Inspection device, cutting device, and manufacturing method of semiconductor component

Abstract

To provide an inspection device capable of appropriately setting a bad mark region in an image to which an inspection object is reflected, and thus, improving an accuracy of a bad mark inspection.SOLUTION: An inspection device comprises a control part. The control part previously sets a bad mark region as a region where a bad mark is reflected in the case where the bad mark is contained in an inspection object in a setting image where the inspection object is reflected, inspects the bad mark region in the inspection image, and thus, inspects whether or not the bad mark is contained in the inspection object to be reflected to the inspection image. By previously setting the bad mark region, a setting image to which a good item as an inspection object excluding the bad mark and a defective item as an inspection object containing the bad mark are reflected are acquired, the bad mark region can be determined by comparing luminance of a good item region where the good item is reflected in the setting image with luminance of a defective item region where the defective item is reflected in the setting image.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to an inspection apparatus, a cutting apparatus, and a method for manufacturing a semiconductor component.

Background Art

[0002] In a production line of products such as semiconductor components, a bad mark indicating that the product is defective may be attached to the product. In this case, often, in a subsequent inspection apparatus, a bad mark inspection is performed to inspect whether a bad mark is attached to the product. Patent Document 1 discloses a method for detecting a bad mark by image processing.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In order to accurately detect a bad mark, in an image of the product, it is desirable to set as accurately as possible a region (bad mark region) where the bad mark will be attached if the product includes the bad mark. However, since the position, shape, etc. of the bad mark attached to the product vary depending on the product, the position of the bad mark region in the image often does not uniformly determined. Also, depending on the mounting position, angle, etc. of the camera, the position of the bad mark region in the image will change. Therefore, in many cases, the bad mark region has to be set manually. As a result, there are problems such as variations in the settings by the operator, and it is difficult to ensure the accuracy of the bad mark inspection.

[0005] An object of the present invention is to provide an inspection apparatus, a cutting apparatus, and a method for manufacturing a semiconductor component, which can appropriately set a bad mark region in an image depicting an object to be inspected, thereby improving the accuracy of bad mark inspection.

Means for Solving the Problems

[0006] An inspection apparatus according to an aspect of the present invention includes a control unit. The control unit preliminarily sets a bad mark region, which is a region where a bad mark appears when the object to be inspected includes a bad mark, in a setting image in which the object to be inspected is depicted, and inspects the bad mark region in the inspection image to inspect whether the object to be inspected depicted in the inspection image includes a bad mark. Setting the bad mark region in advance includes acquiring a setting image in which a good product, which is an object to be inspected that does not include a bad mark, and a defective product, which is an object to be inspected that includes a bad mark, are depicted, and comparing the luminance of the good product region in which the good product is depicted with the luminance of the defective product region in which the defective product is depicted in the setting image to determine the bad mark region.

[0007] A cutting apparatus according to another aspect of the present invention includes a cutting mechanism that cuts a substrate including a plurality of semiconductor components to individualize the semiconductor components, and the above-described inspection apparatus that inspects the individualized semiconductor components as objects to be inspected.

[0008] A method for manufacturing a semiconductor component according to still another aspect of the present invention includes a step of cutting a substrate including a plurality of semiconductor components by a cutting mechanism to individualize the semiconductor components, and a step of inspecting the individualized semiconductor components as objects to be inspected using the above-described inspection apparatus.

Effects of the Invention

[0009] According to the present invention, a bad mark region can be appropriately set in an image depicting an object to be inspected, thereby improving the accuracy of bad mark inspection.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7A

Figure 7B

Figure 7C

Figure 8

Figure 9

Embodiments for Carrying Out the Invention

[0011] Hereinafter, embodiments according to one aspect of the present invention (hereinafter, also referred to as "the present embodiment") will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and their description will not be repeated. Also, each drawing is schematically drawn with appropriate omissions or exaggerations of the subject for ease of understanding.

[0012] [1. Configuration] <1-1. Overall Configuration of the Cutting Device> FIG. 1 is a plan view schematically showing a cutting device 1 according to the present embodiment. The cutting device 1 is configured to cut a package substrate (object to be cut) to separate the package substrate into a plurality of semiconductor components (package components). In the package substrate, a substrate or a lead frame on which a semiconductor chip is mounted is resin-sealed.

[0013] Examples of the package substrate include a BGA (Ball Grid Array) package substrate, an LGA (Land Grid Array) package substrate, a CSP (Chip Size Package) package substrate, an LED (Light Emitting Diode) package substrate, and a QFN (Quad Flat No-leaded) package substrate.

[0014] Further, the cutting device 1 is configured to inspect each of the plurality of separated semiconductor components. In the cutting device 1, an image of each semiconductor component is captured, and each semiconductor component is inspected based on the image. Inspection data is generated through the inspection, and each semiconductor component is classified as "good product" or "defective product".

[0015] In this example, a package substrate P1 is used as the object to be cut, and the package substrate P1 is separated into a plurality of semiconductor components S1 by the cutting device 1. Hereinafter, of the two surfaces of the package substrate P1, the resin-sealed surface is referred to as the mold surface, and the surface opposite to the mold surface is referred to as the ball / lead surface.

[0016] As shown in FIG. 1, the cutting device 1 includes, as components, a cutting module (cutting mechanism) A1 and an inspection / storage module (inspection device) B1. The cutting module A1 is configured to manufacture a plurality of semiconductor components S1 by cutting the package substrate P1. The inspection / storage module B1 inspects each of the plurality of manufactured semiconductor components S1 as an inspection object, and then stores the semiconductor components S1 in a tray. In the cutting device 1, each component is detachable and replaceable with respect to other components.

[0017] The cutting module A1 mainly includes a substrate supply unit 3, a positioning unit 4, a cutting table 5, a spindle unit 6, and a conveying unit 7.

