Semiconductor device

Abstract

To make it possible to suppress decrease in connection reliability while using a wire made of aluminum.SOLUTION: A semiconductor device 101 includes a substrate 110 having a main surface 110a, a semiconductor element 140, connection pads 121 and 131 disposed apart from the substrate 110, wires 150, 160 having a first end bonded to the main surface electrode 141 / 143 and a second end bonded to the connection pad 121 / 131, and a sealing resin 180. The wire 150, 160 is formed of Al. The connection pad 121, 131 is formed of Cu and includes a base material 124, 134 having an upper surface 126a, 136a facing the same direction as the main surface 110a, and a plating layer 125, 135 formed of Ni and covering the upper surface 126a, 136a of the base material 124, 134. The plating layer 125, 135 is a rough surface plating layer whose surface is rougher than the upper surface 126a, 136a of the base material 124, 134.SELECTED DRAWING: Figure 10

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] The semiconductor device comprises a substrate, a semiconductor element such as a power transistor mounted on the substrate, a drive lead having a drive pad connected to a source electrode of the semiconductor element via a plurality of drive wires, a control lead having a control pad connected to a gate electrode of the semiconductor element via a control wire, and a sealing resin that at least seals the semiconductor element (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-174951 A

[0004] [overview] It has been proposed to use aluminum wires for the drive wires and control wires. In this case, copper is used for the substrate and the drive and control leads, and an intermetallic compound is generated between the wires and the leads. The growth of the intermetallic compound may progress due to heat generated by the operation of the semiconductor device, resulting in a decrease in reliability.

[0005] An object of the present disclosure is to provide a semiconductor device that uses wires made of aluminum and that is capable of suppressing a decrease in connection reliability. A semiconductor device according to one embodiment of the present disclosure comprises a substrate having a main surface, a semiconductor element mounted on the main surface and having a main surface electrode facing in the same direction as the main surface, a connection pad arranged at a distance from the substrate in a first direction parallel to the main surface, a wire having a first end joined to the main surface electrode and a second end joined to the connection pad, and a sealing resin that seals the semiconductor element, the connection pad, and the wire, wherein the wire is made of Al and the connection pad is made of Cu, the semiconductor device further comprises a substrate having a top surface facing in the same direction as the main surface, and a plating layer made of Ni covering the top surface of the substrate, the plating layer being a rough-surface plating layer having a surface rougher than the top surface of the substrate. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic perspective view showing a semiconductor device according to a first embodiment. [Diagram 2] FIG. 2 is a schematic plan view of the semiconductor device of the first embodiment. [Diagram 3] FIG. 3 is a schematic rear view of the semiconductor device of the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view taken along line 4-4 in FIG. [Diagram 5] FIG. 5 is a schematic side view of the semiconductor device of the first embodiment. [Figure 6] FIG. 6 is a partially enlarged plan view showing the semiconductor device of the first embodiment. [Figure 7] FIG. 7 is a partially enlarged plan view showing a semiconductor device according to a modified example of the first embodiment. [Figure 8] FIG. 8 is a partially enlarged plan view showing a semiconductor device according to a modified example of the first embodiment. [Figure 9] FIG. 9 is a schematic perspective view showing a semiconductor device according to the second embodiment. [Figure 10] FIG. 10 is a schematic plan view of the semiconductor device according to the second embodiment. [Figure 11] FIG. 11 is a schematic rear view of the semiconductor device according to the second embodiment. [Figure 12]FIG. 12 is a cross-sectional view taken along line 12-12 of FIG. [Figure 13] FIG. 13 is a schematic side view of the semiconductor device according to the second embodiment. [Figure 14] FIG. 14 is a schematic side view of the semiconductor device according to the second embodiment. [Figure 15] FIG. 15 is a cross-sectional photograph showing the drive pad and the sealing resin.

[0007] [Detailed Description] Hereinafter, embodiments of a semiconductor device will be described with reference to the drawings. The embodiments shown below are examples of configurations and methods for embodying technical ideas, and the materials, shapes, structures, arrangements, dimensions, etc. of each component are not limited to those described below. Various modifications can be made to the following embodiments.

[0008] (First embodiment) A semiconductor device according to a first embodiment will be described with reference to FIGS. 1, the semiconductor device 1 includes a substrate 10, a drive lead 20, a control lead 30, a semiconductor element 40, a drive wire 50, a control wire 60, and a sealing resin 80. The sealing resin 80 seals the semiconductor element 40, the control wire 60, and the drive wire 50. The sealing resin 80 is formed so as to expose portions of the substrate 10, the drive lead 20, and the control lead 30.

[0009] The driving lead 20 has an outer lead 20A protruding from the sealing resin 80, and an inner lead 20B provided in the sealing resin 80 and electrically connected to the outer lead 20A. In this embodiment, the outer lead 20A and the inner lead 20B are integrated into a single component. The control lead 30 has an outer lead 30A protruding from the sealing resin 80, and an inner lead 30B provided in the sealing resin 80 and electrically connected to the outer lead 30A. In this embodiment, the outer lead 30A and the inner lead 30B are integrated into a single component. The semiconductor device 1 of this embodiment is a package of TO (Transistor Outline)-252 specified in the package outline standard (JEITA standard). The semiconductor device 1 is a so-called SIP (Single Inline Package) type in which the outer lead 20A of the driving lead 20 and the outer lead 30A of the control lead 30 each extend from one surface of the sealing resin 80.

[0010] As shown in Fig. 1, the shape of the sealing resin 80 is a rectangular parallelepiped. For convenience, the sealing resin 80 is indicated by a two-dot chain line, and the components inside the sealing resin 80 are indicated by a solid line in Fig. 1, Fig. 2, and Fig. 6.

[0011] The sealing resin 80 is a synthetic resin having electrical insulation properties. In one example, the sealing resin 80 is an epoxy resin. The sealing resin 80 has six surfaces, a first sealing resin side surface 81, a second sealing resin side surface 82, a third sealing resin side surface 83, a fourth sealing resin side surface 84, a sealing resin back surface 85, and a sealing resin top surface 86. The first sealing resin side surface 81 and the second sealing resin side surface 82 face in opposite directions with a gap therebetween. The third sealing resin side surface 83 and the fourth sealing resin side surface 84 face in opposite directions with a gap therebetween. The sealing resin back surface 85 and the sealing resin top surface 86 face in opposite directions with a gap therebetween. In the following description, the direction in which the sealing resin back surface 85 and the sealing resin top surface 86 are arranged is the thickness direction Z, the direction in which the first sealing resin side surface 81 and the second sealing resin side surface 82 are arranged is the vertical direction X, and the direction in which the third sealing resin side surface 83 and the fourth sealing resin side surface 84 are arranged is the horizontal direction Y. The vertical direction X and the horizontal direction Y are directions perpendicular to the thickness direction Z. The vertical direction X is a direction perpendicular to the horizontal direction Y. Here, the thickness direction Z corresponds to the first direction, the vertical direction X corresponds to the second direction, and the horizontal direction Y corresponds to the third direction.

[0012] The shape of the sealing resin 80 is a rectangular parallelepiped. The sealing resin 80 is a synthetic resin having electrical insulation properties. In one example, the sealing resin 80 is an epoxy resin. The sealing resin 80 has six faces, namely, a first sealing resin side face 81, a second sealing resin side face 82, a third sealing resin side face 83, a fourth sealing resin side face 84, a sealing resin back face 85, and a sealing resin top face 86. The first sealing resin side face 81 and the second sealing resin side face 82 face in opposite directions with a gap therebetween. The third sealing resin side face 83 and the fourth sealing resin side face 84 face in opposite directions with a gap therebetween. The sealing resin back face 85 and the sealing resin top face 86 face in opposite directions with a gap therebetween. In the following description, the direction in which the sealing resin back surface 85 and the sealing resin top surface 86 are arranged is referred to as the thickness direction Z, the direction in which the first sealing resin side surface 81 and the second sealing resin side surface 82 are arranged is referred to as the vertical direction X, and the direction in which the third sealing resin side surface 83 and the fourth sealing resin side surface 84 are arranged is referred to as the horizontal direction Y. The vertical direction X and the horizontal direction Y are directions perpendicular to the thickness direction Z. The vertical direction X is a direction perpendicular to the horizontal direction Y. Here, the vertical direction X corresponds to the first direction, and the horizontal direction Y corresponds to the second direction.

[0013] FIG. 2 is a view of the semiconductor device 1 as viewed from a sealing resin top surface 86 in the thickness direction Z. 2, when the semiconductor device 1 is viewed from a sealing resin top surface 86 in the thickness direction Z, the shape of the sealing resin 80 is a substantially rectangular shape with a long side direction along the vertical direction X and a short side direction along the horizontal direction Y. Hereinafter, the view from the thickness direction Z will be referred to as a plan view. In the plan view, the first sealing resin side surface 81 and the second sealing resin side surface 82 are side surfaces that extend along the horizontal direction Y, and the third sealing resin side surface 83 and the fourth sealing resin side surface 84 are side surfaces that extend along the vertical direction X.

[0014] The substrate 10 has a main surface 10a and a back surface 10b (see FIG. 3) that face in opposite directions in the thickness direction Z. The main surface 10a faces the same direction as the sealing resin top surface 86, and the back surface 10b faces the same direction as the sealing resin back surface 85. The substrate 10 is made of, for example, Cu (copper). In this embodiment, "made of Cu" means that the substrate 10 is made of Cu or an alloy containing Cu. The substrate 10 has a flat substrate main body 11 and lead portions 16. In this embodiment, the substrate main body 11 and the lead portions 16 are integrated into a single component.

[0015] The substrate main body 11 can be divided into an inner main body 12 covered with a sealing resin 80, and a protruding portion 13 protruding from the sealing resin 80. The inner main body 12 and the protruding portion 13 are adjacent to each other in the vertical direction X. The protruding portion 13 protrudes in the vertical direction X from a first sealing resin side surface 81. In this embodiment, the size of the protruding portion 13 in the horizontal direction Y is smaller than the size of the inner main body 12 in the horizontal direction Y. The size of the protruding portion 13 in the horizontal direction Y can be changed arbitrarily. In one example, the size of the protruding portion 13 in the horizontal direction Y may be equal to the size of the inner main body 12 in the horizontal direction Y.

