Wafer cleaning device, wafer processing device, and wafer cleaning method

Abstract

To provide a wafer cleaning device capable of suppressing enlargement of the device in a horizontal direction even in a case where both a cleaning liquid supply section and an ultraviolet ray irradiation section are disposed, a wafer processing device, and a wafer cleaning method.SOLUTION: A wafer cleaning device 100 comprises: a wafer hold and rotation section 3 which rotates a wafer We in a state of holding a frame Wf; and a cleaning liquid supply section 4 which supplies a cleaning liquid Cw for removing a foreign substance Cn to a surface of the wafer We held by the wafer hold and rotation section 3. The wafer cleaning device 100 comprises an ultraviolet ray irradiation section 5 which is disposed at a position overlapped with a supply port 41a of the cleaning liquid Cw of the cleaning liquid supply section 4 in a planar view in a state where the cleaning liquid Cw is supplied from the cleaning liquid supply section 4 to the wafer We held by the wafer hold and rotation section 3, and irradiates a wafer bonded portion Wt1 at which the wafer We is bonded, of an adhesive tape Wt with ultraviolet rays from below.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a wafer cleaning apparatus, a wafer processing apparatus, and a wafer cleaning method, and more particularly, to a wafer cleaning apparatus, a wafer processing apparatus, and a wafer cleaning method for removing foreign matter attached when a wafer is divided into a plurality of semiconductor chips.

Background Art

[0002] Conventionally, a wafer processing apparatus for removing foreign matter attached when a wafer is divided into a plurality of semiconductor chips is known (see, for example, Patent Document 1).

[0003] Patent Document 1 discloses a processing apparatus (wafer processing apparatus) for removing foreign matter attached when a wafer is divided into a plurality of semiconductor chips.

[0004] The processing apparatus of Patent Document 1 includes a laser irradiation unit, a suction unit, a clamp unit, a clamp lifting unit, a cleaning unit, and an ultraviolet irradiation unit. The laser irradiation unit is configured to irradiate a laser for forming a modified layer in the wafer. The suction unit is configured to suction the lower part of the wafer of the adhesive tape to which the wafer is attached after forming the modified layer. The clamp unit is configured to hold the frame attached to the adhesive tape together with the wafer after suctioning the lower part of the wafer of the adhesive tape by the suction unit. The clamp lifting unit is configured to lower the clamp unit relative to the suction unit. Due to this lowering, the adhesive tape expands, so that the wafer is divided along the modified layer.

[0005] The cleaning unit of Patent Document 1 is configured to clean the divided wafers. The ultraviolet irradiation unit is configured to irradiate ultraviolet rays on the adhesive tape at the lower part of the wafer cleaned by the cleaning unit. The ultraviolet irradiation unit is configured to irradiate ultraviolet rays on the adhesive tape at the lower part of the wafer in a state where the wafer and the adhesive tape are immersed in a liquid. Such an ultraviolet irradiation unit is arranged at a location separated from the cleaning unit in the horizontal direction.

Prior Art Documents

Patent Document

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] However, in the processing apparatus of Patent Document 1 described above, since the cleaning unit is arranged at a location horizontally separated from the ultraviolet irradiation unit, in order to secure the arrangement spaces for both the cleaning unit and the ultraviolet irradiation unit, the processing apparatus becomes larger in the horizontal direction. Therefore, even when both the cleaning unit (cleaning liquid supply unit) and the ultraviolet irradiation unit are arranged, it is desired to suppress the enlargement of the processing apparatus in the horizontal direction.

[0008] This invention has been made to solve the above-described problems, and one object of this invention is to provide a wafer cleaning apparatus, a wafer processing apparatus, and a wafer cleaning method capable of suppressing the enlargement of the apparatus in the horizontal direction even when both a cleaning liquid supply unit and an ultraviolet irradiation unit are arranged.

Means for Solving the Problems

[0009] A wafer cleaning apparatus according to a first aspect of this invention includes a wafer holding and rotating unit that holds a frame attached to an adhesive tape together with a wafer divided into a plurality of semiconductor chips and rotates the wafer while holding the frame, a cleaning liquid supply unit that supplies a cleaning liquid for removing foreign matters attached when the wafer is divided into a plurality of semiconductor chips to the surface of the wafer held by the wafer holding and rotating unit, and an ultraviolet irradiation unit that irradiates ultraviolet rays from below to a wafer-attached portion of the adhesive tape where the wafer is attached, the ultraviolet irradiation unit being arranged at a position that overlaps in plan view with a supply port of the cleaning liquid of the cleaning liquid supply unit while the cleaning liquid is being supplied from the cleaning liquid supply unit to the wafer held by the wafer holding and rotating unit.

[0010] In the wafer cleaning apparatus according to the first aspect of the present invention, as described above, a cleaning liquid supply unit for supplying a cleaning liquid for removing foreign matter to the surface of the wafer held by the wafer holding and rotating unit is provided. Further, in the wafer cleaning apparatus, in a state where the cleaning liquid is supplied, an ultraviolet irradiation unit is disposed at a position that overlaps the supply port of the cleaning liquid of the cleaning liquid supply unit in a plan view, and irradiates ultraviolet rays from below onto the wafer sticking portion of the adhesive tape where the wafer is stuck. Thereby, since the cleaning liquid supply unit and the ultraviolet irradiation unit are arranged at the same position in the horizontal direction, even when both the cleaning liquid supply unit and the ultraviolet irradiation unit are arranged, an increase in the size of the apparatus in the horizontal direction can be suppressed.

[0011] In the wafer cleaning apparatus according to the first aspect, preferably, in parallel with the cleaning of the wafer by supplying the cleaning liquid from the cleaning liquid supply unit to the surface of the wafer held and rotated by the wafer holding and rotating unit, while coating the surface of the wafer with the supplied cleaning liquid, a control unit for controlling the irradiation of ultraviolet rays from the ultraviolet irradiation unit toward the wafer sticking portion of the adhesive tape is further provided. With this configuration, since the wafer divided into a plurality of semiconductor chips is coated with the cleaning liquid, the space between the plurality of semiconductor chips can be coated with the cleaning liquid. Thereby, since air can be removed from the vicinity of the adhesion portion between the edge of the semiconductor chip and the adhesive tape by the coated cleaning liquid, a chemical reaction between ultraviolet rays and air is prevented, and a chemical reaction for curing the adhesive layer of the adhesive tape by ultraviolet rays can occur at the adhesion portion between the edge of the semiconductor chip and the adhesive tape. Further, since the ultraviolet irradiation is performed in parallel with the cleaning of the wafer with the cleaning liquid, the cleaning of the wafer and the irradiation of ultraviolet rays can be efficiently performed.

[0012] In this case, preferably, the control unit performs cleaning of the wafer with a cleaning liquid while holding the wafer by the wafer holding and rotating unit and rotating it at a first rotation speed. After that, while holding the wafer by the wafer holding and rotating unit and rotating the wafer at a second rotation speed slower than the first rotation speed, in parallel with the cleaning of the wafer, the control unit is configured to perform control to coat the surface of the wafer with the supplied cleaning liquid and irradiate ultraviolet rays from the ultraviolet irradiation unit toward the wafer attachment portion of the adhesive tape. Here, since the adhesive layer of the adhesive tape is cured by the irradiation of ultraviolet rays, the adhesive force of the adhesive tape decreases. Therefore, by performing the cleaning of the wafer and the irradiation of ultraviolet rays while rotating the wafer at a second rotation speed slower than the first rotation speed, the centrifugal force due to rotation can be reduced. Thus, even when the cleaning of the wafer and the irradiation of ultraviolet rays are performed in parallel, the semiconductor chip can be prevented from coming off the adhesive tape with the reduced adhesive force. Also, in the cleaning of the wafer with the cleaning liquid while rotating at the first rotation speed, a large centrifugal force is applied to the wafer, so foreign matter can be effectively removed together with the cleaning liquid. Further, in the cleaning of the wafer with the cleaning liquid while rotating at the second rotation speed, a small centrifugal force is applied to the wafer, so the cleaning liquid can penetrate to a deeper position between the semiconductor chips. As a result, foreign matter at the deep position can be removed, and the cleaning effect of the wafer can be improved.

[0013] In the wafer cleaning apparatus in which the control unit performs control to irradiate ultraviolet rays in parallel with the cleaning of the wafer, preferably, the wafer cleaning apparatus further includes a film thickness measurement unit that measures the film thickness of the cleaning liquid supplied to the surface of the wafer. When performing control to irradiate ultraviolet rays in parallel with the cleaning of the wafer, the control unit performs control to adjust at least one of the rotation speed of the wafer by the wafer holding and rotating unit and the supply amount of the cleaning liquid from the cleaning liquid supply unit based on the film thickness of the cleaning liquid measured by the film thickness measurement unit. With this configuration, it is possible to surely coat the space between the plurality of semiconductor chips with the cleaning liquid, so that air can be surely removed from the vicinity of the adhesion portion between the edge of the semiconductor chip and the adhesive tape by the coated cleaning liquid. As a result, it is possible to prevent a chemical reaction between ultraviolet rays and air and cause a chemical reaction to cure the adhesive layer of the adhesive tape by ultraviolet rays.

