Gate valve device and semiconductor manufacturing device

Abstract

To provide a gate valve device and a semiconductor manufacturing device that reduce the volume of a driving part for driving a valve element.SOLUTION: A gate valve device comprises a case comprising an opening part, a valve element for opening / closing the opening part, and a driving part for driving the valve element. The driving part comprises: a first crankshaft comprising a first input shaft rotatably supported by a side wall of the case, and a first output shaft rotatably supported by the valve element; a second crankshaft comprising a second input shaft rotatably supported by the side wall of the case, and a second output shaft rotatably supported by the valve element; a rotation transmission part for transmitting the rotation of the first input shaft to the second input shaft; and an actuator for rotating the first input shaft.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a gate valve device and a semiconductor manufacturing device. [Background technology]

[0002] Patent Document 1 discloses a gate valve device that is disposed in a plasma processing apparatus that has an opening for loading and unloading a substrate into and from a processing chamber and performs plasma processing on the substrate by using plasma generated in the processing chamber. A drive unit that drives a valve body is provided below a housing in which a substrate transfer opening is formed. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-81633 A Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a gate valve device and a semiconductor manufacturing apparatus that reduce the volume of a drive unit that drives a valve body. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, there is provided a gate valve device comprising: a housing having an opening, a valve body that opens and closes the opening, and a drive unit that drives the valve body, wherein the drive unit has a first crankshaft having a first input shaft rotatably supported on a side wall of the housing and a first output shaft rotatably supported on the valve body, a second crankshaft having a second input shaft rotatably supported on the side wall of the housing and a second output shaft rotatably supported on the valve body, a rotation transmission unit that transmits rotation of the first input shaft to the second input shaft, and an actuator that rotates the first input shaft. Effect of the Invention

[0006] According to one aspect, it is possible to provide a gate valve device and a semiconductor manufacturing apparatus that reduce the volume of a drive unit that drives a valve body. [Brief description of the drawings]

[0007] [Figure 1] 1 is a diagram showing an example of the overall configuration of a semiconductor manufacturing apparatus according to a first embodiment. [Diagram 2] FIG. 2 is a front view of an example of a gate valve according to the present embodiment. [Diagram 3] FIG. 2 is a front view of an example of a gate valve according to the present embodiment. [Figure 4] FIG. 2 is a cross-sectional view of an example of a gate valve according to the present embodiment. [Diagram 5] FIG. 2 is a cross-sectional view of an example of a gate valve according to the present embodiment. [Figure 6] 2 is an example of a cross-sectional view taken along the line AA of the gate valve according to the embodiment; FIG. [Figure 7] FIG. 2 is a top view of the semiconductor manufacturing apparatus according to the first embodiment, which has the gate valve according to the embodiment. [Figure 8] FIG. 2 is a side view of the semiconductor manufacturing apparatus according to the first embodiment, which has the gate valve according to the embodiment. [Figure 9] FIG. 13 is a diagram showing an example of the overall configuration of a semiconductor manufacturing apparatus according to a second embodiment. [Figure 10] FIG. 11 is a side view of a semiconductor manufacturing apparatus according to a second embodiment, which has a gate valve according to the present embodiment. [Figure 11] FIG. 1 is a side view of a semiconductor manufacturing apparatus having a gate valve according to a reference example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Overall configuration of semiconductor manufacturing apparatus according to the first embodiment] An example of the configuration of a semiconductor manufacturing apparatus 1 according to the first embodiment will be described with reference to Fig. 1. The semiconductor manufacturing apparatus 1 shown in Fig. 1 is an apparatus having a cluster structure (multi-chamber type), and the transfer chamber VTM and the substrate processing chamber PM are examples of vacuum apparatuses.

[0010] The semiconductor manufacturing equipment 1 in FIG. 1 includes substrate processing chambers PM1 to PM6, a transfer chamber VTM (Vacuum Transfer Module), load lock chambers LLM1 and LLM2, a loader module LM (Loader Module), and load ports LP1 to LP3.

[0011] The semiconductor manufacturing equipment 1 is controlled by a control unit 2 and performs a predetermined process on a semiconductor wafer W (hereinafter, also referred to as a "wafer W"), which is an example of a substrate.

