Display device

Abstract

To provide a liquid crystal display device the numerical aperture of which is high.SOLUTION: The display device includes a first conductive layer, a second conductive layer, and a liquid crystal element having a liquid crystal layer provided between a third conductive layer and a fourth conductive layer, the first to fourth conductive layers having light transmissivity to visible light and each including a mutually overlapping region. The second conductive layer is provided between the first conductive layer and third conductive layer. An insulating layer is provided each of between the first conductive layer and the second conductive layer and between the second conductive layer and the third conductive layer. This results in a structure in which two capacitive elements are laminated having the second conductive layer as an electrode. These two capacitive elements have light transmissivity and are of such a structure in which liquid crystal elements overlap, which makes it possible to increase an aperture ratio.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a liquid crystal display device and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), These driving methods and manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, metal oxides that exhibit semiconducting properties have been used in transistors instead of silicon semiconductors. For example, Patent Document 1 and Patent Document 2 disclose the following metal oxides: A transistor using zinc oxide or In-Ga-Zn oxide is manufactured. A technique for using a transistor as a switching element for a pixel of a display device has been disclosed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2007-123861 A [Patent Document 2] JP 2007-96055 A Summary of the Invention [Problem to be solved by the invention]

[0005] Display devices using liquid crystal elements or light-emitting elements can achieve high image quality by increasing the number of pixels per unit area. In the case of an active display element, a pixel has a display element. In addition to the elements, transistors, capacitance elements, wiring, etc. must be provided.

[0006] When the number of pixels per unit area increases, the occupancy of components that do not transmit light increases. The area becomes relatively large. In other words, the aperture ratio decreases. Therefore, the transmissive liquid crystal element For example, in order to display clear images on a large screen, the intensity of the backlight must be increased. The power consumption increases.

[0007] In addition, when the pixel area becomes very small, the horizontal electric field mode in which comb-shaped electrodes are arranged horizontally becomes necessary. Liquid crystal elements are difficult to design, and it is also difficult to increase the manufacturing yield.

[0008] Therefore, one object of one embodiment of the present invention is to provide a liquid crystal display device with a high aperture ratio. Another object is to provide a liquid crystal display device with low power consumption. Another object of the present invention is to provide a highly reliable liquid crystal display device. One object of the present invention is to provide a liquid crystal display device.

[0009] Note that the description of these problems does not preclude the existence of other problems. However, it is not necessary to solve all of these problems. It is possible to extract other issues from the description in the section. [Means for solving the problem]

[0010] One embodiment of the present invention is a liquid crystal display device provided with a capacitor element that transmits visible light. Regarding.

[0011] One embodiment of the present invention is a display device including a first conductive layer, a second conductive layer, and a liquid crystal element. The first conductive layer is a region to which a source electrode or a drain electrode of a transistor extends. The liquid crystal element has a third conductive layer, a liquid crystal layer, and a fourth conductive layer, and the liquid crystal layer has a third conductive layer. The first to fourth conductive layers are provided between the first conductive layer and the fourth conductive layer, and the first to fourth conductive layers are transparent to visible light. The first to fourth conductive layers have overlapping regions, and the second conductive layer is provided between the first conductive layer and the third conductive layer, and between the first conductive layer and the second conductive layer A first insulating layer is provided between the second conductive layer and the third conductive layer, and a second insulating layer is provided between the second conductive layer and the third conductive layer. The second conductive layer has a first opening, and the first insulating layer and the second insulating layer are The second conductive layer has a second opening, the second opening being provided inside the first opening, and the third conductive layer is The display device is electrically connected to the first conductive layer through the opening.

[0012] Another embodiment of the present invention is a liquid crystal display device having a first conductive layer, a second conductive layer, and a liquid crystal element. A display device, wherein the first conductive layer is an area to which a semiconductor layer of a transistor extends, and The liquid crystal element has a third conductive layer, a liquid crystal layer, and a fourth conductive layer. The liquid crystal layer is The first to fourth conductive layers are provided between the first conductive layer and the fourth conductive layer, and the first to fourth conductive layers have a light-transmitting property to visible light. The first to fourth conductive layers have mutually overlapping regions, and the second conductive layer has a first a first conductive layer between the first conductive layer and the third conductive layer, and a second conductive layer between the first conductive layer and the second conductive layer; a second insulating layer is provided between the second conductive layer and the third conductive layer; The second conductive layer has a first opening, and the first insulating layer and the second insulating layer have a second opening. The second opening is provided inside the first opening, and the third conductive layer has The display device is electrically connected to the first conductive layer through the second conductive layer.

[0013] The second conductive layer is a common electrode, and the first conductive layer, the second conductive layer and the first insulating layer are a first The second conductive layer, the third conductive layer, and the The second insulating layer can act as a second capacitive element.

[0014] The first to fourth conductive layers can be made of a metal oxide.

[0015] The transistor also has a fifth conductive layer that acts as a gate electrode. For the insulating layer 11, a metal oxide having transparency to visible light may be used.

[0016] The fifth conductive layer may have a region overlapping with the first to fourth conductive layers.

[0017] In addition, the transistor preferably has a metal oxide in a semiconductor layer in which a channel is formed. It is nice.

[0018] In this specification, a connector, such as an FPC (Flexible Printed Circuit) rinted circuit) or TCP (Tape Carrier Pack and a module with a printed wiring board at the end of the TCP. or a substrate on which display elements are formed, using the COG (Chip On Glass) method. In some cases, the display device may also include a module on which an IC (integrated circuit) is directly mounted. Effect of the Invention

[0019] According to one embodiment of the present invention, a liquid crystal display device with a high aperture ratio can be provided. It is possible to provide a liquid crystal display device with low power consumption. Also, it is possible to provide a high-definition liquid crystal display device. Alternatively, a highly reliable liquid crystal display device can be provided.

[0020] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. However, it is possible to extract effects other than these. [Brief description of the drawings]

[0021] [Figure 1] FIG. [Diagram 2] FIG. [Diagram 3] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 4] FIG. [Diagram 5] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 6] FIG. [Figure 7] FIG. [Figure 8] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 9] FIG. [Figure 10] FIG. [Figure 11] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 12] FIG. [Figure 13] FIG. 1 is a perspective view illustrating a display device. [Figure 14] FIG. 2 is a perspective view illustrating a touch panel and an input device. [Figure 15] FIG. 1 is a cross-sectional view illustrating a display device. [Figure 16] FIG. 1 is a cross-sectional view illustrating a display device. [Figure 17] FIG. 1 is a cross-sectional view illustrating a display device. [Figure 18] FIG. 2 is a diagram for explaining an arrangement of pixels. [Figure 19] FIG. 4 is a diagram showing an example of an operation mode. [Figure 20] 1A and 1B are diagrams illustrating examples of electronic devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various ways in form and detail without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. The present invention is not to be construed as being limited to the description in the form of the above.

[0023] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0024] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, in order to facilitate understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0025] The words "membrane" and "layer" may be interchangeable depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." ". Alternatively, for example, the term "insulating film" may be changed to It is possible to change the term to "insulating layer."

[0026] In this specification, the term "metal oxide" refers to a metal oxide in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductor (also called OS) For example, when a metal oxide is used for the semiconductor layer of a transistor, the metal An oxide may be referred to as an oxide semiconductor. In other words, the transistor may have a metal oxide or an oxide semiconductor. do.

[0027] In the present specification and the like, metal oxides having nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met de). It may also be called tetrahydrofuran (tetrahydrofuran) oxynitride.

[0028] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0029] A display device according to one embodiment of the present invention includes a first conductive layer, a second conductive layer, and a liquid crystal element. In addition, the liquid crystal element has a structure in which a liquid crystal layer is provided between a third conductive layer and a fourth conductive layer. .

[0030] The first to fourth conductive layers are transparent to visible light and have overlapping regions. In addition, the second conductive layer is provided between the first conductive layer and the third conductive layer.

[0031] Between the first conductive layer and the second conductive layer, and between the second conductive layer and the third conductive layer, Therefore, two capacitance elements are stacked, each of which has an insulating layer formed thereon, and the second conductive layer is used as an electrode. It has a layered structure.

