Substrate processing device, substrate processing method, and substrate processing program

Abstract

To provide a substrate processing device which is effective for discharging vaporized objects by gas flow and inhibiting the gas flow from affecting a film thickness distribution, and to provide a substrate processing method and a substrate processing program.SOLUTION: A substrate processing device includes: a support part which supports a substrate; a chamber which houses the substrate supported by the support part; and a heater which is provided at the support part so as to heat the substrate supported by the support part. The chamber has: an air supply part which supplies a gas to the substrate supported by the support part from above; an inner wall which encloses the substrate supported by the support part; an outer wall which surrounds the inner wall so as to form an annular enclosed space with the inner wall; an exhaust gap which is formed in an annular shape between the inner wall and the support part and allows an internal space of the inner wall and the enclosed space to communicate with each other; and an exhaust part which exhausts the gas from the enclosed space to the outside of the chamber.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a substrate processing program. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus including a heating section that supports and heats a substrate on which a coating is formed, a chamber arranged to surround the substrate, a shutter section that opens and closes a substrate loading / unloading port provided on a side wall of the chamber, and an exhaust section that exhausts gas from a processing space in the chamber. In the apparatus described in Patent Document 1, gas introduced from the shutter side passes through the processing space and is exhausted from the exhaust section. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2023-75018 A Summary of the Invention [Problem to be solved by the invention]

[0004] In a substrate processing apparatus, vaporized matter is generated from the coating as the hardening of the coating progresses, and it is necessary to exhaust the vaporized matter by a gas flow, however, the influence of the gas flow can reduce the uniformity of the film thickness distribution.

[0005] The present disclosure aims to provide a substrate processing apparatus, a substrate processing method, and a substrate processing program that are effective in achieving both the discharge of vaporized matter by gas flow and the suppression of the effect of the gas flow on film thickness distribution. [Means for solving the problem]

[0006] In one exemplary embodiment, a substrate processing apparatus includes a support part for supporting a substrate, a chamber for accommodating the substrate supported on the support part, and a heater provided on the support part for heating the substrate supported on the support part, and the chamber includes an air supply part for supplying gas from above to the substrate supported on the support part, an inner wall for surrounding the substrate supported on the support part, an outer wall for surrounding the inner wall so as to form an annular enclosed space between the inner wall and the outer wall, an exhaust gap formed in an annular shape between the inner wall and the support part and connecting the internal space of the inner wall to the enclosed space, and an exhaust part for discharging the gas from the enclosed space to the outside of the chamber. Effect of the Invention

[0007] According to the present disclosure, there is provided a substrate processing apparatus, a substrate processing method, and a substrate processing program that are effective in achieving both the discharge of vaporized matter by a gas flow and the suppression of the effect of the gas flow on the film thickness distribution. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view illustrating a schematic configuration of a wafer processing system. [Diagram 2] FIG. 2 is a front view illustrating a schematic configuration of the wafer processing system. [Diagram 3] FIG. 3 is a cross-sectional view illustrating the configuration of a heat treatment apparatus. [Figure 4] FIG. 4 is a plan view illustrating a schematic example of the internal configuration of the chamber. [Diagram 5] FIG. 5 is a cross-sectional view of the heat treatment apparatus taken along line VV in FIG. [Figure 6] FIG. 6 is a perspective view of the heat treatment apparatus taken along the line VI-VI in FIG. [Figure 7] FIG. 7 is a block diagram illustrating a hardware configuration of the control unit. [Figure 8] FIG. 8 is a flow chart illustrating a heat treatment procedure. [Figure 9]FIG. 9 is a diagram for explaining an example of a gas flow. [Figure 10] Fig. 10(a) is a diagram showing an example of a change in gas supply flow rate, Fig. 10(b) is a diagram showing an example of a gas exhaust flow rate, and Fig. 10(c) is a diagram showing an example of a change in wafer temperature. [Figure 11] FIG. 11 is a cross-sectional view illustrating a heat treatment apparatus according to a modified example. [Figure 12] FIG. 12 is a perspective view illustrating a heat treatment apparatus according to a modified example. [Figure 13] FIG. 13 is a plan view illustrating a schematic internal configuration of a chamber in a heat treatment apparatus according to another modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment will be described with reference to the drawings. In the description, the same elements or elements having the same functions are designated by the same reference numerals, and duplicated description will be omitted.

[0010] Hereinafter, a wafer processing system as a substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0011] <Wafer processing system> First, the configuration of the wafer processing system according to this embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that illustrate a schematic configuration of the wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography processing system that performs a resist film forming process and a development process on a wafer (substrate) W.

[0012] 1, the wafer processing system 1 includes a cassette station 2 where a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The processing station 3 is an example of a substrate processing device. The wafer processing system 1 includes an interface station 4 that transfers the wafers W between the cassette station 2, the processing station 3, and an exposure device (not shown) adjacent to the opposite side of the processing station 3, and is integrally connected to the cassette station 2. Note that, as shown in FIG. 1, two processing stations 3 are installed between the cassette station 2 and the interface station 4, but one or three or more processing stations may be installed.

[0013] The cassette station 2 is provided with a plurality of cassette mounting stages 21 and wafer transport devices 22 and 23. The cassette station 2 transports the wafers W between the cassettes C mounted on the mounting stages 12 and the processing station 3 by the wafer transport devices 22 or 23. To this end, the wafer transport devices 22 and 23 are each provided with drive mechanisms for directions such as the X direction, Y direction, up and down direction, and around the vertical axis (θ direction) as necessary, and may be provided with drive mechanisms for all directions.

[0014] At least one of the wafer transport devices 22 and 23 is capable of transferring the wafer W between the cassette C and the processing station 3, and is also capable of transferring the wafer W to and from the processing station 3. Note that the transfer operation of the wafer W to and from the processing station 3 means, for example, transferring the wafer W to and from a third block G3 including a transfer device accessible to a wafer transport device 33 in the processing station 3 described below. The third block G3 may include a plurality of transfer devices (not shown) arranged vertically.

[0015] The cassette station 2 may include an inspection device (not shown) that inspects the wafer W at a position accessible to either the wafer transport devices 22 or 23.

[0016] The processing station 3 is an example of a substrate processing apparatus. The processing station 3 is provided with a plurality of blocks, for example, three blocks, a first block G1, a second block G2, and a fourth block G4. Also, as shown in FIG. 2, a plurality of layers 31 each including the first block G1 and the second block G2 are stacked in the vertical direction. For example, the first block G1 is provided on the front side (negative side in the X direction in FIG. 1) of the processing station 3, and the second block G2 is provided on the rear side (positive side in the X direction in FIG. 1) of the processing station 3. The fourth block G4 is provided on the interface station 4 side (positive side in the Y direction in FIG. 1) of the processing station 3 or at a connection portion with another adjacent processing station 3. The fourth block G4 may be provided with a plurality of transfer devices arranged in the vertical direction. Also, the above-mentioned third block G3 may be provided in the processing station 3.

[0017] In the first block G1, a plurality of processing devices, such as a patterning film forming device and a development processing device, both of which are not shown, are arranged. The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device. For example, a plurality of processing devices are arranged side by side in the horizontal direction. The number, arrangement, and type of these processing devices can be selected arbitrarily.

[0018] In these patterning film forming apparatuses and developing treatment apparatuses, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, in the patterning film forming apparatuses, a resist film is formed that is used as a mask when forming a pattern of a lower layer film, and an anti-reflection film is formed for efficiently performing a light irradiation process, for example, an exposure process. Meanwhile, in the developing treatment apparatuses, a part of the exposed resist film is removed to form an uneven shape as the mask.

[0019] For example, in the second block G2, heat treatment devices (not shown) that perform heat treatment such as heating and cooling of the wafer W are arranged vertically and horizontally. Also, in the second block G2, although neither is shown, a hydrophobization treatment device that performs a hydrophobization treatment to improve the fixation of the resist liquid to the wafer W, and a peripheral exposure device that exposes the peripheral portion of the wafer W are arranged vertically (Z direction in FIG. 2) and horizontally. The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices can also be selected arbitrarily.

[0020] 1, a wafer transfer area 32 is formed in an area between a first block G1 and a second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0021] The wafer transport device 33 has a transport arm that is movable in, for example, the X direction, the Y direction, the θ direction, and the up-down direction. The wafer transport device 33 moves within the wafer transport area 32 and can transport the wafer W to a predetermined device within the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as shown in FIG. 1, the wafer transport device 33 provided in the processing station 3 located on the interface station 4 side can transport the wafer W to a predetermined device within the fifth block G5 described below in addition to the first block G1, the second block G2, and the fourth block G4.