[0012] The substrate processing chambers PM1 to PM6 are disposed adjacent to the transfer chamber VTM. The substrate processing chambers PM1 to PM6 are also collectively referred to as the substrate processing chamber PM. The substrate processing chambers PM1 to PM6 and the transfer chamber VTM are communicated with each other by opening and closing a gate valve GV. The substrate processing chambers PM1 to PM6 each have a support 10 that supports a wafer W, and are depressurized to a predetermined vacuum atmosphere, within which the wafer W is subjected to processes such as etching, film formation, cleaning, and ashing.

[0013] A transfer apparatus VA for transferring a wafer W is disposed inside the transfer chamber VTM. The transfer apparatus VA has two robot arms AC and AD that can be bent, extended, and rotated. Picks C and D are attached to the tip of each of the robot arms AC and AD. The transfer apparatus VA can hold a wafer W on each of the picks C and D, and transfers the wafer W between the substrate processing chambers PM1 to PM6 and the transfer chamber VTM in response to the opening and closing of a gate valve GV. The transfer apparatus VA also transfers the wafer W between the transfer chamber VTM and the load lock chambers LLM1 and LLM2 in response to the opening and closing of a gate valve GV.

[0014] The load lock chambers LLM1 and LLM2 are provided between the transfer chamber VTM and the loader module LM. The load lock chambers LLM1 and LLM2 switch between an atmospheric atmosphere and a vacuum atmosphere to transfer a wafer W from the loader module LM on the atmospheric side to the transfer chamber VTM on the vacuum side, and from the transfer chamber VTM on the vacuum side to the loader module LM on the atmospheric side. In the semiconductor manufacturing apparatus 1 according to the first embodiment shown in FIG. 1, the load lock chambers LLM1 and LLM2 are arranged side by side in the horizontal direction (lateral direction) on one side wall of the transfer chamber VTM.

[0015] The loader module LM is provided with load ports LP1 to LP3. FOUPs (Front Opening Unified Pods) containing, for example, 25 wafers W or empty FOUPs are placed on the load ports LP1 to LP3. The loader module LM loads the wafers W removed from the FOUPs in the load ports LP1 to LP3 into either of the load lock chambers LLM1 and LLM2, and loads the wafers W removed from either of the load lock chambers LLM1 and LLM2 into the FOUP.

[0016] The control unit 2 has a central processing unit (CPU) 21, a read only memory (ROM) 22, a random access memory (RAM) 23, and a hard disk drive (HDD) 24. The control unit 2 may have other storage areas such as a solid state drive (SSD) instead of the HDD 24. The HDD 24, the RAM 23, and other storage areas store recipes in which process procedures, process conditions, transport conditions, and the like are set.

[0017] The CPU 21 controls the processing of the wafer W in the substrate processing chamber PM according to a recipe, and controls the transfer of the wafer W. The CPU 21 also controls processes such as gas introduction and exhaust control according to this embodiment, and particle measurement, etc. The HDD 24 and the RAM 23 may store programs for executing, for example, a substrate transfer process, a cleaning process, an exhaust control process, etc. These programs may be provided by being stored in a storage medium, or may be provided from an external device via a network.

[0018] The numbers of substrate processing chambers PM, load lock chambers LLM and load ports LP are not limited to those shown in this embodiment, but may be one or more.

[0019] With this configuration, the semiconductor manufacturing equipment 1 can attach FOUPs containing wafers W or empty FOUPs to the load ports LP1 to LP3. The semiconductor manufacturing equipment 1 can also remove unprocessed wafers W contained in the FOUPs from the FOUPs and transport them to each of the substrate processing chambers PM1 to PM6 via the loader module LM, the load lock chambers LLM1 and LLM2, and the transfer chamber VTM. The semiconductor manufacturing equipment 1 can also perform desired processing on the wafers W in each of the substrate processing chambers PM1 to PM6. The semiconductor manufacturing equipment 1 can also remove processed wafers W from each of the substrate processing chambers PM1 to PM6 and transport them to a FOUP via the transfer chamber VTM, the load lock chambers LLM1 and LLM2, and the loader module LM.

[0020] Next, the gate valve GV according to this embodiment will be described with reference to Figs. 2 to 6. Figs. 2 and 3 are an example of a front view of the gate valve GV according to this embodiment. Figs. 4 and 5 are an example of a cross-sectional view of the gate valve GV according to this embodiment. Fig. 6 is an example of an AA cross-sectional view of the gate valve GV according to this embodiment. Figs. 2 and 4 show a state in which the opening 101a is opened, and Figs. 3 and 5 show a state in which the opening 101a is closed. Also, Fig. 6 shows the position of the valve body 110 in a state in which the opening 101a is closed by a solid line, and the position of the valve body 110 in a state in which the opening 101a is opened by a two-dot chain line.

