Display device

Abstract

To provide a display device in a new configuration.SOLUTION: A display device includes: a first board in which multiple pixels having a display element are provided; and a second board having a first conductive layer in which first multiple openings are provided. The first conductive layer has an antenna function capable of transmitting and receiving a radio signal. The pixels and the first openings have a mutually overlapped area. The second board has an element layer. The element layer has transistors. The transistors have a function of an amplifier capable of amplifying a radio signal. The transistors have semiconductor layers having a metal oxide in channel formation regions each. The metal oxide contains In, Ga, and Zn.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] This specification describes a display device and the like.

[0002] In addition, in this specification, the display device refers to any device having a display function. [Background technology]

[0003] With the development of information technology such as IoT (Internet of Things), the amount of data being transmitted and received is increasing. In order to accommodate this increase in data volume, a new communication standard called the fifth generation mobile communication system (5G) is being considered, which will achieve faster communication speeds, more simultaneous connections, and shorter latency than the fourth generation mobile communication system (4G) (see, for example, Patent Document 1). In Japan, 5G will use communication frequencies in the 3.7 GHz, 4.5 GHz, and 28 GHz bands.

[0004] As communication frequencies become higher, the amount of information that can be sent and received increases, but the communication distance becomes shorter. To address the shorter communication distance, beamforming technology using antennas arranged in an array is effective. For example, in Japan, a configuration in which antennas are arranged at intervals of about 5 mm, half the wavelength of the communication frequency, is effective. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2017 / 026590 Summary of the Invention [Problem to be solved by the invention]

[0006] Display devices such as smartphones that perform mobile communications require miniaturization of integrated circuits (ICs) including antennas. Arranging multiple antennas in electronic devices that perform mobile communications in accordance with 5G communications standards means a trade-off with the demand for miniaturized integrated circuits. It was difficult to achieve both a configuration that arranges antennas at equal intervals and a configuration that miniaturizes integrated circuits.

[0007] An object of one embodiment of the present invention is to provide a novel display device or the like. Another object of one embodiment of the present invention is to provide a display device or the like having a novel structure that can achieve both a structure in which antennas are arranged side by side and a structure in which integrated circuits are miniaturized.

[0008] The description of multiple problems does not preclude the existence of each problem. One embodiment of the present invention does not need to solve all of the problems exemplified. In addition, problems other than those listed will become apparent from the description of this specification, and such problems may also be problems of one embodiment of the present invention. [Means for solving the problem]

[0009] One embodiment of the present invention is a display device that includes a first substrate having a plurality of pixels each having a display element, and a second substrate having a first conductive layer in which a plurality of first openings are provided, the first conductive layer having a function of an antenna capable of transmitting and receiving wireless signals, and the pixels and the first openings having overlapping regions.

[0010] One embodiment of the present invention is a display device that includes a first substrate having a plurality of pixels each having a display element, a first conductive layer having a plurality of first openings, and a second substrate having an element layer each having a transistor, in which the first conductive layer functions as an antenna capable of transmitting and receiving a radio signal, the transistor functions as an amplifier capable of amplifying the radio signal, and the pixels and the first openings have overlapping regions.

[0011] One embodiment of the present invention is a display device that includes a first substrate having a plurality of pixels each having a display element, a first conductive layer having a plurality of first openings, a second conductive layer having a plurality of second openings, and an element layer having a transistor, in which the first conductive layer functions as an antenna capable of transmitting and receiving a wireless signal, the transistor functions as an amplifier capable of amplifying the wireless signal, and the pixel, the first opening, and the second opening have overlapping regions.

[0012] In one embodiment of the present invention, the second conductive layer preferably functions as an electrode of a touch sensor.

[0013] In one embodiment of the present invention, the display device preferably includes a transistor having a semiconductor layer including a metal oxide in a channel formation region.

[0014] In one embodiment of the present invention, the metal oxide preferably contains In, Ga, and Zn.

[0015] In one embodiment of the present invention, the display device preferably has a region where the transistor and the first conductive layer overlap each other.

[0016] In one embodiment of the present invention, a display device is preferred in which the first conductive layer has a third conductive layer having a function of an antenna capable of transmitting and receiving a first wireless signal, and a fourth conductive layer having a function of an antenna capable of transmitting and receiving a second wireless signal, and the shape of the third conductive layer is different from the shape of the fourth conductive layer.

[0017] In one embodiment of the present invention, the second substrate is preferably a glass substrate.

[0018] In one embodiment of the present invention, the second substrate is preferably a flexible substrate in the display device.

[0019] Other aspects of the present invention will be described in the following embodiment and in the drawings. Effect of the Invention

[0020] One embodiment of the present invention can provide a novel display device or the like. Alternatively, one embodiment of the present invention can provide a display device or the like with a novel structure in which both a structure in which antennas are arranged side by side and a structure in which integrated circuits are miniaturized can be achieved.

[0021] The description of multiple effects does not preclude the existence of other effects. In addition, one embodiment of the present invention does not necessarily have all of the exemplified effects. In addition, problems, effects, and novel features other than those described above regarding one embodiment of the present invention will become apparent from the description and drawings in this specification. [Brief description of the drawings]

[0022] [Figure 1] 1A and 1B are diagrams illustrating a configuration example of a display device. [Diagram 2] 2A and 2B are diagrams illustrating a configuration example of a display device. [Diagram 3] 3A and 3B are diagrams illustrating a configuration example of a display device. [Figure 4] 4A and 4B are diagrams illustrating a configuration example of a display device. [Diagram 5] 5A to 5F are diagrams illustrating a configuration example of a display device. [Figure 6] 6A and 6B are diagrams illustrating a configuration example of a display device. [Figure 7] 7A and 7B are diagrams illustrating a configuration example of a display device. [Figure 8] 8A to 8G are diagrams illustrating configuration examples of a display device. [Figure 9] FIG. 9 is a diagram illustrating a configuration example of a display device. [Figure 10] 10A to 10E are diagrams illustrating configuration examples of a display device. [Figure 11] 11A and 11B are diagrams showing configuration examples of an electronic device. [Figure 12] FIG. 12 is a diagram illustrating an example of the configuration of an integrated circuit. [Figure 13] FIG. 13 is a diagram illustrating an example of the configuration of a display device. [Figure 14] 14A and 14B are diagrams illustrating a configuration example of a display device. [Figure 15] 15A and 15B are diagrams illustrating a configuration example of a display device. [Figure 16] 16A and 16B are diagrams illustrating a configuration example of a display device. [Figure 17] 17A and 17B are diagrams illustrating a configuration example of a display device. [Figure 18] FIG. 18 is a diagram illustrating a configuration example of a display device. [Figure 19] 19A to 19C are diagrams illustrating a configuration example of a display device. [Figure 20] FIG. 20 is a diagram illustrating a configuration example of a display device. [Figure 21] 21A to 21F are diagrams for explaining configuration examples of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] The following describes an embodiment of the present invention. However, one embodiment of the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the embodiment and details can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, one embodiment of the present invention should not be interpreted as being limited to the description of the embodiment shown below.

[0024] In this specification, the ordinal numbers "first," "second," and "third" are used to avoid confusion of components. Therefore, they do not limit the number of components. Furthermore, they do not limit the order of the components. For example, a component referred to as "first" in one embodiment of this specification may be a component referred to as "second" in another embodiment or in the claims. For example, a component referred to as "first" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0025] In the drawings, the same elements or elements having similar functions, elements made of the same material, or elements formed at the same time may be given the same reference numerals, and repeated description thereof may be omitted.

[0026] In this specification, for example, the power supply potential VDD may be abbreviated to potential VDD, VDD, etc. This also applies to other components (for example, signals, voltages, circuits, elements, electrodes, wiring, etc.).

[0027] Furthermore, when the same reference symbol is used for multiple elements, particularly when it is necessary to distinguish between them, identification symbols such as “_1”, “_2”, "[n]”, "[m,n]”, etc. may be added to the reference symbol. For example, the second wiring GL is written as wiring GL[2].

[0028] (Embodiment 1) A structural example of a display device which is one embodiment of the present invention will be described with reference to FIGS. 1A to 10E. FIG.

[0029] In this specification, a display device having a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) attached to a substrate constituting the display device, or a display device having an IC (Integrated Circuit) directly mounted on a substrate constituting the display device using the COG (Chip On Glass) method, may be referred to as a display device or a display module.

[0030] 1A is a schematic diagram illustrating the appearance of a display device 100 according to one embodiment of the present invention. The display device according to one embodiment of the present invention has a structure in which a display element and a conductive layer constituting an antenna are provided between a pair of substrates. The display device according to one embodiment of the present invention can realize an arrangement of a plurality of antennas superimposed on a display portion.

[0031] The display device 100 includes a substrate 110 on which a display element is provided, and a substrate 120 on which a conductive layer is provided. The substrate 110 includes an FPC 112 to which signals for display and the like are input. The substrate 120 includes an FPC 122 for transmitting and receiving signals.

[0032] The substrate 120 has a conductive layer processed into a desired shape. The conductive layer functions as an antenna 130. Each conductive layer preferably has an opening. The opening and the display element are arranged to overlap with each other. In this way, light from the display element is emitted to the outside through the opening, so that the conductive layer functioning as an antenna does not need to be light-transmitting. That is, a material such as a metal or alloy having lower resistance than a light-transmitting conductive material can be used as a material for the conductive layer functioning as an antenna. Therefore, the antenna can transmit and receive wireless signals as an antenna with reduced influence of wiring resistance and the like.

[0033] In addition, since a low-resistance material can be used for the conductive layer, the line width can be made extremely small. That is, the surface area of ​​the conductive layer when viewed from the display surface side (planar view) can be made small. As a result, the influence of noise generated when the pixel is driven can be suppressed. Furthermore, even if the conductive layer functioning as an antenna and the display element constituting the pixel are arranged closely between two substrates, the influence of noise can be suppressed. Therefore, the thickness of the display device can be reduced. In particular, by using a flexible material for the pair of substrates, a thin, lightweight and flexible display device can be realized.

[0034] The conductive layer provided on the substrate 120 has a mesh-like shape with a plurality of openings. The material of the conductive layer used in the antenna 130 is preferably one with low resistance. As an example, metals such as silver, copper, and aluminum may be used. Furthermore, metal nanowires that are very thin (for example, with a diameter of several nanometers) and are configured using a large number of conductors may be used. As an example, Ag nanowires, Cu nanowires, and Al nanowires may be used. In the case of Ag nanowires, for example, a light transmittance of 89% or more and a sheet resistance value of 40Ω / □ or more and 100Ω / □ or less can be realized. Note that such metal nanowires have high transmittance, so the metal nanowires may be used for electrodes used in a display element, such as pixel electrodes and common electrodes. Alternatively, carbon nanotubes may be used as the material of the conductive layer used in the antenna 130.

