Method for manufacturing semiconductor device, semiconductor device identification method, and semiconductor device manufacturing system

Abstract

To provide a technology that can improve the fixation of marks for identity determination applied by ink in semiconductor devices.SOLUTION: A method for manufacturing a semiconductor device comprises a base layer forming process for forming the base layer formed of a curable resin composition on a semiconductor substrate, an ink marking process for applying an identity determination mark on the base layer using ink, which is used to determine the identity of the semiconductor device, and a curing process for curing the base layer after the ink marking process.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device, a method for determining the identity of a semiconductor device, and a manufacturing system for a semiconductor device.

Background Art

[0002] In the field of semiconductor devices, the distribution of counterfeit products has been a problem. Therefore, a technology that can determine whether a distributed product is the same as an authentic product has been demanded. For the determination of identity, it is conceivable to previously attach a mark unique to the semiconductor device (hereinafter referred to as an identity determination mark).

[0003] In relation to the above, Patent Document 1 (Japanese Patent Application Laid-Open No. 2007-242973) describes a semiconductor device in which a semiconductor circuit is encapsulated with a sealing resin, and includes a semiconductor circuit and a sealing resin having at least a surface with a marbled pattern that is different for each individual.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

[0005] By the way, the present inventors have been considering using a mark formed using ink as an identity determination mark. Even if the marks formed by ink have the same shape when observed visually, when observed in an enlarged manner, they have unique shapes for each mark. Utilizing this phenomenon, the present inventors have been considering using an enlarged image of a mark formed by ink for the determination of identity.

[0006] On the other hand, marks formed using ink have problems with fixability.

[0007] Accordingly, an object of the present invention is to provide a technique capable of enhancing the fixability of an identity determination mark attached with ink in a semiconductor device.

[0008] The inventors of the present invention have found that the above problems can be solved by devising the order of the steps of attaching the mark in the manufacturing process of the semiconductor device.

[0009] That is, on one aspect, the present invention relates to a method for manufacturing a semiconductor device. This manufacturing method includes a base layer forming step of forming a base layer formed of a curable resin composition on a semiconductor substrate, an ink marking step of applying an identity determination mark used for determining the identity of the semiconductor device with ink on the base layer, and a curing step of curing the base layer after the ink marking step.

[0010] On another aspect, the present invention relates to a method for determining the identity of a semiconductor device. This identity determination method includes a step of manufacturing an authentic product of the semiconductor device using the above manufacturing method, a step of imaging the identity determination mark during or after the manufacture of the authentic product and generating authentic product data indicating the identity determination mark of the authentic product, a step of imaging the identity determination mark of the semiconductor device to be a determination target product and generating determination target product data indicating the identity determination mark of the determination target product, and a step of determining whether the determination target product is the same as the authentic product based on the authentic product data and the determination target product data.

[0011] On still another aspect, the present invention relates to a manufacturing system for a semiconductor device. This manufacturing system includes a base layer forming device that forms a base layer formed of a curable resin composition on a semiconductor substrate, and an ink marking device that applies an identity determination mark used for determining the identity of the semiconductor device with ink on the base layer.

Brief Description of the Drawings

[0012]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Embodiments for Carrying Out the Invention

[0013] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0014] (1) Semiconductor device Figure 1 is a schematic diagram showing a semiconductor device 1 according to the present embodiment. The semiconductor device 1 has a semiconductor substrate 2 and an underlying layer 3 provided on the semiconductor substrate 2. An identity determination mark 4 is attached on the underlying layer 3. The semiconductor device 1 is, for example, a semiconductor chip.

[0015] Figure 2 is a diagram showing an example of the identity determination mark 4. Note that Figure 2 also shows an enlarged view of a part of the region of the identity determination mark 4.

[0016] The identity determination mark 4 is a mark attached by ink. The identity determination mark 4 is used to determine whether the semiconductor device 1 is identical to an authentic product. As described above, even if the marks attached by ink have the same shape visually, they have different shapes when observed under magnification. For example, when ink is supplied onto a substrate, the supplied ink spreads to some extent. The way the ink spreads is random. Also, for example, when a mark is attached using an inkjet method, the ink is supplied onto the substrate as droplets. The landing positions of the droplets in this case may be random when observed under magnification.

