High frequency module and communication device

Abstract

To reduce deterioration of characteristics at the time of temperature fluctuations.SOLUTION: A high frequency module 1 includes a power amplifier 2, an external connection terminal 31, and a switch 4. The external connection terminal 31 is connected to a tracker module 9 and the power amplifier 2. The tracker module 9 outputs a power supply voltage to the power amplifier 2. The switch 4 selectively switches a path connecting the external connection terminal 31 and the power amplifier 2 from among a plurality of paths P1 to P3 having mutually different delay times.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a power amplifier and a communication device including the high-frequency module.

Background Art

[0002] Patent Document 1 describes that a delay element is provided between a tracker (tracker module) and a power amplifier in order to match the timing of a power supply voltage and a high-frequency signal output from the tracker to the power amplifier.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the conventional high-frequency module described in Patent Document 1, the delay of the power supply voltage output from the tracker module to the power amplifier is always the same amount at any temperature. Therefore, depending on temperature fluctuations, the delay of the power supply voltage may become an inappropriate amount, resulting in deterioration of EVM characteristics and the like.

[0005] In view of the above points, the present invention is made, and an object thereof is to provide a high-frequency module and a communication device capable of reducing characteristic deterioration during temperature fluctuations.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present invention includes a power amplifier, an external connection terminal, and a switch. The external connection terminal is connected to a tracker module and the power amplifier. The tracker module outputs a power supply voltage to the power amplifier. The switch selectively switches a path connecting the external connection terminal and the power amplifier from a plurality of paths having different delay times from each other.

[0007] A high-frequency module according to one aspect of the present invention includes a power amplifier, an external connection terminal, and a thermistor. The external connection terminal is connected to a tracker module and the power amplifier. The tracker module outputs a power supply voltage to the power amplifier. The thermistor is connected to a path connecting the external connection terminal and the power amplifier.

[0008] A communication device according to one aspect of the present invention includes the high-frequency module, the tracker module, and a signal processing circuit. The signal processing circuit is connected to the high-frequency module.

Advantages of the Invention

[0009] According to the high-frequency module and the communication device according to the above aspect of the present invention, it is possible to reduce characteristic deterioration during temperature fluctuations.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

BEST MODE FOR CARRYING OUT THE INVENTION

[0011] Hereinafter, the high-frequency module 1 and the communication device 8 according to Embodiments 1 to 4 will be described with reference to the drawings.

[0012] (Embodiment 1) (1) High-frequency module The configuration of the high-frequency module 1 according to Embodiment 1 will be described with reference to the drawings.

[0013] As shown in FIG. 1, the high-frequency module 1 according to Embodiment 1 includes a power amplifier 2, an external connection terminal 31, and a switch 4. The external connection terminal 31 is connected to a tracker module 9 that outputs a power supply voltage to the power amplifier 2 and the power amplifier 2. The switch 4 selectively switches the path connecting the external connection terminal 31 and the power amplifier 2 from a plurality of paths P1 to P3 having different delay times.

[0014] According to the high-frequency module 1 according to Embodiment 1, since a delay time suitable for the temperature can be selected, characteristic degradation during temperature variation can be reduced.

[0015] (2) Each component of the high-frequency module Hereinafter, each component of the high-frequency module according to Embodiment 1 will be described with reference to the drawings.

[0016] As shown in FIG. 1, the high-frequency module 1 according to Embodiment 1 includes a power amplifier 2, a plurality (four in the illustrated example) of external connection terminals 3, a switch 4, a plurality (two in the illustrated example) of delay circuits 5, a duplexer 6, a low-noise amplifier 7, and a control circuit 11.

[0017] (2.1) Power Amplifier As shown in FIG. 1, the power amplifier 2 amplifies and outputs a transmission signal from the signal processing circuit 82. The power amplifier 2 is provided in a transmission path connected to the external connection terminal 32. The power amplifier 2 amplifies and outputs a transmission signal from the signal processing circuit 82. More specifically, when the power supply voltage from the tracker module 9 is applied, the power amplifier 2 is configured to amplify a transmission signal (high-frequency signal) input from the signal processing circuit 82 via the external connection terminal 32.

[0018] The power amplifier 2 has an input terminal and an output terminal. The input terminal of the power amplifier 2 is connected to the external connection terminal 32. Therefore, the input terminal of the power amplifier 2 is connected to the signal processing circuit 82 via the external connection terminal 32. The output terminal of the power amplifier 2 is connected to the duplexer 6.

[0019] (2.2) External Connection Terminal As shown in Fig. 1, the plurality of external connection terminals 3 include an external connection terminal 31, an external connection terminal 32, an external connection terminal 33, and an external connection terminal 34. The external connection terminal 31 is connected to the tracker module 9 and the power amplifier 2. The external connection terminal 31 is a terminal for outputting a power supply voltage from the tracker module 9 to the power amplifier 2. The external connection terminal 32 is a signal input terminal for inputting a transmission signal (high-frequency signal) from the signal processing circuit 82 to the high-frequency module 1. The external connection terminal 33 is a signal output terminal for outputting a received signal (high-frequency signal) from the high-frequency module 1 to the signal processing circuit 82. The external connection terminal 34 is an antenna terminal to which the antenna 81 is connected.

