Multilayer electronic component

Abstract

To improve the densification of a cover layer and enhance the resistance to degradation of a multilayer electronic component under a high-temperature and high-humidity condition.SOLUTION: An electronic component includes: a capacitive formation unit including a dielectric layer 111 and internal electrodes 121, 122; external electrodes 131, 132; and a body 110 having a cover part 112 arranged in the upper and lower end surfaces in a first direction. The cover part 112 includes titanium (Ti), gallium (Ga), and phosphorus (P), and the number of moles of the gallium (Ga) per 100 moles of the titanium (Ti) is in the range of 0.3 mol to 6.0 mol, both inclusive.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-type capacitor mounted on a printed circuit board of various electronic products such as video devices like liquid crystal display (LCD) and plasma display panel (PDP), computers, smartphones, and mobile phones, and serves to charge or discharge electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output power, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] As miniaturization and high capacitance progress, the need to protect the region forming the capacitance is increasing. Regarding this, it has been improved by adding a margin region surrounding the region forming the capacitance. However, by continuously changing the structural design to achieve miniaturization and high capacitance, the region forming the capacitance becomes larger, and the margin region protecting the region forming the capacitance decreases, which may cause a problem that the moisture resistance reliability and strength of the multilayer ceramic capacitor become vulnerable.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One of the several problems to be solved by the present invention is to provide a laminated electronic component with improved density of the cover portion and excellent deterioration resistance in a high-temperature and high-humidity environment.

[0007] One of the several problems to be solved by the present invention is to provide a laminated electronic component with improved moisture resistance reliability.

[0008] However, several problems to be solved by the present invention are not limited to the above-described content, and can be more easily understood in the process of describing specific embodiments of the present invention.

Means for Solving the Problems

[0009] A laminated electronic component according to an embodiment of the present invention includes a capacitance forming portion including a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, and a cover portion arranged on both end faces of the capacitance forming portion in the first direction, and a main body including the cover portion, and an external electrode arranged on the main body, wherein the cover portion contains titanium (Ti), gallium (Ga), and phosphorus (P), and the number of moles of gallium (Ga) relative to 100 moles of titanium (Ti) contained in the cover portion can be 0.3 mole or more and 6.0 moles or less.

[0010] A laminated electronic component according to another embodiment of the present invention includes a capacitance forming portion including a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, and a cover arranged on both end faces of the capacitance forming portion in the first direction, and a main body including the cover, and an external electrode arranged on the main body, wherein the cover portion contains titanium (Ti), gallium (Ga), and phosphorus (P), and the number of moles of phosphorus (P) relative to 100 moles of titanium (Ti) contained in the cover portion can be more than 0 mole and 5.0 moles or less.

Advantages of the Invention

[0011] One of the effects of the present invention is to improve the density of the cover portion and enhance the deterioration resistance of the multilayer electronic component in a high-temperature and high-humidity environment.

[0012] One of the effects of the present invention is to improve the moisture resistance reliability of the multilayer electronic component.

[0013] However, the various and beneficial advantages and effects of the present invention are not limited to the above-described content and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0014]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Mode for Carrying Out the Invention

[0015] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be deformed into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to ordinary technicians. Therefore, the shape and size of the elements in the drawings can be exaggerated for clearer explanation, and the elements indicated by the same reference numerals in the drawings are the same elements.

[0016] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the size and thickness of each configuration shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. Note that components having the same function within the scope of the same concept are described using the same reference numerals. Furthermore, throughout the specification, when a certain part says that a certain component "includes", this means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0017] In the figure, the first direction can be defined as the stacking direction or the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0018] Stacked electronic component FIG. 1 schematically shows a perspective view of a multilayer electronic component according to an embodiment of the present invention. FIG. 2 schematically shows a separated perspective view showing a laminated structure of internal electrodes. FIG. 3 schematically shows a cross-sectional view taken along line I-I' of FIG. 1. FIG. 4 schematically shows a cross-sectional view taken along line II-II' of FIG. 1.

[0019] Hereinafter, with reference to FIGS. 1 to 4, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, the present invention can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0020] A multilayer electronic component 100 according to an embodiment of the present invention includes a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged with the dielectric layer 111 in a first direction, and a main body 110 including cover portions 112 and 113 arranged on both end surfaces in the first direction of the capacitance forming portion Ac, and external electrodes 131 and 132 arranged on the main body 110. The cover portions 112 and 113 contain titanium (Ti), gallium (Ga), and phosphorus (P), and the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover portions 112 and 113 can be 0.3 mole or more and 6.0 moles or less.

[0021] A multilayer electronic component 100 according to another embodiment of the present invention includes a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged with the dielectric layer 111 in a first direction, and a main body 110 including cover portions 112 and 113 arranged on both end surfaces in the first direction of the capacitance forming portion Ac, and external electrodes 131 and 132 arranged on the main body 110. The cover portions 112 and 113 contain titanium (Ti), gallium (Ga), and phosphorus (P), and the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) contained in the cover portions 112 and 113 can be more than 0 mole and 5.0 moles or less.

[0022] Hereinafter, various embodiments of the present invention will be described more specifically.

[0023] The main body 110 may have a dielectric layer 111 and internal electrodes 121 and 122 alternately laminated.

[0024] More specifically, the main body 110 may include a capacitance forming portion Ac that is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately disposed so as to face each other with the dielectric layer 111 interposed therebetween to form a capacitance.

[0025] There is no particular limitation on the specific shape of the main body 110. As shown in the drawing, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 does not have a hexahedron shape with perfect straight lines, but can have a substantially hexahedron shape.

[0026] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0027] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated to such an extent that it is difficult to confirm without using a Scanning Electron Microscope (SEM).

[0028] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO 3 ) - based materials can be used. For example, barium titanate - based materials, lead - composite perovskite - based materials, or strontium titanate - based materials can be used. The barium titanate - based material is BaTiO 3It can contain ceramic particles. As an example of the ceramic particles, BaTiO 3 , BaTiO 3 in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved (Ba 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1), etc. may be mentioned.

[0029] Further, as the raw material for forming the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO 3 ), according to the object of the present invention.