[0032] The two capacitance elements are transparent and overlap with the liquid crystal element, so that the aperture ratio is increased. This allows the display device to have a high display quality and reduce power consumption. High precision can be achieved.

[0033] FIG. 1 is a perspective view illustrating main elements provided in a pixel of a liquid crystal display device according to one embodiment of the present invention. FIG. 2 is a vertically expanded view of the perspective view. For clarity, the diagram is simplified by omitting insulating layers, etc.

[0034] The pixel 10a includes a wiring 31, a wiring 32, a transistor 21, a conductive layer 42, and a conductive layer 4 3 and,

[0035] Here, the wiring 31 functions as a scanning line, and the wiring 32 functions as a signal line. The wiring 31 and the wiring 32 include a metal layer with low resistance in order to prevent a signal delay. It is preferable to form it by

[0036] In addition, a part of the wiring 31 and the region to which the wiring 31 extends are used as the gate of the transistor 21. Depending on the material used for the channel region of the transistor 21, The characteristics of the transistor 21 may change due to the light being transmitted through the wiring. By using the 31, external light or light from a backlight is irradiated onto the channel region. This can improve the reliability of the transistor 21.

[0037] The transistor 21 is a bottom-gate transistor and includes a semiconductor layer 25 and a conductive layer 41a. and a conductive layer 41b.

[0038] The conductive layer 41a functions as either a source or a drain. It is electrically connected to the wiring 32.

[0039] The conductive layer 41b functions as the other of the source and the drain. b functions as one or the other electrode of the capacitor element.

[0040] The conductive layer 42 functions as one or the other electrode of a capacitor element. 2 is a common electrode, which also functions as a capacitance line.

[0041] The conductive layer 43 functions as a pixel electrode of a liquid crystal element. It functions as one or the other electrode of the terminal.

[0042] The conductive layer 42 has an opening 42b. In the opening 42b, the conductive layer 41b and the conductive Layer 43 is electrically connected.

[0043] A first insulating layer (not shown in FIGS. 1 and 2) is provided between the conductive layer 41b and the conductive layer 42. Therefore, the conductive layer 41b and the conductive layer 42 are electrodes, and the first insulating layer is a dielectric. A capacitive element 26 can be formed.

[0044] In addition, a second insulating layer (not shown in FIGS. 1 and 2) is provided between the conductive layer 42 and the conductive layer 43. Therefore, the conductive layer 42 and the conductive layer 43 are electrodes, and the second insulating layer is a dielectric. Thus, the capacitance element 27 can be formed.

[0045] 3A is a top view of the pixel 10a. As shown in FIG. 3A, the wiring 31 and the wiring In the region other than the line 32, the conductive layer 41b, the conductive layer 42 and the conductive layer 43 are overlapped with each other. The electrodes are arranged to have a region.

[0046] In one embodiment of the present invention, the conductive layer 41b, the conductive layer 42, the conductive layer 43, the first insulating layer, and The first insulating layer and the second insulating layer are formed of a material that transmits visible light. The conductive layer 43, which also functions as a pixel electrode, the capacitor element 26, and the capacitor element 27 overlap each other. Therefore, the aperture ratio of the pixel 10a can be increased. .

[0047] FIG. 3B is a cross-sectional view corresponding to the cross section taken along line A1-A2 shown in FIG. 3C is a cross-sectional view corresponding to the cross section taken along line A3-A4 shown in FIG. 3(B) and (C), the substrate 71, the substrate 72, and the liquid crystal element 7 5, cross sections of the colored layer 65, the light-shielding layer 66, etc. are also shown.

[0048] The liquid crystal element 75 is of a transmissive type and operates in a vertical electric field mode. The liquid crystal display device may have an alignment film 61, a liquid crystal layer 63, an alignment film 62, and a conductive layer 64. Cut.

[0049] In addition, an insulating layer is provided between each element as necessary. The insulating layer 51 functions as a gate insulating film of the transistor 21. The insulating layer 52 and the insulating layer 53 provided on the substrate 1 function as a protective film and a planarizing film, respectively. The insulating layer 55 provided between the colored layer 65 and the common electrode and between the light-shielding layer 66 and the common electrode is It functions as a protective film and a planarizing film. Note that the above-mentioned insulating layer is only an example. Alternatively, a part of the insulating layer may be omitted. good.

[0050] Here, the area where the conductive layer 41b, the insulating layer 52, the insulating layer 53 and the conductive layer 42 overlap is a capacitance The element 26 functions as the conductive layer 42. In addition, the conductive layer 43 is formed in an area where the conductive layer 42, the insulating layer 54, and the conductive layer 43 overlap each other. The capacitor 27 functions as a capacitor 27. It has a stacked type capacitance element with a common electrode.

[0051] When the number of pixels per unit area increases, the area of ​​the pixel inevitably becomes smaller, so the shape within the pixel The capacitance value of the capacitive element formed is reduced. Therefore, the function of holding the image signal is reduced. In one embodiment of the present invention, a stacked layer having an area where the capacitive element 26 and the capacitive element 27 overlap each other is formed. However, since one electrode is common, the capacitance element 26 and the capacitance element 27 are connected in parallel. Therefore, the capacitance value can be made larger than that of a configuration in which only one of the capacitance elements is provided. This makes it possible to suppress the deterioration of the function of retaining the image signal.

[0052] Also, a capacitance element 26 having a conductive layer 41b and a conductive layer 42, and a capacitance element 26 having a conductive layer 42 and a conductive layer The capacitance element 27 having the capacitance 43 is transparent to visible light.

[0053] Therefore, when light from the backlight is irradiated from the substrate 71 side, the light is directed in the direction indicated by the dashed arrow. The light from the backlight also passes through the opening 42b.

[0054] As shown in FIGS. 3B and 3C, the light from the backlight is guided to the outside through the colored layer 65. By extracting the light through the colored layer 65, the light can be colored to a desired color. The color of the colored layer 65 can be red (R), green (G), blue (B), cyan (C), magenta (Magenta), or blue (Yellow). The backlight is emitted from the board. Irradiation may also be performed from the 72 side.

[0055] As described above, by using the structure of one embodiment of the present invention, a liquid crystal display device with a high aperture ratio can be provided. Therefore, a clear image can be formed without increasing the intensity of the backlight. It is possible to display the image, and the power consumption of the liquid crystal display device can be reduced.

[0056] The liquid crystal display device of one embodiment of the present invention has a pixel 10b shown in a perspective view in FIG. It's fine.

[0057] FIG. 4B is a perspective view of the transistor 21 and the wiring 31 in the pixel 10b. The pixel 10b is different from the pixel 10a in the configuration of the conductive layer that functions as the gate of the transistor 21. do.

[0058] The pixel 10a is configured to use the region where the wiring 31 extends as a gate, while the pixel 10b In this case, the conductive layer 33 that is transparent to visible light is used as the gate. The area of ​​the optical wiring 31 can be reduced.

[0059] Fig. 5(A) is a top view of the pixel 10b. Fig. 5(B) is a top view of the pixel 10b along the line B1- FIG. 5(C) is a cross-sectional view corresponding to the cross section of line B3-B4 shown in FIG. 1 is a cross-sectional view corresponding to a cut surface of FIG.

[0060] In the pixel 10b, in the region excluding the wiring 31 and the wiring 32, the conductive layer 33 and other elements are For example, the semiconductor layer 25 of the transistor 21 and the conductive layer 4 Light can be transmitted through the contact portion with 1b and the channel portion of the transistor 21. Therefore, the aperture ratio can be improved compared to that of the pixel 10a. Regardless of the pixel configuration, the semiconductor layer 25 is formed of a material that is transparent to visible light. It is possible.

[0061] In addition, in FIG. 4(A), (B) and FIG. 5(A), the wiring 31 is formed on the conductive layer 33. However, a conductive layer 33 may be formed on the wiring 31. .

[0062] The liquid crystal display device according to one embodiment of the present invention includes a pixel 10c shown in the perspective views of FIGS. Except for the transistor structure, pixel 10c has the same structure as pixels 10a and 10b. It has a similar configuration.