[0020] (2.3) Switch As shown in Fig. 1, the switch 4 is a switch connected to the path between the external connection terminal 31 and the power amplifier 2. The switch 4 has a common terminal 41 and a plurality (three in the illustrated example) of selection terminals 42 to 44. The common terminal 41 is connected to the external connection terminal 31. That is, the common terminal 41 is connected to the tracker module 9 via the external connection terminal 31. The selection terminal 42 is connected to the delay circuit 5a. That is, the selection terminal 42 is connected to the power amplifier 2 via the delay circuit 5a. The selection terminal 43 is connected to the delay circuit 5b. That is, the selection terminal 43 is connected to the power amplifier 2 via the delay circuit 5b. The selection terminal 44 is connected to the power amplifier 2.

[0021] The switch 4 is a switch capable of connecting at least one or more of the plurality of selection terminals 42 to 44 to the common terminal 41. The switch 4 is, for example, a switch capable of one-to-one and one-to-many connections.

[0022] The switch 4 is controlled by a controller (not shown). The switch 4 switches the connection state between the common terminal 41 and the plurality of selection terminals 42 to 44 according to a control signal from the controller. The switch 4 is, for example, a switch IC (Integrated Circuit).

[0023] (2.4) Delay circuit As shown in FIG. 1, the plurality of delay circuits 5 include a delay circuit 5a and a delay circuit 5b.

[0024] The delay circuit 5a is provided on the path P1 between the external connection terminal 31 and the power amplifier 2. More specifically, the delay circuit 5a is provided on the path between the selection terminal 42 of the switch 4 and the power amplifier 2 among the paths P1.

[0025] When the common terminal 41 is connected to the selection terminal 42 in the switch 4, the delay circuit 5a serves as a supply path for the power supply voltage and delays the power supply voltage. On the other hand, when the common terminal 41 of the switch 4 is not connected to the selection terminal 42, the delay circuit 5a does not serve as a supply path for the power supply voltage.

[0026] The delay circuit 5b is provided on the path P2 between the external connection terminal 31 and the power amplifier 2. More specifically, the delay circuit 5b is provided on the path between the selection terminal 43 of the switch 4 and the power amplifier 2 among the paths P2.

[0027] When the common terminal 41 is connected to the selection terminal 43 in the switch 4, the delay circuit 5b serves as a supply path for the power supply voltage and delays the power supply voltage. On the other hand, when the common terminal 41 of the switch 4 is not connected to the selection terminal 43, the delay circuit 5b does not serve as a supply path for the power supply voltage.

[0028] (2.5) Path switching As shown in FIG. 1, among the plurality of paths P1 to P3, the delay circuit 5a is provided in the path P1, and the delay circuit 5b is provided in the path P2. That is, no delay circuit is provided in the path P3. The plurality of paths P1 to P3 have different delay times from each other.

[0029] The switch 4 selectively switches the path connecting the external connection terminal 31 and the power amplifier 2 from the plurality of paths P1 to P3. Thereby, a delay time suitable for the temperature can be selected, and thus characteristic deterioration during temperature fluctuation can be reduced.

[0030] Switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 based on the temperature. More specifically, switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 based on the temperature measured by the temperature sensor 85 described later and the correspondence relationship between the temperature and the path. The correspondence relationship between the temperature and the path is stored, for example, in a storage unit (not shown) of the high-frequency module 1. Switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 from among a plurality of paths P1 to P3 based on the information regarding the path corresponding to the temperature measured by the temperature sensor 85.

[0031] In Embodiment 1, path P3 among the plurality of paths P1 to P3 is composed of only wiring conductors. Thereby, since the number of elements for generating a delay time can be reduced, a path having a delay time can be easily formed. When path P3 is composed of only wiring conductors, for example, the delay time can be set by adjusting at least one of the length and width of the wiring conductor constituting path P3.

[0032] (2.6) Circuit configuration of the delay circuit As shown in FIG. 2, the delay circuit 5 includes an RC circuit having a resistor 51 and a capacitor 52 as main components. The delay circuit 5 has a resistor 51 and a capacitor 52.

[0033] The resistor 51 is provided on the path between the external connection terminal 31 and the power amplifier 2. For example, the resistor 51 of the delay circuit 5a is provided on the path P1 between the external connection terminal 31 and the power amplifier 2. The resistor 51 of the delay circuit 5b is provided on the path P2 between the external connection terminal 31 and the power amplifier 2. More specifically, the resistor 51 is provided on the path between the switch 4 and the power amplifier 2. For example, the resistor 51 of the delay circuit 5a is provided on the path between the selection terminal 42 of the switch 4 and the power amplifier 2 among the path P1. The resistor 51 of the delay circuit 5c is provided on the path between the selection terminal 44 of the switch 4 and the power amplifier 2 among the path P3.

[0034] The capacitor 52 is provided on the path between the external connection terminal 31 and the power amplifier 2 and on the path between the ground. For example, the capacitor 52 of the delay circuit 5a is provided on the path between the path P1 between the external connection terminal 31 and the power amplifier 2 and the ground. The capacitor 52 of the delay circuit 5b is provided on the path between the path P2 between the external connection terminal 31 and the power amplifier 2 and the ground. More specifically, the capacitor 52 is provided on the path between the node N1 on the path between the resistor 51 and the power amplifier 2 and the ground. For example, the capacitor 52 of the delay circuit 5a is provided on the path between the node N1 on the path between the selection terminal 42 of the switch 4 and the power amplifier 2 in the path P1 and the ground. The capacitor 52 of the delay circuit 5b is provided on the path between the node N1 on the path between the selection terminal 43 of the switch 4 and the power amplifier 2 in the path P2 and the ground.