[0022] A plurality of wafer transport devices 33 are arranged, for example, one above the other. One wafer transport device 33 can transport a wafer W to a predetermined device located at the height of the upper layers 31 out of the multiple layers 31 stacked vertically (see FIG. 2). Another wafer transport device 33 can transport a wafer W to a predetermined device located at the height of the multiple layers 31 located below the layers 31. A plurality of wafer transport areas 32 are provided to enable such transport of wafers W. The number of wafer transport devices 33 and the number of layers 31 corresponding to one wafer transport device 33 can be selected arbitrarily, such as providing a wafer transport device 33 for each layer 31.

[0023] Furthermore, the wafer transfer area 32, the first block G1, or the second block G2 may include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers the wafer W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0024] The interface station 4 includes a fifth block G5 having a plurality of transfer devices, and wafer transfer devices 41 and 42. The interface station 4 transfers the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device using the wafer transfer device 41 or 42. To this end, the wafer transfer devices 41 and 42 each include a drive mechanism for the X direction, Y direction, up and down direction, and around the vertical axis (θ direction) as necessary, and may include a drive mechanism for all directions. At least one of the wafer transfer devices 41 and 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0025] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device may be provided in the interface station 4 at a position accessible to either of the wafer transfer devices 41 and 42 .

[0026] As described above, the inspection device may be provided in the cassette station 2, but it may also be provided in the processing station 3 and the interface station 4 at a position accessible to any of the transport arms (33, 41, 42 in Figure 1 or Figure 2) provided inside each of them.

[0027] The above-described wafer processing system 1 is provided with a control unit 100. The control unit 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of the drive systems of the above-described various processing devices and transport devices, etc., to realize the wafer processing in the wafer processing system 1. The above-described program may be recorded in a computer-readable storage medium and installed in the control unit 100 from the storage medium.

[0028] <Wafer Processing System Operation> The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0029] First, a cassette C storing a plurality of wafers W is carried into the cassette station 2 of the wafer processing system 1 and placed on the cassette mounting table 21. Next, each wafer W in the cassette C is sequentially taken out by the wafer transfer device 22 or 23 and transferred to a delivery device in the third block G3.

[0030] The wafer W transferred to the transfer device of the third block G3 is supported by the wafer transfer device 33 and transferred to the hydrophobization treatment device provided in the second block G2, where the hydrophobization treatment is performed. Next, the wafer W is transferred to the resist film forming device by the wafer transfer device 33, where a resist film is formed on the wafer W, and then the wafer W is transferred to the heat treatment device and pre-baked, and then transferred to the transfer device of the fifth block G5. In addition, when there are multiple processing stations 3 as shown in FIGS. 1 and 2, the wafer W is once placed in the transfer device of the fourth block G4 before being transferred to the transfer device of the fifth block G5, and then transferred between the multiple wafer transfer devices 33. In addition, the wafer W may be transferred to the peripheral exposure device by the wafer transfer device 33 as necessary, where the peripheral portion of the wafer W is exposed.

[0031] The wafer W transferred to the delivery device in the fifth block G5 is transferred to the exposure device by the wafer transfer devices 41 and 42 and is exposed to a predetermined pattern. Note that the wafer W may be cleaned by a cleaning device before the exposure process.

[0032] The exposed wafer W is transferred to a transfer device in the fifth block G5 by the wafer transfer devices 41 and 42. Thereafter, the wafer W is transferred to a heat treatment device by the wafer transfer device 33 and subjected to post-exposure baking.

[0033] The wafer W that has been subjected to the post-exposure baking process is transferred by the wafer transfer device 33 to a developing treatment device, where it is developed. After the development is completed, the wafer W is transferred by the wafer transfer device 33 to a heat treatment device 40, where it is subjected to a post-baking process.

[0034] Thereafter, the wafer W is transferred by the wafer transfer device 33 to a delivery device in the third block G3, and then transferred by the wafer transfer device 22 or 23 in the cassette station 2 to a cassette C on a predetermined cassette mounting table 21. In this manner, a series of photolithography steps is completed.

[0035] It should be noted that the wafer processing system of the present disclosure is not limited to the configuration and operation described above. For example, in the above embodiment, the wafer W is transferred between the interface station 4 and the exposure device, but it does not have to be directly connected to the exposure device. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where it is subjected to necessary processing, and then transferred back to the cassette station 2 to be taken out to the outside. Also, among the processing devices listed, those that are not required may not be provided, or processing may not be performed in those devices.

[0036] The specific configuration of the substrate processing apparatus is not limited to the processing station 3. The substrate processing apparatus may have any configuration as long as it includes a heat treatment apparatus and a control unit 100 capable of controlling the heat treatment apparatus.

[0037] <Heat treatment equipment> Next, the configuration of the heat treatment apparatus of the substrate processing apparatus will be described with reference to Figures 3 to 6. In the following description, continuing from Figures 1 and 2, an XYZ coordinate system is used for convenience of explanation. Here, the Z direction is the thickness direction of the wafer W. The Y direction is one in-plane direction of the wafer W and is perpendicular to the Z direction. The X direction is another in-plane direction of the wafer W and is perpendicular to the Z direction and the Y direction.

[0038] FIG. 3 is a cross-sectional view illustrating the configuration of the heat treatment device 5. The heat treatment device 5 includes a support 6, a chamber 7, and a heater 61 provided on the support 6. The support 6 horizontally supports the wafer W having a resist film (coating) formed on its surface so that the surface faces upward. The heater 61 heats the wafer W supported by the support 6 from below. For example, the heater 61 includes an electric heating wire or the like built into the support 6. The outer shape of the support 6 may correspond to the outer shape of the wafer W when viewed from the Z direction. The correspondence between shapes means, for example, that the shapes are roughly similar to each other, but is not limited to this. The correspondence between shapes also includes the case where, when the shapes are superimposed, the interval between the outline of one shape and the outline of the other shape is roughly uniform over the entire circumference. The same applies below. In the case of being roughly similar, the outline of one shape may coincide with a line that is completely similar to the other shape, or 70% or more of the outline of the other shape may coincide, or 90% or more of the outline of the other shape may coincide. In the case of being roughly uniform over the entire circumference, the outline of one shape may coincide with the outline of the other shape, or 70% or more of the outline of the other shape may coincide, or 90% or more of the outline of the other shape may coincide. In one example, when the outer diameter of the wafer W is circular, the outer shape of the support 6 may be circular.

[0039] The chamber 7 accommodates the wafer W supported by the support 6. The chamber 7 defines a space on the support 6 that is separated from the external space S0. The chamber 7 has an inner wall 71, an outer wall 72, an upper wall 73, an air supply section 74, and an exhaust section 75.

[0040] The inner wall 71 surrounds the wafer W supported by the support 6. The outer shape of the area surrounded by the inner wall 71 may correspond to the outer shape of the wafer W. For example, when the outer shape of the wafer W is circular, the outer shape of the area surrounded by the inner wall 71 may also be circular.

[0041] The outer wall 72 surrounds the inner wall 71. The outer wall 72 surrounds the inner wall 71 on the side of the inner wall 71 opposite to the wafer W. The outer wall 72 surrounds the inner wall 71 along the outer edge of the inner wall 71 at a predetermined interval from the outer edge of the inner wall 71. In this embodiment, the interval between the outer edge of the inner wall 71 and the outer wall 72 is constant along the outer edge of the inner wall 71.

[0042] A lower portion of the outer wall 72 is closed by the support portion 6, and an upper portion of the outer wall 72 is closed by an upper wall 73. The upper wall 73 faces the support portion 6 in the Z direction. Between the upper wall 73 and the support portion 6, an internal space S2 surrounded by the inner wall 71 and a chamber space S1 surrounded by the outer wall 72 outside the inner wall 71 are formed. The chamber space S1 constitutes at least a part of an annular surrounded space formed to surround the wafer W.

[0043] The gas supply unit 74 supplies gas from above to the wafer W supported by the support unit 6. The gas supplied from the gas supply unit 74 is sent through the upper wall 73 to the internal space S2.

[0044] A chamber gap GP1 is formed between the inner wall 71 and the support 6. That is, the lower end of the inner wall 71 is not in close contact with the support 6. The chamber gap GP1 communicates the internal space S2 of the inner wall 71 with the chamber space S1. As a result, the gas sent to the internal space S2 flows into the chamber space S1. The chamber gap GP1 is formed over at least most of the inner wall 71 along the circumferential direction around the vertical axis, and may be formed over 70% or more of the inner wall 71, may be formed over 90% or more of the inner wall 71, or may be formed over the entire area of ​​the inner wall 71. The details will be described later, but the chamber gap GP1 constitutes at least a part of an exhaust gap formed in an annular shape so as to surround the wafer W around the vertical axis.

