Semiconductor device

Abstract

To provide a semiconductor device which can achieve high voltage resistance.SOLUTION: A semiconductor device A10 includes a semiconductor element 6, a conductive member 5 conductive to the semiconductor element 6, and a sealing resin 8 coating the semiconductor element 6. The conductive member 5 includes a mounting part 110 mounted with the semiconductor element 6, a first terminal 120 and a second terminal 220. The sealing resin 8 includes a resin end face 83 that is directed in an x direction and from which the first terminal 120 projects, and a resin second side face 85 that is directed in a direction different from that of the resin end face 83, and from which the second terminal 220 projects. The first terminal 120 extends in the x direction. The second terminal 220 includes a second projection part 221 projecting from the resin second side face 85, a second straight part 222 extending in the x direction, and a second connection part 223 connected to the second projection part 221 and the second straight part 222.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in the document includes a semiconductor element, multiple leads, and a sealing resin. The semiconductor element is mounted on a first lead, and a collector electrode on the back surface is electrically connected to the first lead. Also, an emitter electrode on the main surface of the semiconductor element is electrically connected to a third lead. The sealing resin covers each of the multiple leads and the semiconductor element. Both the first terminal of the first lead and the third terminal of the third lead protrude from the first resin side surface of the sealing resin. When a high voltage (for example, several thousand V) is applied between the first terminal and the third terminal of the semiconductor device, discharge occurs on the surface of the sealing resin between the first terminal and the third terminal, and the first terminal and the third terminal may be short-circuited. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-14490 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device that can withstand a high voltage. [Means for solving the problem]

[0005] The semiconductor device provided by the present disclosure comprises a semiconductor element, a conductive member electrically connected to the semiconductor element, and a sealing resin covering the semiconductor element, the conductive member comprising a mounting portion on which the semiconductor element is mounted, and a first terminal and a second terminal, the sealing resin comprising a resin first surface facing a first direction perpendicular to a thickness direction of the mounting portion and from which the first terminal protrudes, and a resin second surface facing a direction different from the resin first surface and from which the second terminal protrudes, the first terminal extending in the first direction, and the second terminal comprising a protruding portion protruding from the resin second surface, a straight portion extending in the first direction, and a connecting portion connecting the protruding portion and the straight portion. Effect of the Invention

[0006] The semiconductor device according to the present disclosure can achieve high voltage resistance.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a perspective view of the semiconductor device shown in FIG. 1, seen through a sealing resin. [Diagram 3] FIG. 3 is a plan view of the semiconductor device shown in FIG. 1, seen through a sealing resin. [Figure 4] FIG. 4 is a bottom view of the semiconductor device shown in FIG. [Diagram 5] FIG. 5 is a left side view of the semiconductor device shown in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a bottom view showing the semiconductor device according to the first modified example of the first embodiment. [Figure 9] FIG. 9 is a cross-sectional view of the semiconductor device shown in FIG. [Figure 10] FIG. 10 is a cross-sectional view showing a semiconductor device according to a second modification of the first embodiment. [Figure 11] FIG. 11 is a cross-sectional view showing a semiconductor device according to a third modification of the first embodiment. [Figure 12] FIG. 12 is a cross-sectional view showing a semiconductor device according to a fourth modification of the first embodiment. [Figure 13] FIG. 13 is a plan view showing a semiconductor device according to a fifth modified example of the first embodiment, seen through a sealing resin. [Figure 14] FIG. 14 is a plan view showing the semiconductor device according to the second embodiment of the present disclosure, seen through a sealing resin. [Figure 15] FIG. 15 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure, seen through a sealing resin. [Figure 16] FIG. 16 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure, seen through a sealing resin. [Figure 17] FIG. 17 is a plan view showing a semiconductor device according to a fifth embodiment of the present disclosure, seen through a sealing resin. [Figure 18] FIG. 18 is a perspective view showing a semiconductor device according to the sixth embodiment of the present disclosure. [Figure 19] FIG. 19 is a plan view of the semiconductor device shown in FIG. 18, seen through the sealing resin. [Figure 20] FIG. 20 is a left side view of the semiconductor device shown in FIG. [Figure 21] FIG. 21 is a perspective view showing a semiconductor device according to the seventh embodiment of the present disclosure. [Figure 22] FIG. 22 is a plan view of the semiconductor device shown in FIG. 21, seen through the sealing resin. [Diagram 23] FIG. 23 is a perspective view showing a semiconductor device according to the eighth embodiment of the present disclosure. [Figure 24] FIG. 24 is a cross-sectional view of the semiconductor device shown in FIG. [Diagram 25] FIG. 25 is a plan view showing a semiconductor device according to the ninth embodiment of the present disclosure, seen through a sealing resin. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0010] In this disclosure, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B in contact with a certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B". In addition, unless otherwise specified, "an object A overlaps with an object B when viewed in a certain direction" includes "an object A overlaps with the entirety of an object B" and "an object A overlaps with a part of an object B."

[0011] [First embodiment] A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to Figures 1 to 7. The semiconductor device A10 includes a conductive member 5, a semiconductor element 6, wires 71 and 72, and a sealing resin 8.

[0012] FIG. 1 is a perspective view showing the semiconductor device A10. FIG. 2 is a perspective view of the semiconductor device A10. In FIG. 2, the sealing resin 8 is seen through for ease of understanding. FIG. 3 is a plan view of the semiconductor device A10. In FIG. 3, the sealing resin 8 is seen through for ease of understanding, and the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line). FIG. 4 is a bottom view of the semiconductor device A10. FIG. 5 is a left side view of the semiconductor device A10. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3.

[0013] The semiconductor device A10 shown in these figures is a device mounted on a circuit board of various devices. The use and function of the semiconductor device A10 are not limited. The package format of the semiconductor device A10 is a SIP (Single Inline Package). The package format of the semiconductor device A10 is not limited to the SIP. The shape of the part of the semiconductor device A10 covered with the sealing resin 8 is rectangular when viewed in the thickness direction. For convenience of explanation, the thickness direction (direction when viewed in a plane) of the semiconductor device A10 is defined as the z direction, the extension direction (up and down direction in Figures 3 and 4) of the terminals of the semiconductor device A10 perpendicular to the z direction (first perpendicular portion 121 of the first terminal 120, second perpendicular portion 222 of the second terminal 220, and third perpendicular portion 322 of the third terminal 320, which will be described later) is defined as the x direction, and the direction perpendicular to the z direction and the x direction (left and right direction in Figures 3 and 4) is defined as the y direction. Moreover, one side in the z direction (the lower side in Figs. 5 to 7) is the z1 side, and the other side (the upper side in Figs. 5 to 7) is the z2 side. One side in the x direction (the lower side in Figs. 3 and 4) is the x1 side, and the other side (the upper side in Figs. 3 and 4) is the x2 side. One side in the y direction (the left side in Fig. 3) is the y1 side, and the other side (the right side in Fig. 3) is the y2 side. The z direction corresponds to the "thickness direction" of this disclosure, the x direction corresponds to the "first direction" of this disclosure, and the y direction corresponds to the "second direction" of this disclosure. Each dimension of the semiconductor device A10 is not particularly limited.

[0014] The conductive member 5 is electrically connected to the semiconductor element 6, and forms a conductive path between the semiconductor element 6 and the circuit wiring when the semiconductor device A10 is mounted on a circuit board. The conductive member 5 is formed, for example, by punching or bending a metal plate. The conductive member 5 is made of a metal, and is preferably made of either Cu or Ni, or an alloy thereof or a 42 alloy. In this embodiment, the conductive member 5 is made of Cu. The thickness of the conductive member 5 is not particularly limited. The conductive member 5 includes a first lead 1, a second lead 2, and a third lead 3.

[0015] The first lead 1 supports the semiconductor element 6 and is electrically connected to the semiconductor element 6. The first lead 1 includes a mounting portion 110 and a first terminal 120.

