Semiconductor device testing device

Abstract

To address a problem in a connection change of wiring corresponding to test items taking a long time, the connection change causing a surge voltage and an inrush current, resulting in difficulty in accurately measuring changes in transistor characteristics.SOLUTION: A switch circuit board 201b is provided with a switch circuit 124a. A switch circuit board 201a is provided with a switch circuit 124b. A plurality of switch circuit boards 201b are disposed in parallel, and a conductive plate 204 has portions protruding from the switch circuit board 201b. A wire 211 is connected to a device terminal of a transistor 117 to be tested and the protruding portion of the conductive plate 204 of a selected switch circuit board 201b. The switch circuit 124b is disposed between output terminals of a power source circuit 121, and when turned on, shorts the output terminals. The switch circuit 124a is disposed between the output terminal of the power source circuit 121 and the device terminal of the transistor 117 to be tested, and when turned on, supplies a test current to the transistor 117.SELECTED DRAWING: Figure 14

Description

[Technical field]

[0001] The present invention relates to an electric element test apparatus for performing power cycle tests on semiconductor elements such as SiC, IGBT, MOS-FET, Gan-FET, bipolar transistors, posistors, and thermistors, and for testing and evaluating electronic and electric elements, as well as a test method and evaluation method for electronic and electric elements.

[0002] Provided is a semiconductor element testing device and a semiconductor element testing method that can efficiently reproduce stress similar to a failure mode in the environment in which a semiconductor element is used and can evaluate power semiconductor elements and the like with high reliability. [Background technology]

[0003] The lifespan of a power semiconductor element includes a lifespan caused by thermal fatigue caused by heat generation in the power semiconductor element itself, a lifespan caused by thermal fatigue caused by temperature changes in the external environment of the power semiconductor element, and a lifespan caused by voltage fatigue caused by the voltage applied to the gate insulating film of the power semiconductor element.

[0004] Generally, life tests for power semiconductor elements are performed by repeatedly turning current on and off to the semiconductor element. For example, tests are performed by setting voltages and currents to the emitter terminal (source terminal) and collector terminal (drain terminal) of the transistor of the semiconductor element, and applying periodic on-off signals (operation / non-operation signals) to the gate terminal.

[0005] The current applied to the semiconductor element during testing is large, at several hundred amperes, and requires low-resistance wiring to avoid heat generation and voltage drop. Because the test current is large, the terminal connections of the semiconductor element must be connected to low resistance. In addition, there are many types of tests, and the connection wiring must be changed quickly to match the type of test. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2014-138488 Summary of the Invention [Problem to be solved by the invention]

[0007] In a conventional semiconductor device test apparatus, a power semiconductor device (such as a transistor) is tested by turning on and off the transistor 117 and passing a constant current Id through the channel of the transistor.

[0008] There are a wide variety of test items that can be performed by a semiconductor device tester (power cycle tester), and it is necessary to change the connection to the transistor 117 in accordance with the test items.

[0009] The constant current Id is often several hundred amperes or more, and therefore it is necessary to use thick wires for the connection wiring 211 and power supply wiring 212 that pass the current. Also, a large current Id flows through the element terminal 226 of the semiconductor element. If there is contact resistance between the semiconductor element terminal and the connection wiring, the contact portion will generate heat, which may destroy the semiconductor element 117 or burn the connection portion. [Means for solving the problem]

[0010] The semiconductor element testing apparatus of the present invention has a connection structure 218 that connects with element terminal 226 of a semiconductor element to be tested. One end of connection structure 218 has connection parts (connection receiving part 225, connection pressure part 232, connection holding part 233) that come into contact with element terminal 226, and peat pipe 223 is attached to the surface of connection structure 218. Electrical connection is achieved by inserting element terminal 226 of the semiconductor element into the connection part of connection structure 218. The connection structure 218 is inserted into an opening 216 formed in the partition wall 217 to establish electrical connection with an element terminal 226 of the semiconductor element 117 to be tested.

[0011] The semiconductor device testing apparatus of the present invention separates a location (space) in the semiconductor device testing apparatus where the transistor 117 to be tested is arranged from a location of a circuit board that generates a test current for the transistor 117, generates a control signal, and acquires the test results. Partitions (partitions 217, 215, and 214) are provided for separation.

[0012] The connection between the transistor to be tested and the circuit board is made by inserting a fork plug 205 (connection plug 205) through an opening 216 provided in the partition wall 214 and bringing the connection plug 205 into contact with a conductor plate 204 on the circuit board. Effect of the Invention

[0013] Since there is contact resistance at the connection between element terminal 226 of transistor 117 under test and connection structure 218, the contact generates heat when a large current flows. In the present invention, since heat pipe 223 is disposed in connection structure 218, the generated heat can be efficiently conducted and released.

[0014] The element terminal 226 is sandwiched between the connection receiving portion 225 and the connection pressure portion 232 and is electrically connected well. Therefore, there is no or very little contact resistance at the connection portion of the element terminal 226, and the element terminal 226 generates almost no heat.

[0015] Since the element terminal 226 and the connection structure 218 are inserted from the opening 216 of the partition wall 217, they can be easily attached to and detached from the transistor 117 to be tested, and the connection to the transistor 117 to be tested can be changed in a short time.

[0016] A partition wall 214 is provided to separate a location (space) in the semiconductor device testing equipment where the transistor 117 is arranged from a location on a circuit board where a test current for the transistor 117 is generated, a control signal is generated, and test results are acquired. A connection plug 205 is inserted through an opening 216 provided in the partition wall 214, and the connection plug 205 is connected to a conductor plate 204 on the circuit board. There is no need to connect the connection wiring 211 for each test item, and no work space is required for changing the wiring connection, allowing the semiconductor device testing equipment to be made smaller. [Brief description of the drawings]

[0017] [Figure 1] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Diagram 2] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Diagram 3] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 4] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Diagram 5] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 6] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 7] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 8] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 9] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 10] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 11] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 12] 3A and 3B are configuration and explanatory diagrams of a connection terminal section of the electrical element testing apparatus of the present invention. [Figure 13] 1 is a configuration diagram and an explanatory diagram of an electrical element testing apparatus according to the present invention; [Figure 14] 1 is a configuration diagram and an explanatory diagram of an electrical element testing apparatus according to the present invention; [Figure 15] 1 is a configuration diagram and an explanatory diagram of an electrical element testing apparatus according to the present invention; [Figure 16] 1 is a configuration diagram and an explanatory diagram of an electrical element testing apparatus according to the present invention; [Figure 17] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 18] 3 is an explanatory diagram of a connection terminal portion and a connection structure of the electrical element testing apparatus of the present invention. FIG. [Figure 19] 3 is an explanatory diagram of a connection terminal portion and a connection structure of the electrical element testing apparatus of the present invention. FIG. [Figure 20] 3 is an explanatory diagram of a connection terminal portion and a connection structure of the electrical element testing apparatus of the present invention. FIG. [Figure 21] 3 is an explanatory diagram of a connection terminal portion and a connection structure of the electrical element testing apparatus of the present invention. FIG. [Figure 22] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 23] FIG. 2 is an explanatory diagram of a method for connecting an electric element test apparatus and an electric element according to the present invention. [Figure 24] FIG. 2 is an explanatory diagram of a method for connecting an electric element test apparatus and an electric element according to the present invention. [Diagram 25] FIG. 2 is an explanatory diagram of a test method for an electric element according to the present invention. [Figure 26] FIG. 2 is an explanatory diagram of a test method for an electric element according to the present invention. [Figure 27] FIG. 2 is an explanatory diagram of a test method for an electric element according to the present invention. [Figure 28] FIG. 2 is an explanatory diagram of a test method for an electric element according to the present invention. [Figure 29] FIG. 2 is an explanatory diagram of a test method for an electric element according to the present invention. [Diagram 30] FIG. 4 is a timing chart showing the method for testing an electric element according to the present invention. [Diagram 31] FIG. 4 is a timing chart showing the method for testing an electric element according to the present invention. [Diagram 32] FIG. 4 is a timing chart showing the method for testing an electric element according to the present invention. [Diagram 33] FIG. 4 is a timing chart showing the method for testing an electric element according to the present invention. [Diagram 34] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Diagram 35] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Diagram 36] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 37] FIG. 1 is a configuration diagram of an electrical element testing device according to the present invention. [Figure 38] 1A and 1B are a structural diagram and an equivalent circuit diagram of a semiconductor element. [Figure 39] 1A and 1B are a structural diagram and an equivalent circuit diagram of a semiconductor element. [Diagram 40] FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an electric element testing apparatus for a power cycle test or the like and an electric element testing method according to embodiments of the present invention will be described with reference to the accompanying drawings.

[0019] In the embodiments described in the specification, an IGBT is taken as an example of a power semiconductor element. The present invention is not limited to IGBTs, and can be applied to various power semiconductor elements such as SiC, MOSFETs, JFETs, and transistors. The present invention is also applicable not only to transistors, but also to two-terminal elements such as diodes.

[0020] Furthermore, the present invention is not limited to power semiconductor elements, but can also be applied to low-power semiconductor elements, semiconductor elements for signal control, and electrical elements such as resistor elements, capacitors, coils, and crystal oscillators.

[0021] In the drawings for explaining the embodiments of the invention, elements having the same functions are denoted by the same reference numerals, and descriptions thereof may be omitted. In addition, the embodiments of the present invention may be combined with each other. It goes without saying that the matters described in this specification and the drawings can be combined in part or in whole.

[0022] 13 is a configuration diagram of a power cycle test apparatus (semiconductor element test apparatus) of the present invention. The power cycle test apparatus includes, in a housing 210, a chiller (cooling / warming device) 136, a heating / cooling plate 134, and a circulating water pipe 135 that circulates water between the heating / cooling plate 134 and the chiller 136. A transistor 117 is mounted on the heating / cooling plate 134 as a semiconductor element to be tested.

[0023] The test conditions are set by changing the current Id, the gate voltage Vgs, and the voltage Vce so that the temperature information Tj and the temperature information Tc of the transistor 117 to be tested become predetermined values.

[0024] Tj is temperature information obtained mainly from a diode or the like that measures the temperature of the transistor 117, and Tc is temperature information obtained by acquiring the package temperature of the transistor 117 using a thermocouple or the like.

[0025] If the temperature information Tj or the temperature information Tc changes, it is determined that the transistor 117 has deteriorated or the characteristics have changed, and the test of the transistor 117 is stopped, or the control method is changed, or the test conditions are changed.

[0026] The characteristic change of the transistor 117 is judged or determined based on the change in the temperature information Tj, etc. Also, the characteristic change, reliability, and lifespan of the transistor 117 are evaluated based on the time it takes for the voltage Vce to reach a predetermined voltage, the time until the transistor 117 is broken, etc.

[0027] In the following description, the temperature information Tj is mainly taken as an example. If the temperature information Tj changes, it is determined that the transistor 117 has deteriorated or its characteristics have changed, and the test of the transistor 117 is stopped or the control method is changed.

[0028] In the following description, the current Id is applied to or passed through the transistor 117, but the present invention is not limited to this. It goes without saying that Id may be a current that changes over a predetermined period or time. Also, Id is not limited to a current, and may be a voltage.

[0029] In the semiconductor element testing method of the present invention, the characteristic change of the transistor 117, which is a semiconductor element, is judged or determined based on the change in temperature information Tj, etc. Also, the characteristic change, reliability, and lifespan of the transistor 117 are evaluated based on the time from when the voltage Vce becomes a predetermined voltage to when the transistor 117 is destroyed, etc.

[0030] In the semiconductor testing method of the present invention, the external conditions are changed in response to the deterioration or characteristic changes of transistor 117. For example, if transistor 117 generates heat, the water temperature is lowered. Lowering the water temperature reduces the current flowing through transistor 117, preventing the deterioration and characteristic changes of transistor 117 from progressing. As a result, the lifespan of transistor 117 is extended. Therefore, the lifespan and reliability characteristics of transistor 117 for specified set conditions can be quantitatively measured and determined.

[0031] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water of the chiller 136. The temperature of the transistor, etc. is periodically changed in response to the test conditions, and is cooled or heated to a constant value. Temperature information Tj of the test transistor is measured, and the chiller 136 is controlled to maintain the measured temperature information Tj at a constant value.

[0032] The chiller 136 is configured to keep the temperature of equipment, etc. constant by circulating water or heat transfer medium while managing its temperature. It is mainly used for cooling, but it can also heat as well as cool. It is configured to be able to control various temperatures. Feedback control is performed using temperature information Tc and temperature information Tj.

[0033] The control circuit 113 has a function of measuring or acquiring the temperature of the element terminal 226 from a thermocouple attached to the element terminal 226 or in its vicinity, and performing control so as to stop or interrupt the test or issue an alarm if the temperature is above a predetermined level.

[0034] The control rack 131 has a power supply device 132 that supplies a test current and a test voltage to the transistor 117, and a control circuit 133 that controls the transistor 117 or sets the test conditions. In Fig. 1(b), a thermocouple 316 is disposed at the element terminal 226. The thermocouple 316 may be disposed at a test component such as the transistor 117.

[0035] Temperature information Tj of the transistor 117 and the like are input to the control circuit 133, and the control circuit 133 controls the chiller 136 based on the temperature information Tj, etc. Alternatively, the control circuit 133 controls the chiller 136 so that the temperature information Tj, etc., becomes a predetermined value.

[0036] Although circulating water is described in this specification, it is not limited to water. Ethylene glycol, glycerin, freon, etc. may also be used, and forced air cooling may also be used. Chiller 136 controls the liquid in circulating water pipe 135 to a temperature range of, for example, -1°C to +100°C, and supplies it to heating / cooling plate 134 of the test unit. Heating / cooling plate 134 has a sufficiently large heat capacity.

[0037] In the above embodiment, the heating / cooling plate 134 is used, but the heating plate and the cooling plate may be separate bodies, and heating / cooling may be performed using a heat source / cold source other than the heating / cooling plate.

[0038] Fig. 14 is a configuration diagram of a semiconductor device testing apparatus (for example, a power cycle testing apparatus for testing a power transistor) in a first embodiment of the present invention, and Fig. 25 is an equivalent circuit diagram or explanatory diagram of the semiconductor device testing apparatus.

[0039] The power supply circuit 121 outputs a large constant current Id for testing the transistor 117. The power supply circuit 121 supplies power (current, voltage) in synchronization with a control signal from the control circuit board 111 (controller 111), and drives the load at a set constant current or constant voltage using the supplied power. The power supply circuit 121 can also set a maximum voltage value to be output.

[0040] The switch circuit 124a (SWa) turns on (supply) and off (cut) the supply of the constant current output by the power supply circuit 121. The switch circuit 124a is set or controlled to be on (output constant current) or off (cut off constant current) based on a signal from the control circuit board (controller) 111. Usually, the switch circuit 124a is turned on before the start of testing, and is constantly maintained in the on state during testing of the semiconductor elements.

[0041] 14 shows one power supply circuit 121. However, the number of power supply circuits 121 is not limited to one. For example, the semiconductor device testing apparatus of the present invention may have two or more power supply circuits 121. The more the number of power supply circuits 121 increases, the more diverse the current waveforms Id or voltage waveforms that can be generated. It is easy to superimpose multiple currents. In the embodiment of the present invention, the power supply circuit 121 will be described, but the power supply circuit 121 is not limited to one that outputs a constant current.

[0042] For example, a power supply circuit 121 capable of setting a maximum voltage is used. An example is a circuit that functions to output a predetermined constant current at a set maximum voltage under certain conditions. Another example is a circuit that is configured to set the output terminal voltage to a predetermined maximum voltage when a constant current is output. It goes without saying that in the semiconductor device testing apparatus of the present invention, the power supply circuit 121 need not be a device that outputs only a constant current, but may be a power supply device that can output both voltage and current.

[0043] 14 and other embodiments are described assuming that the current Id is generated by the power supply circuit 121, but the current Id can also be realized by adjusting the applied voltage in accordance with the on-resistance state of the transistor 117. Therefore, it goes without saying that the semiconductor device testing apparatus of the present invention is not limited to the power supply circuit 121 that outputs a current, and may be configured as a power supply device that outputs a voltage.

[0044] The current Id can also be realized by controlling the voltage value of the gate voltage of the transistor 117. In this specification, a description will be given of applying a predetermined current to the transistor 117 by controlling the power supply circuit 121. However, this is not limited to this, and it goes without saying that the voltage of the gate terminal g of the transistor 117 and the voltage of the collector terminal c of the transistor 117 may be adjusted or controlled.

[0045] For ease of explanation, in the embodiment of the first semiconductor element testing method of the present invention, it is assumed that the constant current Id is generated by the power supply circuit 121. The current Id flowing through the transistor 117 is supplied by operating the power supply circuit 121. The power supply circuit 121 is controlled to be turned on / off by a signal from a control circuit board (controller) 111. The operation timing of the device control circuit board 209 is controlled by the control circuit board (controller) 111.

[0046] An emitter terminal e of the transistor 117 is grounded (connected to a ground line). A gate terminal g of the transistor 117 is connected to the gate driver circuit 113.

[0047] A gate driver circuit 113, a variable resistance circuit 125, a constant current circuit 118, and an operational amplifier (buffer circuit) 116 are arranged or formed in the sample connection circuit 203. The sample connection circuit 203 is arranged separately from the device control circuit board 209 so that it can be arranged in the vicinity of the transistor 117 to be tested.

[0048] It is preferable to provide one sample connection circuit 203 for each transistor 117 to be tested, but this is not limited thereto, and one sample connection circuit 203 including multiple signal circuits may be provided for multiple transistors 117.

[0049] The sample connection circuit 203 is connected to the transistor 117 via a connection pin 206 of the connector 202. The gate driver circuit 113 and the gate terminal g of the transistor 117 are arranged so as to have a short distance of 30 mm or less between them. If the distance between the gate driver circuit 113 and the gate terminal g of the transistor 117 is long, noise or the like is superimposed on the gate terminal g, causing the transistor 117 to malfunction, directly leading to the destruction of the transistor 117.

