Electronic components and charged particle beam irradiation device

Abstract

To provide an electronic component that increases the strength of a deflection electric field and reduces variations in the strength of the deflection electric field.SOLUTION: An electronic component includes a first substrate having a plurality of first through holes through which a plurality of charged particle beams passes respectively, a plurality of first electrodes respectively provided in the plurality of first through holes, each having a first end and a second end, a plurality of second electrodes respectively facing the plurality of first electrodes and having a third end respectively facing the first end and a fourth end respectively facing the second end, a plurality of third electrodes respectively connected to the first ends and extending toward the third ends, a plurality of fourth electrodes respectively connected to the second ends and extending toward the fourth ends, a plurality of fifth electrodes respectively connected to the third ends, respectively spaced apart from the third electrodes and each extending toward the first end, and a plurality of sixth electrodes respectively connected to the fourth ends, respectively spaced apart from the fourth electrodes and each extending toward the second end.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] FIELD OF THE PRESENT EMBODIMENTS The present invention relates to an electronic component and a charged particle beam irradiation device. [Background technology]

[0002] Lithography is a process technology that is responsible for the advancement of miniaturization of semiconductor devices. Lithography is an extremely important process technology. In recent years, with the increasing integration of LSIs, the circuit line width required for semiconductor devices has become finer year by year. Electron beam (EB) drawing technology inherently has excellent resolution. For this reason, mask patterns are drawn on mask blanks using electron beams.

[0003] An irradiation device using multiple electron beams (multi-beams) can significantly improve throughput compared to a device using a single electron beam. For example, in a drawing device using multiple beams, an electron beam emitted from an electron gun is passed through a shaping aperture with multiple holes to form multiple beams. Each electron beam constituting the multiple beams is blanked by a blanking aperture array. The electron beams that are not deflected by the blanking aperture array are irradiated onto a sample such as a mask blank. On the other hand, the electron beams that are deflected by the blanking aperture array are shielded (blanked).

[0004] The blanking aperture array has through holes through which the electron beams pass. A pair of electrodes is provided around the through holes. An electric field (deflection electric field) for deflecting the electron beams is generated between the pair of electrodes. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 3145149 specification Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide an electronic component and a charged particle beam irradiation device that increase the strength of a deflection electric field and reduce variations in the strength of the deflection electric field. [Means for solving the problem]

[0007] The electronic component of the embodiment includes a first substrate having a first substrate surface and a second substrate surface opposite the first substrate surface, the first substrate surface having a plurality of first through holes through which each of a plurality of charged particle beams passes, a plurality of first electrodes respectively provided in the plurality of first through holes, each having a first end and a second end, a plurality of second electrodes respectively provided in the plurality of first through holes, each facing the plurality of first electrodes, each having a third end opposite the first end and a fourth end opposite the second end, a plurality of third electrodes respectively connected to the first end and extending toward the third end, a plurality of fourth electrodes respectively connected to the second end and extending toward the fourth end, a plurality of fifth electrodes respectively connected to the third end, each spaced apart from the third electrodes and each extending toward the first end, and a plurality of sixth electrodes respectively connected to the fourth end, each spaced apart from the fourth electrodes and each extending toward the second end. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view of an electron beam drawing apparatus according to a first embodiment. [Diagram 2] 1 is a schematic diagram of a main part of an electronic component according to a first embodiment. [Diagram 3] 4 is a schematic cross-sectional view of a main part of the electronic component according to another aspect of the first embodiment. FIG. [Figure 4] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Diagram 5] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Figure 6] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Figure 7] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Figure 8] 11 is a graph showing changes in average electric field strength and electric field strength variation due to differences in electrode shapes. [Figure 9] FIG. 9 is a schematic top view showing an electrode according to the structure A shown in FIG. 8, which is a comparative example of the first embodiment. [Figure 10] 9 is a schematic top view showing an electrode according to the structure B shown in FIG. 8, which is a comparative example of the first embodiment. FIG. [Figure 11] 9 is a schematic top view showing an electrode according to the structure C shown in FIG. 8, which is a comparative example of the first embodiment. FIG. [Figure 12] 9 is a schematic top view showing an electrode according to the first embodiment, which is an electrode according to the structure D shown in FIG. 8. [Figure 13] 11 is a graph showing changes in average electric field strength due to differences in the length of a first electrode and the length of a second electrode. [Figure 14] 11 is a graph showing changes in electric field strength variations due to differences in the lengths of the first electrode and the second electrode. [Figure 15] FIG. 15 is a schematic top view showing an example of an electrode according to a structure E1, which is an example of the structure E shown in FIGS. 13 and 14 and is a comparative example of the first embodiment. [Figure 16] FIG. 15 is a schematic top view showing an example of the electrode according to the structure E2, which is an example of the structure E shown in FIGS. 13 and 14 and is an electrode of the first embodiment. [Figure 17] FIG. 15 is a schematic top view showing an example of the electrode according to the structure E3, which is an example of the structure E shown in FIGS. 13 and 14 and is an electrode of the first embodiment. [Figure 18] FIG. 15 is a schematic top view showing an example of an electrode according to the structure F1, which is an example of the structure F shown in FIGS. 13 and 14 and is a comparative example of the first embodiment. [Figure 19]FIG. 15 is a schematic top view showing an example of an electrode according to a structure F2, which is an example of the structure F shown in FIGS. 13 and 14 and is a comparative example of the first embodiment. [Figure 20] FIG. 15 is a schematic top view showing an example of an electrode according to a structure F3, which is an example of the structure F shown in FIGS. 13 and 14 and is a comparative example of the first embodiment. [Figure 21] 13 is a graph showing the relationship between the average electric field strength and the ratio (d1 / d2) of the distance d2 between the first electrode and the second electrode to the distance d1 between the third electrode and the fifth electrode, and the ratio (d3 / d2) of the distance d2 between the first electrode and the second electrode to the distance d3 between the fourth electrode and the sixth electrode. [Figure 22] 13 is a graph showing the relationship between the ratio (d1 / d2) of the distance d2 between the first electrode and the second electrode to the distance d1 between the third electrode and the fifth electrode, and the ratio (d3 / d2) of the distance d2 between the first electrode and the second electrode to the distance d3 between the fourth electrode and the sixth electrode, and the electric field strength variation. [Figure 23] FIG. 11 is a schematic top view of the electrode of the first embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode and the second electrode to the distance d1 between the third electrode and the fifth electrode, and the ratio (d3 / d2) of the distance d2 between the first electrode and the second electrode to the distance d3 between the fourth electrode and the sixth electrode are 0.09. [Figure 24] FIG. 11 is a schematic top view of the electrode of the first embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode and the second electrode to the distance d1 between the third electrode and the fifth electrode, and the ratio (d3 / d2) of the distance d2 between the first electrode and the second electrode to the distance d3 between the fourth electrode and the sixth electrode are 0.27. [Diagram 25] FIG. 11 is a schematic top view of the electrode of the first embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode and the second electrode to the distance d1 between the third electrode and the fifth electrode, and the ratio (d3 / d2) of the distance d2 between the first electrode and the second electrode to the distance d3 between the fourth electrode and the sixth electrode are 0.45. [Figure 26]FIG. 11 is a schematic top view of electrodes in a comparative embodiment of the first embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode and the second electrode to the distance d1 between the third electrode and the fifth electrode, and the ratio (d3 / d2) of the distance d2 between the first electrode and the second electrode to the distance d3 between the fourth electrode and the sixth electrode are 0.63. [Figure 27] FIG. 11 is a schematic top view of electrodes in a comparative embodiment of the first embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode and the second electrode to the distance d1 between the third electrode and the fifth electrode, and the ratio (d3 / d2) of the distance d2 between the first electrode and the second electrode to the distance d3 between the fourth electrode and the sixth electrode are 0.82. [Figure 28] FIG. 13 is a schematic top view of an electrode system that does not include a third electrode, a fourth electrode, a fifth electrode, and a sixth electrode. [Figure 29] 13 is a graph showing the relationship between the difference between the end positions of a third electrode, a fourth electrode, a fifth electrode and a sixth electrode, and the average electric field intensity and the electric field intensity variation. [Diagram 30] FIG. 30 is a schematic top view of an electrode according to the structure G in FIG. 29, which is a comparative example of the first embodiment. [Diagram 31] FIG. 30 is a schematic top view of the electrode according to the structure H of FIG. 29, which is the electrode of the first embodiment. [Diagram 32] FIG. 30 is a schematic top view of the electrode according to the structure I of FIG. 29, which is the electrode of the first embodiment. [Diagram 33] FIG. 30 is a schematic top view of the electrode according to the structure J in FIG. 29, which is the electrode of the first embodiment. [Diagram 34] FIG. 30 is a schematic top view of an electrode according to the structure K in FIG. 29, which is a comparative example of the first embodiment. [Diagram 35] 13 is a diagram showing the relationship between the electrode length in the Y direction and the average electric field intensity and the electric field intensity variation. FIG. [Diagram 36] FIG. 36 is a schematic top view of the electrode according to the structure L of FIG. 35, which is the electrode of the first embodiment. [Figure 37] FIG. 36 is a schematic top view of an electrode according to the structure M of FIG. 35, which is an electrode of the first embodiment. [Figure 38]FIG. 36 is a schematic top view of the electrode according to the structure N of FIG. 35, which is the electrode of the first embodiment. [Figure 39] 13 is a graph showing the relationship between the average electric field strength and the electric field strength variation depending on the differences in the structure of the first electrode and the third electrode near the first end, the structure of the first electrode and the fourth electrode near the second end, the structure of the second electrode and the fifth electrode near the third end, and the structure of the second electrode and the sixth electrode near the fourth end. [Diagram 40] FIG. 40 is a schematic top view of an electrode according to the structure O of FIG. 39, which is an electrode of the first embodiment. [Diagram 41] FIG. 40 is a schematic top view of an electrode according to the structure P of FIG. 39, which is an electrode of the first embodiment. [Diagram 42] FIG. 40 is a schematic top view of an electrode according to structure Q of FIG. 39, which is an electrode of the first embodiment. [Diagram 43] FIG. 11 is a schematic top view of a main part of an electronic component according to a second embodiment. [Diagram 44] FIG. 11 is a schematic top view of a main part of an electronic component according to a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment will be described with reference to the drawings. In the drawings, the same or similar parts are denoted by the same or similar reference numerals.