[0016] The mounting portion 110 is a portion on which the semiconductor element 6 is mounted, and is generally rectangular when viewed in the z direction. The mounting portion 110 includes a mounting portion main surface 111, a mounting portion back surface 112, a mounting portion end surface 114, and a mounting portion through hole 113. The mounting portion main surface 111 and the mounting portion back surface 112 face opposite sides to each other in the z direction. The mounting portion main surface 111 faces the z2 side in the z direction. The mounting portion main surface 111 is bonded to the semiconductor element 6. The mounting portion back surface 112 faces the z1 side in the z direction. The mounting portion back surface 112 is exposed from the sealing resin 8 and serves as a back surface terminal. The mounting portion end surface 114 is connected to the mounting portion main surface 111 and the mounting portion back surface 112, and faces the x1 side in the x direction. The mounting portion through hole 113 is a hole that penetrates parallel to the z direction from the mounting portion main surface 111 to the mounting portion back surface 112. The mounting portion through-hole 113 is disposed in the center of the mounting portion 110 in the y direction and toward the x2 side in the x direction (toward the upper side in FIGS. 3 and 4), and has a circular shape when viewed in the z direction. The position and shape of the mounting portion through-hole 113 are not limited.

[0017] The first terminal 120 is connected to the mounting portion 110 and is electrically connected to the semiconductor element 6 via the mounting portion 110. As shown in FIG. 3, the width dimension (dimension in the y direction) of the first terminal 120 is smaller than the width dimension (dimension in the y direction) of the mounting portion 110. Also, as shown in FIG. 6, the thickness dimension (dimension in the z direction) of the first terminal 120 is smaller than the thickness dimension (dimension in the z direction) of the mounting portion 110. In other words, the thickness dimension of the mounting portion 110 is larger than the thickness dimension of the first terminal 120. In this embodiment, the first terminal 120 is connected to the center of the mounting portion end surface 114 in the y direction as shown in FIG. 3 and to the end portion of the mounting portion end surface 114 on the z direction z2 side as shown in FIG. 6. The position of the first terminal 120 is not limited. The first terminal 120 extends in the x direction and protrudes from the sealing resin 8 to the x1 side in the x direction.

[0018] The first terminal 120 includes a first straight portion 121 and a first connection portion 122. The first straight portion 121 is a portion extending straight along the x direction, and includes a portion covered with the sealing resin 8 and a portion protruding from the sealing resin 8. The first straight portion 121 includes a base end portion 121a and a tip end portion 121b. The base end portion 121a is a portion of the first straight portion 121 located on the x2 side in the x direction, and includes a portion covered with the sealing resin 8 and a portion protruding from the sealing resin 8. The tip end portion 121b is a portion of the first straight portion 121 located on the x1 side in the x direction, and is connected to the base end portion 121a. The tip end portion 121b is entirely exposed from the sealing resin 8, and has a width dimension (dimension in the y direction) smaller than that of the base end portion 121a.

[0019] The first connection portion 122 is a portion that connects the first straight portion 121 and the mounting portion 110, and is connected to the first straight portion 121 and the mounting portion 110. The first connection portion 122 is entirely covered with sealing resin 8, and includes a portion that is inclined with respect to the mounting portion 110 and the first straight portion 121. The first straight portion 121 has a surface that faces the same side as the mounting portion main surface 111 (a surface that faces the z-direction z2 side) that is located on the z-direction z2 side with respect to the mounting portion main surface 111. Therefore, the inclined portion of the first connection portion 122 is inclined so that the x-direction x1 side is closer to the z-direction z2 side.

[0020] The shape of the first lead 1 is not limited to the above. For example, in order to prevent the first lead 1 from falling off from the sealing resin 8 in the z direction z1, the mounting portion 110 may have a back-side recess formed around the mounting portion back surface 112 as viewed in the z direction, recessed from the mounting portion back surface 112 toward the mounting portion main surface 111 and covered by the sealing resin 8.

[0021] The second lead 2 is electrically connected to the semiconductor element 6. The second lead 2 is disposed apart from the first lead 1. As shown in FIG. 3, the second lead 2 is disposed on the x1 side of the mounting portion 110 of the first lead 1 in the x direction and on the y1 side of the first terminal 120 in the y direction. As shown in FIG. 5 and FIG. 7, the second lead 2 is disposed on the z2 side of the mounting portion 110 in the z direction. The position of the second lead 2 in the z direction is the same as the position of the first perpendicular portion 121 of the first terminal 120 of the first lead 1 in the z direction. The second lead 2 includes a second pad portion 210 and a second terminal 220.

[0022] The second pad portion 210 is a portion to which the wire 71 is bonded, and has a generally rectangular shape that is long in the y direction when viewed in the z direction. As shown in FIG. 7, the second pad portion 210 has a second pad portion main surface 211 and a second pad portion back surface 212. The second pad portion main surface 211 and the second pad portion back surface 212 face opposite sides to each other in the z direction. The second pad portion main surface 211 faces the z2 side in the z direction. The wire 71 is bonded to the second pad portion main surface 211. The second pad portion back surface 212 faces the z1 side in the z direction. The second pad portion 210 is entirely covered with a sealing resin 8.

[0023] The second terminal 220 is connected to the second pad portion 210 and is electrically connected to the semiconductor element 6 via the second pad portion 210 and the wire 71. As shown in Fig. 7, the thickness dimension (dimension in the z direction) of the second terminal 220 is the same as the thickness dimension (dimension in the z direction) of the second pad portion 210, and is the same as the thickness dimension of the first terminal 120. As shown in Fig. 3, the second terminal 220 is connected to a central portion in the x direction of an end portion on the y1 side of the y direction of the second pad portion 210. The second terminal 220 protrudes from the sealing resin 8 to the y1 side in the y direction, bends, and extends to the x1 side in the x direction.

[0024] The second terminal 220 includes a second protruding portion 221, a second straight portion 222, and a second connecting portion 223. The second protruding portion 221 is connected to the second pad portion 210, extends in the y direction y1, and protrudes from the sealing resin 8. The width dimension (dimension in the x direction) of the second protruding portion 221 is smaller than the width dimension (dimension in the x direction) of the second pad portion 210. The second straight portion 222 is a portion that extends straight along the x direction. The second straight portion 222 is entirely exposed from the sealing resin 8. The width dimension (dimension in the y direction) of the second straight portion 222 is the same as the width dimension of the tip portion 121b of the first straight portion 121 of the first terminal 120. The position of the second straight portion 222 in the z direction is the same as the position of the first straight portion 121 of the first terminal 120 in the z direction. The second connecting portion 223 is a portion that connects the second protruding portion 221 and the second straight portion 222, and is connected to the second protruding portion 221 and the second straight portion 222. The second connecting portion 223 is entirely exposed from the sealing resin 8. The second connecting portion 223 is L-shaped when viewed in the z direction, and includes a portion that extends from an end portion on the y-direction y1 side of the second protruding portion 221 to the x-direction x1 side, and a portion that extends from an end portion on the x-direction x2 side of the second straight portion 222 to the y-direction y1 side. In this embodiment, the edge on the x-direction x1 side of the second connecting portion 223 coincides in position in the x direction with the edge on the x-direction x1 side of the base end portion 121a of the first straight portion 121 (the boundary between the base end portion 121a and the tip end portion 121b). The shape of the second lead 2 is not limited to the above.

[0025] The third lead 3 is electrically connected to the semiconductor element 6. The third lead 3 is disposed apart from the first lead 1 and the second lead 2. As shown in FIG. 3, the third lead 3 is disposed on the x1 side of the mounting portion 110 of the first lead 1 in the x direction and on the y2 side of the first terminal 120 in the y direction. The third lead 3 is disposed on the z2 side of the mounting portion 110 in the z direction. The position of the third lead 3 in the z direction is the same as the position of the first perpendicular portion 121 of the first terminal 120 of the first lead 1 in the z direction. That is, the first perpendicular portion 121 of the first terminal 120, the second lead 2, and the third lead 3 are in the same position in the z direction. The third lead 3 includes a third pad portion 310 and a third terminal 320.

[0026] The third pad portion 310 is a portion to which the wire 72 is bonded, and has a generally rectangular shape that is long in the y direction when viewed in the z direction. The third pad portion 310 has a third pad portion main surface 311 and a third pad portion back surface 312. The third pad portion main surface 311 and the third pad portion back surface 312 face opposite each other in the z direction. The third pad portion main surface 311 faces the z2 side in the z direction. The third pad portion main surface 311 is bonded to the wire 72. The third pad portion back surface 312 faces the z1 side in the z direction. The third pad portion 310 is entirely covered with a sealing resin 8.

