Semiconductor device

Abstract

To provide a new display device.SOLUTION: A transistor includes a first gate electrode layer, a first insulating layer on the first gate electrode layer, an oxide semiconductor layer on the first insulating layer, a source electrode and a drain electrode on the oxide semiconductor layer, a second insulating layer on the source electrode, the drain electrode, and the oxide semiconductor layer, and a second gate electrode on the second insulating layer. A capacitive element includes a first electrode, a second electrode, and an insulating layer arranged on a same layer as the second insulating layer. The first electrode includes a conductive layer arranged on the same layer as the second gate electrode. The second electrode includes an oxide semiconductor layer arranged on the same layer as the oxide semiconductor layer. The capacitive element includes a third electrode which is electrically connected to first wiring arranged on the same layer as the first gate electrode via an insulating layer arranged on the same layer as the first insulating layer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a semiconductor device. One aspect of the present invention relates to a display device, a display module, and an electronic device.

Background Art

[0002] Techniques for constructing a transistor (also referred to as a field effect transistor (FET) or a thin film transistor (TFT)) using a semiconductor layer formed on a substrate having an insulating surface have attracted attention. The transistor is widely applied to electronic devices such as an integrated circuit (IC) and an image display device (display device). As a semiconductor layer applicable to a transistor, semiconductor materials typified by silicon are widely known, but techniques using oxide semiconductors as other materials have attracted attention. For example, as an oxide semiconductor, a technique for manufacturing a transistor using an amorphous oxide containing In, Zn, Ga, Sn, etc. is disclosed (see Patent Document 1). Further, a technique for manufacturing a transistor having an oxide semiconductor layer with a self-aligned top gate structure is disclosed (see Patent Document 2). Further, in order to increase the field effect mobility, a technique for manufacturing a transistor having a structure in which a channel is formed by the electric fields of upper and lower gate electrodes and an oxide semiconductor layer forming the channel is electrically surrounded is disclosed (see Patent Document 3).

[0003] In addition, an insulating layer that releases oxygen by heating is used for the underlying insulating layer of the oxide semiconductor layer that forms the channel, and by reducing the oxygen deficiency of the oxide semiconductor layer, a technique for manufacturing a transistor with high electrical reliability, such as a small shift in threshold voltage during long-term use, is disclosed (see Patent Document 4). Further, a technique for manufacturing a transistor having a structure in which a channel is formed by the electric fields of upper and lower gate electrodes and an oxide semiconductor layer forming the channel is electrically surrounded is disclosed (see Patent Document 3). In addition, an insulating layer that releases oxygen by heating is used for the underlying insulating layer of the oxide semiconductor layer that forms the channel, and by reducing the oxygen deficiency of the oxide semiconductor layer, a technique for manufacturing a transistor with high electrical reliability, such as a small shift in threshold voltage during long-term use, is disclosed (see Patent Document 4).

[0004] Also, an insulating layer that releases oxygen by heating is used for the underlying insulating layer of the oxide semiconductor layer that forms the channel, and by reducing the oxygen deficiency of the oxide semiconductor layer, a transistor with high electrical reliability, such as a small shift in threshold voltage during long-term use, is manufactured using a technique. The threshold voltage shift in long-term use is small, and the electrical reliability is improved. is disclosed (see Patent Document 4).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0006] Transistors having an oxide semiconductor layer are expected to be applied to display devices. The capacitive elements constituting the pixel circuits of display devices are required to have a large capacitance (hereinafter referred to as capacitance) in a small area. To avoid the problem that the influence of charge injection and feedthrough becomes large when the capacitance for holding the data voltage becomes small. To obtain a large capacitance in a small area, a capacitive element in which a thin gate insulating film is sandwiched between a gate electrode and a semiconductor layer to form a capacitance, a so-called MOS (Metal-Oxide-Semiconductor) capacitance (or a MIS (Metal-Isulator-Semiconductor) capacitance) is effective. However, the MOS capacitance has a small capacitance when holding a low voltage near 0 V, and it is difficult to hold a low-level data voltage.

[0007]

[0008] One aspect of the present invention is a novel configuration capable of obtaining a large capacity even with a small area. One of the problems is to provide a display device or the like having such a configuration. Or one aspect of the present invention is to provide a display device or the like having a novel configuration capable of obtaining a large capacity even when performing gradation display while maintaining a low voltage. One of the problems is to provide a display device or the like having such a configuration.

[0009] Note that the problems of one aspect of the present invention are not limited to the problems listed above. The problems listed above do not prevent the existence of other problems. Other problems are problems not mentioned in this item described below. Problems not mentioned in this item can be derived by those skilled in the art from the descriptions in the specification and drawings, etc., and can be appropriately extracted from these descriptions. That is, they do not prevent the existence of other problems. Other problems are problems not mentioned in this item described below. Problems not mentioned in this item can be derived by those skilled in the art from the descriptions in the specification and drawings, etc., and can be appropriately extracted from these descriptions. That is, they do not prevent the existence of other problems. Other problems are problems not mentioned in this item described below. Problems not mentioned in this item can be derived by those skilled in the art from the descriptions in the specification and drawings, etc., and can be appropriately extracted from these descriptions. That is, they do not prevent the existence of other problems. Other problems are problems not mentioned in this item described below. Problems not mentioned in this item can be derived by those skilled in the art from the descriptions in the specification and drawings, etc., and can be appropriately extracted from these descriptions. Note that one aspect of the present invention solves at least one of the problems listed above and / or other problems.

Means for Solving the Problems

[0010] One aspect of the present invention has a pixel having a first wiring, a first transistor, a first capacitor element, and a light-emitting element. The first wiring has a function of a current supply line for flowing a current to the light-emitting element. The first transistor has a first gate electrode, a first insulating layer on the first gate electrode, an oxide semiconductor layer on the first insulating layer, a source electrode and a drain electrode on the oxide semiconductor layer, a second insulating layer on the source electrode, the drain electrode, and the oxide semiconductor layer, and a second gate electrode on the second insulating layer. The first capacitor element has a first electrode, a second electrode, and an insulating layer provided in the same layer as the second insulating layer between the first electrode and the second electrode. The first electrode has a conductive layer provided in the same layer as the second gate electrode. The first wiring has a function of a current supply line for flowing a current to the light-emitting element. The first transistor has a first gate electrode, a first insulating layer on the first gate electrode, an oxide semiconductor layer on the first insulating layer, a source electrode and a drain electrode on the oxide semiconductor layer, a second insulating layer on the source electrode, the drain electrode, and the oxide semiconductor layer, and a second gate electrode on the second insulating layer. The first transistor has a first gate electrode, a first insulating layer on the first gate electrode, an oxide semiconductor layer on the first insulating layer, a source electrode and a drain electrode on the oxide semiconductor layer, a second insulating layer on the source electrode, the drain electrode, and the oxide semiconductor layer, and a second gate electrode on the second insulating layer. The first transistor has a first gate electrode, a first insulating layer on the first gate electrode, an oxide semiconductor layer on the first insulating layer, a source electrode and a drain electrode on the oxide semiconductor layer, a second insulating layer on the source electrode, the drain electrode, and the oxide semiconductor layer, and a second gate electrode on the second insulating layer. The first capacitor element has a first electrode, a second electrode, and an insulating layer provided in the same layer as the second insulating layer between the first electrode and the second electrode. The first capacitor element has a first electrode, a second electrode, and an insulating layer provided in the same layer as the second insulating layer between the first electrode and the second electrode. The first capacitor element has a first electrode, a second electrode, and an insulating layer provided in the same layer as the second insulating layer between the first electrode and the second electrode. ​​The electrode has an oxide semiconductor layer provided in the same layer as the oxide semiconductor layer, and the first capacitor element is electrically connected to the first wiring via an insulating layer provided in the same layer as the first insulating layer and has a third electrode layer. The third electrode layer is a display device provided in the same layer as the first gate electrode .

[0011] In one aspect of the present invention, a display device having oxygen, In, Zn, and M (where M is Al, Ga, Y, or Sn) in the second gate electrode and the first electrode is preferable.

[0012] In one aspect of the present invention, a display device in which the second gate electrode and the first electrode are made of an oxide semiconductor and have a higher carrier density than the second electrode is preferable.

[0013] In one aspect of the present invention, a display device in which the film thickness of the second insulating layer is larger than the film thickness of the first insulating layer is preferable.

[0014] In one aspect of the present invention, a pixel has a second transistor, a second capacitor element, and a liquid crystal element. The liquid crystal element has a reflective electrode provided with an opening, and a light-emitting region of the light-emitting element preferably has a region overlapping with the region provided with the opening.

[0015] For other aspects of the present invention, the description in the embodiments described below and the description in the drawings are provided.

Advantages of the Invention

[0016] One aspect of the present invention can provide a novel configuration of a display device or the like that can obtain a large capacitance even with a small area. Or one aspect of the present invention can provide a novel configuration of a display device or the like that can obtain a large capacitance even when performing gradation display while maintaining a low voltage. ​ can be provided.

Brief Description of the Drawings

[0017]

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Embodiments for Carrying Out the Invention

[0018] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and various changes can be made to its form and details without departing from the spirit and scope of the present invention. This will be readily understood by those skilled in the art. Therefore, the present invention should not be construed as being limited to the description of the

[0019] In the configuration of the invention described below, the same parts or parts having the same functions are commonly denoted by the same reference numerals in different drawings, and repeated descriptions thereof are omitted. Also, when referring to the same function, the hatching pattern may be the same, and there may be cases where no particular reference numeral is given.

[0020] In each of the drawings described in this specification, the size of each component, the thickness of each layer, or the area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0021] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0022] A transistor is a type of semiconductor device that controls the amplification of current or voltage and the conduction or non-conduction of electricity. In this specification, the transistor can realize a switching operation that controls the , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT: Thin Film Transistor ).

[0023] In addition, the functions of "source" and "drain" may differ when using transistors with different polarities. In some cases, such as when the direction of the current changes during circuit operation, the two may be interchanged. Therefore, in this specification, the terms "source" and "drain" may be used interchangeably. It is possible.

[0024] (Embodiment 1) In this embodiment, a structure example of a display device according to one embodiment of the present invention will be described.

[0025] [Example of circuit diagram] FIG. 1A is a circuit diagram of a pixel included in a display device.

[0026] The pixel PIX includes a transistor M1, a transistor M2, a transistor M3, and a capacitor The pixel PIX includes a scanning line GL, a signal line SL, a current The pixel PIX is connected to the supply line ANODE, the wiring V0, and the common wiring CATHODE. The transistors M1, M2 and M3 correspond to sub-pixels of a pixel that performs color display. The following description will be given for an n-channel transistor, but it may be a p-channel transistor. That's fine.

[0027] The scanning line GL is a wiring for supplying a scanning signal to a pixel. The scanning signal is a signal for controlling the conduction state of the supplied transistor. The signal line SL is a wiring for supplying a data voltage corresponding to image data to a pixel. The current supply line ANODE and the common wiring CATHODE are wirings for flowing a current through the light-emitting element EL. The wiring V0 is a wiring to which a constant voltage is applied. The signal line SL is a wiring for supplying a data voltage corresponding to image data to a pixel. The current supply line ANODE and the common wiring CATHODE are wirings for flowing a current through the light-emitting element EL. The wiring V0 is a wiring to which a constant voltage is applied. The current supply line ANODE and the common wiring CATHODE are wirings for flowing a current through the light-emitting element EL. The wiring V0 is a wiring to which a constant voltage is applied.

[0028] The capacitive element MC is a capacitive element composed of a transistor in which gate electrodes are provided above and below an oxide semiconductor layer. The gate electrode made of a metal material below the oxide semiconductor layer of the capacitive element MC is referred to as the first gate electrode (also called the bottom gate electrode). The gate electrode made of a metal oxide material above the oxide semiconductor layer is referred to as the second gate electrode (also called the top gate electrode). The metal oxide material is a material having a metal element and oxygen. The metal oxide material is a material having a metal element and oxygen. That's all.

[0029] The capacitive element MC is a so-called MOS capacitor composed of the second gate electrode, an insulating layer provided in contact with the second electrode, and an oxide semiconductor layer. The second gate electrode serving as one electrode of the capacitive element MC is connected to the gate electrode of the transistor M3. The second gate electrode serving as one electrode of the capacitive element MC is connected to the gate electrode of the transistor M3. The source electrode and the drain electrode serving as the other electrode of the capacitive element MC are connected to the source electrode of the transistor M3. The first gate electrode is connected to the current supply line ANODE, in other words, the other of the source or drain of the transistor M3. The first gate electrode is connected to the current supply line ANODE, in other words, the other of the source or drain of the transistor M3.

