Substrate processing apparatus and method for manufacturing substrate processing apparatus

Abstract

To provide a substrate processing apparatus that improves the temperature uniformity of a support unit, and a method for manufacturing the substrate processing apparatus.SOLUTION: A substrate processing apparatus includes a support unit provided in a processing space for processing a substrate and supporting the substrate, and the support unit has a support chuck 230 including a pack 230a having a first thermal conductivity and with a concave groove formed therein and a block 230b provided in the concave groove and having a second thermal conductivity different from the first thermal conductivity.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a method for manufacturing the substrate processing apparatus. [Background technology]

[0002] The process of manufacturing a semiconductor includes a deposition process for forming a film on a semiconductor wafer (hereinafter referred to as a substrate), a chemical / mechanical polishing process for planarizing the film, a photolithography process for forming a photoresist pattern on the film, an etching process for using the photoresist pattern to form the film into a pattern having electrical properties, an ion implantation process for implanting specific ions into a predetermined area of ​​the substrate, a cleaning process for removing impurities on the substrate, and an inspection process for inspecting the surface of the substrate on which the film or pattern is formed.

[0003] An etching process is a process for removing exposed areas of a photoresist pattern formed on a substrate by a photolithography process. Etching processes can be divided into dry etching and wet etching.

[0004] In the dry etching process, high frequency power is applied to an upper electrode and a lower electrode that are installed at a predetermined distance apart in a sealed internal space where the etching process is performed to form an electric field, and the electric field is applied to a reactive gas supplied into the sealed space to activate the reactive gas into a plasma state, and then ions in the plasma etch the substrate located on the lower electrode.

[0005] At this time, it is necessary to uniformly form the plasma over the entire upper surface of the substrate. In order to uniformly form the plasma over the entire upper surface of the substrate, a ring assembly is provided. The ring assembly is installed so as to surround the edge of the support unit that supports the substrate.

[0006] In addition, the temperature of the substrate may be non-uniform depending on the region, and the non-uniform temperature may result in poor substrate yield. Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a substrate processing apparatus and a method for manufacturing the substrate processing apparatus, which are capable of improving the temperature uniformity of a supporting unit.

[0008] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0009] One aspect of a substrate processing apparatus of the present invention for achieving the above-mentioned object is a substrate processing apparatus including a support unit provided in a processing space for processing a substrate and supporting the substrate, the support unit including a puck having a first thermal conductivity and having a groove formed therein, and a block provided in the groove and having a second thermal conductivity different from the first thermal conductivity.

[0010] In order to achieve the other object, one aspect of the manufacturing method of a substrate processing apparatus of the present invention is a manufacturing method of a substrate processing apparatus that performs a plasma etching process, the method including a step of providing a support chuck that is installed in a processing space for processing a substrate and supports the substrate, the step of providing the support chuck including a step of preparing a puck having a first thermal conductivity, a step of machining a groove in the puck, and a step of providing a powder having an alumina composition ratio and a second thermal conductivity higher than the first thermal conductivity in the groove.

[0011] Another aspect of the substrate processing apparatus of the present invention for achieving the above object includes a chamber forming a processing space for processing a substrate, a gas supply unit for supplying a process gas to the processing space, a shower head provided in an upper portion of the processing space and for spraying the process gas supplied from the gas supply unit into the processing space, a supporting unit provided in the processing space and supporting the substrate, a first heat transfer medium supply unit for supplying a heat transfer medium to the supporting unit at a first fluid pressure, and a second heat transfer medium supply unit for supplying the heat transfer medium to the supporting unit at a second fluid pressure different from the first fluid pressure, wherein the supporting unit is the first circulation flow passage penetrating the support unit so that a heat transfer medium is supplied to the substrate, the first circulation flow passage including a first heat transfer medium flow passage connected to the first heat transfer medium supply unit and a second heat transfer medium flow passage connected to the second heat transfer medium supply unit; a pack having a first alumina composition ratio and a first thermal conductivity and having a groove formed therein; a support chuck including a block disposed in the groove, the block having a second alumina composition ratio different from the first alumina composition ratio and having a second thermal conductivity higher than the first thermal conductivity; and a body disposed under the pack, made of an aluminum material, and having a second circulation flow passage formed therein through which a temperature control fluid moves.

