Semiconductor device

Abstract

To provide a semiconductor device that can prevent malfunctions by suppressing the irradiation of a circuit for controlling electron beams with X-rays in a device that controls charged particle beams such as electron beams and irradiates, observes, and processes a target.SOLUTION: The semiconductor device includes a first substrate having a first substrate surface and a second substrate surface provided on the opposite side of the first substrate surface, a first through-hole penetrating the first substrate through which a charged particle beam passes, a first electrode and a second electrode arranged in positions facing each other in the vicinity of the first through hole, a peripheral circuit provided on the outer circumferential side of the first substrate with respect to the positions of the first through-hole, the first electrode and the second electrode, and a first shield that contains metal, provided between the first through-hole, the first electrode and the second electrode, and the peripheral circuit, and penetrates the first substrate.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor device. [Background technology]

[0002] There are many devices that control electron beams for industrial use, such as electron microscopes that use electron beams to observe surfaces, electron beam lithography devices that draw fine semiconductor patterns on photomasks or wafers, and inspection devices that scan surfaces with electron beams to detect defects.

[0003] The electron beam is controlled by deflecting the electron beam with a magnetic or electric field. The voltage applied to the deflection electrodes that generate the electric field is controlled by an electronic circuit via wiring. Here, to make the device smaller and faster, it is placed near the deflection electrodes that control the electron beam. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Patent Publication No. 8,546,767 [Non-patent literature]

[0005] [Non-Patent Document 1] H. Yasuda et.al.: Jpn. J. Appl. Phys. 32 (1993) 6012. Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to provide a semiconductor device that can suppress irradiation of X-rays to a circuit for controlling the electron beam and prevent malfunction in an apparatus that controls a charged particle beam such as an electron beam to irradiate, observe, process, etc. an object. [Means for solving the problem]

[0007] The semiconductor device of the embodiment includes a first substrate having a first substrate surface and a second substrate surface provided on the opposite side of the first substrate surface, a first through hole penetrating the first substrate and through which a charged particle beam passes, a first electrode and a second electrode arranged in opposing positions near the first through hole, a peripheral circuit provided on the outer periphery of the first substrate relative to the positions of the first through hole, the first electrode, and the second electrode, and a first shield including a metal that is provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit, penetrating the first substrate. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view of a multi-electron beam drawing apparatus according to a first embodiment. [Diagram 2] 1 is a schematic cross-sectional view of a semiconductor device according to a first embodiment. [Diagram 3] 4 is another example of a schematic top view of a main part of the semiconductor device according to the first embodiment. FIG. [Figure 4] 4 is another example of a schematic top view of a main part of the semiconductor device according to the first embodiment. FIG. [Diagram 5] 4 is another example of the first shield of the semiconductor device of the first embodiment. [Figure 6] 4 is another example of the first shield of the semiconductor device of the first embodiment. [Figure 7] 4 is another example of the first shield of the semiconductor device of the first embodiment. [Figure 8] FIG. 11 is a schematic cross-sectional view of a semiconductor device according to a second embodiment. [Figure 9] 5A to 5C are schematic cross-sectional views showing a method for manufacturing the semiconductor device according to the second embodiment. [Figure 10] 5A to 5C are schematic cross-sectional views showing a method for manufacturing the semiconductor device according to the second embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view of a semiconductor device according to a third embodiment. [Figure 12] FIG. 13 is a schematic cross-sectional view of a semiconductor device according to a fourth embodiment. [Figure 13] FIG. 13 is a schematic cross-sectional view of a semiconductor device according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment will be described with reference to the drawings. In the drawings, the same or similar parts are denoted by the same or similar reference numerals.

[0010] In this specification, the same or similar components are given the same reference numerals, and duplicated descriptions may be omitted. In this specification, in order to indicate the positional relationship of parts, etc., the upward direction of the drawing is described as "upper" and the downward direction of the drawing is described as "lower". In this specification, the concepts of "upper" and "lower" are not necessarily terms that indicate a relationship with the direction of gravity.

[0011] In this specification, a "shield" is an "X-ray shield."

[0012] (First embodiment) The semiconductor device of this embodiment includes a first substrate having a first substrate surface and a second substrate surface provided on the opposite side of the first substrate surface, a first through hole penetrating the first substrate and through which a charged particle beam passes, a first electrode and a second electrode arranged in opposing positions near the first through hole, a peripheral circuit provided on the outer periphery of the first substrate relative to the positions of the first through hole, the first electrode, and the second electrode, and a first shield including a metal that is provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit and penetrating the first substrate.

[0013] 1 is a schematic cross-sectional view of a multi-electron beam drawing apparatus 150 of this embodiment. The multi-electron beam drawing apparatus 150 is an example of a multi-charged particle beam drawing apparatus. In the following description, an electron beam (electron beam) is described as an example of a charged particle beam (charged particle beam).

[0014] The semiconductor device 100 of this embodiment is, for example, a blanking aperture array (deflector) of a multi-electron beam drawing apparatus 150.

[0015] The use of the semiconductor device 100 of this embodiment is not limited to the above. For example, the semiconductor device 100 of this embodiment is preferably used as a blanking device for an electron microscope. Here, the semiconductor device 100 of this embodiment will be described using a multi-electron beam lithography device 150 as an example.

[0016] The multi-electron beam lithography system 150 includes an electron lens barrel 102 and a lithography chamber 103. In the electron lens barrel 102, an electron gun 201, an illumination lens 202, a shaping aperture array 203, a semiconductor device 100 (blanking aperture array), a reduction lens 205, a limiting aperture member 206, an objective lens 207, a main deflector 208, and a sub-deflector 209 are arranged.

[0017] Here, an X-axis, a Y-axis perpendicular to the X-axis, and a Z-axis perpendicular to the X-axis and Y-axis are defined. The electron gun 201 emits an electron beam 220 in the direction opposite to the Z-axis direction. The sample 101 is placed in a plane parallel to the XY plane.

[0018] The electron beam 220 emitted from the electron gun 201 illuminates the shaping aperture array 203 almost perpendicularly by the illumination lens 202. Then, the electron beam 220 passes through the opening of the shaping aperture array 203 to form a multi-beam 109. The multi-beam 109 includes electron beams 120a, 120b, 120c, 120d, 120e, and 120f. The shape of each electron beam 120 reflects the shape of the opening of the shaping aperture array 203, and is, for example, a rectangular shape. Note that, although six openings of the shaping aperture array 203 are shown in FIG. 1, this is not limited. Six multi-beams 109 are shown in FIG. 1 formed by the shaping aperture array 203. However, the number of multi-beams 109 formed is not limited. The openings of the shaping aperture array 203 are arranged in a matrix, for example, 512 in each of the x and y directions.

[0019] The semiconductor device 100 is provided under a shaping aperture array 203. The electron beam 120 deflected by the semiconductor device 100 is shifted from the central hole of the limiting aperture member 206 and is blocked by the limiting aperture member 206. On the other hand, the electron beam 120 that is not deflected passes through the central hole of the limiting aperture member 206. This controls the on / off of the electron beam.