[0018] The substrate supply unit 3 supplies the package substrates P1 to the positioning unit 4 one by one by pushing out the package substrates P1 one by one from a magazine M1 that houses a plurality of package substrates P1. At this time, the package substrates P1 are arranged with the ball / lead surface facing upward.

[0019] The positioning unit 4 positions the package substrate P1 by placing the package substrate P1 pushed out from the substrate supply unit 3 on the rail unit 4a. Then, the positioning unit 4 conveys the positioned package substrate P1 to the cutting table 5.

[0020] The cutting table 5 holds the package substrate P1 to be cut. In this example, a cutting device 1 having a twin-cut table configuration with two cutting tables 5 is illustrated. The cutting table 5 includes a holding member 5a, a rotation mechanism 5b, and a movement mechanism 5c. The holding member 5a holds the package substrate P1 by adsorbing the package substrate P1 conveyed by the positioning unit 4 from below. The rotation mechanism 5b can rotate the holding member 5a in the θ1 direction of FIG. 1 (that is, rotate in the horizontal plane of XY in FIG. 1). The movement mechanism 5c can move the holding member 5a along the Y-axis in the figure.

[0021] The spindle unit 6 individualizes the package substrate P1 into a plurality of semiconductor components S1 by cutting the package substrate P1. In this example, a cutting device 1 having a twin-spindle configuration with two spindle units 6 is illustrated. The spindle unit 6 is movable along the X-axis and Z-axis in the figure. Note that the cutting device 1 may have a single-spindle configuration with one spindle unit 6.

[0022] The spindle unit 6 includes a blade 6a and a rotating shaft 6c. By rotating at high speed, the blade 6a cuts the package substrate P1 and separates the package substrate P1 into a plurality of semiconductor components S1. The blade 6a is mounted on the rotating shaft 6c while being clamped by first and second flanges (not shown). The first and second flanges are fixed to the rotating shaft 6c by a fastening member (not shown) such as a nut. The first flange is also referred to as the inner flange, and the second flange is also referred to as the outer flange.

[0023] The spindle unit 6 is provided with a cutting water nozzle, a cooling water nozzle, a cleaning water nozzle (all not shown), etc. The cutting water nozzle injects cutting water toward the blade 6a rotating at high speed. The cooling water nozzle injects cooling water. The cleaning water nozzle injects cleaning water for cleaning cutting chips and the like.

[0024] Referring to FIG. 1 again, after the cutting table 5 adsorbs the package substrate P1, the package substrate P1 is imaged by the first position confirmation camera 5d, and the position of the package substrate P1 is confirmed. The confirmation using the first position confirmation camera 5d is, for example, the confirmation of the position of a mark provided on the package substrate P1. The mark is, for example, a mark for determining the cutting position of the package substrate P1.

[0025] Thereafter, the cutting table 5 moves along the Y-axis in the figure toward the spindle unit 6. After the cutting table 5 moves below the spindle unit 6, alignment is performed, and then the package substrate P1 is cut by relatively moving the cutting table 5 and the spindle unit 6. Each time the package substrate P1 is cut by the blade 6a of the spindle unit 6, the package substrate P1 is imaged and confirmed by the second position confirmation camera 6b provided in the spindle unit 6. The confirmation using the second position confirmation camera 6b is, for example, the confirmation of the cut position and the cut width of the package substrate P1.

[0026] After the cutting of the package substrate P1 is completed, the cutting table 5 moves away from the spindle unit 6 along the Y-axis in the figure while adsorbing a plurality of singulated semiconductor components S1. In this moving process, the upper surface (ball / lead surface) of the semiconductor component S1 is cleaned and dried by the first cleaner 5e.

[0027] The transfer unit 7 adsorbs the semiconductor component S1 held on the cutting table 5 from above and transfers the semiconductor component S1 to the inspection table 11 of the inspection and storage module B1. In this transfer process, the lower surface (mold surface) of the semiconductor component S1 is cleaned and dried by the second cleaner 7a.

[0028] The inspection and storage module B1 mainly includes an inspection table 11, a first optical inspection camera 12, a second optical inspection camera 13, lighting units 16, 17, an arrangement unit 14, and an extraction unit 15. Note that the first optical inspection camera 12 may be provided in the cutting module A1.

[0029] The inspection table 11 holds the semiconductor component S1 for optical inspection of the semiconductor component S1. The inspection table 11 is movable along the X-axis in the figure. Also, the inspection table 11 can be turned upside down. The inspection table 11 is provided with a holding member that holds the semiconductor component S1 by adsorbing the semiconductor component S1. Also, in the inspection table 11, the surface that holds the semiconductor component S1 is, in this example, composed of a dark-colored rubber such as black. Note that the color of the rubber does not necessarily have to be dark and may be a bright color such as white, for example.

[0030] The first optical inspection camera 12 and the second optical inspection camera 13 image the mold surface and the ball / lead surface of the semiconductor component S1, respectively. Various inspections of the semiconductor component S1 are performed based on the images (image data) generated by the first optical inspection camera 12 and the second optical inspection camera 13. Each of the first optical inspection camera 12 and the second optical inspection camera 13 is arranged to image upward in the vicinity of the inspection table 11. In this example, the images generated by each of the first optical inspection camera 12 and the second optical inspection camera 13 are grayscale (256 gradations) images, but are not limited thereto, and may be, for example, color images. After the package substrate P1 is cut by the spindle unit 6, until the plurality of semiconductor components S1 that have been singulated are imaged by the first optical inspection camera 12 and the second optical inspection camera 13 and then arranged in the arrangement unit 14 as described later, they maintain the arrangement on the package substrate P1 before cutting. That is, during this period, the plurality of singulated semiconductor components S1 maintain a state of being aligned vertically and horizontally. Therefore, the images captured by the first optical inspection camera 12 and the second optical inspection camera 13 capture the semiconductor components S1 in a vertically and horizontally aligned state.

