Substrate processing system

Abstract

To provide a substrate processing system which has higher efficiency.SOLUTION: A substrate processing system 100 comprises one or more substrate processing devices 10, a heat pump device 20, a heating circulation path 30, a process liquid supply path 31, a refrigerant circulation path 21, and a cooling liquid supply path 41. Each of the substrate processing devices 10 supplies process liquid to a substrate so as to process the substrate. The heat pump device 20 heats the process liquid. The heating circulation path 30 returns, to the heat pump device 20, the process liquid from the heat pump device 20. The process liquid supply path 31 branches from the heating circulation path 30, and it supplies the process liquid to the substrate processing devices 10. The refrigerant circulation path 21 returns, to the heat pump device 20, the cooling liquid cooled by the heat pump device 20. The cooling liquid supply path 41 branches from the cooling circulation path 21, and it supplies the cooling liquid to the substrate processing devices 10.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing system. [Background technology]

[0002] Conventionally, temperature control devices have been provided for simultaneously controlling the temperature of multiple loads in a factory (for example, Patent Document 1). In Patent Document 1, the temperature control device includes a heating-side circulation pipe passing through the load, a cooling-side circulation pipe passing through the load, and a heat pump. The heat pump includes a heat generating core (heat exchanger) and a heat absorbing core (heat exchanger). The heat generating core heats the liquid flowing through the heating-side circulation pipe, and the heat absorbing core cools the liquid flowing through the cooling-side circulation pipe.

[0003] The liquid heated by the heat generating core flows through the circulation piping on the heating side and heats the load that is to be heated, and the liquid cooled by the heat absorbing core flows through the circulation piping on the cooling side and cools the load that is to be cooled.

[0004] In addition, Patent Documents 2 to 5 are listed as techniques related to the present disclosure. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2009-287865 A [Patent Document 2] JP 2002-246359 A [Patent Document 3] Japanese Patent Application Publication No. 11-87300 [Patent Document 4] Patent Publication No. 2021-9956 [Patent Document 5] JP 2015-113523 A Summary of the Invention [Problem to be solved by the invention]

[0006] A highly efficient substrate processing system is desired.

[0007] Therefore, an object of the present disclosure is to provide a more efficient substrate processing system. [Means for solving the problem]

[0008] A first aspect of the substrate processing system includes one or more substrate processing apparatuses for supplying a processing liquid to substrates to process the substrates, a heat pump device for heating the processing liquid, a heating circulation path for returning the processing liquid from the heat pump device to the heat pump device, a processing liquid supply path branching off from the heating circulation path for supplying the processing liquid to the substrate processing apparatus, a cooling circulation path for returning a cooling liquid cooled by the heat pump device to the heat pump device, and a cooling liquid supply path branching off from the cooling circulation path for supplying the cooling liquid to the substrate processing apparatus.

[0009] A second aspect of the substrate processing system is the substrate processing system according to the first aspect, further comprising a heater for heating the processing liquid flowing through the processing liquid supply path.

[0010] A third aspect of the substrate processing system is the substrate processing system according to the second aspect, wherein the heater includes a heat pump.

[0011] A fourth aspect of the substrate processing system is the substrate processing system according to the second or third aspect, further comprising a control unit that receives information about the substrate and causes the heater to start a heating operation.

[0012] A fifth aspect of the substrate processing system is a substrate processing system according to any one of the first to fourth aspects, wherein the heat pump device includes a heat exchanger connected to the heating circuit and formed from a thermally conductive resin, and the substrate processing system further includes a refrigerant concentration sensor that measures a concentration of refrigerant in the heating circuit.

[0013] A sixth aspect of the substrate processing system is a substrate processing system according to any one of the first to fifth aspects, further comprising a discharge path through which waste liquid from the substrate processing apparatus flows, and a heat retention unit that keeps the heating circulation path warm with the waste liquid supplied from the discharge path.

[0014] A seventh aspect of the substrate processing system is a substrate processing system according to any one of the first to sixth aspects, further comprising a cooling section upstream of the cooling liquid supply path and downstream of the heat pump device, for cooling the cooling liquid flowing through the cooling circulation path.

[0015] An eighth aspect of the substrate processing system is a substrate processing system according to the seventh aspect, further comprising a discharge path for flowing waste liquid from the substrate processing apparatus, and a waste liquid cooling unit for cooling the waste liquid in the cooling circulation path or a branch path branching off from the cooling circulation path. Effect of the Invention

[0016] According to the first aspect of the substrate processing system, the heat pump device heats the processing liquid, so that the processing liquid can be heated more efficiently and the processing liquid can be supplied to the substrate processing apparatus. Moreover, the cooling liquid to be cooled by the heat pump device is used to cool the equipment of the substrate processing apparatus. This allows the energy of the cooling side of the heat pump device to be used, so that the efficiency of the substrate processing system can be improved.

[0017] According to the second aspect of the substrate processing system, the heater can heat the processing liquid at a position closer to the substrate processing apparatus than the heat pump device, so that the processing liquid whose temperature has been adjusted with higher accuracy can be supplied to the substrate processing apparatus.

[0018] According to the third aspect of the substrate processing system, the efficiency of the substrate processing system can be further improved.

[0019] According to the fourth aspect of the substrate processing system, the processing liquid supply path can be preheated.

[0020] According to the fifth aspect of the substrate processing system, the coolant concentration in the processing liquid can be monitored.

[0021] According to the sixth aspect of the substrate processing system, the heat of the waste liquid can be effectively utilized, so that the efficiency of the substrate processing system can be further improved.

[0022] According to the seventh aspect of the substrate processing system, since a cooling unit separate from the heat pump device is provided, the cooling liquid can be cooled independently of the heat pump device, and therefore the temperature adjustment range of the cooling liquid can be expanded.

[0023] According to the eighth aspect of the substrate processing system, the temperature of the waste liquid can be quickly reduced. [Brief description of the drawings]

[0024] [Figure 1] 1 is a diagram illustrating an example of a configuration of a substrate processing system according to a first embodiment. [Diagram 2] 1 is a diagram illustrating an example of a configuration of a substrate processing apparatus. [Diagram 3] FIG. 13 is a diagram illustrating an example of a configuration of a substrate processing system according to a modified example. [Figure 4] 10 is a flowchart showing an example of heater start control. [Diagram 5] FIG. 13 is a diagram illustrating an example of the configuration of a heater according to a second embodiment. [Figure 6] FIG. 13 is a diagram illustrating an example of a configuration of a substrate processing system according to a second embodiment. [Figure 7] 4 is a flowchart showing an example of monitoring control of a refrigerant concentration in a treatment liquid. [Figure 8] FIG. 13 is a diagram illustrating an example of a configuration of a substrate processing system according to a third embodiment. [Figure 9] 2 is a diagram illustrating an example of a configuration of a substrate processing apparatus and a heat retaining unit. FIG. [Figure 10]13 is a flowchart showing an example of discharge control of a waste liquid. [Figure 11] FIG. 13 is a diagram illustrating an example of a configuration of a substrate processing system according to a fourth embodiment. [Figure 12] FIG. 2 is a diagram illustrating an example of a configuration of a waste liquid cooling unit. [Figure 13] FIG. 11 is a diagram illustrating another example of the configuration of the waste liquid cooling unit. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, an embodiment will be described with reference to the accompanying drawings. Note that the components described in the embodiment are merely examples, and are not intended to limit the scope of the present disclosure. In the drawings, the dimensions or numbers of each part may be exaggerated or simplified as necessary for ease of understanding.