[0035] FIG. 1B is a schematic diagram illustrating a configuration of the substrate 110 side in the display device 100 of one embodiment of the present invention. The substrate 110 has a display portion 111. The display portion 111 has a plurality of pixels 116 arranged in a matrix. The pixels 116 preferably have a plurality of subpixels. Each of the subpixels includes a display element. A circuit 115 electrically connected to the pixels 116 in the display portion 111 is provided over the substrate 110. The circuit 115 can be a circuit that functions as a gate driver circuit, for example. The FPC 112 has a function of supplying a signal from the outside to at least one of the display portion 111 or the circuit 115 through a wiring 114. Note that an IC 113 that functions as a source driver circuit is preferably mounted on the substrate 110 or the FPC 112. The IC 113 can be mounted on the substrate 110 by a COG method or a chip on film (COF) method.

[0036] Display elements that can be used in the display device include liquid crystal elements, organic EL elements, inorganic EL elements, LED elements, microcapsules, electrophoretic elements, electrowetting elements, electrofluidic elements, electrochromic elements, MEMS elements, and the like.

[0037] Also, a touch panel having a touch sensor function can be used as the display device. In that case, the IC 113 may have a configuration including a touch sensor controller, a sensor driver, and the like. The touch panel is preferably an on-cell type touch panel in which the display device and the touch sensor are integrated, or an in-cell type touch panel. The on-cell type or in-cell type touch panel can be made thin and lightweight. Furthermore, the on-cell type or in-cell type touch panel can reduce the number of parts, thereby reducing costs. The touch panel can employ an optical or capacitive touch sensor.

[0038] 2A is a schematic diagram illustrating a structure of the substrate 120 side in the display device 100 of one embodiment of the present invention. The substrate 120 has a conductive layer processed into a desired shape. The processed conductive layer functions as an antenna. As illustrated in FIG. 2A, a plurality of antennas 130_1 to 130_N can be provided on the substrate. The FPC 122 functions as wiring for electrically connecting the plurality of antennas 130_1 to 130_N to an integrated circuit 141 provided on the substrate 140.

[0039] In one embodiment of the present invention, the antennas 130_1 to 130_N can be arranged on the substrate 120. A plurality of the antennas 130_1 to 130_N can be arranged in a region equivalent to the display portion 111 having the pixels 116. A plurality of the antennas 130_1 to 130_N can be arranged in a region over the entire surface of the substrate 120, which is larger than the region of the substrate 140. Since a plurality of the antennas 130_1 to 130_N can be arranged in a region, antennas having different shapes or sizes can be arranged in a region. Furthermore, since the antennas can be provided in a region that is a display portion, a display device can be provided that can achieve both a structure in which a plurality of antennas are arranged in a region and a structure in which an integrated circuit is miniaturized.

[0040] Since antennas of different shapes or sizes can be arranged, it is possible to configure the system to transmit and receive radio signals of different frequencies. In addition, since multiple antennas of the same shape and size can be arranged, beamforming technology can be applied to antennas arranged in an array. Since beamforming technology can provide antenna directionality, it is possible to compensate for radio wave propagation loss when the communication frequency becomes high.

[0041] The antennas 130_1 to 130_N are effectively arranged, for example, at intervals of 1 / 2 wavelength of the communication frequency, for example, about 5 mm. A conductive layer that does not function as an antenna is preferably arranged between the antennas 130_1 to 130_N. By arranging a conductive layer that does not function as an antenna between adjacent antennas, the coverage of a thin film formed after the conductive layer formation process can be improved and the surface can be flattened. Furthermore, by making the thickness of a layer including a conductive layer uniform, the luminance unevenness of light from pixels that transmit through the conductive layer can be reduced, and a display device with improved display quality can be realized. The conductive layer that does not function as an antenna may be used as an electrode of a touch sensor. Since the frequency of a signal used in a touch sensor is different from the frequency of a signal used in wireless communication, the signals can be separated.

[0042] FIG. 2B illustrates the multiple antennas 130_1 to 130_N illustrated in FIG. 2A, as well as an integrated circuit 141 and a baseband processor 12.

[0043] The integrated circuit 141 has a function of performing modulation or demodulation processing on data of radio signals transmitted and received by the antennas 130_1 to 130_N. Specifically, the integrated circuit 141 has a function of modulating transmission data received from the baseband processor 12 with a carrier wave to generate a transmission signal, and outputting the transmission signal via the antennas 130_1 to 130_N. The integrated circuit 141 also has a function of receiving a reception signal via the antennas 130_1 to 130_N, demodulating the reception signal with a carrier wave to generate reception data, and transmitting the reception data to the baseband processor 12. The integrated circuit 141 may also include a duplexer connected to each of the antennas 130_1 to 130_N.

[0044] The baseband processor 12 has a function of performing baseband processing including encoding (e.g., error correction encoding) processing or decoding processing on data transmitted to and received from external devices via the antennas 130_1 to 130_N. Specifically, the baseband processor 12 has a function of receiving transmission data from the application processor, encoding the received transmission data, and transmitting the data to the integrated circuit 141. The baseband processor 12 also has a function of receiving reception data from the integrated circuit 141, decoding the received reception data, and transmitting the data to the application processor.

[0045] 3A illustrates a layout diagram of conductive layers 131A to 131D applicable to the antennas 130_1 to 130_N described in FIG. 2A and a conductive layer 132 provided between the antennas. The conductive layers 131A to 131D illustrate an opening 133A for transmitting pixel light. The conductive layer 132 illustrates an opening 133B for transmitting pixel light.

[0046] The conductive layers 131A to 131D functioning as antennas are provided apart from the conductive layer 132 not functioning as an antenna. The openings 133A and 133B are provided in a region overlapping with pixels of the display portion. With this structure, light from the display element is emitted to the outside through the openings 133A and 133B, so the conductive layers 131A to 131D do not need to have light-transmitting properties. In other words, a material such as a metal or an alloy that has lower resistance than a light-transmitting conductive material can be used as a material for the conductive layer functioning as an antenna.

[0047] Fig. 3B is a schematic diagram in which the layout diagram described in Fig. 3A is expressed in a block diagram for each region. In Fig. 3B, conductive layers 131A to 131D and a conductive layer 132 are illustrated, similarly to Fig. 3A.

[0048] As shown in Figures 3A and 3B, by regularly arranging conductive layers that function as antennas with conductive layers that do not function as antennas sandwiched between them, it is possible to arrange the antennas at intervals of, for example, 1 / 2 the wavelength of the communication frequency, for example, about 5 mm. Therefore, beamforming technology can be applied to antennas arranged in an array. Since beamforming technology can provide antenna directionality, it is possible to compensate for radio wave propagation loss when the communication frequency becomes high.

[0049] 3A and 3B, the conductive layers functioning as antennas are regularly arranged with conductive layers not functioning as antennas sandwiched therebetween, thereby improving the coverage of a thin film formed after the conductive layer forming process and flattening the surface. Furthermore, the thickness of the layer including the conductive layer is made uniform, thereby reducing the luminance unevenness of light from pixels passing through the conductive layer, and a display device with improved display quality can be realized. Note that, although the conductive layers 131A to 131D are regularly arranged in a square shape in the example shown in FIG. 3A and FIG. 3B, the conductive layers 131A to 131D may be arranged in a circular, triangular, pentagonal, hexagonal, octagonal, or other shape.

[0050] Fig. 4A shows a schematic diagram in which the conductive layer functioning as an antenna has different sizes, similar to the block diagram shown in Fig. 3B, and Fig. 4B shows a schematic diagram illustrating a conductive layer that does not function as an antenna in addition to the conductive layer functioning as an antenna shown in Fig. 4A.

[0051] In Fig. 4A, conductive layers 131P, 131Q, and 131R are illustrated as conductive layers of different sizes that function as antennas on a substrate 120. In Fig. 4B, in addition to the configuration illustrated in Fig. 4A, a conductive layer 132 is illustrated.

[0052] As shown in Fig. 4B, by regularly arranging the conductive layers functioning as antennas with conductive layers not functioning as antennas sandwiched between them, it is possible to apply beamforming technology using antennas arranged in an array. Also, as shown in Fig. 4B, by regularly arranging the conductive layers functioning as antennas with conductive layers not functioning as antennas sandwiched between them, it is possible to prevent the formation of thin portions of the conductive layers. Therefore, it is possible to improve the coverage of the thin film formed after the conductive layer formation process and flatten the surface.

[0053] 5A to 5F will describe a configuration example of the conductive layer 131 which can be applied to the conductive layers 131A to 131D functioning as antennas shown in FIG. 3A.

[0054] In Fig. 3A, the conductive layer functioning as an antenna has a rectangular opening in a rectangular conductive layer in a plan view, but is not limited thereto. For example, as shown in Fig. 5A, a conductive layer 131 may have an opening 133 and a notch 134.

[0055] Alternatively, as shown in FIG. 5B, for example, conductive layer 131 may have openings 133A and 133B of different sizes.

[0056] As another configuration, for example, as shown in FIG. 5C, conductive layer 131 may have a cutout portion 134 in addition to openings 133A and 133B of different sizes.

[0057] As another configuration, for example, as shown in FIG. 5D, conductive layer 131 may have protrusions 135 in addition to openings 133.

[0058] As another configuration, for example, as shown in FIG. 5E, conductive layer 131 may have a plurality of openings 133A and 133B each having a different size.

[0059] As another configuration, for example, as shown in Fig. 5F, conductive layer 131 may have opening 133C with rounded corners. Also, as shown in Fig. 5F, the corners of conductive layer 131 may be rounded.

[0060] 6A, an element layer overlapping with a conductive layer 131 having an opening 133, which functions as an antenna, will be described with reference to the drawing. As illustrated in FIG. 6A, an element layer 161 having a transistor overlaps with the conductive layer 131. The opening 133 overlaps with an opening 162 of the element layer 161 and the pixel 116. Light emitted from the pixel 116 (shown by a dashed arrow in FIG. 6A) passes through the opening 162 and the opening 133.

[0061] 6B is a diagram for illustrating an overlap between a transistor and the conductive layer 131 in a plan view of a region 160 where the conductive layer 131 and the element layer 161 illustrated in FIG. 6A overlap. FIG. 6B illustrates a plurality of transistors 164 connected to a wiring 163 included in the element layer 161. By providing the element layer 161 including the transistor 164 in a region overlapping with the conductive layer 131 as illustrated in FIG. 6B, a part of the circuit included in the integrated circuit 141 described in FIG. 2A and FIG. 2B can be provided in the element layer 161.

[0062] Specifically, the integrated circuit 141 that can be provided in the element layer 161 can be configured with a transistor 164 including a duplexer, an amplifier, a mixer, or the like in the element layer 161. Compared to a configuration in which only an antenna is provided on the substrate 120 side, an amplified signal is input to and output from the substrate 140 including the integrated circuit 141 via the FPC 122, so that stable operation can be achieved.

[0063] The transistors included in the element layer 161 are preferably configured to include transistors having an oxide semiconductor (metal oxide) in a channel formation region (hereinafter referred to as OS transistors). OS transistors can be freely arranged on an element layer having a transistor whose channel formation region includes silicon (hereinafter referred to as Si transistors) or on an element layer having an OS transistor, and therefore can be easily integrated. In addition, OS transistors can be manufactured at low cost because they can be manufactured using the same manufacturing equipment as Si transistors.

