Imaging device
The imaging device addresses the challenges of dynamic range and power consumption by using a CMOS image sensor with a specific semiconductor configuration and circuit design, resulting in improved image quality and extended usage in portable devices.
JP2025092584AInactive Publication Date: 2025-06-19SEMICON ENERGY LAB CO LTD
Patent Information
- Application Number
- JP2025053260
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2014-07-04
- Filing Date
- 2025-03-27
- Publication Date
- 2025-06-19
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 2025092584000001_ABST
Abstract
To provide an imaging device capable of achieving satisfactory productivity and improved in dynamic range.SOLUTION: An imaging device comprises pixels including photoelectric conversion elements each including a p-type semiconductor, an n-type semiconductor and an i-type semiconductor, and a pixel driving circuit. The total of an area of the i-type semiconductor which does not overlap with any of a metal material and a semiconductor material which are included in the pixel driving circuit in plan view is equal to or larger than preferably 65% of an area of the whole i-type semiconductor, more preferably 80%, and further preferably 90%. Providing more than one photoelectric conversion element in one semiconductor layer enables the decrease in the number of steps for separating respective photoelectric conversion elements. The i-type semiconductor layer that each photoelectric conversion element has is separated by the p-type semiconductor or n-type semiconductor.SELECTED DRAWING: Figure 17
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Citation Information
Patent Citations
Image sensor and image sensor integrated type active matrix type display device
US7046282B1