Semiconductor light-emitting device

Abstract

To achieve both a high output and a wide directional angle of a laser beam.SOLUTION: A semiconductor light-emitting device 10 includes: a surface light-emitting laser element 20 which includes an element surface 21, and is configured to emit a laser beam from the element surface 21; an element storage body 40 which includes a bottom wall 50 where the surface light-emitting laser element 20 is arranged and a peripheral wall 60 surrounding the surface light-emitting laser element 20 in plan view, where the bottom wall 50 and the peripheral wall 60 constitute a storage space 41 which stores the surface light-emitting laser element 20 and is opened on the same side as the element surface 21; a diffusion layer 80 which covers the element surface 21 in the storage space 41, and includes a diffusion material 82; and a reflection body 90 which covers at least one of the bottom wall 50 and the peripheral wall 60 in the storage space 41, and is constituted of a resin material having reflectance higher than that of the diffusion layer 80. The reflection body 90 is constituted so as to reflect light which is emitted from the element surface 21 and is diffused by the diffusion material 82.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to semiconductor light emitting devices. [Background technology]

[0002] 2. Description of the Related Art Conventionally, as light source devices mounted in various electronic devices, semiconductor light emitting devices including light emitting diodes (LEDs) as light sources have been known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-41866 A

[0004] [overview] However, since conventional semiconductor light-emitting devices use LED elements, it is difficult to support high output from light sources. Therefore, instead of LED elements, it is conceivable to support high output by using surface-emitting laser elements such as vertical cavity surface-emitting lasers (VCSELs). However, surface-emitting laser elements have a narrower beam angle than LED elements. Thus, there is room for improvement in semiconductor light-emitting devices in terms of achieving both high output and a wide beam angle of laser light.

[0005] A semiconductor light-emitting device according to one aspect of the present disclosure includes an element container including a surface-emitting laser element including an element surface and configured to emit laser light from the element surface, a bottom wall on which the surface-emitting laser element is disposed, and a peripheral wall surrounding the surface-emitting laser element when viewed from a direction perpendicular to the element surface, the bottom wall and the peripheral wall accommodating the surface-emitting laser element and constituting an accommodating space opening on the same side as the element surface, a diffusion layer covering the element surface within the accommodating space and including a diffusion material, and a reflector covering at least one of the bottom wall and the peripheral wall within the accommodating space and made of a resin material having a higher reflectivity than the diffusion layer, the reflector being configured to reflect light emitted from the element surface and diffused by the diffusion material. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic perspective view of a semiconductor light emitting device according to the first embodiment. [Diagram 2] FIG. 2 is a schematic plan view of the inside of the semiconductor light emitting device of FIG. [Diagram 3] FIG. 3 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F3-F3 in FIG. [Figure 4] FIG. 4 is a schematic plan view of the inside of the semiconductor light emitting device in which a reflector is added to the structure of FIG. [Diagram 5] FIG. 5 is a schematic plan view of the semiconductor light emitting device according to the second embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F6-F6 in FIG. [Figure 7] FIG. 7 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F7-F7 in FIG. [Figure 8] FIG. 8 is a schematic plan view of the semiconductor light emitting device according to the third embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F9-F9 in FIG. [Figure 10] FIG. 10 is a schematic cross-sectional view of a semiconductor light emitting device according to the fourth embodiment. [Figure 11]FIG. 11 is a schematic plan view of a semiconductor light emitting device according to a modified example. [Figure 12] FIG. 12 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Figure 13] FIG. 13 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Figure 14] FIG. 14 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Figure 15] FIG. 15 is a schematic plan view of a semiconductor light emitting device according to a modified example. [Figure 16] FIG. 16 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F16-F16 in FIG.

[0007] [Detailed Description] Hereinafter, some embodiments of the semiconductor light emitting device of the present disclosure will be described with reference to the accompanying drawings. Note that, for simplicity and clarity of description, the components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings are merely illustrative of embodiments of the present disclosure and should not be considered as limiting the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The term "at least one" as used herein means "one or more" of the desired options. As an example, the term "at least one" as used herein means "only one option" or "both of two options" if the number of options is two. As another example, the term "at least one" as used herein means "only one option" or "any combination of two or more options" if the number of options is three or more.

[0010] As used in this specification, "the length (thickness, dimension) of A is equal to the length (thickness, dimension) of B" or "the length (thickness, dimension) of A and the length (thickness, dimension) of B are equal to each other" also includes a relationship in which the difference between the length (thickness, dimension) of A and the length (thickness, dimension) of B is within 10% of the length (thickness, dimension) of A, for example.

[0011] First Embodiment A semiconductor light emitting device 10 of a first embodiment will be described with reference to FIGS. FIG. 1 is a schematic diagram showing a perspective structure of a semiconductor light-emitting device 10 according to a first embodiment. In FIG. 1, in order to facilitate understanding of the drawing, an element container 40, which will be described later, is shown by a two-dot chain line, and a diffusion layer 80 and a reflector 90, which will be described later, are omitted. FIG. 2 is a schematic diagram showing a planar structure of the semiconductor light-emitting device 10 shown in FIG. 1. In FIG. 2, in order to facilitate understanding of the drawing, the reflector 90 and the diffusion layer 80 are omitted. FIG. 3 is a schematic diagram showing a cross-sectional structure of the semiconductor light-emitting device 10 cut along the line F3-F3 in FIG. 2. FIG. 4 is a schematic diagram showing a planar structure in which a reflector 90 is added to FIG. 2. In FIG. 4, in order to facilitate understanding of the drawing, the diffusion layer 80 is omitted. Note that the term "planar view" used in the present disclosure refers to viewing the semiconductor light-emitting device 10 or components of the semiconductor light-emitting device 10 in the Z direction of the XYZ axes, which are orthogonal to each other in FIG. 1.

[0012] As shown in FIG. 1, a semiconductor light emitting device 10 includes a surface emitting laser element 20 serving as a light source, a light receiving element 30, and an element container 40 that houses the surface emitting laser element 20 and the light receiving element 30 therein.

[0013] The element housing 40 includes a bottom wall 50 on which the surface-emitting laser element 20 and the light-receiving element 30 are arranged, and a peripheral wall 60 that surrounds both the surface-emitting laser element 20 and the light-receiving element 30 in a plan view. In one example, the bottom wall 50 and the peripheral wall 60 are integrally formed as a single unit. The element housing 40 is made of an insulating material. In one example, the element housing 40 is made of a light-shielding resin material. In the first embodiment, the element housing 40 is made of a black epoxy resin.

[0014] As shown in Figs. 1 and 2, the bottom wall 50 is formed in a rectangular flat plate shape with the thickness direction being the Z direction. In one example, the bottom wall 50 is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction in a plan view. The bottom wall 50 includes a bottom wall front surface 51 and a bottom wall back surface 52 facing opposite sides to each other in the Z direction, and four bottom wall side surfaces 53 to 56 connecting the bottom wall front surface 51 and the bottom wall back surface 52. The bottom wall side surfaces 53 and 54 constitute both end surfaces of the bottom wall 50 in the X direction. The bottom wall side surfaces 55 and 56 constitute both end surfaces of the bottom wall 50 in the Y direction.

[0015] As shown in FIG. 3, the bottom wall 50 is provided with a plurality of terminals 70 penetrating the bottom wall 50 in the Z direction. Each terminal 70 includes a terminal front surface 71 facing the same side as the bottom wall front surface 51 (see FIG. 2) and a terminal back surface 72 facing the same side as the bottom wall back surface 52. The terminal front surface 71 is exposed from the bottom wall front surface 51. The terminal back surface 72 is exposed from the bottom wall back surface 52. Each terminal 70 is made of a material containing, for example, copper (Cu), aluminum (Al), etc. In the first embodiment, each terminal 70 is made of a material containing Cu. Each terminal 70 is formed by etching a metal plate containing Cu.

[0016] 2, the multiple terminals 70 include a first terminal 70A, a second terminal 70B, and a third terminal 70C. The first terminal 70A is a terminal on which both the surface-emitting laser element 20 and the light-receiving element 30 are mounted. The second terminal 70B is a terminal electrically connected to the surface-emitting laser element 20. The third terminal 70C is a terminal electrically connected to the light-receiving element 30.

[0017] The first terminal 70A is formed over most of the bottom wall 50 in the X direction. The first terminal 70A is disposed closer to the bottom wall side surface 56 in the Y direction. The second terminal 70B and the third terminal 70C are disposed closer to the bottom wall side surface 55 than the first terminal 70A in the Y direction. The second terminal 70B and the third terminal 70C are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction. The second terminal 70B and the third terminal 70C are disposed at a position overlapping with the first terminal 70A when viewed from the Y direction. The second terminal 70B is disposed closer to the bottom wall side surface 53 than the third terminal 70C.

[0018] The peripheral wall 60 is provided so as to rise in the Z direction from the outer periphery of the bottom wall 50. The peripheral wall 60 is formed in a rectangular frame shape in a plan view. The peripheral wall 60 can be divided into four side walls 61 to 64. The side walls 61 and 62 are provided at both ends of the bottom wall 50 in the X direction in a plan view. The side wall 61 is provided at an end closer to the bottom wall side surface 53 among both ends of the bottom wall 50 in the X direction in a plan view. The side wall 62 is provided at an end closer to the bottom wall side surface 54 among both ends of the bottom wall 50 in the X direction in a plan view. The side walls 63 and 64 are provided at both ends of the bottom wall 50 in the Y direction in a plan view. The side wall 63 is provided at an end closer to the bottom wall side surface 55 among both ends of the bottom wall 50 in the Y direction in a plan view. The side wall 64 is provided at an end closer to the bottom wall side surface 56 among both ends of the bottom wall 50 in the Y direction in a plan view.

[0019] The peripheral wall 60 includes a peripheral wall surface 65 facing the same side as the bottom wall surface 51, a peripheral wall inner side surface 66, and a peripheral wall outer side surface 67. In one example, the peripheral wall outer side surface 67 is formed so as to be flush with the bottom wall side surfaces 53 to 56 of the bottom wall 50. The peripheral wall inner side surface 66 is the side surface of the peripheral wall 60 opposite to the peripheral wall outer side surface 67.