[0021] The gate valve GV is a square gate valve. The gate valve GV is provided between the transfer chamber VTM and the chambers (substrate processing chambers PM1 to PM6, load lock chambers LLM1, LLM2) arranged adjacent to the transfer chamber VTM. The gate valve GV according to this embodiment may be applied as a door valve (not shown) provided between the loader module LM and the load lock chambers LLM1, LLM2. The gate valve GV has a housing 100, a valve body 110, and a drive unit 120. The drive units 120 are provided on the left and right of the valve body 110.

[0022] The housing 100 houses the valve body 110. The housing 100 has a shielding wall 101 with an opening 101a formed therein. The shielding wall 101 is disposed so as to shield one chamber (e.g., transfer chamber VTM) from the other chamber (e.g., substrate processing chambers PM1 to PM6, load lock chambers LLM1, 2). The opening 101a is formed in a rectangular shape with a horizontal direction as a long side and a vertical direction as a short side when viewed from the front side (see FIGS. 2 and 3) so that picks C and D holding a wafer W can be transferred.

[0023] The housing 100 has side walls 102 on the left and right sides in the horizontal direction when viewed from the front side (see FIGS. 2 and 3). A drive unit housing section 121 that houses the orthogonal transmission 150 and actuator 160 of the drive unit 120 is provided on the outer side of the side walls 102.

[0024] The valve body 110 is provided in the housing 100 and opens and closes the opening 101a. That is, the valve body 110 is provided to be movable between a closing position where the opening 101a is closed (see the valve body 110 shown by solid lines in Figs. 3, 5, and 6) and an opening position where the opening 101a is opened (see the valve body 110 shown by two-dot chain lines in Figs. 2, 4, and 6). In addition, a seal member (not shown) is provided on the surface of the valve body 110 that comes into contact with the shielding wall 101. This allows the opening 101a to be closed by the valve body 110, and the opening 101a to be airtightly closed by pressing the valve body 110 against the shielding wall 101.

[0025] 4 and 5, the drive unit 120 drives the valve body 110. The drive unit 120 has crankshafts 131 and 132, a rotation transmission unit 140, an orthogonal transmission 150, and an actuator 160.

[0026] The first crankshaft 131 has a first output shaft 131a and a first input shaft 131b. The central axis of the first output shaft 131a and the central axis of the first input shaft 131b are parallel to each other, and there is a distance between the central axis of the first output shaft 131a and the central axis of the first input shaft 131b. The first output shaft 131a is rotatably supported on the upper side surface of the valve body 110. The first output shaft 131a is supported by a bearing (not shown) provided on the valve body 110. The first input shaft 131b penetrates the side wall 102 of the housing 100 and is rotatably supported by a bearing 170 provided on the side wall 102. A seal member 180 is provided between the side wall 102 and the first input shaft 131b, and the inside of the housing 100 is formed airtight.

[0027] The second crankshaft 132 has a second output shaft 132a and a second input shaft 132b. The central axis of the second output shaft 132a and the central axis of the second input shaft 132b are parallel to each other, and there is a distance between the central axis of the second output shaft 132a and the central axis of the second input shaft 132b. The second output shaft 132a is rotatably supported on the lower side surface of the valve body 110. The second output shaft 132a is supported by a bearing (not shown) provided on the valve body 110. The second input shaft 132b penetrates the side wall 102 of the housing 100 and is rotatably supported by a bearing 170 provided on the side wall 102. A seal member 180 is provided between the side wall 102 and the second input shaft 132b, and the inside of the housing 100 is formed airtight.

[0028] The central axis of the first input shaft 131b of the first crankshaft 131 extends horizontally to the left and right when viewed from the front side (see FIGS. 2 and 3). In other words, the central axis of the first input shaft 131b is arranged so as to be parallel to the longitudinal direction of the opening 101a. Moreover, the central axis of the second input shaft 132b of the second crankshaft 132 extends horizontally to the left and right when viewed from the front side (see FIGS. 2 and 3). In other words, the central axis of the second input shaft 132b is arranged so as to be parallel to the longitudinal direction of the opening 101a.