[0020] The electron beam 120 that has passed through the limiting aperture member 206 is focused by the objective lens 207 to become a pattern image with a desired reduction ratio, and is deflected collectively by the main deflector 208 and the sub-deflector 209. Then, the electron beam 120 is irradiated onto each irradiation position on the sample 101 placed on the XY stage 105.

[0021] FIG. 2 is a schematic cross-sectional view of the semiconductor device 100 of the present embodiment.

[0022] The first substrate 58 has a first substrate surface 54 and a second substrate surface 56 provided on the opposite side of the first substrate surface 54. The first substrate 58 is, for example, a silicon (Si) substrate. However, the first substrate 58 is not limited to a silicon substrate.

[0023] The first insulating film 64 is provided on the second substrate surface 56 of the first substrate 58. The first insulating film 64 includes, for example, silicon oxide. However, the first insulating film 64 may be a laminated film of a film including silicon oxide and a film including SiNx (silicon nitride). The first insulating film 64 has wiring 66 including, for example, TiN (titanium nitride) inside the first insulating film 64. The wiring 66 may be a multi-layer wiring including multiple wirings. The first electrode 10 is connected to an electric circuit provided on an external wiring board or the like (not shown) via, for example, the wiring 66, a via (not shown) provided in the first insulating film 64, and a bonding wire 68.

[0024] The first substrate 58 and the first insulating film 64 have a plurality of first through holes 108. In other words, the plurality of first through holes 108 penetrate the first substrate 58 and the first insulating film 64. Three first through holes 108, namely, a first through hole 108a, a first through hole 108b, and a first through hole 108c, are illustrated in FIG. 2. For example, each of the electron beams 120 passes through each of the first through holes 108. Note that the number of the first through holes 108 is not limited to this.

[0025] The first electrodes 10 are provided in the vicinity of each of the first through holes 108. In the semiconductor device 100 shown in Fig. 2, the first electrodes 10 are provided on the first insulating film 64 and adjacent to the first through holes 108. Fig. 2 illustrates the first electrode 10a provided in the vicinity of the first through hole 108a, the first electrode 10b provided in the vicinity of the first through hole 108b, and the first electrode 10c provided in the vicinity of the first through hole 108c.

[0026] The second electrodes 20 are provided in the vicinity of each of the first through holes 108. In the semiconductor device 100 shown in FIG. 2, the second electrodes 20 are provided on the first insulating film 64 adjacent to the first through holes 108. For example, the second electrodes 20 are provided facing the first electrodes 10 across the first through holes 108. However, the arrangement of the second electrodes 20 is not limited to the above arrangement. FIG. 2 illustrates the second electrodes 20a provided in the vicinity of the first through holes 108a, the second electrodes 20b provided in the vicinity of the first through holes 108b, and the second electrodes 20c provided in the vicinity of the first through holes 108c. The first electrodes 10 and the second electrodes 20 are respectively arranged in opposing positions in the vicinity of the first through holes 108.

[0027] The peripheral circuit 72 is provided in the first substrate. For example, the peripheral circuit 72 is formed on the second substrate surface 56. In FIG. 2, a peripheral circuit 72a and a peripheral circuit 72b are illustrated. The arrangement of the peripheral circuit 72 is not limited to that illustrated in FIG. 2. The peripheral circuit 72 is provided on the outer periphery of the first substrate 58 with respect to the arrangement positions of the first through-holes 108, the first electrodes 10, and the second electrodes 20. Here, the "outer periphery" means the "outer periphery" when the first through-holes 108, the first electrodes 10, and the second electrodes 20 are viewed from the center. The peripheral circuit 72 is, for example, a CMOS (Complimentary Metal-Oxide-Semiconductor) circuit.

[0028] The peripheral circuitry can control the charged particle beam by applying a voltage to the first electrode 10 or the second electrode 20. For example, the peripheral circuitry 72 has a function of applying a predetermined voltage, for example, about 5V, to each of the multiple first electrodes 10 through wiring or vias provided in the first insulating film 64 (not shown). On the other hand, the second electrode 20 is grounded, for example, through wiring or vias provided in the first insulating film 64 (not shown). As a result, an electric field is applied to the charged particle beam passing through the first through hole 108. The charged particle beam to which such an electric field is applied is deflected. Note that the voltages applied to the first electrode 10 and the second electrode 20 are not limited to this.

[0029] The first shield 30 is provided in the first substrate 58. The first shield 30 penetrates the first substrate 58. The first shield 30 is formed in the first substrate 58 by, for example, an embedding process. The process for forming the first shield 30 is not limited to the embedding process. For example, one end of the first shield 30 is exposed on the first substrate surface 54. The one end of the first shield 30 does not have to be exposed on the first substrate surface 54. For example, the other end of the first shield 30 is exposed on the second substrate surface 56 and contacts the first insulating film 64. The other end of the first shield 30 does not have to be exposed on the second substrate surface 56. The first shield 30 is provided between the first through hole 108, the first electrode 10, the second electrode 20, and the peripheral circuit 72 when viewed from the Z direction. The first shield 30 is provided at a position covering the inner side of the arrangement position of the peripheral circuit 72 when viewed from the first substrate surface 54. Here, "inside" means "inside" when viewed from the center of the plurality of first through-holes 108, the first electrode 10, and the second electrode 20. FIG. 2 illustrates the first shield 30a and the first shield 30b. The first shield 30 is provided to attenuate X-rays generated by bremsstrahlung due to irradiation of electron beams, thereby suppressing damage to the peripheral circuit 72. The first shield 30 can effectively attenuate X-rays generated by bremsstrahlung when the electron beam is irradiated on the first electrode 10, the second electrode 20, and the like provided in the vicinity of the first through-hole 108, in particular, thereby suppressing damage to the peripheral circuit 72.

[0030] The first shield 30 includes a metal. The metal is not particularly limited, but may include Al (aluminum), Ti (titanium), V (vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Zn (zinc), Ga (gallium), Zr (zirconium), Nb (niobium), Mo (molybdenum), Ru (ruthenium), Rh (rhodium), Pd (palladium), Ag (silver), Cd (cadmium), Sn (tin), Hf (hafnium), Ta (tantalum), W (tungsten), Re (rhenium), Os (osmium), Ir (iridium), Pt (platinum), Au (gold), Tl (thallium), Pb (lead), and the like. In particular, the first shield 30 preferably includes a heavy metal, and more preferably includes W or Au. This is because heavy metals have a high X-ray absorption rate and a high stopping power for X-electron beams.

[0031] In addition, between the wiring 66, the first electrode 10, the second electrode 20 and the first insulating film 64, and between the first shield 30 and the first substrate 58 and the first insulating film 64, a barrier metal containing, for example, TiN (titanium nitride) or the like (not shown) is provided.

[0032] FIG. 3 is another example of a schematic top view of a main part of the semiconductor device 100 of this embodiment. FIG. 3 is a schematic view assuming that the first substrate 58 has one first through hole 108. Note that some components are omitted in FIG. 3. The first shield 30c is provided to surround the first through hole 108, the first electrode 10a, and the second electrode 20a when viewed from the Z direction. The first shield 30d is provided to surround the first shield 30c when viewed from the Z direction. The peripheral circuit 72a and the peripheral circuit 72b are provided outside the first shield 30d.