[0063] The pixel 10c has a self-aligned top-gate structure for the transistor. The transistor 22 includes a semiconductor layer 25, a conductive layer 41a, a conductive layer 41b, and a conductive layer 34. has.

[0064] The conductive layer 41a functions as either a source or a drain. The conductive layer 41b functions as the other of the source and drain of the capacitor element. The conductive layer 34 functions as a gate. do.

[0065] Fig. 8(A) is a top view of the pixel 10c. Fig. 8(B) is a top view of the pixel 10c along the line C1- FIG. 8(C) is a cross-sectional view corresponding to the cross section of line C3-C4 shown in FIG. 1 is a cross-sectional view corresponding to a cut surface of FIG.

[0066] In the pixel 10c, the semiconductor layer 2 is formed in the region other than the wiring 31, the wiring 32, and the conductive layer 34. The area where the 5 overlaps with other elements also has light transmittance. Therefore, the aperture ratio can be improved. The conductive layer 34 can be made of a low resistance material such as a metal. As shown in (A), the conductive layer 34 is replaced with a conductive layer 34b that is transparent to visible light. By adopting this configuration, the aperture ratio can be further improved.

[0067] In addition, as shown in FIG. 8B, in the case of a transistor having a top gate structure, the substrate 71 and It is preferable to provide an insulating layer 56 between the semiconductor layer 25. It is possible to prevent impurities from diffusing from the substrate 71 to the semiconductor layer 25. When an oxide semiconductor is used for the insulating layer 56 and the protective film 57, the semiconductor The oxygen vacancies in the conductor layer 25 can be compensated for, and the reliability of the transistor can be improved. Cut.

[0068] A liquid crystal display device according to an embodiment of the present invention has a structure including a pixel 10d shown in FIG. 9 and FIG. The pixel 10d is different in that the shape of the semiconductor layer 25 is different, and the conductive layer 41a and the conductive layer 41b are different. The pixel 10c has a similar configuration to the pixel 10c, except that it does not have the conductive layer 41b.

[0069] In the transistor 22, the semiconductor layer 25 functions as either a source or a drain. and region 25c which functions as the other of the source and drain.

[0070] In the transistor 22 of pixel 10c, region 25b functions as either a source or a drain. In the pixel 10d, the transistor 22 has a conductive layer 41a connected to the region 2. 5b and wiring 32 are directly connected.

[0071] In addition, the transistor 22 of the pixel 10c has a region 25c as the other of the source or drain. The conductive layer 41b is connected to the capacitor 26. On the other hand, in the transistor 22 of the pixel 10d, the region 25c is extended to It is used as an electrode of the capacitance element 26.

[0072] Therefore, the steps for forming the conductive layers 41a and 41b can be omitted. The manufacturing costs can be reduced.

[0073] Fig. 11(A) is a top view of the pixel 10d. Fig. 11(B) is a top view of the line segment shown in Fig. 11(A). FIG 11(C) is a cross-sectional view corresponding to the cut surface taken along the line D1-D2 shown in FIG 11(A). FIG. 2 is a cross-sectional view corresponding to the cross section taken along line D3-D4.

[0074] In the pixel 10d, similarly to the pixel 10c, the area excluding the wiring 31, the wiring 32, and the conductive layer 34 In this case, the region where the semiconductor layer 25 overlaps with other elements also has light transmitting properties. As shown in FIG. 12B, the conductive layer 34 is irradiated with visible light. The conductive layer 34b may be replaced with a conductive layer 34b having a light-transmitting property with respect to the light. The aperture ratio can be improved significantly.

[0075] In addition, since the pixel 10d does not have the conductive layer 41b, the transmittance at the opening is also lower than that of the pixel 10c. It will also be more expensive.

[0076] As shown in FIG. 11B, the semiconductor layer 25 has a region 25 which functions as a channel forming region. a, a region 25b functioning as one of a source or a drain, and a region The region 25b and the region 25c function as the other of the low resistance regions. By performing a plasma treatment or a doping treatment using the conductive layer 34 as a mask, It can be formed by introducing impurities into the semiconductor layer 25 to generate oxygen vacancies. .

[0077] The following materials can be used for the transistors, wirings, capacitors, and the like. These materials are used for the semiconductor layers and the semiconductor layer that transmit visible light in the other configuration examples shown in this embodiment mode. The present invention can also be applied to the conductive layer.

[0078] The semiconductor layer of the transistor can be formed using a light-transmitting semiconductor material. As the light-transmitting semiconductor material, a metal oxide or an oxide semiconductor (Oxid The oxide semiconductor is at least indium. It is preferable that the alloy contains indium and zinc. It is particularly preferable that the alloy contains indium and zinc. In addition to these, aluminum, gallium, yttrium, copper, vanadium, beryllium, Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium The composition may contain one or more selected from the group consisting of ammonium nitrate, ammonium nitrate, and the like.

[0079] The conductive layer of the transistor can be formed using a light-transmitting conductive material. The light-transmitting conductive material is one selected from the group consisting of indium, zinc, and tin, or It is preferable to use a plurality of kinds of conductive materials. Specific examples of the conductive material having light-transmitting properties include In oxide, I n-Sn oxide (also called ITO: Indium Tin Oxide), In-Zn oxide oxide, In-W oxide, In-W-Zn oxide, In-Ti oxide, In-Sn-Ti oxide Examples of oxides include In-Sn-Si oxide, Zn oxide, and Ga-Zn oxide.

[0080] In addition, an oxide semiconductor device having a low resistance, for example, by incorporating an impurity element into a conductive layer of a transistor, The oxide semiconductor having a low resistance may be an oxide conductor (OC: It can be called a ferroelectric.

[0081] For example, an oxide conductor is formed by forming oxygen vacancies in an oxide semiconductor and adding hydrogen to the oxygen vacancies. By this, a donor level is formed near the conduction band. As a result, the oxide semiconductor becomes highly conductive and becomes a conductor.

[0082] In addition, oxide semiconductors have a large energy gap (for example, an energy gap of 2 0.5 eV or more), it is transparent to visible light. The material conductor is an oxide semiconductor having a donor level near the conduction band. Conductors are less affected by absorption due to donor levels, and exhibit the same level of absorption as oxide semiconductors for visible light. It has a light transmittance of .

[0083] In addition, the oxide conductor may be formed by adding one or more metal elements contained in a semiconductor layer of a transistor. It is preferable that the oxide semiconductors constituting the transistors each have the same metal element. By using this material for two or more layers, the manufacturing equipment (e.g., deposition equipment, processing equipment, etc.) can be reduced by two or more Since it can be commonly used in the above steps, the manufacturing cost can be reduced.

[0084] By using the pixel structure of the liquid crystal display device described in this embodiment, This allows the light emitted from the LED to be used efficiently. This reduces power consumption. In addition, an excellent liquid crystal display device can be provided.

[0085] Next, the liquid crystal display device of the present embodiment will be described with reference to FIG. 13 is a perspective view of the device 100A, partially enlarged. Therefore, the substrate 72 is shown by a dashed line, and components such as the polarizing plate 67 are omitted.

[0086] The display device 100A includes a display unit 162 and a drive circuit unit 164. The board is equipped with FPC172 and IC173.

[0087] The display unit 162 has a plurality of pixels and has a function of displaying an image. In FIG. 13, the pixel 10a is shown as an example of the sub-pixel. It may be pixel 10b, pixel 10c or pixel 10d.

[0088] For example, a red subpixel, a green subpixel, and a blue subpixel may be used. By forming one pixel, full color display can be performed on the display unit 162. The colors of the sub-pixels are not limited to red (R), green (G), and blue (B). For example, the color of the color may be white (W), yellow (Y), magenta (M), or cyan (C). In this specification and the like, a sub-pixel may be simply referred to as a pixel. do.

[0089] The display device 100A includes a scanning line driving circuit and / or a signal line driving circuit. Alternatively, the display device may not have both the scanning line driver circuit and the signal line driver circuit. In the case where the display device 100A has a sensor such as a touch sensor, the display device 100A In the present embodiment, the driving circuit unit 164 may include a sensor driving circuit. The display unit 162 includes a scanning line driver circuit. It has the function of outputting a detection signal.