[0010] In this specification, the same or similar components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0011] In this specification, in order to indicate the positional relationship of parts, etc., the upward direction of the drawing is described as "upper" and the downward direction of the drawing is described as "lower." In this specification, the concepts of "upper" and "lower" are not necessarily terms that indicate a relationship with the direction of gravity.

[0012] Hereinafter, a configuration using an electron beam (electron beam) will be described as an example of a charged particle beam (charged particle beam). However, the charged particle beam is not limited to an electron beam. The charged particle beam may be an ion beam.

[0013] (First embodiment) The electronic component of the embodiment includes a first substrate having a first substrate surface and a second substrate surface opposite the first substrate surface, the first substrate surface having a plurality of first through holes through which each of a plurality of charged particle beams passes, a plurality of first electrodes respectively provided in the plurality of first through holes, each having a first end and a second end, a plurality of second electrodes respectively provided in the plurality of first through holes, each facing the plurality of first electrodes, each having a third end opposite the first end and a fourth end opposite the second end, a plurality of third electrodes respectively connected to the first end and extending toward the third end, a plurality of fourth electrodes respectively connected to the second end and extending toward the fourth end, a plurality of fifth electrodes respectively connected to the third end, each spaced apart from the third electrodes and each extending toward the first end, and a plurality of sixth electrodes respectively connected to the fourth end, each spaced apart from the fourth electrodes and each extending toward the second end.

[0014] FIG. 1 is a schematic cross-sectional view of an electron beam drawing apparatus 150 of the present embodiment.

[0015] The electronic component 100 of this embodiment is used, for example, as a blanking aperture array (deflector) of an electron beam drawing apparatus 150. However, the use of the electronic component 100 is not limited to this.

[0016] The electron beam lithography device 150 includes an electron lens barrel 102 (multi-electron beam column) and a lithography chamber 103. In the electron lens barrel 102, an electron gun 201, an illumination lens 202, a shaping aperture array 203, an electronic component 100, a reduction lens 205, a limiting aperture member 206, an objective lens 207, a main deflector 208, and a sub-deflector 209 are arranged.

[0017] The electron gun 201 emits an electron beam 200. The electron gun 201 is an example of an irradiation source.

[0018] Here, an x-axis, a y-axis perpendicular to the x-axis, and a z-axis perpendicular to the x-axis and y-axis are defined. An electron gun 201 emits an electron beam 200 in the direction opposite to the z-axis. Also, a sample 101 is placed in a plane parallel to the xy plane.

[0019] An electron beam 200 emitted from an electron gun 201 illuminates a shaping aperture array 203 almost perpendicularly by an illumination lens 202. A multi-beam 109 is formed by the electron beam 200 passing through an opening of the shaping aperture array 203. The multi-beam 109 includes electron beams 120a, 120b, 120c, 120d, 120e, and 120f. The shape of each electron beam 120 reflects the shape of the opening of the shaping aperture array 203. The shape of each electron beam 120 is, for example, rectangular. Here, the number of openings 204 of the shaping aperture array 203 illustrated in FIG. 1 is six. However, the number of openings 204 of the shaping aperture array 203 is not limited to six. The number of multi-beams 109 formed by the shaping aperture array 203 illustrated in FIG. 1 is six. However, the number of multi-beams 109 formed by shaping aperture array 203 is not limited to six.

[0020] The electronic component 100 is provided under the shaping aperture array 203. The position of the electron beam 120 deflected by the electronic component 100 is shifted from the central hole of the limiting aperture member 206. The electron beam 120 deflected by the electronic component 100 is blocked by the limiting aperture member 206. On the other hand, the electron beam 120 not deflected by the electronic component 100 passes through the central hole of the limiting aperture member 206. In this manner, the electron beam is controlled to be turned on and off. Here, the number of the openings 108 of the electronic component 100 illustrated in FIG. 1 is six. However, the number of the openings 108 of the electronic component 100 is not limited to six.

[0021] The focus of the electron beam 120 that has passed through the limiting aperture member 206 is appropriately adjusted by the objective lens 207. After that, the electron beam 120 that has passed through the limiting aperture member 206 becomes a pattern image with a desired reduction ratio. After that, the electron beam 120 that has passed through the limiting aperture member 206 is deflected collectively by a main deflector 208 and a sub-deflector 209. After that, the electron beam 120 that has passed through the limiting aperture member 206 is irradiated onto each irradiation position on the sample 101 placed on the XY stage 105. Note that a mirror 210 for measuring the position of the XY stage 105 is arranged on the XY stage 105.