[0030] Note that the transistors M1, M2, and M3 are illustrated as single-gate transistors, but may also be transistors having a structure in which a gate electrode is provided above and below an oxide semiconductor layer, similar to the capacitive element MC. Configurable examples applicable to the capacitive element MC and the transistors M1, M2, and M3 will be described later. The gate electrode of the transistor M1 is connected to the scanning line GL. One of the source or drain of the transistor M1 is connected to the signal line SL. The other of the source or

[0031] drain of the transistor M1 is connected to the gate electrode of the transistor M3 and one of the electrodes of the capacitive element MC. The gate electrode of the transistor M2 is connected to the scanning line GL. One of the source or drain of the transistor M2 is connected to the wiring V0. The other of the source or drain of the transistor M2 is connected to one of the source or drain of the transistor M3, the other

[0032] electrode of the capacitive element MC, and one of the electrodes of the light-emitting element EL. The gate electrode of the transistor M3 is connected to the other of the source or drain of the transistor M1 and one of the electrodes of the capacitive element MC. One of the source or drain of the transistor M3 is connected to the other of the source or drain of the transistor M2, the other electrode of the capacitive element MC, and one of the electrodes of the light-emitting element EL. The other of the source or

[0033] drain of the transistor M3 is connected to the current supply line ANODE. One of the electrodes of the light-emitting element EL is connected to the other of the source or drain of the transistor M2, the other of the source or drain of the transistor M3, the other electrode of the capacitive element MC, and one of the electrodes of the light-emitting element EL. The other of the source or drain of the transistor M3 is connected to the current supply line ANODE. The other of the source or drain of the transistor M3 is connected to the current supply line ANODE.

[0034] One of the electrodes of the light-emitting element EL is connected to the other of the source or drain of the transistor M2, the One of the source or drain of transistor M3 and the other electrode of capacitor element MC are connected thereto. The other electrode of light-emitting element EL is connected to common wiring CATHODE.

[0035] FIG. 1(B) shows a timing chart for explaining the simple operation of FIG. 1(A). In FIG. 1(B), one scanning selection period (P SCAN ) in scanning line GL_m of the m-th row is illustrated. Also shown are the voltage V ANODE applied to current supply line ANODE and the voltage of wiring V0, and the image signal of signal line SL.

[0036] As shown in FIG. 1(B), during one scanning selection period, the image signal of signal line SL switches from the signal DATA_m-1 of the (m - 1)-th row to the signal DATA_m of the m-th row. During this period, the voltage V applied to current supply line ANODE is set to a voltage higher than the voltage of wiring V ANODE O in order to pass a current through light-emitting element EL.

[0037] In the configurations of FIGS. 1(A) and 1(B), the first gate electrode can be formed of a conductive layer made of a metal material, and the second gate electrode can be formed of a conductive layer made of a metal oxide material. The conductive layer made of a metal oxide material can supply oxygen to the insulating layer which is the surface to be coated during film formation. The insulating layer supplied with oxygen can release it to the semiconductor layer having an oxide semiconductor by heating. Therefore, by adopting the conductive layer made of a metal oxide material for the second gate electrode, the reliability of transistors M1, M2, and M3 can be enhanced.

[0038] In the configurations of FIGS. 1(A) and 1(B), as described above, the reliability of transistors M1, M2, and M3 By reducing the oxygen deficiency in the semiconductor layer having the property, i.e., the oxide semiconductor, the shift of the threshold voltage can be reduced. On the other hand, when the transistor functions as a MOS capacitor, if the threshold voltage of the transistor is near 0 V, the capacitance becomes small when a low voltage is maintained, and it becomes difficult to hold the low-level data voltage.

[0039] In FIG. 2(A), the voltages of the first gate electrode, the second gate electrode, and the electrodes functioning as the source and drain of the transistor shown in the circuit diagram are represented as "Vb", "Vg", and "Vs", respectively. FIG. 2(B) is a graph with the voltage "Vg-Vs" between the second gate electrode and the source electrode on the horizontal axis and the capacitance of the capacitive element MC, which is the MOS capacitance, on the vertical axis. As shown in FIG. 2(B), when the transistor with a threshold voltage near 0 V is used as a MOS capacitor, when the Vb applied to the first gate electrode and the Vb applied to the source electrode are at the same potential (Vb-Vs = 0), if a low voltage is applied to the second gate electrode, the capacitance to be held is small. As shown in FIG. 2(B), even when the transistor with a threshold voltage near 0 V is used as a MOS capacitor, if the Vb applied to the first gate electrode is made larger than the Vb applied to the source electrode (Vb-Vs>0), the threshold voltage of the transistor can be shifted negatively. Specifically, as shown in FIGS. 1(A) and 1(B), the voltage V applied to the current supply line ANODE, which is higher than the voltage of the wiring VO, is made to function as Vb applied to the first gate electrode. Therefore, even when a low voltage is applied to the second gate electrode, it is shown in the graph.

[0040] As shown in FIG. 2(B), when the transistor with a threshold voltage near 0 V is used as a MOS capacitor, when the Vb applied to the first gate electrode and the Vb applied to the source electrode are at the same potential (Vb-Vs = 0), if a low voltage is applied to the second gate electrode, the capacitance to be held is small. As shown in FIG. 2(B), even when the transistor with a threshold voltage near 0 V is used as a MOS capacitor, if the Vb applied to the first gate electrode is made larger than the Vb applied to the source electrode (Vb-Vs>0), the threshold voltage of the transistor can be shifted negatively. Specifically, as shown in FIGS. 1(A) and 1(B), the voltage V applied to the current supply line ANODE, which is higher than the voltage of the wiring VO, is made to function as Vb applied to the first gate electrode. Therefore, even when a low voltage is applied to the second gate electrode, it is small.

[0041] On the other hand, as shown in FIG. 2(B), even when the transistor with a threshold voltage near 0 V is used as a MOS capacitor, if the Vb applied to the first gate electrode is made larger than the Vb applied to the source electrode (Vb-Vs>0), the threshold voltage of the transistor can be shifted negatively. As shown in FIG. 2(B), even when the transistor with a threshold voltage near 0 V is used as a MOS capacitor, if the Vb applied to the first gate electrode is made larger than the Vb applied to the source electrode (Vb-Vs>0), the threshold voltage of the transistor can be shifted negatively. Specifically, as shown in FIGS. 1(A) and 1(B), the voltage V applied to the current supply line ANODE, which is higher than the voltage of the wiring VO, is made to function as Vb applied to the first gate electrode. Therefore, even when a low voltage is applied to the second gate electrode, it can be shifted negatively. Specifically, as shown in FIGS. 1(A) and 1(B), the voltage V applied to the current supply line ANODE, which is higher than the voltage of the wiring VO, is made to function as Vb applied to the first gate electrode. Therefore, even when a low voltage is applied to the second gate electrode, ANODE is applied to the first gate electrode. when a low voltage is applied to the second gate electrode, However, the capacitance to be held can be increased.

[0042] In addition, in the configurations of FIGS. 1(A) and 1(B), the insulating layer between the second gate electrode and the oxide semiconductor layer releases oxygen by heating to reduce the oxygen deficiency in the oxide semiconductor layer. Therefore, the thickness of the insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than that of the insulating layer between the first gate electrode and the oxide semiconductor layer. Therefore, the capacitor element MC can have a large capacitance with a small area. In addition, in the configurations of FIGS. 1(A) and 1(B), the insulating layer between the second gate electrode and the oxide semiconductor layer releases oxygen by heating to reduce the oxygen deficiency in the oxide semiconductor layer. Therefore, the thickness of the insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than that of the insulating layer between the first gate electrode and the oxide semiconductor layer. Therefore, the capacitor element MC can have a large capacitance with a small area. In addition, in the configurations of FIGS. 1(A) and 1(B), the insulating layer between the second gate electrode and the oxide semiconductor layer releases oxygen by heating to reduce the oxygen deficiency in the oxide semiconductor layer. Therefore, the thickness of the insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than that of the insulating layer between the first gate electrode and the oxide semiconductor layer. Therefore, the capacitor element MC can have a large capacitance with a small area. In addition, in the configurations of FIGS. 1(A) and 1(B), the insulating layer between the second gate electrode and the oxide semiconductor layer releases oxygen by heating to reduce the oxygen deficiency in the oxide semiconductor layer. Therefore, the thickness of the insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than that of the insulating layer between the first gate electrode and the oxide semiconductor layer. Therefore, the capacitor element MC can have a large capacitance with a small area.

[0043] In FIG. 1(A), the transistors M1, M2, and M3 have been described as having a single gate structure. However, as in the pixel PIX_A shown in FIG. 3(A), it may be configured to have a first gate electrode and a second gate electrode and connect the gate electrodes to each other. In the case of such a configuration, the transistors M1, M2, and M3, like the capacitor element MC, are transistors having a structure in which gate electrodes are provided above and below the oxide semiconductor layer. In FIG. 1(A), the transistors M1, M2, and M3 have been described as having a single gate structure. However, as in the pixel PIX_A shown in FIG. 3(A), it may be configured to have a first gate electrode and a second gate electrode and connect the gate electrodes to each other. In the case of such a configuration, the transistors M1, M2, and M3, like the capacitor element MC, are transistors having a structure in which gate electrodes are provided above and below the oxide semiconductor layer. In FIG. 1(A), the transistors M1, M2, and M3 have been described as having a single gate structure. However, as in the pixel PIX_A shown in FIG. 3(A), it may be configured to have a first gate electrode and a second gate electrode and connect the gate electrodes to each other. In the case of such a configuration, the transistors M1, M2, and M3, like the capacitor element MC, are transistors having a structure in which gate electrodes are provided above and below the oxide semiconductor layer. In FIG. 1(A), the transistors M1, M2, and M3 have been described as having a single gate structure. However, as in the pixel PIX_A shown in FIG. 3(A), it may be configured to have a first gate electrode and a second gate electrode and connect the gate electrodes to each other. In the case of such a configuration, the transistors M1, M2, and M3, like the capacitor element MC, are transistors having a structure in which gate electrodes are provided above and below the oxide semiconductor layer. In FIG. 1(A), the transistors M1, M2, and M3 have been described as having a single gate structure. However, as in the pixel PIX_A shown in FIG. 3(A), it may be configured to have a first gate electrode and a second gate electrode and connect the gate electrodes to each other. In the case of such a configuration, the transistors M1, M2, and M3, like the capacitor element MC, are transistors having a structure in which gate electrodes are provided above and below the oxide semiconductor layer.

[0044] In FIG. 1(A), the first gate electrode of the capacitor element MC is connected to the current supply line ANODE. However, any wiring that can apply a voltage capable of shifting the threshold voltage of the transistor negatively may be used for other configurations. For example, as in the pixel PIX_B shown in FIG. 3(B), the first gate electrode may be connected to a wiring V1 different from the current supply line ANODE. It is preferable to apply a voltage higher than the voltage applied to the wiring V0 to the wiring V1, similar to the current supply line ANODE. In FIG. 1(A), the first gate electrode of the capacitor element MC is connected to the current supply line ANODE. However, any wiring that can apply a voltage capable of shifting the threshold voltage of the transistor negatively may be used for other configurations. For example, as in the pixel PIX_B shown in FIG. 3(B), the first gate electrode may be connected to a wiring V1 different from the current supply line ANODE. It is preferable to apply a voltage higher than the voltage applied to the wiring V0 to the wiring V1, similar to the current supply line ANODE. In FIG. 1(A), the first gate electrode of the capacitor element MC is connected to the current supply line ANODE. However, any wiring that can apply a voltage capable of shifting the threshold voltage of the transistor negatively may be used for other configurations. For example, as in the pixel PIX_B shown in FIG. 3(B), the first gate electrode may be connected to a wiring V1 different from the current supply line ANODE. It is preferable to apply a voltage higher than the voltage applied to the wiring V0 to the wiring V1, similar to the current supply line ANODE. In FIG. 1(A), the first gate electrode of the capacitor element MC is connected to the current supply line ANODE. However, any wiring that can apply a voltage capable of shifting the threshold voltage of the transistor negatively may be used for other configurations. For example, as in the pixel PIX_B shown in FIG. 3(B), the first gate electrode may be connected to a wiring V1 different from the current supply line ANODE. It is preferable to apply a voltage higher than the voltage applied to the wiring V0 to the wiring V1, similar to the current supply line ANODE. In FIG. 1(A), the first gate electrode of the capacitor element MC is connected to the current supply line ANODE. However, any wiring that can apply a voltage capable of shifting the threshold voltage of the transistor negatively may be used for other configurations. For example, as in the pixel PIX_B shown in FIG. 3(B), the first gate electrode may be connected to a wiring V1 different from the current supply line ANODE. It is preferable to apply a voltage higher than the voltage applied to the wiring V0 to the wiring V1, similar to the current supply line ANODE. In FIG. 1(A), the first gate electrode of the capacitor element MC is connected to the current supply line ANODE. However, any wiring that can apply a voltage capable of shifting the threshold voltage of the transistor negatively may be used for other configurations. For example, as in the pixel PIX_B shown in FIG. 3(B), the first gate electrode may be connected to a wiring V1 different from the current supply line ANODE. It is preferable to apply a voltage higher than the voltage applied to the wiring V0 to the wiring V1, similar to the current supply line ANODE.

