Apparatus and method for depositing film

Abstract

To provide an apparatus and a method for depositing a film that can prevent detachment of a sputtered particle deposition film in magnetron sputtering.SOLUTION: A film deposition apparatus includes a chamber, a target mechanism, a deposition preventive plate, and a floating shield. The target mechanism includes: a rotary target disposed in the chamber and including a cylindrical target surface around a central axis; and a magnet forming a magnetic field in the target surface. The deposition preventive plate is disposed between an end of the rotary target and the chamber to prevent a target material from adhering to the chamber. The floating shield is at least partially disposed between the deposition preventive plate and the rotary target and has floating potential, where a part between the deposition preventive plate and the rotary target has a temperature that is higher than 50°C while a plasma is generated on the target surface.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a film formation apparatus and a film formation method by magnetron sputtering using a rotary target. [Background technology]

[0002] In sputtering, a sputtering gas is introduced into a vacuum and then turned into plasma by discharging the sputtering gas, and the ions generated collide with a target to generate sputter particles, which are then deposited on the object to be deposited. In magnetron sputtering, a magnet placed near the target is used to surround electrons in a magnetic field, creating a high-density plasma region near the target, and the ions are efficiently collided with the target, making it possible to speed up deposition (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-200520 A Summary of the Invention [Problem to be solved by the invention]

[0004] In a magnetron sputtering device such as that described in Patent Document 1, sputtered particles also adhere to the periphery of the object to be film-formed, resulting in a deposited film. If such a sputtered particle deposited film is peeled off due to vibration, heat, electromagnetic force, or the like, it will adhere to the object to be film-formed, and this will have a significant effect on product yield. In particular, if the sputtered particle deposited film has low density, it will easily peel off due to thermal expansion of the member accompanying sputtering, which can be problematic.

[0005] In view of the above circumstances, an object of the present invention is to provide a film forming apparatus and a film forming method capable of preventing peeling of a film deposited by sputtered particles during magnetron sputtering. [Means for solving the problem]

[0006] In order to achieve the above object, a film formation apparatus according to one aspect of the present invention includes a chamber, a target mechanism, an adhesion prevention plate, and a floating shield. The target mechanism is disposed within the chamber and includes a rotary target having a cylindrical target surface around a central axis, and a magnet that forms a magnetic field on the target surface. The adhesion shield is disposed between an end of the rotary target and the chamber to prevent adhesion of target material to the chamber. The floating shield is a floating shield having a floating potential, at least a portion of which is disposed between the adhesion plate and the rotary target, and when discharge power is supplied to the rotary target and plasma of the sputtering gas supplied into the chamber is generated on the target surface, the temperature of the portion between the adhesion plate and the rotary target is higher than 50°C. A film forming apparatus comprising:

[0007] The distance between the end of the rotary target and the adhesion prevention plate may be greater than 0 mm and less than 130 mm.

[0008] The distance between the end of the rotary target and the adhesion prevention plate may be 10 mm or more and 50 mm or less.

[0009] The distance between an end of the magnet and the adhesion shield may be smaller than the distance between an end of the rotary target and the adhesion shield.

[0010] The distance between the end of the rotary target and the adhesion shield may be greater than 0 mm and less than 130 mm, and the distance between the end of the magnet and the adhesion shield may be smaller than the distance between the end of the rotary target and the adhesion shield.

[0011] The rotary target may be made of ITO (Indium Tin Oxide).

[0012] In order to achieve the above object, a film formation method according to one embodiment of the present invention is a film formation method for performing sputtering film formation on a film formation target using a film formation apparatus including: a target mechanism that is arranged in a chamber and includes a rotary target having a cylindrical target surface around a central axis and a magnet that forms a magnetic field on the target surface; an adhesion prevention plate that is arranged between an end of the rotary target and the chamber and prevents adhesion of a target material to the chamber; and a floating shield that has a floating potential and is at least partially arranged between the adhesion prevention plate and the rotary target, While discharge power is supplied to the rotary target and plasma of the sputtering gas supplied into the chamber is generated on the target surface, the temperature of the area between the adhesion shield and the rotary target is made higher than 50°C. Effect of the Invention

[0013] As described above, according to the present invention, it is possible to provide a film formation apparatus and a film formation method capable of preventing peeling of a film deposited by sputtered particles during magnetron sputtering. [Brief description of the drawings]