[0026] Expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only strictly indicate the positional relationship, but also indicate a state in which the two are relatively displaced in terms of angle or distance within a range in which a tolerance or similar function is obtained, unless otherwise specified. Expressions indicating an equal state (e.g., "same," "equal," "homogeneous," etc.) not only strictly indicate a state in which the two are quantitatively equal, but also indicate a state in which there is a difference in which a tolerance or similar function is obtained, unless otherwise specified. Expressions indicating a shape (e.g., "square shape" or "cylindrical shape," etc.) not only strictly indicate the shape geometrically, but also indicate a shape having, for example, unevenness or chamfering, within a range in which a similar effect is obtained, unless otherwise specified. The expressions "comprise," "include," "have," "includes," "includes," or "has" a component are not exclusive expressions that exclude the presence of other components. The expression "at least one of A, B, and C" includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0027] <First embodiment> <Configuration of the substrate processing system> 1 is a diagram illustrating an example of a configuration of a substrate processing system 100. The substrate processing system 100 includes one or more substrate processing apparatuses 10, a heat pump device 20, a heating circulation path 30, a processing liquid supply path 31, and a processing liquid replenishment unit 60.

[0028] The substrate processing apparatus 10 is an apparatus that performs processing on a substrate W, as described in detail below. The substrate W includes various substrates, such as a semiconductor substrate, a substrate for a display, a substrate for a photomask, and a substrate for a magnetic disk or an optical disk. In the example of FIG. 1, a plurality of substrate processing apparatuses 10 are provided in the substrate processing system 100. In the example of FIG. 1, a substrate processing apparatus 10A and a substrate processing apparatus 10B are shown as examples of the substrate processing apparatus 10. The substrate processing apparatus 10A and the substrate processing apparatus 10B supply a processing liquid to the substrate W, as described below, to perform processing on the substrate W.

[0029] The heat pump unit 20 is a device that heats the treatment liquid flowing through the heating circulation path 30. The heating circulation path 30 is a flow path through which the treatment liquid heated by the heat pump unit 20 flows again toward the heat pump unit 20. In other words, the heating circulation path 30 is a circulation flow path for returning the treatment liquid from the heat pump unit 20 back to the heat pump unit 20.

[0030] The heat pump device 20 includes a refrigerant circulation path 21, a heat exchanger 22 for heating, a heat exchanger 23 for cooling, a compressor 24, and an expansion valve 25. The refrigerant circulation path 21 is a flow path that circulates a refrigerant, and is mainly composed of piping. The refrigerant is, for example, a carbon dioxide refrigerant or an ammonia refrigerant. The refrigerant circulation path 21 is provided with the heat exchanger 22, the heat exchanger 23, the compressor 24, and the expansion valve 25.

[0031] The compressor 24 includes a suction port and a discharge port, compresses the low-temperature, low-pressure refrigerant sucked from the suction port, and discharges the compressed high-temperature, high-pressure refrigerant from the discharge port. The high-temperature, high-pressure refrigerant from the compressor 24 flows through the refrigerant circulation path 21 toward the heat exchanger 22 and flows into the heat exchanger 22.

[0032] The heat exchanger 22 exchanges heat between the refrigerant and the treatment liquid. As a specific configuration, a refrigerant flow path 221 through which the refrigerant flows and a treatment liquid flow path 222 through which the treatment liquid flows are formed in the heat exchanger 22. The upstream end of the treatment liquid flow path 222 is connected to the downstream end of the heating circulation path 30, and the downstream end of the treatment liquid flow path 222 is connected to the upstream end of the heating circulation path 30. The heating circulation path 30 is mainly composed of piping. A pump (not shown) may be provided in the heating circulation path 30. The pump delivers the treatment liquid in the heating circulation path 30. As a result, the treatment liquid flows and circulates through the heating circulation path 30 and the treatment liquid flow path 222. The treatment liquid is not particularly limited, but is, for example, pure water.

[0033] The heat exchanger 22 exchanges heat between the refrigerant flowing through the refrigerant flow path 221 and the treatment liquid flowing through the treatment liquid flow path 222. Specifically, heat is transferred from the high-temperature, high-pressure refrigerant to the treatment liquid in the heat exchanger 22. As a result, the refrigerant is cooled and liquefied, while the treatment liquid is heated.

[0034] A portion of the processing liquid heated by the heat pump device 20 is supplied to each substrate processing apparatus 10 (specifically, substrate processing apparatus 10A and substrate processing apparatus 10B) through a processing liquid supply path 31 branched off from the heating circulation path 30, as described below.

[0035] The refrigerant from the heat exchanger 22 flows through the refrigerant circuit 21 toward the expansion valve 25. The refrigerant expands in the expansion valve 25. The low-temperature, low-pressure refrigerant after expansion flows through the refrigerant circuit 21 toward the heat exchanger 23 and flows into the heat exchanger 23.

[0036] A refrigerant flow path 231 through which the refrigerant flows is formed in the heat exchanger 23. In the example of FIG. 1, a cooling liquid flow path 232 through which the cooling liquid flows is also formed in the heat exchanger 23. In the example of FIG. 1, the upstream end of the cooling liquid flow path 232 is connected to the downstream end of the cooling circulation path 40, and the downstream end of the cooling liquid flow path 232 is connected to the upstream end of the cooling circulation path 40. The cooling circulation path 40 is a flow path through which the cooling liquid cooled by the heat pump device 20 flows again toward the heat pump device 20. In other words, the cooling circulation path 40 is a flow path for circulating the cooling liquid from the heat pump device 20 back to the heat pump device 20. The cooling circulation path 40 is mainly composed of piping. A pump (not shown) may be provided in the cooling circulation path 40. The pump sends the cooling liquid in the cooling circulation path 40. As a result, the cooling liquid flows and circulates through the cooling circulation path 40 and the cooling liquid flow path 232. The cooling liquid is not particularly limited, but is, for example, pure water.

[0037] The heat exchanger 23 exchanges heat between the refrigerant flowing through the refrigerant flow path 231 and the cooling liquid flowing through the cooling liquid flow path 232. Specifically, in the heat exchanger 23, heat is transferred from the cooling liquid to the refrigerant. As a result, the refrigerant is heated and vaporized, while the cooling liquid is cooled. The amount of heat transferred from the cooling liquid to the refrigerant in the heat exchanger 23 is ideally equal to the amount of heat transferred from the refrigerant to the treatment liquid in the heat exchanger 22.

[0038] In the example of FIG. 1, a portion of the cooling liquid cooled by the heat pump device 20 is supplied to each substrate processing apparatus (specifically, substrate processing apparatus 10C and substrate processing apparatus 10D described below) through a cooling liquid supply path 41 branched off from the cooling circulation path 40, as described below.

[0039] The heat exchangers 22 and 23 are made of, for example, a thermally conductive resin. For example, a resin such as polypropylene or polyethylene can be used as the thermally conductive resin. It is desirable that the thermal conductivity of the material constituting the heat exchangers 22 and 23 is higher than the thermal conductivity of the material of the pipes constituting any one of the refrigerant circulation path 21, the heating circulation path 30, the cooling circulation path 40, the treatment liquid supply path 31, the cooling liquid supply path 41 (described later), and the cooling liquid return path 42 (described later).