[0045] In FIG. 2(A), the transistors M1, M2, and M3 are configured to connect two gate electrodes. However, it may be configured to apply different signals to the first gate electrode and the second gate electrode. In FIG. 2(A), the transistors M1, M2, and M3 are configured to connect two gate electrodes. However, it may be configured to apply different signals to the first gate electrode and the second gate electrode. It may be. For example, like the pixel PIX_C shown in FIG. 4(A), the first gate electrodes of the transistors M1 and M2 may be connected to the scanning line GL, and the second gate electrodes may be connected to the wiring V0. With such a configuration, in the transistors M1 and M2, a scanning line GL made of a metal material can be arranged in the same layer as the first gate electrode. Therefore, even if the first gate electrode is formed of a conductive layer made of a metal material and the second gate electrode is formed of a conductive layer made of a metal oxide material, the problem that the resistance of the scanning line GL becomes high can be avoided. In addition, in order to reduce the resistance of the scanning line GL, the manufacturing cost for providing extra wiring made of a metal material can be reduced. In FIG. 2(A), the current supply line ANODE is shown arranged in a direction parallel to the signal line SL and the wiring V0, but other configurations may be used. For example, like the pixel PIX_D shown in FIG. 4(B), the current supply line ANODE can be arranged in a direction parallel to the scanning line GL.

[0046] In FIG. 2(A), the current supply line ANODE is shown arranged in a direction parallel to the signal line SL and the wiring V0, but other configurations may be used. For example, like the pixel PIX_D shown in FIG. 4(B), the current supply line ANODE can be arranged in a direction parallel to the scanning line GL. With such a configuration, the current supply line ANODE can be arranged in a direction parallel to the scanning line GL. This can also be done.

[0047] [Configuration Example of Transistor] Here, a configuration example of a transistor or a MOS capacitor applicable to the transistors M1, M2, M3, and the capacitive element MC will be described with reference to FIGS. 5(A), (B), and (C). FIGS. 5(A), (B), and (C) show an example of a semiconductor device having a transistor. The transistors shown in FIGS. 5

[0048] (A), (B), and (C) have a structure in which gate electrodes are provided above and below the semiconductor layer. (A), (B), and (C) have a structure in which gate electrodes are provided above and below the semiconductor layer. It is a structure.

[0049] FIG. 5(A) is a top view of the transistor 100, and FIG. 5(B) is a dashed line in FIG. 5(A). It is a cross-sectional view between lines X1 - X2, and FIG. 5(C) is a cross-section between the dashed-dotted lines Y1 - Y2 in FIG. 5(A). In FIG. 5(A), for clarity, components such as the insulating layer 110 are omitted and illustrated. In the top view of the transistor, and also in the subsequent drawings, similar to FIG. 5(A), some components may be omitted and illustrated. Also, the dashed-dotted line X1 - X 2 direction is sometimes referred to as the channel length (L) direction, and the dashed-dotted line Y1 - Y2 direction is sometimes referred to as the channel width (W) direction.

[0050] The transistor 100 shown in FIGS. 5(A), (B), and (C) includes a conductive layer 106 formed on a substrate 102, an insulating layer 104 on the conductive layer 106, an oxide semiconductor layer 108 on the insulating layer 104, an insulating layer 110 on the oxide semiconductor layer 108, a metal oxide layer 112 on the insulating layer 110, and an insulating layer 116 on the insulating layer 104, the oxide semiconductor layer 108, and the metal oxide layer 112. Further, the oxide semiconductor layer 108 has a channel region 108i in contact with the insulating layer 110, a source region 108s in contact with the insulating layer 116, and a drain region 1 08d in contact with the insulating layer 116.

[0051] The transistor 100 may also include a conductive layer 120a electrically connected to the source region 108s through an opening 141a provided in the insulating layer 116, and a conductive layer 120b electrically connected to the drain region 108d through an opening 141b provided in the insulating layer 116.

[0052] Note that the conductive layer 106 has a function as a first gate electrode and is composed of a metal material. The metal oxide layer 112 has a function as a second gate electrode and is composed of a metal oxide material. ​​​​​​​​​It is also provided. Further, the insulating layer 104 has a function as a first gate insulating layer, and the insulating layer 110 has a function as a second gate insulating layer.

[0053] Further, the insulating layer 116 contains either or both of nitrogen and hydrogen. By configuring the insulating layer 1 116 to contain either or both of nitrogen and hydrogen, either or both of nitrogen and hydrogen can be supplied to the oxide semiconductor layer 108 and the metal oxide layer 112. It can be supplied.

[0054] Examples of the insulating layer 116 include a nitride insulating layer. Examples of the nitride insulating layer include silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, etc., and it can be formed using these. The hydrogen concentration contained in the insulating layer 116 is preferably 1×10 atoms 22 / cm or more. 3

[0055] Further, the metal oxide layer 112 has a function of supplying oxygen to the insulating layer 110. Since the metal oxide layer 112 has a function of supplying oxygen to the insulating layer 110, it becomes possible to include excess oxygen in the insulating layer 110. Since the insulating layer 110 has an excess oxygen region, it is possible to supply the excess oxygen to the oxide semiconductor layer 108, more specifically, into the channel region 108i. Therefore, a highly reliable semiconductor device can be provided.

[0056] Examples of the insulating layer 110 include a single layer or a laminate of an oxide insulating layer or a nitride insulating layer. As the insulating layer 110, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, or G can be formed. silicon nitride, silicon nitride oxide, aluminum oxide, hafnium oxide, gallium oxide, or G It is sufficient to use a-Zn oxide or the like, and the film can be provided as a single layer or a multilayer.

[0057] The insulating layer 110 formed above the oxide semiconductor layer 108 contains excess oxygen. This makes it possible to selectively supply excess oxygen only to the channel region 108i. Alternatively, the channel region 108i, the source region 108s, and the drain region 108d may be over-doped. After the excess oxygen is supplied, the carrier density of the source region 108s and the drain region 108d is The degree can be selectively increased.

[0058] The metal oxide layer 112 is formed by absorbing nitrogen or hydrogen or both from the insulating layer 116. In other words, the metal oxide layer 112 is oxidized. It also functions as an oxide conductor (OC). Therefore, the metal oxide layer 112 has a higher carrier density than the oxide semiconductor layer 108.

[0059] The source region 108s and the drain region 108d of the oxide semiconductor layer 108, Each of the metal oxide layers 112 may contain an element that forms an oxygen deficiency. Representative elements that form oxygen vacancies are hydrogen, boron, carbon, nitrogen, fluorine, and phosphorus. , sulfur, chlorine, and rare gases. Representative examples of rare gas elements include helium, These include neon, argon, krypton, and xenon.

[0060] When an impurity element is added to an oxide semiconductor layer, a bond between a metal element and oxygen in the oxide semiconductor layer is formed. Alternatively, an impurity element is added to the oxide semiconductor layer, and oxygen vacancies are formed. Then, oxygen that has been bonded to a metal element in the oxide semiconductor layer is bonded to an impurity element, and the metal element Oxygen is desorbed therefrom, and oxygen vacancies are formed. As a result, the carrier density in the oxide semiconductor layer increases, and the conductivity becomes higher.

[0061] In the transistor 100, it is preferable that the side end portion of the insulating layer 110 and the side end portion of the metal oxide layer 112 are aligned. In other words, in the transistor 100, the upper end portion of the insulating layer 110 and the lower end portion of the metal oxide layer 112 are substantially aligned. For example, by processing the insulating layer 110 using the metal oxide layer 112 as a mask, the above structure can be obtained.

[0062] The oxide semiconductor layer 108 and the metal oxide layer 112 are formed of an oxide semiconductor such as In-M-Zn oxide (M is Al, Ga, Y, or Sn). Further, an In-Ga oxide or an In-Zn oxide may be used as the oxide semiconductor layer 108 and the metal oxide layer 112. In particular, when the oxide semiconductor layer 108 and the metal oxide layer 112 are formed of an oxide semiconductor composed of the same constituent elements, it is preferable because the manufacturing cost can be reduced.

[0063] When the oxide semiconductor layer 108 and the metal oxide layer 112 are In-M-Zn oxides, the atomic number ratio of the metal elements of the sputtering target used to form the In-M-Zn oxide preferably satisfies In≧M and Zn≧M. As such an atomic number ratio of the metal elements of the sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1 :1.2, In:M:Zn = 2:1:1.5, In:M:Zn = 2:1:2.3, In: M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1 ​​​​​​​​​​, In:M:Zn = 5:1:7 etc. are preferable. Note that the atomic ratio of the oxide semiconductor layer 108 to be formed, and the atomic ratio of the metal oxide layer 112 may each vary by about plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target. For example, when using a sputtering target with an atomic ratio of In:Ga:Zn = 4:2:4.1, the atomic ratio of the formed oxide semiconductor layer may be in the vicinity of In:Ga:Zn = 4:2:3. For example, in the case of using a sputtering target with an atomic ratio of In:Ga:Zn = 4:2:4.1, the atomic ratio of the formed oxide semiconductor layer may be in the vicinity of In:Ga:Zn = 4:2:3.

[0064] By using an oxide semiconductor layer with a low impurity concentration and a low defect level density as the channel region 108i, a transistor with even better electrical characteristics can be fabricated. Here, a low impurity concentration and a low defect level density (low oxygen deficiency) are referred to as high purity intrinsic or substantially high purity intrinsic. Alternatively, it is referred to as intrinsic or substantially intrinsic. An oxide semiconductor with high purity intrinsic or substantially high purity intrinsic has few carrier generation sources, so the carrier density may be reduced. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer has electrical characteristics (also referred to as normal off characteristics) in which the threshold voltage becomes positive. Also, an oxide semiconductor layer with high purity intrinsic or substantially high purity intrinsic may have a low trap level density because the defect level density is low. In addition, an oxide semiconductor layer with high purity intrinsic or substantially high purity intrinsic can obtain the characteristic of extremely small off-current. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer may become a transistor with small electrical characteristic variations and high reliability. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer may have electrical characteristics (also referred to as normal off characteristics) in which the threshold voltage becomes positive. Also, an oxide semiconductor layer with high purity intrinsic or substantially high purity intrinsic may have a low trap level density because the defect level density is low. In addition, an oxide semiconductor layer with high purity intrinsic or substantially high purity intrinsic can obtain the characteristic of extremely small off-current. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer may become a transistor with small electrical characteristic variations and high reliability. Also, an oxide semiconductor layer with high purity intrinsic or substantially high purity intrinsic may have a low trap level density because the defect level density is low. In addition, an oxide semiconductor layer with high purity intrinsic or substantially high purity intrinsic can obtain the characteristic of extremely small off-current. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer may become a transistor with small electrical characteristic variations and high reliability. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer may become a transistor with small electrical characteristic variations and high reliability. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer may become a transistor with small electrical characteristic variations and high reliability.

[0065] ​​On one hand, the source region 108s, the drain region 108d, and the metal oxide layer 112 are in contact with the insulating layer 116. Since the source region 108s, the drain region 108d, and the metal oxide layer 112 are in contact with the insulating layer 116, either one or both of hydrogen and nitrogen are added from the insulating layer 116 to the source region 108s, the drain region 108d, and the metal oxide layer 112, resulting in an increase in the carrier density.

[0066] The carrier density of the oxide semiconductor layer will be described below.

[0067] Factors affecting the carrier density of the oxide semiconductor layer include oxygen vacancies (Vo) in the oxide semiconductor layer, or impurities in the oxide semiconductor layer, etc.

[0068] When the number of oxygen vacancies in the oxide semiconductor layer increases, when hydrogen binds to the oxygen vacancies (this state is also called VH), O the density of defect levels increases. Or, when the impurities in the oxide semiconductor layer increase, the density of defect levels increases due to the impurities. Therefore, by controlling the density of defect levels in the oxide semiconductor layer, the carrier density of the oxide semiconductor layer can be controlled.

