Cleaning method

Abstract

To provide a cleaning method that can more reliably remove fine foreign matter adhering to the surface of semiconductor chips.SOLUTION: A cleaning method for cleaning a semiconductor chip 11 attached to a dicing film 30 includes a first step S201 for washing away foreign matter adhering to the surface of the semiconductor chip 11 by injecting hydrogen water, and after the first step S201, a second step S202 for washing the semiconductor chip and taking in foreign matter by touching a wipe material 80 containing the hydrogen water to the surface of the semiconductor chip 11 while spraying the hydrogen water onto the semiconductor chip 11.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a cleaning method for cleaning a semiconductor chip attached to a dicing film. [Background technology]

[0002] Semiconductor chips are manufactured by cutting 8-inch or 12-inch wafers to the specified size. During cutting, a dicing film is attached to the back side to prevent the cut semiconductor chips from falling apart, and the wafer is cut from the front side with a dicing saw or laser beam. During this process, the dicing film attached to the back side is slightly cut but not cut, still holding each semiconductor chip. Then, each cut semiconductor chip is picked up one by one from the dicing film and sent to the next process, such as flip chip bonding.

[0003] During dicing, foreign matter such as cutting chips from the semiconductor wafer and cutting chips from the dicing film adhere to the surface of the semiconductor chip, so the surface of the semiconductor chip and the surface of the cut wafer are cleaned during and after dicing. In recent years, direct bonding, in which one semiconductor chip is directly bonded onto another semiconductor chip, has become more common. When performing direct bonding, bonding quality may be reduced even if fine foreign matter measuring several microns to submicrons adheres to the surface.

[0004] In order to remove fine foreign matter of several microns to submicrons that can be a problem in direct bonding, Patent Document 1 proposes a semiconductor chip cleaning method in which gas-dissolved water is sprayed onto the surface of a semiconductor chip to remove fine inorganic foreign matter such as wafer cutting debris, and a wiping member attached to the tip of a wiping arm is used to remove fine organic foreign matter adhering to the surface of the semiconductor chip. The cleaning method described in Patent Document 1 makes it possible to completely remove fine foreign matter of several microns to submicrons that is adhering to the surface of a semiconductor chip. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2021 / 132133 Summary of the Invention [Problem to be solved by the invention]

[0006] Before being cut, the silicon atoms of a wafer are arranged three-dimensionally at precise positions. However, when a wafer is cut with a dicing saw or laser beam, mechanical and thermal energy causes defects on the cut surface of the wafer, such as destruction of the crystal structure, disturbance of the atomic arrangement, and formation of an amorphous layer, called a damaged layer.

[0007] The process-affected layer is much more fragile than the crystal structure inside the wafer, so even pressing a wiper against the surface of a semiconductor chip can generate minute foreign matter. If a wipe-cleaning process is performed to remove foreign matter, and new foreign matter is generated by the wipe-cleaning process, the surface of the semiconductor chip will be recontaminated. In order to improve bonding quality, there is a demand to clean the surface of the semiconductor chip as much as possible.

[0008] The present invention has been made in view of the above circumstances, and has an object to provide a cleaning method capable of more reliably removing minute foreign matter adhering to the surface of a semiconductor chip. [Means for solving the problem]

[0009] A cleaning method according to one embodiment of the present invention is a cleaning method for cleaning a semiconductor chip attached to a dicing film, and includes a first step of spraying hydrogen water to wash away foreign matter adhering to the surface of the semiconductor chip, and a second step, following the first step, of touching the surface of the semiconductor chip with a wipe material containing hydrogen water while spraying hydrogen water onto the semiconductor chip, thereby absorbing and washing the foreign matter. Effect of the Invention

[0010] According to the present invention, it is possible to provide a cleaning method capable of more reliably removing minute foreign matter adhering to the surface of a semiconductor chip. [Brief description of the drawings]