[0090] In the display device 100A, the IC 173 is mounted on the substrate 71 by a mounting method such as the COG method. The IC 173 is equipped with, for example, a signal line driver circuit, a scanning line driver circuit, and a sensor The driving circuit includes one or more.

[0091] The display device 100A is electrically connected to an FPC 172. Signals and power are supplied to the IC 173 and the drive circuit unit 164 from the outside. A signal can be output from IC 173 to the outside via FPC 172.

[0092] An IC may be mounted on the FPC 172. For example, the FPC 172 may include a signal line driver. An IC having one or more of a driving circuit, a scanning line driving circuit, and a sensor driving circuit. It may be implemented.

[0093] Signals and power are supplied to the display unit 162 and the drive circuit unit 164 via wiring 165. The signal and power are supplied from IC173 or from the outside via FPC172. , is input to wiring 165.

[0094] In addition, an input device 167 can be provided on the substrate 72. The configuration in which the device 167 is provided can function as a touch panel.

[0095] There is no limitation on a detection element (also referred to as a sensor element) included in a touch panel of one embodiment of the present invention. We offer a variety of sensors that can detect the proximity or contact of a finger, stylus, or other object. , can be applied as a sensing element.

[0096] The sensor type may be, for example, a capacitance type, a resistive film type, a surface acoustic wave type, or an infrared type. Various methods can be used, such as a pressure-sensitive method, an optical method, or a pressure-sensitive method.

[0097] In this embodiment, a touch panel having a capacitance type sensing element will be described as an example. .

[0098] The capacitive touch sensor includes a surface capacitive touch sensor and a projected capacitive touch sensor. The electrostatic capacitance type includes the self-capacitance type and the mutual capacitance type. This is preferable because it enables simultaneous multi-point detection.

[0099] The touch panel according to one embodiment of the present invention is formed by bonding a display device and a sensing element that are separately manufactured. A detector element is provided on one or both of a substrate supporting a display element and an opposing substrate. Various configurations can be applied, such as a configuration in which electrodes or the like are provided.

[0100] 14(A) and (B) show an example of a touch panel. FIG. 14(A) shows a touch panel 3 FIG. 14B is a perspective view of the input device 167. For clarity, only representative components are shown.

[0101] The touch panel 350A is constructed by bonding a display device and a sensing element that are separately manufactured. be.

[0102] The touch panel 350A includes an input device 167 and a display device 100A, which are overlapped with each other. It is set up as follows.

[0103] The input device 167 includes a substrate 163, an electrode 127, an electrode 128, a plurality of wirings 137, and a plurality of wirings 138. The electrode 127 has a line 138 and a number of wires 139. For example, the electrode 127 has the wire 137 or the wire The electrode 128 can be electrically connected to the wiring 139. The FPC 172b can be formed by connecting the plurality of wirings 137 and the plurality of wirings 138. The FPC 172b can be provided with an IC 173b.

[0104] Alternatively, a touch sensor may be provided between the substrate 71 and the substrate 72 of the display device 100A. When a touch sensor is provided between the substrate 71 and the substrate 72, a capacitive touch sensor is used. In addition, an optical touch sensor using a photoelectric conversion element may be applied.

[0105] FIG. 15A is a cross-sectional view including a display section 162, a driving circuit section 164, and wiring 165. FIG. 15A shows an example in which the configuration of the pixel 10a shown in FIGS. 1 to 3 is applied. However, the same configuration is obtained when the pixel 10b shown in FIG. 4 and FIG. 5 is applied.

[0106] As shown in FIG. 15A, the display device 100A includes a substrate 71, a transistor 21, a transistor A resistor 22, a liquid crystal element 75, an alignment film 61, an alignment film 62, a connection portion 68, an adhesive layer 73, and a colored layer. 65, a light-shielding layer 66, an insulating layer 55, a substrate 72, and a polarizing plate 130.

[0107] The display unit 162 is provided with a transmissive liquid crystal element 75 that operates in a vertical electric field mode. The crystal element 75 includes a conductive layer 43 that functions as a pixel electrode, a conductive layer 64 that functions as a common electrode, and a and a liquid crystal layer 63. An electric field generated between the conductive layer 43 and the conductive layer 64 causes the liquid crystal The liquid crystal layer 63 is disposed between the alignment film 61 and the alignment film 62. Place it.

[0108] There are two types of liquid crystal materials: positive type, in which the anisotropy of the dielectric constant (Δε) is positive, and negative type, in which the anisotropy is negative. In one embodiment of the present invention, either material can be used, and the applied model The optimum liquid crystal material can be used depending on the mode and design.

[0109] The liquid crystal element 75 may be a liquid crystal element to which various modes are applied. For example, A (Vertical Alignment) mode, TN (Twisted Nema tic) mode, IPS (In-Plane-Switching) mode, ASM (A xially Symmetric aligned Micro-cell) mode, OCB(Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode , AFLC (AntiFerroelectric Liquid Crystal) model Electrically Controlled Birefring (ECB) LCD elements that use the ence mode, VA-IPS mode, guest host mode, etc. It can be used.

[0110] In addition, the display device 100A uses a normally black type liquid crystal element, for example, a VA mode. A transmissive liquid crystal element may be used. main Vertical Alignment) mode, PVA(Patterne) d Vertical Alignment) mode, ASV (Advanced Su per View) mode can be used.

[0111] A liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. The optical modulation of liquid crystals is achieved by applying an electric field (horizontal electric field, vertical electric field, or The liquid crystal used in the liquid crystal element is thermoplastic. ropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC) Dispersed Liquid Crystal, Ferroelectric Liquid Crystal, Antiferroelectric Liquid Crystal These liquid crystal materials can exhibit a cholesteric phase, a smectic phase, etc., depending on the conditions. These phases include cubic phase, chiral nematic phase, isotropic phase, etc.

[0112] Since the display device 100A is a transmissive liquid crystal display device, the conductive layer 43 and the conductive layer 64 A conductive material that transmits visible light is used for both layers. A conductive material that transmits visible light can be used for one or more of the above. At least a part of the area where the transistor 21 is provided is also used as an effective area for display. It is possible.

[0113] Examples of conductive materials that transmit visible light include indium (In), zinc (Zn), and tin. It is preferable to use a material containing one or more selected from the group consisting of indium oxide, tin, and tin. Indium, indium tin oxide (ITO), indium zinc oxide, tungsten oxide Indium oxide, indium zinc oxide with tungsten oxide, indium zinc oxide with titanium oxide Indium oxide, indium tin oxide with titanium oxide, indium with silicon oxide Examples include tin oxide (ITSO), zinc oxide, and zinc oxide containing gallium. A graphene-containing film can also be used. The graphene-containing film can be, for example, graphene oxide. The film can be formed by reducing a film containing

[0114] The conductive layer 33, the conductive layer 34, the conductive layer 41a, the conductive layer 41b, and the conductive layer 42, conductive layer 43, and conductive layer 64, one or more of which is an embodiment of a metal oxide. It is preferable to use an oxide conductive layer. The oxide conductive layer is a layer including a semiconductor layer 2 of the transistor 21. It is preferable that the oxide conductive layer contains one or more of the metal elements contained in 5. For example, the oxide conductive layer In-M-Zn oxide (wherein M is Al, Ti, Ga, Y) is preferably used. , Zr, La, Ce, Nd, Sn or Hf) film is more preferable.

[0115] In addition, the conductive layer 33, the conductive layer 34, the conductive layer 41a, the conductive layer 41b, the conductive layer 42, and the conductive layer 43 and one or more of the conductive layers 64 are made of an oxide semiconductor, which is one type of metal oxide. The display device may be formed by using an oxide semiconductor having the same metal element. By using it for two or more layers, the manufacturing equipment (e.g., film forming equipment, processing equipment, etc.) can be used for two or more layers. Since it can be used in common in the process, the manufacturing cost can be reduced.

[0116] The oxide semiconductor has at least one of oxygen vacancies and impurity concentrations such as hydrogen and water in the film. On the other hand, oxide semiconductors are semiconductor materials whose resistance can be controlled. A treatment that increases at least one of oxygen vacancies and impurity concentration in the layer, or oxygen vacancies and By selecting a treatment that reduces at least one of the impurity concentrations, the usefulness of the oxide conductive layer can be improved. The resistivity can be controlled.