[0040] Next, the piping system on the supply side of the processing liquid to the substrate processing apparatus 10 will be described in more detail. The processing liquid supply path 31 is a flow path branched from the heating circulation path 30. The processing liquid flows through the processing liquid supply path 31 from the heating circulation path 30 toward the substrate processing apparatus 10. In other words, the processing liquid supply path 31 is a flow path for supplying the processing liquid to the substrate processing apparatus 10. The processing liquid supply path 31 is mainly composed of piping, and connects the heating circulation path 30 and the substrate processing apparatus 10. In the example of FIG. 1, the processing liquid supply paths 31 are provided one-to-one for the multiple substrate processing apparatuses 10 to which the processing liquid is to be supplied. A part of the processing liquid in the heating circulation path 30 is supplied to the substrate processing apparatus 10 through each processing liquid supply path 31.

[0041] The processing liquid supplied to the substrate processing apparatus 10 is discharged to the outside through the discharge path 118, as described in detail later. Since the processing liquid is discharged to the outside in this manner, the amount of the processing liquid circulating through the heating circulation path 30 decreases by the amount of the processing liquid supplied to the substrate processing apparatus 10. Therefore, in this embodiment, a processing liquid replenishing unit 60 is provided.

[0042] The processing liquid replenishment section 60 supplies the processing liquid to the heating circulation path 30. As a result, the processing liquid is replenished in the heating circulation path 30. In the example of FIG. 1, the processing liquid replenishment section 60 includes a processing liquid replenishment path 61 and a replenishment tank 62. The processing liquid replenishment path 61 is mainly composed of piping, and its downstream end is connected to the heating circulation path 30. As a more specific example, the downstream end of the processing liquid replenishment path 61 is connected to the heating circulation path 30 upstream of the heat exchanger 22 and downstream of all upstream ends of the processing liquid supply path 31. The upstream end of the processing liquid replenishment path 61 is connected to a replenishment tank 62. The replenishment tank 62 stores the processing liquid. The processing liquid from the replenishment tank 62 is supplied to the heating circulation path 30 through the processing liquid replenishment path 61.

[0043] As described above, the processing liquid is heated in the heat exchanger 22. Immediately after the heat exchanger 22, the temperature of the processing liquid is, for example, about 60° C. to 70° C. Then, a part of the heated processing liquid flows from the heating circulation path 30 into the processing liquid supply path 31, and is supplied to each substrate processing apparatus 10 through the processing liquid supply path 31. On the other hand, the remaining part of the processing liquid flows directly downstream through the heating circulation path 30.

[0044] The processing liquid replenishment unit 60 supplies the processing liquid, for example, at room temperature, to the heating circulation path 30. Therefore, the temperature of the processing liquid is reduced downstream of the joining point of the heating circulation path 30 and the processing liquid replenishment path 61. For example, the temperature of the processing liquid is reduced to about 30°C. Then, this low-temperature processing liquid flows into the heat exchanger 22, where it is heated again to about 60°C to 70°C.

[0045] Next, the piping system on the supply side of the cooling liquid to the substrate processing apparatus 10 (specifically, the substrate processing apparatus 10C and the substrate processing apparatus 10D) will be described in more detail. In the example of FIG. 1, a cooling liquid supply path 41 and a cooling liquid return path 42 are provided between the cooling circulation path 40 and each substrate processing apparatus 10 (specifically, the substrate processing apparatus 10C and the substrate processing apparatus 10D). The cooling liquid supply path 41 is mainly composed of a pipe, and its upstream end is connected to the cooling circulation path 40, and the downstream end of the cooling liquid supply path 41 is connected to the substrate processing apparatus 10. The cooling liquid return path 42 is mainly composed of a pipe, and its downstream end is connected to the cooling circulation path 40, and the upstream end of the cooling liquid return path 42 is connected to the substrate processing apparatus 10. In the example of FIG. 1, a pair of the cooling liquid supply path 41 and the cooling liquid return path 42 is provided corresponding to each of the substrate processing apparatuses 10 (for example, the substrate processing apparatus 10C and the substrate processing apparatus 10D) to which the cooling liquid is to be supplied.

[0046] A part of the cooling liquid in the cooling circulation path 40 is supplied to the substrate processing apparatus 10 through a cooling liquid supply path 41. This cooling liquid is used to cool equipment (components) in the substrate processing apparatus 10, as described below. That is, the cooling liquid cools the components by receiving heat from the components. After cooling the components, the cooling liquid returns to the cooling circulation path 40 again through a cooling liquid return path 42.

[0047] 1, the cooling circuit 40 is provided with a cooling unit 48. Specifically, the cooling unit 48 is provided in the cooling circuit 40 upstream of the upstream ends of all the cooling liquid supply paths 41 and downstream of the heat exchanger 23. The cooling unit 48 cools the cooling liquid flowing through the cooling circuit 40. The cooling unit 48 is, for example, a cooling water circulator (a so-called chiller).

[0048] As described above, the cooling liquid is cooled in the heat exchanger 23. The temperature of the cooling liquid immediately after the heat exchanger 23 is, for example, about 20° C. The cooling liquid flows through the cooling circulation path 40 from the heat exchanger 23 toward the cooling unit 48 and flows into the cooling unit 48. The cooling unit 48 cools the cooling liquid so that the temperature of the cooling liquid becomes a temperature suitable for cooling the equipment of the substrate processing apparatus 10. The cooling liquid cooled by the cooling unit 48 is supplied from the cooling circulation path 40 through each cooling liquid supply path 41 to each substrate processing apparatus 10, cools the equipment of each substrate processing apparatus 10, and returns to the cooling circulation path 40 through each cooling liquid return path 42. Then, the cooling liquid flows through the cooling circulation path 40 toward the heat exchanger 23 and flows into the heat exchanger 23. The temperature of the cooling liquid immediately before the heat exchanger 23 is, for example, about 30° C. The cooling liquid is cooled again in the heat exchanger 23 to, for example, about 20° C.

[0049] The substrate processing system 100 also includes a control unit 90. The control unit 90 controls various components of the substrate processing system 100. For example, the control unit 90 includes an arithmetic processing unit 91 and a storage medium 92. The arithmetic processing unit 91 is a processing unit such as a CPU (Central Processing Unit) that performs various arithmetic processing. The storage medium 92 includes, for example, a temporary storage medium such as a ROM (Read Only Memory) that is a read-only memory that stores a basic program, a RAM (Random Access Memory) that is a readable and writable memory that stores various information, and a non-temporary storage medium such as a magnetic disk that stores control software or data. The arithmetic processing unit 91 of the control unit 90 executes a predetermined processing program, whereby each operating mechanism of the substrate processing system 100 is controlled by the control unit 90, and processing in the substrate processing system 100 progresses. The control unit 90 may be realized by a dedicated hardware circuit that does not require software to realize its function.

[0050] In addition, although a single control unit 90 is shown in the example of Figure 1, a control unit 90 may be provided for each of the components such as each substrate processing apparatus 10 and heat pump apparatus 20, and these may communicate with each other to control the substrate processing system 100.

[0051] Next, a specific example of the internal configuration of the substrate processing apparatus 10 will be described. Fig. 2 is a diagram that shows a schematic example of the configuration of the substrate processing apparatus 10. In the example of Fig. 2, two types of substrate processing apparatuses 10 are shown. Specifically, substrate processing apparatuses 10A and 10B, which are targets of the supply of processing liquid, are shown as processing apparatuses that supply processing liquid to substrates W, and substrate processing apparatuses 10C and 10D, which are targets of the supply of cooling liquid, are shown as processing apparatuses that perform heat treatment on substrates W.

