Semiconductor element transfer device and transfer method using the same

Abstract

To provide a semiconductor element transfer device and a transfer method that can stably vacuum-attach a semiconductor element in a plurality of suction sections to prevent and / or reduce warpage of the semiconductor element, and maintain and / or increase the temperature of the semiconductor element by applying heat to the semiconductor element in the transfer process.SOLUTION: A semiconductor element transfer device 100 includes a support part 110, a plurality of suction sections 120 provided on a lower surface 113 of the support part, a vacuum section 130 coupled to the support part and providing vacuum to the plurality of suction sections, and a heating section 140 that is coupled to the support part and heats the semiconductor element to be fixed to the plurality of suction sections. The heating section includes a heating plate 141 disposed on the lower surface of the support part. The heating plate is positioned on the lower surface of the support part to be surrounded by the plurality of suction sections.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor device transfer device and a transfer method using the same, and more particularly, to a semiconductor device transfer device capable of applying heat to the semiconductor device in a non-contact manner during the transfer process of the semiconductor device and a transfer method using the same. [Background technology]

[0002] Semiconductor devices manufactured through a semiconductor manufacturing process can be judged as pass or fail through an electrical test process. Such a test process can be performed using a tester that provides a test signal, and in this process, the semiconductor devices can be transported through a transport device that picks up or places them.

[0003] Meanwhile, when the semiconductor device is transferred between multiple processes through a transfer device, the temperature of the semiconductor device may decrease during the transfer process. Specifically, if the semiconductor device is transferred to the transfer device while a test is being performed in a high temperature environment, the temperature of the semiconductor device may decrease, and it may be necessary to raise the temperature of the semiconductor device again, which may increase the process time and reduce efficiency. Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention aims to provide a semiconductor element transfer device that can stably vacuum-suck semiconductor elements using a plurality of suction parts to prevent and / or reduce warping of the semiconductor elements, and can apply heat to the semiconductor elements during the transfer process to maintain and / or increase the temperature of the semiconductor elements. [Means for solving the problem]

[0005] According to one embodiment of the present invention, a semiconductor element transfer device includes a support portion, a plurality of suction portions provided on a lower surface of the support portion, a vacuum portion coupled to the support portion and providing a vacuum to the plurality of suction portions, and a heating portion coupled to the support portion and heating a semiconductor element fixed to the plurality of suction portions, wherein the heating portion includes a heating plate disposed on the lower surface of the support portion, and the heating plate may be disposed on the lower surface of the support portion to be surrounded by the plurality of suction portions.

[0006] In an embodiment, the heating plate may be spaced apart from the semiconductor device by a specified distance when the semiconductor device is attached to the plurality of suction portions.

[0007] In an embodiment, the heating plate may be positioned lower than the plurality of suction parts by a specified height based on the lower surface of the support part.

[0008] In an embodiment, the heating part may be connected to the support part by penetrating at least a portion of the support part such that the heating plate is exposed to the outside on the lower surface of the support part.

[0009] In an embodiment, the heating unit further includes a body having the heating plate disposed thereunder, and at least a portion of the body may extend through the support.

[0010] In one embodiment, the heating unit may include an infrared heater.

[0011] In one embodiment, the heating plate is disposed at the center of the lower surface of the support, and the plurality of suction parts may be three or more and surround the heating plate.

[0012] In an embodiment, the plurality of suction portions may include a first suction portion, a second suction portion, a third suction portion, and a fourth suction portion that are spaced apart from one another and surround the heating plate.

[0013] In an embodiment, the plurality of suction portions may be arranged such that the first suction portion, the second suction portion, the third suction portion, and the fourth suction portion are symmetrically arranged with respect to the heating plate.

[0014] In one embodiment, each of the first suction portion, the second suction portion, the third suction portion and the fourth suction portion may be disposed between an edge portion of the lower surface of the support portion and an edge portion of the heating plate.

[0015] In an embodiment, the plurality of suction parts may be made of a flexible material.