[0117] Note that the oxide conductive layer formed using the oxide semiconductor layer has a carrier density of A high-resistance and low-resistance oxide semiconductor layer, a conductive oxide semiconductor layer, or a highly conductive oxide semiconductor layer It can also be called a solid semiconductor layer.

[0118] In addition, by forming the oxide semiconductor layer and the oxide conductive layer using the same metal element, the manufacturing cost can be reduced. For example, by using a metal oxide target of the same metal composition, In addition, the oxide semiconductor layer and the oxide conductive layer can be formed by the above-mentioned method. The etching gas or etching solution used during processing can be used in common. The oxide semiconductor layer and the oxide conductive layer may have different compositions even if they contain the same metal element. For example, during the manufacturing process of a display device, metal elements in the film may be removed, resulting in a film with a different metal composition. This may be the case.

[0119] In the display device 100A, a colored layer 65 and a light-shielding layer 66 are provided on a liquid crystal layer 63. An insulating layer 55 is provided between the colored layer 65 and the light-shielding layer 66 and between the liquid crystal layer 63. The insulating layer 55 is preferably formed so that impurities contained in the colored layer 65 and the light-shielding layer 66 are prevented from penetrating into the liquid crystal layer. 63 and also functions as a planarizing film.

[0120] The substrate 71 and the substrate 72 are bonded together by an adhesive layer 73. 2 and the adhesive layer 73, the liquid crystal layer 63 is sealed.

[0121] When the display device 100A is made to function as a transmissive liquid crystal display device, the polarizing plate is In FIG. 15, the polarizing plate 67 on the substrate 72 side is shown. The light from the backlight arranged on the outer side of the polarizing plate provided on the plate 71 passes through the polarizing plate. At this time, the liquid crystal layer 63 is turned on by a voltage applied between the conductive layer 43 and the conductive layer 64. By controlling the orientation of the polarizer 67, the optical modulation of the light can be controlled. The intensity of the emitted light can be controlled. Also, the incident light is colored in a specific manner by the colored layer 65. Since light outside the wavelength range is absorbed, the emitted light is, for example, red (R), blue (B), or or green (G) light.

[0122] As the polarizing plate, for example, a circular polarizing plate can be used. For example, a linear polarizing plate and a quarter-wave retardation plate can be laminated. This makes it possible to reduce the viewing angle dependency of the display device.

[0123] The liquid crystal element 75 may also be driven using a guest-host liquid crystal mode. When using a stoichiometric liquid crystal mode, it is not necessary to use both or either of the polarizing plates. This reduces the light absorption by the plate, improving the light extraction efficiency and making the display brighter. It is possible.

[0124] The driving circuit unit 164 includes a transistor 23. The transistor 23 functions as a gate. The semiconductor layer includes a conductive layer 37 that functions as a gate insulating film, a semiconductor layer, a conductive layer 35, and a conductive layer 36. One of the conductive layers 35 and 36 functions as a source, and the other functions as a drain. .

[0125] The transistors provided in the driver circuit portion 164 do not necessarily have a function of transmitting visible light. Therefore, a low-resistance metal layer or the like is used for the conductive layer 36 and the conductive layer 37. It is possible.

[0126] At the connection portion 68, the wiring 165 and the conductive layer 44 are connected, and the conductive layer 44 and the connection body 45 are connected. That is, in the connection portion 68, the wiring 165 is connected to the FP via the conductive layer 44 and the connection body 45. This configuration allows the wiring to be Lines 165 may carry signals and power.

[0127] The transistor 21 and the transistor 22 may have the same structure or different structures. That is, the transistors in the driver circuit portion 164 and the transistors in the display portion 162 may be The transistors may have the same structure or different structures. However, the display unit 162 may have transistors of multiple structures. It may also have a transistor.

[0128] In FIG. 15A, one gate is provided for the transistor channel forming region. However, as in the case of transistor 23 shown in FIG. 15(B), Alternatively, two gates, the conductive layer 35 and the conductive layer 38, may be provided to sandwich the formation region.

[0129] The conductive layer 35 and the conductive layer 38 may be configured so that different potentials can be supplied to each of them. Alternatively, the two may be electrically connected. In the former case, the threshold voltage of the transistor It is effective in controlling voltage.

[0130] In addition, a transistor with two gates electrically connected to each other is It is possible to increase the field effect mobility and the on-current compared to As a result, a circuit capable of high speed operation can be fabricated. By using a transistor with a large on-current, the display Even if the number of wirings increases due to the larger size or higher resolution of the device, the signal delay in each wiring It is possible to reduce the amount of light emitted from the display and suppress uneven display. By applying this configuration, a highly reliable transistor can be realized.

[0131] In addition, when the conductive layer 38 is provided for the pixel 10b shown in FIG. 4 and FIG. 5, the conductive layer 38 It is preferable that the light-transmitting portion 14 is made of a material that is transparent to visible light.

[0132] FIG. 16A shows a display device 100 in which the configuration of the pixel 10c shown in FIGS. 6 to 8 is applied. 17(A) is a cross-sectional view of the pixel 10d shown in FIGS. 1 is a cross-sectional view of a display device 100A when a transistor 24 is used in the driving circuit section 164. will be established.

[0133] The transistors provided in the driver circuit portion 164 do not necessarily have a function of transmitting visible light. Therefore, a low-resistance metal layer or the like is used for the conductive layer 36 and the conductive layer 37. It is possible.

[0134] FIG. 16B and FIG. 17B show two transistors 22 and 24. FIG. 13 is a cross-sectional view in the case where a configuration in which a gate electrode is provided is applied.

[0135] In addition, the pixel 10c shown in FIG. 12(A) and the pixel 10d shown in FIG. 12(B) are conductive. In the case where the conductive layer 38 is provided, the conductive layer 38 is also formed of a material that transmits visible light. is preferred.

[0136] FIG. 18 is a top view showing an example of an arrangement in which the pixel 10a is a sub-pixel. The R, G, and B shown in the figure are examples of the colors of the colored layer 65 provided on the sub-pixel. In order to reduce viewing angle dependency, it is preferable to invert the pixel layout for each row. It is preferable that the pixels 10b, 10c, and 10d be arranged in the same manner. do.

[0137] Next, details of materials that can be used for each component of the display device of this embodiment will be described. In addition, the description of components that have already been described may be omitted. The following materials are also used in the display device and touch panel described below, as well as their components. It can be used appropriately.

[0138] <Substrates 71 and 72> There is no particular limitation on the material of the substrate of the display device of one embodiment of the present invention, and various substrates can be used. For example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, A composite substrate, a metal substrate, a plastic substrate, or the like can be used.

[0139] By using a thin substrate, the display device can be made lighter and thinner. Furthermore, by using a substrate that is thick enough to provide flexibility, a flexible display device can be realized. can.

[0140] In the display device of one embodiment of the present invention, a transistor or the like is formed over a formation substrate, and then a By using a fabrication substrate, the characteristics of Formation of good transistors, formation of transistors with low power consumption, and durable display devices To manufacture, impart heat resistance to a display device, and to reduce the weight or thickness of the display device. The substrate on which the transistor is transferred is a substrate on which a transistor can be formed. Not limited to substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk , cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (a acetate, cupra, rayon, recycled polyester, etc.), leather substrate, or rubber A substrate such as a rubber substrate can be used.

[0141] <Transistors 21, 22, 23, 24> Each transistor included in the display device of one embodiment of the present invention is a top-gate or bottom-gate transistor. Alternatively, gate electrodes may be provided above and below the channel. The semiconductor material used for the transistor is not particularly limited, and may be, for example, an oxide semiconductor, Examples include silicon and germanium.

[0142] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with partially crystalline regions) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0143] For example, Group 14 elements, compound semiconductors, or oxide semiconductors can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an indium An oxide semiconductor containing the above-mentioned compound can be used for the semiconductor layer.

[0144] An oxide semiconductor is preferably used as a semiconductor in which a channel of a transistor is formed. In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it is possible to reduce the current in the off state of the transistor.

[0145] By using an oxide semiconductor, fluctuations in electrical characteristics can be suppressed, resulting in highly reliable transistors. It can be achieved.