[0022] Fig. 2 is a schematic diagram of a main part of the electronic component 100 of this embodiment. Fig. 2(a) is a schematic top view of the main part of the electronic component 100 of this embodiment. Fig. 2(b) is a schematic cross-sectional view of the main part of the electronic component 100 of this embodiment, taken along the line A-A' shown in Fig. 2(a).

[0023] The first substrate 2 is, for example, a semiconductor substrate. The first substrate 2 is, for example, a Si (silicon) substrate. However, the first substrate 2 is not limited to a semiconductor substrate. For example, other substrates such as an insulating substrate can also be preferably used as the first substrate 2. Here, the insulating substrate is, for example, a ceramic substrate. Also, the insulating substrate is, for example, a glass epoxy substrate containing glass fiber and epoxy resin.

[0024] The first substrate 2 has a first substrate surface 6 and a second substrate surface 8 opposing the first substrate surface 6. In Figure 2, the first substrate surface 6 is shown disposed below the second substrate surface 8.

[0025] The first substrate 2 has a plurality of first through-holes 80. Each of the electron beams 120 included in the multi-beam 109 passes through each of the plurality of first through-holes 80.

[0026] 2, the shape of the multiple first through holes 80 in a plane parallel to the xy plane is a square. However, the shape of the multiple first through holes 80 in a plane parallel to the xy plane is not limited to a square.

[0027] The multiple first electrodes 10 are provided in the multiple first through holes 80, respectively. In the electronic component 100 shown in FIG. 2, the multiple first electrodes 10 are provided in the multiple first through holes 80, respectively. The first electrodes 10 have a first end 12 and a second end 14. The first electrodes 10 extend in the y direction. The first electrodes 10 are provided parallel to the y direction. When viewed from above, each of the multiple first electrodes 10 has a rectangular shape, for example.

[0028] The second electrodes 20 are provided in the first through holes 80, respectively. In the electronic component 100 shown in FIG. 2, the second electrodes 20 are provided in the first through holes 80, respectively. The second electrode 20 has a third end 22 facing the first end 12 and a fourth end 24 facing the second end 14. The second electrode 20 faces the first electrode 10. The second electrodes 20 each extend in the y direction. The second electrodes 20 are each provided parallel to the y direction. When viewed from above, the second electrodes 20 each have a rectangular shape, for example.

[0029] The multiple third electrodes 30 are provided in the multiple first through holes 80, respectively. In the electronic component 100 shown in FIG. 2, the multiple third electrodes 30 are provided in the multiple first through holes 80, respectively. The third electrodes 30 are connected to the first end portion 12. The third electrodes 30 extend toward the third end portion 22. The third electrodes 30 extend in the x-direction. The third electrodes 30 are each provided parallel to the x-direction. When viewed from above, the multiple third electrodes 30 each have a rectangular shape, for example.

[0030] The multiple fourth electrodes 32 are provided in the multiple first through holes 80, respectively. In the electronic component 100 shown in FIG. 2, the multiple fourth electrodes 32 are provided in the multiple first through holes 80, respectively. The fourth electrode 32 is connected to the second end 14. The fourth electrode 32 extends toward the fourth end 24. The fourth electrode 32 extends in the x-direction. The fourth electrodes 32 are each provided parallel to the x-direction. When viewed from above, the multiple fourth electrodes 32 each have a rectangular shape, for example.

[0031] The plurality of fifth electrodes 34 are provided in the plurality of first through holes 80, respectively. In the electronic component 100 shown in FIG. 2, the plurality of fifth electrodes 34 are provided in the plurality of first through holes 80, respectively. The fifth electrode 34 is connected to the third end 22. The fifth electrode 34 extends toward the first end 12. The fifth electrode 34 extends in the x-direction. The fifth electrode 34 is provided parallel to the x-direction. The fifth electrode 34 is provided spaced apart from the third electrode 30. When viewed from above, the shape of each of the plurality of fifth electrodes 34 is, for example, rectangular.

[0032] The sixth electrodes 36 are provided in the first through holes 80, respectively. In the electronic component 100 shown in FIG. 2, the sixth electrodes 36 are provided in the first through holes 80, respectively. The sixth electrode 36 is connected to the fourth end 24. The sixth electrode 36 extends toward the second end 14. The sixth electrode 36 extends in the x-direction. The sixth electrode 36 is provided parallel to the x-direction. The sixth electrode 36 is provided spaced apart from the fifth electrode 34. When viewed from above, the sixth electrodes 36 each have a rectangular shape, for example.

[0033] The distance d1 between the third electrode 30 and the fifth electrode 34 is preferably 10% or more and 40% or less of the distance d2 between the first electrode 10 and the second electrode 20.

[0034] The distance d3 between the fourth electrode 32 and the sixth electrode 36 is preferably 10% to 40% of the distance d2 between the first electrode 10 and the second electrode 20.

[0035] It is preferable that the length L1 of the first electrode 10 and the length L2 of the second electrode 20 are equal.

[0036] It is preferable that the length L3 of the third electrode 30 and the length L5 of the fifth electrode 34 are equal.

[0037] It is preferable that the length L4 of the fourth electrode 32 and the length L6 of the sixth electrode 36 are equal.

[0038] It is preferable that the distance d4 between the fifth end 31 of the third electrode 30 facing the fifth electrode 34 and the sixth end 33 of the fourth electrode 32 facing the sixth electrode 36 is equal to the distance d5 between the seventh end 35 of the fifth electrode 34 facing the third electrode 30 and the eighth end 37 of the sixth electrode 36 facing the fourth electrode 32.

[0039] The first insulating film (an example of an insulating film) 40 is provided inside each of the multiple first through holes 80, between the first electrode 10, the second electrode 20, the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36, and the first substrate 2. Furthermore, the insulating film 40 is provided in contact with the first substrate surface 6. The insulating film 40 provided inside each of the multiple first through holes 80 is continuous with the insulating film 40 provided in contact with the first substrate surface 6. However, the shape of the insulating film 40 is not limited to the above. The insulating film 40 includes, for example, SiOx (silicon oxide).

[0040] The circuit board (an example of a second board) 58 has a third board surface 60 and a fourth board surface 62. The third board surface 60 is provided opposite to the first board surface 6. The circuit board 58 is, for example, a silicon board. However, the circuit board 58 is not limited to a silicon board. The circuit board 58 has a plurality of second through holes 90.

[0041] The pair of the first through holes 80 and the second through holes 90 corresponds to the openings 108 (FIG. 1). Each of the first through holes 80 is provided above each of the second through holes 90.

[0042] 2 illustrates one first through hole 80 among a plurality of first through holes 80 in the first substrate 2. Also, in FIG 2, one second through hole 90 among a plurality of second through holes 90 in the circuit substrate 58 is illustrated.

[0043] The second insulating film 64 is provided on the third substrate surface 60 of the circuit board 58. The second insulating film 64 includes, for example, silicon oxide. However, the second insulating film 64 may be a laminated film of a film including silicon oxide and a film including SiNx (silicon nitride).

[0044] The multiple first plate electrodes 44 are provided below the first electrode 10 and below the insulating film 40 in contact with the first electrode 10. The multiple first plate electrodes 44 are each electrically and continuously connected to the first electrode 10.