[0014] In this case, preferably, the film thickness measurement unit includes a laser measurement unit disposed at a position overlapping with the ultraviolet ray irradiation unit in a plan view in a state of measuring the film thickness of the cleaning liquid. With this configuration, since the laser measurement unit and the ultraviolet ray irradiation unit are disposed at the same position in the horizontal direction, even when the laser measurement unit is disposed in addition to the cleaning liquid supply unit and the ultraviolet ray irradiation unit, an increase in the size of the apparatus in the horizontal direction can be further suppressed.

[0015] In the wafer cleaning apparatus according to the first aspect, preferably, the wafer cleaning apparatus further includes a wafer drying unit that dries the wafer in a state of being disposed at a position overlapping with the ultraviolet ray irradiation unit in a plan view after the cleaning of the wafer. With this configuration, since the wafer drying unit and the ultraviolet ray irradiation unit are disposed at the same position in the horizontal direction, even when the wafer drying unit is disposed in addition to the cleaning liquid supply unit and the ultraviolet ray irradiation unit, an increase in the size of the apparatus in the horizontal direction can be further suppressed.

[0016] In the wafer cleaning apparatus according to the first aspect, preferably, the ultraviolet irradiation unit includes a plurality of ultraviolet light sources arranged such that ultraviolet light is evenly irradiated on the wafer attachment portion of the adhesive tape by rotating the wafer by the wafer holding and rotating unit. With this configuration, when the wafer is rotated by the wafer holding and rotating unit, ultraviolet light can be evenly irradiated on the wafer attachment portion of the adhesive tape, so that the adhesive layer of the adhesive tape can be evenly cured. As a result, when picking up the semiconductor chip, the semiconductor chip can be easily separated from the adhesive layer of the adhesive tape.

[0017] In the wafer cleaning apparatus in which the control unit performs control to irradiate ultraviolet light in parallel with the cleaning of the wafer, preferably, the cleaning liquid supply unit includes a cleaning nozzle that rotates between the rotation center position of the wafer holding and rotating unit and a retracted position outside the wafer holding and rotating unit in a plan view and has a supply port for supplying the cleaning liquid to the surface of the wafer. The control unit is configured to perform control to irradiate ultraviolet light from the ultraviolet irradiation unit toward the wafer attachment portion of the adhesive tape while coating the surface of the wafer with the supplied cleaning liquid in parallel with the cleaning of the wafer by supplying the cleaning liquid with the cleaning nozzle rotated to the rotation center position. With this configuration, since the cleaning liquid is supplied from the cleaning nozzle to the rotation center position of the wafer, the cleaning liquid can be evenly spread by the centrifugal force of the wafer in the radial direction of the wafer. As a result, the wafer in a state of being divided into a plurality of semiconductor chips can be evenly coated with the cleaning liquid, so that the air near the surface of the wafer can be removed as a whole.

[0018] The wafer processing apparatus according to the second aspect of the present invention includes a dicing unit that divides a wafer provided with a plurality of semiconductor chips into the plurality of semiconductor chips, and a wafer cleaning unit that cleans the wafer after being divided by the dicing unit. The wafer cleaning unit holds a frame attached to an adhesive tape together with the wafer, and has a wafer holding and rotating unit that rotates the wafer while holding the frame, and a cleaning liquid supply unit that supplies a cleaning liquid for removing foreign matter attached when the wafer is divided into the plurality of semiconductor chips to the surface of the wafer held by the wafer holding and rotating unit. The wafer cleaning unit includes an ultraviolet irradiation unit that irradiates ultraviolet rays downward onto the wafer-attached portion of the adhesive tape at a position that overlaps with the supply port of the cleaning liquid of the cleaning liquid supply unit in a plan view while the cleaning liquid is being supplied from the cleaning liquid supply unit to the wafer held by the wafer holding and rotating unit.

[0019] In the wafer processing apparatus according to the second aspect of the present invention, as described above, a cleaning liquid supply unit that supplies a cleaning liquid for removing foreign matter to the surface of the wafer held by the wafer holding and rotating unit is provided. Further, in the wafer processing apparatus, an ultraviolet irradiation unit that irradiates ultraviolet rays downward onto the wafer-attached portion of the adhesive tape at a position that overlaps with the supply port of the cleaning liquid of the cleaning liquid supply unit in a plan view while the cleaning liquid is being supplied from the cleaning liquid supply unit is provided. Thereby, since the cleaning liquid supply unit and the ultraviolet irradiation unit are arranged at the same location in the horizontal direction, it is possible to provide a wafer processing apparatus capable of suppressing an increase in the size of the apparatus in the horizontal direction even when both the cleaning liquid supply unit and the ultraviolet irradiation unit are arranged.

[0020] The wafer cleaning method according to the third aspect of the present invention includes a step of holding, by a wafer holding and rotating unit, a frame attached together with an adhesive tape to which a wafer divided into a plurality of semiconductor chips is attached, and a step of irradiating ultraviolet rays from an ultraviolet irradiation unit toward the wafer-attached portion of the adhesive tape in parallel with cleaning of the wafer by supplying a cleaning liquid from a cleaning liquid supply unit to the surface of the wafer rotated while being held by the wafer holding and rotating unit.

[0021] In the wafer cleaning method according to the third aspect of the present invention, as described above, while the wafer is held and rotated by the wafer holding and rotating unit, the cleaning liquid is supplied from the cleaning liquid supply unit to the surface of the wafer, and in parallel with the cleaning of the wafer, a step of irradiating ultraviolet rays from the ultraviolet ray irradiation unit toward the wafer sticking portion of the adhesive tape is provided. Thereby, since air can be removed from the vicinity of the adhesion portion between the edge of the semiconductor chip and the adhesive tape by the coated cleaning liquid, a chemical reaction between the ultraviolet rays and the air is prevented, and a chemical reaction for curing the adhesive layer of the adhesive tape by the ultraviolet rays can occur at the adhesion portion between the edge of the semiconductor chip and the adhesive tape. Further, since the ultraviolet ray irradiation is performed in parallel with the cleaning of the wafer by the cleaning liquid, a wafer cleaning method capable of efficiently performing the cleaning of the wafer and the irradiation of the ultraviolet rays can be provided.

[0022] In the wafer cleaning method according to the above-described third aspect, preferably, the step of irradiating ultraviolet rays includes a step of irradiating ultraviolet rays from the ultraviolet ray irradiation unit disposed at a position overlapping the supply port of the cleaning liquid of the cleaning liquid supply unit in a plan view while coating the surface of the wafer with the supplied cleaning liquid toward the wafer sticking portion. With this configuration, since the cleaning liquid supply unit and the ultraviolet ray irradiation unit are arranged at the same location in the horizontal direction, even when both the cleaning liquid supply unit and the ultraviolet ray irradiation unit are arranged, an increase in the size of the apparatus in the horizontal direction can be suppressed.

Effects of the Invention

[0023] According to the present invention, as described above, even when both the cleaning liquid supply unit and the ultraviolet ray irradiation unit are arranged, an increase in the size of the apparatus in the horizontal direction can be suppressed.

Brief Description of the Drawings

[0024]

Figure 1

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Figure 19

Embodiments for Carrying Out the Invention

[0025] Hereinafter, embodiments embodying the present invention will be described with reference to the drawings.

[0026] [First Embodiment] With reference to FIGS. 1 to 12, the configuration of the wafer cleaning apparatus 100 according to the first embodiment of the present invention will be described.

[0027] (Wafer Cleaning Apparatus) As shown in FIG. 1, the wafer cleaning apparatus 100 is configured to perform cleaning for removing foreign matter Cn adhering when a wafer We is divided into a plurality of semiconductor chips Ch (see FIG. 2). Here, as shown in FIG. 2, the foreign matter Cn is fragments of the wafer We when the wafer We is divided into a plurality of semiconductor chips Ch by a dicing unit (not shown).

[0028] As shown in FIG. 1, the wafer cleaning apparatus 100 includes a cassette unit 1, a wafer transfer unit 2, a wafer holding and rotating unit 3, a cleaning liquid supply unit 4, an ultraviolet irradiation unit 5, a wafer drying unit 6, a lifting mechanism 7 (see FIG. 3), a cover unit 8, a lid unit 9 (see FIG. 3), and a control unit 10.

[0029] Here, the vertical direction is defined as the Z direction, the upward direction is the Z1 direction, and the downward direction is the Z2 direction. The horizontal direction orthogonal to the Z direction is the X direction, one side of the X direction is the X1 direction, and the other side of the X direction is the X2 direction. Further, the direction orthogonal to the X direction in the horizontal direction is the Y direction, one side of the Y direction is the Y1 direction, and the other side of the Y direction is the Y2 direction.

[0030] The cassette unit 1 is configured to accommodate a plurality of cassettes in a state where a plurality of wafer ring structures W provided by wafers We attached to an adhesive tape Wt and frames Wf are placed. Specifically, the cassette unit 1 includes a plurality of cassette placement units 11 and a Z-direction movement mechanism 12.

[0031] The plurality of cassette placement units 11 include one cassette placement unit 11a (see FIG. 3) and another cassette placement unit 11b (see FIG. 3). A cassette containing a plurality of wafers We before cleaning is placed on one cassette placement unit 11a. Also, a cassette containing a plurality of wafers We after cleaning is placed on the other cassette placement unit 11b. The Z-direction movement mechanism 12 is configured to move the plurality of cassette placement units 11 integrally in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 12 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0032] The wafer transfer unit 2 is configured to transfer the wafer ring structure W between the cassette unit 1 and the wafer holding and rotating unit 3. Specifically, the wafer transfer unit 2 has a clamp hand unit 21, a Y-direction movement mechanism 22, a pair of rail units 23, and an X-direction movement mechanism (not shown).