[0014] [Figure 1] 1 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic diagram of the film forming apparatus. [Diagram 3] FIG. 2 is a perspective view of a target mechanism included in the film forming apparatus. [Figure 4] FIG. 2 is a cross-sectional view of the target mechanism. [Diagram 5] FIG. 1 is a schematic diagram showing the arrangement of magnets in the target mechanism. [Figure 6] 2 is a cross-sectional view of the vicinity of a floating shield of the film forming apparatus. FIG. [Figure 7] FIG. 2 is a schematic diagram of magnetron sputtering using the above-mentioned film forming apparatus. [Figure 8]FIG. 2 is a schematic diagram of magnetron sputtering using the above-mentioned film forming apparatus. [Figure 9] 3 is a schematic diagram of a deposition film of sputtered particles in the film forming apparatus. FIG. [Figure 10] 5 is a schematic diagram of a deposited film of sputtered particles in a film forming apparatus according to a comparative example. FIG. [Figure 11] 1 is a schematic diagram showing a specific configuration of a film forming apparatus according to an embodiment of the present invention. [Figure 12] 1 is a schematic diagram showing a specific configuration of a film forming apparatus according to an embodiment of the present invention. [Figure 13] FIG. 13 is a schematic diagram showing a specific configuration of a film forming apparatus according to a modified example of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0016] [About the deposition equipment] A film formation apparatus according to this embodiment will be described. Figures 1 and 2 are schematic diagrams of a film formation apparatus 100 according to this embodiment. As shown in Figures 1 and 2, the film formation apparatus 100 includes a vacuum chamber 101, a target mechanism 102, a floating shield 103, an end protection plate 104, a rear protection plate 105, a gas introduction unit 106, a substrate holder 107, and a drive control unit 108. A substrate S, which is an object to be film-formed, is attached to the substrate holder 107.

[0017] Vacuum chamber 101 defines therein a sputtering space 111. A gas supply system 112 and an exhaust system 113 are connected to vacuum chamber 101. Gas supply system 112 is connected to gas inlet 106 and supplies sputtering gas to gas inlet 106. Exhaust system 113 is connected to a vacuum pump (not shown) and evacuates sputtering space 111 to a vacuum.

[0018] The target mechanism 102 is disposed in the sputtering space 111 and generates sputtered particles. FIG. 3 is a perspective view of the target mechanism 102, and FIG. 4 is a cross-sectional view of the target mechanism 102. As shown in FIG. 3, the target mechanism 102 extends along a central axis C (Z direction). As shown in FIG. 2, the film forming apparatus 100 has a plurality of target mechanisms 102, the number of which is not particularly limited. The target mechanisms 102 are disposed such that their respective central axes C are parallel to each other. The film forming apparatus 100 may also include only one target mechanism 102.

[0019] 4, the target mechanism 102 includes a backing tube 121, a rotary target 122, and a magnet unit 123. The backing tube 121 has a cylindrical shape centered on a central axis C. The backing tube 121 is connected to a sputtering power supply 131 (see FIG. 1) and functions as a cathode.

[0020] The rotary target 122 is stacked on the outer peripheral surface of the backing tube 121 and configured to be rotatable around the central axis C by a rotation mechanism (not shown). The rotary target 122 has a cylindrical target surface 122a around the central axis C. Hereinafter, as shown in FIG. 3, an end of the rotary target 122 in the extension direction (Z direction) of the central axis C is referred to as an end 122b. The rotary target 122 is made of a target material, and the target material is, for example, ITO (Indium Tin Oxide). In addition, the target material may be an oxide semiconductor such as IGZO (Indium Gallium Zinc Oxide), IZO (Indium Zinc Oxide), ITO (Indium Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), or IATO (Indium Aluminum Tin Oxide).

[0021] The magnet unit 123 is disposed in the backing tube 121 as shown in Fig. 4, and is configured to be rotatable about a central axis C by a rotation mechanism (not shown). As shown in the figure, the magnet unit 123 includes a yoke 124 and a magnet 125. The magnet 125 forms a magnetic field on the target surface 122a. Specifically, the magnet 125 includes an N-pole magnet 126 and an S-pole magnet 127, and the N-pole magnet 126 and the S-pole magnet 127 are disposed so as to face the rotary target 122 from inside the backing tube 121.