[0012] Specific details of other embodiments are included in the detailed description and drawings. [Brief description of the drawings]

[0013] [Figure 1] 1 is a diagram showing a substrate processing apparatus according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a diagram showing area A in FIG. [Diagram 3] FIG. 11 is a view showing a supporting unit of a substrate processing apparatus according to a second embodiment of the present invention. [Figure 4] 1 is a flow chart illustrating a method of manufacturing a substrate processing apparatus according to some embodiments of the present invention. [Diagram 5] 1 illustrates a puck of a substrate processing apparatus provided in accordance with some embodiments of the present invention; [Figure 6] 11A-11C are diagrams illustrating how recessed grooves are machined into a puck of a substrate processing apparatus according to some embodiments of the present invention. [Figure 7] 1 illustrates the formation of blocks in a puck of a substrate processing apparatus according to some embodiments of the present invention. [Figure 8] 1A and 1B are diagrams illustrating a state in which a first circulation channel is formed in a support chuck of a substrate processing apparatus according to some embodiments of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, as well as methods for achieving the same, will become apparent from the following detailed embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be realized in various different forms. The present embodiments are provided merely to complete the disclosure of the present invention and to fully inform those skilled in the art of the present invention of the scope of the invention, and the present invention is defined only by the scope of the claims. The same reference symbols refer to the same elements throughout the specification.

[0015] The terms used in the present specification are for the purpose of describing the embodiments and are not intended to limit the present invention. In the present specification, the singular form includes the plural form unless otherwise specified in the context. When used in the specification, "comprises" and / or "comprising" refers to a reference component, step, operation, and / or element, the term does not exclude the presence or addition of one or more other components, steps, operations, and / or elements.

[0016] FIG. 1 is a diagram showing a substrate processing apparatus according to a first embodiment of the present invention.

[0017] 1, a substrate processing apparatus 10 according to an embodiment of the present invention may include a chamber 100, a supporting unit 200, a gas supply unit 300, and a shower head 400. The substrate processing apparatus 10 may process a substrate W using plasma. Exemplarily, the substrate processing apparatus 10 may perform an etching process on the substrate W.

[0018] The chamber 100 may have a processing space 101 therein where a substrate processing process is performed. For example, the chamber 100 may have a cylindrical shape. The chamber 100 may have a shape in which the processing space 101 is sealed. The chamber 100 may be made of a metal material such as aluminum and may be grounded.

[0019] An exhaust hole 102 is formed at the bottom of the chamber 100. The exhaust hole 102 may be connected to an exhaust line 151. Reaction by-products generated during a process and gas remaining in the internal space of the chamber 100 may be exhausted to the outside through the exhaust hole 102 and the exhaust line 151. Through the exhaust process, the inside of the chamber 100 may be reduced to a predetermined pressure, for example, a vacuum atmosphere may be formed.

[0020] A supporting unit 200 may be located inside the chamber 100. The supporting unit 200 may support a substrate W. The supporting unit 200 may be provided as an electrostatic chuck that attracts the substrate W using electrostatic force. Alternatively, the supporting unit 200 may support the substrate W in various ways, such as a mechanical clamp. Hereinafter, a case in which the supporting unit 200 is provided as an electrostatic chuck will be described as an example.

[0021] By way of example, the support unit 200 may include a body 220 , a support chuck 230 and a ring assembly 290 .

[0022] The support chuck 230 may be located on the upper portion of the body 220. The body 220 may be made of a metal material such as aluminum. The upper surface of the body 220 may have a step such that a central region is higher than an edge region. The central region of the upper surface of the body 220 may have the same area as the bottom surface of the support chuck 230. The body 220 may be bonded to the bottom surface of the support chuck 230 by a bonding unit 240. The bonding unit 240 may be provided as an adhesive layer made of a silicon material, but is not limited thereto.

[0023] The body 220 may be electrically connected to a separate power source (not shown). The power source connected to the body 220 may be provided as a high frequency power source that generates high frequency power such as RF (high voltage alternating current). The body 220 receiving the high frequency power from the power source may function as an electrode.

[0024] Furthermore, a first circulation channel 221, a first supply channel 221a, and a second circulation channel 222 may be formed inside the body 220.