[0016] In one embodiment, each of the plurality of suction parts may be provided with a suction hole, and the vacuum part may be configured to pass through the support part and be connected to the suction hole of each of the plurality of suction parts to provide a vacuum to the suction hole.

[0017] In an embodiment, the apparatus further includes a camera unit connected to one of the supporting unit and the heating unit, the camera unit being capable of taking at least one of an image and a picture of the semiconductor device.

[0018] In an embodiment, the device may further include a connector that connects the camera unit to one of the support unit and the heating unit.

[0019] In one embodiment, in the operation of vacuum-sucking the semiconductor element, the heating unit may be configured to operate while the semiconductor element transfer device moves toward the semiconductor element.

[0020] A method for transferring a semiconductor device according to an embodiment of the present invention includes an operation of aligning a semiconductor device with a transfer device having a plurality of suction portions and lowering the transfer device toward the semiconductor device, an operation of vacuum-adsorbing the semiconductor device to the plurality of suction portions and transferring the semiconductor device, and an operation of placing the semiconductor device at a transfer position, releasing the vacuum suction, and raising the transfer device. In the operation of lowering the transfer device toward the semiconductor device, a heating portion provided in the transfer device may be operated to correspond to a temperature condition required for the semiconductor device.

[0021] In an embodiment, the transport device may further include a camera unit, and the method may further include an operation of aligning the semiconductor device with the camera unit and photographing the semiconductor device with the camera unit.

[0022] In one embodiment, the operation of photographing the semiconductor element may be performed at least one of before the operation of lowering the transfer device to vacuum-suck the semiconductor element and after the operation of releasing the vacuum suction of the semiconductor element and raising the transfer device.

[0023] In one embodiment, the transfer device may further include a support having a lower surface on which the plurality of adsorption portions are arranged, and the heating portion may include a heating plate arranged on the lower surface of the support so as to be surrounded by the plurality of adsorption portions.

[0024] In one embodiment, in an operation of vacuum-adsorbing and transferring the semiconductor element, the semiconductor element may be in close contact with the plurality of adsorption portions and spaced apart from the heating plate by a predetermined distance. Effect of the Invention

[0025] According to an embodiment of the present invention, the semiconductor element is vacuum-sucked through a plurality of suction portions located at the edge portion, thereby preventing or reducing warping of the semiconductor element due to vacuum suction.

[0026] In addition, according to one embodiment of the present invention, a heating plate is provided that is surrounded by a plurality of suction parts and exposed to the outside, so that heat can be applied to the semiconductor elements in a non-contact manner during the transfer process. This reduces heat loss from the semiconductor elements and eliminates the need for a process of reheating the semiconductor elements, thereby improving process efficiency. [Brief description of the drawings]

[0027] [Figure 1] FIG. 2 is a top perspective view of a transfer device according to one embodiment of the present invention. [Diagram 2] FIG. 2 is a bottom perspective view of a transfer device according to one embodiment of the present invention. [Diagram 3] FIG. 2 is a side view of a transfer device according to one embodiment of the present invention. [Figure 4] FIG. 2 is a bottom view of a transfer device according to one embodiment of the present invention. [Diagram 5] 4 is a diagram illustrating an operation of transferring a semiconductor device using a transfer apparatus according to an embodiment of the present invention; [Figure 6] 6 is a diagram illustrating an operation of transferring a semiconductor device using a transfer apparatus according to an embodiment different from the transfer apparatus of FIG. 5 . DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] Since the present invention can be modified in various ways and has various embodiments, specific embodiments are shown in the drawings and described in detail. However, this is not intended to limit the present invention to the specific embodiments, and it can be understood that the present invention includes all modifications, equivalents, and alternatives included in the spirit and technical scope of the present invention.

[0029] Terms such as first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only to distinguish one component from another. For example, a first component may be named a second component, and similarly, the second component may be named a first component, without departing from the scope of the invention. The term "and / or" includes any combination of items listed in plural or any of items listed in plural.