[0069] As shown in FIG. 5(C), the oxide semiconductor layer 108 is positioned to face the conductive layer 106 that functions as the first gate electrode and the metal oxide layer 112 that functions as the second gate electrode, respectively, and is sandwiched between the conductive layer or the oxide semiconductor layer that functions as two gate electrodes.

[0070] With the configuration of FIG. 5(C), the transistor 100 functions as a transistor. In some cases, the oxide semiconductor layer 108 included in the transistor 100 can be electrically surrounded by the electric field due to the scanning signal of the conductive layer 106 that functions as the first gate electrode and the electric field due to the constant voltage of the metal oxide layer 112 that functions as the second gate electrode. The transistor 100 may be configured to have openings provided in the insulating layer 110 and the insulating layer 104 for connecting the first gate electrode and the second gate electrode, although not shown in FIG. 5(C). By having such a configuration, the oxide semiconductor layer 108 included in the transistor 100 can be electrically surrounded by both the electric fields of the conductive layer 106 that functions as the first gate electrode and the metal oxide layer 112 that functions as the second gate electrode.

[0071]

[0072] When the transistor 100 is made to function as a MOS capacitor, a voltage for negatively shifting the threshold voltage of the transistor can be applied to the conductive layer 106 that functions as the first gate electrode. The MOS capacitor can be constituted by the oxide semiconductor layer 108, the insulating layer 110, and the metal oxide layer 112 that functions as the second gate electrode.

[0073] When the transistor 100 is made to function as a MOS capacitor, a capacitance can be formed by the oxide semiconductor layer 108, the insulating layer 110, and the metal oxide layer 112 shown in the cross-sectional view of FIG. 6(A). That is, a MOS capacitance corresponding to the capacitance element MC in the circuit diagram of FIG. 5(B) can be formed. In FIGS. 6(A) and 6(B), “Vg”, “Vs”, and “Vb” represent the voltages corresponding in the circuit diagram and the cross-sectional view, similar to FIG. 2(A). ​​​​​​​​​​​​​​​

[0074] In the configurations of FIGS. 6(A) and 6(B), a voltage that shifts the threshold voltage of the transistor negatively is applied as the voltage Vg applied to the conductive layer 106. The film thickness 110t of the insulating layer 110 that forms the MOS capacitor is smaller than the film thickness 104t of the insulating layer 104. Therefore, a small voltage is applied to the metal oxide layer 112, and a high capacitance can be ensured even when a capacitance is formed between the metal oxide layer 112 with the insulating layer 110 interposed therebetween, and a large capacitance can be obtained with a small area.

[0075] [Configuration example of top view] Next, FIG. 7 shows an example of a top view applicable to the circuit configuration of the pixel PIX_D in FIG. 4(B), excluding the configuration of a light-emitting element or the like. FIG. 8 shows the conductive layers and semiconductor layers or the like in the vertical relationship in the top view of FIG. 7, each separated by layer and shown connected through openings. Further, FIG. 9(A) is a cross-sectional view taken along the dotted line P1 - P2 in FIG. 7, and FIG. 9(B) is a cross-sectional view taken along the dotted line Q1 - Q2 in FIG. 7. FIG. 10 is a circuit diagram showing a plurality of pixels arranged corresponding to the arrangement of the transistors in the top view of FIG. 7.

[0076] In the top view of FIG. 7, a scanning line GL, a signal line SL, a wiring V0, a current supply line ANODE are shown, as well as a transistor M1, a transistor M2, a transistor M3, and a capacitor element MC. In the layer structure of the conductive layer, metal oxide layer, and oxide semiconductor layer, illustration of the insulating layer and the like is omitted.

[0077] The layer structures of the conductive layer, metal oxide layer, and oxide semiconductor layer that form each wiring and the like in FIG. 7 This can be understood from FIGS. 8 and 9. On the substrate SUB, a conductive layer 151, a conductive layer 152, and a conductive layer 153 that function as a first gate electrode are provided. Next, an oxide semiconductor layer 161 and an oxide semiconductor layer 162 are provided via an insulating layer 154 that functions as a first gate insulating layer. Next, a metal oxide layer 171, a metal oxide layer 172, and a metal oxide layer 173 that function as a second gate electrode are provided via an insulating layer 163 that functions as a second gate insulating layer. Next, via an insulating layer 174 that selectively increases the carrier density in a part of the oxide semiconductor layer 161, a part of the oxide semiconductor layer 162, and the metal oxide layer 171, the metal oxide layer 172, and the metal oxide layer 173 to increase conductivity, a conductive layer 181, a conductive layer 182, a conductive layer 183, a conductive layer 184, and a conductive layer 185 that function as a source electrode, a drain electrode, or various wirings of the transistor are provided. Next, an insulating layer 186, an insulating layer 187, and an insulating layer 188 that function as an interlayer insulating layer are provided. Further, an opening 190 that reaches the conductive layer 185 is provided in the insulating layer 186, the insulating layer 187, and the insulating layer 188. This opening 190 is an opening for forming a pixel electrode thereafter and connecting it to a light-emitting element provided thereon. Also, in FIGS. 7 and 8, the configuration marked with a cross in a square represents an opening formed in the insulating layer. By the opening, the conductive layer, the metal oxide layer, and the oxide semiconductor layer of each layer are connected as shown by the arrow in FIG. 8. Further, FIG. 8 shows a conductive layer 151 that becomes a scanning line GL, a conductive layer 152 that becomes a current supply line ANODE, a conductive layer 181 that becomes a wiring V0, and a conductive layer 182 that becomes a signal line SL.

[0078]

[0079] As can be seen from the diagrams of FIGS. 7, 8, and 9, in transistors M1, M2, and M3, the first gate electrode and the second gate electrode are connected. With this configuration, compared to the case where the gate electrodes are not connected to each other, the amount of current flowing through the transistor can be increased.

[0080] Also, as can be seen from the diagrams of FIGS. 7, 8, and 9, a conductive layer 152 connected to a current supply line ANODE is disposed below a metal oxide layer 171, an insulating layer 163, and an oxide semiconductor layer 161 that form a capacitive element MC. In this configuration, the voltage of the current supply line ANODE applied to the conductive layer 152 shifts the threshold voltage of the transistor negatively, and since the film thickness of the insulating layer 163 is smaller than the film thickness of the insulating layer 154, a high capacitance can be ensured. Therefore, a large capacitance can be achieved with a small area.

[0081] Note that the conductive layer 152 connected to the current supply line ANODE and the conductive layer 151 serving as a scanning line GL are made of a metal material having light-shielding properties and conductivity, and thus have a function as a light-shielding layer. Therefore, fluctuations in the electrical characteristics of the MOS capacitor and the transistor can be reduced.

[0082] Also, FIG. 10 is a circuit diagram shown as 2×2 pixels PIX_ UL, PIX_UR, PIX_LL, and PIX_LR corresponding to the top view of the pixel described in FIG. 7. In FIG. 10, pixels arranged in two rows of the m-th row and the (m + 1)-th row, and two columns of the n-th column and the (n + 1)-th column are illustrated. In FIG. 10, the scanning line GL_m in the m-th row, the scanning line GL_m+1 in the (m + 1)-th row, the signal line SL_n in the n-th column, and the signal line SL_n+1 in the (n + 1)-th column are shown.​​​​​ shows wiring V0 and current supply line ANODE.

[0083] As shown in FIG. 10, for pixels PIX_UL and PIX_UR, transistors M1, M2, M3 and capacitor element MC that form the pixel are arranged symmetrically with respect to the wiring V0 and are configured to be connected to the same wiring V0. For pixels PIX_LL and PIX_LR as well, transistors M1, M2, M3 and capacitor element MC that form the pixel are arranged symmetrically with respect to the wiring V0 and are configured to be connected to the same wiring V0. Similarly, for pixels PIX_UL and PIX_LL, transistors M1, M2, M3 and capacitor element MC that form the pixel are arranged symmetrically with respect to the current supply line ANODE and are configured to be connected to the same current supply line ANODE. For pixels PIX_UR and PIX_LR as well, transistors M1, M2, M3 and capacitor element MC that form the pixel are arranged symmetrically with respect to the current supply line ANODE

[0084] and are configured to be connected to the same current supply line ANODE. By arranging the elements and wirings shown in FIG. 10 etc., the number of wirings etc. arranged between pixels for connecting to each pixel can be reduced. The configuration of FIG. 10 is preferable because when designing to increase the pixel fineness, the pixel area can be reduced by the amount of reduction in the number of wirings etc. [Modification Example] The circuit configuration applicable to one aspect of the present invention is not limited to the pixel configuration having transistors M1, M2 and M3 in FIG. 1(A). For example, as shown in FIG. 11(A), two or less are acceptable.

[0085] By arranging the elements and wirings shown in FIG. 10 etc., the number of wirings etc. arranged between pixels for connecting to each pixel can be reduced. The configuration of FIG. 10 is preferable because when designing to increase the pixel fineness, the pixel area can be reduced by the amount of reduction in the number of wirings etc. The configuration of FIG. 10 is a preferable design for increasing the pixel fineness because the pixel area can be reduced by the amount of reduction in the number of wirings etc. When designing to increase the pixel fineness, the pixel area can be reduced by the amount of reduction in the number of wirings etc., so it is preferable.

[0086] [Modification Example] The circuit configuration applicable to one aspect of the present invention is not limited to the pixel configuration having transistors M1, M2 and M3. For example, as shown in FIG. 11(A), two or less The present invention is also applicable to pixel configurations having transistors.

[0087] The pixel configuration of the pixel PIX_E shown in FIG. 11A includes a transistor M1 and a transistor M3, a capacitance element MC, and a light-emitting element EL. This corresponds to a circuit configuration in which resistor M2 is omitted.

[0088] In the configuration shown in FIG. 11(A), a transistor is used as a MOS capacitor. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. A voltage is applied to negatively shift the threshold voltage of the transistor, and the second gate electrode, a metal In a MOS capacitor that is composed of an oxide layer, an insulating layer, and an oxide semiconductor layer, The capacitance when a voltage is applied can be increased. The insulating layer between the first gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer. Since a high capacity can be ensured, a large capacity can be achieved in a small area.

[0089] A circuit configuration that can be applied to one embodiment of the present invention is not limited to the pixel configuration in FIG. For example, as shown in FIG. 11B, a pixel configuration having four or more transistors is applicable.

[0090] The pixel configuration of the pixel PIX_F shown in FIG. 11A includes a transistor M1 and a transistor M2, a transistor M3, a transistor M4, a transistor M5, and a capacitive element MC The pixel configuration includes a signal line SL, a current supply line ANOD, and a light emitting element EL. E, wiring V0, common wiring CATHODE, and scanning lines GL1, GL2, and GL3. It works like this.

[0091] Even in the configuration shown in FIG. 11(B), the capacitance in which the transistor functions as a MOS capacitor In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. Then, a voltage that negatively shifts the threshold voltage of the transistor is applied, and in the MOS capacitor composed of the metal oxide layer, the insulating layer, and the oxide semiconductor layer, which is the second gate electrode, the capacitance when a low voltage is applied can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and since a high capacitance can be ensured, a large capacitance can be obtained with a small area. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. Then, a voltage that negatively shifts the threshold voltage of the transistor is applied, and in the MOS capacitor composed of the metal oxide layer, the insulating layer, and the oxide semiconductor layer, which is the second gate electrode, the capacitance when a low voltage is applied can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and since a high capacitance can be ensured, a large capacitance can be obtained with a small area. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. Then, a voltage that negatively shifts the threshold voltage of the transistor is applied, and in the MOS capacitor composed of the metal oxide layer, the insulating layer, and the oxide semiconductor layer, which is the second gate electrode, the capacitance when a low voltage is applied can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and since a high capacitance can be ensured, a large capacitance can be obtained with a small area. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. Then, a voltage that negatively shifts the threshold voltage of the transistor is applied, and in the MOS capacitor composed of the metal oxide layer, the insulating layer, and the oxide semiconductor layer, which is the second gate electrode, the capacitance when a low voltage is applied can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and since a high capacitance can be ensured, a large capacitance can be obtained with a small area. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. Then, a voltage that negatively shifts the threshold voltage of the transistor is applied, and in the MOS capacitor composed of the metal oxide layer, the insulating layer, and the oxide semiconductor layer, which is the second gate electrode, the capacitance when a low voltage is applied can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and since a high capacitance can be ensured, a large capacitance can be obtained with a small area. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. Then, a voltage that negatively shifts the threshold voltage of the transistor is applied, and in the MOS capacitor composed of the metal oxide layer, the insulating layer, and the oxide semiconductor layer, which is the second gate electrode, the capacitance when a low voltage is applied can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and since a high capacitance can be ensured, a large capacitance can be obtained with a small area.