[0016] In a plan view, the inner main body portion 12 is disposed such that the center in the vertical direction X is closer to the first sealing resin side surface 81 than the center in the vertical direction X of the sealing resin 80. The inner main body portion 12 has a main surface 12a, a back surface 12b (see FIG. 3), a first side surface 12c, a second side surface 12d, and a third side surface 12e. The main surface 12a and the back surface 12b face opposite each other in the thickness direction Z. The main surface 12a constitutes a part of the main surface 10a of the substrate 10, and the back surface 12b constitutes the back surface 10b of the substrate 10. Therefore, the main surface 12a faces the sealing resin top surface 86 side, and the back surface 12b faces the sealing resin back surface 85 side. In addition, the first side surface 12c faces the second sealing resin side surface 82, the second side surface 12d faces the third sealing resin side surface 83, and the third side surface 12e faces the fourth sealing resin side surface 84. The first side surface 12c extends along the horizontal direction Y. The second side surface 12d and the third side surface 12e face each other with a gap therebetween in the horizontal direction Y. The second side surface 12d and the third side surface 12e extend along the vertical direction X.

[0017] A narrow width portion 14 is formed at the end of the inner main body portion 12 on the protruding portion 13 side. The narrow width portion 14 is formed by a recess 14a recessed from the second side surface 12d toward the fourth sealing resin side surface 84 side in the horizontal direction Y, and a recess 14b recessed from the third side surface 12e toward the third sealing resin side surface 83 side in the horizontal direction Y. The size of the narrow width portion 14 in the horizontal direction Y is smaller than the size of the portion of the inner main body portion 12 other than the narrow width portion 14 in the horizontal direction Y. The size of the narrow width portion 14 in the horizontal direction Y is also smaller than the size of the protruding portion 13 in the horizontal direction Y. The narrow width portion 14 is provided so as to be adjacent to the first sealing resin side surface 81 of the sealing resin 80 in the vertical direction X. The narrow width portion 14 is provided with a through hole 15 penetrating the narrow width portion 14 in the thickness direction Z. The shape of the through hole 15 in a plan view is an ellipse with the horizontal direction Y being the longitudinal direction.

[0018] The inner main body portion 12 has flange portions 19a, 19b protruding from the main body side surfaces of the inner main body portion 12. The flange portion 19a protrudes from the second side surface 12d of the inner main body portion 12 toward the third sealing resin side surface 83. The flange portion 19b protrudes from the third side surface 12e of the inner main body portion 12 toward the fourth sealing resin side surface 84.

[0019] Each of the flange portions 19a, 19b is provided so as to be flush with the main surface 12a of the inner main body portion 12. Therefore, the main surface 10a of the substrate 10 is constituted by the main surface 12a of the inner main body portion 12 and the flange portions 19a, 19b. Moreover, each of the flange portions 19a, 19b is provided so as to be closer to the main surface 12a than the back surface 12b of the inner main body portion 12. Therefore, the back surface 10b of the substrate 10 is constituted by the back surface 12b of the inner main body portion 12. These flange portions 19a, 19b suppress separation between the substrate 10 and the sealing resin 80.

[0020] 3, the back surface 10b of the substrate 10 (back surface 12b of the inner main body portion 12) is exposed from the sealing resin back surface 85. This allows heat from the substrate 10 to be dissipated to the outside of the semiconductor device 1. The sealing resin 80 fills the recesses 14a, 14b and the through-holes 15 of the narrow width portion 14 of the inner main body portion 12. This further prevents the substrate 10 and the sealing resin 80 from being separated.

[0021] 2 and 4, the lead portion 16 extends from the end portion on the first side surface 12c side of the inner main body portion 12 toward the second sealing resin side surface 82 and protrudes from the second sealing resin side surface 82. The lead portion 16 can be divided into a terminal portion 17 protruding from the second sealing resin side surface 82, and a connecting portion 18 connecting the terminal portion 17 and the inner main body portion 12.

[0022] 2, the connecting portion 18 is located on the second side surface 12d side from the center of the inner main body portion 12 in the lateral direction Y. The connecting portion 18 is continuous with the flange portion 19a. That is, the thickness of the portion of the connecting portion 18 connected to the inner main body portion 12 is thicker than the thicknesses of the flange portions 19a and 19b and thinner than the thickness of the inner main body portion 12.

[0023] As shown in FIG. 2 and FIG. 4, the connecting portion 18 has an inclined portion 18a. The inclined portion 18a is inclined toward the sealing resin top surface 86 from the first side surface 12c of the inner main body portion 12 toward the second sealing resin side surface 82. An intermediate portion 18b between the inclined portion 18a and the terminal portion 17 of the connecting portion 18 is located closer to the sealing resin top surface 86 than the main surface 12a of the inner main body portion 12. In a plan view, the intermediate portion 18b has a bent portion 18c that is bent toward the fourth sealing resin side surface 84. A portion of the intermediate portion 18b that contacts the second sealing resin side surface 82 is located in the center of the second sealing resin side surface 82 in the horizontal direction Y.

[0024] The terminal portion 17 protrudes from the center of the second sealing resin side surface 82 in the lateral direction Y. In the thickness direction Z, the position of the terminal portion 17 is the same as the position of the intermediate portion 18b. That is, the terminal portion 17 is located closer to the sealing resin top surface 86 than the main surface 12a of the inner main body portion 12.

[0025] 2, in a plan view, the drive lead 20 and the control lead 30 are arranged closer to the second sealing resin side surface 82 of the sealing resin 80 than the substrate 10, while being spaced apart in the vertical direction X with respect to the substrate 10. The drive lead 20 and the control lead 30 are arranged while being spaced apart from each other in the horizontal direction Y. A lead portion 16 is arranged between the drive lead 20 and the control lead 30 in the horizontal direction Y.

[0026] The drive lead 20 has a drive pad 21, a drive terminal 22, and a connecting portion 23 that connects the drive pad 21 and the drive terminal 22. The drive pad 21 and the connecting portion 23 form an inner lead 20B, and the drive terminal 22 forms an outer lead 20A. The drive pad 21 and the connecting portion 23 are arranged between the substrate 10 and the second sealing resin side surface 82 in the vertical direction X. The drive pad 21 and the connecting portion 23 are arranged on the fourth sealing resin side surface 84 side in the horizontal direction Y from the center of the sealing resin 80 in the horizontal direction Y. In this embodiment, the drive lead 20 is made of Cu. That is, the drive lead 20 is formed of the same material as the substrate 10.

[0027] The shape of the drive pad 21 in plan view is a rectangle with its long side in the horizontal direction Y and its short side in the vertical direction X. The drive pad 21 has a first end 21a and a second end 21b which are both ends in the horizontal direction Y. As shown in FIG. 5, the drive pad 21 is located closer to the sealing resin top surface 86 than the main surface 12a of the inner main body portion 12 in the thickness direction Z. The drive pad 21 is also located closer to the sealing resin top surface 86 than the main surface 40a of the semiconductor element 40 in the thickness direction Z. As shown in FIGS. 4 and 5, in this embodiment, the drive pad 21 is located at the same position as the middle portion 18b of the lead portion 16 in the thickness direction Z.

[0028] 2, the connecting portion 23 is continuous with the end portion of the drive pad 21 on the second sealing resin side surface 82 side. The connecting portion 23 is located closer to the fourth sealing resin side surface 84 than the center portion of the drive pad 21 in the horizontal direction Y. The drive terminal 22 constitutes a source terminal. As shown in FIG. 5, the drive terminal 22 protrudes from the first inclined surface 82a of the second sealing resin side surface 82.

[0029] As shown in FIG. 2, the control lead 30 has a control pad 31, a control terminal 32, and a connecting portion 33 that connects the control pad 31 and the control terminal 32. The control pad 31 and the connecting portion 33 form an inner lead 30B, and the control terminal 32 forms an outer lead 30A. The control pad 31 and the connecting portion 33 are disposed between the substrate 10 and the second sealing resin side surface 82 in the vertical direction X. The control pad 31 and the connecting portion 33 are disposed closer to the third sealing resin side surface 83 than the center of the sealing resin 80 in the horizontal direction Y. In this embodiment, the control lead 30 is made of Cu. That is, the control lead 30 is formed of the same material as the substrate 10 and the drive lead 20.

[0030] The shape of the control pad 31 in plan view is a substantially rectangular shape with the long side in the horizontal direction Y and the short side in the vertical direction X. The control pad 31 has a first end 31a and a second end 31b, which are both ends in the horizontal direction Y. The size of the control pad 31 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. The control pad 31 is located closer to the sealing resin top surface 86 than the main surface 12a of the inner main body portion 12 in the thickness direction Z. The control pad 31 is also located closer to the sealing resin top surface 86 than the main surface 40a of the semiconductor element 40 in the thickness direction Z. In this embodiment, the control pad 31 is located at the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0031] The connecting portion 33 is continuous with the end portion of the control pad 31 on the second sealing resin side surface 82 side. The connecting portion 33 is located closer to the third sealing resin side surface 83 of the control pad 31 in the lateral direction Y. The control terminal 32 constitutes a gate terminal. The control terminal 32 protrudes from the first inclined surface 82a of the second sealing resin side surface 82.

[0032] The drive pad 21 has a connection surface 24 facing in the same direction as the main surface 10a of the substrate 10. A plating layer 71 is formed on the connection surface 24 to cover a part of the connection surface 24. The plating layer 71 is made of, for example, Ni (nickel). Made of Ni means that the plating layer 71 is made of Ni or an alloy containing Ni. The plating layer 71 is formed in the center of the drive pad 21 in the short side direction, that is, the vertical direction X of the drive pad 21. The plating layer 71 also extends from the first end 21a to the second end 21b of the drive pad 21 in the long side direction, that is, the horizontal direction Y of the drive pad 21. Therefore, the connection surface 24 of the drive pad 21 has a portion 24a covered by the plating layer 71 and a portion 24b exposed from the plating layer 71.

[0033] The control pad 31 has a connection surface 34 facing in the same direction as the main surface 10a of the substrate 10. A plating layer 72 is formed on the connection surface 34 to cover a part of the connection surface 34. The plating layer 72 is made of, for example, Ni. Made of Ni means that the plating layer 72 is made of Ni or an alloy containing Ni. The plating layer 72 is formed in the center of the control pad 31 in the short side direction, that is, the vertical direction X, of the control pad 31. The plating layer 72 also extends from the first end 31a to the second end 31b of the control pad 31 along the long side direction, that is, the horizontal direction Y, of the control pad 31. Therefore, the connection surface 34 of the control pad 31 has a portion 34a covered by the plating layer 72 and a portion 34b exposed from the plating layer 72.