[0030] The terms used in this specification are merely used to describe specific embodiments and are not intended to limit the present invention. A singular expression includes a plural expression unless the context clearly indicates otherwise. In this application, the terms "include" or "have" specify the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, and should be understood not to preclude the presence or additional possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0031] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted as having an ideal or overly formal meaning unless expressly defined in this application.

[0032] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0033] FIG. 1 is a top perspective view of a transfer device 100 according to one embodiment of the present invention, FIG. 2 is a bottom perspective view of a transfer device 100 according to one embodiment of the present invention, FIG. 3 is a side view of a transfer device 100 according to one embodiment of the present invention, and FIG. 4 is a bottom view of a transfer device 100 according to one embodiment of the present invention.

[0034] 1 to 4, a transfer device 100 according to one embodiment of the present invention is a device that can transfer a semiconductor device (or semiconductor chip) while applying heat to the semiconductor device so as to maintain a predetermined temperature during the transfer process.

[0035] The transfer apparatus 100 for semiconductor devices according to an embodiment may include a support unit 110 , an adsorption unit 120 , a vacuum unit 130 , a heating unit 140 , a camera unit 150 and a connection unit 160 .

[0036] However, the structure of the transport device 100 is not limited to the embodiments shown in Figures 1 to 4, and in various embodiments, the transport device 100 may not include the camera unit 150 and the connecting unit 160 (e.g., see transport device 100' in Figure 6).

[0037] The support 110 may support other components included in the transfer device 100. For example, the support 110 may have a structure to which the suction unit 120, the vacuum unit 130, and the heating unit 140 can be connected and / or coupled, and may have a structure to which the suction unit 120, the vacuum unit 130, and the heating unit 140 can be connected and / or coupled. According to various embodiments, the support 110 may correspond to a support plate or a support frame. The support 110 may be made of a heat-resistant material to withstand heat generated by the heating unit 140.

[0038] The support 110 may include a lower surface 113 on which the adsorption unit 120 and the heating plate 141 (or heating plate) of the heating unit 140 are disposed, and an upper surface 111 facing the opposite direction of the lower surface 113. The support 110 may have a predetermined thickness. A space may be provided inside the support 110 in which at least a portion of the heating unit 140 may be disposed so that the heating plate 141 is exposed to the lower surface 113 of the support 110. In addition, a space may be provided inside the support 110 in which at least a portion of the vacuum unit 130 may be disposed so as to be connected to the adsorption unit 120.

[0039] At least a portion of the heating unit 140 and the vacuum unit 130 may be disposed on the upper surface 111 of the support unit 110. For example, the heating unit 140 and the vacuum unit 130 may be provided in a form extending or protruding from the upper surface 111 of the support unit 110.

[0040] The lower surface 113 of the support 110 may include an adsorption region 113b in which the adsorption unit 120 is disposed and a heating region 113a in which the heating unit 140 (i.e., the heating plate 141) is disposed. For example, the adsorption region 113b may be defined as a region in which the adsorption units 120 are disposed and exposed on the lower surface 113 of the support 110, and the heating region 113a may be defined as a region in which the heating plate 141 is disposed and exposed on the lower surface 113 of the support 110. The heating region 113a may be surrounded by a plurality of adsorption regions 113b. For example, the heating region 113a may be formed in a central region of the lower surface 113 of the support 110, and the plurality of adsorption regions 113b may be formed in corner regions or edge regions of the lower surface 113 of the support 110 to surround the heating region 113a.

[0041] 4, the support 110 has a rectangular shape, the heating region 113a is formed in the center of the lower surface 113 of the support 110, and the four suction regions 113b may be formed on the edges between the four corners of the support 110 and the four corners of the heating region 113a. The number and positions of the suction regions 113b are determined according to the number and positions of the suction parts 120. However, the shape of the support 110 and the number and / or positions of the suction regions 113b are not limited to the illustrated embodiment.