[0020] In one example, as shown in FIG. 2 and FIG. 3, the peripheral wall inner surface 66 is configured by an inclined surface that inclines toward the outside of the element container 40 from the bottom wall surface 51 toward the peripheral wall surface 65. In one example, the peripheral wall inner surface 66 in the side wall 61 is configured by an inclined surface that inclines toward the bottom wall side surface 53 from the bottom wall surface 51 toward the peripheral wall surface 65. The peripheral wall inner surface 66 in the side wall 62 is configured by an inclined surface that inclines toward the bottom wall side surface 54 from the bottom wall surface 51 toward the peripheral wall surface 65. The peripheral wall inner surface 66 in the side wall 63 is configured by an inclined surface that inclines toward the bottom wall side surface 55 from the bottom wall surface 51 toward the peripheral wall surface 65. The peripheral wall inner surface 66 in the side wall 64 is configured by an inclined surface that inclines toward the bottom wall side surface 56 from the bottom wall surface 51 toward the peripheral wall surface 65. The peripheral wall inner surface 66 may be a plane extending in the Z direction.

[0021] In the example shown in Fig. 3, the peripheral wall outer surface 67 is formed by a plane extending in the Z direction. As shown in Fig. 2, in one example, the peripheral wall outer surface 67 of the side wall 61 is formed by an XZ plane and is flush with the bottom wall side surface 53. The peripheral wall outer surface 67 of the side wall 62 is formed by an XZ plane and is flush with the bottom wall side surface 54. The peripheral wall outer surface 67 of the side wall 63 is formed by a YZ plane and is flush with the bottom wall side surface 55. The peripheral wall outer surface 67 of the side wall 64 is formed by a YZ plane and is flush with the bottom wall side surface 56.

[0022] 3, the element housing 40 defines an accommodation space 41 by a bottom wall 50 and a peripheral wall 60. The accommodation space 41 is a space for housing the surface-emitting laser element 20 and the light-receiving element 30. The element housing 40 opens on the same side as the peripheral wall surface 65. In one example, the accommodation space 41 is formed so that the planar area perpendicular to the Z direction increases with increasing distance from the bottom wall surface 51 in the Z direction.

[0023] The surface-emitting laser element 20 accommodated in the accommodation space 41 of the element accommodation body 40 is formed in a rectangular flat plate shape with the Z direction being the thickness direction. Therefore, it can be said that the Z direction is the "thickness direction of the surface-emitting laser element 20". The surface-emitting laser element 20 can be a VCSEL element or a two-dimensional photonic crystal surface-emitting laser element. In one example, the surface-emitting laser element 20 is a VCSEL element.

[0024] The surface-emitting laser element 20 includes an element front surface 21 and an element back surface 22 facing opposite to each other in the Z direction, and four element side surfaces 23 connecting the element front surface 21 and the element back surface 22. The element front surface 21 faces the same side as the peripheral wall surface 65 of the peripheral wall 60 of the element housing body 40. Therefore, it can be said that the element housing body 40 is open on the same side as the element front surface 21. Here, the Z direction is the direction perpendicular to the element front surface 21. Therefore, a plan view means "viewed from a direction perpendicular to the element front surface 21."

[0025] The surface-emitting laser element 20 is configured to emit laser light from an element surface 21. The laser light is emitted from the element surface 21 in the Z direction. In one example, as shown in FIG. 2, the surface-emitting laser element 20 includes a plurality of light-emitting sections 24 formed on the element surface 21. Each of the plurality of light-emitting sections 24 is configured to emit laser light from the element surface 21 in the Z direction. It can be said that the surface-emitting laser element 20 includes a light-emitting region 25 in which the plurality of light-emitting sections 24 are formed. The light-emitting region 25 can be defined as a dashed-line region surrounding all the light-emitting sections 24 on the element surface 21. The shape of the light-emitting region 25 in plan view is changed according to the arrangement of the plurality of light-emitting sections 24. In the example shown in FIG. 2, the shape of the light-emitting region 25 in plan view is rectangular.

[0026] As shown in Fig. 3, the surface-emitting laser element 20 includes an element substrate 26. The element substrate 26 may include a semiconductor substrate containing, for example, gallium arsenide (GaAs) and a semiconductor layer on the semiconductor substrate. The semiconductor layer may include a plurality of semiconductor layers, such as an active layer and a DBR (Distributed Bragg Reflector) layer, and a conductive layer. is used. A plurality of light-emitting sections 24 are provided on the element substrate 26.

[0027] As shown in FIG. 2, a surface electrode 27 is formed on the element surface 21. The surface-emitting laser element 20 includes a conductive layer provided on an element substrate 26 and electrically connected to a plurality of light-emitting sections 24. The surface electrode 27 is electrically connected to the conductive layer. The surface electrode 27 is formed in a strip shape extending in the Y direction in a plan view. In one example, the surface electrode 27 is provided on one of both ends of the element surface 21 in the X direction, the end opposite the light-receiving element 30. In other words, the surface electrode 27 is provided on one of both ends of the element surface 21 in the X direction, the end closer to the side wall 61.

[0028] As shown in Fig. 2, the surface electrode 27 is electrically connected to the second terminal 70B by the first wire W1. In this manner, the surface electrode 27 is configured as a region for connecting the first wire W1. In the example shown in Fig. 2, the first wire W1 extends along the Y direction in a plan view. The first wire W1 is, for example, a bonding wire. The first wire W1 includes at least one of Au (gold), Al, and Cu.

[0029] 3, a rear surface electrode 28 is formed on the rear surface 22 of the element. In one example, the rear surface electrode 28 is formed over the entire surface of the rear surface 22 of the element. In one example, the rear surface electrode 28 constitutes a cathode electrode. In one example, the front surface electrode 27 constitutes an anode electrode.

[0030] The surface-emitting laser element 20 is mounted on the first terminal 70A. More specifically, the surface-emitting laser element 20 is bonded to a terminal surface 71 of the first terminal 70A by a conductive bonding material SD. As a result, the back electrode 28 of the surface-emitting laser element 20 is electrically connected to the first terminal 70A via the conductive bonding material SD.

[0031] The light receiving element 30 accommodated in the accommodation space 41 of the element accommodation body 40 is formed in a rectangular flat plate shape with the thickness direction being the Z direction. The light receiving element 30 is disposed apart from the surface emitting laser element 20 in the X direction. In the example shown in FIG. 2, the light receiving element 30 is disposed closer to the side wall 62 than the surface emitting laser element 20.

[0032] 2 and 3, the light receiving element 30 includes a light receiving front surface 31 and a light receiving back surface 32 facing opposite to each other in the Z direction, and a light receiving side surface 33 connecting the light receiving front surface 31 and the light receiving back surface 32. The light receiving element 30 is, for example, a photodiode.

[0033] The light-receiving surface 31 faces the same side as the element surface 21 of the surface-emitting laser element 20. A light-receiving region 34 and a surface electrode 35 are formed on the light-receiving surface 31. The surface electrode 35 is provided at a position overlapping with the light-receiving region 34 in a plan view, for example.

[0034] As shown in FIG. 2, the surface electrode 35 is electrically connected to the third terminal 70C by a second wire W2. In the example shown in FIG. 2, the second wire W2 extends along the Y direction in a plan view. The second wire W2 is, for example, a bonding wire. The second wire W2 includes at least one of Au, Al, and Cu. The second wire W2 may be made of, for example, the same material as the first wire W1.

[0035] 3, the light-receiving back surface 32 faces the same side as the element back surface 22 of the surface-emitting laser element 20. A back surface electrode 36 is formed on the light-receiving back surface 32. In one example, the back surface electrode 36 is formed over the entire light-receiving back surface 32. In one example, the back surface electrode 36 constitutes a cathode electrode. In one example, the front surface electrode 35 constitutes an anode electrode.

[0036] The light receiving element 30 is mounted on the first terminal 70A. More specifically, the light receiving element 30 is joined to the terminal surface 71 of the first terminal 70A by the conductive bonding material SD. As a result, the back electrode 36 of the light receiving element 30 is electrically connected to the first terminal 70A via the conductive bonding material SD. Therefore, it can be said that the back electrode 36 of the light receiving element 30 is electrically connected to the back electrode 28 of the surface-emitting laser element 20. In addition, since the surface-emitting laser element 20 and the light receiving element 30 are mounted on the terminal surface 71 of the common first terminal 70A, it can be said that the surface-emitting laser element 20 and the light receiving element 30 are arranged on the same plane.

[0037] Here, in the example shown in FIG. 3, the thickness of the surface-emitting laser element 20 and the thickness of the light-receiving element 30 are equal to each other. Therefore, the element surface 21 of the surface-emitting laser element 20 and the light-receiving surface 31 of the light-receiving element 30 are at the same position in the Z direction. More specifically, the distance D1 between the terminal surface 71 of the first terminal 70A and the element surface 21 of the surface-emitting laser element 20 in the Z direction is equal to the distance D2 between the terminal surface 71 of the first terminal 70A and the light-receiving surface 31 of the light-receiving element 30 in the Z direction. The thickness of the surface-emitting laser element 20 can be defined by the distance between the element surface 21 and the element back surface 22 of the surface-emitting laser element 20 in the Z direction. The thickness of the light-receiving element 30 can be defined by the distance between the light-receiving surface 31 and the light-receiving back surface 32 of the light-receiving element 30 in the Z direction.

[0038] As shown in FIG. 3, the semiconductor light emitting device 10 includes a diffusing layer 80 and a reflector 90 . The reflector 90 covers at least one of the bottom wall 50 and the peripheral wall 60 in the accommodation space 41 of the element accommodation body 40. In the example shown in Fig. 3, the reflector 90 covers both the bottom wall 50 and the peripheral wall 60. The reflector 90 is made of a resin material having a higher light reflectance than the diffusion layer 80. In one example, the reflector 90 is made of a white resin material. As the white resin material, for example, an epoxy resin mixed with titanium oxide or silica may be used.

[0039] As shown in Fig. 4, in a plan view, the reflector 90 covers the entire bottom wall 50. Therefore, the terminal surfaces 71 of the first to third terminals 70A to 70C are covered by the reflector 90. The reflector 90 is in contact with both the conductive bonding material SD between the surface-emitting laser element 20 and the first terminal 70A and the conductive bonding material SD between the light-receiving element 30 and the first terminal 70A. In Fig. 4, the reflector 90 is indicated by dots.

[0040] 3 and 4, the reflector 90 covers the four element side surfaces 23 of the surface-emitting laser element 20. The reflector 90 also covers the four light-receiving side surfaces 33 of the light-receiving element 30. For this reason, as shown in Fig. 4, the reflector 90 is in contact with a portion of the first wire W1 that is closer to the bottom wall surface 51 than the element surface 21 of the surface-emitting laser element 20. The reflector 90 is in contact with a portion of the second wire W2 that is closer to the bottom wall surface 51 than the light-receiving surface 31 of the light-receiving element 30.

