Semiconductor device and electric power conversion device

Abstract

To separate an electrode terminal of a power module from an electrode and to post-attach the separated electrode terminal to the electrode accurately, to thereby facilitate change in electrode position of a transfer molded-power module, even when the shape of the power module is required to be changed.SOLUTION: A semiconductor device comprises: a semiconductor chip; a mold resin 2 that incorporates the semiconductor chip; an electrode 3 electrically connected to the semiconductor chip and exposed at an opening 5 provided in the mold resin 2; and an electrode terminal 4 that comprises a contact portion 9 covering the electrode 3 and coming in electric contact with the electrode, and a plurality of projections 7 and 8 that are formed in such a way as to surround the contact portion 9 and provided between a lateral face 13 of the opening 5 and the contact portion 9, and that have contact end portion 11 having the contact portion 9 and an open end portion 12 different from the contact end portion 11.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to an invention of a semiconductor device such as a transfer molded power module that post-attaches an electrode terminal to an electrode.

Background Art

[0002] Conventionally, a power semiconductor device has been disclosed in which a plurality of lead frames are electrically connected to a power semiconductor chip encapsulated in a mold resin, and the plurality of lead frames protrude outside the housing by being encapsulated with the mold resin together with the power semiconductor chip. (For example, see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When producing a transfer molded power module (TPM), the position of the electrode is fixed inside the mold of the transfer molded power module. When the electrode position of the module changes, the shape of the transfer molded power module needs to be changed. For this reason, changes occur in the mold and the shape of the frame for creating the electrode corresponding to the mold and the entire manufacturing process, and problems such as costs associated with the changes occur.

[0005] The present disclosure has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device that separates an electrode terminal of a power module from an electrode and easily changes the electrode position of the module by accurately post-attaching the separated electrode terminal to the electrode.

Means for Solving the Problem

[0006] In addition, the semiconductor device according to the present disclosure includes a semiconductor chip, a mold resin encapsulating the semiconductor chip, an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the mold resin, and a contact portion covering the electrode and making electrical contact with the electrode. The electrode terminal has an open end portion that is a different end portion from the contact end portion having the contact portion. The mold resin has a plurality of protrusions between the side surface of the opening and the contact portion of the electrode terminal.

Effect of the Invention

[0007] According to the semiconductor device according to the present disclosure, even if the electrode position of the module is changed, it is possible to avoid the occurrence of costs associated with the change.

Brief Description of the Drawings

[0008]

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Embodiments for Carrying Out the Invention

[0009] Embodiment 1. The semiconductor device according to Embodiment 1 will be described with reference to FIG. 1. FIG. 1 is a perspective view of the semiconductor device according to Embodiment 1. The semiconductor device 1 according to Embodiment 1 is a transfer mold type module. The transfer mold type module refers to a module formed, for example, by fixing a semiconductor chip and electrodes connected to the semiconductor chip in a mold and pouring and curing a mold resin inside the mold.

[0010] As shown in FIG. 1, the semiconductor device 1 includes a semiconductor chip (not shown), a mold resin 2 that encapsulates the semiconductor chip, an electrode 3 that is partially encapsulated in the mold resin 2 and partially exposed at an opening 5 of the mold resin 2, and an electrode terminal 4 that is separated from the electrode 3 and joined to the electrode 3 by a metal joining such as solder joining, US joining, or Ag joining. Also, although not shown, the semiconductor chip is electrically connected to the electrode 3.

[0011] The mold resin 2 is, for example, a rectangular parallelepiped having six planes and has a plurality of rectangular openings 5. The openings 5 are provided on a pair of opposite sides on the upper surface of the mold resin 2. The openings 5 are open to the upper surface of the mold resin 2 and the side surfaces adjacent to the upper surface and including the above-mentioned sides.

[0012] In this embodiment, two openings 5 are provided. However, for example, two or more openings may be provided. Also, the openings 5 may be provided at any position of the mold resin 2. Further, the openings 5 may have a rectangular shape in a plan view as seen from the upper part of the module as shown in FIG. 1, but may be changed to a semicircular shape, a polygonal shape, etc. according to the shape of the electrode terminal 4.

[0013] The opening 5 has a bottom surface 6. The bottom surface 6 has, for example, a plane parallel to the upper surface of the mold resin 2 and is located between the upper surface and the bottom surface of the mold resin 2. An electrode electrically connected to the semiconductor chip is exposed on the bottom surface 6. In other words, the opening 5 provides a step at the portion of the electrode 3 of the semiconductor module 1 to locally expose the electrode 3.

