contacts the upper surface of the ceiling portion 210b.

[0028] An annular groove 300a is formed on the lower surface of the manifold 300. An O-ring 301, which is a seal member and serves as a sealing portion, is fitted into this annular groove 300a. This O-ring 301 is in close contact with the upper surface of the ceiling portion 210b and the lower surface of the manifold 300 when the ceiling portion 210b and the manifold 300 are joined (fastened and fixed) to each other. Note that there is no particular limitation on the O-ring 301 as long as it is an elastic body having heat resistance. For example, an O-ring made of a fluorine-based resin may be used as the O-ring 301.

[0029] 2, a transparent quartz sheet 304 is provided on the upper surface of the ceiling portion 210b between the ceiling portion 210b and the lower end of the manifold 300. The transparent quartz sheet 304 is used as a sealing surface that brings the manifold 300 into contact with the ceiling portion 210b to seal it. Note that, while FIG. 2 shows a case in which the transparent quartz sheet 304 is provided on a portion of the upper surface of the ceiling portion 210b that comes into contact with the manifold 300, the present invention is not limited to this and the transparent quartz sheet 304 may be provided on the entire upper surface of the ceiling portion 210b.

[0030] As described above, the ceiling 210b is made of opaque quartz and contains air bubbles, which makes it less airtight than transparent quartz. In this embodiment, a transparent quartz sheet made of transparent quartz, which has higher airtightness than opaque quartz, is provided between the ceiling 210b and the lower end of the manifold 300, thereby maintaining airtightness between the upper end of the ceiling 210b and the lower end of the manifold 300. Therefore, the airtightness inside the processing vessel 203 can be maintained.

[0031] The sealing part according to this embodiment is mainly constituted by the O-ring 301 and the transparent quartz sheet 304. The heating part according to this embodiment is mainly constituted by the lamp heater 280 and the manifold 300. That is, the airtightness between the processing vessel 203 and the heating part, that is, the airtightness of the ceiling part 210b in contact with the heating part, is maintained by the O-ring 301 and / or the transparent quartz sheet 304.

[0032] The lamp heater 280 is provided at a position above the susceptor 217 and facing the upper surface of the susceptor 217. The lamp heater 280 is disposed above the processing chamber 201, that is, outside the opening 210c of the upper vessel 210. The lamp heater 280 is configured to radiate heat rays (also called electromagnetic waves or light) from above the ceiling portion 210b toward the substrate 200 placed on the susceptor 217 to heat the substrate 200. The lamp heater 280 is configured to efficiently heat the substrate 200 placed on the susceptor 217.

[0033] Also, the thickness T2 of the ceiling portion 210b is configured to be thicker than the thickness T1 of the sidewall portion 210a. In other words, the difference between the inner periphery and the outer periphery of the upper container 210 is configured to be larger in the ceiling portion 210b than in the sidewall portion 210a. By configuring the thickness T2 of the ceiling portion 210b to be thicker than the thickness T1 of the sidewall portion 210a, it is possible to further suppress the transmission of the reflected heat by the substrate 200 in the ceiling portion 210b where the O-ring 301 is disposed, and it is possible to protect the O-ring 301.

[0034] The thickness T1 of the sidewall 210a is, for example, 5 to 10 mm, preferably 7 to 8 mm. If the thickness T1 of the sidewall 210a is less than 5 mm, the strength of the upper container 210 may be insufficient. If the thickness T1 of the sidewall 210a is 5 mm or more, the strength of the upper container 210 can be ensured. If the thickness T1 of the sidewall 210a is 7 mm or more, the strength of the upper container 210 can be made more sufficient. If the thickness T1 of the sidewall 210a exceeds 10 mm, most of the energy of the electromagnetic field generated by the resonant coil 212 may be converted into heat in the sidewall 210a and lost. If the thickness T1 of the sidewall 210a is 10 mm or less, the energy of the electromagnetic field generated by the resonant coil 212 may be prevented from being converted into heat in the sidewall 210a and lost. By setting the thickness T1 of the sidewall 210a to 8 mm or less, it is possible to further suppress the energy of the electromagnetic field generated by the resonance coil 212 from being converted into heat in the sidewall 210a and becoming a loss. Therefore, by setting the thickness T1 of the sidewall 210a to 5 to 10 mm, preferably 7 to 8 mm, it is possible to efficiently transmit the electromagnetic field and generate plasma in the plasma generation space 201a. Furthermore, if the thickness T1 of the sidewall 210a exceeds 10 mm, the weight of the upper container 210 itself increases, and the load on the surface of the lower end of the sidewall 210a that is in contact with the upper end of the lower container 211 increases. By setting the thickness T1 of the sidewall 210a to 10 mm or less, it is possible to reduce the load on the surface of the upper end of the lower container 211. By setting the thickness T1 of the sidewall 210a to 8 mm or less, it is possible to further reduce the load on the surface of the upper end of the lower container 211. In this specification, the expression of a numerical range such as "5 to 10 mm" means that the lower limit and the upper limit are included in the range. Therefore, for example, "5 to 10 mm" means "5 mm or more and 10 mm or less." The same applies to other numerical ranges.