[0041] 3 and 4, the reflector 90 covers the entire peripheral wall inner surface 66 of the peripheral wall 60. More specifically, the reflector 90 covers the entire peripheral wall inner surface 66 of each of the side walls 61 to 64. The reflector 90 is in contact with the entire peripheral wall inner surface 66 of each of the side walls 61 to 64.

[0042] The reflector 90 includes a surface 91. As shown in FIG. 3, the surface 91 includes a curved concave shape formed toward the peripheral wall surface 65 as it moves from the surface-emitting laser element 20 toward the side wall 61 of the peripheral wall 60. Although not shown in FIG. 3, the surface 91 includes a curved concave shape formed toward the peripheral wall surface 65 as it moves from the surface-emitting laser element 20 toward the side wall 63 (see FIG. 4) of the peripheral wall 60. The surface 91 includes a curved concave shape formed toward the peripheral wall surface 65 as it moves from the surface-emitting laser element 20 toward the side wall 64 (see FIG. 4) of the peripheral wall 60. The surface 91 of the portion of the reflector 90 filled between the surface-emitting laser element 20 and the light-receiving element 30 in the X direction includes a curved concave shape recessed toward the terminal surface 71 of the first terminal 70A as it moves toward the center in the X direction between the surface-emitting laser element 20 and the light-receiving element 30.

[0043] The surface 91 includes a curved concave shape formed toward the peripheral wall surface 65 as it moves from the light receiving element 30 toward the side wall 62 of the peripheral wall 60. Although not shown in FIG. 3, the surface 91 includes a curved concave shape formed toward the peripheral wall surface 65 as it moves from the light receiving element 30 toward the side wall 63 of the peripheral wall 60. The surface 91 includes a curved concave shape formed toward the peripheral wall surface 65 as it moves from the light receiving element 30 toward the side wall 64 of the peripheral wall 60. The surface 91 of the reflector 90 is inclined so as to approach the peripheral wall inner surface 66 as it approaches the peripheral wall surface 65. In one example, the outer peripheral edge of the surface 91 is connected to the inner peripheral edge of the peripheral wall surface 65.

[0044] The diffusion layer 80 covers both the element surface 21 of the surface-emitting laser element 20 and the light-receiving surface 31 of the light-receiving element 30 in the accommodation space 41 of the element accommodation body 40. In one example, the diffusion layer 80 is in contact with both the element surface 21 and the light-receiving surface 31. It can be said that the diffusion layer 80 covers both the element surface 21 and the light-receiving surface 31. The diffusion layer 80 is provided on a reflector 90. In one example, the diffusion layer 80 is in contact with a surface 91 of the reflector 90.

[0045] The diffusion layer 80 includes a light-transmitting resin layer 81 and a plurality of diffusion materials 82 provided in the resin layer 81. The resin layer 81 is made of, for example, a transparent resin material. The resin layer 81 is in contact with the entire surface 91 of the reflector 90. Therefore, the area of ​​the diffusion layer 80 in a planar direction perpendicular to the Z direction gradually increases from the element surface 21 of the surface-emitting laser element 20 toward the peripheral wall surface 65 in the Z direction. The resin layer 81 includes a surface 83. In one example, the surface 83 is formed so as to be in the same position as the peripheral wall surface 65 of the peripheral wall 60 in the Z direction.

[0046] The multiple diffusion materials 82 are dispersed in the resin layer 81 as fine particles that diffuse light. The diffusion materials 82 diffuse light inside the resin layer 81 by reflecting (scattering) light at the interface between the resin in the resin layer 81 and the diffusion materials 82. As a result, the light receiving element 30 receives a part of the laser light emitted from the element surface 21 of the surface emitting laser element 20 that has been diffused by the diffusion materials 82 in the diffusion layer 80. In addition, the diffusion material 82 plays a role in widening the directivity angle of the laser light emitted from the diffusion layer 80 by diffusing the laser light emitted from the element surface 21 of the surface emitting laser element 20 in the diffusion layer 80.

[0047] The material of the diffusing material 82 is not particularly limited, but for example, silica or other glass materials can be used. In one example, a spherical silica filler is used as the diffusing material 82. The particle size of the diffusing material 82 is not particularly limited, but for example, a particle size that is sufficiently small with respect to the wavelength of the laser light emitted from the surface-emitting laser element 20 is selected so that scattering occurs predominantly.

[0048] The diffusing material 82 is mixed with the resin layer 81 at a predetermined compounding ratio. In one example, the diffusing material 82 is evenly dispersed in the resin layer 81. The compounding ratio of the diffusing material 82 with respect to the resin layer 81 is not particularly limited, and may be greater than 0% and less than 100%. The larger the compounding ratio of the diffusing material 82 is, the easier it is for the light receiving element 30 to receive scattered light, and the beam angle of the laser light of the surface-emitting laser element 20 can be widened. Furthermore, by limiting the upper limit of the compounding ratio of the diffusing material 82 to a predetermined value, a large decrease in the output and radiation intensity of the laser light of the semiconductor light emitting device 10 can be suppressed.

[0049] In one example, a material having a smaller linear expansion coefficient than that of the resin layer 81 is selected as the diffusion material 82. In this configuration, the thermal stress generated in the diffusion layer 80 by the diffusion material 82 can be reduced compared to a case in which the diffusion layer 80 is composed of only the resin layer 81. This makes it possible to prevent the first wire W1 and the second wire W2 from being broken due to the thermal stress of the diffusion layer 80.

[0050] The light receiving element 30 receives a part of the laser light emitted from the surface-emitting laser element 20. Therefore, the semiconductor light emitting device 10 can monitor the state of the surface-emitting laser element 20 by the light receiving element 30. The semiconductor light emitting device 10 can use so-called APC (Auto Power Control) driving, which controls the current supplied to the surface-emitting laser element 20 so that the optical output of the laser light of the surface-emitting laser element 20 is constant. More specifically, a control device provided outside the semiconductor light emitting device 10 and controlling the current supplied to the surface-emitting laser element 20 receives a signal corresponding to the reflected light of the laser light of the surface-emitting laser element 20 received by the light receiving element 30 by the diffusion layer 80. The control device receives the signal of the light receiving element 30 by being electrically connected to the third terminal 70C. The control device controls the current supplied to the surface-emitting laser element 20 according to the difference between the received signal and the output setting value that becomes the preset optical output. In one example, the control device controls the current supplied to the surface-emitting laser element 20 so that the level of the received signal matches the output setting value.

[0051] [Operation of the first embodiment] The operation of the semiconductor light emitting device 10 of the first embodiment will be described. In the semiconductor light emitting device 10, the laser light emitted from the surface emitting laser element 20 is diffused in the diffusion layer 80. This allows the laser light emitted from the semiconductor light emitting device 10 to have a wide beam angle. In this way, the semiconductor light emitting device 10 can achieve both high output and a wide beam angle of the emitted light.

[0052] The diffused laser light travels toward, for example, the bottom wall 50 and the peripheral wall 60 of the element housing 40. The laser light is absorbed in the bottom wall 50 and the peripheral wall 60. Meanwhile, the reflector 90 reflects the laser light traveling toward the bottom wall 50 and the peripheral wall 60. The reflected laser light passes through the opening of the element housing 40 and is emitted to the outside of the semiconductor light-emitting device 10. In this manner, the laser light of the surface-emitting laser element 20 is diffused by the diffusion layer 80. The further diffused laser light is reflected by the reflector 90 and emitted to the outside without being absorbed by the bottom wall 50 and the peripheral wall 60 of the element housing 40. As a result, the semiconductor light-emitting device 10 can suppress the absorption of the laser light in the bottom wall 50 and the peripheral wall 60, thereby improving the light output.

[0053] [Effects of the first embodiment] According to the semiconductor light emitting device 10 of the first embodiment, the following effects can be obtained. (1-1) The semiconductor light-emitting device 10 includes a surface-emitting laser element 20 including an element surface 21 and configured to emit laser light from the element surface 21, a bottom wall 50 on which the surface-emitting laser element 20 is arranged, and a peripheral wall 60 surrounding the surface-emitting laser element 20 in a plan view, the bottom wall 50 and the peripheral wall 60 forming a housing space 41 that houses the surface-emitting laser element 20 and opens on the same side as the element surface 21, a diffusion layer 80 that covers the element surface 21 in the housing space 41 and includes a diffusion material 82, and a reflector 90 that covers at least one of the bottom wall 50 and the peripheral wall 60 in the housing space 41 and is made of a resin material having a higher light reflectance than the diffusion layer 80. The reflector 90 is configured to reflect the laser light emitted from the element surface 21 and diffused by the diffusion material 82.

[0054] According to this configuration, the laser light emitted from the surface-emitting laser element 20 is diffused by the diffusion layer 80, so that it is possible to achieve both high output and a wide beam angle of the laser light. In addition, the diffused laser light is reflected by the reflector 90 covering at least one of the bottom wall 50 and the peripheral wall 60, so that the optical output of the semiconductor light-emitting device 10 can be improved.

[0055] (1-2) The reflector 90 covers both the bottom wall 50 and the peripheral wall 60 of the element container 40 . According to this configuration, the reflector 90 covering both the bottom wall 50 and the peripheral wall 60 can prevent the laser light diffused by the diffusion layer 80 from being absorbed by both the bottom wall 50 and the peripheral wall 60. Therefore, the light output of the semiconductor light emitting device 10 can be further improved.

[0056] (1-3) The peripheral wall 60 includes a peripheral wall surface 65 that faces the same side as the element surface 21 of the surface-emitting laser element 20 and is provided at a position farther from the bottom wall 50 than the element surface 21. The reflector 90 covers the peripheral wall 60. A surface 91 of the reflector 90 includes a curved concave shape that is formed toward the peripheral wall surface 65 as it moves from the surface-emitting laser element 20 toward the peripheral wall 60.

[0057] According to this configuration, compared to when the surface 91 of the reflector 90 is a flat surface, the reflection direction of the diffused laser light reflected by the curved concave surface 91 of the reflector 90 can be dispersed. Therefore, the beam angle of the semiconductor light emitting device 10 can be further widened.

[0058] (1-4) The surface-emitting laser element 20 includes a rear surface 22 facing the opposite side to the front surface 21, and a side surface 23 connecting the front surface 21 and the rear surface 22. The reflector 90 covers the side surface 23.

[0059] According to this configuration, the laser light diffused by the diffusion layer 80 may be directed toward the element side surface 23 of the surface-emitting laser element 20. Since this element side surface 23 is covered with the reflector 90, the laser light directed toward the element side surface 23 is reflected by the reflector 90. This prevents the laser light from being absorbed by the element side surface 23, thereby improving the optical output of the semiconductor light-emitting device 10.