[0014] The opening 5 may have a tapered shape such that the cross-sectional area in a plane parallel to the electrode 3 increases in the direction from the bottom surface 6 toward the outside of the mold resin 2. Alternatively, the opening 5 may have a straight shape such that the cross-sectional area in a plane parallel to the electrode 3 is constant in the direction from the bottom surface 6 toward the outside of the mold resin 2.

[0015] The electrode terminal 4 covers the electrode 3 and is located inside the opening 5 and has a plurality of protrusions 7 and 8 at a contact portion 9 that contacts the electrode 3. In FIG. 1, the electrode terminals 4 are similarly connected to the two openings 5 provided in the mold resin 2. Here, the protrusion 7 is the first protrusion, and the protrusion 8 is the second protrusion. However, the first and second descriptions here do not indicate the functional priority of the configuration or the like, and are merely for distinguishing the configuration of the protrusion. The electrode terminal 4 will be described in more detail with reference to FIG. 2. As shown in FIG. 1, the electrode terminal 4 has a screw hole 10 at an end different from the side in contact with the electrode 3.

[0016] FIG. 2 is an enlarged plan view of the opening 5 and the electrode terminal 4 connected to the electrode 3 exposed in the opening 5 of the semiconductor device 1 according to Embodiment 1. As shown in FIG. 2, the electrode terminal 4 has a contact portion 9 that covers the electrode 3 and is in electrical contact with the electrode 3. Further, the electrode terminal 4 has a contact end portion 11 having the contact portion 9 and an open end portion 12 that is an end different from the contact end portion 11. The plurality of first protrusions 7 are formed so as to surround the contact portion 9 and are provided between the side surface 13 of the opening 5 and the contact portion 9. Further, the plurality of first protrusions 7 are provided at both ends of the contact portion 9 in the width direction of the electrode terminal 4, respectively.

[0017] The electrode terminal 4 is provided with a second protrusion 8 at the contact end portion 11 in the contact portion 9. In FIG. 2, an example is shown in which two first protrusions 7 are provided at both ends in the width direction of the electrode terminal 4, respectively, and one second protrusion 8 is provided at the contact end portion 11. However, the number of the first protrusions 7 and the second protrusions 8 is not limited to this. For example, the clearance around the electrode terminal 4 may be ensured by providing one first protrusion 7 at each of both ends in the width direction of the electrode terminal 4 without providing the second protrusion 8. The first protrusions 7 and the second protrusions 8 can ensure a clearance of 10 μm or more between the side surface 13 of the opening 5 and the contact portion 9.

[0018] Thus, by providing the first protrusions 7 and the second protrusions 8 on the electrode terminal 4, the joining position of the electrode terminal 4 with the electrode 3 can be accurately positioned and mounted by the outer shape matching between the side surface 13 of the opening 5 and the electrode terminal 4 having the protrusions. In addition, it becomes possible for the solder or the like serving as a joining material to climb up the side surface.

[0019] Further, as shown in FIG. 2, the open end portion 12 of the electrode terminal 4 has a screw tightening hole 10 (through hole) for connecting the semiconductor device 1 to an upper system. As a method of connecting the semiconductor device 1 to the upper system by the open end portion 12, in addition to screw tightening, there may be a pattern without the screw tightening hole 10 such as US (Ultrasonic) bonding, welding, and bonding with a bonding material.

[0020] FIG. 3 shows a modified example of the electrode terminal 4 according to the first embodiment. FIG. 3 omits the screw tightening hole 10 shown in FIG. 2. When the semiconductor device 1 is connected to the upper system by US bonding, welding, or bonding with a bonding material at the open end portion 12, the electrode terminal 4 is configured as shown in FIG. 3. In this case, the screw tightening hole 10 shown in FIG. 2 can be omitted, and the manufacturing process of the electrode terminal 4 can be simplified.

[0021] FIG. 4 shows a modified example of the electrode terminal 4 according to Embodiment 1. As shown in FIG. 4, in the electrode terminal 14, the open end 12 extends in a direction different from that of the electrode terminal at the contact portion 9 on the surface where the electrode terminal 14 extends. Since the three-dimensional position (x, y, z) of the electrode terminal determines the positional accuracy of the open end 12 connected to the upper system, for example, electrode terminals having shapes different from the rectangular electrode terminal 4 and various sizes can be freely laid out.