[0025] The first circulation flow passage 221 may be provided as a passage through which a heat transfer medium circulates. For example, the first circulation flow passage 221 may be arranged such that ring-shaped flow passages having different radii are aligned with the same center, and each first circulation flow passage 221 may be separated from the others so that a separate heat transfer medium may pass through each of the first circulation flow passages 221. This will be described with reference to FIG.

[0026] The first circulation passage 221 may be connected to a heat transfer medium storage unit (not shown) via a heat transfer medium supply line (not shown). A heat transfer medium may be stored in the heat transfer medium storage unit. The heat transfer medium may be an inert gas such as helium gas. The helium gas may be supplied to the first circulation passage 221 via the heat transfer medium supply line. The helium gas passing through the first circulation passage 221 may act as a medium for transferring heat of the substrate W. That is, the substrate W may be cooled by the helium gas.

[0027] A plurality of first supply passages 221a may be provided, and the first supply passages 221a may extend upward from the first circulation passage 221. For example, the first supply passages 221a may supply the heat transfer medium to the bottom surface of the substrate W by penetrating the body 220 and the support chuck 230. The first supply passages 221a and the first circulation passage 221 may serve as passages for recovering the heat transfer medium after etching of the substrate W is completed.

[0028] That is, helium gas can be supplied to the bottom surface of the substrate W via the first circulation passage 221 and the first supply passage 221a, and then recovered to the heat transfer medium storage section again via the first supply passage 221a and the first circulation passage 221, but is not limited to this.

[0029] The second circulation flow passage 222 may be provided as a passage through which a cooling fluid (e.g., cooling water) circulates as a temperature control fluid. The second circulation flow passage 222 may be formed in a spiral shape inside the body 220. Alternatively, the second circulation flow passage 222 may be arranged such that ring-shaped flow passages having different radii have the same center. Each of the second circulation flow passages 222 may be connected to each other. The second circulation flow passage 222 may have a larger cross-sectional area than the first circulation flow passage 221. A plurality of second circulation flow passages 222 may be formed at the same height. The second circulation flow passage 222 may be located below the first circulation flow passage 221.

[0030] The second circulation passage 222 may be connected to a cooling fluid storage unit (not shown) via a cooling fluid supply line (not shown). A cooling fluid may be stored in the cooling fluid storage unit. A cooler (not shown) may be provided in the cooling fluid storage unit. The cooler may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler may be installed on the cooling fluid supply line. The cooling fluid supplied to the second circulation passage 222 via the cooling fluid supply line may circulate along the second circulation passage 222 to cool the body 220. As the body 220 is cooled, the support chuck 230 and the substrate W may be cooled together, thereby maintaining the substrate W at a predetermined temperature.

[0031] The support chuck 230 may be located on the upper part of the body 220. The support chuck 230 may be provided as a disk-shaped dielectric substance. The substrate W may be placed on the upper surface of the support chuck 230. The upper surface of the support chuck 230 may have a radius smaller than that of the substrate W, but is not limited thereto. The edge region of the substrate W may be located outside the support chuck 230, but is not limited thereto. That is, the edge region of the substrate W may be located on the ring assembly 290, but various modifications are possible. Although not shown in the drawings, the support chuck 230 may have a number of embossments. Helium gas, which is a heat transfer medium, discharged from the first circulation channel 221 may be supplied to recesses between the embosses.

[0032] Further, the support chuck 230 may be provided with a first electrode 231 therein. The first electrode 231 may be electrically connected to a first power source 231a. The first power source 231a may include a power source. A switch 231b may be provided between the first electrode 231 and the first power source 231a. The first electrode 231 may be electrically connected to the first power source 231a by turning on / off the switch 231b. When the switch 231b is turned on, a current may be applied to the first electrode 231. An electrostatic force acts between the first electrode 231 and the substrate W due to the current applied to the first electrode 231, and the substrate W may be attracted to the support chuck 230 due to the electrostatic force. However, the support chuck 230 is not limited to an electrostatic chuck, and various modified examples are possible.

[0033] The ring assembly 290 can focus the plasma at the substrate. Although not shown in the drawings, the ring assembly 290 can be implemented as a combination of one or more rings, such as an inner ring surrounding the support chuck 230 and an outer ring surrounding the inner ring.

[0034] Furthermore, in the supporting unit 200 of the present embodiment, the thermal conductance may be different depending on the region of the substrate W in order to improve the temperature uniformity, which will be described with reference to FIG.