[0017] The above-mentioned randomness is used for identity determination. For example, during the manufacture of the semiconductor device 1, an enlarged image of the identity determination mark 4 is acquired in advance and stored as genuine product data. After the semiconductor device 1 is put on the market, when it is confirmed whether the distributed product is the same as the genuine product, an enlarged image of the identity determination mark 4 of the distributed product is acquired. Then, using the image of the distributed product as the data to be determined, it is compared with the genuine product data stored in advance. Thereby, it is possible to determine whether the distributed product is the same as the genuine product. Note that the genuine product data and the data to be determined may be the image data itself, but they do not necessarily have to be the image data itself. For example, the genuine product data and the data to be determined may be data indicating feature amounts extracted from the image data.

[0018] Also, the identity determination is not limited to the randomness of the shape of the identity determination mark 4. For example, when the ink contains a particulate pattern-forming substance, when the identity determination mark 4 is enlarged and observed, a random bright spot pattern caused by the reflected light of the pattern-forming substance or the like may be obtained. Thus, the randomness of the bright spot pattern may be used for identity determination.

[0019] Note that the identity determination mark 4 may be a mark having some information such as a lot number when observed visually, or may be a mark having no meaning. That is, the identity determination by the identity determination mark 4 is made not by the identification symbol constituted by the mark, but by comparing the information obtained from the unique image of the genuine product mark with the information obtained from the image of the mark of the product to be determined.

[0020] (2) Manufacturing method and identity determination method of semiconductor device Subsequently, the manufacturing method and identity determination method of the semiconductor device according to the present embodiment will be described. FIG. 3 is a flowchart schematically showing the manufacturing method of the semiconductor device 1 according to the present embodiment.

[0021] In this embodiment, as described above, in order to obtain randomness, the identification mark 4 is formed by ink. However, the identification mark 4 attached by ink has problems regarding fixability. In particular, when the enlarged image is used for identity determination, it is required that the identification mark 4 has high fixability such that peeling is not observed even when observed as an enlarged image. Therefore, the present inventors conducted studies to enhance the fixability of the identification mark 4. As a result, it was found that by forming the curable underlayer 3 and then performing ink marking before the underlayer 3 is cured, the fixability can be enhanced. If it is before the underlayer 3 is cured, the underlayer 3 has a certain degree of fluidity. Therefore, if ink is supplied to the underlayer 3 before curing, the ink and the underlayer 3 are likely to penetrate each other. As a result, it is considered that the ink easily binds to the underlayer 3 and the fixability of the identification mark 4 is enhanced.

[0022] That is, the method for manufacturing the semiconductor device 1 according to this embodiment has, as shown in FIG. 3, an underlayer formation step (step S1), an ink marking step (step S2), and a curing step (step S3). In the underlayer formation step (S1), the underlayer 3 is formed on the semiconductor substrate 2 by a curable resin composition. In the ink marking step (S2), the identification mark 4 is applied on the underlayer 3 by ink. In the curing step (S3), the underlayer 3 is cured. The curing step (S3) is performed after the ink marking step (S2). According to such a method, since the curing step (S3) is performed after the ink marking step (S2), the fixability of the identification mark 4 with respect to the underlayer 3 can be enhanced.

[0023] The above is the outline of this embodiment. Subsequently, the details of this embodiment will be described with reference to specific examples. FIG. 4 is a diagram showing a specific example of the method for manufacturing the semiconductor device 1.

[0024] (Step S1) Formation of the underlayer First, as shown in FIG. 4(a), a semiconductor substrate 2 is prepared. The semiconductor substrate 2 is, for example, a semiconductor wafer after back grinding is completed.

[0025] Next, as shown in FIG. 4(b), an underlayer 3 is formed on the semiconductor substrate 2. The underlayer 3 may be any layer that can serve as a base for the identity determination mark 4. In the present embodiment, the underlayer 3 is a resin layer (back surface resin layer) provided on the back surface of the semiconductor substrate 2 (the surface opposite to the circuit formation surface).

[0026] The underlayer 3 is formed of a curable resin composition. For example, a film for forming an underlayer (film for back surface resin layer) containing a curable resin composition is laminated on the back surface of the semiconductor substrate 2. Thereby, the underlayer 3 can be formed.

[0027] The curing type of the curable resin composition for forming the underlayer 3 may be thermosetting, energy ray curable (e.g., UV curable), or both. Since the film for forming the underlayer formed from an energy ray curable curable resin composition may need to achieve both energy ray transparency and the required optical properties of the underlayer, the curable resin composition is preferably thermosetting.

[0028] Details of the composition of the underlayer 3 and the like will be described later by way of example.