[0052] Each of the substrate processing apparatus 10A and the substrate processing apparatus 10B includes one or more processing units 11, and the example of Fig. 2 shows a plurality of processing units 11. In the example of Fig. 2, each processing unit 11 includes a chamber 111, a substrate holder 112, a nozzle 114, a nozzle 115, and a guard 116.

[0053] The substrate holding part 112 is provided in the chamber 111 and holds the substrate W in a horizontal position. The horizontal position here means a position in which the thickness direction of the substrate W is aligned with the vertical direction. The substrate W is transported into the chamber 111 by a substrate transport part (not shown) and handed over to the substrate holding part 112. In the example of FIG. 2, the substrate holding part 112 includes a plurality of chuck pins 113. Each of the plurality of chuck pins 113 is provided so as to be displaceable between a chuck position in contact with the periphery of the substrate W and a release position away from the periphery of the substrate W. When the plurality of chuck pins 113 move to their respective chuck positions, the plurality of chuck pins 113 hold the substrate W. When the plurality of chuck pins 113 move to their respective release positions, the substrate W is released from its holding.

[0054] The substrate holder 112 also includes a motor (not shown) that rotates the substrate W around a rotation axis Q1. The rotation axis Q1 passes through the center of the substrate W and is an axis along the vertical direction. Such a substrate holder 112 may also be called a spin chuck.

[0055] The nozzle 114 is provided in the chamber 111 and is used to supply the processing liquid to the upper surface of the substrate W. The nozzle 115 is provided in the chamber 111 and is used to supply the processing liquid to the lower surface of the substrate W. The nozzle 114 is provided vertically above the upper surface of the substrate W, and the nozzle 115 is provided vertically below the lower surface of the substrate W. The nozzle 114 ejects the processing liquid toward the upper surface of the substrate W, and the nozzle 115 ejects the processing liquid toward the lower surface of the substrate W.

[0056] Nozzle 114 and nozzle 115 are connected to processing liquid supply path 31. Processing liquid supply path 31 includes supply path 31a, supply path 31b, supply path 31c, and supply path 31d. The upstream end of supply path 31a corresponds to the upstream end of processing liquid supply path 31, and is connected to heating circulation path 30. Supply path 31a is connected to the upstream ends of a plurality of supply paths 31b provided corresponding to the plurality of processing units 11, respectively. The downstream ends of each supply path 31b are connected to the upstream ends of supply paths 31c and 31d. The downstream end of supply path 31c is connected to nozzle 114, and the downstream end of supply path 31d is connected to nozzle 115.

[0057] Supply path 31c is provided with a valve 32. When valve 32 is opened, the processing liquid is supplied from heating circulation path 30 through supply paths 31a, 31b and 31c to nozzle 114, and the processing liquid is discharged from nozzle 114 onto the upper surface of substrate W. When valve 32 is closed, the discharge of the processing liquid from nozzle 114 stops.

[0058] Supply path 31d is provided with a valve 33. When valve 33 is opened, the processing liquid is supplied from heating circulation path 30 through supply paths 31a, 31b and 31d to nozzle 115, and the processing liquid is discharged from nozzle 115 onto the lower surface of substrate W. When valve 33 is closed, the discharge of the processing liquid from nozzle 115 stops.

[0059] In the example of FIG. 2, a heater 34 is provided in the supply path 31b. The heater 34 heats the processing liquid flowing through the processing liquid supply path 31 (specifically, the supply path 31b). The heater 34 heats the processing liquid so that the temperature of the processing liquid landing on the substrate W is within a predetermined temperature range including a predetermined process temperature. The heater 34 may be a heater of various types, for example, an electric resistance type heater. The heater 34 adjusts the temperature of the processing liquid to the process temperature by increasing the temperature of the processing liquid by, for example, a value between 10° C. and 20° C.

[0060] With the substrate holder 112 rotating the substrate W about the rotation axis Q1, the valve 32 is opened, and a high-temperature processing liquid is discharged from the nozzle 114 onto the upper surface of the rotating substrate W. The processing liquid that has landed on the upper surface of the substrate W spreads over the upper surface of the substrate W due to centrifugal force accompanying the rotation, and is scattered outward from the periphery of the substrate W. In this way, the upper surface of the substrate W can be processed.

[0061] Furthermore, while the substrate holder 112 rotates the substrate W about the rotation axis Q1, the valve 33 opens, and a high-temperature processing liquid is discharged from the nozzle 115 onto the underside of the rotating substrate W. The processing liquid that has landed on the underside of the substrate W spreads over the underside of the substrate W due to centrifugal force accompanying the rotation, and is scattered outward from the periphery of the substrate W. This allows the underside of the substrate W to be processed with the processing liquid.

[0062] The guard 116 has a cylindrical shape surrounding the substrate holding part 112, and receives the processing liquid splashed from the periphery of the substrate W. The processing liquid received on the inner peripheral surface of the guard 116 flows down along the inner peripheral surface and is received in a cup 117. The upstream end of a discharge path 118 is connected to the cup 117, and the processing liquid is discharged to the outside through the discharge path 118. The discharge path 118 is mainly constituted by piping.

[0063] In the example of FIG. 2, the substrate processing apparatus 10C and the substrate processing apparatus 10D include a heat treatment unit 12. In the example of FIG. 2, the heat treatment unit 12 includes a chamber 121, a substrate holding part 122, and a heater 123. The substrate holding part 122 is provided in the chamber 121 and holds the substrate W in a horizontal position. The substrate holding part 122 includes, for example, a support table that supports the peripheral part of the lower surface of the substrate W. The substrate W is transported into the chamber 121 by a substrate transport part (not shown) and handed over to the substrate holding part 122. The heater 123 is provided in the chamber 121 and heats the substrate W held by the substrate holding part 122. This allows the substrate W to be subjected to heat treatment. This heat treatment also increases the temperature of the chamber 121 as a by-product.

[0064] 2, the downstream end of the coolant supply path 41 is connected to the upstream end of the cooling path 43, and the downstream end of the cooling path 43 is connected to the upstream end of the coolant return path 42. The cooling path 43 is mainly composed of piping and is arranged to surround the chamber 121. As a specific example, the cooling path 43 is provided along the outer wall of the chamber 121. Note that the cooling path 43 may be embedded in the side wall of the chamber 121 or provided along the inner wall of the chamber 121.

[0065] The processing liquid from the cooling circulation path 40 flows through the cooling liquid supply path 41, the cooling path 43, and the cooling liquid return path 42 in this order, and returns to the cooling circulation path 40 again. With this, heat is transferred from the high-temperature chamber 121 to the low-temperature cooling liquid in the cooling path 43, so that the chamber 121 can be cooled. Therefore, a material with low heat resistance can be used as the material of the chamber 121. In other words, there is no need to use a material with high heat resistance, and the material selectivity of the chamber 121 can be improved.

[0066] 2, the chamber 121 is shown as the object to be cooled, but this is not necessarily limited thereto. Any component of the substrate processing apparatus 10 may be adopted as the object to be cooled.

[0067] <Effects of the embodiment> As described above, in the substrate processing system 100, the heat pump unit 20 heats the processing liquid. Since the heat pump unit 20 can heat the processing liquid with high thermal efficiency, the efficiency of the substrate processing system 100 can be improved.

[0068] Furthermore, the substrate processing system 100 is provided with a heating circulation path 30. This allows a portion of the processing liquid heated by the heat exchanger 22 to flow back into the heat exchanger 22, so that the temperature of the processing liquid flowing through the heating circulation path 30 can be adjusted with higher accuracy.