[0022] 5 is a schematic diagram showing the arrangement of magnets 125 in the target mechanism 102. As shown in the figure, the N-pole magnet 126 surrounds the S-pole magnet 127, and the N-pole magnet 126 and the S-pole magnet 127 have a length equal to that of the rotary target 122 along the extension direction (Z direction) of the central axis C. Hereinafter, the end of the magnet 125 in the extension direction (Z direction) of the central axis C will be referred to as end 125a. Note that the magnetic poles of the N-pole magnet 126 and the S-pole magnet 127 may be opposite.

[0023] The floating shield 103 is disposed at both ends of each target mechanism 102 and has a floating potential. Fig. 6 is a cross-sectional view of the vicinity of the floating shield 103 of the film forming apparatus 100. As shown in the figure, the floating shield 103 has a cylindrical shape and is disposed around the backing tube 121 at the end of the target mechanism 102. The floating shield 103 is separated from the backing tube 121 and is insulated from the backing tube 121. Although Fig. 6 shows one end of the target mechanism 102, a similar floating shield 103 is provided at the opposite end.

[0024] 6, the portion of the floating shield 103 between the end adhesion prevention plate 104 and the rotary target 122 is the deposition target portion 103a. The floating shield 103 is configured so that the temperature of the deposition target portion 103a becomes higher than 50° C. during magnetron sputtering. This will be described in detail later.

[0025] 1, the end adhesion protection plate 104 is disposed between the end 122b of the rotary target 122 and the inner wall of the vacuum chamber 101, and prevents adhesion of sputtered particles to the inner wall of the vacuum chamber 101. The end adhesion protection plate 104 is also connected to a sputtering power supply 131 and functions as an anode. As shown in FIG. 6, the end adhesion protection plate 104 has an opening 104a, through which the backing tube 121 and the floating shield 103 are inserted.

[0026] The rear adhesion shield 105 is disposed between the inner wall of the vacuum chamber 101 on the side opposite to the substrate S and the target mechanism 102, and prevents sputtering particles from adhering to the vacuum chamber 101. The rear adhesion shield 105 is also connected to a sputtering power supply 131 and functions as an anode.

[0027] The gas inlet 106 discharges a sputtering gas supplied from a gas supply system 112 (see FIG. 1) into the sputtering space 111. This sputtering gas includes a sputtering gas and a reactive gas. The sputtering gas is a gas that is ionized by discharge, such as Ar. The reactive gas is a gas that chemically reacts with particles of the target material generated by the collision of the ions, such as O. 2 The gas inlet 106 may be provided on the rear adhesion prevention plate 105 as shown in FIG.

[0028] The substrate holder 107 is provided in the sputtering space 111 and holds the substrate S. The configuration of the substrate holder 107 is not particularly limited as long as it is capable of holding the substrate S. A floating mask that covers the peripheral portion of the substrate S may be provided on the peripheral portion of the substrate S.

[0029] The drive control unit 108 includes a sputtering power supply 131 and a rotation drive source 132. The sputtering power supply 131 is a power supply for discharging power supplied to the target mechanism 102, and may be a DC (Direct Current) power supply or a high-frequency power supply such as an RF (Radio Frequency) power supply or a VHF (Very High Frequency) power supply. The rotation drive source 132 drives a rotation mechanism of the rotary target 122 and the magnet unit 123, and controls the rotation angle of the magnet unit 123.

[0030] The film forming apparatus 100 has the above-mentioned configuration. The film forming apparatus 100 may have other configurations instead of or in addition to the above-mentioned configurations.

[0031] [Film formation method] A film formation method using the film formation apparatus 100 will be described. Figures 7 and 8 are schematic diagrams showing the film formation method using the film formation apparatus 100. In this film formation method, first, the sputtering space 111 is evacuated to a vacuum by the exhaust system 113 (see Figure 1). After the sputtering space 111 is sufficiently depressurized, a sputtering gas is released from the gas inlet .

[0032] Next, while rotating the rotary target 122 provided in each target mechanism 102, the supply of discharge power to each target mechanism 102 is started. The sputtering gas is converted into plasma by this discharge power. This plasma is confined within the magnetic field generated by the magnet 125, forming a high-density plasma P as shown in FIG.