[0022] FIG. 5 shows a modified example of the electrode terminal 4 according to Embodiment 1. As shown in FIG. 5, the electrode terminal 14 may have a through hole 16 at the contact portion 9. Note that the through hole 16 is not limited to one, and a plurality of through holes may be provided. Further, the shape of the through hole 16 is not limited to a circular shape, and may be a rectangular shape or a shape defined by a quadratic curve. By providing the through hole 16, the bonding property of the electrode terminal 14 and the electrode 3 with a bonding agent such as solder is improved, and it becomes possible to check the presence or absence of bonding.

[0023] FIGS. 6 and 7 show modified examples of the electrode terminal according to Embodiment 1. More specifically, FIG. 6 shows the open end 12 side of the electrode terminal 14 shown in FIG. 4 bent upward. FIG. 6 is a view of the semiconductor device 1 in FIG. 4 as seen from the outside of the mold resin 2 in the extending direction of the electrode terminal 14 at the contact portion 9.

[0024] FIG. 7 shows a modified example in which the electrode terminal 14 shown in FIG. 6 is further bent above the upper surface of the mold resin 2 and so as to cover the electrode 3. FIG. 7 shows a cross section of the side of the electrode 3 parallel to the extending direction of the electrode terminal 14 at the contact portion 9 in order to make the bent electrode terminal 14 easier to see. Specifically, FIG. 6 shows a cross section corresponding to the A-A' cross section in FIG. 2.

[0025] In FIG. 7, the electrode terminal 14 has two bent portions 15, so that the open end 12 is positioned on the upper surface of the 9-contact portion. As shown in FIG. 7, the two bent portions 15 are provided between the contact portion 9 and the open end portion 12 of the electrode terminal 15, and each bent portion 15 is bent by about 90° so that the open end 12 is positioned on the upper surface of the 9-contact portion. The example of the bent portion 15 is not limited to this, and it may be bent so that the open end 12 is positioned on the lower surface of the 9-contact portion.

[0026] As shown in FIGS. 6 and 7, by bending the electrode terminal 14 in an arbitrary direction, a free layout of the open terminal 12 of the electrode terminal 14 is possible, and it is also possible to arrange the attachment portion of the electrode terminal on the upper surface of the transfer mold type power module.

[0027] The transfer mold type power module may be used as a connection module in which a plurality of modules of the same type are connected as a general usage method. However, since it is molded by a mold, the position and size of the terminals are fixed, so it is difficult to have a free layout. Therefore, when the electrode position of the module is changed, the shape of the transfer mold type power module needs to be changed, and there are restrictions such as changing the shape of the mold and the frame and considering the entire manufacturing process.

[0028] According to this embodiment, it is possible to provide a semiconductor device that facilitates the change of the electrode position of the module by separating the electrode terminal of the power module from the electrode and accurately attaching the separated electrode terminal to the electrode later.

[0029] Figs. 8 and 9 show the joint portion of the electrode terminal 4 according to Embodiment 1. As shown in Fig. 8, when the electrode terminal 4 is joined to the electrode 3, it is joined with solder or an adhesive 17 such as a solvent. The adhesive 17 escapes between the first protrusion 7 and the second protrusion 8 and the side surface 13 of the opening 5 and onto the surface of the electrode 3. The electrode terminal 4 can also be joined by metal joining such as US joining. However, in the case of joining with solder, a conductive adhesive, etc., a clearance due to protrusions can be formed between the side surface 13 of the opening 5 and the electrode terminal 4, so that gas components such as solvents can be easily discharged. In addition, by forming a fillet or the like of the joining material on the side surface of the electrode terminal 4, it is possible to improve the joining strength. In the quality check of the terminal joining, for the misalignment of the mounting positions of the electrode terminal 4 and the electrode 3, etc., the positions of the first protrusion 7 and the second protrusion 8 may be checked by automatic appearance inspection. Thereby, since the recognition is improved and the determination becomes easy, the man-hours for manufacturing the semiconductor device can be reduced.

[0030] Fig. 10 is a view showing the opening 5 sealed with a sealing agent 20 as a modification of Embodiment 1. After joining the electrode terminal 4 to the electrode 3, the opening 5 is buried with a sealing agent 20 such as gel or resin. Thereby, the joint portion of the electrode terminal 4 and the electrode 3 can be insulated from the outside, and further improvement in quality and function can be achieved. In addition, product design with surface insulation and space insulation maintained along the electrode terminal 4 becomes easy.