[0035] The delay circuit 5 adjusts the delay time of the output with respect to the input according to the time constant of the resistor 51 and the capacitor 52. More specifically, the delay circuit 5 adjusts the delay time of the power supply voltage according to the resistance value of the resistor 51 and the capacitance of the capacitor 52. The larger the resistance value of the resistor 51 and the capacitance of the capacitor 52, the longer the delay time of the power supply voltage.

[0036] (2.7) Duplexer As shown in FIG. 1, the duplexer 6 includes a transmission filter 61 and a reception filter 62. The transmission filter 61 is, for example, a filter having a pass band including the communication band of the transmission signal. The transmission filter 61 is, for example, a band-pass filter. The reception filter 62 is, for example, a filter having a pass band including the communication band of the reception signal. The reception filter 62 is, for example, a band-pass filter.

[0037] (2.8) Low-noise amplifier As shown in FIG. 1, the low-noise amplifier 7 is configured to amplify the reception signal (high-frequency signal) from the antenna 81.

[0038] The low-noise amplifier 7 has an input terminal and an output terminal. The low-noise amplifier 7 is provided in a reception path connected to the external connection terminal 33. The low-noise amplifier 7 amplifies the reception signal input to the input terminal and outputs it from the output terminal. The input terminal of the low-noise amplifier 7 is connected to the duplexer 6. The output terminal of the low-noise amplifier 7 is connected to the external connection terminal 33. Therefore, the output terminal of the low-noise amplifier 7 is connected to the signal processing circuit 82 via the external connection terminal 33.

[0039] (3) Communication device As shown in FIG. 1, the communication device 8 includes a high-frequency module 1, a tracker module 9, an antenna 81, a signal processing circuit 82, and a temperature sensor 85. The communication device 8 is, for example, a mobile terminal (e.g., a smartphone). Note that the communication device 8 is not limited to a mobile terminal and may be, for example, a wearable terminal (e.g., a smartwatch).

[0040] The high-frequency module 1 is configured to amplify a transmission signal (high-frequency signal) from the signal processing circuit 82 and output it to the antenna 81. Further, the high-frequency module 1 is configured to amplify a reception signal (high-frequency signal) received by the antenna 81 and output it to the signal processing circuit 82. The high-frequency module 1 is controlled by, for example, the signal processing circuit 82.

[0041] The high-frequency module 1 is, for example, a module compatible with 4G (Fourth Generation Mobile Communication) standards and 5G (Fifth Generation Mobile Communication) standards. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is a module compatible with carrier aggregation and dual connectivity.

[0042] (3.1) Antenna The antenna 81 is connected to the external connection terminal 34 of the high-frequency module 1. The antenna 81 has a transmission function of radiating the transmission signal output from the high-frequency module 1 as radio waves and a reception function of receiving the reception signal from the outside as radio waves and outputting it to the high-frequency module 1.

[0043] (3.2) Signal processing circuit The signal processing circuit 82 is connected to the high-frequency module 1. The signal processing circuit 82 processes the high-frequency signal passing through the high-frequency module 1. More specifically, the signal processing circuit 82 is configured to process the transmission signal output to the high-frequency module 1. Also, the signal processing circuit 82 is configured to process the reception signal received from the high-frequency module 1.

[0044] The signal processing circuit 82 includes a baseband signal processing circuit 83 and an RF signal processing circuit 84.

[0045] The baseband signal processing circuit 83 is, for example, a BBIC (Baseband Integrated Circuit).

[0046] The baseband signal processing circuit 83 performs predetermined signal processing on the signals from the outside of the signal processing circuit 82. More specifically, the baseband signal processing circuit 83 generates a transmission signal from the baseband signals (for example, voice signals and image signals) from the outside of the signal processing circuit 82 and outputs the generated transmission signal to the RF signal processing circuit 84.

[0047] The baseband signal processing circuit 83 performs predetermined signal processing on the signals from the RF signal processing circuit 84. More specifically, the baseband signal processing circuit 83 outputs the reception signal received from the RF signal processing circuit 84 to the outside. The reception signal processed by the baseband signal processing circuit 83 is used, for example, as an image signal for image display or as a voice signal for a call.

[0048] The RF signal processing circuit 84 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals (transmission signals and reception signals).

[0049] The RF signal processing circuit 84 performs signal processing on the transmission signal output from the baseband signal processing circuit 83, and outputs the transmission signal on which the signal processing has been performed to the high-frequency module 1. Specifically, the RF signal processing circuit 84 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 83, and outputs the transmission signal on which the signal processing has been performed to the transmission path of the high-frequency module 1.

[0050] The RF signal processing circuit 84 performs signal processing on the reception signal output from the high-frequency module 1, and outputs the reception signal on which the signal processing has been performed to the baseband signal processing circuit 83. Specifically, the RF signal processing circuit 84 performs signal processing such as down-conversion on the reception signal output from the reception path of the high-frequency module 1, and outputs the reception signal on which the signal processing has been performed to the baseband signal processing circuit 83.