[0035] The thickness T2 of the ceiling portion 210b is, for example, 12 to 20 mm, preferably 15 to 16 mm. If the thickness T2 of the ceiling portion 210b is less than 12 mm, the reflected heat from the substrate 200 may be substantially transmitted to the outside of the processing vessel 203. If the thickness T2 of the ceiling portion 210b is 12 mm or more, the transmission of the reflected heat from the substrate 200 to the outside of the processing vessel 203 can be suppressed. If the thickness T2 of the ceiling portion 210b is 15 mm or more, the transmission of the reflected heat from the substrate 200 to the outside of the processing vessel 203 can be further suppressed. If the thickness T2 of the ceiling portion 210b exceeds 20 mm, the weight of the upper vessel 210 increases, and the load on the surface of the lower end of the side wall portion 210a that is in contact with the upper end of the lower vessel 211 increases. If the thickness T2 of the ceiling portion 210b is 20 mm or less, the load on the surface of the upper end of the lower vessel 211 that is in contact with the upper end of the lower vessel 211 can be reduced. Setting the thickness T2 of the ceiling portion 210b to 16 mm or less can further reduce the load on the surface with the upper end portion of the lower vessel 211. Therefore, by setting the thickness T2 of the ceiling portion 210b to 12 to 20 mm, preferably 15 to 16 mm, it is possible to suppress the heating of the O-ring 301 without substantially transmitting the reflected heat by the substrate 200 to the outside of the processing vessel 203, and thus suppress the deterioration of the O-ring 301.

[0036] <Gas supply section> The gas supply unit 120 that supplies a processing gas to the plasma generating space 201a in the processing vessel 203 is configured as follows.

[0037] A gas supply head 236 is provided above the processing chamber 201, that is, on the top of the upper vessel 210. The gas supply head 236 includes a cap-shaped lid 233, a gas inlet 234, a buffer chamber 237, and a shower plate 240, and is configured to supply a processing gas into the processing chamber 201.

[0038] The downstream end of a raw material gas supply pipe 232a that supplies a raw material gas as a processing gas, the downstream end of a reactive gas supply pipe 232b that supplies a reactive gas as a processing gas, and the downstream end of an inert gas supply pipe 232c that supplies an inert gas are connected to the gas inlet 234 so as to join at the junction pipe 232. The raw material gas supply pipe 232a, the reactive gas supply pipe 232b, and the inert gas supply pipe 232c are also simply referred to as the gas supply pipe 232a, the gas supply pipe 232b, and the gas supply pipe 232c, respectively.

[0039] The raw material gas supply pipe 232a is provided with, in this order from the upstream side, a raw material gas supply source 250a, a mass flow controller (MFC) 252a as a flow rate control device, and a valve 253a as an opening / closing valve.

[0040] The reactive gas supply pipe 232b is provided with a reactive gas supply source 250b, an MFC 252b, and a valve 253b in this order from the upstream side.

[0041] The inert gas supply pipe 232c is provided with an inert gas supply source 250c, an MFC 252c, and a valve 253c in this order from the upstream side.

[0042] A valve 243a is provided downstream of the junction pipe 232 where the raw material gas supply pipe 232a, the reactive gas supply pipe 232b, and the inert gas supply pipe 232c join together, and is connected to a gas inlet 234. By opening and closing the valves 253a, 253b, 253c, and 243a, the raw material gas, reactive gas, and inert gas can be supplied into the processing chamber 201 via the gas supply pipes 232a, 232b, and 232c, respectively, while the flow rates of the respective gases are adjusted by the MFCs 252a, 252b, and 252c.