[0045] The exhaust unit 75 exhausts gas from the chamber space S1 to the outside of the chamber 7. For example, the exhaust unit 75 has an exhaust port 751, an exhaust flow path 752, an exhaust valve 753, and an exhaust duct 754. The exhaust port 751 opens into the chamber space S1. For example, the exhaust port 751 opens from the outer wall 72 into the chamber space S1. The exhaust flow path 752 communicates the exhaust port 751 with the exhaust duct 754, and sends gas from the exhaust port 751 to the exhaust duct 754. The exhaust unit 75 exhausts gas from the chamber space S1 to the exhaust duct 754 via the exhaust flow path 752. The exhaust valve 753 is disposed on the exhaust flow path 752 between the exhaust port 751 and the exhaust duct 754. The exhaust valve 753 changes the amount of gas exhausted by changing the opening degree of the exhaust flow path 752. In the drawing, the exhaust port 751 opens into the chamber from one location on the outer wall 72, but is not limited to this. The exhaust port 751 may open into the chamber space S1 from the upper wall 73, or may open into the chamber space S1 from the support part 6. Furthermore, the exhaust part 75 may have multiple exhaust ports 751 that open into the chamber space S1 at multiple locations.

[0046] The gas supply unit 74 may be configured to supply gas from a plurality of gas supply ports scattered along the surface facing the support unit 6. For example, the upper wall 73 further includes a recess 731 recessed upward (in the positive direction of the Z axis) and a peripheral wall 732 surrounding the recess 731. The chamber 7 further includes a top plate 76. The top plate 76 is provided inside the peripheral wall 732 so as to close the recess 731 from below (in the negative direction of the Z axis). The top plate 76 is a partition plate that separates the recess 731 from the internal space S2.

[0047] The gas supply unit 74 has a gas supply chamber 741 formed between the upper wall 73 and the top plate 76, a gas supply source 742, a gas supply flow path 743, a gas supply valve 744, and a plurality of gas supply ports 76a. The gas supply chamber 741 is disposed on the top plate 76. For example, the gas supply chamber 741 is inside the recess 731. The plurality of gas supply ports 76a are provided in the top plate 76 and formed to penetrate the top plate 76 in the Z direction. The plurality of gas supply ports 76a are provided so as to be scattered along the surface facing the support part 6. The gas supplied to the gas supply chamber 741 is sent toward the support part 6 through the plurality of gas supply ports 76a. At this time, the gas may hit the wafer W on the support part 6 at a uniform flow rate by passing through the plurality of gas supply ports 76a.

[0048] Gas supply source 742 is disposed outside upper wall 73. Air supply passage 743 communicates air supply chamber 741 with gas supply source 742, and sends gas from gas supply source 742 to air supply chamber 741. Air supply valve 744 is disposed on air supply passage 743 between air supply chamber 741 and gas supply source 742. Air supply valve 744 changes the amount of gas supplied by changing the opening degree of air supply passage 743.

[0049] The range in which the multiple air supply ports 76a are scattered may occupy most of the area facing the wafer W, may occupy 70% or more, or may occupy 90% or more. The range in which the multiple air supply ports 76a are scattered may be larger than the area facing the wafer W. The multiple air supply ports 76a may be arranged in a matrix at a constant pitch, but is not limited to this. For example, the multiple air supply ports 76a may be arranged in a staggered pattern. The aperture (inner diameter) of the multiple air supply ports 76a may be uniform or non-uniform.

[0050] The air supply section 74 may further include a dispersion plate 745. The dispersion plate 745 extends horizontally (perpendicular to the Z direction) within the air supply chamber 741, and divides the air supply chamber 741 into an upper air supply chamber 741a on the upper wall 73 side and a lower air supply chamber 741b on the support section 6 side. The dispersion plate 745 includes a plurality of relay air supply ports 745a provided so as to be scattered along the surface facing the support section 6. The plurality of relay air supply ports 745a are formed so as to penetrate the dispersion plate 745 in the Z direction. The gas sent from the gas supply source 742 to the upper air supply chamber 741a may be sent to the lower air supply chamber 741b at a uniform flow rate by passing through the plurality of relay air supply ports 745a.

[0051] The range in which the multiple relay air supply ports 745a are scattered may occupy the majority of the range in which the multiple air supply ports 76a are scattered, may occupy 70% or more, or may occupy 90% or more. The range in which the multiple relay air supply ports 745a are scattered may be larger than the range in which the multiple air supply ports 76a are scattered. The multiple relay air supply ports 745a may be arranged in a matrix shape at a constant pitch, but are not limited to this. For example, the multiple relay air supply ports 745a may be arranged in a staggered pattern. The multiple relay air supply ports 745a may be arranged so as not to overlap with the multiple air supply ports 76a. The apertures of the multiple relay air supply ports 745a may be uniform or may be non-uniform. The total opening area of ​​the multiple relay air supply ports 745a may be larger than the total opening area of ​​the multiple air supply ports 76a.

[0052] The heat treatment device 5 may further include a chamber drive unit 91 that raises and lowers the inner wall 71. The size of the chamber gap GP1 is changed by raising and lowering the inner wall 71. The peripheral wall 732 includes an accommodation groove 77 for accommodating the inner wall 71 when the inner wall 71 is raised and lowered. The width (length in the Y direction) of the accommodation groove 77 is longer than the thickness (length in the Y direction) of the inner wall 71. The chamber drive unit 91 may be an electric type or an air-driven type. In the figure, the chamber drive unit 91 is configured to drive the inner wall 71 from below the support unit 6 through the support unit 6, but is not limited to this. For example, the chamber drive unit 91 may be configured to drive the inner wall 71 from above the upper wall 73 through the upper wall 73.

[0053] The heat treatment device 5 may further include a heater 78 (second heater) for heating the top plate 76. For example, the heater 78 is built in the upper wall 73 above the air supply chamber 741. The heater 78 built in the upper wall 73 heats the upper wall 73. The heat applied to the upper wall 73 by the heater 78 heats the top plate 76 through the air supply chamber 741. For example, the heat applied to the upper wall 73 by the heater 78 heats the top plate 76 through the upper air supply chamber 741a, the dispersion plate 745, and the lower air supply chamber 741b. That is, the top plate 76 is heated by the heater 78. According to the configuration in which the heater 78 heats the top plate 76, the internal space S2 is heated from both above and below. As a result, natural convection due to the temperature difference between the top and bottom is less likely to occur in the internal space S2.

[0054] FIG. 4 is a plan view illustrating a schematic internal configuration of the chamber 7. As shown in FIG. 4, the chamber 7 may further include a loading / unloading port 80 formed on the inner wall 71 and the outer wall 72, and a shutter 81. The inner wall 71, the outer wall 72, and the chamber space S1 are in an arc shape surrounding the wafer W. In FIG. 4, the upper wall 73, the dispersion plate 745, and the top plate 76 are not shown. The loading / unloading port 80 is an opening formed in a part of the inner wall 71 and the outer wall 72 in the circumferential direction, and communicates the inner space S2 with the outer space S0. The wafer W is loaded from the outer space S0 to the inner space S2 through the loading / unloading port 80, and is loaded from the inner space S2 to the outer space S0 through the loading / unloading port 80.

[0055] The shutter 81 moves up and down to open and close the loading / unloading port 80. The shutter 81 opens the loading / unloading port 80 when loading / unloading the wafer W, and closes the loading / unloading port 80 when heat-treating the wafer W. The shutter 81 has a shutter inner wall 82 and a shutter outer wall 83.

[0056] The shutter inner wall 82 corresponds to the inner wall 71. The shutter inner wall 82, together with the inner wall 71, surrounds the internal space S2 in an annular shape and separates the internal space S2 from the external space S0. For example, the shutter inner wall 82 supplements a portion of the planar shape of the inner wall 71 that is missing due to the formation of the loading / unloading port 80. For example, the shutter inner wall 82 has an arc shape that supplements the circular missing portion of the inner wall 71. The length of the arc formed by the shutter inner wall 82 is shorter than the length of the arc formed by the inner wall 71. Both end portions 82a of the shutter inner wall 82 in the circumferential direction D1 of the support portion 6 and both end portions 71a of the inner wall 71 in the circumferential direction D1 may overlap each other in the radial direction D2. For example, both end portions 82a and both end portions 71a are arranged with an overlapping margin. The two end portions 82a and 71a need only be close enough to each other to substantially separate the internal space S2 from the external space S0, and are not necessarily in close contact with each other. For example, as shown in FIG. 4, a gap may be formed between the two end portions 82a and 71a in the radial direction D2.