[0031] The first optical inspection camera 12 images the mold surface of the semiconductor component S1 conveyed to the inspection table 11 by the conveyance unit 7. Thereafter, the conveyance unit 7 places the semiconductor component S1 on the holding member of the inspection table 11. After adsorbing the semiconductor component S1, the inspection table 11 turns upside down. The inspection table 11 moves above the second optical inspection camera 13, and the ball / lead surface of the semiconductor component S1 is imaged by the second optical inspection camera 13.

[0032] Above the first optical inspection camera 12, an illumination unit 16 is provided, and above the second optical inspection camera 13, an illumination unit 17 is provided. Each of the illumination units 16 and 17 is composed of, for example, so-called coaxial illumination and / or dome-shaped illumination. The illumination unit 16 is configured to irradiate the semiconductor component S1 on the transport unit 7 with light during the inspection by the first optical inspection camera 12. The illumination unit 17 is configured to irradiate the semiconductor component S1 on the inspection table 11 with light during the inspection by the second optical inspection camera 13. Since the set of the first optical inspection camera 12 and the illumination unit 16 and the set of the second optical inspection camera 13 and the illumination unit 17 have, for example, the same configuration, the configuration of the latter set will be typically described below.

[0033] FIG. 2 is a side cross-sectional view schematically showing the imaging environment by the second optical inspection camera 13. As shown in FIG. 2, in the inspection by the second optical inspection camera 13, the light emitted by the illumination unit 17 is irradiated onto the semiconductor component S1. In this example, the illumination unit 17 is composed of dome-shaped illumination and includes a dome 17a and a plurality of LEDs 17b arranged on the inner surface of the dome 17a. With the semiconductor component S1 irradiated with light, an image of the semiconductor component S1 is generated by the second optical inspection camera 13. Based on this image, the inspection of the semiconductor component S1 is performed.

[0034] Referring to FIG. 1 again, the inspected semiconductor component S1 is arranged in the arrangement unit 14. The arrangement unit 14 is movable along the Y-axis in the figure. The inspection table 11 arranges the inspected semiconductor component S1 in the arrangement unit 14.

[0035] The extraction unit 15 transfers the semiconductor component S1 arranged in the placement unit 14 to a tray. The semiconductor component S1 is classified into "good product" or "defective product" based on the results of inspections using the first optical inspection camera 12 and the second optical inspection camera 13. The extraction unit 15 transfers each semiconductor component S1 to a good-product tray 15a or a defective-product tray 15b based on the classification results. That is, good products are stored in the good-product tray 15a, and defective products are stored in the defective-product tray 15b. Each of the good-product tray 15a and the defective-product tray 15b is replaced with a new tray when filled with the semiconductor components S1.

[0036] The cutting device 1 further includes a computer 50 and a monitor 20. The monitor 20 is configured to display images. The monitor 20 is composed of a display device such as, for example, a liquid crystal monitor or an organic EL (Electro Luminescence) monitor. Note that the computer 50 and the monitor 20 are provided in the inspection and storage module B1 in the example of FIG. 1, but may be provided in the cutting module A1.

[0037] The computer 50 controls the operations of each part of, for example, the cutting module A1 and the inspection and storage module B1. By the computer 50, for example, the operations of the substrate supply unit 3, the positioning unit 4, the cutting table 5, the spindle unit 6, the transfer unit 7, the inspection table 11, the first position confirmation camera 5d, the second position confirmation camera 6b, the first optical inspection camera 12, the second optical inspection camera 13, the lighting units 16, 17, the placement unit 14, the extraction unit 15, and the monitor 20 are controlled.

[0038] Also, the computer 50 performs various inspections of the semiconductor component S1 based on, for example, the image data generated by the first optical inspection camera 12 and the second optical inspection camera 13. Next, the computer 50 will be described in detail.

[0039] <1-2. Hardware Configuration of Computer> FIG. 3 is a diagram schematically showing the hardware configuration of the computer 50. As shown in FIG. 3, the computer 50 includes a control unit 70, an input / output I / F (interface) 90, a reception unit 95, and a storage unit 80, and each component is electrically connected via a bus.

[0040] The control unit 70 includes a CPU (Central Processing Unit) 72, a RAM (Random Access Memory) 74, a ROM (Read Only Memory) 76, etc. The control unit 70 is configured to control each component other than the computer 50 in the cutting device 1 by controlling each component in the computer 50 according to information processing.

[0041] The input / output I / F 90 is configured to communicate with each component included in the cutting device 1 via signal lines. The input / output I / F 90 is used for transmitting data from the computer 50 to each component in the cutting device 1 and receiving data transmitted from each component in the cutting device 1 to the computer 50. The reception unit 95 is configured to receive an instruction from the user. The reception unit 95 is composed of, for example, a part or all of a touch panel, a keyboard, a mouse, and a microphone.

[0042] The storage unit 80 is, for example, an auxiliary storage device such as a hard disk drive or a solid state drive. The storage unit 80 is configured to store, for example, a control program 81. When the control program 81 is executed by the control unit 70, various operations in the cutting device 1 are realized. When the control unit 70 executes the control program 81, the control program 81 is expanded in the RAM 74. Then, the control unit 70 controls each component by interpreting and executing the control program 81 expanded in the RAM 74 by the CPU 72.

[0043] [2. Method for manufacturing semiconductor components] A method for manufacturing a semiconductor component S1 using the above-described cutting device 1 will be described. First, a package substrate P1 is prepared and housed in a magazine M1 included in a cutting module A1 of the cutting device 1. In this example, the package substrate P1 has various elements such as semiconductor elements arranged in a certain repeating pattern on a single substrate. Thereby, one package substrate P1 forms a structure in which a plurality of same-type semiconductor components S1 are connected in a state where they are arranged vertically and horizontally. Before being housed in the magazine M1, a bad mark is attached to each semiconductor component S1 included in one package substrate P1 as necessary. The bad mark is a mark attached to the semiconductor component S1 when it is determined that there is some defect (it is a defective product) in the semiconductor component S1 in a process upstream of the cutting device 1 in the manufacturing line. The bad mark is attached in a manner that can be visually confirmed from the appearance, for example, by methods such as laser cutting, printing, or digging on the surface of the semiconductor component S1.

