Light-emitting device

Abstract

To provide a light-emitting device having a high luminance region and a low luminance region into a light-emitting surface.SOLUTION: A light-emitting device includes a plate-like translucent member having a light-emitting element, a lower surface which is disposed on the light-emitting element and light emitted from the light-emitting element enters, and an upper surface on the side opposite to the lower surface, where the upper surface of the translucent member is a light-emitting surface. The translucent member includes: a first translucent part that contains a first sinter body containing a phosphor particle; and a second translucent part that contains a second sinter body containing a light diffusion particle. A relative density of the second sinter body is 70% or more and 95% or less. The light-emitting surface includes: (i) a first light-emitting region where the light is emitted via the first translucent part; and (ii) a second light-emitting region where the light is emitted via the second translucent part, and which has luminance lower than that of the first light-emitting region.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to light emitting devices. [Background technology]

[0002] In recent years, LEDs have been used as light sources for vehicle lighting such as headlights. For example, Patent Document 1 discloses a light emitting device that has a light distribution suitable for a headlight by combining a plurality of light emitting elements with different light emitting areas. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-266434 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a light emitting device having a high luminance region and a low luminance region within its light emitting surface. [Means for solving the problem]

[0005] A light emitting device according to an embodiment of the present disclosure includes: A light-emitting element; a plate-shaped light-transmitting member disposed on the light-emitting element and having a lower surface onto which light emitted from the light-emitting element is incident and an upper surface opposite to the lower surface; having A light-emitting device having an upper surface of the light-transmitting member as a light-emitting surface, The light-transmitting member is A first light transmitting portion including a first sintered body containing phosphor particles and a second light transmitting portion including a second sintered body containing light diffusing particles, The second sintered body has a relative density of 70% or more and 95% or less, The light emitting surface is (i) a first light-emitting region from which light is emitted through the first light-transmitting portion; (ii) a second light-emitting region in which light is emitted through a second light-transmitting portion and has a lower brightness than the first light-emitting region; has.

[0006] A method for manufacturing a light emitting device according to an embodiment of the present disclosure includes: preparing a light emitting element having an upper surface as a light emitting surface; preparing a light-transmitting member including a first light-transmitting portion having a first light incident surface and a first light exit surface, and a second light-transmitting portion having a second light incident surface and a second light exit surface and having a lower light transmittance than the first light-transmitting member; disposing the light-transmitting member on the light-emitting element such that the first light incident surface and the second light incident surface face a light exit surface of the light-emitting element; Includes. Effect of the Invention

[0007] According to the embodiments of the present disclosure, it is possible to provide a light emitting device having a high luminance region and a low luminance region within its light emitting surface. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view showing a schematic view of a light emitting device according to a first embodiment. [Diagram 2] FIG. 1 is a plan view illustrating a light emitting device according to a first embodiment. [Diagram 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 2 is a plan view illustrating an example of a process in a method for manufacturing the light emitting device according to the first embodiment. [Diagram 5] 5 is a cross-sectional view taken along line VV in FIG. 4. [Figure 6] FIG. 2 is a plan view illustrating an example of a process in a method for manufacturing the light emitting device according to the first embodiment. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] 3 is a cross-sectional view illustrating an example of a press used in the method for producing the light emitting device according to the first embodiment. FIG. [Figure 9] FIG. 9 is a cross-sectional view showing a schematic diagram of a member pressure-sintered by the press of FIG. [Figure 10] FIG. 2 is a plan view illustrating an example of a process in a method for manufacturing the light emitting device according to the first embodiment. [Figure 11] 11 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] 1 is a cross-sectional view that typically illustrates a light-transmitting member 10 manufactured in a manufacturing method for a light-emitting device according to Embodiment 1. FIG. [Figure 13] 1 is a cross-sectional view illustrating a schematic example of one step in a method for manufacturing the light emitting device according to Embodiment 1. FIG. [Figure 14] 1 is a cross-sectional view illustrating a schematic example of one step in a method for manufacturing the light emitting device according to Embodiment 1. FIG. [Figure 15] 1 is a cross-sectional view illustrating a schematic example of one step in a method for manufacturing the light emitting device according to Embodiment 1. FIG. [Figure 16] 1 is a cross-sectional view illustrating a schematic example of one step in a method for manufacturing the light emitting device according to Embodiment 1. FIG. [Figure 17] 1 is a cross-sectional view that illustrates a schematic view of a light-transmissive member 10-1 of a light-emitting device according to a first modified example of the first embodiment. [Figure 18] 10 is a cross-sectional view that illustrates a schematic view of a light-transmissive member 10-3 of a light-emitting device according to a second modification of the first embodiment. FIG. [Figure 19] 10 is a cross-sectional view that illustrates a schematic view of a light-transmissive member 10-4 of a light-emitting device according to a third modified example of the first embodiment. FIG. [Figure 20] 13 is a plan view that illustrates a schematic diagram of a light-transmissive member 10-5 of a light-emitting device according to Modification 4 of Embodiment 1. FIG. [Figure 21] 13 is a plan view that illustrates a schematic diagram of a light-transmissive member 10-6 of a light-emitting device according to a fifth modified example of the first embodiment. FIG. [Figure 22] 13 is a plan view diagrammatically illustrating a light-transmissive member 10-7 of a light-emitting device according to a sixth modified example of the first embodiment. FIG. [Figure 23] 13 is a plan view that illustrates a schematic diagram of a light-transmissive member 10-10 of a light-emitting device according to a seventh modified example of the first embodiment. FIG. [Figure 24]FIG. 11 is a perspective view illustrating a light emitting device according to a second embodiment. [Diagram 25] FIG. 11 is a plan view illustrating a light emitting device according to a second embodiment. [Figure 26] 225. A cross-sectional view taken along line XXVI-XXVI of FIG. [Figure 27] 1 is a plan view diagrammatically illustrating a light emitting element 2 of a light emitting device according to a second embodiment. [Figure 28] 10 is a plan view showing a schematic diagram of a wiring substrate 50 of a light emitting device according to a second embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The embodiment will be described below with reference to the drawings. However, the following embodiments are illustrative of a light-emitting device and a method for manufacturing a light-emitting device for embodying the technical idea of ​​the present embodiment, and are not limited to the following. Furthermore, the dimensions, materials, shapes, and relative positions of the components described in the embodiments are merely illustrative, and are not intended to limit the scope of the present invention, unless otherwise specified. The size and positional relationship of the components shown in each drawing may be exaggerated or simplified to clarify the explanation. In addition, in order to avoid the drawings becoming excessively complicated, some elements may be omitted from the illustration, or an end view showing only the cut surface may be used as a cross-sectional view. Furthermore, "covering" is not limited to direct contact, but also includes indirect covering, for example, through other members. Furthermore, "disposing" is not limited to direct contact, but also includes indirect disposing, for example, through other members. In this specification, "plan view" means a drawing from the light-emitting surface side of the light-emitting device.

[0010] The light emitting device according to the embodiment of the present disclosure includes: A light-emitting element; The light-emitting device has a plate-shaped light-transmitting member that is arranged on a light-emitting element and has a lower surface onto which light emitted from the light-emitting element is incident and an upper surface opposite the lower surface, with the upper surface of the light-transmitting member being the light-emitting surface. The light-transmitting member is A first light transmitting portion including a first sintered body containing phosphor particles and a second light transmitting portion including a second sintered body containing light diffusing particles, The relative density of the second sintered body is 70% or more and 95% or less, The light-emitting surface is (i) a first light-emitting region from which light is emitted through the first light-transmitting portion; (ii) a second light-emitting region in which light is emitted through a second light-transmitting portion and has a lower brightness than the first light-emitting region; has. Here, the relative density of a sintered body is the ratio of the actual density of the sintered body to the theoretical density of the sintered body, and is used in this specification as an index showing the proportion of voids contained in the sintered body. In this specification, unless otherwise specified, the upper surface refers to the light emitting surface of the light emitting device (that is, the surface from which main light is emitted), and the lower surface refers to the surface opposite to the upper surface.

[0011] Hereinafter, an embodiment will be described while illustrating a specific configuration of the light emitting device according to the present disclosure.

[0012] [Embodiment 1] Fig. 1 is a perspective view of the light emitting device according to embodiment 1. Fig. 2 is a plan view of the light emitting device according to embodiment 1 as viewed from above. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 2. As shown in Figs. 1 to 3, the light emitting device 100 according to the first embodiment includes a wiring board 40, a light emitting element 1 arranged on the wiring board 40, and a light-transmitting member 10 arranged on the light emitting element 1. The light emitting device 100 may further include a covering member 60, an electronic component 30, and the like. The light emitting device 100 may further include a protective film such as an anti-reflection film 70 that covers the light emitting surface (i.e., the upper surface of the light-transmitting member 10). The light-transmitting member 10 is a plate-like member having a lower surface and an upper surface opposite to the lower surface, and is arranged on the light emitting element 1 so that the lower surface faces the light emission surface 1a of the light emitting element. In the light emitting device of the first embodiment, the lower surface of the light-transmitting member 10 is bonded to the light emission surface 1a of the light emitting element by a light-transmitting bonding member 17. The side surface of the light-transmitting member 10 is covered by the covering member 60. In the light emitting device 100, the covering member 60 may further cover the side surface of the light emitting element 1.