[0050] 15, the device control circuit board 209 is placed in room B of the housing 210 of the semiconductor device testing equipment. The housing 210 is a frame or device body in which the power supply device 132, the drive circuit, and the heating / cooling plate 134 of the semiconductor testing equipment are incorporated. The sample connection circuit 203 is placed in room C1 of the housing 210 of the semiconductor device testing equipment in order to be located close to the transistor 117 to be tested. The sample connection circuit 203 is connected to a connector 208 placed on the side of the housing 210. Wiring connected to a connection pin 206 of the connector 208 is connected to the device control circuit board 209 in room B.

[0051] The housing 210 is not limited to a box-like one, but may be, for example, a room. The power supply circuit 121 is arranged in the room. The partition walls 214, 215, and 217 may be walls of the room.

[0052] As shown in FIG. 15, a semiconductor element 117 (transistor, etc.) to be tested is placed in the C1 chamber. The transistor 117, etc. are placed and fixed in close contact with the heating and cooling plate 134. If necessary, as shown in FIG. 1(a), the transistor 117, etc. are sandwiched and fixed between the heating and cooling plate 134a and the heating and cooling plate 134b. As described above, in the present invention, the housing 210 is divided into a plurality of regions such as the C1 chamber. The C1 chamber is configured to be injected with dry air (dry gas, gas with a low dew point temperature). Air pressure is applied to the C1 chamber, and the air injected into the C1 chamber is discharged through the opening 216, etc.

[0053] 15 and 17, the connection structure 218 is inserted from the C2 chamber through the opening 216 of the partition wall 217. By inserting the connection structure 218, an electrical connection is established between the element terminal 226 of the transistor 117 and the connection structure 218, and a constant current (test current) Id can be applied to the transistor 117. When the connection structure 218 is inserted from the opening 216, the element terminal 226 can be easily clamped between the connection receiving portion 225 and the connection holding portion 233 because the C portion has been cut as shown in FIG.

[0054] The partition wall 217 has a function of electrostatic shielding and holding the connection structure 218. It goes without saying that the partition wall 217 can be omitted if a separate electrostatic shielding functional component, a fixing or holding stand for the connection structure 218 is disposed or configured. Furthermore, it goes without saying that when the partition wall 217 is not provided, the element terminal 226 of the transistor 117 may be positioned and fixed to the connection structure 218 . The connection structure 218 is made of copper or a copper alloy and has a silver or nickel plated surface.

[0055] Partition 217 functions as an electromagnetic shield, an electrostatic shield, and a holder for connection structure 218. It goes without saying that partition 217 can be omitted if a fixing or holding stand for an electromagnetic shielding function component, an electrostatic shielding function component, or connection structure 218 is separately arranged or configured. The partitions 214, 215, and 217 may be configured or formed of a material having an electromagnetic shield and / or an electrostatic shield. Furthermore, it goes without saying that when the partition wall 217 is not provided, the element terminal 226 of the transistor 117 may be positioned and fixed to the connection structure 218 .

[0056] The partitions (partitions 214, 215, 217) have the function of separating each chamber (chamber C1, chamber C2, chamber A, chamber B) and the function of preventing outside air from flowing in. In particular, dry air is flowed into chamber C1 because condensation may occur in chamber C1 during testing at low temperatures. The dry air that flows into chamber C1 is exhausted to the other chambers through opening 216. However, if the opening of opening 216 is large, a large amount of dry air is required. Therefore, it is preferable that opening 216 is sized so that fork plug 205 and connection structure 218, which serve as connecting members, can be inserted just right.

[0057] A fixing screw 221 is attached to the other end of the connection structure 218, and the connection wiring 211 is connected to the connection structure 218. A fork plug 205 is attached to the other end of the connection wiring 211 as a connection member.

[0058] The fixing screw 221 is not limited to a screw, and may be any type that can electrically connect the connection wiring 211 to the connection structure 218. For example, it goes without saying that the fixing screw 221 may have a configuration or structure that allows the connection wiring 211 to be pressure-inserted. It also goes without saying that the fixing screw 221 may be one that can make contact by pressing with a spring (not shown).

[0059] The sample connection circuit 203 is connected to a device control circuit board 209 by a connection pin 206 of a connector 208. The sample connection circuits 203 are individually arranged corresponding to each transistor 117 to be tested, and the sample connection circuits 203 are configured so as to be easily removable. The connectors 208 and 213 are not limited to connectors, and may be any connectors that can electrically connect and disconnect wiring.

[0060] 18 is an explanatory diagram of a connection structure 218 in a semiconductor device testing apparatus of the present invention. A heat pipe 223 is in close contact with a recess 234 on the surface of the connection structure 218. Thermally conductive grease or a heat dissipating silicone oil compound may be applied between the surface of the connection structure 218 and the heat pipe.

[0061] Connection structure 218 of the present invention is formed with recess 234, and heat pipe 223 is formed to be fitted into recess 234. A material having a linear expansion coefficient of heat pipe metal fitting 231 of connection structure 218 is used which is smaller than that of heat pipe 223.

[0062] The connection structure 218 is heated during testing, thus heating the heat pipe 223 and the heat pipe fitting 231. The heating causes the heat pipe 223 and the heat pipe fitting 231 to expand.

[0063] In the present invention, a material having a linear expansion coefficient smaller than that of the heat pipe 223 is used for the heat pipe fitting 231 of the connection structure 218, or a material having a linear expansion coefficient larger than that of the heat pipe fitting 231 is used for the heat pipe 223 of the connection structure 218. The material of the heat pipe 223 expands more in the recess 234, so that the heat pipe 223 is more firmly fitted into the recess 234. The heat pipe 223 does not come off the heat pipe fitting 231. The more the heat pipe 223 heats up, the more the heat pipe 223 expands, and the closer the heat pipe 223 is to the heat pipe fitting 231, improving heat dissipation.

[0064] Examples of materials for the heat pipe metal fitting 231 include copper (linear expansion coefficient 16.8), brass (linear expansion coefficient 19), iron (linear expansion coefficient 12.1), and stainless steel (SUS304) (linear expansion coefficient 17.3). Examples of materials for the heat pipe 223 include materials with a linear expansion coefficient larger than that of the heat pipe metal fitting 231, such as aluminum (linear expansion coefficient 23), tin (linear expansion coefficient 26.9), and lead (linear expansion coefficient 29.1). Among these, it is preferable to use copper (linear expansion coefficient 16.8) as the material for the heat pipe metal fitting 231 and aluminum (linear expansion coefficient 23) as the material for the heat pipe 223. Alternatively, an alloy obtained by mixing aluminum with a second metal such as molybdenum may be used.

[0065] The rate at which length changes in response to an increase in temperature is called the linear expansion coefficient. Similarly, the rate at which volume changes is called the volumetric expansion coefficient. If the linear expansion coefficient is α and the volumetric expansion coefficient is β, then there is a relationship: β ≒ 3α. The thermal expansion coefficient indicates the rate at which an object's length and volume expand (thermal expansion) due to an increase in temperature, per unit of temperature. It is also called the thermal expansion coefficient.

[0066] Therefore, in the present invention, it is preferable to use a material whose linear expansion coefficient for heat pipe fitting 231 of connection structure 218 is smaller than that of heat pipe 223, or to use a material whose linear expansion coefficient for heat pipe 223 of connection structure 218 is larger than that of heat pipe fitting 231. It goes without saying that the linear expansion coefficient may be replaced with the thermal expansion coefficient or the volumetric expansion coefficient.

[0067] The recess 234 is formed in the heat pipe fitting 231. The heat pipe 223 is disposed so as to fit into the recess 234. By disposing the heat pipe 223 in the recess, the risk of the heat pipe 223 being damaged is reduced.

[0068] The heat pipe metal fitting 231 is made of a metal that has good electrical and thermal conductivity. Examples of the metal include copper and silver. Other non-metallic materials such as carbon can also be used.

[0069] It is preferable to use thermally conductive grease that contains boron nitride (boron). It is preferable to use heat dissipating silicone oil compound that uses silicone oil as a base oil and mixes powder with good thermal conductivity such as alumina. The heat pipe 223 is a sealed container in which a small amount of liquid (working liquid) is vacuum sealed, and which has a capillary structure (wick) on the inner wall.

[0070] When part of the heat pipe is heated, the working fluid evaporates in the heated area (absorbing the latent heat of evaporation), and the vapor moves to the low-temperature area at high speed (sonic speed). The vapor condenses in the low-temperature area (releasing the latent heat of evaporation), and the condensed working fluid flows back to the heated area due to the capillary action of the wick. The above phase changes are repeated continuously without any external force, and heat is transferred instantly, allowing the heat generated at the terminals of the semiconductor element to be transferred quickly and efficiently.

[0071] The heat pipe 223 is composed of an array of multiple containers (copper pipes). The inside of the container is in a highly decompressed state, and contains a wick (capillary structure) and an appropriate amount of working fluid (pure water, etc.). As the working fluid, in addition to pure water, methanol (methyl alcohol), acetone, sodium, mercury, fluorocarbon refrigerants, and ammonia may be used. Wick materials include aluminum, copper, stainless steel, sintered alloy, wire mesh, foam metal, and ceramics.

[0072] The connection structure 218 is not limited to metal. It goes without saying that it may be made of a nonmetallic material such as ceramic, graphite, or a composite material of graphite and copper or aluminum. In the case where a current is directly applied to the connection structure 218, the connection structure 218 is made of a metal material such as copper. The surface of the connection structure 218 is preferably plated with silver, nickel, or the like. Figure 18 is an explanatory diagram of the configuration of the connection structure 218. Figure 18(a) is a diagram that typically illustrates the back surface, and Figure 18(b) is a diagram that typically illustrates the side surface.

[0073] 18, the connection structure 218 mainly comprises a heat pipe fitting 231, a connection receiving portion 225, a connection pressure portion 232, and a connection holding portion 233. An element terminal 226 of a semiconductor element is inserted between the connection receiving portion 225 and the connection holding portion 233.

[0074] A spring 236 is inserted or placed in a spring hole 239 of the connection receiving portion 225 and the connection pressure portion 232. A positioning screw 237 is inserted or placed in a positioning screw hole 240 in the center of the connection receiving portion 225, and the connection receiving portion 225 and the connection pressure portion 232 are positioned.

[0075] The spring 236 is a pressure generating means, a sliding means, or a positioning means. An example of the spring is a coil spring. Other examples include a leaf spring, a spiral spring, a tone spring, and a disc spring. In this specification, for ease of explanation, a coil spring is used as an example of the spring. However, the spring is not limited to a coil spring. The spring 236 is preferably made or constructed from a metal material having good electrical conductivity, but may also be made from a heat-resistant rubber, plastic, or ceramic material.

[0076] A coil spring 236 is disposed between the connection receiving portion 225 and the connection pressure portion 232. The connection pressure portion 232 is connected by one or more fixing screws 224b. By fastening or attaching the fixing screws 224b, pressure (pressure) is applied between the connection receiving portion 225 and the connection holding portion 233. The element terminal 226 is sandwiched between the connection receiving portion 225 and the connection holding portion 233, and the element terminal 226 is held between the connection receiving portion 225 and the connection holding portion 233 with a predetermined pressure (predetermined pressing force) due to the pressure of the spring 236.

[0077] 18, the heat pipe fitting 231 and the connection holder 233 are shown as separate members joined together by fixing screws 224a. It goes without saying that the heat pipe fitting 231 and the connection holder 233 may be integrated into one member. FIG. 1 is a configuration and explanatory diagram of a connection portion between an element terminal 226 of a transistor 117 and the like in an electric element testing apparatus of the present invention.

[0078] 1(a), the connection holding part 233 is fixed to the heat pipe metal fitting 231 with a fixing screw 224a. The connection pressure part 232 is fixed to the connection holding part 233 with a fixing screw 224b. The element terminal 226 of the semiconductor element is fixed by tightening or positioning the fixing screw 224b. The connection wiring 211 is fixed to the left end of the heat pipe metal fitting 231 with a fixing screw 221.

[0079] The pressure (pressure) can be easily adjusted by changing the spring 236. Also, the pressure (pressure) can be adjusted or set by the degree of tightening of the fixing screw 224b. The heat pipe metal fitting 231 and the connection holder 233 are fixed with one or more fixing screws 224a.

[0080] 1, 4, etc., the portion (edge) into which the element terminal 226 is inserted is cut at 45°. By cutting the edge, when the connection structure 218 is inserted from the opening 216 of the partition wall 217 and connected to the element terminal 226, it becomes easier to insert the connection structure 218 into the element terminal 226. The edge cut may be in another shape, such as an arc shape.

[0081] The connection receiving portion 225 is disposed between the connection pressure portion 232 and the connection holding portion 233. Platinum, gold, silver, tungsten, copper, nickel, or an alloy of a combination thereof is used as a constituent material or at least a surface material of the connection receiving portion 225. It is also preferable to use a silver-oxide contact material (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0082] Similarly, platinum, gold, silver, tungsten, copper, nickel, or an alloy of a combination thereof is used as the surface constituent material of the surface of the connection holding part 233 that contacts the element terminal 226. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0083] The connection holding part 233 is fixed to the heat pipe metal fitting 231 with a fixing screw 224a. The connection pressure part 232 is fixed to the connection holding part 233 with a fixing screw 224b. The element terminal 226 of the semiconductor element is fixed by tightening or positioning the fixing screw 224b. The connection wiring 211 is fixed to the left end of the heat pipe metal fitting 231 with a fixing screw 221.

[0084] The connection holder 233 and the heat pipe fitting 231 may be integrated into one component without using the fixing screw 224a. By configuring them as one component, the heat generated at the element terminal 226 is efficiently transferred from the connection holder 233 to the heat pipe fitting 231, and the transferred heat is dissipated by the heat pipe 223.

[0085] 1(b), by integrating the heat pipe fitting 231 and the connection holder 233, heat from the connection holder 233 is easily transferred to the heat pipe fitting 231, improving heat dissipation at the element terminal 226. In addition, by arranging the heat pipe 223 also in the vicinity of the element terminal 226, heat generated by the element terminal 226 is efficiently dissipated as shown in FIG. It goes without saying that the above can also be applied to other embodiments of the present invention such as those shown in FIGS. 1(a), 4, 6, 7, 10, 11, and 12.

[0086] Fig. 3 is a plan view of members constituting the connection portion which electrically and thermally connects with element terminal 226. Fig. 7, Fig. 2, etc. show one fixing screw 224b for fixing connection holder 233 and connection pressure portion 232, but Fig. 3, Fig. 4, Fig. 5, etc. show two fixing screws 224b. Fig. 7, Fig. 2, etc. show one fixing screw 224a for fixing connection holder 233 and heat pipe metal fitting 231, but Fig. 3, Fig. 4, Fig. 5, etc. show two fixing screws 224a.

[0087] As described above, the number of fixing screws 224 used is appropriately selected and designed according to the fixing state. Although the fixing screws 224 are used in this specification, the present invention is not limited to fixing screws, and other means may be used for connection. Examples include welding by electricity or arc discharge, spot welding, resistance welding, laser welding, TIG welding, ultrasonic welding, electron beam welding, soldering, crimping, etc. 3, 4 and 5 are explanatory diagrams for explaining the assembled state of the connection holding portion 233, the connection receiving portion 225 and the connection pressure portion 232. FIG.

[0088] Fig. 3(a) is a plan view of the connection holding part 233. In Fig. 3(a), fixing screws 224b are inserted into the screw holes 238b1 and 238b2 to fix the connection holding part 233 and the connection pressure part 232. Furthermore, fixing screws 224a are inserted into the screw holes 238a1 and 238a2 to fix the connection holding part 233 and the heat pipe fitting 231.

[0089] 3(a), fixing screws 224b are inserted into screw holes 238b1 and 238b2 to fix the connection holder 233 and the connection pressure part 232. Furthermore, fixing screws 224a are inserted into screw holes 238a1 and 238a2 to fix the connection holder 233 and the heat pipe fitting 231.

[0090] Fig. 3(b) is a plan view of the connection receiving portion 225. In Fig. 3(b), a spring hole 239 is formed at each of the four corners. A positioning screw hole 240 is formed in the center. The distance between the connection receiving portion 225 and the connection pressure portion 232 is adjusted or set by a position fixing screw 237 in the positioning screw hole 240. By adjusting the distance between the connection receiving portion 225 and the connection pressure portion 232, the pressure (pressure) of the spring 236 is set to a predetermined value.

[0091] A spring hole 239 is formed at each of the four corners, and a spring 236 is sandwiched between the spring hole 239 of the connection receiving portion 225 and the spring hole 239 of the connection pressure portion 232. Since the springs 236 are sandwiched at the four corners, the pressure at the four corners of the connection receiving portion 225 is adjusted evenly by the positioning screw holes 240.

[0092] Furthermore, the positions of the connection pressure portion 232 and the connection receiving portion 225 are fixed by the positioning screw hole 240. Therefore, the element terminal 226 sandwiched between the connection receiving portion 225 and the connection holding portion 233 does not move.

[0093] Fig. 3(c) is a plan view of the connection pressure part 232. In Fig. 3(c), spring holes 239 are formed at each of the four corners. A positioning screw hole 240 is formed in the center. The distance between the connection receiving part 225 and the connection pressure part 232 is adjusted or set by a position fixing screw 237 in the positioning screw hole 240. By adjusting the distance between the connection receiving part 225 and the connection pressure part 232, the pressure of the spring 236 is set to a predetermined value.

[0094] A spring hole 239 is formed at each of the four corners, and a spring 236 is sandwiched between spring hole 239 of connection receiver 225 and spring hole 239 of connection pressure part 232. Spring 236 is fitted and inserted into spring hole 239. Since spring 236 is sandwiched at the four corners, positioning screw hole 240 allows uniform pressure adjustment at the four corners of connection receiver 225. Furthermore, positioning screw hole 240 fixes the positions of connection pressure part 232 and connection receiver 225.