[0051] (3.3) Temperature sensor As shown in FIG. 1, the temperature sensor 85 is installed inside the housing (not shown) of the communication device 8. The temperature sensor 85 is arranged, for example, on a motherboard (not shown) on which the high-frequency module 1 is arranged. The temperature sensor 85 is installed, for example, near at least one of the high-frequency module 1 and the tracker module 9.

[0052] The temperature sensor 85 measures the ambient temperature of the installation location of the temperature sensor 85. More specifically, the temperature sensor 85 measures the ambient temperature of the high-frequency module 1 and the tracker module 9.

[0053] (3.4) Tracker module As shown in FIG. 1, the tracker module 9 is configured to output a power supply voltage to the power amplifier 2. The tracker module 9 is used, for example, in the communication device 8. More specifically, the tracker module 9 is used in the communication device 8 together with the power amplifier 2 included in the high-frequency module 1. The tracker module 9 is connected to a battery (not shown) such as a terminal on which the high-frequency module 1 is mounted, and a battery voltage is supplied from the battery to the tracker module 9.

[0054] When the power amplifier 2 amplifies a transmission signal using the power supply voltage from the tracker module 9, an envelope tracking method (hereinafter referred to as "ET method") is used. The tracker module 9 outputs a power supply voltage to the power amplifier 2 by the ET method.

[0055] The ET method is a method of changing the amplitude level of the power supply voltage of the amplification element of the power amplifier according to the amplitude of the envelope of the high-frequency signal. More specifically, the ET method is a method of detecting the envelope of the amplitude of the transmission signal (high-frequency signal) input to the amplification element of the power amplifier and changing the amplitude level of the power supply voltage of the amplification element according to the envelope. By using the ET method, power loss can be reduced and high efficiency can be achieved as compared with the case where the amplitude level of the power supply voltage is constant.

[0056] The ET method includes an analog envelope tracking method (hereinafter referred to as "analog ET method") and a digital envelope tracking method (hereinafter referred to as "digital ET method").

[0057] The analog ET method is a method of continuously detecting the envelope of the amplitude of the transmission signal (high-frequency signal) input to the amplification element of the power amplifier and changing the amplitude level of the power supply voltage of the amplification element according to the continuously detected envelope. In the analog ET method, since the envelope is continuously detected, the amplitude level of the power supply voltage changes continuously.

[0058] When the analog ET method is used in Embodiment 1, the tracker module 9 continuously detects the envelope of the amplitude of the first transmission signal input to the power amplifier 2 for a plurality of power amplifiers 2, and outputs a power supply voltage whose amplitude level continuously changes according to the continuously detected envelope to the power amplifier 2.

[0059] The digital ET method is a method of discretely detecting the envelope of the amplitude of a transmission signal (high-frequency signal) input to an amplification element of a power amplifier, and changing the amplitude level of the power supply voltage of the amplification element according to the discretely detected envelope. In the digital ET method, the amplitude level of the transmission signal is not continuous but is detected at regular intervals, and the detected amplitude level is quantized. In the digital ET method, since the envelope is detected discretely, the amplitude level of the power supply voltage changes discretely.

[0060] When the digital ET method is used in Embodiment 1, the tracker module 9 discretely detects the envelope of the amplitude of the transmission signal input to the power amplifier 2 for the power amplifier 2, and outputs a power supply voltage whose amplitude level changes discretely according to the discretely detected envelope to the power amplifier 2.

[0061] The tracker module 9 generates a power supply voltage. The tracker module 9 is configured to output the power supply voltage to the power amplifier 2. More specifically, the tracker module 9 generates a power supply voltage with an amplitude level corresponding to the envelope of the amplitude of the transmission signal, and outputs the generated power supply voltage to the power amplifier 2.

[0062] The tracker module 9 is connected to the signal processing circuit 82 and receives a power control signal from the signal processing circuit 82. The tracker module 9 generates a power supply voltage based on the input power control signal. At this time, the tracker module 9 changes the amplitude of the power supply voltage based on the power control signal from the signal processing circuit 82. In other words, the tracker module 9 performs envelope tracking to generate a power supply voltage that varies according to the envelope of the amplitude of the high-frequency signal output from the signal processing circuit 82.

[0063] (4) Operation of the high-frequency module Next, the operation of the high-frequency module 1 according to Embodiment 1 will be described with reference to FIGS. 3 and 4.

[0064] In the high-frequency module 1 according to Embodiment 1, based on the temperature around the high-frequency module 1, a path between the tracker module 9 and the power amplifier 2 is selected from a plurality of paths P1 to P3. Thereby, since the waveform A1 of the power supply voltage can be delayed, as shown in FIG. 3, the waveform A1 of the power supply voltage can be synchronized with the waveform B1 of the signal passing through the power amplifier 2.

[0065] On the other hand, in the high-frequency module of Comparative Example 1, since there is one path between the tracker module 9 and the power amplifier 2, as shown in FIG. 4, the waveform A2 of the power supply voltage is not synchronized with the waveform B1 of the signal amplified by the power amplifier 2. As a result, insufficient periods T11 to T17 of the power supply voltage occur, and distortion occurs in the signal amplified and output by the power amplifier 2.