[0057] The shutter outer wall 83 corresponds to the outer wall 72. For example, the shutter outer wall 83, together with the outer wall 72, surrounds the inner wall 71 and the shutter inner wall 82, and forms the above-mentioned annular enclosed space S4 between the inner wall 71 and the shutter inner wall 82. For example, the shutter outer wall 83 forms a shutter space S3 that constitutes a part of the enclosed space S4 between the shutter outer wall 83 and the shutter inner wall 82. The enclosed space S4 is formed by the shutter space S3 and the above-mentioned chamber space S1.

[0058] For example, the shutter inner wall 82 compensates for a portion of the planar shape of the inner wall 71 that is missing due to the formation of the loading / unloading port 80. For example, the shutter inner wall 82 has an arc shape that compensates for a missing portion of the circular shape of the outer wall 72. The length of the arc formed by the shutter outer wall 83 is shorter than the length of the arc formed by the outer wall 72. Both end portions 83a of the shutter outer wall 83 in the circumferential direction D1 of the support portion 6 and both end portions 72a of the outer wall 72 in the circumferential direction D1 may overlap each other in the radial direction D2. For example, the both end portions 83a and the both end portions 72a may be close enough to be able to substantially separate the enclosed space and the external space S0, and are not necessarily in close contact with each other. For example, a gap may be formed in the radial direction D2 between the both end portions 83a and the both end portions 72a as shown in FIG. 4.

[0059] FIG. 5 is a cross-sectional view of the heat treatment apparatus 5 taken along the line VV in FIG. 4. As shown in FIG. 5, when the shutter 81 closes the loading / unloading port 80, a shutter gap GP2 is formed between the shutter inner wall 82 and the support 6. That is, the lower end of the shutter inner wall 82 is not in close contact with the support 6. The shutter gap GP2 communicates the internal space S2 with the shutter space S3. As a result, the gas sent to the internal space S2 flows into the shutter space S3. The shutter gap GP2 is formed over at least most of the shutter inner wall 82 along the circumferential direction around the vertical axis, and may be formed over 70% or more of the shutter inner wall 82, may be formed over 90% or more of the shutter inner wall 82, or may be formed over the entire area of ​​the shutter inner wall 82. The shutter gap GP2 constitutes at least a part of an exhaust gap formed in an annular shape so as to surround the wafer W around the vertical axis.

[0060] For example, the shutter inner wall 82, together with the inner wall 71, annularly surrounds the internal space S2, and forms the above-mentioned annular exhaust gap GP3 between the shutter inner wall 82 and the inner wall 71 and the support portion 6. The exhaust gap GP3 is formed by the shutter gap GP2 and the above-mentioned chamber gap GP1.

[0061] As shown in FIG. 5, the heat treatment device 5 further includes a shutter drive unit 92 that raises and lowers the shutter inner wall 82 while the shutter outer wall 83 closes the loading / unloading port 80. The size of the shutter gap GP2 is changed by raising and lowering the shutter inner wall 82. The shutter drive unit 92 includes a shutter inner wall drive unit 93 that raises and lowers the shutter inner wall 82, and a shutter outer wall drive unit 94 that raises and lowers the shutter outer wall 83. In the example of FIG. 5, the peripheral wall 732 includes an accommodation groove 84 for accommodating the shutter inner wall 82 when the shutter inner wall 82 is raised and lowered. Similarly, in the example of FIG. 5, the peripheral wall 732 includes an accommodation groove 85 for accommodating the shutter outer wall 83 when the shutter outer wall 83 is raised and lowered.

[0062] The shutter inner wall drive unit 93 and the shutter outer wall drive unit 94 may be electric or air-driven, like the chamber drive unit 91. In the drawing, the shutter inner wall drive unit 93 is configured to drive the shutter inner wall 82 from below the support unit 6 through the support unit 6, but is not limited to this. Similarly, in the drawing, the shutter outer wall drive unit 94 is configured to drive the shutter outer wall 83 from below the support unit 6, but is not limited to this. For example, the shutter inner wall drive unit 93 may be configured to drive the shutter inner wall 82 from above the upper wall 73 through the upper wall 73. For example, the shutter outer wall drive unit 94 may be configured to drive the shutter outer wall 83 from above the upper wall 73 through the upper wall 73. As described above, the shutter inner wall drive unit 93 and the shutter outer wall drive unit 94 are provided independently of each other. Thereby, for example, only the shutter inner wall 82 may rise and fall to adjust the shutter gap GP2, or only the shutter outer wall 83 may rise and fall to open and close the loading / unloading port 80.

[0063] The shutter driving unit 92 may be a single driving unit that raises and lowers the shutter inner wall 82 and at the same time raises and lowers the shutter outer wall 83. For example, the shutter inner wall driving unit 93 and the shutter outer wall driving unit 94 may be connected to each other. In this case, the height of the shutter outer wall 83 may be higher than the height of the shutter inner wall 82. The height of the shutter outer wall 83 may be higher than the height of the internal space S2, for example, and the shutter outer wall 83 may overlap with the support part 6 in the Z direction. Thereby, even when the shutter inner wall 82 raises and lowers during processing of the wafer W, the shutter outer wall 83 maintains a state in which the shutter outer wall 83 closes the loading / unloading port 80.

[0064] Fig. 6 is a perspective view of the heat treatment device 5 cut along the line VI-VI in Fig. 4. The opening area AR1 of the exhaust gap GP3 is smaller than twice the area AR2 of the flow path formed by the enclosed space S4 along the circumferential direction D1 of the support part 6. Here, the opening area AR1 is a value obtained by multiplying the size of the exhaust gap GP3 by the circumferential length of the exhaust gap GP3. The area AR2 of the flow path is the cross-sectional area of ​​a section defined by the Z direction and the radial direction D2 in the enclosed space S4.

[0065] As shown in FIG. 5, the control unit 100 controls the chamber driver 91 so that the size of the chamber gap GP1 (the length in the Z direction between the inner wall 71 and the support unit 6) becomes a predetermined size. Furthermore, the control unit 100 controls the shutter driver 92 so that the size of the shutter gap GP2 (the length in the Z direction between the shutter inner wall 82 and the support unit 6) becomes a predetermined size. The control unit 100 may control the chamber driver 91 and the shutter inner wall driver 93 in conjunction with each other. For example, the control unit 100 may control the shutter inner wall driver 93 and the chamber driver 91 so that the inner wall 71 and the shutter inner wall 82 are raised substantially simultaneously and the inner wall 71 and the shutter inner wall 82 are lowered substantially simultaneously. Furthermore, the control unit 100 may control the shutter inner wall driver 93 and the chamber driver 91 so that the height of the inner wall 71 and the height of the shutter inner wall 82 are substantially the same. This allows the chamber gap GP1 and the shutter gap GP2 to be kept at the same size, and the exhaust gap GP3 to be uniform over the entire circumference.

[0066] The control unit 100 may control the shutter inner wall drive unit 93 and the chamber drive unit 91 to make the lifting height of the inner wall 71 different from the lifting height of the shutter inner wall 82, in order to intentionally make the size of the chamber gap GP1 and the shutter gap GP2 different.

[0067] The control unit 100 may control the chamber drive unit 91 and the shutter inner wall drive unit 93 to increase the exhaust gap GP3 as the heating time of the wafer W elapses. The control unit 100 may also control the chamber drive unit 91 and the shutter inner wall drive unit 93 to change the size of the exhaust gap GP3 based on information about a coating formed on the wafer W supported by the support unit 6. Even when the control unit 100 changes the size of the exhaust gap GP3 in this manner, the opening area AR1 of the exhaust gap GP3 is maintained smaller than twice the area AR2 of the flow path formed by the enclosed space S4 along the circumferential direction D1 of the support unit 6, as described above.

[0068] The control unit 100 may control the shutter inner wall drive unit 93 and the shutter outer wall drive unit 94 so as to open and close the loading / unloading port by raising and lowering the shutter inner wall and the shutter outer wall.