[0013] In the light emitting device 100 of the first embodiment, the light transmissive member 10 includes a first light transmissive portion 11 including phosphor particles and a second light transmissive portion 12 including light diffusing particles, and the upper and lower surfaces of the light transmissive member 10 include the first light transmissive portion 11 and the second light transmissive portion 12. That is, the upper surface of the light transmissive member 10 includes the upper surface of the first light transmissive portion 11 (hereinafter, sometimes referred to as the first upper surface) and the upper surface of the second light transmissive portion 12 (hereinafter, sometimes referred to as the second upper surface), and the lower surface of the light transmissive member 10 includes the lower surface of the first light transmissive portion 11 (hereinafter, sometimes referred to as the first lower surface) and the lower surface of the second light transmissive portion 12 (hereinafter, sometimes referred to as the second lower surface). The light transmissive member 10 is disposed on the light emitting element 1 so that the first lower surface and the second lower surface face the light emitting surface 1a of the light emitting element 1, respectively. The light emitted from the light-emitting element 1 is incident on the first light-transmitting portion 11 and the second light-transmitting portion 12 from the first and second lower surfaces. The upper surface of the light-transmitting member 10 is the light-emitting surface of the light-emitting device 100. The light-emitting region R of the light-emitting device 100 is approximately the same as the upper surface of the light-transmitting member 10. The light-emitting surface of the light-emitting device 100 has a first light-emitting region R1 and a second light-emitting region R2 having a lower brightness than the first light-emitting region R1. In the light-emitting device 100, the first upper surface is the first light-emitting region R1 and the second upper surface is the second light-emitting region R2. In the light-emitting device 100, a first light is emitted from the first light-emitting region R1 through the first light-transmitting portion 11, and a second light is emitted from the second light-emitting region R2 through the second light-transmitting portion 12.

[0014] The first light-transmitting section 11 includes a first sintered body 11a containing phosphor particles, and the second light-transmitting section 12 includes a second sintered body 12a containing light-diffusing particles. The light incident on the second light-transmitting section 12 is diffused by the light-diffusing particles in the second sintered body 12a. That is, the second light-transmitting section 12 includes the second sintered body 12a, and thus the luminance of the light emitted from the second upper surface can be reduced. Here, in the second light-transmitting section 12, the relative density of the second sintered body 12a is 70% or more and 95% or less. The second sintered body 12a has the above relative density, and thus includes voids of 5% or more and 30% or less. The second sintered body 12a can further enhance the light-diffusing effect by diffuse reflection caused by the refractive index difference between the air disposed in the voids and the member constituting the second sintered body 12a. The second sintered body 12a can reduce the light transmittance and the luminance of the light emitted from the second upper surface by increasing the ratio of voids contained therein (i.e., decreasing the relative density). The second sintered body 12a can adjust the amount of light emitted from the second light-emitting region R2 by adjusting the value of the relative density (i.e., the porosity contained in the sintered body). The light emitting device of the first embodiment includes the light-transmissive member 10 configured as above, and thus, as will be described in detail later, the luminance of the second light emitting region R2 can be made lower than that of the first light emitting region R1. The light-transmitting member 10 shown in FIG. 3 will be described in detail below. It should be noted that the light-transmitting member 10 shown in FIG. 3 is merely an example, and the light-transmitting member in the light-emitting device according to the present disclosure is not limited to the light-transmitting member 10 shown in FIG.

[0015] The light-transmitting member 10 is a plate-like member having a lower surface onto which light emitted from the light-emitting element is incident, and an upper surface opposite to the lower surface. Here, the planar shape of the light-transmitting member 10 is rectangular. The thickness from the lower surface to the upper surface of the light-transmitting member 10 is preferably 50 μm or more from the viewpoint of improving mechanical strength, and is preferably 300 μm or less from the viewpoint of miniaturizing the light emitting device 100.

[0016] As described above, the light-transmitting member 10 includes the first light-transmitting portion 11 and the second light-transmitting portion 12. Here, the first light-transmitting portion 11 is composed of a first sintered body 11a containing phosphor particles. The second light-transmitting portion 12 includes a first layer 121 and a second layer 122 in this order from the light-emitting element 1 side, and the second layer 122 is composed of a second sintered body 12a containing light-diffusing particles. The first layer 121 contains phosphor particles. For example, the first layer 121 is a sintered body containing phosphor particles. In the second light-transmitting portion 12, the light transmitted through the first layer is diffused by the second layer, and a part of the light is emitted from the second light-emitting region R2. The first light transmitting portion 11 and the second-layer rear portion 12 have the same area on the upper surface of the light-transmitting member 10. The boundary between the first light transmitting portion 11 and the second light transmitting portion 12 on the upper surface of the light-transmitting member 10 is located at a position connecting the midpoints of two opposing sides of the rectangular upper surface.

[0017] The first sintered body 11a is, for example, a sintered body containing phosphor particles used as a wavelength conversion member of an LED, and is a member having translucency. The second sintered body 12a is a sintered body containing light diffusing particles, and is a member having translucency and light diffusibility. Furthermore, the second sintered body 12a is a member having high light diffusibility by setting the relative density to 70% or more and 95% or less. The second sintered body 12a can be used as a light adjusting member that adjusts the intensity of light emitted from the second light-emitting region R2 by adjusting the relative density of the second sintered body 12a and the thickness of the second light-transmitting portion 12.

[0018] As shown in FIG. 3, the second light transmitting portion 12 includes, for example, a first layer 121 made of the first sintered body 11a and a second layer 122 made of the second sintered body 12a. The light transmittance of the second layer 122 in the second light transmitting portion 12 is lower than that of the first layer 121. The first layer 121 in the second light transmitting portion 12 can be integrally formed with the first light transmitting portion 11. For example, as shown in FIG. 3, the first layer 121 and the first light transmitting portion 11 can be formed of the first sintered body 11a. Note that, when the first layer 121 and the first light transmitting portion 11 are integrally formed with the first sintered body 11a, no clear boundary is visible between the first layer 121 and the first light transmitting portion 11 in the light transmitting member 10. The thickness of the second layer 122 in the second light transmitting portion 12 is, for example, 30% to 70% of the thickness of the second light transmitting portion 12 of the light transmitting member 10.

[0019] The light emitting device 100 including the light-transmitting member 10 configured as above can have the first light emitting region R1 and the second light emitting region R2 having a lower luminance than the first light emitting region R1. This makes it possible to obtain a light emitting device having a high luminance region and a low luminance region within the light emitting surface. Furthermore, according to the light-transmitting member 10 configured as above, it is possible to cause the first light-transmitting portion 11 and the second light-transmitting portion 12 to emit light of desired chromaticity at desired luminance. For example, light of a desired chromaticity and intensity can be emitted from the first light-transmitting section 11 based on the emission wavelength of the light-emitting element 1, the type and content of phosphor particles contained in the first light-transmitting section 11, the thickness of the first light-transmitting section 11, etc. Furthermore, for example, the second light-transmitting section 12 can emit light of a desired chromaticity and intensity based on the emission wavelength of the light-emitting element 1, the type and content of phosphor particles contained in the first layer 121, the thickness of the second light-transmitting section 12, the ratio of the thicknesses of the first layer 121 and the second layer 122, the relative density of the second sintered body 12a, and the type and content of the light-diffusing particles contained therein. Here, the chromaticity of the light emitted from the first light-emitting region R1 and the second light-emitting region R2 may be the same or different. Specific configuration examples of the first sintered body and the second sintered body will be described in more detail below.

[0020] The second sintered body 12a is a light-transmitting member containing light-diffusing particles. The second sintered body 12a is a white member that is light-transmitting and has light-diffusing properties due to the light-diffusing particles and voids in the sintered body. The relative density of the second sintered body 12a is 70% or more and 95% or less. The second sintered body 12a has a lower light transmittance for the light emitted from the light-emitting element 1 and / or the light whose wavelength has been converted by the phosphor particles than the first sintered body 11a. As a result, the second sintered body 12a can be used as a light adjusting member for adjusting the brightness of the light emitted from the second light-emitting region R2 in the light-emitting device. The second sintered body 12a includes, for example, a base member made of an inorganic material and light diffusing particles contained in the base member. The light diffusing particles are preferably made of an inorganic material. The base member may be made of, for example, aluminum oxide, yttrium oxide, zirconium oxide, magnesium oxide, or silicon oxide, and preferably contains aluminum oxide or yttrium oxide, and more preferably contains aluminum oxide as a main component. The light diffusing particles may be made of, for example, rare earth oxides such as yttrium oxide and lanthanum oxide, boron nitride, silicon nitride, titanium oxide, silicon oxide, zirconium oxide, aluminum oxide, magnesium oxide, calcium carbonate, calcium hydroxide, calcium silicate, zinc oxide, barium titanate, potassium titanate, aluminum nitride, boron nitride, mullite, or a combination thereof, and preferably contains yttrium oxide, boron nitride, zirconium oxide, and more preferably contains yttrium oxide or boron nitride. As described in detail below, the second sintered body 12a can be sintered to a desired relative density by, for example, discharge plasma sintering. The relative density of the second sintered body 12a is one parameter for setting the translucency of the second sintered body 12a to a predetermined value.