[0033] The clamp hand unit 21 is configured to perform each of the operations of clamping the frame Wf of the wafer ring structure W and taking it out from the cassette unit 1 and accommodating it in the cassette unit 1. The clamp hand unit 21 is moved in each of the Y1 direction and the Y2 direction by the Y-direction movement mechanism 22. The Y-direction movement mechanism 22 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0034] The clamp hand part 21 conveys the wafer ring structure W taken out from the cassette part 1 to a pair of rail parts 23 by the Y-direction moving mechanism 22. The clamp hand part 21 accommodates the washed wafer ring structure W placed on the pair of rail parts 23 in the cassette part 1 by the Y-direction moving mechanism 22.

[0035] The pair of rail parts 23 is configured to support the wafer ring structure W placed by the clamp hand part 21 from the Z2-direction side. The pair of rail parts 23 moves the rail part 23 on the X1-direction side to the X2-direction side and the rail part 23 on the X2-direction side to the X1-direction side to approach each other by the X-direction moving mechanism, and supports the wafer ring structure W from the Z2-direction side. The pair of rail parts 23 moves the rail part 23 on the X1-direction side to the X1-direction side and the rail part 23 on the X2-direction side to the X2-direction side to separate from each other by the X-direction moving mechanism, and releases the support of the wafer ring structure W.

[0036] (Wafer holding and rotating part) As shown in FIG. 4, the wafer holding and rotating part 3 holds the frame Wf pasted on the adhesive tape Wt together with the wafer We divided into a plurality of semiconductor chips Ch, and rotates the wafer We while holding the frame Wf. Specifically, the wafer holding and rotating part 3 has a plurality (four) of clamp parts 31, a mounting member 32, a driving part 33, and a rotation angle detection part (not shown). In the following description, the wafer We divided into a plurality of semiconductor chips Ch is simply referred to as the wafer We.

[0037] The clamp part 31 is configured to hold the frame Wf in the Z direction. The clamp part 31 has a pressing part 31a, a support part 31b, and a fixing part 31c.

[0038] The pressing part 31a is attached to the fixing part 31c so as to rotate to each of a holding position for holding the frame Wf and a holding release position for releasing the holding. The pressing part 31a is configured to press the frame Wf from the Z1 direction side when rotated to the holding position. The supporting part 31b is configured to support the frame Wf from the Z2 direction side. Further, the supporting part 31b is configured to support the frame Wf from the Z2 direction side in a state where the frame Wf is pressed from the Z1 direction side by the pressing part 31a rotated to the holding position. The supporting part 31b is attached to the fixing part 31c. The fixing part 31c is a member for attaching the pressing part 31a and the supporting part 31b to the attachment member 32.

[0039] The attachment member 32 is a member for attaching the fixing part 31c to the cover part 8. The attachment member 32 is attached to the cover part 8 via a bearing or the like so as to relatively rotate in the R direction around the rotation center axis C with respect to the cover part 8. The R direction is one direction in the circumferential direction around the rotation center axis C. Further, the attachment member 32 is attached to the cover part 8 via a bearing or the like so as to relatively move in each of the Z1 direction and the Z2 direction with respect to the cover part 8. The attachment member 32 has a substantially cylindrical shape. Inner teeth that mesh with the output gear of the drive part 33 are formed on the inner peripheral surface of the attachment member 32. The drive part 33 has a drive source for rotating the attachment member 32. The drive part 33 has, for example, a motor and a speed reduction mechanism. The rotation angle detection part is a sensor such as an encoder for detecting the rotation angle of the wafer holding and rotating part 3.

[0040] Such a plurality (four) of clamp parts 31 are attached to the attachment member 32 in a state of being equally angularly spaced from each other in the R direction around the rotation center axis C. The plurality (four) of clamp parts 31 are configured to rotate integrally with the attachment member 32 in the R direction by the driving force of the drive part 33.

[0041] (Cleaning liquid supply part) As shown in FIG. 4, the cleaning liquid supply unit 4 is configured to supply a cleaning liquid Cw for removing foreign matter Cn adhering when the wafer We is divided into a plurality of semiconductor chips Ch to the surface of the wafer We held by the wafer holding and rotating unit 3. The cleaning liquid supply unit 4 is configured to supply the cleaning liquid Cw to the surface of the wafer We while rotating the wafer We held by the wafer holding and rotating unit 3 in the R direction. Here, the cleaning liquid Cw is, for example, pure water, alcohol, or a liquid containing a neutral detergent.

[0042] The cleaning liquid supply unit 4 has a cleaning nozzle 41 and a drive unit 42. The cleaning nozzle 41 has a supply port 41a for supplying the cleaning liquid Cw to the surface of the wafer We. As shown in FIG. 5, the cleaning liquid supply unit 4 is configured to rotate the supply port 41a between the rotation center position Pc of the wafer holding and rotating unit 3 and the retracted position Pe1 outside the wafer holding and rotating unit 3 in a plan view. Here, the rotation center position Pc is the position of the rotation center axis C in a plan view. The drive unit 42 is configured to generate a driving force for rotating the cleaning nozzle 41 in the circumferential direction around the rotation center axis Cr1. The drive unit 42 has, for example, a motor and a speed reduction mechanism. The drive unit 42 is arranged at a position displaced radially outward of the rotation center axis C with respect to the wafer holding and rotating unit 3 in a plan view.

[0043] Thereby, the supply port 41a is arranged at the rotation center position Pc by the cleaning nozzle 41 rotated in the Rt1 direction by the drive unit 42. Also, the supply port 41a is arranged at the retracted position Pe1 by the cleaning nozzle 41 rotated in the Rt2 direction by the drive unit 42.

[0044] (Ultraviolet irradiation unit) As shown in Fig. 4, the ultraviolet irradiation unit 5 is configured to irradiate the wafer attachment portion Wt1 of the adhesive tape Wt to which the wafer We is attached with ultraviolet rays from below. Here, by irradiating the wafer attachment portion Wt1 with ultraviolet rays from below, the adhesive layer of the adhesive tape Wt is cured, making it easier for the semiconductor chip Ch to be peeled off from the adhesive layer. In Fig. 4, for convenience of explanation, the semiconductor chip Ch is shown enlarged, and the distance between the semiconductor chips Ch is also shown enlarged.

[0045] Such an ultraviolet irradiation unit 5 is arranged at a position that overlaps with the supply port 41a of the cleaning liquid Cw of the cleaning liquid supply unit 4 in a plan view while the cleaning liquid Cw is being supplied from the cleaning liquid supply unit 4 to the wafer We held by the wafer holding and rotating unit 3. Further, the ultraviolet irradiation unit 5 is arranged inside the drive unit 42 of the cleaning liquid supply unit 4 in the radial direction of the rotation center axis C. Also, the ultraviolet irradiation unit 5 is arranged inside the drive unit 62 (to be described later) of the wafer drying unit 6 in the radial direction of the rotation center axis C. The ultraviolet irradiation unit 5 is arranged inside the plurality (four) of clamp units 31 in the radial direction of the rotation center axis C.

[0046] As shown in Figs. 4 and 5, the ultraviolet irradiation unit 5 includes a plurality (25) of ultraviolet light source groups 51, a plurality (25) of lid portions 52, and an ultraviolet shielding portion 53. Note that the number of the plurality (25) of ultraviolet light source groups 51 may be 1 to 24, or 26 or more. Also, the plurality (25) of lid portions 52 may be provided according to the number of the ultraviolet light source groups 51.

[0047] A plurality of ultraviolet light source groups 51 are arranged in a matrix so as to overlap with the wafer We in the Z direction. When viewed from the Z1 direction, the plurality of ultraviolet light source groups 51 have the same rectangular shape. A plurality of ultraviolet light source groups 51 arranged in the X direction are arranged in accordance with the diameter of the wafer We. Also, a plurality of ultraviolet light source groups 51 arranged in the Y direction are arranged in accordance with the diameter of the wafer We. The irradiation range obtained by combining the ultraviolet irradiation ranges Ra of each of the plurality of ultraviolet light source groups 51 is the same as or wider than the region of the wafer bonding portion Wt1. When viewed from the Z1 direction side, the ultraviolet irradiation range Ra of each of the plurality of ultraviolet light source groups 51 is rectangular (see FIG. 5).

[0048] The ultraviolet light source group 51 has a plurality (9) of ultraviolet light sources 51a as shown by the thick broken line portion in FIG. 5. In each of the plurality (25) of ultraviolet light source groups 51, an odd number of ultraviolet light sources 51a and an odd number of ultraviolet light sources 51a are arranged in a matrix. Also, if the number of the plurality of ultraviolet light sources 51a is odd, it may be 1 to 7 or 11 or more. Each of the plurality of ultraviolet light sources 51a is, for example, an LED (Light Emitting Diode) that emits ultraviolet light. Each of the plurality of ultraviolet light sources 51a has the same configuration.

[0049] As shown in FIG. 5, the pitch Ph of each of the plurality of ultraviolet light sources 51a is set to be relatively small in order to increase the amount of ultraviolet light in the ultraviolet irradiation range Ra. Also, as shown in FIG. 4, the distance D between each of the plurality of ultraviolet light sources 51a and the surface on the Z2 direction side of the wafer We is set to be relatively short in order to increase the amount of ultraviolet light in the ultraviolet irradiation range Ra. When reducing the number of the plurality of ultraviolet light sources 51a, the pitch Ph of each of the plurality of ultraviolet light sources 51a is set to be large, and the distance D between each of the plurality of ultraviolet light sources 51a and the surface on the Z2 direction side of the wafer We is set to be long.