[0069] Fig. 7 is a block diagram illustrating a hardware configuration of the control unit 100. The control unit 100 is configured by one or more control computers. As shown in Fig. 7, the control unit 100 has a circuit 120. The circuit 120 includes at least one processor 121, a memory 122, a storage 123, and an input / output port 124. The storage 123 has a storage medium readable by a computer, such as a hard disk. The storage 123 stores a program for causing the control unit 100 to control the heat treatment device 5 to execute a substrate processing method including heating the wafer W using a heater 61 provided on a support portion 6 that supports the wafer W, supplying gas from above to the wafer W, flowing gas from the internal space S2 of the inner wall 71 toward the annular enclosed space S4 formed between the inner wall 71 and the outer wall 72 through an exhaust gap GP3 formed in an annular shape between the inner wall 71 surrounding the wafer W and the support portion 6, and discharging gas from the enclosed space S4 to the outside of the chamber that contains the wafer W.

[0070] The memory 122 temporarily stores the programs loaded from the storage medium of the storage 123 and the results of calculations by the processor 121. The processor 121 executes the above programs in cooperation with the memory 122. The input / output port 124 inputs and outputs electrical signals between the chamber drive unit 91, the shutter inner wall drive unit 93, the shutter outer wall drive unit 94, the air supply valve 744, and the exhaust valve 753 in accordance with instructions from the processor 121.

[0071] The hardware configuration of the control unit 100 is not necessarily limited to one that operates the circuit 120 by a program. For example, at least a part of the circuit 120 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the dedicated logic circuit.

[0072] <Heat treatment procedure> Next, as an example of a substrate processing method, a heat treatment procedure executed by the heat treatment apparatus 5 and the control unit 100 will be illustrated. FIG. 8 is a flow chart illustrating the heat treatment procedure. In the following heat treatment procedure, the internal space S2 may be constantly heated by the heaters 61 and 78. Alternatively, heating of the internal space S2 may be started at a predetermined timing. In the following description, a case where the internal space S2 is constantly heated will be described as an example.

[0073] In step ST1, the control unit 100 controls the shutter driving unit 92 to open the loading / unloading port 80 by the shutter 81. For example, the shutter outer wall driving unit 94 raises the shutter outer wall 83 to completely accommodate the shutter outer wall 83 in the accommodation groove 85. Similarly, the shutter inner wall driving unit 93 raises the shutter inner wall 82 to completely accommodate the shutter inner wall 82 in the accommodation groove 84. Then, the control unit 100 waits until the wafer W is loaded from the external space S0 into the internal space S2 with the shutter 81 opening the loading / unloading port 80. When the wafer W is loaded (step ST1: YES), the loaded wafer W is placed on the support unit 6. Since the internal space S2 is always heated, heating of the loaded wafer W starts. The loading operation of the wafer W is performed by, for example, the wafer transfer device 33.

[0074] In step ST2, the control unit 100 controls the shutter driving unit 92 to close the loading / unloading opening 80 by the shutter 81. For example, the shutter outer wall driving unit 94 lowers the shutter outer wall 83 to close the loading / unloading opening 80. Similarly, the shutter inner wall driving unit 93 lowers the shutter inner wall 82 to make the size of the shutter gap GP2 equal to the size of the chamber gap GP1. The size of the chamber gap GP1 is set to, for example, a predetermined initial gap when the wafer W is loaded. The size of the exhaust gap GP3 becomes the initial gap when the wafer W is loaded.

[0075] In step ST3, the control unit 100 controls the chamber driving unit 91 and the shutter inner wall driving unit 93 to change the size of the exhaust gap GP3 based on the information of the coating formed on the wafer W supported by the support unit 6. The information of the coating includes, for example, the type of the coating, the film thickness, or the width of the coating (size of the wafer W). When the type of the coating, the film thickness, or the width of the coating, etc. are stored in correspondence with a unique ID, the information of the coating may be an ID associated with the type of the coating, the film thickness, or the width of the coating. The information of the coating may be, for example, recorded in advance in the storage 123 of the control unit 100. The control unit 100 may control, for example, the chamber driving unit 91 and the shutter inner wall driving unit 93 according to the information of the coating to change the size of the exhaust gap GP3 from the initial gap to the intermediate gap. The correspondence between the information of the coating and the intermediate gap may be, for example, recorded in advance in the storage 123 in the form of a look-up table. The size of the intermediate gap may be substantially the same as the initial gap, or may be different. For example, assume that the initial gap is set according to the type of coating that is most frequently used. When the same type of coating as the set coating is used, the size of the intermediate gap may be substantially the same as the initial gap. On the other hand, when a different type of coating is used, the size of the intermediate gap may be different from the initial gap.

[0076] In step ST4, the control unit 100 controls the intake valve 744, which opens the intake passage 743, so that gas is supplied from the gas supply source 742 to the intake chamber 741 via the intake passage 743, and the gas is supplied to the internal space S2. At this time, the opening degree of the intake passage 743 may be a predetermined initial intake opening degree. Here, the intake opening degree is, for example, 100% when the intake valve 744 is fully open, and 0% when it is fully closed. The larger the intake opening degree, the larger the amount of gas supplied. The initial intake opening degree is, for example, when the intake valve 744 is open to 50% or less.

[0077] In step ST5, the control unit 100 controls the exhaust valve 753, which opens the exhaust passage 752, thereby exhausting gas from the exhaust port 751 to the exhaust duct 754 via the exhaust passage 752. At this time, the opening degree of the exhaust passage 752 may be a predetermined initial exhaust opening degree. Here, the exhaust opening degree is, for example, 100% when the exhaust valve 753 is fully open, and 0% when it is fully closed. The larger the exhaust opening degree, the larger the amount of gas exhausted. The initial exhaust opening degree is, for example, when the exhaust valve 753 is open to 50% or less.

[0078] Step ST4 and step ST5 form a gas flow from when the gas is supplied to when it is exhausted. FIG. 9 is a diagram for explaining an example of the gas flow. As described above, the opening area AR1 of the exhaust gap GP3 is smaller than twice the area AR2 of the flow path formed by the enclosed space S7 along the circumferential direction D1 of the support part 6. As a result, the flow path resistance of the enclosed space S7 becomes smaller than the flow path resistance of the exhaust gap GP3, so that a pressure difference along the circumferential direction D1 in the enclosed space S7 is unlikely to occur. As a result, the gas supplied from the gas supply part 74 to the internal space S2 flows radially in the radial direction D2 from the internal space S2 to the enclosed space S4 through the annular exhaust gap GP3. The gas that has flowed into the enclosed space S4 is exhausted from the exhaust port 751. At this time, since a pressure difference along the circumferential direction D1 in the enclosed space S4 is unlikely to occur, the gas that has flowed into the enclosed space S4 is exhausted with a small pressure loss.

[0079] In step ST6, the control unit 100 waits until a predetermined heating time has elapsed.

[0080] If a predetermined heating time has elapsed (ST6: YES), in step ST7, the control unit 100 controls the chamber driving unit 91 to increase the exhaust gap GP3. For example, the chamber driving unit 91 raises the inner wall 71 to increase the size of the chamber gap GP1 from the intermediate gap to the finishing gap. The finishing gap may be larger than the intermediate gap. The finishing gap may be the size of the chamber gap GP1 when the inner wall 71 is completely accommodated in the accommodation groove 77, or may be the size of the chamber gap GP1 when a part of the inner wall 71 is accommodated in the accommodation groove 77. In conjunction with this, the shutter inner wall driving unit 93 raises the shutter inner wall 82 to make the size of the shutter gap GP2 equal to the size of the chamber gap GP1. This causes the size of the exhaust gap GP3 to increase to the finishing gap.

[0081] In step ST8, the control unit 100 controls the exhaust valve 753 to increase the opening of the exhaust flow path 752. For example, the exhaust valve 753 increases the opening of the exhaust flow path 752 from an initial exhaust opening to a finishing exhaust opening. The finishing exhaust opening may be larger than the initial exhaust opening. The finishing exhaust opening is, for example, a state in which the exhaust valve 753 is open by 50% or more.

[0082] In step ST9, the control unit 100 controls the air intake valve 744 to increase the opening of the air intake passage 743. For example, the air intake valve 744 increases the opening of the air intake passage 743 to a finishing air intake opening. The finishing air intake opening may be larger than the initial air intake opening. The finishing air intake opening is, for example, a state in which the air intake valve 744 is open by 50% or more.

[0083] Steps ST7 to ST9 may be performed in order or simultaneously. FIG. 10 is a diagram showing an example of changes in gas flow rate and temperature of the wafer W according to the passage of heating time. The example of FIG. 10 assumes a case where steps ST7 to ST9 are performed simultaneously. The example of FIG. 10 shows an example after the opening degree of the supply air flow path 743 is set to the initial supply air opening degree, the opening degree of the exhaust air flow path 752 is set to the initial exhaust opening degree, and the size of the exhaust gap GP3 is set to the intermediate gap. That is, an example after step ST5 is completed and after step ST6 is shown. FIG. 10(a) shows an example of changes in the supply air flow rate of gas after step ST6. FIG. 10(b) shows an example of an exhaust air flow rate of gas after step ST6. FIG. 10(c) shows an example of changes in the temperature of the wafer W after step ST6.