[0060] (1-5) The surface-emitting laser element 20 includes a light-emitting region 25 formed on an element surface 21. The diffusion layer 80 covers the entire light-emitting region 25 in a plan view. According to this configuration, all of the laser light emitted from the surface-emitting laser element 20 is incident on the diffusion layer 80. Therefore, all of the laser light emitted from the surface-emitting laser element 20 is diffused by the diffusion layer 80. Therefore, the semiconductor light-emitting device 10 can emit laser light with a wide directivity angle.

[0061] (1-6) The reflector 90 is made of a white resin material. According to this configuration, the diffused laser light can be easily reflected by the reflector 90. Therefore, the optical output of the semiconductor light emitting device 10 can be improved.

[0062] (1-7) The semiconductor light emitting device 10 includes a light receiving element 30 disposed on a bottom wall 50 within the accommodation space 41. The light receiving element 30 is configured to receive laser light emitted from the element surface 21 of the surface emitting laser element 20 and diffused by a diffusion material 82.

[0063] According to this configuration, the light receiving element 30 receives the diffused laser light, and thereby it is possible to grasp the optical output of the laser light emitted by the surface emitting laser element 20. Therefore, it becomes easier to control the optical output of the surface emitting laser element 20.

[0064] (1-8) The light-receiving element 30 includes a light-receiving surface 31 that faces the same side as the element front surface 21 of the surface-emitting laser element 20 and includes a light-receiving region 34 that receives laser light, a light-receiving back surface 32 that faces the opposite side to the light-receiving surface 31, and a light-receiving side surface 33 that connects the light-receiving surface 31 and the light-receiving back surface 32. The reflector 90 covers the light-receiving side surface 33.

[0065] According to this configuration, the laser light diffused by the diffusion layer 80 may head toward the light-receiving side surface 33 of the light-receiving element 30. Because the light-receiving side surface 33 is covered with the reflector 90, the laser light headed toward the light-receiving side surface 33 is reflected by the reflector 90. This prevents the laser light from being absorbed by the light-receiving side surface 33, thereby improving the light output of the semiconductor light-emitting device 10.

[0066] (1-9) The element surface 21 of the surface-emitting laser element 20 and the light-receiving surface 31 of the light-receiving element 30 are at the same position in the Z direction. This configuration can prevent the reflector 90 from covering either the element surface 21 of the surface-emitting laser element 20 or the light-receiving surface 31 of the light-receiving element 30. Therefore, it is possible to improve the optical output of the laser light caused by the element surface 21 of the surface-emitting laser element 20 being covered by the reflector 90, or to prevent a decrease in detection accuracy caused by the light-receiving surface 31 of the light-receiving element 30 being covered by the reflector 90.

[0067] (1-10) The reflector 90 is provided between the surface-emitting laser element 20 and the light-receiving element 30. The surface 91 of the reflector 90 provided between the surface-emitting laser element 20 and the light-receiving element 30 includes a curved concave shape.

[0068] According to this configuration, compared to when the surface 91 of the reflector 90 is a flat surface, the reflection direction of the diffused laser light reflected by the curved concave surface 91 of the reflector 90 can be dispersed. Therefore, the beam angle of the semiconductor light emitting device 10 can be further widened.

[0069] (1-11) A light emitting region 25 and a surface electrode 27 are formed spaced apart from each other in the X direction on the element surface 21 of the surface emitting laser element 20. The light receiving element 30 is disposed on the opposite side of the light emitting region 25 to the surface electrode 27 in the X direction.

[0070] According to this configuration, it is possible to shorten the distance in the X direction between the light emitting region 25 of the surface emitting laser element 20 and the light receiving element 30. Therefore, the light receiving element 30 can easily receive the laser light emitted from the element surface 21 of the surface emitting laser element 20.

[0071] <Second embodiment> A semiconductor light emitting device 10 of the second embodiment will be described with reference to Figs. 5 to 7. The semiconductor light emitting device 10 of the second embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the configuration of the peripheral wall 60 of the element container 40. The following describes the points that differ from the first embodiment. Meanwhile, components that are common to the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

[0072] Fig. 5 is a schematic diagram showing a planar structure of a semiconductor light emitting device 10 according to a second embodiment. In Fig. 5, both the diffusion layer 80 and the reflector 90 are omitted in order to facilitate understanding of the drawing. Fig. 6 is a schematic diagram showing a cross-sectional structure of the semiconductor light emitting device 10 taken along line F6-F6 in Fig. 5. Fig. 7 is a schematic diagram showing a cross-sectional structure of the semiconductor light emitting device 10 taken along line F7-F7 in Fig. 5.

[0073] As shown in Fig. 5, the peripheral wall 60 includes a thin wall portion 68 having a small thickness. A plurality of thin wall portions 68 are provided at intervals in the direction in which the peripheral wall 60 extends in a plan view. In the example shown in Fig. 5, the thin wall portions 68 are provided on a side wall 61 of the peripheral wall 60 close to the surface-emitting laser element 20 in the X direction, a side wall 62 close to the light-receiving element 30 in the X direction, and a side wall 64 close to both the surface-emitting laser element 20 and the light-receiving element 30 in the Y direction.

[0074] The thin wall portion 68 includes a peripheral wall inner side surface 66C. In a plan view, the peripheral wall inner side surface 66C is located outward of the bottom wall surface 51 with respect to the peripheral wall inner side surface 66 of the peripheral wall 60 other than the thin wall portion 68. In other words, the thin wall portion 68 is thinner than the thickness of the peripheral wall 60 other than the thin wall portion 68 because the peripheral wall inner side surface 66C is located outward of the bottom wall surface 51.

[0075] The thin wall portion 68 of the side wall 61 is disposed at a position overlapping with the surface-emitting laser element 20 when viewed from the X direction. In one example, in a plan view, the dimension of the thin wall portion 68 in the Y direction is equal to or greater than the dimension of the surface-emitting laser element 20 in the Y direction. In the example shown in Fig. 5, in a plan view, the dimension of the thin wall portion 68 in the Y direction is equal to the dimension of the surface-emitting laser element 20 in the Y direction.

[0076] The thin wall portion 68 of the side wall 62 is disposed at a position overlapping with the light receiving element 30 when viewed from the X direction. In one example, in a plan view, the dimension in the Y direction of the thin wall portion 68 is equal to or greater than the dimension in the Y direction of the light receiving element 30. In the example shown in Fig. 5, in a plan view, the dimension in the Y direction of the thin wall portion 68 is greater than the dimension in the Y direction of the light receiving element 30.

[0077] As shown in FIGS. 5 and 6, the distance in the X direction between the surface-emitting laser element 20 and the sidewall 61 at the thin wall portion 68 of the sidewall 61 is larger than the distance in the X direction between the surface-emitting laser element 20 and the sidewall 61 at a portion of the sidewall 61 other than the thin wall portion 68.

[0078] The distance in the X direction between the light receiving element 30 and the sidewall 62 at the thin wall portion 68 of the sidewall 62 is greater than the distance in the X direction between the light receiving element 30 and the sidewall 62 at the portion other than the thin wall portion 68 of the sidewall 62 .

[0079] 6, the peripheral wall inner surface 66C of the thin wall portion 68 in the side wall 61 is configured as an inclined surface that slopes from the bottom wall surface 51 of the bottom wall 50 toward the peripheral wall surface 65 of the peripheral wall 60 toward the bottom wall side surface 53. The peripheral wall inner surface 66C of the thin wall portion 68 in the side wall 62 is configured as an inclined surface that slopes from the bottom wall surface 51 of the bottom wall 50 toward the peripheral wall surface 65 of the peripheral wall 60 toward the bottom wall side surface 54.

[0080] 7, the portion of the peripheral wall 60 of the second embodiment other than the thin wall portion 68 includes a first peripheral wall portion 60A closer to the bottom wall 50 in the Z direction, and a second peripheral wall portion 60B on the opposite side of the bottom wall 50 with respect to the first peripheral wall portion 60A. The first peripheral wall portion 60A and the second peripheral wall portion 60B are an integrally formed one piece.

[0081] The thickness T1 of the first peripheral wall portion 60A is thicker than the thickness T2 of the second peripheral wall portion 60B. In other words, the thickness T2 of the second peripheral wall portion 60B is thinner than the thickness T1 of the first peripheral wall portion 60A. Here, the thickness T1 of the first peripheral wall portion 60A is a dimension in a direction perpendicular to both the extension direction of the first peripheral wall portion 60A and the Z direction in a plan view. The thickness T2 of the second peripheral wall portion 60B is a dimension in a direction perpendicular to both the extension direction of the second peripheral wall portion 60B and the Z direction in a plan view.

[0082] The thickness T1 of the first circumferential wall portion 60A becomes thinner as it moves away from the bottom wall 50 in the Z direction. The thickness T2 of the second circumferential wall portion 60B becomes thinner as it moves away from the bottom wall 50 in the Z direction. In one example, the minimum value of the thickness T1 of the first circumferential wall portion 60A is greater than the maximum value of the thickness T2 of the second circumferential wall portion 60B. Therefore, a step 69 is formed by the first circumferential wall portion 60A and the second circumferential wall portion 60B.

[0083] The first circumferential wall portion 60A includes a circumferential wall inner side surface 66A. The second circumferential wall portion 60B includes a circumferential wall inner side surface 66B. In a plan view, the circumferential wall inner side surface 66B is located outward of the bottom wall surface 51 from the circumferential wall inner side surface 66A. In a plan view, the circumferential wall inner side surface 66B is spaced apart from the circumferential wall inner side surface 66A. Therefore, in a plan view, a step 69 is formed between the circumferential wall inner side surface 66A and the circumferential wall inner side surface 66B. Here, the circumferential wall inner side surface 66B is an example of an "inner surface constituting the second circumferential wall portion 60B."

[0084] In the Z direction, the step 69 of the side wall 61 is formed at the same position as the element surface 21 of the surface-emitting laser element 20. In other words, the height H1 of the first peripheral wall portion 60A is equal to the distance D1 in the Z direction between the terminal surface 71 of the first terminal 70A and the element surface 21 of the surface-emitting laser element 20. Here, the height H1 of the first peripheral wall portion 60A can be defined by the distance in the Z direction between the terminal surface 71 of the first terminal 70A and the first peripheral wall surface 65A of the first peripheral wall portion 60A. The first peripheral wall surface 65A is a surface that constitutes the step 69, and faces the same side as the peripheral wall surface 65.

[0085] In the Z direction, the step 69 of the side wall 62 is formed at the same position as the light receiving surface 31 of the light receiving element 30. In other words, the height H1 of the first peripheral wall portion 60A is equal to the distance D2 between the terminal surface 71 of the first terminal 70A and the light receiving surface 31 of the light receiving element 30 in the Z direction.