[0027] The third terminal 320 is connected to the third pad portion 310, and is electrically connected to the semiconductor element 6 via the third pad portion 310 and the wire 72. The thickness dimension (dimension in the z direction) of the third terminal 320 is the same as the thickness dimension (dimension in the z direction) of the third pad portion 310, and is the same as the thickness dimension of the first terminal 120. As shown in Fig. 3, the third terminal 320 is connected to a central portion in the x direction of an end portion on the y2 side of the y direction of the third pad portion 310. The third terminal 320 protrudes from the sealing resin 8 to the y2 side in the y direction, bends, and extends to the x1 side in the x direction.

[0028] The third terminal 320 includes a third protruding portion 321, a third straight portion 322, and a third connecting portion 323. The third protruding portion 321 is connected to the third pad portion 310, extends in the y direction y2, and protrudes from the sealing resin 8. The width dimension (dimension in the x direction) of the third protruding portion 321 is smaller than the width dimension (dimension in the x direction) of the third pad portion 310. The third straight portion 322 is a portion that extends straight along the x direction. The third straight portion 322 is entirely exposed from the sealing resin 8. The width dimension (dimension in the y direction) of the third straight portion 322 is the same as the width dimension of the tip portion 121b of the first straight portion 121 of the first terminal 120. The position of the third straight portion 322 in the z direction is the same as the position of the first straight portion 121 of the first terminal 120 in the z direction. That is, the first straight portion 121 of the first terminal 120, the second straight portion 222 of the second terminal 220, and the third straight portion 322 of the third terminal 320 are at the same position in the z direction. The third connecting portion 323 is a portion that connects the third protrusion 321 and the third straight portion 322, and is connected to the third protrusion 321 and the third straight portion 322. The third connecting portion 323 is entirely exposed from the sealing resin 8. The third connecting portion 323 is L-shaped when viewed in the z direction, and includes a portion that extends from the end of the third protrusion 321 on the y2 side in the y direction to the x1 side in the x direction, and a portion that extends from the end of the third straight portion 322 on the x2 side in the x direction to the y2 side in the y direction. In this embodiment, the edge of the third connecting portion 323 on the x-direction x1 side coincides in position in the x-direction with the edge of the base end portion 121a of the first straight portion 121 on the x-direction x1 side (the boundary between the base end portion 121a and the tip end portion 121b). The shape of the third lead 3 is not limited to the above.

[0029] The tip 121b of the first perpendicular portion 121 of the first terminal 120, the second perpendicular portion 222 of the second terminal 220, and the third perpendicular portion 322 of the third terminal 320 have the same shape, are arranged at equal intervals in the y direction, and are at the same position in the z direction and the x direction. These portions are inserted into holes formed in the circuit board when the semiconductor device A10 is mounted on the circuit board.

[0030] An outer plating layer made of, for example, an alloy mainly composed of Sn may be formed on the portions of the first lead 1, the second lead 2, and the third lead 3 exposed from the sealing resin 8. An inner plating layer made of, for example, Ag may be formed on a region of the mounting portion main surface 111 of the first lead 1 to which the semiconductor element 6 is bonded, a region of the second pad portion main surface 211 of the second lead 2 to which the wire 71 is bonded, and a region of the third pad portion main surface 311 of the third lead 3 to which the wire 72 is bonded.

[0031] The semiconductor element 6 is an element that exerts the electrical function of the semiconductor device A10. The type of the semiconductor element 6 is not particularly limited. In this embodiment, the semiconductor element 6 is a transistor such as a metal-oxide-semiconductor field-effect transistor (MOSFET). The semiconductor element 6 includes an element body 60, a first electrode 63, a second electrode 64, and a third electrode 65.

[0032] The element body 60 is a rectangular plate-like shape when viewed in the z direction. The element body 60 is made of a semiconductor material, and in this embodiment, is made of Si (silicon). The material of the element body 60 is not limited, and may be other materials such as SiC (silicon carbide) and GaN (gallium nitride). The element body 60 has an element main surface 61 and an element back surface 62. The element main surface 61 and the element back surface 62 face opposite to each other in the z direction. The element main surface 61 faces the z2 side in the z direction. The element back surface 62 faces the z1 side in the z direction. The second electrode 64 and the third electrode 65 are disposed on the element main surface 61. The first electrode 63 is disposed on the element back surface 62. In this embodiment, the first electrode 63 is a drain electrode, the second electrode 64 is a source electrode, and the third electrode 65 is a gate electrode.

[0033] As shown in FIG. 3, the semiconductor element 6 is mounted on the mounting portion main surface 111 at the center in the y direction, toward the x1 side in the x direction. The semiconductor element 6 is disposed at a position that does not overlap the mounting portion through hole 113 when viewed in the z direction. As shown in FIG. 6 and FIG. 7, the semiconductor element 6 is bonded to the mounting portion main surface 111 via a bonding material 69, with the element back surface 62 facing the mounting portion main surface 111. In this embodiment, the bonding material 69 is a conductive bonding material, for example, solder. The bonding material 69 may be another conductive bonding material such as silver paste and sintered silver bonding material. As a result, the first electrode 63 of the semiconductor element 6 is bonded to the mounting portion main surface 111 by the bonding material 69 and is electrically connected to the first lead 1.

[0034] The wire 71 is joined to the second electrode 64 of the semiconductor element 6 and the second pad portion main surface 211 of the second lead 2. As a result, the second electrode 64 of the semiconductor element 6 is electrically connected to the second lead 2. The wire 72 is joined to the third electrode 65 of the semiconductor element 6 and the third pad portion main surface 311 of the third lead 3. As a result, the third electrode 65 of the semiconductor element 6 is electrically connected to the third lead 3. The material, thickness, and number of the wires 71 and 72 are not limited. In addition, the semiconductor element 6 may be connected to the second lead 2 and the third lead 3 by a conductive connecting member other than the wires 72 and 73 (for example, a metal plate and a metal ribbon). The first terminal 120 of the first lead 1, which is electrically connected to the first electrode 63, functions as the drain terminal of the semiconductor device A10, the second terminal 220 of the second lead 2, which is electrically connected to the second electrode 64, functions as the source terminal of the semiconductor device A10, and the third terminal 320 of the third lead 3, which is electrically connected to the third electrode 65, functions as the gate terminal of the semiconductor device A10. A high voltage is applied from the outside between the first terminal 120 (drain terminal) and the second terminal 220 (source terminal). In addition, the potential difference between the first terminal 120 (drain terminal) and the third terminal 320 (gate terminal) also increases according to the applied high voltage.

[0035] The sealing resin 8 covers parts of the first lead 1, the second lead 2, and the third lead 3, as well as the entire semiconductor element 6 and the wires 71 and 72. The sealing resin 8 is made of, for example, a black epoxy resin. The material of the sealing resin 8 is not limited. The sealing resin 8 is formed by, for example, transfer molding using a mold.

[0036] The sealing resin 8 has a resin main surface 81, a resin back surface 82, a resin end surface 83, a resin first side surface 84, a resin second side surface 85, and a resin third side surface 86. The resin main surface 81 and the resin back surface 82 face opposite each other in the z direction. The resin main surface 81 faces the z direction z2 side, and the resin back surface 82 faces the z direction z1 side. As shown in FIGS. 4, 6, and 7, the mounting portion back surface 112 of the first lead 1 is exposed from the resin back surface 82 over its entirety, and the resin back surface 82 and the mounting portion back surface 112 are flush with each other.

[0037] The resin end surface 83 and the resin first side surface 84 are surfaces connected to the resin main surface 81 and the resin back surface 82, respectively. The resin end surface 83 and the resin first side surface 84 face opposite sides to each other in the x direction. The resin end surface 83 is a surface disposed on the x1 side in the x direction and faces the x1 side in the x direction. The resin first side surface 84 is a surface disposed on the x2 side in the x direction and faces the x2 side in the x direction. The resin second side surface 85 and the resin third side surface 86 are surfaces connected to the resin main surface 81, the resin back surface 82, the resin end surface 83, and the resin first side surface 84, respectively. The resin second side surface 85 and the resin third side surface 86 face opposite sides to each other in the y direction. The resin second side surface 85 is a surface disposed on the y1 side in the y direction and faces the y1 side in the y direction. The resin third side surface 86 is a surface disposed on the y2 side in the y direction and faces the y2 side in the y direction.