[0034] In this embodiment, the plating layer 71 formed on the drive pad 21 and the plating layer 72 formed on the control pad 31 are at the same position in the vertical direction X. Furthermore, in the vertical direction X, the width W71 of the plating layer 71 formed on the drive pad 21 is equal to the width W72 of the plating layer 72 formed on the control pad 31. Therefore, the plating layer 71 formed on the drive pad 21 and the plating layer 72 formed on the control pad 31 overlap each other when viewed from the horizontal direction Y.

[0035] In this embodiment, the end of the intermediate portion 18b of the lead portion 16 on the side of the inclined portion 18a is located at the same height as the drive pad 21 and the control pad 31. In this embodiment, for example, the plating layers 71, 72 are formed on the upper surface of the intermediate portion 18b, so that a plating layer 73 overlapping the plating layers 71, 72 is formed on the upper surface of the intermediate portion 18b when viewed from the lateral direction Y.

[0036] 4 and 5, the semiconductor element 40 is mounted on the main surface 12a of the inner main body portion 12 by solder SD. As shown in Fig. 2, in this embodiment, the semiconductor element 40 is disposed in the center of the inner main body portion 12. The semiconductor element 40 and the drive pad 21 are also offset in the vertical direction X. The semiconductor element 40 and the control pad 31 are also offset in the vertical direction X.

[0037] The semiconductor element 40 is a silicon carbide (SiC) chip. In this embodiment, a SiCMOSFET (metal-oxide-semiconductor field-effect transistor) is used as the semiconductor element 40. The semiconductor element 40 (SiCMOSFET) is an element capable of high-speed switching. The switching frequency is, for example, 1 kHz or more and several hundred kHz or less.

[0038] The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is, for example, a square shape. As shown in FIG. 2 and FIG. 4, the semiconductor element 40 has a main surface 40a, a back surface 40b, and a plurality of side surfaces 40c to 40f. The main surface 40a and the back surface 40b face in opposite directions to each other in the thickness direction Z. The main surface 40a faces the sealing resin top surface 86. That is, the main surface 40a faces the same direction as the main surface 10a of the substrate 10. The back surface 40b faces the sealing resin back surface 85. The back surface 40b faces the main surface 12a of the inner main body portion 12. The side surface 40c faces the first sealing resin side surface 81, the side surface 40d faces the second sealing resin side surface 82, the side surface 40e faces the third sealing resin side surface 83, and the side surface 40f faces the fourth sealing resin side surface 84.

[0039] A main surface side driving electrode 41 and a control electrode 43 are formed on the main surface 40a. The main surface side driving electrode 41 and the control electrode 43 constitute the main surface electrodes formed on the main surface 40a of the semiconductor element 40. A back surface side driving electrode 42 (see FIG. 4) is formed on the back surface 40b. In this embodiment, the main surface side driving electrode 41 constitutes the source electrode, and the back surface side driving electrode 42 constitutes the drain electrode. The control electrode 43 constitutes the gate electrode. The back surface side driving electrode 42 is electrically connected to the inner main body portion 12 by solder SD. The solder SD is, for example, lead solder.

[0040] The semiconductor element 40 has a passivation film formed on the main surface 40a. The passivation film has openings formed therein that expose the electrodes on the main surface 40a side of the semiconductor element 40 as the main surface side drive electrode 41 and the control electrode 43.

[0041] As shown in FIGS. 1 and 2, the semiconductor device 1 includes one drive wire 50 and one control wire 60. The drive wire 50 and the control wire 60 are electrically connected to each other. In this embodiment, the drive wire 50 and the control wire 60 are made of the same metal. In this embodiment, the drive wire 50 and the control wire 60 are made of Al (aluminum). "Made of Al" means that the drive wire 50 and the control wire 60 are made of Al or an alloy containing Al.

[0042] The driving wire 50 has a circular cross section perpendicular to the long axis direction near the center. The control wire 60 has a circular cross section perpendicular to the long axis direction near the center. The wire diameter of the driving wire 50 is larger than the wire diameter of the control wire 60. In other words, the driving wire 50 is a thick aluminum wire. The wire diameter of the driving wire 50 is, for example, 200 μm or more and 600 μm or less. The wire diameter of the control wire 60 is, for example, 40 μm or more and 100 μm or less.

[0043] A first end 51 of the drive wire 50 is joined to the main surface side drive electrode 41 of the semiconductor element 40, and a second end 52 of the drive wire 50 is joined to a plating layer 71 covering a part of the connection surface 24 of the drive pad 21. The drive wire 50 is joined to the main surface side drive electrode 41 and the drive pad 21 by, for example, ultrasonic bonding. In this embodiment, the joint portion 53 of the second end 52 of the drive wire 50 has a portion 53a joined to the upper surface of the plating layer 71 and a portion 53b joined to a portion 24b of the connection surface 24 of the drive pad 21 exposed from the plating layer 71. As shown in FIG. 6, the area of ​​the portion 53a of the upper surface of the plating layer 71 where the second end 52 of the drive wire 50 and the plating layer 71 are joined is equal to or larger than the area of ​​a cross section perpendicular to the long axis direction of the drive wire 50. That is, the width W71 of the plating layer 71 in the vertical direction X is set so that the bonding area between the plating layer 71 and the driving wire 50 bonded to the plating layer 71 is equal to or larger than the cross-sectional area of ​​the driving wire 50. Note that, although an example in which the bonding portion 53 has the portion 53a and the portion 53b is shown in the present embodiment, the width W71 of the plating layer 71 may be set so that the entire bonding portion 53 is bonded to the plating layer 71.

[0044] 1 and 2, a first end 61 of the control wire 60 is bonded to the control electrode 43 of the semiconductor element 40, and a second end 62 of the control wire 60 is bonded to a plating layer 72 covering a part of the connection surface 34 of the control pad 31. The control wire 60 is bonded to the control electrode 43 and the control pad 31 by, for example, ultrasonic bonding. As shown in FIG. 6, in this embodiment, a bonding portion 63 of the second end 62 of the control wire 60 is bonded only to the upper surface of the plating layer 72. In other words, the width W72 of the plating layer 72 in the vertical direction X is set so that the bonding portion 63 of the second end 62 of the control wire 60 to be bonded does not protrude.

[0045] [Effect] The operation of this embodiment will be described. In the semiconductor device 1 of this embodiment, a semiconductor element 40 is mounted on the main surface 10a of a substrate 10, and plating layers 71, 72 made of Ni are formed on the connection surfaces 24, 34 of the drive pad 21 and the control pad 31 made of Cu, covering a part of the connection surfaces 24, 34. A first end 51 of a drive wire 50 made of Al is joined to the main surface side drive electrode 41 of the semiconductor element 40, and a second end 52 of the drive wire 50 is joined to the plating layer 71 on the connection surface 24 of the drive pad 21. A first end 61 of a control wire 60 made of Al is joined to the control electrode 43 of the semiconductor element 40, and a second end 62 of the control wire 60 is joined to the plating layer 72 on the connection surface 34 of the control pad 31. The semiconductor element 40, the drive pad 21 and the control pad 31, the plating layers 71, 72, the drive wire 50 and the control wire 60 are sealed with a sealing resin 80.

[0046] The connection surface 24 of the drive pad 21 has a portion 24a covered with a plating layer 71 and a portion 24b exposed from the plating layer 71. The plating layer 71 made of Ni prevents the drive wire 50 from being separated from the drive pad 21. When the drive wire 50 made of Al is directly bonded to the drive pad 21 made of Cu, the intermetallic compound formed between the drive wire 50 and the drive pad 21 grows due to heat, causing the drive wire 50 to be separated from the drive pad 21, etc. Therefore, the plating layer 71 made of Ni prevents the generation of intermetallic compounds and prevents the drive wire 50 from being separated from the drive pad 21.

[0047] The portion 24b of the connection surface 24 of the drive pad 21 exposed from the plating layer 71 is the surface of the drive pad 21 made of Cu, and has good adhesion to the sealing resin 80. Therefore, this portion 24b suppresses peeling of the sealing resin 80 from the drive pad 21. If the sealing resin 80 peels off from the drive pad 21, the peeling may cause the drive wire 50 joined to the drive pad 21 to break. Therefore, the portion 24b exposed from the plating layer 71 suppresses peeling of the sealing resin 80 from the drive pad 21, and suppresses breakage of the drive wire 50.

[0048] The connection surface 34 of the control pad 31 has a portion 34a covered with the plating layer 72 and a portion 34b exposed from the plating layer 72. The plating layer 72 made of Ni prevents the control wire 60 from being separated from the control pad 31. When the control wire 60 made of Al is directly bonded to the control pad 31 made of Cu, the intermetallic compound formed between the control wire 60 and the control pad 31 grows due to heat, causing the control wire 60 to be separated from the control pad 31, etc. Therefore, the plating layer 72 made of Ni prevents the generation of intermetallic compounds and prevents the control wire 60 from being separated from the control pad 31.

[0049] The portion 34b of the connection surface 34 of the control pad 31 exposed from the plating layer 72 is the surface of the control pad 31 made of Cu, and has good adhesion to the sealing resin 80. Therefore, this portion 34b suppresses peeling of the sealing resin 80 from the control pad 31. If the sealing resin 80 peels off from the control pad 31, the peeling may cause the control wire 60 joined to the control pad 31 to break. Therefore, the portion 34b exposed from the plating layer 72 suppresses peeling of the sealing resin 80 from the control pad 31, and suppresses breakage of the control wire 60.

[0050] In the semiconductor device 1 equipped with a semiconductor element 40 including SiC, a large current is passed through it, so a thick drive wire 50 made of Al is used between the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21. When wires such as Au (gold) or Cu are used, multiple wires must be connected according to the current, which increases the number of steps for connection and the pad area, i.e., increases the size of the semiconductor device. In contrast, the semiconductor device 1 of this embodiment can pass the required current through a single drive wire 50, suppressing increases in the number of steps and size.