[0086] The reflector 90 covers the peripheral wall inner surface 66A of the first peripheral wall portion 60A. The reflector 90 covers the step 69. The reflector 90 covers the peripheral wall inner surface 66B of the second peripheral wall portion 60B. As shown in Fig. 6, the reflector 90 covers the entire peripheral wall inner surface 66C of the thin wall portion 68. The diffusion layer 80 is formed on the reflector 90 in the same manner as in the first embodiment.

[0087] [Effects of the second embodiment] According to the semiconductor light emitting device 10 of the second embodiment, the following effects can be obtained. (2-1) The surface-emitting laser element 20 is disposed close to a part of the peripheral wall 60 of the element container 40. The thickness of the peripheral wall 60 closer to the surface-emitting laser element 20 includes a portion thinner than the thickness of the peripheral wall 60 farther from the surface-emitting laser element 20.

[0088] According to this configuration, when the surface-emitting laser element 20 is disposed offset relative to the peripheral wall 60 in plan view, the thickness of the peripheral wall 60 closer to the surface-emitting laser element 20 can be made thinner to increase the distance between the surface-emitting laser element 20 and the peripheral wall 60. This makes it possible to prevent the reflector 90 provided between the surface-emitting laser element 20 and the peripheral wall 60 from climbing up onto the element surface 21 of the surface-emitting laser element 20 so as to cover it.

[0089] (2-2) The peripheral wall 60 includes a first peripheral wall portion 60A closer to the bottom wall 50 in the Z direction, a second peripheral wall portion 60B located on the opposite side of the bottom wall 50 from the first peripheral wall portion 60A in the Z direction and having a thickness thinner than the first peripheral wall portion 60A, and a step 69 formed by the first peripheral wall portion 60A and the second peripheral wall portion 60B. In the Z direction, the step 69 is located at the same position as the element surface 21 or closer to the bottom wall 50 than the element surface 21.

[0090] According to this configuration, when the step 69 and the element surface 21 of the surface-emitting laser element 20 are at the same position in the Z direction, the reflector 90 is provided on the step 69, and therefore, covering of the element surface 21 can be prevented. In addition, when the step 69 is located closer to the bottom wall 50 than the element surface 21, the reflector 90 covers the step 69 before covering the element surface 21. Therefore, it is possible to prevent the reflector 90 from being formed so as to cover the element surface 21 of the surface-emitting laser element 20.

[0091] (2-3) The reflector 90 covers the step 69 . According to this configuration, the reflector 90 covers the step 69, thereby making it possible to prevent the diffused laser light from being absorbed by the step 69. Therefore, the optical output of the semiconductor light emitting device 10 can be improved.

[0092] (2-4) The reflector 90 covers the inner peripheral surface 66B of the second peripheral wall portion 60B. According to this configuration, the reflector 90 covers the peripheral wall inner side surface 66B of the second peripheral wall portion 60B, thereby preventing the diffused laser light from being absorbed by the peripheral wall inner side surface 66B, thereby improving the light output of the semiconductor light emitting device 10.

[0093] (2-5) The light receiving element 30 is disposed close to a part of the peripheral wall 60. The thickness of the peripheral wall 60 closer to the light receiving element 30 includes a portion thinner than the thickness of the peripheral wall 60 farther from the light receiving element 30.

[0094] According to this configuration, when the light receiving element 30 is disposed offset relative to the peripheral wall 60 in a plan view, the thickness of the peripheral wall 60 closer to the light receiving element 30 can be made thinner to increase the distance between the light receiving element 30 and the peripheral wall 60. This makes it possible to prevent the reflector 90 provided between the light receiving element 30 and the peripheral wall 60 from climbing up onto the light receiving surface 31 of the light receiving element 30 so as to cover it.

[0095] (2-6) The peripheral wall 60 closer to the surface-emitting laser element 20 includes a thin wall portion 68. The thin wall portion 68 is provided at a position facing the surface-emitting laser element 20 in a plan view. The thin wall portion 68 is formed over the entire element side surface 23 facing the surface-emitting laser element 20.

[0096] According to this configuration, it is possible to increase the distance between the surface-emitting laser element 20 and the thin wall portion 68 of the peripheral wall 60 close to the surface-emitting laser element 20. This makes it possible to prevent the reflector 90 provided between the surface-emitting laser element 20 and the peripheral wall 60 from climbing up onto the element surface 21 of the surface-emitting laser element 20 so as to cover it.

[0097] (2-7) The peripheral wall 60 closer to the light receiving element 30 includes a thin wall portion 68. The thin wall portion 68 is provided at a position facing the light receiving element 30 in a plan view. The thin wall portion 68 is formed over the entire light receiving side surface 33 facing the light receiving element 30.

[0098] According to this configuration, it is possible to increase the distance between the light receiving element 30 and the thin wall portion 68 of the peripheral wall 60 close to the light receiving element 30. This makes it possible to prevent the reflector 90 provided between the light receiving element 30 and the peripheral wall 60 from climbing up onto the light receiving surface 31 of the light receiving element 30 so as to cover it.

[0099] <Third embodiment> A semiconductor light emitting device 10 of the third embodiment will be described with reference to Figures 8 and 9. The semiconductor light emitting device 10 of the third embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the configuration of the element container 40. The following describes the differences from the first embodiment. Meanwhile, components common to the first embodiment are given the same reference numerals and descriptions thereof will be omitted.

[0100] Fig. 8 is a schematic diagram showing a planar structure of the semiconductor light-emitting device 10 of the second embodiment. In Fig. 8, in order to facilitate understanding of the drawing, both the diffusion layer 80 and the reflector 90 are omitted. Fig. 9 is a schematic diagram showing a cross-sectional structure of the semiconductor light-emitting device 10 taken along line F9-F9 in Fig. 8.

[0101] The element container 40 of the third embodiment is provided with a bottom wall 50 and a peripheral wall 60. The bottom wall 50 is made of, for example, black epoxy resin. The bottom wall 50 is formed in a rectangular flat plate shape with the thickness direction being the Z direction. As in the first embodiment, the bottom wall 50 includes a bottom wall front surface 51, a bottom wall rear surface 52, and bottom wall side surfaces 53 to 56. Also, as in the first embodiment, first to third terminals 70A to 70C are provided on the bottom wall 50.

[0102] The peripheral wall 60 is formed in a rectangular frame shape in a plan view. The peripheral wall 60 is joined to the outer periphery of the bottom wall surface 51 of the bottom wall 50 and the bottom wall side surfaces 53 to 56. In one example, the peripheral wall 60 is joined to the bottom wall 50 by an adhesive (not shown). The peripheral wall 60 is made of a reflective member having a higher light reflectance than the diffusion layer 80. In one example, the peripheral wall 60 is made of a resin material having a higher light reflectance than the diffusion layer 80. The peripheral wall 60 is made of a reflective member having a higher light reflectance than the bottom wall 50. In one example, the peripheral wall 60 is made of a resin material having a higher light reflectance than the bottom wall 50. In one example, the peripheral wall 60 is made of, for example, a white epoxy resin. For example, an epoxy resin mixed with titanium oxide or silica may be used as the white resin material.

[0103] The reflector 90 is provided so as to cover the entire bottom wall 50 in a plan view. Specifically, the reflector 90 is provided so as to cover a portion of the bottom wall surface 51 of the bottom wall 50 that is surrounded by the peripheral wall 60 and the terminal surfaces 71 of the first to third terminals 70A to 70C.

[0104] In the third embodiment, a surface 91 of the reflector 90 is formed to be closer to the bottom wall surface 51 in the Z direction than both the element surface 21 of the surface-emitting laser element 20 and the light-receiving surface 31 of the light-receiving element 30. In the example shown in Fig. 9, the reflector 90 partially covers both the element side surface 23 of the surface-emitting laser element 20 and the light-receiving side surface 33 of the light-receiving element 30 in the Z direction. The reflector 90 partially covers the peripheral wall inner side surface 66 of the peripheral wall 60 in the Z direction.

[0105] The diffusion layer 80 provided on the reflector 90 partially covers both the element side surface 23 of the surface-emitting laser element 20 and the light-receiving side surface 33 of the light-receiving element 30 in the Z direction. In addition, the diffusion layer 80 partially covers the peripheral-wall inner side surface 66 of the peripheral wall 60 in the Z direction.

[0106] [Effects of the third embodiment] According to the semiconductor light emitting device 10 of the third embodiment, the following effects can be obtained. (3-1) The bottom wall 50 and the peripheral wall 60 of the element container 40 are provided as separate bodies. The reflector 90 covers the bottom wall 50. The peripheral wall 60 is made of a reflective member having a higher light reflectance than the diffusion layer 80.

[0107] According to this configuration, when the laser light emitted from the element surface 21 of the surface-emitting laser element 20 is diffused by the diffusion layer 80, it travels toward the bottom wall 50 and the peripheral wall 60. Since the reflector 90 covers the bottom wall 50, the laser light that travels toward the bottom wall 50 after being diffused is reflected by the reflector 90. Furthermore, since the peripheral wall 60 is made of a reflective material, the laser light that travels toward the peripheral wall 60 after being diffused is reflected by the peripheral wall 60. In this way, the laser light that travels toward the bottom wall 50 and the peripheral wall 60 is reflected without being absorbed by the bottom wall 50 and the peripheral wall 60, so that the light output of the semiconductor light-emitting device 10 can be improved.

[0108] <Fourth embodiment> A semiconductor light emitting device 10 of the fourth embodiment will be described with reference to FIG. 10. The semiconductor light emitting device 10 of the fourth embodiment differs from the semiconductor light emitting device 10 of the third embodiment mainly in the connection structure between the bottom wall 50 and the peripheral wall 60. The following describes the differences from the first embodiment. Meanwhile, components common to the first embodiment are given the same reference numerals and their description will be omitted. FIG. 10 shows a schematic cross-sectional structure of the semiconductor light emitting device 10. The cross-sectional position in FIG. 10 is the same as that in FIG. 9.

[0109] 10, the semiconductor light emitting device 10 includes a substrate 100 and a case 120 provided on the substrate 100. The substrate 100 and the case 120 constitute an element container 40.

[0110] The substrate 100 is formed in a rectangular flat plate shape with the thickness direction being in the Z direction. The substrate 100 constitutes the bottom wall 50 of the element container 40. The substrate 100 is made of, for example, an insulating material. The substrate 100 is made of, for example, glass epoxy resin.