[0030] Incidentally, since the dielectric layer 111 can be formed using a dielectric material such as barium titanate (BaTiO 3 ), it can contain a dielectric fine structure after firing. The dielectric fine structure can include a plurality of crystal grains, grain boundaries disposed between the adjacent crystal grains, and triple points disposed at points where three or more of the grain boundaries meet, and each can include a plurality.

[0031] In the present invention, in order to distinguish from the dielectric layers included in the cover portions 112 and 113 and the side margin portions 114 and 115 described later, the dielectric layer 111 included in the capacitance forming portion Ac can be defined as the first dielectric layer 111, the dielectric layer included in the cover portions 112 and 113 can be defined as the second dielectric layer, and the dielectric layer included in the side margin portions 114 and 115 can be defined as the third dielectric layer.

[0032] In the present invention, as an example of a more specific method for measuring the content of elements included in each component of the multilayer electronic component 100, in the case of a destructive method, the components can be analyzed using the energy dispersive X-ray spectrometer (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, a thin analysis sample is prepared using a focused ion beam (FIB) equipment in a region including a dielectric microstructure in a cross-section of the sintered body or the side margin portion. Then, the damaged layer on the surface is removed from the thinned sample using xenon (Xe) or argon (Ar) ion milling, and then each component to be measured is mapped in the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can also be expressed in terms of the mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. At this time, the molar number of one specific component with respect to the molar number of another specific component can be converted and expressed.

[0033] As still another method, the chip is pulverized to select a region including the dielectric microstructure, and the region including the dielectric microstructure thus selected is analyzed for its components using an apparatus such as an inductively coupled plasma optical emission spectrometer (ICP-OES) or an inductively coupled plasma mass spectrometer (ICP-MS).

[0034] In one embodiment of the present invention, the first dielectric layer 111 of the capacitance forming portion Ac may not contain gallium (Ga) or phosphorus (P).

[0035] Here, the fact that the first dielectric layer 111 of the capacitance forming portion Ac does not contain gallium (Ga) or phosphorus (P) can mean that it does not contain gallium (Ga) or phosphorus (P) in the state of dielectric slurry or dielectric green sheet before firing the first dielectric layer 111, or it can mean that the first dielectric layer 111 located in the central region of the capacitance forming portion Ac does not contain gallium (Ga) or phosphorus (P).

[0036] That is, as the firing process such as high-temperature heat treatment proceeds for the gallium (Ga) or phosphorus (P) contained in the second dielectric layers of the cover portions 112 and 113 described later, gallium (Ga) or phosphorus (P) may diffuse into the region of the first dielectric layer 111 of the capacitance forming portion Ac adjacent to the cover portions 112 and 113 in the capacitance forming portion Ac. However, it can be meant that gallium (Ga) or phosphorus (P) may not be detected in the first dielectric layer 111 located in the central region of the capacitance forming portion Ac.

[0037] For example, when observing a 10 μm × 10 μm region located at the center of the first direction and the second direction with reference to the cross-sections in the first direction and the second direction at the center of the main body 110 in the third direction in the EDS mode of a scanning electron microscope (SEM) or a transmission electron microscope (TEM), it can be meant that gallium (Ga) or phosphorus (P) is not detected in the region, or gallium (Ga) is detected at less than 0.5 at% and phosphorus (P) is detected at less than 0.1 at%.

[0038] The thickness td of the first dielectric layer 111 does not need to be particularly limited.

[0039] In order to ensure the reliability of the multilayer electronic component 100 under a high voltage environment, the thickness of the first dielectric layer 111 can be 10.0 μm or less. Further, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the first dielectric layer 111 may be 3.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the first dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0040] Here, the thickness td of the first dielectric layer 111 can mean the thickness td of the first dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0041] On the other hand, the thickness td of the first dielectric layer 111 can mean the size of the first dielectric layer 111 in the first direction. Further, the thickness td of the first dielectric layer 111 can mean the average thickness td of the first dielectric layer 111, and can mean the average size of the first dielectric layer 111 in the first direction.

[0042] The average size of the first dielectric layer 111 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one first dielectric layer 111 in the first direction can mean the average value calculated by measuring the size in the first direction at 10 points that are equally spaced in the second direction for one first dielectric layer 111 in the scanned image. The 10 equally spaced points can be specified by the capacitance forming portion Ac. Further, when the measurement of such an average value is extended to 10 first dielectric layers 111 to measure the average value, the average size of the first dielectric layer 111 in the first direction can be further generalized.

[0043] The internal electrodes 121 and 122 may be alternately laminated with the first dielectric layer 111.

[0044] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 are alternately arranged so as to face each other with the first dielectric layer 111 constituting the main body 110 interposed therebetween, and can be exposed to the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0045] More specifically, the first internal electrode 121 can be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 can be disposed on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and a second external electrode 132 can be disposed on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0046] That is, the first internal electrode 121 can be connected to the first external electrode 131 and not connected to the second external electrode 132, and the second internal electrode 122 can be connected to the second external electrode 132 and not connected to the first external electrode 131. At this time, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the first dielectric layer 111 disposed therebetween.

[0047] On the other hand, the main body 110 can be formed by alternately laminating a ceramic green sheet printed with the first internal electrode 121 and a ceramic green sheet printed with the second internal electrode 122 and then firing them.

[0048] The material for forming the internal electrodes 121 and 122 is not particularly limited, and a material having excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0049] In addition, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. As the printing method of the conductive paste for internal electrodes, a screen printing method, a gravure printing method, or the like can be used, but the present invention is not limited thereto.

[0050] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0051] In order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness te of the internal electrodes 121 and 122 can be 3.0 μm or less. Further, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0052] Here, the thickness te of the internal electrodes 121 and 122 can mean the size of the internal electrodes 121 and 122 in the first direction. Further, the thickness te of the internal electrodes 121 and 122 can mean the average thickness te of the internal electrodes 121 and 122, and can mean the average size of the internal electrodes 121 and 122 in the first direction.