[0051] According to the semiconductor device 1 of this embodiment, the following effects can be obtained. (1) A semiconductor element 40 is mounted on the main surface 10a of the substrate 10, and plating layers 71, 72 made of Ni are formed on the connection surfaces 24, 34 of the drive pad 21 and the control pad 31 made of Cu, covering a part of the connection surfaces 24, 34. A first end 51 of a drive wire 50 made of Al is joined to the main surface side drive electrode 41 of the semiconductor element 40, and a second end 52 of the drive wire 50 is joined to the plating layer 71 on the connection surface 24 of the drive pad 21. A first end 61 of a control wire 60 made of Al is joined to the control electrode 43 of the semiconductor element 40, and a second end 62 of the control wire 60 is joined to the plating layer 72 on the connection surface 34 of the control pad 31. The semiconductor element 40, the drive pad 21 and the control pad 31, the plating layers 71, 72, the drive wire 50 and the control wire 60 are sealed with a sealing resin 80. The plating layer 72 made of Ni can prevent the control wire 60 from being separated from the control pad 31. The portion 24b exposed from the plating layer 71 at the connection surface 24 of the drive pad 21 has good adhesion to the sealing resin 80, and can prevent the sealing resin 80 from peeling off from the drive pad 21, thereby preventing the drive wire 50 from being broken. Furthermore, the plating layer 71 made of Ni can prevent the drive wire 50 from being separated from the drive pad 21. The portion 24b exposed from the plating layer 71 at the connection surface 34 of the drive pad 21 has good adhesion to the sealing resin 80, and can prevent the sealing resin 80 from peeling off from the drive pad 21, thereby preventing the drive wire 50 from being broken.

[0052] Second embodiment The semiconductor device according to the second embodiment will be described with reference to FIGS. 9, the semiconductor device 101 includes a substrate 110, a drive lead 120, a control lead 130, a semiconductor element 140, a drive wire 150, a control wire 160, and a sealing resin 180. The sealing resin 180 seals the semiconductor element 140, the control wire 160, and the drive wire 150. The sealing resin 180 is formed so as to expose portions of the substrate 110, the drive lead 120, and the control lead 130.

[0053] The driving lead 120 has an outer lead 120A protruding from the sealing resin 180, and an inner lead 120B provided in the sealing resin 180 and electrically connected to the outer lead 120A. In this embodiment, the outer lead 120A and the inner lead 120B are integrated into a single component. The control lead 130 has an outer lead 130A protruding from the sealing resin 180, and an inner lead 130B provided in the sealing resin 180 and electrically connected to the outer lead 130A. In this embodiment, the outer lead 130A and the inner lead 130B are integrated into a single component. The semiconductor device 101 of this embodiment is a package of TO (Transistor Outline)-252 specified in the package outline standard (JEITA standard). In addition, the semiconductor device 101 is a so-called SIP (Single Inline Package) type in which the outer lead 120A of the driving lead 120 and the outer lead 130A of the control lead 130 each extend from one surface of the sealing resin 180.

[0054] As shown in Fig. 9, the shape of the sealing resin 180 is a rectangular parallelepiped. For convenience, in Fig. 9, Fig. 10, and Fig. 14, the sealing resin 180 is indicated by a two-dot chain line, and the components inside the sealing resin 180 are indicated by a solid line.

[0055] The sealing resin 180 is a synthetic resin having electrical insulation properties. In one example, the sealing resin 180 is an epoxy resin. The sealing resin 180 has six surfaces, a first sealing resin side surface 181, a second sealing resin side surface 182, a third sealing resin side surface 83, a fourth sealing resin side surface 184, a sealing resin back surface 185, and a sealing resin top surface 186. The first sealing resin side surface 181 and the second sealing resin side surface 182 face in opposite directions with a gap therebetween. The third sealing resin side surface 83 and the fourth sealing resin side surface 184 face in opposite directions with a gap therebetween. The sealing resin back surface 185 and the sealing resin top surface 186 face in opposite directions with a gap therebetween. In the following description, the direction in which the sealing resin back surface 185 and the sealing resin top surface 186 are arranged is referred to as the thickness direction Z, the direction in which the first sealing resin side surface 181 and the second sealing resin side surface 182 are arranged is referred to as the vertical direction X, and the direction in which the third sealing resin side surface 83 and the fourth sealing resin side surface 184 are arranged is referred to as the horizontal direction Y. The vertical direction X and the horizontal direction Y are directions perpendicular to the thickness direction Z. The vertical direction X is a direction perpendicular to the horizontal direction Y. Here, the thickness direction Z corresponds to the first direction, the vertical direction X corresponds to the second direction, and the horizontal direction Y corresponds to the third direction.

[0056] The shape of the sealing resin 180 is a rectangular parallelepiped. The sealing resin 180 is a synthetic resin having electrical insulation properties. In one example, the sealing resin 180 is an epoxy resin. The sealing resin 180 has six faces, a first sealing resin side face 181, a second sealing resin side face 182, a third sealing resin side face 83, a fourth sealing resin side face 184, a sealing resin back face 185, and a sealing resin top face 186. The first sealing resin side face 181 and the second sealing resin side face 182 face in opposite directions with a gap therebetween. The third sealing resin side face 83 and the fourth sealing resin side face 184 face in opposite directions with a gap therebetween. The sealing resin back face 185 and the sealing resin top face 186 face in opposite directions with a gap therebetween. In the following description, the direction in which the sealing resin back surface 185 and the sealing resin top surface 186 are arranged is referred to as the thickness direction Z, the direction in which the first sealing resin side surface 181 and the second sealing resin side surface 182 are arranged is referred to as the vertical direction X, and the direction in which the third sealing resin side surface 83 and the fourth sealing resin side surface 184 are arranged is referred to as the horizontal direction Y. The vertical direction X and the horizontal direction Y are directions perpendicular to the thickness direction Z. The vertical direction X is a direction perpendicular to the horizontal direction Y. Here, the vertical direction X corresponds to the first direction, and the horizontal direction Y corresponds to the second direction.

[0057] FIG. 10 is a view of the semiconductor device 101 as viewed from the sealing resin top surface 186 in the thickness direction Z. 10, when the semiconductor device 101 is viewed from the sealing resin top surface 186 in the thickness direction Z, the shape of the sealing resin 180 is a substantially rectangular shape with the long side direction being the vertical direction X and the short side direction being the horizontal direction Y. Hereinafter, the view from the thickness direction Z will be referred to as a plan view. In the plan view, the first sealing resin side surface 181 and the second sealing resin side surface 182 are side surfaces that extend along the horizontal direction Y, and the third sealing resin side surface 183 and the fourth sealing resin side surface 184 are side surfaces that extend along the vertical direction X.

[0058] The substrate 110 has a main surface 110a and a back surface 110b (see FIG. 11) facing opposite to each other in the thickness direction Z. The main surface 110a faces the same direction as the sealing resin top surface 186, and the back surface 110b faces the same direction as the sealing resin back surface 185. The substrate 110 has a flat substrate main body 111 and lead portions 116. In this embodiment, the substrate main body 111 and the lead portions 116 are integrated into a single component. The substrate main body 111 is a die bonding pad on which the semiconductor element 140 is mounted.

[0059] The substrate main body 111 can be divided into an inner main body 112 covered with the sealing resin 180, and a protruding portion 113 protruding from the sealing resin 180. The inner main body 112 and the protruding portion 113 are adjacent to each other in the vertical direction X. The protruding portion 113 protrudes in the vertical direction X from the first sealing resin side surface 181. In this embodiment, the size of the protruding portion 113 in the horizontal direction Y is smaller than the size of the inner main body 112 in the horizontal direction Y. The size of the protruding portion 113 in the horizontal direction Y can be changed arbitrarily. In one example, the size of the protruding portion 113 in the horizontal direction Y may be equal to the size of the inner main body 112 in the horizontal direction Y.

[0060] In a plan view, the inner main body portion 112 is disposed such that the center in the vertical direction X is closer to the first sealing resin side surface 181 than the center in the vertical direction X of the sealing resin 180. The inner main body portion 112 has a main surface 112a, a back surface 112b (see FIG. 11), a first side surface 112c, a second side surface 112d, and a third side surface 112e. The main surface 112a and the back surface 112b face in opposite directions to each other in the thickness direction Z. The main surface 112a constitutes a part of the main surface 110a of the substrate 110, and the back surface 112b constitutes the back surface 110b of the substrate 110. Therefore, the main surface 112a faces the sealing resin top surface 186 side, and the back surface 112b faces the sealing resin back surface 185 side. Moreover, the first side surface 112c faces the second sealing resin side surface 182, the second side surface 112d faces the third sealing resin side surface 83, and the third side surface 112e faces the fourth sealing resin side surface 184. The first side surface 112c extends along the horizontal direction Y. The second side surface 112d and the third side surface 112e face each other with a gap in between in the horizontal direction Y. The second side surface 112d and the third side surface 112e extend along the vertical direction X.

[0061] A narrow width portion 114 is formed at the end of the inner main body portion 112 on the protruding portion 113 side. The narrow width portion 114 is formed by a recess 114a recessed from the second side surface 112d toward the fourth sealing resin side surface 184 side in the horizontal direction Y, and a recess 114b recessed from the third side surface 112e toward the third sealing resin side surface 83 side in the horizontal direction Y. The size of the narrow width portion 114 in the horizontal direction Y is smaller than the size of the portion of the inner main body portion 112 other than the narrow width portion 114 in the horizontal direction Y. The size of the narrow width portion 114 in the horizontal direction Y is also smaller than the size of the protruding portion 113 in the horizontal direction Y. The narrow width portion 114 is provided so as to be adjacent to the first sealing resin side surface 181 of the sealing resin 180 in the vertical direction X. The narrow width portion 114 is provided with a through hole 115 penetrating the narrow width portion 114 in the thickness direction Z. The shape of the through hole 115 in a plan view is an ellipse whose longitudinal direction is the horizontal direction Y.

[0062] The inner main body portion 112 has flange portions 119a, 119b protruding from the main body side surfaces of the inner main body portion 112. The flange portion 119a protrudes from the second side surface 112d of the inner main body portion 112 toward the third sealing resin side surface 83. The flange portion 119b protrudes from the third side surface 112e of the inner main body portion 112 toward the fourth sealing resin side surface 184.

[0063] Each of the flange portions 119a, 119b is provided so as to be flush with the main surface 112a of the inner main body portion 112. Therefore, the main surface 110a of the substrate 110 is constituted by the main surface 112a of the inner main body portion 112 and the flange portions 119a, 119b. Moreover, each of the flange portions 119a, 119b is provided so as to be closer to the main surface 112a than the back surface 112b of the inner main body portion 112. Therefore, the back surface 110b of the substrate 110 is constituted by the back surface 112b of the inner main body portion 112. These flange portions 119a, 119b suppress separation between the substrate 110 and the sealing resin 180.

[0064] 11, the back surface 110b of the substrate 110 (the back surface 112b of the inner main body portion 112) is exposed from the sealing resin back surface 185. This allows heat from the substrate 110 to be dissipated to the outside of the semiconductor device 101. The sealing resin 180 fills the recesses 114a, 114b and the through-hole 115 of the narrow width portion 114 of the inner main body portion 112. This further prevents the substrate 110 and the sealing resin 180 from being separated.

