Current sensor

Abstract

SOLUTION: A current sensor comprises a first lead frame, a signal processing IC, a first magnetoelectric transducer, a second magnetoelectric transducer, and a second lead frame that partially encloses the first and the second magnetoelectric transducers. In plan view, the first and the second magnetoelectric transducers may be arranged facing each other with an intermediate section therebetween that is part of the second lead frame flowing a current in a second direction intersecting a first direction leading from the first magnetoelectric transducer toward the second magnetoelectric transducer. A plurality of first wires, in plan view, may extend in a direction different from the second magnetoelectric transducer side and may be electrically connected to the signal processing IC without crossing the second lead frame. A plurality of second wires, in plan view, may extend in a direction different from the first magnetoelectric transducer side and may be electrically connected to the signal processing IC without crossing the second lead frame.SELECTED DRAWING: Figure 1A

Description

[Technical field]

[0001] The present invention relates to a current sensor. [Background technology]

[0002] Patent document 1 describes the current sensor as comprising: "a primary conductor having an opening extending from the top surface to the bottom surface and through which the current to be measured flows; a lead frame electrically separated from the primary conductor and having a portion overlapping with the opening of the primary conductor; and a magnetic sensor provided on the lead frame at a position overlapping with the opening of the primary conductor and detecting the current to be measured." [Prior art document] [Patent documents] [Patent Document 1] JP 2018-036237 A Summary of the Invention [Problem to be solved by the invention]

[0003] In a primary conductor shaped as in Patent Document 1, the current is split into two paths and flows in the same direction, so the magnetic field penetrating the magnetic sensor may not be effectively increased, and therefore the sensitivity of the magnetic sensor may not be increased, and the S / N ratio may not be effectively increased. [Means for solving the problem]

[0004] A current sensor according to an aspect of the present invention may include a first lead frame having a first terminal portion. The current sensor may include a signal processing IC having a second surface supported on a first surface of the first lead frame and electrically connected to the first lead frame. The current sensor may include a first magneto-electric conversion element and a second magneto-electric conversion element that are configured separately from the signal processing IC, mounted on a first surface opposite to the second surface of the signal processing IC, and output a signal processed by the signal processing IC to the signal processing IC. The current sensor may include a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a part of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magneto-electric conversion element and the second magneto-electric conversion element in a plan view, and through which a measurement current measured by the first magneto-electric conversion element and the second magneto-electric conversion element flows. In a plan view, the first magnetoelectric transducer and the second magnetoelectric transducer may be disposed opposite to each other with an intermediate portion, which is a part of the second lead frame, sandwiched therebetween, through which a current flows in a second direction intersecting a first direction from the first magnetoelectric transducer to the second magnetoelectric transducer. The first magnetoelectric transducer may be electrically connected to the signal processing IC via a plurality of first wires. Each of the plurality of first wires may extend in a direction different from the second magnetoelectric transducer side in a plan view, and may be electrically connected to the signal processing IC without crossing the second lead frame. The second magnetoelectric transducer may be electrically connected to the signal processing IC via a plurality of second wires. Each of the plurality of second wires may extend in a direction different from the first magnetoelectric transducer side in a plan view, and may be electrically connected to the signal processing IC without crossing the second lead frame.

[0005] In the current sensor, the second terminal portion may have a pair of terminals. The second lead frame may have a first portion extending from one of the pair of terminals toward the first terminal portion, a second portion extending from the other of the pair of terminals toward the first terminal portion, and a connecting portion connecting an end of the first portion to an end of the second portion. The first magnetoelectric conversion element may be surrounded by the first portion, the connecting portion, and the second portion in a plan view. The intermediate portion may be the second portion or the connecting portion. A distance between the first magnetoelectric conversion element and the intermediate portion may be shorter than a distance between the first magnetoelectric conversion element and the second lead frame in the second direction. A distance between the second magnetoelectric conversion element and the intermediate portion may be shorter than a distance between the second magnetoelectric conversion element and the second lead frame in the second direction.

[0006] In any of the current sensors, the second lead frame may further have a first extension portion adjacent to the second magneto-electric conversion element, which is joined to the connecting portion or the other of the pair of terminals at only one side when the second portion is the intermediate portion, and which is joined to the first portion at only one side when the connecting portion is the intermediate portion, and a second extension portion adjacent to the second magneto-electric conversion element, which is joined to the first extension portion at only one side and is not joined to other portions of the second lead frame.

[0007] In any one of the current sensors, a width of the intermediate portion in the first direction may be equal to or smaller than a width of the first portion in a direction intersecting with a direction in which the measurement current flows.

[0008] In any of the current sensors, when the intermediate portion is the second portion, the first direction may be a direction intersecting a direction connecting the second terminal portion and the first terminal portion.

[0009] In any one of the current sensors, the width of the connecting portion in the second direction may be less than or equal to the width of the first portion in the first direction.

[0010] In any of the current sensors, the width in the direction from the second terminal portion to the first terminal portion of the signal processing IC may be longer than the width in the direction intersecting, in a plan view, the direction from the second terminal portion to the first terminal portion of the signal processing IC.

[0011] In any of the current sensors, the first lead frame may have an end face on a virtual line passing through the centers of the first magnetoelectric conversion element and the second magnetoelectric conversion element in a plan view.

[0012] In any of the current sensors, when the distance H in the thickness direction between the signal processing IC and the second lead frame is defined as the distance L between the centers of the first magnetoelectric conversion element and the second magnetoelectric conversion element and the thickness Ta of the second lead frame, 0.01 mm < H < 3 × L - 0.5 × Ta may be satisfied.

[0013] In any of the current sensors, when the width Wb in the first direction of the first magnetoelectric conversion element and the second magnetoelectric conversion element is considered, 0.5 × Ta + Wb < L may be satisfied.

[0014] In any of the current sensors, when the height Tb from the first surface of the signal processing IC to the magnetizing surfaces of the first magnetoelectric conversion element and the second magnetoelectric conversion element and the width Wb in the first direction are considered, Tb ≤ 3 × Wb may be satisfied.

[0015] In any of the current sensors, H ≤ 3 × Wb + 0.5 × Ta may be satisfied.

[0016] In any of the current sensors, the first lead frame may have a first stepped portion in which a support portion for supporting the signal processing IC is recessed in a direction away from the second lead frame in the thickness direction.

[0017] In any of the current sensors, the second lead frame may have a second stepped portion in which a facing portion facing the signal processing IC protrudes in a direction away from the signal processing IC in the thickness direction.

[0018] In any one of the current sensors, the second step portion may protrude in a thickness direction from the second terminal portion by more than 0 times and not more than 0.6 times the thickness of the second lead frame.

[0019] In any of the current sensors, the wiring included in the top layer on the first surface side of the signal processing IC may be arranged in a position that does not overlap the first magneto-electric transducer and the second magneto-electric transducer in the thickness direction, or the wiring included in the top layer on the first surface side of the signal processing IC may be arranged in a position that overlaps the first magneto-electric transducer and the second magneto-electric transducer in the thickness direction, and may have a width that allows the first magneto-electric transducer and the second magneto-electric transducer to all overlap in a planar view.

[0020] Any of the current sensors may further include a sealing portion that seals a portion of the first lead frame other than the exposed portion of the first terminal portion, a portion of the second lead frame other than the exposed portion of the second terminal portion, the signal processing IC, the first magneto-electric conversion element, and the second magneto-electric conversion element with molded resin while the second lead frame is spaced apart from the first lead frame, the signal processing IC, the first magneto-electric conversion element, and the second magneto-electric conversion element.