[0035] The gas supply unit 300 may supply process gases to the interior of the chamber 100. The gas supply unit 300 may include a gas feeder 310, a gas supply line 320, and a gas reservoir 330.

[0036] The gas in the gas storage unit 330 may be supplied to the inside of the chamber 100 through the gas feeder 310 via the gas supply pipe 320. For example, the gas feeder 310 may be installed at the center of the upper surface of the chamber 100.

[0037] The showerhead 400 may be spaced a certain distance from the top of the chamber 100 to the bottom, forming a certain space above the chamber 100. The showerhead 400 may be formed in a plate shape with a certain thickness. The showerhead 400 may have a plurality of injection holes SH formed therein. The injection holes SH may vertically penetrate the showerhead 400 to inject a process gas into the processing space 101.

[0038] The showerhead 400 may be made of a metal material, and the bottom surface of the showerhead 400 may be anodized to prevent arc generation by plasma. The showerhead 400 may be electrically connected to a separate power source (not shown). The power source for the showerhead 400 may be provided as a high frequency power source (e.g., high voltage AC). Alternatively, the showerhead 400 may be electrically grounded. The showerhead 400 may be electrically connected to a power source or may be grounded to function as an electrode. For example, the showerhead 400 may be provided to have the same or similar diameter as the support plate 200.

[0039] The support unit 200 will be described below with reference to the drawings, and the same description as above will be omitted.

[0040] FIG. 2 is a diagram showing area A in FIG.

[0041] 2, the support unit 200 of the first embodiment may include a body 220, a support chuck 230, and a first circulation channel 221. The support chuck 230 may include a puck 230a and a block 230b.

[0042] The pack 230a may have a first thermal conductivity. For example, the first thermal conductivity may be formed with an alumina (Al2O3) composition ratio having a lower thermal conductivity than the second thermal conductivity. A groove 230ah (see FIG. 7) may be formed in the pack 230a. The groove 230ah is provided to make the pack 230a and the block 230b at the same level without the block 230b protruding from the pack 230a.

[0043] That is, the block 230b and the pack 230a may be formed at the same level. This is achieved by providing the block 230b inside the groove 230ah without protruding. However, the present invention is not limited to this. Also, although not shown in the drawings, an embossment (not shown) may be provided on the upper surface of the pack 230a and / or the block 230b with the same material and component ratio as the pack 230a and / or the block 230b, respectively, and an outer dam may be formed corresponding to the edge of the substrate W, and an inner dam may be formed spaced apart from the outer dam. The outer dam allows a heat transfer medium such as helium gas to remain on the bottom surface of the substrate W.

[0044] The block 230b may be disposed in the groove 230ah and may have a second thermal conductivity different from the first thermal conductivity, for example, the second thermal conductivity may be formed of an alumina composition ratio having a higher thermal conductivity than the first thermal conductivity.

[0045] The first circulation passage 221 may penetrate the support chuck 230 of the support unit 200 and may include a first heat transfer medium passage 2211 and second heat transfer medium passages 2212, 2213, and 2214 through which different fluid pressures pass or are discharged.

[0046] The first heat transfer medium flow passage 2211 may pass or discharge the heat transfer medium at a first fluid pressure. For example, the first fluid pressure may be supplied to a region of the substrate W having a relatively lower temperature (e.g., see FIG. 3, a first substrate region WC which is a center region of the substrate W). In this case, the first fluid pressure may be lower than the second fluid pressure.

[0047] The second heat transfer medium flow paths 2212, 2213, 2214 may pass through or discharge a heat transfer medium at a pressure different from the first fluid pressure, for example, a second fluid pressure higher than the first fluid pressure. For example, the second fluid pressure may be supplied to a region of the substrate W having a relatively higher temperature (e.g., see FIG. 3, a second substrate region WM which is a middle region of the substrate W and / or a third substrate region WE which is an edge region of the substrate W). In this case, the second fluid pressure higher than the first fluid pressure may have a higher thermal conductivity than the heat transfer medium at the first fluid pressure.

[0048] In this manner, in this embodiment, the alumina component ratios of the pack 230a and the block 230b may be different, and the fluid pressure of the heat transfer medium supplied to the substrate W may be different. This is to allow the substrate to be cooled with different thermal conductivities in order to uniformize the temperature of the substrate W.