[0043] The gas supply unit 120 (gas supply system) according to this embodiment is mainly composed of the raw material gas supply pipe 232a, the reactive gas supply pipe 232b, the inert gas supply pipe 232c, the MFCs 252a, 252b, and 252c, and the valves 253a, 253b, 253c, and 243a. The raw material gas supply source 250a, the reactive gas supply source 250b, and the inert gas supply source 250c may also be included in the gas supply unit.

[0044] <Exhaust section> A gas exhaust port 235 for exhausting the atmosphere inside the processing chamber 201 is provided on a side wall of the lower container 211. An upstream end of a gas exhaust pipe 231 is connected to the gas exhaust port 235. The gas exhaust pipe 231 is provided with, in this order from the upstream side, an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure adjustment unit), a valve 243b as an opening / closing valve, and a vacuum pump 246 as a vacuum exhaust device.

[0045] An exhaust unit according to this embodiment is mainly constituted by the gas exhaust port 235, the gas exhaust pipe 231, the APC valve 242, and the valve 243b. The exhaust unit may also include a vacuum pump 246.

[0046] <Plasma generation section> A spiral resonant coil 212 is disposed on the outer periphery of the processing chamber 201, i.e., on the outside of the sidewall 210a of the upper vessel 210, so as to surround the processing chamber 201. In other words, the resonant coil 212 is disposed so as to be wound around the outer periphery of the upper vessel 210 so as to surround the outer periphery (outer periphery of the plasma generation chamber) of the portion (area) corresponding to the plasma generation space 201a in the processing vessel 203 (upper vessel 210). In other words, the resonant coil 212 is disposed below the lower end of the ceiling portion 210b. In this way, by disposing the ceiling portion 210b made of opaque quartz above the resonant coil 212, it is possible to suppress the generation of particles by making it less susceptible to the influence of plasma.

[0047] An RF sensor 272, a high frequency power supply 273 that supplies high frequency power to the resonant coil 212, and a matching box 274 that matches the impedance and output frequency of the high frequency power supply 273 are connected to the resonant coil 212. The resonant coil 212 is disposed along the outer circumferential surface of the processing vessel 203 at a distance from the outer circumferential surface, and is configured to generate an electromagnetic field in the processing vessel 203 by supplying high frequency power (RF power). That is, the resonant coil 212 in this embodiment is an electrode of an inductively coupled plasma (ICP) type.

[0048] High frequency power supply 273 supplies high frequency power (RF power) to resonance coil 212. RF sensor 272 is provided on the output side of high frequency power supply 273, and monitors information on the supplied high frequency traveling wave and reflected wave. The reflected wave power monitored by RF sensor 272 is input to matching device 274. Based on the information on the reflected wave input from RF sensor 272, matching device 274 controls the impedance of high frequency power supply 273 and the frequency of the output RF power so as to minimize the reflected wave.

[0049] In order to form a standing wave of a predetermined wavelength, the winding diameter, winding pitch, and number of turns of resonance coil 212 are set so as to resonate at a certain wavelength. That is, the electrical length of resonance coil 212 is set to a length equivalent to an integer multiple (1x, 2x, ...) of one wavelength at a predetermined frequency of high frequency power supplied from high frequency power supply 273.

[0050] Both ends of resonance coil 212 are electrically grounded, and at least one of the ends is grounded via movable tap 213 in order to finely adjust the electrical length of resonance coil 212. The other end of resonance coil 212 is grounded via fixed ground 214. The position of movable tap 213 is adjusted so that the resonance characteristics of resonance coil 212 are approximately equal to those of high-frequency power supply 273. Furthermore, in order to finely adjust the impedance of resonance coil 212, a power supply unit is formed between the grounded ends of resonance coil 212 by movable tap 215.

[0051] Shielding plate 223 is provided to shield the electric field outside resonance coil 212. Shielding plate 223 is configured in a cylindrical shape, and is configured using a conductive material such as an aluminum alloy.

[0052] The plasma generating unit according to this embodiment is mainly constituted by the resonant coil 212, the RF sensor 272, and the matching box 274. Note that a high frequency power supply 273 may be included as the plasma generating unit.