[0045] The multiple first bonding electrodes 50 are provided below the multiple first plate electrodes 44, respectively. The multiple first bonding electrodes 50 are electrically connected to the multiple first plate electrodes 44, respectively. The multiple first bonding electrodes 50 are provided on the first substrate surface 6 with the insulating film 40 interposed therebetween.

[0046] The multiple second plate electrodes 46 are provided below the second electrode 20 and below the insulating film 40 in contact with the second electrode 20. The multiple second plate electrodes 46 are each electrically and continuously connected to the second electrode 20.

[0047] The plurality of second bonding electrodes 52 are provided below the plurality of second plate electrodes 46, respectively. The plurality of second bonding electrodes 52 are electrically connected to the plurality of second plate electrodes 46, respectively. The plurality of second bonding electrodes 52 are provided on the first substrate surface 6 with the insulating film 40 interposed therebetween.

[0048] The multiple third bonding electrodes 54 are provided below the multiple first bonding electrodes 50, respectively. The multiple third bonding electrodes 54 are electrically connected to the multiple first bonding electrodes 50, respectively. The multiple third bonding electrodes 54 are provided on the third substrate surface 60 with second insulating films 64 interposed therebetween.

[0049] The plurality of fourth bonding electrodes 56 are respectively provided below the plurality of second bonding electrodes 52. The plurality of fourth bonding electrodes 56 are respectively electrically connected to the plurality of second bonding electrodes 52. The plurality of fourth bonding electrodes 56 are respectively provided on the third substrate surface 60 with a second insulating film 64 interposed therebetween.

[0050] The z-direction length of the multiple first bonding electrodes 50, the z-direction length of the multiple second bonding electrodes 52, the z-direction length of the multiple third bonding electrodes 54, and the z-direction length of the multiple fourth bonding electrodes 56 are, for example, approximately 2 μm.

[0051] In the vicinity of the second substrate surface 8, the side surface of the first through holes 80 may have an exposed portion 82 (a portion where a part of the first substrate 2 is exposed). The side surface of the first through holes 80 may not have the exposed portion 82. When the first substrate 2 is a semiconductor substrate such as a Si (silicon) substrate, it is preferable that the side surface of the first through holes 80 is exposed and has the exposed portion 82 (a portion where a part of the first substrate 2 is exposed). For example, compared to the case where the insulating film 40 is provided, by having the exposed portion 82 on the side surface of the first through holes 80, the portion other than the electrode of the first through holes 80 in the vicinity of the second substrate surface 8 can be kept at the substrate potential. This is because there is an effect of suppressing the deflection of electrons due to charging.

[0052] The first substrate 2 has a plurality of recesses 4. Each recess 4 is provided on the side of the first through hole 80 between the insulating film 40 and the second substrate surface 8 so as to surround the first through hole 80. When the side of the plurality of first through holes 80 has an exposed portion 82 in the vicinity of the second substrate surface 8, the recess 4 is provided on the side of the first through hole 80 between the insulating film 40 and the exposed portion 82 so as to surround the first through hole 80. By providing the recess 4, it is possible to prevent the insulating film 40 from being exposed in a plane parallel to the xy plane including the recess 4. Therefore, it is possible to suppress the deflection of electrons due to the charging of the insulating film 40. Note that a plurality of recesses 4 may not be provided.

[0053] The plurality of control circuits 68 are provided in the second insulating film 64 below the first electrodes. The control circuits 68 are, for example, complementary metal-oxide-semiconductor (CMOS) circuits. The control circuits 68 have a function of applying a predetermined voltage, for example, about 5 V, to each of the plurality of first electrodes 10 via the wiring 66, the third bonding electrode 54, the first bonding electrode 50, and the first plate electrode 44 provided in the second insulating film 64.

[0054] The wiring 70 is provided in the second insulating film 64. The wiring 70 is connected to the fourth bonding electrode 56. The wiring 70 grounds the second electrode 20 via the second plate electrode 46, the second bonding electrode 52, and the fourth bonding electrode 56.

[0055] It should be noted that the first substrate 2 and the circuit substrate 58 may be grounded.

[0056] The multiple first electrodes 10, the multiple second electrodes 20, the multiple third electrodes 30, the multiple fourth electrodes 32, the multiple fifth electrodes 34 and the multiple sixth electrodes 36 include, for example, a metal nitride such as TiN (titanium nitride) or a metal such as W (tungsten).

[0057] The multiple first plate electrodes 44, the multiple second plate electrodes 46, the multiple first bonding electrodes 50, the multiple second bonding electrodes 52, the multiple third bonding electrodes 54, the multiple fourth bonding electrodes 56, the wiring 66 and the wiring 70 include a metal such as Au (gold) or Cu (copper).

[0058] FIG. 3 is a schematic top view of a main part of an electronic component 100a and an electronic component 100b according to another aspect of the present embodiment.

[0059] The shape of the first through hole 80 and the insulating film 40 when viewed from above may be, for example, an octagon as shown in FIG. 3(a). Or, they may be polygons with more than one side. Also, the shape of the first through hole 80 and the insulating film 40 when viewed from above may be, for example, a quadrangle with chamfered corners (R chamfered) as shown in FIG. 3(b). Also, in the case shown in FIG. 3(a) and FIG. 3(b), a first connection electrode 37a connecting the first end 12 and the third electrode 30, a second connection electrode 37b connecting the second end 14 and the fourth electrode 32, a third connection electrode 37c connecting the third end 22 and the fifth electrode 34, and a fourth connection electrode 37d connecting the fourth end 24 and the sixth electrode 36 may be provided.

[0060] 4 to 7 are schematic cross-sectional views showing a method for manufacturing the electronic component 100 of this embodiment.

[0061] First, a groove 162 extending in the Y direction is formed on the first substrate surface 6 of the first substrate 2 by, for example, RIE (Reactive Ion Etching). The width of the groove 162 is, for example, 2 μm or more and 6 μm or less. The depth of the groove 162 is, for example, about 60 μm (FIG. 4). Note that FIG. 4 illustrates grooves 162a and 162b.

[0062] Next, an insulating film 164 containing, for example, silicon oxide is formed inside the groove 162a, inside the groove 162b, and on the first substrate surface 6, for example, by a CVD (Chemical Vapor Deposition) method. Next, the first electrode 10 and the second electrode 20 containing a metal nitride such as TiN (titanium nitride) or a metal such as W (tungsten) are formed, for example, by a CVD method, on the insulating film 164 formed in the groove 162a and the groove 162b. Thereafter, the upper surfaces of the insulating film 164, the first electrode 10, and the second electrode 20 are planarized, for example, by etch-back or the like (FIG. 5).

[0063] Next, a first plate electrode 44 containing, for example, gold is formed over the first electrode 10 and over the insulating film 164 at the upper left of the first electrode 10. In addition, a second plate electrode 46 containing, for example, gold is formed over the second electrode 20 and over the insulating film 164 at the upper right of the second electrode 20. Note that the first plate electrode 44 and the second plate electrode 46 are formed by, for example, plating and photolithography.

[0064] Next, a first bonding electrode 50 containing, for example, gold is formed on the first plate electrode 44. Also, a second bonding electrode 52 containing, for example, gold is formed on the second plate electrode 46. Note that, for example, plating and photolithography are used to form the first bonding electrode 50 and the second bonding electrode 52 (FIG. 6).

[0065] Next, for example, the surface of the first substrate 2 opposite to the first substrate surface 6 is polished. This thins the first substrate 2. On the surface of the first substrate 2 opposite to the first substrate surface 6, a second substrate surface 8 is formed.