[0033] FIG. 4 is another example of a schematic top view of the main part of the semiconductor device 100 of this embodiment. In FIG. 4, some components are omitted. The difference from the semiconductor device shown in FIG. 3 is that in addition to the first electrode 10a and the second electrode 20a, the electrodes 11a and 21a are provided. The first electrode 10a and the second electrode 20a are arranged opposite each other in the X direction. On the other hand, the electrodes 11a and 21a are arranged opposite each other in the Y direction. A predetermined voltage of, for example, about 5V is applied to the electrode 11a. The electrode 21a is, for example, grounded. The electrode configuration of this embodiment may be as shown in FIG. 4. The electrode configuration of this embodiment is not limited to those shown in FIG. 3 and FIG. 4.

[0034] Fig. 5 shows another example of the first shield 30 of the semiconductor device of the present embodiment. Note that in Fig. 5, some components are not shown.

[0035] The first shield includes a plurality of second shields spaced apart from each other, each extending in a first direction parallel to the first substrate surface, and each provided along a first straight line parallel to the first direction, and a plurality of third shields provided between the first through hole, the first electrode, the second electrode, and the plurality of second shields, each extending in the first direction, and each provided along a second straight line parallel to the first direction, wherein the second shields and the third shields have portions that do not overlap with each other in a second direction that is parallel to the first substrate surface and perpendicular to the first direction. The first shield includes at least two or more shield rows, each of which has a plurality of shield portions spaced apart from each other, each extending in the first direction parallel to the first substrate surface, and provided along a straight line parallel to the first direction, and the shield portions included in one shield row and the shield portions included in the other shield rows have portions that do not overlap with each other in the second direction that is parallel to the first substrate surface and perpendicular to the first direction.

[0036] The first shield 30 includes a shield 30e (one example of a plurality of second shields), a shield 30f (one example of a plurality of third shields), a shield 30g, and a shield 30h. Each of the shields 30e, 30f, 30g, and 30h is one example of a shield row. Note that the number of the shield rows included in the first shield 30 is not limited to the above.

[0037] The shield 30f is provided between the shield 30e, the first through-hole 108, the first electrode 10, and the second electrode 20. The shield 30g is provided between the shield 30f, the first through-hole 108, the first electrode 10, and the second electrode 20. The shield 30h is provided between the shield 30g, the first through-hole 108, the first electrode 10, and the second electrode 20.

[0038] The shield 30e includes a shield 30e1, a shield 30e2, a shield 30e3, a shield 30e4, and a shield 30e5 that are spaced apart from each other. The shields 30e1, 30e2, 30e3, 30e4, and 30e5 extend in the Y direction (an example of a first direction). The shields 30e1, 30e2, 30e3, 30e4, and 30e5 are provided along a straight line 31e (an example of a first straight line) that is parallel to the Y direction. The shields 30e1, 30e2, 30e3, 30e4, and 30e5 are examples of a plurality of shield portions. Note that the number of the shield portions included in the shield 30e is not limited to the above.

[0039] The shield 30f includes a shield 30f1, a shield 30f2, a shield 30f3, a shield 30f4, and a shield 30f5 that are spaced apart from each other. The shields 30f1, 30f2, 30f3, 30f4, and 30f5 extend in the Y direction (an example of a first direction). The shields 30f1, 30f2, 30f3, 30f4, and 30f5 are provided along a straight line 31f (an example of a first straight line) that is parallel to the Y direction. The shields 30f1, 30f2, 30f3, 30f4, and 30f5 are examples of a plurality of shield portions. Note that the number of the shield portions included in the shield 30f is not limited to the above.

[0040] Furthermore, when viewed from the X direction (an example of the second direction), the shields 30e1 and 30f1 have portions that do not overlap with each other. When viewed from the X direction, the shields 30e2 and 30f2 have portions that do not overlap with each other. When viewed from the X direction, the shields 30e3 and 30f3 have portions that do not overlap with each other. When viewed from the X direction, the shields 30e4 and 30f4 have portions that do not overlap with each other. When viewed from the X direction, the shields 30e5 and 30f5 have portions that do not overlap with each other.

[0041] The shield 30g includes a shield 30g1, a shield 30g2, a shield 30g3, a shield 30g4, and a shield 30g5 that are spaced apart from each other. The shields 30g1, 30g2, 30g3, 30g4, and 30g5 extend in the Y direction (an example of a first direction). The shields 30g1, 30g2, 30g3, 30g4, and 30g5 are provided along a straight line 31g (an example of a first straight line) that is parallel to the Y direction. The shields 30g1, 30g2, 30g3, 30g4, and 30g5 are examples of a plurality of shield portions. Note that the number of the shield portions included in the shield 30g is not limited to the above.

[0042] Furthermore, when viewed from the X direction (in the X direction), shields 30f1 and 30g1 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30f2 and 30g2 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30f3 and 30g3 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30f4 and 30g4 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30f5 and 30g5 have portions that do not overlap with each other.

[0043] The shield 30h includes a shield 30h1, a shield 30h2, a shield 30h3, a shield 30h4, and a shield 30h5 that are spaced apart from each other. The shields 30h1, 30h2, 30h3, 30h4, and 30h5 extend in the Y direction (an example of a first direction). The shields 30h1, 30h2, 30h3, 30h4, and 30h5 are provided along a straight line 31h (an example of a first straight line) that is parallel to the Y direction. The shields 30h1, 30h2, 30h3, 30h4, and 30h5 are examples of a plurality of shield portions. Note that the number of the shield portions included in the shield 30h is not limited to the above.

[0044] Furthermore, when viewed from the X direction (in the X direction), shields 30g1 and 30h1 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30g2 and 30h2 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30g3 and 30h3 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30g4 and 30h4 have portions that do not overlap with each other. When viewed from the X direction (in the X direction), shields 30g5 and 30h5 have portions that do not overlap with each other.

[0045] A similar first shield 30 is provided to sandwich the first through-hole 108, the first electrode 10, and the second electrode 20 in the Y direction. In addition, a similar first shield 30 is provided between the peripheral circuit 72b and the first through-hole 108, the first electrode 10, and the second electrode 20.

[0046] 6 shows another example of the first shield 30 of the semiconductor device of the present embodiment. Note that in FIG. 6, some components are not shown.

[0047] The first shield has a plurality of fourth shields spaced apart from each other and arranged in a line in a first direction parallel to the first substrate surface, and extending in a third direction intersecting the first direction and parallel to the first substrate surface, and one fourth shield among the plurality of fourth shields and another fourth shield adjacent to the one fourth shield have overlapping portions in a second direction parallel to the first substrate surface and intersecting perpendicularly to the first direction. The first shield 30 shown in Fig. 6 is an example of the fourth shield.

[0048] The first shield 30i1, the first shield 30i2, the first shield 30i3, the first shield 30i4, the first shield 30i5, the first shield 30i6, the first shield 30i7, the first shield 30i8, the first shield 30i9, and the first shield 30i10 are arranged side by side in the Y direction. Each of the first shields 30 extends in a direction parallel to the first substrate surface 54 and intersecting with the Y direction (an example of a third direction, a direction shifted 45 degrees clockwise from the X-axis when viewed from above). Note that the direction in which each of the first shields 30 extends is not limited to a direction shifted 45 degrees clockwise from the X-axis.