[0011] [Figure 1] 1 is a side view showing an example of a semiconductor chip cleaning apparatus used in a cleaning method according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a plan view showing an example of a wafer after dicing to be cleaned. [Diagram 3] FIG. 2 is a cross-sectional view showing an example of the internal structure of the wipe material. [Figure 4] 13 is a side view illustrating the operation of the Z drive unit controlled by the load adjuster. FIG. [Diagram 5] FIG. 4 is a plan view showing an example of the positional relationship between a first arm and a second arm. [Figure 6] 1 is a flowchart illustrating an example of a cleaning method according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] A preferred embodiment of the present invention will be described with reference to the accompanying drawings. In each drawing, the same reference numerals are used to denote the same or similar configurations. The cleaning method of one embodiment of the present invention is characterized in that the surface of the semiconductor chip 11 is washed by stroking the surface of the semiconductor chip 11 with the wipe material 80, rather than pressing the wipe material 80 against the surface of the semiconductor chip 11 with a strong force.

[0013] Stroking the surface of the semiconductor chip 11 with the wiping material 80 can also be said to mean touching the surface of the semiconductor chip 11 with a very weak force and then gently sliding the wiping material 80 along the surface of the semiconductor chip 11. The force with which the wiping material 80 touches the surface of the semiconductor chip 11 is equal to the restoring force of the compressible cushion material 81 in a state where it is compressed to a deformation amount of 10% or less of the maximum compressive deformation amount, for example. For example, it may be equal to or less than the weight of the wiping material 80 in a state where it contains liquid. Here, the maximum compressive deformation amount is defined as 100% of the maximum compressive deformation amount, which is the difference between the size of the wiping material 80 compressed to the point where it cannot be compressed any more in the vertical direction parallel to the rotation axis of the turntable 51 and the original size.

[0014] If the wipe material 80 is pressed strongly against the surface of the semiconductor chip 11 to wipe off the foreign matter as if scraping it off, the process-altered layer may be chipped. In the cleaning method of this embodiment, the wipe material 80 is brought into contact with the surface of the semiconductor chip 11 with a very weak force that does not damage the process-altered layer, and fine foreign matter is taken in and removed by the wipe material 80. In order to take in a wide range of foreign matter, the wipe material 80 is moved along the surface of the semiconductor chip 11 while maintaining a very weak force that does not damage the process-altered layer. Since the generation of fine foreign matter from the process-altered layer can be suppressed, fine foreign matter attached to the surface of the semiconductor chip 11 can be removed more cleanly than ever before. The following will be described in more detail with reference to the drawings. Note that taking in foreign matter includes a mode in which foreign matter is entangled by the fibers of the wipe material, and a mode in which foreign matter is adsorbed by an adsorption force such as van der Waals force or electrostatic force.

[0015] Fig. 1 is a side view showing the configuration of a semiconductor chip cleaning apparatus 100 according to an embodiment. As shown in Fig. 1, the semiconductor chip cleaning apparatus 100 includes a turntable 50 for rotating a wafer 10, a first arm 60 to which a gas-dissolved water nozzle 67 is attached, a second arm 70 for holding a wipe material 80, and the like.

[0016] The rotating table 50 is composed of a rotating platen 51, a rotating shaft 52, a rotation drive unit 53, etc. The rotating shaft 52 passes through a water receiver 55 arranged below the rotating platen 51, and the rotating platen 51 is attached to its upper end, while the rotation drive unit 53 is attached to its lower end. The rotating platen 51 is a circular flat plate, and the diced wafer 10 is placed on its upper surface.

[0017] Fig. 2 is a plan view showing an example of a diced wafer 10 to be cleaned. As shown in Fig. 2, the wafer 10 is a disk-shaped silicon crystal attached to the upper surface of a dicing film 30, which is a support material. The upper side of the outer periphery of the dicing film 30 is attached to a ring 20. The wafer 10 is divided into a plurality of semiconductor chips 11 by making lattice-shaped cuts 14 from above with a dicing saw. A process-affected layer is generated on the cut surface of the cuts 14.