[0021] The second sintered body 12a is produced, for example, by mixing aluminum oxide powder as a base member and yttrium oxide and / or boron nitride powder as light diffusing particles in a predetermined ratio and sintering the mixture. As described above, the second sintered body 12a is a member that is given light diffusibility by making aluminum oxide contain light diffusing particles and setting the relative density to 70% or more and 95% or less. The mixing ratio of the powder as the base member and the powder as the light diffusing particles and the sintering conditions of the second sintered body are set so that the predetermined relative density is achieved within the above range. Note that, in addition to aluminum oxide, yttrium oxide, zirconium oxide, magnesium oxide, and silicon oxide can be used as the base member. As light diffusing particles, in addition to rare earth oxides such as yttrium oxide and lanthanum oxide, and boron nitride (BN), titanium oxide, silicon oxide, zirconium oxide, aluminum oxide, magnesium oxide, calcium carbonate, calcium hydroxide, calcium silicate, zinc oxide, barium titanate, potassium titanate, aluminum nitride, silicon nitride, mullite, and combinations thereof can be used.

[0022] The first sintered body 11a is a light-transmitting member containing phosphor particles, and is used as a wavelength conversion member in a light-emitting device that converts the wavelength of light from a light-emitting element and emits it to the outside. The first sintered body 11a has light-transmitting properties and has the appearance color (e.g., yellow) of the phosphor particles contained therein. The first sintered body 11a has a light transmittance of 60% or more for light emitted from the light-emitting element 1 and / or light whose wavelength has been converted by the phosphor particles, preferably 70% or more, and more preferably 80% or more. Since the first sintered body 11a has high light-transmitting properties, it is preferable that the first sintered body 11a has a high relative density. For example, the relative density of the first sintered body 11a is preferably 95% or more and 99% or less. This makes it possible to obtain a sintered body with excellent light-transmitting properties, and to efficiently convert the wavelength of light incident on the first sintered body 11a in the crystal phase of the phosphor. The first sintered body 11a can be produced, for example, by mixing phosphor particles with inorganic powder such as aluminum oxide, which serves as a base material for the sintered body, and sintering the mixture. Any inorganic powder may be used, and only the phosphor particles may be sintered, for example, by firing them using a sintering aid. The phosphor contained in the first sintered body 11a can be an yttrium-aluminum-garnet (YAG) phosphor (for example, (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride phosphors, LSN phosphors (e.g., (La,Y)3Si6N 11 :Ce), BSESN phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu) or SCASN phosphors (e.g., (Sr,Ca)AlSiN3:Eu), nitride phosphors such as KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si 1-x Al x )F 6-x:Mn where x satisfies 0 < x < 1. Or a fluoride-based phosphor such as an MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), a quantum dot having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), a II-VI group quantum dot (e.g., CdSe), a III-V group quantum dot (e.g., InP), or a quantum dot having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used.

[0023] The light-transmissive member 10 of Embodiment 1 includes the first light-transmissive portion 11 and the second light-transmissive portion 12 configured as described above. Thereby, in the light-emitting device 100 of Embodiment 1, in the light-emitting region R, the luminance of the second light-emitting region R2 can be made lower than the luminance of the first light-emitting region R1.

[0024] When the light-emitting device 100 having the first light-emitting region R1 and the second light-emitting region R2 with a luminance difference on such a light-emitting surface is used for an in-vehicle headlight, it is possible to arrange the high-luminance region in a desired region of the irradiation region. For this reason, it becomes easy to obtain a desired light distribution without using a complicated optical design such as a reflector or a lens. Thereby, the headlight can be miniaturized, and the designability of the headlight can be improved.

[0025] In the light-transmissive member 10, the first light-transmissive portion 11 and the second light-transmissive portion 12 may be in contact with each other or may be separated from each other. Note that, in the light-transmissive member 10, the fact that the first light-transmissive portion 11 and the second light-transmissive portion 12 are in contact with each other includes a case where separate constituent members of the first light-transmissive portion 11 and the second light-transmissive portion 12 are in contact with each other, and a case where the first light-transmissive portion 11 and the second light-transmissive portion 12 are constituted by different regions of an integral constituent member. The fact that the first light-transmissive portion 11 and the second light-transmissive portion 12 include different regions of the same constituent member includes, for example, the case where the first layer of the first light-transmissive portion 11 and the second light-transmissive portion 12 is integrally formed by a first sintered body. Further, in the second light-transmissive portion 12, the first layer 121 and the second layer 122 may be in contact with each other or may be separated from each other. By arranging the first light-transmitting portion 11 and the second light-transmitting portion 12 in contact with each other in the light-transmitting member 10, the first light-emitting region R1 and the second light-emitting region R2 having different luminance and / or chromaticity can be arranged adjacent to each other in the light-emitting region R of the light-emitting device 100. At this time, since the interface between the first sintered body 11a in the first light transmitting portion 11 and the second sintered body 12a in the second light transmitting portion 12 includes a substantially vertical surface continuing to the upper surface of the light-transmitting member 10, it is possible to increase the luminance difference between the first light-emitting region R1 and the second light-emitting region R2 in the vicinity of the boundary between the first light-transmitting portion 11 and the second light-transmitting portion 12. In other words, it is possible to make the change in luminance in the vicinity of the boundary between the first light-transmitting portion 11 and the second light-transmitting portion 12 steep. Furthermore, in the case where the first light transmitting portion 11 and the second light transmitting portion 12 are in contact with each other in the light-transmitting member 10, the boundary between the first sintered body 11a in the first light transmitting portion 11 and the second sintered body 12a in the second light transmitting portion 12 can be inclined with respect to the upper surface of the light-transmitting member 10, thereby reducing a sudden change in luminance near the boundary. Furthermore, the boundary between the first sintered body 11a and the second sintered body 12a may be curved, for example, as shown in FIG. 3. This also reduces a sudden change in luminance near the boundary. That is, by appropriately adjusting the configuration of the vicinity of the boundary between first light transmitting portion 11 and second light transmitting portion 12 in accordance with the specifications, it is possible to set the change in luminance in the vicinity of the boundary. Each component of the light emitting device of the first embodiment will be specifically described below.

[0026] [Light-emitting element 1] The light-emitting element 1 has an upper surface which is a main light-emitting surface 1a of the light-emitting element 1, a lower surface located opposite to the upper surface, and a side surface connected to the upper surface and the lower surface. The light-emitting element 1 can be a light-emitting diode. The light-emitting element 1 includes a semiconductor structure L1 and at least a pair of positive and negative element electrodes 1e. In this specification, the term element electrode 1e is used when there is no particular need to distinguish between positive and negative electrodes for the purpose of explanation, and when there is a need to distinguish between positive and negative electrodes, the terms p-electrode and n-electrode are used. The semiconductor structure L1 includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer sandwiched between the n-side semiconductor layer and the p-side semiconductor layer, and is disposed on, for example, a support substrate S1. The active layer may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The semiconductor structure includes, for example, multiple semiconductor layers made of nitride semiconductors. The nitride semiconductor is In x Al y Ga 1-x-y The term includes semiconductors of all compositions in which the composition ratios x and y in the chemical formula N (0≦x, 0≦y, x+y≦1) are changed within the respective ranges. The emission peak wavelength of the active layer can be appropriately selected depending on the purpose. The active layer is configured to be capable of emitting, for example, visible light or ultraviolet light.

[0027] In the first embodiment, the semiconductor structure L1 is exemplified as having one light emitting section including an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. However, as shown in the embodiment described later, the semiconductor structure L1 may have a plurality of light emitting sections each including an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. The emission peak wavelengths being the same also include the case where there is a variation of about several nm. The combination of the emission peak wavelengths of the plurality of light emitting sections can be appropriately selected. For example, when the semiconductor structure includes two light emitting sections, the combination of light emitted by each light emitting section may be blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. For example, when the semiconductor structure includes three light emitting sections, the combination of light emitted by each light emitting section may be blue light, green light, and red light. Each light emitting section may include one or more well layers having emission peak wavelengths different from other well layers. The shape, size, etc. of the light emitting element 1 can be selected in various ways depending on the purpose.

[0028] The light-emitting element 1 may include a support substrate S1 that supports the semiconductor structure L1. Examples of the support substrate S1 include insulating substrates such as sapphire and spinel (MgAl2O4), and nitride-based semiconductor substrates such as InN, AlN, GaN, InGaN, AlGaN, and InGaAlN. When the light emitted from the light-emitting portion is extracted through the support substrate (i.e., when the support substrate constitutes the light-emitting surface 1a), it is preferable that the support substrate is made of a material having translucency. The light-emitting element 1 does not need to include the support substrate S1.

[0029] The light-emitting element 1 includes an element electrode 1e disposed on at least the lower surface of the light-emitting element 1. For example, the light-emitting element 1 has at least a pair of positive and negative element electrodes disposed on the same surface side of the semiconductor structure. The positive and negative element electrodes can be disposed in consideration of the position of the wiring of the wiring board 40, etc. The element electrode 1e of the light-emitting element 1 is connected to the wiring 42 of the wiring board 40, for example, via a conductive bonding member. As the conductive bonding member, eutectic solder, conductive paste, bumps, etc. can be used. Note that the element electrode 1e of the light-emitting element 1 and the wiring 42 may be directly bonded without the conductive member.