[0049] The first shield 30i1 and the first shield 30i2 adjacent to the first shield 30i1 have a portion that overlaps with each other in the X direction. The first shield 30i2 and the first shield 30i3 adjacent to the first shield 30i2 have a portion that overlaps with each other in the X direction. The first shield 30i3 and the first shield 30i4 adjacent to the first shield 30i3 have a portion that overlaps with each other in the X direction. The first shield 30i4 and the first shield 30i5 adjacent to the first shield 30i4 have a portion that overlaps with each other in the X direction. The first shield 30i5 and the first shield 30i6 adjacent to the first shield 30i5 have a portion that overlaps with each other in the X direction. The first shield 30i6 and the first shield 30i7 adjacent to the first shield 30i6 have a portion that overlaps with each other in the X direction. The first shield 30i7 and the first shield 30i8 adjacent to the first shield 30i7 have portions that overlap with each other in the X direction. The first shield 30i8 and the first shield 30i9 adjacent to the first shield 30i8 have portions that overlap with each other in the X direction. The first shield 30i9 and the first shield 30i10 adjacent to the first shield 30i9 have portions that overlap with each other in the X direction.

[0050] Similar first shields 30 are provided in the Y direction to sandwich the first through-hole 108, the first electrode 10, and the second electrode 20. Similar first shields 30 are also provided between the peripheral circuit 72b and the first through-hole 108, the first electrode 10, and the second electrode 20. The direction (angle) and orientation of the extension of each first shield 30, and the length and number of each first shield 30 are not limited to those described above.

[0051] Fig. 7 shows another example of the first shield 30 of the semiconductor device of the present embodiment. Note that some components are not shown in Fig. 7.

[0052] The first shield includes a plurality of fifth shields spaced apart from each other and arranged side by side in a first direction parallel to the first substrate surface, each extending in a third direction parallel to the first substrate surface and intersecting the first direction, and a plurality of sixth shields spaced apart from each other and arranged side by side in the first direction, each extending in a fourth direction parallel to the first substrate surface and intersecting the first and third directions, each connected to the fifth shield, and one fifth shield of the plurality of fifth shields and another fifth shield adjacent to the one fifth shield have overlapping portions in a second direction parallel to the first substrate surface and intersecting perpendicularly to the first direction.

[0053] The fifth shield 30j1, the fifth shield 30j2, the fifth shield 30j3, the fifth shield 30j4, the fifth shield 30j5, the fifth shield 30j6, the fifth shield 30j7, the fifth shield 30j8, and the fifth shield 30j9 are arranged side by side in the Y direction. Also, the fifth shield 30j1, the fifth shield 30j2, the fifth shield 30j3, the fifth shield 30j4, the fifth shield 30j5, the fifth shield 30j6, the fifth shield 30j7, the fifth shield 30j8, and the fifth shield 30j9 each extend in a direction parallel to the first substrate surface 54 and intersecting with the Y direction (an example of a third direction, a direction shifted 45 degrees clockwise from the X direction when viewed from above). Note that the direction in which each of the fifth shields 30j extends is not limited to a direction shifted 45 degrees clockwise from the X axis.

[0054] The sixth shield 30k1, the sixth shield 30k2, the sixth shield 30k3, the sixth shield 30k4, the sixth shield 30k5, the sixth shield 30k6, the sixth shield 30k7, the sixth shield 30k8, and the sixth shield 30k9 are arranged side by side in the Y direction. Also, the sixth shield 30k1, the sixth shield 30k2, the sixth shield 30k3, the sixth shield 30k4, the sixth shield 30k5, the sixth shield 30k6, the sixth shield 30k7, the sixth shield 30k8, and the sixth shield 30k9 each extend in a direction parallel to the first substrate surface 54 and intersecting with the Y direction and the third direction (an example of the fourth direction, a direction shifted 45 degrees counterclockwise from the X direction when viewed from above). Note that the direction in which each sixth shield 30k extends is not limited to a direction shifted 45 degrees counterclockwise from the X axis. The sixth shield 30k1, the sixth shield 30k2, the sixth shield 30k3, the sixth shield 30k4, the sixth shield 30k5, the sixth shield 30k6, the sixth shield 30k7, the sixth shield 30k8, and the sixth shield 30k9 are connected to the fifth shield 30j1, the fifth shield 30j2, the fifth shield 30j3, the fifth shield 30j4, the fifth shield 30j5, the fifth shield 30j6, the fifth shield 30j7, the fifth shield 30j8, and the fifth shield 30j9, respectively.

[0055] Also, the fifth shield 30j1 and the fifth shield 30j2 adjacent to the fifth shield 30j1 have a portion that overlaps with each other in the X direction. The fifth shield 30j2 and the fifth shield 30j3 adjacent to the fifth shield 30j2 have a portion that overlaps with each other in the X direction. The fifth shield 30j3 and the fifth shield 30j4 adjacent to the fifth shield 30j3 have a portion that overlaps with each other in the X direction. The fifth shield 30j4 and the fifth shield 30j5 adjacent to the fifth shield 30j4 have a portion that overlaps with each other in the X direction. The fifth shield 30j5 and the fifth shield 30j6 adjacent to the fifth shield 30j5 have a portion that overlaps with each other in the X direction. The fifth shield 30j6 and the fifth shield 30j7 adjacent to the fifth shield 30j6 have a portion that overlaps with each other in the X direction. The fifth shield 30j7 and the fifth shield 30j8 adjacent to the fifth shield 30j7 have portions that overlap with each other in the X direction. The fifth shield 30j8 and the fifth shield 30j9 adjacent to the fifth shield 30j8 have portions that overlap with each other in the X direction. Note that the direction (angle) and orientation of each fifth shield 30j extending, and the length and number of each fifth shield 30j are not limited to those described above.

[0056] In addition, the sixth shield 30k1 and the sixth shield 30k2 adjacent to the sixth shield 30k1 have a portion that overlaps with each other in the X direction. The sixth shield 30k2 and the sixth shield 30k3 adjacent to the sixth shield 30k2 have a portion that overlaps with each other in the X direction. The sixth shield 30k3 and the sixth shield 30k4 adjacent to the sixth shield 30k3 have a portion that overlaps with each other in the X direction. The sixth shield 30k4 and the sixth shield 30k5 adjacent to the sixth shield 30k4 have a portion that overlaps with each other in the X direction. The sixth shield 30k5 and the sixth shield 30k6 adjacent to the sixth shield 30k5 have a portion that overlaps with each other in the X direction. The sixth shield 30k6 and the sixth shield 30k7 adjacent to the sixth shield 30k6 have a portion that overlaps with each other in the X direction. The sixth shield 30k7 and the sixth shield 30k8 adjacent to the sixth shield 30k7 have portions that overlap with each other in the X direction. The sixth shield 30k8 and the sixth shield 30k9 adjacent to the sixth shield 30k8 have portions that overlap with each other in the X direction. Note that the direction (angle) and orientation of each sixth shield 30k extending, and the length and number of each sixth shield 30k are not limited to those described above.