[0042] The suction unit 120 may vacuum-suck the semiconductor element. The suction unit 120 may be provided on the lower surface 113 of the support unit 110. The suction unit 120 may have a suction hole 120h formed therein for vacuum-sucking the semiconductor element. The suction hole 120h may be formed penetrating a central region of the suction unit 120. The suction unit 120 may come into contact with the semiconductor element. The suction unit 120 may be made of flexible rubber or silicone resin to absorb impact applied to the semiconductor element during the process of vacuum-sucking the semiconductor element. However, the material of the suction unit 120 is not limited to the above examples.

[0043] The suction holes 120h of the suction unit 120 may be connected to the vacuum unit 130 via the support unit 110. The suction unit 120 may be provided such that a vacuum is formed in the suction holes 120h by the vacuum unit 130. A predetermined through hole may be formed in the lower surface 113 of the support unit 110 to connect between the suction holes 120h and the vacuum unit 130. For example, the suction holes 120h may be fluidically connected to at least a portion of the vacuum unit 130 via the through hole formed in the support unit 110.

[0044] A plurality of suction parts 120 may be provided. According to the illustrated embodiment, the suction part 120 may include a first suction part 121, a second suction part 123, a third suction part 125, and a fourth suction part 127, so that the suction part 120 is composed of four suction parts 120. The four suction parts 120 may be provided at edges and / or corners of the lower surface 113 of the support part 110. This can prevent the semiconductor device from warping and stably suction when picking up and / or transferring the semiconductor device. The plurality of suction parts 120 are formed adjacent to edges and / or corners of the support part 110 and symmetrically with respect to the center of the support part 110, so that the semiconductor device can be stably vacuum-sucked even when the area of ​​the semiconductor device is equal to or larger than a predetermined size. For example, the plurality of suction parts 120 may be spaced apart from the center of the support part 110 by the same distance.

[0045] According to the illustrated embodiment, the four suction units 120 may be arranged to partially surround the heating plate 141 of the heating unit 140. The four suction units 120 may be arranged symmetrically with respect to the heating plate 141. For example, referring to FIG. 4, the first suction unit 121, the second suction unit 123, the third suction unit 125 and the fourth suction unit 127 may be arranged at equal distances from the center of the heating plate 141. Accordingly, during the transfer of the semiconductor device, the four suction units 120 vacuum-suck the edge portions of the semiconductor device, and the heating plate 141 applies heat to the center portions of the semiconductor device, thereby increasing the surface area of ​​the semiconductor device to which heat is transferred, thereby allowing for effective heat transfer.

[0046] According to the illustrated embodiment, the four suction members 120 may be disposed between four corner portions of the heating plate 141 and four corner portions of the lower surface 113 of the support part 110. However, without being limited thereto, according to various embodiments, the four suction members 120 may be disposed between four edge portions of the heating plate 141 and four edge portions of the lower surface 113 of the support part 110. Here, the corners refer to the vertices of the heating plate 141 and the lower surface 113 having a rectangular shape, and the edges refer to the sides of the heating plate 141 and the lower surface 113 having a rectangular shape.

[0047] 1 to 4 show one embodiment among various embodiments of the present invention, and the number and / or position of the suction parts 120 are not limited to the illustrated embodiment. According to various embodiments, the number of suction parts 120 may be five or more or less than four so as to partially surround the heating plate 141 on the lower surface 113 of the support part 110. For example, in order to stably suction the semiconductor device, it is preferable that the number of suction parts 120 is three or more, but an embodiment having less than three suction parts is not excluded.

[0048] In addition, the shapes of the support 110 and the heating plate 141 are not limited to those shown in the illustrated embodiment. According to various embodiments, the lower surface 113 of the support 110 and / or the heating plate 141 may be formed in a circular, elliptical, or other polygonal shape other than a rectangular shape. In such a case, the plurality of suction units 120 may be disposed on the lower surface 113 of the support 110 to surround the periphery of the heating plate 141.