[0021] In any of the current sensors, a first height in the thickness direction of the sealing portion of a surface of the first terminal portion on the same side as the first surface of the signal processing IC at a position where the first terminal portion intersects with a first side of the sealing portion where the first terminal portion is exposed, and a second height in the thickness direction of the sealing portion of a surface of the second terminal portion on the same side as the second surface of the signal processing IC at a position where the second terminal portion intersects with a second side of the sealing portion where the second terminal portion is exposed, may be the same as each other, or the first height may be lower than the second height.

[0022] The first magnetoelectric transducer, the second magnetoelectric transducer, and the intermediate portion may be rectangular in a plan view. In the plan view, there may be no wires or elements in each region between a side surface of each of the first magnetoelectric transducer and the second magnetoelectric transducer facing the intermediate portion and a side surface of the intermediate portion facing each of the first magnetoelectric transducer and the second magnetoelectric transducer.

[0023] A current sensor according to an aspect of the present invention may include a first lead frame having a first terminal portion. The current sensor may include a signal processing IC having a second surface supported on a first surface of the first lead frame and electrically connected to the first lead frame. The current sensor may include a first magneto-electric conversion element and a second magneto-electric conversion element that are configured separately from the signal processing IC, mounted on a first surface opposite to the second surface of the signal processing IC, and output a signal processed by the signal processing IC to the signal processing IC. The current sensor may include a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a part of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magneto-electric conversion element and the second magneto-electric conversion element in a plan view, and through which a measurement current measured by the first magneto-electric conversion element and the second magneto-electric conversion element flows. In a plan view, the first magnetoelectric transducer and the second magnetoelectric transducer may be disposed opposite to each other with an intermediate portion, which is a part of the second lead frame, sandwiched therebetween and which allows a current to flow in a second direction intersecting a first direction from the first magnetoelectric transducer to the second magnetoelectric transducer. The first magnetoelectric transducer may be electrically connected to the signal processing IC via a plurality of first wires that do not cross the second lead frame. The second magnetoelectric transducer may be electrically connected to the signal processing IC via a plurality of second wires that do not cross the second lead frame. The second terminal portion may have a pair of terminals. The second lead frame may have a first portion extending from one of the pair of terminals toward the first terminal portion, a second portion extending from the other of the pair of terminals toward the first terminal portion, and a connecting portion connecting an end of the first portion to an end of the second portion. In a plan view, the first magnetoelectric transducer may be surrounded by the first portion, the connecting portion, and the second portion. The intermediate portion may be the second portion or the connecting portion. A distance between the first magnetoelectric transducer and the intermediate portion may be shorter than a distance between the first magnetoelectric transducer and the second lead frame in the second direction. A distance between the second magnetoelectric transducer and the intermediate portion may be shorter than a distance between the second magnetoelectric transducer and the second lead frame in the second direction.

[0024] In the current sensor, when the intermediate portion is the second portion, the width of the intermediate portion in the first direction may be equal to or smaller than the width of the connecting portion in the second direction. When the intermediate portion is the connecting portion, the width of the intermediate portion in the first direction may be equal to or smaller than the width of the second portion in the second direction.

[0025] A current sensor according to an aspect of the present invention may include a first lead frame having a first terminal portion. The current sensor may include a signal processing IC having a second surface supported on a first surface of the first lead frame and electrically connected to the first lead frame. The current sensor may include a first magneto-electric conversion element and a second magneto-electric conversion element that are configured separately from the signal processing IC, mounted on a first surface opposite to the second surface of the signal processing IC, and output a signal processed by the signal processing IC to the signal processing IC. The current sensor may include a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a part of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magneto-electric conversion element and the second magneto-electric conversion element in a plan view, and through which a measurement current measured by the first magneto-electric conversion element and the second magneto-electric conversion element flows. In a plan view, the first magnetoelectric transducer and the second magnetoelectric transducer may be disposed opposite to each other with an intermediate portion, which is a part of the second lead frame, sandwiched therebetween, through which a current flows in a second direction intersecting a first direction from the first magnetoelectric transducer to the second magnetoelectric transducer. The first magnetoelectric transducer may be electrically connected to the signal processing IC via a plurality of first wires that do not cross the second lead frame. The second magnetoelectric transducer may be electrically connected to the signal processing IC via a plurality of second wires that do not cross the second lead frame. A width of the signal processing IC in a direction from the second terminal portion to the first terminal portion may be longer than a width of the signal processing IC in a direction intersecting a direction from the second terminal portion to the first terminal portion in a plan view.

[0026] In the current sensor, when the height from the first surface of the signal processing IC to the magnetic sensitive surfaces of the first magneto-electric conversion element and the second magneto-electric conversion element is Tb and the width in the first direction is Wb, 0.050 mm≦Tb≦3×Wb may be satisfied.

[0027] A current sensor according to an aspect of the present invention may include a first lead frame having a first terminal portion. The current sensor may include a signal processing IC whose second surface is supported on a first surface of the first lead frame and electrically connected to the first lead frame. The current sensor may include a first magnetoelectric conversion element and a second magnetoelectric conversion element that are configured separately from the signal processing IC, mounted on a first surface of the signal processing IC opposite to the second surface, and output a signal processed by the signal processing IC to the signal processing IC. The current sensor may include a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a part of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magnetoelectric conversion element and the second magnetoelectric conversion element in a plan view, and through which a measurement current measured by the first magnetoelectric conversion element and the second magnetoelectric conversion element flows. The current sensor may include a plurality of first wires that electrically connect the first magnetoelectric conversion element and the signal processing IC. The current sensor may include a plurality of second wires electrically connecting the second magnetoelectric conversion element and the signal processing IC. The current sensor may include a plurality of first pads on the signal processing IC and physically connected to the plurality of first wires, respectively, and a plurality of second pads physically connected to the plurality of second wires, respectively. In a plan view, the first magnetoelectric conversion element and the second magnetoelectric conversion element may be arranged to face each other with an intermediate portion, which is a part of the second lead frame, sandwiched therebetween, the intermediate portion passing a current in a second direction intersecting a first direction from the first magnetoelectric conversion element to the second magnetoelectric conversion element. Each of the plurality of first pads and the plurality of second pads may not overlap the second lead frame in a plan view. The plurality of first pads may be located on the first terminal portion side and / or the second terminal portion side of the first magnetoelectric conversion element in a plan view, and the plurality of second pads may be located on the first terminal portion side and / or the second terminal portion side of the second magnetoelectric conversion element in a plan view.