[0018] 1, a plurality of semiconductor chips 11 obtained after dicing a wafer 10 are placed on the upper surface of a turntable 51 via a dicing film 30. The turntable 50 rotates the turntable 51 by a rotation drive unit 53. As a result, the turntable 50 rotates the semiconductor chips 11 placed on the upper surface of the turntable 51.

[0019] The first arm 60 further includes an arm body 61, an XY drive unit 62, etc., in addition to the gas-dissolved water nozzle 67 and the ultrasonic oscillator 64. The gas-dissolved water nozzle 67 is disposed above the turntable 50, and sprays the gas-dissolved water onto the surface of the semiconductor chip 11 placed on the upper surface of the turntable 50.

[0020] The base end side of the dissolved gas water nozzle 67 is connected to a dissolved gas water production device (not shown). An ultrasonic oscillator 64 that ultrasonically vibrates the dissolved gas water is attached to the outer circumferential surface near the bottom end of the dissolved gas water nozzle 67. The dissolved gas water nozzle 67 is movable in the XY directions along the surface of the semiconductor chip 11 by a first arm 60.

[0021] The gas-dissolved water is water in which a specific gas is dissolved. Here, the specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen, and the gas-dissolved water is water in which the specific gas is dissolved so that the total saturation degree of the specific gas under atmospheric pressure is 60% to 100%. Specifically, the gas-dissolved water may be hydrogen water in which hydrogen is dissolved in water. The gas-dissolved water may also be water to which an alkaline component has been added, for example, ammonia-added hydrogen water in which ammonia has been added to hydrogen water.

[0022] The second arm 70 includes an arm body 71, an XY drive unit 72, a Z drive unit 73, a rotation drive unit 74, a load sensor 76, a load adjustment unit 75, a cleaning liquid nozzle 77, a wiping material holder 78, etc. The arm body 71 is movable in the XY directions along the surface of the semiconductor chip 11 by the XY drive unit 72. A wiping material holder 78, to the lower end of which a wiping material 80 is attached, is attached to the underside of the tip of the arm body 71. The wiping material 80 captures and removes minute organic foreign matter adhering to the surface of the semiconductor chip 11.

[0023] FIG. 3 is a cross-sectional view showing an example of the internal structure of the wipe material 80. In the illustrated example, the wipe material 80 is configured with a multi-layer structure including a sheet material 82 capable of adsorbing foreign matter and a cushion material 81 capable of being compressed and deformed. The sheet material 82 is a fibrous material, for example, a nonwoven fabric made of entangled microfibers. The sheet material 82 is not limited to a fibrous material, and may be a thin film of a porous material. The sheet material 82 takes in foreign matter such as organic matter, and further peels it off from the surface of the semiconductor chip 11 to discard the foreign matter together with the cleaning liquid. The cushion material 81 is, for example, a sponge made of foamed resin material.

[0024] 1, a cleaning liquid nozzle 77 is attached to the tip of the arm body 71, the base end of which is connected to a cleaning liquid tank (not shown) and the bottom end of which sprays cleaning liquid onto the surface of the semiconductor chip 11. The cleaning liquid may be carbonated water in which carbon dioxide gas is dissolved in water, or ammonia-added hydrogen water in which an alkali is added to hydrogen water in which hydrogen gas is dissolved in water. Here, the cleaning liquid may have a resistivity of 0.05 to 1 MΩ·cm.

[0025] Attached to the upper side of the tip of the arm body 71 are a rotation drive unit 74 that rotates the wiping material 80, and a Z drive unit 73 that drives the wiping material holding unit 78 in the vertical direction to bring the wiping material 80 into contact with the surface of the semiconductor chip 11. The load sensor 76 measures the force of the sheet material 82 that has touched the surface of the semiconductor chip 11.

[0026] Fig. 4 is a side view illustrating the operation of Z drive unit 73 controlled by load adjustment unit 75. As shown in Fig. 4, if the surface of semiconductor chip 11 is uneven, the force with which sheet material 82 touches the surface of semiconductor chip 11 tends to change. Load adjustment unit 75 controls Z drive unit 73 so that the force measured by load sensor 76 approaches a set value regardless of the height of semiconductor chip 11.