[0033] As shown in Fig. 8, ions A forming high-density plasma P collide with target surface 122a, scattering sputtered particles R, which are particles of the target material. The scattered sputtered particles R react with the reactive gas and deposit on substrate S to form a film. Supply of discharge power is continued in this state until the film thickness reaches the desired thickness. During film formation, the magnet unit 123 is swung around central axis C (see Fig. 4) to change the orientation of high-density plasma P, making it possible to uniformize the film quality and film thickness distribution.

[0034] The above is how the film is formed by the film forming apparatus 100. The above-described film forming process may be performed by a user using the film forming apparatus 100, or may be performed by the drive control unit 108 controlling the sputtering power supply 131 and the rotation drive source 132.

[0035] [About the deposited film] In magnetron sputtering using the film forming apparatus 100 as described above, sputtered particles R are deposited on the floating shield 103 and the end adhesion prevention plate 104, and a deposition film is generated. FIG. 9 is a schematic diagram showing this deposition film, and the deposition film deposited on the end adhesion prevention plate 104 is shown as an adhesion prevention plate deposition film M1. Also, the deposition film deposited on the deposition target portion 103a of the floating shield 103 is shown as a shield deposition film M2. The adhesion prevention plate deposition film M1 is a film with sufficiently high density and is unlikely to peel off. On the other hand, the shield deposition film M2 is a film with lower density than the adhesion prevention plate deposition film M1, and therefore peeling becomes a problem.

[0036] 10 is a schematic diagram showing a deposited film in a film forming apparatus according to a comparative example. As shown in the figure, the film forming apparatus according to the comparative example includes a target mechanism 202, a floating shield 203, and an end attachment protection plate 204, and the target mechanism 202 includes a backing tube 221, a rotary target 222, and a magnet 225. The end attachment protection plate 204 is farther away from the rotary target 222 than the floating shield 203. The distance K between the end 222b of the rotary target 222 and the end attachment protection plate 204 is, for example, 137 mm.

[0037] When magnetron sputtering is performed in this film formation apparatus, sputtered particles are generated, and as shown in FIG. 10, an adhesion prevention plate deposition film N1 is deposited on the end adhesion prevention plate 204, and a shield deposition film N2 is deposited on the floating shield 103. Here, the adhesion prevention plate deposition film N1 is a film with sufficiently high density and is unlikely to peel off. On the other hand, the shield deposition film N2 is a film with low density and is likely to peel off. When the rotary target 222 is made of ITO, the adhesion prevention plate deposition film N1 is a black film, while the shield deposition film N2 is a yellow film, and the colors are also different.

[0038] Considering the difference between the adhesion prevention plate deposition film N1 and the shield deposition film N2, if there is no scattering of the sputtered particles from the emission angle distribution of the sputtered particles from the rotary target 222, the sputtered particles will not adhere to the floating shield 203. For this reason, it can be said that the sputtered particles that form the shield deposition film N2 have lost energy during the flight process due to scattering.

[0039] Due to this loss of energy, the bonds between the sputtered particles become van der Waals intermolecular bonds, which is thought to result in a low-density shield-deposited film N2. Furthermore, due to the loss of energy, the shield-deposited film N2 does not grow in the in-plane direction, but becomes columnar crystals in one direction, which is thought to result in a film that is easily broken by thermal expansion in the in-plane direction.

[0040] In contrast, the film forming apparatus 100 according to this embodiment (see FIG. 9) is configured so that the temperature of the deposition portion 103a becomes higher than 50° C. during magnetron sputtering. This promotes crystallization of the shield deposition film M2 and improves its density, making it less likely for the shield deposition film M2 to peel off. In addition, the adhesion prevention plate deposition film M1 has sufficient density as described above. Therefore, the film forming apparatus 100 can prevent the adhesion prevention plate deposition film M1 and the shield deposition film M2 from peeling off, and can prevent the impact of this peeling on the product yield.

[0041] [Specific configuration of the film forming apparatus] As described above, the film forming apparatus 100 is configured so that the temperature of the deposition portion 103a becomes higher than 50° C. during magnetron sputtering. A preferred specific configuration is one in which the end 122b of the rotary target 122 and the end adhesion prevention plate 104 are brought close to each other. Fig. 11 is a schematic diagram showing the distance L1 between the end 122b and the end adhesion prevention plate 104. This distance L1 is preferably greater than 0 mm and less than 130 mm.