[0084] During the period from the end of step ST5 to time T1, the opening of the air supply passage 743 may be maintained at the initial air supply opening, the opening of the exhaust passage 752 may be maintained at the initial exhaust opening, and the size of the exhaust gap GP3 may be maintained at the intermediate gap. In this case, as shown in FIG. 10(c), the temperature of the wafer W gradually increases as the heating time of the internal space S2 elapses. In other words, time T1 is the initial stage of heating. For example, in the initial stage of heating, the hardening of the coating by heating is allowed to proceed in a state in which the effect of the gas flow on the film thickness distribution is suppressed. Time T1 may end when the coating is crosslinked and sufficiently hardened.

[0085] Subsequently, at timing T0, steps ST7 to ST9 are executed. During time T2 after timing T0, the aperture of the gas supply passage 743 may be maintained at the finishing gas supply aperture, the aperture of the exhaust passage 752 may be maintained at the finishing exhaust aperture, and the size of the exhaust gap GP3 may be maintained at the finishing gap. In this case, as shown in FIG. 10(c), the temperature of the wafer W becomes saturated and becomes a substantially constant temperature. In other words, time T2 is the finishing stage of heating. For example, in the finishing stage, the size of the exhaust gap GP3, the aperture of the gas supply passage 743, and the aperture of the exhaust passage 752 are increased to increase the gas flow rate and promote the discharge of vaporized matter.

[0086] In step ST10, the control unit 100 waits until a predetermined processing time has elapsed. Here, the predetermined processing time may be the same as the heating time, or the control unit 100 may measure the processing time separately from the heating time at the same time as the start of ST4 or ST5.

[0087] If a predetermined processing time has elapsed (ST10: YES), in step ST11, control unit 100 stops the supply of gas. For example, control unit 100 completely closes intake valve 744 to completely close intake passage 743, and completely closes exhaust valve 753 to completely close exhaust passage 752.

[0088] In step ST12, the control unit 100 controls the shutter driving unit 92 to open the transfer port 80 by the shutter 81, and transfers out the wafer W. This completes the heat treatment procedure.

[0089] <Effects of the embodiment> According to the substrate processing apparatus described above, the gas supplied from the gas supply unit 74 to the internal space S2 flows radially from the internal space S2 toward the enclosed space S4 in the radial direction D2 of the wafer W through the annular exhaust gap GP3. This suppresses deviation and stagnation of the gas flow. This suppresses the influence of the exhaust flow on the film thickness distribution. In addition, since the exhaust gap GP3 is formed between the inner wall 71 and the support unit 6, the gas supplied from above to the wafer W flows radially along the surface of the wafer W. This suppresses the remaining of vaporized matter near the surface of the wafer W. Therefore, this substrate processing apparatus is effective in achieving both the discharge of vaporized matter by the gas flow and the suppression of the influence of the gas flow on the film thickness distribution.

[0090] The substrate processing apparatus further includes a chamber drive unit 91 that raises and lowers the inner wall 71 so as to change the size of the exhaust gap GP3. In this case, the chamber drive unit 91 can easily change the flow rate of the gas from the gas supply unit 74 to the exhaust unit 75 depending on the size of the exhaust gap GP3.

[0091] The substrate processing apparatus further includes a control unit 100 that controls the chamber driver 91 to increase the exhaust gap GP3 as the heating time of the wafer W by the heater 61 elapses. In this case, for example, in the initial stage of heating, the hardening of the coating by heating can be promoted in a state where the influence of the gas flow on the film thickness distribution is further suppressed. In the finishing stage of heating, the chamber driver 91 increases the exhaust gap GP3 to increase the gas flow rate and promote the discharge of vaporized material. Therefore, it is possible to further achieve both the discharge of sublimate by the gas flow and the suppression of the influence of the gas flow on the film thickness distribution.

[0092] The substrate processing apparatus further includes an exhaust valve 753 for changing the opening of an exhaust passage 752 for gas in the exhaust unit 75, and the control unit 100 further controls the exhaust valve 753 so as to increase the opening of the exhaust passage 752 as the heating time elapses. In this case, the difference in the gas flow rate between the initial stage and the finishing stage is increased, and it is possible to further achieve both the discharge of sublimates by the gas flow and the suppression of the effect of the gas flow on the film thickness distribution.

[0093] The substrate processing apparatus further includes an air supply valve 744 for changing the opening degree of a gas supply passage 743 in the air supply unit 74, and the control unit 100 further controls the air supply valve 744 so as to increase the opening degree of the air supply passage 743 as the heating time elapses. In this case, the difference in the gas flow rate between the initial stage and the finishing stage is increased, and it is possible to further achieve both the discharge of sublimate by the gas flow and the suppression of the effect of the gas flow on the film thickness distribution.

[0094] The substrate processing apparatus further includes a control unit 100 that controls the chamber drive unit 91 to change the size of the exhaust gap GP3 based on information about a film formed on the wafer W supported by the support unit 6. In this case, the gas flow can be made larger for a film whose film thickness distribution is easily affected by the gas flow than for a film whose film thickness distribution is less affected by the gas flow. In this way, it is possible to achieve both the discharge of sublimates by the gas flow and the suppression of the effect of the gas flow on the film thickness distribution for each film characteristic.

[0095] The chamber 7 further includes a loading / unloading port 80 formed in the inner wall 71 and the outer wall 72 so that the wafer W can be loaded and unloaded into the internal space S2, and a shutter 81 for opening and closing the loading / unloading port 80. The shutter 81 includes a shutter inner wall 82 corresponding to the inner wall 71, and a shutter outer wall 83 corresponding to the outer wall 72 so as to form a shutter space S6 constituting a part of the enclosed space S4 between the shutter inner wall 82 and the shutter outer wall 83. When the shutter 81 closes the loading / unloading port 80, a shutter gap GP2 constituting a part of the exhaust gap GP3 is formed between the shutter inner wall 82 and the support part 6. In this case, even if the inner wall 71 and the outer wall 72 are disconnected at the loading / unloading port 80, when the shutter 81 closes the loading / unloading port 80, the exhaust gap GP3 can be formed including the part where the inner wall 71 and the outer wall 72 are disconnected.

[0096] Both end portions 83a of the shutter outer wall 83 in the circumferential direction D1 of the support portion 6 and both end portions 72a of the outer wall 72 in the circumferential direction D1 overlap with each other in the radial direction D2 of the support portion 6. Both end portions 82a of the shutter inner wall 82 in the circumferential direction D1 and both end portions 71a of the inner wall 71 in the circumferential direction D1 overlap with each other in the radial direction D2. In this case, by overlapping both end portions 83a, 72a with each other and both end portions 82a, 71a with each other, the overlapping area is made larger than when both end portions overlap with each other, for example, and it is possible to easily prevent gas leakage.

[0097] The substrate processing apparatus further includes a shutter driver 92 that raises and lowers the shutter 81 so as to change the size of the shutter gap GP2 while the shutter 81 closes the loading / unloading port 80. In this case, the shutter driver 92 can change the flow rate of the gas passing through the shutter gap GP2.

[0098] The shutter drive unit 92 has a shutter outer wall drive unit 94 which raises and lowers the shutter outer wall 83 to open and close the loading / unloading port 80, and a shutter inner wall drive unit 93 which raises and lowers the shutter inner wall 82 to change the size of the shutter gap GP2 when the loading / unloading port 80 is closed. In this case, the shutter outer wall drive unit 94 can operate the opening and closing of the loading / unloading port 80, and the shutter inner wall drive unit 93 can change the flow rate of gas passing through the shutter gap GP2.

[0099] The substrate processing apparatus further includes a chamber driver 91 that raises and lowers the inner wall 71 to change the size of the exhaust gap GP3, and a controller 100 that controls the chamber driver 91 and the shutter inner wall driver 93 to change the size of the shutter gap GP2 in accordance with the change in the size of the exhaust gap GP3. In this case, by controlling the chamber driver 91 and the shutter inner wall driver 93 to operate in conjunction with each other by the controller 100, the overall size of the exhaust gap GP3 can be easily changed.

[0100] The opening area AR1 of the exhaust gap GP3 is smaller than twice the area AR2 of the flow path formed by the enclosed space S4 along the circumferential direction D1 of the support part 6. In this case, the flow path resistance of the enclosed space S4 is smaller than the flow path resistance of the exhaust gap GP3, so that a pressure difference along the circumferential direction D1 in the enclosed space S4 is less likely to occur. This increases the uniformity of the pressure difference between the enclosed space S4 and the internal space S2 in the circumferential direction D1, further suppressing bias in the gas flow.

