Magnetic sensor and current sensor

Abstract

To provide a current sensor having multiple linearity with respect to the current being measured.SOLUTION: A magnetic sensor 60 comprises: a substrate 61 which is disposed on a conductor 24, and on which are arranged multiple blocks including first blocks 62a, 63a and second blocks 62b, 63b that are located close to and away from the center of the conductor, respectively; and multiple magnetoresistive elements 51 which are disposed on the substrate, and some of which are arranged inside the first blocks and some other of which are arranged inside the second blocks. The first and second blocks respectively include first sub-blocks 62a1, 63a1 and 62b1, 63b1 where magnetoresistive elements 51 having mutually the same direction of magnetization are disposed. The magnetoresistive elements in the first sub-blocks 62a1, 63a1 and 62b1, 63b1 of the first and second blocks 62a, 63a and 62b, 63b are connected in series to form a resistor side R1.SELECTED DRAWING: Figure 2A

Description

Technical Field

[0001] The present invention relates to a magnetic sensor and a current sensor.

Background Art

[0002] By using a dual-linear (two-linear) current sensor having two linear regions with different sensitivities, for example, during normal times, the current can be measured with high resolution within the detection limit range, and during a fault, the current can be measured with low resolution in a range exceeding the detection limit. In Patent Documents 1 and 2, a dual-linear current sensor is configured by making the amplification factor of an amplifier variable based on the output voltage of a current detector. However, since an amplifier is required, the chip area for forming the sensor increases. Further, in Patent Document 3, a dual-linear current sensor is configured by connecting in series a magnetoresistive element that is highly sensitive and magnetically saturates and a magnetoresistive element that is less sensitive and does not magnetically saturate. However, the process for forming two types of magnetoresistive elements having different structures on the same chip becomes complicated. Patent Document 1: Japanese Patent Application Laid-Open No. 2010-197065 Patent Document 2: U.S. Patent No. 9,523,742 Patent Document 3: U.S. Patent Application Publication No. 2019 / 279804

Summary of the Invention

Means for Solving the Problems

[0003] In a first aspect of the present invention, there is provided a substrate disposed on a conductor, on one surface of which a plurality of blocks including a first block and a second block are arranged relatively to each other and located near and far from the center of the conductor in a plan view, respectively; the substrate; and a plurality of magnetoresistive elements disposed on the substrate, a part of the plurality of magnetoresistive elements being disposed in the first block and another part being disposed in the second block. Each of the first block and the second block includes a first sub-block in which magnetoresistive elements having a magnetization direction in the same direction as each other are disposed, and the magnetoresistive elements in the first sub-block of the first block and the magnetoresistive elements in the first sub-block of the second block are connected in series to form a first resistance side, thereby providing a magnetic sensor.

[0004] In a second aspect of the present invention, there is provided a current sensor including the conductor, the magnetic sensor according to the first aspect, and a package for sealing the conductor and the magnetic sensor.

[0005] Note that the above summary of the invention does not list all the features of the present invention. Also, sub-combinations of these feature groups can also be inventions.

Brief Description of the Drawings

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MODE FOR CARRYING OUT THE INVENTION

[0007] Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the claims. Also, not all combinations of the features described in the embodiments are essential for the solution means of the invention.

[0008] Figures 1A and 1B show, respectively, in top view and side view, the internal configuration of the current sensor 110 according to this embodiment through the package 9. Here, FIG. 1B shows the cross-sectional structure of the current sensor 110 with respect to the reference line BB in FIG. 1A. In FIG. 1A, the vertical direction is the X-axis direction, the left-right direction in FIGS. 1A and 1B is the Y-axis direction, and the vertical direction in FIG. 1B is the Z-axis direction. The current sensor 110 is a sensor that measures the amount of current by detecting the magnetic field generated around a conductor 24 through which the current to be measured flows, using a magnetic sensor 60. In particular, a current sensor that exhibits double or multiple linearity according to the current to be measured, and a magnetic sensor for use in such a current sensor are provided. The current sensor 110 includes a package 9, a plurality of device terminals 17, a conductor 24, and a magnetic sensor 60.

[0009] The package 9 is a member that seals and protects each component of the current sensor 110 (particularly, the conductor 24 and the magnetic sensor 60) inside, excluding the terminal portions of the plurality of device terminals 17 and the conductor 24. The package 9 is formed into a flat rectangular parallelepiped, for example, by molding using a sealing resin with excellent insulation properties such as epoxy.

[0010] The plurality of device terminals 17 (an example of a plurality of output terminals) are each connected to an electrode pad (not shown) of the magnetic sensor 60 and are secondary conductors for outputting the detection result of the magnetic field intensity output from the magnetic sensor 60 to an external device. In this example, as an example, eight device terminals 17 are arranged at equal intervals on the left side of the package 9 with their lengths in the Y-axis direction. The device terminals 17 are formed into a rectangular plate shape using metal, and their ends are bent downward by bending, and further the tips are bent horizontally to form terminal portions 17a at their ends, respectively.

[0011] The conductor 24 is a primary conductor that forms a current path through which the current to be measured flows. In this embodiment, the conductor 24 has two arms 24c that are symmetric or substantially symmetric with respect to the reference line L (see FIG. 2A) 1 , 24c 2The conductor 24 has a U-shape or an approximate U-shape (or may be a C-shape, a π-shape, or a V-shape) including the above, and is arranged so as to run from a current terminal 24a provided on one side of the right side of the package 9 (i.e., the upper side in FIG. 1A) through the inside of the package 9, return to the right side, and reach a current terminal 24e provided on the other side of the right side (i.e., the lower side in FIG. 1A). The conductor 24 is formed using a conductive metal. The conductor 24 includes current terminals (also simply referred to as terminal portions) 24a and 24e, body portions 24b and 24d, and a curved portion 24c.

[0012] The terminals 24a and 24e protrude from the right side of the package 9, and are formed into terminals for inputting a current by bending the ends downward and further bending the tips horizontally.

[0013] The body portions 24b and 24d are portions that connect the terminal portions 24a and 24e to the curved portion 24c. As an example, the body portions 24b and 24d are formed in a rectangular shape, and each of the body portions 24b and 24d has two terminal portions 24a and 24e connected to the right side at a distance and an arm 24c of the curved portion 24c connected to the left side. 1 ,24c 2 Connect the

[0014] The bending portion 24c has two arms 24c 1 ,24c 2 and these two arms 24c 1 ,24c 2 24c joint connecting 3 It has two arms 24c 1 ,24c 2 The arm 24c has a shape that is wider in the X-axis direction and extends in the Y-axis direction. 1 ,24c 2 The joint is 24c 3 The width of each of the body portions 24b and 24d is smaller than the width of the body portion 24c. 3 is curved in a substantially circular arc shape, and has two arms 24c at both ends. 1 ,24c 2 are connected to each other at a distance in the X-axis direction. 3 The bending portion 24c may be bent into a U-shape.1 , 24c 2 The current to be measured is input to one of the arms, and the current to be measured is output from the other arm via the connecting part 24c. 3

[0015] The conductor 24 arranges the two arms 24c included in the bent part 24c 1 , 24c 2 at the center of the package 9, projects the terminal parts 24a and 24e from the right side of the package 9, and seals them in the package 9.

[0016] Fig. 2A shows an example of the arrangement and substrate layout of a full-bridge type magnetic sensor 60. The magnetic sensor 60 is a sensor that detects a magnetic field generated around the conductor 24 by a current to be measured that is passed through the conductor 24. The magnetic sensor 60 is configured to detect, as an example, a magnetic field in the X-axis direction (an example of a horizontal magnetic field) generated on the upper surface of the conductor 24, and includes a substrate 61, a plurality of magnetoresistive elements 51, and a plurality of electrode pads (not shown).

[0017] The substrate 61 is a plate-like member that supports two magnetoelectric conversion parts 62 and 63. In this example, the substrate 61 is installed so as to be bridged between two arms 24c 1 , 24c 2 on the conductor 24. The substrate 61 is formed using, for example, silicon (Si), and a plurality of blocks arranged in a direction intersecting the current-carrying direction of the conductor 24 (that is, the X-axis direction) are arranged on one surface thereof. In this example, the plurality of blocks are, relative to each other, the first blocks 62a and 63a located at the center line of each of the arms 24c 1 , 24c 2 of the conductor 24 or in the vicinity thereof (that is, a place where the magnetic field strength is relatively large), and the second blocks 62b and 63b located remotely from the arms 24c 1 , 24c 2 (that is, a place where the magnetic field strength is relatively small, and in this example, between the arms 24c 1 , 24c 2 ). The first blocks 62a and 63a and the second blocks 62b and 63b are the two arms 24c 1 , 24c 2 ​One is disposed symmetrically with respect to the reference line L on each of the upper or arm sides. Note that the plurality of blocks are not limited to two and may include three or more blocks.

[0018] Each of the first blocks 62a and 63a and the second blocks 62b and 63b includes one or more (four in this example) sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,63a 1 ~63a 4 ,63b 1 ~63b 4 Furthermore, on one surface of the substrate 61, a plurality of blocks 62a, 62b, 63a, 63b or a plurality of sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,63a 1 ~63a 4 ,63b 1 ~63b 4 are electrically connected by a plurality of laid wires.

[0019] The plurality of magnetoresistive elements 51 are elements whose resistance values vary by the application of a magnetic field, and are respectively disposed on one side and the other side in the X-axis direction on the substrate 61 to form two magnetoelectric conversion units 62 and 63. The magnetoelectric conversion unit 62 is formed by assembling a part of the plurality of magnetoresistive elements 51 (that is, the magnetoresistive elements 51 disposed on the right side in FIG. 2A) in a Wheatstone bridge shape or a half-bridge shape. Here, a further part of a part of the magnetoresistive elements 51 is disposed in the first block 62a, and another part is disposed in the second block 62b. The magnetoelectric conversion unit 63 is formed by assembling another part of the plurality of magnetoresistive elements 51 (that is, the magnetoresistive elements 51 disposed on the left side in FIG. 2A) in a Wheatstone bridge shape (or a half-bridge shape). Here, a further part of another part of the magnetoresistive elements 51 is disposed in the first block 63a, and yet another part is disposed in the second block 63b. Note that, as the magnetoresistive element, for example, a tunnel magnetoresistive element (TMR) or a giant magnetoresistive element (GMR) can be adopted.

[0020] Figure 2B shows the configuration of the magnetoresistive element 51 in a side view. The magnetoresistive element 51 is an element whose resistance value varies upon application of a magnetic field, and includes a fixed layer 51o, a tunnel layer 51p, a free layer 51q, and a cap layer 51r. The fixed layer 51o is a magnetic film with a fixed magnetization direction. The fixed layer 51o is magnetized such that its magnetization direction is along a uniaxial direction within the plane (also referred to as the sensitive magnetic plane) in which the magnetic film extends or in a direction perpendicular to the sensitive magnetic plane. The magnetization direction of the fixed layer 51o determines the magnetic field detection direction of the magnetoresistive element 51. The tunnel layer 51p is a nonmagnetic insulating film having a thickness of, for example, several nanometers. The free layer 51q is a magnetic film whose magnetization direction changes due to an external magnetic field. Note that the material of the magnetic film is an alloy containing at least one of Co, Fe, B, Ni, and Si, and more specifically, cobalt iron (CoFe), cobalt iron boron (CoFeB), or nickel iron (NiFe) can be used. The fixed layer 51o, the tunnel layer 51p, and the free layer 51q are laminated to form a laminate. Here, current flows through the element in the lamination direction as electrons tunnel through the tunnel layer 51p and move from the fixed layer 51o to the free layer 51q or from the free layer 51q to the fixed layer 51o. The cap layer 51r is a member that covers the laminate from above, and an alloy containing at least one of Ta, Ru, Pt, Mn, Ir, Mg, Cu, Fe, Ni, Cr, Fe, Co, and Al can be used, and more specifically, platinum manganese (PtMn) or iridium manganese (IrMn) can be used. Note that the periphery of the magnetoresistive element 51 is covered with an insulator (not shown), such as silicon dioxide (SiO 2 ) or silicon nitride (SiN).

[0021] When an external magnetic field is applied to the magnetoresistive element 51, due to the magnetoresistive effect (MR effect), the direction of magnetization of the free layer 51q changes according to the direction and intensity of the magnetic field. That is, the direction of magnetization of the free layer 51q changes with respect to the direction of magnetization of the fixed layer 51o, and thereby the resistance value (also called magnetoresistance) between the fixed layer 51o and the free layer 51q fluctuates. In particular, when the direction of magnetization of the free layer 51q is the same as the direction of magnetization of the fixed layer 51o (the magnetizations of the two layers are parallel), the resistance value is small, and conversely (the magnetizations of the two layers are antiparallel), the resistance value is large.

[0022] Note that by connecting a plurality of magnetoresistive elements 51 in series, the DC withstand voltage can be improved. Here, by connecting the electrode piece 52 to the cap layer 51r via the electrode bar 51s and connecting the electrode piece 53 to the lower surface of the fixed layer 51o, the magnetoresistive element 51 can be connected to another magnetoresistive element 51 via these electrode pieces 52 and 53. That is, a plurality of magnetoresistive elements 51 can be arranged in a plane. Also, by connecting the cap layer 51r of the magnetoresistive element 51 to the fixed layer 51o of another magnetoresistive element 51 via the electrode bar 51s, a plurality of magnetoresistive elements 51 can be arranged three-dimensionally. In this example, in particular, a plurality of sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,63a 1 ~63a 4 ,63b 1 ~63b 4 For each, a plurality of magnetoresistive elements 51 arranged therein are connected in series using the electrode pieces 52 and 53 to form a part of the resistance side.

[0023] Fig. 3 shows the circuit configuration of the full-bridge type magnetic sensor 60 (two magnetoelectric conversion units 62 and 63) and the magnetic field detection directions (also called magnetic sensitive directions) of the resistance sides R1 to R8 (the magnetoresistive elements 51 included in each of them). The two magnetoelectric conversion units 62 and 63 are connected in parallel between the drive terminal VDD and the ground terminal GND in the magnetic sensor 60. As described above, the first blocks 62a, 63a and the second blocks 62b, 63b arranged on the substrate 61 each include four sub-blocks 62a 1~62a 4 ,62b 1 ~62b 4 ,63a 1 ~63a 4 ,63b 1 ~63b 4 including

[0024] In the magnetoelectric conversion unit 62 (similarly in the magnetoelectric conversion unit 63), the first sub-blocks 62a (63a) included in the first block 62a (63a) and the second block 62b (63b) respectively 1 ,62b 1 (63a 1 ,63b 1 ) there are magnetoresistive elements 51 having magnetosensing directions in the same direction as each other as indicated by the black arrows (white arrows). The magnetoresistive elements 51 in the first sub-block 62a 1 (63a 1 ) of the first block 62a and the magnetoresistive elements 51 in the first sub-block 62b 1 (63b 1 ) of the second block 62b are connected in series to form a resistance side R1 (R5).

[0025] The second sub-blocks 62a 2 ,62b 2 (63a 2 ,63b 2 ) included in the first block 62a (63a) and the second block 62b (63b) respectively have magnetosensing directions in the same direction as each other as indicated by the white arrows (black arrows) and are opposite to the magnetosensing directions of the magnetoresistive elements 51 in the first sub-block 62a 1 ,62b 1 (63a 1 ,63b 1 ). The magnetoresistive elements 51 in the second sub-block 62a 2 (63a 2 ) of the first block 62a and the magnetoresistive elements 51 in the second sub-block 62b 2 (63b 2 ) of the second block 62b are connected in series to form a resistance side R2 (R6).

[0026] The third sub-blocks 62a 3 , 62b 3 (63a 3 , 63b 3 ) each contain magnetoresistive elements 51 having a magnetosensitive direction that is the same as each other and in the same direction as the magnetosensitive direction of the magnetoresistive elements 51 in the first sub-blocks 62a 1 , 62b 1 (63a 1 , 63b 1 ). The magnetoresistive elements 51 in the third sub-block 62a 3 (63a 3 ) of the first block 62a (63a) and the magnetoresistive elements 51 in the third sub-block 62b 3 (63b 3 ) of the second block 62b (63b) are connected in series to form a resistance side R3 (R7).