[0069] In the above example, the processing liquid supplied to the substrate processing apparatus 10 is discharged to the outside through the discharge path 118 without returning to the heating circulation path 30, but the processing liquid refill unit 60 supplies the processing liquid to the heating circulation path 30. This makes it possible to compensate for the decrease in the amount of the processing liquid circulating in the heating circulation path 30 that accompanies the supply of the processing liquid to the substrate processing apparatus 10. This makes it possible to continue to supply the processing liquid appropriately to the substrate processing apparatus 10.

[0070] In the above example, the heaters 34 are provided corresponding to the individual processing units 11 of the substrate processing apparatus 10. That is, the heaters 34 are provided at positions closer to the nozzles 114 and 115 of each substrate processing apparatus 10 than the heat pump device 20. Therefore, the temperature of the processing liquid discharged from the nozzles 114 and 115 can be adjusted to the process temperature with higher accuracy by the heaters 34. Therefore, the processing of the substrates W can be performed more appropriately.

[0071] In the above example, a thermally conductive resin such as polypropylene or polyethylene is used as the material of the heat exchanger 22. Since such a resin is formed with high purity, impurities are hardly eluted from the heat exchanger 22 into the processing liquid even when the processing liquid passes through the processing liquid flow path 222 of the heat exchanger 22. Therefore, the substrate processing apparatus 10 can process the substrate W with a clean processing liquid.

[0072] It is not necessary that the entire heat exchanger 22 is made of the resin, and only the portion that constitutes the treatment liquid flow path 222 may be made of the resin.

[0073] On the other hand, since the density of such resin is relatively small, the refrigerant may mix from the refrigerant flow path 221 into the processing liquid flow path 222 in the heat exchanger 22. However, in the above example, a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant. Even if carbon dioxide or ammonia mixes into the processing liquid, it is unlikely that they will affect the processing of the substrate W. Therefore, even if the refrigerant mixes into the processing liquid, the processing of the substrate W can be performed more appropriately compared to other refrigerants.

[0074] In the above example, the cooling liquid to be cooled by the heat pump device 20 is used to cool the equipment of the substrate processing apparatus 10C and the substrate processing apparatus 10D. This allows the energy on the cooling side of the heat pump device 20 to be utilized, thereby further improving the efficiency of the substrate processing system 100.

[0075] In the heat pump device 20, the amount of heat transferred from the refrigerant to the processing liquid and the amount of heat transferred from the cooling liquid to the refrigerant are approximately equal to each other. However, in the above example, the cooling unit 48 is also provided. Therefore, the cooling unit 48 can adjust the temperature of the cooling liquid independently of the temperature of the processing liquid immediately after the heat exchanger 22. Therefore, the adjustment range of the temperature of the cooling liquid supplied to the substrate processing device 10 can be expanded.

[0076] In the above example, the cooling unit 48 is provided in the cooling circulation path 40. The cooling liquid cooled by the cooling unit 48 is supplied to the substrate processing apparatus 10C and the substrate processing apparatus 10D through the respective cooling liquid supply paths 41. Since the lengths of the cooling liquid supply paths 41 may differ between the substrate processing apparatus 10C and the substrate processing apparatus 10D, the temperature of the cooling liquid may vary between the substrate processing apparatus 10C and the substrate processing apparatus 10D. Therefore, the temperature of the cooling target (e.g., the chamber 121) may vary between the substrate processing apparatus 10C and the substrate processing apparatus 10D. However, compared with the temperature of the processing liquid, the temperature of the cooling target has almost no effect on the processing of the substrate W. Therefore, even if the temperature of the cooling liquid varies, no problem occurs in the processing of the substrate W.

[0077] In the above-described example, since the cooling section 48 is provided in the cooling circulation path 40, the configuration of the substrate processing system 100 can be simplified and the manufacturing costs can be reduced compared to the case where separate cooling sections 48 are provided for the substrate processing apparatus 10C and the substrate processing apparatus 10D.

[0078] <Modification> In the example of FIG. 1, the cooling liquid is supplied to a substrate processing apparatus 10 (substrate processing apparatus 10C and substrate processing apparatus 10D) other than the substrate processing apparatus 10 (substrate processing apparatus 10A and substrate processing apparatus 10B) to which a high-temperature processing liquid is supplied. However, this is not necessarily limited to this. For example, when equipment requiring cooling is provided in the substrate processing apparatus 10A and substrate processing apparatus 10B, the cooling liquid may be supplied to the substrate processing apparatus 10A and substrate processing apparatus 10B. In this case, the cooling path 43 may be appropriately arranged in the substrate processing apparatus 10A and substrate processing apparatus 10B along the equipment to be cooled.

[0079] In the above example, the cooling liquid cools the equipment of the substrate processing apparatus 10, but the cooling liquid may be supplied to the substrate W. In this case, the cooling liquid corresponds to the processing liquid. FIG. 3 is a diagram showing an example of a part of the configuration of the substrate processing system 100. In the example of FIG. 3, the upstream end of a cooling liquid supply path 44 is connected to the cooling circulation path 40. The cooling liquid supply path 44 is also mainly composed of piping. The cooling liquid is supplied to the substrate processing apparatus 10 through the cooling liquid supply path 44. In the example of FIG. 3, the substrate processing apparatus 10 further includes a nozzle 1141. The nozzle 1141 ejects the cooling liquid onto the upper surface of the substrate W. The cooling liquid is, for example, pure water.

[0080] As shown in FIG. 3, the nozzle 1141 is connected to the cooling liquid supply path 44. The cooling liquid supply path 44 includes a supply path 44a, a supply path 44b, a supply path 44c, and a supply path 44d. The upstream end of the supply path 44a corresponds to the upstream end of the cooling liquid supply path 44, and is connected to the cooling circulation path 40. The supply path 44a is connected to the upstream ends of a plurality of supply paths 44b provided corresponding to a plurality of processing units 11. The downstream end of each supply path 44b is connected to the upstream ends of the supply paths 44c and 44d. The downstream end of the supply path 44c is connected to the nozzle 1141, and the downstream end of the supply path 44d is connected to the nozzle 115.

[0081] Supply path 44c is provided with a valve 45. When valve 45 is opened, cooling liquid is supplied from cooling circulation path 40 through supply paths 44a, 44b, and 44c to nozzle 1141, and is discharged from nozzle 1141 onto the upper surface of substrate W. When valve 45 is closed, the discharge of cooling liquid from nozzle 1141 stops.

[0082] Supply path 44d is provided with a valve 46. When valve 46 is opened, cooling liquid is supplied from cooling circulation path 40 through supply paths 44a, 44b and 44d to nozzle 115, and the cooling liquid is discharged from nozzle 115 onto the lower surface of substrate W. When valve 46 is closed, discharge of processing liquid from nozzle 115 stops.

[0083] The cooling liquid is splashed outward from the periphery of the substrate W and discharged to the outside through the guard 116, the cup 117, and the discharge path 118. In this case, the amount of the cooling liquid circulating through the cooling circulation path 40 may decrease. Therefore, in the example of FIG. 3, the substrate processing system 100 is provided with a cooling liquid refilling unit 65. The cooling liquid refilling unit 65 supplies the cooling liquid to the cooling circulation path 40. In the example of FIG. 3, the cooling liquid refilling unit 65 includes a cooling liquid refilling path 66 and a refilling tank 67. The cooling liquid refilling path 66 is mainly composed of a pipe, and its downstream end is connected to the cooling circulation path 40. As a specific example, the downstream end of the cooling liquid refilling path 66 is connected to the cooling circulation path 40 upstream of the heat exchanger 23 and downstream of all the cooling liquid supply paths 44. The upstream end of the cooling liquid refilling path 66 is connected to the refilling tank 67. The refilling tank 67 stores the cooling liquid. The cooling liquid from the refilling tank 67 is supplied to the cooling circulation path 40 through the cooling liquid refilling path 66. This allows the cooling liquid to be replenished in the cooling circuit 40. Note that if the cooling liquid is the same type of liquid as the processing liquid, the replenishment tank 67 may be the same tank as the replenishment tank 62.