[0028] The above summary of the invention does not list all of the features of the present invention. Also, subcombinations of these features may also be inventions. [Brief description of the drawings]

[0029] [Figure 1A] 1 is a schematic plan view of the current sensor according to the first embodiment as viewed from the ceiling surface side (Z-axis direction). [Figure 1B] 2 is a cross-sectional view of the current sensor 10 shown in FIG. 1A taken along line AA. [Figure 1C] 13 is a diagram for explaining the positional relationship between the lead frame on the signal terminal side and a magnetoelectric conversion element. FIG. [Figure 2A] 1 is a schematic plan view of the lead frame on the current conductor side and the magnetoelectric transducer as viewed from the ceiling surface side (Z-axis direction). FIG. [Figure 2B] 13 is a schematic plan view of a lead frame on a current conductor side and a magnetoelectric transducer according to a modified example, as viewed from the ceiling surface side (Z-axis direction). FIG. [Figure 2C] 13 is a schematic plan view of a lead frame on a current conductor side and a magnetoelectric transducer according to a modified example, as viewed from the ceiling surface side (Z-axis direction). FIG. [Diagram 3] 10A and 10B are diagrams for explaining the distance between a magnetoelectric transducer and a conductor. [Figure 4] 1C is an enlarged view of the surrounding area of ​​the magnetoelectric conversion element in FIG. 1B. [Diagram 5] 13 is a diagram for explaining the positional relationship between a lead frame on a current conductor side and a magnetoelectric conversion element. FIG. [Figure 6] 10A and 10B are diagrams for explaining the distance between magnetoelectric conversion elements. [Figure 7A] 13 is a schematic plan view of a current sensor according to a second embodiment as viewed from a ceiling surface side (Z-axis direction). FIG. [Figure 7B] 7B is a cross-sectional view taken along line AA of the current sensor shown in FIG. 7A. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention according to the claims. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0031] 1A and 1B show the internal configuration of a semiconductor package that functions as a current sensor 10 according to a first embodiment. Fig. 1A is a schematic plan view of the current sensor 10 according to the first embodiment as viewed from the ceiling surface side (Z-axis direction). Fig. 1B is a cross-sectional view of the current sensor 10 shown in Fig. 1A taken along line AA.

[0032] 1A, the X-axis direction is parallel to the paper and runs from bottom to top, the Y-axis direction is parallel to the paper and runs from right to left, and the Z-axis direction is perpendicular to the paper and runs from back to front. Any one of the X-axis, Y-axis, and Z-axis is orthogonal to the other axes.

[0033] The current sensor 10 includes a signal processing IC 100, a magnetoelectric conversion element 20a, a magnetoelectric conversion element 20b, a lead frame 140 on the current conductor side, a lead frame 150 on the signal terminal side, and a sealing portion .

[0034] The lead frame 140 includes a conductor 141 and a terminal portion 142. The terminal portion 142 includes a pair of terminals 142a, 142b. The conductor 141 is sealed within the sealing portion 130, and partially surrounds the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b together with a part of the terminal portion 142. A measurement current flows through the terminal portion 142 and the conductor 141. The pair of terminals 142a, 142b are physically integrated with the conductor 141, and at least a portion of them is exposed to the outside of the sealing portion 130. The lead frame 140 is an example of a second lead frame.

[0035] The lead frame 140 does not have to be manufactured using a configuration in which the conductors 141 and the terminal portions 142 are each in a multiple-connected form, but may be manufactured using a configuration in which the conductors 141 and the terminal portions 142 are each in an individualized form.

[0036] The lead frame 150 includes an IC hanging part 151 and a terminal part 152. The terminal part 152 includes a plurality of terminals 152a. The IC hanging part 151 is sealed in the sealing part 130 and supports the signal processing IC 100. The plurality of terminals 152a are physically integrated with the IC hanging part 151, and at least a portion of them is exposed to the outside of the sealing part 130. The lead frame 150 is an example of a first lead frame. The lead frames 140 and 150 may be made of a conductive material mainly composed of copper. The X-axis is a direction along the surfaces of the lead frames 140 and 150, and is a direction in which the plurality of terminals 152a are arranged. The Y-axis is a direction along the surfaces of the lead frames 140 and 150, and is a direction intersecting the X-axis. The Y-axis is also a direction in which the plurality of terminals 152a and the pair of terminals 142a and 142b extend in a plan view. The Z axis is a direction intersecting the planes of the lead frames 140 and 150, a direction intersecting the circuit plane of the signal processing IC 100, and also a thickness direction of the sealing portion .

[0037] The pair of terminals 142a, 142b and the multiple terminals 152a are disposed opposite to each other via the signal processing IC 100 in a direction (Y-axis direction) intersecting the thickness direction (Z-axis direction) of the signal processing IC 100. The pair of terminals 142a, 142b are exposed from a side surface 130a of the sealing portion 130. The multiple terminals 152a are exposed from a side surface 130b opposite to the side surface 130a of the sealing portion 130. As shown in FIG. 1B, the pair of terminals 142a, 142b and the multiple terminals 152a may protrude outward from different heights in the thickness direction of the sealing portion 130 on the side surfaces 130a and 130b facing each other of the sealing portion 130. The height of the surface 1521 of the sealing portion 130 on the same side as the surface 100a of the signal processing IC 100 of the multiple terminals 152a at the position where the sealing portion 130 intersects with the side surface 130b may be the same as the height of the surface 1421 of the sealing portion 130 on the same side as the surface opposite to the surface 100a of the signal processing IC 100 of the pair of terminals 142a, 142b at the position where the sealing portion 130 intersects with the side surface 130a. Alternatively, the height of the surface 1521 of the multiple terminals 152a at the position where the sealing portion 130 intersects with the side surface 130b of the sealing portion 130 in the thickness direction (Z axis direction) of the sealing portion 130 may be lower than the height of the surface 1421 of the pair of terminals 142a, 142b at the position where the sealing portion 130 intersects with the side surface 130a of the sealing portion 130 in the thickness direction (Z axis direction).

[0038] The pair of terminals 142a, 142b protrude from the side surface 130a toward the negative side in the Y-axis direction, and are further bent toward the negative side in the Z-axis direction. The multiple terminals 152a protrude from the side surface 130b toward the positive side in the Y-axis direction, and are further bent toward the negative side in the Z-axis direction. The pair of terminals 142a, 142b may protrude from the side surface 130a toward the negative side in the Y-axis direction, and be further bent toward the positive side in the Z-axis direction. The multiple terminals 152a may protrude from the side surface 130b toward the positive side in the Y-axis direction, and be further bent toward the positive side in the Z-axis direction. The pair of terminals 142a, 142b and the multiple terminals 152a may not be bent. That is, the pair of terminals 142a, 142b may protrude from the side surface 130a toward the negative side in the Y-axis direction, and may not be bent toward the positive and negative sides in the Z-axis direction. The multiple terminals 152a do not necessarily have to protrude from the side surface 130b toward the positive side in the Y-axis direction and be bent toward the positive and negative sides in the Z-axis direction.

[0039] The IC hanging part 151 includes a support part 154 that supports the signal processing IC 100. The lead frame 150 may have a step part 155 in which the support part 154 is recessed in a direction (towards the bottom surface of the sealing part 130) away from the conductor 141 in the thickness direction (Z-axis direction). The step part 155 is an example of a first step part. The signal processing IC 100 may be fixed on a surface 154a of the support part 154 via an adhesive layer. The adhesive layer may be a die attach film. The lead frame 140 has a step part 143 in which a facing part facing the signal processing IC 100 protrudes in a direction away from the signal processing IC 100 in the thickness direction. The step part 143 is an example of a second step part. The step part 155 and the step part 143 may be formed by performing a semi-insulating process on the lead frame 150 and the lead frame 140.

[0040] 1C is a diagram for explaining the positional relationship between the lead frame 150 and the magnetoelectric conversion elements 20a and 20b constituting the current sensor 10 according to the first embodiment. As shown in FIG. 1C, a virtual line 156 extending in the X direction from the end face of the IC hanging part 151 on the terminal part 142 side may pass through the center of the magnetoelectric conversion element 20a and the center of the magnetoelectric conversion element 20b in a plan view. Thereby, in the process of manufacturing the current sensor 10, when the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b are arranged, the centers of the elements may pass through the virtual line 156. Therefore, the positional accuracy when the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b are arranged above the signal processing IC 100 can be improved. The virtual line 156 may be defined by a step, a notch, and a through hole formed in the IC hanging part 151, instead of the end face of the IC hanging part 151.