[0031] Embodiment 2. Fig. 11 is a view showing a semiconductor device according to Embodiment 2. More specifically, Fig. 11 is an enlarged view of the electrode terminal 21 of the semiconductor device according to Embodiment 2. The components corresponding to those in Embodiment 1 in Fig. 11 are denoted by the same reference numerals. As shown in Fig. 11, the electrode terminal 21 according to Embodiment 2 has third protrusions 22 at both ends in the width direction of the electrode terminal 21 at the contact portion 9.

[0032] The side surface 13 of the opening 5 has recesses 23 at positions corresponding to the third protrusions. That is, the opening 5 has recesses 23 on both sides in the width direction of the electrode terminal 21 at the contact portion 9. And the third protrusions 22 and the recesses 23 are engaged with each other.

[0033] Since the opening 5 has a recess 23 that engages with the third protrusion 22, the positioning accuracy of the electrode terminal 21 with respect to the electrode 3 is further improved. In the second embodiment, the third protrusion 22 and the recess 23 are rectangular in shape, but the shape is not limited to this. Further, by forming the size of the third protrusion 22 to be smaller than that of the recess 23, the insertion of the electrode terminal 21 into the opening 5 becomes smoother and the productivity is improved.

[0034] FIG. 12 is a diagram showing a modified example of the electrode terminal according to the second embodiment. FIG. 12 shows the electrode terminal 21 shown in FIG. 11 further provided with the first protrusion 7 and the second protrusion 8 described in the first embodiment. More specifically, the electrode terminal 26 shown in FIG. 12 has the first protrusion 7 at both ends in the width direction of the electrode terminal 26 at the contact portion 9, and further has the second protrusion 8 at the contact end portion 11 of the electrode terminal 26. In the present disclosure, an example is shown in which two first protrusions 7 and one second protrusion 8 are provided at the contact portion 9, but the number of protrusions may be more than this.

[0035] In addition to the third protrusion 22 that engages with the recess 23, by having the first protrusion 7 and the second protrusion 8 between the side surface 13 of the opening 5 and the contact portion 9, the positioning accuracy of the electrode terminal 26 with respect to the electrode 3 is further improved.

[0036] Embodiment 3. FIG. 13 shows a cross-section of the opening of the semiconductor device according to the third embodiment. More specifically, it is a diagram corresponding to the cross-section of B-B' of the semiconductor device shown in FIG. 2. However, the shape of the opening 5 shown in FIG. 2 is different in FIG. 13. In addition, in the configuration shown in the third embodiment, components having the same reference numerals as those in the first or second embodiment represent the same configuration, and thus the description thereof is omitted.

[0037] As shown in Fig. 13, the opening 28 includes a straight portion 29 where the cross-section of the opening 28 is constant in the direction from the bottom 31 of the opening 28 toward the outside of the resin mold 2, and a tapered portion 30 where the cross-section of the opening 28 increases in the direction from the straight portion 29 toward the outside of the mold resin 2. Here, the cross-section of the opening 28 refers to a plane parallel to the electrode 3 and the electrode terminal 4.

[0038] The depth of the straight portion 28 is, for example, larger than the thickness of the electrode 3. Here, the depth of the straight portion 28 is the distance from the bottom 31 in the thickness direction of the electrode 3 or the electrode terminal 4. Since a draft angle occurs in normal die forming for the transfer mold type power module opening, the draft angle corresponds to the tapered portion 30.

[0039] Note that the depth of the straight portion 28 can be, for example, about 1 mm. Also, the angle of the tapered portion 30 with respect to the vertical direction can be set to, for example, 10°. Further, the distance between the terminal electrode 4 and the straight portion 28 can also be about 0 to 5 μm. Thus, by providing the straight portion 29 and the tapered portion 30 in the opening 28, the positioning accuracy of the opening 28 by the first protrusion 7, the second protrusion 8, and the third protrusion 22 of the electrode terminal 4 can be improved.

[0040] Embodiment 4. Fig. 14 is a diagram showing an electrode terminal according to Embodiment 4. As shown in Fig. 14, the electrode terminal is not in a flat shape, that is, formed on the same plane, but is warped upward or downward in the extending direction of the electrode terminal. That is, the electrode terminal 32 is curved so as to be convex downward with respect to the extending direction of the electrode terminal. On the other hand, the electrode terminal 33 is curved so as to be convex upward with respect to the extending direction of the electrode terminal 33. Here, the above refers to the side different from the electrode 3 when each of the electrode terminals 32 and 33 is installed on the electrode 3. In the configuration shown in Embodiment 4, components having the same reference numerals as those in Embodiments 1 to 3 represent the same configuration, and thus the description thereof is omitted.