[0027] The fourth sub-blocks 62a 4 , 62b 4 (63a 4 , 63b 4 ) each contain magnetoresistive elements 51 having a magnetosensitive direction that is the same as each other and opposite to the magnetosensitive direction of the magnetoresistive elements 51 in the first sub-blocks 62a 1 , 62b 1 (63a 1 , 63b 1 ), that is, the same magnetosensitive direction as the magnetoresistive elements 51 in the second sub-blocks 62a 2 , 62b 2 (63a 2 , 63b 2 ). The magnetoresistive elements 51 in the fourth sub-block 62a 4 (63a 4 ) of the first block 62a (63a) and the magnetoresistive elements 51 in the fourth sub-block 62b 4 (63b 4) The magnetoresistive element 51 within is connected in series to form a resistive side R4 (R8).

[0028] The resistive sides R1, R2 (R5, R6) are connected in series with each other to form an output terminal Np21 (Np31) therebetween, and the resistive sides R3, R4 (R7, R8) are connected in series with each other to form an output terminal Np22 (Np32) therebetween and are connected in parallel to the resistive sides R1, R2 (R5, R6). A Wheatstone bridge circuit is formed by the resistive sides R1 to R4 (R5 to R8).

[0029] In the current sensor 110 according to this embodiment, the magneto-sensitive directions of the resistive sides R1 to R4 (R5 to R8) are in a uniaxial direction parallel to the upper surface of the conductor 24 (the X-axis direction in FIG. 1A). The magneto-sensitive directions of the magnetoresistive elements 51 forming each of the resistive sides R1, R3 (R6, R8) are equal to each other (indicated by the black-filled arrows in FIG. 3), and in this example, they are in the +X direction (or -X direction) in FIG. 1A. The magneto-sensitive directions of the magnetoresistive elements 51 forming each of the resistive sides R2, R4 (R5, R7) are also equal to each other (indicated by the hollow arrows in FIG. 3), and in this example, they are in the -X direction (or +X direction) in FIG. 1A. The magnetic field detection directions of the resistive sides R1, R3 (R6, R8) are opposite to the magneto-sensitive directions of the resistive sides R2, R4 (R5, R7).

[0030] The magnetoelectric conversion unit 62 (63) has at least a part disposed on the arm 24c of the conductor 24 1 (24c 2 ) When a current to be measured flows through the conductor 24 and a magnetic field is generated around the conductor 24, the arm 24c of the conductor 24 1 (24c 2) A magnetic field in the X-axis direction is applied to the magnetoresistive elements 51 included in the resistance sides R1 to R4 (R5 to R8) of the magnetoelectric conversion units 62 (63) arranged thereon, and the respective resistance values (also referred to as magnetoresistance) fluctuate. For example, the resistance values of the resistance sides R1 and R3 (R5 and R7) increase (or decrease), and the resistance values of the resistance sides R2 and R4 (R6 and R8) decrease (or increase), thereby breaking the resistance balance of the resistance sides R1 to R4 (R5 to R8). Here, a drive voltage is input to the drive terminal VDD with respect to the ground terminal GND, and the magnetic field strength can be detected by detecting the differential voltage output between the output terminals Np21 and Np22 (Np31 and Np32). Thereby, the arm 24c 1 (24c 2 ) The horizontal magnetic field generated on the upper surface can be detected.

[0031] When a current to be measured flows through the conductor 24 and a magnetic field Bx parallel to the X-axis direction is generated above the conductor 24 (arm 24c 1 , 24c 2 ), the magnetoresistive elements 51 included in each of the magnetoelectric conversion units 62 and 63 linearly vary the magnetoresistance according to the intensity of the applied magnetic field Bx, and the intensity of the magnetic field Bx reaches the detection limit and magnetic saturation occurs (that is, the magnetoresistance becomes constant). Here, when each of the plurality of magnetoresistive elements 51 is formed in the same manner, they exhibit similar magnetic sensitivity characteristics. However, the intensity of the magnetic field Bx increases and decreases according to the relative position with respect to the conductor 24 (arm 24c 1 , 24c 2 ). For example, it exhibits a maximum at the center line or approximately the center line of each of the arms 24c 1 , 24c 2 and attenuates in the region between the arms 24c 1 , 24c 2 or the outer region. Therefore, by arranging the plurality of magnetoresistive elements 51 constituting the magnetoelectric conversion units 62 and 63 at different positions with respect to the conductor 24 (arm 24c 1 , 24c 2 ), a multi-linear sensor having a plurality of linearities with different sensitivities can be realized.

[0032] Fig. 4 shows the magnetoresistance change ΔR of the magnetoresistive element 51 and the entire sensor (magnetoelectric conversion unit 62) in the first block 62a and the second block 62b with respect to the current amount Iin of the conductor 24. Since the output voltage Vout of the magnetic sensor 60 (magnetoelectric conversion units 62, 63) is proportional to the magnetoresistance change ΔR, the linearity of the output voltage Vout with respect to the current amount Iin is equal to the linearity of the magnetoresistance change ΔR. Therefore, unless otherwise specified, the linearity of the magnetoresistance change ΔR will be referred to.

[0033] The first block 62a is the arm 24c on the substrate 61 1 at or near the center line (position x 1 ). Therefore, the magnetoresistive element 51 disposed therein has a strong sensitivity to the current amount Iin due to the application of a magnetic field Bx of substantially maximum intensity, and the magnetoresistance ΔR 62a increases, and magnetic saturation (ΔR s ) occurs at a current amount Iina or more. Note that the sensitivity varies according to the position x 1 of the first block 62a. On the other hand, the second block 62b is remote from the arm 24c 1 (in this example, at the position x 1 between the two arms 24c 2 ). Therefore, the magnetoresistive element 51 disposed therein has a weak sensitivity to the current amount Iin due to the application of a relatively weak magnetic field Bx, and the magnetoresistance ΔR 2 increases, and magnetic saturation (ΔR 62b ) occurs at a relatively large current amount Iinb or more. Note that the sensitivity varies according to the position x s of the second block 62b. 2 varies according to the position x.

[0034] The magnetoresistive element 51 in the first block 62a (sub-blocks 62a 1 ~62a 4 ) and the second block 62b (sub-blocks 62b 1 ~62b 4By connecting the magnetoresistive elements 51 within in series to form the resistance sides R1 to R4, the magnetoresistive change ΔR of each of the resistance sides R1 to R4 increases with a strong sensitivity (i.e., a large slope) in the range of the current amount Iina or less with respect to the measured current Iin, increases with a weak sensitivity (small slope) in the range of the current amount Iina to Iinb, and exhibits a double linearity of magnetic saturation in the range of the current amount Iinb or more. Here, the magnetoresistive element 51 in the first block 62a and the magnetoresistive element 51 in the second block 62b may have the same structure, can be formed by the same process, and since an amplifier for realizing a plurality of linearities is not required, the magnetic sensor 60 can be configured with a small chip area.

[0035] Note that since the structures and processes of the plurality of magnetoresistive elements 51 are the same, the magnetoresistive change ΔR of the magnetoresistive elements 51 and the magnetoelectric conversion unit 63 in the first block 63a and the second block 63b with respect to the energization amount of the conductor 24 is the same as the magnetoresistive change ΔR of the magnetoresistive elements 51 and the magnetoelectric conversion unit 62 in the first block 62a and the second block 62b.

[0036] Note that the two magnetoelectric conversion units 62 and 63 can be respectively arranged on one side and the other side in the X-axis direction symmetrically with respect to the reference line L (see FIG. 2A). Thereby, an external magnetic field can be canceled. Also, the drive terminals VDD, ground terminals GND, and output terminals Np21, Np22, Np31, Np32 of the two magnetoelectric conversion units 62 and 63 may be connected to a plurality of electrode pads on the substrate 61.

[0037] The plurality of electrode pads are arranged on the substrate 61 and are wired-connected to the drive terminals VDD and ground terminals GND of the two magnetoelectric conversion units 62 and 63, the two output terminals Np21 and Np22 of the magnetoelectric conversion unit 62, and the two output terminals Np31 and Np32 of the magnetoelectric conversion unit 63. They are pads for inputting a drive voltage to the drive terminal VDD from the outside and outputting a differential voltage to the outside from the output terminals Np21, Np22, Np31, Np32. The electrode pads are formed on the substrate 61 using a conductive metal such as gold, copper, or aluminum, and are arranged side by side in the X-axis direction, for example, on the +Y side (the left side in FIG. 1A).

[0038] The magnetic sensor 60 is disposed on the bent portion 24c of the conductor 24. Thereby, two magnetoelectric conversion portions 62, 63 are disposed on two arms 24c 1 , 24c 2 of the bent portion 24c, respectively, and a plurality of electrode pads on the substrate 61 connected to their drive terminals VDD, ground terminals GND, and output terminals Np21, Np22, Np31, Np32 are connected to the device terminal 17 by wire bonding. Thereby, a drive voltage can be applied to the two magnetoelectric conversion portions 62, 63 via the device terminal 17 and differential voltages can be output respectively.

[0039] FIG. 5A shows an example of the arrangement and substrate layout of a half-bridge type magnetic sensor 60h. The magnetic sensor 60h can be configured in the same manner as the magnetic sensor 60. However, the first blocks 62a, 63a and the second blocks 62b, 63b disposed on one surface of the substrate 61 each include two sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2 , 63a 1 , 63a 2 , 63b 1 , 63b 2 . Further, on one surface of the substrate 61, a plurality of wirings for electrically connecting the plurality of blocks 62a, 62b, 63a, 63b or a plurality of sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2 , 63a 1 , 63a 2 , 63b 1 , 63b 2 therein are laid.

[0040] Fig. 5B shows the circuit configuration of a half-bridge type magnetic sensor (two magnetoelectric conversion units 62, 63) and the magnetization directions of the magnetoresistive elements 51 included in each of the resistive sides R1, R2, R5, R6. The two magnetoelectric conversion units 62, 63 are connected in parallel between the drive terminal VDD and the ground terminal GND in the magnetic sensor 60. As described above, the first blocks 62a, 63a and the second blocks 62b, 63b arranged on the substrate 61 each include two sub-blocks 62a 1 ,62a 2 ,62b 1 ,62b 2 ,63a 1 ,63a 2 ,63b 1 ,63b 2 .

[0041] In the magnetoelectric conversion unit 62 (similarly in the magnetoelectric conversion unit 63), the first sub-blocks 62a 1 ,62b 1 (63a 1 ,63b 1 ) included in the first block 62a (63a) and the second block 62b (63b) are respectively provided with magnetoresistive elements 51 having magnetization directions in the same direction as each other as shown by the black arrows (white arrows). The magnetoresistive element 51 in the first sub-block 62a 1 (63a 1 ) in the first block 62a and the magnetoresistive element 51 in the first sub-block 62b 1 (63b 1 ) in the second block 62b are connected in series to form the resistive side R1 (R5).

[0042] The second sub-blocks 62a 2 ,62b 2 (63a 2 ,63b 2 ) included in the first block 62a (63a) and the second block 62b (63b) are respectively provided with magnetization directions in the same direction as each other as shown by the white arrows (black arrows) and are opposite to the first sub-block 62a 1 ,62b 1 (63a 1 ,63b 1A magnetoresistive element 51 having a magnetic sensing direction opposite to that of the magnetoresistive element 51 within 2 (63a 2 ) is disposed. The magnetoresistive element 51 within the second sub-block 62a (63a) of the first block 62a 2 (63b 2 ) and the magnetoresistive element 51 within the second sub-block 62b (63b) of the second block 62b are connected in series to form a resistance side R2 (R6).

[0043] The resistance sides R1, R2 (R5, R6) are connected in series with each other to form an output terminal Np2 (Np3) therebetween, and a half-bridge circuit is formed by the resistance sides R1, R2 (R5, R6).

[0044] In the magnetic sensor 60h according to this example, the magnetic sensing directions of the resistance sides R1, R2 (R5, R6) are in a uniaxial direction parallel to the upper surface of the conductor 24 (the X-axis direction in FIG. 1A). The magnetic sensing directions of the magnetoresistive elements 51 forming the resistance side R1 (R6) are equal to each other (indicated by solid black arrows in FIG. 5B), and in this example, they are in the +X direction (or -X direction) in FIG. 1A. The magnetic sensing directions of the magnetoresistive elements 51 forming the resistance sides R2 (R5) are also equal to each other (indicated by white arrows in FIG. 5B), and in this example, they are in the -X direction (or +X direction) in FIG. 1A. The magnetic field detection direction of the resistance side R1 (R6) is opposite to the magnetic sensing direction of the resistance side R2 (R5).

[0045] The magnetoelectric conversion unit 62 (63) has at least a part disposed on the arm 24c of the conductor 24 1 (24c 2 ). When a current to be measured flows through the conductor 24 and a magnetic field is generated around the conductor 24, the arm 24c of the conductor 24 1 (24c 2) A magnetic field in the X-axis direction is applied to the magnetoresistive elements 51 included in the resistance sides R1, R2 (R5, R6) of the magnetoelectric conversion units 62(63) disposed thereon, and the respective resistance values fluctuate. For example, the resistance value of the resistance side R1 (R5) increases (or decreases), and the resistance value of the resistance side R2 (R6) decreases (or increases), thereby breaking the resistance balance of the resistance sides R1, R2 (R5, R6). Here, by inputting a drive voltage to the drive terminal VDD with respect to the ground terminal GND and detecting the voltage output from the output terminal Np2 (Np3), the magnetic field strength can be detected. Thereby, the horizontal magnetic field generated on the upper surface of the arm 24c 1 (24c 2 ) can be detected.

[0046] Also in the magnetic sensor 60h, similar to the magnetic sensor 60, by arranging a plurality of magnetoresistive elements 51 constituting the magnetoelectric conversion units 62, 63 at different positions with respect to the conductor 24 (arm 24c 1 , 24c 2 ), a multi-linear sensor having a plurality of linearities with different sensitivities can be realized.

[0047] By selecting the position x 1 of the first block 62a (63a) and the position x 2 of the second block 62b (63b), the sensitivity (linearity) of the magnetoresistive elements 51 in each block with respect to the measured current Iin can be adjusted. By approaching the vicinity of the center line of the arm 24c 1 , 24c 2 where the magnetic field Bx of the maximum intensity is generated, the sensitivity can be increased, and by arranging it in the vicinity of the outer side of the arm 24c 1 , 24c 2 where the magnetic field Bx is relatively weak or in the inner or outer region of 24c 1 , 24c 2 , the sensitivity can be decreased.

[0048] Examples of the arrangements of the first blocks 62a and 63a and the second blocks 62b and 63b are shown in FIGS. 6A to 6D. In any of the examples, the first blocks 62a and 63a of the magnetoelectric conversion units 62 and 63 are arranged symmetrically with respect to the reference line L, and the second blocks 62b and 63b of the magnetoelectric conversion units 62 and 63 are also arranged symmetrically with respect to the reference line L.

[0049] In the example shown in FIG. 6A, in a plan view (i.e., a view in the Z-axis direction), at least a part of each of the first blocks 62a and 63a is located on the arms 24c 1 , 24c 2 of the conductor 24, and the second blocks 62b and 63b are located outside the arms 24c 1 , 24c 2 In this example, in particular, the first blocks 62a and 63a are each located on the center lines of the arms 24c 1 , 24c 2 , and the second blocks 62b and 63b are located between the arms 24c 1 , 24c 2 As shown by the dotted lines in the figure, the first blocks 62a and 63a may each be located on the inner or outer sides of the arms 24c 1 , 24c 2 . With such an arrangement, the magnetoresistive element 51 can be disposed within a small chip area.

[0050] In the example shown in FIG. 6B, in a plan view, the first blocks 62a and 63a are each located on the arms 24c 1 , 24c 2 of the conductor 24, and at least a part of each of the second blocks 62b and 63b is located on the arms 24c 1 , 24c 2 and at least a part is located outside the arms 24c 1 , 24c 2 In this example, in particular, the first blocks 62a and 63a are each located on the center line or in the vicinity thereof of the arms 24c 1 , 24c 2 , and a part of the second blocks 62b and 63b is each located on the arms 24c 1 , 24c 2It is located on the inner side thereof. With such an arrangement, the magnetoresistive element 51 can be disposed within a small chip area.

[0051] In the example shown in FIG. 6C, in a plan view, the first blocks 62a and 63a are respectively located on the arms 24c 1 , 24c 2 of the conductor 24, and at least a part of the second blocks 62b and 63b are respectively located on the arms 24c 1 , 24c 2 of the conductor 24, and at least a part of the second blocks 62b and 63b are respectively located outside the arms 24c 1 , 24c 2 of the conductor 24. In this example, in particular, the first blocks 62a and 63a are respectively located on the center line of the arms 24c 1 , 24c 2 or in the vicinity thereof, and a part of the second blocks 62b and 63b are respectively located on the outer sides of the arms 24c 1 , 24c 2 of the conductor 24.