[0146] In addition, due to its low off-state current, the charge stored in the capacitance can be released through the transistor for a long period of time. By applying such transistors to pixels, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed. A display device with reduced power consumption can be realized.

[0147] The transistors 21, 22, 23, and 24 are made of a highly purified oxide that suppresses the formation of oxygen vacancies. It is preferable that the semiconductor layer is provided. This can reduce the off-state current of the transistor. This makes it possible to extend the retention time of electrical signals such as image signals, and In this state, the write interval can be set longer. This reduces the frequency of refresh operations. This has the effect of reducing power consumption.

[0148] In addition, the transistors 21, 22, 23, and 24 have relatively high field effect mobility. Therefore, high-speed driving is possible. When such a transistor capable of high-speed driving is used in a display device, By this, the transistors of the display section and the transistors of the driver circuit section are formed on the same substrate. That is, a semiconductor device formed of a silicon wafer or the like can be used as a driving circuit. Since there is no need to use a conductor device, the number of parts in the display device can be reduced. The display also uses transistors capable of high-speed operation, providing high-quality images. It is possible.

[0149] <Insulating layer> As insulating materials that can be used for the insulating layers, spacers, etc. of the display device, organic insulating materials are The insulating material may be an organic insulating material or an inorganic insulating material. resin, epoxy resin, polyimide resin, polyamide resin, polyimideamide resin, silicone resin Examples of the inorganic resin include cyclohexane resin, benzocyclobutene resin, and phenol resin. The insulating layer may be a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, or a silicon nitride film. aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film aluminum oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film Examples of the thin film include a lithium film and a neodymium oxide film.

[0150] <Conductive layer> In addition to the gates, sources, and drains of transistors, various wirings and electrodes of display devices Conductive layers include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, etc. Metals such as tungsten, molybdenum, silver, tantalum, or tungsten, or materials mainly composed of these metals The alloy may be used as a single layer or a multilayer structure. Two-layer structure with titanium film laminated on tungsten film, two-layer structure with titanium film laminated on tungsten film , a two-layer structure with a copper film laminated on a molybdenum film, and an alloy film containing molybdenum and tungsten A two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film. Two-layer structure: a titanium film or titanium nitride film, and a layer of titanium or titanium nitride on top of the titanium film or titanium nitride film. An aluminum or copper film is laminated, and then a titanium or titanium nitride film is formed on top of it. A three-layer structure consisting of a molybdenum film or molybdenum nitride film and a molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on the molybdenum film, and a molybdenum film is further laminated on the aluminum film or copper film. Alternatively, there is a three-layer structure in which a molybdenum nitride film is formed. For example, the conductive layer has a three-layer structure. In this case, the first and third layers are titanium, titanium nitride, molybdenum, tungsten, molybdenum, Alloys containing tungsten and molybdenum, alloys containing molybdenum and zirconium, or molybdenum nitride The first layer is made of copper, aluminum, gold, or silver, or copper and magenta. It is preferable to form a film made of a low resistance material such as an alloy of ITO and tantalum. Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc A light-transmitting conductive material such as lead oxide or ITSO may also be used.

[0151] Note that the oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor.

[0152] ≪Adhesive layer 73≫ The adhesive layer 73 is made of a hard material such as a thermosetting resin, a photocurable resin, or a two-liquid mixed type hardening resin. Chemically-compatible resins can be used. For example, acrylic resins, urethane resins, epoxy resins, Alternatively, a siloxane resin or the like can be used.

[0153] <Connector 45> The connector 45 may be, for example, an anisotropic conductive film (ACF). Conductive Film), or Anisotropic Conductive Paste (ACP) ropic conductive paste) can be used.

[0154] ≪Colored layer 65≫ The colored layer 65 is a colored layer that transmits light of a specific wavelength band. The materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. Examples include:

[0155] ≪Light-shielding layer 66≫ The light-shielding layer 66 is provided, for example, between adjacent colored layers 65 of different colors. A black matrix formed using a material or a resin material containing a pigment or a dye. can be used as the light-shielding layer 66. The light-shielding layer 66 can be formed by forming a light-shielding layer on the driving circuit section 164, etc. It is preferable to provide the display unit 162 in an area other than the display unit 162 because this can suppress light leakage due to guided light or the like. stomach.

[0156] The thin films (insulating film, semiconductor film, conductive film, etc.) that make up the display device are each formed by sputtering. method, Chemical Vapor Deposition (CVD) method , vacuum evaporation, pulsed laser deposition (PLD) tion) method, Atomic Layer Deposition (ALD) method ) method, etc. As an example of the CVD method, plasma chemical vapor deposition (P Examples of the thermal CVD method include the metal organic chemical vapor deposition (ECVD) method and the thermal CVD method. One example is metal organic chemical vapor deposition (MOCVD).

[0157] The thin films (insulating film, semiconductor film, conductive film, etc.) that make up the display device are formed by spin coating, Dip, spray application, inkjet printing, dispensing, screen printing, offset Printing, doctor knife, slit coat, roll coat, curtain coat, knife coat The film can be formed by a method such as a coating method.

[0158] The thin films constituting the display device can be processed using a photolithography method or the like. Alternatively, an island-shaped thin film may be formed by a film formation method using a shielding mask. Even if the thin film is processed by imprinting, sandblasting, or lift-off, The photolithography method involves forming a resist mask on the thin film to be processed, The thin film is processed by etching or the like, and the resist mask is removed. a method of forming a thin film by exposure and development, and then processing the thin film into a desired shape; There is.

[0159] In the photolithography method, the light used for exposure is, for example, i-line (wavelength 365 nm) ), g-line (wavelength 436 nm), h-line (wavelength 405 nm), and a mixture of these In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can be used. Alternatively, the exposure may be performed by immersion lithography. These include extreme ultraviolet (EUV) and X-rays. In addition, electron beams can be used instead of light for exposure. The use of a ray or an electron beam is preferable because it allows extremely fine processing. If the exposure is performed by scanning a beam such as a photon beam, a photomask is not required. be.

[0160] For etching thin films, there are dry etching, wet etching, and sandblasting methods. etc. can be used.

[0161] In this manner, a liquid crystal display device with a high aperture ratio and low power consumption can be manufactured.

[0162] This embodiment mode can be combined with other embodiment modes as appropriate.

[0163] (Embodiment 2) In this embodiment, operation modes that can be performed in a display device according to one embodiment of the present invention will be described. 19 will be used to explain.

[0164] In the following, we will assume that the device operates at a normal frame frequency (typically 60 Hz or higher and 240 Hz or lower). The normal drive mode operates at a low frame frequency, and the idle stop (I DS) drive mode will be described as an example.

[0165] In the IDS drive mode, the image data is written and then the image data is written. This is a driving method that stops switching of the image data. By extending the interval between writing the image data, the time required to write the image data during that time is reduced. The IDS driving mode can reduce the power consumption by the amount of power consumed by the driver. The frame frequency can be set to about 1 / 100 to 1 / 10 of the normal frame rate. The video signal is the same between frames. Therefore, the IDS driving mode can display still images. This is particularly effective when displaying images using IDS driving, which reduces power consumption. This reduces noise and screen flicker, helping to reduce eye strain.

[0166] 19(A) to 19(C) are circuit diagrams of a pixel circuit and a normal driving mode and an IDS driving mode. 19A is a timing chart for explaining the operation mode of the liquid crystal element 50. 1 and a pixel circuit 506 electrically connected to the liquid crystal element 501. In the pixel circuit 506 shown in FIG. 19(A), a signal line SL, a gate line GL, A transistor M1 connected to the gate line GL and a capacitance element connected to the transistor M1. Child Cs LC This shows that:

[0167] Transistor M1 is connected to data D 1 Therefore, the leakage path of transistor M1 The off-state current is preferably as small as possible. It is preferable to use a transistor having a metal oxide in the semiconductor layer. When the metal oxide has at least one of a current flowing property, a rectifying property, and a switching property, , metal oxide semiconductor or acid It can be called oxide semiconductor, or OS for short. As a typical example of a transistor, a transistor having an oxide semiconductor in a semiconductor layer where a channel is formed will be described below. The following describes a transistor using an OS transistor. A transistor that uses polycrystalline silicon has a lower leakage current ( The pixel electrode and the transistor of the liquid crystal element 501 are very low in the off-state current. The node to which either the source or drain of M1 and the capacitance element CsLC are connected is called the node By using an OS transistor for the transistor M1, The supplied charge can be retained for a long period of time.