[0029] Further, the first input shaft 131b of the first crankshaft 131 and the second input shaft 132b of the second crankshaft 132 are disposed vertically spaced apart from each other.

[0030] The rotation transmission unit 140 transmits the rotation of the first input shaft 131b of the first crankshaft 131 to the second input shaft 132b of the second crankshaft 132. The rotation transmission unit 140 has a timing pulley 141 provided on the first input shaft 131b, a timing pulley 142 provided on the second input shaft 132b, and a timing belt 143 provided between the timing pulley 141 and the timing pulley 142. As a result, by rotating the first input shaft 131b, the second input shaft 132b also rotates in synchronization.

[0031] The orthogonal transmission 150 receives rotational motion with a vertical axis as a rotation axis and outputs rotational motion with a horizontal axis as a rotation axis. The orthogonal transmission 150 may be a reducer. The input side of the orthogonal transmission 150 is connected to the rotation shaft of the actuator 160, and the output side is connected to the first input shaft 131b of the first crankshaft 131.

[0032] The actuator 160 rotates the first input shaft 131b via the orthogonal transmission 150. The actuator 160 is, for example, a rotary actuator such as a motor. The rotary shaft of the actuator 160 extends in a vertical direction when viewed from the front side (see FIGS. 2 and 3). That is, the actuator 160 is disposed so that the rotary shaft of the actuator 160 and the first input shaft 131b of the first crankshaft 131 are perpendicular to each other.

[0033] In addition, in Figures 4 and 5, we have described the drive unit 120 provided on the left side when viewing the gate valve GV from the front side (see Figures 2 and 3), but the same applies to the drive unit 120 provided on the right side, so duplicated explanations will be omitted.

[0034] The orthogonal transmission 150 and the actuator 160 may be provided on only one of the drive units 120 provided on the left and right sides.

[0035] Here, the actuator 160 is rotated in one direction, and the first input shaft 131b of the first crankshaft 131 is rotated in one direction (clockwise as viewed in FIG. 6). As a result, the second input shaft 132b of the second crankshaft 132 is also rotated in one direction (clockwise as viewed in FIG. 6) via the rotation transmission part 140.

[0036] Therefore, the first output shaft 131a of the first crankshaft 131 rotates clockwise around the first input shaft 131b as a rotation axis, and the second output shaft 132a of the second crankshaft 132 rotates clockwise around the second input shaft 132b as a rotation axis. This causes the valve body 110 to move along an arc as shown by the arrow in Fig. 6, and the valve body 110 can be moved from the closed position to the open position. That is, the opening 101a can be opened.

[0037] Moreover, the actuator 160 is rotated in a direction opposite to the one direction, and the first input shaft 131b of the first crankshaft 131 is rotated in the opposite direction (counterclockwise as viewed from the direction of FIG. 6). As a result, the second input shaft 132b of the second crankshaft 132 is also rotated in the opposite direction (counterclockwise as viewed from the direction of FIG. 6) via the rotation transmission part 140.

[0038] Therefore, the first output shaft 131a of the first crankshaft 131 rotates counterclockwise around the first input shaft 131b as a rotation axis, and the second output shaft 132a of the second crankshaft 132 rotates counterclockwise around the second input shaft 132b as a rotation axis. This causes the valve body 110 to move along an arc in the opposite direction to the arrow shown in Fig. 6, and the valve body 110 can be moved from the open position to the closed position. That is, the opening 101a can be closed by the valve body 110.

[0039] Then, by further rotating the actuator 160 in the opposite direction, the valve body 110 can be pressed against the shielding wall 101 in which the opening 101a is formed, thereby air-tightly closing the opening 101a.

[0040] In this manner, according to the gate valve GV of this embodiment, a single actuator 160 can be used to open and close the valve body 110, and also to press the valve body 110 against the shielding wall 101 in which the opening 101a is formed.