[0095] Fig. 5 is an explanatory diagram for explaining the assembled state of the connection holding portion 233, the connection receiving portion 225, and the connection pressure portion 232. Fig. 4 is a perspective view of the assembled state of the connection holding portion 233, the connection receiving portion 225, and the connection pressure portion 232.

[0096] The connection holding portion 233 connects and fixes the heat pipe 223 and the heat pipe metal fitting 231 with screws 224a (not shown) inserted into the screw holes 238a1 and 238a2. The heat pipe 223 and the heat pipe metal fitting 231 are connected and fixed in close contact with each other so as to have good thermal conductivity and electrical conductivity. The connection holding portion 233 is also connected and fixed to the connection pressure portion 232 with screws 224b (not shown) inserted into the screw holes 238b1 and 238b2.

[0097] 4 shows the state in which the connection holding portion 233, the connection receiving portion 225, and the connection pressure portion 232 are assembled. However, illustration of the screw hole 238 and the position fixing screw 237 is omitted. The configuration in FIG. 4 is connected to and fixed in place by the heat pipe metal fitting 231.

[0098] Fixing screws 224b are inserted into screw holes 238b1 and 238b2 to fix the connection holder 233 and the connection pressure portion 232. Fixing screws 224a are inserted into screw holes 238a1 and 238a2 to fix the connection holder 233 and the heat pipe fitting 231.

[0099] The connection receiving portion 225 has convex portions 251 formed on both ends, and the connection pressure portion 232 has groove portions 252 formed on both ends. The convex portions 251 of the connection receiving portion 225 are fitted into the groove portions 252 of the connection pressure portion 232. The convex portions 251 of the connection receiving portion 225 and the groove portions 252 of the connection pressure portion 232 are configured to be in electrical contact with each other.

[0100] 4 and 5, the connection holding part 233 connects and fixes the heat pipe 223 and the heat pipe fitting 231 with screws 224a inserted into the screw holes 238a1 and 238a2. The heat pipe 223 and the heat pipe fitting 231 are connected and fixed in close contact with each other so as to have good thermal and electrical conductivity. The connection holding part 233 is also connected and fixed to the connection pressure part 232 with screws 224b inserted into the screw holes 238b1 and 238b2.

[0101] The connection receiving portion 225 has convex portions 251 formed on both ends, and the connection pressure portion 232 has groove portions 252 formed on both ends. The convex portions 251 of the connection receiving portion 225 are fitted into the groove portions 252 of the connection pressure portion 232. The convex portions 251 of the connection receiving portion 225 and the groove portions 252 of the connection pressure portion 232 are configured to be in electrical contact with each other.

[0102] In order to improve the contact between the element terminal 226 and the connection receiving portion 225, it is preferable to form triangular or other irregularities on the surface of the connection receiving portion 225 as shown in Figures 2(b) and 2(c). The protrusions come into strong contact with the element terminal 226, resulting in a good electrical connection.

[0103] As shown in Fig. 2(a), the element terminal 226 is sandwiched between the connection receiving portion 225 and the connection holding portion 233. As shown in Fig. 2(b), triangular projections and recesses are formed on the surface of the connection receiving portion 225 in parallel with the insertion direction of the element terminal 226. A stronger pressure is applied to the triangular peaks and the element terminal 226 shown in Fig. 2(c), realizing good contact. xFurthermore, the shape is not limited to a triangular shape, and may be an embossed shape or a protruding shape.

[0104] 2(c) may be formed or processed on the surface of the connection holding portion 233 that contacts the element terminal 226. Also, it is needless to say that the shape is not limited to a triangular shape, and may be other shapes such as an arc shape, a protrusion shape, an embossed shape, etc. In the configuration of FIG. 1, the element terminal 226 is sandwiched between a flat surface of a connection pressure portion 232 and a flat surface of a connection holding portion 233 .

[0105] 6 shows a configuration in which the element terminal 226 is sandwiched between a pressing tool mounting plate 313 and a connection holder 233. Pressing tools 311a and 311b are attached to the pressing tool mounting plate 313. The pressing tool 311 is exemplified by a leaf spring made of metal. Note that the pressing tool 311 may be formed of a non-conductive material such as a silicon resin material. The pressing tool 311 is fitted into the pressing tool mounting plate 313. As shown in FIG. 6, the lower surface of the element terminal 226 is in surface contact with the connection holder 233 , and the upper surface of the element terminal 226 is clamped by a pressing tool 311 .

[0106] The element terminal 226 is clamped between the flat surfaces of the pressing tool 311 and the connection holder 233. When the pressing tool 311 is pressed, the element terminal 226 and the connection holder 233 are electrically connected to each other.

[0107] 1(a), the spring (pressure fitting) 236 was inserted into the spring hole 239 of the connection receiving portion 225. If the spring (pressure fitting) 236, the connection receiving portion 225, and the connection pressure portion 232 are made of conductive materials, electricity may flow from the element terminal 226 → the connection receiving portion 225 → the spring (pressure fitting) 236 → the connection pressure portion 232. In this case, if the resistance value of the spring (pressure fitting) 236 is large, a current may flow through the spring (pressure fitting) 236, causing the spring, etc. to heat up and burn out.

[0108] By configuring any one of the connection receiving portion 225, the spring (pressure fitting) 236, and the connection pressure portion 232 from a non-conductive material, the above-mentioned current path is eliminated, and the spring, etc., is also prevented from burning. A configuration in which heat is transferred to the connection holding portion 233 and then to the heat pipe 223 is preferable. As shown in FIG. 1(b) and other figures, a configuration in which the heat pipe fitting 231 and the connection holding portion 233 are configured as an integral unit, and the heat generated by the element terminal 226 is transferred to the heat pipe fitting 231 and then to the heat pipe 223 is preferable.

[0109] 6, when the pressing tool 311, the spring (pressure fitting) 236, the connection receiving portion 225, and the connection pressure portion 232 are made of conductive materials, electricity may flow in the order of the element terminal 226 -> pressing tool 311 -> the connection receiving portion 225 -> the spring (pressure fitting) 236 -> the connection pressure portion 232. In this case, if the resistance value of the spring (pressure fitting) 236 is large, a current may flow through the spring (pressure fitting) 236, causing the spring, etc. to generate heat and burn out.

[0110] By forming any of the pressing tool 311, the connection receiving part 225, the spring (pressure fitting) 236, and the connection pressure part 232 from a non-conductive material, the above-mentioned current path is eliminated, and the spring, etc., is also prevented from burning. As shown in FIG. 1(b) and other figures, it is preferable that the heat pipe fitting 231 and the connection holding part 233 are integrally formed, and the heat generated by the element terminal 226 is transferred to the heat pipe fitting 231 and then to the heat pipe 223.

[0111] 7 is an explanatory diagram of a state in which an element terminal 226 of a semiconductor element in an electrical element testing apparatus according to another embodiment of the present invention is connected to a connection structure 218. The element terminal 226 is sandwiched between a connection receiving portion 225 and a connection holding portion 233. A connection pressure portion 232 is fixed to the connection holding portion 233 by a fixing screw 224b.

[0112] In the embodiment of the present invention in Fig. 7, screw hole 239 is formed in insulating plate 312. Pressing tool 311 contacts element terminal 226, and spring 236 presses pressing tool mounting plate 313. Insulating plate 312 is disposed above pressing tool mounting plate 313, providing insulation between pressing tool mounting plate 313 and spring 236. Spring hole 239 is formed in insulating plate 312, and spring 236 is inserted into spring hole 239. Other configurations are similar to those in Fig. 6, and therefore description thereof will be omitted.

[0113] The insulating plate 312 may be an insulating film, an insulating film, or an insulating gas such as air. It may also be a combination of a plurality of insulating materials. An insulating material or insulating film may be formed on the surface of the connection receiving portion 225 by using hexavalent chromium, anodizing, or the like.

[0114] In order to facilitate understanding, FIG. 7 illustrates a space between the connection pressure portion 232 and the connection holding portion 233, but in reality, the connection pressure portion 232 and the connection holding portion 233 are electrically connected.

[0115] 7 is a diagram showing a state in which the element terminal 226 is sandwiched between the connection receiving portion 225 and the connection pressure portion 232. The element terminal 226 is press-fitted between the connection receiving portion 225 and the connection holding portion 233, thereby being electrically connected.

[0116] The connection receiver 225 is configured to be able to slide up and down by springs 236 arranged at the four corners. The connection receiver 225 is positioned by a screw pin (position fixing pin) 237 inserted into a positioning screw hole 240. Therefore, the connection receiver 225 can slide up and down without being displaced.

[0117] An element terminal 226 of a semiconductor element to be tested is inserted between the connection holding portion 233 and the connection receiving portion 225. The edges of the connection receiving portion 225 and the portion C of the connection holding portion 233 are cut, which makes it easy to insert the element terminal 226 of the semiconductor element. Therefore, by inserting the connection structure 218 from the C2 chamber to the C1 chamber, it can be easily electrically connected to the element terminal 226 of the semiconductor element 117.

[0118] Fig. 8 is an explanatory diagram and a configuration diagram of the pressure mounting plate 313 of Fig. 6. Fig. 8(a) is a side view of the pressure mounting plate 313, and Fig. 8(b) is a bottom view of the pressure mounting plate 313 as seen from the rear side.

[0119] As shown in Fig. 8(b), a plurality of pressing tools 311a and a plurality of pressing tools 311b are arranged in a matrix on the back surface of the pressure mounting plate 313. In addition, as shown in Fig. 8(a), the pressing tool 311 is fitted into the pressure mounting plate 313.

[0120] A positioning screw hole 240 is formed in the pressure mounting plate 313, and a positioning fixing screw 237 is inserted into the positioning screw hole 240. In addition, a spring hole 239 is formed in the pressure mounting plate 313, and a spring 236 is inserted into the spring hole 239. In the embodiment of FIG. 6, a spring (pressure fitting) 236 applies an appropriate pressure between the pressing tool 311 and the element terminal 226, thereby maintaining a good electrical connection.

[0121] 6, spring (pressure fitting) 236 is inserted into spring hole 239 of connection receiving portion 225. If spring (pressure fitting) 236, connection receiving portion 225, and connection pressure portion 232 are made of conductive materials, electricity may flow from element terminal 226 → connection receiving portion 225 → spring (pressure fitting) 236 → connection pressure portion 232. In this case, if the resistance value of spring (pressure fitting) 236 is large, current may flow through spring (pressure fitting) 236, causing the spring to heat up and burn out.

[0122] If the pressing tool 311 is made of a non-conductive material and configured so that no current flows through the pressing tool mounting plate 313, the above-mentioned current path will not be generated and the spring (pressure fitting) 236 will not burn out.

[0123] 7 is an explanatory diagram and configuration diagram of a connection structure 218 in another embodiment of the present invention. In the embodiment of the present invention in FIG. 7, a screw hole 239 is formed in an insulating plate 312. A pressing tool 311 contacts an element terminal 226, and a spring 236 presses a pressing tool mounting plate 313. An insulating plate 312 is disposed above the pressing tool mounting plate 313, and insulates between the pressing tool mounting plate 313 and the spring 236. A spring hole 239 is formed in the insulating plate 312, and a spring 236 is inserted into the spring hole 239.

[0124] As shown in Fig. 7, pressing tool 311 comes into contact with element terminal 226, and spring 236 presses pressing tool mounting plate 313. An insulating plate 312 is disposed on the upper side of pressing tool mounting plate 313 to provide insulation between pressing tool mounting plate 313 and spring 236. A spring hole 239 is formed in insulating plate 312, and spring 236 is inserted into spring hole 239. Other configurations are similar to those in Fig. 6, so description will be omitted.

[0125] Fig. 9 is an explanatory diagram of the pressing tool attachment plate 313 and insulating plate 312 of the connection structure 218 in Fig. 7. Fig. 9(a) is a side view of the pressing tool attachment plate 313. Fig. 9(b) is a side view of the pressing tool attachment plate 313 as viewed from side A in Fig. 9(a).

[0126] Pressing tools 311a and 311b are disposed and inserted into pressing tool mounting plate 313. In the embodiment of Fig. 9, insulating plate 312 and protruding portion 251 are made of an insulating material, and screw hole 239 is formed in insulating plate 312. Therefore, since screw hole 239 is insulated, no current path is generated in connection pressure portion 232.

[0127] Since the insulating plate 312 is made of an insulating material, even if the pressing tool attachment plate 313 is made of a conductive material such as metal, no current flows through the spring (pressure fitting) 236. Therefore, no current path is generated from the element terminal 226 -> connection receiving portion 225 -> spring (pressure fitting) 236 -> connection pressure portion 232.

[0128] The insulating plate 312 may be an insulating film, an insulating film, or an insulating gas such as air. The pressing tool mounting plate 313 may be made of a non-conductive material. An insulator or insulating film may be formed by hexavalent chromium, anodizing, or the like.

[0129] 1(b), by forming the heat pipe fitting 231 and the connection holding portion 233 as one unit, a current or the like can be applied from the heat pipe fitting 231 to the element terminal 226 without a voltage drop. No current flows to the connection receiving portion 225 side. In addition, by arranging the heat pipe 223 up to the vicinity of the element terminal 226 as shown in FIG. 1(b), the heat generated by the element terminal 226 etc. is transferred well via the heat pipe 223.

[0130] As shown in Fig. 1, Fig. 4, etc., it is preferable to place a thermocouple 316 and monitor the temperatures of the element terminal 226 and the electric element 117 to perform test control. The above matters are similar to other embodiments of the present invention. As shown in Fig. 26, it is preferable to also monitor the temperatures of the switch circuit board 201, etc.

[0131] The embodiment of Fig. 7 has a configuration in which insulation is performed by insulating plate 312. The insulating effect of the present invention is not limited to the configuration using insulating plate 312 as in Fig. 7. For example, a configuration shown in Fig. 10 is exemplified.

[0132] Fig. 10 shows a configuration in which an insulating part 315 made of a resin material or the like is arranged around the screw hole 238b of the connection pressure part 232. Fig. 12 is a configuration diagram of the connection pressure part 232 of Fig. 10 seen from the back side. As shown in Fig. 12, the periphery of the screw hole 238b is surrounded by the insulating part 315 so that the screw can be insulated. Note that a fixing screw 224b made of an insulating material may be used.

[0133] No current flows through fixing screw 224b because the periphery of screw hole 238b is insulated by insulating section 315. Therefore, no current path is generated from element terminal 226 → connection receiving section 225 → spring (pressure fitting) 236 → connection pressure section 232, and spring (pressure fitting) 236 is not burned out.

[0134] As described above, the present invention is configured such that insulating plate 312 is disposed on the side of spring 236 that applies pressure, so that current does not flow to pressing tool mounting plate 313 and connection receiving portion 225.

[0135] When a current flows, it flows through pressing parts such as spring 236 and fixing screw 224b, and causes spring 236 and fixing screw 224b to burn out. A current is supplied to element terminal 226 via connection holder 233, which has fewer electrically high resistance parts such as spring 236.

[0136] 6, 7 and 10 show an embodiment of the connection structure 218 having the pressing tool 311. The present invention is not limited to this, and may have a configuration as shown in FIG. 11, for example.

[0137] 11 shows a configuration in which an element terminal 226 is sandwiched between a connection receiving portion 225 and a connection holding portion 233. By roughening the surface of the connection receiving portion 225, it is possible to apply pressure uniformly to the element terminal 226. By making the connection receiving portion 225 out of an insulating material, it is possible to prevent a current path from occurring in the connection pressure portion 232.

[0138] It goes without saying that preventing a current path from occurring on the connection pressure portion 232 side can also be achieved by forming the fixing screw 224b and the connection pressure portion 232 from an insulating material.

[0139] As shown in Fig. 13, the transistor 117 is fixed to a heating / cooling plate 134a and is sandwiched between heating / cooling plates 134b. The transistor 117 is appropriately maintained at a test temperature by the heating / cooling plate 134. As shown in Fig. 18, a heat pipe 223 is attached in the recess 234.

[0140] A test constant current Id is applied from the connection structure 218 to the element terminal 226. The constant current Id is large, at several hundred amperes (A). Contact resistance may occur between the connection receptacle 225 and the element terminal 226. If there is contact resistance, the connection receptacle 225 will heat up when a large current flows through the element terminal 226.

[0141] The heat is conducted to the transistor 117 under test, overheating the transistor 117. Overheating may cause deterioration of the transistor 117 or burning of the element terminal 226. Therefore, the heat generated in the connection receiving portion 225 must be dissipated quickly.

[0142] The connection structure 218 of the present invention has a heat pipe 223. The heat generated in the connection receiving portion 225 is transferred by the heat pipe 223. Therefore, the heat of the connection receiving portion 225 is quickly removed from the connection receiving portion 225.

[0143] Fig. 9(a) is a side view of the pressing tool attachment plate 313. Pressing tools 311a and 311b are disposed and inserted into the pressing tool attachment plate 313. Fig. 9(b) is a view seen from the direction A in Fig. 9(a).

[0144] Since the insulating plate 312 is made of an insulating material, even if the pressing tool attachment plate 313 is made of a conductive material such as metal, no current flows through the spring (pressure fitting) 236. Therefore, no current path is generated from the element terminal 226 -> connection receiving portion 225 -> spring (pressure fitting) 236 -> connection pressure portion 232.

[0145] The embodiment of Fig. 7 has a configuration in which insulation is performed by insulating plate 312. The insulating effect of the present invention is not limited to the configuration using insulating plate 312 as in Fig. 7. For example, a configuration shown in Fig. 12 is exemplified.

[0146] 12 shows a configuration in which insulating section 315 made of a resin material or the like is disposed around screw hole 238b of connection pressure section 232. Because the periphery of screw hole 238b is insulated by insulating section 315, no current flows through fixing screw 224b. Therefore, no current path is generated from element terminal 226 -> connection receiver 225 -> spring (pressure fitting) 236 -> connection pressure section 232, and spring (pressure fitting) 236 will not burn out.

[0147] As described above, the present invention is configured such that insulating plate 312 is disposed on the side of spring 236 that applies pressure, so that current does not flow to pressing tool mounting plate 313 and connection receiving portion 225.