[0066] From the above, in the high-frequency module 1 according to Embodiment 1, the delay of the power supply voltage can be adjusted in response to a change in the ambient temperature of the high-frequency module 1.

[0067] (5) Effects In the high-frequency module 1 according to Embodiment 1, the external connection terminal 31 and the power amplifier 2 are selectively connected by any one of a plurality of paths P1 to P3 having different delay times from each other. Thereby, since a delay time suitable for the temperature can be selected, deterioration of characteristics during temperature variation can be reduced.

[0068] In the high-frequency module 1 according to Embodiment 1, the switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 based on the temperature. Thereby, a path with a more suitable delay time can be selected under the temperature.

[0069] In the high-frequency module 1 according to Embodiment 1, at least one of the plurality of paths P1 to P3 is composed of only a wiring conductor. Thereby, since the number of elements for generating a delay time can be reduced, a path having a delay time can be easily formed.

[0070] In the high-frequency module 1 according to Embodiment 1, a delay circuit 5 including an RC circuit having a resistor 51 and a capacitor 52 is provided in at least one of the plurality of paths P1 to P3. Thereby, the delay time can be easily adjusted.

[0071] In the communication device 8 according to Embodiment 1, in the high-frequency module 1, since a delay time suitable for the temperature can be selected, deterioration of characteristics during temperature variation can be reduced.

[0072] (6) Modification Hereinafter, a modification of Embodiment 1 will be described.

[0073] In the high-frequency module 1 according to the modification of Embodiment 1, a power supply voltage is output to the power amplifier 2 by the digital ET method.

[0074] In the high-frequency module 1 according to the modification of Embodiment 1, based on the temperature around the high-frequency module 1, a path between the tracker module 9 and the power amplifier 2 is selected from a plurality of paths P1 to P3. As a result, the waveform C1 of the power supply voltage can be delayed, so that, as shown in FIG. 5, the waveform C1 of the power supply voltage can be synchronized with the waveform B1 of the signal passing through the power amplifier 2.

[0075] On the other hand, in the high-frequency module of Comparative Example 2, since there is one path between the tracker module 9 and the power amplifier 2, as shown in FIG. 6, the waveform C2 of the power supply voltage is not synchronized with the waveform B1 of the signal amplified by the power amplifier 2. As a result, insufficient power supply voltage periods T21 to T23 occur, and distortion occurs in the signal amplified and output by the power amplifier 2.

[0076] From the above, in the high-frequency module 1 according to the modification of Embodiment 1, the delay of the power supply voltage can be adjusted in response to the change in the ambient temperature of the high-frequency module 1.

[0077] The high-frequency module 1 according to the above modification also has the same effects as the high-frequency module 1 according to Embodiment 1.

[0078] (Embodiment 2) The high-frequency module 1 according to Embodiment 2 is different from the high-frequency module (see FIG. 1) according to Embodiment 1 in that it includes a temperature sensor 12 as shown in FIG. 7. For the high-frequency module 1 according to Embodiment 2, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and the description thereof is omitted.

[0079] (1) Configuration The high-frequency module 1 according to Embodiment 2 includes, as shown in FIG. 7, a power amplifier 2, a plurality (four in the illustrated example) of external connection terminals 3, a switch 4, a plurality (two in the illustrated example) of delay circuits 5, a duplexer 6, a low-noise amplifier 7, a control circuit 11, and a temperature sensor 12.

[0080] (1.1) Temperature Sensor The temperature sensor 12 measures the ambient temperature of the high-frequency module 1 and the tracker module 9. The temperature sensor 12 is disposed, for example, on a mounting substrate (not shown) where the power amplifier 2 is disposed.

[0081] (1.2) Switch The switch 4 of Embodiment 2 switches the path connecting the external connection terminal 31 and the power amplifier 2 based on the temperature measured by the temperature sensor 12. More specifically, the switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 based on the temperature measured by the temperature sensor 12 and the correspondence between the temperature and the path. The correspondence between the temperature and the path is stored, for example, in a storage unit (not shown) of the high-frequency module 1. The switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 from a plurality of paths P1 to P3 based on the information regarding the path corresponding to the temperature measured by the temperature sensor 12. Note that, regarding the switch 4 of Embodiment 2, descriptions of the same configurations and functions as those of the switch in Embodiment 1 (see FIG. 1) are omitted.

[0082] (2) Effect In the high-frequency module 1 according to Embodiment 2, the temperature sensor 12 is provided. Thereby, it is possible to select a path with a more suitable delay time under the temperature measured by the temperature sensor 12.

[0083] (3) Modification In the high-frequency module 1 according to Embodiment 2, the output of the power supply voltage from the tracker module 9 to the power amplifier 2 may be in the analog ET method or the digital ET method.

[0084] Even in the high-frequency module 1 according to the above modification, the same effects as those of the high-frequency module 1 according to Embodiment 2 are achieved.

[0085] (Embodiment 3) The high-frequency module according to Embodiment 3 is different from the high-frequency module 1 (see FIG. 1) according to Embodiment 1 in that a delay circuit 5 including an RC circuit is provided in all of a plurality of paths P1 to P3 as shown in FIG. 8. Regarding the high-frequency module 1 according to Embodiment 3, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and the description thereof is omitted.