[0053] Here, the principle of plasma generation in the device according to this embodiment and the properties of the plasma generated will be described.

[0054] The plasma generating circuit formed by the resonant coil 212 is formed of an RLC parallel resonant circuit. In the above-mentioned plasma generating circuit, when plasma is generated, the actual resonant frequency fluctuates slightly due to fluctuations in capacitive coupling between the voltage section of the resonant coil 212 and the plasma, fluctuations in inductive coupling between the plasma generating space 201a and the plasma, the excited state of the plasma, and the like.

[0055] Therefore, in this embodiment, in order to compensate for the resonance shift in the resonant coil 212 when plasma is generated on the power supply side, the reflected wave power from the resonant coil 212 when plasma is generated is detected by the RF sensor 272, and the matching device 274 has the function of correcting the output of the high-frequency power supply 273 based on the detected reflected wave power.

[0056] Specifically, the matching device 274 increases or decreases the impedance or output frequency of the high frequency power supply 273 so as to minimize the reflected wave power based on the reflected wave power from the resonant coil 212 when plasma is generated and detected by the RF sensor 272.

[0057] With this configuration, in the resonant coil 212 in this embodiment, high frequency power is supplied according to the actual resonant frequency of the resonant coil including the plasma (or high frequency power is supplied so as to match the actual impedance of the resonant coil including the plasma), so a standing wave is formed in which the phase voltage and the anti-phase voltage are always offset. When the electrical length of the resonant coil 212 is the same as the wavelength of the high frequency power, the highest phase current is generated at the electrical midpoint of the coil (node ​​where the voltage is zero). Therefore, in the vicinity of the electrical midpoint, there is almost no capacitive coupling with the process chamber wall or the susceptor 217, and a doughnut-shaped induction plasma with an extremely low electrical potential is generated.

[0058] In this embodiment, the resonance coil 212, which is an ICP type electrode, is used as an electrode for generating an electromagnetic field in the processing chamber 201 (plasma generating space 201a), but the present disclosure is not limited to this configuration. For example, a modified magnetron type (MMT) type cylindrical electrode may be used for this purpose.

[0059] <Control unit> 3, a controller 291, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 291a, a RAM (Random Access Memory) 291b, a storage device 291c, and an I / O port 291d. The RAM 291b, the storage device 291c, and the I / O port 291d are configured to be able to exchange data with the CPU 291a via an internal bus 291e. An input / output device 292 configured as, for example, a touch panel or a display is connected to the controller 291.

[0060] The storage device 291c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing apparatus, a program recipe in which the procedures and conditions of the substrate processing described later are described, etc. are readably stored in the storage device 291c. The process recipe is a combination of procedures in the substrate processing process described later, which are executed by the controller 291, so that a predetermined result can be obtained, and functions as a program. Hereinafter, the program recipe, the control program, etc. are collectively referred to simply as a program. Note that, when the word program is used in this disclosure, it may include only the program recipe, only the control program, or both. The RAM 291b is configured as a memory area (work area) in which the programs, data, etc. read by the CPU 291a are temporarily stored.

[0061] The I / O port 291d is connected to the above-mentioned MFCs 252a to 252c, valves 253a to 253c, valves 243a, 243b, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high frequency power supply 273, matching box 274, susceptor lifting mechanism 268, impedance variable mechanism 275, heater power adjustment mechanism 276, lamp heater 280, etc.

[0062] The CPU 291a is configured to read and execute a control program from the storage device 291c, and to read a process recipe from the storage device 291c in response to an input of an operation command from the input / output device 292. The CPU 291a is configured to control the opening adjustment operation of the APC valve 242, the opening / closing operation of the valve 243b, and the start / stop of the vacuum pump 246 through the I / O port 291d and the signal line A in accordance with the contents of the read process recipe. The CPU 291a is also configured to control the lifting operation of the susceptor lifting mechanism 268 through the signal line B in accordance with the contents of the process recipe. The CPU 291a is also configured to control the supply power amount adjustment operation (temperature adjustment operation) to the susceptor heater 217b by the heater power adjustment mechanism 276 and the impedance value adjustment operation by the impedance variable mechanism 275 in accordance with the contents of the process recipe in accordance with the contents of the process recipe. The CPU 291a is also configured to be able to control the opening and closing operation of the gate valve 244 through a signal line D in accordance with the contents of the process recipe. The CPU 291a is also configured to be able to control the operations of the RF sensor 272, the matching box 274, and the high frequency power supply 273 through a signal line E in accordance with the contents of the process recipe. The CPU 291a is also configured to be able to control the flow rate adjustment operation of various gases by the MFCs 252a to 252c and the opening and closing operation of the valves 253a to 253c and 243a in accordance with the contents of the process recipe. The CPU 291a is also configured to be able to control the heating operation (temperature adjustment operation) by the lamp heater 280 through a signal line G in accordance with the contents of the process recipe. The CPU 291a may also control the operations of other device components than those described above.