[0041] As shown in FIG. 6, the processing vessel 300 of the substrate processing chambers PM1 to PM6 or the load lock chambers LLM1 and LLM2 has a vessel opening 301a for loading and unloading the wafer W into and out of the processing vessel 300. The processing vessel 300 is formed of a metal material such as aluminum whose inside is anodized (alumite treated), and is electrically grounded. The housing 100 of the gate valve GV has a valve seat plate 103 as a valve body receiving member. The valve seat plate 103 is disposed around the vessel opening 301a on the outer side of the side wall of the processing vessel 300. The valve seat plate 103 has a frame shape and has an opening 101a that is approximately the same size as the vessel opening 301a. The size of the opening 101a is preferably the same as or larger than the vessel opening 301a. The valve seat plate 103 is disposed so that the opening 101a and the vessel opening 301a communicate with each other. The valve seat plate 103 is made of a conductive material such as a metal. The valve seat plate 103 is interposed between the valve body 110 and the processing vessel 300 in a state in which the valve body 110 closes the opening 101a and the vessel opening 301a.

[0042] An O-ring 211 is attached to the valve seat plate 103 as a first airtight sealing member. The O-ring 211 is fitted into a groove (not shown) formed in the valve seat plate 103. The O-ring 211 is provided so as to surround the entire circumference of the opening 101a of the valve seat plate 103. The O-ring 211 is sandwiched between the valve body 110 and the valve seat plate 103 in a state in which the opening 101a and the container opening 301a are closed by the valve body 110. In this way, the O-ring 211 is interposed between the valve body 110 and the valve seat plate 103 to airtightly seal the gap therebetween in a state in which the opening 101a and the container opening 301a are closed by the valve body 110. The O-ring 211 can also be provided on the valve body 110 side.

[0043] A shield ring 212 is attached to the valve seat plate 103 as a first conductive member. The shield ring 212 is fitted into a groove (not shown) formed in the valve seat plate 103. The shield ring 212 is made of a conductive material such as metal, and is provided so as to surround the entire circumference of the opening 101a of the valve seat plate 103. The shield ring 212 is sandwiched between the valve body 110 and the valve seat plate 103 in a state in which the opening 101a and the container opening 301a are closed by the valve body 110. In this way, the shield ring 212 is interposed between the valve body 110 and the valve seat plate 103 and electrically connects them in a state in which the opening 101a and the container opening 301a are closed by the valve body 110. Here, electrically connecting means that an electric charge moves between the connected members to make the potentials equal. The shield ring 212 can also be provided on the valve body 110 side.

[0044] The O-ring 211 is provided so as to surround the entire circumference of the opening 101a of the valve seat plate 103, and further, the shield ring 212 is disposed so as to surround the outside of the O-ring 211. Note that the arrangement of the O-ring 211 and the shield ring 212 may be reversed. That is, the shield ring 212 may be provided so as to surround the entire circumference of the opening 101a of the valve seat plate 103, and the O-ring 211 may be provided so as to surround the outside of the shield ring 212.

[0045] An O-ring 221 is attached to the valve seat plate 103 as a second airtight sealing member. The O-ring 221 is fitted into a groove (not shown) formed in the valve seat plate 103. The O-ring 221 is provided to surround the entire circumference of the vessel opening 301a. The O-ring 221 is sandwiched between the valve seat plate 103 and the surface of the sidewall of the processing vessel 300 surrounding the vessel opening 301a. In this manner, the O-ring 221 is interposed between the valve seat plate 103 and the processing vessel 300 to airtightly seal the gap therebetween. The O-ring 221 can also be provided on the sidewall of the processing vessel 300.

[0046] A shield ring 222 as a second conductive member is attached to the valve seat plate 103. The shield ring 222 is fitted into a groove (not shown) formed in the valve seat plate 103. The shield ring 222 is made of a conductive material such as metal, and is provided to surround the entire circumference of the vessel opening 301a. The shield ring 222 is sandwiched between the valve seat plate 103 and a surface of the sidewall of the processing vessel 300 surrounding the vessel opening 301a. In this manner, the shield ring 222 is interposed between the valve seat plate 103 and the processing vessel 300 to electrically connect them. The shield ring 222 can also be provided on the sidewall side of the processing vessel 300.

[0047] The O-ring 221 is provided so as to surround the entire circumference of the opening 101a of the valve seat plate 103 and the container opening 301a, and further, the shield ring 222 is disposed so as to surround the outside of the O-ring 221. Note that the arrangement of the O-ring 221 and the shield ring 222 may be reversed. That is, the shield ring 222 may be provided so as to surround the entire circumference of the opening 101a of the valve seat plate 103 and the container opening 301a, and the O-ring 221 may be provided so as to surround the outside of the shield ring 222.