[0027] The lower limit of the set value is zero, and the upper limit of the set value is equal to the restoring force of the compressible cushion material 81 in a state where it is compressed by 10% of the maximum compressive deformation amount. In other words, the load adjustment unit 75 controls the Z drive unit 73 so that the cushion material 81 is slightly compressed and the deformation amount becomes 10% or less of the maximum compressive deformation amount.

[0028] The Z drive unit 73 is an example of a drive mechanism that is controlled so that the force measured by the load sensor 76 becomes 10% or less of the maximum compressive deformation amount of the cushion material 81. The upper limit of the set value may be the weight of the cushion material 81 when it contains water. In this case, the Z drive unit 73 controlled by the load adjustment unit 75 hoists the wipe material 80 so that the measured force becomes equal to or less than the weight of the cushion material 81 when it contains liquid.

[0029] Fig. 5 is a plan view showing an example of the positional relationship between the first arm 60 and the second arm 70. As shown in Fig. 5, the second arm 70 swings about a rotation shaft 71X. The wiping material 80 held at the tip of the second arm 70 separated from the rotation shaft 71X moves back and forth between the center and the peripheral edge of the rotating plate 51.

[0030] Similarly, the first arm 60 swings around the rotation axis 61X. The dissolved-gas water nozzle 67 held at the tip of the first arm 60 spaced from the rotation axis 61X moves back and forth between the center and the periphery of the turntable 51. In the illustrated example, the first arm 60 is linked to the movement of the second arm 70, and the dissolved-gas water nozzle 67 moves to the center of the turntable 51 at the timing when the wiping material 80 moves to the center of the turntable 51. The dissolved-gas water nozzle 67 sprays liquid from the wiping material 80 within a predetermined range at the timing when the wiping material moves to the center of the turntable 51.

[0031] Fig. 6 is a flow chart for explaining an example of a cleaning method according to an embodiment of the present invention. As shown in step S101 of Fig. 6, the wafer 10 manufactured in the wafer manufacturing process is attached to the upper surface of the dicing film 30 as described above. The dicing film 30 is composed of a base material and an adhesive layer covering the upper surface of the base material, and the wafer 10 is attached to the upper surface of the adhesive layer.

[0032] The dicing process shown in step S102 of Fig. 6 is performed by a dicing device. The dicing device is a device that cuts a semiconductor wafer 10 attached to a dicing film 30 into semiconductor chips 11. The dicing device cuts the wafer 10 into a plurality of semiconductor chips 11 by making cuts 14 in the wafer 10. Larger particles among these foreign objects are removed in a post-dicing cleaning process shown in step S103 of Fig. 6.

[0033] At this time, the adhesive layer of the dicing film 30 is also cut together with the wafer 10. In the dicing process, inorganic foreign matter such as silicon chips and organic foreign matter such as chips of the adhesive layer 32 are generated when the notches 14 are made in the wafer 10. However, fine foreign matter on the order of several microns to submicrons is not removed, and the fine inorganic foreign matter remains attached to the surface of the semiconductor chip 11 and the side surface of the semiconductor chip 11 facing the notches 14. The fine organic foreign matter remains attached to the upper surface of the semiconductor chip 11.

[0034] Next, a gas-dissolved water washing step is performed as shown in step S201 of Fig. 6. The gas-dissolved water washing step is a step in which gas-dissolved water is sprayed from the gas-dissolved water nozzle 67 onto the surface of the semiconductor chip 11 to wash the surface of the semiconductor chip 11, and is an example of the first step. The gas-dissolved water is ultrasonically vibrated by the ultrasonic oscillator 64 while passing through the gas-dissolved water nozzle 67, and becomes water containing fine bubbles.