[0030] [Substrate 40] The substrate 40 is a plate-like member including a base material 41 and wiring 42 arranged on at least the upper surface of the base material 41 . The substrate 41 can be made of, for example, an insulating material such as glass epoxy, resin, or ceramic, a semiconductor material such as silicon, or a conductive material such as metal. Among them, ceramics having high heat resistance and light resistance can be preferably used. Examples of ceramics include aluminum oxide, aluminum nitride, silicon nitride, and LTCC. Composite materials of these insulating materials, semiconductor materials, and conductive materials can also be used. When a conductive material such as a semiconductor material or metal is used as the substrate 41, the wiring 42 can be arranged on the upper and lower surfaces of the substrate 41 via an insulating layer.

[0031] The wiring 42 includes at least a first wiring 421 and a second wiring 422 disposed on the upper surface of the base material 41. The wiring 42 may further include an external connection terminal disposed on the lower surface opposite to the upper surface. In this case, the first wiring 421 and the second wiring 422 disposed on the upper surface of the base material 41 may be connected to the external connection terminal via a relay wiring disposed inside or on a side surface of the base material 41. Examples of materials for the wiring 42 include metals such as Fe, Cu, Ni, Al, Ag, Au, Pt, Ti, W, and Pd, and alloys containing at least one of these metals.

[0032] [Electronic Components 30] The electronic component 30 is, for example, a protective element. The protective element is, for example, a Zener diode. The electronic component 30 is connected to the first wiring 421 and the second wiring 422 by, for example, a conductive member. The light emitting device 100 may not include the electronic component 30.

[0033] [Covering member 60] The covering member 60 is an insulating member disposed on the substrate 40, exposing the upper surface of the light-transmitting member 10, and covering the side surfaces of the light-transmitting member 10 and the side surfaces of the light-emitting element 1. When the light-emitting device 100 includes an electronic component 30, the covering member 60 preferably covers the electronic component 30.

[0034] The covering member 60 preferably has light blocking properties (specifically, light reflectivity and / or light absorption properties), and in particular, preferably has light reflectivity. The covering member 60 is configured to include, for example, light reflecting particles and a base material. The light reflecting particles are particles that have light reflectivity with respect to light emitted by the light emitting element. The material of the light reflecting particles is, for example, titanium oxide, silicon oxide, zirconium oxide, boron nitride, and aluminum oxide. The light reflecting particles can include at least one of these. The base material may be configured to include an organic material, may be configured to include an inorganic material, or may be configured to include both an organic material and an inorganic material. A resin can be used as the organic material. An alkali metal silicate can be used as the inorganic material. Among them, from the viewpoint of reliability, it is preferable that the covering member 60 is made of an inorganic material. The covering member 60 can be made of, for example, a mixture containing boron nitride and an alkali metal silicate. This mixture can be produced by mixing a mixed powder of boron nitride powder and silicon oxide powder with an alkaline solution (e.g., potassium hydroxide) and then heat-curing the mixture. When the alkaline solution is potassium hydroxide, the silicon oxide reacts with the potassium hydroxide during heat-curing to produce potassium silicate, which is an alkali metal silicate. Boron nitride is a material that can reduce the shrinkage of the mixture during heat-curing. Aluminum oxide can be used instead of boron nitride.

[0035] The concentration of the light-reflective material in the covering member 60 is preferably, for example, 60% by mass or more and 70% by mass or less. The concentration of the light-reflective material indicates the ratio of the light-reflective material in the covering member 60 that contains the light-reflective material. The reflectance of the covering member 60 is, for example, preferably 70% or more, and more preferably 80% or more. The reflectance refers to the reflectance at the emission peak wavelength of the light emitted from the light-emitting element 1.

[0036] [Anti-reflective film] The light emitting device 100 preferably includes an anti-reflection film 70 that covers the light emitting surface. The anti-reflection film 70 is a light-transmitting thin film that collectively covers the first light-transmitting portion 11 and the second light-transmitting portion 12. By including the anti-reflection film 70 that covers the light emitting surface, the light emitting device 100 can reduce the transmission of light from the outside while improving the light emission efficiency from the light emitting element 1. The anti-reflection film 70 can be a single-layer or multi-layer light-transmitting film of SiO2, ZrO2, or the like. The anti-reflection film 70 covers the boundary between the first sintered body 11a and the second sintered body 12a on the upper surface of the light-transmitting member 10, and can improve the adhesion between them.

[0037] A method for manufacturing the light emitting device of the first embodiment will now be described. The method for producing the light emitting device of the first embodiment includes the steps of: preparing a light emitting element having an upper surface as a light emitting surface; preparing a light-transmitting member including a first light-transmitting portion having a first light incident surface and a first light exit surface, and a second light-transmitting portion having a second light incident surface and a second light exit surface and having a lower light transmittance than the first light-transmitting member; a step of placing a light-transmitting member on the light-emitting element such that the first light incident surface and the second light incident surface face a light exit surface of the light-emitting element; Includes. Each step will be described below.

[0038] (1) Step ST1 of preparing a light-emitting element In the step of preparing a light emitting element, a light emitting element having an upper surface as a light emitting surface is prepared. For example, in the step of preparing a light-emitting element, a support substrate is prepared, a semiconductor structure including at least one light-emitting portion is disposed on the support substrate, and at least a pair of positive and negative element electrodes is disposed on the surface of the semiconductor structure opposite to the support substrate side, thereby preparing the light-emitting element. Here, the light-emitting surface of the light-emitting element is the surface on the support substrate side, and a translucent member described later is disposed on the support substrate. Note that the step ST1 of preparing the light-emitting element may include a step of removing the support substrate. In this case, the light-emitting surface of the light-emitting element is the surface of the semiconductor structure opposite to the side on which the element electrodes are disposed. Note that the light-emitting element may be prepared by purchase, transfer, etc.

[0039] (2) Step ST2 of preparing a light-transmitting member In the process of preparing a light-transmitting member, a light-transmitting member is prepared that includes a first light-transmitting section having a first light incident surface and a first light exit surface, and a second light-transmitting section having a second light incident surface and a second light exit surface and having a lower light transmittance than the first light-transmitting member. Here, the step ST2 of preparing the light-transmitting member may include, for example, A step ST2-1 of preparing a light-transmitting substrate made of an inorganic material and having a first main surface and a second main surface located on the opposite side to the first main surface; A step ST2-2 of forming a recess on a first main surface of a light-transmitting substrate; a step ST2-3 of disposing a powder containing (i) a base member made of an inorganic material and (ii) light diffusing particles made of an inorganic material in the recess and sintering the powder to form a sintered portion in the recess having a lower light transmittance than the light-transmitting substrate; A process ST2-4 of dividing the light-transmitting substrate on which the sintered portion is formed to form a light-transmitting member having a first light-transmitting portion made of a part of the light-transmitting substrate and a second light-transmitting portion including a part of the sintered portion and a part of the light-transmitting member; Includes. Each step will now be described in detail.

[0040] In step ST2-1, for example, a light-transmitting substrate is prepared by mixing light-transmitting inorganic particles that are a base member of the light-transmitting substrate with phosphor particles and sintering the mixture. The inorganic particles that are the base member are, for example, aluminum oxide, and the phosphor particles are YAG phosphor particles. Note that any inorganic particles may be used, and only the phosphor particles may be sintered. For example, a light-transmitting substrate with excellent heat dissipation properties can be produced by mixing and sintering a powder containing inorganic particles with high thermal conductivity, such as aluminum oxide, and phosphor particles as the base member. For example, it is possible to contain 50% or more, for example 80% to 95%, of aluminum oxide in the powder containing a YAG phosphor and aluminum oxide, thereby producing a light-transmitting substrate with high heat dissipation properties. It is also possible to make the aluminum oxide content 20% or less, for example 10% to 20%, of the total of the YAG phosphor and aluminum oxide, thereby producing a light-transmitting substrate with a high wavelength conversion rate for incident light while maintaining a relatively high heat dissipation property. It is also possible to mix a small amount of light diffusing particles such as YAlO3 as a light diffusing material, for example, about 5%, into a powder containing phosphor particles such as YAG phosphor, and sinter it. This makes it possible to manufacture a translucent substrate with excellent light diffusing efficiency. In this way, the types and mixing ratios of the phosphor and other inorganic materials can be selected in various ways depending on the purpose.

[0041] The light-transmitting substrate is, for example, a wafer-like substrate with a circular outer shape, as shown in Figs. 4 and 5. For example, the diameter of the light-transmitting substrate is about 4 inches, and the thickness t1 is about 0.5 mm. The light-transmitting substrate can be produced, for example, by slicing a cylindrical sintered body obtained by the method disclosed in JP 2018-172628 A using a mixture of inorganic material powder and phosphor powder as a raw material to a predetermined thickness t1 using a wire saw or the like. Here, when mixing the raw materials, i.e., mixing the inorganic particles and the phosphor particles, an organic material such as a binder may be added and mixed, and the phosphor particles may be made to have a predetermined phosphor structure by using particles that are raw materials for the phosphor instead of particles of the phosphor itself. In addition, the molding may be performed in two or more stages, such as pressing by cold isostatic pressing (CIP) after pressing using a mold. Sintering may be performed in a vacuum, air, or in an inert gas atmosphere. The light-transmitting substrate may be prepared by purchase, transfer, etc.