[0092] Also, the circuit configuration applicable to one aspect of the present invention is not limited to the pixel configuration having a light-emitting element, and can also be applied to a pixel having a liquid crystal element and a light-emitting element. Also, the circuit configuration applicable to one aspect of the present invention is not limited to the pixel configuration having a light-emitting element, and can also be applied to a pixel having a liquid crystal element and a light-emitting element.

[0093] As an example, the pixel configuration of the pixel PIX_G shown in FIG. 12(A) illustrated has a transistor M1, a transistor M2, a transistor M3, a capacitance element MC, a transistor M6, a capacitance element MC1, and a liquid crystal element LC. Also, the pixel configuration operates by the signal line SL_LC, the signal line SL_EL, the current supply line ANODE, the wiring V0, the scanning line GL_EL, the scanning line GL_LC, and the common wiring CATHODE. As an example, the pixel configuration of the pixel PIX_G shown in FIG. 12(A) illustrated has a transistor M1, a transistor M2, a transistor M3, a capacitance element MC, a transistor M6, a capacitance element MC1, and a liquid crystal element LC. Also, the pixel configuration operates by the signal line SL_LC, the signal line SL_EL, the current supply line ANODE, the wiring V0, the scanning line GL_EL, the scanning line GL_LC, and the common wiring CATHODE. As an example, the pixel configuration of the pixel PIX_G shown in FIG. 12(A) illustrated has a transistor M1, a transistor M2, a transistor M3, a capacitance element MC, a transistor M6, a capacitance element MC1, and a liquid crystal element LC. Also, the pixel configuration operates by the signal line SL_LC, the signal line SL_EL, the current supply line ANODE, the wiring V0, the scanning line GL_EL, the scanning line GL_LC, and the common wiring CATHODE. As an example, the pixel configuration of the pixel PIX_G shown in FIG. 12(A) illustrated has a transistor M1, a transistor M2, a transistor M3, a capacitance element MC, a transistor M6, a capacitance element MC1, and a liquid crystal element LC. Also, the pixel configuration operates by the signal line SL_LC, the signal line SL_EL, the current supply line ANODE, the wiring V0, the scanning line GL_EL, the scanning line GL_LC, and the common wiring CATHODE. As an example, the pixel configuration of the pixel PIX_G shown in FIG. 12(A) illustrated has a transistor M1, a transistor M2, a transistor M3, a capacitance element MC, a transistor M6, a capacitance element MC1, and a liquid crystal element LC. Also, the pixel configuration operates by the signal line SL_LC, the signal line SL_EL, the current supply line ANODE, the wiring V0, the scanning line GL_EL, the scanning line GL_LC, and the common wiring CATHODE.

[0094] In the pixel PIX_G, the video signal applied to the gate electrode of the transistor M3 is applied from the signal line SL_EL under the control of the scanning signal applied to the scanning line GL_EL. In the pixel PIX_G, the video signal applied to one electrode of the liquid crystal element LC is applied from the signal line SL_LC under the control of the scanning signal applied to the scanning line GL_LC. In the pixel PIX_G, the video signal applied to the gate electrode of the transistor M3 is applied from the signal line SL_EL under the control of the scanning signal applied to the scanning line GL_EL. In the pixel PIX_G, the video signal applied to one electrode of the liquid crystal element LC is applied from the signal line SL_LC under the control of the scanning signal applied to the scanning line GL_LC. In the pixel PIX_G, the video signal applied to the gate electrode of the transistor M3 is applied from the signal line SL_EL under the control of the scanning signal applied to the scanning line GL_EL. In the pixel PIX_G, the video signal applied to one electrode of the liquid crystal element LC is applied from the signal line SL_LC under the control of the scanning signal applied to the scanning line GL_LC.It is supplied from the signal line SL_LC by controlling the scanning signal applied to. That is, for each pixel PIX _G, the gradation display of the liquid crystal element LC and the light emitting element EL can be controlled separately. In such a configuration, different from the control of the backlight that lights up uniformly in a plurality of pixels, the light emission of the light emitting element EL according to the image to be displayed can be controlled at the minimum unit such as the pixel level. Therefore, unnecessary light emission can be suppressed. Therefore, the display device having the pixel PIX_G can achieve low power consumption.

[0095] Also, in the configuration of the pixel PIX_G, the intensity of the reflected light using external light by the reflective electrode of the liquid crystal element LC can be adjusted in the liquid crystal layer to perform gradation display. Therefore, the display device having the pixel PIX_ G can improve visibility outdoors.

[0096] Also, in the configuration of the pixel PIX_G, gradation display is performed by adjusting the intensity of the light emitted by the light emitting element EL. Therefore, the display device having the pixel PIX_G can improve visibility indoors where the intensity of external light is small.

[0097] In addition, for the configuration of controlling the liquid crystal element LC outdoors to perform display, or controlling the light emitting element EL indoors to perform display, a configuration in which a sensor capable of measuring the illuminance is provided in the display device is sufficient.

[0098] Also, in the configuration shown in Fig. 12(A), in the capacitive elements MC and MC1 in which the transistor functions as a MOS capacitor, the voltage of the current supply line ANODE is applied to the first gate electrode. And a voltage that negatively shifts the threshold voltage of the transistor is applied, and the MOS capacitor composed of the metal oxide layer, the insulating layer, and the oxide semiconductor layer, which is the second gate electrode. ​​​​​ In this case, the capacitance when a low voltage is applied can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and a high capacitance can be ensured, so that a large capacitance can be obtained with a small area. .

[0099] A display device having a pixel PIX_G shown in FIG. 12(A) can be provided with a light-emitting element EL and a liquid crystal element LC stacked as shown in the cross-sectional schematic diagram of FIG. 12(B). In FIG. 12(B), a layer 191 having a transistor is provided between the light-emitting element EL and the liquid crystal element LC. The layer 191 having a transistor includes a transistor M1, a transistor M2, a transistor M3, a capacitor element MC, a transistor M6, and a capacitor element MC1. The liquid crystal element LC in FIG. 12(B) has an electrode 192 that can reflect external light (L). The electrode 192 is provided with an opening 193 for transmitting light (L) from the light-emitting element. REF ) EL ) .

[0100] In the display device in which the cross-sectional schematic diagram shown in FIG. 12(B) is applied to the pixel PIX_G described in FIG. 12(A), a configuration in which the light-emitting element EL and the liquid crystal element LC are switched and displayed according to the illuminance is effective. For example, when the illuminance is high, a configuration in which the liquid crystal element LC is driven to obtain a desired gradation is adopted, and when the illuminance is low, a configuration in which the light-emitting element EL is driven to obtain a desired gradation is adopted. By adopting such a configuration, a display device with low power consumption and excellent visibility can be obtained.

[0101] This embodiment can be appropriately combined with at least a part of other embodiments described in this specification. ​​​​​​​​​​​​They can be implemented in combination.

[0102] (Embodiment 2) In this embodiment, an example of the cross-sectional configuration of a display device according to an aspect of the present invention will be described.

[0103] 〔Example of the configuration of the display device〕 FIG. 13 shows a schematic top view of a display device 10 to be described below. The display device 10 includes a pixel portion 11, a scanning line driving circuit 12, a signal line driving circuit 13, a terminal portion 15, a plurality of wirings 16a, and a plurality of wirings 16b and the like.

[0104] 〔Example of the cross-sectional configuration 1〕 FIG. 14 is a schematic cross-sectional view of the display device 10. FIG. 14 corresponds to a cross-section along, for example, the cutting line A1 -A2 in FIG. 13.

[0105] The display device 10 has a configuration in which a first substrate 201 and a second substrate 202 are bonded together by an adhesive layer 220.

[0106] On the first substrate 201, there are provided a terminal portion 15, a wiring 16b, a transistor 252 that constitutes the signal line driving circuit 13, a transistor 251 that constitutes the pixel portion 11, a transistor 252, a capacitor element 253, a light-emitting element 254, and the like. Also, on the first substrate 201, there are provided an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, a spacer 215, and the like.

[0107] On the side of the second substrate 202 facing the first substrate 201, there are provided an insulating layer 221, a light-shielding layer 231, a colored layer 2 32, a structure 230a, a structure 230b, and the like.

[0108] The light-emitting element 254 is provided on the insulating layer 213. The light-emitting element 254 has a first electrode It includes a pixel electrode 225 that functions as, an EL layer 222, and a second electrode 223. Also, an optical adjustment layer 224 is provided between the pixel electrode 225 and the EL layer 222. The insulating layer 214 is provided so as to cover the ends of the pixel electrode 225 and the optical adjustment layer 224. The transistor 251 is a transistor that functions as the transistor M1 or M2 described in FIG. 1(A) of the above Embodiment 1. The transistor 252 is a transistor that functions as the transistor M3 described in FIG. 1(A) of the above Embodiment 1. The transistor 251, 252, and 255 are provided with a conductive layer 275 that functions as a first gate electrode and a conductive layer 272 that functions as a second gate electrode. That is, it has a configuration in which a semiconductor in which a channel is formed is sandwiched between two gate electrodes. The conductive layer 275 corresponds to the conductive layer 106 that functions as the first gate electrode described in FIG. 2 of the above Embodiment 1. The conductive layer 272 corresponds to the metal oxide layer 112 that functions as the second gate electrode described in FIG. 2 of the above Embodiment 1.

[0109] The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen. Also, in a transistor connected to a light-emitting element such as the transistor 252, it is preferable to have a configuration in which the same signal is applied to these two gate electrodes by electrically connecting them. Such a transistor can increase the field-effect mobility compared to other transistors. The transistor 251, 252, and 255 are provided with a conductive layer 275 that functions as a first gate electrode and a conductive layer 272 that functions as a second gate electrode. That is, it has a configuration in which a semiconductor in which a channel is formed is sandwiched between two gate electrodes. The conductive layer 275 corresponds to the conductive layer 106 that functions as the first gate electrode described in FIG. 2 of the above Embodiment 1. The conductive layer 272 corresponds to the metal oxide layer 112 that functions as the second gate electrode described in FIG. 2 of the above Embodiment 1.

[0110] The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen. The transistor 251, 252, and 255 are provided with a conductive layer 275 that functions as a first gate electrode and a conductive layer 272 that functions as a second gate electrode. That is, it has a configuration in which a semiconductor in which a channel is formed is sandwiched between two gate electrodes. The conductive layer 275 corresponds to the conductive layer 106 that functions as the first gate electrode described in FIG. 2 of the above Embodiment 1. The conductive layer 272 corresponds to the metal oxide layer 112 that functions as the second gate electrode described in FIG. 2 of the above Embodiment 1. The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen. The conductive layer 275 corresponds to the conductive layer 106 that functions as the first gate electrode described in FIG. 2 of the above Embodiment 1. The conductive layer 272 corresponds to the metal oxide layer 112 that functions as the second gate electrode described in FIG. 2 of the above Embodiment 1. The conductive layer 272 corresponds to the metal oxide layer 112 that functions as the second gate electrode described in FIG. 2 of the above Embodiment 1. The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen.

[0111] The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen. The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen.

[0112] Also, in a transistor connected to a light-emitting element such as the transistor 252, it is preferable to have a configuration in which the same signal is applied to these two gate electrodes by electrically connecting them. Such a transistor can increase the field-effect mobility compared to other transistors. The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen. The conductive layer 275 can stabilize the electrical characteristics of the transistor by functioning as an electrode that can repair the oxygen deficiency of the semiconductor layer 271 by releasing oxygen. is possible, and the on-current can be increased. As a result, a circuit capable of high-speed operation can be fabricated.

[0113] The capacitive element 253 is composed of a part of the conductive layer 275, a part of the insulating layer 211, and a part of the semiconductor layer 271. However, as shown in FIG. 14, it may be composed of a part of the conductive layer 274, a part of the insulating layer 217, and a part of the conductive layer 273.

[0114] FIG. 14 shows an example in which the light-emitting element 254 is a light-emitting element having a top emission structure. The light emitted from the light-emitting element 254 is emitted toward the second substrate 202 side. With such a configuration, transistors, capacitive elements, circuits, wirings, etc. can be arranged on the lower side (the first substrate 201 side) of the light-emitting element 254, so that the aperture ratio of the pixel portion 11 can be increased.

[0115] On the surface of the second substrate 202 on the first substrate 201 side, a coloring layer 23 2 overlapping the light-emitting element 254 is provided. Further, a light-shielding layer 231 may be provided in a portion where the coloring layer 232 is not provided. As shown in FIG. 14, the light-shielding layer 231 may be provided at a position overlapping the signal line driving circuit 13. Further, a light-transmitting overcoat layer covering the coloring layer 232 and the light-shielding layer 231 may be provided.