[0035] These fine bubbles foam on the surface of the semiconductor chip 11 and in the notches 14, and the impact of this foaming removes fine inorganic foreign matter on the surface of the semiconductor chip 11. When hydrogen water is used as the gas-dissolved water, it is possible to remove inorganic foreign matter without damaging the base material 31 of the dicing film 30, which is an organic material, because hydrogen water does not corrode organic matter. In addition, because hydrogen water inhibits oxidation of the surface, it is possible to finish the surface of the semiconductor chip 11 to a non-oxidized surface.

[0036] Furthermore, by using alkaline hydrogen water, the removed foreign matter can be prevented from reattaching to the surface of the semiconductor chip 11, so that the surface of the semiconductor chip 11 after cleaning can be made even cleaner. On the other hand, hydrogen water does not corrode organic matter, so it cannot remove fine organic foreign matter such as scraps of the adhesive layer adhering to the upper surface of the semiconductor chip 11, and even after the gas-dissolved water cleaning process is completed, fine organic foreign matter remains on the upper surface of the semiconductor chip 11, as shown in Fig. 6. Therefore, the process proceeds to step S202 in Fig. 6, and the rubbing cleaning process is performed.

[0037] The wiping wash process is a process in which cleaning liquid is continuously flowed from a cleaning liquid nozzle 77 onto the surface of the semiconductor chip 11 while the wipe material holding part 78 attached to the tip of the second arm 70 is rotated by the rotation drive unit 74, and the Z drive unit 73 controlled by the load adjustment unit 75 touches the wipe material 80 attached to the wipe material holding part 78 to the surface of the semiconductor chip 11 with very weak force to remove organic and inorganic foreign matter adhering to the surface of the semiconductor chip 11, and is an example of the second step.

[0038] In the stroking washing process, the wipe material holding part 78 may be rotated. The wipe material holding part 78 revolves around the rotation axis 52 due to the rotation of the turntable 50. The arm body 71 may be moved in the XY directions by the XY drive part 72. The wipe material holding part 78 may be revolved around the rotation axis 52 by the rotation drive part 74.

[0039] During the rubbing washing step, the force with which the wipe material 80 touches the surface of the semiconductor chip 11 may be adjusted by the load adjustment unit 75 .

[0040] The rubbing washing process can effectively remove not only inorganic foreign matter but also organic foreign matter from the surface of the semiconductor chip 11. Here, the cleaning liquid can be pure water, hydrogen water, alkaline hydrogen water, carbonated water, etc. When hydrogen water, alkaline hydrogen water, or carbonated water is used, the generation of static electricity can be suppressed.

[0041] Then, when the rubbing washing step is completed, organic fine foreign matter is removed from the surface of the semiconductor chip 11, and the surface of the semiconductor chip 11 becomes a clean surface. In the illustrated example, after the rubbing washing step, in step S203 shown in Fig. 6, the gas-dissolved water washing step is performed again. This makes it possible to more effectively remove inorganic fine foreign matter. Step S203 may be omitted.

[0042] Then, the semiconductor chip 11 having a clean surface is bonded to another semiconductor chip 11 or onto a substrate in a bonding device, as shown in step S301 of Fig. 6. A drying step may be performed after the rubbing washing step shown in step S202 of Fig. 3 or the gas-dissolved water washing step shown in step S203, to dry the semiconductor chip 11 before bonding. Note that the bonding device is, for example, a flip chip bonding device, but any device that bonds the semiconductor chip 11 to an object to be bonded, such as a die bonding device, may be used.

[0043] As described above, according to the cleaning method of the present invention, minute foreign matter adhering to the surface of the semiconductor chip 11 can be removed. The bonding quality during direct bonding can be improved. The wipe material 80 is brought into contact with the surface of the semiconductor chip 11 with a very weak force that does not damage the process-altered layer, and the minute foreign matter is taken up and removed by the wipe material 80. In order to take up a wide range of foreign matter, the wipe material 80 is moved along the surface of the semiconductor chip 11 while maintaining a very weak force that does not damage the process-altered layer. Since the generation of minute foreign matter from the process-altered layer can be suppressed, minute foreign matter adhering to the surface of the semiconductor chip 11 can be removed more cleanly than ever before.