[0042] In step ST2-2, a recess d11 is formed in the first main surface of the light-transmitting substrate B11. As shown in FIGS. 4 and 5, a recess d11 is formed in the first main surface of the light-transmitting substrate B11, for example, in the shape of a groove. The width W11 of the recess d11 (groove width) is at least twice the width of the second light-transmitting portion 12. Specifically, the width is twice the width of the second light-transmitting portion 12 plus the width (for example, the width of the blade used) removed when dividing the light-transmitting substrate in step ST2-4 described later. The interval between adjacent recesses d11 is at least twice the width of the first light-transmitting portion 11. Specifically, the width is twice the width of the first light-transmitting portion 11 plus the width (for example, the width of the blade used) removed when dividing in step ST2-4 described later. The depth (t1-t2) of the recess d11 is the thickness of the second sintered body in the second light-transmitting portion 12 plus a grinding allowance when grinding the obtained light-transmitting substrate B11 to a predetermined thickness in step ST2-3 described later. In addition, the side of the recess d11 is preferably inclined so that the width of the opening increases upward. In other words, the angle between the side of the recess d11 and the first main surface that defines the recess d11 is preferably 90 degrees or more. This makes it possible to suppress variations in density of the sintered body formed in the recess d11. In order to suppress variations in density of the sintered body, it is not necessary for the entire side of the recess d11 to be inclined, and it is sufficient that at least a portion of the side of the recess d11 is curved or inclined, as shown in FIG. 5. The degree of inclination or curvature of the side surface of the recess d11, and the portion to be inclined or curved can be set so that the change in luminance near the boundary between the first light-emitting region and the second light-emitting region becomes a desired change.

[0043] In step ST2-3, a powder containing (i) a base member made of an inorganic material and (ii) light diffusing particles made of an inorganic material is placed in the recess, and the powder is sintered to form a second sintered body in the recess as a sintered portion having a lower light transmittance than the light-transmitting substrate. The second sintered body is sintered, for example, by using a spark plasma sintering method (SPS method). Hereinafter, the formation of the sintered portion (second sintered body) by the spark plasma sintering method will be described.

[0044] First, inorganic particles that will become the base material of the sintered portion (second sintered body) after sintering and light diffusing particles that will become the light diffusing particles of the sintered portion (second sintered body) after sintering are mixed. Then, as shown in FIG. 6 and FIG. 7, the mixture M122 is placed on the first main surface of the light-transmitting substrate B11. The mixture M122 is placed so that the mixture M122 fills the recess d11 and covers the entire first main surface. The thickness t3 (height from the first main surface of the light-transmitting substrate B11) of the mixture M122 covering the first main surface is preferably at least twice the depth (t1-t2) of the recess d11. This can reduce the variation in density of the second sintered body formed in the recess d11. Then, a voltage is applied to the light-transmitting substrate B11 on which the mixture M122 is placed, while applying pressure from the upper surface of the mixture M122 and the lower surface of the light-transmitting substrate B11 in a discharge plasma sintering apparatus, to form a sintered body. The pressure applied when forming the sintered body is, for example, 10 to 50 MPa. The input current when forming the sintered body can be appropriately adjusted depending on the size of the sintered body to be obtained. The spark plasma sintering apparatus 500 used in the spark plasma sintering method is an apparatus that applies a large pulsed current at a low voltage to the mixture M122 and sinters the powder with the high energy of the discharge plasma that is instantly generated by the spark discharge phenomenon, and is configured as follows.

[0045] As shown in Fig. 8, the spark plasma sintering apparatus 500 includes an upper punch 510, a lower punch 520, and a sintering die 530, which are made of, for example, carbon. Here, the sintering die 530 has a cylindrical through hole H530 into which a light-transmitting substrate is inserted, and the light-transmitting substrate inserted into the through hole H530 is sandwiched and pressed between the upper punch 510 and the lower punch 520 in the through hole H530. At least one of the upper punch 510 and the lower punch 520 can move up and down within the through hole of the sintering die 530. In addition, the upper punch 510 is provided with an upper electrode, and the lower punch 520 is provided with a lower electrode, and a voltage is applied to the powder mixture sandwiched between the upper electrode and the lower electrode. Using the spark plasma sintering apparatus 500 configured as described above, a voltage is applied to the light-transmitting substrate on which the powder mixture sandwiched between the upper punch 510 and the lower punch 520 is placed within the through-hole H530 to sinter the powder mixture, and then the substrate is cooled to form a sintered body S122 on the light-transmitting substrate B11. The sintered body S122 on the light-transmitting substrate B11 thus formed constitutes a second sintered body through the process described below. Therefore, the conditions of the discharge plasma sintering apparatus 500 are set so that the sintered body S122 has a predetermined relative density required for the second sintered body (for example, a predetermined relative density in the range of 70% to 95%). In the sintered body S122, the relative density of the sintered body S122a on the recess d11 tends to be smaller than the relative density of the sintered body S122b on the first main surface between the adjacent recesses d11. In this case, the second sintered body is constituted by the sintered body S122a, and the conditions of the discharge plasma sintering apparatus 500 are set so that the sintered body S122a has a desired relative density. The spark plasma sintering apparatus 500 can be installed in a chamber in which the atmosphere during sintering can be adjusted, for example. In this way, the inside of the chamber can be appropriately set to a vacuum, air, or an inert gas atmosphere such as nitrogen or argon. In addition, after forming the sintered body, an annealing treatment may be further performed. The annealing treatment can be performed, for example, in air, nitrogen, or a hydrogen / nitrogen mixed gas. In particular, when the base member is an oxide, it is preferable to perform annealing in air or oxygen reflux atmosphere at a temperature of about 1000°C to 1500°C for 1 to 5 hours. This makes it possible to remove carbon that has adhered to or penetrated into the spark plasma sintering apparatus 500.

[0046] When the second sintered body is made of, for example, aluminum oxide particles as a base member and yttria oxide and / or boron nitride powder as light-reflective particles, the conditions of the spark plasma sintering are, for example, a peak temperature of 1000°C to 1500°C, an applied pressure of 10 to 50 MPa, and holding time of about 5 to 30 minutes, thereby obtaining a second sintered body with a predetermined relative density.

[0047] After forming the sintered body S122 on the light-transmitting substrate B11, as shown in FIG. 11, the sintered body S122b on the first main surface is removed by grinding or the like. Furthermore, the sintered body S122 is ground so that the thickness of the sintered body S122a in the recess d11 becomes the desired thickness t122 ​​of the second sintered body 12a in the light-transmitting member 10 to be obtained. At this time, the surface on the first main surface side of the light-transmitting substrate B11 may also be ground at the same time. In addition, the lower surface of the light-transmitting substrate B11 may also be ground as necessary to adjust the thickness of the light-transmitting substrate B11 located between the recesses d11 constituting the first light-transmitting portion 11 to a predetermined thickness t11. The grinding of the sintered body S122 and the grinding of the lower surface of the light-transmitting substrate B11 may be performed simultaneously or separately. In addition, when preparing the light-transmitting substrate B11, the light-transmitting substrate B11 may be prepared to have a thickness t11, so that the grinding of the light-transmitting substrate B11 may be omitted.

[0048] In step ST2-4, as shown in Fig. 10 and Fig. 11, the light-transmitting substrate on which the sintered portion S122 is formed is divided along the division lines C11 and C12. This forms a light-transmitting member having a first light-transmitting portion made of a part of the light-transmitting substrate and a second light-transmitting portion made of a part of the sintered portion and a part of the light-transmitting substrate. Here, the division line C11 is located on the center line of the recess d11 in the longitudinal direction, and the division line C12 is a line perpendicular to the division line C11.

[0049] Through the above steps, the light-transmitting member 10 is produced. The method for producing the light emitting device of the first embodiment includes the above-described step of producing the light-transmitting member 10, and may further include the following steps.

[0050] (3) Preparing the assembly board In the step of preparing an aggregate substrate, an aggregate substrate including a plurality of substrate regions that will become the wiring substrate 40 of the light emitting device 100 is prepared. The plurality of substrate regions are arranged, for example, in a matrix. To prepare the aggregate substrate, first, a plate-shaped base material (i.e., an aggregate of base materials 41) made of, for example, glass epoxy, resin, ceramics, etc. is prepared. Next, the first wiring 421 and the second wiring 422 are formed in each substrate region of the base material. The first wiring 421 and the second wiring 422 can be formed by a known method such as plating, vapor deposition, sputtering, etc. The aggregate substrate may be prepared by purchasing, transferring, etc. a substrate on which wiring has already been arranged.

[0051] (4) Step of arranging the light emitting element 1 In the process of arranging the light emitting elements 1, the light emitting elements 1 are arranged in each substrate region of the collective substrate. For example, the light emitting elements 1 are arranged in predetermined positions in the substrate regions such that the element electrodes 1e face the wiring 42, as shown in Fig. 13. The wiring 42 and the element electrodes 1e can be joined via a conductive bonding member, for example. Similarly, electronic components 30 are arranged in predetermined positions as necessary. 13 and the like, a member indicated with the reference symbol M40 is a mask provided for exposing the wiring 42 from the covering member 60. As shown in FIG.