[0050] In this way, the plurality of ultraviolet light sources 51a are arranged such that the wafer We is rotated in the R direction by the wafer holding and rotating unit 3, and the wafer sticking portion Wt1 of the adhesive tape Wt is evenly irradiated with ultraviolet light. When the wafer We is rotated in the R direction by the wafer holding and rotating unit 3, all of the plurality of ultraviolet light sources 51a are lit.

[0051] As shown in FIG. 4, the plurality of lid portions 52 are attached to each of the plurality of ultraviolet light source groups 51. The lid portion 52 covers the ultraviolet light source group 51 from the Z1 direction side. The ultraviolet light source group 51 covered by the lid portion 52 is one illumination unit (illumination portion). The lid portion 52 is configured to transmit ultraviolet light.

[0052] The ultraviolet light shielding portion 53 is configured to shield the ultraviolet light that travels toward the frame sticking portion Wt2 on the Z2 direction side of the frame Wf of the adhesive tape Wt among the ultraviolet light irradiated on the ultraviolet light irradiation range Ra. The ultraviolet light shielding portion 53 covers the ultraviolet light source group 51 disposed in the outer portion in the radial direction orthogonal to the rotation center axis C among the plurality of ultraviolet light source groups 51. The ultraviolet light shielding portion 53 is attached to a pedestal portion 72 (to be described later) of the elevating mechanism 7. The ultraviolet light shielding portion 53 has an annular shape when viewed from the Z1 direction side (see FIG. 5). Thereby, since the ultraviolet light traveling toward the frame sticking portion Wt2 is shielded by the ultraviolet light shielding portion 53, a decrease in the adhesive force of the frame sticking portion Wt2 is prevented, so that the frame Wf is prevented from peeling off from the adhesive tape Wt.

[0053] (Wafer drying unit) As shown in FIG. 7, the wafer drying unit 6 is configured to dry the semiconductor chip Ch (wafer We) after cleaning by the cleaning liquid supply unit 4. Here, the wafer drying unit 6 dries the wafer We, for example, by supplying heated warm air or by blowing air.

[0054] The wafer drying unit 6 has a hot air nozzle 61 and a drive unit 62. The hot air nozzle 61 has an air supply port (not shown) for supplying hot air to the wafer We. The wafer drying unit 6 is configured to rotate the air supply port between the rotation center position Pc of the wafer holding and rotating unit 3 and the retracted position Pe2 outside the wafer holding and rotating unit 3 in a plan view. The drive unit 62 is configured to generate a driving force for rotating the hot air nozzle 61 in the circumferential direction around the rotation center axis Cr2. The drive unit 62 has, for example, a motor and a speed reduction mechanism. The drive unit 62 is arranged at a position shifted radially outward of the rotation center axis C with respect to the wafer holding and rotating unit 3 in a plan view.

[0055] Thereby, the air supply port is arranged at the rotation center position Pc by the hot air nozzle 61 rotated in the Rt3 direction by the drive unit 62. That is, the wafer drying unit 6 dries the semiconductor chip Ch (wafer We) in a state where the air supply port is arranged at the rotation center position Pc that overlaps with the ultraviolet irradiation unit 5 in a plan view after the wafer We is washed. Further, the air supply port is arranged at the retracted position Pe2 by the hot air nozzle 61 rotated in the Rt4 direction by the drive unit 62.

[0056] (Lifting mechanism) As shown in FIG. 8, the lifting mechanism 7 is configured to integrally lift and lower the wafer holding and rotating unit 3 and the ultraviolet irradiation unit 5. The lifting mechanism 7 is arranged in accordance with the center position of the cover unit 8. The lifting mechanism 7 has a lifting unit 71 and a pedestal unit 72. The lifting unit 71 is, for example, an air cylinder. A plurality (two) of the lifting units 71 are provided, but one or three or more may be provided. The pedestal unit 72 is attached to the end portion on the Z1 direction side of the lifting unit 71. A plurality of ultraviolet light source groups 51 are attached to the surface on the Z1 direction side of the pedestal unit 72.

[0057] (Cover unit) The cover part 8 is a member that suppresses the scattering of the cleaning liquid Cw supplied to the semiconductor chip Ch (wafer We) when the semiconductor chip Ch (wafer We) is rotated by the wafer holding and rotating part 3. The cover part 8 has an outer cover part 81 and an inner cover part 82.

[0058] The outer cover part 81 is configured to cover the wafer holding and rotating part 3, the cleaning liquid supply part 4, and the wafer drying part 6 in the radial direction of the rotation center axis C of the wafer holding and rotating part 3. The outer cover part 81 has an inner surface configured to receive the scattered cleaning liquid Cw and flow the received cleaning liquid Cw in the Z2 direction (downward). Further, the outer cover part 81 is provided with a discharge port 81b for discharging the cleaning liquid Cw that has flowed in the Z2 direction (downward). The outer cover part 81 is provided with a suction port 81c for sucking the scattered cleaning liquid Cw in the Z2 direction (downward).

[0059] The inner cover part 82 is configured to surround the elevating part 71 in the radial direction of the rotation center axis C of the wafer holding and rotating part 3. The inner cover part 82 is a part for attaching the attachment member 32 to the cover part 8 so as to relatively rotate in the R direction around the rotation center axis C.

[0060] (Cover part) The cover part 9 is a member that suppresses the scattering of the cleaning liquid Cw together with the cover part 8 and is also a member for shielding the ultraviolet rays irradiated from the ultraviolet irradiation part 5. The cover part 9 is configured to cover the opening in the Z1 direction of the cover part 8. The cover part 9 is configured to move up and down to a retracted position in the Z1 direction and a shielding position in the Z2 direction (see FIG. 4) by a lifting mechanism (not shown).

[0061] As shown in FIG. 9, the control unit 10 controls the wafer cleaning apparatus 100. The control unit 10 includes a CPU (Central Processing Unit), a storage unit having an SSD (Solid State Drive) and an HDD (Hard Disk Drive), and a memory having a ROM (Read Only Memory) and a RAM (Random Access Memory). A wafer cleaning program for cleaning the wafer We is stored in the storage unit.

[0062] The control unit 10 is electrically connected to the cassette unit 1, the wafer transfer unit 2, the wafer holding and rotating unit 3, the cleaning liquid supply unit 4, the ultraviolet irradiation unit 5, the wafer drying unit 6, and the elevating mechanism 7.

[0063] (Wafer Cleaning Control) With reference to FIG. 10, the wafer cleaning control will be described.

[0064] Before starting the cleaning of the divided wafer We, the control unit 10 controls the elevating mechanism 7 to raise the wafer holding and rotating unit 3, holds the wafer We transported by the wafer transfer unit 2 in the wafer holding and rotating unit 3, and then controls the elevating mechanism 7 to lower the wafer holding and rotating unit 3 (see FIG. 4). After the control unit 10 lowers the wafer holding and rotating unit 3 by the elevating mechanism 7, it controls the lid unit 9 to be lowered to the shielding position (see FIG. 4).

[0065] 〈Strong Cleaning〉 As shown in FIG. 10, after the control unit 10 lowers the lid 9 to the shielding position, it controls to rotate the supply port 41a of the cleaning nozzle 41 to the rotation center position Pc. After the control unit 10 rotates the supply port 41a of the cleaning nozzle 41 to the rotation center position Pc, while continuously supplying the cleaning liquid Cw by the cleaning liquid supply unit 4, while holding by the wafer holding and rotating unit 3, the wafer We is strongly cleaned with the cleaning liquid Cw in a state of being rotated at the first rotation speed W1V. At this time, suction is also performed by the suction port 81c. Based on the fact that the integrated rotation number of the wafer holding and rotating unit 3 during strong cleaning has reached the first planned rotation number, the control unit 10 stops the rotation of the wafer holding and rotating unit 3 and the supply of the cleaning liquid Cw by the cleaning liquid supply unit 4. The first rotation speed W1V, the supply amount of the cleaning liquid Cw, and the first planned rotation number are set in advance.

[0066] 〈Weak cleaning〉 Also, as shown in FIG. 10, after the strong cleaning of the wafer We, the control unit 10 performs the irradiation of ultraviolet rays from the ultraviolet irradiation unit 5 to the wafer attachment portion Wt1 of the adhesive tape Wt and the weak cleaning of the wafer We in parallel. At this time, suction is also performed by the suction port 81c. That is, when the control unit 10 irradiates ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer attachment portion Wt1, it controls to continuously supply the cleaning liquid Cw by the cleaning liquid supply unit 4.

[0067] Specifically, the control unit 10 maintains the state in which the supply port 41a of the cleaning nozzle 41 is rotated to the rotation center position Pc, rotates the wafer holding and rotating unit 3 at the second rotation speed W2V, and controls to start the supply of the cleaning liquid Cw.

[0068] As shown in FIG. 11, in parallel with the cleaning of the wafer We by supplying the cleaning liquid Cw from the cleaning liquid supply unit 4 to the surface of the wafer We while being rotated by the wafer holding and rotating unit 3, the control unit 10 controls to irradiate ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer attachment portion Wt1 while coating the surface of the wafer We with the supplied cleaning liquid Cw. Thereby, weak cleaning and ultraviolet irradiation are performed in parallel.