[0116] Also, on the first substrate 201 side of the second substrate 202, a structure 230a is provided in a region inside the adhesive layer 220, and a structure 230b is provided in a region outside the adhesive layer 220. The structures 230a and 230b suppress the crack from progressing when a crack occurs in the insulating layer 221 or the second substrate 202 at the end of the second substrate 202. function. ​​It has capabilities. In FIG. 14, as the structures 230a and 230b, an example is shown in the case of a laminated structure of a layer made of the same film as the light-shielding layer 231 and a layer made of the same film as the coloring layer 232a. By making it a laminated structure of two or more layers in this way, the effect of further suppressing the progress of cracks can be enhanced. Here, a configuration is shown in which the structures 230a and 230b are arranged on both sides with the adhesive layer 220 interposed therebetween, but either one may be sufficient. Also, when there is no fear of cracks occurring (for example, when the rigidity of the second substrate 202 or the like is high), the structures 230a and 230b may not be provided. The spacer 215 is provided on the insulating layer 214. The spacer 215 has a function as a gap spacer that controls so that the distance between the first substrate 201 and the second substrate 202 does not shrink more than necessary. Also, the spacer 215 preferably has a portion where the angle between a part of its side surface and the surface to be formed is preferably 45 degrees or more and 120 degrees or less, more preferably 60 degrees or more and 100 degrees or less, and even more preferably 75 degrees or more and 90 degrees or less. By doing so, a region where the thickness of the EL layer 222 is thin is likely to be formed on the side surface of the spacer 215. Therefore, it is possible to suppress the phenomenon of current flowing through the EL layer 222 and causing emission between adjacent light-emitting elements. In particular, when the pixel portion 11 is high-definition, since the distance between adjacent light-emitting elements becomes small, it is effective to provide the spacer 215 having such a shape between the light-emitting elements. Furthermore, it is particularly effective when the EL layer 222 has a layer containing a material with high conductivity.

[0117]

[0118] ​​​​​​​​​​​​​​​Further, when forming the EL layer 222, the second electrode 223, etc., the spacer 215 may function as a mask gap that prevents the surface to be formed from being damaged by the mask. When using a mask, it may have the function of a mask gap so that the surface to be formed is not damaged by the mask. It may have the function as a mask gap.

[0119] The spacer 215 is preferably provided so as to overlap with a wiring that intersects the scanning line.

[0120] FIG. 14 shows an example of the display device 10 using the color filter method. For example, as the coloring layer 232, a configuration in which any one of red (R), green (G), and blue (B) is applied to three sub-pixels that represent one color may be used. In addition to this, applying white (W) or yellow (Y) sub-pixels is preferable because it improves color reproducibility and reduces power consumption. As the coloring layer 232, a configuration using three sub-pixels to which any one of red (R), green (G), and blue (B) is applied to represent one color may be used. In addition, applying white (W) or yellow (Y) sub-pixels is preferable because it improves color reproducibility and reduces power consumption. It is preferable. It is preferable.

[0121] In the light-emitting element 254, by combining the coloring layer 232 and the optical adjustment layer 224 to form a microcavity structure, light with high color purity can be extracted from the display device 10. By combining the coloring layer 232 and the optical adjustment layer 224 to form a microcavity structure, light with high color purity can be extracted from the display device 10. The thickness of the optical adjustment layer 224 may be different according to the color of each sub-pixel. Also, depending on the sub-pixel, a configuration without an optical adjustment layer may be used. Depending on the sub-pixel, a configuration without an optical adjustment layer may be used.

[0122] Further, as the EL layer 222 included in the light-emitting element 254, it is preferable to apply an EL layer that emits white light. By applying such a light-emitting element 254, since it is not necessary to separately coat the EL layer 222 for each sub-pixel, cost reduction and yield improvement can be achieved, and in addition, high definition of the pixel portion 11 becomes easy. Also, by providing an optical adjustment layer with different thicknesses for each sub-pixel, a configuration in which the EL layer 222 is separately coated for each sub-pixel may be used. In that case, optical adjustment It is preferable to apply an EL layer that emits white light. By applying such a light-emitting element 254, since it is not necessary to separately coat the EL layer 222 for each sub-pixel, cost reduction and yield improvement can be achieved, and in addition, high definition of the pixel portion 11 becomes easy. Since it is not necessary to separately coat the EL layer 222 for each sub-pixel, cost reduction and yield improvement can be achieved, and in addition, high definition of the pixel portion 11 becomes easy. By providing an optical adjustment layer with different thicknesses for each sub-pixel, a configuration in which the EL layer 222 is separately coated for each sub-pixel may be used. In that case, optical adjustment For each sub-pixel, a configuration in which the EL layer 222 is separately coated may also be used. In that case, optical adjustment It may be configured such that neither, either one, or both of the layer or the colored layer are provided. At this time , in each sub-pixel, only at least the light-emitting layer of the EL layer 222 is separately coated and formed, and the other layers may be formed without separate coating.

[0123] FIG. 14 shows an example in which an FPC 242 electrically connected to the terminal portion 15 is provided. Therefore, the display device 10 shown in FIG. 14 can also be called a display module. In addition, a display device in a state where no FPC or the like is provided can also be called a display panel.

[0124] The terminal portion 15 is electrically connected to the FPC 242 via the connection layer 243.

[0125] In FIG. 14, the terminal portion 15 shows a configuration having a laminated structure of a conductive layer made of the same conductive film as the wiring 16b and the pixel electrode 225. In this way, by forming the terminal portion 15 with a structure in which a plurality of conductive layers are laminated, not only can the electrical resistance be reduced, but also the mechanical strength can be increased, which is preferable. It is preferable to use a material in which impurities such as water and hydrogen do not easily diffuse for the insulating layer 211 and the insulating layer 221. That is, the insulating layer 211 and the insulating layer 221 can function as a barrier film. With such a configuration, even if a material having moisture permeability is used as the first substrate 201 or the second substrate 202, it is possible to effectively suppress the intrusion of impurities from the outside into the light-emitting element 254 or the transistor, etc., and a highly reliable display device can be realized. It is preferable because it is possible.

[0126] It is preferable to use a material in which impurities such as water and hydrogen do not easily diffuse for the insulating layer 211 and the insulating layer 221. That is, the insulating layer 211 and the insulating layer 221 can function as a barrier film. With such a configuration, even if a material having moisture permeability is used as the first substrate 201 or the second substrate 202, it is possible to effectively suppress the intrusion of impurities from the outside into the light-emitting element 254 or the transistor, etc., and a highly reliable display device can be realized. That is, the insulating layer 211 and the insulating layer 221 can function as a barrier film. With such a configuration, even if a material having moisture permeability is used as the first substrate 201 or the second substrate 202, it is possible to effectively suppress the intrusion of impurities from the outside into the light-emitting element 254 or the transistor, etc. and a highly reliable display device can be realized.

[0127] In FIG. 14, a hollow seal having a space 250 is provided between the first substrate 201 and the second substrate 202. illustrates the case of having a structure. For example, the space 250 may be filled with an inert gas such as nitrogen or a noble gas and the like. Also, the space 250 may be filled with a liquid crystal material or a fluid material such as oil and the like. Alternatively, the space 250 may be under reduced pressure. Note that the sealing method is not limited to this, and it may be a solid seal filled with resin or the like.

[0128] 〔Example of cross-sectional configuration 2〕 FIG. 15 shows a configuration example of a display device suitable for the case where the pixel portion 11 and the signal line driving circuit 13 are bent and used.

[0129] The display device 10 shown in FIG. 15 shows an example of the case of having a solid seal structure in which the first substrate 201 and the second substrate 202 are bonded together by a sealing material 260.

[0130] Further, an adhesive layer 261 is provided on the first substrate 201, and an insulating layer 216 is provided on the adhesive layer 261. Transistors, light-emitting elements, etc. are provided on the insulating layer 216. The insulating layer 216 can use a material in which impurities such as water and hydrogen do not easily diffuse, similar to the insulating layer 2 21.

[0131] Also, an adhesive layer 262 is provided between the second substrate 202 and the insulating layer 221.

[0132] Further, as shown in FIG. 15, the insulating layer 213 has an opening on the outer peripheral side of the first substrate 201 rather than the pixel portion 11 and the signal line driving circuit 13. For example, when a resin material is used as the insulating layer 213, it is preferable to provide an opening surrounding the pixel portion 11, the signal line driving circuit 13, etc. By adopting such a configuration, since the vicinity of the side surface in contact with the outside of the insulating layer 213 and the portion overlapping the pixel portion 11, the signal line driving circuit 13, etc. are not continuous, the insulating layer is not affected from the outside and the portion overlapping the pixel portion 11, the signal line driving circuit 13, etc. are not continuous, so that the insulating layer is not affected from the outside ​​​​​​Diffusion of impurities such as water and hydrogen through 213 can be suppressed.

[0133] As shown in FIG. 15, by adopting a solid sealing structure, the distance between the first substrate 201 and the second substrate 202 can be easily kept uniform. Therefore, as the first substrate 201 and the second substrate 2 02, a flexible substrate can be preferably used. Therefore, part or all of the pixel portion 11 , the scanning line driving circuit 12, and the signal line driving circuit 13 can be bent and used . For example, by attaching the display device 10 to a curved surface or folding the pixel portion of the display device 10 , various forms of electronic devices can be realized. [Modification Example] Hereinafter, an example of a touch panel having a touch sensor will be described.

[0134] FIG. 16 shows an example of a touch panel in which an on-cell type touch sensor is applied to the configuration exemplified in FIG. 14.

[0135] On the outer surface of the second substrate 202, a conductive layer 291 and a conductive layer 292 are provided, and an insulating layer 294 is provided to cover them. Further, a conductive layer 293 is provided on the insulating layer 294. The conductive layer 293 is electrically connected to two conductive layers 292 provided with the conductive layer 291 interposed therebetween through an opening provided in the insulating layer 294. Further, the insulating layer 294 and the substrate 296 are bonded together by an adhesive layer 295.

[0136] The capacitance formed between the conductive layer 291 and the conductive layer 292 changes as the object to be detected approaches. Thereby, it is possible to detect that the object to be detected approaches or contacts. By arranging a plurality of conductive layers 291 and a plurality of conductive layers 292 in a lattice pattern, position information can be obtained. ​​​It can be done.

[0137] Also, a terminal portion 299 is provided in a region near the outer periphery of the second substrate 202. The terminal portion 2 99 is electrically connected to the FPC 297 via the connection layer 298.

[0138] Here, the substrate 296 can also be used as a substrate directly touched by a detector such as a finger or a stylus. In that case, it is preferable to provide a protective layer (such as a ceramic coat) on the substrate 296. The protective layer can use an inorganic insulating material such as silicon oxide, aluminum oxide, yttrium oxide, yttria-stabilized zirconia (YSZ). Also, tempered glass may be used for the substrate 296. The tempered glass is subjected to physical or chemical treatment by an ion exchange method, an air-cooling strengthening method, etc., and a compressive stress is applied to its surface. It can be used. By providing the touch sensor on one side of the tempered glass and providing the opposite side on the outermost surface of, for example, an electronic device and using it as a touch surface, the thickness of the entire device can be reduced. It can be done.

[0139] As the touch sensor, for example, a capacitance-type touch sensor can be applied. As the capacitance method, there are a surface capacitance method, a projected capacitance method, etc. Also, as the projected capacitance method, there are a self-capacitance method, a mutual-capacitance method, etc. Using the mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible. Hereinafter, the case of applying a projected capacitance-type touch sensor will be described.

[0140] Note that it is not limited to this, and various sensors capable of detecting the approach or contact of a detected object such as a finger or a stylus can also be applied.

[0141] Here, wiring or the like constituting a touch sensor is formed on the outer surface of the second substrate 202 , and a so-called on-cell type touch panel configuration is shown, but it is not limited to this. For example, an attached type (out-cell type) touch panel or an in-cell type touch panel configuration may be applied. By using the configuration of an on-cell type or in-cell type touch panel, even if the function of the touch panel is added to the display panel, its thickness can be reduced.

[0142] The above is the description of the cross-sectional configuration example.

[0143] [Regarding each component] Hereinafter, each component shown above will be described.