[0044] The package substrate P1 supplied to the magazine M1 is conveyed to the spindle unit 6 by the method as described above and is cut by the spindle unit 6. Here, the package substrate P1 is cut vertically and horizontally along the boundary lines of the plurality of semiconductor components S1 included therein. As a result, a plurality of separated semiconductor components S1 are obtained. The plurality of separated semiconductor components S1 are conveyed to an inspection and storage module B1 while maintaining the positional relationship before cutting, and various inspections are performed. The various inspections here include an appearance inspection based on images generated by a first optical inspection camera 12 and a second optical inspection camera 13. The appearance inspection based on the image generated by the second optical inspection camera 13 includes a bad mark inspection for inspecting whether a bad mark is included in each semiconductor component S1 shown in the image. These inspections are executed by a control unit 70 of a computer 50.

[0045] The control unit 70 classifies each semiconductor component S1 as a good product or a defective product through various inspections including the bad mark inspection. The control unit 70 controls the operation of the extraction unit 15 to convey the semiconductor components S1 classified as good products to the good product tray 15a and the semiconductor components S1 classified as defective products to the defective product tray 15b. As a result, each semiconductor component S1 is sorted into the good product tray 15a or the defective product tray 15b. In this process, the semiconductor components S1 determined to include bad marks through the bad mark inspection are classified as defective products and sorted into the defective product tray 15b. On the other hand, the semiconductor components S1 determined not to include bad marks are sorted into the good product tray 15a unless they are determined to be defective products in other inspections. As described above, a plurality of semiconductor components S1 separated from each other and distinguished as good products or defective products are obtained from the package substrate P1. In this way, the semiconductor components S1 are manufactured by the cutting device 1.

[0046] [3. Bad Mark Inspection] Next, the details of the bad mark inspection will be described. Hereinafter, the preparation process performed prior to the bad mark inspection and the flow of the bad mark inspection performed after the preparation process will be described in order. The preparation process is usually performed when the package substrate P1 to be cut by the cutting device 1 is a variety that is cut for the first time. The information of the package substrate P1 of the variety for which the preparation process has been performed once is stored in the storage unit 80 and can be called from the storage unit 80 and used when cutting the package substrate P1 of that variety next.

[0047] <3-1. Flow of the Preparation Process> Before starting the manufacturing process of the semiconductor component S1 described above, the preparation process is performed. In the preparation process, various parameters for operating the cutting device 1 are set. As described above, the manufacturing process of the semiconductor component S1 includes a bad mark inspection. In the preparation process, various parameters used in processes other than the bad mark inspection are set, but various parameters for the bad mark inspection are also set. Hereinafter, the method for setting the parameters for the bad mark inspection will be described.

[0048] Fig. 4 shows an example of an image IM1 of the semiconductor component S1 captured by the second optical inspection camera 13. In this example, the image IM1 is an image of the ball / lead surface side of the semiconductor component S1. The image IM1 shows a plurality of semiconductor components S1. In this example, the entire four semiconductor components S1 arranged in a 2×2 matrix are shown. The region corresponding to each semiconductor component S1 included in the image IM1 is called a component region. The image IM1 shows four component regions T1 to T4. The image IM1 also shows a plurality of cutting lines formed when the package substrate P1 is separated into individual semiconductor components S1. On the image IM1, the cutting lines are represented as an image of the surface that holds the semiconductor component S1 on the inspection table 11. The component regions T1 to T4 are adjacent to each other with such cutting lines as the boundary line BL.

[0049] In the example of Fig. 4, among the four semiconductor components S1 corresponding to the component regions T1 to T4 respectively, only one semiconductor component S1 corresponding to the component region T3 contains a bad mark BM. In the image IM1, the region where the bad mark BM appears when the semiconductor component S1 contains the bad mark BM is called a bad mark region ROI (Region of Interest). The bad mark region ROI within the component region T3 contains an image of the bad mark BM, but the bad mark regions ROI within the component regions T1, T2, and T4 do not contain an image of the bad mark BM.

[0050] In order to accurately perform the bad mark inspection, it is desirable to set the bad mark region ROI as accurately as possible within the field of view of the image IM1 that captures the semiconductor component S1. However, since the position, shape, etc. of the bad mark BM attached to the product vary depending on the product, the position of the bad mark region ROI within the image IM1 often does not have a fixed value uniformly. Also, due to even a slight deviation in the attachment position, angle, etc. of the second optical inspection camera 13, the position of the bad mark region ROI within the image IM1 will change slightly. Therefore, conventionally, the bad mark region ROI has been set manually, but there has been a problem of large variations in the settings by the operator. Also, regarding the threshold value used to determine whether the bad mark BM is included in the bad mark region ROI, conventionally, it has been set manually, but there has been the same problem of large variations in the settings by the operator. When attempting to manually set the bad mark region ROI so as to surround the bad mark BM, the judgment as to whether it is properly surrounded depends on the individual's subjectivity. Similarly, when adjusting the threshold value, the individual's subjectivity also comes in. For example, some people may set the bad mark region ROI too wide, and the image of the bad mark BM in the bad mark region ROI will become relatively small. Then, the average luminance within the bad mark region ROI changes, and the bad mark BM may not be detectable with the set threshold value. If the settings of the bad mark region ROI and the threshold value are not appropriate as in this example, the accuracy of the bad mark inspection will decrease. Also, when attempting to manually set the bad mark region ROI and the threshold value, there is also a problem that it takes a long time.

[0051] Based on the above problems, in this embodiment, the bad mark region ROI and the threshold value are automatically set. Fig. 5 shows the flow of the method for setting the bad mark region ROI and the threshold value (the third threshold Th3 described later), which are parameters for the bad mark inspection. The process shown in Fig. 5 is executed by the control unit 70. Hereinafter, the process shown in Fig. 5 will be described in detail.