[0065] 10 and 12, the lead portion 116 extends from the end portion on the first side surface 112c side of the inner main body portion 112 toward the second sealing resin side surface 182 and protrudes from the second sealing resin side surface 182. The lead portion 116 can be divided into a terminal portion 117 protruding from the second sealing resin side surface 182, and a connecting portion 118 connecting the terminal portion 117 and the inner main body portion 112.

[0066] 10, the connecting portion 118 is located at a portion closer to the second side surface 112d than the center of the inner main body portion 112 in the lateral direction Y. The connecting portion 118 is continuous with the flange portion 119a. That is, the thickness of the portion of the connecting portion 118 connected to the inner main body portion 112 is thicker than the thicknesses of the flange portions 119a and 119b and thinner than the thickness of the inner main body portion 112.

[0067] As shown in FIG. 10 and FIG. 12, the connecting portion 118 has an inclined portion 118a. The inclined portion 118a is inclined toward the sealing resin top surface 186 from the first side surface 112c of the inner main body portion 112 toward the second sealing resin side surface 182. An intermediate portion 118b between the inclined portion 118a and the terminal portion 117 of the connecting portion 118 is located closer to the sealing resin top surface 186 than the main surface 112a of the inner main body portion 112. In a plan view, the intermediate portion 118b has a bent portion 118c that is bent toward the fourth sealing resin side surface 184. A portion of the intermediate portion 118b that contacts the second sealing resin side surface 182 is located in the center of the second sealing resin side surface 182 in the lateral direction Y.

[0068] The terminal portion 117 protrudes from the center of the second sealing resin side surface 182 in the lateral direction Y. In the thickness direction Z, the position of the terminal portion 117 is the same as the position of the intermediate portion 118b. That is, the terminal portion 117 is located closer to the sealing resin top surface 186 than the main surface 112a of the inner main body portion 112.

[0069] 10, in a plan view, the drive lead 120 and the control lead 130 are arranged closer to the second sealing resin side surface 182 of the sealing resin 180 than the substrate 110, while being spaced apart in the vertical direction X with respect to the substrate 110. The drive lead 120 and the control lead 130 are arranged while being spaced apart from each other in the horizontal direction Y. A lead portion 116 is arranged between the drive lead 120 and the control lead 130 in the horizontal direction Y.

[0070] The drive lead 120 has a drive pad 121, a drive terminal 122, and a connecting portion 1123 that connects the drive pad 121 and the drive terminal 122. The drive pad 121 and the connecting portion 1123 form an inner lead 120B, and the drive terminal 122 forms an outer lead 120A. The drive pad 121 and the connecting portion 1123 are disposed between the substrate 110 and the second sealing resin side surface 182 in the vertical direction X. The drive pad 121 and the connecting portion 1123 are disposed on the fourth sealing resin side surface 184 side from the center of the sealing resin 180 in the horizontal direction Y.

[0071] The shape of the drive pad 121 in a plan view is a rectangle whose long side is in the horizontal direction Y and whose short side is in the vertical direction X. As shown in Figs. 10 and 13, the drive pad 121 has an upper surface 121a, a lower surface 121b, and multiple side surfaces 121c. The upper surface 121a and the lower surface 121b face opposite each other in the thickness direction Z. The upper surface 121a faces in the same direction as the main surface 110a of the substrate 110. Each side surface 121c faces either the vertical direction X or the horizontal direction Y.

[0072] 13, the drive pad 121 is located closer to the sealing resin top surface 186 than the main surface 112a of the inner main body portion 112 in the thickness direction Z. The drive pad 121 is also located closer to the sealing resin top surface 186 than the main surface 140a of the semiconductor element 140 in the thickness direction Z. As shown in FIGS. 12 and 13, in this embodiment, the drive pad 121 is at the same position as the middle portion 118b of the lead portion 116 in the thickness direction Z.

[0073] 10, the connecting portion 1123 continues from the end portion of the drive pad 121 on the second sealing resin side surface 182 side. The connecting portion 1123 is located closer to the fourth sealing resin side surface 184 than the center portion of the drive pad 121 in the horizontal direction Y. The drive terminal 122 configures a source terminal. As shown in FIG. 13, the drive terminal 122 protrudes from the first inclined surface 182a of the second sealing resin side surface 182.

[0074] 10, the control lead 130 has a control pad 131, a control terminal 132, and a connecting portion 1133 that connects the control pad 131 and the control terminal 132. The control pad 131 and the connecting portion 1133 form an inner lead 130B, and the control terminal 132 forms an outer lead 130A. The control pad 131 and the connecting portion 1133 are disposed between the substrate 110 and the second sealing resin side surface 182 in the vertical direction X. The control pad 131 and the connecting portion 1133 are disposed closer to the third sealing resin side surface 83 than the center of the sealing resin 180 in the horizontal direction Y.

[0075] The shape of the control pad 131 in a plan view is a substantially rectangular shape with the longer side direction being the horizontal direction Y and the shorter side direction being the vertical direction X. As shown in Figs. 10 and 13, the control pad 131 has an upper surface 131a, a lower surface 131b, and multiple side surfaces 131c. The upper surface 131a and the lower surface 131b face opposite each other in the thickness direction Z. The upper surface 131a faces in the same direction as the main surface 110a of the substrate 110. Each side surface 131c faces either the vertical direction X or the horizontal direction Y.

[0076] The size of the control pad 131 in the lateral direction Y is smaller than the size of the drive pad 121 in the lateral direction Y. The control pad 131 is located closer to the sealing resin top surface 186 than the main surface 112a of the inner main body portion 112 in the thickness direction Z. The control pad 131 is also located closer to the sealing resin top surface 186 than the main surface 140a of the semiconductor element 140 in the thickness direction Z. In this embodiment, the control pad 131 is at the same position as the intermediate portion 118b of the lead portion 116 in the thickness direction Z.

[0077] The connecting portion 1133 is continuous with the end portion of the control pad 131 on the second sealing resin side surface 182 side. The connecting portion 1133 is located closer to the third sealing resin side surface 83 of the control pad 131 in the lateral direction Y. The control terminal 132 constitutes a gate terminal. The control terminal 132 protrudes from the first inclined surface 182a of the second sealing resin side surface 182.

[0078] As shown in FIG. 12, the substrate 110 includes a first base material (substrate base material) 201 and a first plating layer (substrate plating layer) 202. The first base material 201 is made of Cu (copper). In this embodiment, "made of Cu" means that the first base material 201 is made of Cu or an alloy containing Cu. The first base material 201 is formed using a metal plate formed by, for example, rolling. The first base material 201 has portions that become the flange portions 119a, 119b and the lead portion 116, which are formed by pressing the metal plate. The first plating layer 202 is formed so as to cover the surface of the first base material 201. The first plating layer 202 is made of Ni (nickel). "made of Ni" means that the first plating layer 202 is made of Ni or an alloy containing Ni.

[0079] First base material 201 and first plating layer 202 form each portion of substrate 110. That is, first base material 201 has a portion that forms flat substrate main body 111 and a portion that forms lead portions 116. The surface of first plating layer 202 covering first base material 201 forms the surface of substrate 110, that is, each face of substrate main body 111 and each face of lead portions 116.

[0080] As shown in FIG. 13, drive lead 120 includes second base material 124 and second plating layer 125. The second base material 124 has a pad portion 126 that forms the drive pad 121 , and a lead portion 127 that forms the drive terminal 122 and the connecting portion 123 .

[0081] As shown in FIG. 10 and FIG. 13, the pad portion 126 is formed in a rectangular parallelepiped shape. The pad portion 126 has an upper surface 126a, a lower surface 126b, and a plurality of side surfaces 126c. The upper surface 126a and the lower surface 126b face in opposite directions in the thickness direction Z. The upper surface 126a faces in the same direction as the main surface 110a of the substrate 110. Each side surface 126c faces in either the vertical direction X or the horizontal direction Y. The second plating layer 125 covers the surface of the pad portion 126, that is, covers the upper surface 126a, the lower surface 126b, and the side surface 126c of the pad portion 126. Therefore, the surface of the second plating layer 125 covering the pad portion 126 is the upper surface 121a, the lower surface 121b, and the side surface 121c of the drive pad 121.

[0082] The lead portion 127 extends in the vertical direction X from the pad portion 126 and protrudes from the sealing resin 180. The lead portion 127 has an upper surface 127a and a lower surface 127b facing opposite sides in the thickness direction Z, a side surface 127c facing the horizontal direction Y, and an end surface 127d facing the vertical direction X. The end surface 127d is the surface of the tip of the lead portion 127 protruding from the sealing resin 180. The second plating layer 125 is formed so as to cover the upper surface 127a, the lower surface 127b, and the side surface 127c of the lead portion 127. Therefore, the surface of the second plating layer 125 covering the lead portion 127 is the surface of the driving terminal 122 and the connecting portion 123.

[0083] In this embodiment, end face 127d, that is, end face 127d which is the surface at the tip of lead portion 127, is not covered with second plating layer 125. That is, end face 127d of lead portion 127 is exposed from second plating layer 125. In other words, at the tip surface of drive terminal 122, second base material 124 is exposed from second plating layer 125.

[0084] The second substrate 124 is made of Cu. The second substrate 124 is formed of a metal plate formed by, for example, rolling, like the first substrate 201. The second substrate 124 has a pad portion 126 and a lead portion 127 formed by pressing a metal plate. The second plating layer 125 is made of Ni. As shown in FIG. 15, the second plating layer 125 is a rough-surface plating layer having a surface rougher than the surface of the second substrate 124. The second plating layer 125, which is a rough-surface plating layer, is obtained, for example, by performing an electrolytic plating process on the second substrate 124 constituting the driving lead 120.

[0085] As shown in FIG. 14, the control lead 130 includes a third base material 134 and a third plating layer 135. The third base material 134 has a pad portion 136 that forms the control pad 131 , and a lead portion 137 that forms the control terminal 132 and the connecting portion 133 .

[0086] As shown in FIG. 10 and FIG. 13, the pad portion 136 is formed in a rectangular parallelepiped shape. The pad portion 136 has an upper surface 127a, a lower surface 127b, and a plurality of side surfaces 127c. The upper surface 127a and the lower surface 127b face in opposite directions in the thickness direction. The upper surface 127a faces in the same direction as the main surface 110a of the substrate 110. Each side surface 127c faces either the vertical direction X or the horizontal direction Y. The third plating layer 135 covers the surface of the pad portion 136, that is, covers the upper surface 136a, the lower surface 136b, and the side surface 136c of the pad portion 136. Therefore, the surfaces of the third plating layer 135 covering the pad portion 136 are the upper surface 131a, the lower surface 131b, and the side surface 131c of the control pad 131.