[0086] (1) Configuration As shown in FIG. 8, the high-frequency module 1 according to Embodiment 3 includes a power amplifier 2, a plurality (four in the illustrated example) of external connection terminals 3, a switch 4, a plurality (three in the illustrated example) of delay circuits 5, a duplexer 6, a low-noise amplifier 7, and a control circuit 11.

[0087] (1.1) Delay Circuit As shown in FIG. 8, the plurality of delay circuits 5 are provided in all of a plurality of paths P1 to P3. The plurality of delay circuits 5 include a delay circuit 5a, a delay circuit 5b, and a delay circuit 5c.

[0088] The delay circuit 5a is provided on the path P1 between the external connection terminal 31 and the power amplifier 2. More specifically, the delay circuit 5a is provided on the path between the selection terminal 42 of the switch 4 and the power amplifier 2 in the path P1.

[0089] When the common terminal 41 of the switch 4 is connected to the selection terminal 42, the delay circuit 5a serves as a supply path for the power supply voltage and delays the power supply voltage. On the other hand, when the common terminal 41 of the switch 4 is not connected to the selection terminal 42, the delay circuit 5a does not serve as a supply path for the power supply voltage.

[0090] The delay circuit 5b is provided on the path P2 between the external connection terminal 31 and the power amplifier 2. More specifically, the delay circuit 5b is provided on the path between the selection terminal 43 of the switch 4 and the power amplifier 2 in the path P2.

[0091] When the common terminal 41 is connected to the selection terminal 43 in the switch 4, the delay circuit 5b serves as a supply path for the power supply voltage and delays the power supply voltage. On the other hand, when the common terminal 41 of the switch 4 is not connected to the selection terminal 43, the delay circuit 5b does not serve as a supply path for the power supply voltage.

[0092] The delay circuit 5c is provided on the path P3 between the external connection terminal 31 and the power amplifier 2. More specifically, the delay circuit 5c is provided on the path between the selection terminal 44 of the switch 4 and the power amplifier 2 among the path P3.

[0093] When the common terminal 41 is connected to the selection terminal 44 in the switch 4, the delay circuit 5c serves as a supply path for the power supply voltage and delays the power supply voltage. On the other hand, when the common terminal 41 of the switch 4 is not connected to the selection terminal 44, the delay circuit 5c does not serve as a supply path for the power supply voltage.

[0094] (1.2) Circuit configuration of the delay circuit Similar to the delay circuit 5 of the first embodiment, the delay circuit 5 of the third embodiment includes an RC circuit mainly composed of a resistor 51 (see FIG. 2) and a capacitor 52 (see FIG. 2). The delay circuit 5 has the resistor 51 and the capacitor 52.

[0095] The resistor 51 is provided on the path between the external connection terminal 31 and the power amplifier 2. For example, the resistor 51 of the delay circuit 5a is provided on the path P1 between the external connection terminal 31 and the power amplifier 2. The resistor 51 of the delay circuit 5b is provided on the path P2 between the external connection terminal 31 and the power amplifier 2. The resistor 51 of the delay circuit 5c is provided on the path P3 between the external connection terminal 31 and the power amplifier 2. More specifically, the resistor 51 is provided on the path between the switch 4 and the power amplifier 2. For example, the resistor 51 of the delay circuit 5a is provided on the path between the selection terminal 42 of the switch 4 and the power amplifier 2 among the path P1. The resistor 51 of the delay circuit 5b is provided on the path between the selection terminal 43 of the switch 4 and the power amplifier 2 among the path P2. The resistor 51 of the delay circuit 5c is provided on the path between the selection terminal 44 of the switch 4 and the power amplifier 2 among the path P3.

[0096] The capacitor 52 is provided on the path between the external connection terminal 31 and the power amplifier 2 and on the path between the ground. For example, the capacitor 52 of the delay circuit 5a is provided on the path between the path P1 between the external connection terminal 31 and the power amplifier 2 and the ground. The capacitor 52 of the delay circuit 5b is provided on the path between the path P2 between the external connection terminal 31 and the power amplifier 2 and the ground. The capacitor 52 of the delay circuit 5c is provided on the path between the path P3 between the external connection terminal 31 and the power amplifier 2 and the ground. More specifically, the capacitor 52 is provided on the path between the node N1 on the path between the resistor 51 and the power amplifier 2 and the ground. For example, the capacitor 52 of the delay circuit 5a is provided on the path between the node N1 on the path between the selection terminal 42 of the switch 4 and the power amplifier 2 among the path P1 and the ground. The capacitor 52 of the delay circuit 5b is provided on the path between the node N1 on the path between the selection terminal 43 of the switch 4 and the power amplifier 2 among the path P2 and the ground. The capacitor 52 of the delay circuit 5c is provided on the path between the node N1 on the path between the selection terminal 44 of the switch 4 and the power amplifier 2 among the path P3 and the ground.

[0097] The delay circuit 5 of Embodiment 3 adjusts the delay time of the output with respect to the input according to the time constant of the resistor 51 and the capacitor 52, similar to the delay circuit 5 of Embodiment 1. More specifically, the delay circuit 5 adjusts the delay time of the power supply voltage according to the resistance value of the resistor 51 and the capacitance of the capacitor 52.