[0038] The resin end surface 83, the resin first side surface 84, the resin second side surface 85, and the resin third side surface 86 each have a surface that is connected to the resin main surface 81 and inclined so as to approach each other toward the resin main surface 81. That is, the sealing resin 8 has a tapered shape in which the cross-sectional area in the xy plane of the sealing resin 8 is smaller toward the resin main surface 81. The resin end surface 83, the resin first side surface 84, the resin second side surface 85, and the resin third side surface 86 each have a surface that is connected to the resin back surface 82 and inclined so as to approach each other toward the resin back surface 82. That is, the sealing resin 8 has a tapered shape in which the cross-sectional area in the xy plane of the sealing resin 8 is smaller toward the resin back surface 82. The shapes of the resin end surface 83, the resin first side surface 84, the resin second side surface 85, and the resin third side surface 86 are not limited.

[0039] The resin end surface 83 is a surface from which the first terminal 120 protrudes. That is, the first terminal 120 protrudes from the resin end surface 83. The resin second side surface 85 is a surface from which the second terminal 220 protrudes. That is, the second terminal 220 protrudes from the resin second side surface 85. The resin third side surface 86 is a surface from which the third terminal 320 protrudes. That is, the third terminal 320 protrudes from the resin third side surface 86. As shown in FIGS. 5 to 7, the first perpendicular portion 121 of the first terminal 120, the second terminal 220, and the third terminal 320 are located near the middle of the sealing resin 8 in the z direction (near the middle between the resin main surface 81 and the resin back surface 82). Therefore, the first terminal 120 protrudes from near the middle of the resin end surface 83 in the z direction, the second terminal 220 protrudes from near the middle of the resin second side surface 85 in the z direction, and the third terminal 320 protrudes from near the middle of the resin third side surface 86 in the z direction.

[0040] In this embodiment, the sealing resin 8 includes a resin through hole 88. The resin through hole 88 is a through hole that penetrates parallel to the z direction from the resin main surface 81 to the resin back surface 82. The resin through hole 88 is disposed in the center of the sealing resin 8 in the y direction and toward the x2 side in the x direction (upper side in FIG. 3), and has a circular shape when viewed in the z direction. In this embodiment, the center of the resin through hole 88 is the same as the center of the mounting portion through hole 113. The diameter of the resin through hole 88 is smaller than the diameter of the mounting portion through hole 113. Therefore, as shown in FIGS. 3, 4, 6, and 7, the resin through hole 88 is located inside the mounting portion through hole 113, and the hole wall of the resin through hole 88 is entirely formed by the sealing resin 8. That is, the mounting portion 110 is not exposed from the hole wall of the resin through hole 88. The resin through hole 88 is used to attach a heat dissipation member to the semiconductor device A10 by inserting a fastening member such as a screw therethrough. By connecting the mounting portion back surface 112 to a heat dissipation member via an electrical insulating sheet or the like, heat generated from the semiconductor element 6 is dissipated via the mounting portion 110 and the heat dissipation member.

[0041] Next, the effects of the semiconductor device A10 will be described.

[0042] According to this embodiment, the first lead 1 includes a first terminal 120 protruding from the sealing resin 8. The second lead 2 includes a second terminal 220 protruding from the sealing resin 8. The first terminal 120 protrudes from the resin end face 83, while the second terminal 220 protrudes from the resin second side face 85. The shortest distance (creepage distance) between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 (the resin end face 83 and the resin second side face 85) is larger than when the first terminal 120 and the second terminal 220 protrude from the same resin end face 83. This allows the semiconductor device A10 to suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. The third lead 3 includes a third terminal 320 protruding from the sealing resin 8. The third terminal 320 protrudes from the resin third side face 86. The creepage distance between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 (resin end face 83 and resin third side face 86) is larger than when the first terminal 120 and the third terminal 320 protrude from the same resin end face 83. This allows the semiconductor device A10 to suppress discharge on the surface of the sealing resin 8 even when the potential difference between the first terminal 120 and the third terminal 320 becomes large. As described above, the semiconductor device A10 can achieve a high withstand voltage.

[0043] Moreover, according to this embodiment, the mounting portion back surface 112 is exposed from the resin back surface 82. Therefore, the semiconductor device A10 can dissipate heat emitted by the semiconductor element 6 by connecting a heat dissipation member to the mounting portion back surface 112. Furthermore, the sealing resin 8 has a resin through hole 88 that penetrates parallel to the z direction. Therefore, the semiconductor device A10 can easily attach a heat dissipation member by inserting a fastening member such as a screw through the resin through hole 88. Furthermore, the center of the resin through hole 88 is the same as the center of the mounting portion through hole 113, and the diameter of the resin through hole 88 is smaller than the diameter of the mounting portion through hole 113. Therefore, the resin through hole 88 is located inside the mounting portion through hole 113, and the hole wall of the resin through hole 88 is entirely formed by the sealing resin 8. That is, the mounting portion 110 is not exposed from the hole wall of the resin through hole 88. This insulates the mounting portion 110 from the fastening member. Moreover, according to the present embodiment, the thickness dimension of the mounting portion 110 is greater than the thickness dimensions of the first terminal 120, the second lead 2, and the third lead 3. Therefore, in the semiconductor device A10, the mounting portion 110 can efficiently absorb the heat emitted by the semiconductor element 6.

[0044] In the present embodiment, the mounting portion 110 is provided with the mounting portion through hole 113, and the sealing resin 8 is provided with the resin through hole 88, but this is not limiting. The mounting portion 110 does not have to include the mounting portion through hole 113, and the sealing resin 8 does not have to include the resin through hole 88. The same applies to other embodiments and modified examples described below.

[0045] 8 to 13 show modified examples of the semiconductor device A10 according to the first embodiment. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated explanations will be omitted.

[0046] [First Modification] Fig. 8 and Fig. 9 are diagrams for explaining a semiconductor device A11 according to a first modified example of the first embodiment. Fig. 8 is a bottom view of the semiconductor device A11 and corresponds to Fig. 4. Fig. 9 is a cross-sectional view of the semiconductor device A11 and corresponds to Fig. 6. In the semiconductor device A11, the mounting portion back surface 112 is not exposed from the resin back surface 82 and is covered with the sealing resin 8.

[0047] [Second Modification] Fig. 10 is a cross-sectional view showing a semiconductor device A12 according to a second modified example of the first embodiment, and corresponds to Fig. 6. The semiconductor device A12 differs from the semiconductor device A10 in the position where the first terminal 120 is connected to the mounting portion 110. In the semiconductor device A12, the first terminal 120 is connected to the center of the mounting portion end surface 114 in the y direction and also to the center of the mounting portion end surface 114 in the z direction as shown in Fig. 10.

[0048] [Third Modification] Fig. 11 is a cross-sectional view showing a semiconductor device A13 according to a third modified example of the first embodiment, and corresponds to Fig. 6. The semiconductor device A13 differs from the semiconductor device A10 in the thickness dimension of the mounting portion 110. In the semiconductor device A13, the thickness dimension of the mounting portion 110 is the same as the thickness dimension of the first terminal 120. In this modified example, the position of the mounting portion main surface 111 in the z direction is the same as that of the semiconductor device A10.

[0049] [Fourth Modification] 12 is a cross-sectional view showing a semiconductor device A14 according to a fourth modified example of the first embodiment, and corresponds to FIG. 6. The semiconductor device A14 differs from the semiconductor device A13 in the position of the first lead 1 in the z direction. In the semiconductor device A14, the thickness dimension of the mounting portion 110 is the same as the thickness dimension of the first terminal 120. In addition, the mounting portion back surface 112 is exposed from the resin back surface 82, and the position of the mounting portion main surface 111 in the z direction differs from that of the semiconductor device A13. In the semiconductor device A14, the first terminal back surface 125 is flush with the mounting portion back surface 112 and is exposed from the resin back surface 82.