[0029] (Step S2) Ink Marking Subsequently, as shown in FIG. 4(c), an identity determination mark 4 is provided on the underlayer 3. As described above, the identity determination mark 4 is formed by ink. That is, the identity determination mark 4 is formed by applying ink on the underlayer 3.

[0030] The method of applying the identification mark 4 is not particularly limited. For example, as the application method, an inkjet method, a gravure coating method, etc. can be mentioned. Among these, the inkjet method is preferable. When the inkjet method is used, as shown in Fig. 4(c), the ink droplets 6 are sprayed onto the base layer 3. At this time, the landing position of the droplets 6 may be orderly or random when viewed in an enlarged manner. Also, the ink after landing spreads wet in a random shape. Therefore, the shape of the identification mark 4 observed when enlarged is likely to be a unique shape. As a result, it becomes easier to perform the identification of identity using the identification mark 4.

[0031] As the ink, preferably, a curable ink is used. The ink may be a thermosetting type or an energy ray curable type. Preferably, an energy ray curable type ink is used as the ink. More preferably, a UV curable type ink is used as the ink. Also, a particulate pattern forming substance is added to the ink as necessary.

[0032] When a curable ink is used, preferably, the ink is cured immediately after application (before the curing of the base layer 3).

[0033] In a more preferable embodiment, the curable resin composition constituting the base layer 3 is a thermosetting resin composition. On the other hand, the ink is an energy ray curable composition. And the curing of the ink is carried out before the curing (S3) of the base layer 3.

[0034] (Imaging) Subsequently, as shown in Fig. 4(d), the identification mark 4 is imaged. The identification mark 4 is imaged through a microscope. The size of the region to be imaged is not particularly limited. For example, the size of the region to be imaged is such that a region with one side being 10 to 1000 μm is included.

[0035] The microscope used for imaging is typically an optical microscope. The magnification during imaging when using an optical microscope is, for example, 20 to 500 times.

[0036] The image of the identification mark 4 obtained by imaging and the feature amount extracted from the image are stored, as genuine data indicating the genuine identification mark, in, for example, a server (not shown) or the like.

[0037] (Step S3) Curing Subsequently, as shown in FIG. 4(e), the underlayer 3 is cured. The underlayer 3 is cured by a method according to the curing type of the curable resin composition. That is, if the curing type of the underlayer 3 is thermosetting, a thermosetting process is carried out. If the curing type of the underlayer 3 is energy ray curable, a curing process by energy ray irradiation is carried out.

[0038] In addition, when the curing type of the underlayer 3 is thermosetting, the heating temperature in this step is, for example, 80 to 200 °C, preferably 100 to 160 °C. The heating time is, for example, 30 minutes to 5 hours, preferably 1 to 3 hours.

[0039] (Dicing, etc.) After the underlayer 3 is cured, necessary processing is carried out to obtain the semiconductor device 1. In the example shown in FIG. 4, as shown in FIG. 4(f), a dicing process is carried out. In the dicing process, the semiconductor substrate 2 is placed on the dicing sheet 10. The semiconductor substrate 2 is attached to the dicing sheet 10 such that, for example, the underlayer 3 faces the dicing sheet 10 side. That is, the identification mark 4 is attached to the dicing sheet 10 so as to be in contact with the dicing sheet 10. Then, the semiconductor substrate 2 is diced (individualized) using the blade 9.

[0040] After singulation, as shown in Fig. 4(g), each semiconductor chip 11 is picked up from the dicing sheet 10. Here, when the adhesion of the identification mark 4 for identity determination is low, the identification mark 4 for identity determination may adhere to the dicing sheet 10 and peel off from the underlying layer 3 during picking up. However, according to the present embodiment, the identification mark 4 for identity determination has high adhesion. Therefore, even when the semiconductor substrate 2 is attached so that the identification mark 4 for identity determination is in contact with the dicing sheet 10, the identification mark 4 for identity determination is difficult to peel off during picking up.

[0041] After picking up, a reliability test or the like is performed as necessary. After undergoing a reliability test or the like, the semiconductor chip is distributed on the market as a semiconductor device.

[0042] When it is desired to confirm whether the semiconductor device is genuine after distribution in the market, as shown in Fig. 4(h), the identification mark for identity determination of the distributed product (product to be determined) is imaged. The identification mark for identity determination of the distributed product is imaged using a microscope in the same manner as for the genuine product. Then, based on the data showing the image of the identification mark for identity determination of the distributed product or the feature amount (data of the product to be determined) extracted from the image, it is determined whether the distributed product is the same as the genuine product.