[0063] The controller 291 can be configured by installing the above-mentioned program stored in an external storage device (for example, a magnetic disk such as a magnetic tape, a flexible disk, and a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card) 293 into a computer. The storage device 291c and the external storage device 293 are configured as computer-readable recording media on which a program is recorded. Hereinafter, these are collectively referred to as simply a recording medium. In this disclosure, when the term recording medium is used, it may include only the storage device 291c alone, only the external storage device 293 alone, or both. Note that the program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 293.

[0064] (2) Substrate processing Next, a substrate processing process according to an embodiment of the present disclosure will be described mainly with reference to FIG. 4. FIG. 4 is a flow diagram showing the substrate processing process according to the present embodiment. The substrate processing process according to the present embodiment is performed by the above-mentioned substrate processing apparatus 100 as one step in a manufacturing process of a semiconductor device such as a flash memory. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by a controller 291.

[0065] The term "substrate" used in this specification may mean the substrate itself or a laminate of the substrate and a predetermined layer or film formed on its surface. The term "surface of the substrate" used in this specification may mean the surface of the substrate itself or the surface of a predetermined layer or the like formed on the substrate. When described in this specification, "forming a predetermined layer on a substrate" may mean forming a predetermined layer directly on the surface of the substrate itself or forming a predetermined layer on a layer or the like formed on the substrate. When used in this specification, the term "wafer" is synonymous with the term "substrate".

[0066] (Substrate loading process S110) First, the susceptor lifting mechanism 268 lowers the susceptor 217 to a transfer position of the substrate 200, and the substrate lifting pins 266 penetrate the through holes 217a of the susceptor 217. Next, the gate valve 244 is opened, and the substrate 200 is loaded into the processing chamber 201 from a vacuum transfer chamber adjacent to the processing chamber 201 using a substrate transfer mechanism (not shown). The loaded substrate 200 is supported in a horizontal position on the substrate lifting pins 266 protruding from the surface of the susceptor 217. Then, the gate valve 244 is closed, and the susceptor lifting mechanism 268 lifts the susceptor 217 to a substrate processing position of the substrate 200, and the substrate 200 is placed on the upper surface of the susceptor 217. At this time, the substrate 200 placed on the susceptor 217 is disposed so as to be located in the substrate processing space 201b below the lower end of the resonance coil 212.

[0067] (Heating and evacuation process S120) Next, the temperature of the substrate 200 carried into the processing chamber 201 is increased. Here, the susceptor heater 217b is preheated, and the lamp heater 280 is turned on to increase the temperature of the substrate 200 held on the susceptor 217 to a predetermined value, for example, within a range of 700 to 900° C. At this time, most of the light emitted from the lamp heater 280 for heating the substrate 200 is reflected into the processing chamber 201 without being absorbed by the upper vessel 210, as described later, and is absorbed by the substrate 200, thereby efficiently heating the substrate 200. During the temperature increase of the substrate 200, the inside of the processing chamber 201 is evacuated by the vacuum pump 246 via the gas exhaust pipe 231 to set the pressure inside the processing chamber 201 to a predetermined value. The vacuum pump 246 is kept in operation at least until the substrate unloading step S160 described later is completed.

[0068] (Processing gas supply process S130) Next, the supply of the source gas and the reactive gas as the process gas is started. Specifically, the valves 253a and 253b are opened, and the supply of the source gas and the reactive gas into the process chamber 201 is started while controlling the flow rates by the MFCs 252a and 252b.