[0057] Next, the effects of the semiconductor device of this embodiment will be described.

[0058] When the deflection electrodes, the aperture, etc. are irradiated with electron beams, X-rays are generated by bremsstrahlung. The peripheral circuit is, for example, an LSI (Large Scale Integration) composed of transistors formed on a silicon substrate. The peripheral circuit 72 is, for example, a CMOS (Complimentary Metal-Oxide-Semiconductor) circuit. When the peripheral circuit 72 is irradiated with X-rays, there is a risk that the peripheral circuit 72 may malfunction.

[0059] Therefore, the semiconductor device of the present embodiment includes a first shield 30 that is provided between the first through-hole 108, the first electrode 10, the second electrode 20, and the peripheral circuit 72, penetrates the first substrate 58, and contains a metal. This makes it possible to suppress irradiation of the peripheral circuit 72 with X-rays, thereby making it possible to suppress the above-mentioned malfunction.

[0060] The first shield 30 in the semiconductor device 100 of this embodiment is provided so as to penetrate the first substrate 58. In other words, the first shield 30 is provided inside the first substrate 58. Such a first shield 30 can efficiently block X-rays from entering from the X direction or the Y direction. Such a first shield 30 is preferably formed by an embedding process. However, the manufacturing method of the first shield 30 is not limited to the embedding process.

[0061] As an embodiment of the first shield, the first shield has a plurality of second shields each spaced apart from each other, each extending in a first direction parallel to the first substrate surface, and each arranged along a first straight line parallel to the first direction, and a plurality of third shields each extending in the first direction and arranged between the first through hole, the first electrode, the second electrode, and the plurality of second shields, each arranged along a second straight line parallel to the first direction, and the second shields each having a portion where the second shields and the third shields do not overlap with each other in a second direction parallel to the first substrate surface and perpendicular to the first direction. In this embodiment, a plurality of second shields spaced apart from each other are arranged along the first straight line, and a plurality of third shields spaced apart from each other are arranged along the second straight line. By spacing the individual second shields and the third shields from each other, the formation of the individual shields is facilitated and the circuit delay is reduced. And, since the third shield and the second shield have a portion where they do not overlap in the second direction, the irradiation of X-rays to the peripheral circuit 72 can be suppressed.

[0062] In addition, as an embodiment of the first shield, the first shield is preferably arranged in a line in a first direction parallel to the first substrate surface, spaced apart from each other, and has a plurality of fourth shields extending in a third direction intersecting the first direction and parallel to the first substrate surface, and one of the plurality of fourth shields and another fourth shield adjacent to the one fourth shield have overlapping portions in a second direction parallel to the first substrate surface and intersecting perpendicularly to the first direction. By spacing the individual fourth shields apart, the formation is made easier and circuit delay is reduced. And, since the adjacent fourth shields have overlapping portions in the second direction, irradiation of X-rays to the peripheral circuit 72 can be suppressed.

[0063] In addition, as an embodiment of the first shield 30, the first shield has a plurality of fifth shields arranged in a first direction parallel to the first substrate surface and spaced apart from each other, each extending in a third direction parallel to the first substrate surface and intersecting the first direction, and a plurality of sixth shields arranged in a first direction and spaced apart from each other, each extending in a fourth direction parallel to the first substrate surface and intersecting the first and third directions, each connected to the fifth shield, and a fifth shield of the plurality of fifth shields and another fifth shield adjacent to the fifth shield have overlapping portions in a second direction parallel to the first substrate surface and intersecting perpendicularly to the first direction. By spacing the individual fifth shields from each other, the formation of the individual shields is facilitated and the circuit delay is reduced. And, since the fifth shields adjacent to each other in the second direction have portions that do not overlap, the irradiation of X-rays to the peripheral circuit 72 can be suppressed. Also, by spacing the individual sixth shields from each other, the formation of the individual shields is facilitated and the circuit delay is reduced. Furthermore, since the sixth shields adjacent to each other in the second direction have portions where they do not overlap, irradiation of the peripheral circuit 72 with X-rays can be suppressed.

[0064] The first shield 30 preferably contains a heavy metal, and more preferably contains W or Au, because heavy metals have a high X-ray absorption rate and a high X-ray stopping power.

[0065] According to the semiconductor device of this embodiment, in an apparatus that controls a charged particle beam such as an electron beam to irradiate, observe, process, or the like an object, it is possible to provide a semiconductor device that can suppress irradiation of X-rays to a circuit for controlling the electron beam and prevent malfunction.

[0066] Second embodiment The semiconductor device of this embodiment is different from the semiconductor device of the first embodiment in that it further includes a second substrate provided on the first substrate, the second substrate having a third substrate surface facing the second substrate surface and a fourth substrate surface provided on the opposite side of the third substrate surface, a second through hole penetrating the second substrate and through which a charged particle beam passes, the second through hole provided on the first through hole, a first electrode provided in the second through hole, a second electrode provided in the second through hole, and a seventh shield, the seventh shield being provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit when viewed from above, penetrating the second substrate, and including a metal. Here, the description of the contents that overlap with the first embodiment will be omitted.

[0067] FIG. 8 is a schematic cross-sectional view of a semiconductor device 200 of the present embodiment.

[0068] The second substrate 2 is provided on top of the first substrate 58 and parallel to the first substrate 58. The second substrate 2 has a third substrate surface 6 opposing the second substrate surface 56, and a fourth substrate surface 8 provided on the opposite side of the third substrate surface 6.

[0069] The semiconductor device 200 is formed by, for example, bonding a second bonding electrode 50 provided on the second substrate 2 and a first bonding electrode 55 provided on the first substrate 58 together.

[0070] The second substrate 2 has a plurality of second through holes 106. In FIG. 8, the second through holes 106a, 106b, and 106c are illustrated. The second through holes 106a, 106b, and 106c are provided above the first through holes 108a, 108b, and 108c, respectively. Each of the electron beams 120 passes through each of the first through holes 108 and the second through holes 106. Note that the number of the second through holes 106 is not limited to that shown in FIG. 8.

[0071] For example, the size of the first substrate 58 in the XY plane is larger than the size of the second substrate 2 in the XY plane due to the connection between the bonding wires 68 and the wiring 66 of the first substrate 58.

[0072] The first electrode 10 and the second electrode 20 are provided in the second through hole 106 via a second insulating film 74. The first electrode 10a and the second electrode 20a are provided in the second through hole 106a via the second insulating film 74. The first electrode 10b and the second electrode 20b are provided in the second through hole 106b via the second insulating film 74. The first electrode 10c and the second electrode 20c are provided in the second through hole 106c via the second insulating film 74. The second insulating film 74 includes, for example, SiOx (silicon oxide).

[0073] The first electrode 10 and the second electrode 20 are connected to an electric circuit provided on an external wiring board or the like (not shown) via, for example, the second bonding electrode 50, the first bonding electrode 55, a wiring layer (not shown) containing TiN, wiring 66, and a bonding wire 68. The second bonding electrode 50 and the first bonding electrode 55 are preferably made of a metal having low electrical resistance and ductility, such as gold (Au), aluminum (Al), Cu (copper), or Ir (iridium).