[0041] It is preferable that the step portion 143 protrudes in the thickness direction from the terminal portion 142 by more than 0 times and not more than 0.6 times the thickness Ta of the lead frame 140. By restricting the height of the step portion 143 to this range, it is possible to realize semi-integrated processing with high dimensional accuracy in both the height direction and the planar direction, and as a result of a design that takes manufacturing variations into consideration, it is possible to shorten the distance between the conductor 141 and the signal processing IC 100.

[0042] The magnetoelectric conversion elements 20a, 20b are electrically connected to the signal processing IC 100 via a plurality of wires 22a, 22b. The magnetoelectric conversion elements 20a, 20b are configured separately from the signal processing IC 100, and output a signal to be processed by the signal processing IC 100 to the signal processing IC 100. The signal processing IC 100 is electrically connected to a plurality of terminals 152a via wires 108. The wires 22a, 22b and the wires 108 may be formed of a conductive material mainly composed of Au, Ag, Cu, or Al. As shown in FIG. 1A, the signal processing IC 100 has a plurality of pads 23a, 23b on a surface 100a, and the signal processing IC 100 is electrically connected to the magnetoelectric conversion elements 20a, 20b by connecting the plurality of pads 23a, 23b and the plurality of wires 22a, 22b. The pads 23a are an example of a plurality of first pads, and the pads 23b are an example of a plurality of second pads. The pads 23a connected to the wires 22a and the pads 23b connected to the wires 22b may not overlap the lead frame 140 in a plan view. The pads 23a may be located on the terminal portion 152 side and / or the terminal portion 142 side with respect to the magnetoelectric conversion element 20a in a plan view, and the pads 23b may be located on the terminal portion 152 side and / or the terminal portion 142 side with respect to the magnetoelectric conversion element 20b in a plan view.

[0043] The magnetoelectric conversion elements 20a and 20b may protrude from the surface 100a of the signal processing IC 100 so that the magnetically sensitive surfaces of the magnetoelectric conversion elements 20a and 20b overlap the conductor 141 in a side view. This can increase the sensitivity of the magnetoelectric conversion elements 20a and 20b.

[0044] The magnetoelectric conversion elements 20a, 20b detect a magnetic field in a specific direction that changes according to the measurement current flowing through the conductor 141, and the signal processing IC 100 amplifies a signal according to the magnitude of the magnetic field and outputs the amplified signal via the terminal 152a. The magnetoelectric conversion elements 20a, 20b are made of a compound semiconductor formed on a GaAs substrate, and may be chips cut into a square or rectangular shape when viewed from above in the Z-axis direction.

[0045] The magnetoelectric conversion elements 20a and 20b may have a substrate made of silicon or a compound semiconductor and a magnetoelectric conversion unit provided on the substrate. The thickness of the substrate is adjusted by polishing the surface on the negative side of the Z-axis direction. Since the magnetic field in the Z-axis direction is detected, for example, a horizontal Hall element is suitable for the magnetoelectric conversion elements 20a and 20b. If the magnetoelectric conversion elements 20a and 20b are arranged at a position where they detect a magnetic field in one axis direction on the XY plane, for example, if they are arranged at a position where they detect a magnetic field in the X-axis direction, then a magnetoresistance element or a fluxgate element is suitable for the magnetoelectric conversion elements 20a and 20b.

[0046] The signal processing IC 100 is a large-scale integrated circuit (LSI). The signal processing IC 100 is a signal processing circuit made of a Si monolithic semiconductor formed on a Si substrate. The signal processing circuit processes an output signal corresponding to the magnitude of the magnetic field output from the magnetoelectric conversion elements 20a and 20b. The signal processing circuit corrects the measurement current flowing through the conductor 141 based on the output signal, and outputs an output signal indicating an accurate current value via the terminal 152a. The signal processing circuit reduces noise components contained in the output signal of the magnetoelectric conversion element 20a and the output signal of the magnetoelectric conversion element 20b based on the difference between the output signal of the magnetoelectric conversion element 20a and the output signal of the magnetoelectric conversion element 20b, amplifies the output signal of the magnetoelectric conversion element 20a and the output signal of the magnetoelectric conversion element 20b with the noise components reduced, calculates the current value of the measurement current based on the amplified output signal, and outputs an output signal indicating the current value.

[0047] A width Wy of the signal processing IC 100 in the Y-axis direction is longer than a width Wx of the signal processing IC 100 in the X-axis direction. With this configuration, the wire 108 connecting the signal processing IC 100 and the multiple terminals 152a can be placed away from the conductor 141. This makes it possible to suppress the noise caused by changes in the current flowing through the conductor 141 from affecting the signal output via the wire 108.

[0048] In addition, as long as the effect of noise caused by changes in the current flowing through the conductor 141 on the signal output via the wire 108 is within an acceptable range, the width Wy of the signal processing IC 100 in the Y-axis direction may be less than or equal to the width Wx of the signal processing IC 100 in the X-axis direction.

[0049] The wiring included in the top layer on the surface 100a side of the signal processing IC 100 is preferably arranged at a position that does not overlap the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b in the thickness direction (Z-axis direction). Alternatively, the wiring included in the top layer on the surface 100a side of the signal processing IC 100 is preferably arranged at a position that overlaps the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b in the thickness direction (Z-axis direction) and has a width that allows the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b to overlap in a plan view. This makes it possible to eliminate unevenness in the portion on the surface 100a of the signal processing IC 100 where the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b are arranged. This makes it possible to reliably bond the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b to the surface 100a of the signal processing IC 100. This prevents the magnetoelectric transducers 20a and 20b from peeling off from the surface 100a of the signal processing IC 100, thereby preventing adverse effects on the reliability of the joints between the adjacent wires 22a and 22b and the signal processing IC 100.

[0050] The sealing section 130 seals the magnetoelectric conversion elements 20a, 20b, the conductor 141, the IC hanging section 151, the parts of the terminal portion 142 other than the exposed parts, the parts of the terminal portion 152 other than the exposed parts, the signal processing IC 100, the wires 22a, 22b, and the wires 108 with a molding resin. The lead frame 140 is electrically insulated from the magnetoelectric conversion elements 20a, 20b, and the signal processing IC 100 by the sealing section 130, and there is no interface between the members. Therefore, no discharge occurs along the interface in the usage environment. The molding resin may be made of, for example, an epoxy-based thermosetting resin to which silica has been added, and may be molded into a semiconductor package by transfer molding.

[0051] In the first embodiment, an example will be described in which the current sensor 10 includes two magnetoelectric conversion elements 20a and 20b. However, the current sensor 10 may include one or more magnetoelectric conversion elements.

[0052] 2A is a schematic plan view of the lead frame 140 and magnetoelectric conversion elements 20a, 20b constituting the current sensor 10 according to the first embodiment, as viewed from the ceiling surface side (Z-axis direction). The lead frame 140 has a first portion 1411, a second portion 1412, a connecting portion 1413, and an extension portion 1414. The second portion 1412 is an example of an intermediate portion. The extension portion 1414 is an example of a first extension portion.