[0053] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size of one internal electrode in the first direction at 10 equally spaced points in the second direction in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when the measurement of such an average value is extended to 10 internal electrodes to measure the average value, the average size of the internal electrodes in the first direction can be further generalized.

[0054] On the other hand, in one embodiment of the present invention, the average thickness td of at least one of the plurality of first dielectric layers 111 and the average thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0055] In other words, the average thickness td of one of the first dielectric layers 111 may be even greater than twice the average thickness te of one of the internal electrodes 121 and 122. Preferably, the average thickness td of the plurality of first dielectric layers 111 may be even greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0056] Generally, for electronic components for high-voltage electrical equipment, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) in a high-voltage environment.

[0057] Therefore, in order to prevent the decrease in the breakdown voltage in a high-voltage environment, by making the average thickness td of the first dielectric layer 111 greater than twice the average thickness te of the internal electrodes 121 and 122, the thickness of the dielectric layer, which is the distance between the internal electrodes, can be increased, and the breakdown voltage characteristics can be improved.

[0058] When the average thickness td of the first dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122, the average thickness of the dielectric layer, which is the distance between the internal electrodes, becomes thin, and the breakdown voltage may decrease, and there is a possibility that a short circuit may occur between the internal electrodes.

[0059] On the other hand, the main body 110 may include cover portions 112 and 113 disposed on both end - surfaces in the first direction of the capacitance - forming portion Ac.

[0060] Specifically, it may include a first cover portion 112 disposed on one surface of the capacitance - forming portion Ac in the first direction and a second cover portion 113 disposed on the other surface of the capacitance - forming portion Ac in the first direction. More specifically, it may include an upper cover portion 112 disposed on the upper portion of the capacitance - forming portion Ac in the first direction and a lower cover portion 113 disposed on the lower portion of the capacitance - forming portion Ac in the first direction.

[0061] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single second dielectric layer or two or more second dielectric layers in the first direction on the upper and lower surfaces of the capacitance - forming portion Ac, respectively.

[0062] As described above, in the present invention, the dielectric layers included in the cover portions 112 and 113 can be defined as the second dielectric layers.

[0063] The cover portions 112 and 113 can basically play a role of preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0064] The upper cover portion 112 and the lower cover portion 113 do not include the internal electrodes 121 and 122 and can include the same ceramic material as the first dielectric layer 111.

[0065] That is, the upper cover portion 112 and the lower cover portion 113 can include a dielectric substance. For example, they can include a barium titanate (BaTiO 3 ) - based dielectric substance. Also, the raw material for forming the second dielectric layer is barium titanate (BaTiO3 ) Various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as according to the purpose of the present invention.

[0066] And the second dielectric layer included in the cover portions 112 and 113 can be formed using a dielectric material such as barium titanate (BaTiO 3 )), so that a dielectric microstructure can be included after firing. The dielectric microstructure can include a plurality of crystal grains, grain boundaries disposed between the adjacent crystal grains, and triple points disposed at points where three or more of the grain boundaries meet, and can include a plurality of each. Further, the second dielectric layer can include a secondary-phase that is not dissolved in the crystal grains.

[0067] On the other hand, the cover portions 112 and 113 can include gallium (Ga).

[0068] More specifically, the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) included in the cover portions 112 and 113 can be 0.3 moles or more and 6.0 moles or less.

[0069] By the cover portions 112 and 113 including gallium (Ga), the firing temperature can be lowered and the number of pores can be reduced, whereby the density of the cover portions 112 and 113 can be improved and the moisture resistance reliability can be improved. Also, even when receiving an external impact, the generation of cracks can be suppressed and the mechanical properties can be improved.

[0070] By satisfying that the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) included in the cover portions 112 and 113 is 0.3 moles or more and 6.0 moles or less, the firing temperature of the cover portions 112 and 113 can be lowered and the number of pores can be reduced, whereby the density of the cover portions 112 and 113 can be improved and the moisture resistance reliability can be improved. Also, even when receiving an external impact, the generation of cracks can be suppressed and the mechanical properties can be improved.

[0071] When the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 is less than 0.3 moles, the grain boundary resistance may deteriorate due to grain growth of the crystal grains, and the reliability may decrease. Furthermore, since the removal of pores is not sufficient, the moisture resistance reliability may decrease.

[0072] When the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 exceeds 6.0 moles, the dispersibility in the state of the dielectric slurry may decrease due to excessive addition of gallium (Ga), and aggregates may be generated. As a result, the breakdown voltage (BDV) may decrease, the grain growth of the crystal grains may be excessively suppressed, and the density may decrease, which may cause a negative effect of decreasing the moisture resistance reliability.

[0073] Also, the cover parts 112 and 113 can contain phosphorus (P).

[0074] More specifically, the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 may be more than 0 moles and 5.0 moles or less, and the preferable upper limit value may be 3.0 moles or less, or 1.0 moles or less, and more preferably 0.5 moles or less.

[0075] When the cover parts 112 and 113 contain phosphorus P, the number of pores can be reduced, whereby the density of the cover parts 112 and 113 can be improved, and the moisture resistance reliability can be improved. Also, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0076] By satisfying that the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 is more than 0 moles and 5.0 moles or less, the number of pores can be reduced, whereby the density of the cover parts 112 and 113 can be improved, and the moisture resistance reliability can be improved.

[0077] When the number of moles of phosphorus (P) relative to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 is 5.0 moles or more, grain growth of the crystal grains is excessively suppressed, and there is a risk that electrical properties such as the breakdown voltage (BDV) may deteriorate.

[0078] Also, as described above, the cover parts 112 and 113 can include a plurality of crystal grains including core - shell - structured crystal grains, grain boundaries disposed between the adjacent crystal grains, triple points disposed at points where three or more of the grain boundaries meet, and a secondary - phase. At least one of the shell part, grain boundary, triple point, and secondary - phase of the core - shell crystal grains contained in the cover parts 112 and 113 can include a region where the phosphorus (P) content is less than 0.1 at%.

[0079] This can mean that phosphorus (P) is not aggregated and is uniformly dispersed.