[0069] Moreover, the opening of the APC valve 242 is adjusted to control exhaust of the processing chamber 201 so that the pressure inside the processing chamber 201 becomes a predetermined value. In this manner, while the processing chamber 201 is appropriately exhausted, the supply of the source gas and the reactive gas is continued until the end of the plasma processing step S140 described later.

[0070] As the raw material gas, for example, an oxygen (O)-containing gas can be used. As the O-containing gas, for example, oxygen (O2) gas, nitrous oxide (NO) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, ozone (O3) gas, water vapor (HO gas), carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. can be used. As the O-containing gas, one or more of these can be used.

[0071] In addition, as the reactive gas, for example, a hydrogen (H)-containing gas can be used. As the H-containing gas, for example, hydrogen (H2) gas, deuterium (D2) gas, H2O gas, ammonia (NH3) gas, etc. can be used. As the H-containing gas, one or more of these can be used. Note that, when H2O gas is used as the O-containing gas, it is preferable to use a gas other than H2O gas as the H-containing gas, and when H2O gas is used as the H-containing gas, it is preferable to use a gas other than H2O gas as the O-containing gas.

[0072] As the inert gas, for example, nitrogen (N2) gas can be used, and other rare gases such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon (Xe) gas, etc. One or more of these can be used as the inert gas.

[0073] (Plasma treatment step S140) When the pressure in the processing chamber 201 becomes stable, the application of high-frequency power from the high-frequency power supply 273 to the resonant coil 212 is started. As a result, a high-frequency electromagnetic field is formed in the plasma generating space 201a to which the raw material gas and the reactive gas are supplied. This high-frequency electromagnetic field excites a doughnut-shaped induction plasma having the highest plasma density at a height position corresponding to the electrical midpoint of the resonant coil 212 in the plasma generating space 201a. For example, when an O-containing gas is used as the raw material gas and an H-containing gas is used as the reactive gas, the processing gas containing the plasma-like O-containing gas and H-containing gas is plasma-excited and dissociated, and reactive species such as O radicals (O active species) and O ions containing O, H radicals (H active species) and H ions containing H are generated.

[0074] Radicals and unaccelerated ions generated by the induced plasma are uniformly supplied to the surface of the substrate 200 held on the susceptor 217 in the substrate processing space 201b. For example, when an O-containing gas is used as the source gas and an H-containing gas is used as the reactive gas, the supplied radicals and ions react uniformly with, for example, a silicon layer on the surface, and modify the silicon layer into a silicon oxide layer with good step coverage.

[0075] After that, when a predetermined processing time, for example, 10 to 300 seconds, has elapsed, the power output from the high frequency power supply 273 is stopped to stop the plasma discharge in the processing chamber 201. In addition, the valves 253a and 253b are closed to stop the supply of the source gas and the reactive gas into the processing chamber 201. This completes the plasma processing step S140. In this specification, the processing time means the time the processing continues. This also applies to the following explanations.

[0076] (Vacuum evacuation process S150) After the supply of the source gas and the reactive gas is stopped, the processing chamber 201 is evacuated to a vacuum via the gas exhaust pipe 231. This causes the source gas and the reactive gas in the processing chamber 201, and exhaust gas generated by the reaction of these gases, to be exhausted to the outside of the processing chamber 201. Thereafter, the opening of the APC valve 242 is adjusted to adjust the pressure in the processing chamber 201 to the same pressure as that of a vacuum transfer chamber (not shown) adjacent to the processing chamber 201. The vacuum transfer chamber is the destination to which the substrate 200 is transferred.

[0077] (Substrate unloading process S160) When the inside of the processing chamber 201 reaches a predetermined pressure, the susceptor 217 is lowered to a substrate transfer position for the substrate 200, and the substrate 200 is supported on the substrate lift pins 266. Then, the gate valve 244 is opened, and the substrate 200 is transferred out of the processing chamber 201 using the substrate transfer mechanism. This completes the substrate processing process according to this embodiment.

[0078] FIG. 5 is a diagram for explaining the state inside the processing vessel 203 in the above-mentioned substrate processing step.