[0111] The substrate 100 includes a substrate front surface 101 and a substrate back surface 102 facing opposite to each other in the Z direction, and four substrate side surfaces 103 connecting the substrate front surface 101 and the substrate back surface 102. The substrate front surface 101 faces the same side as the element front surface 21 of the surface-emitting laser element 20, for example.

[0112] The semiconductor light emitting device 10 includes a plurality of surface electrodes 111 formed on a substrate surface 101, a plurality of back electrodes 112 formed on a substrate back surface 102, and a plurality of through electrodes 113 electrically connecting the plurality of surface electrodes 111 and the plurality of back electrodes 112 individually.

[0113] The multiple surface electrodes 111 include first to third surface electrodes. The first surface electrode is a surface electrode on which the surface-emitting laser element 20 and the light-receiving element 30 are mounted. The second surface electrode is a surface electrode electrically connected to the surface-emitting laser element 20. The third surface electrode is a surface electrode electrically connected to the light-receiving element 30. Here, the first surface electrode corresponds to a portion of the first terminal 70A (see FIG. 2) of the first embodiment that is exposed from the bottom wall surface 51. The second surface electrode corresponds to a portion of the second terminal 70B (see FIG. 2) of the first embodiment that is exposed from the bottom wall surface 51. The third surface electrode corresponds to a portion of the third terminal 70C (see FIG. 2) of the first embodiment that is exposed from the bottom wall surface 51. That is, the first surface electrode is electrically connected to the back electrode 28 of the surface-emitting laser element 20 and the back electrode 36 of the light-receiving element 30 by the conductive bonding material SD. The second surface electrode is electrically connected to the surface electrode 27 of the surface-emitting laser element 20 by the first wire W1. The third surface electrode is electrically connected to the surface electrode 35 of the light receiving element 30 by the second wire W2. In one example, the first surface electrode has the same arrangement position and shape as the terminal surface 71 of the first terminal 70A (see FIG. 2) in a plan view. The second surface electrode has the same arrangement position and shape as the terminal surface 71 of the second terminal 70B in a plan view. The third surface electrode has the same arrangement position and shape as the terminal surface 71 of the third terminal 70C in a plan view.

[0114] The multiple back surface electrodes 112 include first to third back surface electrodes. In one example, the first back surface electrode corresponds to a portion of the first terminal 70A of the first embodiment exposed from the bottom wall back surface 52. The second back surface electrode corresponds to a portion of the second terminal 70B of the first embodiment exposed from the bottom wall back surface 52. The third surface electrode corresponds to a portion of the third terminal 70C of the first embodiment exposed from the bottom wall back surface 52. In another example, the first back surface electrode has a position and shape similar to the terminal back surface 72 of the first terminal 70A in a plan view. The second back surface electrode has a position and shape similar to the terminal back surface 72 of the second terminal 70B in a plan view. The third surface electrode has a position and shape similar to the terminal back surface 72 of the third terminal 70C in a plan view.

[0115] Each of the multiple through electrodes 113 penetrates the substrate 100 in the Z direction. The multiple through electrodes 113 include first to third through electrodes. The first through electrode electrically connects the first front surface electrode and the first back surface electrode. The second through electrode electrically connects the second front surface electrode and the second back surface electrode. The third through electrode electrically connects the third front surface electrode and the third back surface electrode.

[0116] A reflector 90 is provided on the substrate surface 101 of the substrate 100. The reflector 90 is formed over the entire surface of the substrate surface 101. The reflector 90 covers a plurality of surface electrodes 111. In one example, the surface 91 of the reflector 90 is formed closer to the bottom wall surface 51 than both the element surface 21 of the surface-emitting laser element 20 and the light-receiving surface 31 of the light-receiving element 30 in the Z direction. In the example shown in FIG. 10, the reflector 90 partially covers both the element side surface 23 of the surface-emitting laser element 20 and the light-receiving side surface 33 of the light-receiving element 30 in the Z direction. The reflector 90 partially covers the peripheral wall inner side surface 66 of the peripheral wall 60 in the Z direction.

[0117] The case 120 is disposed on the reflector 90. In the fourth embodiment, the substrate 100 and the case 120 are bonded via the reflector 90. In this manner, the reflector 90 also functions as a bonding material for bonding the substrate 100 and the case 120 together.

[0118] The case 120 is formed in a rectangular frame shape in a plan view. The case 120 constitutes the peripheral wall 60 of the element container 40. The case 120 is made of, for example, a resin material having a higher reflectance than the substrate 100. In one example, the case 120 is made of a white resin material. The case 120 is disposed on the reflector 90.

[0119] The case 120 includes a case front surface 121 and a case back surface 122 that face opposite each other in the Z direction. The case front surface 121 faces the same side as the substrate front surface 101, and the case back surface 122 faces the same side as the substrate back surface 102. The case back surface 122 is in contact with the surface 91 of the reflector 90. In one example, the entire surface of the case back surface 122 is in contact with the surface 91 of the reflector 90.

[0120] The case 120 includes a case inner side surface 123 and a case outer side surface 124. The case inner side surface 123 is formed as an inclined surface that slopes from the case back surface 122 toward the case front surface 121 toward the case outer side surface 124. The case outer side surface 124 is formed as a flat surface along the Z direction.

[0121] The diffusion layer 80 is provided on the reflector 90. The diffusion layer 80 covers the entire surface of the case inner side surface 123 of the case 120. The diffusion layer 80 partially covers both the element side surface 23 of the surface-emitting laser element 20 and the light-receiving side surface 33 of the light-receiving element 30 in the Z direction. The diffusion layer 80 covers the entire surface of the case inner side surface 123 of the case 120.

[0122] [Effects of the fourth embodiment] According to the semiconductor light emitting device 10 of the fourth embodiment, the following effects can be obtained. (4-1) The reflector 90 covers the substrate 100 that constitutes the bottom wall 50. The case 120 that constitutes the peripheral wall 60 is provided on the reflector 90.

[0123] According to this configuration, the reflector 90 can join the substrate 100 and the case 120 that constitute the bottom wall 50. In addition, the reflector 90 can reflect the laser light emitted from the element surface 21 of the surface-emitting laser element 20 and then diffused by the diffusion layer 80 toward the substrate 100. Furthermore, the reflector 90 fills the gap between the substrate 100 and the case 120, and therefore can suppress light leakage from between the substrate 100 and the case 120.

[0124] <Example of change> The above-described embodiments can be modified as follows. The following modifications can be combined with each other as long as they are not technically inconsistent.

[0125] In the second embodiment, the number and arrangement positions of the thin wall portions 68 of the peripheral wall 60 can be changed arbitrarily. In one example, as shown in FIG. 11, one thin wall portion 68 may be provided on each of the side walls 61 to 64 of the peripheral wall 60. The thin wall portion 68 of the side wall 61 is arranged at a position overlapping with the surface-emitting laser element 20 when viewed from the X direction. In the example shown in FIG. 11, the dimension of the thin wall portion 68 in the Y direction is smaller than the dimension of the surface-emitting laser element 20 in the Y direction. The thin wall portion 68 of the side wall 62 is arranged at a position overlapping with the light-receiving element 30 when viewed from the X direction. In the example shown in FIG. 11, the dimension of the thin wall portion 68 in the Y direction is smaller than the dimension of the light-receiving element 30 in the Y direction. The thin wall portions 68 of the side walls 63 and 64 are arranged at positions overlapping with the surface-emitting laser element 20 when viewed from the Y direction. The dimension of these thin wall portions 68 in the X direction is smaller than the dimension of the surface-emitting laser element 20 in the X direction.

[0126] In the second embodiment, the size of the thin wall portion 68 of the peripheral wall 60 in a plan view can be changed arbitrarily. In one example, the size in the Y direction of the thin wall portion 68 of the side wall 61 of the peripheral wall 60 may be larger than the size in the Y direction of the surface-emitting laser element 20. In one example, the size in the Y direction of the thin wall portion 68 of the side wall 61 of the peripheral wall 60 may be smaller than the size in the Y direction of the surface-emitting laser element 20. In another example, the size in the X direction of the thin wall portion 68 of the side wall 64 of the peripheral wall 60 may be larger than the size in the X direction of the surface-emitting laser element 20. In one example, the size in the X direction of the thin wall portion 68 of the side wall 64 of the peripheral wall 60 may be smaller than the size in the X direction of the surface-emitting laser element 20. In another example, the size in the Y direction of the thin wall portion 68 of the side wall 62 of the peripheral wall 60 may be larger than the size in the Y direction of the light-receiving element 30. In one example, the size in the Y direction of the thin wall portion 68 of the side wall 62 of the peripheral wall 60 may be smaller than the size in the Y direction of the light receiving element 30. In another example, the size in the X direction of the thin wall portion 68 of the side wall 64 of the peripheral wall 60 may be larger than the size in the X direction of the light receiving element 30. In one example, the size in the X direction of the thin wall portion 68 of the side wall 64 of the peripheral wall 60 may be smaller than the size in the X direction of the light receiving element 30.

[0127] In the second embodiment, at least one of the multiple thin wall portions 68 in the peripheral wall 60 may be omitted. In one example, the thin wall portion 68 corresponding to the side wall 61 may be omitted. In one example, the thin wall portion 68 corresponding to the surface-emitting laser element 20 in the side wall 64 may be omitted. In one example, the two thin wall portions 68 facing the surface-emitting laser element 20 in a planar view may be omitted. In one example, the thin wall portion 68 corresponding to the side wall 62 may be omitted. In one example, the thin wall portion 68 corresponding to the light-receiving element 30 in the side wall 64 may be omitted. In one example, the two thin wall portions 68 facing the light-receiving element 30 in a planar view may be omitted.

[0128] In the second embodiment, the step 69 in the peripheral wall 60 may be omitted. In other words, the peripheral wall 60 may have the thin wall portion 68 in the configuration of the first embodiment. In the second embodiment, the formation range of the reflector 90 in the peripheral wall 60 can be changed arbitrarily. In one example, the reflector 90 may be configured to cover the peripheral wall inner surface 66A of the first peripheral wall portion 60A of the peripheral wall 60, but not cover the step 69. In this case, the step 69 and the peripheral wall inner surface 66B of the second peripheral wall portion 60B are covered by, for example, a diffusion layer 80. In another example, the reflector 90 may be configured to cover the peripheral wall inner surface 66A and the step 69 of the first peripheral wall portion 60A of the peripheral wall 60, but not cover the peripheral wall inner surface 66B of the second peripheral wall portion 60B. In this case, the peripheral wall inner surface 66B of the second peripheral wall portion 60B is covered by, for example, a diffusion layer 80.