[0049] The vacuum unit 130 may provide a vacuum to the suction unit 120 so that the semiconductor chip may be suctioned to the suction unit 120. For example, the vacuum unit 130 may form or remove a vacuum in the suction holes 120h of the suction unit 120 to suction the semiconductor chip to the suction unit 120 or release the suction. The vacuum unit 130 may include a vacuum pipe and a vacuum pump. For example, the vacuum unit 130 in FIGS. 1 to 4 shows a vacuum pipe, and although not shown, a vacuum pump may be connected to the vacuum pipe to provide a vacuum (or reduced pressure) to the vacuum pipe. The vacuum pipe is connected to the suction unit 120, and the vacuum (or reduced pressure) provided to the vacuum pipe through the vacuum pump may be provided to the suction holes 120h of the suction unit 120.

[0050] The vacuum unit 130 may penetrate the support unit 110 and be connected to the suction unit 120. For example, at least a portion of the vacuum unit 130 may vertically penetrate the upper surface 111 and the lower surface 113 of the support unit 110. The vacuum unit 130 may be connected to the suction holes 120h of the suction unit 120. The vacuum unit 130 may provide a vacuum to the suction holes 120h by forming a vacuum in a vacuum pipe connected and / or in communication with the suction holes 120h.

[0051] The vacuum unit 130 may include a first vacuum unit 131 for providing a vacuum to the first suction unit 121 and the second suction unit 123, and a second vacuum unit 133 for providing a vacuum to the third suction unit 125 and the fourth suction unit 127. However, the configuration of the vacuum unit 130 is not limited to the illustrated embodiment, and the first vacuum unit 131 and the second vacuum unit 133 may be integrally formed.

[0052] The heating unit 140 may be connected and fixed to the support 110. The heating unit 140 may include a main body 143 and a heating plate 141 provided on a lower portion of the main body 143. The heating unit 140 may be connected and / or coupled to the support 110 such that the heating plate 141 is disposed on a lower surface 113 of the support 110. For example, the heating unit 140 may be connected to the support 110 such that at least a portion of the main body 143 is coupled through the support 110 and the heating plate 141 is exposed to the outside on the lower surface 113 of the support 110.

[0053] The heating plate 141 of the heating unit 140 may be provided on the lower surface 113 of the support 110 so that at least a portion of the heating plate 141 is surrounded by the plurality of suction units 120. For example, when looking at the lower surface 113 of the support 110, the heating plate 141 may be located at the center of the lower surface 113 and surrounded by the plurality of suction units 120.

[0054] The heating unit 140 can apply heat to the semiconductor device in a non-contact manner. As shown in FIG. 3, the heating plate 141 can be positioned lower than the suction unit 120 by a specified height H based on the lower surface 113 of the support unit 110. For example, the heating plate 141 can be positioned at a first height from the lower surface 113 of the support unit 110, and the suction unit 120 can be positioned at a second height greater than the first height from the lower surface 113 of the support unit 110. Thus, when the semiconductor device C is vacuum-sucked to the suction unit 120, the heating plate 141 can be spaced apart from the semiconductor device by approximately the difference H between the second height and the first height. As a result, the heating plate 141 does not come into direct contact with the semiconductor device, thereby reducing or preventing damage to the semiconductor device.

[0055] The heating unit 140 may include an infrared heater. For example, the heating unit 140 using an infrared heater may include a plurality of infrared lamps, and may apply heat to the semiconductor element using infrared light output from the infrared lamps. For example, the heating unit may be provided as a far-infrared heater to emit far-infrared rays in a wavelength band of about 5 to 25 μm. However, the type of the heating unit 140 is not limited to an infrared heater, and may be provided using various heating means capable of applying heat without directly contacting the semiconductor element.

[0056] The camera unit 150 may photograph the semiconductor device. The camera unit 150 may photograph an image and / or a picture of the semiconductor device before and after the semiconductor device is transferred in order to inspect the appearance of the semiconductor device. According to various embodiments, the camera unit 150 may be connected to an analysis unit, and the analysis unit may analyze and determine whether the semiconductor device is defective or damaged based on the image and / or image information transmitted from the camera unit 150. The camera unit 150 may be provided in the transfer device 100 by being connected to the heating unit 140 or the support unit 110 via a connection unit 160. The camera unit 150 may include one or more lenses 151.