[0064] The metal oxide may be an In-M-Zn oxide (wherein element M is one or more selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc.). For example, a metal oxide having indium, zinc, and gallium (In-Ga-Zn oxide), a metal oxide having indium, zinc, and tin (In-Sn-Zn oxide), or a metal oxide having indium, zinc, gallium, and tin (In-Ga-Zn-Sn oxide) may be preferably used.

[0065] The metal oxide functioning as an oxide semiconductor may be formed by a sputtering method or an ALD (Atomic Layer Deposition) method.

[0066] 7A corresponds to a configuration in which an amplifier 142 is illustrated in addition to the configuration in the block diagram illustrated in FIG. 2B. In addition to the antennas 130_1 to 130_N, the amplifier 142 is provided on the substrate 120 side using a transistor 164 or the like provided in the element layer 161, whereby the circuit of the integrated circuit 141 on the substrate 140 side can be miniaturized.

[0067] 7B corresponds to a configuration in which a duplexer DUP is illustrated in addition to the configuration in the block diagram illustrated in FIG. 7A. In addition to the antennas 130_1 to 130_N and the amplifier 142, the amplifier 142 and the duplexer DUP are provided on the substrate 120 side using the transistor 164 provided in the element layer 161, and thus the circuit of the integrated circuit 141 on the substrate 140 side can be miniaturized.

[0068] 8A to 8G, 9, and 10A to 10E are schematic diagrams showing the positional relationship between pixels, sub-pixels included in the pixels, and the conductive layer 131 when viewed from the display surface side.

[0069] 8A shows an example in which pixel 116 is composed of three subpixels: subpixel 33R, subpixel 33G, and subpixel 33B. For example, subpixel 33R may have a function of displaying red, subpixel 33G may have a function of displaying green, and subpixel 33B may have a function of displaying blue. Note that the number of subpixels included in pixel 116 and the types of colors of the subpixels are not limited to this.

[0070] Each of the sub-pixels included in the pixel 116 includes a display element. Representative examples of the display element include a light-emitting element such as an organic EL element, a liquid crystal element, a display element (also called electronic ink) that displays using an electrophoretic method or an electronic liquid powder (registered trademark) method, a shutter-type MEMS display element, and an optical interference-type MEMS display element. In addition to the display element, the sub-pixel may also include a transistor, a capacitance element, and wiring that electrically connects these elements. Furthermore, a light-receiving element (e.g., a light-receiving element using an organic photodiode) may be provided in one of the sub-pixels, and the light emitted from the other sub-pixels may be received by the light-receiving element, thereby providing the display device with an additional function such as an imaging function or a sensing function.

[0071] The positional relationship between the subpixels and the conductive layer 131 can also be applied to transmissive liquid crystal displays, semi-transmissive liquid crystal displays, reflective liquid crystal displays, direct-view liquid crystal displays, and the like. When realizing a semi-transmissive liquid crystal display or a reflective liquid crystal display, a part or all of the pixel electrodes may function as a reflective electrode. For example, a part or all of the pixel electrodes may be made of aluminum, silver, or the like. In that case, a memory circuit such as an SRAM may be provided under the reflective electrode. This can further reduce power consumption. Also, a configuration suitable for the display element to be applied may be selected from various pixel circuits and used.

[0072] 8A, one opening 133 of the conductive layer 131 and three sub-pixels, sub-pixel 33R, sub-pixel 33G, and sub-pixel 33B, are arranged to overlap one another. In this manner, it is preferable that the opening 133 of the conductive layer 131 is arranged to overlap one pixel 116. In other words, it is preferable that the interval at which the pixels 116 are arranged matches the interval of the lattice of the conductive layer 131. With this configuration, the structure of the periphery of each pixel 116 (for example, the film configuration of the pixel and its periphery, the thickness of the film that constitutes it, or the uneven shape of the surface) can be made the same, thereby suppressing the occurrence of display unevenness.

[0073] For example, as shown in FIG. 9, two or more pixels 116 and one opening 133 may overlap each other.

[0074] 8B shows an example in which one opening 133 and one subpixel are arranged to overlap each other. By adopting such a configuration in which the conductive layer 131 is arranged between two subpixels included in one pixel 116 in a plan view, the wiring resistance of the conductive layer 131 can be reduced. As a result, the receiving sensitivity of the antenna can be improved.

[0075] 8C shows an example in which pixel 116 further includes sub-pixel 33Y in comparison with the configuration shown in FIG. 8A. Sub-pixel 33Y can be, for example, a pixel capable of displaying yellow. Note that a pixel capable of displaying white can also be used in place of sub-pixel 33Y. By providing pixel 116 with sub-pixels of more than three colors in this way, power consumption can be reduced.

[0076] 8D shows an example in which one opening 133 and one subpixel are arranged to overlap each other. That is, an example in which the conductive layer 131 is arranged between two subpixels adjacent to each other in a plan view is shown. Although not shown, a configuration in which two of the four subpixels are arranged to overlap one opening 133 may also be used.

[0077] Although Fig. 8A to Fig. 8D show an example in which the sub-pixels are arranged in stripes, it is also possible to use a configuration in which two color sub-pixels are arranged alternately in one direction, as shown in Fig. 8E to Fig. 8G. Fig. 8E shows a configuration in which a pixel 116 having four sub-pixels overlaps with one opening 133. Fig. 8F shows a configuration in which two adjacent sub-pixels overlap with one opening 133. Fig. 8G shows a configuration in which one sub-pixel overlaps with one opening 133.

[0078] The size of each subpixel (e.g., the area of ​​the region that contributes to display) of the pixel 116 may be different for each subpixel. For example, the subpixel representing blue, which has a relatively low luminosity factor, may be large, and the subpixel representing green or red, which has a relatively high luminosity factor, may be small.

[0079] 10A and 10B show an example in which subpixel 33B is larger than the other subpixels among subpixels 33R, 33G, and 33B. Here, an example in which subpixels 33R and 33G are arranged alternately is shown, but it is also possible to arrange the three subpixels in a striped pattern with different sizes, as shown in FIG. 8A etc.

[0080] Fig. 10A shows a configuration in which a pixel 116 having three subpixels overlaps with one opening 133. Fig. 10B shows a configuration in which one opening 133 overlaps with one subpixel 33B, and another opening 133 overlaps with two subpixels (subpixel 33R and subpixel 33G).

[0081] 10C to 10E may also be used. Here, the subpixels 33B are arranged in a striped pattern, and on both sides of the row of the subpixels 33B, there are rows in which the subpixels 33R and the subpixels 33G are alternately arranged. Also, on both sides of one subpixel 33B, one subpixel 33R and one subpixel 33G are arranged. Note that in the configurations shown in FIGS. 10A to 10E, the subpixels are arranged in a striped pattern, but the present invention is not limited thereto. For example, in the display device of one embodiment of the present invention, the shape of the subpixels may be a pen-tile type.

[0082] Fig. 10C shows a configuration in which six sub-pixels (two for each color) overlap with one opening 133. Fig. 10D shows a configuration in which three sub-pixels (one for each color) overlap with one opening 133. Fig. 10E shows a configuration in which one sub-pixel overlaps with one opening 133. Note that the configuration is not limited to that shown here, and a configuration in which two or more adjacent sub-pixels overlap with one opening 133 may also be used.

[0083] The configurations, structures, methods, and the like described in this embodiment can be used in appropriate combination with the configurations, structures, methods, and the like described in other embodiment modes and examples.

[0084] (Embodiment 2) In this embodiment, a configuration example of an electronic device including the display device 100 shown in the above embodiment will be described with reference to Fig. 11 and Fig. 12. Note that in this embodiment, a smartphone will be described as an example of the electronic device, but other electronic devices such as a portable game terminal, a tablet PC (Personal Computer), and a notebook PC may also be used. In addition, the electronic device according to this embodiment can be applied to other electronic devices capable of wireless communication.

[0085] 11A includes an antenna 130, an application processor 11, a baseband processor 12, an integrated circuit 141 (IC: Integrated Circuit), a memory 14, a battery 15, a power management IC (PMIC: Power Management Integrated Circuit) 16, a display unit 17, a camera unit 18, an operation input unit 19, an audio IC 20, a microphone 21, and a speaker 22. The integrated circuit 141 is also called an RF (Radio Frequency) IC or a wireless chip.

[0086] The antenna 130 is provided according to a frequency band corresponding to the 5G communication standard. As described in the above-mentioned embodiment 1, since the antenna 130 can be arranged so as to be superimposed on a display portion of a display device, a plurality of antennas corresponding to a plurality of frequency bands can be arranged.

[0087] The application processor 11 has a function of reading out programs stored in the memory 14 and performing processing for implementing various functions of the electronic device 10. For example, the application processor 11 has a function of executing an OS (Operating System) program from the memory 14, and also executing application programs that operate on the OS program.

[0088] The baseband processor 12 has a function of performing baseband processing including encoding (e.g., error correction encoding) processing or decoding processing on data transmitted and received by the electronic device 10. Specifically, the baseband processor 12 has a function of receiving transmission data from the application processor 11, encoding the received transmission data, and transmitting the data to the integrated circuit 141. The baseband processor 12 also has a function of receiving reception data from the integrated circuit 141, decoding the received reception data, and transmitting the data to the application processor 11.

[0089] The integrated circuit 141 has a function of performing modulation processing or demodulation processing on data transmitted and received by the electronic device 10. Specifically, the integrated circuit 141 has a function of modulating transmission data received from the baseband processor 12 with a carrier wave to generate a transmission signal, and outputting the transmission signal via the antenna 130. The integrated circuit 141 also has a function of receiving a reception signal via the antenna 130, demodulating the reception signal with a carrier wave to generate reception data, and transmitting the reception data to the baseband processor 12.

[0090] The memory 14 has a function of storing programs and data used by the application processor 11. The memory 14 includes a non-volatile memory that retains stored data even when the power is cut off, and a volatile memory that clears stored data when the power is cut off.

[0091] The battery 15 is used when the electronic device 10 operates without relying on an external power source. The electronic device 10 can use the power source of the battery 15 even when an external power source is connected. It is preferable to use a secondary battery that can be charged and discharged as the battery 15.

[0092] The power management IC 16 has a function of generating an internal power supply from the battery 15 or an external power supply. This internal power supply is provided to each block of the electronic device 10. At this time, the power management IC 16 has a function of controlling the voltage of the internal power supply for each block that receives the supply of the internal power supply. The power management IC 16 controls the voltage of the internal power supply based on an instruction from the application processor 11. Furthermore, the power management IC 16 can also control the supply and cut-off of the internal power supply for each block. The power management IC 16 also has a function of controlling charging to the battery 15 when there is an external power supply.

[0093] The display unit 17 is a liquid crystal display device or a light emitting display device, and has a function of displaying various images in accordance with the processing in the application processor 11. The images displayed on the display unit 17 include user interface images with which the user gives operational instructions to the electronic device 10, camera images, videos, and the like.