[0129] In the first and second embodiments, the formation range of the reflector 90 can be changed arbitrarily. For example, the reflector 90 may be changed as in a first modified example shown in FIG. 12 and a second modified example shown in FIG.

[0130] As shown in FIG. 12, in the semiconductor light emitting device 10 of the first modified example, the reflector 90 may be provided so as to cover the bottom wall 50 but not to cover the peripheral wall 60. In the semiconductor light emitting device 10 of the first modified example, as shown in FIG. As shown in FIG. 13, in the semiconductor light emitting device 10 of the second modified example, the reflector 90 may be provided so as to cover the peripheral wall 60 but not to cover the bottom wall 50. In the semiconductor light emitting device 10 of the second modified example, as shown in FIG.

[0131] In each embodiment, the reflector 90 may be formed so as not to cover the element side surface 23 of the surface-emitting laser element 20. In one example, the reflector 90 may be formed so as to cover the conductive bonding material SD but not to cover the element side surface 23. In this case, the reflector 90 may cover the bottom wall surface 51 of the bottom wall 50 and the terminal surfaces 71 of the first to third terminals 70A to 70C.

[0132] In each embodiment, the reflector 90 may be formed so as not to cover the light-receiving side surface 33 of the light-receiving element 30. In one example, the reflector 90 may be formed so as to cover the conductive bonding material SD but not to cover the light-receiving side surface 33. In this case, the reflector 90 may cover the bottom wall surface 51 of the bottom wall 50 and the terminal surfaces 71 of the first to third terminals 70A to 70C.

[0133] In the third embodiment, the bottom wall 50 may be made of a resin material having a higher light reflectance than the diffusion layer 80 . In the third embodiment, the reflector 90 covering the bottom wall 50 may be omitted. In this case, the peripheral wall 60 constitutes the reflector.

[0134] In the fourth embodiment, the case 120 may be made of, for example, black epoxy resin. In the fourth embodiment, the first to third surface electrodes may be formed on the substrate front surface 101 of the substrate 100. In other words, the substrate rear surface 102 of the substrate 100 may not have an external electrode formed thereon. The first surface electrode is an electrode on which the surface-emitting laser element 20 and the light-receiving element 30 are mounted. The second surface electrode is an electrode electrically connected to the surface-emitting laser element 20. The third surface electrode is an electrode electrically connected to the light-receiving element 30. In other words, the first surface electrode corresponds to the first terminal 70A, the second surface electrode corresponds to the second terminal 70B, and the third surface electrode corresponds to the third terminal 70C.

[0135] In each embodiment, the element surface 21 of the surface-emitting laser element 20 and the light-receiving surface 31 of the light-receiving element 30 may be disposed at different positions in the Z direction. In one example, the light-receiving surface 31 of the light-receiving element 30 may be located closer to the bottom wall 50 than the element surface 21 of the surface-emitting laser element 20. In one example, the element surface 21 of the surface-emitting laser element 20 may be located closer to the bottom wall 50 than the light-receiving surface 31 of the light-receiving element 30.

[0136] In each embodiment, the configuration of the multiple terminals 70 can be changed as desired. In one example, the multiple terminals 70 may include first to fourth terminals. The first terminal is a terminal on which the surface-emitting laser element 20 is mounted. The first terminal is electrically connected to the back electrode 28 of the surface-emitting laser element 20. The second terminal is a terminal on which the light-receiving element 30 is mounted. The second terminal is electrically connected to the back electrode 36 of the light-receiving element 30. The third terminal is a terminal electrically connected to the front electrode 27 of the surface-emitting laser element 20 via the first wire W1. The fourth terminal is a terminal electrically connected to the front electrode 35 of the light-receiving element 30 via the second wire W2. In another example, the multiple terminals 70 may include a first terminal on which the surface-emitting laser element 20 is mounted, a second terminal on which the light-receiving element 30 is mounted, and a third terminal to which both the first wire W1 and the second wire W2 are connected.

[0137] In each embodiment, the reflector 90 may be made of a resin material of a color other than white, so long as the reflector 90 has a higher light reflectance than the diffusion layer 80 . In each embodiment, the diffusion layer 80 may partially cover the light emitting region 25 of the surface emitting laser element 20 .

[0138] In each embodiment, as shown in FIG. 14, a transparent resin layer 130 may be interposed between the reflector 90 and the diffusion layer 80. In the example shown in FIG. 14, the resin layer 130 is formed over the entire surface 91 of the reflector 90. For example, a transparent epoxy resin may be used as the resin layer 130. The formation area of ​​the resin layer 130 can be changed as desired. In one example, the resin layer 130 may be selectively formed on the surface 91 of the reflector 90.

[0139] In each embodiment, the formation range of the diffusion layer 80 can be changed arbitrarily. In one example, the diffusion layer 80 needs to cover at least the light emitting region 25 of the element surface 21 of the surface emitting laser element 20. For this reason, for example, the diffusion layer 80 may be configured to cover the element surface 21 of the surface emitting laser element 20 but not cover the light receiving surface 31 of the light receiving element 30. In this case, the light receiving surface 31 may be exposed, for example, or may be covered with a transparent resin layer.

[0140] In each embodiment, the shape of the surface 91 of the reflector 90 is not limited to a curved concave shape and can be changed arbitrarily. In one example, the surface 91 of the reflector 90 provided between the surface-emitting laser element 20 and the light-receiving element 30 may include a flat surface perpendicular to the Z direction. In another example, the surface 91 of the reflector 90 may include a flat inclined surface that approaches the peripheral wall surface 65 from the surface-emitting laser element 20 toward the peripheral wall 60. In another example, the surface 91 of the reflector 90 may include a flat inclined surface that approaches the peripheral wall surface 65 from the light-receiving element 30 toward the peripheral wall 60.

[0141] In each embodiment, the light receiving element 30 may be omitted from the semiconductor light emitting device 10. Figs. 15 and 16 show a configuration in which the light receiving element 30 is omitted from the semiconductor light emitting device 10 of the first embodiment. Fig. 15 shows a schematic planar structure of the semiconductor light emitting device 10 of a modified example. Note that in Fig. 15, the diffusion layer 80 and the reflector 90 are omitted to make the drawing easier to understand. Fig. 16 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 of the modified example taken along line F16-F16 in Fig. 15.

[0142] As shown in FIG. 15, the housing space 41 of the element housing 40 houses the surface-emitting laser element 20. The element housing 40 includes a first terminal 70A and a second terminal 70B as a plurality of terminals. The surface-emitting laser element 20 is mounted on the first terminal 70A. The mounting manner of the surface-emitting laser element 20 and the first terminal 70A is the same as that of the first embodiment. Therefore, the back electrode 28 of the surface-emitting laser element 20 is electrically connected to the first terminal 70A. The second terminal 70B is electrically connected to the surface-emitting laser element 20. The surface electrode 27 of the surface-emitting laser element 20 and the second terminal 70B are electrically connected by a wire WR. In the example shown in FIG. 15, the wire WR extends along the X direction in a plan view.

[0143] As shown in Fig. 16, the reflector 90 covers the bottom wall surface 51 of the bottom wall 50 and the peripheral wall inner side surface 66 of the peripheral wall 60 of the element container 40. The surface 91 of the reflector 90 includes a curved concave shape formed toward the peripheral wall surface 65 from the surface-emitting laser element 20 toward the peripheral wall 60. The diffusion layer 80 covers the element surface 21 of the surface-emitting laser element 20 and is provided on the reflector 90. Note that the semiconductor light-emitting device 10 of the modified example shown in Figs. 15 and 16 can be combined with the configurations of the second to fourth embodiments.

[0144] One or more of the various examples described in this specification may be combined to the extent that they are not technically inconsistent. The term "on" as used in this disclosure includes the meanings "on" and "above" unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" is intended to mean that in some embodiments, the first element may be disposed directly on the second element in contact with the second element, while in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0145] The Z direction used in this disclosure does not necessarily have to be a vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" of the Z direction described in this specification being "up" and "down" of the vertical direction. For example, the X direction may be a vertical direction, or the Y direction may be a vertical direction.

[0146] <Additional Notes> The technical ideas that can be understood from this disclosure are described below. Note that, for the purpose of aiding understanding, not for the purpose of limitation, the components described in the appendices are given the reference numbers of the corresponding components in the above embodiment. The reference numbers are shown as examples to aid understanding, and the components described in each appendix should not be limited to the components indicated by the reference numbers.

[0147] [Appendix 1] a surface-emitting laser element (20) including an element surface (21) and configured to emit laser light from the element surface (21); an element container (40) including a bottom wall (50) on which the surface-emitting laser element (20) is arranged, and a peripheral wall (60) surrounding the surface-emitting laser element (20) when viewed from a direction perpendicular to the element surface (21) (Z direction), the bottom wall (50) and the peripheral wall (60) forming a container space (41) that contains the surface-emitting laser element (20) and is open on the same side as the element surface (21); a diffusion layer (80) that covers the element surface (21) in the accommodation space (41) and includes a diffusion material (82); a reflector (90) that covers at least one of the bottom wall (50) and the peripheral wall (60) in the storage space (41) and is made of a resin material having a higher reflectance than the diffusion layer (80); Including, The reflector (90) is configured to reflect light emitted from the element surface (21) and diffused by the diffusing material (82). A semiconductor light emitting device (10).

[0148] [Appendix 2] The reflector (90) covers both the bottom wall (50) and the peripheral wall (60). 2. The semiconductor light emitting device of claim 1.

[0149] [Appendix 3] the peripheral wall (60) includes a peripheral wall surface (65) that faces the same side as the element surface (21) and is located farther from the bottom wall (50) than the element surface (21); The reflector (90) covers the peripheral wall (60), The surface (91) of the reflector (90) includes a curved concave shape formed toward the peripheral wall surface (65) as it moves from the surface-emitting laser element (20) toward the peripheral wall (60). 3. The semiconductor light emitting device according to claim 2.

[0150] [Appendix 4] The surface emitting laser element (20) is A back surface (22) of the element facing the opposite side to the front surface (21) of the element; an element side surface (23) connecting the element front surface (21) and the element back surface (22); Including, The reflector (90) covers the element side surface (23). 4. The semiconductor light emitting device according to claim 1.

[0151] [Appendix 5] The surface-emitting laser element (20) includes a light-emitting region (25) formed on a surface (21) of the element, The diffusion layer (80) covers the entire light-emitting region (25) when viewed in a direction perpendicular to the element surface (21) (Z direction). 5. The semiconductor light emitting device according to claim 1.

[0152] [Appendix 6] The diffusion layer (80) is in contact with the element surface (21) and covers the element surface (21). 6. The semiconductor light emitting device according to claim 5.