[0148] When a current flows, it flows through pressing parts such as spring 236 and fixing screw 224b, and causes spring 236 and fixing screw 224b to burn out. A current is supplied to element terminal 226 via connection holder 233, which has fewer electrically high resistance parts such as spring 236.

[0149] The present invention has a structure in which the connection receiving portion 225 slides in the vertical direction and the element terminal 226 is tightly held between the connection holding portion 233 and the connection receiving portion 225, so that the generation of contact resistance is extremely small. Even if the semiconductor element 117 moves due to vibration or the like during testing, the element terminal 226 does not move because it is held in a pinch, and good electrical connection is maintained.

[0150] 38 and 39 are explanatory diagrams of a semiconductor element 117 to be tested as an example. Fig. 38 illustrates a transistor as the semiconductor element 117. The transistor 117 has a P terminal (collector terminal of the transistor 117) to which a large current is applied, and an N terminal (emitter terminal of the transistor 117) to which a large current is applied. A diode Di is formed or added between the emitter terminal and the collector terminal. A test current Id is applied to the P terminal and the N terminal.

[0151] A collector terminal c, a gate terminal g, and an emitter terminal e are arranged in the transistor 117. A signal Vgs for turning on and off the transistor 117 is applied to the gate terminal g. A constant current Ic is applied to the diode Di from a constant current circuit 118 between the emitter terminal e and the collector terminal c.

[0152] As shown in Figures 15 and 17, a partition wall 217 is disposed between the C1 chamber and the C2 chamber. An opening 216 is formed in the partition wall 217. A connection structure 218a1 is inserted into the opening 216a1, and a connection structure 218b1 is inserted into the opening 216b1. A connection structure 218a2 is inserted into the opening 216a2, and a connection structure 218b2 is inserted into the opening 216b2. A connection structure 218an is inserted into the opening 216an, and a connection structure 218bn is inserted into the opening 216bn.

[0153] 29, the P terminal of the transistor 117Q1 to be tested is sandwiched and electrically connected between the connection receiving portion 225 and the connection holding portion 233 of the connection structure 218a1. Also, the N terminal of the transistor 117Q1 to be tested is sandwiched and electrically connected between the connection receiving portion 225 and the connection holding portion 233 of the connection structure 218b1.

[0154] Similarly, the P terminal of the transistor 117Q2 to be tested is sandwiched and electrically connected between the connection receiving portion 225 and the connection holding portion 233 of the connection structure 218a2. Moreover, the N terminal of the transistor 117Q2 to be tested is sandwiched and electrically connected between the connection receiving portion 225 and the connection holding portion 233 of the connection structure 218b2.

[0155] Similarly, the P terminal of the transistor 117Qn to be tested is sandwiched and electrically connected between the connection receiving portion 225 of the connection structure 218an and the connection holding portion 233. Moreover, the N terminal of the transistor 117Qn to be tested is sandwiched and electrically connected between the connection receiving portion 225 of the connection structure 218bn and the connection holding portion 233.

[0156] An electrostatic shield plate or electrostatic shield net is arranged on the partition 217, which blocks noise from the power supply device 132 and the drive circuit system in chamber B, and the noise is not propagated to chamber C1. In addition, noise generated by turning on and off the transistor 117 is not propagated to the drive circuit system in chamber B.

[0157] 22 is an explanatory diagram illustrating the connection state between the transistor 117 and the connection structure 218. The transistor 117 is fixed in close contact with the heating and cooling plate 134a. The fixing is performed by a spring (not shown). The adhesion may be achieved by applying thermally conductive grease or a silicone oil compound for heat dissipation. If necessary, as shown in FIG. 1(a), a heating and cooling plate 134b is also disposed above the transistor 117 so that the transistor 117 can be set to a predetermined temperature condition.

[0158] A connector 202 is connected to the terminals (emitter terminal e, gate terminal g, collector terminal c) of the transistor 117. A signal wiring 222 is drawn out to the connector 202. A control signal Vgs to be applied to the gate terminal g of the transistor 117 and a constant current Ic from a constant current circuit 118 are applied to the signal wiring 222.

[0159] 22 etc., the connection structure 218a is inserted into the opening 216a of the partition wall 217 from the C2 chamber side. The connection structure 218b is similarly inserted into the opening 216b of the partition wall 217 from the C2 chamber side. When the connection structure 218 is inserted, the element terminal 226 is sandwiched between the connection receiving portion 225 and the connection holding portion 233. In this state, the element terminal 226 of the transistor 117 and the connection structure 218 are electrically connected by tightening the fixing screw 224b.

[0160] The transistors 117 to be tested need to be fixed in close contact with the heating and cooling plate 134, and therefore cannot be easily removed. The installation work of the transistors 117 begins with fixing the multiple transistors 117 to be tested to the heating and cooling plate 134. Next, the transistor 117 to be tested first is selected, and a connection structure 218 is attached to the element terminal 226.

[0161] The selected transistor 117 is electrically connected to the element terminal 226 by inserting a connection structure 218 from the C2 chamber side into the opening 216 in which the selected transistor 117 is located.

[0162] Electrical connection with the transistor 117 is easy since it is only necessary to select the position for inserting the connection structure 218. In addition, by changing the signal applied to the connection wiring 211 connected to the connection structure 218, the test conditions and test contents of the transistor 117 can be easily changed.

[0163] The element terminal 226 is clamped by applying pressure between the connection receiving portion 225 and the connection holding portion 233. A connection wiring 211 is connected to one end of the connection structure 218, and a constant current Id is applied from the connection wiring 211 to the transistor 117. A heat pipe 223 is disposed on the rear surface side of the connection structure 218. By disposing the heat pipe 223 on the rear surface side of the connection structure 218, the occurrence of mechanical damage is reduced. In addition, as shown in FIG. 22, cooling by a cooling fan 227 is also facilitated.

[0164] A current of several hundred amperes (A) flows through element terminal 226. Even if there is a slight resistance in connection receptacle 225, etc., a current of several hundred amperes (A) generates a large amount of heat, overheating element terminal 226. If this is overheated, transistor 117 will also be overheated, causing degradation or destruction of transistor 117.

[0165] In the present invention, heat generated in the connection receiving portion 225, the connection holding portion 233, etc. is transferred to the connection wiring 211 side of the connection structure 218 by the heat pipe 223. Therefore, the connection receiving portion 225, the connection holding portion 233, etc. do not overheat. A cooling fan 227 is arranged below the connection structure 218, or the connection structure 218 is directly water-cooled to dissipate heat from the heat pipe 223. FIG. 23 is an explanatory diagram for explaining a method of connecting a semiconductor element 117 and a connection structure 218 in the semiconductor testing device of the present invention.

[0166] A partition 217 is provided between the C1 chamber and the C2 chamber. An opening 216 is formed in the partition 217 in correspondence with the positions of the transistors 117 to be tested, etc., as shown in Fig. 17. The opening 216 of the partition 217 and a fixing base (not shown) of the connection structure 218 allow the connection structure 218 to be positioned horizontally or stably and fixed.

[0167] 23(a), the transistor 117 to be tested is positioned and fixed in close contact with the heating and cooling plate 134a. Thermally conductive grease and silicone oil compound for heat dissipation are applied between the transistor 117 and the heating and cooling plate 134a.

[0168] A detachable connector 202 is connected to the terminals (emitter terminal e, gate terminal g, collector terminal c) of the transistor 117. A signal wiring 222 is connected to the connector 202, and the signal wiring 222 is connected to a sample connection circuit 203.

[0169] The signal wiring 222 between the sample connection circuit 203 and the connector 202 is formed to be as short as possible. If the signal wiring 222 is long, noise is superimposed on the signal wiring 222, causing the transistor 117 to malfunction. For example, if noise is superimposed on the gate terminal g of the transistor 117, the transistor 117 may turn on and break down. The signal wiring 222 should be twisted or a shielded wiring such as a coaxial cable should be used.

[0170] 15, the connector 208 is provided on the side of the housing 210, and the connector 208 and a device control circuit board 209 arranged in room B are connected by signal wiring 235. Control signals or output signals of the gate driver circuit 113, the gate signal control circuit 112, the temperature measurement circuit 115, the variable resistance circuit 125, and the operational amplifier circuit 116 are input / output from / to the device control circuit board 209.

[0171] 23(b), the connection structure 218a is inserted into the opening 216a. As shown in Fig. 4 and Fig. 5, the edge portions indicated by C of the connection receiving portion 225 and the connection holding portion 233 are cut or processed into an arc shape, so that even if the position of the element terminal 226 varies slightly, the connection structure 218a can be satisfactorily inserted into the connection receiving portion 225 and the connection holding portion 233 and the element terminal 226 can be clamped.

[0172] By inserting connection structure 218a into opening 216a, element terminal 226a of transistor 117 is sandwiched between connection receiving portion 225 at the tip of connection structure 218a and connection holding portion 233. After connection structure 218a and element terminal 226a are coupled, fixing screw 224b1 is tightened to achieve good electrical connection between connection receiving portion 225 and element terminal 226.

[0173] Similarly, connection structure 218b is inserted into opening 216b. By inserting connection structure 218b into opening 216b, element terminal 226b of transistor 117 is sandwiched between connection receiving portion 225 at the tip of connection structure 218b and connection holding portion 233. After connection structure 218b and element terminal 226b are coupled, fixing screw 224b2 is tightened to achieve good electrical connection between connection receiving portion 225 and element terminal 226.

[0174] A cooling fan 227 for removing heat from the heat pipe 223 is disposed on the rear surface of the connection structure 218. The rotation speed of the cooling fan 227 is controlled according to the overheating state of the element terminal 226 and the heat pipe 223.

[0175] 18, the heat pipe 223 is attached to the recess 234 of the heat pipe metal fitting 231 of the connection structure 218. However, the present invention is not limited to this.

[0176] For example, a connection structure 218 may be configured as shown in Fig. 19. In Fig. 19, Fig. 19(a) is a schematic diagram of the back surface (lower surface) of the connection structure 218, and Fig. 19(b) is a schematic diagram of the front surface (upper surface) of the connection structure 218.

[0177] 19, heat pipe 223a is disposed on concave surface 234a. Heat pipe 223a is formed or disposed up to connection holding portion 233. By forming or disposing heat pipe 223a up to connection holding portion 233, heat generated by element terminal 226 can be transferred more efficiently.

[0178] 19(b), the heat pipe 223b is disposed on the concave surface 234b. By disposing the heat pipes 223 on both sides of the connection structure 218, the heat generated by the element terminals 226 can be transferred more efficiently.

[0179] 18 and the like, the heat pipe 223 and the like are cooled by the cooling fan 227, but the present invention is not limited to this. For example, as shown in Fig. 20, the heat dissipation fins 228 may be formed or arranged so as to be in close contact with the heat pipe 223. The heat transferred inside the heat pipe 223 is efficiently transferred to the heat dissipation fins 228, and the heat transfer and heat dissipation effect of the heat pipe 223 is further improved.

[0180] 20 is not formed or arranged in a location corresponding to the opening 216. The connection structure 218 is inserted from the C2 chamber to the C1 chamber through the opening 216. In order to maintain the airtightness of the C1 chamber, the opening 216 has a size equal to the cross-sectional area of ​​the connection structure 218 plus α. Therefore, if the heat dissipation fin 228 is formed or arranged on the connection structure 218, it cannot be inserted into the opening 216. Therefore, the heat dissipation fin 228 is not formed or arranged on the side connected to the element terminal 226 of the transistor 117 with respect to the partition wall 217.

[0181] 21, a circulating water pipe 135 may be formed or disposed in the connection structure 218 to cool the connection structure 218. The connection structure 218 is cooled by the refrigerant flowing in the circulating water pipe, and the heat in the heat pipe 223 is efficiently transferred to the connection structure 218. Therefore, the heat generated in the element terminal 226 is efficiently dissipated.

[0182] The transistor 117 (semiconductor element 117) in FIG. 38 has two element terminals 226 (element terminal 226a (P) and element terminal 226b (N)). However, as shown in FIG. 39, there are also transistors 117 whose element terminals 226 have three terminals, element terminal 226a (P), element terminal 226b (N), and element terminal 226c. The semiconductor element testing apparatus and semiconductor element testing method of the present invention are capable of testing a wide variety of semiconductor elements 117.

[0183] 39, two transistors, a transistor 117m and a transistor 117s, are arranged in one package. The collector terminal c of the transistor 117s is connected to the element terminal 226a. The emitter terminal e of the transistor 117s and the collector terminal c of the transistor 117m are connected, and the midpoint is connected to the element terminal 226c. The emitter terminal e of the transistor 117m is connected to the element terminal 226b.

[0184] An emitter terminal e1, a gate terminal g1, and a collector terminal c1 are connected to the transistor 117m, while an emitter terminal e2, a gate terminal g2, and a collector terminal c2 are connected to the transistor 117s.

[0185] FIG. 24 is an explanatory diagram illustrating a connection state between a transistor 117 (semiconductor element 117) having three element terminals 226 (element terminal 226a (P), element terminal 226b (N), element terminal 226c (O)) and a connection structure 218.

[0186] In FIG. 24, the connection between the connection structure 218a and the element terminal 226a, and the connection between the connection structure 218b and the element terminal 226b are similar to those described in FIG. 22 and FIG. 23, and therefore will not be described.

[0187] 24, a heat pipe 223a is formed or arranged in the connection structure 218a, and a heat pipe 223b is formed or arranged in the connection structure 218b, whereas a heat pipe 223 is not formed or arranged in the connection structure 218c. The connection structure 218c is connected to the element terminal 226c. No large current flows through the element terminal 226c(O) of the transistor 117. Therefore, the element terminal 226c is not overheated.

[0188] There is no need to form a heat pipe 223 in the connection structure 218c. By forming the connection structure 218c thinner than the other connection structures 218 (connection structures 218a, connection structures 218b), it becomes easier to connect the connection structure 218 and the element terminal 226 of the transistor 117. In addition, since the space for arranging the transistor 117 may be narrow, the number of transistors 117 that can be mounted on the heating / cooling plate 134 can be increased.

[0189] Needless to say, the heat pipe 223 may be formed or disposed in the connection structure 218c. Other details are the same as or similar to the embodiment of Fig. 22 and Fig. 23, and therefore description thereof will be omitted. The method for testing a semiconductor device according to the present invention will be described below. Figures 25, 26 and 30 are explanatory diagrams of the method for testing a semiconductor device according to the first embodiment of the present invention.

[0190] A constant current circuit 118 supplies a constant current Ic to the diode Di of the transistor 117. An operational amplifier circuit 116 buffers and outputs a terminal voltage Vi of the diode Di. The terminal voltage Vi is applied to a temperature measurement circuit 115, which determines temperature information Tj of the transistor 117 from the terminal voltage Vi and transfers it to the controller 111. The temperature information is output from a connector 213 of the device control circuit board 209 to the mother board 207 and then sent to the control circuit board 111 (see FIG. 37, etc.).

[0191] In the method for testing semiconductor element 117 of the present invention, the external conditions or test conditions are changed in response to the deterioration or characteristic changes of transistor 117. For example, if transistor 117 generates heat, the water temperature of chiller 136 is lowered. Reducing the current flowing through transistor 117 prevents the deterioration and characteristic changes of transistor 117 from progressing, and as a result, the lifespan of transistor 117 is extended. Therefore, the lifespan and reliability characteristics of transistor 117 for specified set conditions can be quantitatively measured and determined.

[0192] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water of the chiller 136. The temperature of the transistor, etc. is periodically changed in response to the test conditions, and is cooled or heated to a constant value. Temperature information Tj of the test transistor is measured, and the chiller 136 is controlled to maintain the measured temperature information Tj at a constant value. In the following explanation, the temperature information Tj is exemplified.

[0193] An on-voltage Vg that turns on the gate of the transistor 117 at a set frequency and for a set on-voltage time is output from the gate driver circuit 113. As an example, as shown in Fig. 30(a), the on-off cycle of the transistor 117 is tcycle, the on time is ton, and the off time is toff.

[0194] 30(a), the transistor 117 is controlled to be turned on and off. The gate driver circuit 113 is controlled by a gate signal control circuit 112. The power supply circuit 121 outputs a constant current Id, which is supplied as a test current for the transistor 117 .

[0195] The transistor 117 is turned on and off by the Vgs signal voltage output from the gate driver circuit 113, and a current Id flows between the channels of the transistor 117 while the transistor 117 is on.

[0196] The gate driver circuit 113 has an internal variable resistance circuit 125. The value of the variable resistance circuit 125 is configured so that it can be set to a predetermined value or in steps between 0 (Ω) and 500 (Ω). The value of the variable resistance circuit 125 may be set by a control signal from the control circuit board (controller) 111 while observing the waveform of the gate terminal g.

[0197] A resistor R (not shown) may be disposed between the gate terminal g and the emitter terminal e or collector terminal c of the transistor 117. By adjusting the value of the resistor R, the inclination angles of the rising and falling voltage waveforms of the gate signal can be adjusted.

[0198] When the value of the variable resistance circuit 125 is large, the slope of the rising / falling waveform of the gate signal of the transistor 117 applied to the gate terminal of the transistor 117 becomes gentler.

[0199] On the other hand, when the resistance value of the variable resistance circuit 125 is small, the slope of the rising / falling waveform of the gate signal becomes steeper. By changing the resistance value of the variable resistance circuit 125 or setting it to a predetermined value, the on-time of the transistor 117 can be adjusted.

[0200] The gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) in the gate voltage applied to the gate terminal g of the transistor 117. By separately adjusting the rise time Tr and the fall time Td, the on time of the transistor 117 can be adjusted arbitrarily.

[0201] The resistance value of the variable resistance circuit 125 is set by the control circuit board (controller) 111. The setting is not limited to a constant value. The slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate driver circuit 113 may be changed. The resistance value at the rising edge and the resistance value at the falling edge of the gate signal may be changed. Also, the resistance value may be variably controlled in real time. By variably controlling the variable resistance circuit 125, the on-time of the transistor 117 is stabilized.