[0094] The camera unit 18 has a function of acquiring an image according to instructions from the application processor 11. The operation input unit 19 has a function as a user interface that allows a user to operate and give operation instructions to the electronic device 10. The audio IC 20 has a function of decoding audio data transmitted from the application processor 11 and driving the speaker 22. In addition, the audio IC 20 has a function of encoding audio information obtained from the microphone 21 to generate audio data and output the audio data to the application processor 11.

[0095] Fig. 11B is a perspective view of the electronic device 10 including the components shown in Fig. 11A, and Fig. 11B illustrates some of the components shown in Fig. 11A.

[0096] In Fig. 11B, display unit 17 housed in housing 50 functions as antenna 130. Also shown in Fig. 11B are camera unit 18, operation input unit 19, microphone 21, and speaker 22 shown in Fig. 11A.

[0097] 11B, the display portion 17 occupies most of the housing 50. Therefore, by using a structure in which a conductive layer functioning as an antenna is provided over a substrate that serves as the display portion and an element layer having a transistor or the like is provided over the conductive layer, which is one embodiment of the present invention, the communication distance can be increased and the integrated circuit can be miniaturized.

[0098] Fig. 12 is a block diagram for explaining a configuration example of the integrated circuit 141. The integrated circuit 141 shown in Fig. 12 has a low-noise amplifier 31, a mixer 32, a low-pass filter 33, a variable gain amplifier 34, an analog-digital conversion circuit 35, an interface unit 36, a digital-analog conversion circuit 41, a variable gain amplifier 42, a low-pass filter 43, a mixer 44, a power amplifier 45, and an oscillation circuit 40. In Fig. 12, an antenna 130, a duplexer DUP, and a baseband processor 12 are also illustrated. Note that the low-noise amplifier 31, the mixer 32, the low-pass filter 33, the variable gain amplifier 34, and the analog-digital conversion circuit 35 may be referred to as a receiving circuit block, and the digital-analog conversion circuit 41, the variable gain amplifier 42, the low-pass filter 43, the mixer 44, and the power amplifier 45 may be referred to as a transmitting circuit block.

[0099] The baseband processor 12 and the integrated circuit 141 are each realized by an individual semiconductor chip.

[0100] 12, any one of the duplexer DUP surrounded by a dashed line 60, the low-noise amplifier 31 which is an amplifier, the mixer 32, the mixer 44, and the power amplifier 45 which is an amplifier can be manufactured using the transistor described in the above embodiment 1. The transistor is provided so as to overlap with a conductive layer provided on a substrate, and therefore can be provided in a display portion. Therefore, some circuits included in the integrated circuit 141 which is a semiconductor chip can be provided on the display portion side, and thus the integrated circuit can be miniaturized.

[0101] The low-noise amplifier 31 amplifies the signal received by the antenna 130 with low noise. The mixer 32 demodulates and down-converts (frequency converts) the signal using the signal from the oscillator circuit 40. The low-pass filter 33 removes unnecessary high-frequency components from the signal from the mixer 32. The variable gain amplifier 34 amplifies the output signal of the low-pass filter 33 with a gain that takes into account the input range of the analog-to-digital conversion circuit 35. The analog-to-digital conversion circuit 35 converts the analog signal from the variable gain amplifier 34 into a digital signal. The digital signal is output to the baseband processor 12 via the interface unit 36 ​​and the differential interface circuit.

[0102] The digital-to-analog conversion circuit 41 converts the digital signal received by the interface unit 36 ​​into an analog signal. The variable gain amplifier 42 amplifies the output signal of the digital-to-analog conversion circuit 41. The low-pass filter 43 removes unnecessary high-frequency components in the signal from the variable gain amplifier 42. The mixer 44 modulates and up-converts (frequency converts) the analog signal using the signal from the oscillator circuit 40. The power amplifier 45 amplifies the output signal of the mixer 44 with a predetermined gain and outputs it.

[0103] The configurations, structures, methods, and the like described in this embodiment can be used in appropriate combination with the configurations, structures, methods, and the like described in other embodiment modes and examples.

[0104] (Embodiment 3) In this embodiment, a schematic cross-sectional view of the display device 100 described in the above-mentioned first embodiment and a modified example of the schematic cross-sectional view will be described.

[0105] 13 is a cross-sectional schematic diagram of a display device applicable to the display device described in Embodiment 1. In FIG. 13, a cross-sectional structure on the substrate 110 side is illustrated as a display portion 170, and a conductive layer 131 and an element layer 161 on the substrate 120 side are also illustrated. The display portion 170 includes a transistor 201 and a light-emitting element 202 as an example of a display element. The element layer 161 includes a transistor 203.

[0106] 13 illustrates a cross-sectional structure in which a metal oxide (also referred to as an oxide semiconductor) is used as a semiconductor in which a channel is formed, for the transistors 201 and 203. As the semiconductor in which a channel is formed, a single crystal semiconductor substrate made of silicon, silicon carbide, or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate may be used.

[0107] An example of the configuration on the substrate 110 side will be described.

[0108] The transistor 201 includes a semiconductor layer 216, an insulating layer 220, a conductive layer 221, a conductive layer 217, a conductive layer 213, an insulating layer 215, an insulating layer 214, and the like.

[0109] The substrate 110 on which the transistor 201 is provided can be an insulating substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a ceramic substrate, or a semiconductor substrate such as a single crystal semiconductor substrate made of silicon, silicon carbide, or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate. The substrate 110 can be used as a flexible display device by being flexible like the substrate 120 described later.

[0110] An insulating layer 211 is provided over the substrate 110. The insulating layer 211 functions as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the substrate 110 to the transistor 201 and prevents oxygen from diffusing from the semiconductor layer 216 to the insulating layer 211 side. As the insulating layer 211, for example, a film through which hydrogen and oxygen are less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.

[0111] A conductive layer 213 is provided over an insulating layer 211, and an insulating layer 215 and an insulating layer 214 are provided to cover the conductive layer 213. A semiconductor layer 216 is provided over the insulating layer 215. The conductive layer 213 functions as a first gate electrode of the transistor 201, and a part of the insulating layer 215 and a part of the insulating layer 214 each function as a first gate insulating layer. The insulating layer 215 in contact with the semiconductor layer 216 is preferably an oxide insulating film such as a silicon oxide film. In addition, the insulating layer 214 between the insulating layer 215 and the conductive layer 213 is preferably an insulating film that functions as a barrier layer, like the insulating layer 211.

[0112] The semiconductor layer 216 preferably includes a metal oxide (oxide semiconductor) film having semiconductor properties.

[0113] A pair of conductive layers 217 are provided on the semiconductor layer 216 with a space therebetween. The conductive layer 217 functions as a source electrode and a drain electrode. An insulating layer 218 is provided to cover the semiconductor layer 216 and the conductive layer 217, and an insulating layer 219 is provided on the insulating layer 218. An opening reaching the semiconductor layer 216 is provided in the insulating layer 218 and the insulating layer 219, and an insulating layer 220 and a conductive layer 221 are embedded in the opening. An insulating layer 224 is provided to cover upper surfaces of the insulating layer 219, the conductive layer 221, and the insulating layer 220.

[0114] The conductive layer 221 functions as a second gate electrode, and the insulating layer 220 functions as a second gate insulating layer.

[0115] The insulating layer 218 and the insulating layer 224 are preferably formed using an insulating film functioning as a barrier layer, similar to the insulating layer 211. By covering the conductive layer 217 with the insulating layer 218, the conductive layer 217 can be prevented from being oxidized by oxygen contained in the insulating layer 219.

[0116] A plug electrically connected to the conductive layer 217 is provided inside an opening provided in the insulating layers 225, 224, 219, and 218. The plug preferably has a conductive layer 222 in contact with the side surface of the opening and the upper surface of the conductive layer 217, and a conductive layer 223 embedded inside the conductive layer 222. In this case, the conductive layer 222 is preferably made of a conductive material through which hydrogen and oxygen are unlikely to diffuse.

[0117] The light-emitting element 202 has a structure in which a conductive layer 226, an EL layer 228, and a conductive layer 230 are laminated in this order. The light-emitting element 202 is a so-called top-emission type light-emitting element that emits light to the side opposite to the surface on which it is formed. The conductive layer 230 preferably has light-transmitting properties. The conductive layer 226 preferably has a function of reflecting light. The light emitted from the EL layer 228 to the substrate 110 side is reflected by the conductive layer 226 and emitted to the substrate 120 side.

[0118] As the light-emitting element 202, a self-emitting element can be used, and the category of the element includes an element whose luminance is controlled by a current or a voltage. For example, an LED, an organic EL element, an inorganic EL element, etc. can be used. In particular, it is preferable to use an organic EL element.

[0119] The EL layer 228 has at least a light-emitting layer. The EL layer 228 may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property) as a layer other than the light-emitting layer.

[0120] Both low molecular weight compounds and high molecular weight compounds, and inorganic compounds may be used for the EL layer 228. The layers constituting the EL layer 228 can be formed by a deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0121] When a voltage higher than the threshold voltage of the light-emitting element 202 is applied between the cathode and the anode, holes are injected from the anode side and electrons are injected from the cathode side into the EL layer 228. The injected electrons and holes recombine in the EL layer 228, causing the light-emitting material contained in the EL layer 228 to emit light.

[0122] When a white-emitting light-emitting element is applied as the light-emitting element 202, it is preferable that the EL layer 228 contains two or more kinds of light-emitting materials. For example, white light emission can be obtained by selecting light-emitting materials such that the light emitted from each of the two or more light-emitting materials has a complementary color relationship. For example, it is preferable to include two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc., or light-emitting materials that emit light containing two or more color spectral components of R, G, and B. It is also preferable to apply a light-emitting element in which the spectrum of the light emitted from the light-emitting element has two or more peaks within the wavelength range of the visible light region (for example, 350 nm to 750 nm). It is also preferable that the emission spectrum of a material that has a peak in the yellow wavelength region has spectral components in the green and red wavelength regions as well.

[0123] The EL layer 228 is preferably configured to have a laminated structure of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, the multiple light-emitting layers in the EL layer 228 may be laminated in contact with each other, or may be laminated via a region that does not contain any light-emitting material. For example, a structure may be used in which a region that contains the same material (e.g., host material, assist material) as the fluorescent or phosphorescent light-emitting layer and does not contain any light-emitting material is provided between the fluorescent and phosphorescent light-emitting layers. This facilitates the fabrication of the light-emitting element and reduces the driving voltage.

[0124] Furthermore, the light emitting element 202 may be a single element having one EL layer, or may be a tandem element in which a plurality of EL layers are stacked with a charge generating layer interposed therebetween.

[0125] The above-mentioned light-emitting layer and the layer containing a substance with high hole injection properties, a substance with high hole transport properties, a substance with high electron transport properties, a substance with high electron injection properties, a bipolar substance, etc. may each contain an inorganic compound such as quantum dots or a polymer compound (oligomer, dendrimer, polymer, etc.). For example, quantum dots can be used in the light-emitting layer to function as a light-emitting material.