[0041] Although not shown in FIG. 14, the electrode terminals 32 and 33 are warped so as to be convex downward in the width direction of the electrode terminals. That is, in the width direction of the electrode terminals 32 and 33, at least the cross section of the contact portion 9 is convexly warped toward the electrode 3. Note that the convex warped shape may extend not only to the portion of the contact portion 9 but also over the entire extending direction of the electrode terminals 32 and 33. The cross-sectional shape of the electrode terminals 32 and 33 will be described with reference to FIG. 16 below.

[0042] As shown in FIG. 14, by joining an electrode terminal that is not only flat but also pre-warped (convex or concave) to the electrode 3, the effect of the fuse at the joining point can be obtained. For example, when the inside of the module is short-circuited for some reason while the module is installed in equipment or the like, the electrode terminals 32 and 33 become hot and the solder joining the electrode terminals 32 and 33 melts. As a result, due to the repulsion of the electrode terminals 32 and 33 that have been pre-bent and warped, the electrode terminals 32 and 33 themselves bounce up, and the joining state with the electrode 3 is released, so that the electrode 3 and the electrode terminals 32 and 33 are electrically disconnected. The thickness of the electrode terminals 32 and 33 can be, for example, 0.4 mm to 2 mm.

[0043] FIGS. 15 and 16 are enlarged views of the electrode terminals according to Embodiment 4. FIG. 16 shows a cross section of the opening of the semiconductor device according to Embodiment 4. More specifically, it corresponds to the cross section taken along the line B-B' of the semiconductor device shown in FIG. 2. In FIGS. 15 and 16, an electrode terminal 32 that is curved so as to be convex downward with respect to the extending direction of the electrode terminal is shown as the electrode terminal, but it is not limited to this, and an electrode terminal 33 that is curved so as to be convex upward with respect to the extending direction of the electrode terminal may also be used.

[0044] As shown in FIGS. 15 and 16, a stepped portion 34 is provided between both ends in the width direction of the contact portion 9 of the electrode terminal 32 and the electrode 3. The stepped portion 34 is installed, for example, between the first protrusion 7 and the electrode 34, and has a rectangular thickness that is long in the extending direction of the electrode terminal 32. The stepped portion 34 may be made of the same material as the mold resin 2 or may be composed of a conductor used for electrodes or the like. In this way, by providing the stepped portion 34 inside the opening 5, that is, between both ends in the width direction of the electrode terminal 32 and the electrode 3, a clearance can be secured in advance between the electrode terminal 32 and the electrode 3, and the terminal can be easily detached actively during a short circuit, that is, it can be configured to be easily disconnected. Note that the thickness of the stepped portion 34 can be set to ○○ mm to △△ mm.

[0045] Embodiment 5. FIG. 17 is a diagram showing an electrode terminal 35 according to Embodiment 5. FIG. 18 is a diagram corresponding to the C-C' cross section in FIG. 17. That is, FIG. 18 is a diagram showing the cross section of the mold resin 2, the opening 5, and the electrode terminal 35. As shown in FIGS. 17 and 18, the electrode terminal 35 has a convex portion 36 between the contact portion 9 and the open end portion 12 of the electrode terminal 35. In the configuration shown in Embodiment 5, components having the same reference numerals as those in Embodiments 1 to 4 have the same configuration, and thus the description thereof is omitted.

[0046] Further, as shown in FIG. 18, the mold resin 2 has a stepped protrusion 37 that engages with the convex portion 36. The convex portion 36 of the electrode terminal 35 is formed by bending the electrode terminal. By providing the convex portion 36 on the electrode terminal 35 and the stepped protrusion 37 that engages with the convex portion 36, the positioning of the electrode terminal is performed. The stepped protrusion 37 is formed, for example, by making a part of the mold resin convex upward along the end of the electrode 3, so the accuracy is high. Thereby, the positioning accuracy of the electrode terminal 35 with respect to the electrode 3 is further improved.

[0047] Embodiment 6. FIG. 19 and FIG. 20 are diagrams showing the electrode terminal 38 according to Embodiment 6. FIG. 20 shows a cross section of the mold resin 2, the opening 5, and the electrode terminal 38 corresponding to the cross section D-D' of FIG. 19. In Embodiment 6, it is different from the previous embodiments in that the electrodes and the electrode terminals have through holes and through protrusions penetrating the through holes. In addition, in the configuration shown in Embodiment 6, components having the same reference numerals as those in Embodiments 1 to 5 represent the same configuration, and thus the description thereof is omitted.