[0048] The shield ring 212, which is the first conductive member, and the shield ring 222, which is the second conductive member, may be any member having an electromagnetic wave shielding function. As the shield rings 212 and 222, it is preferable to use a spiral spring gasket formed by forming a thin metal plate such as stainless steel into a spiral shape.

[0049] As described above, when the opening 101a and the container opening 301a are closed by the valve body 110, the two O-rings 211 and 221 airtightly seal between the processing vessel 300, the valve seat plate 103, and the valve body 110, thereby maintaining the airtightness of the processing vessel 300. When the opening 101a and the container opening 301a are closed by the valve body 110, the two shield rings 212 and 222 ensure conduction between the processing vessel 300, the valve seat plate 103, and the valve body 110, and electrically connect them. Thus, when the opening 101a and the container opening 301a are closed by the valve body 110, the valve body 110 is at the ground potential like the processing vessel 300.

[0050] Here, when the processing vessel 300 is one of the substrate processing chambers PM1 to PM6 in which plasma processing is performed on the wafer W, if the valve body 110 made of a metal such as aluminum is in an electrically floating state, there is a risk of abnormal discharge or localized plasma generation near the valve body 110 during plasma processing. In response to this, the gate valve GV ensures conduction between the valve body 110 and the processing vessel 300 by interposing the valve seat plate 103 and two shield rings 212, 222 while the opening 101a and the vessel opening 301a are closed by the valve body 110, thereby preventing abnormal discharge and localized plasma generation.

[0051] Moreover, the valve seat plate 103 and the two shield rings 212, 222 are both made of the same kind of metal material. Here, "the same kind of metal material" means that a) the main elements contained are the same, b) the types of elements contained are preferably the same, and c) the types of elements contained are the same and the content ratios are more preferably the same. In the case of the above a), "the main elements" means, for example, elements contained in the metal material at 70 mass% or more, and elements contained in trace amounts may be different in kind. In the case of the above b), the content ratios of the elements may be different. The valve seat plate 103 and the two shield rings 212, 222 are made of, for example, stainless steel. By using the same kind of metal material for the valve seat plate 103 and the two shield rings 212, 222, the generation of metal particles can be suppressed.

[0052] Fig. 7 is an example of a view of the semiconductor manufacturing apparatus 1 according to the first embodiment having the gate valve GV according to the present embodiment, as seen from above. Fig. 8 is an example of a view of the semiconductor manufacturing apparatus 1 according to the first embodiment having the gate valve GV according to the present embodiment, as seen from the side. Here, as an example of the gate valve GV, a gate valve GV provided between the transfer chamber VTM and the load lock chambers LLM1, LLM2 will be described.

[0053] 1, 7 and 8, in a semiconductor manufacturing apparatus 1 according to the first embodiment, load lock chambers LLM1 and LLM2 are provided in a horizontal direction (lateral direction).

[0054] 4 and 5, the gate valve GV is provided with an orthogonal transmission 150, so that the axial direction of the actuator 160 can be made vertical. This makes it possible to reduce the width of the gate valve GV in the left-right direction. Therefore, as shown in FIG. 7, in a configuration in which the load lock chambers LLM1 and LLM2 are arranged horizontally, it is possible to prevent interference between the gate valve GV provided between the load lock chamber LLM1 and the transfer chamber VTM and the gate valve GV provided between the load lock chamber LLM2 and the transfer chamber VTM.

[0055] Furthermore, as shown in FIG. 8, the gate valve GV can have the drive unit housing 121 provided on the side surface of the housing 100, so that the height of the gate valve GV can be reduced.

[0056] Furthermore, the gate valve GV of this embodiment can perform the opening and closing operation of the valve body 110 and the operation of pressing the valve body against the shielding wall 101 by the rotational motion of the crankshafts 131 and 132. This makes it possible to drive the valve body 110 without using a complicated operating mechanism.

[0057] Moreover, in the gate valve GV of this embodiment, the force pressing the valve body 110 against the shielding wall 101 can be controlled by the actuator 160.

[0058] 7 and 8, the semiconductor manufacturing apparatus 1 has been described with two chambers (load lock chambers LLM1, LLM2) arranged in a horizontal direction (lateral direction), but this is not limited to this. The semiconductor manufacturing apparatus 1 may include multiple chambers, at least two of which may be arranged in a horizontal direction (lateral direction).