[0050] [Fifth Modification] FIG. 13 is a plan view showing a semiconductor device A15 according to a fifth modified example of the first embodiment, and corresponds to FIG. 3. In FIG. 13, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. In the semiconductor device A15, the first straight portion 121 of the first terminal 120, the second straight portion 222 of the second terminal 220, and the third straight portion 322 of the third terminal 320 have shapes different from those of the semiconductor device A10. The second straight portion 222 includes a wide portion 222a having a larger width dimension (dimension in the y direction) near a portion connected to the second connecting portion 223. In addition, the third straight portion 322 includes a wide portion 322a having a larger width dimension (dimension in the y direction) near a portion connected to the third connecting portion 323. The wide portion 222a and the wide portion 322a are remaining portions of the tie bars that were connected to the second and third straight portions 222 and 322 in the lead frame. In this modification, the base end portion 121a of the first straight portion 121 extends to the end positions of the wide portion 222a and the wide portion 322a on the x-direction x1 side. According to this modification, when the first straight portion 121, the second straight portion 222, and the third straight portion 322 are inserted into holes formed in a circuit board and the semiconductor device A15 is mounted on the circuit board, the portions of the second connecting portion 223 and the third connecting portion 323 extending in the y direction can be prevented from abutting against the circuit board.

[0051] 14 to 25 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated explanations will be omitted.

[0052] Second Embodiment FIG. 14 is a diagram for explaining a semiconductor device A20 according to a second embodiment of the present disclosure. FIG. 14 is a plan view showing the semiconductor device A20, and is a diagram corresponding to FIG. 3. In FIG. 14, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. The semiconductor device A20 according to this embodiment differs from the semiconductor device A10 according to the first embodiment in the shapes of the first lead 1 and the second lead 2. The configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of each modification of the first embodiment described above may be combined arbitrarily.

[0053] In this embodiment, the second terminal 220 is connected to the mounting portion 110, and the mounting portion 110 and the second terminal 220 constitute the first lead 1. Therefore, the second terminal 220 of the first lead 1 functions as a drain terminal of the semiconductor device A10. The second terminal 220 is connected to an end of the mounting portion end surface 114 on the y-direction y1 side and an end of the mounting portion end surface 114 on the z-direction z2 side. The position of the second terminal 220 is not limited. The second terminal 220 further includes a second connection portion 224. The second connection portion 224 is a portion that connects the second protrusion 221 and the mounting portion 110, and is connected to the second protrusion 221 and the mounting portion 110. The second connection portion 224 is entirely covered with the sealing resin 8, and includes a portion that is inclined with respect to the mounting portion 110 and the second protrusion 221. The second protrusion 221 has a surface facing the same side as the mounting portion main surface 111 (a surface facing the z-direction z2 side) located on the z-direction z2 side with respect to the mounting portion main surface 111. Therefore, the inclined portion of the second connection portion 224 is inclined so that the x-direction x1 side is closer to the z-direction z2 side.

[0054] In this embodiment, the second pad portion 210 is disposed between the second connection portion 224 of the second terminal 220 and the third pad portion 310 in the y direction. The first terminal 120 is connected to the second pad portion 210, and the second pad portion 210 and the first terminal 120 form the second lead 2. The first terminal 120 does not include a first connection portion 122, and the first perpendicular portion 121 is connected to a central portion in the y direction of the end portion on the x1 side in the x direction of the second pad portion 210. Therefore, the first terminal 120 of the second lead 2 functions as a source terminal of the semiconductor device A10.

[0055] According to this embodiment, the first lead 1 includes a second terminal 220 protruding from the sealing resin 8. The second lead 2 includes a first terminal 120 protruding from the sealing resin 8. The first terminal 120 protrudes from the resin end face 83, while the second terminal 220 protrudes from the resin second side face 85. The creeping distance between the first terminal 120 and the second terminal 220 is larger than that in the case where the first terminal 120 and the second terminal 220 protrude from the same resin end face 83. This allows the semiconductor device A20 to suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. Since the third terminal 320 protrudes from the resin third side face 86, the creeping distance between the second terminal 220 and the third terminal 320 is sufficiently large. This allows the semiconductor device A20 to suppress discharge on the surface of the sealing resin 8 even when the potential difference between the second terminal 220 and the third terminal 320 becomes large. As described above, the semiconductor device A20 can withstand a high voltage. Furthermore, the semiconductor device A20 has the same configuration as the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.

[0056] Third Embodiment FIG. 15 is a diagram for explaining a semiconductor device A30 according to a third embodiment of the present disclosure. FIG. 15 is a plan view showing the semiconductor device A30, and is a diagram corresponding to FIG. 3. In FIG. 15, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. The semiconductor device A30 according to this embodiment differs from the semiconductor device A20 according to the second embodiment in the shape of the third terminal 320. The configuration and operation of other parts of this embodiment are similar to those of the second embodiment. Note that the parts of the modified examples of the first and second embodiments may be combined in any desired manner.

[0057] In this embodiment, the third terminal 320 has the same shape as the first terminal 120. The third terminal 320 is connected to a central portion in the y direction of the end portion on the x1 side in the x direction of the third pad portion 310. The third terminal 320 extends in the x direction and protrudes from a resin end surface 83 of the sealing resin 8. The third terminal 320 includes a base end portion 320a and a tip end portion 320b. The base end portion 320a is a portion of the third terminal 320 located on the x2 side in the x direction, and includes a portion covered by the sealing resin 8 and a portion protruding from the sealing resin 8. The tip end portion 320b is a portion of the third terminal 320 located on the x1 side in the x direction, and is connected to the base end portion 320a. The tip end portion 320b is entirely exposed from the sealing resin 8, and has a width dimension (dimension in the y direction) smaller than that of the base end portion 320a.

[0058] In this embodiment, the first terminal 120 of the second lead 2 also protrudes from the resin end surface 83, but the second terminal 220 of the first lead 1 protrudes from the resin second side surface 85. The creeping distance between the first terminal 120 and the second terminal 220 is larger than that in the case where the first terminal 120 and the second terminal 220 protrude from the same resin end surface 83. As a result, the semiconductor device A30 can suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. Since the third terminal 320 also protrudes from the resin end surface 83, the creeping distance between the second terminal 220 and the third terminal 320 is sufficiently large. As a result, the semiconductor device A30 can suppress discharge on the surface of the sealing resin 8 even when the potential difference between the second terminal 220 and the third terminal 320 becomes large. As described above, the semiconductor device A30 can achieve high voltage resistance. Furthermore, the semiconductor device A30 has a configuration in common with the semiconductor device A10, and hence achieves the same effects as the semiconductor device A10.

[0059] [Fourth embodiment] FIG. 16 is a diagram for explaining a semiconductor device A40 according to a fourth embodiment of the present disclosure. FIG. 16 is a plan view showing the semiconductor device A40, and is a diagram corresponding to FIG. 3. In FIG. 16, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. The semiconductor device A40 according to this embodiment differs from the semiconductor device A30 according to the third embodiment in that it further includes a fourth lead 4. The configuration and operation of other parts of this embodiment are similar to those of the third embodiment. Note that the parts of the above first to third embodiments and each modified example may be arbitrarily combined.

[0060] In this embodiment, the semiconductor device A40 further includes a fourth lead 4 and a wire 73. The fourth lead 4 is electrically connected to the semiconductor element 6. The fourth lead 4 is disposed apart from the first lead 1, the second lead 2, and the third lead 3. The fourth lead 4 is disposed on the x-direction x1 side of the mounting portion 110 of the first lead 1, between the second lead 2 and the third lead 3 in the y-direction. The fourth lead 4 is disposed on the z-direction z2 side of the mounting portion 110. The position of the fourth lead 4 in the z-direction is the same as that of the second lead 2 and the third lead 3. The fourth lead 4 has the same shape as the third lead 3. The fourth lead 4 includes a fourth pad portion 410 and a fourth terminal 420.

[0061] The fourth pad portion 410 is a portion to which the wire 73 is bonded, and has a generally rectangular shape that is long in the y direction when viewed in the z direction. The fourth pad portion 410 has a fourth pad portion main surface 411. The fourth pad portion main surface 411 faces the z direction z2 side, and the wire 73 is bonded to it. The material, thickness, and number of the wires 73 are not limited. The fourth pad portion 410 is entirely covered with sealing resin 8.