[0098] (1.3) Path switching As shown in FIG. 8, among a plurality of paths P1 to P3, a delay circuit 5a is provided in the path P1, a delay circuit 5b is provided in the path P2, and a delay circuit 5c is provided in the path P3. The plurality of paths P1 to P3 have different delay times from each other.

[0099] The switch 4 selectively switches the path connecting the external connection terminal 31 and the power amplifier 2 from among the plurality of paths P1 to P3. Thereby, a delay time suitable for the temperature can be selected, and thus characteristic degradation during temperature variation can be reduced.

[0100] The switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 based on the temperature. More specifically, the switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 based on the temperature measured by the temperature sensor 85 and the correspondence between the temperature and the path. The correspondence between the temperature and the path is stored, for example, in a storage unit (not shown) of the high-frequency module 1. The switch 4 switches the path connecting the external connection terminal 31 and the power amplifier 2 from among the plurality of paths P1 to P3 based on the information regarding the path corresponding to the temperature measured by the temperature sensor 85.

[0101] (2) Effects In the high-frequency module 1 according to Embodiment 3, delay circuits 5 each including an RC circuit having a resistor 51 and a capacitor 52 are provided in all of the plurality of paths P1 to P3. Thereby, the delay time can be easily adjusted.

[0102] (3) Modifications In the high-frequency module 1 according to Embodiment 3, the output of the power supply voltage from the tracker module 9 to the power amplifier 2 may be either an analog ET method or a digital ET method.

[0103] Also in the high-frequency module 1 according to each of the above-described modification examples, the same effects as those of the high-frequency module 1 according to Embodiment 3 are achieved.

[0104] (Embodiment 4) The high-frequency module according to Embodiment 4 is different from the high-frequency module 1 (see FIG. 1) according to Embodiment 1 in that it includes a thermistor 53, as shown in FIG. 9. Regarding the high-frequency module 1 according to Embodiment 4, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and the description thereof is omitted.

[0105] (1) Configuration The high-frequency module 1 according to Embodiment 3 includes, as shown in FIG. 9, a power amplifier 2, a plurality (four in the illustrated example) of external connection terminals 3, a delay circuit 5d, a duplexer 6, a low-noise amplifier 7, and a control circuit 11.

[0106] (1.1) Power Amplifier The power amplifier 2 amplifies and outputs the transmission signal from the signal processing circuit 82, as shown in FIG. 9, in the same manner as the power amplifier 2 (see FIG. 1) of Embodiment 1.

[0107] (1.2) External Connection Terminals The plurality of external connection terminals 3 includes, as shown in FIG. 9, an external connection terminal 31, an external connection terminal 32, an external connection terminal 33, and an external connection terminal 34.

[0108] (1.3) Delay Circuit The delay circuit 5d has, as shown in FIG. 9, a thermistor 53 and a capacitor 54. The delay circuit 5d is provided on the path between the external connection terminal 31 and the power amplifier 2.

[0109] The thermistor 53 is connected to the path connecting the external connection terminal 31 and the power amplifier 2. More specifically, the first end of the thermistor 53 is connected to the external connection terminal 31, and the second end of the thermistor 53 is connected to the power amplifier 2.

[0110] The capacitor 54 is connected to the path between the thermistor 53 and the power amplifier 2 and the path between the ground. More specifically, the first end of the capacitor 54 is connected to the path between the thermistor 53 and the power amplifier 2, and the second end of the capacitor 54 is connected to the ground.

[0111] Regarding the delay circuit 5d of the fourth embodiment, the description of the same configuration and function as the delay circuit 5 (see FIG. 1) of the first embodiment is omitted.

[0112] (1.4) Path As shown in FIG. 9, the delay circuit 5d adjusts the delay time of the power supply voltage by changing the resistance value of the thermistor 53 based on the temperature in the path connecting the external connection terminal 31 and the power amplifier 2.

[0113] (2) Effect In the high-frequency module 1 according to the fourth embodiment, the thermistor 53 is connected to the path connecting the external connection terminal 31 and the power amplifier 2. As a result, a delay time suitable for the temperature can be selected, so that the characteristic degradation during temperature variation can be reduced.

[0114] (3) Modification In the high-frequency module 1 according to the fourth embodiment, the output of the power supply voltage from the tracker module 9 to the power amplifier 2 may be in the analog ET method or in digital control.

[0115] The high-frequency module 1 according to the above modification also has the same effect as the high-frequency module 1 according to the fourth embodiment.

[0116] The embodiments and modifications described above are only a part of various embodiments and modifications of the present invention. Further, the embodiments and modifications can be variously changed according to design and the like as long as the object of the present invention can be achieved.

[0117] (Aspect) The following aspects are disclosed in this specification.

[0118] The high-frequency module (1) according to the first aspect includes a power amplifier (2), an external connection terminal (31), and a switch (4). The external connection terminal (31) is connected to the tracker module (9) and the power amplifier (2). The tracker module (9) outputs a power supply voltage to the power amplifier (2). The switch (4) selectively switches a path connecting the external connection terminal (31) and the power amplifier (2) from a plurality of paths (P1 to P3) having different delay times from each other.