[0052] First, in step S100, the control unit 70 cuts the package substrate P1 with the spindle unit 6 in the same manner as during the actual production of the semiconductor component S1, and then causes the second optical inspection camera 13 to image a plurality of singulated semiconductor components S1. In this example, in one image IM1 imaged by the second optical inspection camera 13, only a part of the plurality of semiconductor components S1 included in one package substrate P1 is captured according to the angle of view of the second optical inspection camera 13. The control unit 70 performs multiple shootings on the arrangement of the plurality of semiconductor components S1 derived from one package substrate P1 to obtain a plurality of images IM1. The image of each semiconductor component S1 derived from one package substrate P1 is captured in at least one of these plurality of images IM1.

[0053] In the subsequent step S101, the control unit 70 obtains a setting image from among the plurality of images IM1 obtained in step S100. The setting image may be a plurality of images, but for simplicity of explanation here, it is assumed that one setting image is set. Specifically, the control unit 70 sequentially displays the plurality of images IM1 on the monitor 20 according to the operation of the operator on the reception unit 95. The operator operates the reception unit 95 while checking the monitor 20 to select one image IM1 from among the plurality of images IM1. The condition of the image IM1 selected here (hereinafter, the selection condition) is that at least one semiconductor component S1 without a bad mark BM (good product) and at least one semiconductor component S1 with a bad mark BM (defective product) are captured. The control unit 70 obtains the image IM1 that satisfies the selection condition selected by the operator as the setting image. Hereinafter, the symbol IM1 is also attached to the setting image.

[0054] In the subsequent step S102, the control unit 70 extracts a plurality of component regions T1 to T4 from the setting image IM1. Note that, according to the above selection conditions, at least one of the component regions T1 to T4 extracted here is a good product region in which good products are imaged, and at least one other is a defective product region in which defective products are imaged. In the description here, it is assumed that the image in FIG. 4 is selected as the setting image IM1. In the example of FIG. 4, T1, T2, and T4 indicate good product regions, and T3 indicates a defective product region. The component regions T1 to T4 can be detected by any method through image processing. For example, the control unit 70 can detect the boundary line BL and cut out the component regions T1 to T4 along the boundary line BL.

[0055] In the subsequent step S103, the control unit 70 divides each of the plurality of component regions T1 to T4, which includes at least one good product region and at least one defective product region, into n divided regions D1 to Dn (n is an integer of 2 or more). FIG. 6 shows the divided regions D1 to Dn set within the component region T1. Note that within the other component regions T2 to T4, the divided regions D1 to Dn are also set in the same manner. In this example, the divided regions D1 to Dn are set in a matrix form (10×10 in FIG. 6). Also, in this example, the divided regions D1 to Dn are evenly set within the component region without gaps and without overlap. However, the divided regions D1 to Dn may be set with gaps between each other, may overlap each other, or may be set unevenly.

[0056] In the subsequent step S104, the control unit 70 calculates the luminance of each divided region D1 to Dn in each component region T1 to T4. Each divided region D1 to Dn contains a plurality of pixels. Therefore, the luminance of the divided region is a representative value representing the luminance of the plurality of pixels included in the divided region. In this example, as the representative value, the average luminance of the plurality of pixels is set. However, the representative value can also be, for example, the median value and the mode value of the luminance of the plurality of pixels.

[0057] In the subsequent step S105, the control unit 70 compares the luminance among a plurality of component regions T1 to T4 including at least one non-defective region and at least one defective region. In this example, the comparison of luminance means calculating the difference in luminance (luminance difference). Also, in this example, one component region serving as a reference is selected from among the plurality of component regions T1 to T4, and the luminance is compared in a pairwise manner between the selected component region and the remaining three component regions. One component region serving as a reference may be automatically selected by an arbitrary method such as selection based on the luminance of each component region or random selection, or may be determined in advance. In this example, component region T1 is selected as one component region serving as a reference. Therefore, the luminance is compared for the three combinations of component regions (T1, T2), (T1, T3), and (T1, T4). Alternatively, without selecting one component region serving as a reference, the luminance may be compared for all combinations of the plurality of component regions T1 to T4. According to the above method, the luminance of at least one set of the non-defective region and the defective region will surely be compared.

[0058] In this example, the luminance is compared for each of the divided regions D1 to Dn among the component regions T1 to T4. Specifically, the difference (luminance difference) between the luminance of the divided region D1 of one of the two component regions to be compared and the luminance of the divided region D1 of the other component region is calculated. The same process is repeated for the divided regions D2 to Dn. Thereby, for all of the divided regions D1 to Dn, the difference (luminance difference) between the luminance of the divided region of one component region and the luminance of the corresponding divided region in the other component region is calculated. According to the above method, the luminance is compared between the non-defective region and the defective region for each of the divided regions D1 to Dn. FIG. 7A shows the comparison result of the luminance between the non-defective region T1 and the defective region T3. In FIG. 7A, the numerical values within each of the divided regions D1 to Dn constituting the component region indicate the luminance difference calculated for that divided region.

[0059] In the subsequent step S106, the control unit 70 selects a divided region where the luminance difference (absolute value) between the two component regions compared in step S105 is equal to or greater than the first threshold value Th1. In this example, similar to step S105, for the three combinations of component regions (T1, T2), (T1, T3), and (T1, T4), similar processing is repeated. As a result, for at least one combination of a non-defective product region and a defective product region, a divided region with a luminance difference equal to or greater than the first threshold value Th1 is surely selected. In FIG. 7A, the divided region painted dark gray is a divided region where the luminance difference between the non-defective product region T1 and the defective product region T3 is equal to or greater than the first threshold value Th1. Although the numerical values of the luminance differences are omitted, FIG. 7B shows the comparison result of the luminance between the non-defective product region T1 and the non-defective product region T2, and FIG. 7C shows the comparison result of the luminance between the non-defective product region T1 and the non-defective product region T4. Also in FIGS. 7B and 7C, the divided regions painted dark gray are, as in FIG. 7A, divided regions where the luminance difference between the two component regions is equal to or greater than the first threshold value Th1.