[0052] In the example shown in FIG. 6D, in a plan view, at least a part of the first blocks 62a and 63a are respectively located on the arms 24c 1 , 24c 2 of the conductor 24, and the second blocks 62b and 63b are located outside the arms 24c 1 , 24c 2 of the conductor 24. In this example, in particular, the first blocks 62a and 63a are respectively located on the center line of the arms 24c 1 , 24c 2 of the conductor 24, and the second blocks 62b and 63b are located outside the arms 24c 1 , 24c 2 of the conductor 24. As shown by the dotted lines in the figure, the first blocks 62a and 63a may be respectively located on the inner side or the outer side of the arms 24c 1 , 24c 2 of the conductor 24.

[0053] The plurality of blocks may further include at least one extension block disposed at a position on one surface of the substrate 61 and separated from the first blocks 62a, 63a and the second blocks 62b, 63b. In such a case, still another part of the plurality of magnetoresistive elements 51 is disposed within the at least one extension block.

[0054] FIG. 7A shows the block arrangement of the magnetoresistive elements 51 that constitute the four-linear current sensor 110 whose sensitivity decreases as the energization amount increases, using the full-bridge type magnetic sensor 60. In the magnetic sensor 60 of this example, the plurality of blocks disposed on the substrate 61 (omitted in FIG. 7A) include, in addition to the first blocks 62a and the second blocks 62b shown in FIG. 2A, two further extension blocks, namely the third block 62c and the fourth block 62d. However, the four blocks in which the magnetoresistive elements 51 forming each of the magnetoelectric conversion units 62, 63 are disposed are arranged symmetrically with respect to the reference line L. Therefore, only the four blocks 62a to 62d in the magnetoelectric conversion unit 62 are illustrated, and the four blocks in the magnetoelectric conversion unit 63 are omitted.

[0055] Each of the third block 62c and the fourth block 62d includes one or a plurality (four in this example) of sub-blocks 62c 1 ~62c 4 ,62d 1 ~62d 4 in the same manner as the first block 62a and the second block 62b. Further, on one surface of the substrate 61, a plurality of blocks 62a, 62b, 62c, 62d or a plurality of sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,62c 1 ~62c 4 ,62d 1 ~62d 4 inside them are electrically connected by a plurality of wirings (not shown). Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also include four sub-blocks each, and a plurality of wirings for electrically connecting them are provided.

[0056] The plurality of magnetoresistive elements 51 are connected in series using electrode pieces 52 and 53 for each of the plurality of sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,62c 1 ~62c 4 ,62d 1 ~62d 4 to form part of the resistance sides R1 to R4.

[0057] In the magnetoelectric conversion unit 62, the first sub-blocks 62a 1 ,62b 1 contained in the first block 62a and the second block 62b respectively are provided with magnetoresistive elements 51 having magnetosensitive directions in the same direction as each other. The first sub-blocks 62c 1 ,62d 1 contained in the third block 62c and the fourth block 62d also have magnetosensitive directions in the same direction as each other and are provided with magnetoresistive elements 51 having magnetosensitive directions in the same direction as the magnetoresistive elements 51 in the first sub-block 62a 1 in the first block 62a and the magnetoresistive elements 51 in the first sub-block 62b 1 in the second block 62b. The magnetoresistive elements 51 in the first sub-block 62c 1 in the third block 62c and the magnetoresistive elements 51 in the first sub-block 62d 1 in the fourth block 62d are connected in series with the magnetoresistive elements 51 in the first sub-block 62a 1 in the first block 62a and the magnetoresistive elements 51 in the first sub-block 62b 1 in the second block 62b to form the resistance side R1.

[0058] The second sub-blocks 62a 2 ~62d 2 contained in the first to fourth blocks 62a to 62d respectively further have magnetosensitive directions in the same direction as each other and the respective first sub-blocks 62a 1 ~62d 1A magnetoresistive element 51 having a magnetization direction opposite to that of the magnetoresistive element 51 inside is disposed. The magnetoresistive elements 51 in each of the second sub-blocks 62a 2 ~62d 2 inside are connected in series to form a resistance side R2.

[0059] In each of the third sub-blocks 62a 3 ~62d 3 included in the first to fourth blocks 62a to 62d, there are further disposed magnetoresistive elements 51 having the same magnetization direction as each other and the same magnetization direction as the magnetoresistive element 51 in each of the first sub-blocks 62a 1 ~62d 1 inside. The magnetoresistive elements 51 in each of the third sub-blocks 62a 3 ~62d 3 inside are connected in series to form a resistance side R3.

[0060] In each of the fourth sub-blocks 62a 4 ~62d 4 included in the first to fourth blocks 62a to 62d, there are further disposed magnetoresistive elements 51 having the same magnetization direction as each other and a magnetization direction opposite to that of the magnetoresistive element 51 in each of the first sub-blocks 62a 1 ~62d 1 inside. The magnetoresistive elements 51 in each of the fourth sub-blocks 62a 4 ~62d 4 inside are connected in series to form a resistance side R4.

[0061] The resistive sides R1 and R2 are connected in series to form an output terminal Np21 therebetween, and the resistive sides R3 and R4 are connected in series with each other to form an output terminal Np22 therebetween and are connected in parallel to the resistive sides R1 and R2. The resistive sides R1 to R4 form a Wheatstone bridge circuit (see FIG. 3). That is, the magnetic sensor 60 in this example used for the quadrilinear current sensor 110 has four sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,62c 1 ~62c 4 ,62d 1 ~62d 4 in which a magnetoresistive element 51 is disposed in each of the blocks 62a

[0062] FIG. 7B shows the block arrangement of the magnetoresistive elements 51 that constitute the quadrilinear current sensor 110 whose sensitivity decreases as the energization amount increases, using the half-bridge type magnetic sensor 60h. In the magnetic sensor 60h of this example, the plurality of blocks arranged on the substrate 61 (omitted in FIG. 7B) include, in addition to the first block 62a and the second block 62b shown in FIG. 5A, two further extended blocks, that is, the third block 62c and the fourth block 62d. However, the four blocks in which the magnetoresistive elements 51 forming each of the magnetoelectric conversion units 62 and 63 are disposed are arranged symmetrically with respect to the reference line L. Therefore, only the four blocks 62a to 62d in the magnetoelectric conversion unit 62 are shown, and the four blocks in the magnetoelectric conversion unit 63 are omitted.

[0063] Each of the third block 62c and the fourth block 62d includes two sub-blocks 62c 1 ,62c 2 ,62d 1 ,62d 2 in the same manner as the first block 62a and the second block 62b. Further, on one surface of the substrate 61, a plurality of blocks 62a, 62b, 62c, 62d or a plurality of sub-blocks 62a 1 ,62a 2 ,62b 1 ,62b 2,62c 1 ,62c 2 ,62d 1 ,62d 2 A plurality of wirings (not shown) for making electrical connections are laid. Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also each include two sub-blocks, and a plurality of wirings for making electrical connections between them are provided.

[0064] The plurality of magnetoresistive elements 51 are connected in series using the electrode pieces 52 and 53 for each of the plurality of sub-blocks 62a 1 ,62a 2 ,62b 1 ,62b 2 ,62c 1 ,62c 2 ,62d 1 ,62d 2 to form a part of the resistance sides R1 to R4, and a Wheatstone bridge circuit is formed by these resistance sides R1 to R4 (see FIG. 3).

[0065] In the magnetoelectric conversion unit 62, the first sub-blocks 62a respectively included in the first block 62a and the second block 62b 1 ,62b 1 contain magnetoresistive elements 51 having magnetosensitive directions in the same direction as each other. The first sub-blocks 62c respectively included in the third block 62c and the fourth block 62d 1 ,62d 1 also contain magnetoresistive elements 51 having magnetosensitive directions in the same direction as each other and in the same direction as the magnetoresistive elements 51 in the first sub-block 62a of the first block 62a 1 and the magnetoresistive elements 51 in the first sub-block 62b of the second block 62b 1 . Magnetoresistive elements 51 are disposed in the first sub-block 62c of the third block 62c 1 and the magnetoresistive elements 51 in the first sub-block 62d of the fourth block 62d 1 have magnetosensitive directions that are the same as those of the magnetoresistive elements 51 in the first sub-block 62a of the first block 62a 1 and the magnetoresistive elements 51 in the first sub-block 62b of the second block 62b 1It is connected in series with the magnetoresistive element 51 inside to form a resistance side R1.

[0066] The second sub-blocks 62a 2 ~62d 2 contained in the first to fourth blocks 62a to 62d respectively have a magnetosensitive direction in the same direction as each other and are magnetoresistive elements 51 having a magnetosensitive direction opposite to that of the magnetoresistive element 51 in each of the first sub-blocks 62a 1 ~62d 1 are arranged. The magnetoresistive elements 51 in the second sub-blocks 62a 2 ~62d 2 in each of the first to fourth blocks 62a to 62d are connected in series to form a resistance side R2.

[0067] The resistance sides R1 and R2 are connected in series with each other to form an output terminal Np2 therebetween, and a half-bridge circuit is formed by the resistance sides R1 and R2 (see FIG. 5B). That is, the magnetic sensor 60h in this example used for the quadrilinear current sensor 110 has two sub-blocks 62a 1 ~62a 2 , 62b 1 ~62b 2 , 62c 1 ~62c 2 , 62d 1 ~62d 2 in which magnetoresistive elements 51 are respectively arranged in each block 62a to 62d.

[0068] FIG. 7C shows the magnetoresistive changes ΔR of the magnetoresistive elements 51 and the respective resistance sides R1 to R4 or R1 and R2 of the four blocks 62a to 62d of the magnetic sensor 60 in FIG. 7A and the magnetic sensor 60h in FIG. 7B with respect to the energization amount of the conductor 24. The four blocks 62a to 62d are arranged in the X-axis direction on the upper surface of the substrate 61 in order from the vicinity of the center line of the arm 24c 1 to the +X side of the reference axis L. Thereby, the first block 62a (sub-block 62a 1 ~62a 4 or 62a 1 ~62a 2The magnetoresistive element 51 included in exhibits a magnetoresistance ΔR that is saturated magnetically at a maximum sensitivity with respect to the current amount Iin and at a magnetic field Bx of maximum intensity generated by the current to be measured that is applied to the conductor 24 and at a current amount Iina or more. 62a The magnetoresistive element 51 included in the second block 62b (sub-block 62b 1 ~62b 4 or 62b 1 ~62b 2 ) exhibits a magnetoresistance ΔR that is saturated magnetically at a sensitivity next to the largest with respect to the current amount Iin (smaller than the magnetoresistance ΔR 62a ) and at a current amount Iinb (>Iina) or more. 62b The magnetoresistive element 51 included in the third block 62c (sub-block 62c 1 ~62c 4 or 62c 1 ~62c 2 ) exhibits a magnetoresistance ΔR that is saturated magnetically at a sensitivity next to the largest with respect to the current amount Iin (smaller than the magnetoresistance ΔR 62b ) and at a current amount Iinc (>Iinb) or more. 62c The magnetoresistive element 51 included in the fourth block 62d (sub-block 62d 1 ~62d 4 or 62d 1 ~62d 2 ) exhibits a magnetoresistance ΔR that is saturated magnetically at a minimum sensitivity with respect to the current amount Iin (smaller than the magnetoresistance ΔR 62c ) and at a current amount Iind (>Iinc) or more. 62d The change in magnetoresistance ΔR(total) of each of the resistance sides R1 to R4 or R1, R2 is the magnetoresistance ΔR of the magnetoresistive elements 51 in the four blocks 62a to 62d

[0069] , ΔR 62a , ΔR 62b , ΔR 62c , ΔR 62dIt is given by the linear sum of. Therefore, the magnetoresistance change ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to Iina with respect to the measured current Iin, increases with the next strongest sensitivity (the next largest slope) in the range of current amounts Iina to Iinb, increases with a weak sensitivity (a small slope) in the range of current amounts Iinb to Iinc, increases with the weakest sensitivity (the smallest slope) in the range of current amounts Iinc to Iind, and exhibits a quadruple linearity that magnetically saturates at current amounts Iind or more.

[0070] Here, the four sensitivities in the quadruple linearity can be adjusted by the positions in the X-axis direction of the four blocks 62a to 62d on the substrate 61. Further, the magnetoresistive elements 51 in the first to fourth blocks 62a to 62d may have the same structure, can be formed by the same process, and since an amplifier for realizing a plurality of linearities is not required, the magnetic sensors 60, 60h can be configured with a small chip area.

[0071] At least one of the plurality of magnetoresistive elements 51 may have a free layer 51q to which a bias magnetic field is applied. Here, the bias magnetic field can be applied by any one of magnetic coupling of an antiferromagnet to the free layer 51q, magnetic coupling by a stacked ferrimagnetic structure (SyF (Synthetic Ferrimagnetic Structure), that is, a structure in which the magnetizations of two ferromagnetic bodies are antiferromagnetically coupled via a nonmagnetic intermediate layer), arrangement of a magnet near the free layer 51q, and arrangement of an energized coil wiring near the free layer 51q. Thereby, when an external magnetic field opposite to the bias magnetic field applied to the free layer 51q is applied to the magnetoresistive element 51, the magnetoresistance ΔR of the magnetoresistive element 51 does not vary because the exchange bias acts to fix the direction of magnetization of the free layer 51q when the intensity of the external magnetic field is smaller than the bias magnetic field. When the intensity of the external magnetic field is larger than the bias magnetic field, the external magnetic field cancels the action of the exchange bias and the direction of magnetization of the free layer 51q changes, so that it varies linearly. When the intensity of the external magnetic field becomes even larger, magnetic saturation occurs. Here, if the intensity of the bias magnetic field is set to be equal to or higher than the magnetic field intensity at which the magnetoresistive element 51 is magnetically saturated, when the external magnetic field becomes larger than the bias magnetic field, the free layer 51q saturates promptly at the same time, so that the magnetoresistance ΔR increases and decreases stepwise with respect to the external magnetic field.

[0072] At least two of the magnetoresistive elements 51 disposed in at least two of the plurality of blocks may have a free layer 51q to which a bias magnetic field is applied. Also, at least two of the magnetoresistive elements 51 disposed in at least two of the plurality of blocks may have a free layer 51q to which no bias magnetic field is applied. Further, among the plurality of blocks, the block in which the magnetoresistive element 51 having a free layer 51q to which no bias magnetic field is applied is disposed may be arranged relatively remotely from the conductor 24 (that is, a place where a weak magnetic field is applied) with respect to the block in which the magnetoresistive element 51 having a free layer to which a bias magnetic field is applied is disposed.

[0073] Fig. 8A shows the block arrangement of the magnetoresistive element 51 that constitutes the double-linear current sensor 110 whose overcurrent detection threshold changes according to the energization amount, using the full-bridge type magnetic sensor 60. In the magnetic sensor 60 of this example, the plurality of blocks arranged on the substrate 61 (omitted in Fig. 8A) include two additional extended blocks, namely the third block 62c and the fourth block 62d, in addition to the first block 62a and the second block 62b shown in Fig. 2A. However, the four blocks in which the magnetoresistive elements 51 forming each of the magnetoelectric conversion units 62 and 63 are disposed are arranged symmetrically with respect to the reference line L. Therefore, only the four blocks 62a to 62d in the magnetoelectric conversion unit 62 are illustrated, and the four blocks in the magnetoelectric conversion unit 63 are omitted.

[0074] Each of the first to fourth blocks 62a to 62d, as before, includes four sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,62c 1 ~62c 4 ,62d 1 ~62d 4 . Further, on one surface of the substrate 61, a plurality of blocks 62a, 62b, 62c, 62d or a plurality of sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,62c 1 ~62c 4 ,62d 1 ~62d 4 are electrically connected by a plurality of wirings (not shown). Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also include four sub-blocks each, and a plurality of wirings for electrically connecting them are provided.

[0075] The plurality of magnetoresistive elements 51 are provided in the plurality of sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ,62c 1 ~62c 4 ,62d 1~62d 4 Each time, the electrode pieces 52 and 53 are used to form a part of the series-connected resistance sides R1 to R4, and a Wheatstone bridge circuit is formed by these resistance sides R1 to R4 (see FIG. 3).