[0087] The lead portion 137 extends in the vertical direction X from the pad portion 136 and protrudes from the sealing resin 180. The lead portion 137 has an upper surface 137a and a lower surface 137b facing opposite sides in the thickness direction Z, a side surface 137c facing the horizontal direction Y, and an end surface 137d facing the vertical direction X. The end surface 137d is the surface of the tip of the lead portion 137 protruding from the sealing resin 180. The third plating layer 135 is formed so as to cover the upper surface 137a, the lower surface 137b, and the side surface 137c of the lead portion 137. Therefore, the surface of the third plating layer 135 covering the lead portion 137 is the surface of the control terminal 132 and the connecting portion 133.

[0088] In this embodiment, end face 137d, that is, end face 137d which is the surface at the tip of lead portion 137, is not covered with third plating layer 135. That is, end face 137d of lead portion 137 is exposed from third plating layer 135. In other words, at the tip surface of control terminal 132, third base material 134 is exposed from third plating layer 135.

[0089] The third base material 134 is made of Cu. The third base material 134 is formed using a metal plate formed by, for example, rolling, similar to the first base material 201. The third base material 134 has a pad portion 136 and a lead portion 137 formed by pressing a metal plate. The third plating layer 135 is made of Ni. The third plating layer 135 is a rough-surface plating layer having a rougher surface than the surface of the third base material 134, similar to the second plating layer 125. The third plating layer 135, which is a rough-surface plating layer, is obtained, for example, by performing an electrolytic plating process on the third base material 134 constituting the control lead 130.

[0090] In this embodiment, the first plating layer 202 constituting the substrate 110 is a rough-surface plating layer having a rougher surface than the surface of the first base material 201 constituting the substrate 110, similar to the second and third plating layers 125, 135. The substrate 110, the drive leads 120, and the control leads 130 can be formed using a lead frame. The lead frame including the substrate 110, the drive leads 120, and the control leads 130 can be formed by pressing the above-mentioned metal plate. The first plating layer 202, the second plating layer 125, and the third plating layer 135, which are rough-surface plating layers, are formed on the lead frame by, for example, an electrolytic plating method.

[0091] After mounting the semiconductor element 140, bonding the drive wire 150 and the control wire 160, and forming the sealing resin 180, the lead frame is cut at a predetermined location to separate the semiconductor device 101. By cutting the lead frame, the second base material 124 and the third base material 134 are exposed at the end surface 137d of the drive lead 120 and the end surface 137d of the control lead 130. As shown in FIG. 12, the first base material 201 is also exposed at the cut location, for example, at the surface of the protruding portion 113 facing the vertical direction X, in the substrate 110, similarly to the drive lead 120 and the control lead 130. As shown in FIGS. 9 to 11, 12, and 13, the drive lead 120 and the control lead 130 have protruding portions 1120T and 130T on their side surfaces. The protruding portions 1120T, 130T are portions that remain after cutting a connecting member (tie bar) that connects the second base material 124 that becomes the drive lead 120 and the third base material 134 that becomes the control lead to a frame material of the lead frame. The second base material 124 and the third base material 134 are also exposed at the protruding portions 1120T, 130T.

[0092] 12 and 13, the semiconductor element 140 is mounted on the main surface 112a of the inner main body portion 112 with solder SD. As shown in Fig. 10, in this embodiment, the semiconductor element 140 is disposed in the center of the inner main body portion 112. Furthermore, the semiconductor element 140 and the drive pad 121 are misaligned in the vertical direction X. Furthermore, the semiconductor element 140 and the control pad 131 are misaligned in the vertical direction X.

[0093] The semiconductor element 140 is a silicon carbide (SiC) chip. In this embodiment, a SiCMOSFET (metal-oxide-semiconductor field-effect transistor) is used as the semiconductor element 140. The semiconductor element 140 (SiCMOSFET) is an element capable of high-speed switching. The switching frequency is, for example, 1 kHz or more and several hundred kHz or less.

[0094] The semiconductor element 140 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 140 is, for example, a square shape. As shown in FIG. 10 and FIG. 12, the semiconductor element 140 has a main surface 140a, a back surface 140b, and a plurality of side surfaces 140c to 140f. The main surface 140a and the back surface 140b face in opposite directions to each other in the thickness direction Z. The main surface 140a faces the sealing resin top surface 186. That is, the main surface 140a faces the same direction as the main surface 110a of the substrate 110. The back surface 140b faces the sealing resin back surface 185. The back surface 140b faces the main surface 112a of the inner main body portion 112. The side surface 140c faces the first sealing resin side surface 181, the side surface 140d faces the second sealing resin side surface 182, the side surface 140e faces the third sealing resin side surface 83, and the side surface 140f faces the fourth sealing resin side surface 184.

[0095] A principal surface side driving electrode 141 and a control electrode 143 are formed on the principal surface 140a. The principal surface side driving electrode 141 and the control electrode 143 constitute the principal surface electrodes formed on the principal surface 140a of the semiconductor element 140. A rear surface side driving electrode (rear surface electrode) 142 (see FIGS. 12 to 14) is formed on the rear surface 140b. In this embodiment, the principal surface side driving electrode 141 constitutes the source electrode, and the rear surface side driving electrode 142 constitutes the drain electrode. The control electrode 143 constitutes the gate electrode. The rear surface side driving electrode 142 is electrically connected to the inner main body portion 112 by solder SD. The solder SD is, for example, lead solder.

[0096] The semiconductor element 140 has a passivation film formed on the main surface 140a. The passivation film has openings formed therein that expose the electrodes on the main surface 140a side of the semiconductor element 140 as the main surface side drive electrode 141 and the control electrode 143.

[0097] As shown in FIGS. 9 and 10, the semiconductor device 101 includes one drive wire 150 and one control wire 160. The drive wire 150 and the control wire 160 are electrically connected to each other. In this embodiment, the drive wire 150 and the control wire 160 are made of the same metal. In this embodiment, the drive wire 150 and the control wire 160 are made of Al (aluminum). "Made of Al" means that the drive wire 150 and the control wire 160 are made of Al or an alloy containing Al.

[0098] The driving wire 150 has a circular cross section perpendicular to the long axis direction near the center. The control wire 160 has a circular cross section perpendicular to the long axis direction near the center. The wire diameter of the driving wire 150 is larger than the wire diameter of the control wire 160. In other words, the driving wire 150 is a thick aluminum wire. The wire diameter of the driving wire 150 is, for example, 200 μm or more and 600 μm or less. The wire diameter of the control wire 160 is, for example, 40 μm or more and 100 μm or less.

[0099] A first end 151 of the drive wire 150 is joined to the main surface side drive electrode 141 of the semiconductor element 140, and a second end 152 of the drive wire 150 is joined to the second plating layer 125 that forms the upper surface 121a of the drive pad 121. The drive wire 150 is joined to the main surface side drive electrode 141 and the drive pad 121 by, for example, ultrasonic bonding.

[0100] 9 and 10, a first end 161 of the control wire 160 is bonded to the control electrode 143 of the semiconductor element 140, and a second end 162 of the control wire 160 is bonded to the third plating layer 135 that forms the upper surface 131a of the control pad 131. The control wire 160 is bonded to the control electrode 143 and the control pad 131 by, for example, ultrasonic bonding.

[0101] [Effect] The operation of this embodiment will be described. The semiconductor device 101 of this embodiment has a substrate 110, and a drive pad 121 and a control pad 131 arranged in the vertical direction X with respect to the substrate 110. The semiconductor element 140 is mounted on the main surface 110a of the substrate 110. A first end 151 of a drive wire 150 made of Al is joined to a main surface side drive electrode 141 of the semiconductor element 140, and a second end 152 of the drive wire 150 is joined to the drive pad 121. A first end 161 of a control wire 160 made of Al is joined to a control electrode 143 of the semiconductor element 140, and a second end 162 of the control wire 160 is joined to the control pad 131. The drive pad 121 includes a second base material 124 made of Cu and a second plating layer 125 made of Ni that covers the surface of the second base material 124. The control pad 131 includes a third base material 134 made of Cu, and a third plating layer 135 made of Ni that covers the surface of the second base material 124. The second plating layer 125 is a rough-surface plating layer whose surface is rougher than the surface of the second base material 124. The third plating layer 135 is a rough-surface plating layer whose surface is rougher than the surface of the third base material 134. The semiconductor element 140, the drive pad 121, the control pad 131, the drive wire 150, and the control wire 160 are sealed with a sealing resin 180.

[0102] The second plating layer 125 made of Ni prevents the drive wire 150 from being separated from the drive pad 121. If the drive pad 121 were made of only Cu, an intermetallic compound formed between the drive wire 150 made of Al and the drive pad 121 would grow due to heat, causing the drive wire 150 to separate from the drive pad 121, etc. Therefore, the second plating layer 125 made of Ni prevents the formation of an intermetallic compound and prevents the drive wire 150 from being separated from the drive pad 121.

[0103] The second plating layer 125 constituting the drive pad 121 is a rough-surface plating layer in which the surface of the second plating layer 125 is rougher than the surface of the second base material 124 constituting the drive pad 121. Therefore, the surface of the second plating layer 125 has good adhesion to the sealing resin 180 that seals the drive pad 121. Therefore, the second plating layer 125 suppresses peeling of the sealing resin 180 from the drive pad 121. If the sealing resin 180 peels off from the drive pad 121, the peeling may cause the drive wire 150 joined to the drive pad 121 to break. Therefore, the second plating layer 125 suppresses peeling of the sealing resin 180 from the drive pad 121 and suppresses breakage of the drive wire 150.

[0104] The third plating layer 135 made of Ni prevents the control wire 160 from being separated from the control pad 131. If the control pad 131 were made of only Cu, an intermetallic compound formed between the control wire 160 made of Al and the control pad 131 would grow due to heat, causing the control wire 160 to be separated from the control pad 131, etc. Therefore, the third plating layer 135 made of Ni prevents the formation of an intermetallic compound and prevents the control wire 160 from being separated from the control pad 131.