[0042] If the distance L1 is greater than 0 mm and less than 130 mm, the end adhesion prevention plate 104, which is the anode, approaches the rotary target 122, and the high-density plasma P (see FIG. 8) is attracted toward the floating shield 103, making it possible to make the temperature of the deposition portion 103a greater than 50° C. (see the Examples). On the other hand, if the distance L1 is 130 mm or more, the attraction of the high-density plasma P becomes weak, and the temperature of the deposition portion 103a becomes 50° C. or less. Therefore, it is preferable that the distance L1 is greater than 0 mm and less than 130 mm.

[0043] Furthermore, the distance L1 is preferably 10 mm or more and 50 mm or less. When the distance L1 is 10 mm or more and 50 mm or less, the temperature of the deposition portion 103a becomes 110° C. or more (see Examples), and the density of the shield deposition film is further improved.

[0044] As another specific configuration, the distance between the end 125a of the magnet 125 and the end adhesion protection plate 104 may be made smaller than the distance between the end 122b of the rotary target 122 and the end adhesion protection plate 104. FIG. 12 is a schematic diagram showing the distance L1 between the end 122b and the end adhesion protection plate 104, and the distance L2 between the end 125a and the end adhesion protection plate 104. As shown in the figure, the distance L2 can be made smaller than the distance L1. Even in this configuration, the magnetic field generated by the magnet 125 spreads to the floating shield 103 side, and the high-density plasma P (see FIG. 8) is attracted to the floating shield 103 side, so that the temperature of the deposition portion 103a can be made higher than 50°C.

[0045] In this configuration, the distance L1 may be 130 mm or more, or may be greater than 0 mm and less than 130 mm. However, it is preferable to set the distance L1 to greater than 0 mm and less than 130 mm, since the end adhesion prevention plate 104 approaches the rotary target 122 and the temperature of the deposition portion 103a can be further increased by setting the distance L1 to greater than 0 mm and less than 130 mm.

[0046] [Variations] In the above description, the end protection plate 104 has an opening 104a, and the backing tube 121 and the floating shield 103 are inserted into the opening 104a (see FIG. 6), but this is not limited to the above. FIG. 13 is a cross-sectional view of the vicinity of the floating shield 103 of the film formation apparatus 100 according to a modified example. As shown in the figure, the end protection plate 104 may be spaced farther away from the rotary target 122 than the floating shield 103. Even in this configuration, it is sufficient that the temperature of the deposition portion 103a becomes higher than 50° C. during magnetron sputtering.

[0047] Specifically, the distance L1 between the end 122b and the end attachment plate 104 can be set to a distance greater than 0 mm and less than 130 mm by shortening the length of the floating shield 103, etc. Also, the distance L2 between the end 125a of the magnet 125 and the end attachment plate 104 may be set to be smaller than the distance L1 between the end 122b of the rotary target 122 and the end attachment plate 104. Furthermore, it is also possible to set the distance L2 to be smaller than the distance L1, and to set the distance L1 to a distance greater than 0 mm and less than 130 mm.

[0048] [Embodiments of the present invention] Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made. At least two of the characteristic parts described in the above embodiment can be arbitrarily combined. EXAMPLES

[0049] Film-forming apparatuses according to the examples and comparative examples of the present invention were fabricated, and various measurements were carried out. The following [Table 1] is a table showing the measurement results. In the film-forming apparatuses according to the examples 1 to 3, the distance between the end of the rotary target and the end adhesion prevention plate (distance L1 in FIG. 11) is greater than 0 mm and less than 130 mm. In the film-forming apparatus according to the comparative example 1, the distance is set to 0 mm, and in the film-forming apparatus according to the comparative example 2, the distance is set to 130 mm. In both the examples and comparative examples, the distance between the end of the magnet and the end adhesion prevention plate (distance L2 in FIG. 12) is greater than the distance between the end of the rotary target and the end adhesion prevention plate (distance L1 in FIG. 12).