[0202] Reducing the resistance value at the rising edge of the gate signal makes the waveform of the on-voltage applied to the gate terminal of transistor 117 steeper, quickly turning on transistor 117. Reducing the resistance value at the rising edge of the gate signal makes the waveform of the on-voltage applied to the gate terminal of transistor 117 gentler, slowly turning on transistor 117.

[0203] Reducing the resistance value when the gate signal falls makes the waveform of the on-voltage applied to the gate terminal of transistor 117 steeper, quickly turning off transistor 117. Reducing the resistance value when the gate signal falls makes the waveform of the on-voltage applied to the gate terminal of transistor 117 gentler, and transistor 117 turns off more slowly.

[0204] As described above, it is possible to control, adjust, or set the value of the variable resistance circuit connected to the gate terminal of the transistor 117, or the rise time / fall time of the gate driver circuit 113. Therefore, as a function of the gate driver circuit 113, it is possible to change or modify the inrush current Is and surge voltage Vs generated in the transistor 117.

[0205] Needless to say, the operation of the transistor 117 can be achieved not only by controlling the on-voltage of the gate terminal of the transistor 117 but also by changing or setting the value of the constant current Id or voltage Vm supplied to the transistor 117 by the power supply circuit 121 .

[0206] The variable resistance circuit 125 of the gate driver circuit 113 is controlled by a control circuit board (controller) 111. The cycle time tcycle, on time ton, and off time toff of the gate signal output by the gate driver circuit 113 shown in FIG. 30 are controlled by a gate signal control circuit 112, and the gate signal is applied to the gate terminal of the transistor 117. In addition, the gate signal control circuit 112 is controlled by the control circuit board (controller) 111.

[0207] 14, 25, 26, 27, 29, etc., the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 is variable, but this is not limited to this. For example, it goes without saying that the variable resistance circuit 125 may be an external resistor, and the resistor may be connected to the gate terminal of the transistor 117 by a connector (not shown) or the like. The value of the resistor to be connected is set by observing the waveform of the gate terminal of the transistor 117 and the waveform of the channel current Id.

[0208] 14, 25, 26, etc., a constant current circuit 118 is connected between a collector terminal c and an emitter terminal e of a transistor 117. The constant current circuit 118 passes a predetermined constant current Ic. The constant current Ic is for monitoring the temperature of the transistor 117.

[0209] In addition, since the present specification will be described taking an IGBT as an example, the terminals of the transistor 117 are a gate terminal g, a collector terminal c, and an emitter terminal e. In the case of a MOS transistor 117, the terminals of the transistor 117 are a gate terminal g, a drain terminal d, and a source terminal s.

[0210] A body diode or a channel diode Di is formed in the transistor 117. Note that the diode Di may be a diode of a separate semiconductor chip mounted on the semiconductor chip on which the transistor 117 is formed.

[0211] The diode Di may be a diode (parasitic diode) formed secondarily when the transistor 117 is formed. The parasitic diode is formed secondarily due to the layer structure of the transistor 117. The diode Di is formed near the channel portion of the transistor 117 due to its structure.

[0212] The diode Di may be any element that does not operate when the transistor 117 is operating. For example, it is not limited to a diode, and it goes without saying that a transistor may be used in diode connection.

[0213] In addition, the device is not limited to a semiconductor such as a diode, but may be a device such as a resistor. A constant current Ic is applied to a device such as a resistor to measure the terminal voltage of the resistor. This voltage is measured as voltage Vi.

[0214] As described above, the element for acquiring the temperature may be not only a semiconductor device, but also a resistor, etc. In other words, any device that can acquire a voltage value by passing a current or a current value by applying a voltage can be used.

[0215] The resistance value of diode Di changes due to heat generation by transistor 117. When a constant current Ic flows through diode Di, the voltage across the terminals of diode Di changes in proportion to the change in the resistance value of diode Di. By monitoring or measuring the voltage across the terminals, the temperature or temperature change of transistor 117 can be known. In order to monitor the temperature of the transistor 117 from the voltage of the diode Di, it is necessary to obtain the temperature coefficient in advance.

[0216] The temperature coefficient is measured by setting the transistor 117 at a predetermined temperature in a thermostatic chamber, passing a constant current Ic through the diode Di, and measuring the terminal voltage of the diode Di. The terminal voltage of the diode with respect to temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode Di. Therefore, the temperature coefficient K of the transistor 117 can be obtained from the terminal voltage of the diode Di with respect to temperature.

[0217] The temperature coefficient K may differ for each production lot of the transistor 117, but generally it is a constant value for each production lot. Therefore, if the transistor 117 to be tested is sampled from each production lot and the temperature coefficient K is calculated, the temperature coefficient K can be used for the other transistors 117.

[0218] To obtain the temperature coefficient K with high accuracy, the temperature coefficient K of each transistor 117 is measured and tested individually, even for the same lot. Measurement of the temperature coefficient K is not limited to using a thermostatic bath. For example, the temperature coefficient K is obtained by changing the temperature of the water flowing through the heat sink on which the transistor 117 is mounted.

[0219] During testing, a test current Id is intermittently applied to the transistor 117. Immediately after the test current Id is turned off, or after a short, predetermined time has elapsed since the test current Id was turned off, a constant current Ic for temperature measurement is caused to flow from a constant current circuit 118.

[0220] In order to prevent the constant current Ic from heating the transistor 117 or to avoid any influence of the constant current Ic, the constant current Ic is set to a current value sufficiently smaller than the constant current Id passed through the channel of the transistor 117. The constant current Id is set to a current value that does not generate heat that would affect the temperature measurement.

[0221] Specifically, the constant current Ic is set to 1 / 1000 or less of the current Id flowing through the transistor 117 during testing. Preferably, the current Ic flowing through the transistor 117 is set to 1×10 6 1 or more 1×10 4 The constant current Ic should be between 0.1mA and 100mA.

[0222] The channel current Id is changed, and the diode Di voltage (the voltage between the collector and emitter terminals of the transistor 117) is measured to obtain the temperature coefficient K. The obtained temperature coefficient K is stored in the temperature measurement circuit 115.

[0223] When measuring temperature, if the diode Di is formed on the same chip as the transistor 117, the saturation voltage Vn may change depending on the gate voltage Vgs. It is preferable that the gate voltage Vgs is zero (0) voltage or a negative voltage (minus voltage).

[0224] 13, based on the temperature information Tj, the control circuit board (controller) 111 controls the chiller 136. The chiller 136 adjusts the temperature of the circulating water (circulating solution), and adjusts the temperature of the heating and cooling plate .

[0225] In the above embodiment, the temperature coefficient K is calculated in advance, but the semiconductor testing method of the present invention is not limited to this. Temperature information Tj of the transistor 117 is calculated from the temperature coefficient and the diode terminal voltage, etc. The transistor 117 is disposed in close contact with the heating / cooling plate 134 , and the temperature of the heating / cooling plate 134 is configured to be approximately equal to that of the transistor 117 .

[0226] A control circuit board (controller) 111 controls a chiller 136 to set the temperature of the heating / cooling plate 134 to a predetermined temperature, applies a constant current Ic to a transistor 117, and measures the terminal voltage of a diode Di.

[0227] From the measurement results, the temperature coefficient K is obtained. The temperature of the heating / cooling plate 134 is set to a plurality of temperatures, the temperature coefficient K is obtained at each temperature, and the accuracy of the temperature coefficient value is improved from the results.

[0228] The temperature coefficient K is obtained by heating the transistor 117 to a predetermined temperature using the heating / cooling plate 134, passing a constant current Ic through the diode Di, and measuring the terminal voltage. The terminal voltage of the diode Di versus temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode Di. Therefore, the temperature coefficient K of the transistor 117 can be obtained from the terminal voltage of the diode Di versus temperature.

[0229] When testing the transistor 117, the constant current Ic is caused to flow through the diode Di when the channel current Id is not flowing. In other words, when the transistor 117 is not turned on, the constant current Ic is caused to flow and the voltage across the diode Di is measured.

[0230] The operational amplifier circuit (buffer circuit) 116 outputs the terminal voltage Vi (terminal c-terminal e) of the diode Di. The operational amplifier circuit 116 is not limited to being composed of an operational amplifier element. Any circuit having high input impedance and low output impedance may be used. The temperature measurement circuit 115 obtains temperature information Tj of the transistor 117 being tested from the stored temperature coefficient K and voltage Vi.

[0231] The obtained temperature information Tj is sent to a control circuit board (controller) 111. When the temperature information Tj becomes equal to or exceeds a predetermined set value, the control circuit board (controller) 111 determines that the transistor 117 is in a predetermined stress state or deteriorated state, and changes the control of the test or stops the test.

[0232] In most cases, the parts of the transistor that deteriorate during testing are mainly the junctions within the transistor 117. The semiconductor itself does not deteriorate, but the junctions (bonding, die bonding, etc.) of the transistor 117 deteriorate, causing the resistance value of the junctions to increase. As the resistance value increases, the voltage Vce increases, generating heat and raising the temperature of the transistor 117.

[0233] When a semiconductor deteriorates, it is often the deterioration of the gate oxide film (insulating film) of the transistor 117. When the gate oxide film deteriorates, the oxide film (insulating film) is short-circuited and the voltage Vce drops. Alternatively, the transistor 117 is turned off, no current flows through the transistor 117, and the voltage Vce rises to the maximum value of the power supply voltage.

[0234] At the start of the test, the temperature information Tj varies between the minimum temperature T1 and the maximum temperature T2. When the transistor 117 is subjected to stress by the test, the Vce voltage of the transistor 117 varies, and the temperature information Tj usually varies in the increasing direction. Therefore, as shown in FIG. 31(c), the minimum temperature rises above temperature T1, and the maximum temperature approaches temperature information Tm (Tjmax). In the semiconductor testing method of the present invention, the test is terminated under any of the following conditions: When the temperature information Tj is outside the specified range. When the channel voltage Vce falls outside the specified voltage range. If the thermal resistance is outside the specified range.

[0235] In the embodiments of Figures 14, 25, 26, 27, 28, 29, etc., the switch circuit Ssa124a and the switch circuit Sab124b use the symbols for the switch circuits. Any element can be used as the switch circuit for the switch circuit Ssa124a and the switch circuit Sab124b as long as the resistance (on resistance) when closed (on) is small. Examples include a transistor, a mechanical relay, a phototransistor, a photodiode switch, etc.

[0236] Fig. 26 is an equivalent circuit diagram of a semiconductor device testing device in the first embodiment of the present invention. In this embodiment, the switch circuit Ssa and the switch circuit Sab use a power MOSFET 124 as shown in Fig. 26. The voltage (Vsd) between the channels of the power MOSFET is small.

[0237] It is to be noted that the switch circuits may be other than power MOSFETs. It goes without saying that the switch circuits Ssa and Sab may be power transistors or the like, in addition to power MOSFETs. Other examples include electromagnetic relays and electromagnetic switches.

[0238] The channel voltage (Vsdb) of the power MOSFET 124b when it is on is selected to be equal to or lower than the channel voltage (Vsda) of the power MOSFET 124a when it is on. In other words, the channel voltage (Vsdb) of the power MOSFET 124b when it is on is set to be smaller than the channel voltage (Vsda) of the power MOSFET 124a when it is on. This is to completely short-circuit the terminals of the power supply circuit 121 when the switch circuit 124b is turned on, and to allow the current Im to flow stably. The above also applies when the switch circuit 124 is a power transistor, etc. In the case of the power transistor 124, the channel voltage is Vce. When the switch circuit 124a is turned on, the current Id output by the power supply circuit 121 can be supplied to the transistor 117 as the test current Id.

[0239] The switch circuit 124 is mounted on a switch circuit board 201. The switch circuit 124 is connected to a conductor plate 204 (metal plate, conductive plate). The conductor plate 204 is, for example, a copper plate having a thickness of 5 mm and a width of 50 mm. The length of the conductor plate 204 is the width of the circuit board plus the width for connecting the fork plug 205.

[0240] In the embodiment of the present invention, the fork plug 205 and the conductive plate 204 are electrically connected by contacting each other, but this is not limited to this. Any structure may be used as long as it can change between an electrically connected state and a non-connected state by a mechanical operation. Also, any structure may be used as long as it can stably maintain the connected state.

[0241] For example, a rotary connector, a rotary joint, a high-current connector, etc. may be used instead of the fork plug 205. A rotary connector, a rotary joint, a high-current connector, a cylindrical conductor rod, a rectangular conductor rod, a comb-shaped conductor plate, etc. may be used instead of the conductor plate 204.

[0242] Although the present specification and drawings will be described as a conductor plate 204, it is not limited to a plate, and may be rod-shaped. Any shape may be used as long as it can be joined to a structure such as the fork plug 205. For example, it may be a structure such as a socket or a connector. Also, the conductor plate 204 may be in the shape of a fork plug, and the fork plug 205 may be connected to the fork plug.

[0243] Although the fork plug 205 is described as being inserted into a component or structure that separates spaces such as the partition wall 214, the present invention is not limited to this. For example, a fork plug 205c may be connected to the conductive plate 204b, and the fork plug 205c may be inserted from the partition wall 214 to electrically connect with the emitter terminal e of the transistor 117.

[0244] 36 illustrates fork plug 205 and the connection (contact) state between fork plug 205 and conductor plate 204. Two conductor plates 204 are attached to switch circuit board 201. Switch circuit board 201 has a full-surface earth layer (not shown), which is thermally connected to conductor plate 204. Heat from conductor plate 204 is dissipated via the full-surface earth layer. Conductive plate 204 and switch circuit board 201 are secured with screws.

[0245] Although the contact portion 220 is illustrated as being disposed or formed directly on the fork plug 205, the present invention is not limited to this. For example, as described in Fig. 7 and other drawings, it goes without saying that the contact portion 220 may be configured to slide by providing the spring 236, the spring hole 239, the position fixing screw 237, the screw hole 238, etc. on the contact portion 220.

[0246] The switch circuit 124 is connected to two conductor plates. As shown in Fig. 26, when the switch circuit 124 is a MOS transistor, the drain terminal and the source terminal are connected to different conductor plates 204. When the switch circuit 124 is a bipolar transistor, the collector terminal and the emitter terminal are connected to different conductor plates 204. When the switch circuit 124 is turned on (conductive), the two conductor plates 204 are electrically connected. An IGBT can also be used as the switch circuit 124.

[0247] The contact portion 220 of the fork plug 205 may be made of platinum, gold, silver, tungsten, copper, nickel, or an alloy of a combination thereof. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0248] Fork plug 205 and conductor plate 204 are electrically connected by mechanically fitting them together. When the U-shaped portion of fork plug 205 is inserted into conductor plate 204, the U-shaped portion expands slightly, and fork plug 205 and conductor plate 204 are satisfactorily joined. The satisfactorily joined or fitted portion has extremely low electrical resistance at the connection, and no heat is generated or voltage drops occur even when a large current flows through the connection portion.

[0249] A connection bolt 219 is attached to the fork plug 205. A connection wiring 211 is connected to the connection bolt 219. A cross section taken along line AA' in Fig. 36(a) is shown in Fig. 36(b). The conductive plate 204 and the fork plug 205 are in contact with each other at contact parts 220a and 220b formed on the fork plug 205. The surface of the contact part 220 is silver plated. The contact part 220 is made of phosphor bronze and nickel alloy. The connection bolt 219 is not limited to a bolt, and may be anything that can electrically connect the fork plug 205 and a wire. At least the surface of the conductive plate 204 that comes into contact with the fork plug 205 is plated with silver.

[0250] 16 is a diagram showing the configuration of a semiconductor device testing apparatus according to the present invention. A connection structure 218a is inserted into an opening 216a of a partition wall 217, and a connection structure 218b is inserted into an opening 216b of the partition wall 217.

[0251] The connection structure 218a is coupled to an element terminal 226a of the transistor 117, and the connection structure 218b is coupled to an element terminal 226b of the transistor 117. A circulating water pipe 135 is incorporated into the heating / cooling plate 134. A thermocouple 316 is disposed on the package of the transistor 117 to measure or acquire the temperature of the transistor 117 during testing.

[0252] A connector 202 is connected to a terminal of the transistor 117, and a signal wiring 222 connected to the connector 202 is connected to a sample connection circuit 203. A signal wiring 235 of the sample connection circuit 203 is connected to a device control circuit board 209 via a connector 208.

[0253] 16 etc., the fork plug 205 and the conductor plate 204 are brought into contact with each other by inserting the fork plug 205 through an opening 216 in the partition wall 214. At the time of contact, the U-shaped portion of the fork plug 205 is expanded by the conductor plate 204, and a firm contact is made.

[0254] 15 shows a layout diagram of each component of the semiconductor device testing apparatus of the present invention. The housing 210 of the semiconductor device testing apparatus is separated into three parts. The lower part of the housing is separated into chamber A and chamber B. The power supply unit 132 is placed in chamber A. Chamber A and chamber B are separated by a partition wall 215.

[0255] Each chamber is shielded. The power supply device 132, switch circuit board 201, and transistor 117 generate large noise as they repeatedly operate and deactivate. Since noise can cause the circuit boards and other components to malfunction, the shielding prevents such malfunctions. The shielding is achieved by placing conductive plates, metal plates, and metal films around each chamber.

[0256] In the C1 room, the heating / cooling plate 134, the circulating water pipe 135, etc. shown in FIG. 13 are arranged, and the transistor 117 to be tested is arranged on the heating / cooling plate 134.

[0257] Partition walls 214 are formed between chamber C1 and chambers A and B. A water leakage sensor (not shown) is disposed around the heating and cooling plate of chamber C1. If circulating water (cooling medium) or the like leaks, the water leakage sensor is activated and is configured to stop the semiconductor device testing equipment or sound an alarm.

[0258] In addition, a drainage groove is formed around the periphery of the heating and cooling plate, so that if circulating water (cooling medium) leaks from the heating and cooling plate, the circulating water (cooling medium) flows into the drainage groove and is discharged outside the semiconductor element testing equipment. As described above, the partition wall 214 is configured so that even if the circulating water pipe 135 is damaged, the circulating water (cooling medium) and the like will not leak into the lower chambers A and B.