[0066] Next, the first substrate 2 between the first electrode 10 and the second electrode 20 is removed by, for example, the RIE method to form the first through-hole 80. Next, the insulating film 164 provided on the right side surface and below the first electrode 10 and the insulating film 164 provided on the left side surface and below the second electrode 20 are removed by, for example, Vapor HF (vaporous hydrofluoric acid). By removing the insulating film 164 in this manner, the insulating film 40 is formed. Moreover, the removal of the insulating film 40 by Vapor HF is performed isotropically. Therefore, a recess 4 is formed on the side surface of the first through-hole 80 under the insulating film 40 so as to surround the first through-hole 80 (FIG. 7).

[0067] Next, the third bonding electrode 54 of the circuit board 58 having the second through-hole 90, the second insulating film 64, the wiring 66, the control circuit 68, the wiring 70, the third bonding electrode 54, and the fourth bonding electrode 56 is bonded to the first bonding electrode 50. Also, the fourth bonding electrode 56 is bonded to the second bonding electrode 52. In this way, the electronic component 100 of the present embodiment is obtained.

[0068] Next, the effects of the electronic component 100 of this embodiment will be described.

[0069] When electron beams are deflected using electrodes made of gold, it is difficult to reduce the distance between the electrodes because the electrode shape cannot be well controlled.

[0070] In addition, in order to increase the deflection amount of the electron beam passing through the blanking aperture array, it is possible to increase the height of the electrodes provided on the blanking aperture array. This is to deflect the electron beam over as long a distance as possible by increasing the electrode height and lengthening the electrode distance in the Z direction. However, in the case of electrodes made of gold, it is difficult to increase the electrode height because the electrode shape controllability is poor.

[0071] Furthermore, since it was difficult to control the distance between the electrodes and the height of the electrodes, there was a problem in that variations occurred in the strength of the deflection electric field applied to each of the multiple electron beams passing through the blanking aperture array.

[0072] Therefore, the electronic component of the present embodiment includes a first substrate 2 having a first substrate surface 6 and a second substrate surface 8 opposed to the first substrate surface 6, a plurality of first electrodes 10 respectively provided in the first through holes 80 and each having a first end 12 and a second end 14, and a plurality of third electrodes 10 respectively provided in the first through holes 80 and opposed to the plurality of first electrodes 10, each having a third end 22 opposed to the first end 12 and a fourth end 24 opposed to the second end 14. The second electrode 20, a plurality of third electrodes 30 each connected to the first end 12 and extending toward the third end 22, a plurality of fourth electrodes 32 each connected to the second end 14 and extending toward the fourth end 24, a plurality of fifth electrodes 34 each connected to the third end 22, each spaced apart from the third electrode 30, and each extending toward the first end 12, and a plurality of sixth electrodes 36 each connected to the fourth end 24, each spaced apart from the fourth electrode 32, and each extending toward the second end 14. The plurality of first electrodes 10, the plurality of second electrodes 20, the plurality of third electrodes 30, the plurality of fourth electrodes 32, the plurality of fifth electrodes 34, and the plurality of sixth electrodes 36 are each provided in a plurality of first through holes 80.

[0073] A plurality of first electrodes 10, a plurality of second electrodes 20, a plurality of third electrodes 30, a plurality of fourth electrodes 32, a plurality of fifth electrodes 34, and a plurality of sixth electrodes 36 are provided in a plurality of first through holes 80. This improves the controllability of the electrode shape. For example, the control of the distance between the electrodes (the pitch between the electrodes) corresponds to the control of the distance between the grooves 162a and 162b in the manufacturing process. The control of the distance between the grooves 162a and 162b can be easily performed because it can be controlled using a lithography method. In addition, the height of the electrodes corresponds to the depth of the grooves 162 in the manufacturing process. The depth of the grooves 162 can also be easily performed because it can be controlled using an RIE method. Therefore, it is possible to provide an electronic component that increases the strength of the deflection electric field and reduces the variation in the strength of the deflection electric field.

[0074] Fig. 8 is a graph showing the change in average electric field intensity and electric field intensity variation due to differences in electrode shapes. The average electric field intensity and electric field intensity variation were calculated using the electron beam passing region R shown in Fig. 9 and subsequent figures. The electron beam passing region R has a square shape with one side having a length of half the distance between the first electrode 10 and the second electrode 20. The electron beam passing region R is provided in the center of the first through hole 80 when viewed from above.

[0075] Fig. 9 is a schematic top view showing an electrode according to the structure A shown in Fig. 8, which is a comparative example of this embodiment. In the case of the electrode according to the structure A, the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36 are not provided.

[0076] Fig. 10 is a schematic top view showing an electrode according to Structure B shown in Fig. 8, which is a comparative example of this embodiment. In the case of the electrode according to Structure B, the fifth electrode 34 and the sixth electrode 36 are not provided. In addition, in the case of Structure B, the distance between the third electrode 30 and the third end 22 is short. In addition, in the case of Structure B, the distance between the fourth electrode 32 and the fourth end 24 is short.

[0077] Fig. 11 is a schematic top view showing an electrode according to Structure C shown in Fig. 8, which is a comparative example of this embodiment. In the electrode according to Structure C, the third electrode 30 and the fourth electrode 32 are not provided. In addition, in the electrode according to Structure C, the distance between the fifth electrode 34 and the first end 12 is short. In addition, in the electrode according to Structure C, the distance between the sixth electrode 36 and the second end 14 is short.

[0078] Fig. 12 is a schematic top view showing an electrode according to structure D shown in Fig. 8. In the case of the electrode according to structure D, a third electrode 30, a fourth electrode 32, a fifth electrode 34, and a sixth electrode 36 are provided. The electrode according to structure D is an electrode according to this embodiment.

[0079] As shown in Fig. 8, in the case of the electrodes according to the structure D, the average electric field strength is the highest and the electric field strength variation is the smallest. Therefore, it is preferable to provide a third electrode 30 connected to the first end 12 and extending toward the third end 22, a fourth electrode 32 connected to the second end 14 and extending toward the fourth end 24, a fifth electrode 34 connected to the third end 22, spaced apart from the third electrode 30, and extending toward the first end 12, and a sixth electrode 36 connected to the fourth end 24, spaced apart from the fourth electrode 32, and extending toward the second end 14.

[0080] Fig. 13 is a graph showing the change in average electric field strength due to differences in the lengths of the first electrode 10 and the second electrode 20. Fig. 14 is a graph showing the change in electric field strength variation due to differences in the lengths of the first electrode 10 and the second electrode 20.

[0081] Fig. 15 is a schematic top view showing an electrode of structure E1, which is an example of structure E shown in Fig. 13 and Fig. 14 and is an electrode of this embodiment. The distance d4 between the third electrode 30 and the fourth electrode 32 in the Y direction and the distance d5 between the fifth electrode 34 and the sixth electrode 36 in the Y direction are 0.78 times the distance d2 between the first electrode 10 and the second electrode 20 in the X direction.

[0082] Fig. 16 is a schematic top view showing an electrode of structure E2, which is an example of structure E shown in Fig. 13 and Fig. 14 and is an electrode of this embodiment. A distance d4 between the third electrode 30 and the fourth electrode 32 in the Y direction and a distance d5 between the fifth electrode 34 and the sixth electrode 36 in the Y direction are equal to a distance d2 between the first electrode 10 and the second electrode 20 in the X direction.