[0144] [Substrate] For the substrate of the display device, a material having a flat surface can be used. For the substrate on the side where light is extracted from the light-emitting element, a material that transmits the light is used. For example, materials such as glass, quartz, ceramic, sapphire, and organic resin can be used. By using a thin substrate, the display device can be made lighter and thinner. Furthermore,

[0145] by using a substrate with a thickness that has flexibility, a flexible display device can be realized. As glass, for example, non-alkali glass, barium borosilicate glass, aluminoborosilicate glass, etc. can be used. As materials having flexibility and transparency to visible light, for example, glass with a thickness that has flexibility, polyethylene terephthalate (PET), polyethylene naphthalate

[0146]

[0147] ​​​​(PEN), and other polyester resins, polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyethersulfone (PES) resins, polyamide resins, cycloolefin resins, polystyrene resins, polyamideimide resins, polyvinyl chloride resins, polytetrafluoroethylene (PTFE) resins, etc. may be mentioned. In particular, it is preferable to use a material with a low coefficient of thermal expansion. For example, polyamideimide resins, polyimide resins, PET, etc. can be preferably used. Also, a substrate impregnated with an organic resin in glass fibers, or a substrate with an inorganic filler mixed in an organic resin to reduce the coefficient of thermal expansion can be used. A substrate using such a material is

[0148] light in weight, so a display device using this substrate can also be made lightweight. In addition, since the substrate on the side where light is not extracted does not necessarily have to have light transmittance, in addition to the substrates mentioned above, a metal substrate or the like can also be used. A metal substrate has high

[0149] thermal conductivity and can easily conduct heat to the entire sealing substrate, so it can suppress local temperature rise of the display device, which is preferable.

[0150] Also, a substrate subjected to insulation treatment by oxidizing the surface of the metal substrate or forming an insulating film on the surface may be used. For example, an insulating film may be formed using a coating method such as spin In addition to leaving it as it is or heating it, an oxide film may be formed on the surface of the substrate by an anodization method or the like. This may be the case.

[0151] On a flexible substrate, a hard coat layer (for example, , a silicon nitride layer, etc.) that protects the surface of the display device from scratches, or a layer made of a material that can disperse pressure (for example, an aramid resin layer, etc.) etc. may be laminated. Further, in order to suppress a decrease in the life of the light-emitting element due to moisture or the like , a low-permeability insulating film may be laminated on the flexible substrate. For example, inorganic insulating materials such as silicon nitride, silicon oxynitride, aluminum oxide, and aluminum nitride can be used. This may be the case.

[0152] The substrate can also be used by laminating a plurality of layers. In particular, by adopting a configuration having a glass layer, the barrier properties against water and oxygen can be improved, and a highly reliable display device can be obtained. For example, a substrate in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closer to the light-emitting element can be used. By providing such an organic resin layer, cracks and fractures in the glass layer can be suppressed, and the mechanical strength can be improved. By applying such a composite material of a glass material and an organic resin to the substrate, a highly reliable flexible display device can be obtained.

[0153] 〔Transistor〕 The transistor included in the display device has a conductive layer that functions as a gate electrode, a conductive layer that functions as a back gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer.

[0154] ​​​That is, the transistor included in the display device according to one embodiment of the present invention has a structure in which gate electrodes are provided above and below the channel.

[0155] The crystallinity of the semiconductor material used for the transistor is not particularly limited, and any of amorphous semiconductors, semiconductors having crystallinity (microcrystalline semiconductors, polycrystalline semiconductors, single crystal semiconductors, or semiconductors having a partially crystalline region) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0156] In addition, as the semiconductor material used for the transistor, for example, an oxide semiconductor can be used for the semiconductor layer. In particular, it is preferable to apply an oxide semiconductor having a larger bandgap than silicon. Using a semiconductor material having a wider bandgap and a smaller carrier density than silicon is preferable because the current in the off state of the transistor can be reduced.

[0157] For example, as the oxide semiconductor, it is preferable to contain at least indium (In) or zinc (Zn). More preferably, it contains an oxide represented by In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or Hf).

[0158] In particular, as the semiconductor layer, it is preferable to use an oxide semiconductor layer having a plurality of crystal parts, the crystal parts having their c axes oriented substantially perpendicular to the surface to be formed of the semiconductor layer or the upper surface of the semiconductor layer, and no grain boundaries being observed between adjacent crystal parts.

[0159] Since such an oxide semiconductor has no crystal grain boundaries, when the display panel is curved, ​​​​​​​​The occurrence of cracks in the oxide semiconductor layer due to stress is suppressed. Therefore, such an oxide semiconductor can be suitably used for a display device having flexibility and used in a curved state.

[0160] In addition, by using such an oxide semiconductor having crystallinity as the semiconductor layer, fluctuations in electrical characteristics can be suppressed, and a highly reliable transistor can be realized.

[0161] In addition, a transistor using an oxide semiconductor having a larger bandgap than silicon can hold the charge accumulated in the capacitor connected in series with the transistor for a long time due to its low off-current. By applying such a transistor to a pixel, it is also possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, a display device with extremely low power consumption can be realized. Alternatively, it is also possible to switch between a driving mode operating at a normal frame frequency and a driving mode operating at a low frame frequency. In the driving mode operating at a low frame frequency, once the image data is written, and then the interval until the next image data is written is extended, so that the power consumption required for writing the image data during that period can be reduced.

[0162] 〔Conductive layer〕 As materials that can be used for the conductive layers such as the gates, sources, and drains of transistors, as well as various wirings and electrodes constituting the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys having these as the main components can be mentioned. Also, these ​​​The film containing the material can be used as a single layer or in a laminated structure. For example, silicon A single-layer structure of an aluminum film containing, a two-layer structure in which an aluminum film is laminated on a titanium film, tan A two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy A two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, tungsten A two-layer structure in which a copper film is laminated on a film, a titanium film or a titanium nitride film, and an aluminum A three-layer structure in which a film or a copper film is laminated thereon, and a titanium film or a titanium nitride film is further formed thereon A molybdenum film or a molybdenum nitride film, and an aluminum film or A three-layer structure in which a copper film is laminated thereon, and a molybdenum film or a molybdenum nitride film is further formed thereon There are etc. In addition, oxides such as indium oxide, tin oxide, or zinc oxide may be used. Also When using copper containing manganese, it is preferable because the controllability of the shape by etching is enhanced .

[0163] In addition, as a light-transmitting material that can be used for conductive layers such as various wirings and electrodes constituting the display device Conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide Zinc oxide, zinc oxide added with gallium, or graphene can be used Or, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium Molybdenum, iron, cobalt, copper, palladium, or titanium, and alloy materials containing the metal Materials can be used. Or, nitrides of the metal materials (for example, nitride Titanium) etc. may be used. In addition, when using metal materials, alloy materials (or their nitrides) It suffices to make it thin enough to have light-transmitting properties. Also, the laminated film of the above materials is used as a conductive layer It can be used, for example, an alloy of silver and magnesium and indium tin oxide A laminated film or the like is preferable because the conductivity can be increased.

[0164] 〔Insulating layer〕 Examples of the insulating material that can be used for each insulating layer, overcoat, spacer, etc. include Resins such as acrylic and epoxy, resins having a siloxane bond such as silicone resin In addition, inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide can also be used.

[0165] The light-emitting element is preferably provided between a pair of insulating films with low water permeability. This can suppress the intrusion of impurities such as water into the light-emitting element and suppress a decrease in the reliability of the device.

[0166] Examples of the insulating film with low water permeability include films containing nitrogen and silicon such as a silicon nitride film and a silicon oxynitride film, and films containing nitrogen and aluminum such as an aluminum nitride film. Also, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, etc. may be used.

[0167] For example, the water vapor transmission rate of the insulating film with low water permeability is 1×10 -5 [g / (m 2 ·day) or less, preferably 1×10 -6 [g / (m 2 ·day)] or less, more preferably 1×1 0 -7 [g / (m 2 ·day)] or less, still more preferably 1×10 -8 [g / (m 2 ·d ay)] or less.

[0168] 〔Adhesive layer, encapsulant〕​​ As the subsequent layer and the sealing material, various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, anaerobic adhesives, etc. can be used. These adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, etc. In particular, materials with low moisture permeability such as epoxy resins are preferred. Also, a two-component mixed resin may be used. Also, an adhesive sheet or the like may be used.

[0169] Further, the above resin may contain a desiccant. For example, substances that adsorb moisture by chemical adsorption, such as oxides of alkaline earth metals (calcium oxide, barium oxide, etc.), can be used. Or substances that adsorb moisture by physical adsorption, such as zeolite and silica gel, may be used. When a desiccant is contained, it is possible to suppress the intrusion of impurities such as moisture into the functional element, which is preferable because the reliability of the display panel is improved.

[0170] Further, by mixing a filler with a high refractive index or a light scattering member into the above resin, the light extraction efficiency from the light emitting element can be improved. For example, titanium oxide, barium oxide, zeolite, zirconium, etc. can be used.

[0171] 〔Light Emitting Element〕 As the light emitting element, an element capable of self-luminescence can be used, and elements whose luminance is controlled by current or voltage are included in that category. For example, light emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc. can be used.

[0172] ​​​​​​​​ The light-emitting element may be any of a top emission type, a bottom emission type, and a dual emission type. For the electrode on the side where light is extracted, a conductive film that transmits visible light is used. For the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0173] The EL layer has at least a light-emitting layer. As layers other than the light-emitting layer, the EL layer may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and high hole transport property).

[0174] Either a low molecular weight compound or a high molecular weight compound can be used for the EL layer, and it may contain an inorganic compound. The layers constituting the EL layer can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer method, printing method, inkjet method, coating method, etc.

[0175] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and the anode, holes are injected from the anode side and electrons are injected from the cathode side into the EL layer. The injected electrons and holes recombine in the EL layer, and the light-emitting substance contained in the EL layer emits light.

[0176] When applying a white light-emitting element as the light-emitting element, it is preferable to adopt a configuration in which the EL layer contains two or more light-emitting substances. For example, white light can be obtained by selecting light-emitting substances such that the emissions of each of the two or more light-emitting substances are complementary colors. For example, light-emitting substances that emit light such as R (red), G (green), B (blue), Y (yellow), O (orange), etc. Among light-emitting substances that exhibit light emission including spectral components of two or more of R, G, and B, it is preferable to include two or more. Further, the spectrum of light emission from the light-emitting element has two or more peaks within the visible light region in the wavelength range (for example, 350 nm or more and 750 nm or less). It is preferable to apply a light-emitting element having such characteristics. Also, the emission spectrum of a material having a peak in the yellow wavelength region is preferably a material having spectral components also in the green and red wavelength regions .

[0177] The EL layer preferably has a structure in which a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color are laminated. For example, the plurality of light-emitting layers in the EL layer may be laminated in contact with each other, or may be laminated via a region that does not contain any light-emitting material. For example, between a fluorescent light-emitting layer and a phosphorescent light-emitting layer, a region that contains the same material (for example, a host material, an assist material) as that of the fluorescent light-emitting layer or the phosphorescent light-emitting layer and does not contain any light-emitting material may be provided. Thereby, the production of the light-emitting element becomes easy , and the driving voltage is reduced.

[0178] Further, the light-emitting element may be a single element having one EL layer, or may be a tandem element in which a plurality of EL layers are laminated via a charge generation layer.

[0179] As the conductive film that transmits visible light, for example, indium oxide, indium tin oxide (ITO: Indium Tin Oxide), indium zinc oxide, zinc oxide, zinc oxide added with gallium, etc. can be used. Also, gold, silver, platinum, magnesium, nickel , tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium ​ Metal materials such as indium, alloys containing these metal materials, or nitrides of these metal materials (for example, titanium nitride) can also be used by forming them thinly enough to have translucency. Also, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and ITO is preferable because it can enhance conductivity. Also, graphene etc. may be used.

[0180] Conductive films that reflect visible light can be made of, for example, metal materials such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or alloys containing these metal materials. Also, lanthanum, neodymium, or germanium etc. may be added to the above metal materials or alloys. Also, alloys containing aluminum such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, an alloy of aluminum and neodymium (aluminum alloy), or alloys containing silver such as an alloy of silver and copper, an alloy of silver, palladium, and copper, an alloy of silver and magnesium can be used. Alloys containing silver and copper are preferable because of their high heat resistance. Furthermore, by laminating a metal film or an oxide semiconductor film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal film and the oxide semiconductor film include titanium, titanium oxide, etc. Also, a film composed of a conductive film that transmits visible light and a metal material may be laminated. For example, a laminated film of silver and ITO, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0181] The conductive layers can be formed using, respectively, vapor deposition methods or sputtering methods. In addition, It can be formed by using a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method. It can be formed.

[0182] In addition, the above-described light-emitting layer, as well as substances with high hole injection properties, substances with high hole transport properties, electrons substances with high transport properties, and substances with high electron injection properties, layers containing bipolar substances, etc. are each may have an inorganic compound such as a quantum dot or a polymer compound (oligomer, dendrimer, polymer, etc.). For example, by using a quantum dot in the light-emitting layer, it can also function as a light-emitting material. It can also function as a light-emitting material. It can also function as a light-emitting material.