[0053] The first portion 1411 extends from the terminal 142a in the Y-axis direction toward the terminal portion 152 (positive direction of the Y-axis). The second portion 1412 extends from the terminal 142b in the Y-axis direction toward the terminal portion 152 (positive direction of the Y-axis). The connecting portion 1413 extends from the first portion 1411 in the X-axis direction intersecting with the Y-axis direction, and is connected to the second portion 1412. The lead frame 140 further includes an extending portion 1414a extending from the extending portion 1414 toward the terminal 142b and spaced apart from the terminal 142b. The extending portion 1414a is an example of a second extending portion. The direction intersecting with the Y-axis direction may be a direction perpendicular to the Y-axis direction, i.e., a direction at an angle of 90 degrees to the Y-axis direction. The direction intersecting with the Y-axis direction may be a direction forming an angle of 80 degrees to 100 degrees with respect to the Y-axis direction, or a direction forming an angle of 85 degrees to 95 degrees with respect to the Y-axis direction.

[0054] The three side surfaces of the magnetoelectric conversion element 20a are surrounded by a first portion 1411, a connecting portion 1413, and a second portion 1412 in a plan view. The three side surfaces of the magnetoelectric conversion element 20b are surrounded by a terminal 142b, a second portion 1412, and an extension portion 1414. The magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b are disposed opposite each other with the second portion 1412 interposed therebetween in a plan view.

[0055] The shape of the lead frame 140 surrounding three side surfaces of the magnetoelectric conversion elements 20a and 20b is not limited to the shape shown in FIG. 2A.

[0056] FIG. 2B is a schematic plan view of the lead frame 140 and the magnetoelectric conversion elements 20a, 20b according to another example of the current sensor 10 according to the first embodiment, as viewed from the ceiling surface side (Z-axis direction).

[0057] The lead frame 140 has a first portion 1411, a second portion 1412, a connecting portion 1413, and an extension portion 1415. The first portion 1411 extends from the terminal 142a in the Y-axis direction toward the terminal portion 152 (positive direction of the Y-axis). The second portion 1412 extends from the terminal 142b in the Y-axis direction toward the terminal portion 152 (positive direction of the Y-axis). The connection portion 1413 extends from the first portion 1411 in the X-axis direction intersecting with the Y-axis direction, and is connected to the second portion 1412. The lead frame 140 further has an extension portion 1415 that extends from the terminal 142b in the Y-axis direction and surrounds the magneto-electric conversion element 20b together with the terminal 142b and the second portion 1412. The second portion 1412 is an example of an intermediate portion. The extension portion 1415 is an example of a first extension portion. The lead frame 140 may further have an extension portion 1415 a that extends from the end of the extension portion 1415 towards the connecting portion 1413 and is spaced apart from the connecting portion 1413 .

[0058] 2A and 2B, the width W2 in the X-axis direction of the second portion 1412 is equal to or smaller than the width W1 in the X-axis direction of the first portion 1411. This allows each of the magnetoelectric conversion elements 20a and 20b to detect a change in a magnetic field caused by a current passing through the relatively narrow second portion 1412. In other words, each of the magnetoelectric conversion elements 20a and 20b can detect a change in a magnetic field caused by a relatively high current density, thereby improving the S / N ratio of the current sensor 10.

[0059] Furthermore, the width W3 of the connecting portion 1413 in the Y-axis direction is equal to or smaller than the width W1 of the first portion 1411 in the X-axis direction. This reduces the overlapping area in the thickness direction between the lead frame 140 and the signal processing IC 100. This makes it possible to make the signal processing IC 100 less susceptible to the effects of noise caused by a voltage change ΔV / Δt when a current flows through the lead frame 140. Furthermore, the width W3 of the connecting portion 1413 in the Y-axis direction may be equal to or larger than the width W2 of the second portion 1412 in the X-axis direction. This allows the current flowing through the second portion 1412 to be concentrated, and the magnetoelectric conversion elements 20a and 20b to detect a change in the magnetic field caused by a relatively high current density, thereby improving the S / N ratio of the current sensor 10.

[0060] FIG. 2C is a schematic plan view of the lead frame 140 and the magnetoelectric conversion elements 20a, 20b according to another example of the current sensor 10 according to the first embodiment, as viewed from the ceiling surface side (Z-axis direction).

[0061] The lead frame 140 has a first portion 1411, a second portion 1412, a connecting portion 1413, and an extension portion 1416. The first portion 1411 extends from the terminal 142a in the Y-axis direction toward the terminal portion 152 (Y-axis positive direction). The second portion 1412 extends from the terminal 142b in the Y-axis direction toward the terminal portion 152 (Y-axis positive direction). The connecting portion 1413 extends from the first portion 1411 in the X-axis direction intersecting with the Y-axis direction, and is connected to the second portion 1412. That is, the connecting portion 1413 connects the first portion 1411 and the second portion 1412. The lead frame 140 further has an extension portion 1416 that extends from the terminal 142a and the terminal 142b in the Y-axis direction and surrounds the magneto-electric conversion element 20b together with the connecting portion 1413. The connecting portion 1413 is an example of an intermediate portion. The extension portion 1416 is an example of a first extension portion. The lead frame 140 may further include an extension portion 1416a that extends from an end of the extension portion 1416 toward another extension portion 1416 and is spaced apart from the other extension portion 1416. The extension portion 1416a is an example of a second extension portion.

[0062] 2C , the relationship in size between the width W1 in the X-axis direction of the first portion 1411 and the width W2 in the X-axis direction of the second portion 1412 may be arbitrary. By making the width W1 in the X-axis direction of the first portion 1411 and the width W2 in the X-axis direction of the second portion 1412 as large as the widths of the terminals 142a and 142b, the resistance value of the lead frame 140 can be reduced while a large cross-sectional area of ​​the heat dissipation path can be ensured, allowing a large current to flow.

[0063] 2C, the width W3 in the Y-axis direction of the connecting portion 1413 is equal to or smaller than the widths W1, W2 in the X-axis direction of the first portion 1411 and the second portion 1412. In this manner, each of the magnetoelectric conversion elements 20a, 20b can detect a change in a magnetic field caused by a current passing through the relatively narrow connecting portion 1413. In other words, each of the magnetoelectric conversion elements 20a, 20b can detect a change in a magnetic field caused by a relatively high current density, thereby improving the S / N ratio of the current sensor 10.

[0064] 2A, 2B, and 2C, by surrounding the magnetoelectric conversion element 20b with the lead frame 140 in the same manner as the magnetoelectric conversion element 20a, the coupling capacitance between the wire 22b and the lead frame 140 can be set to a value close to the coupling capacitance between the wire 22a and the lead frame 140. Therefore, the influence of noise caused by the voltage change ΔV / Δt when a current flows through the lead frame 140 can be reduced.

[0065] Each of the wires 22a extends in a direction different from the magnetoelectric conversion element 20b side in a plan view, and is electrically connected to the signal processing IC 100 without crossing the lead frame 140. Each of the wires 22a extends in a direction different from the direction from the magnetoelectric conversion element 20a to the magnetoelectric conversion element 20b in a plan view, and may be electrically connected to the signal processing IC 100 without crossing the lead frame 140. Each of the wires 22a may extend in a direction different from the direction from the magnetoelectric conversion element 20a to the magnetoelectric conversion element 20b in a plan view. For example, each of the wires 22a extends in a direction different from the straight line connecting the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b in a plan view, and is electrically connected to the signal processing IC 100 without crossing the conductor 141 of the lead frame 140. Each of the multiple wires 22a shown in Figures 2A and 2B may extend in a direction in which a current flows through the second portion 1412, i.e., along the Y-axis direction, in a plan view. Each of the multiple wires 22a shown in Figure 2C may extend in a direction in which a current flows through the connecting portion 1413, i.e., along the X-axis direction, in a plan view. With this configuration, the magnetic sensing surface of the magnetoelectric conversion element 20a can be brought closer to the second portion 1412 or the connecting portion 1413. This can increase the sensitivity of the magnetic sensor and effectively increase the S / N ratio.