[0259] A partition 215 is formed between chamber A in which the power supply unit 132 is disposed and chamber B in which the drive circuit system is disposed. Electrostatic shielding plates are disposed in the partitions 214, 215, and 217 to block noise from the power supply unit 132 and prevent the noise from being applied to the drive circuit system in chamber B.

[0260] In the embodiment of the present invention, the fork plug 205 is inserted from the C2 chamber and connected to the conductive plate 204 in the B chamber. The operation of pushing the fork plug 205 from the top to the bottom is easy. However, the present invention is not limited to this. For example, the conductive plate 204 may be placed in the C2 chamber, and the fork plug 205 may be inserted from the B chamber to establish an electrical connection. Furthermore, the connection structure 218 is inserted from the C2 chamber, and the element terminals 226 of the semiconductor element 117 and the connection structure 218 are connected.

[0261] 15 etc., the connection structure 218 is inserted from the C2 chamber into the C1 chamber, and electrically connected to the element terminal 226 of the transistor 117. In addition, the fork plug 205 is inserted from the C2 chamber into the B chamber, and electrically connected to the fork plug 205 and the conductor plate 204. The transistor 117 is fixed to the heating / cooling plate 134, and the switch circuit board 201 is fixed at the position of the mother board 207. The connection structure 218 and the fork plug 205 are electrically connected by the connection wiring 211.

[0262] The position of the opening 216 can be selected with the connection structure 218 to select the transistor 117 to be tested. By selecting the opening into which the fork plug 205 is inserted, the switch circuit board 201 to be controlled can be easily selected and the test method and test conditions can be changed. Therefore, by using the connection structure 218 and the fork plug 205 in the present invention, the transistor 117 can be easily selected and the test method, etc. can be changed in a short time.

[0263] The partitions 214, 215, and 217 may be wall-shaped structures, plate-shaped structures, film-shaped objects, mesh-shaped objects, wire net-shaped objects, etc. One example is phenolic resin (phenolic resin, phenol-formaldehyde resin, phenolic resin). The partitions may be any object that separates the first and second parts of the semiconductor device testing apparatus.

[0264] 37, a connector 213 is attached to a mother board 207. A control circuit board 111, a device control circuit board 209, and a switch circuit board 201 are attached to the connector of the mother board 207. The number of switch circuit boards 201 to be prepared according to the number of transistors 117 to be tested can be easily realized by changing the number of switch circuit boards 201 to be attached to the mother board 207.

[0265] Temperature information Tj, voltage Vi, a control signal for the variable resistance circuit 125, a control signal for the constant current circuit 118, etc. are transmitted to the mother board 207. In addition, power supply wiring and ground wiring for each circuit are formed and supplied to each circuit board via a connector 213. The conductive plate 204 is disposed so as to protrude from the switch circuit board 201. A fork plug 205 is connected to this protruding portion.

[0266] The fork plug 205a is connected to the conductor plate 204a of the switch circuit board 201a. The power supply wiring 212 is connected to the switch circuit board 201a through an opening 216 in the partition wall 215. The fork plug 205d is connected to the conductor plate 204c of the switch circuit board 201b. The power supply wiring 212 is connected to the switch circuit board 201b through an opening 216 in the partition wall 215. The fork plug 205b is connected to the conductor plate 204b of the switch circuit board 201a. The power supply wiring 212 is connected to the switch circuit board 201a through an opening 216 in the partition wall 215.

[0267] 14, 25, etc., a switch circuit 124a is disposed between the conductor plate 204d and the conductor plate 204c of the switch circuit board 201b, and short-circuits the conductor plate 204d and the conductor plate 204c. By short-circuiting, a current Id outputted from the power supply circuit 121 is supplied to the transistor 117 as a test current Id.

[0268] A switch circuit 124b is disposed between conductive plates 204a and 204b of switch circuit board 201a, and when switch circuit 124b is turned on, conductive plates 204a and 204b are short-circuited. When this is short-circuited, current Id output by power supply circuit 121 flows to ground as discharge current Im, and the channels of transistor 117 are short-circuited. When the channels are short-circuited, no overvoltage or overcurrent is applied to transistor 117.

[0269] A fork plug 205 is connected to the conductive plate 204. A fork plug 205c is connected to the conductive plate 204b. A fork plug 205b is connected to the conductive plate 204a. A fork plug 205e is connected to the conductive plate 204d. A fork plug 205d is connected to the conductive plate 204c.

[0270] Fig. 36 is a configuration diagram of fork plug 205. Fig. 36(a) shows a state in which conductor plate 204 attached to switch circuit board 201 and fork plug 205 are coupled together. Fig. 36(b) shows a coupled state of conductor plate 204 and fork plug 205 when a cross section taken along line AA' in Fig. 36(a) is viewed from the direction of the arrow.

[0271] The fork plug 205 is made of a metal such as aluminum. The surface is nickel-plated and then silver-plated. The fork plug 205 has a threaded groove, and is configured so that the connection wiring 211 can be attached to the fork plug 205 with a connection bolt 219.

[0272] The convex contact portion 220 is made of phosphor bronze or copper alloy. The surface of the contact portion 220 is silver plated. The insertion force of the fork plug 205 into the conductive plate 204 is set to be 40 to 60 N.

[0273] Platinum, gold, silver, tungsten, copper, nickel, or alloys of combinations thereof may be used for the contact portion 220. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0274] Although two switch circuit boards 201 are shown in FIG. 37, two or more switch circuit boards 201 may be required depending on the number of transistors 117 to be tested, and the switch circuit boards 201 are connected to connectors 213 of the mother board 207.

[0275] As shown in FIG. 16, the fork plug 205c is inserted through an opening 216 in a partition wall 214 provided between the C2 chamber and the B chamber, and the conductor plate 204b and the fork plug 205c are connected. The transistor 117 to be tested and the heating and cooling plate 134 are arranged in the C1 chamber, and a driving circuit for testing the transistor 117 and the like are arranged in the B chamber. Since the C1 chamber, the C2 chamber, and the B chamber are separated by the partition wall 214, even if the refrigerant liquid leaks from the heating and cooling plate 134, it will not leak into the B chamber. A water leakage sensor (not shown) is arranged around the heating and cooling plate 134. In addition, a groove is formed to discharge the refrigerant liquid to the outside of the testing device if the refrigerant leaks out. An electrostatic shield plate is disposed on the partition 214 so that noise generated from the transistor 117 does not cause the drive circuit system in the chamber B to malfunction.

[0276] The current passed through the transistor 117 under test is large, at several hundred amperes, and therefore the thickness of the connection wiring 211 used is also large, so that the connection wiring 211 does not have sliding properties and is hard, and it is not easy to change the connection of the connection wiring 211.

[0277] In the semiconductor device testing apparatus of the present invention, the switch circuit board 201 can be connected by the fork plug 205 inserted from the C2 chamber. Therefore, changing the connection with the switch circuit board 201 to be used depending on the test conditions of the transistor 117 does not require changing the wiring of the connection wiring 211, but only requires changing the position of the opening 216 into which the fork plug 205 is inserted. Also, the switch circuit board 201 only requires changing the position of the connector 213 connected to the mother board 207.

[0278] 14, 15, 25, 26, 28, etc., the connection wiring 211b connected to the transistor 117 is connected to a fork plug 205c. The connection wiring 211a connected to the transistor 117 is connected to a fork plug 205e.

[0279] Even if there are a plurality of transistors 117 to be tested, the use of a single switch circuit board 201a is sufficient, because it is sufficient to cause the output current Id of the power supply circuit 121 to flow as Im to the ground line.

[0280] Switch circuit boards 201b are required in the number of transistors 117 to be tested. For example, if there are 12 transistors 117 to be tested, it is preferable to prepare 12 switch circuit boards 201b. It is also advantageous in terms of cost to make switch circuit boards 201a and switch circuit boards 201b the same specifications.

[0281] A plurality of transistors or the like are mounted on the switch circuit board 201 as the switch circuits 124. The greater the number of switch circuits 124, the smaller the impedance that shorts between the two conductive plates 204. The number of switch circuits 124b mounted on the switch circuit board 201a is determined so that the on-resistance of the switch circuit 124b is smaller than the on-resistance of the transistor 117 to be tested.

[0282] 34 and 35 show the state in which the fork plug 205 is inserted into the opening 216 of the partition wall 214. Fig. 34 is a view of the partition wall 214 as seen from the front side, and Fig. 35 is a view of the partition wall 214 as seen from the back side.

[0283] 34, fork plug 205b and multiple fork plugs 205c (fork plugs 205c1 to 205c5) are connected to conductive plate 204b, for example. Fork plug 205e1 is connected to conductive plate 204d1, fork plug 205e2 is connected to conductive plate 204d2, fork plug 205e3 is connected to conductive plate 204d3, fork plug 205e4 is connected to conductive plate 204d4, and fork plug 205e5 is connected to conductive plate 204d5.

[0284] A transistor 117 to be tested is connected between the fork plug 205c and the fork plug 205e. The number of switch circuit boards 201b corresponding to the number of transistors 117 to be tested is mounted on the mother board 207. The openings 216 are formed in correspondence with the positions of the conductor plates 204 of the switch circuit boards 201.

[0285] Although not shown, a large amount of noise is generated by turning on and off the switch circuits 124 of the switch circuit boards 201. As a countermeasure against this, a metal plate is disposed between the switch circuit boards 201 and is earthed.

[0286] In each drawing, one switch circuit 124 is shown on switch circuit board 201. However, in reality, a plurality of switch circuits 124 are arranged between conductor plates 204. By arranging a plurality of switch circuits 124 on switch circuit board 201, it is possible to short-circuit between conductor plates 204 (for example, between conductor plate 204c and conductor plate 204e) with low resistance.

[0287] Heat generated by switch circuit 124 is dissipated to conductive plate 204. A heat sink is also attached to switch circuit 124. The ground terminal of switch circuit 124 is connected to the ground of switch circuit board 201, and heat is also dissipated via the copper foil of the ground.

[0288] As shown in Fig. 15, two conductive plates 204 are attached to a switch circuit board 201, and a switch circuit 124 is arranged so as to short-circuit the two conductive plates 204. Also, Fig. 25 is an equivalent circuit diagram of the semiconductor device testing apparatus of the present invention in the first embodiment.

[0289] 14, 15, 16, etc., conductive plates 204a and 204b are attached to switch circuit board 201a. Conductive plate 204a is connected to fork plug 205a. Fork plug 205a is connected to an output terminal of power supply circuit 121. Conductive plate 204b is connected to fork plug 205b. Fork plug 205b is connected to a ground terminal of power supply circuit 121.

[0290] When the switch circuit 124b is turned on, the output terminals of the power supply circuit 121 are short-circuited, and a short-circuit current Im flows. Therefore, the output current of the power supply circuit 121 is not supplied to the transistor 117. When the switch circuit 124b is open, the output current Id of the power supply circuit 121 is supplied to the transistor 117.

[0291] Conductive plates 204c and 204d are attached to switch circuit board 201b. Conductive plate 204c is connected to fork plug 205d. Fork plug 205d is connected to an output terminal of power supply circuit 121. Conductive plate 204d is connected to fork plug 205e. Fork plug 205e is connected to the collector terminal of transistor 117 to be tested.

[0292] 15, 16, 34, 35, etc., fork plug 205e is inserted into opening 216 opened in partition wall 214 and coupled to conductive plate 204d. Also, fork plug 205c is inserted into opening 216 opened in partition wall 214 and coupled to conductive plate 204d.

[0293] A switch circuit 124a is disposed on the switch circuit board 201b, and when the switch circuit 124a is turned on, an output current Id from the power supply circuit 121 is supplied to the transistor 117 as a test current Id to be passed through the transistor 117.

[0294] The switch circuit board 201b is disposed in the B chamber of the housing 210, and the switch circuit board 201b is electrically connected to the transistor 117 to be tested by a fork plug 205 inserted from the C2 chamber through an opening 216 in the partition wall 214.

[0295] As shown in Figures 15, 16, 34, 35, etc., fork plug 205 and conductor plate 204 are connected. In Figure 16, switch circuit boards 201 are illustrated as being arranged in parallel. In reality, switch circuit boards 201 are inserted in parallel and arranged in a board rack. A mother board is arranged on the side of the board rack, and control signals to each circuit board are applied from the mother board.

[0296] Fig. 30 is an explanatory diagram of a method for testing a semiconductor device of the present invention in the first embodiment. In Fig. 30, Vgs is a gate signal applied to the gate terminal of the transistor 117 to be tested. Id is a current passed through the transistor 117 during testing. For ease of explanation, it is assumed that a constant current Id passes when the transistor 117 is on.

[0297] 30(c), St1 is a timing signal for causing a current Ic to flow through the diode Di, and when St1 is at H level, a current flows through the diode Di of the transistor 117. An operational amplifier circuit 116 acquires a terminal voltage of the diode Di, and a temperature measurement circuit 115 converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, and the control circuit board (controller) 111 tests the transistor 117 (semiconductor element 117) in accordance with the temperature information Tj.

[0298] The constant current Id is a current flowing through the transistor 117 to be tested, and is a current output from the power supply circuit 121. St1 and St2 are the time for which a measurement current is passed through a diode for temperature measurement, or the time for which the temperature is measured. FIG. 30(e) Ssa is the on / off signal of the switch circuit 124a, and FIG. 30(f) Sab is the on / off signal of the switch circuit 124b.

[0299] 30(g), Vce indicates the voltage at the c terminal of the transistor 117 (the channel voltage of the transistor 117), and the temperature information Tj indicates the measured temperature change of the transistor 117.

[0300] 30(a), a gate signal Vgs is applied from the gate driver circuit 113 to the gate terminal g of the transistor 117. The gate signal Vgs has a cycle time tcycle and an on-time ton. The cycle time tcycle and the on-time ton can be set to any value by the gate signal control circuit 112. The on-voltage Vg can also be set to any voltage.

[0301] Fig. 30(d) St2 is a timing signal for causing a current Ic to flow through the diode Dsa and the diode Dsb in the embodiment shown in Fig. 27. When St2 is at H level, a current flows through the diode Dsa or Dsb of the transistor 117. This is a case where a constant current Ic is caused to flow through a device (diode) independent of the transistor 117 to acquire temperature information Tj.

[0302] An operational amplifier circuit 116 acquires the terminal voltage of the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, which performs a test on the transistor 117 based on the temperature information Tj. Note that matters related to St2 will be described with reference to FIG. 27 etc.

[0303] For ease of understanding, the measured temperature information Tj will be described as changing between T1 and T2 as shown in Fig. 30(h). The temperature information Tj increases when a current is applied to the transistor 117, and decreases when the current is stopped. The temperature information Tj also changes with the change in the characteristics of the transistor 117.

[0304] Figure 30(e) Ssa shows the timing of the on / off control signal for the switch circuit Ssa. When Ssa is Von, the switch circuit Ssa is closed (on). When Ssa is 0, the switch circuit Ssa is open (off), and the application of current or voltage is cut off.

[0305] Figure 30(f) Ssb shows the timing of the on / off control signal for the switch circuit Ssb. When Ssb becomes Von, the switch circuit Ssb is closed (on). When Ssb is 0, the switch circuit Ssb is open (off).

[0306] 30(g), Vce is the channel voltage (voltage between the emitter terminal and the collector terminal) of the transistor 117. As the transistor 117 is turned on and off, a surge voltage and a surge current are generated, and the Vce waveform changes in a complex manner over time as the on-resistance of the transistor 117 changes. In addition, the Vce waveform of the transistor 117 changes as a result of the current Ic flowing through the diode Di.

[0307] In this specification and drawings, for ease of explanation or for ease of drawing, it is assumed that when transistor 117 is on, the voltage is Vn, and when the transistor is off, the voltage is Ve. A gate signal is applied to the gate terminal of the transistor 117 under test with a period tcycle, an on time ton and an off time toff.

[0308] For the gate signal Vgs, if the transistor 117 is an N-channel transistor, the ground voltage 0 (V) is the off voltage and Vg is the on voltage. If the transistor 117 is a P-channel transistor, the on voltage potential and the off voltage potential are changed.

[0309] During a period tn2 before the transistor 117 is turned on, the Vt voltage is set to a voltage more negative than the off voltage, and during a period tn1 after the transistor 117 is turned off, the Vt voltage is set to a voltage more negative than the off voltage. The Vt voltage is a voltage lower than 0 (V) and higher than -4 (V). Therefore, Vt is a voltage equal to or higher than -4 (V) and lower than 0 (V).

[0310] In addition, when transistor 117 is SiC, the off-voltage is set to the Vt voltage, and when transistor 117 is an IGBT, the off-voltage is set to 0 (V). As described above, the semiconductor device testing apparatus of the present invention is configured so that the off-voltage supplied to transistor 117 can be changed according to the type of transistor 117 to be tested.

[0311] When the Vt voltage is applied, St1 (St2) is set to the H level to measure the temperature of the transistor 117. While the Vt voltage is being applied, a constant current Ic is caused to flow through the diode Di. In addition, while St1 (St2) is at the H level, the constant current Ic is also caused to flow.

[0312] By applying the Vt voltage to the gate terminal of the transistor 117, the off state of the transistor 117 becomes stable, and the temperature information Tj can be stably measured. In addition, noise is less likely to be introduced during measurement of the temperature information Tj, improving the measurement accuracy of the temperature information Tj.

[0313] By applying the Vt voltage to the gate terminal of the transistor 117, the leakage current of the transistor 117 is reduced, the measurement accuracy of the Vi voltage is improved, and the measurement is stabilized.

[0314] The gate signal Vgs is set to the voltage Vt during the times tn1 and tn2. As an example, the times tn1 and tn2 are from 0.2 ms to 2 ms. The transistor 117 is turned off at 0V.

[0315] Therefore, three voltages, Vg, 0 (V), and Vt, are applied to the gate terminal g of the transistor 117. During the period in which Vt is being applied, a current is caused to flow through the diode Di of the transistor, and temperature information Tj is measured.