[0062] The fourth terminal 420 is connected to the fourth pad portion 410 and is electrically connected to the second electrode 64 (source electrode) of the semiconductor element 6 via the fourth pad portion 410 and the wire 73. The fourth terminal 420 functions as a source sense terminal of the semiconductor device A40. The width dimension (dimension in the y direction) of the fourth terminal 420 is smaller than the width dimension (dimension in the y direction) of the fourth pad portion 410. The thickness dimension (dimension in the z direction) of the fourth terminal 420 is the same as the thickness dimension (dimension in the z direction) of the fourth pad portion 410 and is the same as the thickness dimension of the first terminal 120. The fourth terminal 420 is connected to the center part in the y direction of the end portion on the x1 side in the x direction of the fourth pad portion 410. The position of the fourth terminal 420 is not limited. The fourth terminal 420 extends in the x direction and includes a portion protruding from the sealing resin 8. The fourth terminal 420 includes a base end portion 420a and a tip end portion 420b. The base end 420a is a portion of the fourth terminal 420 located on the x2 side in the x-direction, and includes a portion covered with the sealing resin 8 and a portion protruding from the sealing resin 8. The tip end 420b is a portion of the fourth terminal 420 located on the x1 side in the x-direction, and is connected to the base end 420a. The tip end 420b is entirely exposed from the sealing resin 8, and has a width dimension (dimension in the y direction) smaller than that of the base end 420a. The shape of the fourth lead 4 is not limited to that described above.

[0063] In this embodiment, the first terminal 120 of the second lead 2 also protrudes from the resin end surface 83, but the second terminal 220 of the first lead 1 protrudes from the resin second side surface 85. The creeping distance between the first terminal 120 and the second terminal 220 is larger than that in the case where the first terminal 120 and the second terminal 220 protrude from the same resin end surface 83. As a result, the semiconductor device A40 can suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. Since the third terminal 320 and the fourth terminal 420 also protrude from the resin end surface 83, the creeping distance between the second terminal 220 and the third terminal 320 and the fourth terminal 420 is sufficiently large. As a result, the semiconductor device A40 can suppress discharge on the surface of the sealing resin 8 even when the potential difference between the second terminal 220 and the third terminal 320 and the fourth terminal 420 becomes large. As described above, the semiconductor device A40 can achieve a high withstand voltage. Furthermore, the semiconductor device A40 has a common configuration with the semiconductor device A10 and therefore provides the same effects as the semiconductor device A10.

[0064] In the present embodiment, the case has been described in which the second terminal 220 is connected to the mounting portion 110 to form the first lead 1, and the first terminal 120 is connected to the second pad portion 210 to form the second lead 2, but this is not limiting. For example, as in the first embodiment, the first terminal 120 may be connected to the mounting portion 110 to form the first lead 1, and the second terminal 220 may be connected to the second pad portion 210 to form the second lead 2.

[0065] Fifth embodiment FIG. 17 is a diagram for explaining a semiconductor device A50 according to a fifth embodiment of the present disclosure. FIG. 17 is a plan view showing the semiconductor device A50, and is a diagram corresponding to FIG. 3. In FIG. 17, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. The semiconductor device A50 according to this embodiment differs from the semiconductor device A10 according to the first embodiment in that the type of the semiconductor element 6 is different and that the second lead 2 is not provided. The configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the above first to fourth embodiments and each modified example may be arbitrarily combined.

[0066] In this embodiment, the semiconductor element 6 is a diode. The semiconductor element 6 does not have a third electrode 65 on the element main surface 61. In this embodiment, the first electrode 63 is a cathode electrode, and the second electrode 64 is an anode electrode. In addition, in this embodiment, the semiconductor device A50 does not have a second lead 2. The first terminal 120 is connected to the end of the mounting portion end surface 114 on the y-direction y2 side. The first electrode 63 of the semiconductor element 6 is bonded to the mounting portion main surface 111 by a bonding material 69 and is electrically connected to the first lead 1. The wire 71 is bonded to the second electrode 64 of the semiconductor element 6 and the second pad portion main surface 211 of the second lead 2. As a result, the second electrode 64 of the semiconductor element 6 is electrically connected to the second lead 2. The first terminal 120 of the first lead 1, which is connected to the first electrode 63, functions as a cathode terminal of the semiconductor device A50, and the second terminal 220 of the second lead 2, which is connected to the second electrode 64, functions as an anode terminal of the semiconductor device A50.

[0067] In this embodiment, the first lead 1 also includes a first terminal 120 protruding from the sealing resin 8. The second lead 2 also includes a second terminal 220 protruding from the sealing resin 8. The first terminal 120 protrudes from the resin end surface 83, while the second terminal 220 protrudes from the resin second side surface 85. The creepage distance between the first terminal 120 and the second terminal 220 is larger than that in the case where the first terminal 120 and the second terminal 220 protrude from the same resin end surface 83. As a result, the semiconductor device A50 can suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220, so that a high voltage resistance can be achieved. The semiconductor device A50 has a common configuration with the semiconductor device A10, and thus has the same effect as the semiconductor device A10.

[0068] In the present embodiment, the case has been described in which the first terminal 120 is connected to the mounting portion 110 to form the first lead 1, and the second terminal 220 is connected to the second pad portion 210 to form the second lead 2, but this is not limiting. For example, as in the second embodiment, the second terminal 220 may be connected to the mounting portion 110 to form the first lead 1, and the first terminal 120 may be connected to the second pad portion 210 to form the second lead 2.

[0069] Sixth Embodiment 18 to 20 are diagrams for explaining the semiconductor device A60 according to the sixth embodiment of the present disclosure. FIG. 18 is a perspective view showing the semiconductor device A60, and corresponds to FIG. 1. FIG. 19 is a plan view showing the semiconductor device A60, and corresponds to FIG. 3. In FIG. 19, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. FIG. 20 is a left side view showing the semiconductor device A60, and corresponds to FIG. 5. In the semiconductor device A60 according to this embodiment, the shapes of the second terminal 220 of the second lead 2 and the third terminal 320 of the third lead 3 are different from those of the semiconductor device A10 according to the first embodiment. The configuration and operation of the other parts of this embodiment are the same as those of the first embodiment. Note that the parts of the first to fifth embodiments and the modified examples may be combined arbitrarily.

[0070] In this embodiment, the second terminal 220 has a shape in which a part of the second terminal 220 according to the first embodiment is bent toward the z-direction z2 side. Specifically, the vicinity of the part of the second protruding portion 221 connected to the second pad portion 210 and the vicinity of the part connected to the second perpendicular portion 222 of the second connecting portion 223 are bent at approximately 90°. As a result, the second protruding portion 221 extends toward the z-direction z2 side and protrudes from the resin main surface 81. The shape of the second terminal 220 is not limited. For example, the bending angle may be an angle smaller than 90° or an angle larger than 90°. In the second terminal 220, it is sufficient that the second protruding portion 221 protrudes from the resin main surface 81 and the second perpendicular portion 222 extends straight along the x-direction.

[0071] In this embodiment, the third terminal 320 is also similar to the second terminal 220, and has a shape in which a part of the third terminal 320 according to the first embodiment is bent toward the z-direction z2 side. Specifically, the vicinity of the part of the third protruding portion 321 connected to the third pad portion 310 and the vicinity of the part of the third connecting portion 323 connected to the third straight portion 322 are bent at approximately 90°. As a result, the third protruding portion 321 extends toward the z-direction z2 side and protrudes from the resin main surface 81. The shape of the third terminal 320 is not limited. For example, the bending angle may be an angle smaller than 90° or an angle larger than 90°. The third terminal 320 may have only to have the third protruding portion 321 protruding from the resin main surface 81 and the third straight portion 322 extending straight along the x-direction.

[0072] According to this embodiment, the first terminal 120 protrudes from the resin end surface 83, but the second terminal 220 protrudes from the resin main surface 81. The creeping distance between the first terminal 120 and the second terminal 220 is larger than that when the first terminal 120 and the second terminal 220 protrude from the same resin end surface 83. As a result, the semiconductor device A60 can suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. In addition, since the third terminal 320 protrudes from the resin main surface 81, the creeping distance between the first terminal 120 and the third terminal 320 is larger than that when the first terminal 120 and the third terminal 320 protrude from the same resin end surface 83. As a result, the semiconductor device A60 can suppress discharge on the surface of the sealing resin 8 even when the potential difference between the first terminal 120 and the third terminal 320 becomes large. As described above, the semiconductor device A60 can achieve a high withstand voltage. Furthermore, the semiconductor device A60 has a common configuration with the semiconductor device A10 and therefore provides the same effects as the semiconductor device A10.