[0076] Each sub-block 62a of each block 62a~62d 1 ~62a 4 ,62b 1 ~62b 4 ,62c 1 ~62c 4 ,62d 1 ~62d 4 The magnetization direction of the magnetoresistive element 51 disposed therein is the same as that in the magnetic sensors 60 and 60h (see FIGS. 7A and 7B) constituting the above-described quadruple linear current sensor 110. However, the magnetoresistive elements 51 disposed in the first block 62a and the second block 62b (sub-blocks 62a 1 ~62a 4 ,62b 1 ~62b 4 ) are assumed to have a free layer 51q to which a bias magnetic field is applied. Here, it is assumed that the bias magnetic field of the magnetoresistive element 51 in the first block 62a is larger than the bias magnetic field of the magnetoresistive element 51 in the second block 62b. Also, it is assumed that any bias magnetic field is substantially equal to the magnetic field strength at which the magnetoresistance saturates. The magnetoresistive elements 51 disposed in the third block 62c and the fourth block 62d (sub-blocks 62c 1 ~62c 4 ,62d 1 ~62d 4 ) are assumed to have a free layer 51q to which no bias magnetic field is applied.

[0077] The first block 62a (sub-blocks 62a 1 ~62a 4 ) and the second block 62b (sub-blocks 62b 1 ~62b 4 ) are the arm 24c 1are arranged above and are located on the +X side and -X side of the arm center line, respectively. As a result, the magnetoresistive elements 51 in the first block 62a and the second block 62b are each applied with a magnetic field Bx of substantially maximum intensity generated by the measured current passed through the conductor 24. The third block 62c (sub-block 62c 1 ~62c 4 ) and the fourth block 62d (sub-block 62d 1 ~62d 4 ) are located between the two arms 24c 1 ,24c 2 and are located on the inner side and the reference axis L side of the arm 24c 1 , respectively. As a result, the magnetoresistive elements 51 in the third block 62c and the fourth block 62d are each applied with a relatively small and minimum intensity magnetic field Bx generated by the measured current passed through the conductor 24.

[0078] FIG. 8B shows the block arrangement of the magnetoresistive elements 51 that constitute the dual-linear current sensor 110 in which the threshold for overcurrent detection changes according to the energization amount, using the half-bridge type magnetic sensor 60h. In the magnetic sensor 60h of this example, the plurality of blocks arranged on the substrate 61 (omitted in FIG. 8B) include, in addition to the first block 62a and the second block 62b shown in FIG. 5A, two further extended blocks, namely the third block 62c and the fourth block 62d. However, the four blocks in which the magnetoresistive elements 51 forming each of the magnetoelectric conversion units 62, 63 are disposed are arranged symmetrically with respect to the reference line L. Therefore, only the four blocks 62a to 62d in the magnetoelectric conversion unit 62 are shown, and the four blocks in the magnetoelectric conversion unit 63 are omitted.

[0079] Each of the first to fourth blocks 62a to 62d includes two sub-blocks 62a 1 ,62a 2 ,62b 1 ,62b 2 ,62c 1 ,62c 2 ,62d 1 ,62d 2It includes. Further, on one surface of the substrate 61, a plurality of blocks 62a, 62b, 62c, 62d or a plurality of sub-blocks inside them, such as 62a 1 , 62a 2 , 62b 1 , 62b 2 , 62c 1 , 62c 2 , 62d 1 , 62d 2 A plurality of wirings (not shown) for electrically connecting them are laid. Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also include two sub-blocks each, and a plurality of wirings for electrically connecting them are provided.

[0080] The plurality of magnetoresistive elements 51 are the plurality of sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2 , 62c 1 , 62c 2 , 62d 1 , 62d 2 For each, they are connected in series using the electrode pieces 52 and 53 to form a part of the resistance sides R1 and R2, and a half-bridge circuit is formed by these resistance sides R1 and R2 (see Fig. 5B).

[0081] Each sub-block 62a of each block 62a to 62d 1 , 62a 2 , 62b 1 , 62b 2 , 62c 1 , 62c 2 , 62d 1 , 62d 2 The magnetization direction of the magnetoresistive element 51 disposed therein is the same as that in those of the magnetic sensors 60 and 60h (see Figs. 7A and 7B) constituting the aforementioned quadrilinear current sensor 110. However, the first block 62a and the second block 62b (sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2) The magnetoresistive element 51 disposed therein is assumed to have a free layer 51q to which a bias magnetic field is applied. Here, it is assumed that the bias magnetic field of the magnetoresistive element 51 in the first block 62a is larger than the bias magnetic field of the magnetoresistive element 51 in the second block 62b. Also, it is assumed that each bias magnetic field is approximately equal to the magnetic field strength at which magnetoresistance saturates. The magnetoresistive element 51 disposed in the third block 62c and the fourth block 62d (sub-blocks 62c 1 , 62c 2 , 62d 1 , 62d 2 ) is assumed to have a free layer 51q to which no bias magnetic field is applied.

[0082] The first block 62a (sub-block 62a 1 , 62a 2 ) and the second block 62b (sub-block 62b 1 , 62b 2 ) are arranged on the arm 24c 1 and are located on the +X side and -X side of the center line of the arm, respectively. Thereby, the magnetoresistive elements 51 in the first block 62a and the second block 62b are each applied with a magnetic field Bx having a substantially maximum intensity generated by the measured current energized to the conductor 24. The third block 62c (sub-block 62c 1 , 62c 2 ) and the fourth block 62d (sub-block 62d 1 , 62d 2 ) are located between the two arms 24c 1 , 24c 2 and are located on the inner side and the reference axis L side of the arm 24c 1 , respectively. Thereby, the magnetoresistive elements 51 in the third block 62c and the fourth block 62d are each applied with a relatively small and minimum intensity magnetic field Bx generated by the measured current energized to the conductor 24.

[0083] FIG. 8C shows the magnetoresistance changes ΔR of the magnetoresistive elements 51 and the respective resistance sides R1 to R4 or R1, R2 of the magnetic sensor 60 of FIG. 8A and the magnetic sensor 60h of FIG. 8B with respect to the amount of current applied to the conductor 24. The first block 62a (sub-block 62a1 ~62a 4 or 62a 1 ~62a 2 ) The magnetoresistive element 51 included in it is applied with a magnetic field Bx of almost maximum intensity generated by the current to be measured that is passed through the conductor 24, and when it exceeds the current amount Iina that generates a magnetic field of an intensity that cancels out a relatively large bias magnetic field, the magnetoresistance ΔR rapidly rises and saturates magnetically. 62a exhibits. The second block 62b (sub-block 62b 1 ~62b 4 or 62b 1 ~62b 2 ) The magnetoresistive element 51 included in it is applied with a magnetic field Bx of almost maximum intensity generated by the current to be measured, and when it exceeds the current amount Iinb (<Iina) that generates a magnetic field of an intensity that cancels out a relatively small bias magnetic field, the magnetoresistance ΔR rapidly rises and saturates magnetically. 62b exhibits. The third block 62c (sub-block 62c 1 ~62c 4 or 62c 1 ~62c 2 ) The magnetoresistive element 51 included in it is applied with a relatively small-intensity magnetic field Bx generated by the current to be measured, and has a relatively small sensitivity with respect to the current amount Iin and magnetically saturates at a relatively small current amount Iinc (=Iinb) or more, presenting a magnetoresistance ΔR. 62c exhibits. The fourth block 62d (sub-block 62d 1 ~62d 4 or 62d 1 ~62d 2 ) The magnetoresistive element 51 included in it is applied with a magnetic field Bx of minimum intensity generated by the current to be measured, has the minimum sensitivity with respect to the current amount Iin (smaller than the magnetoresistance ΔR 62c ), and magnetically saturates at a large current amount Iind (=Iina>Iinb) or more, presenting a magnetoresistance ΔR. 62d exhibits.

[0084] The magnetoresistance change ΔR(total) of each of the resistance sides R1~R4 or R1, R2 is the magnetoresistance ΔR of the magnetoresistive elements 51 within the four blocks 62a~62d 62a , ΔR 62b , ΔR 62c , ΔR62d It is given by the linear sum of. The magnetic resistance change ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the range of the current amount from 0 to Iinb with respect to the measured current Iin, sharply increases at the current amount Iinb, increases with a weak sensitivity (small slope) in the range of the current amount from Iinb to Iina, sharply increases at the current amount Iina, and exhibits a double linearity of magnetic saturation when the current amount is Iina or more. Note that the sensitivities in the ranges of the current amounts from 0 to Iinb and from Iinb to Iina can be adjusted by the positions in the X-axis direction of the blocks 62c and 62d on the substrate 61.

[0085] Here, the range of the current amount from 0 to Iinb (= Iinc) is the range during normal operation, the current amount Iinb is the threshold of normal operation, the range of the current amount from Iinb to Iina (= Iind) is the range during peak operation, and the current amount Iina is the threshold of peak operation. By changing the thresholds Iinb and Iina for overcurrent detection according to the energization amount Iin, the current amount Iin can be detected with strong sensitivity within the range of low magnetic resistance change during normal operation, and the current amount Iin can be detected with weak sensitivity within the range of high magnetic resistance change during peak operation when exceeding the threshold Iinb of normal operation. Also, by the sharp increase in the magnetic resistance change ΔR at the current amounts Iinb and Iina, it is possible to easily detect whether it is in the range of normal operation, peak operation, or a current range above that.

[0086] FIG. 9A shows the block arrangement of the magnetoresistive element 51 that constitutes the multi-linear current sensor 110 whose sensitivity changes according to the degree of overcurrent, using the full-bridge type magnetic sensor 60. In the magnetic sensor 60 of this example, the plurality of blocks arranged on the substrate 61 (omitted in FIG. 9A) include the first block 62a and the second block 62b. However, the two blocks where the magnetoresistive elements 51 forming the magnetoelectric conversion units 62 and 63 are disposed are arranged symmetrically with respect to the reference line L. Therefore, only the two blocks 62a and 62b in the magnetoelectric conversion unit 62 are shown, and the two blocks in the magnetoelectric conversion unit 63 are omitted from the illustration. In this example, the second block 62b is arranged on the reference line L side with respect to the first block 62a. Thereby, the magnetic sensor 60 can be configured with a small chip area.

[0087] Each of the first block 62a and the second block 62b includes four sub-blocks 62a 1 ~62a 4 , 62b 1 ~62b 4 and is provided on one surface of the substrate 61. A plurality of blocks 62a, 62b or a plurality of sub-blocks 62a 1 ~62a 4 , 62b 1 ~62b 4 inside them are electrically connected by a plurality of wirings (not shown). Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also include four sub-blocks each, and a plurality of wirings for electrically connecting them are provided.

[0088] A plurality of magnetoresistive elements 51 are connected in series using electrode pieces 52 and 53 for each of the plurality of sub-blocks 62a 1 ~62a 4 , 62b 1 ~62b 4 to form a part of resistance sides R1 to R4, and a Wheatstone bridge circuit is formed by these resistance sides R1 to R4 (see FIG. 3).

[0089] The magnetization directions of the magnetoresistive elements 51 disposed in each sub-block 62a of each block 62a, 62b 1 ~62a 4 , 62b 1 ~62b 4 are the same as those in the magnetic sensors 60 and 60h (see FIGS. 7A and 7B) constituting the above-described quadrilinear current sensor 110. However, the magnetoresistive elements 51 disposed in the first block 62a (sub-blocks 62a 1 ~62a 4 ) are assumed to have a free layer 51q to which a bias magnetic field is applied. Here, the bias magnetic field is assumed to be sufficiently smaller than the magnetic field strength at which the magnetoresistive element 51 is magnetically saturated. The magnetoresistive elements 51 disposed in the second block 62b (sub-blocks 62b 1 ~62b 4 ) are assumed to have a free layer 51q to which no bias magnetic field is applied.

[0090] The first block 62a (sub-block 62a 1 ~62a 4 ) is arranged near the center line on the arm 24c 1 . Thereby, the magnetoresistive element 51 in the first block 62a is applied with a magnetic field Bx of substantially maximum intensity generated by the measured current passed through the conductor 24. The second block 62b (sub-block 62b 1 ~62b 4 ) is located between the two arms 24c 1 , 24c 2 . Thereby, the magnetoresistive element 51 in the second block 62b is applied with a magnetic field Bx of small intensity generated by the measured current passed through the conductor 24.

[0091] FIG. 9B shows a block arrangement of magnetoresistive elements 51 constituting a multi-linear type current sensor 110 whose sensitivity changes according to the degree of overcurrent, using a half-bridge type magnetic sensor 60h. In the magnetic sensor 60h of this example, a plurality of blocks arranged on a substrate 61 (omitted in FIG. 9B) include a first block 62a and a second block 62b. However, the two blocks in which the magnetoresistive elements 51 forming the magnetoelectric conversion units 62, 63 are disposed are arranged symmetrically with respect to the reference line L. Therefore, only the two blocks 62a, 62b in the magnetoelectric conversion unit 62 are shown, and the two blocks in the magnetoelectric conversion unit 63 are omitted from illustration. In this example, the second block 62b is arranged on the reference line L side with respect to the first block 62a. Thereby, the magnetic sensor 60 can be configured with a small chip area.

[0092] Each of the first block 62a and the second block 62b includes two sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2 . Further, on one surface of the substrate 61, a plurality of blocks 62a, 62b or a plurality of sub-blocks 62a inside them 1 , 62a 2 , 62b 1 , 62b2 A plurality of wirings (not shown) for electrical connection are laid. Similar to the magnetoelectric conversion unit 62, the plurality of blocks in the magnetoelectric conversion unit 63 also each include two sub-blocks, and a plurality of wirings for electrically connecting them are provided.

[0093] The plurality of magnetoresistive elements 51 are connected in series using the electrode pieces 52 and 53 for each of the plurality of sub-blocks 62a 1 , 62a 2 , 62b 1 , 62b 2 to form a part of the resistance sides R1 and R2, and a half-bridge circuit is formed by these resistance sides R1 and R2 (see FIG. 5B).

[0094] For each sub-block 62a, 62b of each block 62a, 62b 1 , 62a 2 , 62b 1 , 62b 2 the magnetization direction of the magnetoresistive element 51 disposed therein is the same as that in the magnetic sensors 60 and 60h (see FIGS. 7A and 7B) constituting the above-described quadrilinear current sensor 110. However, the magnetoresistive element 51 disposed in the first block 62a (sub-block 62a 1 , 62a 2 ) is assumed to have a free layer 51q to which a bias magnetic field is applied. Here, the bias magnetic field is assumed to be sufficiently smaller than the magnetic field strength at which the magnetoresistive element 51 is magnetically saturated. The magnetoresistive element 51 disposed in the second block 62b (sub-block 62b 1 , 62b 2 ) is assumed to have a free layer 51q to which no bias magnetic field is applied. Here, the magnetoresistive element 51 in the second block 62b is assumed to be magnetically saturated at a magnetic field strength substantially equal to the bias magnetic field of the magnetoresistive element 51 in the first block 62a.

[0095] The first block 62a (sub-block 62a 1 , 62a 2 ) is the arm 24c 1It is arranged near the upper center line. Thereby, the magnetoresistive element 51 in the first block 62a is applied with a magnetic field Bx having a substantially maximum intensity generated by the measured current passed through the conductor 24. The second block 62b (sub-block 62b 1 , 62b 2 ) is located between the two arms 24c 1 , 24c 2 . Thereby, the magnetoresistive element 51 in the second block 62b is applied with a magnetic field Bx having a small intensity generated by the measured current passed through the conductor 24.

[0096] Fig. 9C shows the magnetoresistance changes of the magnetoresistive elements 51 and the respective resistance sides R1 to R4 or R1, R2 in the two blocks 62a, 62b of the magnetic sensor 60 of Fig. 9A and the magnetic sensor 60h of Fig. 9B with respect to the energization amount of the conductor 24. The magnetoresistive element 51 included in the first block 62a (sub-block 62a 1 ~62a 4 or 62a 1 ~62a 2 ) is applied with a magnetic field Bx having a substantially maximum intensity generated by the measured current passed through the conductor 24, and increases when the current amount Iin exceeds the current amount Iinb that generates a magnetic field capable of canceling the bias magnetic field, and magnetically saturates at a current amount Iina or more larger than the current amount Iinb, presenting a magnetoresistance ΔR 62a . The magnetoresistive element 51 included in the second block 62b (sub-block 62b 1 ~62b 4 or 62b 1 ~62b 2 ) is applied with a small magnetic field Bx generated by the measured current, increases with a small sensitivity (smaller than the magnetoresistance ΔR 62a ) with respect to the current amount Iin, and presents a magnetoresistance ΔR 62b that magnetically saturates at a current amount Iinb or more.