[0105] The third plating layer 135 constituting the control pad 131 is a rough-surface plating layer in which the surface of the third plating layer 135 is rougher than the surface of the third base material 134 constituting the control pad 131. Therefore, the surface of this third plating layer 135 has good adhesion to the sealing resin 180 that seals the control pad 131. Therefore, the third plating layer 135 suppresses peeling of the sealing resin 180 from the control pad 131. If the sealing resin 180 peels off from the control pad 131, the peeling may cause the control wire 160 joined to the control pad 131 to break. Therefore, the third plating layer 135 suppresses peeling of the sealing resin 180 from the control pad 131 and suppresses breakage of the control wire 160.

[0106] In the semiconductor device 101 equipped with the semiconductor element 140 including SiC, a large current is passed through it, so a thick drive wire 150 made of Al is used between the main surface side drive electrode 141 of the semiconductor element 140 and the drive pad 121. When wires such as Au (gold) or Cu are used, multiple wires must be connected according to the current, which increases the number of steps for connection and the pad area, that is, leads to an increase in the size of the semiconductor device. In contrast, the semiconductor device 101 of this embodiment can pass the required current through a single drive wire 150, suppressing the increase in the number of steps and the increase in size.

[0107] According to the semiconductor device 101 of this embodiment, the following effects can be obtained. (2-1) The second plating layer 125 made of Ni prevents the drive wire 150 from becoming detached from the drive pad 121. If the drive pad 121 were made of only Cu, an intermetallic compound formed between the drive wire 150 made of Al and the drive pad 121 would grow due to heat, causing the drive wire 150 to become detached from the drive pad 121, etc. Therefore, the second plating layer 125 made of Ni prevents the formation of intermetallic compounds and prevents the drive wire 150 from becoming detached from the drive pad 121.

[0108] (2-2) The second plating layer 125 constituting the drive pad 121 is a rough-surface plating layer in which the surface of the second plating layer 125 is rougher than the surface of the second base material 124 constituting the drive pad 121. Therefore, the surface of the second plating layer 125 has good adhesion to the sealing resin 180 that seals the drive pad 121. Therefore, the second plating layer 125 suppresses peeling of the sealing resin 180 from the drive pad 121. If the sealing resin 180 peels off from the drive pad 121, the peeling may cause the drive wire 150 joined to the drive pad 121 to break. Therefore, the second plating layer 125 suppresses peeling of the sealing resin 180 from the drive pad 121, and can suppress breakage of the drive wire 150.

[0109] (2-3) The third plating layer 135 made of Ni prevents the control wire 160 from being separated from the control pad 131. If the control pad 131 were made of only Cu, an intermetallic compound formed between the control wire 160 made of Al and the control pad 131 would grow due to heat, causing the control wire 160 to be separated from the control pad 131, etc. Therefore, the third plating layer 135 made of Ni can prevent the formation of intermetallic compounds and prevent the control wire 160 from being separated from the control pad 131.

[0110] (2-4) The third plating layer 135 constituting the control pad 131 is a rough-surface plating layer in which the surface of the third plating layer 135 is rougher than the surface of the third base material 134 constituting the control pad 131. Therefore, the surface of this third plating layer 135 has good adhesion to the sealing resin 180 that seals the control pad 131. Therefore, the third plating layer 135 suppresses peeling of the sealing resin 180 from the control pad 131. If the sealing resin 180 peels off from the control pad 131, the peeling may cause the control wire 160 joined to the control pad 131 to break. Therefore, the third plating layer 135 suppresses peeling of the sealing resin 180 from the control pad 131, and can suppress breakage of the control wire 160.

[0111] (2-5) In the semiconductor device 101 having the semiconductor element 140 including SiC, a large current is passed through it, so a thick drive wire 150 made of Al is used between the main surface side drive electrode 141 of the semiconductor element 140 and the drive pad 121. When wires such as Au (gold) or Cu are used, multiple wires must be connected according to the current, which increases the number of steps for connection and the pad area, that is, the size of the semiconductor device. In contrast, the semiconductor device 101 of this embodiment can pass the required current through a single drive wire 150, suppressing the increase in the number of steps and the size of the device.

[0112] (Example of change) The semiconductor device of each of the above embodiments can be modified, for example, as follows. The above embodiment and each of the following modifications can be combined with each other as long as no technical contradiction occurs. In the following modifications, the same reference numerals as in the above embodiment are used for the parts common to the above embodiment, and the description thereof will be omitted.

[0113] In the semiconductor device 1 of the first embodiment, the plating layers 71-73 shown in FIG. 1 may be rougher than the surfaces of the drive pads 21, 31, the surfaces of which are the base material, for example, the connection surfaces 24, 34. The surfaces of these plating layers 71-73 have good adhesion to the sealing resin 80 that seals the drive pads 21, 31 and the connecting portion 18. Therefore, the plating layers 71-73 suppress peeling of the sealing resin 80 from the drive pads 21, 31 and the connecting portion 18. If the sealing resin 80 peels off from the drive pads 21, 31, the peeling may cause the wires 50, 60 joined to the drive pads 21, 31 to break. Therefore, the plating layers 71, 72 suppress peeling of the sealing resin 80 from the drive pads 21, 31, and suppress breakage of the wires 50, 60.

[0114] The number of the driving wires 50 may be two or more depending on the amount of current required for the semiconductor device 1. Even in this case, the number of the driving wires 50 is much smaller than when Au or Cu wires are used, so that the increase in the number of steps and the size can be suppressed. In this case, as shown in FIG. 8, the joint portion 53 of the second end 52 of each of the multiple driving wires 50 may have a portion 53a joined to the upper surface of the plating layer 71 and a portion 53b joined to a portion 24b of the connection surface 24 of the driving pad 21 that is exposed from the plating layer 71. Also, the width W71 of the plating layer 71 may be set so that all of the joint portions 53 of each of the multiple driving wires 50 are joined to the plating layer 71.

[0115] 7, the plating layer 71 may cover the central portion of the drive pad 21. Similarly, the plating layer 72 may cover the central portion of the control pad 31. The plating layer 73 on the lead portion 16 may be omitted.

[0116] The width W71 of the plating layer 71 of the drive pad 21 and the width W72 of the plating layer 72 of the control pad 31 may be different from each other. For example, the joint portion 53 of the second end 52 of the drive wire 50 may not protrude from the plating layer 71. In addition, the plating layer 71 may cover the connection surface 24 up to the end of the drive pad 21 in the vertical direction X.

[0117] The number of drive wires 150 can be two or more depending on the amount of current required for the semiconductor device 101. Even in this case, the number of drive wires 150 is far less than when Au or Cu wires are used, so that an increase in the number of steps and size can be suppressed.

[0118] The second plating layer 125 may be formed to cover all or part of the upper surface 126a of the pad portion 126 of the second base material 124. Similarly, the third plating layer 135 may be formed to cover all or part of the upper surface 136a of the pad portion 136 of the third base material 134.

[0119] The first plating layer 202 of the substrate 110 may be omitted. The semiconductor elements 40 and 140 may be diodes or LSIs. (Additional Note) The technical ideas that can be understood from the above-described embodiments and modifications will be described below.

[0120] (Appendix 1) A substrate having a major surface; a semiconductor element mounted on the main surface and having a main surface electrode facing in the same direction as the main surface; a connection pad made of Cu, arranged at a distance from the substrate in a first direction parallel to the main surface, and having a connection surface facing the same direction as the main surface; a plating layer made of Ni and covering a part of the connection surface; a wire made of Al, the wire having a first end joined to the main surface electrode and a second end joined to the plating layer; a sealing resin that seals the semiconductor element, the connection pads, the plating layer, and the wires; A semiconductor device comprising:

[0121] (Appendix 2) the principal surface electrodes include a control electrode and a drive electrode, the connection pads are disposed with respect to the substrate at a distance from the substrate in a first direction parallel to the main surface, and include a control pad and a drive pad arranged at a distance from each other along a second direction parallel to the main surface and perpendicular to the first direction; the wires include a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad; 2. The semiconductor device according to claim 1.

[0122] (Appendix 3) 3. The semiconductor device according to claim 2, wherein the control wire has a smaller diameter than the drive wire.

[0123] (Appendix 4) The wire diameter of the control wire is 40 μm or more and 100 μm or less, The wire diameter of the driving wire is 200 μm or more and 600 μm or less. 4. The semiconductor device according to claim 3.

[0124] (Appendix 5) The control wire bonded to the control pad is formed on a plating layer on the control pad; A bonding portion of the control wire bonded to the drive pad is formed so as to protrude from a plating layer on the drive pad onto the connection surface of the drive pad. The semiconductor device according to any one of claims 2 to 4.

[0125] (Appendix 6) 6. The semiconductor device according to claim 5, wherein an area of ​​the joint of the driving wire that is joined to the upper surface of the plating layer is equal to or larger than an area of ​​a cross section of the driving wire.

[0126] (Appendix 7) 7. The semiconductor device according to claim 2, wherein the connection surface of the control pad has a portion covered by the plating layer and a portion exposed from the plating layer.

[0127] (Appendix 8) 8. The semiconductor device according to claim 2, wherein the connection surface of the drive pad is entirely covered with the plating layer.

[0128] (Appendix 9) 9. The semiconductor device of claim 1, wherein the wire is bonded to the connection pad by ultrasonic bonding.

[0129] (Appendix 10) the semiconductor element has a back surface electrode facing opposite to the main surface electrode, The substrate is made of Cu, The back electrode is connected to the substrate by solder. 10. The semiconductor device according to claim 1,

[0130] (Appendix 11) 11. The semiconductor device according to claim 1, wherein the plating layer is a rough-surface plating layer having a surface rougher than the top surface of the base material.

[0131] (Appendix 12) A substrate having a major surface; a semiconductor element mounted on the main surface and having a main surface electrode facing in the same direction as the main surface; a connection pad disposed on the substrate at a distance from the substrate in a first direction parallel to the main surface; a wire having a first end bonded to the main surface electrode and a second end bonded to the connection pad; a sealing resin that seals the semiconductor element, the connection pads, and the wires; Equipped with The wire is made of Al, The connection pad is A substrate made of Cu and having an upper surface facing in the same direction as the main surface; a plating layer made of Ni and covering the upper surface of the base material; having The plating layer is a rough-surface plating layer having a surface rougher than the upper surface of the base material. Semiconductor device.

[0132] (Appendix 13) The substrate has a back surface facing the opposite side to the top surface, and a side surface between the top surface and the back surface, The plating layer covers the upper surface, the rear surface, and the side surfaces of the base material. 13. The semiconductor device according to claim 12.

[0133] (Appendix 14) a terminal extending from the connection pad along the first direction and protruding from a first side surface of the sealing resin; the base material includes a pad portion constituting the connection pad and a lead portion constituting the terminal, the plating layer covers the surfaces of the pad portion and the lead portion; 14. The semiconductor device according to claim 12 or 13.