[0057] The connecting part 160 may connect the camera part 150 and the heating part 140. For example, the connecting part 160 may extend from the camera part 150 and be connected to the body 143 of the heating part 140. However, the connecting part of the connecting part 160 is not limited to the body 143 of the heating part 140. According to various embodiments, the connecting part 160 may extend from the camera part 150 and be connected to the support part 110. The connecting part 160 may have a space in which wiring or the like can be disposed.

[0058] Although not shown, the transfer device 100 may be connected to a driving unit and driven by the driving unit. The driving unit may drive the transfer device 100 so as to transfer the semiconductor devices between processes via the transfer device 100. For example, the driving unit may raise or lower the transfer device 100 vertically or move it horizontally to vacuum-suck and move the semiconductor devices via the transfer device 100. Also, according to various embodiments, the driving unit may be included as a component of the transfer device 100.

[0059] FIG. 5 is a diagram illustrating an operation of transferring a semiconductor device C using a transfer apparatus 100 according to an embodiment of the present invention.

[0060] Referring to FIG. 5, the transfer device 100 according to an embodiment of the present invention can transfer the semiconductor device C while maintaining the semiconductor device C at a desired temperature by continuously applying heat to the semiconductor device C during the transfer process.

[0061] The semiconductor device C transferred through the transfer device 100 according to an embodiment of the present invention may be a power semiconductor device or a power semiconductor chip to be provided to a power module. For example, the transfer device 100 may reduce and / or prevent warpage of the power semiconductor when transferring the power semiconductor, which has a relatively large area compared to a system semiconductor, and may maintain the power semiconductor at a predetermined temperature. However, the object to be transferred by the transfer device 100 is not limited to a power semiconductor, and various types of semiconductor devices and semiconductor chips may be transferred.

[0062] 5, the operation or method of transferring the semiconductor device C through the transfer device 100 may include an operation of aligning the semiconductor device C with the camera unit 150 and taking a primary image of the semiconductor device C with the camera unit 150, an operation of aligning the semiconductor device C with the suction unit 120 and lowering the transfer device 100 toward the semiconductor device C, an operation of vacuum-suctioning and transferring the semiconductor device C, an operation of placing the semiconductor device C at a transfer position, releasing the vacuum suction, and raising the transfer device 100, and an operation of aligning the semiconductor device C with the camera unit 150 and taking a secondary image of the semiconductor device C with the camera unit 150. FIG. 5 shows the above operations in a clockwise order.

[0063] In an operation of aligning the semiconductor device C and the camera unit 150 and taking a primary image of the semiconductor device C with the camera unit 150, a primary inspection of the appearance is performed by taking an image of the semiconductor device C before the semiconductor device C is transferred. The result of the primary image may be used later to compare with the result of the secondary image to determine whether the semiconductor device C has been damaged or burned during transfer.

[0064] In the operation of aligning the semiconductor element C with the suction unit 120 and lowering the transfer device 100 toward the semiconductor element C, at least one of the semiconductor element C and the transfer device 100 is moved horizontally to align the semiconductor element C with the suction unit 120. In the process of lowering the transfer device 100, the heating unit 140 is operated to preheat the heating plate 141 in response to the required temperature conditions. As a result, heat can be applied to the semiconductor element C while vacuum-sucking it, so that the heating and / or temperature maintenance of the semiconductor element C can be efficiently performed.

[0065] In the operation of vacuum-adsorbing and transferring the semiconductor element C, a vacuum is applied to the adsorption unit 120 via the vacuum unit 130 to vacuum-adsorb the semiconductor element C. At this time, the semiconductor element C is in close contact with the adsorption unit 120 and is spaced a predetermined distance (e.g., about 1 mm) from the heating plate 141, so that heat is indirectly applied to the semiconductor element C without direct contact with the heating plate 141. According to an embodiment of the present invention, as shown in Figures 2 and 4, the semiconductor element C is picked up by a plurality of adsorption units 120 (e.g., three or more adsorption units), so that warping of the semiconductor element C can be prevented or reduced.