[0073] In the present embodiment, the second terminal 220 and the third terminal 320 protrude from the resin main surface 81, but this is not limiting. The second terminal 220 and the third terminal 320 may both protrude from the resin back surface 82, or one may protrude from the resin main surface 81 and the other may protrude from the resin back surface 82.

[0074] As will be understood from the first and sixth embodiments, the surface of the sealing resin 8 from which the second terminal 220 and the third terminal 320 protrude is not limited. It is sufficient that at least one of the second terminal 220 and the third terminal 320 protrudes from a surface other than the resin end surface 83.

[0075] Seventh embodiment 21 and 22 are diagrams for explaining a semiconductor device A70 according to a seventh embodiment of the present disclosure. FIG. 21 is a perspective view showing the semiconductor device A70, and corresponds to FIG. 1. FIG. 22 is a plan view showing the semiconductor device A70, and corresponds to FIG. 3. In FIG. 22, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. In the semiconductor device A70 according to this embodiment, the shapes of the second terminal 220 of the second lead 2 and the third terminal 320 of the third lead 3 are different from those of the semiconductor device A10 according to the first embodiment. The configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the first to sixth embodiments and the modified examples may be combined arbitrarily.

[0076] In this embodiment, the second terminal 220 has a shape in which a part of the second terminal 220 according to the first embodiment is bent toward the z-direction z2 side. Specifically, the vicinity of the part of the second protruding portion 221 connected to the second connecting portion 223 and the part of the second connecting portion 223 extending in the y direction are bent at approximately 90°. In this embodiment, the second protruding portion 221 is bent at a position on the y-direction y1 side from the sixth embodiment. As a result, the second protruding portion 221 protrudes from the second resin side surface 85 and is bent on the y-direction y1 side from the protruding position. The shape of the second terminal 220 is not limited. For example, the bending angle may be an angle smaller than 90° or an angle larger than 90°. In this embodiment, the second terminal 220 has the second protruding portion 221 protruding from the second resin side surface 85 and the second perpendicular portion 222 extending straight along the x direction, similar to the first embodiment.

[0077] In this embodiment, the third terminal 320 is also similar to the second terminal 220, and has a shape in which a part of the third terminal 320 according to the first embodiment is bent toward the z-direction z2 side. Specifically, the vicinity of the part of the third protruding portion 321 connected to the third connecting portion 323 and the part of the third connecting portion 323 extending in the y direction are bent at approximately 90°. In this embodiment, the third protruding portion 321 is bent at a position on the y-direction y2 side from the sixth embodiment. As a result, the third protruding portion 321 protrudes from the resin third side surface 86 and is bent on the y-direction y2 side from the protruding position. The shape of the third terminal 320 is not limited. For example, the bending angle may be an angle smaller than 90° or an angle larger than 90°. In this embodiment, the third terminal 320 has the third protruding portion 321 protruding from the resin third side surface 86 and the third perpendicular portion 322 extending straight along the x direction, similar to the first embodiment.

[0078] In this embodiment, the first terminal 120 protrudes from the resin end surface 83, but the second terminal 220 protrudes from the resin second side surface 85. The creeping distance between the first terminal 120 and the second terminal 220 is larger than that when the first terminal 120 and the second terminal 220 protrude from the same resin end surface 83. As a result, the semiconductor device A70 can suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. In addition, since the third terminal 320 protrudes from the resin third side surface 86, the creeping distance between the first terminal 120 and the third terminal 320 is larger than that when the first terminal 120 and the third terminal 320 protrude from the same resin end surface 83. As a result, the semiconductor device A70 can suppress discharge on the surface of the sealing resin 8 even when the potential difference between the first terminal 120 and the third terminal 320 becomes large. As described above, the semiconductor device A70 can achieve high voltage resistance. Moreover, the semiconductor device A70 has the same configuration as the semiconductor device A10, and thus has the same effects as the semiconductor device A10. Furthermore, the second terminal 220 and the third terminal 320 are bent toward the z-direction z2 after being exposed from the sealing resin 8. Therefore, the semiconductor device A70 can have a smaller dimension in the y-direction than the semiconductor device A10 according to the first embodiment.

[0079] In the present embodiment, the second terminal 220 and the third terminal 320 are bent in the z direction z2, but this is not limiting. The second terminal 220 and the third terminal 320 may both be bent in the z direction z1, or one may be bent in the z direction z1 and the other may be bent in the z direction z2.

[0080] Eighth embodiment 23-24 are diagrams for explaining a semiconductor device A80 according to an eighth embodiment of the present disclosure. FIG. 23 is a perspective view showing the semiconductor device A80, and corresponds to FIG. 1. FIG. 24 is a cross-sectional view showing the semiconductor device A80, and corresponds to FIG. 7. The semiconductor device A80 according to this embodiment differs from the semiconductor device A10 according to the first embodiment in the shapes of the second lead 2 and the third lead 3. The configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the above first to seventh embodiments and each modified example may be combined in any manner.

[0081] In this embodiment, the second pad portion 210 of the second lead 2 is disposed so that the second pad portion main surface 211 is at the same position as the mounting portion main surface 111 in the z direction. The portion of the second connecting portion 223 of the second terminal 220 extending in the x direction is inclined with respect to the second protruding portion 221 and the second perpendicular portion 222. The inclined portion is inclined so that the x direction x1 side is closer to the z direction z2 side. The third pad portion 310 of the third lead 3 is disposed so that the third pad portion main surface 311 is at the same position as the mounting portion main surface 111 in the z direction. The portion of the third connecting portion 323 of the third terminal 320 extending in the x direction is inclined with respect to the third protruding portion 321 and the third perpendicular portion 322. The inclined portion is inclined so that the x direction x1 side is closer to the z direction z2 side.

[0082] In this embodiment, the first terminal 120 protrudes from the resin end surface 83, but the second terminal 220 protrudes from the resin second side surface 85. The creeping distance between the first terminal 120 and the second terminal 220 is larger than that when the first terminal 120 and the second terminal 220 protrude from the same resin end surface 83. As a result, the semiconductor device A80 can suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. In addition, since the third terminal 320 protrudes from the resin third side surface 86, the creeping distance between the first terminal 120 and the third terminal 320 is larger than that when the first terminal 120 and the third terminal 320 protrude from the same resin end surface 83. As a result, the semiconductor device A80 can suppress discharge on the surface of the sealing resin 8 even when the potential difference between the first terminal 120 and the third terminal 320 becomes large. As described above, the semiconductor device A80 can achieve high voltage resistance. Moreover, the semiconductor device A80 has a configuration in common with the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10. Furthermore, in the semiconductor device A80, the second pad portion 210 and the third pad portion 310 are located on the z-direction z1 side, so that the height of the wires 71 and 72 can be reduced compared to the first embodiment.

[0083] Ninth embodiment FIG. 25 is a diagram for explaining a semiconductor device A90 according to a ninth embodiment of the present disclosure. FIG. 25 is a plan view showing the semiconductor device A90, and is a diagram corresponding to FIG. 3. In FIG. 25, for ease of understanding, the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. In the semiconductor device A90 according to this embodiment, the shape of the third lead 3 is different from that of the semiconductor device A10 according to the first embodiment. The configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the above first to eighth embodiments and each modified example may be arbitrarily combined.

[0084] In this embodiment, the third terminal 320 of the third lead 3 is connected to a central portion in the y direction of the end portion on the x1 side in the x direction of the third pad portion 310. The third terminal 320 extends in the x direction and protrudes from a resin end surface 83 of the sealing resin 8. The third terminal 320 includes a base end portion 320a and a tip end portion 320b. The base end portion 320a is a portion of the third terminal 320 located on the x2 side in the x direction, and includes a portion covered by the sealing resin 8 and a portion protruding from the sealing resin 8. The tip end portion 320b is a portion of the third terminal 320 located on the x1 side in the x direction, and is connected to the base end portion 320a. The tip end portion 320b is entirely exposed from the sealing resin 8, and has a width dimension (dimension in the y direction) smaller than that of the base end portion 320a.