[0052] (5) Step of arranging the light-transmitting member 10 In the step of arranging the light-transmitting members 10, the light-transmitting members 10 are arranged facing the light emission surfaces of the light-emitting elements 1 arranged on the assembly substrate, as shown in Fig. 14. The light-emitting elements 1 and the light-transmitting members 10 can be bonded together by a known adhesive member such as a light-transmitting resin. The light-transmitting members 10 may also be bonded to the support substrate 15 by a direct bonding method such as pressure bonding, surface activated bonding, atomic diffusion bonding, or hydroxyl group bonding. The step of arranging the light-transmitting member 10 may be performed before the step of arranging the light-emitting elements. In this case, in the step of arranging the light-emitting elements 1 described above, the light-emitting elements 1 on which the light-transmitting member 10 is arranged are arranged on the aggregate substrate.

[0053] (6) Step of placing the covering member 60 In the step of arranging the covering member 60, as shown in Fig. 15, the uncured covering member 60 is arranged so as to cover the side surfaces of the light-emitting element 1 and the light-transmitting member 10 arranged on the collective substrate and to expose the upper surface of the light-transmitting member 10 which becomes the light-emitting surface of the light-emitting device. The covering member 60 can be arranged by potting, for example. Then, the uncured covering member 60 is cured. The covering member 60 can also be arranged by compression molding, transfer molding, or the like. Then, after the covering member 60 is placed (preferably after curing), the mask M40 is removed as shown in Fig. 16. The mask M40 may be removed after singulation, which will be described later. In the step of arranging the covering member 60, a wall for holding the covering member 60 may be arranged on the assembly substrate without using the mask M40. The wall may be made of, for example, a resin having a higher hardness than the resin forming the covering member 60. The wall may be a part of the base material 41, and for example, the wiring substrate 40 may have a structure having a recess in which the light emitting element is arranged.

[0054] (7) A process of dividing the light emitting device 100 into individual pieces In the process of dividing into individual light emitting devices 100, the collective substrate is divided into individual light emitting devices 100 with a blade or the like along the outer edge of each substrate region (eg, the separation line indicated by the dashed line DL2 in FIG. 16). Through the steps described above, the light emitting device 100 of the first embodiment is manufactured.

[0055] In the manufacturing method of the light-emitting device 100 of embodiment 1, the chromaticity and emission spectrum of the light emitted from the upper surface of the first light-transmitting section 11, the chromaticity and emission spectrum of the light emitted from the upper surface of the second light-transmitting section 12, the luminance in the first light-emitting region R1, and the luminance in the second light-emitting region R2 are set by selecting appropriate materials such as the type of the light-emitting element 1 and the material of each of the above-mentioned components, and further by appropriately setting various parameters such as the size of each component.

[0056] Although the light emitting device 100 according to the first embodiment of the present disclosure has been described below, the first embodiment of the present disclosure is not limited to the specific examples described above, and various modifications are possible. Modifications of the light emitting device 100 according to the first embodiment of the present disclosure will be described below.

[0057] Variation 1 FIG. 17 is a cross-sectional view of a light-transmitting member 10-1 used in the light-emitting device of the first modification. The light emitting device of the first modification is configured similarly to the light emitting device of the first embodiment, except for the light-transmissive member 10-1. In a light-transmitting member 10-1 of the light-emitting device of Modification 1, the top and bottom of the first and second layers in a second light-transmitting portion 12-1 are reversed from those in the light-emitting device 100 of the first embodiment, as shown in FIG. Here, the first layer 121-1 and the second layer 122-1 in the second light transmitting portion 12-1 are configured similarly to the first layer 121 and the second layer 122 in the second light transmitting portion 12 of the first embodiment, respectively. Moreover, first light transmitting section 11-1 in the light emitting device of Modification 1 is configured similarly to first light transmitting section 11 in light emitting device 100 of the first embodiment. The light emitting device of Modification 1 configured as described above can provide a light emitting device having a high luminance region (first light transmitting portion 11-1) and a low luminance region (second light transmitting portion 12-1) in the light emitting surface, similar to the light emitting device 100 of Embodiment 1. Furthermore, since the boundary between the first light transmitting portion 11-1 in the light transmissive member 10-1 and the second layer 122-1 of the second light transmitting portion 12-1 is located on the lower surface side of the light transmissive member 10-1, it is possible to make the change in luminance of the first light emitting region R1 and the second light emitting region R2 in the vicinity of the boundary between the first light transmitting portion 11-1 and the second light transmitting portion 12-1 gentle.

[0058] Variation 2 FIG. 18 is a cross-sectional view of a light-transmitting member 10-3 used in the light-emitting device of the second modification. The light emitting device of the second modification is configured similarly to the light emitting device of the first embodiment, except for the light-transmissive member 10-3. As shown in FIG. 18, a light-transmitting member 10-3 of the light-emitting device of Modification 2 has two second light-transmitting portions 12-3 disposed on either side of a first light-transmitting portion 11-3. Here, the first layer 121-3 and the second layer 122-3 in the second light transmitting portion 12-3 arranged on both sides of the first light transmitting portion 11-3 are configured similarly to the first layer 121 and the second layer 122 in the second light transmitting portion 12 of the first embodiment. Moreover, first light transmitting section 11-3 in the light emitting device of Modification 2 is configured similarly to first light transmitting section 11 in light emitting device 100 of the first embodiment. The light emitting device of Modification 2 configured as above can be a light emitting device having one high luminance region and two low luminance regions sandwiching the high luminance region within the light emitting surface.

[0059] Variation 3 FIG. 19 is a cross-sectional view of a light-transmitting member 10-4 used in the light-emitting device of the third modification. The light emitting device of the third modification is configured similarly to the light emitting device of the first embodiment, except for the light-transmissive member 10-3. The light-transmitting member 10-4 of the light-emitting device of the modification 3 is similar to the modification 2 in that two second light-transmitting portions 12-4 are arranged on both sides of the first light-transmitting portion 11-4 as shown in FIG. 19, but the thickness of the second layer 122-4 in the second light-transmitting portion 12-4 arranged on one side of the first light-transmitting portion 11-4 is different from the thickness of the second layer 122-4 in the second light-transmitting portion 12-4 arranged on the other side of the first light-transmitting portion 11-4. This allows light beams with different luminances to be emitted from the two external light-transmitting portions 12-4. The configuration is similar to the modification 2 except for the difference in thickness between the second layers 122-4 in the two second light-transmitting portions 12-4. The light emitting device of the third modification configured as above can be a light emitting device having one high luminance region, and a low luminance region and a medium luminance region sandwiching the high luminance region in the light emitting surface. The medium luminance region is a region that emits light with a luminance between the light emitted from the high luminance region and the light emitted from the low luminance region. In the light emitting device of the third modification, the second layer 122-4 of the medium luminance region is thicker than that of the low luminance region.

[0060] Variation 4 FIG. 20 is a plan view of a light-transmissive member 10-5 used in the light-emitting device of the fourth modification. The light emitting device of the fourth modification example is configured similarly to the light emitting device of the first embodiment, except for the light-transmissive member 10-5. As shown in FIG. 20, in the light-emitting device of variant example 4, the light-transmitting member 10-5 has second light-transmitting portions 12-5 arranged along three sides of a rectangle in a plan view, and a first light-transmitting portion 11-5 is arranged so as to be surrounded by the second light-transmitting portion 12-5. In the light-emitting device of variant example 4, the light-transmitting member 10-5 has the second light-transmitting portion 12-5 arranged along three sides of a rectangle in a planar view, but the first light-transmitting portion 11-5 may be arranged along the three sides, and the second light-transmitting portion 12-5 may be arranged so as to be surrounded by the first light-transmitting portion 11-5. The light emitting device of variant example 4 configured as described above can be configured in various shapes corresponding to the planar shapes of the second light-transmitting portion 12-5 and the first light-transmitting portion 11-5 in the light-transmitting member 10-5, respectively, so that the high-brightness areas and the low-brightness areas can be arranged in various shapes within the light-emitting surface.

[0061] Variation 5 FIG. 21 is a plan view of a light-transmissive member 10-6 used in the light-emitting device of the fifth modification. The light emitting device of the fifth modification is configured similarly to the light emitting device of the first embodiment, except for the light-transmissive member 10-6. As shown in FIG. 21, in a light-transmitting member 10-6 of the light-emitting device of Modification 5, a second light-transmitting portion 12-6 has a larger area than a first light-transmitting portion 11-6 in a plan view. In FIG. 21, second light transmitting portion 12-6 has a larger area than first light transmitting portion 11-5 in a plan view, but first light transmitting portion 11-6 may have a larger area than second light transmitting portion 12-6 in a plan view. In the light emitting device of the fifth modification configured as above, the first light emitting region and the second light emitting region can be configured to have a desired area ratio.

[0062] Variation 6 FIG. 22 is a plan view of a light-transmissive member 10-7 used in the light-emitting device of the sixth modification. The light emitting device of the sixth modification is configured similarly to the light emitting device of the first embodiment, except for the light-transmissive member 10-7. In the light-emitting device of the sixth modification, the light-transmitting member 10-7 has two second light-transmitting portions disposed on both sides of the first light-transmitting portion 11-7, and the area of ​​one second light-transmitting portion 12-7a is larger than the area of ​​the other second light-transmitting portion 12-7b, as shown in Fig. 22. This makes it possible to make the areas of the second light-emitting regions corresponding to one second light-transmitting portion 12-7a and the other second light-transmitting portion 12-7b different. In the light emitting device of the sixth modification configured as above, the areas of the first light emitting region and the second light emitting regions on both sides thereof can be configured to have a desired area ratio.