[0079] 5, the inside of the processing vessel 203 is mainly heated by radiant heat from the lamp heater 280, reflected heat from the substrate 200, the plasma generation space 201a during plasma generation, and the susceptor heater 217b. That is, the heat source of the heat rays is mainly the lamp heater 280, the plasma generation space 201a, and the susceptor heater 217b. In this embodiment, the substrate 200 is heated by the lamp heater 280 and the susceptor heater 217b, and the processing gas is excited into plasma by the plasma generating unit to process the heated substrate 200. This allows the substrate 200 to be heated efficiently.

[0080] Here, if ceiling portion 210b is made of transparent quartz, heat rays irradiated from lamp heater 280 and reflected by substrate 200 may pass through the transparent quartz and heat O-ring 301. That is, as the substrate temperature is increased during substrate processing, the temperature of O-ring 301 also increases, and may exceed the heat-resistant temperature of O-ring 301, for example, 300°C.

[0081] In the above embodiment, since the ceiling portion 210b is made of opaque quartz, it is possible to suppress the transmission of heat rays emitted from the lamp heater 280 and reflected by the substrate 200 placed on the susceptor 217, and to confine the reflected heat by the substrate 200 inside the processing vessel 203.

[0082] That is, the heat rays reflected by the substrate 200 are prevented from being directly irradiated onto the O-ring 301, and the temperature rise of the ceiling portion 210b due to the reflected heat trapped in the processing vessel 203 is suppressed, thereby preventing the O-ring 301 from being indirectly heated. This makes it possible to suppress the temperature of the O-ring 301 disposed on the upper portion of the ceiling portion 210b to 260° C. or lower, which is lower than the heat-resistant temperature of the O-ring 301, for example, 300° C. As a result, it becomes possible to suppress damage, deterioration, etc. of the O-ring 301 due to heating by the lamp heater 280.

[0083] In addition, in the above-described embodiment, since the side wall portion 210a is made of transparent quartz, it is possible to transmit the electromagnetic field generated by supplying high-frequency power to the resonant coil 212, making it easier to generate plasma in the plasma generation space 201a.

[0084] In addition, in this embodiment, when processing the substrate 200, the controller 291 controls the susceptor lifting mechanism 268 so that the substrate 200 is positioned below the lower end of the resonance coil 212. Therefore, even if the substrate 200 is positioned away from the lamp heater 280 across the plasma generation region, the substrate 200 can be efficiently heated by the heat reflected by the opaque quartz that constitutes the upper vessel 210.

[0085] <Other embodiments of the present disclosure> In the above embodiment, the entire ceiling portion 210b is made of opaque quartz, but the present disclosure is not limited to this. For example, at least the portion of the ceiling portion 210b adjacent to the manifold 300 may be made of opaque quartz. Also, at least the portion of the ceiling portion 210b above the upper end of the resonance coil 212 may be made of opaque quartz. In this embodiment, the same effects as those in the above embodiment can be obtained.

[0086] In the above embodiment, the side wall 210a is entirely made of transparent quartz, but the present disclosure is not limited thereto. For example, at least the part of the side wall 210a corresponding to the range from the upper end to the lower end of the resonant coil 212 constituting the plasma generating part may be made of transparent quartz. In other words, the part of the upper vessel 210 corresponding to the plasma generating space 201a (i.e., the part constituting the plasma generating space 201a) may be made of transparent quartz. In this embodiment, the same effect as the above embodiment can be obtained. In this embodiment, the part of the upper vessel 210 other than the part corresponding to the plasma generating space 201a is further made of opaque quartz, thereby suppressing the transmission of heat to the outside of the processing vessel 203, and substrate processing can be performed efficiently.

[0087] In the above embodiment, an example of performing an oxidation process on a substrate surface using plasma has been described, but the present invention may also be applied to a nitriding process using a nitrogen-containing gas as a processing gas. The present invention may also be applied to any technology that performs a process on a substrate using plasma, not limited to nitriding and oxidation processes. For example, the present invention may be applied to a modification process of a film formed on a substrate surface using plasma, a doping process, a reduction process of an oxide film, an etching process of the film, and an ashing process of a resist.

[0088] The above-described embodiments and modifications may be used in appropriate combination. The processing procedures and processing conditions in this case may be the same as those of the above-described embodiments and modifications.