[0097] The magnetoresistance change ΔR(total) of each of the resistance sides R1 to R4 or R1, R2 is the magnetoresistance ΔR 62a , ΔR 62bIt is given by the linear sum. The magnetic resistance change ΔR increases with a weak sensitivity (i.e., a small slope) in the range of the current amount from 0 to Iinb with respect to the measured current Iin, increases with a strong sensitivity (a large slope) in the range of the current amount from Iinb to Iina, and exhibits a double linearity of magnetic saturation when the current amount is Iina or more. Note that the two sensitivities in the double linearity can be adjusted according to the positions of the blocks 62a and 62b on the substrate 61 in the X-axis direction.

[0098] Here, the range of the current amount from 0 to Iinb is the normal control range, the range of the current amount from Iinb to Iina is the PWM control range, and the range of the current amount of Iina or more is the control range at the time of a severe fault. By changing the sensitivity according to the degree of the overcurrent, the current amount Iin is detected with a weak sensitivity during normal operation. When the current amount Iin exceeds the threshold value Iinb, the current amount Iin is detected with a strong sensitivity in order to, for example, PWM control the switch of the power conversion circuit. When the current amount Iin exceeds the threshold value Iina, it is determined as a severe fault and the switch is opened. On the other hand, in this range, since current measurement is not required, the magnetic resistance of the magnetoresistive element 51 is saturated. By increasing the sensitivity in the range from the current amount Iinb to Iina, delicate PWM control becomes possible so that the current amount does not exceed Iina and cause a severe fault.

[0099] Fig. 10A shows the behavior of the magnetic resistance change ΔR of the magnetoresistive element 51 in one block or sub-block with respect to the magnetization M of the free layer 51q. The magnetic resistance change ΔR of the magnetoresistive element 51 becomes zero when the magnetizations of the free layer 51q and the fixed layer 51o are parallel to each other (P direction), and does not change until the magnetization M of the free layer exceeds the intensity that cancels the bias magnetic field applied to the free layer 51q. When it exceeds, it increases linearly with respect to the magnetization M. When the magnetization M further increases, it exhibits a behavior of magnetic saturation in which the magnetizations of the free layer 51q and the fixed layer 51o are in the antiparallel direction (AP direction). The magnetic resistance at saturation is denoted as the saturation resistance ΔR TMR and is denoted. The center of the variation of the magnetic resistance is denoted as the shift amount ΔIin. The behavior of the magnetic resistance change ΔR can be expressed using the sigmoid function σ(M) (→1 for M→+∞, 0 for M→-∞).

[0100] FIG. 10B shows a general expression of the magnetoresistance change ΔR of each of the resistive sides R1 to R4. The magnetoresistance ΔR of each of the resistive sides R1 to R4 is the linear sum of the magnetoresistances of the magnetoresistive elements 51 in a plurality of blocks k, ΔR = Σ k ΔR TMRk ·σ(M k ) and can be expressed as such. Here, the magnetization M induced in the magnetoresistive element 51 in each block k with respect to the measured current Iin passed through the conductor 24 k =w k ·Iin + θ k is given, where k is an index representing a plurality of blocks, w k is a linear coefficient with respect to the current amount Iin (the product of the magnetic susceptibility χ and the magnetoelectric conversion coefficient K determined according to the position x of the block k, that is, the magnetic field applied to the magnetoresistive element 51 when a unit current flows through the conductor 24), θ k is a coefficient determined by the bias magnetic field applied to the free layer 51q (the product with the magnetic susceptibility χ). The saturation resistance ΔR TMRk can be adjusted by the TMR ratio, the zero magnetic field resistance (the number of series in the block of the magnetoresistive element 51, the cross-sectional area of the magnetoresistive element 51, the film thickness of the tunnel layer 51p, etc.). The linear coefficient w k can be adjusted by the magnetic susceptibility χ of the free layer and the location on the conductor 24 of the plurality of blocks k. Furthermore, the shape of the free layer and the perpendicular magnetic anisotropy may be designed to adjust the easy axis of magnetization. The shift amount ΔIin can be adjusted by the strength of the bias magnetic field. A hard magnetic material is arranged near the free layer 51q, an antiferromagnet (IrMn, PtMn, manganese nitride Mn x N y , nickel oxide Ni x O y , etc.), or a ferromagnetic / antiferromagnetic laminated structure ([Co / Pt]n, [Co / Pd]n, etc.) can be joined for adjustment. Therefore, by designing ΔR TMRk , w k , and θ k for each of the plurality of blocks k, a magnetoresistance change showing arbitrary behavior can be realized.

[0101] Figure 11 shows four modes of change in the output voltage Vout of the current sensor 110 with respect to the energization amount (i.e., the magnetoresistance change ΔR of the magnetic sensors 60, 60h). (1) shows that the output voltage Vout increases as the current amount Iin increases (dVout / dIin > 0), but the slope gradually decreases (d 2 Vout / dIin 2 < 0) and shows a logarithmic increase that saturates. (2) shows that the output voltage Vout increases as the current amount Iin increases (dVout / dIin > 0), but the slope gradually increases (d 2 Vout / dIin 2 > 0) and shows an exponential increase that saturates when exceeding a threshold value. (3) shows that the output voltage Vout increases as the current amount Iin increases (dVout / dIin > 0), but the slope increases or decreases each time a plurality of threshold values are exceeded (d 2 Vout / dIin 2 is arbitrary), and shows a monotonic increase that saturates when exceeding a threshold value. (4) shows that the output voltage Vout increases or decreases each time the current amount Iin increases and exceeds a plurality of threshold values, and the slope increases or decreases (dVout / dIin and d 2 Vout / dIin 2 is arbitrary), and shows an arbitrary increase that saturates when exceeding the last threshold value.

[0102] Figure 12 shows the polarities of the output voltage Vout of the current sensor 110 with respect to the energization amount (i.e., the magnetoresistance change ΔR of the magnetic sensors 60, 60h). (a) shows a unipolar characteristic in which the output voltage Vout varies with respect to a positive current amount Iin and does not vary with respect to a negative current amount Iin. (b) shows a bipolar symmetric characteristic (Vout(-Iin) = -Vout(Iin)) in which the output voltage Vout varies symmetrically with respect to positive and negative current amounts Iin. (c) shows a bipolar asymmetric characteristic in which the output voltage Vout varies with respect to positive and negative current amounts Iin, but the mode of change is asymmetric with respect to positive and negative current amounts Iin.

[0103] Figure 13 shows examples of combinations of the modes of change in the output voltage Vout of the magnetic sensors 60, 60h shown in Figure 11 and the polarities shown in Figure 12.

[0104] In the upper part, an example of the combination of (a) unipolar characteristics and (4) arbitrary increase, that is, the sawtooth characteristics, is shown. In this example, the output voltage Vout varies only with respect to a positive current amount Iin, increases linearly as the current amount Iin increases, becomes zero when the current amount Iin exceeds the threshold values Iina, Iinb, Iinc, and then increases linearly again from there. By combining magnetic sensors 60, 60h having such sawtooth characteristics of the output voltage with another current sensor having a large range and low accuracy, the current amount is roughly measured by the other current sensor to determine which sawtooth of the sawtooth characteristics of the magnetic sensors 60, 60h it is located in, and within the range of that sawtooth, the current amount Iin can be precisely determined from the output voltage Vout of the magnetic sensors 60, 60h.

[0105] In the lower part, an example of the combination of (c) bipolar asymmetric characteristics and the combination of (1) logarithmic increase and (3) monotonic increase is shown. In this example, the output voltage Vout increases linearly as the current amount Iin increases in the positive direction, but when the current amount Iin exceeds the threshold value Iina, the slope becomes gentle, saturates when it exceeds the threshold value Iinb, and when the current amount Iin increases in the negative direction and exceeds the threshold value Iinc, it increases in the negative direction in a step function manner and saturates. When using magnetic sensors 60, 60h having such characteristics to measure the coil current of a buck converter circuit operating in, for example, a continuous conduction mode, since the polarity of the current is determined during normal times, the positive current amount can be precisely measured, and the reverse current generated during a fault can be detected to make a determination of normal or abnormal.

[0106] The behavior of the magnetic sensors 60, 60h with respect to the current amount Iin includes a total of 20 modes including the combinations of (a) unipolar characteristics and the increase characteristics of (1) to (4) (4 modes), (b) bipolar symmetric characteristics and the increase characteristics of (1) to (4) (4 modes), and (c) bipolar asymmetric characteristics and the increase characteristics of (1) to (4) (12 modes). Six basic characteristics I of the magnetoresistive element 51 for constituting these 20 modes ± , II ± , III ±is defined. These basic characteristics can be realized by determining the block arrangement of the magnetoresistive elements within each block (the direction of the magnetic field generated by the current to be measured), the magnetic field detection direction (magnetic sensing direction), and the direction of the bias magnetic field.

[0107] FIG. 14A shows an example of the block arrangement, magnetic field detection direction, and bias magnetic field direction of the magnetoresistive element 51 having the basic characteristics of the first type I. ± Note that the blocks of the magnetoresistive element 51 can be arranged symmetrically with respect to the reference line L on the substrate 61, and the magnetoresistive elements 51 arranged within the blocks can be configured symmetrically with respect to the reference line L, that is, the magnetoelectric conversion units 62, 63 can be configured symmetrically. Here, only the basic characteristics of the magnetoresistive element 51 arranged on the +X side with respect to the reference line L will be considered.

[0108] In this example, the blocks of the magnetoresistive element 51 are located on the upper surface of the substrate 61 on the +X side with respect to the reference line L. As an example, the arm 24c of the conductor 24 1 is located above. When the current to be measured Iin is input to the arm 24c 1 of the magnetoresistive element 51 within this block, a magnetic field B in the +X direction is applied. The magnetoresistive element 51 of type I + has a magnetization (pin) of the fixed phase fixed in the anti-parallel (-X direction) with respect to the X magnetic field B, and no bias magnetic field is applied. The magnetoresistive element 51 of type I - has a magnetization (pin) of the fixed phase parallel (+X direction) with respect to the X magnetic field B, and no bias magnetic field is applied.

[0109] FIG. 14B shows the characteristics of the magnetoresistance change ΔR with respect to the energization amount Iin exhibited by the magnetoresistive element 51 of the first type I. Type I ± The magnetoresistive element 51 of +The magnetic resistance change ΔR (shown by the solid line) of the magnetoresistive element 51 has the characteristic that with no bias magnetic field applied, zero current serves as the fluctuation reference, and since the pin direction is antiparallel to the magnetic field B, the magnetic resistance increases as the current amount Iin increases in the positive direction, saturates at a larger current amount Iin, decreases (increases in the negative direction) as the current amount increases in the negative direction, and saturates at a larger negative current amount Iin. Type I - The magnetic resistance change ΔR (shown by the dotted line) of the magnetoresistive element 51 has the characteristic that with no bias magnetic field applied, zero current serves as the fluctuation reference, and since the pin direction is parallel to the magnetic field B, the magnetic resistance decreases (increases in the negative direction) as the current amount Iin increases in the positive direction, saturates at a larger current amount Iin, increases as the current amount increases in the negative direction, and saturates at a larger negative current amount Iin.

[0110] Fig. 15A shows an example of the block arrangement, magnetic field detection direction, and bias magnetic field direction of the magnetoresistive element 51 having the basic characteristics of the second type II ± The block of the magnetoresistive element 51 is located on the +X side with respect to the reference line L on the upper surface of the substrate 61 (in this example, it is located on the arm 24c 1 of the conductor 24). When the measured current Iin is input to the arm 24c 1 of the magnetoresistive element 51 within this block, a magnetic field B in the +X direction is applied. Type II + The magnetoresistive element 51 of type II has a magnetization (pin) of the fixed phase fixed antiparallel (-X direction) to the X magnetic field B, and an antiparallel (-X direction) bias magnetic field is applied. Type II - The magnetoresistive element 51 of type II has a magnetization (pin) of the fixed phase parallel (+X direction) to the X magnetic field B, and an antiparallel (-X direction) bias magnetic field is applied.

[0111] Fig. 15B shows the characteristics of the magnetic resistance change ΔR with respect to the current amount Iin exhibited by the magnetoresistive element 51 of the second type II ± The magnetic resistance change ΔR (shown by the solid line) of the magnetoresistive element 51 of type II has the characteristic that with an antiparallel bias magnetic field applied, the plus current I + The magnetic resistance change ΔR (shown by the solid line) of the magnetoresistive element 51 of type II has the characteristic that with an antiparallel bias magnetic field applied, the plus current I +0It varies with the above current amount Iin, and since the pin direction is anti-parallel to the magnetic field B, it increases as the current amount Iin increases in the positive direction and exhibits the characteristic of saturating at a larger current amount Iin. Type II - The magnetic resistance change ΔR (indicated by the dotted line) of the magnetic resistance element 51 of - varies with the current amount Iin above, and because the plus current I +0 It varies with the above current amount Iin, and since the pin direction is parallel to the magnetic field B, it decreases (increases in the negative direction) as the current amount Iin increases in the positive direction and exhibits the characteristic of saturating at a larger current amount Iin.

[0112] Fig. 16A shows an example of the block arrangement, magnetic field detection direction, and bias magnetic field direction of the magnetic resistance element 51 having the basic characteristics of the third type III ± The blocks of the magnetic resistance element 51 are located on the +X side with respect to the reference line L on the upper surface of the substrate 61 (in this example, on the arm 24c 1 of the conductor 24). The magnetic resistance element 51 within this block has a magnetic field B in the +X direction applied when the current Iin to be measured is input to the arm 24c 1 . The magnetic resistance element 51 of type III + has a magnetization (pin) of the fixed phase fixed in the anti-parallel direction (-X direction) with respect to the X magnetic field B, and a parallel (+X direction) bias magnetic field is applied. The magnetic resistance element 51 of type III - has a magnetization (pin) of the fixed phase parallel to the X magnetic field B (+X direction), and a parallel (+X direction) bias magnetic field is applied.

[0113] Fig. 16B shows the characteristics of the magnetic resistance change ΔR with respect to the energization amount Iin exhibited by the magnetic resistance element 51 of the third type III ± . The magnetic resistance change ΔR (indicated by the solid line) of the magnetic resistance element 51 of type III + varies with the current amount Iin below, and since the pin direction is anti-parallel to the magnetic field B, it decreases (increases in the negative direction) as the current amount Iin increases in the negative direction and exhibits the characteristic of saturating at a larger current amount Iin. Type III -0 varies with the current amount Iin below, and since the pin direction is anti-parallel to the magnetic field B, it decreases (increases in the negative direction) as the current amount Iin increases in the negative direction and exhibits the characteristic of saturating at a larger current amount Iin. Type III -The magnetoresistance change ΔR (indicated by the dotted line) of the magnetoresistive element 51 varies with the following input current Iin. Since the pin direction is parallel to the magnetic field B, the magnetoresistance change increases as the input current Iin increases in the negative direction and saturates at a larger input current Iin. -0 Using three types I

[0114] , II ± , and III ± of the magnetoresistive elements 51, the behaviors of the magnetoresistance change ΔR (i.e., the output voltage Vout (∝ΔR)) with respect to the input current Iin of the magnetic sensors 60 and 60h are reproduced. For example, four behaviors combining (b) bipolar symmetric characteristics and (1)-(4) increasing characteristics, four behaviors combining (a) unipolar characteristics and (1)-(4) increasing characteristics, and two behaviors combining (c) bipolar asymmetric characteristics and (3) increasing characteristics are reproduced. ±

[0115]

[0116] FIG. 17A shows the type and block arrangement of the magnetoresistive element 51 exhibiting (b) bipolar symmetry and (1) logarithmic increasing characteristics. Note that the blocks of the magnetoresistive element 51 can be arranged symmetrically with respect to the reference line L on the substrate 61, and the magnetoresistive element 51 arranged within the block can be configured symmetrically with respect to the reference line L, i.e., the magnetoelectric conversion units 62 and 63 can be configured symmetrically. Here, only the type and block arrangement of the magnetoresistive element 51 arranged on the +X side with respect to the reference line L are considered. Also, the magnetoresistive elements 51 within the sub-blocks included in each block are appropriately connected to form the resistance sides R1 to R4 in the full-bridge type magnetic sensor 60 or the resistance sides R1 to R2 in the half-bridge type magnetic sensor 60h. In this example, on the upper surface of the substrate 61, three blocks in which the magnetoresistive elements 51 of type I + (1) to I + (3) are respectively arranged are arrayed in the X-axis direction. Type I + (1) to I + (3)The magnetoresistive elements 51 in (3) are each magnetically saturated at a current amount Iin1, Iin2, Iin3 (Iin1 < Iin2 < Iin3) or more. Type I + The blocks of the magnetoresistive elements 51 in (1) are the arms 24c of the conductor 24 1 and are located on the center line thereof, and a magnetic field with the maximum intensity generated by the measured current Iin passed through the conductor 24 is applied to these magnetoresistive elements 51. Type I + The blocks of the magnetoresistive elements 51 in (2) are on the inner side of the arm 24c 1 and are located thereon, and a magnetic field with a medium intensity generated by the measured current Iin is applied to these magnetoresistive elements 51. Type I + The blocks of the magnetoresistive elements 51 in (3) are between the arm 24c 1 , 24c 2 and are located therebetween, and a magnetic field with the minimum intensity generated by the measured current Iin is applied to these magnetoresistive elements 51.