[0063] Variation 7 FIG. 23 is a plan view of a light-transmissive member 10-10 used in the light-emitting device of the seventh modification. The light emitting device of the seventh modification example is configured similarly to the light emitting device of the first embodiment, except for the light-transmissive member 10-10. In the light-transmitting member 10-10 of the light-emitting device of the seventh modification, the first light-transmitting portion 11-10 and the second light-transmitting portion 12-10 have different areas as shown in Fig. 23. The first light-transmitting portion 11-10 and the second light-transmitting portion 12-10 have trapezoidal shapes in a plan view. Specifically, the light-transmitting member 10-10 of the seventh modification is rectangular in a plan view, and one trapezoidal portion separated by a straight line connecting one point on an opposing side of the rectangular light-transmitting member 10-10 is the first light-transmitting portion 11-10, and the other separated trapezoidal portion is the second light-transmitting portion 12-10. In the light emitting device of variant 7 configured as described above, the first light emitting region and the second light emitting region can be configured to have a trapezoidal shape corresponding to the planar shapes of first light transmitting portion 11-10 and second light transmitting portion 12-10, respectively.

[0064] EMBODIMENT 2 A light emitting device 200 according to the second embodiment of the present disclosure differs from the light emitting device 100 according to the first embodiment in that the light emitting element 2 includes a first light emitting portion 21 and a second light emitting portion 22, and is configured such that light emitted from the first light emitting portion 21 is incident on the first light transmitting portion 11 of the light-transmitting member 10, and light emitted from the second light emitting portion 22 is incident on the second light transmitting portion 12 of the light-transmitting member 10. In addition, since the light emitting element 2 includes the first light emitting portion 21 and the second light emitting portion 22, the wiring structure of the wiring board is also different. The light emitting device 200 of the second embodiment will be described below, focusing on the differences from the light emitting device 100 of the first embodiment. Here, Fig. 24 is a perspective view of the light emitting device 200 according to the second embodiment. Fig. 25 is a plan view of the light emitting device 200 according to the second embodiment seen from above. Fig. 26 is a cross-sectional view taken along line XXVI-XXVI in Fig. 25. Fig. 27 is a plan view showing the electrode arrangement of the light emitting element 2, and Fig. 28 is a plan view showing the wiring of the wiring board 50.

[0065] In the light emitting device 200 according to the second embodiment, the light emitting element 2 includes a first light emitting portion 21 and a second light emitting portion 22 on a support substrate S2. The first light emitting portion 21 includes a first semiconductor structure L21 disposed on the support substrate S2, and an element electrode 2e11 provided on the first semiconductor structure L21. The second light emitting portion 22 includes a second semiconductor structure L22 provided on the support substrate S2, and an element electrode 2e21 provided on the second semiconductor structure L22. Here, the first semiconductor structure L21 and the second semiconductor structure L22 are provided separately on the support substrate S2, for example.

[0066] Here, for example, the first light emitting section and the second light emitting section, in other words the first semiconductor structure L21 and the second semiconductor structure L22, may have the same semiconductor structure or may have different semiconductor structures. By providing element electrodes individually for the first semiconductor structure L21 and the second semiconductor structure L22, it is possible to light them independently. In addition, it is also possible to light them collectively by connecting the element electrodes of the first light emitting section and the second light emitting section in series. Even when the first semiconductor structure L21 and the second semiconductor structure L22 emit light of the same emission color, it is possible to emit light of different emission colors from the first light emitting region R1 and the second light emitting region R2 by adjusting the content of phosphor particles and light reflecting particles in the first light transmitting section 11 and the second light transmitting section 12 of the translucent member 10.

[0067] In the light emitting device 200 according to the second embodiment, the electrodes of the light emitting element 2 may be, for example, as shown in Fig. 27, in which p-electrodes 2e12p and 2e22p are provided in the center of the first semiconductor structure L21 and the second semiconductor structure L22, respectively, and n-electrodes 2e11n and 2e21n are provided on both sides of the p-electrodes 2e12p and 2e22p, respectively. Here, Fig. 27 shows an example in which the first semiconductor structure L21 and the second semiconductor structure L22 are separated from each other, but the first semiconductor structure L21 and the second semiconductor structure L22 may have a configuration in which the active layers are separated from each other, but the p-side semiconductor layer or the n-side semiconductor layer is connected.

[0068] In the light-emitting device 200 of embodiment 2, the wiring 52 in the wiring substrate 50 includes, for example, a first wiring 521, a second wiring 522 and a third wiring 523 connected to the first light-emitting section 21, and a fourth wiring 524, a fifth wiring 525 and a sixth wiring 526 connected to the second light-emitting section 22, as shown in FIG. 28.

[0069] The third wiring 523 is disposed at a position facing the p-electrode 2e12p in the region where the first light-emitting unit 21 is mounted. The first wiring 521 is provided at a position facing the n-electrode 2e11n of the first light-emitting unit 21, that is, provided so as to include internal connection parts located on both sides of the third wiring 523 and a first external connection part extending from the mounting part to an end. The second wiring 522 is provided juxtaposed to the first external connection part at one end of the wiring board. Here, the second wiring 522 and the third wiring 523 are connected so as not to be conductive to the first wiring 521, for example, by a conductive member such as a wire or a relay wiring provided on the base material. The fourth wiring 524, the fifth wiring 525, and the sixth wiring 526 are also provided in the region where the second light-emitting unit 22 is mounted, similarly to the first wiring 521, the second wiring 522, and the third wiring 523, respectively. The above describes an example in which the first wiring 521 and the fourth wiring 524, and the third wiring 523 and the sixth wiring 526 are all arranged on the substrate while being electrically separated from each other. However, either the first wiring 521 and the fourth wiring 524 or the third wiring 523 and the sixth wiring 526 may be arranged so as to be electrically connected to each other.

[0070] On the wiring substrate 50 configured as described above, the light-emitting element 2 is mounted such that the p-electrode 2e12p of the first semiconductor structure L21 is connected to the third wiring 523, the n-electrode 2e11n is connected to the first wiring 521, the p-electrode 2e22p of the second semiconductor structure L22 is connected to the sixth wiring 526, and the n-electrode 2e21n is connected to the fourth wiring 524.

[0071] In the light-emitting device 200 of embodiment 2, the light-transmissive member 10 is configured in the same manner as the light-emitting device 100 of embodiment 1, and is arranged so that the first light-transmissive section 11 is located above the first light-emitting section 21 across the support substrate S2, and the second light-transmissive section 12 is located above the second light-emitting section 22 across the support substrate S2.

[0072] The light emitting device 200 of embodiment 2 configured as described above has a translucent member 10 including a first translucent section 11 containing phosphor particles and a second translucent section 12 containing light reflecting particles, and therefore can emit light of different brightness from the first light emitting region R1 and the second light emitting region R2. Furthermore, in the light-emitting device 200 of embodiment 2, the translucent member 10 includes a first translucent section 11 containing phosphor particles and a second translucent section 12 containing light-reflecting particles, and therefore, similar to the light-emitting device 100 of embodiment 1, the first light-emitting region R1 and the second light-emitting region R2 can emit light of the same emission color or light of different emission colors.

[0073] In particular, the light emitting device 200 of embodiment 2 allows the emission color and emission intensity of the first light emitting section 21 and the second light emitting section 22 to be selected as desired, and therefore the difference in brightness and emission color between the first light emitting region R1 and the second light emitting region R2 can be easily increased. Furthermore, since the first light-emitting section 21 and the second light-emitting section 22 can be turned on independently, the luminance of the first light-emitting region R1 or the second light-emitting region R2 can be made substantially zero. Furthermore, since it is possible to select various emission colors and emission intensities of the first light-emitting section 21 and the second light-emitting section 22, it is possible to provide a light-emitting device having a first light-emitting region R1 and a second light-emitting region R2 of desired emission color and emission intensity.