[0060] The first threshold value Th1 can be set as appropriate. For example, the first threshold value Th1 may be a fixed value or may be automatically set. In the case of automatic setting, for example, the first threshold value Th1 can be calculated based on the luminance of the two target component regions. In this example, the first threshold value Th1 is automatically set to (the maximum value of the luminance difference) / 2.

[0061] In the subsequent step S107, in addition to the divided region selected in step S106, the control unit 70 further selects a divided region where the luminance difference between the component regions is equal to or greater than the second threshold value Th2 among the divided regions adjacent to the divided region selected in step S106. In this example, similar to steps S105 and S106, for the three combinations of component regions (T1, T2), (T1, T3), and (T1, T4), similar processing is repeated. In FIGS. 7A to 7C, the divided regions painted light gray are the divided regions selected in step S107.

[0062] The second threshold Th2 can also be set as appropriate. In this example, the second threshold Th2 is a fixed value. However, the second threshold Th2 may be automatically set. In the case of automatic setting, for example, the second threshold Th2 can be calculated based on the luminance of the two target component regions, or can also be calculated based on the first threshold Th1. The second threshold Th2 is preferably smaller than the first threshold Th1. Therefore, for example, the second threshold Th2 can be set to a value obtained by multiplying the first threshold Th1 by a coefficient greater than 0 and less than 1. When the second threshold Th2 is a fixed value and the first threshold Th1 is automatically set, it is preferable to predict the possible values of the first threshold Th1 and set in advance the second threshold Th2 to be smaller than these values.

[0063] Here, looking back at step S106 while referring to FIG. 7A, the divided region where the luminance difference (absolute value) between the good product region T1 and the defective product region T3 becomes equal to or greater than the first threshold Th1 (that is, becomes large) is considered to be mainly the region where the bad mark BM exists. Around the divided region selected in step S106, that is, the region where there is a high possibility that the bad mark BM exists, it is also considered that there is a high possibility that the bad mark BM exists. Therefore, for the purpose of detecting without missing the divided regions where there is a high possibility that the bad mark BM exists although they could not be detected in step S106, the above step S107 is executed. Setting the second threshold Th2 to a value smaller than the first threshold Th1 means increasing the detection sensitivity at the time of selection in step S107 compared to the time of selection in step S106, in line with this purpose. The region selected in step S107 is also a region where the luminance difference relatively becomes large, and is considered to be mainly the region where the bad mark BM exists.

[0064] In the subsequent step S108, the control unit 70 determines the bad mark region ROI so as to include the divided regions selected in steps S106 and S107. In this example, first, for the three combinations of (T1, T2), (T1, T3), and (T1, T4), one or more regions (hereinafter, combined regions) C formed by the connection of the selected divided regions are detected. Then, among the one or more detected combined regions C, the maximum combined region Cmax, which is the combined region C with the largest area, is detected, and the bad mark region ROI is determined so as to include the maximum combined region Cmax. In the examples of FIGS. 7A to 7C, a total of 10 combined regions C are detected. And among them, the region with the largest area is detected as the maximum combined region Cmax. The maximum combined region Cmax is considered to be the region where the bad mark BM exists. Therefore, the maximum combined region Cmax is detected from the comparison result (FIG. 7A) between the non-defective region T1 that does not include the bad mark BM and the defective region T3 that includes the bad mark BM. The combined regions C other than the maximum combined region Cmax are detected due to errors.

[0065] When detecting the combined region C, "connected" of the divided regions may mean, for example, being connected vertically, horizontally, or diagonally in all directions. FIGS. 7A to 7C are examples of the case of being connected diagonally in all directions.

[0066] In this example, as shown in FIG. 7A, the bad mark region ROI is determined as the smallest rectangular region including the maximum combined region Cmax. However, not limited to this example, the bad mark region ROI may be, for example, the maximum combined region Cmax itself or a region slightly smaller that surrounds the maximum combined region Cmax. In this example, the information specifying the relative position of the bad mark region ROI within the component region is stored in the storage unit 80 as the information specifying the position of the bad mark region ROI.

[0067] Through the above steps S100 to S108, the bad mark region ROI is preset prior to the bad mark inspection. The subsequent steps S109 to S111 are processes for presetting the third threshold Th3. The third threshold Th3 is a parameter used for inspecting the bad mark region ROI in the inspection image. The inspection image is an image to be inspected for bad marks and is captured by the second optical inspection camera 13 under the same conditions as the setting image IM1. In this example, the third threshold Th3 is calculated based on the luminance of the bad mark region ROI in the setting image IM1.

[0068] In step S109, the control unit 70 selects one pair of a good product region and a defective product region from among the plurality of component regions T1 to T4. Although not limited to this, this selection is made, for example, by selecting two component regions T1 and T3 that form the maximum connected region Cmax.

[0069] In the subsequent step S110, the control unit 70 identifies an appropriate parameter L as the third threshold Th3 while varying the parameter L. The variation range of the parameter L is, in this example, the maximum range of luminance that a pixel can take (0 to 255). However, the variation range of the parameter L is not limited to this. For example, the variation range of the parameter L may be limited to the vicinity of the predicted value of an appropriate value as the third threshold Th3, for example, a range narrower than the maximum range, such as 30 to 230. Note that the increment amount of the variation of the parameter L may be 1 or a value of 2 or more.

[0070] Specifically, while varying the parameter L within the variation range, the control unit 70 calculates the area of the portion where the luminance exceeds the parameter L within the bad mark region ROI included in one of the component regions (good product region) selected in step S109. Similarly, while varying the parameter L within the variation range, the control unit 70 calculates the area of the portion where the luminance exceeds the parameter L within the bad mark region ROI included in the other component region (defective product region) selected in step S109. The area can be counted, for example, as the number of pixels. Further, while varying the parameter L within the variation range, the control unit 70 calculates the difference between the above two areas (hereinafter referred to as the area difference). FIG. 8 is a table showing the above calculation results. FIG. 9 is a graph showing the relationship between the parameter L (horizontal axis) shown in FIG. 8 and the area difference (vertical axis).