[0059] [Overall configuration of semiconductor manufacturing apparatus according to the second embodiment] Next, a semiconductor manufacturing apparatus 1A according to a second embodiment having a gate valve GV according to this embodiment will be described. Fig. 9 is a diagram showing an example of the overall configuration of the semiconductor manufacturing apparatus 1A according to the second embodiment.

[0060] The semiconductor manufacturing apparatus 1A according to the second embodiment includes substrate processing chambers PM1-PM6, a transfer chamber VTM, load lock chambers LLM1, LLM2, a loader module LM, and load ports LP1-LP3. Here, in the semiconductor manufacturing apparatus 1A according to the second embodiment, the load lock chambers LLM1, LLM2 are arranged side by side in the vertical direction (longitudinal direction) on one side wall of the transfer chamber VTM. The other configuration is similar to that of the semiconductor manufacturing apparatus 1 according to the second embodiment (see FIG. 1), and therefore repeated explanations will be omitted.

[0061] Fig. 10 is an example of a side view of a semiconductor manufacturing apparatus 1A according to a second embodiment having a gate valve GV according to this embodiment. Fig. 11 is an example of a side view of a semiconductor manufacturing apparatus 1A according to a second embodiment having a gate valve GV according to a reference example. Here, as an example of the gate valve GV, a gate valve GV provided between the transfer chamber VTM and the load lock chambers LLM1 and LLM2 will be described.

[0062] 9, 10 and 11, in a semiconductor manufacturing apparatus 1A according to the second embodiment, the load lock chambers LLM1 and LLM2 are provided in the vertical direction (longitudinal direction).

[0063] Here, the gate valve GV according to the reference example has a linear actuator (not shown) that moves the valve body in a direction to open and close. Therefore, in the reference example, the gate valve GV provided in the lower load lock chamber LLM1 has the drive unit housing 121 provided below the housing 100, as shown in Fig. 11. Also, the gate valve GV provided in the upper load lock chamber LLM2 has the drive unit housing 121 provided above the housing 100.

[0064] 11, the cover member 3 of the semiconductor manufacturing equipment 1 of the reference example is placed at a high position. Alternatively, it is necessary to provide a protruding portion (not shown) on the cover member 3. This increases the overall volume of the semiconductor manufacturing equipment 1A.

[0065] 10, in this embodiment, the gate valve GV provided in the lower load lock chamber LLM1 has the drive unit housing 121 provided on the side of the housing 100. Also, the gate valve GV provided in the upper load lock chamber LLM2 has the drive unit housing 121 provided on the side of the housing 100.

[0066] 10, the cover member 3 of the semiconductor manufacturing equipment 1A of this embodiment can be placed at a lower position than in the reference example. Also, the cover member 3 can be made flat without providing a protruding portion (not shown). This makes it possible to reduce the overall volume of the semiconductor manufacturing equipment 1A.

[0067] 9 and 10, the semiconductor manufacturing apparatus 1 has been described with two chambers (load lock chambers LLM1, LLM2) arranged in a vertical direction (lengthwise direction), but this is not limited to this. The semiconductor manufacturing apparatus 1 may include multiple chambers, at least two of which may be arranged in a vertical direction (lengthwise direction).

[0068] In addition, the gate valve GV is provided between the substrate processing chambers PM1 to PM6 and the transfer chamber VTM, and between the load lock chambers LLM1, LLM2 and the transfer chamber VTM, but is not limited to this. In a configuration in which the semiconductor manufacturing apparatus 1 includes a transfer chamber other than the transfer chamber VTM and the transfer chamber VTM is adjacent to the other transfer chamber, the gate valve GV of this embodiment may be provided between the transfer chamber VTM and the other transfer chamber.