[0101] The substrate processing apparatus further includes a top plate 76 that faces the support 6 from above the internal space S2 in the chamber 7, and a heater 78 that heats the top plate 76. In this case, the internal space S2 is heated from below by the heater 61, and also from above by the heater 78. This suppresses the occurrence of natural convection due to the temperature difference between the top and bottom of the internal space S2. This also suppresses the effect of natural convection on the film thickness distribution.

[0102] The substrate processing apparatus further includes a top plate 76 that faces the support part 6 from above the internal space S2 in the chamber 7. The gas supply part 74 has a gas supply chamber 741 formed on the top plate 76 to accommodate a gas, and a plurality of gas supply ports 76a that are provided on the top plate 76 so as to be scattered along the surface facing the support part 6 and each of which sends out gas from within the gas supply chamber 741 toward the support part 6. In this case, by dispersing the points at which gas is supplied to the wafer W over a wide range over the internal space S2, it is possible to further suppress gas stagnation and further suppress vaporized matter remaining in the internal space S2.

[0103] The outer shape of the area surrounded by the inner wall 71 corresponds to the outer shape of the wafer W. In this case, it is possible to further suppress the bias of the gas flow caused by the difference in the distance between the outer edge of the wafer W and the inner wall 71. This makes it possible to further suppress the influence of the gas flow on the film thickness distribution.

[0104] <Modification> Although the embodiments according to the present disclosure have been described in detail above, various modifications may be made to the above-described embodiments within the scope of the gist of the present disclosure.

[0105] As described above, in the heat treatment device 5 according to the embodiment, the flow resistance of the enclosed space S4 is smaller than the flow resistance of the exhaust gap GP3, so that the pressure difference in the enclosed space S4 along the circumferential direction D1 is unlikely to occur. However, although the effect on the pressure loss of the gas flow is small, the pressure difference between the enclosed space S4 and the vicinity of the exhaust port 751 gradually increases with distance from the exhaust port 751. This may cause a bias in the gas flow rate due to the difference in the distance to the exhaust port.

[0106] FIG. 11 is a cross-sectional view illustrating a heat treatment apparatus according to a modified example. FIG. 12 is a perspective view illustrating a heat treatment apparatus according to a modified example. As shown in FIG. 11 and FIG. 12, the exhaust gap GP3 may increase as it moves away from the exhaust port 751 along the circumferential direction D1 of the support portion 6. As shown in FIG. 12, the height (length in the Z direction) of the inner wall 71 may be highest in the vicinity of the exhaust port 751 and may decrease as it moves away from the exhaust port 751. The height of the shutter inner wall 82 may decrease continuously from the inner wall 71 along the circumferential direction D1. The height of the shutter inner wall 82 may be lowest at a position of the shutter inner wall 82 facing the exhaust port 751. When the exhaust gap GP3 increases as it moves away from the exhaust port 751 along the circumferential direction D1, it is possible to suppress bias in the flow rate of gas due to a difference in the distance to the exhaust port 751.

[0107] As shown in FIG. 11, the sizes of the multiple air intake ports 76a and the multiple relay air intake ports 745a may be different from each other. The multiple air intake ports 76a and the multiple relay air intake ports 745a may be arranged so that the diameter of the air intake port increases as it moves away from the exhaust port 751. As shown in FIG. 11, the multiple air intake ports 76a and the multiple relay air intake ports 745a may be arranged so that the diameter of the air intake port increases for each air intake port as it moves away from the exhaust port 751. Alternatively, the multiple air intake ports 76a and the multiple relay air intake ports 745a may be arranged so that the diameter of the air intake port increases for each air intake port. Even when the multiple air intake ports 76a and the multiple relay air intake ports 745a are arranged so that the diameter of the air intake port increases as it moves away from the exhaust port 751, it is possible to suppress bias in the gas flow rate due to the difference in distance to the exhaust port 751.

[0108] FIG. 13 is a plan view illustrating a schematic internal configuration of the chamber 7 in a heat treatment apparatus according to another modified example. The area of ​​the flow path of the enclosed space S4 formed along the circumferential direction D1 of the support part 6 may increase as it moves away from the exhaust port 751 along the circumferential direction D1. As shown in FIG. 13, the width (length in the radial direction D2) of the chamber space S1 may increase as it moves away from the exhaust port 751. The width of the shutter space S3 may increase continuously from the chamber space S1 along the circumferential direction D1. The width of the shutter space S3 may be the largest at a position facing the exhaust port 751 of the shutter inner wall 82. Even when the area of ​​the flow path of the enclosed space S4 increases as it moves away from the exhaust port 751 along the circumferential direction D1, it is possible to suppress bias in the gas flow rate due to the difference in distance to the exhaust port 751.

[0109] The gist of this disclosure is as follows [1] to

[20] . [1] A substrate processing apparatus comprising: a support part for supporting a substrate; a chamber for accommodating the substrate supported by the support part; and a heater provided on the support part for heating the substrate supported by the support part, wherein the chamber has: an air supply part for supplying gas from above to the substrate supported by the support part; an inner wall for surrounding the substrate supported by the support part; an outer wall for surrounding the inner wall so as to form an annular enclosed space between the inner wall and the outer wall; an exhaust gap formed in an annular shape between the inner wall and the support part, communicating an internal space of the inner wall with the enclosed space; and an exhaust part for exhausting the gas from the enclosed space to the outside of the chamber. [2] The substrate processing apparatus according to [1], further comprising a chamber drive unit that raises and lowers the inner wall so as to change the size of the exhaust gap. [3] The substrate processing apparatus according to [2], further comprising a control unit that controls the chamber drive unit so as to increase the exhaust gap as the heating time of the substrate by the heater elapses. [4] The substrate processing apparatus described in [3], further comprising an exhaust valve that changes the opening degree of the exhaust flow path of the gas in the exhaust section, wherein the control unit further controls the exhaust valve to increase the opening degree of the exhaust flow path as the heating time elapses. [5] A substrate processing apparatus as described in [3] or [4], further comprising an air supply valve that changes the opening degree of the gas supply flow path in the air supply section, wherein the control section further controls the air supply valve to increase the opening degree of the air supply flow path as the heating time elapses. [6] The substrate processing apparatus according to any one of [2] to [5], further comprising a control unit that controls the chamber drive unit to change the size of the exhaust gap based on information about a coating to be formed on the substrate supported by the support unit. [7] The substrate processing apparatus described in any one of [1] to [6], wherein the chamber further has a loading / unloading port formed on the inner wall and the outer wall so that the substrate can be loaded and unloaded into the internal space, and a shutter for opening and closing the loading / unloading port, the shutter having a shutter inner wall corresponding to the inner wall, and a shutter outer wall corresponding to the outer wall so as to form a shutter space constituting a part of the enclosed space between the shutter inner wall and the shutter inner wall, and wherein when the shutter is in a state where the shutter closes the loading / unloading port, a shutter gap constituting a part of the exhaust gap is formed between the shutter inner wall and the support. [8] A substrate processing apparatus as described in [7], wherein both ends of the shutter outer wall in the circumferential direction of the support portion and both ends of the outer wall in the circumferential direction overlap each other in the radial direction of the support portion, and both ends of the shutter inner wall in the circumferential direction and both ends of the inner wall in the circumferential direction overlap each other in the radial direction. [9] The substrate processing apparatus described in [7] or [8], further comprising a shutter drive unit that raises and lowers the shutter so as to change the size of the shutter gap while the shutter closes the loading / unloading port.

[10] The substrate processing apparatus described in [9], further comprising a chamber drive unit that raises and lowers the inner wall to change the size of the exhaust gap, and a control unit that links the chamber drive unit and the shutter drive unit to change the size of the shutter gap in accordance with the change in the size of the exhaust gap.

[11] The substrate processing apparatus according to any one of [1] to

[10] , wherein an opening area of ​​the exhaust gap is smaller than twice the area of ​​a flow path formed by the enclosed space along a circumferential direction of the support part.

[12] The substrate processing apparatus according to any one of [1] to

[11] , further comprising: a top plate facing the support part from above the internal space within the chamber; and a second heater for heating the top plate.

[13] The substrate processing apparatus according to any one of [1] to

[12] , wherein the exhaust section has an exhaust port opening into the enclosed space, and the exhaust gap becomes larger as it moves away from the exhaust port along the circumferential direction of the support section.