[0066] Each of the wires 22b extends in a direction different from the magnetoelectric conversion element 20a side in a plan view, and is electrically connected to the signal processing IC 100 without crossing the lead frame 140. Each of the wires 22b extends in a direction different from the direction from the magnetoelectric conversion element 20b to the magnetoelectric conversion element 20a in a plan view, and may be electrically connected to the signal processing IC 100 without crossing the lead frame 140. Each of the wires 22b may extend in a direction different from the direction from the magnetoelectric conversion element 20b to the magnetoelectric conversion element 20a in a plan view. For example, each of the wires 22b extends in a direction different from the straight line connecting the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b in a plan view, and is electrically connected to the signal processing IC 100 without crossing the conductor 141 of the lead frame 140. Each of the multiple wires 22b shown in Figures 2A and 2B may extend in a direction in which a current flows through the second portion 1412, i.e., along the Y-axis direction, in a plan view. Each of the multiple wires 22b shown in Figure 2C may extend in a direction in which a current flows through the connecting portion 1413, i.e., along the X-axis direction, in a plan view. With this configuration, the magnetic sensing surface of the magnetoelectric conversion element 20b can be brought closer to the second portion 1412 or the connecting portion 1413. This can increase the sensitivity of the magnetic sensor and effectively improve the S / N ratio.

[0067] When the part of the second part 1412 or the connecting part 1413 sandwiched between the magnetoelectric conversion elements 20a and 20b is defined as the intermediate part, the distance between each of the magnetoelectric conversion elements 20a and 20b and the intermediate part can be shortened by extending each of the wires 22a and 22b in a direction not toward the magnetoelectric conversion elements 20a and 20b in a plan view. As shown in Fig. 3, the distance k1 between the magnetoelectric conversion element 20a and the intermediate part is shorter than the distance k2 between the magnetoelectric conversion element 20a and the conductor 141 in the direction in which the wire 22a extends. Also, the distance k3 between the magnetoelectric conversion element 20b and the intermediate part is shorter than the distance k4 between the magnetoelectric conversion element 20b and the lead frame 140 in the direction in which the wire 22b extends.

[0068] 2A, 2B, and 2C, the magnetoelectric transducer 20a and the magnetoelectric transducer 20b are rectangular in plan view. In addition, in FIG. 2A and FIG. 2B, the second portion 1412 is rectangular, and in FIG. 2C, the connecting portion 1413 is rectangular. In addition, in FIG. 2A and FIG. 2B, in the plan view, there are no wires or elements in the respective regions between the side surfaces of the magnetoelectric transducer 20a and the magnetoelectric transducer 20b facing the second portion 1412 and the side surfaces of the second portion 1412 facing the magnetoelectric transducer 20a and the magnetoelectric transducer 20b. In addition, in FIG. 2C, in the plan view, there are no wires or elements in the respective regions between the side surfaces of the magnetoelectric transducer 20a and the magnetoelectric transducer 20b facing the connecting portion 1413 and the side surfaces of the connecting portion 1413 facing the magnetoelectric transducer 20a and the magnetoelectric transducer 20b. With this configuration, the magnetic sensing surfaces of the magnetoelectric conversion elements 20a and 20b can be brought closer to the second portion 1412 or the connecting portion 1413.

[0069] This allows each of the magnetoelectric conversion elements 20a, 20b to easily detect a change in the magnetic field caused by a current flowing through the intermediate portion, and efficiently increases the sensitivity of the magnetoelectric conversion elements 20a, 20b.

[0070] If the sensitivity of the magnetoelectric transducers 20a and 20b satisfies the required sensitivity, the distance k1 between the magnetoelectric transducer 20a and the intermediate portion may be longer than the distance k2 between the magnetoelectric transducer 20a and the conductor 141 in the direction in which the wire extends. Also, the distance k3 between the magnetoelectric transducer 20a and the intermediate portion may be longer than the distance k4 between the magnetoelectric transducer 20b and the lead frame 140 in the direction in which the wire extends.

[0071] Moreover, each of the multiple wires 22a, 22b is electrically connected to the signal processing IC 100 without crossing the lead frame 140. That is, each of the multiple wires 22a, 22b is electrically connected to the signal processing IC 100 without straddling the lead frame 140. Therefore, the length of each of the multiple wires 22a, 22b can be shortened. This reduces the risk of the multiple wires 22a, 22b coming into contact with each other. Also, it is possible to suppress the generation of noise in the output of the magnetoelectric conversion elements 20a, 20b, which is caused by the current flowing through the lead frame 140, which generates an induced electromotive force in each of the multiple wires 22a, 22b.

[0072] If the sensitivity required for the magnetoelectric conversion elements 20a, 20b satisfies the required sensitivity, each of the multiple wires 22a, 22b may be extended in a direction toward the magnetoelectric conversion elements 20b, 20a.

[0073] Here, as shown in Fig. 4, the height Tb from the surface 100a of the signal processing IC 100 to the magnetic sensing surfaces 21a, 21b of the magnetoelectric conversion elements 20a, 20b must be three times or less the width Wb of the magnetoelectric conversion elements 20a, 20b, otherwise the magnetoelectric conversion elements 20a, 20b cannot be stably die-bonded onto the signal processing IC 100. Also, if the magnetoelectric conversion element is a compound semiconductor, it is likely to crack if it is thin. Therefore, Tb is preferably 0.050 mm or more. In other words, it is preferable to satisfy 0.050 mm< Tb ≦ 3 × Wb. The height Tb and width Wb are in mm.

[0074] Also, in order to enhance the sensitivity of the magnetoelectric conversion elements 20a and 20b, as shown in FIG. 5, in side view, the magnetosensitive surfaces 21a and 21b of the magnetoelectric conversion elements 20a and 20b are preferably arranged closer to the center in the thickness direction of the conductor 141 than being separated by half of the thickness Ta of the conductor 141, i.e., 0.5×Ta, from the surface 141b of the conductor 141 facing the signal processing IC 100. Therefore, when the distance between the surface 141b of the conductor 141 and the surface 100a of the signal processing IC 100 is H, it is preferable that H satisfies H≦Tb + 0.5×Ta, that is, H≦3×Wb + 0.5×Ta. The units of the distance H, the height Tb, and the width Wb are mm.

[0075] On the other hand, in plan view, in order to enhance the sensitivity of the magnetoelectric conversion elements 20a and 20b, the distance between the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b needs to secure a distance that allows the conductor 141 to be interposed therebetween. Also, by making the width of the conductor 141 larger than 0.5 times the thickness Ta of the conductor 141, processing with a stable shape becomes possible. Therefore, as shown in FIG. 6, when the distance between the center of the magnetoelectric conversion element 20a and the center of the magnetoelectric conversion element 20b is L, it is preferable that 0.5×Ta + Wb < L is satisfied. The units of the thickness Ta, the width Wb, and the distance L are mm. Thereby, a conductor 141 with a stable dimension between the magnetoelectric conversion element 20a and the magnetoelectric conversion element 20b can be arranged, and the sensitivity of the magnetoelectric conversion elements 20a and 20b can be enhanced.