[0069] As shown in FIG. 10, based on the fact that the integrated rotation speed of the wafer holding and rotating unit 3 during weak cleaning has reached the second planned rotation speed, the control unit 10 stops the rotation of the wafer holding and rotating unit 3 and the supply of the cleaning liquid Cw from the cleaning liquid supply unit 4.

[0070] Here, the second rotation speed W2V, the supply amount of the cleaning liquid Cw, and the second planned rotation speed are preset. The second rotation speed W2V is slower than the first rotation speed W1V. As an example, the first rotation speed W1V is 1000 rpm to 4000 rpm, and the second rotation speed W2V is 50 rpm to 200 rpm.

[0071] In this way, after cleaning the wafer We with the cleaning liquid Cw while rotating at the first rotation speed W1V (see FIG. 4), the control unit 10 controls to irradiate ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer attachment portion Wt1 of the adhesive tape Wt while coating the surface of the wafer We with the supplied cleaning liquid Cw and rotating the wafer We divided at the second rotation speed W2V (see FIG. 11). Thereby, since the periphery of the semiconductor chip Ch as the wafer We is filled with the cleaning liquid Cw, the edge portion of the lower surface of the semiconductor chip Ch does not come into contact with air. For this reason, since the reaction between ultraviolet rays and air is suppressed, the ultraviolet rays act on the adhesive layer at the edge portion of the lower surface of the semiconductor chip Ch of the adhesive tape Wt.

[0072] <Drying> As shown in FIG. 10, after the weak cleaning of the wafer We, the control unit 10 controls to supply warm air from the wafer drying unit 6 to the wafer We (see FIG. 7).

[0073] Specifically, after rotating the supply port 41a of the cleaning nozzle 41 to the retracted position Pe1, the control unit 10 performs control to rotate the air supply port of the hot air nozzle 61 to the rotation center position Pc. The control unit 10 rotates the wafer holding and rotating unit 3 at the second rotation speed W2V and performs control to start the supply of hot air. The control unit 10 stops the supply of hot air to the wafer drying unit 6 based on the fact that the integrated rotation number of the wafer holding and rotating unit 3 during drying has reached the third planned rotation number. Here, the second rotation speed W2V, the supply amount of hot air, and the third planned rotation number are preset.

[0074] After drying by the wafer drying unit 6, the control unit 10 performs control to raise the lid 9 to the retracted position (see FIG. 8). After raising the lid 9 to the retracted position, the control unit 10 performs control to raise the wafer holding and rotating unit 3 by the lifting mechanism 7 (see FIG. 8). After raising the wafer holding and rotating unit 3 by the lifting mechanism 7, the control unit 10 performs control to release the holding of the wafer We by the wafer holding and rotating unit 3. After releasing the holding of the wafer We, the control unit 10 performs control to cause the wafer transfer unit 2 to hold the wafer We. The control unit 10 performs control to store the wafer We that has been cleaned and dried by the wafer transfer unit 2 in the cassette unit 1. The above-described control is repeated for the number of wafers We to be produced.

[0075] (Wafer cleaning method) With reference to FIG. 12, the wafer cleaning method of the wafer cleaning apparatus 100 having the above-described configuration will be described.

[0076] As shown in FIG. 12, in step S1, the frame Wf attached together to the adhesive tape Wt to which the wafer We divided into a plurality of semiconductor chips Ch is attached is held by the wafer holding and rotating unit 3. In step S2, strong cleaning is performed. That is, while rotating the wafer holding and rotating unit 3 at the first rotation speed W1V, the cleaning liquid Cw is supplied from the cleaning liquid supply unit 4, whereby the wafer We is cleaned (see FIG. 4).

[0077] In step S3, weak cleaning and ultraviolet irradiation are performed. That is, while rotating the wafer holding and rotating unit 3 at the second rotation speed W2V, the cleaning liquid Cw is supplied from the cleaning liquid supply unit 4 to clean the wafer We. While coating the wafer We, ultraviolet rays are irradiated from the ultraviolet irradiation unit 5 toward the wafer sticking portion Wt1 of the adhesive tape Wt (see FIG. 11).

[0078] Step S3 is a step of irradiating ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer sticking portion Wt1 of the adhesive tape Wt in parallel with the cleaning of the wafer We by supplying the cleaning liquid Cw from the cleaning liquid supply unit 4 to the surface of the wafer We held and rotated by the wafer holding and rotating unit 3. That is, step S3 is a step of irradiating ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer sticking portion Wt1 at a position that overlaps the supply port 41a of the cleaning liquid Cw of the cleaning liquid supply unit 4 in a plan view while coating the surface of the wafer We with the supplied cleaning liquid Cw (see FIG. 11).

[0079] In step S4, the wafer We is dried. That is, while rotating the wafer holding and rotating unit 3 at the second rotation speed W2V, warm air is supplied from the wafer drying unit 6 to dry the wafer We (see FIG. 7). In step S5, after the dried wafer We is accommodated in the cassette unit 1 by the wafer transfer unit 2, the wafer cleaning method ends.

[0080] (Effect of the First Embodiment) In the first embodiment, the following effects can be obtained.

[0081] In the first embodiment, as described above, the wafer cleaning apparatus 100 includes a cleaning liquid supply unit 4 that supplies a cleaning liquid Cw for removing foreign matter Cn to the surface of the wafer We held by the wafer holding and rotating unit 3. Further, the wafer cleaning apparatus 100 is disposed at a position that overlaps the supply port 41a of the cleaning liquid Cw of the cleaning liquid supply unit 4 in a plan view while the cleaning liquid Cw is being supplied, and includes an ultraviolet irradiation unit 5 that irradiates ultraviolet rays downward onto the wafer attachment portion Wt1 of the adhesive tape Wt to which the wafer We is attached. As a result, since the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are disposed at the same location in the horizontal direction, even when both the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are disposed, an increase in the size of the apparatus in the horizontal direction can be suppressed.

[0082] Also, in the first embodiment, as described above, the wafer cleaning apparatus 100 includes a control unit 10 that performs control to irradiate ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer attachment portion Wt1 of the adhesive tape Wt while coating the surface of the wafer We with the supplied cleaning liquid Cw in parallel with the cleaning of the wafer We by supplying the cleaning liquid Cw from the cleaning liquid supply unit 4 to the surface of the wafer We while rotating it while being held by the wafer holding and rotating unit 3. As a result, since the wafer We divided into a plurality of semiconductor chips Ch is coated with the cleaning liquid Cw, the space between the plurality of semiconductor chips Ch can be coated with the cleaning liquid Cw. Thereby, since air can be removed from the vicinity of the adhesion portion between the edge of the semiconductor chip Ch and the adhesive tape Wt by the coated cleaning liquid Cw, a chemical reaction between ultraviolet rays and air is prevented, and a chemical reaction that cures the adhesive layer of the adhesive tape Wt by ultraviolet rays can occur at the adhesion portion between the edge of the semiconductor chip Ch and the adhesive tape Wt. Further, since ultraviolet rays are irradiated in parallel with the cleaning of the wafer We with the cleaning liquid Cw, the cleaning of the wafer We and the irradiation of ultraviolet rays can be performed efficiently.

[0083] Also, in the first embodiment, as described above, while holding the wafer We by the wafer holding and rotating unit 3 and rotating it at the first rotation speed W1V, after cleaning the wafer We with the cleaning liquid Cw, the wafer holding and rotating unit 3 holds the wafer We and rotates it at the second rotation speed W2V which is slower than the first rotation speed W1V. In a state where the wafer We is rotated, in parallel with the cleaning of the wafer We, while coating the surface of the wafer We with the supplied cleaning liquid Cw, control is performed to irradiate ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer attachment portion Wt1 of the adhesive tape Wt. Here, since the adhesive layer of the adhesive tape Wt is cured by the irradiation of ultraviolet rays, the adhesive force of the adhesive tape Wt decreases. Therefore, by rotating the wafer We at the second rotation speed W2V which is slower than the first rotation speed W1V and performing the cleaning of the wafer We and the irradiation of ultraviolet rays, the centrifugal force due to rotation can be reduced. Thus, even when the cleaning of the wafer We and the irradiation of ultraviolet rays are performed in parallel, the semiconductor chip Ch can be prevented from coming off the adhesive tape Wt with the reduced adhesive force. Also, in the cleaning of the wafer We with the cleaning liquid Cw while rotating at the first rotation speed W1V, since a large centrifugal force is applied to the wafer We, foreign matter Cn can be effectively removed together with the cleaning liquid Cw. Further, in the cleaning of the wafer We with the cleaning liquid Cw while rotating at the second rotation speed W2V, since a small centrifugal force is applied to the wafer We, the cleaning liquid Cw can penetrate to a deeper position between the semiconductor chips Ch. As a result, foreign matter Cn at a deep position can be removed, so that the cleaning effect of the wafer We can be improved.

[0084] Also, in the first embodiment, as described above, the wafer cleaning apparatus 100 includes a wafer drying unit 6 that dries the wafer We in a state where it is disposed at a position overlapping the ultraviolet irradiation unit 5 in a plan view after cleaning the wafer We. Thereby, since the wafer drying unit 6 and the ultraviolet irradiation unit 5 are disposed at the same location in the horizontal direction, even when the wafer drying unit 6 is disposed in addition to the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5, an increase in the size of the apparatus in the horizontal direction can be further suppressed.