[0085] In this embodiment, the first lead 1 also includes a first terminal 120 protruding from the sealing resin 8. The second lead 2 also includes a second terminal 220 protruding from the sealing resin 8. The first terminal 120 protrudes from the resin end surface 83, while the second terminal 220 protrudes from the resin second side surface 85. The creepage distance between the first terminal 120 and the second terminal 220 is larger than that in the case where the first terminal 120 and the second terminal 220 protrude from the same resin end surface 83. As a result, the semiconductor device A90 can suppress discharge on the surface of the sealing resin 8 even when a high voltage is applied between the first terminal 120 and the second terminal 220. Therefore, the semiconductor device A90 can achieve a high voltage resistance. The semiconductor device A90 has a common configuration with the semiconductor device A10, and thus has the same effect as the semiconductor device A10.

[0086] In the above first to ninth embodiments, the semiconductor element 6 is a transistor or a diode, but this is not limited thereto. The type of the semiconductor element 6 is not limited, and it may be another semiconductor element such as an integrated circuit. In the above first to eighth embodiments, the case where two to four terminals are arranged is described, but this is not limited thereto. The number of terminals arranged is not limited, and is appropriately set according to the number and arrangement of electrodes arranged on the element main surface 61 of the semiconductor element 6.

[0087] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.

[0088] [Appendix 1] A semiconductor element (6); A conductive member (5) that is electrically connected to the semiconductor element; A sealing resin (8) that covers the semiconductor element; Equipped with The conductive member is The semiconductor device includes a mounting portion (110) on which the semiconductor element is mounted, a first terminal (120) and a second terminal (220), The sealing resin is a resin first surface (83) that faces a first direction (x direction) perpendicular to a thickness direction (z direction) of the mounting portion and from which the first terminal protrudes; a resin second surface (85, 81) facing in a direction different from the resin first surface and from which the second terminal protrudes; Equipped with The first terminal extends in the first direction, The second terminal includes a protruding portion (221) protruding from the second resin surface, a straight portion (222) extending in the first direction, and a connecting portion (223) connecting the protruding portion and the straight portion. Semiconductor device. [Appendix 2, First Embodiment] The mounting portion and the first terminal are connected to each other. 2. The semiconductor device according to claim 1. (Appendix 3, Second to Fourth Embodiments, Figs. 14 to 16) The mounting portion and the second terminal are connected to each other. 2. The semiconductor device according to claim 1. [Appendix 4, 1st to 5th and 7th embodiments] The second resin surface faces a second direction (y direction) perpendicular to the thickness direction and the first direction. 4. The semiconductor device according to claim 1, (Appendix 5, Sixth embodiment, Figs. 18 to 20) The second resin surface faces the thickness direction. 4. The semiconductor device according to claim 1, [Appendix 6] The conductive member further includes a third terminal (320). 6. The semiconductor device according to claim 1, [Appendix 7, 1st to 2nd and 7th embodiments] The sealing resin further includes a resin third surface (86, 82) facing the opposite side to the resin second surface, the third terminal protrudes from the third resin surface; 7. The semiconductor device according to claim 6. (Appendix 8, Third and Fourth Embodiments, Figs. 15 and 16) the third terminal protrudes from the first resin surface; 7. The semiconductor device according to claim 6. (Appendix 9, Sixth embodiment, Figs. 18 to 20) The third terminal protrudes from the second resin surface. 7. The semiconductor device according to claim 6. [Appendix 10] The third terminal includes a third perpendicular portion (322) extending in the first direction. 10. The semiconductor device according to any one of claims 6 to 9. [Appendix 11, Fourth embodiment, FIG. 16] The conductive member further includes a fourth terminal (420) having a portion extending in the first direction. 11. The semiconductor device according to any one of claims 6 to 10. [Appendix 12] the mounting portion includes a mounting portion main surface (111) to which the semiconductor element is bonded, and a mounting portion back surface (112) facing the opposite side to the mounting portion main surface in the thickness direction, The rear surface of the mounting portion is exposed from the sealing resin. 12. The semiconductor device according to any one of claims 1 to 11. [Appendix 13] a dimension of the mounting portion in the thickness direction is larger than a dimension of the first terminal in the thickness direction; 13. The semiconductor device according to any one of claims 1 to 12. [Appendix 14] The semiconductor element (6) is The semiconductor device comprises a main surface (61) and a back surface (62) of an element facing in opposite directions in the thickness direction, a first electrode (63) arranged on the back surface of the element, and a second electrode (64) arranged on the main surface of the element, The first electrode is bonded to the mounting portion. 14. The semiconductor device according to any one of claims 1 to 13. [Appendix 15] The semiconductor element further includes a third electrode (65) disposed on the element main surface. 15. The semiconductor device according to claim 14. [Explanation of symbols]

[0089] A10 to A15, A20, A30, A40, A50, A60, A70: Semiconductor device 5: Conductive support member 1: First lead 110: Mounting section 111: Main surface of mounting part 112: Back side of mounting part 113: Mounting hole 114: Mounting end face 120: 1st terminal 121: 1st direct part 121a: Proximal end 121b:Tip 122: First connection part 2: 2nd lead 210: Second pad section 211: Main surface of second pad 212: Back side of second pad 220: 2nd terminal 221:Second protrusion 222: 2nd direct part 222a: Wide section 223:Second connection part 224: Second connection part 3: Third lead 310: Third pad section 311: Main surface of third pad 312: Back side of the third pad 320: 3rd terminal 321: Third protrusion 322: 3rd direct part 322a: Wide section 323:Third connection part 320a: Proximal end 320b:Tip 4: 4th lead 410: 4th pad section 411: Main surface of fourth pad 420: 4th terminal 420a: Proximal end 420b:Tip 6: Semiconductor elements 60: Element body 61: Element main surface 62: Back side of element 63: 1st electrode 64: 2nd electrode 65: 3rd electrode 69: Bonding material 71, 72, 73: Wire 8: Sealing resin 81: Resin main surface 82: Resin back 83:Resin end face 84: Resin first side 85: Resin second side 86: Resin third side 88: Resin through hole

Claims

1. A semiconductor element; A conductive member that is electrically connected to the semiconductor element; A sealing resin that covers the semiconductor element; Equipped with The conductive member is a mounting portion on which the semiconductor element is mounted, a first terminal, and a second terminal; The sealing resin is a resin first surface that faces a first direction perpendicular to a thickness direction of the mounting portion and from which the first terminal protrudes; a resin second surface that faces a direction different from the resin first surface and from which the second terminal protrudes; Equipped with The first terminal extends in the first direction, The second terminal includes a protruding portion protruding from the second resin surface, a straight portion extending in the first direction, and a connecting portion connecting the protruding portion and the straight portion. Semiconductor device.

2. The mounting portion and the first terminal are connected to each other. The semiconductor device according to claim 1 .

3. The mounting portion and the second terminal are connected to each other. The semiconductor device according to claim 1 .

4. The second resin surface faces a second direction perpendicular to the thickness direction and the first direction.

4. The semiconductor device according to claim 1.

5. The second resin surface faces the thickness direction.

4. The semiconductor device according to claim 1.

6. The conductive member further includes a third terminal.

6. The semiconductor device according to claim 1.

7. the sealing resin further includes a resin third surface facing an opposite side to the resin second surface, The third terminal protrudes from the third resin surface. The semiconductor device according to claim 6.

8. The third terminal protrudes from the first resin surface. The semiconductor device according to claim 6.

9. The third terminal protrudes from the second surface of the resin. The semiconductor device according to claim 6.

10. The third terminal includes a third perpendicular portion extending in the first direction.

10. The semiconductor device according to claim 6.

11. The conductive member further includes a fourth terminal having a portion extending in the first direction.

11. The semiconductor device according to claim 6.

12. the mounting portion includes a main surface to which the semiconductor element is bonded and a back surface facing the opposite side to the main surface in the thickness direction, The rear surface of the mounting portion is exposed from the sealing resin.

12. The semiconductor device according to claim 1.

13. a dimension of the mounting portion in the thickness direction is larger than a dimension of the first terminal in the thickness direction; 13. The semiconductor device according to claim 1.

14. The semiconductor device is a main surface and a back surface of an element facing in opposite directions in the thickness direction, a first electrode disposed on the back surface of the element, and a second electrode disposed on the main surface of the element, The first electrode is bonded to the mounting portion.

14. The semiconductor device according to claim 1.

15. The semiconductor element further includes a third electrode disposed on the element main surface. The semiconductor device according to claim 14.

Images