[0050] [Table 1]

[0051] In the deposition apparatus of each embodiment and each comparative example, ITO (Indium Tin Oxide) was used as the target material, and magnetron sputtering was performed. In Table 1, "power density" refers to the power density of the discharge power supplied to the target mechanism, and "temperature of the deposited portion" refers to the temperature of the deposited portion on the floating shield. "peeling of shield deposition film" refers to the result of a tape peeling test performed on the shield deposition film on the deposited portion. "Deposition area" refers to the length (Z direction) of the area where the shield deposition film is deposited, and is equal to the length of the deposited portion. "Non-erosion area" refers to an area where erosion (erosion by plasma) does not occur in the rotary target, and it is preferable that no erosion area exists because the rotary target is worn evenly.

[0052] As shown in Table 1, in the film deposition apparatus according to Comparative Example 1, a non-erosion region was formed on the rotary target. This was because the end protection plate was too close to the rotary target, and the high-density plasma was attracted to the end protection plate. Also, in the film deposition apparatus according to Comparative Example 2, peeling of the shield deposition film occurred. This was because the temperature of the deposition portion was low at 50°C, and the crystallization of the sputtered particles did not progress.

[0053] In contrast, in the film forming apparatus according to Examples 1 to 3, peeling of the shield deposition film did not occur. This is because the temperature of the deposition portion was as high as 112 to 154°C, and the crystallization of the sputtered particles progressed. It can be seen that the temperature of the deposition portion increases as the distance (distance L1) between the end of the rotary target and the end adhesion prevention plate becomes smaller. The color of the shield deposition film was also yellow in Comparative Example 2, but became closer to black in Examples 1 to 3, becoming closer to the color of the adhesion prevention plate deposition film. From the above, it can be said that it is possible to improve the density of the shield deposition film and prevent peeling by configuring the film forming apparatus so that the temperature of the deposition portion becomes higher than 50°C during magnetron sputtering. [Explanation of symbols]

[0054] 100...Film deposition equipment 101...Vacuum chamber 102...Target mechanism 103…Floating Shield 104…Edge adhesion prevention plate 105…Back attachment prevention plate 121…Backing tube 122...Rotary target 123...Magnet unit 124…York 125…Magnet

Claims

1. A chamber; a target mechanism including a rotary target disposed within the chamber and having a cylindrical target surface around a central axis, and a magnet that forms a magnetic field on the target surface; a shield plate disposed between an end of the rotary target and the chamber to prevent a target material from adhering to the chamber; a floating shield having a floating potential, at least a portion of which is disposed between the adhesion plate and the rotary target, wherein when discharge power is supplied to the rotary target and plasma of a sputtering gas supplied into the chamber is generated on the target surface, the temperature of a portion of the floating shield between the adhesion plate and the rotary target is higher than 50° C.; A film forming apparatus comprising:

2. The film forming apparatus according to claim 1 , The distance between the end of the rotary target and the adhesion prevention plate is greater than 0 mm and smaller than 130 mm. Film deposition equipment.

3. The film forming apparatus according to claim 2, The distance between the end of the rotary target and the adhesion prevention plate is 10 mm or more and 50 mm or less. Film deposition equipment.

4. The film forming apparatus according to claim 1 , The distance between the end of the magnet and the shield is smaller than the distance between the end of the rotary target and the shield. Film deposition equipment.

5. The film forming apparatus according to claim 1 , The distance between the end of the rotary target and the adhesion shield is greater than 0 mm and less than 130 mm, and the distance between the end of the magnet and the adhesion shield is smaller than the distance between the end of the rotary target and the adhesion shield. Film deposition equipment.

6. The film forming apparatus according to claim 1 , The rotary target is made of ITO (Indium Tin Oxide). Film deposition equipment.

7. A film formation method for performing sputtering film formation on a film formation target using a film formation apparatus including: a target mechanism that is disposed in a chamber and includes a rotary target having a cylindrical target surface around a central axis and a magnet that forms a magnetic field on the target surface; an adhesion prevention plate that is disposed between an end of the rotary target and the chamber and prevents a target material from adhering to the chamber; and a floating shield that has a floating potential and is at least partially disposed between the adhesion prevention plate and the rotary target, A discharge power is supplied to the rotary target, and a plasma of the sputtering gas supplied into the chamber is generated on the target surface. In this state, the temperature of the portion between the adhesion shield and the rotary target is increased to a temperature higher than 50° C. Film formation method.

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