[0043] The above is the manufacturing method of the semiconductor device and the identity semiconductor method according to the present embodiment. According to the present embodiment, since ink marking is performed before the underlying layer 3 is cured, the adhesion of the identification mark 4 for identity determination can be enhanced. Thereby, the identity can be determined with high reliability.

[0044] (3) Manufacturing system of semiconductor device Note that the above-described manufacturing method of the semiconductor device can be realized by, for example, a manufacturing system of the semiconductor device. Fig. 5 is a configuration diagram showing an example of a manufacturing system 20 of the semiconductor device. This manufacturing system 20 of the semiconductor device includes an underlying layer forming device 21, an ink marking device 22, an imaging device 23, and a curing device 24.

[0045] The underlayer forming apparatus 21 is configured to form an underlayer 3 on a semiconductor substrate 2. The underlayer forming apparatus 21 is, for example, a laminating apparatus configured to laminate an underlayer forming film (a film for a back resin layer) on the back surface of the semiconductor substrate 2.

[0046] The ink marking apparatus 22 is configured to attach an identity determination mark with ink on the underlayer 3. The ink marking apparatus 22 is, for example, an inkjet printing apparatus.

[0047] The imaging apparatus 23 includes a microscope and is configured to image a fine region of the identity determination mark 4 through the microscope. The imaging apparatus 23 is, for example, a digital imaging apparatus with an optical microscope.

[0048] Further, the manufacturing system of the semiconductor device of the present embodiment may include a feature amount calculation apparatus (not shown) that calculates a predetermined feature amount from the image captured by the imaging apparatus 23. Examples of the feature amount calculated by the feature amount calculation apparatus include coordinates indicating the contour of the shape of the identity determination mark 4 magnified by the microscope, coordinates of each bright point in the bright point pattern indicated by the identity determination mark 4, and the like. Such feature amounts are used as feature amounts extracted from the image of the above-described genuine product.

[0049] The curing apparatus 24 is configured to cure the underlayer 3. When the curing type of the underlayer 3 is a heat-curing type, the curing apparatus 24 is a heating apparatus. When the curing type of the underlayer 3 is an energy ray-curing type (for example, a UV-curing type), the curing apparatus 24 is an energy ray irradiation apparatus (for example, a UV irradiation apparatus).

[0050] Some of the devices included in the above-described manufacturing system 20 may be provided integrally. For example, the underlayer forming device 21 and the ink marking device 22 may be provided integrally. By using such a manufacturing system, it becomes possible to perform the processes from the formation of the underlayer to the ink marking inline, and the productivity can be enhanced. Further, the underlayer forming device 21, the ink marking device 22, and the imaging device 23 may be provided integrally, or the underlayer forming device 21, the ink marking device 22, the imaging device 23, and the feature amount calculation device may be provided integrally.

[0051] When the curable resin composition for forming the underlayer 3 is thermosetting, the heating in the heating device as the curing device 24 often requires a time of about 30 minutes to 5 hours. Therefore, considering that the processing times of the underlayer forming device 21 and the ink marking device 22 are relatively short, there is difficulty in integrating the curing device 24 with the underlayer forming device 21 and the ink marking device 22. Therefore, when the underlayer 3 is cured prior to the ink marking, the offline of the curing device 24 through which the semiconductor substrate 2 passes between the underlayer forming device 21 and the ink marking device 22 may prevent the underlayer forming device 21 and the ink marking device 22 from being made inline. On the other hand, when the underlayer 3 is cured after the ink marking, after the formation of the underlayer and the ink marking are performed inline, the underlayer 3 may be cured offline, and it is easy to integrate the underlayer forming device 21 and the ink marking device 22.

[0052] (4) Others In this embodiment, the imaging of the authentication mark for the genuine product (see Fig. 4(d)) is described for the case where it is performed between the ink marking step (S2: Fig. 4(c)) and the curing step (S3: Fig. 4(e)). However, the imaging of the authentication mark 4 does not necessarily have to be performed before the curing step (S3). The imaging of the authentication mark 4 may be performed at any stage after the curing step (S3: Fig. 4(e)). When the underlayer 3 is thermosetting, by imaging the authentication mark 4 in the order before the curing step, the curing step, which is difficult to be made inline, is not sandwiched between steps, so in the manufacturing system of the semiconductor device described above, it is easy to integrate the underlayer forming device 21, the ink marking device 22, and the imaging device 23.