[0080] In one embodiment of the present invention, it is preferable that the cover parts 112 and 113 contain both gallium (Ga) and phosphorus (P). At this time, the number of moles of gallium (Ga) relative to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 is 0.3 moles or more and 6.0 moles or less, and the number of moles of phosphorus (P) relative to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 is preferably more than 0 moles and 5.0 moles or less, but is not particularly limited thereto.

[0081] Also, the ratio (A / B) of the number of moles of barium (Ba) to the number of moles of titanium (Ti) (B) contained in the cover parts 112 and 113 can satisfy 0.99 ≦ A / B ≦ 1.05.

[0082] By the ratio (A / B) of the number of moles of barium (Ba) to the number of moles of titanium (Ti) (B) contained in the cover parts 112 and 113 satisfying 0.99 ≦ A / B ≦ 1.05, uniform grain growth of the crystal grains is induced, the density of the dielectric microstructure is improved, and the reliability including moisture resistance reliability can be improved.

[0083] When the ratio (A / B) of the number of moles (A) of barium (Ba) to the number of moles (B) of titanium (Ti) contained in the cover parts 112 and 113 is less than 0.99 (A / B < 0.99), non-uniform grain growth of crystal grains may occur, and there is a risk that electrical characteristics such as the breakdown voltage (BDV) may deteriorate. When the ratio (A / B) of the number of moles (A) of barium (Ba) to the number of moles (B) of titanium (Ti) contained in the cover parts 112 and 113 exceeds 1.05 (1.05 < A / B), the density of the dielectric microstructure and the grain growth of crystal grains may be inhibited, and there is a risk that electrical characteristics such as the breakdown voltage (BDV) may deteriorate.

[0084] On the other hand, since the cover parts 112 and 113 contain at least one of gallium (Ga) and phosphorus (P), the composition of the second dielectric layer contained in the cover parts 112 and 113 can be different from the composition of the first dielectric layer contained in the capacitance forming part Ac.

[0085] In other words, the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the second dielectric layer may be more than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the first dielectric layer.

[0086] Also, the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the second dielectric layer may be more than the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the first dielectric layer.

[0087] In one embodiment of the present invention, the grain boundaries of the cover parts 112 and 113 can include a region where the atomic percentage (at%) of gallium (Ga) is 2.0 at% or more, and the upper limit value is not particularly limited, but can be, for example, 4.0 at% or less.

[0088] The grain boundaries of the cover parts 112 and 113 include regions where the atomic percentage (at%) of gallium (Ga) is 2.0 at% or more, so that the firing temperature can be lowered and the number of pores can be reduced. As a result, the density of the cover parts 112 and 113 can be improved and the moisture resistance reliability can be improved. In addition, the generation of cracks can be suppressed even when the cover parts are subjected to external impact, and the mechanical properties can be improved.

[0089] In addition, the average atomic percentage (at%) of gallium (Ga) contained in the grain boundaries of the cover parts 112 and 113 can be 0.5 at% or more and 2.0 at% or less.

[0090] When the average atomic percentage (at%) of gallium (Ga) contained in the grain boundaries of the cover parts 112 and 113 satisfies 0.5 at% or more and 2.0 at% or less, the firing temperature can be lowered and the number of pores can be reduced. As a result, the density of the cover parts 112 and 113 can be improved and the moisture resistance reliability can be improved. In addition, the generation of cracks can be suppressed even when the cover parts are subjected to external impact, and the mechanical properties can be improved.

[0091] Here, the method for measuring the atomic percentage (at%) of gallium (Ga) contained in the grain boundaries of the cover parts 112 and 113 is not particularly limited, but as described above, the EDS analysis method can be used. The EDS analysis position can be determined by measuring the points of the grain boundaries or by using a line profile, which is a method of analyzing the components of a line drawn in a direction perpendicular to the substantial linear shape of the grain boundary disposed between adjacent grains, and the atomic percentage (at%) of gallium (Ga) can be confirmed from the measured line profile.

[0092] On the other hand, the thickness tc of the cover parts 112 and 113 does not need to be particularly limited.

[0093] However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component, the thickness tc of the cover portions 112 and 113 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in the case of an ultra-small product.

[0094] Here, the thickness tc of the cover portions 112 and 113 can mean the size of the cover portions 112 and 113 in the first direction. Also, the thickness tc of the cover portions 112 and 113 can mean the average thickness tc of the cover portions 112 and 113, and can mean the average size of the cover portions 112 and 113 in the first direction.

[0095] The average size of the cover portions 112 and 113 in the first direction can be measured by scanning an image of the cross-sections in the first and second directions of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image obtained by scanning one cover portion, it can mean the average value calculated by measuring the size in the first direction at 10 points equally spaced in the second direction.

[0096] Note that the average size of the cover portion in the first direction measured by the above-described method can have substantially the same size as the average size of the cover portion in the first direction in the cross-sections in the first and third directions of the main body 110.

[0097] On the other hand, the stacked electronic component 100 can include side margin portions 114 and 115 disposed on both end-surfaces of the main body 110 in the third direction.

[0098] More specifically, the side margin portions 114 and 115 can include a first side margin portion 114 disposed on the fifth surface 5 of the main body 110 and a second side margin portion 115 disposed on the sixth surface 6 of the main body 110.

[0099] As shown in the figure, the side margin portions 114 and 115 can mean the regions between the end - surfaces of the first internal electrode 121 and the second internal electrode 122 in the third direction and the boundary surface of the main body 110, based on the cross - sections of the main body 110 in the first and third directions.

[0100] More specifically, for the side margin portions 114 and 115, except for the locations where the side margin portions 114 and 115 are formed on the ceramic green sheet applied to the capacitance forming portion Ac, a conductive paste is applied to form the internal electrodes 121 and 122. In order to suppress the step formed by the internal electrodes 121 and 122, after cutting so that the internal electrodes 121 and 122 after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the main body 110, a single third dielectric layer or two or more third dielectric layers can be laminated in the third direction on the end - surfaces of the capacitance forming portion Ac in the third direction.

[0101] As described above, in the present invention, the dielectric layer included in the side margin portions 114 and 115 can be defined as the third dielectric layer.