[0119] According to the high-frequency module (1) according to the first aspect, since a delay time suitable for the temperature can be selected, deterioration of characteristics during temperature variation can be reduced.

[0120] In the high-frequency module (1) according to the second aspect, in the first aspect, the switch (4) switches a path connecting the external connection terminal (31) and the power amplifier (2) based on the temperature.

[0121] According to the high-frequency module (1) according to the second aspect, a path having a more suitable delay time can be selected under the temperature.

[0122] The high-frequency module (1) according to the third aspect further includes a temperature sensor (12) in the second aspect. The switch (4) switches a path connecting the external connection terminal (31) and the power amplifier (2) based on the temperature measured by the temperature sensor (12).

[0123] According to the high-frequency module (1) according to the third aspect, a path having a more suitable delay time can be selected under the temperature measured by the temperature sensor (12).

[0124] In the high-frequency module (1) according to the fourth aspect, in any one of the first to third aspects, at least one of the plurality of paths (P1 to P3) is composed of only a wiring conductor.

[0125] According to the high-frequency module (1) according to the fourth aspect, since the number of elements for generating a delay time can be reduced, a path having a delay time can be easily formed.

[0126] The high-frequency module (1) according to the fifth aspect further includes a delay circuit (5) in any one of the first to third aspects. The delay circuit (5) is provided in at least one of the plurality of paths (P1 to P3). The delay circuit (5) includes an RC circuit. The RC circuit has a resistor (51) and a capacitor (52).

[0127] According to the high-frequency module (1) according to the fifth aspect, the delay time can be easily adjusted.

[0128] The high-frequency module (1) according to the sixth aspect further includes a plurality of delay circuits (5) in any one of the first to third aspects. The plurality of delay circuits (5) are provided in all of the plurality of paths (P1 to P3). Each of the plurality of delay circuits (5) includes an RC circuit. The RC circuit has a resistor (51) and a capacitor (52).

[0129] According to the high-frequency module (1) according to the sixth aspect, the delay time can be easily adjusted.

[0130] The high-frequency module (1) according to the seventh aspect includes a power amplifier (2), an external connection terminal (31), and a thermistor (53). The external connection terminal (31) is connected to the tracker module (9) and the power amplifier (2). The tracker module (9) outputs a power supply voltage to the power amplifier (2). The thermistor (53) is connected to a path connecting the external connection terminal (31) and the power amplifier (2).

[0131] According to the high-frequency module (1) according to the seventh aspect, since a delay time suitable for the temperature can be selected, deterioration of characteristics during temperature variation can be reduced.

[0132] The communication device (8) according to the eighth aspect includes any one of the high-frequency modules (1) according to the first to seventh aspects, a tracker module (9), and a signal processing circuit (82). The signal processing circuit (82) is connected to the high-frequency module (1).

[0133] According to the communication device (8) according to the eighth aspect, in the high-frequency module (1), since a delay time suitable for the temperature can be selected, deterioration of characteristics during temperature variation can be reduced.

Explanation of Reference Numerals

[0134] 1 High-frequency module 11 Control circuit 12 Temperature sensor 2 Power amplifier 3, 31, 32, 33, 34 External connection terminal 4 Switch 41 Common terminal 42, 43, 44 Selection terminal 5, 5a, 5b, 5c, 5d Delay circuit 51 Resistor 52 Capacitor 53 Thermistor 54 Capacitor 6 Duplexer 61 Transmission filter 62 Reception filter 7 Low-noise amplifier 8 Communication device 81 Antenna 82 Signal processing circuit 83 Baseband signal processing circuit 84 RF signal processing circuit 85 Temperature sensor 9 Tracker module A1, A2, B1, C1, C2 Waveform N1 Node Routes P1, P2, P3 Periods T11, T12, T13, T14, T15, T16, T17 Periods T21, T22, T23

Claims

1. A power amplifier, a tracker module that outputs a power supply voltage to the power amplifier, and an external connection terminal connected to the power amplifier, and a switch that selectively switches a path between the external connection terminal and the power amplifier from a plurality of paths having different delay times, a high-frequency module.

2. The switch switches the path connecting the external connection terminal and the power amplifier based on temperature, The high-frequency module according to Claim 1.

3. Further comprising a temperature sensor, The switch switches the path connecting the external connection terminal and the power amplifier based on the temperature measured by the temperature sensor, The high-frequency module according to Claim 2.

4. At least one of the plurality of paths is composed of only a wiring conductor, The high-frequency module according to any one of Claims 1 to 3.

5. Further comprising a delay circuit provided in at least one of the plurality of paths and including an RC circuit having a resistor and a capacitor, The high-frequency module according to any one of Claims 1 to 3.

6. Provided in all of the plurality of paths, and further comprising a plurality of delay circuits each including an RC circuit having a resistor and a capacitor, The high-frequency module according to any one of Claims 1 to 3.

7. A power amplifier, a tracker module that outputs a power supply voltage to the power amplifier, and an external connection terminal connected to the power amplifier, and a thermistor connected to a path connecting the external connection terminal and the power amplifier, a high-frequency module.

8. The high-frequency module according to any one of Claims 1 to 3 and 7, the tracker module, and a signal processing circuit connected to the high-frequency module, a communication device.

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