[0168] In the circuit diagram shown in FIG. 19(A), the liquid crystal element 501 also receives data D 1 The leak path and Therefore, in order to perform the IDS drive appropriately, the resistivity of the liquid crystal element 501 should be set to 1.0×1 0 14 It is preferable to set the resistance at Ω·cm or more.

[0169] The channel region of the OS transistor is formed of, for example, In-Ga-Zn oxide, I In-Ga-Zn oxide and the like can be preferably used. Typically, a composition of In:Ga:Zn=4:2:4.1 (atomic ratio) is used. It is possible.

[0170] FIG. 19B shows the signals applied to the signal line SL and the gate line GL in the normal drive mode. 1 is a timing chart showing the waveform of a signal. In the normal drive mode, the signal is generated at a normal frame frequency ( For example, 60 Hz. 1 From T 3Each frame A scanning signal is applied to the gate line GL during the period, and data D is output from the signal line SL. 1 The liquid crystal element 501 and and capacitance element Cs LC This operation is performed for a period T 1 From T 3 Same as above Data D 1 or writing different data.

[0171] On the other hand, FIG. 19C shows that the signal line SL and the gate line GL in the IDS drive mode are 1 is a timing chart showing the waveforms of signals applied to the IDS drive. The period of one frame is T 1 In this case, the data is The write period is T W , the data retention period is period T RET The IDS drive mode is , period T W A scanning signal is applied to the gate line GL, and data D of the signal line SL is 1 Write, period T RET The gate line GL is fixed to a low level voltage, and the transistor M1 is turned off. The data D that was written once 1 In addition, the slow frame frequency and For example, the frequency may be set to be equal to or higher than 0.1 Hz and lower than 60 Hz.

[0172] Therefore, by using the IDS drive mode, it is possible to reduce power consumption.

[0173] This embodiment mode can be combined with other embodiment modes as appropriate.

[0174] (Embodiment 3) In this embodiment, the present invention can be used for a semiconductor layer of a transistor disclosed in one embodiment of the present invention. In addition, a metal oxide is used for the semiconductor layer of a transistor. In this case, the metal oxide may be interpreted as an oxide semiconductor.

[0175] Oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As a crystalline oxide semiconductor, CAAC-OS (c-axis-aligned crystal-like oxide semiconductor) talline oxide semiconductor), polycrystalline oxide semiconductor, n c-OS(nanocrystalline oxide semiconductor ), pseudo-amorphous oxide semiconductor (a-like OS) xide semiconductor, and amorphous oxide semiconductor.

[0176] In addition, the semiconductor layer of the transistor disclosed in one embodiment of the present invention may include CAC-OS (Clo ud-Aligned Composite oxide semiconductor ) may also be used.

[0177] Note that the semiconductor layer of the transistor disclosed in one embodiment of the present invention is preferably a semiconductor layer formed of the above-described non-single-crystal oxide. In addition, a non-single-crystal oxide semiconductor or a CAC-OS can be preferably used. As the OS, nc-OS or CAAC-OS can be preferably used.

[0178] Note that in one embodiment of the present invention, CAC-OS is preferably used for a semiconductor layer of a transistor. By using CAC-OS, it is possible to provide transistors with high electrical characteristics and high reliability. It can be granted.

[0179] The following provides details about CAC-OS.

[0180] CAC-OS or CAC-metal oxide is a material that has the function of electrical conductivity. A part of the material has an insulating function, and the material as a whole has a semiconductor function. Note that CAC-OS or CAC-metal oxide is used as the channel of a transistor. When used in a forming region, the conductive function is to allow the flow of electrons (or holes) that serve as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. The function of switching (O Add the function to turn the power on / off to CAC-OS or CAC-metal oxide. In the case of CAC-OS or CAC-metal oxide, By separating these functions, the functionality of both can be maximized.

[0181] In addition, CAC-OS or CAC-metal oxide is used in conductive areas and insulating areas. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region in the material are formed by nanoparticle layers. The conductive and insulating regions may be separated by a gap in the material. In addition, the conductive regions are observed as connected clouds with blurred edges. This may be the case.

[0182] In addition, in the CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be present in the material:

[0183] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxi de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In the case of this configuration, when a carrier flows, In the narrow gap component, carriers mainly flow. The component having a narrow gap acts complementary to the component having a wide gap. Carriers also flow to the wide gap component in conjunction with the component with a large gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on-state, i.e., a large on-current. And high field effect mobility can be obtained.

[0184] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite) or metal matrix composite (metal matrix It can also be called atrix composite.

[0185] For example, the elements constituting the metal oxide in the CAC-OS are 0.5 nm or more and 10 nm or less. Preferably, the material is unevenly distributed in a size range of 1 nm to 2 nm or in the vicinity thereof. In the following, it is assumed that one or more metal elements are unevenly distributed in a metal oxide. The region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm. A mixed state in which the size is less than or close to one m is also called a mosaic or patch pattern.

[0186] The metal oxide preferably contains at least indium. In addition to these, aluminum, gallium, yttrium, zinc, etc. are preferably contained. Lithium, Copper, Vanadium, Beryllium, Boron, Silicon, Titanium, Iron, Nickel, Gel Manium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum One or more of the following materials are included: tantalum, tungsten, or magnesium. It may be possible.

[0187] For example, CAC-OS made of In-Ga-Zn oxide (In-Ga-Zn oxide is one of the CAC-OS) a-Zn oxide may be specifically referred to as CAC-IGZO) is an indium oxide ( Below, InO X1 (where X1 is a real number greater than 0), or indium zinc oxide (Hereinafter, In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0.) ) and gallium oxide (GaO X3 (X3 is a real number greater than 0), and or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z4 are 0 The material is separated into two parts, resulting in a mosaic-like shape. InO X1 , or In X2 Zinc Y2 O Z2 is uniformly distributed in the film (hereafter , also called cloud-like).

[0188] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 OZ2 , or InO X1 A composite metal oxide having a structure in which a region in which In this specification, for example, the atomic ratio of In to the element M in the first region is The first region has an atomic ratio of In to the element M in the second region that is greater than the atomic ratio of In in the second region. The concentration of In is higher than in the region

[0189] IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO 3 (ZnO) m1 (m1 is a natural number), or In ( 1+x0) Ga (1-x0) O 3 (ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of the crystalline compounds include those which are

[0190] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned in the ab plane. is a non-oriented connected crystal structure.

[0191] On the other hand, CAC-OS is a material structure of metal oxide. CAC-OS is a material structure of In, Ga In a material composition containing Zn and O, nanoparticles mainly composed of Ga were observed in some areas. The regions where the In is mainly contained are observed as nanoparticles, and the regions where the In is mainly contained as nanoparticles are observed. Therefore, in CAC-OS, The crystal structure is a secondary factor.

[0192] It should be noted that the CAC-OS does not include a laminated structure of two or more films having different compositions. For example, a structure consisting of two layers, a film mainly made of In and a film mainly made of Ga, is not included. do not have.

[0193] In addition, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 but In some cases, a clear boundary between the region of the main component and the region of the main component may not be observed.

[0194] Instead of gallium, aluminum, yttrium, copper, vanadium, and beryllium can be used. , boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum , lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium When one or more metallic elements selected from the group consisting of sodium and sodium are included, the CAC-O S has a region where the metal element is the main component and a region where In is the main component. The nanoparticle-like regions that are the components of the nanoparticles are randomly distributed in a mosaic pattern. This refers to a configuration in which

[0195] CAC-OS is formed by sputtering without intentionally heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the deposition gas and The gas is selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. One or more of these may be used. The lower the flow rate ratio of the gas, the more preferable. For example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%. Or, it is preferable to set it to 0% or more and 10% or less.