[0126] As the quantum dot material, colloidal quantum dot materials, alloy type quantum dot materials, core-shell type quantum dot materials, core type quantum dot materials, etc. may be used. Materials containing element groups of groups 12 and 16, groups 13 and 15, or groups 14 and 16 may also be used. Quantum dot materials containing elements such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, and aluminum may also be used.

[0127] Furthermore, each light-emitting unit may have a so-called microcavity structure (microresonator structure) realized by using a conductive film having transparency and reflectivity for the conductive layer 230. In this case, it is preferable that the optical distance between the surface of the conductive layer 226 that reflects visible light and the conductive layer 230 that has transparency and reflectivity to visible light is adjusted to be mλ / 2 (m is a natural number) or close thereto, where λ is the wavelength of light whose intensity is to be increased. In order to adjust the optical distance between each light-emitting unit, the thickness of the conductive layer 226, etc., can be made different between each light-emitting unit.

[0128] The light emitted from the light emitting element 202 has wavelengths other than the predetermined wavelength absorbed by the colored layer, and is emitted to the outside as, for example, red light, green light, or blue light. The colored layer may be configured to use the quantum dot material described above. In the above configuration, the light emitted from the light emitting element 202 is blue, so that color conversion (wavelength conversion) can be performed by the quantum dot material. In this configuration, it is not necessary to produce different light emitting elements 202 for each color, which is preferable because it reduces manufacturing costs.

[0129] A photodiode, which is a light receiving element, may be provided in the same layer as the light emitting element 202. This configuration can provide a touch sensor function to the display device. The active layer of the light receiving element can have a stacked structure in which a p-type semiconductor and an n-type semiconductor are stacked to realize a pn junction, or a stacked structure in which a p-type semiconductor, an i-type semiconductor, and an n-type semiconductor are stacked to realize a pin junction.

[0130] As the semiconductor used in the active layer of the light receiving element, an inorganic semiconductor such as silicon or an organic semiconductor containing an organic compound can be used. In particular, by using an organic semiconductor material, it becomes easy to form the EL layer 228 of the light emitting element 202 and the active layer of the light receiving element by vacuum deposition, and it is preferable because the manufacturing equipment can be shared.

[0131] When an organic semiconductor material is used as the active layer of a light receiving element, fullerene (e.g., C 60 , C 70 An electron-accepting organic semiconductor material such as phthalocyanine (Pc) or a derivative thereof can be used. An electron-donating organic semiconductor material such as copper(II) phthalocyanine (CuPc) or tetraphenyldibenzoperiflanthene (DBP) can be used as a p-type semiconductor material. The active layer of the light-receiving element may be a laminated structure (pn laminated structure) of an electron-accepting semiconductor material and an electron-donating semiconductor material, or a laminated structure (pin laminated structure) in which a bulk heterostructure layer is provided by co-evaporating an electron-accepting semiconductor material and an electron-donating semiconductor material between them. In order to suppress dark current when light is not irradiated, a layer functioning as a hole blocking layer or a layer functioning as an electron blocking layer may be provided around (upper or lower side of) the pn laminated structure or the pin laminated structure.

[0132] An insulating layer 231 and an insulating layer 232 are laminated on the light-emitting element 202 so as to cover the light-emitting element 202. These two insulating layers function as protective layers that prevent impurities such as water from diffusing into the light-emitting element 202. For the insulating layer 231, an inorganic insulating film with low moisture permeability, such as a silicon oxide film, a silicon nitride film, or an aluminum oxide film, is preferably used. For the insulating layer 232, an organic insulating film with high light transmissivity can be used. By using an organic insulating film for the insulating layer 232, the influence of the uneven shape below the insulating layer 232 can be mitigated, and the surface of the insulating layer 232 can be made smooth. This can improve adhesion when the insulating layer 232 is bonded to the element layer 161.

[0133] An example of the configuration on the substrate 120 side will be described.

[0134] The transistor 203 includes a semiconductor layer 305, an insulating layer 309, a conductive layer 310, a conductive layer 306, a conductive layer 303, an insulating layer 304, an insulating layer 302, and the like.

[0135] The semiconductor layer 305, the insulating layer 309, the conductive layer 310, the conductive layer 306, the conductive layer 303, the insulating layer 304, and the insulating layer 302 in the transistor 203 are similar to the semiconductor layer 216, the insulating layer 220, the conductive layer 221, the conductive layer 217, the conductive layer 213, the insulating layer 215, and the insulating layer 214 in the transistor 201.

[0136] The insulating layer 301, which is a component other than the transistor 203, is similar to the description of the insulating layer 211. The insulating layers 307, 308, 311, and 312 are similar to the descriptions of the insulating layers 218, 219, 224, and 225, respectively. The insulating layer 307 is similar to the description of the insulating layer 218. The conductive layers 313 and 314 are similar to the descriptions of the conductive layers 222 and 223, respectively.

[0137] The conductive layer 316 provided in the insulating layer 315 and the conductive layer 318 provided in the insulating layer 317 function as wirings for electrically connecting the transistor 203 to the conductive layer 320 or the conductive layer 321 .

[0138] The conductive layer 320 provided in the insulating layer 319 functions as an antenna. The conductive layer 321 provided in the insulating layer 319 functions as a wiring. The conductive layer 320 and the conductive layer 321 are preferably disposed so as not to overlap with the light-emitting element 202 so that light from the light-emitting element 202 is emitted to the display surface side.

[0139] Note that the transistor 203 can be formed in a similar manner to the transistor 201 over an insulating layer 301 formed over a substrate provided with a peeling layer that is separately prepared. The substrate 120 provided with the element layer 161 and the conductive layer 131 can be peeled off at a peeling surface provided in the peeling layer and attached to the substrate 110. Note that the substrate 110 and the substrate 120 may be bonded to each other using an adhesive layer provided on the outer periphery of the substrate. The substrate 120 can be a light-transmitting substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a plastic substrate. The substrate 120 can be used as a flexible display device by being flexible together with the substrate 110.

[0140] Next, components such as transistors that can be applied to the above-described display device will be described.

[0141] The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, a conductive layer functioning as a source electrode, a conductive layer functioning as a drain electrode, and an insulating layer functioning as a gate insulating layer.

[0142] Note that the structure of a transistor included in a display device of one embodiment of the present invention is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor may be used. In addition, the transistor may have either a top-gate type or a bottom-gate type structure. Alternatively, gate electrodes may be provided above and below a channel.

[0143] The crystallinity of a semiconductor material used in a transistor is not particularly limited, and any of an amorphous semiconductor, a single crystal semiconductor, and a semiconductor having crystallinity other than a single crystal semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single crystal semiconductor or a semiconductor having crystallinity is preferable because it can suppress deterioration of transistor characteristics.

[0144] In particular, a transistor using a metal oxide film for a semiconductor layer in which a channel is formed will be described below.

[0145] As a semiconductor material for a transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used. A representative example is a metal oxide containing indium, such as CAC-OS described later.

[0146] A transistor using a metal oxide which has a wider band gap and a lower carrier density than silicon can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time owing to its low off-state current.

[0147] The semiconductor layer may be, for example, a film represented by an In-M-Zn system oxide containing indium, zinc, and M (metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium).

[0148] When the metal oxide constituting the semiconductor layer is an In-M-Zn oxide, the atomic ratio of the metal elements of the sputtering target used to form the In-M-Zn oxide preferably satisfies In≧M and Zn≧M. As the atomic ratio of the metal elements of such a sputtering target, In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, etc. are preferable. The atomic ratio of the semiconductor layer to be formed includes a variation of ±40% of the atomic ratio of the metal elements contained in the above sputtering target.

[0149] The semiconductor layer is a metal oxide film with a low carrier density. For example, the semiconductor layer is a metal oxide film with a carrier density of 1×10 17 / cm 3 Less than or equal to 1×10 15 / cm 3 Less than 1×10, more preferably 13 / cm 3 Less than or equal to 1×10 11 / cm 3 Less than 1×10, more preferably 10 / cm 3 Less than 1 x 10 -9 / cm 3 Metal oxides having carrier densities of 1000 to 15000 sq. m can be used. Such metal oxides are called high-purity intrinsic or substantially high-purity intrinsic metal oxides. The metal oxides have low impurity concentrations and low defect level densities, and therefore can be said to have stable characteristics.

[0150] Note that the present invention is not limited to these, and an oxide semiconductor having an appropriate composition may be used depending on the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of a transistor that is required. In order to obtain the semiconductor characteristics of a transistor that is required, it is preferable to set the carrier density, impurity concentration, defect density, atomic ratio of a metal element to oxygen, interatomic distance, density, and the like of the semiconductor layer to be appropriate.

[0151] When silicon or carbon, which is one of the group 14 elements, is contained in the metal oxide constituting the semiconductor layer, oxygen vacancies increase in the semiconductor layer, causing it to become n-type. For this reason, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is set to 2×10 18 atoms / cm 3 Less than or equal to 2×10 17 atoms / cm 3 The following applies.

[0152] In addition, when an alkali metal or an alkaline earth metal is bonded to a metal oxide, carriers may be generated, which may increase the off-state current of a transistor. For this reason, the concentration of an alkali metal or an alkaline earth metal in a semiconductor layer obtained by secondary ion mass spectrometry is set to 1×10 18 atoms / cm 3 Less than or equal to 2×10 16 atoms / cm 3 To the following:

[0153] In addition, when nitrogen is contained in the metal oxide that constitutes the semiconductor layer, electrons that act as carriers are generated, the carrier density increases, and the transistor tends to become n-type. As a result, transistors that use metal oxides that contain nitrogen tend to have normally-on characteristics. For this reason, the nitrogen concentration in the semiconductor layer obtained by secondary ion mass spectrometry is 5×10 18 atoms / cm 3 It is preferable to do the following:

[0154] Oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors, which include c-axis-aligned crystalline oxide semiconductors (CAAC-OS), polycrystalline oxide semiconductors, nanocrystalline oxide semiconductors (nc-OS), amorphous-like oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0155] Further, a semiconductor layer of the transistor disclosed in one embodiment of the present invention may be formed using a cloud-aligned composite oxide semiconductor (CAC-OS).

[0156] Note that the above-described non-single-crystal oxide semiconductor or CAC-OS can be preferably used for a semiconductor layer of a transistor disclosed in one embodiment of the present invention. As the non-single-crystal oxide semiconductor, an nc-OS or a CAAC-OS can be preferably used.

[0157] Note that in one embodiment of the present invention, a CAC-OS is preferably used for a semiconductor layer of a transistor, because the use of a CAC-OS can impart excellent electrical characteristics or high reliability to the transistor.

[0158] The semiconductor layer may be a mixed film having two or more of a CAAC-OS region, a polycrystalline oxide semiconductor region, an nc-OS region, a pseudo-amorphous oxide semiconductor region, and an amorphous oxide semiconductor region. The mixed film may have a single layer structure or a multilayer structure including two or more of the above-mentioned regions.

[0159] Next, a structure of a cloud-aligned composite (CAC)-OS that can be used for the transistor disclosed in one embodiment of the present invention will be described.

[0160] CAC-OS is a material in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or in the vicinity thereof. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide and the regions containing the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or in the vicinity thereof, is also referred to as a mosaic or patch state.