[0048] As shown in FIG. 20, the electrode 3 has a through hole 41 at a position in contact with the contact portion 9 of the electrode terminal 38. Further, the electrode terminal 38 has a through hole 40 at a position corresponding to the through hole 41. That is, the through hole 40 and the through hole 41 communicate in the thickness direction of the electrode 3 or the electrode terminal 38. Here, the through hole 41 is also referred to as the first through hole 41, and the through hole 40 is also referred to as the second through hole 40. The resin mold 2 is integrally formed with a through protrusion 42 penetrating the through hole 40 and the through hole 41. Thereby, the positioning accuracy of the electrode terminal 38 with respect to the electrode 3 is further improved.

[0049] As shown in FIGS. 19 and 20, an example is shown in which the through holes 40 and 41 and the through protrusion 42 penetrating the through holes are provided at two locations each, but the present invention is not limited thereto, and any number may be provided. For example, by providing two or more through holes and corresponding through protrusions, displacement of the electrode terminal 38 on the electrode 3, particularly rotation of the electrode terminal in the plane of the electrode terminal 38, can be suppressed, and the positioning accuracy of the electrode terminal 38 with respect to the electrode 3 is further improved.

[0050] FIG. 21 is a modified example of the through hole and the through protrusion according to Embodiment 6. In FIGS. 19 and 20, the through holes 40 and 41 and the through protrusion 42 corresponding thereto are shown to have a circular configuration, but as shown in FIG. 21, the through hole 43 provided in the electrode terminal 38 and the through protrusion 44 corresponding thereto may be rectangular. Although not shown, in this case, it is desirable that the through hole provided in the electrode 3 is also rectangular.

[0051] Figures 22 and 23 are modified examples of the electrode terminals according to Embodiment 6. Figures 22 and 23 are respectively those obtained by omitting the first protrusion 7 and the second protrusion 8 in Figures 19 and 21. For other configurations, the same reference numerals denote the same configurations. That is, in Figure 22, an electrode terminal 47 having no first protrusion 7 and second protrusion 8 is joined to the electrode 3. And the electrode terminal 47 has a circular through-hole 41.

[0052] Also, in Figure 23, an electrode terminal 48 having no first protrusion 7 and second protrusion 8 is joined to the electrode 3. And the electrode terminal 48 has a rectangular through-hole 43. In Figures 22 and 23, since the shapes of the through-holes of the electrode 3 corresponding to the through-holes 41 and 43 and the through-protrusions provided integrally with the mold resin 2 are the same as those in the configurations of Figures 19 to 20, the description thereof is omitted.

[0053] As shown in Figures 22 and 23, by omitting the first protrusion 7 and the second protrusion 8, the positioning accuracy of the electrode terminals 47 and 48 can be ensured, the manufacturing process of the electrode terminals 47 and 48 can be simplified, and the manufacturing cost of the semiconductor device can be reduced.

[0054] Embodiment 7. Figure 24 is an enlarged view of an electrode terminal 50 according to Embodiment 7. As shown in Figure 24, the electrode terminal 50 omits the first protrusion 7 and the second protrusion 8 in Figure 2, and has a plurality of protrusions 51 formed integrally with the mold resin 2 between the side surface 13 of the opening 5 of the mold resin 2 and the contact portion 9 of the electrode terminal 50. In the configuration shown in Embodiment 7, those having the same reference numerals as in Embodiments 1 to 6 denote the same configurations, and thus the description thereof is omitted.

[0055] As shown in Figure 24, by providing the positioning accuracy when joining the electrode terminal 50 to the electrode 3 in the mold resin 2, the same positioning accuracy as when the electrode terminal 50 is provided with protrusions can be ensured. Also, an electrode terminal having no protrusions can be used. The distance between the opening 5 of the protrusion 51 and the terminal electrode 50 can be, for example, 10 μm.

[0056] Embodiment 8. FIG. 25 is a diagram showing a semiconductor device according to Embodiment 8. As shown in FIG. 25, it shows a configuration when a plurality of transfer molded power modules as semiconductor devices are connected and used. In addition, in the configuration shown in Embodiment 8, those having the same reference numerals as in Embodiments 1 to 7 indicate the same configuration, so the description thereof is omitted.