[0053] Also, in this embodiment, the case where the underlayer 3 is a back surface resin layer formed on the back surface of the semiconductor substrate 2 is described. However, the underlayer 3 is not limited to the back surface resin layer. For example, the underlayer 3 may be a sealing resin layer used as a so-called sealing resin.

[0054] On the other hand, preferably, the underlayer 3 is a back surface resin layer as described in the above embodiment. More preferably, the back surface resin layer is a resin layer formed by laminating an underlayer forming film (back surface resin layer forming film). Hereinafter, the case where the underlayer 3 is a back surface resin layer formed by an underlayer forming film will be described in detail for the back surface resin layer.

[0055] (5) Underlayer (Back Surface Resin Layer) The thickness of the back surface resin layer is not particularly limited, but for example, it is 1 to 100 μm, preferably 5 to 50 μm.

[0056] As described above, the curing type of the back surface resin layer may be a thermosetting type or an energy ray curing type, and preferably, it is a thermosetting type. Hereinafter, an example of the composition of the back surface resin layer in the case of being a thermosetting type will be described. In this case, the back surface resin layer is formed from a thermosetting curable resin composition.

[0057] When the curable resin composition is thermosetting, the curable resin composition contains, for example, a polymer component (A), a thermosetting component (B), a curing accelerator (C), a silane coupling agent (D), a colorant (E), and the like.

[0058] (A) Polymer component Examples of the polymer component (A) include acrylic resins (for example, resins obtained by addition polymerization of monomers containing at least acrylic acid ester monomers), polyesters, urethane resins (for example, resins having urethane bonds), acrylic urethane resins, silicone resins (for example, resins having siloxane bonds), rubber resins (for example, resins having rubber structures), and phenoxy resins. Among them, acrylic resins are preferred.

[0059] The content of the polymer component (A) is, for example, 5 to 50% by mass, preferably 10 to 40% by mass, more preferably 15 to 35% by mass, based on the total mass of the curable resin composition excluding the solvent.

[0060] (B) Thermosetting component Examples of the thermosetting component (B) include epoxy-based thermosetting resins, thermosetting polyimides, thermosetting polyurethanes, unsaturated polyesters, and silicone rubbers. Preferably, it is an epoxy-based thermosetting resin.

[0061] As the epoxy-based thermosetting resin, for example, those composed of an epoxy resin (B1) and a curing agent (B2) are used.

[0062] Examples of the epoxy resin (B1) include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolak epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, and other epoxy compounds having two or more functional groups. Among these, it is preferable that bisphenol A type epoxy resin is included.

[0063] The thermosetting agent (B2) is a substance that functions as a curing agent for the epoxy resin. Examples of the thermosetting agent include compounds having at least two functional groups capable of reacting with an epoxy group in one molecule. Examples of such functional groups include phenolic hydroxyl group, alcoholic hydroxyl group, amino group, carboxyl group, a group in which an acid group is anhydrified, and the like. Preferably, the thermosetting agent contains an amino-based curing agent having an amino group. Examples of the amino-based curing agent include dicyandiamide and the like.

[0064] The content of the thermosetting component (B) (for example, the content of the epoxy resin (B1) and the thermosetting agent (B2)) is, for example, 5 to 30% by mass, preferably 15 to 20% by mass, based on the total mass of the curable resin composition excluding the solvent.

[0065] (C) Curing accelerator Examples of the curing accelerator (C) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole (imidazole in which at least one hydrogen atom is substituted with a group other than a hydrogen atom); organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (phosphine in which at least one hydrogen atom is substituted with an organic group); and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Preferably, the curing accelerator (C) contains 2-phenyl-4,5-dihydroxymethylimidazole.

[0066] The content of the curing accelerator (C) is, for example, 0.1 to 1% by mass based on the total mass of the curable resin composition excluding the solvent.

[0067] (D) Silane coupling agent Examples of the silane coupling agent (D) include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazole silane. Preferably, the silane coupling agent (D) contains 3-glycidoxypropyltrimethoxysilane.

[0068] The content of the silane coupling agent (D) is, for example, 0.1 to 1% by mass based on the total mass of the curable resin composition excluding the solvent.

[0069] (E) Colorant As the colorant (E), inorganic pigments, organic pigments, organic dyes, etc. can be used. Among these, inorganic pigments are preferred because of less fading. Examples of the inorganic pigments include carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (indium tin oxide)-based pigments, ATO (antimony tin oxide)-based pigments, etc. Preferably, the colorant (E) contains carbon black.