[0076] Considering the above, it is preferable that 1 / 6×Ta + 1 / 3×H < L, that is, H < 3×L - 0.5×Ta is satisfied. Here, H is an important distance for ensuring withstand voltage even when a high voltage is applied between the conductor 141 and the signal processing IC 100. Considering the tolerance of the step error, H needs to be at least 0.01 mm or more, so it is preferable that 0.01 mm < H < 3×L - 0.5×Ta is satisfied. The units of the distance H, the distance L, and the thickness Ta are mm.

[0077] 7A and 7B show the internal configuration of a semiconductor package that functions as a current sensor 10 according to a second embodiment. Fig. 7A is a schematic plan view of the current sensor 10 according to the second embodiment as viewed from the ceiling surface side (Z-axis direction). Fig. 7B is a cross-sectional view of the current sensor 10 shown in Fig. 7A taken along line AA.

[0078] The current sensor 10 according to the second embodiment differs from the current sensor 10 according to the first embodiment in that the step portion 155 is not provided in the support portion 154. When the plate thickness of the conductor 140 is large and the step portion 143 can be made large by half-piercing processing, or when a large step can be formed by bending processing, the distance between the signal processing IC 100 and the conductor 141 can be secured without providing the step portion 155. The other configurations of the current sensor 10 according to the second embodiment may be the same as those of the current sensor 10 according to the first embodiment. Therefore, the current sensor 10 according to the second embodiment has the same advantages as the current sensor 10 according to the first embodiment. In the primary conductor having the shape as in Patent Document 1, the current is divided into two paths and flows in the same direction, so that the magnetic field penetrating the magnetic sensor may not be effectively increased. Therefore, the sensitivity of the magnetic sensor may not be increased, and the S / N ratio may not be effectively increased. On the other hand, according to the current sensor 10 described above, the sensitivity of the current sensor 10 can be increased and the S / N ratio can be effectively increased.

[0079] Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is clear to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the description of the claims that such modifications and improvements can also be included in the technical scope of the present invention.

[0080] It should be noted that the order of execution of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically stated as "before," "prior to," etc., and may be realized in any order unless the output of a previous process is used in a later process. Even if the operational flow in the claims, specifications, and drawings is explained using "first," "next," etc. for convenience, it does not mean that it is essential to perform the process in this order. [Explanation of symbols]

[0081] 10 Current Sensor 20a, 20b Magnetoelectric conversion element 22a, 22b, 108 Wire 23a, 23b Pads 100 Signal Processing IC 130 Sealing part 140 Lead Frame 141 Conductor 142 Terminal part 142a, 142b terminals 143 Step 150 Lead Frame 151 IC hanging part 152 Terminal part 152a Terminal 154 Support part 155 Step 156 Virtual Line 1411 Part 1 1412 Part 2 1413 Connecting part 1414,1414a, 1415,1415a, 1416, 1416a extension part

Claims

1. a first lead frame having a first terminal portion; a signal processing IC having a second surface supported on a first surface of the first lead frame and electrically connected to the first lead frame; a first magnetoelectric transducer and a second magnetoelectric transducer that are configured separately from the signal processing IC, that are mounted on a first surface of the signal processing IC opposite to the second surface, and that output a signal to be processed by the signal processing IC to the signal processing IC; a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a part of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magneto-electric transducer and the second magneto-electric transducer in a plan view, and through which a measurement current flows that is measured by the first magneto-electric transducer and the second magneto-electric transducer; Equipped with In a plan view, the first magnetoelectric transducer and the second magnetoelectric transducer are disposed opposite to each other with an intermediate portion of the second lead frame interposed therebetween, the intermediate portion passing a current in a second direction intersecting a first direction from the first magnetoelectric transducer to the second magnetoelectric transducer, the first magnetoelectric transducer is electrically connected to the signal processing IC via a plurality of first wires, each of the plurality of first wires extending in a direction different from the second magnetoelectric transducer side in a plan view and electrically connected to the signal processing IC without crossing the second lead frame; A current sensor in which the second magnetoelectric conversion element is electrically connected to the signal processing IC via a plurality of second wires, each of which extends in a direction different from the first magnetoelectric conversion element side in a planar view and is electrically connected to the signal processing IC without crossing the second lead frame.

2. The second terminal portion has a pair of terminals, The second lead frame is a first portion extending from one of the pair of terminals toward the first terminal portion; a second portion extending from the other of the pair of terminals toward the first terminal portion; a connecting portion connecting an end of the first portion to an end of the second portion; having the first magnetoelectric transducer is surrounded by the first portion, the connecting portion, and the second portion in a plan view; the intermediate portion is the second portion or the connecting portion, a distance between the first magnetoelectric transducer and the intermediate portion is shorter than a distance between the first magnetoelectric transducer and the second lead frame in the second direction; The current sensor according to claim 1 , wherein a distance between the second magnetoelectric transducer and the intermediate portion is shorter than a distance between the second magnetoelectric transducer and the second lead frame in the second direction.

3. The second lead frame is a first extension portion adjacent to the second magnetoelectric transducer, the first extension portion being joined to the connecting portion or the other of the pair of terminals when the second portion is the intermediate portion, and being joined to the first portion when the connecting portion is the intermediate portion; a second extension portion that is joined to the first extension portion at only one side and is not joined to other portions of the second lead frame and is adjacent to the second magnetoelectric transducer; The current sensor of claim 2 further comprising:

4. The current sensor according to claim 2 , wherein a width of the intermediate portion in the first direction is equal to or smaller than a width of the first portion in a direction intersecting a direction in which the measurement current flows.

5. The current sensor according to claim 2 , wherein when the intermediate portion is the second portion, the first direction is a direction intersecting a direction connecting the second terminal portion and the first terminal portion.

6. The current sensor according to claim 5 , wherein a width of the connecting portion in the second direction is equal to or smaller than a width of the first portion in the first direction.

7. 2. The current sensor according to claim 1, wherein a width of the signal processing IC in a direction from the second terminal portion to the first terminal portion is longer than a width of the signal processing IC in a direction intersecting the direction from the second terminal portion to the first terminal portion in a planar view.

8. The current sensor according to claim 1 , wherein the first lead frame has an end surface on a virtual line passing through a center of the first magneto-electric transducer and a center of the second magneto-electric transducer in a plan view.

9. A distance H between the signal processing IC and the second lead frame in a thickness direction is expressed as follows, assuming that a distance L between the center of the first magneto-electric transducer and the center of the second magneto-electric transducer is equal to a thickness Ta of the second lead frame: 0.01mm<H<3×L-0.5×Ta The current sensor according to claim 1 ,

10. When the width Wb of the first magneto-electric transducer and the second magneto-electric transducer in the first direction is Wb, 0.5×Ta+Wb<L The current sensor according to claim 9 ,

11. When a height from the first surface of the signal processing IC to the magnetic sensing surfaces of the first magneto-electric transducer and the second magneto-electric transducer is Tb and a width in the first direction is Wb, Tb≦3×Wb The current sensor according to claim 9 ,

12. H≦3×Wb+0.5×Ta The current sensor according to claim 11 ,

13. 2 . The current sensor according to claim 1 , wherein the first lead frame has a support portion supporting the signal processing IC, the support portion having a first step portion recessed in a thickness direction away from the second lead frame.