[0117] Fig. 17B shows the characteristics of the magnetic resistance change ΔR with respect to the energization amount Iin exhibited by each block of the magnetoresistive element 51 in Fig. 17A and the magnetic sensors 60, 60h (each resistance side R1 to R4 or R1, R2). Type I + The magnetoresistive element 51 in (1) has the strongest sensitivity with respect to the current amount Iin when a magnetic field with the maximum intensity generated by the measured current Iin is applied, and is magnetically saturated at a current amount Iin1 or more. Type I + The magnetoresistive element 51 in (2) has a medium sensitivity with respect to the current amount Iin when a magnetic field with a medium intensity is applied, and is magnetically saturated at a current amount Iin2 (>Iin1) or more. Type I + The magnetoresistive element 51 in (3) has the weakest sensitivity with respect to the current amount Iin when a magnetic field with the minimum intensity is applied, and is magnetically saturated at a current amount Iin3 (>Iin2) or more.

[0118] The magnetic resistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance side R1 to R4 or R1, R2) is three types of I + (1) to I +It is given by the linear sum of the magnetoresistances of the magnetoresistive elements 51 in (3). Therefore, the magnetoresistance change ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to Iin1 for a positive measured current Iin, increases with a medium sensitivity (medium slope) in the range of current amounts Iin1 to Iin2, increases with the weakest sensitivity (minimum slope) in the range of current amounts Iin2 to Iin3, and reaches magnetic saturation at a current amount of Iin3 or more. Also, the magnetoresistance change ΔR decreases (increases in the negative direction) with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to -Iin1 for a negative measured current Iin, decreases (increases in the negative direction) with a medium sensitivity (medium slope) in the range of current amounts -Iin1 to -Iin2, decreases (increases in the negative direction) with the weakest sensitivity (minimum slope) in the range of current amounts -Iin2 to -Iin3, and reaches magnetic saturation at a current amount of -Iin3 or less.

[0119] Fig. 18A shows the type and block arrangement of the magnetoresistive element 51 that is (b) bipolar symmetric and exhibits (2) exponential increase characteristics. In this example, on the upper surface of the substrate 61, blocks of the magnetoresistive elements 51 of type I + , II + (1), II + (2), III + (1), III + Five blocks in which the magnetoresistive elements 51 of (2) are respectively arranged are arrayed. The block of the magnetoresistive element 51 of type I + is located between the arms 24c of the conductor 24 1 , 24c 2 , and a magnetic field with the minimum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. The blocks of the magnetoresistive elements 51 of type II + (1), II + (2) are located on the arm 24c 1 , and a magnetic field with almost the maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. The type II + (1), II +(2) The magnetoresistance of the magnetoresistive element 51 varies with respect to a current amount Iin equal to or greater than current amounts Iin2 and Iin1 (>Iin2), where the applied bias magnetic fields are relatively strong and weak (referred to as a strong bias magnetic field and a weak bias magnetic field), respectively, and magnetically saturates at a current amount equal to or greater than Iin3. Type III + (1),III + The blocks of the magnetoresistive element 51 in (2) are located on the arm 24c 1 and a magnetic field of almost maximum intensity generated by the current to be measured Iin is applied to those magnetoresistive elements 51. Type III + (1),III + (2) The magnetoresistance of the magnetoresistive element 51 varies with respect to a current amount Iin equal to or less than current amounts -Iin2 and -Iin1 (<-Iin2), where a strong bias magnetic field and a weak bias magnetic field are applied, respectively, and magnetically saturates at a current amount equal to or less than -Iin3.

[0120] Fig. 18B shows the characteristics of the change in magnetoresistance ΔR with respect to the current amount Iin exhibited by each block of the magnetoresistive element 51 in Fig. 18A and the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2). Type I + (1) The magnetoresistive element 51 has the weakest sensitivity with respect to the current amount Iin when a magnetic field of minimum intensity generated by the current to be measured Iin is applied, and magnetically saturates at a current amount equal to or greater than Iin3 and at a current amount equal to or less than -Iin3. Type II + (1) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, varies its magnetoresistance at a current amount equal to or greater than Iin2, and magnetically saturates at a current amount equal to or greater than Iin3. Type II + (2) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, varies its magnetoresistance at a current amount equal to or greater than Iin1 (<Iin2), and magnetically saturates at a current amount equal to or greater than Iin3. Type III + (1) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, varies its magnetoresistance at a current amount equal to or less than -Iin2, and magnetically saturates at a current amount equal to or less than -Iin3. Type III +The magnetoresistive element 51 in (2) has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, varies in magnetoresistance at a current amount of -Iin1 (> -Iin2) or less, and saturates magnetically at a current amount of -Iin3 or less.

[0121] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance side R1 to R4 or R1, R2) is of five types I + , II + (1), II + (2), III + (1), III + The magnetoresistance change ΔR is given by the linear sum of the magnetoresistances of the magnetoresistive elements 51 in (2). Therefore, with respect to the positive measured current Iin, the magnetoresistance change ΔR increases with the weakest sensitivity (i.e., the smallest slope) in the range of the current amount from 0 to Iin1, increases with a medium sensitivity (medium slope) in the range of the current amount from Iin1 to Iin2, increases with the strongest sensitivity (the largest slope) in the range of the current amount from Iin2 to Iin3, and saturates magnetically at a current amount of Iin3 or more. Also, with respect to the negative measured current Iin, the magnetoresistance change ΔR decreases (increases in the negative direction) with the weakest sensitivity (i.e., the smallest slope) in the range of the current amount from 0 to -Iin1, decreases (increases in the negative direction) with a medium sensitivity (medium slope) in the range of the current amount from -Iin1 to -Iin2, decreases (increases in the negative direction) with the strongest sensitivity (the largest slope) in the range of the current amount from -Iin2 to -Iin3, and saturates magnetically at a current amount of -Iin3 or less.

[0122] Fig. 19A shows, in (b), the type and block arrangement of the magnetoresistive element 51 that is bipolar symmetric and exhibits a (3) monotonically increasing characteristic. In this example, on the upper surface of the substrate 61, six blocks in which the magnetoresistive elements 51 of type I + (1), I + (2), II + (1), II + (2), III + (1), III + (2) are respectively arranged are arrayed. The blocks of the magnetoresistive elements 51 of type I + (1), I + The blocks of the magnetoresistive elements 51 of (2) are the arms 24c of the conductor 24 1 , 24c 2 between the arms 24c1 They are respectively located on the side and on the reference axis L side, and magnetic fields of medium and minimum intensities generated by the measured current Iin are respectively applied to those magnetoresistive elements 51. Type I + (1), I + (2) The magnetoresistance of the magnetoresistive element 51 varies linearly with the current amount Iin, magnetically saturates respectively at current amounts Iin1 and Iin2 or more, and magnetically saturates respectively at current amounts Iin1 and Iin2 or less. Type II + (1), II + (2) The blocks of the magnetoresistive element 51 are located on the arm 24c 1 and a magnetic field of almost maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. Type II + (1), II + (2) The magnetoresistance of the magnetoresistive element 51 increases in a substantially step - function manner at current amounts Iin2 and Iin1 (<Iin2) due to the application of a strong bias magnetic field and a weak bias magnetic field respectively. Type III + (1), III + (2) The blocks of the magnetoresistive element 51 are located on the arm 24c 1 and a magnetic field of almost maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. Type III + (1), III + (2) The magnetoresistance of the magnetoresistive element 51 decreases (increases in the negative direction) in a substantially step - function manner at current amounts - Iin2 and - Iin1 (> - Iin2) due to the application of a strong bias magnetic field and a weak bias magnetic field respectively.

[0123] Fig. 19B shows the characteristics of the change in magnetoresistance ΔR with respect to the current amount Iin exhibited by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2) in Fig. 19A. Type I + (1), I +The magnetoresistive elements 51 in (2) each have a weak and the weakest sensitivity with respect to the current amount Iin when a medium-strength and minimum-strength magnetic field generated by the measured current Iin is applied, and are magnetically saturated at current amounts Iin1 and Iin2 or more, and are also magnetically saturated at current amounts -Iin1 and -Iin2 or less. Type II + (1), II + The magnetoresistive element 51 in (2) has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum strength is applied, and the magnetoresistance increases in a substantially stepwise manner and magnetically saturates at current amounts Iin2 and Iin1 (<Iin2) or more. Type III + (1), III + The magnetoresistive element 51 in (2) has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum strength is applied, and the magnetoresistance decreases (increases in the negative direction) in a substantially stepwise manner and magnetically saturates at current amounts -Iin2 and -Iin1 (>-Iin2) or less.

[0124] The magnetoresistance change ΔR(total) of the magnetic sensors 60 and 60h (each of the resistance sides R1 to R4 or R1 and R2) is of six types I + (1), I + (2), II + (1), II + (2), III + (1), III + It is given by the linear sum of the magnetoresistances of the magnetoresistive elements 51 in (2). Therefore, the magnetoresistance change ΔR increases with a strong sensitivity (i.e., a large slope) in the range of current amounts 0 to Iin1 with respect to the positive measured current Iin, increases in a substantially stepwise manner at the current amount Iin1, increases with a weak sensitivity (small slope) in the range of current amounts Iin1 to Iin2, and increases in a substantially stepwise manner at the current amount Iin2 and magnetically saturates. Also, the magnetoresistance change ΔR decreases (increases in the negative direction) with a strong sensitivity (i.e., a large slope) in the range of current amounts 0 to -Iin1 with respect to the negative measured current Iin, decreases (increases in the negative direction) in a substantially stepwise manner at the current amount -Iin1, decreases (increases in the negative direction) with a weak sensitivity (small slope) in the range of current amounts -Iin1 to -Iin2, and decreases (increases in the negative direction) in a substantially stepwise manner at the current amount -Iin2 and magnetically saturates.

[0125] Figure 20A shows the type and block arrangement of the magnetoresistive element 51 that exhibits (b) bipolar symmetry and (4) an arbitrary increasing characteristic. In this example, on the upper surface of the substrate 61, six blocks in which the magnetoresistive elements 51 of type I + (1), I + (2), II - (1), II - (2), III - (1), III - (2) are arranged respectively. The blocks of the magnetoresistive element 51 of type I + (1), I + (2) are located between the arms 24c of the conductor 24 1 , 24c 2 on the side of the arm 24c and on the side of the reference axis L, and medium and minimum intensity magnetic fields generated by the measured current Iin are applied to those magnetoresistive elements 51 respectively. The magnetoresistance of the magnetoresistive element 51 of type I 1 (1), I + (2) varies linearly with the current amount Iin, magnetically saturates at current amounts Iin1, Iin3 or more respectively, and magnetically saturates at current amounts -Iin1, -Iin3 or less. The blocks of the magnetoresistive element 51 of type II + (1), II - (2) are located on the arm 24c - (2), and a magnetic field of almost maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. The magnetoresistance of the magnetoresistive element 51 of type II 1 (1), II - (2) decreases (increases in the negative direction) in a step function manner at current amounts Iin2, Iin1 (<Iin2) respectively due to the application of a strong bias magnetic field and a weak bias magnetic field. The blocks of the magnetoresistive element 51 of type III - (1), III - (2) are located on the arm 24c - (2), and a magnetic field of almost maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. The magnetoresistance of the magnetoresistive element 51 of type III 1 (1), III - (2) are located on the arm 24c -The magnetoresistance of the magnetoresistive element 51 in (2) increases stepwise with current amounts -Iin2 and -Iin1 (> -Iin2) due to the application of a strong bias magnetic field and a weak bias magnetic field, respectively.

[0126] Fig. 20B shows the characteristics of the change in magnetoresistance ΔR with respect to the current amount Iin exhibited by each block of the magnetoresistive element 51 in Fig. 20A and the magnetic sensors 60 and 60h (each resistive side R1 to R4 or R1 and R2). Type I + (1), I + The magnetoresistive element 51 in (2) has weak and the weakest sensitivities with respect to the current amount Iin due to the application of magnetic fields of medium and minimum intensities generated by the current to be measured Iin, respectively, and magnetically saturates at current amounts Iin1 and Iin3 or more, and also magnetically saturates at current amounts -Iin1 and -Iin3 or less. Type II - (1), II - The magnetoresistive element 51 in (2) has the strongest sensitivity with respect to the current amount Iin due to the application of a magnetic field of maximum intensity, and magnetically saturates with the magnetoresistance decreasing stepwise (increasing in the negative direction) at current amounts Iin2 and Iin1 (< Iin2) or more, respectively. Type III - (1), III - The magnetoresistive element 51 in (2) has the strongest sensitivity with respect to the current amount Iin due to the application of a magnetic field of maximum intensity, and magnetically saturates with the magnetoresistance increasing stepwise at current amounts -Iin2 and -Iin1 (> -Iin2) or less, respectively.

[0127] The change in magnetoresistance ΔR(total) of the magnetic sensors 60 and 60h (each resistive side R1 to R4 or R1 and R2) is six types of Type I + (1), I + (2), II - (1), II - (2), III - (1), III -It is given by the linear sum of the magnetoresistances of the magnetoresistive elements 51 in (2). Therefore, the magnetoresistance change ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to Iin1 for a positive measured current Iin, decreases stepwise at the current amount Iin1, increases with a weak sensitivity (small slope) in the range of current amounts Iin1 to Iin2, decreases stepwise at the current amount Iin2, increases again with a weak sensitivity (small slope) in the range of current amounts Iin2 to Iin3, and saturates magnetically at a current amount Iin3 or more. Also, the magnetoresistance change ΔR decreases (increases in the negative direction) with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to -Iin1 for a negative measured current Iin, increases stepwise at the current amount -Iin1, decreases (increases in the negative direction) with a weak sensitivity (small slope) in the range of current amounts -Iin1 to -Iin2, increases stepwise at the current amount -Iin2, decreases (increases in the negative direction) again with a weak sensitivity (small slope) in the range of current amounts -Iin2 to -Iin3, and saturates magnetically at a current amount -Iin3 or less.

[0128] Note that in order to reverse the positive and negative of the behavior of the bipolar-symmetric magnetoresistance change ΔR (i.e., the output voltage Vout) (ΔR(Iin) → -ΔR(Iin)), for type I + , II - , III - the magnetoresistive elements 51 may be replaced with those of type I - , II + , III + respectively.

[0129] FIG. 21A shows, in (a), the types and block arrangements of magnetoresistive elements exhibiting unipolar and (1) logarithmic increase characteristics. In this example, on the upper surface of the substrate 61, three blocks in which the magnetoresistive elements 51 of type II + (1) to II + (3) are respectively arranged are arrayed in the X-axis direction. The magnetoresistive elements 51 of type II + (1) to II + (3) each have their magnetoresistances varied for a positive current amount Iin by applying mutually equal bias magnetic fields, and saturate magnetically at current amounts Iin1, Iin2, Iin3 (Iin1 < Iin2 < Iin3) or more. Type II+ (1) The block of the magnetoresistive element 51 is on the center line of the arm 24c of the conductor 24 1 , and the maximum-intensity magnetic field generated by the measured current Iin passed through the conductor 24 is applied to those magnetoresistive elements 51, type II + (2) The block of the magnetoresistive element 51 is located on the inner side of the arm 24c 1 , and the medium-intensity magnetic field generated by the measured current Iin is applied to those magnetoresistive elements 51, type II + (3) The block of the magnetoresistive element 51 is located between the arm 24c 1 , 24c 2 , and the minimum-intensity magnetic field generated by the measured current Iin is applied to those magnetoresistive elements 51.