[0070] The content of the coloring agent (E) is, for example, 0.1 to 10% by mass, preferably 0.5 to 5% by mass, based on the total mass of the curable resin composition excluding the solvent.

Examples

[0071] Subsequently, in order to explain the present invention in more detail, examples implemented by the present inventors will be described. However, the present invention should not be construed as being limited to the following examples.

[0072] (Example) (Manufacture of the film for the back resin layer) (Preparation of the composition for the back resin layer) The following raw materials were mixed with a methyl ethyl ketone solvent and stirred at 23°C for 60 minutes to prepare a composition for the back resin layer having a content of active ingredients (components other than the solvent) of 52% by mass. In the following description, the amounts of the respective components indicate the amounts of the active ingredients. (1) Acrylic polymer (20 parts by mass): An acrylic polymer obtained by copolymerizing 15 parts by mass of n-butyl acrylate, 10 parts by mass of methyl methacrylate, 60 parts by mass of methyl acrylate, and 15 parts by mass of 2-hydroxyethyl acrylate (weight average molecular weight: 600,000) (2) Bisphenol A liquid epoxy resin (15 parts by mass): "BPA328" manufactured by Nippon Shokubai Co., Ltd. (3) Bisphenol A epoxy resin (1.8 parts by mass): "jER1055" manufactured by Mitsubishi Chemical Corporation (4) Dicyandiamide (0.45 parts by mass): A heat-activated latent epoxy resin curing agent, "Adekahardener EH-3636AS" manufactured by ADEKA Corporation (5) 2-Phenyl-4,5-dihydroxymethylimidazole (0.45 parts by mass): "Curezol 2PHZ" manufactured by Shikoku Kasei Kogyo Co., Ltd. (6) Spherical silica filler (60 parts by mass): "SC105G-MMQ: Spherical silica" manufactured by Admatechs Co., Ltd. (average particle diameter 0.3 μm) (7) Silane coupling agent: 3-Glycidoxypropyltrimethoxysilane (3-glycidoxypropyltrimethoxysilane) (0.4 parts by mass), "KBM403" manufactured by Shin-Etsu Chemical Co., Ltd. (8) Colorant: Carbon black (1.9 parts by mass), "MA600B" manufactured by Mitsubishi Chemical Corporation (average particle size 28 nm)

[0073] (Formation of film for back resin layer) A release film having a release-treated surface was prepared. Then, on the release-treated surface, the composition for the back resin layer prepared above was coated with a knife coater. After coating, the composition for the back resin was dried at 110 °C for 2 minutes. The thickness of the composition for the back resin layer after drying was 25 μm. Further, on this composition for the back resin layer, the release-treated surface of another release film was laminated, and a film for the back resin layer (wafer back surface protection tape) having a structure in which the composition for the back resin layer was sandwiched between two release films was created.

[0074] (Manufacture of silicon chip with back resin layer) A 6-inch silicon wafer (thickness 350 μm) having a #2000 polished surface was prepared as a semiconductor substrate. One release film was peeled off from the film for the back resin layer, and the film for the back resin layer was attached to the silicon wafer facing the semiconductor substrate to form a back resin layer (uncured underlayer) on the semiconductor substrate. Specifically, the film for the back resin layer was attached by thermal lamination at a roll temperature of 70 °C and a roll speed of 0.3 m / min. Also, the other release film contained in the film for the back resin layer was peeled off and removed. A white ink (Agfa, Wh04) with a thickness of 5 μm was applied onto the exposed back resin layer with an applicator. Further, using a UV irradiator (CSN2 - 40, GS Ayusa Co., Ltd.), the white ink was irradiated with UV (under the conditions of UV illuminance (360 mJ / cm 2 , irradiation speed 13 m / min) to cure the white ink. Further, a heat curing process (130 °C, 2 h) was performed to cure the back resin layer. By the above procedure, a semiconductor wafer with white ink applied was produced.

[0075] (Comparative example) A semiconductor wafer according to the comparative example was fabricated by the same procedure as in the example. However, the order of applying the white ink and the thermosetting process (130 °C, 2 h) was reversed. That is, a back resin layer (underlayer) was formed on the semiconductor substrate, and after peeling off and removing the other release film remaining on the back resin layer, a thermosetting process (130 °C, 2 h) was performed. Then, after the thermosetting process, the white ink was applied and UV cured.