[0316] When the constant current Ic is made to flow through the diode Di, the switch circuit Ssa is turned off so that the current from the power supply circuit 121 is not applied to the transistor 117 .

[0317] A terminal voltage of the diode Di is obtained by passing a constant current Ic through the diode Di, and an operational amplifier circuit 116 outputs a voltage Vi corresponding to the terminal voltage. The voltage Vi is input to a temperature measurement circuit 115, which obtains temperature information Tj corresponding to the temperature of a transistor 117.

[0318] The temperature information Tj is transferred to a control circuit board (controller) 111, which controls the test of the transistor 117 (semiconductor element 117) by continuing, stopping, changing conditions, etc. of the test of the transistor 117 based on the temperature information Tj.

[0319] Fig. 30(e) Ssa is a timing signal for controlling the on / off of the switch circuit 124a, and Fig. 30(f) Ssb is a timing signal for controlling the on / off of the switch circuit 124b.

[0320] The switch circuit 124a is turned on with a delay of tm2 from when the Vgs signal of the transistor 117 becomes Vg. The time tm2 can be changed and set by the control circuit board (controller) 111.

[0321] The switch circuit 124b turns on a time tb2 before the switch circuit 124a turns on. The on state of the switch circuit 124b is maintained until tb1 after the switch circuit 124a turns on. The times tb2 and tb1 can be changed independently. In particular, the setting of tb1 is important. The time tb1 is set or changed appropriately by observing the waveform of the Vce voltage of the transistor 117.

[0322] The switch circuit 124a is turned off a time tm1 before the Vgs signal of the transistor 117 reaches Vt. The time tm1 can be changed and set by the control circuit board (controller) 111.

[0323] Switch circuit 124b turns on a time ta2 before switch circuit 124a turns off. Switch circuit 124b remains on until ta1 after switch circuit 124a turns off. The ta2 and ta1 times can be changed independently. In particular, the setting of ta1 is important. The time ta1 is set or changed appropriately by observing or measuring the waveform of the Vce voltage of the transistor 117.

[0324] When the switch circuit Ssb is turned on, the output terminal of the power supply circuit 121 is shorted to the ground (ground line), and the electric charge is discharged. As a result of the electric charge being discharged, the terminal voltage of the power supply circuit 121 becomes 0 (V) (ground voltage). In addition, the current Id output by the power supply circuit 121 is caused to flow to the ground as a current Im. Therefore, the current Id is not applied to the transistor 117, and the collector voltage of the transistor 117 does not rise.

[0325] The time tb2 is set by observing or measuring the time when the output voltage of the power supply circuit 121 becomes 0 (V) or close to 0 (V), or the time when the output voltage of the power supply circuit 121 becomes lower than the collector voltage of the transistor 117.

[0326] At the time when the above voltage relationship reaches a predetermined value (after tb2 has elapsed), the switch circuit 124a is turned on to apply the current Id from the power supply circuit 121. However, at this time, the switch circuit 124b is on, so the current Id from the power supply circuit 121 flows to the ground (ground line) as a current Im via the switch circuit 124b. Therefore, the constant current Id does not flow through the transistor 117. After the switch circuit 124 a is turned on and a time tb1 has elapsed, the switch circuit 124 b is turned off and the test current Id is supplied to the transistor 117 . The test current Id is supplied to the transistor 117 in synchronization with the switch circuit 124a as shown in FIG.

[0327] By operating the switch circuits 124a and 124b as described above, the surge voltage Vs or the inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or the inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0328] When the test current Id to the transistor 117 is stopped, the switch circuit 124b is turned on before the switch circuit 124a is turned off (ta2). The constant current Id output by the power supply circuit 121 flows to the ground as the current Im via the switch circuit Ssb and is not supplied to the transistor 117.

[0329] The time ta2 is set by observing the time when the output voltage of the power supply circuit 121 becomes 0 (V) or close to 0 (V), or the time when the output voltage of the power supply circuit 121 becomes lower than the collector voltage of the transistor 117.

[0330] When the above voltage relationship reaches a predetermined value (after ta2 has elapsed), the switch circuit 124a is turned off. After ta1 has elapsed since the switch circuit 124a was turned off, the switch circuit 124b is turned off.

[0331] By operating or controlling the switch circuits 124a and 124b as described above, the surge voltage Vs or inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0332] When the constant current Id is supplied to the transistor 117, the temperature information Tj increases. When the constant current Id to the transistor 117 is stopped, the temperature information Tj decreases. The temperature information Tj fluctuates between T1 and T2. When the characteristics of the transistor 117 fluctuate due to the test, the temperature information Tj gradually increases. In order to apply a constant current Id to the transistor 117, the power supply circuit 121 is operated to apply the current Id to the transistor 117.

[0333] 14, 25, 26, 31, 27, 28, etc., the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 can also be set. By increasing the resistance value, the rising / falling waveform of the gate signal Vgs can be changed as shown by the dotted line or the dashed-dotted line in FIG. 31(a).

[0334] By changing or setting the gate signal Vgs, the current Id flowing through the transistor 117 can also be changed as shown by the dotted line or the dashed dotted line in FIG. 31(b). By changing the rising and falling waveforms of the current Id, it is possible to adjust or suppress the surge voltage or inrush current.

[0335] As shown in Fig. 31(c), the temperature information Tj changes from a solid line to a dotted line and from a dotted line to a dashed line as the characteristics of the transistor 117 change due to the test. The test is stopped when the temperature information Tj reaches the level of Tm. Alternatively, the test is stopped when the rate of change of the temperature information Tj reaches a predetermined value. In addition, the test conditions are changed.

[0336] 32, when the switch circuit Ssa (switch circuit 124a) is in the off state, the St1 signal is set to H and temperature information Tj is measured. The St1 signal is set to H level when the gate signal is Vt. In the tn2 period, the signal is set to H level for a period tc2 and temperature information Tj is measured. In the tn1 period, temperature information Tj is measured for a period tc1.

[0337] The temperature information Tj measured during the period tc2 is the temperature information Tj at the time when the transistor 117 is cooled. The temperature information Tj measured during the period tc1 is the temperature information Tj immediately after the current Id to the transistor 117 is stopped. Stopping the test, changing the conditions, changing the control, etc. are determined based on the temperature information Tj measured during the period tc2 and the temperature information Tj measured during the period tc1.

[0338] If the rate of change of the temperature information Tj measured during the tc1 period is larger than that of the temperature information Tj measured during the tc2 period, or if the difference in absolute value between the temperature information Tj measured during the tc1 period and the temperature information Tj measured during the tc2 period is large, the test is controlled and changed in response to the measurement value temperature information Tj.

[0339] Moreover, if the temperature information Tj measured during the period tc2 differs from the standard value by a predetermined value, it is determined whether there is a problem with the connection state of the transistor 117 or the test equipment, and a decision is made to "not start the test", etc. During the period tc2 or tc1, Vi is measured multiple times, and temperature information Tj for Vi is obtained.

[0340] The embodiment of Fig. 27 is a semiconductor device testing apparatus according to the second embodiment of the present invention. A transistor 117 in Fig. 27 is provided with a diode Ds (diode Dsa, diode Dsb) for temperature measurement. The diode Ds is formed in the same process as the transistor 117.

[0341] In the embodiment of FIG. 27, temperature information Tj is measured at the timing of the St2 signal in FIG. 30(d). When the switch circuit Ssa (switch circuit 124a) is in the off state, the St2 signal is set to H and temperature information Tj is measured. In the tn2 period, the signal is set to H level during the tc2 period and temperature information Tj is measured. During the tc1 period, temperature information Tj may be measured during either the ton period or the tn1 period. The temperature information Tj measured during the tc2 period and the temperature information Tj measured during the tc1 period are averaged to obtain the temperature information Tj.

[0342] During the period tc2 or tc1, Vi is measured multiple times to obtain temperature information Tj for Vi. The operations of other signals or switch circuits in Fig. 30 are the same as or similar to those in the embodiment described with reference to Fig. 14 and the like. In the above embodiment, the temperature information Tj is measured by a diode added to or formed in the transistor 117. In the embodiment of FIG. 27, a diode Ds that is not connected (is independent) from the transistor 117 is formed.

[0343] The diode Dsa is oriented so as to pass the constant current Ic. The diode Dsb is oriented so as to pass the constant current Ic'. The constant current circuit 118 (Pc) generates the constant current Ic and the constant current Ic'.

[0344] The diodes Dsa and Dsb are diodes for measuring temperature. The structures of the diodes Dsa and Dsb are similar or identical to the diode Di in FIG.

[0345] Diode Di is connected to the terminals (terminals c and e) of transistor 117, while diodes Dsa and Dsb are not connected to the terminals of transistor 117 but are connected to independent terminals, and temperature information Tj of diode Di is measured at timing St1 in Figure 30(c), while temperature information Tj of diode Dsa and diode Dsb is measured at timing St2 in Figure 30(d). Except for this, they have the same operation or configuration.

[0346] In the embodiment of Fig. 27, the diode Ds is separated from the path through which the constant current Id flows. Even when the current Id flows through the transistor 117, the constant current Ic can be made to flow through the diode. Therefore, the time for measuring the temperature information Tj can be freely set. The positions of tc1 and tc2 can be set as shown in Fig. 30(d).

[0347] However, in tc2, as shown in Fig. 30(d), the gate signal is placed or set in the period of Vt. The temperature information Tj measured in the period tc2 is used as the value before the transistor 117 operates. The period tc1 is preferably immediately before the constant current Id of the transistor 117 is stopped. However, it may be immediately after the constant current Id is stopped. It is preferable that "immediately before" and "immediately after" are within 1 ms. St2 in FIG. 30(d) is a timing signal for causing the current Ic (or current Ic') to flow through the diode Ds (Dsa, Dsb).

[0348] When St2 is at H level, a current flows through the diode Ds (Dsa, Dsb) of the transistor 117. The operational amplifier circuit 116 acquires the terminal voltage of the diode Ds, and the temperature measurement circuit 115 converts the terminal voltage into temperature information Tj.

[0349] The temperature information Tj is sent to a control circuit board (controller) 111, which performs or stops the test of the transistor 117 or changes the control in accordance with the temperature information Tj.

[0350] When St2 is at H level, the constant current circuit 118 supplies a constant current Ic, which flows through the diode Dsa, and the constant current circuit 118 supplies a constant current Ic', which flows through the diode Dsb.

[0351] The constant current Ic and the constant current Ic' are currents of the same magnitude. However, when the threshold voltages of the diodes Dsa and Dsb are different, or when the characteristics of the diodes Dsa and Dsb are different, it is preferable to make the constant current Ic and the constant current Ic' different in magnitude.

[0352] An operational amplifier circuit 116 acquires a terminal voltage of the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, which then tests a transistor 117 based on the temperature information Tj.

[0353] The temperature information Tj obtained by passing a constant current Ic and the temperature information Tj obtained by passing a constant current Ic' are averaged or weighted to obtain a single value of temperature information Tj. Using this temperature information Tj, the control circuit board (controller) 111 performs or stops the test of the transistor 117, or changes the control. The other matters are the same as or similar to the matters or contents described in this specification and drawings, and therefore will not be described here.

[0354] It goes without saying that the present invention can be modified in various ways without departing from the spirit and scope of the present invention. It goes without saying that the matters or contents described in this specification and drawings can be combined with each other.

[0355] Fig. 28 is an explanatory diagram of a semiconductor device testing apparatus according to a third embodiment of the present invention. The difference from Fig. 14 is that a diode-connected transistor 117s is arranged in the path of a current Id to be passed through a transistor 117m to be tested. Other points are the same, so the explanation will be omitted.

[0356] As an example, the transistor 117s is a transistor having the same specifications as the transistor 117m to be tested. The gate terminal g2 and the emitter terminal e2 of the transistor 117s are connected, and the transistor 117s can be considered equivalent to a diode. The gate terminal g2 and the emitter terminal e2 of the transistor 117s are connected to the O terminal of the element terminal 226. The collector terminal c2 of the transistor 117s is connected to the P terminal of the element terminal 226.

[0357] 24, the terminals (gate terminal g2, emitter terminal e2, collector terminal c2) of the transistor 117s are connected to a connector 202b, and the connector 202b is connected to a sample connection circuit 203 by a signal wiring 222b. The terminals (gate terminal g2, emitter terminal e2, collector terminal c2) of the transistor 117s are connected in the sample connection circuit 203.

[0358] When the switch circuit 124b is turned on, a current Im flows, discharging the charge in the power supply circuit 121. Alternatively, the current Id output by the power supply circuit 121 flows to the ground via the switch circuit 124b.

[0359] When an inrush current Is flows through the transistor 117m to be tested, the transistor 117m is destroyed by the inrush current Is or the surge voltage Vs. To prevent the inrush current Is or the surge voltage Vs from occurring, the on / off control and the on / off sequence of the switch circuits 124a and 124b are controlled.

[0360] When the cycle tcycle is made faster to test the transistor 117m, it is necessary to turn on and off the switch circuits 124a and 124b at high speed. In this case, an inrush current Is or a surge voltage Vs may occur depending on the on / off timing of the switch circuit 124.

[0361] If the voltage Vm of the collector terminal of the transistor 117 is higher than the voltage Vp of the output part of the power supply circuit, the current flows toward the ground as the current Im, and no current or only a small current flows through the transistor 117m.

[0362] In order to establish the relationship Vm > Vp, in the embodiment shown in Fig. 28, a diode-connected transistor 117s is placed in the path of the current Id. When a current flows through the transistor 117s, the voltage Vm is built up by the channel voltage of the transistor 117s. Therefore, the voltage Vp is lower than the voltage Vm, and no inrush current is applied to the transistor 117m. The transistor 117m will not be destroyed by the inrush current Is or the surge voltage Vs.

[0363] 29 is an explanatory diagram of a semiconductor device testing apparatus according to a fourth embodiment of the present invention. In Fig. 29, a plurality of transistors 117 (transistors 117Q1 to 117Qn) to be tested are connected in parallel to a power supply circuit 121.

[0364] The fourth embodiment includes one switch circuit board 201a and n switch circuit boards 201b (switch circuit boards 201b1 to 201bn). The number of transistors 117Q to be tested simultaneously or sequentially is n (transistors 117Q1 to 117Qn).

[0365] The collector terminal of the transistor Q1 is connected to the fork plug 205e1, and the emitter terminal of the transistor Q1 is connected to the fork plug 205c1.

[0366] The collector terminal of the transistor Q2 is connected to the fork plug 205e2, and the emitter terminal of the transistor Q2 is connected to the fork plug 205c2.

[0367] The collector terminal of the transistor Q3 is connected to the fork plug 205e3, and the emitter terminal of the transistor Q3 is connected to the fork plug 205c3.

[0368] Similarly, the collector terminal of the transistor Qn is connected to the fork plug 205en, and the emitter terminal of the transistor Qn is connected to the fork plug 205cn.

[0369] When the switch circuit Ssa1 is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Q1. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the Vi1 voltage.

[0370] When the switch circuit Ssa2 is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Q2. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the voltage Vi2.

[0371] Similarly, when the switch circuit Ssan is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Qn. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the Vin voltage. One voltage is selected from voltages Vi 1 to Vin by selector 127 , and is output as Vi and input to temperature measurement circuit 115 .

[0372] The temperature measuring circuit 115 obtains temperature information Tj and outputs it to the control circuit board 111. In the embodiment of Fig. 29, one constant current circuit 118 is used, but this is not limited to this. A constant current circuit 118 may be provided for each transistor 117Q. Also, a temperature measuring circuit 115 may be formed or provided for each transistor 117Q. The voltage data Vi and the temperature information Tj are sent to the control circuit board 111 via the wiring of the mother board 207 .

[0373] The element terminal 226 (P terminal) of the transistor 117Q1 is connected to the connection structure 218a1, and the element terminal 226 (N terminal) of the transistor 117Q1 is connected to the connection structure 218b1.

[0374] The element terminal 226 (P terminal) of the transistor 117Q2 is connected to the connection structure 218a2, and the element terminal 226 (N terminal) of the transistor 117Q2 is connected to the connection structure 218b2.

[0375] Similarly, the element terminal 226 (P terminal) of the transistor 117Qn is connected to the connection structure 218an, and the element terminal 226 (N terminal) of the transistor 117Qn is connected to the connection structure 218bn, where n is a positive number equal to or greater than 1. The connection structure 218 is inserted from an opening 216 provided in the partition wall 217. The connection structure 218 is inserted in the direction from the C2 chamber to the C1 chamber.

[0376] The fork plug 205 is inserted into the B chamber from the C2 chamber side through an opening 216 formed in the partition wall 214. When the fork plug 205 is inserted, it is connected to the conductor plate 204 of the switch circuit board 201. The switch circuit board 201 can be selected depending on the position of the opening 216 into which the fork plug 205 is inserted.

[0377] By changing the position of the switch circuit board 201 connected to the connector 213 of the mother board 207, the switch circuit board 201 to be selected by the fork plug 205 can be selected.

[0378] Two conductive plates 204 are arranged on the switch circuit board 201. Of the two conductive plates 204, the conductive plate 204 closer to the C2 chamber and the fork plug 205 are arranged so as to be connected (in contact).

[0379] In the embodiment of the present invention, the fork plug 205 and the conductive plate 204 are electrically connected by contacting each other, but this is not limited to this. Any structure may be used as long as it can change between an electrically connected state and a non-connected state by a mechanical operation. Also, any structure may be used as long as it can stably maintain the connected state.

[0380] For example, a rotary connector, a rotary joint, a high-current connector, etc. may be used instead of the fork plug 205. A rotary connector, a rotary joint, a high-current connector, a cylindrical conductor rod, a rectangular conductor rod, a comb-shaped conductor plate, etc. may be used instead of the conductor plate 204.

[0381] FIG. 33 is an explanatory diagram of a method for testing a semiconductor device in an embodiment of the present invention, explaining the operation of FIG. 29. It is possible to perform a semiconductor test by simultaneously turning on transistors 117Q (transistors 117Q1 to 117Qn). In this case, it is necessary to pass a constant current Id through all of transistors 117Q (transistors 117Q1 to 117Qn). Therefore, if there are n transistors 117Q, power supply circuit 121 must be able to output a current of Id×n (n is a positive number equal to or greater than 1). Therefore, a large-capacity power supply circuit 121 is required.