[0102] The side margin portions 114 and 115 can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0103] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and can include the same ceramic material as the first dielectric layer 111.

[0104] That is, the first side margin portion 114 and the second side margin portion 115 can include a dielectric substance. For example, they can include a barium titanate (BaTiO 3 ) - based dielectric substance. Also, for the raw material for forming the third dielectric layer, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO 3 ) according to the purpose of the present invention.

[0105] And the third dielectric layer included in the side margin portions 114 and 115 can be formed using a dielectric material such as barium titanate (BaTiO 3 ), and thus can include a dielectric microstructure after firing. The dielectric microstructure can include a plurality of crystal grains, grain boundaries disposed between the adjacent crystal grains, and triple points disposed at points where three or more of the grain boundaries meet, and can include a plurality of each.

[0106] However, the composition of the third dielectric layer may be different from the composition of the second dielectric layer. For example, the third dielectric layer included in the side margin portions 114 and 115 may not contain gallium (Ga) or phosphorus (P).

[0107] Therefore, the composition of the second dielectric layer included in the cover portions 112 and 113 can be different from the composition of the third dielectric layer included in the side margin portions 114 and 115.

[0108] In other words, the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) included in the second dielectric layer may be greater than the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) included in the third dielectric layer.

[0109] Also, the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) included in the second dielectric layer may be greater than the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) included in the third dielectric layer.

[0110] Here, that the third dielectric layer of the side margin portions 114 and 115 does not contain gallium (Ga) or phosphorus (P) can mean that it does not contain gallium (Ga) or phosphorus (P) in the state of a dielectric slurry or a dielectric green sheet before firing the third dielectric layer, or can mean that the third dielectric layer located in the central region of the side margin portions 114 and 115 does not contain gallium (Ga) or phosphorus (P).

[0111] That is, the gallium (Ga) or phosphorus (P) contained in the second dielectric layer of the cover portions 112 and 113 described above may diffuse into the region of the third dielectric layer of the side margin portions 114 and 115 adjacent to the cover portions 112 and 113 as the firing process such as high-temperature heat treatment progresses. However, it can be meant that gallium (Ga) or phosphorus (P) may not be detected in the third dielectric layer located in the central region of the side margin portions 114 and 115.

[0112] For example, when observing a 5 μm × 5 μm region located at the centers in the first direction and the third direction of the side margin portions 114 and 115 with reference to the cross-sections in the first direction and the third direction at the center in the second direction of the multilayer electronic component 100 in the energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM) or a transmission electron microscope (TEM), it can be meant that gallium (Ga) or phosphorus (P) is not detected from the region, or gallium (Ga) is detected at less than 0.5 at% and phosphorus (P) is detected at less than 0.1 at%.

[0113] On the other hand, the width wm of the first side margin portion 114 and the second side margin portion 115 does not need to be particularly limited.

[0114] However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component 100, the width wm of the side margin portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and in the case of a super-small product, more preferably 20 μm or less.

[0115] Here, the width wm of the side margin portions 114 and 115 can mean the size of the side margin portions 114 and 115 in the third direction. Further, the width wm of the side margin portions 114 and 115 can mean the average width wm of the side margin portions 114 and 115 and can mean the average size of the side margin portions 114 and 115 in the third direction.

[0116] The average size of the side margin portions 114 and 115 in the third direction can be measured by scanning an image of the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image of a scanned side margin portion, it can mean the average value calculated by measuring the size in the third direction at 10 equally spaced points in the first direction.

[0117] In one embodiment of the present invention, a structure in which the stacked electronic component 100 has two external electrodes 131 and 132 is described. However, the number, shape, etc. of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 and other purposes.

[0118] The external electrodes 131 and 132 are arranged on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0119] More specifically, the external electrodes 131 and 132 can include a first external electrode 131 and a second external electrode 132 that are respectively arranged on the third surface 3 and the fourth surface 4 of the main body 110 and are respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0120] Also, the external electrodes 131 and 132 can be arranged to extend to a part on the first surface 1 and the second surface 2 of the main body 110, or can be arranged to extend to a part on the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 can be arranged on a part of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110, and the second external electrode 132 can be arranged on a part of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110.

[0121] On the other hand, the external electrodes 131 and 132 may be formed of any material as long as it has electrical conductivity, such as metal. Specific materials may be determined in consideration of electrical characteristics, structural stability, etc., and they may further have a multilayer structure.

[0122] For example, the external electrodes 131 and 132 can include an electrode layer disposed on the main body 110 and a plating layer disposed on the electrode layer.

[0123] As a more specific example of the electrode layer, the electrode layer can include a first electrode layer 131a, 132a which is a fired electrode containing a first conductive metal and glass, or a second electrode layer 131b, 132b which is a resin-based electrode containing a second conductive metal and resin.

[0124] Here, the conductive metal contained in the first electrode layers 131a and 132a can be referred to as the first conductive metal, and the conductive metal contained in the second electrode layers 131b and 132b can be referred to as the second conductive metal. At this time, the first conductive metal and the second conductive metal can be the same as or different from each other. When including a plurality of conductive metals, only a part can contain the same conductive metal, but it is not particularly limited thereto.

[0125] Also, the electrode layers 131a, 132a, 131b, and 132b may be in a form in which a fired electrode and a resin-based electrode are sequentially formed on the main body 110.

[0126] Also, the electrode layers 131a, 132a, 131b, and 132b may be formed by a method of transferring a sheet containing a conductive metal onto the main body, or may be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0127] As the conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b, a material with excellent electrical conductivity can be used. For example, the conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0128] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, and 132b can have a two-layer structure including a first electrode layer 131a, 132a and a second electrode layer 131b, 132b. Thus, the external electrodes 131, 132 can include the first electrode layers 131a, 132a including a first conductive metal and glass, and the second electrode layers 131b, 132b disposed on the first electrode layers 131a, 132a and including a second conductive metal and resin.

[0129] By including glass in the first electrode layers 131a, 132a, it can play a role in improving the bonding property with the main body 110, and by including resin in the second electrode layers 131b, 132b, it can play a role in improving the bending strength.