[0161] The metal oxide preferably contains at least indium, particularly indium and zinc, and may further contain one or more elements selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like.

[0162] For example, the CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OS may be specifically referred to as CAC-IGZO) is an indium oxide (hereinafter, InO X1 (X1 is a real number greater than 0).) or indium zinc oxide (hereinafter, In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0.) and gallium oxide (GaO X3 (X3 is a real number greater than 0). ) or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z4 are real numbers greater than 0).) The material is separated into a mosaic shape, and the mosaic shape of InO X1 , or In X2 Zinc Y2 O Z2 However, the structure is such that the particles are uniformly distributed in the film (hereinafter, also referred to as a cloud-like structure).

[0163] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 In the present specification, for example, when the atomic ratio of In to element M in the first region is greater than the atomic ratio of In to element M in the second region, the first region is said to have a higher In concentration than the second region.

[0164] IGZO is a common name and may refer to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number).

[0165] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure, where multiple IGZO nanocrystals have a c-axis orientation and are connected without being oriented in the ab plane.

[0166] On the other hand, CAC-OS is a material composition of metal oxide. CAC-OS is a material composition containing In, Ga, Zn, and O, in which some regions observed as nanoparticles mainly composed of Ga and some regions observed as nanoparticles mainly composed of In are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary element.

[0167] Note that the CAC-OS does not include a laminated structure of two or more films with different compositions, such as a two-layer structure consisting of a film mainly containing In and a film mainly containing Ga.

[0168] In addition, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 In some cases, it may be difficult to observe a clear boundary between the region in which the main component is the

[0169] In addition, when one or more elements selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. are contained instead of gallium, the CAC-OS has a configuration in which some regions observed to be in the form of nanoparticles mainly composed of the metal element and some regions observed to be in the form of nanoparticles mainly composed of In are randomly dispersed in a mosaic pattern.

[0170] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not intentionally heated. When CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as a deposition gas. The lower the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition, the more preferable it is, and for example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0171] CAC-OS has the characteristic that no clear peaks are observed when it is measured using the θ / 2θ scan by the out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. In other words, the X-ray diffraction measurement shows that there is no orientation in the ab plane direction or the c axis direction in the measurement area.

[0172] In addition, in the electron beam diffraction pattern obtained by irradiating CAC-OS with an electron beam (also called nano-beam electron beam) with a probe diameter of 1 nm, a ring-shaped region with high brightness and multiple bright spots are observed within the ring-shaped region. Therefore, the electron beam diffraction pattern shows that the crystal structure of CAC-OS has an nc (nano-crystal) structure that does not have orientation in the planar direction and cross-sectional direction.

[0173] For example, in the case of CAC-OS of In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) revealed that GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 It can be seen that the region in which the main component is the crystalline silicon is unevenly distributed and mixed.

[0174] CAC-OS has a different structure from IGZO compounds in which metal elements are uniformly distributed, and has different properties from IGZO compounds. X3 The main components are In X2 Zinc Y2 O Z2 , or InO X1 The structure is such that the regions having each element as the main component are separated from each other in a mosaic pattern.

[0175] Here, In X2 Zinc Y2 O Z2 , or InO X1 The area where GaO is the main component X3 This region has a higher electrical conductivity than the region where In is the main component. X2 Zinc Y2 O Z2 , or InO X1 When carriers flow through the region where In is the main component, the conductivity of the metal oxide is expressed. X2 Zinc Y2 O Z2 , or InO X1 A high field-effect mobility (μ) can be achieved by distributing the regions in which the main component is a cloud-like structure in the metal oxide.

[0176] On the other hand, GaO X3 The region where the main components are In X2 Zinc Y2 O Z2 , or InOX1 This region has higher insulating properties than the region where GaO is the main component. X3 By distributing regions in which the main components are such as those mentioned above in the metal oxide, leakage current can be suppressed and good switching operation can be achieved.

[0177] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation caused by X2 Zinc Y2 O Z2 , or InO X1 The conductivity caused by the MOSFET and the MOSFET's resistance to the MOSFET's resistance work in a complementary manner, resulting in a high on-state current (I on ), and high field-effect mobility (μ).

[0178] In addition, semiconductor elements using CAC-OS have high reliability, making CAC-OS ideal for a variety of semiconductor devices including displays.

[0179] In addition, since a transistor having a CAC-OS semiconductor layer has high field-effect mobility and high driving capability, a display device with a narrow frame width (also called a narrow frame) can be provided by using the transistor in a driver circuit, typically a scan line driver circuit that generates a gate signal. In addition, a display device with a small number of wirings connected to the display device can be provided by using the transistor in a signal line driver circuit (particularly, a demultiplexer connected to an output terminal of a shift register in the signal line driver circuit).

[0180] Moreover, a transistor having a CAC-OS in the semiconductor layer does not require a laser crystallization process, unlike a transistor using low-temperature polysilicon. Therefore, even in a display device using a large-area substrate, it is possible to reduce manufacturing costs. Furthermore, in a large display device with high resolution such as ultra-high vision ("4K resolution", "4K2K", "4K") and super-high vision ("8K resolution", "8K4K", "8K"), by using a transistor having a CAC-OS in the semiconductor layer in a driving circuit and a display section, writing can be performed in a short time, and display defects can be reduced, which is preferable.

[0181] Alternatively, silicon may be used for the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as the silicon, it is preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single crystal silicon, or the like. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and has higher field effect mobility and higher reliability than amorphous silicon.

[0182] Next, a configuration applicable to a conductive layer of a display device, particularly to a conductive layer of a transistor, will be described.

[0183] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, or alloys containing these as main components. Films containing these materials can be used as a single layer or a laminated structure. For example, there are a single layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, a three-layer structure in which a titanium film or titanium nitride film is laminated on the titanium film or titanium nitride film, and a three-layer structure in which an aluminum film or copper film is laminated on the titanium film or titanium nitride film, and a three-layer structure in which an aluminum film or copper film is laminated on the molybdenum film or molybdenum nitride film is laminated on the molybdenum film or molybdenum nitride film is laminated on the molybdenum film or molybdenum nitride film. Alternatively, oxides such as indium oxide, tin oxide, zinc oxide, etc. may be used. Furthermore, copper containing manganese is preferably used because it enhances the controllability of the shape by etching.

[0184] Next, a configuration applicable to the insulating layer of the display device will be described.

[0185] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic and epoxy, resins having siloxane bonds, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0186] Moreover, the light emitting element is preferably provided between a pair of insulating films with low water permeability, which can prevent impurities such as water from entering the light emitting element and suppress deterioration of the reliability of the device.

[0187] Examples of the insulating film having low water permeability include a film containing nitrogen and silicon, such as a silicon nitride film or a silicon nitride oxide film, and a film containing nitrogen and aluminum, such as an aluminum nitride film. In addition, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, etc. may also be used.

[0188] For example, the water vapor permeability of an insulating film with low water permeability is 1×10 -5 [g / (m 2 ·day)] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×10 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 ·day)] or less.

[0189] The above is a description of the components.

[0190] Next, a part of a manufacturing method of a display device will be described with reference to FIGS. 14A, 14B to 16A, and 16B regarding a configuration example on the substrate 120 side.

[0191] First, a peeling layer 331 is formed on a formation substrate 330, and an insulating layer 301, which is a layer to be peeled off, is formed on the peeling layer 331. An element layer 161 and a conductive layer 131 are provided on the insulating layer 301. Note that in this state, the conductive layer 320 and the conductive layer 321 in the conductive layer 131 are covered with an insulating layer 319A as illustrated in FIG. 14A. The insulating layer 319A corresponds to the insulating layer 319.

[0192] As shown in Fig. 14B, the release layer 331 and the preparation substrate 330 can be separated between the release layer 331 and the insulating layer 301, which is the layer to be peeled off. As shown in Fig. 14B, the surface of the insulating layer 319A is polished by a polishing technique such as CMP (Chemical Mechanical Polishing) to expose the conductive layer 320 and the conductive layer 321 and to flatten the surface.

[0193] The separation of the peeling layer 331 and the insulating layer 301, which is the layer to be peeled, may be performed by penetrating a liquid such as water into the interface to separate the peeling layer 331 from the insulating layer 301, which is the layer to be peeled. The liquid seeps into the gap between the peeling layer 331 and the insulating layer 301, which is the layer to be peeled, by capillary action, and this can prevent static electricity generated during peeling from the substrate from adversely affecting the element layer included on the insulating layer 301 side, which is the layer to be peeled (e.g., the semiconductor element is destroyed by static electricity).

[0194] For example, a tungsten film can be used as the peeling layer 331. The tungsten film can be formed as a tungsten oxide film between the tungsten film and the layer to be peeled off by using an oxidation method such as performing plasma processing with a gas containing oxygen such as NO, annealing in a gas atmosphere containing oxygen, or forming a tungsten oxide film by a method such as sputtering in a gas atmosphere containing oxygen.

[0195] At the time of carrying out the peeling and transferring process, the tungsten oxide film preferably contains a large amount of tungsten oxide having a ratio of oxygen to tungsten of less than 3. n O (3n-1) ,W n O (3n-2) In the case of the homologous series, a crystal optical shear plane exists, and overheating makes shearing more likely. By performing N2O plasma treatment and forming a tungsten oxide film, the layer to be peeled off can be peeled off from the substrate with little force.

[0196] Alternatively, a tungsten oxide film can be directly formed without forming a tungsten film. For example, a sufficiently thin tungsten film may be subjected to plasma treatment with a gas containing oxygen, annealing treatment in a gas atmosphere containing oxygen, or a tungsten oxide film may be formed by a method such as sputtering in a gas atmosphere containing oxygen, thereby forming only a tungsten oxide film as a peeling layer.

[0197] At this time, separation may occur at the interface between the tungsten film and the tungsten oxide film or inside the tungsten oxide film, so that the tungsten oxide film may remain on the peeled layer side. The remaining tungsten oxide film may adversely affect the characteristics of the transistor. Therefore, it is preferable to have a step of removing the tungsten oxide film after the step of separating the peeling layer from the peeled layer. In addition, since the above-mentioned method of peeling from the substrate does not necessarily require NO plasma treatment, it is possible to eliminate the step of removing the tungsten oxide film. In this case, the device can be manufactured more easily.

[0198] As an example, a tungsten film having a thickness of 0.1 nm or more and less than 200 nm can be used on the substrate.

[0199] Other than a tungsten film, a film containing molybdenum, titanium, vanadium, tantalum, silicon, aluminum, or an alloy thereof may be used for the peeling layer 331. A laminate structure of these films and their oxide films may also be used. The peeling layer 331 is not limited to an inorganic film, and an organic film such as polyimide may also be used.

[0200] 15A, the substrate 120 can be attached to the planarized surfaces of the exposed conductive layer 320 and the conductive layer 321. As described above, the substrate 120 can be a light-transmitting substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a plastic substrate. The substrate 120 can be used as a flexible display device by forming the substrate 120 together with the substrate 110 as a flexible substrate (flexible substrate).