[0130] Fig. 21B shows the characteristics of the magnetoresistance change ΔR with respect to the energization amount Iin exhibited by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistance side R1 to R4 or R1, R2) in Fig. 21A. Type II + (1) The magnetoresistive element 51 has the strongest sensitivity with respect to a positive current amount Iin when the maximum-intensity magnetic field generated by the measured current Iin is applied, varies its magnetoresistance at a current amount of zero or more, and saturates magnetically at a current amount of Iin1 or more. Type II + (2) The magnetoresistive element 51 has a medium sensitivity with respect to a positive current amount Iin when a medium-intensity magnetic field is applied, varies its magnetoresistance at a current amount of zero or more, and saturates magnetically at a current amount of Iin2 (>Iin1) or more. Type II + (3) The magnetoresistive element 51 has the weakest sensitivity with respect to a positive current amount Iin when the minimum-intensity magnetic field is applied, varies its magnetoresistance at a current amount of zero or more, and saturates magnetically at a current amount of Iin3 (>Iin2) or more.

[0131] The total magnetoresistance change ΔR of the magnetic sensors 60, 60h (each resistance side R1 to R4 or R1, R2) is for three types II + (1) to II +(3) The magnetic resistance is given by the linear sum of the magnetic resistances of the magnetoresistive elements 51. Therefore, the magnetic resistance change ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to Iin1 for a positive measured current Iin, increases with a medium sensitivity (medium slope) in the range of current amounts Iin1 to Iin2, increases with the weakest sensitivity (minimum slope) in the range of current amounts Iin2 to Iin3, and saturates magnetically at a current amount of Iin3 or more. Note that the magnetic resistance change ΔR is zero for a negative current amount Iin.

[0132] Fig. 22A shows, in (a), the type and block arrangement of the magnetoresistive element 51 that has a single pole and exhibits (2) exponential increase characteristics. In this example, on the upper surface of the substrate 61, three blocks in which the magnetoresistive elements 51 of type II + (1) to II + (3) are respectively arranged are arrayed in the X-axis direction. Type II + The block of the magnetoresistive element 51 of type II 1 (1) is located on the center line of the arm 24c, and a magnetic field with the maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. Type II + The magnetic resistance of the magnetoresistive element 51 of type II + (1) varies at a current amount of Iin2 or more due to the application of a strong bias magnetic field and saturates magnetically at a current amount of Iin3 or more. Type II 1 The block of the magnetoresistive element 51 of type II + (2) is located on the inner side of the arm 24c, and a medium magnetic field generated by the measured current Iin is applied to those magnetoresistive elements 51. Type II + The magnetic resistance of the magnetoresistive element 51 of type II 1 , 24c 2 (2) varies at a current amount of Iin1 (<Iin2) or more due to the application of a medium bias magnetic field and saturates magnetically at a current amount of Iin3 or more. Type II +The magnetoresistance of the magnetoresistive element 51 in (3) varies with respect to a current amount Iin of zero or more because a weak bias magnetic field is applied, and magnetically saturates at a current amount Iin of 3 or more.

[0133] Fig. 22B shows the characteristics of the change in magnetoresistance ΔR with respect to the current amount Iin exhibited by each block of the magnetoresistive element 51 in Fig. 22A and the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2). Type II + The magnetoresistive element 51 in (1) has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, varies its magnetoresistance at a current amount Iin of 2 or more, and magnetically saturates at a current amount Iin of 3 or more. Type II + The magnetoresistive element 51 in (2) has a medium sensitivity with respect to the current amount Iin when a medium-intensity magnetic field is applied, varies its magnetoresistance at a current amount Iin of 1 (<Iin2) or more, and magnetically saturates at a current amount Iin of 3 or more. Type II + The magnetoresistive element 51 in (3) has the weakest sensitivity with respect to the current amount Iin when a magnetic field of the minimum intensity generated by the current Iin to be measured is applied, varies its magnetoresistance at a current amount of zero or more, and magnetically saturates at a current amount Iin of 3 or more.

[0134] The change in magnetoresistance ΔR(total) of the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2) is given by the linear sum of the magnetoresistances of the three types II + (1) to II + The change in magnetoresistance ΔR is given by the linear sum of the magnetoresistances of the magnetoresistive elements 51 in (1) to (3). Therefore, the change in magnetoresistance ΔR increases with the weakest sensitivity (i.e., the smallest slope) in the range of current amount 0 to Iin1, increases with a medium sensitivity (medium slope) in the range of current amount Iin1 to Iin2, increases with the strongest sensitivity (maximum slope) in the range of current amount Iin2 to Iin3, and magnetically saturates at a current amount Iin of 3 or more with respect to a positive current Iin to be measured. Note that the change in magnetoresistance ΔR is zero with respect to a negative current amount Iin.

[0135] Fig. 23A shows the type and block arrangement of the magnetoresistive element 51 that exhibits (a) a single-pole and (3) monotonically increasing characteristics. In this example, on the upper surface of the substrate 61, type II + (1) to II+ (4) The four blocks in which the magnetoresistive elements 51 are respectively arranged are arranged in the X-axis direction. Type II + (1), II + (2) The blocks of the magnetoresistive elements 51 are located on the arm 24c 1 and a magnetic field with substantially maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. Type II + (1), II + (2) The magnetoresistance of the magnetoresistive elements 51 increases in a substantially step function manner at current amounts Iin2 and Iin1 (<Iin2) respectively due to the application of a strong bias magnetic field and a medium bias magnetic field. Type II + (3), II + (4) The blocks of the magnetoresistive elements 51 are located on the side of the arm 24c 1 , 24c 2 between the arm 24c 1 side and the reference axis L side, and a medium-intensity and the smallest-intensity magnetic field generated by the measured current Iin are applied to those magnetoresistive elements 51 respectively. Type II + (3), II + (4) The magnetoresistance of the magnetoresistive elements 51 varies linearly with respect to a current amount Iin of zero or more due to the application of a weak bias magnetic field, and magnetically saturates at current amounts Iin1 and Iin2 or more respectively.

[0136] Fig. 23B shows the characteristics of the change in magnetoresistance ΔR with respect to the energization amount Iin exhibited by each block of the magnetoresistive element 51 in Fig. 23A and the magnetic sensors 60, 60h (each resistance side R1 to R4 or R1, R2). Type II + (1), II + (2) The magnetoresistive elements 51 have the strongest sensitivity with respect to the current amount Iin due to the application of a magnetic field with the maximum intensity, and the magnetoresistance increases in a substantially step function manner and magnetically saturates at current amounts Iin2 and Iin1 (<Iin2) or more respectively. Type II + (3), II +The magnetoresistive elements 51 in (4) each have a weak and the weakest sensitivity with respect to the current amount Iin by being applied with a medium-strength and minimum-strength magnetic field generated by the measured current Iin, vary the magnetoresistance at a current amount of zero or more, and magnetically saturate at a current amount of Iin1, Iin2 (>Iin1) or more, respectively.

[0137] The magnetoresistance change ΔR(total) of the magnetic sensors 60, 60h (each resistance side R1 to R4 or R1, R2) is of four types II + (1) to II + The magnetoresistance change ΔR is given by the linear sum of the magnetoresistances of the magnetoresistive elements 51 in (4). Therefore, with respect to the positive measured current Iin, the magnetoresistance change ΔR increases with a strong sensitivity (i.e., a large slope) in the range of the current amount from 0 to Iin1, increases substantially in a step function manner at the current amount Iin1, increases with a weak sensitivity (a small slope) in the range of the current amount from Iin1 to Iin2, and increases substantially in a step function manner at the current amount Iin2 to magnetically saturate. Note that the magnetoresistance change ΔR is zero with respect to the negative current amount Iin.

[0138] Fig. 24A shows the type and block arrangement of the magnetoresistive element 51 exhibiting (a) a single-pole and (4) an arbitrary increasing characteristic. In this example, on the upper surface of the substrate 61, four blocks in which the magnetoresistive elements 51 of type II - (1), II - (2), II + (3), II + (4) are respectively arranged are arrayed in the X-axis direction. The blocks of the magnetoresistive elements 51 of type II - (1), II - The blocks of the magnetoresistive elements 51 of (2) are located on the arm 24c 1 and a magnetic field of substantially maximum strength generated by the measured current Iin is applied to these magnetoresistive elements 51. The magnetoresistances of the magnetoresistive elements 51 of type II - (1), II - (2) decrease (increase in the negative direction) in a step function manner at the current amounts Iin2, Iin1 (<Iin2) by being applied with a strong bias magnetic field and a medium bias magnetic field, respectively. The blocks of the magnetoresistive elements 51 of type II + (3), II + (4) are on the arm 24c of the conductor 241 , 24c 2 Between them, the arm 24c 1 Is located on the side and the reference axis L side respectively, and medium and the smallest intensity magnetic fields generated by the measured current Iin are applied to those magnetoresistive elements 51 respectively. Type II + (3), II + (4) The magnetoresistance of the magnetoresistive element 51 varies linearly with respect to the current amount Iin of zero or more because a weak bias magnetic field is applied, and magnetic saturation occurs respectively at the current amounts Iin1 and Iin3 (>Iin2>Iin1) or more.

[0139] Fig. 24B shows the characteristics of the magnetoresistance change ΔR with respect to the energization amount Iin exhibited by each block of the magnetoresistive element 51 in Fig. 24A and the magnetic sensors 60 and 60h (each resistance side R1 to R4 or R1 and R2). Type II - (1), II - (2) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin when the maximum intensity magnetic field is applied, and the magnetoresistance decreases (increases in the negative direction) in a step function manner and magnetic saturation occurs respectively at the current amounts Iin2 and Iin1 (<Iin2) or more. Type II + (3), II + (4) The magnetoresistive element 51 has weak and the weakest sensitivity with respect to the current amount Iin when the medium intensity and the minimum intensity magnetic fields generated by the measured current Iin are applied respectively, the magnetoresistance varies with the current amount Iin of zero or more, and magnetic saturation occurs respectively at the current amounts Iin1 and Iin3 (>Iin1) or more.

[0140] The magnetoresistance change ΔR(total) of the magnetic sensors 60 and 60h (each resistance side R1 to R4 or R1 and R2) is for four types II - (1), II - (2), II + (3), II +It is given by the linear sum of the magnetoresistances of the magnetoresistive elements 51 in (4). Therefore, the magnetoresistance change ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to Iin1 for a positive measured current Iin, decreases stepwise at the current amount Iin1, increases with a weak sensitivity (small slope) in the range of current amounts Iin1 to Iin2, decreases stepwise at the current amount Iin2, increases again with a weak sensitivity (small slope) in the range of current amounts Iin2 to Iin3, and saturates magnetically at a current amount of Iin3 or more. Note that the magnetoresistance change ΔR is zero for a negative current amount Iin.

[0141] Note that in order to reverse the sign of the behavior of the magnetoresistance change ΔR (i.e., the output voltage Vout) of the above-mentioned (a) unipolar characteristic (ΔR(Iin) → -ΔR(Iin)), type II - , II + magnetoresistive elements 51 may be replaced with type II + , II - magnetoresistive elements 51, respectively.

[0142] Note that in order to reproduce the magnetoresistance change ΔR (i.e., the output voltage Vout) showing the (a) unipolar characteristic for a negative current amount (ΔR(Iin) → -ΔR(-Iin)), instead of the above-mentioned type II + (or type II - ) magnetoresistive element 51, a type III + (or type III - ) magnetoresistive element 51 to which a bias magnetic field is similarly applied may be used.

[0143] Fig. 25A shows the type and block arrangement of the magnetoresistive element 51 exhibiting (c) bipolar asymmetry and (3) monotonically increasing characteristics. In this example, on the upper surface of the substrate 61, two blocks in which the magnetoresistive elements 51 of type II + , III - are respectively arranged are arrayed. The block of the magnetoresistive element 51 of type II + is located on the arm 24c 1 and a magnetic field of almost maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. The magnetoresistive element 51 of type II +The magnetoresistance of the magnetoresistive element 51 varies with respect to a current amount Iin of zero or more because a weak bias magnetic field is applied, and saturates magnetically at a current amount Iin1 or more. Type III - The block of the magnetoresistive element 51 is on the arm 24c 1 and is located above, and similar to the magnetoresistive element 51 of Type II + a magnetic field of almost maximum intensity generated by the current to be measured Iin is applied to those magnetoresistive elements 51. Type III - The magnetoresistance of the magnetoresistive element 51 varies with respect to a current amount Iin of zero or less because a weak bias magnetic field is applied, and saturates magnetically at a current amount -Iin1 or less.

[0144] Fig. 25B shows the characteristics of the change in magnetoresistance ΔR with respect to the energization amount Iin exhibited by each block of the magnetoresistive element 51 in Fig. 25A and the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2). Type II + The magnetoresistive element 51 has a strong sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity generated by the current to be measured Iin is applied, varies its magnetoresistance with respect to a positive current, and saturates magnetically at a current amount Iin1 or more. Type III - The magnetoresistive element 51 has a strong sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity generated by the current to be measured Iin is applied, varies its magnetoresistance with respect to a negative current, and saturates magnetically at a current amount -Iin1 or less.

[0145] The change in magnetoresistance ΔR(total) of the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2) is given by the linear sum of the magnetoresistances of two magnetoresistive elements 51 of Type II + , III - Thus, the change in magnetoresistance ΔR increases with a strong sensitivity (i.e., a large slope) with respect to a positive current to be measured Iin and saturates magnetically at a current amount Iin1 or more. Also, the change in magnetoresistance ΔR increases with a strong sensitivity (i.e., a large slope) with respect to a negative current to be measured Iin and saturates magnetically at a current amount -Iin3 or less.

[0146] Fig. 26A shows the type and block arrangement of the magnetoresistive element 51 that exhibits (c) bipolar asymmetry and (3) a monotonically increasing characteristic. In this example, on the upper surface of the substrate 61, five blocks are arranged in which the magnetoresistive elements 51 of type II + (1)~II + (4),III + are respectively disposed. The blocks of the magnetoresistive elements 51 of type II + (1),II + (2) are located on the center line of the arm 24c 1 and the magnetic field with the maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. The magnetoresistance of the magnetoresistive elements 51 of type II + (1),II + (2) increases in a stepwise manner at the current amounts Iin2, Iin1 (<Iin2) due to the application of the strong bias magnetic field and the medium bias magnetic field, respectively. The blocks of the magnetoresistive elements 51 of type II + (3),II + (4) are located between the arms 24c 1 ,24c 2 of the conductor 24, on the arm 24c 1 side and the reference axis L side, respectively, and the medium and minimum intensity magnetic fields generated by the measured current Iin are applied to those magnetoresistive elements 51, respectively. The magnetoresistance of the magnetoresistive elements 51 of type II + (3),II + (4) varies linearly with respect to the current amount Iin of zero or more due to the application of the weak bias magnetic field and magnetically saturates at the current amounts Iin1, Iin2 (>Iin1), respectively. The blocks of the magnetoresistive elements 51 of type III + are located on the center line of the arm 24c 1 and the magnetic field with the maximum intensity generated by the measured current Iin is applied to those magnetoresistive elements 51. The magnetoresistance of the magnetoresistive elements 51 of type III + decreases in a stepwise manner (increases in the negative direction) at the current amount -Iin3 due to the application of the bias magnetic field.

[0147] Fig. 26B shows the characteristics of the change in magnetoresistance ΔR with respect to the input current Iin exhibited by each block of the magnetoresistive element 51 and the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2) in Fig. 26A. Type II + (1), II + (2) The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, and the magnetoresistance increases stepwise and saturates magnetically at current amounts Iin2, Iin1 (<Iin2) or more, respectively. Type II + (3), II + (4) The magnetoresistive element 51 has weak and the weakest sensitivities with respect to the current amount Iin when magnetic fields of medium and minimum intensities generated by the measured current Iin are applied, respectively, the magnetoresistance fluctuates at current amounts of zero or more, and magnetically saturates at current amounts Iin1, Iin2 (>Iin1) or more, respectively. Type III + The magnetoresistive element 51 has the strongest sensitivity with respect to the current amount Iin when a magnetic field of maximum intensity is applied, and the magnetoresistance decreases stepwise (increases in the negative direction) and magnetically saturates at current amounts of -Iin3 or less.