[0083] Fig. 17 is a schematic top view showing an electrode of structure E3, which is an example of structure E shown in Fig. 13 and Fig. 14 and is an electrode of this embodiment. The distance d4 between the third electrode 30 and the fourth electrode 32 in the Y direction and the distance d5 between the fifth electrode 34 and the sixth electrode 36 in the Y direction are 1.41 times the distance d2 between the first electrode 10 and the second electrode 20 in the X direction.

[0084] Fig. 18 is a schematic top view showing an electrode according to structure F1, which is an example of structure F shown in Fig. 13 and Fig. 14 and is a comparative example of this embodiment. This electrode is obtained by removing the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36 from the electrode shown in Fig. 15.

[0085] Fig. 19 is a schematic top view showing an electrode according to structure F2, which is an example of structure F shown in Fig. 13 and Fig. 14 and is a comparative example of this embodiment. This electrode is obtained by removing the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36 from the electrode shown in Fig. 16.

[0086] Fig. 20 is a schematic top view showing an electrode according to structure F3, which is an example of structure F shown in Fig. 13 and Fig. 14 and is a comparative example of this embodiment. This electrode is obtained by removing the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36 from the electrode shown in Fig. 17.

[0087] Except for the case where the distance between the third electrode 30 and the fourth electrode 32 in the Y direction and the distance between the fifth electrode 34 and the sixth electrode 36 in the Y direction is 0.78 times the distance between the first electrode 10 and the second electrode 20 in the X direction (Figures 15 and 18), the electrodes of Structure E having the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36 are superior to the electrodes of Structure F in both average electric field strength (Figure 13) and electric field strength variation (Figure 14).

[0088] FIG. 21 is a graph showing the relationship between the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36, and the average electric field strength.

[0089] FIG. 22 is a graph showing the relationship between the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36, and the electric field strength variation.

[0090] FIG. 23 is a schematic top view of the electrodes of this embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36 are 0.09.

[0091] FIG. 24 is a schematic top view of the electrodes of this embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36 are 0.27.

[0092] FIG. 25 is a schematic top view of the electrodes of this embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36 are 0.45.

[0093] FIG. 26 is a schematic top view of the electrodes of this embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36 are 0.63.

[0094] FIG. 27 is a schematic top view of the electrodes of this embodiment, in which the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36 are 0.82.

[0095] Fig. 28 is a schematic top view of an electrode that does not have the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36, which is a comparative example of this embodiment. In other words, Fig. 28 is a schematic top view of electrodes in which the ratio (d1 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d1 between the third electrode 30 and the fifth electrode 34, and the ratio (d3 / d2) of the distance d2 between the first electrode 10 and the second electrode 20 to the distance d3 between the fourth electrode 32 and the sixth electrode 36 are 1.0.

[0096] In addition, in FIG. 21 to FIG. 28, it is assumed that d1 / d2 and d3 / d2 are equal.

[0097] When d1 / d2 and d3 / d2 are, for example, 0.1 or more and 0.4 or less, the electric field strength variation is sufficiently small. The electric field strength variation is smallest when d1 / d2 and d3 / d2 are 0.3. When d1 / d2 and d3 / d2 are 0.1 or more and 0.4 or less, a relatively high average electric field strength is ensured. For this reason, in order to ensure a high electric field strength while reducing the electric field strength variation, d1 / d2 and d3 / d2 are preferably 0.1 or more and 0.4 or less. In other words, the distance d1 between the third electrode 30 and the fifth electrode 34 is preferably 10% or more and 40% or less of the distance d2 between the first electrode 10 and the second electrode 20. More preferably, it is 30%. Moreover, the distance d3 between the fourth electrode 32 and the sixth electrode 36 is preferably 10% or more and 40% or less of the distance d2 between the first electrode 10 and the second electrode 20. More preferably, it is 30%.

[0098] FIG. 29 is a graph showing the relationship between the difference between the end position of the third electrode 30, the end position of the fourth electrode 32, the end position of the fifth electrode 34, and the end position of the sixth electrode 36 and the average electric field strength and the electric field strength variation.

[0099] Fig. 30 is a schematic top view of an electrode according to structure G in Fig. 29, which is a comparative example of this embodiment. The electrode according to structure G does not have a third electrode 30 and a fourth electrode 32. In addition, in the electrode according to structure G, the fifth electrode 34 is closest to the first end 12. In addition, in the electrode according to structure G, the sixth electrode 36 is closest to the second end 14.

[0100] Fig. 31 is a schematic top view of an electrode according to structure H in Fig. 29, which is an electrode of this embodiment. In the electrode according to structure H, the length of the fifth electrode 34 is shorter than the length of the fifth electrode 34 of structure G. In addition, in the electrode according to structure H, the length of the sixth electrode 36 is shorter than the length of the sixth electrode 36 of structure G. In addition, unlike the electrode according to structure G, the electrode according to structure H has a short third electrode 30 and a short fourth electrode 32.

[0101] 32 is a schematic top view of an electrode according to the structure I of FIG. 29, which is an electrode of this embodiment. In the electrode according to the structure I, the length of the fifth electrode 34 is shorter than that of the fifth electrode 34 of the structure H. In addition, in the electrode according to the structure I, the length of the sixth electrode 36 is shorter than that of the sixth electrode 36 of the structure H. In addition, in the electrode according to the structure I, the length of the third electrode 30 is longer than that of the third electrode 30 of the structure H. In addition, in the electrode according to the structure I, the length of the fourth electrode 32 is longer than that of the fourth electrode 32 of the structure H. In the electrode according to the structure I, the lengths of the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36 are all equal.

[0102] 33 is a schematic top view of an electrode according to structure J in FIG. 29 , which is an electrode of this embodiment. In the electrode according to structure J, the length of the fifth electrode 34 is shorter than the length of the fifth electrode 34 of structure I. In addition, in the electrode according to structure J, the length of the sixth electrode 36 is shorter than the length of the sixth electrode 36 of structure I. In addition, in the electrode according to structure J, the length of the third electrode 30 is longer than the length of the third electrode 30 of structure I. In addition, in the electrode according to structure J, the length of the fourth electrode 32 is longer than the length of the fourth electrode 32 of structure I.

[0103] Fig. 34 is a schematic top view of an electrode according to structure K in Fig. 29, which is a comparative example of this embodiment. The electrode according to structure K does not have the fifth electrode 34 and the sixth electrode 36. In the electrode according to structure K, the third electrode 30 is closest to the third end 22. In the electrode according to structure K, the fourth electrode 32 is closest to the fourth end 24.

[0104] The electrodes according to structure I in Fig. 32 have the largest average electric field strength and the smallest electric field strength variation. Therefore, it is preferable that the length of the third electrode 30 is equal to the length of the fifth electrode 34. It is also preferable that the length of the fourth electrode 32 is equal to the length of the sixth electrode 36.

[0105] FIG. 35 is a diagram showing the relationship between the electrode length in the Y direction and the average electric field intensity and the electric field intensity variation.

[0106] Fig. 36 is a schematic top view of an electrode according to the present embodiment, which is an electrode according to structure L in Fig. 35. In the electrode according to structure L, the length of the first electrode 10 in the Y direction is equal to the length of the second electrode 20 in the Y direction.

[0107] Fig. 37 is a schematic top view of an electrode according to the present embodiment, which is an electrode according to structure M in Fig. 35. In the electrode according to structure M, the length of the first electrode 10 in the Y direction is longer than the length of the second electrode 20 in the Y direction.