[0201] 15A, an opening 335 reaching the conductive layer 321 is provided in the element layer 161 and the conductive layer 131. As shown in FIG. 15B, the conductive layer 332 is provided to fill the opening 335, and an FPC 333 is provided on the insulating layer 301 side.

[0202] Note that a flexible substrate 120A provided on a support substrate 341 may be attached to the planarized surfaces of the exposed conductive layers 320 and 321 as shown in Fig. 16A. The support substrate 341 is separated from the flexible substrate 120A as shown in Fig. 16B. Then, by providing a conductive layer 332 and an FPC 333 as in Fig. 14B, a foldable display device can be obtained.

[0203] Next, an example of an electronic device including a foldable display device will be described with reference to Fig. 17A and Fig. 17B. As shown in Fig. 17A, an electronic device 400 including a display device according to one embodiment of the present invention has a display device including regions 401A, 401B, and 401C in a housing 402. Regions 401B and 401C can be provided in a bent portion because the display device is foldable and can be stored in the housing 402 in a folded shape.

[0204] Fig. 17B is a cross-sectional view taken along line X1-X2 of electronic device 400 shown in Fig. 17A. As shown in Fig. 17B, in electronic device 400, a display device having folded substrate 110 and substrate 120 is housed in housing 402. Housing 402 also contains substrate 140 connected to the display device. Housing 402 protects the display device and the like from external stress.

[0205] Regions 401A, 401B, and 401C corresponding to the display portion can be arranged not only in the flat portion of the housing 402 but also in the curved portion. As described in the above-described embodiment 1, a conductive layer functioning as an antenna can be arranged in the display portion. Therefore, the region in which the conductive layer functioning as an antenna is arranged can be increased.

[0206] 17A and 17B, an example of an electronic device including a foldable display device will be described with reference to Fig. 18. As shown in Fig. 18, an electronic device 400A including a display device of one embodiment of the present invention has a display device 401 accommodated in a foldable housing 402. Both the housing 402 and the display device 401 are foldable display devices, and therefore the electronic device 400A can be a foldable electronic device.

[0207] 18, the electronic device 400A has a substrate 110 and a substrate 120 provided along a housing 402. The display device 401 can be provided regardless of the shape of the electronic device 400A. Therefore, the area in which the conductive layer functioning as an antenna is arranged can be increased.

[0208] A deformable configuration can be achieved by configuring the electronic device in Fig. 18. Fig. 19A to Fig. 19C illustrate an electronic device different from those in Fig. 17A, Fig. 17B, and Fig. 18. An electronic device 400B illustrated in Fig. 19A to Fig. 19C illustrates a configuration in which the housing and the display device are deformed for use.

[0209] The electronic device 400B shown in FIG. 19A can be made to have a shape shown in FIG. 19C through the shape shown in FIG. 19B, thereby enabling the area of ​​the display unit of the display device to be enlarged or reduced. Therefore, the number of conductive layers functioning as antennas arranged side by side on the substrate of the display device can be adjusted. For example, the reception sensitivity can be increased when the electronic device is in a tablet shape compared to when the electronic device is folded. Therefore, the electronic device can have different reception sensitivity depending on the change in shape.

[0210] This embodiment mode can be implemented in appropriate combination with other embodiment modes and examples described in this specification.

[0211] (Embodiment 4) In this embodiment, a structure of a touch panel that can be applied to a display device of one embodiment of the present invention will be described with reference to FIGS.

[0212] Fig. 20 is a top view of a touch panel 500 exemplified in this embodiment. For clarity, representative components are shown in Fig. 20. In Fig. 20, the conductive layers are illustrated as hatched electrodes, but similar to Fig. 3A, the conductive layers have openings in areas that overlap with pixels. Therefore, the conductive layers illustrated in Fig. 20 are translucent.

[0213] The touch panel 500 includes, in addition to the conductive layer 131 functioning as the antenna 130 described in the first embodiment, as an example, conductive layers X1 to X3 functioning as electrodes provided in the X direction and conductive layers Y1 to Y3 functioning as electrodes provided in the Y direction.

[0214] The conductive layers X1 to X3 and the conductive layers Y1 to Y3 are disposed so as to fill the gaps between the equally spaced antennas 131 functioning as antennas 130. This configuration can reduce the area of ​​the region where the conductive layers are not provided, reduce the unevenness in transmittance, and impart the function of a touch sensor to the substrate 120 side. In addition, by disposing the conductive layers functioning as electrodes of the touch sensor between adjacent antennas, it is possible to suppress the formation of thin portions of the layer including the conductive layers. Therefore, it is possible to improve the coverage of the thin film formed after the conductive layer formation process and flatten the surface. Furthermore, by making the thickness of the conductive layer uniform, the unevenness in the luminance of light from pixels passing through the conductive layer is reduced, and a display device with improved display quality can be realized. The frequency of the signal used in the touch sensor is different from the frequency of the signal used in wireless communication, so that the signals can be separated.

[0215] As shown in FIG. 20, a plurality of conductive layers functioning as antennas can be arranged between the conductive layers X1 to X3 and the conductive layers Y1 to Y3 functioning as electrodes of the touch panel, so that antennas of different shapes or sizes can also be arranged. Therefore, a configuration can be made in which wireless signals of different frequencies are transmitted and received. In addition, since a plurality of antennas of the same shape and size can be arranged, a beamforming technique can be applied using antennas arranged in an array. Since the beamforming technique can provide antenna directionality, it is possible to compensate for radio wave propagation loss when the communication frequency becomes high.

[0216] 20 shows an example in which the conductive layers 131 are regularly arranged in a quadrangular shape, but the present invention is not limited to this example. For example, the conductive layers 131 may be arranged in a circular, triangular, pentagonal, hexagonal, or octagonal shape.

[0217] The conductive layers X1 to X3 and the conductive layers Y1 to Y3 functioning as electrodes of a touch panel function as electrodes of a capacitance type touch sensor, for example. The capacitance type includes a surface capacitance type and a projected capacitance type. The projected capacitance type includes a self-capacitance type and a mutual capacitance type, mainly depending on the difference in the driving method. The mutual capacitance type is preferable because it enables simultaneous multi-point detection.

[0218] In the case of the projected self-capacitance method, a pulse voltage is applied to each of the conductive layers X1 to X3 and the conductive layers Y1 to Y3 in a scanning manner, and the value of the current flowing through the conductive layers at that time is detected. When a detected object approaches, the magnitude of the current changes, and by detecting this difference, the position information of the detected object can be obtained. In the case of the projected mutual capacitance method, a pulse voltage is applied to either the conductive layers X1 to X3 or the conductive layers Y1 to Y3 in a scanning manner, and the position information of the detected object is obtained by detecting the current flowing through the other layer.

[0219] It is preferable that the intersections of the conductive layers X1 to X3 and the conductive layers Y1 to Y3 are connected via a conductive layer provided in another layer. It is preferable that the area of ​​the intersections of the conductive layers X1 to X3 and the conductive layers Y1 to Y3 be as small as possible.

[0220] In the case of the projected self-capacitance method, a pulse voltage is applied to each of the conductive layers X1 to X3 and the conductive layers Y1 to Y3 in a scanning manner, and the value of the current flowing through the conductive layers at that time is detected. When a detected object approaches, the magnitude of the current changes, and by detecting this difference, the position information of the detected object can be obtained. In the case of the projected mutual capacitance method, a pulse voltage is applied to one of the conductive layers X1 to X3 and the conductive layers Y1 to Y3 in a scanning manner, and by detecting the current flowing through the other layer, the position information of the detected object can be obtained.

[0221] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0222] (Embodiment 5) In this embodiment, an example of an electronic device including the above-described display device will be described with reference to FIGS. 21A to 21F. FIG.

[0223] Examples of electronic devices using the display device according to one embodiment of the present invention include display devices such as televisions and monitors, lighting devices, desktop or notebook personal computers, word processors, and DVDs (Digital Versatile Examples of such devices include image playback devices that play back still or moving images stored on recording media such as a portable CD player, a radio, a tape recorder, a headphone stereo, a stereo, a table clock, a wall clock, a cordless telephone handset, a transceiver, a mobile phone, a car telephone, a portable game machine, a tablet terminal, a large game machine such as a pachinko machine, a calculator, a portable information terminal (also called a "mobile information terminal"), an electronic organizer, an electronic book terminal, an electronic translator, a voice input device, a video camera, a digital still camera, an electric shaver, a high-frequency heating device such as a microwave oven, an electric rice cooker, an electric washing machine, an electric vacuum cleaner, a hot water heater, an electric fan, a hair dryer, an air conditioning device such as an air conditioner, a humidifier, a dehumidifier, a dishwasher, a dish dryer, a clothes dryer, a futon dryer, an electric refrigerator, an electric freezer, an electric refrigerator-freezer, a DNA storage freezer, a flashlight, a tool such as a chainsaw, a smoke detector, a medical device such as a dialysis machine, and the like. Further examples include industrial equipment such as emergency lights, traffic lights, belt conveyors, elevators, escalators, industrial robots, power storage systems, and power storage devices for power leveling and smart grids.

[0224] In addition, a mobile object propelled by an electric motor using electric power from a power storage device is also included in the category of electronic devices. Examples of the mobile object include electric vehicles (EVs), hybrid vehicles (HEVs) that combine an internal combustion engine and an electric motor, plug-in hybrid vehicles (PHEVs), tracked vehicles in which the tires and wheels of these vehicles are replaced with tracks, mopeds including electrically assisted bicycles, motorcycles, electric wheelchairs, golf carts, small or large ships, submarines, helicopters, aircraft, rockets, artificial satellites, space probes, planetary probes, spaceships, and the like.

[0225] A display device according to one embodiment of the present invention can be used for a display portion, a communication device, or the like built into these electronic devices.

[0226] The electronic device may have sensors (including those with the ability to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared), etc.

[0227] The electronic device can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0228] 21A to 21F show an example of an electronic device.

[0229] 21A shows an example of a wristwatch-type portable information terminal. The portable information terminal 6100 includes a housing 6101, a display portion 6102, a band 6103, operation buttons 6105, and the like. By using a display device according to one embodiment of the present invention for the display portion 6102, the portable information terminal 6100 can be made smaller.

[0230] 21B shows an example of a mobile phone. A mobile information terminal 6200 includes a display unit 6202 incorporated in a housing 6201, an operation button 6203, a speaker 6204, a microphone 6205, and the like.

[0231] The portable information terminal 6200 also includes a fingerprint sensor 6209 in an area overlapping with the display unit 6202. The fingerprint sensor 6209 may be an organic light sensor. Since fingerprints are different for each person, a fingerprint pattern can be obtained by the fingerprint sensor 6209 to perform personal authentication. Light emitted from the display unit 6202 can be used as a light source for obtaining the fingerprint pattern by the fingerprint sensor 6209.

[0232] By using a display device according to one embodiment of the present invention for the display portion 6202, the portable information terminal 6200 can be made smaller.