[0084] <Control of heater 34> Each processing unit 11 supplies a processing liquid to the loaded substrate W to perform processing. Initially, the temperature of the processing liquid supply path 31 is not high. In this way, when a high-temperature processing liquid flows through the low-temperature processing liquid supply path 31, heat is transferred from the processing liquid to the processing liquid supply path 31, and the temperature of the processing liquid may decrease. Therefore, initially, even with the heating operation of the heater 34, the temperature of the processing liquid may not be able to be raised to the process temperature.

[0085] Therefore, the control unit 90 of the substrate processing apparatus 10 may cause the heater 34 to start a heating operation before opening the valves 32 and 33. FIG. 4 is a flow chart showing an example of heater start control. The control unit 90 judges whether or not information on the substrates W (hereinafter referred to as pre-operation information) has been received (step S1). The pre-operation information includes various information such as the number of substrates W to be loaded into the substrate processing apparatus 10 and a recipe showing a procedure for processing the substrates W. The pre-operation information is transmitted to the control unit 90 from, for example, a host computer or an apparatus upstream of the substrate processing apparatus 10, or input to the control unit 90 by an operator via a user interface (not shown).

[0086] If the control unit 90 has not yet received the pre-operation information, the substrate processing apparatus 10 is not yet scheduled to process a substrate W, and therefore executes step S1 again. On the other hand, when the control unit 90 has received the pre-operation information, the control unit 90 causes the heater 34 of the substrate processing apparatus 10 to start a heating operation (step S2).

[0087] As described above, the control unit 90 starts the heating operation of the heater 34 in response to receiving the pre-operation information. In this way, the heater 34 starts the heating operation before the processing liquid is supplied to the substrate W, more specifically, before the substrate W is loaded into each processing unit 11. Thus, the heater 34 can preheat the processing liquid supply path 31. Therefore, even when the supply of the processing liquid to the substrate W starts, the heater 34 can adjust the processing liquid to the process temperature with high accuracy, and the processing unit 11 can perform the processing on the substrate W more appropriately.

[0088] <Second embodiment> The configuration of the substrate processing system 100 according to the second embodiment is similar to that of the first embodiment. In the second embodiment, an example of the internal configuration of the heater 34 will be described.

[0089] FIG. 5 is a diagram illustrating an example of the configuration of the heater 34 according to the second embodiment. In the example of FIG. 5, the heater 34 is a heat pump. Specifically, the heater 34 includes a refrigerant circulation path 341, a heat exchanger 342 for heating, a heat exchanger 343 for cooling, a compressor 344, and an expansion valve 345. The refrigerant circulation path 341 is mainly composed of piping. A refrigerant flows through the refrigerant circulation path 341. The refrigerant is a carbon dioxide refrigerant or an ammonia refrigerant. The refrigerant circulation path 341 is provided with a heat exchanger 342, a heat exchanger 343, a compressor 344, and an expansion valve 345. These are similar to those of the heat pump device 20, so repeated explanations will be avoided here. The heat exchanger 343 may be a heat exchanger that exchanges heat between a refrigerant and a cooling liquid, or may be a heat exchanger that exchanges heat between a refrigerant and outside air.

[0090] In the second embodiment, the heater 34 is a heat pump, and therefore the processing liquid can be heated with high thermal efficiency, thereby further improving the efficiency of the substrate processing system 100.

[0091] <Third embodiment> In the first and second embodiments, a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant. Even if these refrigerants are mixed into the processing liquid, they are unlikely to affect the processing of the substrate W. However, if the concentration of the refrigerant in the processing liquid becomes very high, it may adversely affect the processing of the substrate W. Furthermore, when a refrigerant other than a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant, even a small amount of the refrigerant mixed into the processing liquid may adversely affect the processing of the substrate W.

[0092] Therefore, the third embodiment aims to provide a technique capable of monitoring the concentration of the refrigerant in the liquid to be treated.

[0093] Fig. 6 is a diagram illustrating an example of a part of the configuration of a substrate processing system 100A according to a third embodiment. In the example of Fig. 6, the configuration on the side to be cooled relative to the heat pump unit 20 is omitted in order to avoid complication of the drawing.

[0094] The substrate processing system 100A differs from the substrate processing system 100 in the presence or absence of a refrigerant concentration sensor 70. The refrigerant concentration sensor 70 measures the refrigerant concentration in the processing liquid flowing through the heating circulation path 30, and outputs a measurement result signal indicating the measurement result to the control unit 90. When a carbon dioxide refrigerant is used as the refrigerant, the refrigerant concentration sensor 70 measures the concentration of carbon dioxide dissolved in the processing liquid. When ammonia is used as the refrigerant, the refrigerant concentration sensor 70 measures the concentration of ammonia dissolved in the processing liquid. In the example of FIG. 6, the refrigerant concentration sensor 70 is provided in the heating circulation path 30 downstream of all upstream ends of the processing liquid supply path 31 and upstream of the downstream end of the processing liquid replenishment path 61.

[0095] 6, the substrate processing system 100A is provided with a notification unit 93. The notification unit 93 notifies an operator of various pieces of information. For example, the notification unit 93 includes at least one of a display such as a liquid crystal display, and a speaker. The display displays the various pieces of information, and the speaker outputs the various pieces of information by voice.

[0096] The control unit 90 monitors and controls the refrigerant concentration in the treatment liquid based on the measurement result of the refrigerant concentration sensor 70. Fig. 7 is a flowchart showing an example of the monitoring control. First, the refrigerant concentration sensor 70 measures the refrigerant concentration in the treatment liquid (step S11). The refrigerant concentration sensor 70 outputs a measurement result signal indicating the measured refrigerant concentration to the control unit 90.

[0097] Next, the control unit 90 determines whether the concentration of the coolant measured by the coolant concentration sensor 70 is equal to or greater than a predetermined coolant reference value (step S12). The coolant reference value is, for example, a value equal to or less than the coolant concentration at which the degree of adverse effect of the processing on the substrate W becomes tolerable. When the concentration of the coolant is less than the coolant reference value, step S11 is executed again.

[0098] When the concentration of the refrigerant is equal to or higher than the refrigerant reference value, the control unit 90 executes at least one of a notification control and a stop control. The stop control is a control for stopping the substrate processing system 100A. This makes it possible to prevent problems in processing the substrate W caused by the mixing of the refrigerant into the processing liquid.

[0099] The notification control is a control in which the control unit 90 causes the notification unit 93 to issue a notification. If the notification unit 93 includes a display, the display displays information indicating that the refrigerant concentration is equal to or higher than the refrigerant reference value, and if the notification unit 93 includes a speaker, the notification unit 93 outputs the information indicating that the refrigerant concentration is equal to or higher than the refrigerant reference value by voice.

[0100] Based on this notification, an operator can recognize that the refrigerant concentration of the liquid being treated is increasing, and can take appropriate measures, such as replacing the heat exchanger 22.