[0044] The above-described embodiments are intended to facilitate understanding of the present invention, and are not intended to limit the present invention. The elements of the embodiments, as well as their arrangements, materials, conditions, shapes, sizes, etc., are not limited to those shown as examples and can be changed as appropriate. In addition, configurations shown in different embodiments can be partially substituted or combined with each other.

[0045] For example, the object to be cleaned is a semiconductor chip 11 attached on a dicing film 30. The present invention is not limited to the above, but can also be applied to a case where only good semiconductor chips 11 are picked out from a plurality of semiconductor chips 11 and attached onto a glass plate via an adhesive, and the glass plate to which the plurality of semiconductor chips 11 are attached is placed on the rotating table 50 to clean the surfaces of the semiconductor chips 11. In this case, the glass plate constitutes the support material. Also, instead of the glass plate, the semiconductor chips 11 may be attached onto a silicon wafer or substrate, and the silicon wafer or substrate may be placed on the rotating table 50 to clean the semiconductor chips 11. In that case, the silicon wafer or substrate constitutes the support material.

[0046] For example, in the cleaning steps described so far, a drying step may be performed after the final cleaning steps of the gas-dissolved water cleaning step and the rubbing cleaning step, respectively, to dry the surface of the semiconductor chip 11. For example, the semiconductor chip cleaning device 100 may be integrated with a bonding device, and the semiconductor chip 11 after cleaning may be supplied to the bonding device. A semiconductor chip 11 with a higher degree of cleanliness may be supplied to the bonding device. For example, the semiconductor chip cleaning device 100 of the embodiment may be integrated with a dicing device. For example, instead of the dicing cleaning device of the dicing device, the semiconductor chip cleaning device 100 may be integrated with the dicing device to remove inorganic and organic fine foreign matter adhering to the surface of the semiconductor chip 11 when the wafer 10 is cut from the surface of the semiconductor chip 11.

[0047] [Appendix 1-1] The cleaning method is a cleaning method for cleaning a semiconductor chip attached to a dicing film, and includes a first step of spraying liquid to wash away foreign matter adhering to the surface of the semiconductor chip, and a second step after the first step of spraying liquid onto the semiconductor chip and touching the surface of the semiconductor chip with a wipe material containing the liquid to wash it by stroking it, where the wipe material has a multi-layer structure including a sheet material that captures foreign matter and a cushion material that can be compressed and deformed, and in the second step, the sheet material is brought into contact with the surface of the semiconductor chip with a force that is 10% or less of the maximum compressive deformation amount of the cushion material.

[0048] [Appendix 1-2] In the above Supplementary Note 1-1, an arm is used to hold the wiping material, and the arm is equipped with a sensor and a driving mechanism, and in the second step, the sensor measures the force of the sheet material touching the surface of the semiconductor chip, and the driving mechanism is controlled so that the measured force is 10% or less of the maximum compressive deformation amount of the cushioning material.

[0049] [Appendix 1-3] In the above-mentioned Supplementary Note 1-1 or 1-2, the sheet material may be a nonwoven fabric in which microfibers are intertwined, and the cushioning material may be a sponge made by foaming a resin material.

[0050] [Appendix 1-4] In the above Supplementary Notes 1-1 to 1-3, in the wiping material, the sheet material may be disposed so as to encase the cushion material.

[0051] [Appendix 1-5] In the above Supplementary Notes 1-1 to 1-4, the liquid sprayed in the second step may be gas-dissolved water in which at least one of oxygen gas, nitrogen gas, and carbon dioxide gas is dissolved in water so that the sum of the saturation degrees of oxygen gas, nitrogen gas, and carbon dioxide gas under atmospheric pressure is 60% to 100%.

[0052] [Appendix 1-6] In the above-mentioned supplementary notes 1-1 to 1-5, in the second step, a nozzle may be used to spray the liquid onto the semiconductor chip, and the nozzle may be linked to the movement of the wiping material so as to spray the liquid within a predetermined range from the wiping material.