[0057] A plurality of semiconductor devices 1 are electrically connected to each other by connection electrode terminals 52 to which the open ends of the electrode terminals are respectively connected. The connection electrode terminal 52 has a screw tightening hole 10 and is electrically connected to the upper system. By configuring in this way, the capacity of the transfer molded power module can be increased. In FIG. 25, an example in which one of the three semiconductor devices 1 is connected in parallel is shown, but the present invention is not limited to this, and three or more semiconductor devices may be connected in parallel.

[0058] In Embodiments 1 to 8, an example in which the semiconductor device is a transfer molded module has been described, but the present invention is not limited to this, and for example, it is also applicable to a case type module structure.

[0059] Embodiment 9. This embodiment applies the semiconductor device according to Embodiments 1 to 8 described above to a power conversion device. Although the present invention is not limited to a specific power conversion device, hereinafter, as Embodiment 9, a case where the present invention is applied to a three-phase inverter will be described.

[0060] FIG. 26 is a block diagram showing the configuration of a power conversion system to which the power conversion device according to Embodiment 9 is applied.

[0061] The power conversion system shown in FIG. 26 includes a power source 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source that supplies DC power to the power conversion device 200. The power source 100 can be configured in various ways. For example, it can be composed of a DC system, a solar cell, a storage battery, or it can be composed of a rectifier circuit or an AC / DC converter connected to an AC system. Alternatively, the power source 100 may be composed of a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

[0062] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300. It converts the DC power supplied from the power source 100 into AC power and supplies the AC power to the load 300. As shown in FIG. 26, the power conversion device 200 includes a main conversion circuit 201 that converts and outputs DC power into AC power, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0063] The load 300 is a three-phase motor driven by the AC power supplied from the power conversion device 200. Note that the load 300 is not limited to a specific application and is a motor mounted on various electrical devices. For example, it is used as a motor for hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioning equipment.

[0064] Details of the power conversion device 200 will be described below. The main conversion circuit 201 includes switching elements and freewheeling diodes (not shown). By switching the switching elements, the DC power supplied from the power source 100 is converted into AC power and supplied to the load 300. There are various specific circuit configurations for the main conversion circuit 201. The main conversion circuit 201 according to the present embodiment is a two-level three-phase full-bridge circuit and can be composed of six switching elements and six freewheeling diodes connected in anti-parallel to each of the switching elements.

[0065] Each switching element and each freewheeling diode of the main conversion circuit 201 are constituted by a semiconductor device 202 corresponding to any one of the above-described Embodiments 1 to 8. The six switching elements are connected in series in pairs of two switching elements to form upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full-bridge circuit. Then, the output terminals of each upper and lower arm, that is, the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0066] Further, the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element, but the drive circuit may be incorporated in the semiconductor device 202, or may be configured to include a drive circuit separately from the semiconductor device 202. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201 and supplies it to the control electrode of the switching element of the main conversion circuit 201.

[0067] Specifically, in accordance with a control signal from a control circuit 203 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of the respective switching elements. When maintaining the switching element in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when maintaining the switching element in the off state, the drive signal is a voltage signal (off signal) equal to or lower than the threshold voltage of the switching element.

[0068] The control circuit 203 controls the switching elements of the main conversion circuit 201 so that a desired power is supplied to the load 300. Specifically, based on the power to be supplied to the load 300, the time (on time) during which each switching element of the main conversion circuit 201 should be in the on state is calculated.

[0069] For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Then, a control command (control signal) is output to the drive circuit included in the main conversion circuit 201 so that an on-signal is output to the switching element that should be in the on-state at each time point, and an off-signal is output to the switching element that should be in the off-state. The drive circuit outputs an on-signal or an off-signal to the control electrode of each switching element as a drive signal according to this control signal.

[0070] In the power conversion device according to the present embodiment, since the semiconductor devices according to Embodiments 1 to 8 are applied as the switching element and the freewheeling diode of the main conversion circuit 201, even if the electrode position of the module changes, it is possible to avoid the occurrence of costs and the like associated with the change.

[0071] In the present embodiment, an example of applying the present invention to a two-level three-phase inverter has been described. However, the present invention is not limited to this, and can be applied to various power conversion devices. In the present embodiment, a two-level power conversion device is used, but a three-level or multi-level power conversion device may also be used. When supplying power to a single-phase load, the present invention may be applied to a single-phase inverter. Further, when supplying power to a DC load or the like, the present invention can also be applied to a DC / DC converter or an AC / DC converter.