[0233] 21C shows an example of a cleaning robot. The cleaning robot 6300 has a display unit 6302 arranged on the top surface of a housing 6301, a plurality of cameras 6303 arranged on the side surface, a brush 6304, an operation button 6305, various sensors, and the like. Although not shown, the cleaning robot 6300 is provided with tires, a suction port, and the like. The cleaning robot 6300 can move by itself, detect dust 6310, and suck up the dust from a suction port provided on the bottom surface.

[0234] For example, the cleaning robot 6300 can analyze an image captured by the camera 6303 and determine the presence or absence of an obstacle such as a wall, furniture, or a step. When an object that may become entangled in the brush 6304, such as a wire, is detected by image analysis, the cleaning robot 6300 can stop rotation of the brush 6304. By using a display device according to one embodiment of the present invention for the display portion 6302, the cleaning robot 6300 can be made smaller.

[0235] Fig. 21D shows an example of a robot. The robot 6400 shown in Fig. 21D includes a computing device 6409, an illuminance sensor 6401, a microphone 6402, an upper camera 6403, a speaker 6404, a display unit 6405, a lower camera 6406, an obstacle sensor 6407, and a moving mechanism 6408.

[0236] The microphone 6402 has a function of detecting the user's voice, environmental sounds, etc. The speaker 6404 has a function of emitting sound. The robot 6400 can communicate with the user using the microphone 6402 and the speaker 6404.

[0237] The display unit 6405 has a function of displaying various information. The robot 6400 can display information desired by the user on the display unit 6405. The display unit 6405 may be equipped with a touch panel. The display unit 6405 may also be a removable information terminal, and by installing it in a fixed position on the robot 6400, charging and data transfer are possible.

[0238] The display portion 6405 is equipped with an illuminance sensor, a camera, operation buttons, and the like, and can be operated by touching the display portion 6405 with a stylus pen, etc. Functions of the display portion 6405 include voice calls, video calls, e-mail, a notebook, Internet connection, music playback, and the like.

[0239] The upper camera 6403 and the lower camera 6406 have a function of capturing an image of the surroundings of the robot 6400. In addition, the obstacle sensor 6407 can detect the presence or absence of an obstacle in the moving direction when the robot 6400 moves forward using the moving mechanism 6408. The robot 6400 can recognize the surrounding environment and move safely using the upper camera 6403, the lower camera 6406, and the obstacle sensor 6407. The light-emitting device of one embodiment of the present invention can be used for the display portion 6405.

[0240] By using a display device according to one embodiment of the present invention for the display portion 6405, the robot 6400 can be miniaturized.

[0241] 21E illustrates an example of a television receiver. A television receiver 6500 illustrated in FIG. 21E includes a housing 6501, a display portion 6502, a speaker 6503, and the like.

[0242] By using a display device according to one embodiment of the present invention for the display portion 6502, the television receiver 6500 can be made smaller.

[0243] 21F illustrates an example of an automobile. The automobile 7160 includes an engine, tires, brakes, a steering device, a camera, and the like. The automobile 7160 includes a display device according to one embodiment of the present invention inside. By using the display device according to one embodiment of the present invention in the automobile 7160, the automobile 7160 can function as an IoT device and the display device can be made smaller in size.

[0244] The configurations, structures, methods, and the like shown in this embodiment can be used in appropriate combination with the configurations, structures, methods, and the like shown in other embodiment modes and embodiments.

[0245] (Additional notes regarding the present specification, etc.) The above embodiment and each configuration in the embodiment will be described below with additional notes.

[0246] The configurations shown in each embodiment can be combined with the configurations shown in other embodiments or examples to form one aspect of the present invention. In addition, when multiple configuration examples are shown in one embodiment, the configuration examples can be combined as appropriate.

[0247] In addition, the content (or a part of the content) described in one embodiment can be applied to, combined with, or replaced by another content (or a part of the content) described in that embodiment, and / or the content (or a part of the content) described in one or more other embodiments.

[0248] The contents described in the embodiments refer to contents described in each embodiment using various figures or contents described using text in the specification.

[0249] In addition, a figure (or a part of it) described in one embodiment can be combined with another part of that figure, with another figure (or a part of it) described in that embodiment, and / or with a figure (or a part of it) described in one or more other embodiments to form even more figures.

[0250] In addition, in the present specification and the like, in the block diagrams, the components are classified by function and shown as mutually independent blocks. However, in actual circuits and the like, it is difficult to separate the components by function, and there may be cases where one circuit is involved in multiple functions, or where one function is involved across multiple circuits. Therefore, the blocks in the block diagrams are not limited to the components described in the specification, and may be rephrased appropriately according to the situation.

[0251] In addition, in the drawings, the size, layer thickness, or region are shown at an arbitrary size for convenience of explanation. Therefore, they are not necessarily limited to the scale. Note that the drawings are shown diagrammatically for clarity, and are not limited to the shapes or values ​​shown in the drawings. For example, it is possible to include variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing deviations.

[0252] In addition, the positional relationship of components shown in the drawings is relative. Therefore, when describing components with reference to the drawings, terms such as "above" and "below" that indicate the positional relationship may be used for convenience. The positional relationship of components is not limited to the contents described in this specification, and can be rephrased appropriately depending on the situation.

[0253] In this specification and the like, when describing the connection relationship of a transistor, one of the source and drain is expressed as "one of the source or drain" (or first electrode, or first terminal), and the other of the source and drain is expressed as "the other of the source or drain" (or second electrode, or second terminal). This is because the source and drain of a transistor change depending on the structure or operating conditions of the transistor. The source and drain of a transistor can be appropriately referred to as source (drain) terminal, source (drain) electrode, etc. depending on the situation.

[0254] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring", and vice versa. Furthermore, the terms "electrode" and "wiring" include cases where multiple "electrodes" or "wirings" are formed integrally.

[0255] In addition, in this specification and the like, voltage and potential can be interchanged as appropriate. Voltage is a potential difference from a reference potential, and if the reference potential is a ground voltage (earth voltage), for example, voltage can be interchanged with potential. Ground potential does not necessarily mean 0V. Note that potential is relative, and the potential applied to wiring, etc. may be changed depending on the reference potential.

[0256] In this specification and the like, a node can be referred to as a terminal, a wiring, an electrode, a conductive layer, a conductor, an impurity region, etc. depending on a circuit configuration, a device structure, etc. Also, a terminal, a wiring, etc. can be referred to as a node.

[0257] In this specification, A and B are connected means that A and B are electrically connected. Here, A and B are electrically connected means a connection in which an electrical signal between A and B can be transmitted when an object (an element such as a switch, a transistor element, or a diode, or a circuit including the element and wiring) exists between A and B. Note that when A and B are electrically connected, this includes a case in which A and B are directly connected. Here, A and B are directly connected means a connection in which an electrical signal between A and B can be transmitted through wiring (or electrodes) between A and B without passing through the object. In other words, a direct connection means a connection that can be regarded as the same circuit diagram when expressed as an equivalent circuit.

[0258] In this specification, a switch refers to a device that has a function of controlling whether a current flows or not by being in a conductive state (on state) or a non-conductive state (off state), or a device that has a function of selecting and switching a path for a current to flow.

[0259] In this specification, the channel length refers to, for example, in a top view of a transistor, a region where a semiconductor (or a portion in the semiconductor through which current flows when the transistor is on) and a gate overlap, or a distance between the source and drain in a region where a channel is formed.

[0260] In this specification, the channel width refers to, for example, the length of the region where a semiconductor (or the portion in the semiconductor through which current flows when the transistor is on) and a gate electrode overlap, or the length of the portion where a source and a drain face each other in a region in which a channel is formed.

[0261] In this specification and the like, the terms "film" and "layer" can be interchanged depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer". [Explanation of symbols]

[0262] : 10: electronic device, 11: application processor, 12: baseband processor, 14: memory, 15: battery, 16: power management IC, 17: display unit, 18: camera unit, 19: operation input unit, 20: audio IC, 21: microphone, 22: speaker, 31: low noise amplifier, 32: mixer, 33: low pass filter, 33B: sub-pixel, 33G: sub-pixel, 33R: sub-pixel, 33Y: sub-pixel, 34: variable gain amplifier, 35: analog-to-digital conversion circuit, 36: interface unit, 40: oscillation circuit, 41: digital-to-analog conversion circuit , 42: variable gain amplifier, 43: low pass filter, 44: mixer, 45: power amplifier, 50: housing, 100: display device, 110: substrate, 111: display unit, 112: FPC, 113: IC, 114: wiring, 115: circuit, 116: pixel, 120: substrate, 120A: flexible substrate, 122: FPC, 130: antenna, 130_N: antenna, 130_1: antenna, 131: conductive layer, 131A: conductive layer, 131D: conductive layer, 131P: conductive layer, 131Q: conductive layer, 132: conductive layer, 133: opening, 133A: opening, 133B: opening, 133C : opening, 134: notch, 135: protrusion, 140: substrate, 141: integrated circuit, 142: amplifier, 160: region, 161: element layer, 162: opening, 163: wiring, 164: transistor, 170: display section, 201: transistor, 202: light-emitting element, 203: transistor, 211: insulating layer, 213: conductive layer, 214: insulating layer, 215: insulating layer, 216: semiconductor layer, 217: conductive layer, 218: insulating layer, 219: insulating layer, 220: insulating layer, 221: conductive layer, 222: conductive layer, 223: conductive layer, 224: insulating layer, 225: insulating layer, 226: conductive layer, 228 :EL layer, 230: conductive layer, 231: insulating layer, 232: insulating layer, 301: insulating layer, 302: insulating layer, 303: conductive layer, 304: insulating layer, 305: semiconductor layer, 306: conductive layer, 307: insulating layer, 308: insulating layer, 309: insulating layer, 310: conductive layer, 313: conductive layer, 314: conductive layer, 315: insulating layer, 316: conductive layer, 317: insulating layer, 318: conductive layer, 319: insulating layer, 319A: insulating layer, 320: conductive layer, 321: conductive layer, 330: preparation substrate, 331: peeling layer, 332: conductive layer, 333: FPC, 335: opening, 341: support substrate, 400: electronic device,400A: electronic device, 400B: electronic device, 401: display device, 401A: area, 401B: area, 401C: area, 402: housing, 6100: mobile information terminal, 6101: housing, 6102: display unit, 6103: band, 6105: operation button, 6200: mobile information terminal, 6201: housing, 6202: display unit, 6203: operation button, 6204: speaker, 6205: microphone, 6209: fingerprint sensor, 6300: cleaning robot, 6301: housing, 6302: display unit, 6303: camera, 6304: brush, 6305: operation button, 6310: dust, 6400: robot, 6401: illuminance sensor, 6402: microphone, 6403: upper camera, 6404: speaker, 6405: display unit, 6406: lower camera, 6407: obstacle sensor, 6408: moving mechanism, 6409: computing device, 6500: television receiver, 6501: housing, 6502: display unit, 6503: speaker, 7160: automobile,

Claims

[Claim 1] A first substrate on which a plurality of pixels each having a display element is provided; a second substrate having a first conductive layer with a plurality of first openings; the first conductive layer has a function of an antenna capable of transmitting and receiving a wireless signal; The pixel and the first opening have an overlapping area.

Images