[0130] The first conductive metal contained in the first electrode layers 131a, 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121, 122 for capacitance formation. For example, it can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0131] The first electrode layers 131a, 132a can be formed by applying a conductive paste provided by adding glass frit to first conductive metal particles and then firing.

[0132] The second conductive metal contained in the second electrode layers 131b and 132b can serve to be electrically connected to the first electrode layers 131a and 132a.

[0133] The conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it can be electrically connected to the electrode layers 131a and 132a, and can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0134] The second conductive metal contained in the second electrode layers 131b and 132b can include one or more of spherical particles and flake-like particles. That is, the second conductive metal can consist only of flake-like particles, or only of spherical particles, or can be in a form in which flake-like particles and spherical particles are mixed. Here, the spherical particles can also include forms that are not completely spherical. For example, it can include forms in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. The flake-like particles mean particles having a flat and elongated form, and are not particularly limited. For example, the length ratio of the major axis to the minor axis (major axis / minor axis) can be 1.95 or more. The lengths of the major axis and the minor axis of the above spherical particles and flake-like particles can be measured from an image obtained by scanning the cross-sections in the first and second directions cut at the central part in the third direction of the multilayer electronic component with a scanning electron microscope (SEM).

[0135] The resin contained in the second electrode layers 131b and 132b can serve to ensure bonding properties and absorb shock. The resin contained in the second electrode layers 131b and 132b has bonding properties and shock absorbency, and is not particularly limited as long as it can be mixed with the second conductive metal particles to form a paste. For example, it can include an epoxy resin.

[0136] In addition, the second electrode layers 131b and 132b can include a plurality of second conductive metal particles, an intermetallic compound, and a resin. By including the intermetallic compound, the electrical connectivity with the first electrode layers 131a and 132a can be further improved. The intermetallic compound plays a role in connecting a plurality of metal particles to improve electrical connectivity and can also play a role in surrounding and connecting the plurality of metal particles to each other.

[0137] At this time, the intermetallic compound can include a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing processes, forms a part of the metal particles and the intermetallic compound, and comes to surround the metal particles. At this time, the intermetallic compound can preferably include a low melting point metal of 300 °C or lower.

[0138] For example, Sn having a melting point of 213 to 220 °C can be included as the intermetallic compound. During the drying and curing processes, Sn melts, and the melted Sn wets high melting point metal particles such as Ag, Ni, or Cu by capillary action and reacts with a part of the Ag, Ni, or Cu metal particles to form 3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 , Cu 3 intermetallic compounds such as Sn. Ag, Ni, or Cu that did not participate in the reaction remain in the form of metal particles.

[0139] Therefore, the plurality of second conductive metal particles include one or more of Ag, Ni, and Cu, and the intermetallic compound can include one or more of 3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 and Cu 3 Sn.

[0140] The plating layers 131c and 132c can play a role in improving the mounting characteristics.

[0141] The types of the plating layers 131c and 132c are not particularly limited, and may be single-layer plating layers 131c and 132c containing one or more of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof, or may be formed of a plurality of layers.

[0142] As a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or may be in a form in which a Ni plating layer and an Sn plating layer are sequentially formed on the electrode layer, or may be in a form in which an Sn plating layer, a Ni plating layer, and an Sn plating layer are sequentially formed. Further, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0143] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0144] However, in order to simultaneously achieve miniaturization and high capacity, the thicknesses of the dielectric layer and the internal electrodes need to be reduced and the number of laminations needs to be increased. Therefore, the effects of the present invention can be more remarkable in the multilayer electronic component 100 having a size of 3216 (length × width: 3.2 mm × 1.6 mm) or less.

[0145] Hereinafter, the present invention will be described in more detail with reference to examples, which are for helping a specific understanding of the present invention, and the scope of the present invention is not limited by the examples.

[0146] (Test Example) Comparative Example 1 was fabricated as a multilayer electronic component including a cover portion and a side margin portion, and was fabricated as a multilayer electronic component in which gallium (Ga) and phosphorus (P) were not added to the cover portion and the side margin portion, and a chip was provided.

[0147] Example 1 was fabricated as a stacked electronic component in which the number of moles of gallium (Ga) relative to 100 moles of titanium (Ti) was added in the range of 0.3 moles or more and 6.0 moles or less, and the number of moles of phosphorus (P) relative to 100 moles of titanium (Ti) was added in the range of more than 0 moles and 5.0 moles or less, and a chip was provided. Except for this, the chip was fabricated in the same manner as in Comparative Example 1.

[0148] Figure 5(a) is an image taken in the high-angle annular dark-field (HAADF) mode of a transmission electron microscope (TEM) of the cross-section of the upper cover part of Comparative Example 1 in the first direction and the third direction. Figure 5(b) is an image obtained by performing EDS analysis in the region of Figure 5(a) and mapping the aluminum (Al) element. Figure 5(c) is an image obtained by performing EDS analysis in the region of Figure 5(a) and mapping the silicon (Si) element.

[0149] Figure 6(a) is an image taken in the HAADF mode of a transmission electron microscope (TEM) of the cross-section of the upper cover part of Example 1 in the first direction and the third direction. Figure 6(b) is an image obtained by performing EDS analysis in the region of Figure 6(a) and mapping the aluminum (Al) element. Figure 6(c) is an image obtained by performing EDS analysis in the region of Figure 6(a) and mapping the silicon (Si) element. Figure 6(d) is an image obtained by performing EDS analysis in the region of Figure 6(a) and mapping the gallium (Ga) element.

[0150] Figure 7 corresponds to a region different from Figure 6(a). It is an image obtained by taking a cross-section of the upper cover part of Example 1 in the first direction and the third direction with a transmission electron microscope (TEM) and then performing EDS analysis to map the phosphorus (P) element.

[0151] From Comparative Example 1 and Example 1, when gallium (Ga) is included in the cover portion, it can be confirmed that gallium (Ga) is disposed at the shell portion of the core-shell crystal grains, inside the crystal grains, at the crystal grain boundaries, and at the triple points. Since gallium (Ga) is detected together in the regions where silicon (Si) and aluminum (Al) are detected, it can be seen that gallium (Ga) is disposed in the secondary-phase containing silicon (Si) and aluminum (Al).