[0072] Further, the power conversion device to which the present invention is applied is not limited to the case where the above-described load is an electric motor. For example, it can also be used as a power supply device for a discharge processing machine, a laser processing machine, an induction heating cooker, or a contactless power feeding system. Furthermore, it can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

[0073] In the figures described above, those with the same reference numerals indicate the same or corresponding configurations, which is common throughout the entire text of the specification. Also, the present disclosure can freely combine the disclosed content within the scope of the disclosure, and can be appropriately modified or omitted. Further, although the embodiments of the present disclosure have been described as above, the present disclosure is not limited to these embodiments.

Explanation of Reference Numerals

[0074] Semiconductor device 1, Mold resin 2, Electrode 3, Electrode terminal 4, Opening 5, Bottom surface 6, First protrusion 7, Second protrusion 8, Contact portion 9, Screw tightening hole 10, Contact end portion 11, Open end portion 12, Side surface of the opening 13, Electrode terminal 14, Bent portion 15, Through hole 16, Adhesive 17, Sealing agent 20, Electrode terminal, Third protrusion 22, Recess 23, Terminal electrode 26, Opening 28, Straight portion 29, Tapered portion 30, Bottom portion 31, Electrode terminal 32 33, Step portion 34, Electrode terminal 35, Protrusion 36, Step-shaped protrusion 37, Electrode terminal 38 39, Through holes 40 41, Through protrusions 42, Through hole 43, Through protrusion 44, Electrode terminals 47 48 50, Connecting electrode terminal 52, Power source 100, Power conversion device 200, Main conversion circuit 201, Semiconductor device 202, Control circuit 203, Load 300

Claims

1. A semiconductor chip; a molding resin that encapsulates the semiconductor chip; an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the molding resin; an electrode terminal having a contact portion covering the electrode and electrically contacting the electrode, the electrode terminal having a contact end portion at which the contact portion is located and an open end portion that is an end portion different from the contact end portion; Equipped with The molding resin has a plurality of protrusions between a side surface of the opening and the contact portion of the electrode terminal.

2. The opening is a straight portion having a uniform cross-sectional area extending from a bottom of the opening toward an outer periphery of the molding resin; a tapered portion formed in a tapered shape such that a cross-sectional area increases from the straight portion toward an outer periphery of the molding resin; The semiconductor device according to claim 1 ,

3. The semiconductor device according to claim 1 , wherein the electrode terminal has a through hole in the contact portion.

4. The semiconductor device according to claim 1 , wherein the electrode terminal has a through hole on the side of the open end.

5. 2. The semiconductor device according to claim 1, wherein the electrode terminal has a bent portion bent on the side of the open end, the open end being located on the upper surface or the lower surface of the contact portion.

6. The semiconductor device according to claim 1 , wherein the cross section of the contact portion in the width direction of the electrode terminal has a convex warp shape toward the electrode.

7. The semiconductor device according to claim 6 , further comprising a step portion between each end in a width direction of the contact portion of the electrode terminal and the electrode.

8. The semiconductor device according to claim 1 , wherein the electrode terminal is curved upward or downward in an extension direction of the electrode terminal.

9. 2. The semiconductor device according to claim 1, wherein the opening, the electrode and the contact portion of the electrode terminal are sealed with a sealant.

10. The electrode has a first through hole, the electrode terminal has a second through hole in the contact portion that communicates with the first through hole, The semiconductor device according to claim 1 , wherein the molding resin further includes a through-protrusion that passes through the first through-hole and the second through-hole.

11. the electrode terminal has a protrusion between the contact portion and the open end, The semiconductor device according to claim 1 , wherein the molding resin has a stepped protrusion that engages with the protruding portion.

12. 2. The semiconductor device according to claim 1, wherein the electrode terminal is joined to the electrode by any one of US bonding, welding, and a bonding agent.

13. 10. The semiconductor device according to claim 1, wherein the semiconductor device is a transfer mold type module.

14. 2. A semiconductor device in which the semiconductor devices according to claim 1 are connected in parallel by connecting electrode terminals to which the open ends of the electrode terminals are respectively connected.

15. a main conversion circuit having the semiconductor device according to claim 1, which converts input power and outputs the converted power; a drive circuit that outputs a drive signal for driving the semiconductor device to the semiconductor device; a control circuit that outputs a control signal to the drive circuit to control the drive circuit; A power conversion device comprising:

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