[0134] (Appendix 15) 15. The semiconductor device according to claim 14, wherein an end surface of the terminal exposes the substrate. (Appendix 16) The substrate includes a substrate base material made of Cu and a substrate plating layer covering a surface of the substrate base material, The surface of the substrate plating layer is a rough-surface plating layer that is rougher than the surface of the substrate base material. 16. The semiconductor device according to claim 12,

[0135] (Appendix 17) 17. The semiconductor device of claim 12, wherein the wire is bonded to the connection pad by ultrasonic bonding.

[0136] (Appendix 18) the semiconductor element is a transistor, and the principal surface electrode includes a control electrode and a drive electrode; the connection pads are disposed with respect to the substrate at a distance from the substrate in a first direction parallel to the main surface, and include a control pad and a drive pad arranged at a distance from each other along a second direction parallel to the main surface and perpendicular to the first direction; the wires include a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad; The semiconductor device according to any one of claims 12 to 17.

[0137] (Appendix 19) 19. The semiconductor device according to claim 18, wherein the control wire has a smaller diameter than the drive wire.

[0138] (Appendix 20) The wire diameter of the control wire is 40 μm or more and 100 μm or less, The wire diameter of the driving wire is 200 μm or more and 600 μm or less. 19. The semiconductor device according to claim 18.

[0139] (Appendix 21) 21. The semiconductor device according to claim 12, wherein the substrate includes a frame made of Cu and a rough-surface plating layer covering a surface of the frame.

[0140] (Appendix 22) The substrate has a back surface facing opposite to the main surface, The back surface of the substrate is exposed from the sealing resin. 22. The semiconductor device according to claim 12,

[0141] (Appendix 23) the semiconductor element has a back surface electrode facing opposite to the main surface electrode, The back electrode is connected to the substrate by solder. 23. The semiconductor device according to claim 12,

[0142] (Appendix 24) The semiconductor device according to any one of claims 1 to 23, wherein the semiconductor element is a Si chip or a SiC chip.

[0143] (Appendix A1) A substrate having a major surface; a semiconductor element mounted on the main surface and having a main surface electrode facing in the same direction as the main surface; a connection pad made of Cu, arranged at a distance from the substrate in a first direction parallel to the main surface, and having a connection surface facing the same direction as the main surface; a plating layer made of Ni and covering a part of the connection surface; a wire made of Al, the wire having a first end joined to the main surface electrode and a second end joined to the plating layer; a sealing resin that seals the semiconductor element, the connection pads, the plating layer, and the wires; Equipped with the principal surface electrodes include a control electrode and a drive electrode, the connection pads include a control pad and a drive pad arranged at a distance from each other along a second direction parallel to the main surface and perpendicular to the first direction; the wires include a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad; The control wire bonded to the control pad is formed on a plating layer on the control pad; the connection surface of the drive pad has a portion covered with the plating layer and a portion exposed from the plating layer, a bonding portion of the drive wire bonded to the drive pad is formed to protrude from a plating layer on the drive pad to a portion of the connection surface of the drive pad that is exposed from the plating layer, the sealing resin seals the drive wire in a state of contact with both a portion of the connection surface of the drive pad that is covered with the plating layer and a portion of the connection surface that is exposed from the plating layer. Semiconductor device.

[0144] (Appendix A2) 2. The semiconductor device according to claim 1, wherein the control wire has a smaller diameter than the drive wire.

[0145] (Appendix A3) The wire diameter of the control wire is 40 μm or more and 100 μm or less, The wire diameter of the driving wire is 200 μm or more and 600 μm or less. 3. The semiconductor device according to claim 2.

[0146] (Appendix A4) 4. The semiconductor device according to claim 1, wherein an area of ​​the portion of the drive wire that is joined to the upper surface of the plating layer at the joint is equal to or greater than an area of ​​a cross section of the drive wire.

[0147] (Appendix A5) 5. The semiconductor device according to claim 1, wherein the connection surface of the control pad has a portion covered by the plating layer and a portion exposed from the plating layer.

[0148] (Appendix A6) 6. The semiconductor device of claim 1, wherein the wire is bonded to the connection pad by ultrasonic bonding.

[0149] (Appendix A7) the semiconductor element has a back surface electrode facing opposite to the main surface electrode, The substrate is made of Cu, The back electrode is connected to the substrate by solder. 7. The semiconductor device according to claim 1,

[0150] (Appendix A8) 8. The semiconductor device according to claim 1, wherein the plating layer is a rough-surface plating layer having a surface rougher than the connection surface of the connection pad. [Explanation of symbols]

[0151] 1 Semiconductor device 10 Substrate 10a Main surface 10b back side 11 Board main body 12 Inner body part 12a Main surface 12b Back 12c 1st side 12d 2nd side 12e 3rd side 13 Protrusion 14 Narrow part 14a Recess 14b Recess 15 Through hole 16 Lead section 17 Terminal section 18 Connection part 18a Slope 18b Middle part 18c Bend part 19a Flange 19b Flange part 20 Drive Lead 20A outer lead 20B inner lead 21 Drive Pad 21a First end 21b Second end 22 Drive terminal 23 Connecting part 24 Connection Surface 24a part 24b part 30 Control Lead 30A outer lead 30B inner lead 31 Control Pad 31a First end 31b Second end 32 Control terminal 33 Connecting part 34 Connection Surface 34a part 34b part 40 Semiconductor elements 40a Main surface 40b Back 40c side 40d Side 40e Side 40f side 41 Main surface side drive electrode (main surface electrode) 42 Back side drive electrode (back side electrode) 43 Control electrode (principal surface electrode) 50 Drive Wire 51 1st end 52 2nd end 53 Joint part 53a part 53b part 60 Control Wire 61 1st end 62 2nd end 71~73 Plating layer 80 Sealing resin 81 First sealing resin side 82 Second sealing resin side 82a 1st slope 83 Third sealing resin side 84 4th sealing resin side 85 Sealing resin back side 86 Sealing resin top surface 101 Semiconductor device 110 Substrate 110a main surface 110b back side 111 Board main body 112 Inner body part 112a Main surface 112b back side 112c 1st side 112d 2nd side 112e 3rd side 113 Protrusion 114 Narrow section 114a Recess 114b Recess 115 Through hole 116 Lead section 117 Terminal section 118 Connection section 118a Slope 118b Middle part 118c Bend section 119a Flange part 119b Flange part 120 Drive Lead 120A outer lead 120B inner lead 120T protrusion 121 Drive Pad 121a Top side 121b Bottom side 121c side 122 Drive terminal 123 Connecting part 124 Second base material 125 Second plating layer 126 Pad section 126a Top side 126b Bottom side 126c side 127 Lead section 127a Top side 127b Bottom side 127c side 127d end face 130 Control Lead 130A outer lead 130B Inner Lead 130T protrusion 131 Control Pad 131a Top side 131b Bottom side 131c side 132 Control terminal 133 Connecting part 134 Third base material 135 3rd plating layer 136 Pad section 136a top surface 136b Bottom side 136c side 137 Lead section 137a top surface 137b Bottom surface 137c side 137d End face 140 Semiconductor Devices 140a main surface 140b back side 140c side 140d side 140e side 140f side 141 Main surface drive electrode 142 Back side drive electrode 143 Control Electrode 150 Drive Wire 151 1st end 152 2nd end 154 Third sealing resin side 160 Control Wire 161 1st end 162 2nd end 180 Sealing resin 181 First sealing resin side 182 Second sealing resin side 182a 1st slope 183 Third sealing resin side 184 4th sealing resin side 185 Sealing resin back side 186 Sealing resin top surface 201 1st base material 202 First plating layer W71, W72 Width X vertical direction Y Horizontal Z thickness direction

Claims

1. A substrate having a major surface; a semiconductor element mounted on the main surface and having a main surface electrode facing in the same direction as the main surface; a connection pad disposed on the substrate at a distance from the substrate in a first direction parallel to the main surface; a wire having a first end bonded to the main surface electrode and a second end bonded to the connection pad; a sealing resin that seals the semiconductor element, the connection pads, and the wires; Equipped with The wire is made of Al, The connection pad is a substrate made of Cu and having an upper surface facing in the same direction as the main surface; a plating layer made of Ni and covering the upper surface of the base material; having The plating layer is a rough-surface plating layer having a surface rougher than the upper surface of the base material. Semiconductor device.

2. The substrate has a back surface facing the opposite side to the top surface, and a side surface between the top surface and the back surface, The plating layer covers the upper surface, the rear surface, and the side surfaces of the base material. The semiconductor device according to claim 1 .

3. a terminal extending from the connection pad along the first direction and protruding from a first side surface of the sealing resin; the base material includes a pad portion constituting the connection pad and a lead portion constituting the terminal, the plating layer covers the surfaces of the pad portion and the lead portion; The semiconductor device according to claim 1 or 2.

4. The semiconductor device according to claim 3 , wherein the base material is exposed at end faces of the terminals.

5. The substrate includes a substrate base material made of Cu and a substrate plating layer covering a surface of the substrate base material, The surface of the substrate plating layer is a rough-surface plating layer that is rougher than the surface of the substrate base material. The semiconductor device according to claim 1 .

6. The semiconductor device according to claim 1 , wherein the wire is bonded to the connection pad by ultrasonic bonding.

7. the semiconductor element is a transistor, and the principal surface electrode includes a control electrode and a drive electrode; the connection pads are disposed at a distance from the substrate in the first direction, and include a control pad and a drive pad arranged at a distance from each other along a second direction that is parallel to the main surface and perpendicular to the first direction; the wires include a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad; The semiconductor device according to claim 1 .

8. The semiconductor device according to claim 7 , wherein the control wire has a smaller diameter than the drive wire.

9. The wire diameter of the control wire is 40 μm or more and 100 μm or less, The wire diameter of the driving wire is 200 μm or more and 600 μm or less. The semiconductor device according to claim 7 or 8.

10. The semiconductor device according to claim 1 , wherein the substrate includes a frame made of Cu and a rough-surface plating layer covering a surface of the frame.

11. The substrate has a back surface facing opposite to the main surface, The back surface of the substrate is exposed from the sealing resin. The semiconductor device according to claim 1 .

12. the semiconductor element has a back surface electrode facing opposite to the main surface electrode, The back electrode is connected to the substrate by solder. The semiconductor device according to claim 1 .

13. The semiconductor device according to claim 1 , wherein the semiconductor element is a Si chip or a SiC chip.

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