[0071] It can be said that the third threshold Th3 is a threshold for separating the bad mark BM and the background region. Here, referring to FIG. 4, in this example, within the bad mark region ROI, mainly, there are a bright portion representing the bad mark BM (hereinafter referred to as the bad mark portion), a dark portion representing the substrate (hereinafter referred to as the substrate portion), and a portion representing a ball brighter than the bad mark BM (hereinafter referred to as the ball portion). In the image IM1 of FIG. 4, the ball portion corresponds to a white dot pattern. Next, referring to FIG. 9, while the parameter L varies from 0 to a certain value V1 (V1>0), usually the luminance of all pixels falls within the range of L to 255, so the area difference is substantially 0. However, when the parameter L exceeds the value V1, the luminance of the pixels in the substrate portion begins to deviate from the range of L to 255, so the graph of the area difference rises steeply. This is because due to the presence of the bad mark BM, the substrate portion is hidden in the defective product region (that is, the conventional substrate portion becomes invisible due to the bad mark BM), but the substrate portion is not hidden in the good product region (that is, the conventional substrate portion is visible). That is, when the parameter L exceeds the value V1, the presence of the bad mark BM begins to appear as the area difference.

[0072] When the parameter L exceeds the peak value V2 (V2 > V1), the graph of the area difference drops sharply. Furthermore, when the parameter L exceeds the value V3 (V3 > V2), the graph of the area difference becomes gentle or approximately constant. This is because the number of pixels in the substrate portion hidden by the bad mark BM reaches its peak. It can be said that the peak value V2 is close to the average luminance of the substrate portion. Thereafter, when the parameter L exceeds the value V4 (V4 > V3), the graph of the area difference begins to drop further. It can be said that V4 is close to the average luminance of the bad mark BM. Therefore, when the parameter L exceeds the value V4, the luminance of the pixels in the bad mark portion starts to deviate from the range of L to 255, so the graph of the area difference approaches 0. This is because the area of the ball portion is the same in the bad mark region ROI within the good product region and the bad mark region ROI within the defective product region.

[0073] In the subsequent step S111, the control unit 70 sets the third threshold Th3 based on the area difference calculated in step S110. Specifically, the control unit 70 identifies the parameter L (hereinafter referred to as the reference parameter Ls) that maximizes the area difference within the variation range (0 to 255) of the parameter L. Then, the luminance that is separated from this reference parameter Ls by a predetermined offset value F1 is set as the third threshold Th3 and stored in the storage unit 80. At this time, as a reference value, the value of the reference parameter Ls may also be stored in the storage unit 80. The offset value F1 may be a fixed value or may be automatically set. In the case of automatic setting, for example, the offset value F1 may be calculated based on the luminance of the pixels within the bad mark region ROI included in the two target good product regions and defective product regions.

[0074] In this example, the third threshold Th3 is set to a value that is larger than the reference parameter Ls by the offset value F1. This is to set the third threshold Th3 within the range of V3 to V4. The range of V3 to V4 is the portion where the number of pixels in the substrate portion hidden by the bad mark BM reaches its peak and is the position where the presence of the bad mark BM appears stably.

[0075] As described above, the bad mark region ROI and the third threshold Th3, which are two parameters used in the bad mark inspection, are set.

[0076] <3-2. Flow of Bad Mark Inspection> Next, the flow of the bad mark inspection will be described. The bad mark inspection is performed on the inspection image captured by the second optical inspection camera 13 during the mass production of the semiconductor component S1. The inspection image is of the same type as the image in the example of FIG. 4. Therefore, hereinafter, the inspection image will also be denoted by the reference numeral IM1.

[0077] The control unit 70 continuously acquires the inspection image IM1 and executes the following processing for each inspection image IM1. First, the control unit 70 extracts a plurality of component regions T1 to T4 from the inspection image IM1 in the same manner as in step S102. Then, referring to the storage unit 80, based on the information specifying the position of the bad mark region ROI stored in step S108, the bad mark region ROI is set within each component region. Subsequently, referring to the storage unit 80, the third threshold Th3 is read out. Then, for each bad mark region ROI, it is determined whether the number of pixels exceeding the third threshold Th3 included in the bad mark region ROI is equal to or greater than the fourth threshold Th4. If it is determined that such a number of pixels is equal to or greater than the fourth threshold Th4, it is determined that the bad mark BM is included in the bad mark region ROI, and the semiconductor component S1 corresponding to the component region including the bad mark region ROI is determined to be a defective product. Otherwise, it is determined that the bad mark BM is not included in the bad mark region ROI, and the semiconductor component S1 corresponding to the component region including the bad mark region ROI is determined to be a non-defective product.

[0078] Thus, the bad mark inspection is completed. Note that the fourth threshold Th4 may be a fixed value, or may be set manually or automatically prior to the bad mark inspection. In the case of automatic setting prior to the bad mark inspection, for example, the fourth threshold Th4 may be calculated based on the luminance of the pixels within the bad mark region ROI included in two target non-defective regions and defective regions.

[0079] [4. Features] As described above, in the cutting device 1 according to the present embodiment, the bad mark region ROI is automatically set in advance. Therefore, variations in the settings by the operator are eliminated, and the accuracy of the bad mark inspection is improved. In addition, the setting time required for preparing the bad mark inspection can be shortened.

[0080] Also, the third threshold Th3 is automatically set in advance. Therefore, variations in the settings by the operator are also eliminated for the third threshold Th3, and the accuracy of the bad mark inspection is further improved. In addition, the setting time required for preparing the bad mark inspection can be further shortened.