[0108] Fig. 38 is a schematic top view of an electrode according to the present embodiment, which is an electrode according to structure N in Fig. 35. In the electrode according to structure N, the length of the first electrode 10 in the Y direction is shorter than the length of the second electrode 20 in the Y direction.

[0109] 36, the electric field intensity variation is the smallest. Therefore, it is preferable that the length of the first electrode 10 is equal to the length of the second electrode 20.

[0110] FIG. 39 is a graph showing the relationship between the average electric field strength and the electric field strength variation depending on the differences in the structure of the first electrode 10 and the third electrode 30 near the first end 12, the structure of the first electrode 10 and the fourth electrode 32 near the second end 14, the structure of the second electrode 20 and the fifth electrode 34 near the third end 22, and the structure of the second electrode 20 and the sixth electrode 36 near the fourth end 24.

[0111] Fig. 40 is a schematic top view of an electrode according to the structure O of Fig. 39, which is an electrode of this embodiment. In the electrode according to the structure O, the structure near the third end 22 and the structure near the fourth end 24 are the same as the structure of the structure L shown in Fig. 36. On the other hand, in the electrode according to the structure O, the structure near the first end 12 and the structure near the second end 14 are different from the electrode of the structure L of Fig. 36. In the structure O, the electrode near the first end 12 and the electrode near the second end 14 are closer to the electron beam passing region R than the electrode near the first end 12 and the electrode near the second end 14 of the structure L.

[0112] Fig. 41 is a schematic top view of an electrode according to the structure P in Fig. 39, which is an electrode of this embodiment. In the electrode according to the structure P, the structure near the third end 22 and the structure near the fourth end 24 are the same as the structure L shown in Fig. 36. On the other hand, in the electrode according to the structure P, the structure near the first end 12 and the structure near the second end 14 are different from the structure L in Fig. 36. In the structure P, the electrode near the first end 12 and the electrode near the second end 14 are closer to the electron beam passing region R than the electrode near the first end 12 and the electrode near the second end 14 of the structure O.

[0113] FIG. 42 is a schematic top view of an electrode according to the structure Q of FIG. 39, which is an electrode of this embodiment. In the electrode according to the structure Q, the structure near the first end 12 and the structure near the second end 14 are the same as those of the structure L shown in FIG. 36. On the other hand, in the electrode according to the structure Q, the structure near the third end 22 and the structure near the fourth end 24 are different from those of the structure L of FIG. 36. The electrodes near the third end 22 and the fourth end 24 in the structure Q are closer to the electron beam passing region R than the electrodes near the third end 22 and the fourth end 24 in the structure L. The electrodes near the third end 22 and the fourth end 24 in the structure Q are the same as the electrodes near the first end 12 and the second end 14 in the structure P folded back in the YZ plane.

[0114] As shown in FIG. 39, in any of Structure L, Structure O, Structure P, and Structure Q, there is no significant difference in the average electric field intensity and the electric field intensity variation.

[0115] It is difficult to manufacture the electrode structure near the first end 12, the second end 14, the third end 22, and the fourth end 24 into a square structure as shown in Fig. 2. The electrode structure near the first end 12, the second end 14, the third end 22, and the fourth end 24 may be, for example, an octagonal shape or a shape with chamfered corners (R chamfering) as shown in Fig. 3. The graph in Fig. 39 shows that the average electric field strength and the electric field strength variation do not change much even if the electrode structure near the first end 12, the second end 14, the third end 22, and the fourth end 24 is an octagonal shape or a square shape with chamfered corners (R chamfering).

[0116] In addition, in any of Structure L, Structure O, Structure P, and Structure Q, the distance d4 between the fifth end 31 of the third electrode 30 facing the fifth electrode 34 and the sixth end 33 of the fourth electrode 32 facing the sixth electrode 36 is equal to the distance d5 between the seventh end 35 of the fifth electrode 34 facing the third electrode 30 and the eighth end 37 of the sixth electrode 36 facing the fourth electrode 32. Therefore, it is preferable that the distance d4 is equal to the distance d5.

[0117] According to the electronic component and the charged particle beam irradiation apparatus of the present embodiment, it is possible to provide an electronic component and a charged particle beam irradiation apparatus that increase the strength of the deflection electric field and reduce the variation in the strength of the deflection electric field.

[0118] Second embodiment 43 is a schematic diagram of an electronic component 300 of this embodiment. Note that descriptions that overlap with the first embodiment will be omitted.

[0119] In electronic component 300, insulating film 40, first electrode 10, and second electrode 20 are formed in second through hole 90 of circuit board 58, not in first through hole 80 of first substrate 2. Similarly, in electronic component 300, third electrode 30, fourth electrode 32, fifth electrode 34, and sixth electrode 36 are formed in second through hole 90.

[0120] In this embodiment, the second through-hole 90 corresponds to the opening 108 (FIG. 1).

[0121] In the present embodiment, the second through hole 90 is an example of the first through hole 80 .

[0122] The electronic component and charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device that increase the strength of the deflection electric field and reduce variations in the strength of the deflection electric field.

[0123] Third embodiment 44 is a schematic diagram of an electronic component 500 of this embodiment. Note that descriptions that overlap with the first and second embodiments will be omitted.

[0124] In the electronic component 500, a first electrode 10, a second electrode 20, a third electrode 30, a fourth electrode 32, a fifth electrode 34, and a sixth electrode 36 are provided on the second insulating film 64. The first electrode 10, the second electrode 20, the third electrode 30, the fourth electrode 32, the fifth electrode 34, and the sixth electrode 36 contain, for example, gold.

[0125] In this embodiment, the second through-hole 90 corresponds to the opening 108 (FIG. 1).

[0126] The electronic component and charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device that increase the strength of the deflection electric field and reduce variations in the strength of the deflection electric field.

[0127] In addition, a charged particle beam irradiation device including a multi-charged particle beam irradiation device includes a charged particle beam drawing device that draws a mask pattern on a mask blank using a charged particle beam including an electron beam, and a charged particle beam inspection device that inspects the mask pattern by detecting secondary electrons generated by irradiating the mask pattern with an electron beam.

[0128] The electronic components described in the above embodiments are applicable to charged particle beam irradiation devices including a multi-charged particle beam irradiation device. In other words, the electronic components described in the above embodiments are applicable to charged particle beam inspection devices including a multi-charged particle beam inspection device, in addition to charged particle beam writing devices including a multi-charged particle beam writing device.

[0129] Although some embodiments and examples of the present invention have been described, these embodiments and examples are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims.