[0066] In the operation of disposing the semiconductor element C at the transfer position, releasing the vacuum suction, and raising the transfer device 100, after the transfer device 100 is moved to dispose the semiconductor element C at a predetermined position, the vacuum provided by the vacuum unit 130 is stopped and the vacuum suction of the semiconductor element C is released. At the same time as releasing the vacuum suction, the operation of the heating unit 140 is stopped.

[0067] In the operation of aligning the semiconductor device C with the camera unit 150 and taking a second image of the semiconductor device C with the camera unit 150, at least one of the semiconductor device C and the transport device 100 is moved horizontally to align the semiconductor device C with the camera unit 150. After the transport of the semiconductor device C is completed, the semiconductor device C is photographed to perform a second inspection of its appearance, and the result is compared with the result of the first photograph to determine whether the semiconductor device C has been damaged or burned during transport.

[0068] Meanwhile, the above-mentioned content regarding the operation of transferring the semiconductor device C through the transfer device 100 is merely exemplary, and at least one operation may be omitted or added in various embodiments. For example, in the transfer operation of the semiconductor device C, the operation of taking a primary photograph of the semiconductor device C by the camera unit 150 before the transfer of the semiconductor device C may be omitted, and the semiconductor device C may be photographed after the transfer is completed and an appearance inspection of the semiconductor device C may be performed based on the photographed result. As another example, in the transfer operation of the semiconductor device C, only the operation of taking a primary photograph of the semiconductor device C by the camera unit 150 before the transfer of the semiconductor device C may be performed, and the operation of taking a second photograph of the semiconductor device C by the camera unit 150 after the transfer may be omitted.

[0069] FIG. 6 is a diagram showing an operation of transferring a semiconductor device C using a transfer device 100' according to an embodiment different from the transfer device 100 of FIG.

[0070] FIG. 6 shows an operation of transferring a semiconductor device C using a transfer device 100' in which the camera unit 150 is omitted, as compared with the transfer device 100 according to the embodiment shown in FIG.

[0071] 6, according to various embodiments of the present invention, a transfer device 100' may be provided in a structure that does not include a camera unit 150 and a connection unit 160. According to the embodiment shown in FIG 6, in the operation of transferring a semiconductor device C through the transfer device 100', the step of photographing the exterior of the semiconductor device C through the camera unit 150 is not performed.

[0072] 6, the operation or method of transferring the semiconductor device C through the transfer device 100' may include an operation of aligning the semiconductor device C with the suction part 120 and lowering the transfer device 100' toward the semiconductor device C, an operation of vacuum-suctioning and transferring the semiconductor device C, and an operation of disposing the semiconductor device C at a transfer position, releasing the vacuum suction, and lifting the transfer device 100'. FIG. 6 shows the above operations from left to right.

[0073] The transfer operation shown in Fig. 6 may be substantially the same as the transfer operation described with reference to Fig. 5, except that the camera unit 150 does not take an image of the external appearance of the semiconductor device C. Hereinafter, the overlapping description will be omitted and replaced with the previous description.

[0074] Although the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that the scope of the present invention is not limited thereto, and that various modifications and variations are possible without departing from the technical idea of ​​the present invention described in the claims.

[0075] In addition, in the embodiments of the present invention, some components may be omitted, and the configurations of the embodiments may be combined with each other. [Explanation of symbols]

[0076] 100, 100' Transfer device 110 Support part 111 Upper surface 113 Lower surface 120 Adsorption part 121 First adsorption part 123 2nd suction part 125 3rd suction part 127 4th suction part 120h Suction hole 130 Vacuum section 131 1st vacuum section 133 Second vacuum section 140 Heating section 141 heating plate 143 main body 150 Camera unit 151 Lens 160 Connection C Semiconductor element

Claims

1. A support portion; A plurality of suction portions provided on a lower surface of the support portion; a vacuum unit coupled to the support unit and providing a vacuum to the plurality of suction units; a heating unit coupled to the support unit and configured to heat the semiconductor element fixed to the plurality of suction units; the heating unit includes a heating plate disposed on the lower surface of the support unit, The heating plate is disposed on the lower surface of the support so as to be surrounded by the plurality of suction portions.