14. 2 . The current sensor according to claim 1 , wherein the second lead frame has a second stepped portion at a portion facing the signal processing IC that protrudes in a thickness direction away from the signal processing IC.

15. The current sensor according to claim 14 , wherein the second step portion protrudes in a thickness direction from the second terminal portion by more than 0 times and not more than 0.6 times a thickness of the second lead frame.

16. A wiring included in a top layer on the first surface side of the signal processing IC is disposed at a position not overlapping with the first magneto-electric transducer and the second magneto-electric transducer in a thickness direction, or 2. The current sensor according to claim 1, wherein wiring included in a top layer on the first surface side of the signal processing IC is arranged in a position overlapping with the first magneto-electric transducer and the second magneto-electric transducer in the thickness direction, and has a width such that the first magneto-electric transducer and the second magneto-electric transducer all overlap in a planar view.

17. 2. The current sensor of claim 1, further comprising a sealing portion that seals a portion of the first lead frame other than an exposed portion of the first terminal portion, a portion of the second lead frame other than an exposed portion of the second terminal portion, the signal processing IC, the first magneto-electric conversion element, and the second magneto-electric conversion element with a molding resin while the second lead frame is spaced apart from the first lead frame, the signal processing IC, the first magneto-electric conversion element, and the second magneto-electric conversion element.

18. 18. The current sensor of claim 17, wherein a first height in the thickness direction of the sealing portion of a surface of the first terminal portion on the same side as the first surface of the signal processing IC at a position where the first terminal portion intersects with a first side surface of the sealing portion where the exposed first terminal portion intersects with a second side surface of the sealing portion where the exposed second terminal portion intersects with a second side surface of the sealing portion, is the same as or the first height is lower than the second height.

19. the first magnetoelectric transducer, the second magnetoelectric transducer, and the intermediate portion are rectangular in plan view, 2. The current sensor of claim 1, wherein, in a plan view, there are no wires or elements in the regions between the side surfaces of the first magneto-electric transducer and the second magneto-electric transducer facing the intermediate portion and the side surfaces of the intermediate portion facing the first magneto-electric transducer and the second magneto-electric transducer.

20. a first lead frame having a first terminal portion; a signal processing IC having a second surface supported on a first surface of the first lead frame and electrically connected to the first lead frame; a first magnetoelectric transducer and a second magnetoelectric transducer that are configured separately from the signal processing IC, that are mounted on a first surface of the signal processing IC opposite to the second surface, and that output a signal to be processed by the signal processing IC to the signal processing IC; a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a part of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magneto-electric transducer and the second magneto-electric transducer in a plan view, and through which a measurement current flows that is measured by the first magneto-electric transducer and the second magneto-electric transducer; Equipped with In a plan view, the first magnetoelectric transducer and the second magnetoelectric transducer are disposed opposite to each other with an intermediate portion of the second lead frame interposed therebetween, the intermediate portion passing a current in a second direction intersecting a first direction from the first magnetoelectric transducer to the second magnetoelectric transducer, the first magnetoelectric transducer is electrically connected to the signal processing IC via a plurality of first wires that do not cross the second lead frame; the second magnetoelectric transducer is electrically connected to the signal processing IC via a plurality of second wires that do not cross the second lead frame; The second terminal portion has a pair of terminals, The second lead frame is a first portion extending from one of the pair of terminals toward the first terminal portion; a second portion extending from the other of the pair of terminals toward the first terminal portion; a connecting portion connecting an end of the first portion to an end of the second portion; having the first magnetoelectric transducer is surrounded by the first portion, the connecting portion, and the second portion in a plan view; the intermediate portion is the second portion or the connecting portion, a distance between the first magnetoelectric transducer and the intermediate portion is shorter than a distance between the first magnetoelectric transducer and the second lead frame in the second direction; A current sensor, wherein a distance between the second magnetoelectric transducer and the intermediate portion is shorter than a distance between the second magnetoelectric transducer and the second lead frame in the second direction.

21. When the intermediate portion is the second portion, a width of the intermediate portion in the first direction is equal to or smaller than a width of the connecting portion in the second direction, The current sensor of claim 20 , wherein when the intermediate portion is the connecting portion, a width of the intermediate portion in the first direction is equal to or smaller than a width of the second portion in the second direction.

22. a first lead frame having a first terminal portion; a signal processing IC having a second surface supported on a first surface of the first lead frame and electrically connected to the first lead frame; a first magnetoelectric transducer and a second magnetoelectric transducer that are configured separately from the signal processing IC, that are mounted on a first surface of the signal processing IC opposite to the second surface, and that output a signal to be processed by the signal processing IC to the signal processing IC; a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a part of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magneto-electric transducer and the second magneto-electric transducer in a plan view, and through which a measurement current flows that is measured by the first magneto-electric transducer and the second magneto-electric transducer; Equipped with In a plan view, the first magnetoelectric transducer and the second magnetoelectric transducer are disposed opposite to each other with an intermediate portion of the second lead frame interposed therebetween, the intermediate portion passing a current in a second direction intersecting a first direction from the first magnetoelectric transducer to the second magnetoelectric transducer, the first magnetoelectric transducer is electrically connected to the signal processing IC via a plurality of first wires that do not cross the second lead frame; the second magnetoelectric transducer is electrically connected to the signal processing IC via a plurality of second wires that do not cross the second lead frame; A current sensor, wherein the width in a direction from the second terminal portion to the first terminal portion of the signal processing IC is longer than the width in a direction intersecting the direction from the second terminal portion to the first terminal portion of the signal processing IC in a planar view.

23. When a height from the first surface of the signal processing IC to the magnetic sensing surfaces of the first magneto-electric transducer and the second magneto-electric transducer is Tb and a width in the first direction is Wb, 0.050 mm≦Tb≦3×Wb The current sensor of claim 22 , wherein

24. a first lead frame having a first terminal portion; a signal processing IC having a second surface supported on a first surface of the first lead frame and electrically connected to the first lead frame; a first magnetoelectric transducer and a second magnetoelectric transducer that are configured separately from the signal processing IC, that are mounted on a first surface of the signal processing IC opposite to the second surface, and that output a signal to be processed by the signal processing IC to the signal processing IC; a second lead frame having a second terminal portion facing the first terminal portion in a plan view, at least a portion of which is disposed facing the first surface of the signal processing IC, partially surrounding the first magneto-electric transducer and the second magneto-electric transducer in a plan view, and through which a measurement current flows that is measured by the first magneto-electric transducer and the second magneto-electric transducer; a plurality of first wires electrically connecting the first magnetoelectric transducer and the signal processing IC; a plurality of second wires electrically connecting the second magnetoelectric transducer and the signal processing IC; a plurality of first pads on the signal processing IC, the first pads being physically connected to the first wires, respectively, and a plurality of second pads being physically connected to the second wires, respectively; In a plan view, the first magnetoelectric transducer and the second magnetoelectric transducer are disposed opposite to each other with an intermediate portion of the second lead frame interposed therebetween, the intermediate portion passing a current in a second direction intersecting a first direction from the first magnetoelectric transducer to the second magnetoelectric transducer, each of the first pads and the second pads does not overlap with the second lead frame in a plan view; A current sensor, wherein the plurality of first pads are, in a planar view, located on the first terminal portion side and / or the second terminal portion side of the first magneto-electric transducer, and the plurality of second pads are, in a planar view, located on the first terminal portion side and / or the second terminal portion side of the second magneto-electric transducer.

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