[0085] Also, in the first embodiment, as described above, the ultraviolet irradiation unit 5 includes a plurality of ultraviolet light sources 51a arranged such that when the wafer We is rotated by the wafer holding and rotating unit 3, the wafer sticking portion Wt1 of the adhesive tape Wt is evenly irradiated with ultraviolet light. As a result, when the wafer We is rotated by the wafer holding and rotating unit 3, the wafer sticking portion Wt1 of the adhesive tape Wt can be evenly irradiated with ultraviolet light, so that the adhesive layer of the adhesive tape Wt can be evenly cured. As a result, when picking up the semiconductor chip Ch, the semiconductor chip Ch can be easily separated from the adhesive layer of the adhesive tape Wt.

[0086] Also, in the first embodiment, as described above, the cleaning liquid supply unit 4 includes a cleaning nozzle 41 that rotates between the rotation center position Pc of the wafer holding and rotating unit 3 and the retracted position Pe1 outside the wafer holding and rotating unit 3 in a plan view, and has a supply port 41a for supplying the cleaning liquid Cw to the surface of the wafer We. While supplying the cleaning liquid Cw in a state where the cleaning nozzle 41 is rotated to the rotation center position Pc to clean the wafer We, the control unit 10 performs control to irradiate ultraviolet light from the ultraviolet irradiation unit 5 toward the wafer sticking portion Wt1 of the adhesive tape Wt while coating the surface of the wafer We with the supplied cleaning liquid Cw. As a result, since the cleaning liquid Cw is supplied from the cleaning nozzle 41 to the rotation center position Pc of the wafer We, the cleaning liquid Cw can be evenly spread by the centrifugal force of the wafer We in the radial direction of the wafer We. As a result, the wafer We in a state of being divided into a plurality of semiconductor chips Ch can be evenly coated with the cleaning liquid Cw, so that the air near the surface of the wafer We can be removed as a whole.

[0087] Also, in the first embodiment, as described above, the wafer cleaning method includes, in parallel with the cleaning of the wafer We by supplying the cleaning liquid Cw from the cleaning liquid supply unit 4 to the surface of the wafer We while holding and rotating it by the wafer holding and rotating unit 3, a step S3 of irradiating ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer sticking portion Wt1 of the adhesive tape Wt. Thereby, since air can be removed from the vicinity of the adhesion portion between the edge of the semiconductor chip Ch and the adhesive tape Wt by the coated cleaning liquid Cw, a chemical reaction between the ultraviolet rays and the air is prevented, and at the adhesion portion between the edge of the semiconductor chip Ch and the adhesive tape Wt, a chemical reaction can be caused to cure the adhesive layer of the adhesive tape Wt by ultraviolet rays. Further, since the ultraviolet rays are irradiated in parallel with the cleaning of the wafer We by the cleaning liquid Cw, a wafer cleaning method capable of efficiently performing the cleaning of the wafer We and the irradiation of the ultraviolet rays can be provided.

[0088] Also, in the first embodiment, as described above, the step S3 of irradiating ultraviolet rays includes a step of irradiating ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer sticking portion Wt1 while coating the surface of the wafer We with the supplied cleaning liquid Cw, at a position overlapping the supply port 41a of the cleaning liquid Cw of the cleaning liquid supply unit 4 in a plan view. Thereby, since the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are arranged at the same location in the horizontal direction, even when both the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are arranged, an increase in the size of the apparatus in the horizontal direction can be suppressed.

[0089] [Second Embodiment] With reference to FIGS. 13 and 14, the configuration of the wafer cleaning apparatus 200 according to the second embodiment will be described. In the second embodiment, the wafer cleaning apparatus 200 includes a film thickness measurement unit 211. Note that, in the second embodiment, detailed description of the same configuration as that of the first embodiment will be omitted.

[0090] (Wafer Cleaning Apparatus) As shown in FIG. 13, the wafer cleaning apparatus 200 of the second embodiment is configured to perform cleaning to remove foreign matter Cn adhering when a wafer We is divided into a plurality of semiconductor chips Ch (see FIG. 14).

[0091] The wafer cleaning apparatus 200 includes a cassette unit 1, a wafer transfer unit 2, a wafer holding and rotating unit 3, a cleaning liquid supply unit 4, an ultraviolet irradiation unit 5, a wafer drying unit 6, a lifting mechanism 7 (see FIG. 3), a cover unit 8, a lid unit 9 (see FIG. 3), a control unit 10, and a film thickness measurement unit 211.

[0092] Here, the vertical direction is defined as the Z direction, the upward direction is the Z1 direction, and the downward direction is the Z2 direction. The horizontal direction orthogonal to the Z direction is the X direction, one side of the X direction is the X1 direction, and the other side of the X direction is the X2 direction. Also, the horizontal direction orthogonal to the X direction is the Y direction, one side of the Y direction is the Y1 direction, and the other side of the Y direction is the Y2 direction.

[0093] As shown in FIG. 14, the film thickness measurement unit 211 is configured to acquire measurement values for measuring the film thickness of the cleaning liquid Cw supplied to the surface of the wafer We. The film thickness measurement unit 211 is configured to measure the film thickness using a laser. The film thickness measurement unit 211 is configured to output to the control unit 10 a measurement value based on the reflected light reflected from the surface of the cleaning liquid Cw and a measurement value based on the reflected light that has passed through the cleaning liquid Cw and is reflected from the surface of the wafer We. The control unit 10 performs control to calculate the film thickness of the cleaning liquid Cw based on the above two measurement values.

[0094] The film thickness measurement unit 211 includes a laser measurement unit 211a, a mounting unit 211b, and a drive unit 211c. The laser measurement unit 211a is a part that projects a laser and receives the reflected laser. The mounting unit 211b is a member to which the laser measurement unit 211a is attached at its tip. The film thickness measurement unit 211 is configured to rotate the laser measurement unit 211a between a position in front of the rotation center position Pc of the wafer holding and rotating unit 3 and a retracted position Pe21 outside the wafer holding and rotating unit 3 in a plan view. The drive unit 211c is configured to generate a driving force that rotates the mounting unit 211b in the circumferential direction around the rotation center axis Cr21. The drive unit 211c has, for example, a motor and a speed reduction mechanism, etc.

[0095] Thereby, the laser measurement unit 211a is arranged at a position in front of the rotation center position Pc by the mounting unit 211b rotated in the Rt21 direction by the drive unit 211c. The laser measurement unit 211a is arranged at the retracted position Pe21 by the mounting unit 211b rotated in the Rt22 direction by the drive unit 211c. The film thickness measurement unit 211 is arranged at a position that overlaps with the ultraviolet irradiation unit 5 in a plan view while measuring the film thickness of the cleaning liquid Cw. Specifically, while measuring the film thickness of the cleaning liquid Cw, the laser measurement unit 211a is configured to rotate in each of the Rt21 direction and the Rt22 direction within a range that overlaps with the ultraviolet irradiation unit 5 in a plan view.

[0096] (Weak cleaning) The control unit 10 performs control to irradiate ultraviolet rays from the ultraviolet irradiation unit 5 toward the wafer attachment portion Wt1 while coating the surface of the wafer We with the supplied cleaning liquid Cw in parallel with the cleaning of the wafer We by supplying the cleaning liquid Cw from the cleaning liquid supply unit 4 while rotating the divided wafer We held by the wafer holding and rotating unit 3 (see FIG. 11).

[0097] As shown in FIG. 14, when performing control to irradiate ultraviolet rays in parallel with the cleaning of the wafer We, the control unit 10 of the second embodiment performs control to adjust the supply amount of the cleaning liquid Cw from the cleaning liquid supply unit 4 based on the film thickness of the cleaning liquid Cw measured by the film thickness measurement unit 211.

[0098] Specifically, the control unit 10 rotates the wafer holding and rotating unit 3 and controls the rotation of the laser measurement unit 211a in each of the Rt21 direction and the Rt22 direction while irradiating ultraviolet rays from the ultraviolet irradiation unit 5. While rotating the laser measurement unit 211a in each of the Rt21 direction and the Rt22 direction, every time the wafer holding and rotating unit 3 rotates by a predetermined rotation angle, the control unit 10 uses the laser measurement unit 211a to measure based on the reflected light reflected from the surface of the cleaning liquid Cw and the reflected light transmitted through the cleaning liquid Cw and reflected from the surface of the wafer We. value. The control unit 10 performs control to calculate the film thickness of the cleaning liquid Cw based on the two measured values obtained every time it rotates by a predetermined rotation angle.

[0099] Based on the fact that the film thickness of the cleaning liquid Cw is less than the threshold value, the control unit 10 adjusts the supply amount of the cleaning liquid Cw to the supply amount added with a preset amount, and then controls the supply of the cleaning liquid Cw from the cleaning liquid supply unit 4. Based on the fact that the film thickness of the cleaning liquid Cw is greater than or equal to the threshold value, the control unit 10 maintains the current supply amount of the cleaning liquid Cw and controls the supply of the cleaning liquid Cw from the cleaning liquid supply unit 4.

[0100] Note that since the other configurations of the second embodiment are the same as those of the first embodiment, the description thereof is omitted.

[0101] (Effect of the second embodiment) In the second embodiment, the following effects can be obtained.