[0382] If the test is performed by sequentially turning on the transistors 117Q and applying a constant current Id to the transistors 117Q, the constant current Id may be output from the power supply circuit 121. Fig. 33 shows an embodiment of a test method for a semiconductor element tester that performs a test by sequentially turning on the transistors 117Q. The semiconductor element changes depending on the number of times the constant current Id is turned on and off.

[0383] Therefore, by performing a test by sequentially turning on the semiconductor elements (transistor 117Q and the like) as shown in FIG. 33, the test can be performed efficiently and the maximum output current capacity of power supply circuit 121 can be reduced.

[0384] 33, the number of transistors 117Q to be turned on is described as one, but this is not limited to this. For example, multiple transistors 117Q may be turned on at the same time. In this case, the maximum value of the constant current output by the power supply circuit 121 is the number of transistors 117Q to be turned on × Id.

[0385] In addition, in the embodiment of the present invention, one power supply circuit 121 is illustrated, but the present invention is not limited to this. The power supply circuit 121 may be provided with a power supply circuit 121b separately. Furthermore, two or more power supply circuits 121 may be provided. By providing a plurality of power supply circuits 121, the current Id flowing through the transistor 117 can have various waveforms. The above also applies to the embodiments of the present invention.

[0386] As shown in Fig. 33(a), when switch circuit St1 (151s1) to switch circuit Stn (151sn) are turned on, constant currents Id1 to Idn flow through transistor 117. For example, the application time of constant current Id is ton, and constant currents Id1 and Id2 are applied to transistor 117 sequentially at an interval of time tcycle. When transistor 117 is turned on, the channel voltage of transistor 117Q changes sequentially (Fig. 33(c)).

[0387] Therefore, for example, the constant current Id1 and the constant current Id2 do not overlap in time, and therefore the output capacitance of the power supply circuit 121 may be the output capacitance required for testing one transistor 117Q.

[0388] The constant currents Id (constant currents Id1 to Idn) are controlled so as not to overlap each other. It is preferable to provide an interval of 1 μsec or more between each of the constant currents Id (constant currents Id1 to Idn). The driving method and control method described in FIG. 30 are implemented for each transistor 117Q.

[0389] The constant current Ic to be supplied to each transistor 117Q is supplied to the diode Ds of each transistor 117Q by sequentially turning on the switch circuits Ssa (Ssa1 to Ssan).

[0390] A voltage Vi (Vi1 to Vin) corresponding to the terminal voltage of diode Ds is selected by the selector 127 in synchronization with the switch circuit Ssa (Ssa1 to Ssan). For example, when a current Ic is supplied to the transistor 117Q1, the selector 127 selects the terminal voltage of the diode Ds of the transistor 117Q1. When a current Ic is supplied to the transistor 117Q3, the selector 127 selects the terminal voltage of the diode Ds of the transistor 117Q3. The selected voltage Vi is supplied to the temperature measurement circuit 115. The other configurations and operations are similar to those described in the other embodiments, and therefore the description thereof will be omitted. In the embodiment of the present invention, the transistor 117 is illustrated as an IGBT, but the present invention is not limited to this.

[0391] For example, it goes without saying that it may be an N-channel JFET (Figure 40(a)), a P-channel JFET (Figure 40(b)), an N-channel MOSFET (Figure 40(c)), a P-channel MOSFET (Figure 40(d)), an N-channel bipolar FET (Figure 40(e)), or a P-channel bipolar FET (Figure 40(f)).

[0392] Furthermore, the device is not limited to a three-terminal device, and may be a two-terminal element such as a diode shown in Fig. 40(g). A two-terminal element does not require a gate signal Vgs. It goes without saying that the semiconductor element testing apparatus and semiconductor element testing method of the present invention can be applied by testing by passing a constant current Id from the power supply circuit 121.

[0393] Furthermore, it goes without saying that the semiconductor element testing apparatus and semiconductor element testing method of the present invention are not limited to transistors and diodes, but can also be applied to other semiconductor elements such as thyristors and triacs, varistors, diacs, or modules in which transistors, diode resistors, etc. are mixed or integrated.

[0394] In the present invention, an N-channel transistor is exemplified as the semiconductor element 117, but the present invention is not limited to this. For example, it goes without saying that the present invention can be applied to a P-channel transistor as well. It goes without saying that the present invention can be applied to electrical components such as resistors (FIG. 40(i)), capacitors, coils, relays, and crystal oscillators (FIG. 40(k)) in addition to the semiconductor elements shown in FIG. 40(a) to FIG. 40(i).

[0395] In the above, the present specification has specifically described the present invention based on the embodiment, but it goes without saying that the present invention is not limited thereto and various modifications are possible without departing from the spirit of the present invention. It goes without saying that the matters or contents described in this specification and the drawings can be combined with each other.

[0396] For example, the switch circuits 124a and 124b shown in Fig. 26 can be applied to other embodiments. For example, it goes without saying that the configurations or operations of Fig. 29 and Fig. 33 can be applied to other embodiments such as Fig. 27 and Fig. 28. [Industrial Applicability]

[0397] The present invention can provide a semiconductor element testing apparatus and a semiconductor testing method that can easily change connections depending on the test content of semiconductor elements such as transistors and the number of semiconductor elements to be tested simultaneously, and that can perform testing well even if the contact resistance of the connection parts of the semiconductor elements is small and the test current is large. [Explanation of symbols]

[0398] 111 Control circuit board (controller) 112 Gate signal control circuit 113 Gate driver circuit 115 Temperature measurement circuit 116 Operational Amplifier (Buffer Amplifier) 117 Power Transistor 118 Constant current circuit 121 Constant current circuit 122 Switch Circuit 124 Switch Circuit 125 Variable Resistor Circuit 127 Selector 131 Control Rack 132 Power supply 133 Control circuit 134 Heating and cooling plate 135 Circulating Water Pipe 136 Chiller 201 Switch circuit board 202 Connector 203 Sample connection circuit 204 Conductor plate 205 Fork plug 206 connection pins 207 Motherboard 208 Connector 209 Device control circuit board 210 Cabinet 211 Connection wiring 212 Power wiring 213 Connector 214 Bulkhead 215 Bulkhead 216 Opening 217 Bulkhead 218 Connection Structure 219 Connection bolt 220 Contact part 221 Fixing screw 222 Signal wiring 223 Heat Pipe 224 Fixing screw 225 Connection Receiver 226 Element terminal 227 Cooling Fan 228 Heat dissipation fin 231 Heat pipe fittings 232 Pressure connection part 233 Connection holder 234 Recess 235 Signal Wiring 236 Spring (pressure fitting) 237 Position fixing screw 238 Screw hole 239 Spring hole 240 Positioning screw hole 251 Convex 252 Groove 301 Test Circuit Module 302 Voltage selection circuit 311 Pressing tool 312 Insulating plate 313 Pressing tool mounting plate 315 Insulation 316 Thermocouple

Claims

1. A semiconductor device testing apparatus for testing a semiconductor device having a first device terminal, a second device terminal, and a gate terminal, comprising: a power supply circuit having a first output terminal and a second output terminal for outputting a test current or a test voltage; A first switch circuit; A second switch circuit; a driver circuit that applies an off-voltage or an on-voltage to the gate terminal of the semiconductor element; a terminal voltage output circuit that outputs a voltage between the first element terminal and the second element terminal, the first switch circuit is connected to the first output terminal and the second output terminal; the second switch circuit is connected to the first output terminal and the first element terminal; the second element terminal and the second output terminal are connected; When the first switch circuit is turned on, the first output terminal and the second output terminal are short-circuited, the second switch circuit is turned on to generate a path for supplying the test current or a test current to the semiconductor element; In a first operation of starting to supply the test current or test voltage to the semiconductor device, the second switch circuit is changed from OFF to ON after a time tm2 when the voltage applied to the gate terminal by the gate driver circuit is changed from an OFF voltage to an ON voltage; the first switch circuit is changed from off to on a time tb2 before the second switch circuit is changed from off to on; the first switch circuit is changed from on to off after a time tb1 when the second switch circuit is changed from off to on; The time tb2 is set by observing or measuring the time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or the time when the voltage of the first output terminal becomes lower than the voltage of the first element terminal, The tb1 time is set by observing or measuring a waveform of a voltage between a first element terminal and a second element terminal of the semiconductor element, In a second operation of stopping the supply of the test current or the test voltage to the semiconductor device, the second switch circuit is changed from on to off at a time tm1 before the gate driver circuit changes the voltage applied to the gate terminal from an on voltage to an off voltage; the first switch circuit is changed from off to on a time ta2 before the second switch circuit is changed from on to off; After a time ta1 when the second switch circuit changes from on to off, the first switch circuit is changed from on to off; the terminal voltage output circuit outputs a voltage between a first element terminal and a second element terminal of the semiconductor element; The time ta2 is set by observing a time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or a time when the voltage of the first output terminal becomes lower than a voltage of the first element terminal; The semiconductor element testing apparatus according to claim 1, wherein the ta1 time is set by observing or measuring a waveform of a voltage between a first element terminal and a second element terminal of the semiconductor element.

2. A semiconductor device testing apparatus for testing a semiconductor device having a first device terminal, a second device terminal, and a gate terminal, comprising: a power supply circuit having a first output terminal and a second output terminal for outputting a test current or a test voltage; A first switch circuit; A second switch circuit; a driver circuit that applies a first off voltage, a second off voltage, or an on voltage to the gate terminal of the semiconductor element; a terminal voltage output circuit that outputs a voltage between the first element terminal and the second element terminal, the first off-voltage is lower than the second off-voltage, the first switch circuit is connected to the first output terminal and the second output terminal; the second switch circuit is connected to the first output terminal and the first element terminal; the second element terminal and the second output terminal are connected; When the first switch circuit is turned on, the first output terminal and the second output terminal are short-circuited, the second switch circuit is turned on to generate a path for supplying the test current or a test current to the semiconductor element; In a first operation of starting to supply the test current or test voltage to the semiconductor device, the second switch circuit is changed from OFF to ON after a time tm2 when the voltage applied to the gate terminal by the gate driver circuit is changed from an OFF voltage to an ON voltage; the first switch circuit is changed from off to on a time tb2 before the second switch circuit is changed from off to on; the first switch circuit is changed from on to off after a time tb1 when the second switch circuit is changed from off to on; The time tb2 is set by observing or measuring the time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or the time when the voltage of the first output terminal becomes lower than the voltage of the first element terminal, The tb1 time is set by observing or measuring a waveform of a voltage between a first element terminal and a second element terminal of the semiconductor element, In a second operation of stopping the supply of the test current or the test voltage to the semiconductor device, the second switch circuit is changed from on to off at a time tm1 before the gate driver circuit changes the voltage applied to the gate terminal from an on voltage to an off voltage; the first switch circuit is changed from off to on a time ta2 before the second switch circuit is changed from on to off; After a time ta1 when the second switch circuit changes from on to off, the first switch circuit is changed from on to off; applying the first off voltage to the gate terminal; the terminal voltage output circuit outputs a voltage between a first element terminal and a second element terminal of the semiconductor element; The time ta2 is set by observing a time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or a time when the voltage of the first output terminal becomes lower than a voltage of the first element terminal; The semiconductor element testing apparatus according to claim 1, wherein the ta1 time is set by observing or measuring a waveform of a voltage between a first element terminal and a second element terminal of the semiconductor element.

3. A semiconductor device testing apparatus for testing a semiconductor device having a first device terminal, a second device terminal, a third device terminal, a fourth device terminal, and a gate terminal, comprising: a power supply circuit having a first output terminal and a second output terminal for outputting a test current or a test voltage; A first switch circuit; A second switch circuit; a driver circuit that applies an off-voltage or an on-voltage to the gate terminal of the semiconductor element; a terminal voltage output circuit that outputs a voltage between the third element terminal and the fourth element terminal, a diode element is formed or disposed between the third element terminal and the fourth element terminal; the first switch circuit is connected to the first output terminal and the second output terminal; the second switch circuit is connected to the first output terminal and the first element terminal; the second element terminal and the second output terminal are connected; When the first switch circuit is turned on, the first output terminal and the second output terminal are short-circuited, the second switch circuit is turned on to generate a path for supplying the test current or a test current to the semiconductor element; In a first operation of starting to supply the test current or test voltage to the semiconductor device, the second switch circuit is changed from OFF to ON after a time tm2 when the voltage applied to the gate terminal by the gate driver circuit is changed from an OFF voltage to an ON voltage; the first switch circuit is changed from off to on a time tb2 before the second switch circuit is changed from off to on; the first switch circuit is changed from on to off after a time tb1 when the second switch circuit is changed from off to on; The time tb2 is set by observing or measuring the time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or the time when the voltage of the first output terminal becomes lower than the voltage of the first element terminal, The tb1 time is set by observing or measuring a waveform of a voltage between a first element terminal and a second element terminal of the semiconductor element, In a second operation of stopping the supply of the test current or the test voltage to the semiconductor device, the second switch circuit is changed from on to off at a time tm1 before the gate driver circuit changes the voltage applied to the gate terminal from an on voltage to an off voltage; the first switch circuit is changed from off to on a time ta2 before the second switch circuit is changed from on to off; After a time ta1 when the second switch circuit changes from on to off, the first switch circuit is changed from on to off; The time ta2 is set by observing a time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or a time when the voltage of the first output terminal becomes lower than a voltage of the first element terminal; The ta1 time is set by observing or measuring a waveform of a voltage between the first element terminal and the second element terminal of the semiconductor element, a constant current is applied to the diode element, and the terminal voltage output circuit outputs a voltage between the third element terminal and the fourth element terminal.

4. A semiconductor device testing apparatus for testing a semiconductor device having a first device terminal, a second device terminal, and a gate terminal, comprising: a power supply circuit having a first output terminal and a second output terminal for outputting a test current or a test voltage; A first switch circuit; A second switch circuit; a driver circuit that applies an off-voltage or an on-voltage to the gate terminal of the semiconductor element; a terminal voltage output circuit that outputs a voltage between the first element terminal and the second element terminal; A constant current circuit is provided to apply a constant current, a diode element is formed or disposed between the first element terminal and the second element terminal; the first switch circuit is connected to the first output terminal and the second output terminal; the second switch circuit is connected to the first output terminal and the first element terminal; the second element terminal and the second output terminal are connected; When the first switch circuit is turned on, the first output terminal and the second output terminal are short-circuited, the second switch circuit is turned on to generate a path for supplying the test current or a test current to the semiconductor element; In a first operation of starting to supply the test current or test voltage to the semiconductor device, the second switch circuit is changed from OFF to ON after a time tm2 when the voltage applied to the gate terminal by the gate driver circuit is changed from an OFF voltage to an ON voltage; the first switch circuit is changed from off to on a time tb2 before the second switch circuit is changed from off to on; the first switch circuit is changed from on to off after a time tb1 when the second switch circuit is changed from off to on; The time tb2 is set by observing or measuring the time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or the time when the voltage of the first output terminal becomes lower than the voltage of the first element terminal, The tb1 time is set by observing or measuring a waveform of a voltage between a first element terminal and a second element terminal of the semiconductor element, In a second operation of stopping the supply of the test current or the test voltage to the semiconductor device, the second switch circuit is changed from on to off at a time tm1 before the gate driver circuit changes the voltage applied to the gate terminal from an on voltage to an off voltage; the first switch circuit is changed from off to on a time ta2 before the second switch circuit is changed from on to off; After a time ta1 when the second switch circuit changes from on to off, the first switch circuit is changed from on to off; during a period in which the second switch circuit is turned off, the constant current circuit applies the constant current between the first element terminal and the second element terminal; the terminal voltage output circuit outputs a voltage between a first element terminal and a second element terminal of the semiconductor element; The time ta2 is set by observing a time when the voltage of the first output terminal becomes 0 (V) or close to 0 (V), or a time when the voltage of the first output terminal becomes lower than a voltage of the first element terminal; The semiconductor element testing apparatus according to claim 1, wherein the ta1 time is set by observing or measuring a waveform of a voltage between a first element terminal and a second element terminal of the semiconductor element.

5. 5. The semiconductor device testing apparatus according to claim 1, 2, 3 or 4, wherein the time ta1 and the time ta2 can be set independently.

6. the first switch circuit is disposed on a first switch circuit board; the second switch circuit is disposed on a second switch circuit board; a first conductor plate and a second conductor plate are disposed on the first switch circuit board; a third conductor plate and a fourth conductor plate are disposed on the second switch circuit board; the first switch circuit is connected to the first conductor plate and the second conductor plate; 5. The semiconductor device testing apparatus according to claim 1, wherein the second switch circuit is connected to the third conductor plate and the fourth conductor plate.

7. the first element terminal and the second element terminal are disposed or formed on a first end or end surface of the semiconductor element; the gate terminal is disposed or formed on a second end or end surface located opposite the first end or end surface; 5. The semiconductor device testing apparatus according to claim 1, 2, 3 or 4, wherein the semiconductor device is attached to a plate for adjusting a temperature.

8. The voltage output by the terminal voltage output circuit 5. The semiconductor device testing apparatus according to claim 1, 2, 3 or 4, further comprising the step of stopping the test of the semiconductor device, changing a control method, or changing test conditions.

9. A first chamber and a second chamber are provided. the semiconductor element is disposed in the first chamber; the first switch circuit and the second switch circuit are disposed in the second chamber; 5. The semiconductor device testing apparatus according to claim 1, 2, 3 or 4, wherein dry air is injected into the first chamber.

10. Further comprising a temperature adjusting plate and a water leakage sensor; A circulating water pipe is connected to the plate, The semiconductor element is disposed on the plate; 5. The semiconductor device testing apparatus according to claim 1, wherein the water leakage sensor detects leakage of the circulating water in the circulating water pipe and stops the test or issues an alarm.

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