[0049] Here, a first zone (not shown) where an outlet of the first heat transfer medium flow path 2211 is formed, and a second zone (not shown) where outlets of the second heat transfer medium flow paths 2212, 2213, and 2214 are formed may be formed. The first zone may correspond to a first substrate region WC having a first temperature, and the second zone may correspond to a second substrate region WM and / or a third substrate region WE having a second temperature.

[0050] Further, the first heat transfer medium supply unit 221b1 may be connected to the first heat transfer medium passage 2211 and may supply the heat transfer medium at a first fluid pressure. The second heat transfer medium supply units 221b2, 221b3, and 221b4 may be connected to the second heat transfer medium passages 2212, 2213, and 2214 and may supply the heat transfer medium at a second fluid pressure. Here, the second fluid pressure of the second heat transfer medium supply units 221b2, 221b3, and 221b4 and the second heat transfer medium passages 2212, 2213, and 2214 may be provided such that a higher fluid pressure is supplied toward the edge of the substrate W.

[0051] Furthermore, the first heat transfer medium supply unit 221b1 may include a first heat transfer medium supply line (not shown) and a first heat transfer medium storage unit (not shown). The second heat transfer medium supply units 221b2, 221b3, and 221b4 may include a second heat transfer medium supply line (not shown) and a second heat transfer medium storage unit (not shown).

[0052] That is, the first heat transfer medium supply unit 221b1 and the second heat transfer medium supply units 221b2, 221b3, and 221b4 may be separated from each other to supply heat transfer medium at different first and second fluid pressures. Furthermore, when a plurality of second heat transfer medium supply units 221b2, 221b3, and 221b4 are provided, they may be separated from each other to supply fluids at different pressures. For example, the first heat transfer medium supply line may be provided with a first orifice (not shown) forming a first fluid pressure, and the second heat transfer medium supply line may be provided with a second orifice forming a second fluid pressure.

[0053] A modified example of this embodiment will be described below with reference to FIG. 3, and a duplicated description of the same configuration having the same function will be omitted.

[0054] 3 is a view showing a supporting unit of a substrate processing apparatus according to a second embodiment of the present invention, and will be described with reference to FIG.

[0055] 3, the support unit 200 of the second embodiment may include a body 220, a support chuck 230, and a first circulation channel 221, which are the same as or similar to those of the first embodiment. The support chuck 230 may include a puck 230a and a block 230b.

[0056] In addition, the block 230b of the support unit 200 of the second embodiment may include a first block body 230b1 and a second block body 230b2. The first block body 230b1 may have a first thickness. The second block body 230b2 may have a second thickness greater than the first thickness.

[0057] Here, the substrate W may include a first substrate region WC having a first temperature, a second substrate region WM having a second temperature higher than the first temperature, and a third substrate region WE having a third temperature higher than the second temperature. For example, the first substrate region WC may be a central region of the substrate W. The second substrate region WM may be a middle region of the substrate W. The third substrate region WE may be an edge region of the substrate W.

[0058] For example, the temperature of the substrate W may increase from the center to the edge, and for temperature uniformity, the exposed surface of the pack 230a may face the first substrate region WC, the first block body 230b1 may face the second substrate region WM, and the second block body 230b2 may face the third substrate region WE.

[0059] Furthermore, by combining the second embodiment with the first embodiment, this embodiment may be the same or similar to the first embodiment, in which a first zone (not shown) in which the outlet of the first heat transfer medium flow path 2211 is formed corresponds to a first substrate region WC, and a second zone in which the outlets of the second heat transfer medium flow paths 2212, 2213, 2214 are formed corresponds to a second substrate region WM and / or a third substrate region WE having a second temperature and / or a third temperature.

[0060] Also, the first supply flow passage 221a of the second embodiment may be connected to the first heat transfer medium flow passage 2211, or the first supply flow passages 221a1, 221a2, and 221a3 may be formed separately from each other so as to be connected separately to the second heat transfer medium flow passages 2212, 2213, and 2214. This may be the same as or similar to the first supply flow passage 221a of the first embodiment.

[0061] A method for manufacturing the supporting unit 200 of the substrate processing apparatus 10 will be described below with reference to the drawings.