[0130] The above-described embodiments can be summarized as the following technical solutions. (Technical proposal 1) a first substrate having a plurality of first through holes through which a plurality of charged particle beams pass, the first substrate having a first substrate surface and a second substrate surface opposed to the first substrate surface; a plurality of first electrodes respectively provided in the plurality of first through holes, each having a first end and a second end; a plurality of second electrodes respectively provided in the plurality of first through holes, facing the plurality of first electrodes, and each having a third end facing the first end and a fourth end facing the second end; a plurality of third electrodes each connected to the first end and each extending toward the third end; a plurality of fourth electrodes each connected to the second end and each extending toward the fourth end; a plurality of fifth electrodes each connected to the third end portion, spaced apart from the third electrodes, and each extending toward the first end portion; a plurality of sixth electrodes each connected to the fourth end portion, each spaced apart from the fourth electrodes, and each extending toward the second end portion; An electronic component comprising: (Technical proposal 2) a distance between the third electrode and the fifth electrode is 10% or more and 40% or less of a distance between the first electrode and the second electrode; The distance between the fourth electrode and the sixth electrode is 10% or more and 40% or less of the distance between the first electrode and the second electrode. An electronic component as described in Technical Proposal 1. (Technical proposal 3) a distance between a fifth end of the third electrode facing the fifth electrode and a sixth end of the fourth electrode facing the sixth electrode is equal to a distance between a seventh end of the fifth electrode facing the third electrode and an eighth end of the sixth electrode facing the fourth electrode; An electronic component as described in Technical Scheme 1 or Technical Scheme 2. (Technical proposal 4) The length of the first electrode and the length of the second electrode are equal. An electronic component according to any one of technical proposals 1 to 3. (Technical proposal 5) the third electrode and the fifth electrode have the same length, The fourth electrode and the sixth electrode have the same length. An electronic component according to any one of technical proposals 1 to 4. (Technical proposal 6) the plurality of first electrodes, the plurality of second electrodes, the plurality of third electrodes, the plurality of fourth electrodes, the plurality of fifth electrodes, and the plurality of sixth electrodes are provided in the plurality of first through holes, respectively; An electronic component according to any one of technical solutions 1 to 5. (Technical proposal 7) the first substrate includes Si (silicon), the plurality of first electrodes, the plurality of second electrodes, the plurality of third electrodes, the plurality of fourth electrodes, the plurality of fifth electrodes, and the plurality of sixth electrodes each contain a metal nitride or W (tungsten); An electronic component according to any one of technical proposals 1 to 6. (Technical proposal 8) the first substrate and an insulating film provided between the first electrodes, the second electrodes, the third electrodes, the fourth electrodes, the fifth electrodes, and the sixth electrodes, An electronic component as described in Technical Proposal 6. (Technical proposal 9) The insulating film contains silicon oxide. Electronic components as described in Technical Proposal 8. (Technical proposal 10) the first substrate is a semiconductor substrate; In the vicinity of the second substrate surface, the side surfaces of the plurality of first through holes each have an exposed portion. Electronic components as described in Technical Proposal 8. (Technical proposal 11) the first substrate further has a recess provided on a side surface of the first through hole between the insulating film and the second substrate surface so as to surround the first through hole; An electronic component as described in Technical Proposal 10. (Technical proposal 12) a plurality of first bonding electrodes provided on the first substrate surface and electrically connected to the plurality of first electrodes, respectively; a plurality of second bonding electrodes provided on the first substrate surface and electrically connected to the plurality of second electrodes, respectively; a second substrate having a plurality of second through holes and a third substrate surface facing the first substrate surface; a plurality of third bonding electrodes provided on the third substrate surface and electrically connected to the plurality of first bonding electrodes, respectively; a plurality of fourth bonding electrodes provided on the third substrate surface and electrically connected to the plurality of second bonding electrodes, respectively; The electronic component according to technical solution 6, further comprising: (Technical proposal 13) the plurality of first bonding electrodes, the plurality of second bonding electrodes, the plurality of third bonding electrodes, and the plurality of fourth bonding electrodes contain Au (gold) or Cu (copper); An electronic component as described in Technical Proposal 12. (Technical proposal 14) A charged particle beam irradiation device comprising an electronic component according to any one of technical proposals 1 to 13. [Explanation of symbols]

[0131] 2: First board 4: Recess 6: First board surface 8: Second board surface 10: 1st electrode 12:First end 14:Second end 20: 2nd electrode 22:Third end 24: 4th end 30: 3rd electrode 31: 5th end 32: 4th electrode 33: 6th end 34: 5th electrode 35: 7th end 36: 6th electrode 37: 8th end 40: First insulating film (insulating film) 50: 1st junction electrode 52:Second bonding electrode 54:Third junction electrode 56: 4th junction electrode 60: Third board surface 80: First through hole 90: Second through hole 100: Electronic components 300: Electronic components 500: Electronic parts

Claims

1. a first substrate having a plurality of first through holes through which a plurality of charged particle beams pass, the first substrate having a first substrate surface and a second substrate surface opposed to the first substrate surface; a plurality of first electrodes provided in the plurality of first through holes, each having a first end and a second end; a plurality of second electrodes respectively provided in the plurality of first through holes and facing the plurality of first electrodes, each having a third end facing the first end and a fourth end facing the second end; a plurality of third electrodes each connected to the first end and each extending toward the third end; a plurality of fourth electrodes each connected to the second end and each extending toward the fourth end; a plurality of fifth electrodes each connected to the third end portion, spaced apart from the third electrodes, and each extending toward the first end portion; a plurality of sixth electrodes each connected to the fourth end portion, each spaced apart from the fourth electrodes, and each extending toward the second end portion; An electronic component comprising:

2. a distance between the third electrode and the fifth electrode is 10% or more and 40% or less of a distance between the first electrode and the second electrode, a distance between the fourth electrode and the sixth electrode is 10% or more and 40% or less of a distance between the first electrode and the second electrode; The electronic component according to claim 1.

3. a distance between a fifth end of the third electrode facing the fifth electrode and a sixth end of the fourth electrode facing the sixth electrode is equal to a distance between a seventh end of the fifth electrode facing the third electrode and an eighth end of the sixth electrode facing the fourth electrode; The electronic component according to claim 1.

4. The length of the first electrode and the length of the second electrode are equal. The electronic component according to claim 1.

5. the third electrode and the fifth electrode have the same length, The fourth electrode and the sixth electrode have the same length. The electronic component according to claim 1.

6. the first electrodes, the second electrodes, the third electrodes, the fourth electrodes, the fifth electrodes, and the sixth electrodes are provided in the first through holes, respectively; The electronic component according to claim 1.

7. the first substrate includes Si (silicon); the plurality of first electrodes, the plurality of second electrodes, the plurality of third electrodes, the plurality of fourth electrodes, the plurality of fifth electrodes, and the plurality of sixth electrodes each contain a metal nitride or W (tungsten); The electronic component according to claim 1.

8. the first substrate and an insulating film provided between the first electrodes, the second electrodes, the third electrodes, the fourth electrodes, the fifth electrodes, and the sixth electrodes, The electronic component according to claim 6.

9. The insulating film contains silicon oxide. The electronic component according to claim 8.

10. the first substrate is a semiconductor substrate; In the vicinity of the second substrate surface, each of the first through holes has an exposed portion. The electronic component according to claim 8.

11. the first substrate further has a recess provided on a side surface of the first through hole between the insulating film and the second substrate surface so as to surround the first through hole; The electronic component according to claim 10.

12. a plurality of first bonding electrodes provided on the first substrate surface and electrically connected to the plurality of first electrodes, respectively; a plurality of second bonding electrodes provided on the first substrate surface and electrically connected to the plurality of second electrodes, respectively; a second substrate having a plurality of second through holes and a third substrate surface facing the first substrate surface; a plurality of third bonding electrodes provided on the third substrate surface and electrically connected to the plurality of first bonding electrodes, respectively; a plurality of fourth bonding electrodes provided on the third substrate surface and electrically connected to the plurality of second bonding electrodes, respectively; The electronic component of claim 6 further comprising:

13. the first bonding electrodes, the second bonding electrodes, the third bonding electrodes, and the fourth bonding electrodes each contain Au (gold) or Cu (copper); The electronic component according to claim 12.

14. A charged particle beam irradiation device comprising the electronic component according to claim 1.

Images