[0074] The seventh shield 32a is provided between the first electrode 10a, the second electrode 20a, the second through hole 106a, and the peripheral circuit 72a when viewed from the Z direction (above). The seventh shield 32b is provided between the first electrode 10c, the second electrode 20c, the second through hole 106c, and the peripheral circuit 72b when viewed from the Z direction (above). The seventh shield 32 penetrates the second substrate 2. The seventh shield 32 is provided at a position covering the inner side of the arrangement position of the peripheral circuit 72 when viewed from the first substrate surface 54. Here, the "inside" means the "inside" when viewed from the center of the plurality of first through holes 108, the first electrode 10, and the second electrode 20.

[0075] Here, the seventh shield 32a has an eighth shield 34a and a ninth shield 36a provided on the eighth shield 34a and containing a different material than the eighth shield 34a. The eighth shield 34a and the ninth shield 36a are in contact with each other. The seventh shield 32b has an eighth shield 34b and a ninth shield 36b provided on the eighth shield 34b and containing a different material than the eighth shield 34b. The eighth shield 34b and the ninth shield 36b are in contact with each other.

[0076] The eighth shield 34 and the ninth shield 36 include a metal. The metal is not particularly limited, but examples of the metal that can be used include Al (aluminum), Ti (titanium), V (vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Zn (zinc), Ga (gallium), Zr (zirconium), Nb (niobium), Mo (molybdenum), Ru (ruthenium), Rh (rhodium), Pd (palladium), Ag (silver), Cd (cadmium), Sn (tin), Hf (hafnium), Ta (tantalum), W (tungsten), Re (rhenium), Os (osmium), Ir (iridium), Pt (platinum), Au (gold), Tl (thallium), and Pb (lead). In particular, the eighth shield 34 and the ninth shield 36 preferably contain a heavy metal, and more preferably contain W or Au, because heavy metals have a high X-ray absorption rate and a high X-ray stopping power.

[0077] The eighth shield 34 is formed, for example, at the same time as the first electrode 10 and the second electrode 20. The width of the eighth shield 34 in the X direction is preferably equal to the width of the first electrode 10 or the width of the second electrode 20. Moreover, the eighth shield 34 preferably contains the same material as the first electrode 10 or the second electrode 20. In particular, it is particularly preferable that the first electrode 10 or the second electrode 20 and the eighth shield 34 contain W, which is easy to embed. In this case, it is preferable that the ninth shield 36 contains Au, which has a higher X-ray absorption rate and a higher X-ray stopping power.

[0078] 9 and 10 are schematic cross-sectional views showing a method for manufacturing the semiconductor device of this embodiment.

[0079] First, a groove is formed on the third substrate surface 6 of the second substrate 2, for example, by RIE (Reactive Ion Etching) using a silicon deep drilling device. Next, a second insulating film 74 containing, for example, silicon oxide is formed inside the groove, for example, by CVD. Next, for example, a barrier metal (not shown) is formed on the second insulating film 74, and then the first electrode 10, the second electrode 20, and the eighth shield 34 containing W are formed, for example, by CVD. Next, W formed on the second insulating film 74 and the like is removed, for example, by CMP (Chemical Mechanical Polishing).

[0080] Next, TiN (not shown) is formed by, for example, PVD sputtering, photolithography, and anisotropic etching to form a wiring layer that connects the first electrode 10 and the second electrode 20 to an electric circuit provided on an external wiring board (not shown). Next, a second bonding electrode 50 containing Au is formed on the second insulating film 74. The second bonding electrode 50 is connected to the first electrode 10 and the second electrode 20 via the above-mentioned wiring layer containing TiN (FIG. 9).

[0081] Next, the region where the second through hole 106 is to be formed is patterned by, for example, photolithography. Next, the region where the second through hole 106 is to be formed is etched to a predetermined depth by, for example, RIE (Reactive Ion Etching) using a silicon deep drilling device. Here, the oxide contained in the second insulating film 74 has a selectivity to silicon. Therefore, the second insulating film 74 on the side of the first electrode 10 and the second insulating film 74 on the side of the second electrode 20 are exposed. Next, a steam hydrofluoric acid treatment is performed to remove the oxide film on the side of the first electrode 10 and the second electrode 20. Next, the second substrate 2 on the opposite side of the third substrate surface 6 is ground to thin it, and the fourth substrate surface 8 is formed on the opposite side of the third substrate surface 6.

[0082] Next, a groove is formed in the portion where the ninth shield 36 is to be formed, for example, by using photolithography and RIE (Reactive Ion Etching) using a silicon deep drilling device. Next, the ninth shield 36 containing, for example, Au is embedded using a plating method or the like. Next, the region where the second through hole 106 is to be formed is etched from the fourth substrate surface 8 side, for example, by using photolithography and RIE (Reactive Ion Etching) using a silicon deep drilling device. This forms the second through hole 106 (FIG. 9).

[0083] Next, the first bonding electrode 55 of the separately formed first substrate 58 is bonded to the second bonding electrode 50 provided on the second substrate 2. In this way, the semiconductor device 200 of this embodiment is obtained.

[0084] In the semiconductor device 200 of the present embodiment, the eighth shield 34 and the ninth shield 36 suppress the irradiation of X-rays to the peripheral circuit 72. Furthermore, the first bonding electrode 55 and the second bonding electrode 50 bonded to each other also suppress the irradiation of X-rays to the peripheral circuit 72.

[0085] The semiconductor device of this embodiment also makes it possible to provide a semiconductor device that can suppress irradiation of X-rays to a circuit for controlling an electron beam and prevent malfunction in an apparatus that controls a charged particle beam such as an electron beam to irradiate, observe, process, etc. an object.

[0086] Third embodiment 11 is a schematic cross-sectional view of a semiconductor device 300 of this embodiment. This embodiment is similar to the semiconductor device 200 of the second embodiment, except that the seventh shield 32 is a single shield containing, for example, Au.

[0087] The semiconductor device of this embodiment also makes it possible to provide a semiconductor device that can suppress irradiation of X-rays to a circuit for controlling an electron beam and prevent malfunction in an apparatus that controls a charged particle beam such as an electron beam to irradiate, observe, process, etc. an object.

[0088] (Fourth embodiment) The semiconductor device of this embodiment is different from the semiconductor devices of the first to third embodiments in that the semiconductor device further includes a second substrate, which is provided on the first substrate in parallel with the first substrate and has a third substrate surface facing the second substrate surface and a fourth substrate surface provided on the opposite side of the third substrate surface, a second through hole penetrating the second substrate and through which a charged particle beam passes, provided on the first through hole, a first electrode provided in the second through hole, a second electrode provided in the second through hole, an eighth shield, which is provided between the first through hole, the first electrode, and the second electrode and the peripheral circuit when viewed from above, penetrating the second substrate, and includes a metal, and a ninth shield, which is provided above the eighth shield, between the first through hole, the first electrode, the second electrode, and the eighth shield in a plane parallel to the third substrate surface, and has a portion overlapping with the eighth shield in a direction parallel to the third substrate surface. Here, descriptions of contents that overlap with the first to third embodiments will be omitted.