[0196] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan by the out-of-plane method, In other words, no clear peaks are observed in the measurement region from the X-ray diffraction. It can be seen that no orientation in the ab plane direction or the c-axis direction is observed.

[0197] In addition, CAC-OS irradiates electron beams with a probe diameter of 1 nm (also called nanobeam electron beams). In the electron beam diffraction pattern obtained by the above, a ring-shaped region with high brightness and the phosphorus Therefore, the electron diffraction pattern indicates that the CAC-OS The crystal structure of nc (nano- It can be seen that the crystalline structure is

[0198] For example, in the case of CAC-OS made of In-Ga-Zn oxide, energy dispersive X-ray Spectroscopy (EDX: Energy Dispersive X-ray spectroscopy) The EDX mapping obtained using a GaO X3 The region where is the main component and , In X2 Zinc Y2 O Z2 , or InO X1 The areas where the main component is It can be confirmed that the compound has the structure shown in FIG.

[0199] CAC-OS has a structure different from that of IGZO compounds in which metal elements are uniformly distributed. It has different properties from ZO compounds. That is, CAC-OS is GaO X3 The main ingredients are In a certain area, X2 Zinc Y2 OZ2 , or InO X1 The region where is the main component and The phase is separated into two layers, and the regions each containing one element as a main component are arranged in a mosaic pattern.

[0200] Here, In X2 Zinc Y2 O Z2 , or InO X1 The area where GaO is the main component X3 This region has a higher electrical conductivity than the region where In is the main component. X2 Zinc Y 2 O Z2 , or InO X1 The carriers flow through the area where the main component is oxidized. Therefore, the In X2 Zinc Y2 O Z2 , or In O X1 The region in which the main component is distributed in a cloud-like shape in the oxide semiconductor is a region in which a high electric field Effective mobility (μ) can be achieved.

[0201] On the other hand, GaO X3 The region where the main components are In X2 Zinc Y2 O Z2 , or InO X 1 This region has higher insulating properties than the region where GaO is the main component. X3 etc. The distribution of the main component in the oxide semiconductor suppresses leakage current and provides good switching performance. Switching operation can be achieved.

[0202] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation caused by And, In X2 Zinc Y2 OZ2 , or InO X1 The conductivity caused by the This makes it possible to realize a high on-current and a high field effect mobility (μ). .

[0203] In addition, semiconductor devices using CAC-OS have high reliability. This is ideal for various semiconductor devices including displays.

[0204] This embodiment mode can be combined with other embodiment modes as appropriate.

[0205] (Embodiment 4) Examples of electronic devices that can use the display device according to one embodiment of the present invention include display devices, personal computers, and the like. a personal computer, an image storage device or image reproducing device equipped with a recording medium, a mobile phone, Game consoles, including those of the 1990s, portable data terminals, e-book terminals, video cameras, digital still cameras Cameras such as cameras, goggle-type displays (head-mounted displays), navigation systems, audio playback devices (car audio, digital audio players, etc.), machines, fax machines, printers, printer-combined machines, automated teller machines (ATMs), Examples of such electronic devices include vending machines. Specific examples of such electronic devices are shown in Figure 20.

[0206] FIG. 20A shows a digital camera, which includes a housing 961, a shutter button 962, and a microphone 9 63, speaker 967, display unit 965, operation keys 966, zoom lever 968, lens 9 69, etc. For the display portion 965, the display device of one embodiment of the present invention can be used.

[0207] FIG. 20B shows a wristwatch-type information terminal, which includes a housing 931, a display unit 932, and a wristband 9 The display unit 932 has a time signal, ... The display device according to one embodiment of the present invention is used for the display portion 932. It is possible.

[0208] FIG. 20C shows an example of a mobile phone. The mobile phone has a housing 951, a display unit 952, and an operation button 953. , an external connection port 954, a speaker 955, a microphone 956, a camera 957, etc. The mobile phone has a touch sensor on the display unit 952. All operations, such as inputting, can be performed by touching the display unit 952 with a finger or a stylus. The display device of one embodiment of the present invention can be used for the display portion 952.

[0209] FIG. 20D shows a portable data terminal, which includes a housing 911, a display portion 912, a camera 919, etc. The display portion 912 has a touch panel function through which data can be input and output. The display device of one embodiment of the present invention can be used for the display portion 912.

[0210] FIG. 20E shows a television set, which includes a housing 971, a display unit 973, operation keys 974, and a speaker 9 The display unit 973 has a touch sensor 975, a communication connection terminal 976, an optical sensor 977, etc. The display unit 973 is provided with a display unit for displaying one embodiment of the present invention. The device can be used.

[0211] FIG. 20F shows an information processing terminal, which includes a housing 901, a display unit 902, a display unit 903, and a sensor. The display unit 902 and the display unit 903 are each made of a single display panel, and are flexible. The housing 901 is also flexible and can be folded as shown in the figure. It can also be used in a flat shape like a tablet. 4 can sense the shape of the housing 901, for example, when the housing 901 is bent. The display on the display unit 902 and the display unit 903 can be switched. The display device of one embodiment of the present invention can be used for the display portion 903.

[0212] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0213] 10a pixels 10b pixels 10c pixels 10d pixels 21 Transistor 22 Transistor 23 Transistor 24 Transistor 25 Semiconductor layer 25a area 25b area 25c area 26 Capacitive element 27 Capacitive element 31 Wiring 32 Wiring 33 Conductive layer 34 Conductive layer 34b Conductive layer 35 Conductive Layer 36 Conductive Layer 37 Conductive Layer 38 Conductive Layer 41a Conductive layer 41b Conductive layer 42 Conductive layer 42b opening 43 Conductive Layer 44 Conductive Layer 45 Connectors 51 Insulating layer 52 Insulating layer 53 Insulating layer 54 Insulating layer 55 Insulating layer 56 Insulating Layer 57 Protective film 61 Orientation film 62 Orientation Film 63 Liquid crystal layer 64 Conductive Layer 65 Colored layer 66 Light blocking layer 67 Polarizing Plate 68 Connection 71 Substrate 72 Substrate 73 Adhesive layer 75 Liquid crystal element 100A display device 127 Electrode 128 electrode 130 Polarizing Plate 137 Wiring 138 Wiring 139 Wiring 162 Display section 163 Substrate 164 Drive circuit section 165 Wiring 167 Input Devices 172 FPC 172b FPC 173 IC 173b IC 350A Touch Panel 506 Pixel Circuit 901 Case 902 Display section 903 Display section 904 Sensors 911 Case 912 Display section 919 Camera 931 Case 932 Display section 933 Wristband 935 Button 936 Crown 939 Camera 951 Case 952 Display section 953 Operation button 954 External connection port 955 Speaker 956 Mike 957 Camera 961 Case 962 Shutter button 963 Mike 965 Display section 966 Operation Key 967 Speaker 968 Zoom Lever 969 Lens 971 Case 973 Display section 974 Operation Key 975 Speaker 976 Communication connection terminal 977 Optical Sensor

Claims

1. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film that is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, functions as the other of the source and the drain of the first transistor and functions as one electrode of the capacitor; and a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitance element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light blocking property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersects with the first conductive film; Display device.

2. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film that is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, functions as the other of the source and the drain of the first transistor and functions as one electrode of the capacitor; and a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitance element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light blocking property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersects with the first conductive film, the fifth conductive film has a region that does not overlap with the third conductive film; Display device.

3. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film that is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, functions as the other of the source and the drain of the first transistor and functions as one electrode of the capacitor; and a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitance element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light blocking property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersects with the first conductive film, the seventh conductive film has a third opening in a region overlapping with the fourth conductive film; the third opening does not overlap with a channel formation region of the first transistor; Display device.

4. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film that is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, functions as the other of the source and the drain of the first transistor and functions as one electrode of the capacitor; and a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitance element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light blocking property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersects with the first conductive film, the second conductive film does not overlap with the oxide semiconductor film; Display device.

5. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film that is electrically connected to the oxide semiconductor film through a second opening in the first insulating film, functions as the other of the source and the drain of the first transistor and functions as one electrode of the capacitor; and a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitance element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light blocking property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersects with the first conductive film, the fourth conductive film does not overlap with the fifth conductive film; Display device.

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