[0148] The change in magnetoresistance ΔR(total) of the magnetic sensors 60, 60h (each resistive side R1 to R4 or R1, R2) is given by the linear sum of the magnetoresistances of five Type II + (1) to II + (4), III + of the magnetoresistive elements 51. Therefore, the change in magnetoresistance ΔR increases with the strongest sensitivity (i.e., the maximum slope) in the range of current amounts 0 to Iin1 for a positive measured current Iin, increases stepwise at current amount Iin1, increases with a weak sensitivity (small slope) in the range of current amounts Iin1 to Iin2, and increases stepwise at current amount Iin2 to magnetically saturate. The change in magnetoresistance ΔR is zero in the range of current amounts 0 to -Iin1 for a negative measured current Iin, and decreases stepwise (increases in the negative direction) at current amount -Iin1 to magnetically saturate.

[0149] Note that in order to reverse the positive and negative behavior of the above-mentioned (c) bipolar asymmetric magnetoresistance change ΔR (i.e., output voltage Vout) (ΔR(Iin) → -ΔR(Iin)), Type I+ , II + , III + The magnetoresistive elements 51 of + are respectively of type I - , II - , III - may be replaced by the magnetoresistive elements 51 of - .

[0150] In addition, in order to reproduce the magnetoresistance change ΔR (that is, the output voltage Vout) showing the bipolar asymmetric characteristic with respect to the negative current amount (ΔR(Iin) → -ΔR(-Iin)), the above-mentioned type II + (or type II - ) of the magnetoresistive element 51 may be replaced by the magnetoresistive element 51 of III + (or type III - ) to which a bias magnetic field is similarly applied.

[0151] A method for manufacturing the current sensor 110 will be described.

[0152] As shown in FIG. 27A, first, a single metal plate is press-worked to form patterns of a plurality of device terminals 17 and conductors 24. This pattern includes connecting the plurality of device terminals 17 and conductors 24 with their terminal portions inside a rectangular frame (not shown).

[0153] Next, a stepped process is performed on the pattern to provide steps to the plurality of device terminals 17 and conductors 24. Thereby, the inner part of the pattern is raised with respect to the frame and their terminal portions connected to the frame.

[0154] As shown in FIG. 27B, next, the magnetic sensor 60 is installed. Here, the two magnetoelectric conversion units 62, 63 are respectively on the arms 24c 1 , 24c 2 of the conductor 24.

[0155] As shown in FIG. 27C, next, the magnetic sensor 60 and the plurality of device terminals 17 are connected by wire bonding.

[0156] Next, as shown in FIG. 27D, the pattern is molded leaving the frame and the terminal portions of the plurality of device terminals 17 and conductors 24 connected thereto. Thereby, the package 9 is formed, and the magnetic sensor 60 and the inner portion of the pattern are sealed therein.

[0157] Finally, the frame exposed from the package 9 is cut from the pattern. Thereby, the plurality of device terminals 17 and the conductors 24 are separated from each other, and the current sensor 110 is completed.

[0158] The magnetic sensors 60, 60h according to the present embodiment include a substrate 61 installed on the conductor 24, and a plurality of blocks including first blocks 62a, 63a and second blocks 62b, 63b that are respectively located near and far from the center line of the conductor 24 relative to each other on one surface. A plurality of magnetoresistive elements 51 disposed on the substrate 61, a part of the plurality of magnetoresistive elements 51 being disposed in the first blocks 62a, 63a and another part being disposed in the second blocks 62b, 63b. Each of the first blocks 62a, 63a and the second blocks 62b, 63b includes a first sub-block 62a 1 , 63a 1 , 62b 1 , 63b 1 in which magnetoresistive elements 51 having a magnetization direction in the same direction are disposed, and the magnetoresistive elements 51 in the first sub-blocks 62a 1 , 63a 1 of the first blocks 62a, 63a and the magnetoresistive elements 51 in the first sub-blocks 62b 1 , 63b 1 of the second blocks 62b, 63b are connected in series to form a resistance side R1.

[0159] According to this, the magnetoresistive elements 51 in the first sub-blocks 62a 1 , 63a 1 of the first blocks 62a, 63a having a magnetization direction in the same direction and connected in series to form the resistance side R1 and the magnetoresistive elements 51 in the first sub-blocks 62b 1 , 63b 1Of the magnetoresistive elements 51 inside, the former is located relatively near the center line of the conductor 24 on one surface of the substrate 61, and thus exhibits high sensitivity to the magnetic field generated by energizing the conductor 24. The latter is located relatively far from the center line of the conductor 24, and thus exhibits low sensitivity to the magnetic field generated by energizing the conductor 24. As a result, when the amount of current flowing through the conductor 24 is equal to or less than the amount that generates a magnetic field equal to the saturation magnetic field of the magnetoresistive element 51 at the positions of the first blocks 62a and 63a, the resistance side R1 exhibits strong linearity having the sum of the sensitivities of the magnetoresistive elements 51 in the first blocks 62a and 63a and the sensitivities of the magnetoresistive elements 51 in the second blocks 62b and 63b. When the amount of current flowing through the conductor 24 generates a magnetic field exceeding the saturation magnetic field at the positions of the first blocks 62a and 63a and equal to or less than the amount that generates a magnetic field equal to the saturation magnetic field at the positions of the second blocks 62b and 63b, the resistance side R1 exhibits weak linearity equal to the sensitivity of the magnetoresistive element 51 in the second blocks 62b and 63b. Thus, a magnetic sensor 60, 60h having multiple linearities with respect to the magnetic field intensity can be realized.

[0160] The current sensor 110 according to this embodiment includes a conductor 24, magnetic sensors 60, 60h, and a package 9 that seals the conductor 24 and the magnetic sensor 60. By using the magnetic sensors 60, 60h, a current sensor having multiple linearities can be configured.

[0161] Note that although the magnetic sensor 60 is configured to include two magnetoelectric conversion units 62, 63, it may be configured to include only one of the magnetoelectric conversion units 62, 63 instead.

[0162] Note that the magnetic field detection directions (i.e., the magnetic sensing directions) of the resistance sides R1 to R8 (magnetoresistive elements 51) included in the two magnetoelectric conversion units 62, 63 of the magnetic sensor 60 are set to be perpendicular to the upper surface of the conductor 24, and one of the two magnetoelectric conversion units 62, 63 may be disposed in the gap region surrounded by the curved portion 24c of the conductor 24. Thereby, the magnetic sensor 60 can detect a vertical magnetic field (in this example, the magnetic field in the Z-axis direction in FIG. 1A). Also, the other of the two magnetoelectric conversion units 62, 63 is disposed on the two arms 24c 1 , 24c 2It may be arranged near one outer side thereof. Thereby, an external disturbance magnetic field can be canceled.

[0163] FIG. 28 shows a top view of the internal configuration of the current sensor 120 according to a modified example. In addition to the components included in the aforementioned current sensor 110, the current sensor 120 further includes a signal processing circuit 44 that processes a detection signal of a magnetic sensor 60 (for example, resistance variation such as the resistance side R1) and calculates the amount of the measured current energized to the conductor 24. The signal processing circuit 44 may incorporate a memory, a sensitivity correction circuit, an offset correction circuit that corrects the offset of the output, an amplification circuit that amplifies the output signal from the magnetic sensor 60, and a temperature correction circuit that corrects the output according to the temperature. The signal processing circuit 44 is disposed on the substrate 61 of the magnetic sensor 60, uses electrode pads (not shown) on the substrate 61 as input / output terminals of the signal processing circuit 44, and is connected by wire bonding to a plurality of device terminals 17. Thereby, the signal processing circuit 44 outputs the calculation result of the amount of the measured current energized to the conductor 24 via the plurality of device terminals 17.

[0164] As described above, the present invention has been described using the embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the description of the claims that the forms with such changes or improvements can also be included in the technical scope of the present invention.

[0165] It should be noted that the execution order of each process such as operations, procedures, steps, and stages in the devices, systems, programs, and methods shown in the claims, the specification, and the drawings is not explicitly stated as "earlier" or "preceding" etc., and can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the specification, and the drawings, even if it is described using "first," "next," etc. for convenience, it does not mean that it is essential to be implemented in this order.

Explanation of Reference Numerals

[0166] 9… Package, 17… Device terminal, 17a… Terminal part, 24… Conductor, 24a, 24e… Terminal part (current terminal), 24b, 24d… Body part, 24c… Bend part, 24c 1 , 24c 2 … Arm, 24c 3 … Connecting part, 44… Signal processing circuit, 51… Magnetoresistive element, 51o… Fixed layer, 51p… Tunnel layer, 51q… Free layer, 51r… Cap layer, 51s… Electrode bar, 52, 53… Electrode piece, 60, 60h… Magnetic sensor, 61… Substrate, 62, 63… Magnetoelectric conversion part, 62a~62d… Blocks, 62a 1 ~62a 4 , 62b 1 ~62b 4 , 62c 1 ~62c 4 , 62d 1 ~62d 4 , 63a 1 ~63a 4 , 63b 1 ~63b 4 … Sub-block, 63… Magnetoelectric conversion part, 110, 120… Current sensor, L… Reference line, GND… Ground terminal, Np2, Np3, Np21, Np22, Np31, Np32… Output terminals, R1~R8… Resistive sides, VDD… Drive terminal.

Claims

1. A substrate is provided on a conductor, the substrate having a surface on which a plurality of blocks are disposed, the first block and the second block being located near and remote from a center line of the conductor, respectively, in a plan view, relative to each other; a plurality of magnetoresistive elements disposed on the substrate, a portion of the plurality of magnetoresistive elements being disposed within the first block and another portion being disposed within the second block; each of the first block and the second block includes a first sub-block in which magnetoresistance elements having the same magnetic sensing direction are arranged, and the magnetoresistance elements in the first sub-block of the first block and the magnetoresistance elements in the first sub-block of the second block are connected in series to form a first resistance side.

2. Each of the first block and the second block further includes a second sub-block in which magnetoresistance elements having the same magnetic sensing direction and an opposite magnetic sensing direction to the magnetoresistance elements in the first sub-block are arranged, 2. The magnetic sensor of claim 1, wherein a magnetic resistance element in the second sub-block of the first block and a magnetic resistance element in the second sub-block of the second block are connected in series to form a second resistive edge, and the first resistive edge and the second resistive edge are connected in series.

3. Each of the first block and the second block further includes a third sub-block in which magnetoresistance elements having the same magnetic sensing direction as each other and the same magnetic sensing direction as the magnetoresistance elements in the first sub-block are arranged, and a fourth sub-block in which magnetoresistance elements having the same magnetic sensing direction as each other and the opposite magnetic sensing direction to the magnetoresistance elements in the first sub-block are arranged, a magnetoresistive element in the third sub-block of the first block and a magnetoresistive element in the third sub-block of the second block are connected in series to form a third resistive edge, a magnetoresistive element in the fourth sub-block of the first block and a magnetoresistive element in the fourth sub-block of the second block are connected in series to form a fourth resistive edge, 3. The magnetic sensor according to claim 2, wherein the third resistor arm and the fourth resistor arm are connected in series to each other and in parallel to the first resistor arm and the second resistor arm, and are assembled together with the first resistor arm and the second resistor arm into a Wheatstone bridge circuit.

4. the plurality of blocks further includes at least one extension block disposed on one surface of the substrate at a distance from the first block and the second block; a further portion of the plurality of magnetoresistive elements is disposed within the at least one extension block; the at least one extended block includes a first sub-block in which magnetoresistance elements are arranged, the magnetoresistance elements having the same magnetic sensing direction as each other and the same magnetic sensing direction as the magnetoresistance elements in the first sub-block of the first block; 2. The magnetic sensor of claim 1, wherein the first resistive side includes a magnetic resistance element in the first sub-block of the extended block connected in series with a magnetic resistance element in the first sub-block of the first block and a magnetic resistance element in the first sub-block of the second block.

5. Each of the first block, the second block, and the at least one extended block further includes a second sub-block in which magnetoresistance elements having the same magnetic sensitivity direction and an opposite magnetic sensitivity direction to the magnetoresistance elements in the first sub-block are arranged, 5. The magnetic sensor of claim 4, wherein a magnetic resistance element in the second sub-block of the first block, a magnetic resistance element in the second sub-block of the second block, and a magnetic resistance element in the second sub-block of the at least one extended block are connected in series to form a second resistive edge, and the first resistive edge and the second resistive edge are connected in series.

6. Each of the first block, the second block, and the at least one extended block further includes a third sub-block in which magnetoresistance elements having the same magnetic sensing direction as the magnetoresistance elements in the first sub-block are arranged, and a fourth sub-block in which magnetoresistance elements having the same magnetic sensing direction as the magnetoresistance elements in the first sub-block are arranged, and a third resistive edge is formed by serially connecting a magnetoresistive element in the third sub-block of the first block, a magnetoresistive element in the third sub-block of the second block, and a magnetoresistive element in the third sub-block of the at least one extended block; a fourth resistive edge is formed by serially connecting a magnetoresistive element in the fourth sub-block of the first block, a magnetoresistive element in the fourth sub-block of the second block, and a magnetoresistive element in the fourth sub-block of the at least one extended block; The magnetic sensor according to claim 5 , wherein the third resistor arm and the fourth resistor arm are connected in series to each other and in parallel to the first resistor arm and the second resistor arm, and are assembled together with the first resistor arm and the second resistor arm into a Wheatstone bridge circuit.

7. At least a portion of the first block is located on the conductor in a plan view, The magnetic sensor according to claim 1 , wherein at least a portion of the second block is located outside the conductor in a plan view.

8. At least a portion of the first block is located on the conductor in a plan view, The magnetic sensor according to claim 1 , wherein the second block is located outside the conductor in a plan view.

9. the first block is located on the conductor in a plan view, The magnetic sensor according to claim 1 , wherein at least a portion of the second block is located above the conductor in a plan view.

10. The magnetic sensor according to claim 1 , wherein the first block and the second block are arranged in a direction intersecting a current-carrying direction of the conductor.

11. The magnetic sensor according to claim 1 , wherein the plurality of magnetoresistance elements are tunneling magnetoresistance elements (TMR) or giant magnetoresistance elements (GMR).

12. The magnetic sensor of claim 10 , wherein at least one magnetoresistive element of the plurality of magnetoresistive elements has a free layer having a bias magnetic field applied thereto.

13. 13. The magnetic sensor of claim 12, wherein the bias magnetic field is applied by any one of magnetic coupling of an antiferromagnetic material to the free layer, magnetic coupling to the free layer, which is a ferromagnetic material, by a synthetic ferrimagnetic structure, which is a three-layer structure of ferromagnetic material / non-magnetic material / ferromagnetic material, by arranging a magnet near the free layer, and by arranging coil wiring near the free layer.

14. a magnetoresistive element disposed in at least two of the plurality of blocks has a free layer to which the bias magnetic field is applied; a magnetoresistive element disposed in at least two of the plurality of blocks has a free layer to which the bias magnetic field is not applied; The magnetic sensor of claim 12, wherein among the plurality of blocks, a block in which a magnetoresistance element having a free layer to which the bias magnetic field is not applied is arranged is positioned remote from the conductor relative to a block in which a magnetoresistance element having a free layer to which the bias magnetic field is applied is arranged.

15. The conductor has a U-shape, a C-shape, a π-shape, or a V-shape including two arms that are symmetrical or approximately symmetrical with respect to a reference line, The magnetic sensor according to claim 1 , wherein the first block and the second block are disposed on the two arms symmetrically with respect to the reference line.

16. The conductor has a U-shape, a C-shape, a π-shape, or a V-shape including two arms that are symmetrical or approximately symmetrical with respect to a reference line, the first block and the second block are disposed on each of the two arms symmetrically with respect to the reference line, The magnetic sensor according to claim 7 , wherein the second block is disposed on a side of the reference line relative to the first block.

17. The magnetic sensor according to claim 1 , further comprising a signal processing circuit disposed on the substrate and processing a detection signal of a resistance variation of the first resistor side.

18. A magnetic sensor according to any one of claims 1 to 17; The conductor through which the current to be measured flows; A current sensor comprising:

19. The conductor is a first arm, a second arm spaced apart from the first arm in a width direction, and a connecting portion connecting the first arm and the second arm; The first arm and the second arm extend on the same side relative to the connecting portion.

20. The current sensor of claim 18.

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