[0089] 12 is a schematic cross-sectional view of the semiconductor device 400 of this embodiment. The ninth shield 36 is provided between the eighth shield 34 and the first electrode 10 and second electrode in the X direction. Furthermore, an upper portion of the eighth shield 34 and a lower portion of the ninth shield 36 overlap with each other in the X direction.

[0090] Contrary to the semiconductor device 400 shown in FIG. 12, the eighth shield 34 may be provided between the ninth shield 36 and the first electrode 10 and second electrode 20 in the X direction.

[0091] The semiconductor device of this embodiment also makes it possible to provide a semiconductor device that can suppress irradiation of X-rays to a circuit for controlling an electron beam and prevent malfunction in an apparatus that controls a charged particle beam such as an electron beam to irradiate, observe, process, etc. an object.

[0092] Fifth embodiment The semiconductor device of this embodiment differs from the semiconductor devices of the first to fourth embodiments in that it further includes a tenth shield provided in contact with the first substrate surface and the first shield, an eleventh shield provided in contact with the fourth substrate surface and the seventh shield, and the peripheral circuitry is provided between the tenth shield and the eleventh shield.

[0093] In addition, the semiconductor device of this embodiment differs from the semiconductor devices of the first to fourth embodiments in that it further includes a tenth shield provided in contact with the first substrate surface and the first shield, an eleventh shield provided in contact with the fourth substrate surface and the ninth shield, and the peripheral circuitry is provided between the tenth shield and the eleventh shield.

[0094] Here, the description of the contents overlapping with the first to fourth embodiments will be omitted.

[0095] FIG. 13 is a schematic cross-sectional view of a semiconductor device 500 of the present embodiment.

[0096] The tenth shield 90 is provided on the first substrate surface 54 in contact with the first shield 30. The tenth shield 90 extends in the XY plane. However, the tenth shield 90 does not overlap with the first through-hole 108 in the Z direction. This is because the electron beam cannot pass through.

[0097] The eleventh shield 92 is provided on the fourth substrate surface 8 in contact with the seventh shield 32 (ninth shield 36). The eleventh shield 92 extends in the XY plane. However, the eleventh shield 92 does not overlap with the second through-hole 106 in the Z direction. This is because the electron beam cannot pass through.

[0098] There is no particular limitation on the method for manufacturing the tenth shield 90 and the eleventh shield 92. For example, the tenth shield 90 and the eleventh shield 92 are formed by a machining process using Au.

[0099] The semiconductor device of this embodiment also makes it possible to provide a semiconductor device that can suppress irradiation of X-rays to a circuit for controlling an electron beam and prevent malfunction in an apparatus that controls a charged particle beam such as an electron beam to irradiate, observe, process, etc. an object.

[0100] Although some embodiments and examples of the present invention have been described, these embodiments and examples are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims.

[0101] The above-described embodiments can be summarized as the following technical solutions.

[0102] (Technical proposal 1) a first substrate having a first substrate surface and a second substrate surface provided on an opposite side to the first substrate surface; a first through hole penetrating the first substrate and through which a charged particle beam passes; a first electrode and a second electrode disposed in opposing positions near the first through hole; a peripheral circuit provided on an outer periphery of the first substrate with respect to positions of the first through hole, the first electrode, and the second electrode; a first shield including a metal and provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit, and penetrating the first substrate; A semiconductor device comprising: (Technical proposal 2) the first shield is provided at a position covering a side surface on an inner side of an arrangement position of the peripheral circuit when viewed from the first substrate surface; A semiconductor device according to technical proposal 1. (Technical proposal 3) The peripheral circuit is capable of controlling the charged particle beam by applying a voltage to the first electrode or the second electrode. A semiconductor device according to technical proposal 1. (Technical proposal 4) The first shield includes W or Au. A semiconductor device according to technical proposal 1. (Technical proposal 5) The first shield has at least two or more shield rows, each of the shield rows is spaced apart from one another, extends in a first direction parallel to the first substrate surface, and has a plurality of shield portions provided along straight lines parallel to the first direction; the shield portion included in one of the shield rows and the shield portion included in the other of the shield rows have portions that do not overlap with each other in a second direction that is parallel to the first substrate surface and perpendicular to the first direction, A semiconductor device according to technical proposal 1. (Technical proposal 6) The first shield is a plurality of fourth shields spaced apart from one another, arranged side by side in a first direction parallel to the first substrate surface, and extending in a third direction intersecting the first direction and parallel to the first substrate surface; A semiconductor device described in technical proposal 1, wherein one of the multiple fourth shields and another fourth shield adjacent to the one fourth shield have overlapping portions in a second direction that is parallel to the first substrate surface and intersects perpendicularly to the first direction. (Technical proposal 7) The first shield is a plurality of fifth shields spaced apart from one another and arranged in a line in a first direction parallel to the first substrate surface, each extending in a third direction parallel to the first substrate surface and intersecting the first direction; a plurality of sixth shields arranged side by side in the first direction and spaced apart from each other, each extending in a fourth direction parallel to the first substrate surface and intersecting the first direction and the third direction, and each connected to the fifth shield; having A semiconductor device described in technical proposal 1, wherein one of the multiple fifth shields and another fifth shield adjacent to the one fifth shield have overlapping portions in a second direction that is parallel to the first substrate surface and intersects perpendicularly to the first direction. (Technical proposal 8) a second substrate provided on the first substrate in parallel with the first substrate, the second substrate having a third substrate surface facing the second substrate surface and a fourth substrate surface provided on an opposite side to the third substrate surface, a second through hole penetrating the second substrate, through which the charged particle beam passes, and disposed above the first through hole; The first electrode provided in the second through hole; The second electrode provided in the second through hole; a seventh shield that is provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit, penetrates the second substrate, and contains a metal; The semiconductor device according to Technical Proposal 1, further comprising the second substrate having the (Technical proposal 9) the seventh shield is provided at a position covering an inner side surface of the peripheral circuit when viewed from the first substrate surface; A semiconductor device according to technical proposal 8. (Technical proposal 10) The seventh shield is The 8th Shield, a ninth shield disposed on the eighth shield, in contact with the eighth shield, and including a material different from that of the eighth shield; The semiconductor device according to technical proposal 8, (Technical proposal 11) a width of the eighth shield in a direction parallel to the third substrate surface is equal to a width of the first electrode in a direction parallel to the third substrate surface or a width of the second electrode in a direction parallel to the third substrate surface; A semiconductor device according to technical proposal 10. (Technical proposal 12) the eighth shield comprises the same material as the first electrode or the second electrode; A semiconductor device according to technical proposal 10. (Technical proposal 13) a second substrate provided on the first substrate in parallel with the first substrate, the second substrate having a third substrate surface facing the second substrate surface and a fourth substrate surface provided on an opposite side to the third substrate surface, a second through hole penetrating the second substrate, through which the charged particle beam passes, and disposed above the first through hole; The first electrode provided in the second through hole; The second electrode provided in the second through hole; the eighth shield, which is provided between the first through-hole, the first electrode, the second electrode, and the peripheral circuit, penetrates the second substrate, and contains a metal; a ninth shield that is provided between the first through hole, the first electrode, the second electrode, and the eighth shield in a plane parallel to the third substrate surface, and has a portion that overlaps with the eighth shield in a direction parallel to the third substrate surface; The semiconductor device according to Technical Solution 1 further comprises a second substrate having a (Technical proposal 14) The eighth shield or the ninth shield contains W or Au; A semiconductor device according to technical proposal 10 or 13. (Technical proposal 15) a tenth shield provided in contact with the first substrate surface and the first shield; an eleventh shield provided in contact with the fourth substrate surface and the seventh shield, the peripheral circuit being provided between the tenth shield and the eleventh shield; The semiconductor device according to Technical Solution 8, further comprising: (Technical proposal 16) a tenth shield provided in contact with the first substrate surface and the first shield; an eleventh shield provided in contact with the fourth substrate surface and the ninth shield, the peripheral circuit being provided between the tenth shield and the eleventh shield; The semiconductor device according to technical proposal 13, further comprising: (Technical proposal 17) an insulating film including wiring provided on the second substrate surface; Further equipped with The semiconductor device according to Technical Proposal 1, wherein the first shield is in contact with the insulating film. [Explanation of symbols]