[0076] (Fixing property test) For the example and the comparative example, a fixing property test of the white ink was conducted. Specifically, first, the shape of the white ink was photographed with a 20-fold microscope (Keyence Digital Microscope VHX-7000) to obtain an initial image. The image was captured in an environment of side illumination (total illumination). Next, a dicing tape (manufactured by Lintec Corporation, D-485H) was laminated on the surface opposite to the surface on which the white ink was formed. Then, from the opposite side of the dicing tape (the side where the white ink was formed), using a dicer (manufactured by DISCO Corporation, DFD6362), cuts with a width of 1 mm were made in a grid pattern (10 rows vertically and 10 columns horizontally, 100 squares) on the semiconductor wafer without reaching the back surface. That is, the semiconductor wafer was half-cut. After the half-cut, a dicing tape (manufactured by Lintec Corporation, D-686H) was attached to the surface on which the white ink was formed. Next, the semiconductor wafer was allowed to stand for 10 minutes. After standing, UV irradiation was performed on the side of the dicing tape opposite to the side facing the semiconductor wafer to make the dicing tape peelable. After UV irradiation, the dicing tape was peeled off from the surface of the semiconductor wafer on which the white ink was formed so that the peeling angle was perpendicular. After peeling off the dicing tape, an image of the white ink was obtained with a microscope and compared with the initial image to observe the presence or absence of ink chipping. The case where no ink chipping was observed was marked as "〇", and the case where ink chipping was observed was marked as "×".

[0077] (Results and discussion) The results are shown in Table 1.

[0078]

Table 1

[0079] As shown in Table 1, the examples had higher fixing properties than the comparative examples. For the comparative examples, when the ink was applied, the base layer was in a cured state, so the ink peeled off from the base layer. In contrast, in the examples, the ink was applied to the uncured base layer (back resin layer). As a result, high fixing properties were obtained.

[0080] (Supplementary Note) Hereinafter, the main configurations included in the present invention will be summarized as supplementary notes.

[0081] (Supplementary Note 1) A method for manufacturing a semiconductor device, comprising: a base layer forming step (S1) of forming a base layer 3 formed of a curable resin composition on a semiconductor substrate 2; an ink marking step (S2) of applying an identity determination mark 4 used for determining the identity of the semiconductor device 1 with ink on the base layer 3; and a curing step (S3) of curing the base layer 3 after the ink marking step.

[0082] (Supplementary Note 2) A method for manufacturing a semiconductor device according to Supplementary Note 1, wherein the base layer forming step (S1) includes a step of forming the base layer 3 on the back surface of the semiconductor substrate 2.

[0083] (Supplementary Note 3) A semiconductor device according to Supplementary Note 1 or 2, wherein the base layer forming step (S1) includes a step of forming the base layer 3 by laminating a base layer forming film containing a curable resin composition on the back surface of the semiconductor substrate.

[0084] (Supplementary Note 4) A manufacturing method according to any one of Supplementary Notes 1 to 3, wherein the curable resin composition has thermosetting properties, and the curing step (S3) includes a step of curing the base layer 3 by thermosetting.

[0085] (Supplementary Note 5) The manufacturing method according to any one of Supplementary Notes 1 to 4, wherein the ink has curability, and the ink marking step (S2) includes a step of applying the ink onto the underlayer 3 and a step of curing the applied ink. A method for manufacturing a semiconductor device.

[0086] (Supplementary Note 6) A step of manufacturing an authentic semiconductor device using the manufacturing method according to any one of Supplementary Notes 1 to 5, a step of imaging a mark for identity determination during or after the manufacture of the authentic product, and generating authentic product data indicating the mark for identity determination of the authentic product, a step of imaging a mark for identity determination of the semiconductor device to be judged, and generating judged product data indicating the mark for identity determination of the judged product, and a step of judging whether the judged product is identical to the authentic product based on the authentic product data and the judged product data. An identity determination method for a semiconductor device.

[0087] (Supplementary Note 7) The identity determination method according to Supplementary Note 6, wherein the step of generating the authentic product data and the step of generating the judged product data each include a step of imaging the mark for identity determination through a microscope. An identity determination method.

[0088] (Supplementary Note 8) An underlayer forming device 21 for forming an underlayer formed of a curable resin composition on a semiconductor substrate, and an ink marking device 22 for applying a mark for identity determination used for determining the identity of a semiconductor device with ink onto the underlayer. A manufacturing system for a semiconductor device.

[0089] (Supplementary Note 9) The manufacturing system for a semiconductor device according to Supplementary Note 8, further comprising a curing device 24 for curing the underlayer provided with the mark for identity determination. A manufacturing system for a semiconductor device.