[0153] [Appendix 7] the surface-emitting laser element (20) is disposed close to a part of the peripheral wall (60); The thickness of the peripheral wall (60) close to the surface-emitting laser element (20) includes a portion (68) that is thinner than the thickness of the peripheral wall (60) far from the surface-emitting laser element (20). 7. The semiconductor light emitting device according to claim 1.

[0154] [Appendix 8] The peripheral wall (60) is a first peripheral wall portion (60A) located closer to the bottom wall (50) in a direction (Z direction) perpendicular to the element surface (21); a second peripheral wall portion (60B) located on the opposite side of the bottom wall (50) to the first peripheral wall portion (60A) in a direction (Z direction) perpendicular to the element surface (21), and having a thickness thinner than that of the first peripheral wall portion (60A); a step (69) formed by the first peripheral wall portion (60A) and the second peripheral wall portion (60B); Including, In a direction (Z direction) perpendicular to the element surface (21), the step (69) is located at the same position as the element surface (21) or closer to the bottom wall (50) than the element surface (21). 8. The semiconductor light emitting device according to claim 1.

[0155] [Appendix 9] The reflector (90) covers the step (69). 9. The semiconductor light emitting device of claim 8.

[0156] [Appendix 10] The reflector (90) covers an inner surface (66B) constituting the second peripheral wall portion (60B). 10. The semiconductor light emitting device according to claim 8 or 9.

[0157] [Appendix 11] The reflector (90) is made of a white resin material. 11. The semiconductor light emitting device according to any one of claims 1 to 10.

[0158] [Appendix 12] The bottom wall (50) and the peripheral wall (60) are provided as separate bodies, The reflector (90) covers the bottom wall (50), The peripheral wall (60) is made of a reflective material having a higher light reflectance than the diffusion layer (80). 12. The semiconductor light emitting device according to claim 1.

[0159] [Appendix 13] The peripheral wall (60 / 120) is disposed on the reflector (90). 13. The semiconductor light emitting device of claim 12.

[0160] [Appendix 14] A light receiving element (30) is disposed on the bottom wall (50) in the storage space (41), The light receiving element (30) is configured to receive light that is emitted from the element surface (21) of the surface emitting laser element (20) and diffused by the diffusing material (82). 14. The semiconductor light emitting device according to claim 1,

[0161] [Appendix 15] The light receiving element (30) is a light receiving surface (31) facing the same side as the element surface (21) and including a light receiving area (34) for receiving the light; a light-receiving back surface (32) facing away from the light-receiving front surface (31); a light-receiving side surface (33) connecting the light-receiving front surface (31) and the light-receiving rear surface (32); Including, The reflector (90) covers the light receiving side surface (33). 15. The semiconductor light emitting device of claim 14.

[0162] [Appendix 16] the reflector (90) is provided between the surface-emitting laser element (20) and the light-receiving element (30); The reflector (90) provided between the surface-emitting laser element (20) and the light-receiving element (30) has a surface (91) that includes a curved concave shape. 16. The semiconductor light emitting device of claim 15.

[0163] [Appendix 17] The element surface (21) of the surface-emitting laser element (20) and the light-receiving surface (31) of the light-receiving element (30) are at the same position in a direction (Z direction) perpendicular to the element surface (21). 17. The semiconductor light emitting device according to claim 15 or 16.

[0164] [Appendix 18] The light receiving element (30) is disposed close to a part of the peripheral wall (60), The thickness of the peripheral wall (60) close to the light receiving element (30) includes a portion thinner than the thickness of the peripheral wall (60) far from the light receiving element (30). 18. The semiconductor light emitting device according to claim 14,

[0165] [Appendix 19] The element container (40) includes a terminal (70) provided to penetrate the bottom wall (50), The terminal (70) is a terminal surface (71) on which the surface-emitting laser element (20) is mounted; a terminal back surface (72) facing the opposite side to the terminal front surface (71) and exposed from the bottom wall (50); Includes 19. The semiconductor light emitting device according to any one of claims 1 to 18.

[0166] The above description is merely illustrative. Those skilled in the art may recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of describing the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and alterations that fall within the scope of the present disclosure, including the scope of the claims. [Explanation of symbols]

[0167] 10...Semiconductor light-emitting device 20... Surface emitting laser element 21...Element surface 22…Back side of element 23...Side of element 24…Light emitting part 25…Light emitting area 26...Semiconductor substrate 27…Surface electrode 28…Back electrode 30...Photo-receiving element 31…Light receiving surface 32…Light receiving back side 33…Light receiving side 34…Light receiving area 35…Surface electrode 36…Back electrode 40...Element container 41…Containment space 50…Bottom wall 51...Bottom wall surface 52…Bottom wall back 53~56…Bottom wall side 60...Peripheral wall 60A…First peripheral wall portion 60B…Second peripheral wall part 61~64…Side wall 65…Surrounding wall surface 65A…First peripheral wall surface 66…Inner surface of peripheral wall 66A…Inner side of peripheral wall 66B…Inner side of peripheral wall 66C…Inner side of peripheral wall 67…Outer surface of peripheral wall 68...Thin wall part 69…Step 70…Terminal 70A…First terminal 70B…Second terminal 70C…3rd terminal 71…Terminal surface 72…Terminal back side 80...Diffusion layer 81...Resin layer 82...Diffusion material 83…Surface 90...Reflector 91…Surface 100...Substrate 101...Substrate surface 102…Back side of board 103...Side of board 111…Surface electrode 112…Back electrode 113...Through electrode 120…Case 121…Case surface 122…Case back 123…Inner surface of case 124…Outside of case 130...Resin layer W1…First wire W2…Second wire WR…Wire SD: Conductive adhesive D1: Distance in the Z direction between the terminal surface of the first terminal and the surface of the surface-emitting laser element D2: Distance in the Z direction between the terminal surface of the first terminal and the light receiving surface of the light receiving element T1: Thickness of the first peripheral wall T2: Thickness of the second peripheral wall H1: Height of the first peripheral wall

Claims

1. a surface-emitting laser element including an element surface and configured to emit laser light from the element surface; an element container including a bottom wall on which the surface-emitting laser element is disposed and a peripheral wall surrounding the surface-emitting laser element when viewed from a direction perpendicular to the element surface, the bottom wall and the peripheral wall forming a container space that contains the surface-emitting laser element and is open on the same side as the element surface; a diffusion layer that covers a surface of the element in the accommodation space and contains a diffusion material; a reflector that covers at least one of the bottom wall and the peripheral wall in the accommodation space and is made of a resin material having a reflectance higher than that of the diffusion layer; Including, The reflector is configured to reflect light emitted from the element surface and diffused by the diffusing material. Semiconductor light emitting device.

2. The reflector covers both the bottom wall and the peripheral wall. The semiconductor light emitting device according to claim 1 .

3. the peripheral wall includes a peripheral wall surface facing the same side as the element surface and disposed at a position farther from the bottom wall than the element surface; The reflector covers the peripheral wall, The surface of the reflector includes a curved concave shape formed toward the peripheral wall surface from the surface-emitting laser element toward the peripheral wall. The semiconductor light emitting device according to claim 2 .

4. The surface emitting laser element is a back surface of the element facing away from the front surface of the element; an element side surface connecting the element front surface and the element back surface; Including, The reflector covers the side surface of the element. The semiconductor light emitting device according to claim 1 .

5. the surface-emitting laser element includes a light-emitting region formed on a surface of the element, The diffusion layer covers the entire light-emitting region when viewed from a direction perpendicular to the surface of the element. The semiconductor light emitting device according to claim 1 .

6. The diffusion layer covers the surface of the element while being in contact with the surface of the element. The semiconductor light emitting device according to claim 5 .

7. the surface-emitting laser element is disposed close to a portion of the peripheral wall, The thickness of the peripheral wall close to the surface-emitting laser element includes a portion thinner than the thickness of the peripheral wall far from the surface-emitting laser element. The semiconductor light emitting device according to claim 1 .

8. The peripheral wall is a first peripheral wall portion closer to the bottom wall in a direction perpendicular to the surface of the element; a second peripheral wall portion located on the opposite side of the bottom wall with respect to the first peripheral wall portion in a direction perpendicular to the surface of the element, the second peripheral wall portion having a thickness smaller than that of the first peripheral wall portion; a step formed by the first peripheral wall portion and the second peripheral wall portion; Including, In a direction perpendicular to the element surface, the step is located at the same position as the element surface or closer to the bottom wall than the element surface. The semiconductor light emitting device according to claim 1 .

9. The reflector covers the step. The semiconductor light emitting device according to claim 8 .

10. The reflector covers an inner surface that constitutes the second peripheral wall portion. The semiconductor light emitting device according to claim 8 .

11. The reflector is made of a white resin material. The semiconductor light emitting device according to claim 1 .

12. The bottom wall and the peripheral wall are provided as separate bodies, The reflector covers the bottom wall, The peripheral wall is made of a reflective material having a higher light reflectance than the diffusion layer. The semiconductor light emitting device according to claim 1 .

13. The peripheral wall is disposed on the reflector. The semiconductor light emitting device according to claim 12.

14. a light receiving element disposed on the bottom wall of the accommodation space, The light receiving element is configured to receive light that is emitted from the element surface of the surface emitting laser element and diffused by the diffusing material. The semiconductor light emitting device according to claim 1 .

15. The light receiving element is a light receiving surface facing the same side as the element surface and including a light receiving region for receiving the light; a light-receiving back surface facing away from the light-receiving front surface; a light-receiving side surface connecting the light-receiving front surface and the light-receiving back surface; Including, The reflector covers the light receiving side surface. The semiconductor light emitting device according to claim 14.

16. the reflector is provided between the surface-emitting laser element and the light-receiving element, The surface of the reflector provided between the surface-emitting laser element and the light-receiving element includes a curved concave shape. The semiconductor light emitting device according to claim 15.

17. The element surface of the surface-emitting laser element and the light-receiving surface of the light-receiving element are at the same position in a direction perpendicular to the element surface. The semiconductor light emitting device according to claim 15.

18. The light receiving element is disposed close to a portion of the peripheral wall, The thickness of the peripheral wall closer to the light receiving element includes a portion thinner than the thickness of the peripheral wall farther from the light receiving element. The semiconductor light emitting device according to claim 14.

19. The element container includes a terminal provided to penetrate the bottom wall, The terminal is a terminal surface on which the surface-emitting laser element is mounted; a rear surface of the terminal facing away from the front surface of the terminal and exposed from the bottom wall; Includes The semiconductor light emitting device according to claim 1 .

Images