[0103] 2: Second board 6: Third board surface 8: 4th board surface 10: 1st electrode 20: 2nd electrode 30: First Shield 30e: Second Shield 30f: 3rd shield 30i: 4th Shield 30j: 5th shield 30k: 6th Shield 32: 7th Shield 34: 8th Shield 36: 9th Shield 50:Second bonding electrode 54: First board surface 55: 1st junction electrode 56: Second board surface 58: First board 64: First insulating film 72: Peripheral circuit 74: Second insulating film 90: 10th Shield 92: 11th Shield 100: Semiconductor device 106: Second through hole 108: First through hole 200: Semiconductor device 300: Semiconductor device 400: Semiconductor device 500: Semiconductor device

Claims

1. a first substrate having a first substrate surface and a second substrate surface opposite the first substrate surface; a first through hole penetrating the first substrate and through which a charged particle beam passes; a first electrode and a second electrode disposed in opposing positions near the first through hole; a peripheral circuit provided on an outer periphery of the first substrate with respect to positions of the first through hole, the first electrode, and the second electrode; a first shield including a metal and provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit, and penetrating the first substrate; A semiconductor device comprising:

2. the first shield is provided at a position covering a side surface on an inner side of an arrangement position of the peripheral circuit when viewed from the first substrate surface; The semiconductor device according to claim 1.

3. The peripheral circuit is capable of controlling the charged particle beam by applying a voltage to the first electrode or the second electrode. The semiconductor device according to claim 1.

4. The first shield includes W or Au. The semiconductor device according to claim 1.

5. The first shield has at least two or more shield rows, each of the shield rows is spaced apart from one another, extends in a first direction parallel to the first substrate surface, and has a plurality of shield portions provided along straight lines parallel to the first direction; the shield portion included in one of the shield rows and the shield portion included in the other of the shield rows have portions that do not overlap with each other in a second direction that is parallel to the first substrate surface and perpendicular to the first direction, The semiconductor device according to claim 1.

6. The first shield is a plurality of fourth shields spaced apart from one another, arranged side by side in a first direction parallel to the first substrate surface, and extending in a third direction intersecting the first direction and parallel to the first substrate surface; 2. The semiconductor device according to claim 1, wherein one of the plurality of fourth shields and another fourth shield adjacent to the one fourth shield have overlapping portions in a second direction that is parallel to the first substrate surface and perpendicular to the first direction.

7. The first shield is a plurality of fifth shields spaced apart from one another and arranged in a line in a first direction parallel to the first substrate surface, each extending in a third direction parallel to the first substrate surface and intersecting the first direction; a plurality of sixth shields arranged in the first direction and spaced apart from each other, each extending in a fourth direction parallel to the first substrate surface and intersecting the first direction and the third direction, each connected to the fifth shield; having 2. The semiconductor device according to claim 1, wherein one of the plurality of fifth shields and another fifth shield adjacent to the one fifth shield have overlapping portions in a second direction that is parallel to the first substrate surface and perpendicular to the first direction.

8. a second substrate provided on the first substrate in parallel with the first substrate, the second substrate having a third substrate surface facing the second substrate surface and a fourth substrate surface provided on an opposite side to the third substrate surface, a second through hole penetrating the second substrate, through which the charged particle beam passes, and disposed above the first through hole; The first electrode provided in the second through hole; The second electrode provided in the second through hole; the seventh shield, which is provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit, penetrates the second substrate, and contains a metal; The semiconductor device according to claim 1 , further comprising the second substrate having a first insulating layer.

9. the seventh shield is provided at a position covering a side surface on an inner side of an arrangement position of the peripheral circuit when viewed from the first substrate surface; 9. The semiconductor device according to claim 8.

10. The seventh shield is An eighth shield; a ninth shield disposed on the eighth shield, in contact with the eighth shield, and including a material different from that of the eighth shield; 9. The semiconductor device according to claim 8, further comprising:

11. a width of the eighth shield in a direction parallel to the third substrate surface is equal to a width of the first electrode in a direction parallel to the third substrate surface or a width of the second electrode in a direction parallel to the third substrate surface; The semiconductor device according to claim 10.

12. the eighth shield includes the same material as the first electrode or the second electrode; The semiconductor device according to claim 10.

13. a second substrate provided on the first substrate in parallel with the first substrate, the second substrate having a third substrate surface facing the second substrate surface and a fourth substrate surface provided on an opposite side to the third substrate surface, a second through hole penetrating the second substrate, through which the charged particle beam passes, and disposed above the first through hole; The first electrode provided in the second through hole; The second electrode provided in the second through hole; the eighth shield is provided between the first through hole, the first electrode, the second electrode, and the peripheral circuit, penetrates the second substrate, and contains a metal; a ninth shield that is provided between the first through hole, the first electrode, the second electrode, and the eighth shield in a plane parallel to the third substrate surface, and has a portion that overlaps with the eighth shield in a direction parallel to the third substrate surface; The semiconductor device of claim 1 further comprising a second substrate having a

14. The eighth shield or the ninth shield contains W or Au. The semiconductor device according to claim 10 or 13.

15. a tenth shield provided in contact with the first substrate surface and the first shield; an eleventh shield provided in contact with the fourth substrate surface and the seventh shield, the peripheral circuit being provided between the tenth shield and the eleventh shield; The semiconductor device according to claim 8 , further comprising:

16. a tenth shield provided in contact with the first substrate surface and the first shield; an eleventh shield provided in contact with the fourth substrate surface and the ninth shield, the peripheral circuit being provided between the tenth shield and the eleventh shield; The semiconductor device according to claim 13 , further comprising:

17. an insulating film including wiring provided on the second substrate surface; Further equipped with 2. The semiconductor device according to claim 1, wherein the first shield is in contact with the insulating film.

Images