[14] The substrate processing apparatus according to any one of [1] to

[13] , wherein the exhaust section has an exhaust port opening into the enclosed space, and an area of ​​a flow path of the enclosed space formed along a circumferential direction of the support section increases as the flow path moves away from the exhaust port along the circumferential direction.

[15] A substrate processing apparatus as described in any one of [1] to

[14] , further comprising a top plate facing the support part from above the internal space within the chamber, wherein the air supply part has an air supply chamber formed on the top plate to contain the gas, and a plurality of air supply ports provided in the top plate to be scattered along a surface facing the support part, each of which sends out the gas from within the air supply chamber toward the support part.

[16] The substrate processing apparatus described in

[15] , wherein the exhaust section has an exhaust port opening into the enclosed space, the sizes of the multiple air inlets are different from one another, and the multiple air inlets are arranged so that the air inlets become larger as they move away from the exhaust port.

[17] The substrate processing apparatus according to any one of [1] to

[16] , wherein an outer shape of the area surrounded by the inner wall corresponds to an outer shape of the substrate.

[18] A substrate processing method comprising: heating a substrate with a heater provided on a support portion supporting the substrate; supplying a gas to the substrate from above; flowing the gas from an internal space of an inner wall through an exhaust gap formed in an annular shape between an inner wall surrounding the substrate and the support portion toward an annular enclosed space formed between the inner wall and an outer wall surrounding the inner wall; and exhausting the gas from the enclosed space to the outside of a chamber accommodating the substrate.

[19] A substrate processing program that causes a computer to execute a substrate processing method, the substrate processing method including: heating a substrate with a heater provided on a support that supports the substrate; supplying a gas to the substrate from above; flowing the gas from an internal space of the inner wall through an exhaust gap formed in an annular shape between an inner wall that surrounds the substrate and the support, toward an annular enclosed space formed between the inner wall and an outer wall that surrounds the inner wall; and exhausting the gas from the enclosed space to the outside of a chamber that contains the substrate.

[20]

[19] A computer-readable storage medium storing the program described in the above. [Explanation of symbols]

[0110] 3... processing station (substrate processing apparatus), 6... support section, 61... heater, 7... chamber, 71... inner wall, 71a... both ends of inner wall, 72... outer wall, 72a... both ends of outer wall, 74... air supply section, 75... exhaust section, 76... top plate, 76a... air supply port, 78... heater (second heater), 80... loading / unloading port, 81... shutter, 82... inner wall of shutter, 82a... both ends of inner wall of shutter, 83... outer wall of shutter, 83a... outer wall of shutter both ends, 91...chamber drive unit, 92...shutter drive unit, 100...control unit, 741...air supply chamber, 743...air supply flow path, 744...air supply valve, 751...exhaust port, 772...exhaust flow path, 773...exhaust valve, AR1...opening area, AR2...area, D1...circumferential direction, D2...radial direction, G2...shutter gap, G3...exhaust gap, S2...internal space, S3...shutter space, S4...surrounding space, W...wafer (substrate).

Claims

1. A support portion that supports the substrate; a chamber that accommodates the substrate supported by the support; a heater provided on the support portion so as to heat the substrate supported on the support portion; Equipped with The chamber comprises: an air supply unit that supplies gas from above to the substrate supported by the support unit; an inner wall surrounding the substrate supported by the support; an outer wall surrounding the inner wall to form an annular enclosed space between the outer wall and the inner wall; an exhaust gap formed in an annular shape between the inner wall and the support portion, the exhaust gap communicating an internal space of the inner wall with the enclosed space; an exhaust section that exhausts the gas from the enclosed space to the outside of the chamber; The substrate processing apparatus includes:

2. The substrate processing apparatus according to claim 1 , further comprising a chamber drive unit that raises and lowers the inner wall so as to change the size of the exhaust gap.

3. The substrate processing apparatus according to claim 2 , further comprising a control unit that controls the chamber drive unit so as to increase the exhaust gap as a heating time of the substrate by the heater elapses.

4. The exhaust gas supply system further includes an exhaust valve for changing an opening degree of an exhaust flow path of the gas in the exhaust unit, The substrate processing apparatus according to claim 3 , wherein the control unit further controls the exhaust valve so as to increase an opening degree of the exhaust flow path as the heating time elapses.

5. The gas supply unit further includes an intake valve for changing an opening degree of an intake flow path of the gas in the intake unit, The substrate processing apparatus according to claim 3 , wherein the control unit further controls the air supply valve to increase an opening degree of the air supply passage as the heating time elapses.

6. The substrate processing apparatus according to claim 2 , further comprising a control unit that controls the chamber drive unit so as to change a size of the exhaust gap based on information about a film formed on the substrate supported by the support unit.

7. The chamber comprises: an inlet / outlet formed on the inner wall and the outer wall so that the substrate can be loaded into and unloaded from the internal space; A shutter for opening and closing the loading / unloading port; Further comprising: The shutter is a shutter inner wall corresponding to the inner wall; a shutter outer wall corresponding to the outer wall so as to form a shutter space constituting a part of the enclosed space between the shutter inner wall and the shutter outer wall; having The substrate processing apparatus according to any one of claims 1 to 6, wherein when the shutter closes the loading / unloading port, a shutter gap constituting a part of the exhaust gap is formed between the shutter inner wall and the support portion.

8. both ends of the shutter outer wall in a circumferential direction of the support portion and both ends of the outer wall in the circumferential direction overlap each other in a radial direction of the support portion, The substrate processing apparatus according to claim 7 , wherein both end portions of the inner wall of the shutter in the circumferential direction and both end portions of the inner wall in the circumferential direction overlap with each other in the radial direction.

9. The substrate processing apparatus according to claim 7 , further comprising a shutter drive unit that raises and lowers the shutter so as to change a size of the shutter gap while the shutter closes the loading / unloading port.

10. a chamber actuator that raises and lowers the inner wall so as to change the size of the exhaust gap; The substrate processing apparatus according to claim 9 , further comprising: a control unit that causes the chamber drive unit and the shutter drive unit to operate in conjunction with each other so as to change the size of the shutter gap in accordance with the change in the size of the exhaust gap.

11. The opening area of ​​the exhaust gap is 7. The substrate processing apparatus according to claim 1, wherein the area of ​​the enclosed space is smaller than twice the area of ​​a flow path formed along a circumferential direction of the support portion.

12. a top plate disposed within the chamber and facing the support portion from above the internal space; The substrate processing apparatus according to claim 1, further comprising: a second heater for heating the top plate.

13. the exhaust section has an exhaust port that opens into the enclosed space, 7. The substrate processing apparatus according to claim 1, wherein the exhaust gap increases in a circumferential direction of the support part as it moves away from the exhaust port.

14. the exhaust section has an exhaust port that opens into the enclosed space, 7. The substrate processing apparatus according to claim 1, wherein an area of ​​a flow path of the enclosed space formed along a circumferential direction of the support part increases with increasing distance from the exhaust port along the circumferential direction.

15. a top plate disposed inside the chamber and facing the support portion from above the internal space; The air supply section includes: an air supply chamber formed on the top plate to accommodate the gas; 7. The substrate processing apparatus according to claim 1, further comprising: a plurality of air supply ports provided on the top plate so as to be scattered along a surface facing the support portion, each of the air supply ports sending out the gas from within the air supply chamber toward the support portion.

16. the exhaust section has an exhaust port that opens into the enclosed space, The sizes of the plurality of air intake ports are different from one another, The substrate processing apparatus according to claim 15 , wherein the plurality of air supply ports are arranged so that the air supply ports become larger as they are spaced apart from the exhaust port.

17. 7. The substrate processing apparatus according to claim 1, wherein an outer shape of the area surrounded by the inner wall corresponds to an outer shape of the substrate.

18. heating the substrate by a heater provided on a support portion that supports the substrate; supplying a gas to the substrate from above; flowing a gas from an internal space of the inner wall toward an annular surrounding space formed between the inner wall and an outer wall surrounding the inner wall through an exhaust gap formed in an annular shape between the inner wall surrounding the substrate and the support; and exhausting the gas from the enclosed space outside a chamber containing the substrate.

19. heating the substrate by a heater provided on a support portion that supports the substrate; supplying a gas to the substrate from above; flowing a gas from an internal space of the inner wall toward an annular surrounding space formed between the inner wall and an outer wall surrounding the inner wall through an exhaust gap formed in an annular shape between the inner wall surrounding the substrate and the support; and discharging the gas from the surrounding space to outside a chamber that accommodates the substrate.

20. A computer-readable storage medium storing the program according to claim 19.

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