[0102] In the second embodiment, as described above, similar to the first embodiment, the wafer cleaning apparatus 200 is arranged at a position overlapping the supply port 41a of the cleaning liquid Cw of the cleaning liquid supply unit 4 in a plan view in a state where the cleaning liquid Cw is supplied, and the wafer We of the adhesive tape Wt is adhered. An ultraviolet irradiation unit 5 that irradiates ultraviolet rays from below is provided on the attached wafer attachment portion Wt1. Thereby, even when both the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are arranged, an increase in the size of the apparatus in the horizontal direction can be suppressed.

[0103] Further, in the second embodiment, as described above, the wafer cleaning apparatus 200 includes a film thickness measurement unit 211 that measures the film thickness of the cleaning liquid Cw supplied to the surface of the wafer We. When performing control to irradiate ultraviolet rays in parallel with the cleaning of the wafer We, the control unit 10 performs control to adjust the supply amount of the cleaning liquid Cw from the cleaning liquid supply unit 4 based on the film thickness of the cleaning liquid Cw measured by the film thickness measurement unit 211. Thereby, since the cleaning liquid Cw can surely coat between the plurality of semiconductor chips Ch, air can be surely removed from the vicinity of the adhesion portion between the edge of the semiconductor chip Ch and the adhesive tape Wt by the coated cleaning liquid Cw. As a result, a chemical reaction in which the adhesive layer of the adhesive tape Wt is cured by ultraviolet rays can be caused without causing a chemical reaction between the ultraviolet rays and the air.

[0104] Further, in the second embodiment, as described above, the film thickness measurement unit 211 includes a laser measurement unit 211a disposed at a position overlapping the ultraviolet irradiation unit 5 in a plan view while measuring the film thickness of the cleaning liquid Cw. Thereby, since the laser measurement unit 211a and the ultraviolet irradiation unit 5 are disposed at the same location in the horizontal direction, even when the laser measurement unit 211a is disposed in addition to the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5, an increase in the size of the apparatus in the horizontal direction can be suppressed.

[0105] Note that since the other effects of the second embodiment are the same as those of the first embodiment, the description thereof is omitted.

[0106] [Third Embodiment] With reference to FIG. 15, the configuration of the wafer processing apparatus 300 according to the third embodiment will be described. In the third embodiment, a wafer cleaning unit 311 is installed in the wafer processing apparatus 300. Note that in the third embodiment, detailed description of the same configuration as that of the second embodiment is omitted.

[0107] (Wafer Processing Apparatus) As shown in FIG. 15, the wafer processing apparatus 300 of the third embodiment includes a base 301, a cassette unit 302, a lift-up hand unit 303, a suction hand unit 304, a cold air supply unit 305, a cooling unit 306, an expand unit 307, an expansion maintenance member 308, a heat shrink unit 309, a clamp unit 310, a wafer cleaning unit 311, and a control unit 312. Note that the expand unit 307 is an example of the "dicing unit" in the claims.

[0108] The base 301 is a base on which the cassette unit 302 and the lift-up hand unit 303 are installed. The cassette unit 302 is configured to be able to accommodate a plurality of wafer ring structures W. The lift-up hand unit 303 is configured to take out the wafer ring structure W from the cassette unit 302. Further, the lift-up hand unit 303 is configured to accommodate the wafer ring structure W in the cassette unit 302.

[0109] The suction hand unit 304 is configured to suck the frame Wf of the wafer ring structure W from the Z1 direction side. The suction hand unit 304 is configured to convey the wafer ring structure W to each of the expand unit 307 side and the wafer cleaning unit 311 side in a state where the frame Wf is sucked from the Z1 direction side. The cold air supply unit 305 is configured to supply cold air to the adhesive tape Wt from the Z1 direction side. The cooling unit 306 is configured to cool the adhesive tape Wt from the Z2 direction side. The expand unit 307 is configured to divide the wafer We along the dividing line by expanding the adhesive tape Wt cooled by the cold air supply unit 305 and the cooling unit 306.

[0110] The expansion and maintenance member 308 is configured to press the adhesive tape Wt from the Z1 direction side so that the adhesive tape Wt near the wafer We does not contract due to heating by the heat shrinkage part 309. The heat shrinkage part 309 is configured to shrink the adhesive tape Wt expanded by the expand part 307 by heating while maintaining the gap between the plurality of semiconductor chips Ch. The clamp part 310 is configured to grip the frame Wf of the wafer ring structure W.

[0111] The wafer cleaning part 311 is configured to clean the wafer We after the above expansion. The wafer cleaning part 311 includes, among the components of the wafer cleaning apparatus 200 of the second embodiment, a wafer holding and rotating part 3, a cleaning liquid supply part 4, an ultraviolet irradiation part 5, a wafer drying part 6, a lifting mechanism 7 (see FIG. 3), a cover part 8, a lid part 9 (see FIG. 3), and a film thickness measurement part 211.

[0112] The control part 312 of the third embodiment performs the expansion by the expand part 307 and the heating by the heat shrinkage part 309 and the cleaning of the wafer We by the wafer cleaning part 311 in parallel. Specifically, after expanding the first wafer We by the expand part 307, the control part 312 controls the adsorption hand part 304 to convey the first wafer We to the wafer cleaning part 311 to clean the wafer We. At this time, during the cleaning of the wafer We, the control part 312 performs control of expanding by the expand part 307 and heating by the heat shrinkage part 309 on the next second wafer We conveyed by the adsorption hand part 304. Thereby, the expansion by the expand part 307 and the heating by the heat shrinkage part 309 and the cleaning of the wafer We by the wafer cleaning part 311 are performed efficiently.

[0113] Note that since the other configurations of the third embodiment are the same as those of the second embodiment, the description thereof is omitted.

[0114] (Effect of the Third Embodiment) In the third embodiment, the following effects can be obtained.

[0115] In the third embodiment, as described above, similar to the second embodiment, the wafer cleaning unit 311 is disposed at a position overlapping with the supply port 41a of the cleaning liquid Cw of the cleaning liquid supply unit 4 in a plan view in a state where the cleaning liquid Cw is supplied, and includes an ultraviolet irradiation unit 5 that irradiates ultraviolet rays downward onto the wafer attachment portion Wt1 of the adhesive tape Wt to which the wafer We is attached. Thereby, even when both the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are disposed, an increase in the size of the apparatus in the horizontal direction can be suppressed.

[0116] Further, in the third embodiment, as described above, the wafer cleaning unit 311 of the wafer processing apparatus 300 includes a cleaning liquid supply unit 4 that supplies a cleaning liquid Cw for removing foreign matter Cn to the surface of the wafer We held by the wafer holding and rotating unit 3. Further, the wafer cleaning unit 311 is disposed at a position overlapping with the supply port 41a of the cleaning liquid Cw of the cleaning liquid supply unit 4 in a plan view in a state where the cleaning liquid Cw is supplied from the cleaning liquid supply unit 4, and includes an ultraviolet irradiation unit 5 that irradiates ultraviolet rays downward onto the wafer attachment portion Wt1 of the adhesive tape Wt to which the wafer We is attached. Thereby, since the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are disposed at the same location in the horizontal direction, it is possible to provide a wafer processing apparatus 300 capable of suppressing an increase in the size of the apparatus in the horizontal direction even when both the cleaning liquid supply unit 4 and the ultraviolet irradiation unit 5 are disposed.

[0117] Note that since other effects of the third embodiment are the same as those of the second embodiment, the description thereof is omitted.

[0118] [Modification Example] It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The scope of the present invention is shown not by the description of the above-described embodiments but by the scope of claims, and further includes all changes (modification examples) within the meaning and scope equivalent to the scope of claims.

[0119] For example, in the above-described third embodiment, an example was shown in which the wafer processing apparatus 300 includes an expand section 307 and a wafer cleaning section 311. However, the present invention is not limited to this. In the present invention, as in the first modification example shown in FIG. 16, the wafer processing apparatus 400 may include a cassette section 401, a wafer transfer section 402, a transfer head 403, a transfer head 404, a laser irradiation section 405, a wafer cleaning section 406, and a control section 407 without providing an expand section. Also, a plurality of wafer cleaning sections 406 may be installed. Note that the laser irradiation section 405 is an example of the "dicing section" in the claims.

[0120] Further, in the above-described second and third embodiments, an example was shown in which when the control section 10 performs control to irradiate ultraviolet rays in parallel with the cleaning of the wafer We, the control section 10 performs control to adjust the supply amount of the cleaning liquid Cw from the cleaning liquid supply section 4 based on the film thickness of the cleaning liquid Cw measured by the film thickness measurement section 211. However, the present invention is not limited to this. In the present invention, when the control section performs control to irradiate ultraviolet rays in parallel with the cleaning of the wafer, the control section may perform control to adjust the rotation speed of the wafer by the wafer holding and rotating section based on the film thickness of the cleaning liquid measured by the film thickness measurement section. In this case, based on the fact that the film thickness of the cleaning liquid is less than the threshold value, the control section performs control to lower the rotation speed of the wafer by a preset rotation speed and then continue the rotation of the wafer by the wafer holding and rotating section.

[0121] Further, in the above-described first to third embodiments, an example was shown in which the supply port 41a rotates between the rotation center position Pc of the wafer holding and rotating section 3 and the retracted position Pe1 outside the wafer holding and rotating section 3 in a plan view by the cleaning nozzle 41. However, the present invention is not limited to this. In the present invention, the supply port may move between the rotation center position and the retracted position by linear movement.