[0152] Also, when phosphorus (P) is included in the cover portions 112 and 113, phosphorus (P) can be disposed at the shell portion of the core-shell crystal grains, inside the crystal grains, at the crystal grain boundaries, and at the triple points. From the fact that phosphorus (P), which is predicted to be a secondary-phase, is observed as an aggregate having a certain region, it can be seen that phosphorus (P) is disposed in the secondary-phase.

[0153] Next, 28 chips each were fabricated for Comparative Example 2 and Comparative Example 3 under the same conditions as Comparative Example 1, and 28 chips each were fabricated for Example 2 and Example 3 under the same conditions as Example 1.

[0154] For Comparative Example 2 and Example 2, a moisture resistance reliability evaluation was performed, and for Comparative Example 3 and Example 3, a highly accelerated life test (HALT), which is a reliability evaluation under harsh conditions, was performed.

[0155] (a) of FIG. 8 is a moisture resistance reliability evaluation graph of Comparative Example 2, and (b) of FIG. 8 is a moisture resistance reliability evaluation graph of Example 2.

[0156] In the moisture resistance reliability evaluation, when a short circuit occurred when a rated voltage of 1.5 Vr was applied for 26 hours under temperature conditions of 85° C. and relative humidity conditions of 85%, the chip was evaluated as defective.

[0157] (a) of FIG. 9 is a reliability evaluation graph under harsh conditions of Comparative Example 3, and (b) of FIG. 9 is a reliability evaluation graph under harsh conditions of Example 3.

[0158] For the HALT evaluation, when a voltage of 1.5 Vr was applied at a temperature of 125 °C for 30 hours, chips in which a short circuit occurred were evaluated as defective, and the average time to failure (MTTF) was obtained by averaging the time at which the short circuit occurred.

[0159] In the case of Comparative Example 2, short circuits occurred in all 28 chips, while in the case of Example 2, short circuits occurred in 8 out of 28 chips.

[0160] Next, in the case of Comparative Example 3, the average time to failure (MTTF) was 1.6 hours, while in the case of Example 3, the average time to failure (MTTF) was 16.6 hours, and the life increased by about 10.4 times compared to Comparative Example 3.

[0161] Thus, it can be seen that when the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover part is 0.3 moles or more and 6.0 moles or less, and the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) is more than 0 moles and 5.0 moles or less, the moisture resistance reliability and the average time to failure (MTTF) are improved.

[0162] Next, the contents of gallium (Ga) and phosphorus (P) with respect to 100 moles of titanium (Ti) contained in the cover part were varied and described in [Table 1] below. The slurry dispersibility, crystal grain size, porosity, moisture resistance reliability, and average time to failure (MTTF) during the HALT evaluation for each test example were measured and described in [Table 2] below.

[0163] Ga in Table 1 corresponds to the number of moles of gallium with respect to 100 moles of titanium (Ti) contained in the cover part, and P corresponds to the number of moles of phosphorus with respect to 100 moles of titanium (Ti) contained in the cover part. For the slurry dispersibility, when aggregates occurred in the state of the dielectric slurry, it was described as "X", and when aggregates did not occur, it was described as "O".

[0164] The crystal grain size in Table 2 describes the average size of the crystal grains contained in a 10 μm × 10 μm region of the cross-sections in the first and third directions of the cover part. The porosity (porosity, %) is obtained by calculating the area of the pores with respect to the area of 15 μm × 15 μm of the cross-sections in the first and third directions of the cover part using a program, and then expressing this as a percentage (%). The moisture resistance reliability is described by counting the number of chips in which a short circuit occurred when a rated voltage of 1.5 Vr was applied for 26 hours under temperature conditions of 85°C and relative humidity conditions of 85% after manufacturing 28 chips for each test example. The MTTF is obtained by performing a HALT evaluation in which a rated voltage of 1.5 Vr is applied for 30 hours at a temperature condition of 125°C after manufacturing 28 chips for each test example. At this time, the MTTF is obtained by averaging the times of the chips in which a short circuit occurred, and this is described.

[0165]

Table 1

[0166]

Table 2

[0167] When the gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover part satisfies 0.3 mole or more and 6.0 moles or less, it can be seen that aggregation of the dielectric slurry does not occur and the moisture resistance reliability and the mean time to failure (MTTF) are improved.

[0168] Also, when the gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover part is 0.3 mole or more and 6.0 moles or less, and the phosphorus (P) with respect to 100 moles of titanium (Ti) contained in the cover part is more than 0 mole and 5.0 moles or less, it can be seen that generally the porosity (%) and the moisture resistance reliability are further improved compared to the case where the gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover part is 0.3 mole or more and 6.0 moles or less and does not contain phosphorus (P).

[0169] As a result, it can be understood that when the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover part is 0.3 moles or more and 6.0 moles or less, and the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) is more than 0 moles and 5.0 moles or less, the moisture resistance reliability and the mean time to failure (MTTF) are improved.

[0170] Next, when the ratio (A / B) of the number of moles of barium (Ba) to the number of moles of titanium (Ti) (B) contained in the cover part was varied, the degree of denseness of the dielectric microstructure was evaluated, the breakdown voltage (BDV) was measured, and the results are shown in the following [Table 3].

[0171] The test examples in Table 3 were prepared such that the number of moles of gallium (Ga) with respect to 100 moles of titanium (Ti) contained in the cover part was 0.3 moles or more and 6.0 moles or less, and the number of moles of phosphorus (P) with respect to 100 moles of titanium (Ti) was more than 0 moles and 5.0 moles or less, except that the ratio of A / B was varied.

[0172] A / B in Table 3 means the number of moles of barium (Ba) with respect to the number of moles of titanium (Ti) (B) contained in the cover part.

[0173] The denseness was determined using a pore calculation program after taking an image by observing the porosity (%) of the cover part in the cross-sections in the first and second directions including the cover part of the chip with a scanning electron microscope (SEM). When the porosity (%) was 0.30% or less, it was evaluated as good and described as "O", and when the porosity (%) exceeded 0.30%, it was evaluated as bad and described as "X".