[0089] Although the present disclosure has been described in detail with respect to specific embodiments and modifications, it will be apparent to those skilled in the art that the present disclosure is not limited to such embodiments and modifications, and that various other embodiments are possible within the scope of the present disclosure. [Explanation of symbols]

[0090] 100 Substrate processing apparatus 200 boards 203 Processing vessel 217 Susceptor (mounting table) 280 Lamp heater (heating part) 301 O-ring (sealing material, sealing part) 304 Transparent quartz sheet (sealing part)

Claims

1. a mounting table on which a substrate can be placed; a heating unit located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a processing vessel disposed below the heating unit, housing the mounting table, and having at least a portion adjacent to the heating unit made of opaque quartz; a seal unit configured to suppress transmission of heat rays reflected from the substrate by the opaque quartz and to maintain airtightness between the processing vessel and the heating unit by a seal member; A substrate processing apparatus comprising:

2. 2. The substrate processing apparatus according to claim 1, wherein said processing vessel has at least a ceiling portion and a side wall portion, said ceiling portion being made of said opaque quartz.

3. The substrate processing apparatus of claim 2 , wherein the opaque quartz is a natural material.

4. The substrate processing apparatus of claim 2 , wherein the opaque quartz is a synthetic material.

5. The substrate processing apparatus according to claim 2 , wherein the side wall portion is made of transparent quartz.

6. 2. The substrate processing apparatus of claim 1, further comprising a seal surface between said processing vessel and said heating unit, said seal surface being in contact with said processing vessel and said heating unit.

7. The substrate processing apparatus according to claim 2 , wherein the sealing portion includes a transparent quartz sheet and maintains airtightness of the ceiling portion in contact with the heating portion.

8. 3. The substrate processing apparatus according to claim 2, wherein the sealing member is an O-ring, and maintains airtightness of the ceiling portion in contact with the heating portion.

9. The substrate processing apparatus according to claim 8 , wherein the ceiling portion suppresses transmission of the heat rays reflected by the substrate, thereby preventing the O-ring from being heated by the heat rays.

10. The processing vessel defines a plasma generating space in which a processing gas is plasma-excited, and a substrate processing space communicating with the plasma generating space; a gas supply unit for supplying the processing gas to the plasma generating space; a plasma generating unit provided on an outer periphery of the processing vessel so as to surround the plasma generating space and configured to excite the processing gas into plasma; The substrate processing apparatus of claim 1 further comprising:

11. The substrate processing apparatus according to claim 1 , wherein the heating section includes a lamp heater.

12. a loading / unloading port at a lower portion of the processing vessel for loading / unloading the substrate; A drive mechanism for raising and lowering the mounting table; a control unit configured to be able to control the drive mechanism so as to raise and lower the mounting table to load and unload the substrate; The substrate processing apparatus of claim 1 further comprising:

13. The substrate processing apparatus according to claim 10 , wherein the heat rays are generated by using the heating unit as a heat source.

14. The substrate processing apparatus according to claim 10 , wherein the heat rays are generated from the plasma generating space as a heat source.

15. The substrate processing apparatus according to claim 2 , wherein the ceiling portion is thicker than the sidewall portion.

16. 11. The substrate processing apparatus according to claim 10, wherein the processing vessel has at least a ceiling and a sidewall, the ceiling being made of the opaque quartz, and a lower end of the ceiling being located higher than an upper end of the plasma generating section.

17. A drive mechanism for raising and lowering the mounting table; a control unit configured to be able to control the driving mechanism so that the substrate placed on the placement table is positioned below a lower end of the plasma generating unit; The substrate processing apparatus of claim 16 further comprising:

18. a heating unit located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a processing vessel located below the heating unit, configured to house the mounting table and at least a portion adjacent to the heating unit being made of opaque quartz; and a sealing unit configured to suppress transmission of heat rays reflected from the substrate by the opaque quartz and to maintain airtightness between the processing vessel and the heating unit by a sealing member, placing the substrate on a mounting table; heating the substrate by the heating unit; The method for manufacturing a semiconductor device comprising the steps of:

19. a heating unit located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a processing vessel located below the heating unit, configured to house the mounting table and at least a portion adjacent to the heating unit being made of opaque quartz; and a sealing unit configured to suppress transmission of heat rays reflected from the substrate by the opaque quartz and to maintain airtightness between the processing vessel and the heating unit by a sealing member, A step of placing a substrate on a mounting table; heating the substrate by the heating unit; A program for causing a computer to execute the above in the substrate processing apparatus.

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