[0122] Further, in the above-described second and third embodiments, an example was shown in which the film thickness measurement section 211 includes a laser measurement section 211a. However, the present invention is not limited to this. In the present invention, the film thickness measurement section may be a camera or the like as long as it is configured to acquire the film thickness based on the reflected light.

[0123] In the first to third embodiments described above, an example was shown in which the control unit 10 (310) performs intensive cleaning while continuously supplying the cleaning liquid Cw by the cleaning liquid supply unit 4. However, the present invention is not limited to this. In the present invention, the control unit may perform intensive cleaning while intermittently supplying the cleaning liquid by the cleaning liquid supply unit.

[0124] In the first to third embodiments described above, an example was shown in which the control unit 10 (310) performs weak cleaning and ultraviolet irradiation in parallel while continuously supplying the cleaning liquid Cw by the cleaning liquid supply unit 4. However, the present invention is not limited to this. In the present invention, the control unit may perform weak cleaning and ultraviolet irradiation in parallel while intermittently supplying the cleaning liquid by the cleaning liquid supply unit. Further, when the film thickness of the cleaning liquid adhering to the wafer after intensive cleaning is equal to or greater than the threshold value, the control unit may perform weak cleaning and ultraviolet irradiation in parallel without supplying the cleaning liquid by the cleaning liquid supply unit.

[0125] In the first to third embodiments described above, an example was shown in which all of the plurality of ultraviolet light sources 51a are lit when the wafer holding and rotating unit 3 rotates the wafer We in the R direction. However, the present invention is not limited to this. In the present invention, only the necessary ultraviolet light sources may be lit according to the diameter of the wafer.

[0126] In the first to third embodiments described above, an example was shown in which a plurality of ultraviolet light source groups 51 having the same rectangular shape are arranged in a matrix so as to overlap the wafer We in the Z direction. However, the present invention is not limited to this.

[0127] In the present invention, as in the second modification shown in FIG. 17, a plurality of square ultraviolet light source groups 551a and a plurality of rectangular ultraviolet light source groups 551b having a dimension in the Y direction larger than that of the plurality of ultraviolet light source groups 551a may be arranged in a matrix so as to overlap with the wafer We. As in the third modification shown in FIG. 18, a plurality of ultraviolet light source groups 651 having the same rectangular shape and a large dimension in the Y direction may be arranged in a matrix so as to overlap with the wafer We. As in the fourth modification shown in FIG. 19, in a plurality of ultraviolet light source groups 751 having the same rectangular shape, the number of ultraviolet light source groups 751 at each end on the Y1 direction side and the Y2 direction side is reduced compared to the number of ultraviolet light source groups 751 in the central portion, and the center position of each of the plurality of ultraviolet light source groups 751 at the end is shifted with respect to the center position of the plurality of ultraviolet light source groups 751 in the central portion. Even in this case, a plurality of ultraviolet light source groups 751 having the same rectangular shape are arranged in a matrix so as to overlap with the wafer We.

[0128] In the first to third embodiments described above, for the sake of convenience of explanation, an example in which the control process of the control unit 10 (310) is described using a flow-driven flowchart that performs processes in order along the process flow has been shown, but the present invention is not limited to this. In the present invention, the control process of the control unit may be performed by an event-driven process that executes processes in units of events. In this case, it may be performed in a completely event-driven manner, or may be performed by combining event driving and flow driving.

Explanation of Reference Numerals

[0129] 3 Wafer holding and rotating unit 4 Cleaning liquid supply unit 5 Ultraviolet irradiation unit 6 Wafer drying unit 10, 310, 407 Control unit 41 Cleaning nozzle 41a Supply port 51a Ultraviolet light source 100, 200 Wafer cleaning apparatus 211 Film thickness measurement unit 211a Laser measurement unit 300, 400 Wafer processing apparatuses 307 Expand section (dicing section) 311 Wafer cleaning section 312 Control section 405 Laser irradiation section (dicing section) 406 Wafer cleaning section Ch Semiconductor chip Cn Foreign matter Cw Cleaning liquid Pc Rotation center position Pe1 Retracted position W1V First rotation speed W2V Second rotation speed We Wafer Wf Frame Wt Adhesive tape Wt1 Wafer attachment part

Claims

1. holding a frame attached to an adhesive tape together with a wafer divided into a plurality of semiconductor chips, and a wafer holding and rotating unit that rotates the wafer while holding the frame; a cleaning liquid supply unit that supplies a cleaning liquid for removing foreign matter attached when the wafer is divided into the plurality of semiconductor chips to the surface of the wafer held by the wafer holding and rotating unit; A wafer cleaning apparatus comprising: an ultraviolet irradiation unit that is disposed at a position overlapping the supply port of the cleaning liquid of the cleaning liquid supply unit in a plan view and irradiates ultraviolet rays from below to a wafer attachment portion of the adhesive tape to which the wafer is attached, while the cleaning liquid is supplied from the cleaning liquid supply unit to the wafer held by the wafer holding and rotating unit.

2. Further comprising a control unit that controls to irradiate ultraviolet rays from the ultraviolet irradiation unit toward the wafer attachment portion of the adhesive tape while coating the surface of the wafer with the supplied cleaning liquid in parallel with the cleaning of the wafer by supplying the cleaning liquid from the cleaning liquid supply unit to the surface of the wafer rotated while being held by the wafer holding and rotating unit. The wafer cleaning apparatus according to claim 1.

3. The control unit is configured to perform control to irradiate ultraviolet rays from the ultraviolet irradiation unit toward the wafer attachment portion of the adhesive tape while coating the surface of the wafer with the supplied cleaning liquid in parallel with the cleaning of the wafer, after cleaning the wafer with the cleaning liquid while rotating the wafer at a first rotation speed while being held by the wafer holding and rotating unit, and then rotating the wafer at a second rotation speed slower than the first rotation speed while being held by the wafer holding and rotating unit. The wafer cleaning apparatus according to claim 2.

4. Further comprising a film thickness measurement unit that measures the film thickness of the cleaning liquid supplied to the surface of the wafer, When the control unit performs control to irradiate ultraviolet rays in parallel with the cleaning of the wafer, based on the film thickness of the cleaning liquid measured by the film thickness measurement unit, it controls to adjust at least one of the rotation speed of the wafer by the wafer holding and rotating unit and the supply amount of the cleaning liquid from the cleaning liquid supply unit. The wafer cleaning apparatus according to claim 2.

5. The film thickness measurement unit includes a laser measurement unit disposed at a position overlapping with the ultraviolet ray irradiation unit in a plan view in a state of measuring the film thickness of the cleaning liquid. The wafer cleaning apparatus according to claim 4.

6. The wafer cleaning apparatus according to claim 1, further comprising a wafer drying unit configured to dry the wafer in a state where the wafer is disposed at a position overlapping with the ultraviolet ray irradiation unit in a plan view after the cleaning of the wafer.

7. The ultraviolet ray irradiation unit includes a plurality of ultraviolet ray light sources arranged such that ultraviolet rays are evenly irradiated on the wafer sticking portion of the adhesive tape by rotating the wafer by the wafer holding and rotating unit. The wafer cleaning apparatus according to claim 1.

8. The cleaning liquid supply unit includes a cleaning nozzle that rotates between a rotation center position of the wafer holding and rotating unit and a retracted position outside the wafer holding and rotating unit in a plan view, and has a supply port for supplying the cleaning liquid to the surface of the wafer. The control unit is configured to perform control to irradiate ultraviolet rays from the ultraviolet ray irradiation unit toward the wafer sticking portion of the adhesive tape while coating the surface of the wafer with the supplied cleaning liquid in parallel with the cleaning of the wafer by supplying the cleaning liquid with the cleaning nozzle rotated to the rotation center position. The wafer cleaning apparatus according to claim 2.

9. A dicing unit that divides a wafer provided with a plurality of semiconductor chips into the plurality of semiconductor chips. And a wafer cleaning unit configured to clean the wafer after division by the dicing unit. The wafer cleaning unit is a wafer holding and rotating unit that holds a frame attached to an adhesive tape together with the wafer and rotates the wafer while holding the frame, a cleaning liquid supply unit that supplies a cleaning liquid for removing foreign matter attached when the wafer is divided into the plurality of semiconductor chips to the surface of the wafer held by the wafer holding and rotating unit, and an ultraviolet irradiation unit that is disposed at a position overlapping the supply port of the cleaning liquid of the cleaning liquid supply unit in a plan view in a state where the cleaning liquid is supplied from the cleaning liquid supply unit to the wafer held by the wafer holding and rotating unit, and irradiates ultraviolet rays from below onto the wafer attachment portion of the adhesive tape, the wafer processing apparatus.

10. a step of holding, by a wafer holding and rotating unit, a frame attached together to an adhesive tape to which a wafer divided into a plurality of semiconductor chips is attached; a step of irradiating ultraviolet rays from an ultraviolet irradiation unit toward the wafer attachment portion of the adhesive tape in parallel with cleaning of the wafer by supplying a cleaning liquid from a cleaning liquid supply unit to the surface of the wafer rotated while being held by the wafer holding and rotating unit, the wafer cleaning method.

11. The step of irradiating ultraviolet rays includes a step of irradiating ultraviolet rays from the ultraviolet irradiation unit disposed at a position overlapping the supply port of the cleaning liquid of the cleaning liquid supply unit in a plan view toward the wafer attachment portion while coating the surface of the wafer with the supplied cleaning liquid, the wafer cleaning method according to claim 10.

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