[0053] [Appendix 1-7] In the above Supplementary Notes 1-1 to 1-6, the method may further include a third step of spraying a liquid to wash the surface of the semiconductor chip after the second step.

[0054] [Appendix 2-1] The cleaning method is a cleaning method for cleaning a semiconductor chip attached to a dicing film, and includes a first step of spraying hydrogen water to wash away foreign matter adhering to the surface of the semiconductor chip, and a second step of, after the first step, touching the surface of the semiconductor chip with a wipe material containing hydrogen water while spraying hydrogen water onto the semiconductor chip, thereby capturing and washing the foreign matter.

[0055] [Appendix 2-2] In the above Appendix 2-1, an arm is used to hold the wiping material, the arm being equipped with a sensor and a driving mechanism, and in the second step, the sensor measures the force of the wiping material touching the surface of the semiconductor chip, and the driving mechanism may be controlled so that the measured force is 10% or less of the maximum compressive deformation amount of the wiping material.

[0056] [Appendix 2-3] In the above-mentioned supplementary note 2-1 or 2-2, in the second step, a nozzle may be used to spray the liquid onto the semiconductor chip, and the nozzle may be linked to the movement of the wiping material so as to spray the liquid within a predetermined range from the wiping material.

[0057] [Appendix 2-4] In the above Supplementary Notes 2-1 to 2-3, the hydrogen water injected in the second step may be ultrasonically vibrated.

[0058] [Appendix 2-5] In the above Supplementary Notes 2-1 to 2-4, the method may further include a third step of spraying hydrogen water to wash the surface of the semiconductor chip after the second step.

[0059] [Appendix 2-6] In the above Supplementary Notes 2-1 to 2-5, the hydrogen water injected in the second step may have a hydrogen gas saturation degree of 60% to 100% under atmospheric pressure. [Explanation of symbols]

[0060] 10...wafer, 11...semiconductor chip, 14...notch, 20...ring, 30...dicing film, 50...rotating table, 51...rotating disk, 52...rotating shaft, 53...rotation drive unit, 55...water tray, 60...first arm, 61...arm body, 62...XY drive unit, 64...ultrasonic oscillator, 67...gas-dissolved water nozzle, 70...second arm, 71...arm body, 72...XY drive unit, 73...Z drive unit, 74...rotation drive unit, 75...load adjustment unit, 76...load sensor, 77...cleaning liquid nozzle, 78...wipe material holding unit, 80...wipe material, 81...cushion material, 82...sheet material, 100...semiconductor chip cleaning device.

Claims

1. A cleaning method for cleaning a semiconductor chip attached to a dicing film, comprising the steps of: A first step of spraying hydrogen water to wash away foreign matter adhering to the surface of the semiconductor chip; and a second step of contacting a wiper material containing hydrogen water with the surface of the semiconductor chip while spraying hydrogen water onto the semiconductor chip after the first step, thereby taking in and washing the foreign matter. Cleaning method:

2. An arm is used to hold the wipe material, The arm includes a sensor and a drive mechanism. In the second step, The sensor measures the force of the wiper touching the surface of the semiconductor chip; The driving mechanism is controlled in the second step so that the measured force is equal to or less than 10% of the maximum compressive deformation amount of the wipe material. The cleaning method according to claim 1 .

3. In the second step, a nozzle is used to inject the liquid onto the semiconductor chip; The nozzle follows the movement of the wipe material so as to spray liquid within a predetermined range from the wipe material. The cleaning method according to claim 1 .

4. The hydrogen water injected in the second step is ultrasonically vibrated. The cleaning method according to claim 1 .

5. The method further includes a third step of spraying hydrogen water to rinse the surface of the semiconductor chip after the second step. The cleaning method according to claim 1 .

6. The hydrogen water injected in the second step has a hydrogen gas saturation degree of 60% to 100% under atmospheric pressure. The cleaning method according to any one of claims 1 to 5.

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