[0062] Figure 4 is a flow chart illustrating a method for manufacturing a substrate processing apparatus according to some embodiments of the present invention. Figure 5 illustrates a pack of a substrate processing apparatus according to some embodiments of the present invention is provided, and Figure 6 illustrates a groove being machined in a pack of a substrate processing apparatus according to some embodiments of the present invention. Also, Figure 7 illustrates a block being formed in a pack of a substrate processing apparatus according to some embodiments of the present invention, and Figure 8 illustrates a first circulation channel being formed in a support chuck of a substrate processing apparatus according to some embodiments of the present invention.

[0063] Referring to Figures 4 to 8, a method for manufacturing a substrate processing apparatus 10 may include providing a support chuck 230 that is installed in a processing space 101 for processing a substrate and supports the substrate W, and forming a first circulation passage 221 that passes through the support chuck 230 so that a heat transfer medium passes through the substrate W.

[0064] Here, the step of providing the support chuck 230 may include the steps of preparing a pack 230a having a first thermal conductivity (S110), machining a groove 230ah in the pack 230a (S120), and providing a powder having an alumina composition ratio and a second thermal conductivity higher than the first thermal conductivity in the groove 230ah (S130).

[0065] 4 and 5, a puck 230a is provided having a first thermal conductivity, which may be provided by a first alumina composition ratio, which may be less thermally conductive than a second thermal conductivity.

[0066] This is because the thermal conductivity of the pack 230a is lower than the second thermal conductivity of the block 230b, facilitating the transfer of heat. In other words, heat transfers from the high side to the low side, that is, the heat transfers from the substrate W to the block 230b, and then from the block 230b to the pack 230a, and then to the second circulation channel 222 of the body 220.

[0067] Therefore, by forming the block 230b on the side where the temperature is relatively high and allowing heat to move from the block 230b to the pack 230a, it is possible to facilitate heat exchange in the high temperature region. In other words, if the thermal conductivity of the block 230b is lower than that of the pack 230a, the heat of the block 230b is less likely to move to the pack 230a, making heat exchange in the block 230b difficult, and this is to prevent this.

[0068] 4 and 6, the groove 230ah is processed in the pack 230a. For example, the groove 230ah can be formed by sanding the pack 230a. The sanding can be performed by providing a mask M having holes corresponding to the groove 230ah on the upper surface of the pack 230a, and then spraying sand onto the mask M, but is not limited thereto.

[0069] 4 and 7, powder P having an alumina content ratio and a second thermal conductivity higher than the first thermal conductivity is provided in the groove 230ah. After providing the powder P, the powder P may be compressed by a method such as pressing to form a block 230b (S140).

[0070] 8, after providing the support chuck 230, a first circulation channel 221 and / or a first supply channel 221a may be formed through the support chuck 230 to pass a heat transfer medium to the substrate W.

[0071] 2 and 3, by forming the first circulation flow path 221, a first heat transfer medium flow path 2211 connected to a first heat transfer medium supply unit 221b1 that supplies a heat transfer medium at a first fluid pressure can be formed. At the same time or subsequently, second heat transfer medium flow paths 2212, 2213, and 2214 connected to second heat transfer medium supply units 221b2, 221b3, and 221b4 that supply a heat transfer medium at a second fluid pressure different from the first fluid pressure can be formed.

[0072] Although the embodiment of the present invention has been described above with reference to the accompanying drawings, those skilled in the art will understand that the present invention can be embodied in other specific forms without changing the technical idea or essential features of the present invention. Therefore, it should be understood that the above embodiment is illustrative in all respects and is not limiting. [Explanation of symbols]

[0073] 10 Substrate processing equipment 100 Chamber 200 Support Units 220 Body 230 Support chuck 230a Pack Block 230b 240 First Coat Layer 250 Bonding Unit 260 Second Coat Layer 300 Gas Supply Unit 400 shower head

Claims

1. a support unit provided in a processing space for processing a substrate and supporting the substrate; The support unit includes: a grooved puck having a first thermal conductivity; and The substrate processing apparatus includes a block provided in the groove and having a second thermal conductivity different from the first thermal conductivity.

2. The substrate processing apparatus of claim 1 , wherein the second thermal conductivity is higher than the first thermal conductivity.

3. The substrate processing apparatus of claim 2 , wherein the first thermal conductivity is formed with an alumina composition ratio having a thermal conductivity lower than that of the second thermal conductivity.