[0090] (Supplementary Note 10) The manufacturing system for a semiconductor device according to claim 8 or 9, further comprising an imaging device 23 for imaging the mark for identity determination. A manufacturing system for a semiconductor device.

[0091] (Appendix 11) A manufacturing system for a semiconductor device according to claim 10, further comprising a feature amount calculation device that calculates a feature amount from an image captured by an imaging device 23.

[0092] (Appendix 12) A manufacturing system for a semiconductor device according to any one of Appendices 8 to 11, wherein a base layer forming device 21 and an ink marking device 22 are integrated.

[0093] (Appendix 13) A manufacturing system for a semiconductor device according to claim 10, wherein a base layer forming device 21, an ink marking device 22, and an imaging device 23 are integrated.

[0094] (Appendix 14) A manufacturing system for a semiconductor device according to Appendix 12 or 13, wherein the curable resin composition has thermosetting properties.

[0095] (Cited by reference) This application claims priority based on Japanese Patent Application No. 2023-185889 (filing date: October 30, 2023) and Japanese Patent Application No. 2023-185890 (filing date: October 30, 2023), and the contents described in these applications are incorporated herein by reference.

Explanation of reference numerals

[0096] 1... Semiconductor device, 2... Semiconductor substrate, 3... Base layer, 4... Mark for identity determination, 5... Semiconductor wafer, 6... Ink, 7... Imaging device, 9... Blade, 10... Dicing tape, 11... Semiconductor chip, 20... Manufacturing system for semiconductor device, 21... Base layer forming device, 22... Ink marking device, 23... Imaging device, 24... Curing device

Claims

1. An underlayer forming step of forming an underlayer made of a curable resin composition on a semiconductor substrate; an ink marking step of applying an identity determination mark, which is used to determine the identity of a semiconductor device, to the undercoat layer by ink; a curing step of curing the undercoat layer after the ink marking step; Equipped with A method for manufacturing a semiconductor device.

2. 2. The method of manufacturing a semiconductor device according to claim 1, The underlayer forming step includes a step of forming the underlayer on the back surface of the semiconductor substrate, A method for manufacturing a semiconductor device.

3. 3. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: The underlayer forming step includes a step of laminating a film for forming an underlayer, the film including the curable resin composition, onto a rear surface of a semiconductor substrate to form the underlayer. A method for manufacturing a semiconductor device.

4. 3. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: The curable resin composition has thermosetting properties, The curing step includes a step of curing the undercoat layer by thermal curing. A method for manufacturing a semiconductor device.

5. A step of manufacturing a genuine semiconductor device by using the method for manufacturing a semiconductor device according to claim 1 or 2; a step of capturing an image of the identity determination mark during or after the production of the genuine product, and generating genuine product data indicating the identity determination mark of the genuine product; a step of capturing an image of the identity determination mark of a semiconductor device to be judged as an evaluation target product, and generating evaluation target product data indicating the identity determination mark of the evaluation target product; determining whether the target product is identical to the genuine product based on the genuine product data and the target product data; Equipped with A method for determining the identity of a semiconductor device.

6. The identity determination method according to claim 5, The step of generating the genuine product data and the step of generating the evaluation target product data each include a step of capturing an image of the identity determination mark through a microscope. Identity determination method.

7. An underlayer forming device that forms an underlayer formed from a curable resin composition on a semiconductor substrate; an ink marking device that applies an identity determination mark, which is used to determine the identity of a semiconductor device, onto the undercoat layer using ink; Equipped with A semiconductor device manufacturing system.

8. 8. The semiconductor device manufacturing system according to claim 7, The method further includes a hardening device for hardening the base layer to which the identity determination mark is applied. A semiconductor device manufacturing system.

9. 8. The semiconductor device manufacturing system according to claim 7, Further, an imaging device for imaging the identity determination mark is provided. A semiconductor device manufacturing system.

10. 10. The semiconductor device manufacturing system according to claim 9, The image capturing apparatus further includes a feature amount calculation device that calculates a feature amount from the image captured by the image capturing device. A semiconductor device manufacturing system.

11. 8. The semiconductor device manufacturing system according to claim 7, The undercoat layer forming device and the ink marking device are integrated together. A semiconductor device manufacturing system.

12. 10. The semiconductor device manufacturing system according to claim 9, the undercoat layer forming device, the ink marking device, and the imaging device are integrated together; A semiconductor device manufacturing system.

13. 13. The semiconductor device manufacturing system according to claim 11, The curable resin composition has thermosetting properties. A semiconductor device manufacturing system.

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