[0101] <Fourth embodiment> 8 is a diagram showing an example of a configuration of a substrate processing system 100B according to the fourth embodiment. The substrate processing system 100B differs from the substrate processing system 100 in that a heat retaining unit 50 is provided.

[0102] The heat retention unit 50 is supplied with a high-temperature processing liquid from the substrate processing apparatus 10 through the drain path 118. Hereinafter, the processing liquid flowing from the substrate processing apparatus 10 into the drain path 118 is also referred to as drain. The heat retention unit 50 uses the heat of the high-temperature drain liquid to keep the heating circulation path 30 warm. In other words, the heat retention unit 50 suppresses thermal diffusion from the heating circulation path 30 to the outside.

[0103] FIG. 9 is a diagram showing an example of a specific configuration of the substrate processing apparatus 10 and the heat retention unit 50. In the example of FIG. 9, the substrate processing apparatus 10 further includes a nozzle 1142. The nozzle 1142 supplies a high-temperature processing liquid to the upper surface of the substrate W. The nozzle 1142 is connected to a downstream end of a processing liquid supply path 311. An upstream end of the processing liquid supply path 311 is connected to a processing liquid supply source (not shown). The processing liquid supply path 311 is also mainly composed of piping. The processing liquid supply source supplies a high-temperature processing liquid to the processing liquid supply path 311. The processing liquid includes at least one of, for example, SPM (sulfuric acid-hydrogen peroxide solution) at about 100° C. to 120° C., SC-1 (ammonia-hydrogen peroxide solution) at about 75° C. to 85° C., and SC-2 (hydrochloric acid-hydrogen peroxide solution) at about 75° C. to 85° C.

[0104] 9, a plurality of guards 116, a plurality of cups 117, and a plurality of discharge paths 118 are provided. Each guard 116 has a coaxial cylindrical shape, and each guard 116 is provided so as to be movable up and down. The cups 117 are provided corresponding to the plurality of guards 116, and receive the processing liquid flowing down from the corresponding guards 116. The discharge paths 118 are provided corresponding to the plurality of cups 117, and discharge the processing liquid received by the corresponding cups 117.

[0105] When the guard 116 corresponding to the type of processing liquid is raised and that type of processing liquid is supplied to the substrate W, the processing liquid splashes from the periphery of the substrate W and is received by the guard 116, and is discharged through the corresponding cup 117 and discharge path 118. This makes it possible to classify and discharge the processing liquids by type.

[0106] Here, the processing liquid discharged from the nozzle 1142 is supplied to the heat retention unit 50 through the guard 116, the cup 117, and the discharge path 118 corresponding to the processing liquid. Note that the waste liquid supplied to the heat retention unit 50 is not limited to the high-temperature processing liquid discharged from the nozzle 1142, and may be the high-temperature processing liquid discharged from the nozzle 114 or the nozzle 115.

[0107] 9, the heat retention unit 50 includes a tank 51. High-temperature waste liquid is supplied to the tank 51 from a discharge path 118. As a result, the waste liquid is stored in the tank 51.

[0108] 9, a part of the heating circuit 30 is immersed in the waste liquid in the tank 51. The part of the heating circuit 30 is, for example, at least a part of the heating circuit 30 that is downstream of all upstream ends of the treatment liquid supply paths 31 and upstream of the heat exchanger 22. In the example of Fig. 9, the part of the heating circuit 30 has a U-shape and is immersed in the waste liquid in the tank 51. The other part of the heating circuit 30 extends to the outside of the tank 51 through an upper opening of the tank 51.

[0109] Since a part of the heating circuit 30 is immersed in the high-temperature waste liquid in this manner, heat is transferred from the high-temperature waste liquid to the part of the heating circuit 30. In other words, the temperature of the part of the heating circuit 30 can be increased.

[0110] As described above, in the fourth embodiment, the heat of the high-temperature waste liquid discharged to the outside through the discharge path 118 is utilized to keep the heating circulation path 30 warm. Therefore, the heat of the waste liquid can be effectively utilized, and the efficiency of the substrate processing system 100B can be further improved.

[0111] In the example of FIG. 8, the downstream end of the processing liquid replenishment path 61 of the processing liquid replenishment unit 60 is connected to the heating circulation path 30 between the heat exchanger 22 and the heat retention unit 50. However, this is not necessarily limited to this. The downstream end of the processing liquid replenishment path 61 may be connected to the heating circulation path 30 upstream of the heat retention unit 50 and downstream of all upstream ends of the processing liquid supply path 31. In the example of FIG. 8, this processing liquid replenishment path 61 is shown by a two-dot chain line. In this case, a lower temperature processing liquid flows in a part of the heating circulation path 30 immersed in the tank 51. This is because the temperature of the processing liquid decreases due to the joining of the processing liquid from the processing liquid replenishment unit 60 to the heating circulation path 30, and the amount of heat transferred from the waste liquid to the heating circulation path 30 in the tank 51 increases. Therefore, the amount of heat of the waste liquid can be more effectively utilized, and the efficiency of the substrate processing system 100 can be improved.

[0112] Next, the discharge of waste liquid from tank 51 will be described. In the example of Fig. 9, the upstream end of discharge path 52 is connected to tank 51. Discharge path 52 is mainly composed of piping. Discharge path 52 is provided with valve 53, and when valve 53 is opened, waste liquid from tank 51 is discharged to the outside through discharge path 52. When valve 53 is closed, the discharge of waste liquid stops.

[0113] 9, a temperature sensor 54 is provided in the heating circuit 30 between the heat retention section 50 and the heat exchanger 22. The temperature sensor 54 detects the temperature of the treatment liquid flowing through the heating circuit 30, and outputs a measurement result signal indicative of the measurement result to the control section 90.

[0114] Here, the control unit 90 controls the discharge of the waste liquid from the tank 51 based on the temperature measured by the temperature sensor 54. Fig. 10 is a flow chart showing an example of the discharge control. First, the temperature sensor 54 measures the temperature of the treatment liquid in the heating circulation path 30 (step S21). The temperature sensor 54 outputs a measurement result signal indicating the measured temperature to the control unit 90.

[0115] Next, the control unit 90 determines whether or not the temperature measured by the temperature sensor 54 is equal to or higher than a predetermined temperature reference value (step S22). If the temperature is lower than the temperature reference value, step S21 is executed again.

[0116] When the temperature is equal to or higher than the temperature reference value, the control unit 90 opens the valve 53 (step S23). This causes the waste liquid in the tank 51 to be discharged to the outside through the discharge path 52. Thus, the amount of waste liquid stored in the tank 51 decreases over time. Therefore, the amount of heat provided to the heating circulation path 30 in the heat retention unit 50 decreases, and the temperature of the treatment liquid flowing into the heat exchanger 22 of the heating circulation path 30 decreases.

[0117] As described above, this discharge control makes it possible to avoid an excessive increase in the temperature of the treatment liquid flowing into the heat exchanger 22. This makes it possible to suppress a decrease in the utilization rate of the heat pump unit 20.

[0118] <Fifth embodiment> 11 is a diagram showing an example of a configuration of a substrate processing system 100C according to the fifth embodiment. The substrate processing system 100C differs from the substrate processing system 100B in that a waste liquid cooling unit 55 is provided.