4. The block is The substrate processing apparatus of claim 2 , comprising a first block body having a first thickness and a second block body having a second thickness greater than the first thickness.

5. the substrate includes a first substrate region having a first temperature, a second substrate region having a second temperature higher than the first temperature, and a third substrate region having a third temperature higher than the second temperature; an exposed surface of the puck facing the first substrate region; the first block body faces the second substrate region, The substrate processing apparatus according to claim 4 , wherein the second block body faces the third substrate region.

6. the support unit is formed with a first circulation passage passing through the support unit so that a heat transfer medium is supplied to the substrate; The first circulation flow path is a first heat transfer medium flow passage through which the heat transfer medium is passed or discharged at a first fluid pressure; and The substrate processing apparatus of claim 1 , further comprising a second heat transfer medium flow path through which the heat transfer medium passes or is discharged at a second fluid pressure different from the first fluid pressure.

7. The support unit includes: The substrate processing apparatus of claim 6 , further comprising a first zone in which an outlet of the first heat transfer medium flow path is formed, and a second zone in which an outlet of the second heat transfer medium flow path is formed.

8. a first heat transfer medium supply unit in communication with the first heat transfer medium flow passage and configured to supply the heat transfer medium at the first fluid pressure; and The substrate processing apparatus of claim 6 , further comprising a second heat transfer medium supply unit in communication with the second heat transfer medium flow passage and configured to supply the heat transfer medium at the second fluid pressure.

9. A chamber in which the processing space is formed; and The substrate processing apparatus of claim 1 , further comprising a body made of aluminum and disposed under the pack, the body having a second circulation passage through which the temperature control fluid moves.

10. A gas supply unit for supplying a process gas to the processing space; and 10. The substrate processing apparatus according to claim 9, further comprising a shower head provided in an upper portion of the processing space and configured to inject the process gas supplied from the gas supply unit into the processing space.

11. In a manufacturing method of a substrate processing apparatus including a plasma etching process, providing a support chuck disposed in a processing space for processing a substrate and supporting the substrate; The step of providing a support chuck comprises: Providing a puck having a first thermal conductivity; machining a groove in the puck; and A method for manufacturing a substrate processing apparatus, comprising: providing a powder having an alumina composition ratio and a second thermal conductivity higher than the first thermal conductivity in the groove.

12. The step of providing a support chuck comprises: After the step of providing the powder, The method of claim 11 , further comprising the step of compressing the powder.

13. The step of machining the groove includes: The method for manufacturing a substrate processing apparatus according to claim 11 , further comprising the step of sanding the puck.

14. After the step of providing a support chuck, The method of claim 11 , further comprising forming a first circulation passage through the support chuck so that a heat transfer medium passes through the substrate.

15. The step of forming the first circulation flow path includes: forming a first heat transfer medium flow passage connected to a first heat transfer medium supply unit that supplies the heat transfer medium at a first fluid pressure; and 15. The method of claim 14, further comprising forming a second heat transfer medium flow path connected to a second heat transfer medium supply unit that supplies the heat transfer medium at a second fluid pressure different from the first fluid pressure.

16. a chamber forming a processing space for processing a substrate; a gas supply unit for supplying a process gas to the treatment space; a shower head provided at an upper portion of the processing space and configured to inject the process gas supplied from the gas supply unit into the processing space; a supporting unit provided in the processing space and supporting the substrate; a first heat transfer medium supply unit for supplying a heat transfer medium to the support unit at a first fluid pressure; and a second heat transfer medium supply unit that supplies the heat transfer medium to the support unit at a second fluid pressure different from the first fluid pressure; The support unit includes: a first circulation passage penetrating the support unit so as to supply a heat transfer medium to the substrate, the first circulation passage including a first heat transfer medium passage connected to the first heat transfer medium supply unit and a second heat transfer medium passage connected to the second heat transfer medium supply unit; a support chuck including: a pack having a first alumina composition ratio and a first thermal conductivity, the pack having a groove formed therein; and a block disposed in the groove, the block having a second alumina composition ratio different from the first alumina composition ratio, and a second thermal conductivity higher than the first thermal conductivity; and The substrate processing apparatus further comprises a body provided at a lower portion of the pack and made of an aluminum material, the body having a second circulation passage formed therein through which a temperature control fluid moves.

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