[0081] [5. Modification Example] The above embodiment is merely an exemplification of the present invention in every aspect. Various improvements and modifications are possible within the scope of the present invention. For example, the following modifications are possible. In implementing the present invention, a specific configuration can be appropriately adopted according to the embodiment.

[0082] <5-1> In the above embodiment, step S107 may be omitted.

[0083] <5-2> In the above embodiment, an example is shown in which mainly a bad mark portion, a substrate portion, and a ball portion exist within the bad mark region ROI. Also, in the order of brightness, the ball portion, the bad mark portion, and the substrate portion are arranged. However, even if the bad mark portion is the darkest region, since the bad mark portion and the substrate portion can be separated near the peak value V2, the third threshold Th3 can be calculated by the same algorithm. Thus, the above-described algorithm for calculating the third threshold Th3 is applicable to various types of semiconductor components S1.

[0084] <5-3> In the above embodiment, the bad mark region ROI and the third threshold Th3 were automatically set in advance. However, among the bad mark region ROI and the third threshold Th3, only the bad mark region ROI may be automatically set, or only the third threshold Th3 may be automatically set.

[0085] <5-4> In the above embodiment, in step S100 of the preparation process, the same package substrate P1 as that used in the actual production of the semiconductor component S1 was used, but a dummy substrate of this package substrate P1 may also be used.

[0086] The embodiments of the present invention have been exemplarily described above. That is, for exemplary explanation, a detailed description and the accompanying drawings have been disclosed. Therefore, among the components described in the detailed description and the accompanying drawings, there may be components that are not essential for solving the problem. Therefore, just because those non-essential components are described in the detailed description and the accompanying drawings, they should not be immediately recognized as essential.

Description of Reference Numerals

[0087] 1 Cutting device, 3 Substrate supply unit, 4 Positioning unit, 4a Rail unit, 5 Cutting table, 5a Holding member, 5b Rotation mechanism, 5c Moving mechanism, 5d First position confirmation camera, 5e First cleaner, 6 Spindle unit, 6a Blade, 6b Second position confirmation camera, 6c Rotation axis, 7 Conveying unit, 7a Second cleaner, 11 Inspection table, 12 First optical inspection camera, 13 Second optical inspection camera, 14 Arrangement unit, 15 Extraction unit, 15a Tray for good products, 15b Tray for defective products, 16, 17 Lighting unit, 17a Dome, 17b LED, 20 Monitor, 50 Computer, 70 Control unit, 72 CPU, 74 RAM, 76 ROM, 80 Storage unit, 81 Control program, 90 Input / output I / F, 95 Reception unit, A1 Cutting module, B1 Inspection and storage module, BL Boundary line, BM Bad mark, C Bonding area, Cmax Maximum bonding area, D1 Division area, D1~Dn Division areas, F1 Offset value, IM1 Image (setting image, inspection image), L Parameter, Ls Reference parameter, M1 Magazine, P1 Package substrate, ROI Bad mark area, S1 Semiconductor component, T1~T4 Component areas, T1, T2, T4 Good product areas, T3 Defective product area, Th1 First threshold, Th2 Second threshold, Th3 Third threshold, Th4 Fourth threshold, V1~V4 Values, V2 Peak value.

Claims

1. In a setting image in which an object to be inspected appears, when the object to be inspected includes a bad mark, a bad mark area that is an area where the bad mark appears is preset, and by inspecting the bad mark area in the inspection image, a control unit that inspects whether the object to be inspected appearing in the inspection image includes the bad mark is provided, Presetting the bad mark area includes acquiring the setting image in which a good product that is the object to be inspected without the bad mark and a defective product that is the object to be inspected with the bad mark appear, and determining the bad mark area by comparing the luminance of the good product area where the good product appears in the setting image with the luminance of the defective product area where the defective product appears in the setting image An inspection apparatus including this.

2. The control unit divides each of the good product area and the defective product area into a plurality of divided areas, and for each divided area, determines the bad mark area by comparing the luminance of the good product area with the luminance of the defective product area, The inspection apparatus according to Claim 1.

3. The control unit selects the divided areas where the luminance difference between the good product area and the defective product area is equal to or greater than a first threshold value, and determines the bad mark area so as to include the selected divided areas, The inspection apparatus according to Claim 2.

4. In addition to the divided areas where the luminance difference is equal to or greater than the first threshold value, the control unit further selects, among the divided areas adjacent to the divided areas where the luminance difference is equal to or greater than the first threshold value, the divided areas where the luminance difference is equal to or greater than a second threshold value, and determines the bad mark area so as to include the selected divided areas, The inspection apparatus according to Claim 3.

5. The control unit determines the bad mark area so as to include the area with the largest area among one or more areas formed by connecting the selected divided areas, The inspection apparatus according to Claim 3 or 4.

6. The control unit presets a third threshold value used for inspecting the bad mark area in the inspection image based on the luminance of the bad mark area in the setting image, The inspection apparatus according to any one of Claims 1 to 5.

7. Presetting the third threshold value includes While varying the third threshold value, calculate the difference between the area of the portion with luminance exceeding the third threshold value within the bad mark area included in the good product area and the area of the portion with luminance exceeding the third threshold value within the bad mark area included in the defective product area. Set the third threshold value in advance based on the difference. The inspection apparatus according to claim 6, comprising this.

8. The control unit sets, as the third threshold value, a luminance separated from the third threshold value that maximizes the difference within the variation range of the third threshold value by an offset value. The inspection apparatus according to claim 7.

9. A cutting mechanism for cutting a substrate including a plurality of semiconductor components and separating the semiconductor components into individual pieces, The inspection apparatus according to any one of claims 1 to 8, which inspects the separated semiconductor components as the inspection object A cutting apparatus comprising this.

10. A step of cutting a substrate including a plurality of semiconductor components by a cutting mechanism and separating the semiconductor components into individual pieces, A step of inspecting the separated semiconductor components as the inspection object using the inspection apparatus according to any one of claims 1 to 8 A method for manufacturing semiconductor components, comprising this.

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