[0074] The light emitting device according to the embodiment of the present disclosure includes, for example, the following aspects. [Section 1] A light-emitting element; a plate-shaped light-transmitting member disposed on the light-emitting element and having a lower surface onto which light emitted from the light-emitting element is incident and an upper surface opposite to the lower surface; having A light-emitting device having an upper surface of the light-transmitting member as a light-emitting surface, The light-transmitting member is A first light transmitting portion including a first sintered body containing phosphor particles and a second light transmitting portion including a second sintered body containing light diffusing particles, The second sintered body has a relative density of 70% or more and 95% or less, The light emitting surface is (i) a first light-emitting region from which light is emitted through the first light-transmitting portion; (ii) a second light-emitting region in which light is emitted through a second light-transmitting portion and has a lower brightness than the first light-emitting region; A light emitting device having the above structure. [Section 2] the second light transmitting portion includes a first layer and a second layer constituted by the second sintered body, Item 2. The light emitting device according to item 1, wherein the second layer has a lower light transmittance than the first layer. [Section 3] the first layer and the first light transmitting portion are integral with each other, 3. The light emitting device according to item 2, wherein the first layer and the first light transmitting portion are formed of the first sintered body. [Section 4] 4. The light emitting device according to item 2 or 3, wherein the first layer constitutes a part of a lower surface of the light-transmitting member, and the second layer constitutes a part of a light emitting surface of the light-transmitting member. [Section 5] 5. The light emitting device according to any one of items 2 to 4, wherein the first layer constitutes a part of one of a lower surface of the translucent member and the light emitting surface of the translucent member, the second layer constitutes a part of the other, and a side surface of the second layer is inclined with respect to the light emitting surface. [Section 6] 6. The light emitting device according to any one of items 1 to 5, wherein the second sintered body includes a base member made of an inorganic material, and the light diffusing particles are contained in the base member and made of an inorganic material. [Section 7] 7. The light emitting device according to item 6, wherein the base member contains aluminum oxide as a main component. [Section 8] Item 8. The light emitting device according to item 6 or 7, wherein the light diffusing member contains yttrium oxide or boron nitride. [Section 9] 9. The light emitting device according to any one of items 1 to 8, further comprising a covering member covering a side surface of the light emitting element and a side surface of the light transmissive member. [Section 10] 10. The light emitting device according to any one of items 1 to 9, further comprising an anti-reflection film covering the light emitting surface. [Section 11] 11. The light emitting device according to any one of items 1 to 10, wherein the light emitting element includes a support substrate and a first light emitting section and a second light emitting section provided on the support substrate, and a boundary between the first light transmitting section and the second light transmitting section on an upper surface of the translucent member is located between the first light emitting section and the second light emitting section. [Section 12] preparing a light emitting element having an upper surface as a light emitting surface; preparing a light-transmitting member including a first light-transmitting portion having a first light incident surface and a first light exit surface, and a second light-transmitting portion having a second light incident surface and a second light exit surface and having a lower light transmittance than the first light-transmitting member; disposing the light-transmitting member on the light-emitting element such that the first light incident surface and the second light incident surface face a light exit surface of the light-emitting element; A method for manufacturing a light emitting device comprising the steps of: [Section 13] The step of preparing the light-transmitting member includes: preparing a light-transmitting substrate made of an inorganic material and having a first main surface and a second main surface opposite the first main surface; forming a recess in the first main surface; a step of disposing a powder containing (i) a base member made of an inorganic material and (ii) light diffusing particles made of an inorganic material in the recess, and sintering the powder to form a sintered portion in the recess having a lower light transmittance than the light-transmitting substrate; A step of dividing the light-transmitting substrate on which the sintered portion is formed to form a light-transmitting member having the first light-transmitting portion made of a part of the light-transmitting substrate and the second light-transmitting portion including a part of the sintered portion and a part of the light-transmitting member; Item 13. A method for producing a light emitting device according to item 12, comprising: [Section 14] Item 14. The method for producing a light emitting device according to item 13, wherein in the step of forming the sintered portion, the sintered portion is formed so as to have a relative density of 70% or more and 95% or less. [Section 15] Item 15. The method for manufacturing a light emitting device according to item 13 or 14, wherein in the step of forming the sintered portion, the powder is sintered by applying pressure to the powder and applying a current thereto. [Section 16] Item 16. The method for manufacturing a light emitting device according to any one of items 13 to 15, wherein in the step of forming the recess, the recess formed has a side surface that slopes from a bottom of the recess toward the first main surface. [Section 17] Item 17. The method for manufacturing a light emitting device according to any one of items 13 to 16, wherein in the step of forming the recess, the recess is formed linearly on the first main surface. [Section 18] Item 18. The method for producing a light emitting device according to any one of Items 13 to 17, wherein the base member contains aluminum oxide as a main component. [Section 19] Item 19. The method for producing a light emitting device according to any one of items 13 to 18, wherein the light diffusing particles include yttrium oxide or boron nitride particles. [Industrial Applicability]

[0075] The light emitting device according to the embodiment of the present disclosure can be suitably used for vehicle lighting such as headlights, etc. In addition, the light emitting device according to the embodiment of the present disclosure can be used as a backlight source for liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements and destination guides, and further, image reading devices in digital video cameras, facsimiles, copy machines, scanners, etc., projector devices, etc. [Explanation of symbols]

[0076] 100, 200 Light emitting device R Light Emitting Area R1 First light emitting area R2 Second light emitting area 1 Light emitting element 1a Light emitting surface of light emitting element 1e, 2e11, 2e21 Element electrodes L1 Semiconductor structure S1, S2 support board 2e12p, 2e22p p electrode 2e11n, 2e21n n electrode 10 Translucent material 11 1st transparent part 11a First sintered body 12 2nd transparent part 121 1st layer 122 2nd layer 12a Second sintered body 17 Joining materials 21 First light emitting part 22 Second light emitting part 40, 50 Wiring board 41 Base material 42, 52 Wiring 421, 521 1st wiring 422, 522 2nd wiring 523 3rd wiring 524 4th wiring 525 5th wiring 526 6th wiring 30 Electronic Components 60 Covering material 70 Anti-reflection coating

Claims

1. A light-emitting element; a plate-shaped light-transmitting member disposed on the light-emitting element and having a lower surface onto which light emitted from the light-emitting element is incident and an upper surface opposite to the lower surface; having A light emitting device having an upper surface of the light-transmitting member as a light emitting surface, The light-transmitting member is The light-transmitting portion includes a first sintered body containing phosphor particles, and a second light-transmitting portion includes a second sintered body containing light-diffusing particles, The second sintered body has a relative density of 70% or more and 95% or less, The light emitting surface is (i) a first light-emitting region from which light is emitted through the first light-transmitting portion; (ii) a second light-emitting region in which light is emitted through a second light-transmitting portion and has a lower brightness than the first light-emitting region; A light emitting device having the above structure.

2. the second light transmitting portion includes a first layer and a second layer constituted by the second sintered body, The light emitting device of claim 1 , wherein the second layer has a lower light transmittance than the first layer.

3. the first layer and the first light transmitting portion are integral with each other, The light emitting device according to claim 2 , wherein the first layer and the first light transmitting portion are formed from the first sintered body.

4. The light emitting device according to claim 2 , wherein the first layer constitutes a part of a lower surface of the light-transmitting member, and the second layer constitutes a part of a light emitting surface of the light-transmitting member.

5. The light-emitting device according to claim 3 , wherein the first layer constitutes a part of one of the lower surface of the translucent member and the light-emitting surface of the translucent member, the second layer constitutes a part of the other, and a side surface of the second layer is inclined with respect to the light-emitting surface.

6. The light emitting device according to claim 1 , wherein the second sintered body includes a base member made of an inorganic material, and the light diffusing particles are contained in the base member and made of an inorganic material.

7. The light emitting device according to claim 6 , wherein the base member contains aluminum oxide as a main component.

8. 8. The light emitting device of claim 7, wherein the light diffusing particles comprise yttrium oxide or boron nitride.

9. 9. The light emitting device according to claim 1, further comprising a cover member covering a side surface of said light emitting element and a side surface of said light transmissive member.

10. 9. The light emitting device according to claim 1, further comprising an anti-reflection film covering the light emitting surface.

11. The light-emitting device according to any one of claims 1 to 8, wherein the light-emitting element includes a support substrate and a first light-emitting section and a second light-emitting section provided on the support substrate, and a boundary between the first light-transmitting section and the second light-transmitting section on an upper surface of the translucent member is located between the first light-emitting section and the second light-emitting section.

12. preparing a light emitting element having an upper surface as a light emitting surface; preparing a light-transmitting member including a first light-transmitting portion having a first light incident surface and a first light exit surface, and a second light-transmitting portion having a second light incident surface and a second light exit surface and having a lower light transmittance than the first light-transmitting member; disposing the light-transmitting member on the light-emitting element such that the first light incident surface and the second light incident surface face a light exit surface of the light-emitting element; A method for manufacturing a light emitting device comprising the steps of:

13. The step of preparing the light-transmitting member includes: preparing a light-transmitting substrate made of an inorganic material and having a first main surface and a second main surface opposite the first main surface; forming a recess in the first major surface; a step of disposing a powder containing (i) a base member made of an inorganic material and (ii) light diffusing particles made of an inorganic material in the recess, and sintering the powder to form a sintered portion in the recess having a lower light transmittance than the light-transmitting substrate; A step of dividing the light-transmitting substrate on which the sintered portion is formed to form a light-transmitting member having the first light-transmitting portion made of a part of the light-transmitting substrate and the second light-transmitting portion including a part of the sintered portion and a part of the light-transmitting member; The method for manufacturing a light emitting device according to claim 12 , comprising:

14. The method for manufacturing a light emitting device according to claim 13 , wherein in the step of forming the sintered portion, the sintered portion is formed so as to have a relative density of 70% or more and 95% or less.

15. The method for manufacturing a light emitting device according to claim 13 , wherein in the step of forming the light transmitting portion, the powder is sintered by applying pressure to the powder and applying a current thereto.

16. The method for manufacturing a light emitting device according to claim 15 , wherein in the step of forming the recess, the recess has a side surface that is inclined from a bottom of the recess toward the first main surface.

17. The method for manufacturing a light emitting device according to claim 16 , wherein in the step of forming the recess, the recess is formed linearly in the first main surface.

18. The method for manufacturing a light emitting device according to claim 13 , wherein the base member contains aluminum oxide as a main component.

19. The method for manufacturing a light emitting device according to claim 18 , wherein the light diffusing particles include yttrium oxide or boron nitride particles.

Images