[0069] The above describes embodiments of the gate valve, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0070] GV Gate Valve (Gate Valve Device) 1. 1A Semiconductor manufacturing equipment 100 Case 101 Shielding wall 101a opening 102 Side wall 103 Valve seat plate 110 Valve body 120 Drive unit 121 Drive unit housing 131 First crankshaft 132 Second crankshaft 131a 1st output shaft 131b First input shaft 132a Second output shaft 132b Second input shaft 140 Rotation transmission part 141 Timing pulley 142 Timing pulley 143 Timing belt 150 Orthogonal transmission 160 Actuator 170 Bearings 180 Sealing material 211 O-ring (first airtight sealing member) 212 Shield ring (first conductive member) 221 O-ring (second airtight sealing member) 222 Shield ring (second conductive member) 300 Processing vessel 301a Container opening VTM Transport Room PM1~PM6 Substrate processing room LLM1, LLM2 Load Lock Chambers

Claims

1. A housing having an opening; A valve body that opens and closes the opening; A drive unit that drives the valve body, The drive unit is a first crankshaft including a first input shaft rotatably supported by a side wall of the housing and a first output shaft rotatably supported by the valve body; a second crankshaft including a second input shaft rotatably supported by a side wall of the housing and a second output shaft rotatably supported by the valve body; a rotation transmission unit that transmits rotation of the first input shaft to the second input shaft; an actuator that rotates the first input shaft, The first output shaft and the second output shaft are disposed vertically spaced apart from each other on a side surface of the valve body, The first input shaft and the second input shaft are vertically spaced apart from each other on a side wall of the housing. Gate valve device.

2. A housing having an opening; A valve body that opens and closes the opening; A drive unit that drives the valve body, The drive unit is a first crankshaft including a first input shaft rotatably supported by a side wall of the housing and a first output shaft rotatably supported by the valve body; a second crankshaft including a second input shaft rotatably supported by a side wall of the housing and a second output shaft rotatably supported by the valve body; a rotation transmission unit that transmits rotation of the first input shaft to the second input shaft; an actuator that rotates the first input shaft, The longitudinal direction of the opening is defined as a first direction, and the lateral direction of the opening is defined as a second direction. the first input shaft, the first output shaft, the second input shaft, and the second output shaft are arranged parallel to the first direction, the first output shaft and the second output shaft are disposed on a side surface of the valve body and spaced apart from each other in the second direction, The first input shaft and the second input shaft are disposed on a side wall of the housing and spaced apart from each other in the second direction. Gate valve device.

3. a conductive valve body receiving member having an opening communicating with a container opening through which a substrate is loaded into and unloaded from a processing container, the conductive valve body receiving member being interposed between the valve body and the processing container in a state in which the opening is closed by the valve body; a first airtight sealing member that is interposed between the valve body and the valve body receiving member and airtightly seals the gap therebetween in a state in which the opening is closed by the valve body; a first conductive member interposed between the valve body and the valve body receiving member to electrically connect them in a state in which the opening is closed by the valve body; a second airtight sealing member provided to surround the opening and interposed between the valve body receiving member and the processing vessel to airtightly seal the gap therebetween; a second conductive member provided to surround the opening and interposed between the valve body receiving member and the processing vessel to electrically connect them; The gate valve device according to claim 1 or 2.

4. The first conductive member and the second conductive member are formed of the same material. The gate valve device according to claim 3 .

5. the first conductive member is provided so as to surround the first hermetic sealing member in a state in which the opening is closed by the valve body. The gate valve device according to claim 3 or 4.

6. the second conductive member is provided so as to surround the second hermetic sealing member; The gate valve device according to any one of claims 3 to 5.

7. The first and second hermetic sealing members are made of O-rings. The gate valve device according to any one of claims 3 to 6.

8. The drive unit is The rotation shaft of the actuator and the first input shaft are disposed perpendicular to each other, The transmission further includes an orthogonal transmission that receives the rotation of the rotary shaft of the actuator and outputs the rotation to the first input shaft. The gate valve device according to any one of claims 1 to 7.

9. A transport room; A chamber disposed adjacent to the transfer chamber; and a gate valve device according to any one of claims 1 to 8, which is provided between the transfer chamber and the chamber. Semiconductor manufacturing equipment.

10. The chamber is a substrate processing chamber or a load lock chamber. The semiconductor manufacturing apparatus according to claim 9.

11. The chamber is another transport chamber different from the transport chamber. The semiconductor manufacturing apparatus according to claim 9.

12. The semiconductor manufacturing equipment includes a plurality of the chambers, At least two of the chambers are arranged in a horizontal direction.

12. The semiconductor manufacturing apparatus according to claim 9.

13. The semiconductor manufacturing equipment includes a plurality of the chambers, At least two of the chambers are vertically arranged.

12. The semiconductor manufacturing apparatus according to claim 9.

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