[0119] The waste liquid cooling section 55 is supplied with high-temperature waste liquid from the substrate processing apparatus 10. The waste liquid cooling section 55 cools the waste liquid in the low-temperature cooling circulation path 40. In the example of Fig. 11, the waste liquid cooling section 55 is provided downstream of the heat retention section 50 in the flow of the waste liquid. In other words, the downstream end of the discharge path 52 of the heat retention section 50 is connected to the waste liquid cooling section 55, and the waste liquid is supplied from the heat retention section 50 through the discharge path 52 to the waste liquid cooling section 55.

[0120] FIG. 12 is a diagram showing a schematic example of the configuration of the effluent cooling section 55. In the example of FIG. 12, the effluent cooling section 55 includes a tank 56. The effluent is supplied to the tank 56. As a result, the tank 56 stores the effluent. In the example of FIG. 12, the effluent is supplied to the tank 56 from the heat retaining section 50 through the discharge path 52. As described above, in the heat retaining section 50, heat is transferred from the effluent to the heating circulation path 30, so that the temperature of the effluent also drops. Therefore, the effluent cooling section 55 is supplied with effluent whose temperature has been slightly lowered.

[0121] A part of the cooling circuit 40 is immersed in the drainage liquid in the tank 56. The part of the cooling circuit 40 is, for example, at least a part of the cooling circuit 40 downstream of all of the cooling liquid supply path 41 and the cooling liquid return path 42 and upstream of the heat exchanger 23. When the cooling liquid supply path 44 is connected to the cooling circuit 40, the part of the cooling circuit 40 immersed in the drainage liquid is, for example, at least a part of the cooling liquid supply path 41, the cooling liquid return path 42, and the cooling liquid supply path 44 downstream of all of the cooling liquid supply path 41, the cooling liquid return path 42, and the cooling liquid supply path 44 and upstream of the heat exchanger 23. In the example of FIG. 12, the part of the cooling circuit 40 has a U-shape and is immersed in the drainage liquid in the tank 56. The other part of the cooling circuit 40 extends to the outside of the tank 56 through the upper opening of the tank 56.

[0122] Since the part of the cooling circuit 40 is thus immersed in the hot waste liquid in the tank 56, heat is transferred from the waste liquid to the part of the cooling circuit 40. This causes the waste liquid to be cooled, further decreasing its temperature.

[0123] The upstream end of a drain passage 57 is connected to the tank 56. The drain passage 57 is mainly composed of piping. A valve 58 is provided in the drain passage 57, and when the valve 58 is opened, the waste liquid in the tank 56 is discharged to the outside through the drain passage 57. When the valve 58 is closed, the discharge of the waste liquid stops.

[0124] The waste liquid cooling unit 55 cools the waste liquid using the cooling circulation path 40, and therefore the temperature of the waste liquid can be lowered more quickly. Therefore, the waste liquid at a lower temperature can be discharged to the outside through the discharge path 57. For example, the control unit 90 may open the valve 58 when the temperature of the waste liquid in the tank 56 becomes equal to or lower than the allowable temperature.

[0125] 13 is a diagram showing another example of the configuration of the substrate processing system 100C. In the example of FIG. 13, the waste liquid cooling unit 55 cools the waste liquid in a branch path 47 branched from the cooling circulation path 40. The branch path 47 is mainly composed of a pipe, and its upstream end is connected to the cooling circulation path 40. As a specific example, the upstream end of the branch path 47 is connected to the cooling circulation path 40 downstream of all the upstream ends of the cooling liquid supply path 41 and the cooling liquid return path 42 and upstream of the heat exchanger 23. In addition, when the cooling liquid supply path 44 is connected to the cooling circulation path 40, the upstream end of the branch path 47 is connected to the cooling circulation path 40 downstream of all the cooling liquid supply path 41, the cooling liquid return path 42, and the cooling liquid supply path 44 and upstream of the heat exchanger 23.

[0126] 13, a portion of the branch path 47 is immersed in the waste liquid in the tank 56. In the example of Fig. 13, the portion of the branch path 47 has a U-shape and is immersed in the waste liquid in the tank 56. The other portion of the branch path 47 extends to the outside of the tank 56 through an upper opening of the tank 56.

[0127] A valve 471 is provided in the branch path 47. When the valve 471 is opened, a part of the cooling liquid flows from the cooling circulation path 40 through the branch path 47 and is discharged to the outside. Since low-temperature cooling liquid flows through the branch path 47, the drainage liquid in the tank 56 can be cooled.

[0128] In addition, when the cooling liquid is discharged through the branch path 47, the amount of the cooling liquid circulating through the cooling circulation path 40 decreases, so it is preferable to provide the cooling liquid refill unit 65 shown in Fig. 3. This makes it possible to suppress the decrease in the amount of circulation.

[0129] In addition, in the example of FIG. 11, both the heat retaining section 50 and the waste liquid cooling section 55 are provided, but the heat retaining section 50 does not necessarily have to be provided.

[0130] As described above, the substrate processing system 100, 100A to 100C has been described in detail, but the above description is merely an example in all respects, and the substrate processing system 100, 100A to 100C is not limited thereto. It is understood that countless modified examples not illustrated can be imagined without departing from the scope of this disclosure. The configurations described in the above embodiments and modified examples can be appropriately combined or omitted as long as they are not mutually contradictory. [Explanation of symbols]

[0131] 10, 10A to 10D Substrate processing equipment 100,100A~100C Substrate processing system 118 Exhaust channel 20 Heat pump equipment 22 Heat exchanger 30 Heating circuit 31 Processing liquid supply path 34 Heater 40 Cooling circuit 41,44 Coolant supply path 47 Fork in the road 48 Cooling section 50 Heat retention section 55 Drainage cooling section 61 Processing solution refill passage 70 Refrigerant concentration sensor 90 Control section W substrate

Claims

1. one or more substrate processing apparatuses for supplying a processing liquid to a substrate to process the substrate; A heat pump device for heating the treatment liquid; a heating circuit for returning the treated liquid from the heat pump device to the heat pump device; a processing liquid supply path branching from the heating circulation path and supplying the processing liquid to the substrate processing apparatus; a cooling circuit that returns the cooling liquid cooled by the heat pump device to the heat pump device; a cooling liquid supply path that branches off from the cooling circulation path and supplies the cooling liquid to the substrate processing apparatus; A substrate processing system comprising:

2. 2. The substrate processing system of claim 1, The substrate processing system further comprises a heater that heats the processing liquid flowing through the processing liquid supply path.

3. 3. The substrate processing system according to claim 2, The heater comprises a heat pump.

4. 4. The substrate processing system according to claim 2, further comprising: The substrate processing system further comprises a control unit that receives information about the substrate and causes the heater to start a heating operation.

5. 3. The substrate processing system according to claim 1, The heat pump device includes a heat exchanger connected to the heating circuit and made of a thermally conductive resin, The substrate processing system includes: The substrate processing system further comprises a coolant concentration sensor for measuring a coolant concentration in the heating circuit.

6. 3. The substrate processing system according to claim 1, a drainage path through which a waste liquid from the substrate processing apparatus flows; a heat retaining unit that retains the heat of the heating circulation path with the drainage liquid supplied from the discharge path; The substrate processing system further comprises:

7. 3. The substrate processing system according to claim 1, The substrate processing system further comprises a cooling unit, located upstream of the cooling liquid supply path and downstream of the heat pump device, for cooling the cooling liquid flowing through the cooling circulation path.

8. 8. The substrate processing system according to claim 7, a drainage path through which a waste liquid from the substrate processing apparatus flows; a drainage cooling unit that cools the drainage in the cooling circulation path or a branch path branched from the cooling circulation path; The substrate processing system further comprises:

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