[0174] BDV was measured as the voltage (V) at which a short circuit occurs when the voltage was increased while raising the current of 20 mA in 0.17-second intervals by 1 V at a time using equipment from Keithley.

[0175]

Table 3

[0176] From Test Examples 16 to 22, it can be seen that by satisfying that the ratio (A / B) of the number of moles (A) of barium to the number of moles (B) of titanium (Ti) contained in the cover part is 0.99 or more and 1.05 or less, the density is improved and the breakdown voltage (BDV) is excellent.

[0177] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the attached drawings, but is limited by the attached claims. Therefore, within the scope not departing from the technical idea of the present invention described in the claims, various forms of substitution, modification, and change can be made by those having ordinary knowledge in the technical field, and it can be said that these also belong to the scope of the present invention.

[0178] In addition, the expression "one embodiment" used in the present invention does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, the above-presented one embodiment does not exclude being realized in combination with the features of another one embodiment. For example, even if the matter described in a specific one embodiment is not described in another one embodiment, it can be understood as an explanation related to another one embodiment as long as there is no explanation contrary to or conflicting with that matter in another one embodiment.

[0179] The terms used in the present invention are merely used to explain one embodiment and are not intended to limit the present invention. At this time, the singular expression includes the plural expression unless the context clearly indicates a different meaning.

Explanation of Reference Numerals

[0180] 100: Multilayer electronic component 110: Body 111: Dielectric layer 112, 113: Cover part 114, 115: Side margin part 121, 122: Internal electrodes 131, 132: External electrodes

Claims

1. a capacitance forming portion including dielectric layers and internal electrodes arranged alternately with the dielectric layers in a first direction, and a main body including cover portions arranged on both end surfaces of the capacitance forming portion in the first direction; an external electrode disposed on the body; The cover portion includes titanium (Ti), gallium (Ga), and phosphorus (P), The number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the cover is 0.3 moles or more and 6.0 moles or less.

2. 2. The multilayer electronic component according to claim 1, wherein the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the cover is more than 0 moles and is not more than 5.0 moles.

3. when the dielectric layer of the capacitance forming portion is a first dielectric layer, the cover portion includes a second dielectric layer, 2. The multilayer electronic component according to claim 1, wherein the composition of the first dielectric layer is different from the composition of the second dielectric layer.

4. 4. The multilayer electronic component according to claim 3, wherein the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the first dielectric layer.

5. 4. The multilayer electronic component according to claim 3, wherein the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the first dielectric layer.

6. The cover portion includes a plurality of crystal grains including crystal grains having a core-shell structure, crystal grain boundaries disposed between adjacent crystal grains, triple points disposed at points where three or more of the crystal grain boundaries meet, and a secondary phase; 2. The multilayer electronic component according to claim 1, wherein at least one of a shell portion, a grain boundary, a triple point, and a secondary phase of the core-shell crystal grains included in the cover portion includes a region having a phosphorus (P) content of less than 0.1 at %.

7. The cover portion further includes barium (Ba), 2. The multilayer electronic component according to claim 1, wherein a ratio (A / B) of a number of moles (A) of barium (Ba) to a number of moles (B) of titanium (Ti) contained in the cover portion satisfies 0.99≦A / B≦1.

05.

8. the main body includes a first surface and a second surface facing each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in the second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface, and the fourth surface and facing each other in the third direction, the multilayer electronic component further includes side margin portions disposed on the fifth surface and the sixth surface, the cover portion includes a second dielectric layer, and the side margin portion includes a third dielectric layer; The multilayer electronic component according to claim 1 , wherein the composition of the second dielectric layer is different from the composition of the third dielectric layer.

9. 9. The multilayer electronic component according to claim 8, wherein the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the third dielectric layer.

10. 9. The multilayer electronic component according to claim 8, wherein the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the third dielectric layer.

11. a capacitance forming portion including dielectric layers and internal electrodes arranged alternately with the dielectric layers in a first direction, and a main body including cover portions arranged on both end surfaces of the capacitance forming portion in the first direction; an external electrode disposed on the body; The cover portion includes titanium (Ti), gallium (Ga), and phosphorus (P), The number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the cover portion is more than 0 moles and not more than 5.0 moles.

12. when the dielectric layer of the capacitance forming portion is a first dielectric layer, the cover portion includes a second dielectric layer, The multilayer electronic component according to claim 11 , wherein the composition of the first dielectric layer is different from the composition of the second dielectric layer.

13. 13. The multilayer electronic component according to claim 12, wherein the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the first dielectric layer.

14. 13. The multilayer electronic component according to claim 12, wherein the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the first dielectric layer.

15. The cover portion includes a plurality of crystal grains including crystal grains having a core-shell structure, crystal grain boundaries disposed between adjacent crystal grains, triple points disposed at points where three or more of the crystal grain boundaries meet, and a secondary phase; 12. The multilayer electronic component according to claim 11, wherein at least one of a shell portion, a grain boundary, a triple point, and a secondary phase of the core-shell crystal grains included in the cover portion includes a region having a phosphorus (P) content of less than 0.1 at %.

16. The cover portion further includes barium (Ba), 12. The multilayer electronic component according to claim 11, wherein a ratio (A / B) of the number of moles (A) of barium (Ba) to the number of moles (B) of titanium (Ti) contained in the cover portion satisfies 0.99≦A / B≦1.

05.

17. the main body includes a first surface and a second surface facing each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in the second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface, and the fourth surface and facing each other in the third direction, the multilayer electronic component further includes side margin portions disposed on the fifth surface and the sixth surface, the cover portion includes a second dielectric layer, and the side margin portion includes a third dielectric layer; 17. The multilayer electronic component according to claim 11, wherein the composition of the second dielectric layer is different from the composition of the third dielectric layer.

18. 18. The multilayer electronic component according to claim 17, wherein the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the third dielectric layer.

19. 18. The multilayer electronic component according to claim 17, wherein the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the second dielectric layer is greater than the number of moles of phosphorus (P) per 100 moles of titanium (Ti) contained in the third dielectric layer.

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