2. 2. The apparatus of claim 1, wherein the heating plate is positioned lower than the plurality of suction parts by a specified height based on the lower surface of the support part.

3. The heating plate is 2. The semiconductor device transfer apparatus of claim 1, wherein the semiconductor device is spaced a designated distance from the semiconductor device while the semiconductor device is attached to the plurality of suction portions.

4. The heating unit includes:

2. The transfer apparatus for a semiconductor device according to claim 1, wherein the heating plate is connected to the support through at least a portion of the support so as to be exposed to the outside on the lower surface of the support.

5. The heating unit further includes a body having the heating plate disposed thereunder, The transfer device for a semiconductor element according to claim 4 , wherein at least a portion of the body penetrates the support.

6. The semiconductor device transfer apparatus according to claim 1 , wherein the heating unit includes an infrared heater.

7. the heating plate is disposed at the center of the lower surface of the support; The semiconductor device transfer apparatus according to claim 1 , wherein the plurality of suction parts are three or more and surround the heating plate.

8. The semiconductor device transfer apparatus of claim 7 , wherein the plurality of suction portions include a first suction portion, a second suction portion, a third suction portion and a fourth suction portion that are spaced apart from one another and surround the heating plate.

9. The plurality of suction portions include The semiconductor device transfer apparatus of claim 8 , wherein the first suction portion, the second suction portion, the third suction portion, and the fourth suction portion are arranged symmetrically with respect to the heating plate.

10. 9. The semiconductor device transfer device of claim 8, wherein each of the first suction portion, the second suction portion, the third suction portion, and the fourth suction portion is disposed between an edge portion of the lower surface of the support portion and an edge portion of the heating plate.

11. The device of claim 1 , wherein the plurality of suction parts are made of a flexible material.

12. Each of the plurality of suction portions is provided with a suction hole, The vacuum section is The semiconductor device transfer device according to claim 1 , further comprising: a support portion connected to the suction hole of each of the plurality of suction portions, the support portion being configured to pass through the support portion and to apply a vacuum to the suction hole.

13. The apparatus of claim 1 , further comprising a camera unit connected to one of the support unit and the heating unit.

14. The apparatus of claim 13 , further comprising a connector that connects the camera unit to one of the support unit and the heating unit.

15. In the operation of vacuum-absorbing the semiconductor element, The semiconductor element transport device according to claim 1 , wherein the heating portion is activated while the semiconductor element transport device is moving toward the semiconductor element.

16. aligning a transfer device having a plurality of suction portions with the semiconductor device and lowering the transfer device toward the semiconductor device; an operation of vacuum-adsorbing the semiconductor element onto the plurality of adsorption portions and transferring the semiconductor element; and placing the semiconductor element at a transfer position, releasing the vacuum suction, and raising the transfer device. A method for transferring a semiconductor element, comprising: activating a heating section provided in the transfer device so as to correspond to a temperature condition required for the semiconductor element during the operation of lowering the transfer device toward the semiconductor element.

17. The transport device further includes a camera unit, The method of claim 16 , further comprising aligning the semiconductor device with the camera unit and photographing the semiconductor device with the camera unit.

18. The operation of photographing the semiconductor element includes: The method for transferring a semiconductor element according to claim 17 , wherein the method is performed at least one of before an operation of lowering the transfer device to vacuum-suck the semiconductor element and after an operation of releasing the vacuum suction of the semiconductor element and raising and lowering the transfer device to vacuum-suck the semiconductor element.

19. the transfer device further includes a support part on a lower surface of which the plurality of suction parts are disposed, The method of claim 17 , wherein the heating unit includes a heating plate disposed on the lower surface of the support unit so as to be surrounded by the plurality of suction units.

20. In the operation of vacuum-absorbing the semiconductor element and transferring the semiconductor element, The method of claim 19 , wherein the semiconductor device is in close contact with the plurality of suction parts and is spaced apart from the heating plate by a predetermined distance.

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