[0183] In addition, as the quantum dot material, a colloidal quantum dot material, an alloy-type quantum dot material, a core-shell type quantum dot material, a core-type quantum dot material, etc. can be used. Also, materials containing element groups of Group 12 and Group 16, Group 13 and Group 15, or Group 14 and Group 16 can be used. Alternatively, a quantum dot material containing elements such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, aluminum, etc. can be used.

[0184] 〔Coloring layer〕 Examples of materials that can be used for the coloring layer include resin materials containing a metal material, a resin material, a pigment, or a dye. Examples of materials that can be used for the coloring layer include resin materials containing a metal material, a resin material, a pigment, or a dye.

[0185] 〔Light-shielding layer〕 Examples of materials that can be used for the light-shielding layer include carbon black, an oxide semiconductor, a composite oxide containing a solid solution of a plurality of oxide semiconductors, etc. Also, a laminated film of a film containing the material of the coloring layer can be used for the light-shielding layer. For example, a laminated structure of a film containing the material used for a coloring layer that transmits light of a certain color and a film containing the material used for a coloring layer that transmits light of another color is used. oxide semiconductors, etc. Also, a laminated film of a film containing the material of the coloring layer can be used for the light-shielding layer. For example, a laminated structure of a film containing the material used for a coloring layer that transmits light of a certain color and a film containing the material used for a coloring layer that transmits light of another color is used. oxide semiconductors, etc. Also, a laminated film of a film containing the material of the coloring layer can be used for the light-shielding layer. For example, a laminated structure of a film containing the material used for a coloring layer that transmits light of a certain color and a film containing the material used for a coloring layer that transmits light of another color is used. This is possible. By sharing the materials for the coloring layer and the light-shielding layer, not only can the device be shared, but the process can also be simplified, which is preferable.

[0186] [Connection Layer] For the connection layer that connects the FPC or IC to the terminals, an anisotropic conductive film (ACF: Anis otropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used. This is possible.

[0187] The above is the description of each component.

[0188] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification. This is possible.

[0189] (Embodiment 3) In this embodiment, an example of a method for manufacturing a display device using a flexible substrate will be described. This is possible.

[0190] Here, the layers including display elements, circuits, wirings, electrodes, and insulating layers, as well as optical members such as coloring layers and light-shielding layers, will be collectively referred to as the element layer. For example, the element layer includes a light-emitting element, and in addition to the light-emitting element, it may include wirings electrically connected to the light-emitting element, elements such as transistors used for pixels and circuits. This is possible. This is possible. This is possible.

[0191] Also, here, at the stage when the light-emitting element is completed (the manufacturing process is finished), the member that supports the element layer and has flexibility will be referred to as the substrate. For example, the substrate includes extremely thin films with a thickness of 10 nm or more and 300 μm or less. This is possible. This is possible.

[0192] As a method of forming an element layer on a substrate having flexibility and an insulating surface, typically there are the following two methods. One is a method of directly forming an element layer on a flexible substrate The other is a method of forming an element layer on a support substrate different from the flexible substrate and then peeling the element layer from the support substrate and transferring the element layer to the substrate. Here, although not described in detail, in addition to the above two methods, an element layer is formed on a substrate having no flexibility and the substrate is made flexible by thinning it by polishing or the like.

[0193] When the material constituting the substrate has heat resistance against the heat applied in the element layer formation process it is preferable to directly form the element layer on the substrate because the process is simplified. At this time, when forming the element layer with the substrate fixed to the support substrate, transportation within the apparatus and between apparatuses becomes easy, which is preferable.

[0194] Also, when using the method of transferring to the substrate after forming the element layer on the support substrate, first, a release layer and an insulating layer are laminated on the support substrate, and the element layer is formed on the insulating layer. Subsequently, peeling is performed between the support substrate and the element layer, and the element layer is transferred to the substrate. At this time, the interface between the support substrate and the release layer, the interface between the release layer and the insulating layer, or a material in which peeling occurs in the release layer may be selected. In this method, by using a material with high heat resistance for the support substrate and the release layer, the upper limit of the temperature applied when forming the element layer can be increased, and an element layer with a more reliable element can be formed, which is preferable.

[0195] For example, as the release layer, a layer containing a high melting point metal material such as tungsten and the A layer containing an oxide is laminated and used. Also, as the insulating layer on the release layer, a layer in which a plurality of silicon oxides, silicon nitrides, silicon oxynitrides, silicon nitride oxides, etc. are laminated is preferably used. In the present specification, oxynitride refers to a material having a higher oxygen content than nitrogen in its composition, and nitride oxide refers to a material having a higher nitrogen content than oxygen in its composition. Preferably, a layer in which a plurality of silicon oxides, silicon nitrides, silicon oxynitrides, silicon nitride oxides, etc. are laminated is used. In the present specification, oxynitride refers to a material having a higher oxygen content than nitrogen in its composition, and nitride oxide refers to a material having a higher nitrogen content than oxygen in its composition. In the present specification, oxynitride refers to a material having a higher oxygen content than nitrogen in its composition, and nitride oxide refers to a material having a higher nitrogen content than oxygen in its composition.

[0196] As a method for peeling the element layer from the support substrate, applying mechanical force, etching the release layer, or infiltrating a liquid into the peeling interface can be cited as an example. Or, peeling may be performed by heating or cooling by utilizing the difference in thermal expansion between the two layers forming the peeling interface. As a method for peeling the element layer from the support substrate, applying mechanical force, etching the release layer, or infiltrating a liquid into the peeling interface can be cited as an example. Or, peeling may be performed by heating or cooling by utilizing the difference in thermal expansion between the two layers forming the peeling interface. As a method for peeling the element layer from the support substrate, applying mechanical force, etching the release layer, or infiltrating a liquid into the peeling interface can be cited as an example. Or, peeling may be performed by heating or cooling by utilizing the difference in thermal expansion between the two layers forming the peeling interface.

[0197] When starting peeling, it is preferable to first form a starting point of peeling and progress the peeling from the starting point. The starting point of peeling can be formed by locally heating a part of the insulating layer or the release layer with a laser beam or the like, or by physically cutting or penetrating a part of the insulating layer or the release layer with a sharp member. When starting peeling, it is preferable to first form a starting point of peeling and progress the peeling from the starting point. The starting point of peeling can be formed by locally heating a part of the insulating layer or the release layer with a laser beam or the like, or by physically cutting or penetrating a part of the insulating layer or the release layer with a sharp member. When starting peeling, it is preferable to first form a starting point of peeling and progress the peeling from the starting point. The starting point of peeling can be formed by locally heating a part of the insulating layer or the release layer with a laser beam or the like, or by physically cutting or penetrating a part of the insulating layer or the release layer with a sharp member.

[0198] Also, when peeling is possible at the interface between the support substrate and the insulating layer, the release layer may not be provided.

[0199] For example, by using glass as the support substrate and an organic resin such as polyimide as the insulating layer, peeling can be performed at the interface between the glass and the organic resin. Also, the remaining organic resin such as polyimide can be used as a substrate. For example, by using glass as the support substrate and an organic resin such as polyimide as the insulating layer, peeling can be performed at the interface between the glass and the organic resin. Also, the remaining organic resin such as polyimide can be used as a substrate.

[0200] Or, a heat - generating layer is provided between the support substrate and the insulating layer made of an organic resin, and the heat - generating layer is heated. ​​​​By doing so, peeling may be performed at the interface between the heat generating layer and the insulating layer. As the heat generating layer, various materials can be used, such as a material that generates heat by passing an electric current, a material that generates heat by absorbing light, and a material that generates heat by applying a magnetic field. For example, as the heat generating layer, it can be selected and used from semiconductors, metals, and insulators. A material that generates heat by passing an electric current, a material that generates heat by absorbing light, a material that generates heat by applying a magnetic field, etc. Various materials can be used. For example, as the heat generating layer, it can be selected and used from semiconductors, metals, and insulators.

[0201] Hereinafter, an example of a more specific manufacturing method will be described. By changing the layer formed as the layer to be peeled in the manufacturing method described below, a flexible input / output device according to one aspect of the present invention can also be manufactured.

[0202] First, an island-shaped peeling layer 303 is formed on the manufacturing substrate 301, and a layer to be peeled 305 is formed on the peeling layer 303 (FIG. 17(A)). Separately from this, an island-shaped peeling layer 323 is formed on the manufacturing substrate 321, and a layer to be peeled 325 is formed on the peeling layer 323 (FIG. 17(B)).

[0203] Here, an example of forming an island-shaped peeling layer is shown, but it is not limited to this. In this step, when peeling the layer to be peeled from the manufacturing substrate, a material is selected such that peeling occurs at the interface between the manufacturing substrate and the peeling layer, the interface between the peeling layer and the layer to be peeled, or within the peeling layer. In the present embodiment, a case where peeling occurs at the interface between the layer to be peeled and the peeling layer is exemplified, but it is not limited to this depending on the combination of materials used for the peeling layer and the layer to be peeled. When the layer to be peeled has a laminated structure, the layer in contact with the peeling layer is particularly referred to as the first layer.

[0204] For example, when the peeling layer has a laminated structure of a tungsten film and a tungsten oxide film, peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, so that the layer to be peeled A part of the release layer (here, a tungsten oxide film) may remain on the separation layer side. Also, on the layer to be peeled side the remaining release layer may be removed later.

[0205] For example, when the release layer has a laminated structure of a tungsten film and a tungsten oxide film, peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, so that a part of the release layer (here, a tungsten oxide film) may remain on the layer to be peeled side. Also, on the layer to be peeled side the remaining release layer may be removed later. A part of the release layer (here, a tungsten oxide film) may remain on the separation layer side. Also, on the layer to be peeled side the remaining release layer may be removed later.

[0206] For the production substrate, a substrate having heat resistance capable of withstanding at least the processing temperature during the production process is used. As the production substrate, for example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, a resin substrate, a plastic substrate, etc. can be used. When using a glass substrate for the production substrate, it is preferable to form an insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film as an underlayer film between the production substrate and the release layer to prevent contamination from the glass substrate.

[0207] When using a glass substrate for the production substrate, it is preferable to form an insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film as an underlayer film between the production substrate and the release layer to prevent contamination from the glass substrate. When using a glass substrate for the production substrate, it is preferable to form an insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film as an underlayer film between the production substrate and the release layer to prevent contamination from the glass substrate. When using a glass substrate for the production substrate, it is preferable to form an insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film as an underlayer film between the production substrate and the release layer to prevent contamination from the glass substrate.

[0208] The release layer can be formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. The release layer can be formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. The release layer can be formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. The release layer can be formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. The release layer can be formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. The release layer can be formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. A compound semiconductor may be used. For the release layer, a high melting point metal material such as tungsten, titanium, molybdenum, etc. is preferably used because it increases the degree of freedom in the formation process of the layer to be released.

[0209] The release layer can be formed, for example, by sputtering, plasma CVD, coating methods (including spin coating, droplet discharge method, dispensing method, etc.), printing methods, etc. The thickness of the release layer is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less.

[0210] When the release layer has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

[0211] In addition, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer, by forming a layer containing tungsten and then forming an insulating film formed of an oxide on the upper layer, the layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. It may also be utilized. Also, the surface of the layer containing tungsten may be subjected to heat oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, plasma treatment and heat treatment are carried out with oxygen, nitrogen, nitrous oxide alone, or a mixture of the gas and other gases It may be performed in an inert gas atmosphere. By the above plasma treatment or heat treatment, the surface state of the release layer is changed, and it is possible to control the adhesion between the release layer and the insulating film formed later. There is.

[0212] In addition, when peeling is possible at the interface between the production substrate and the layer to be peeled, the release layer may not be provided. For example, glass is used as the production substrate, and an organic resin such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic is formed in contact with the glass. Next , by performing laser irradiation or heat treatment, the adhesion between the production substrate and the organic resin is improved. Then , an insulating film, a transistor, etc. are formed on the organic resin. After that, laser irradiation is performed at an energy density higher than that of the previous laser irradiation, or heat treatment is performed at a temperature higher than that of the previous heat treatment. By doing so, peeling can be achieved at the interface between the production substrate and the organic resin. Also, at the time of peeling, a liquid may be infiltrated into the interface between the production substrate and the organic resin for separation. In this method, since an insulating film, a transistor, etc. are formed on an organic resin with low heat resistance, a high temperature cannot be applied to the substrate in the manufacturing process. Here, a transistor using an oxide semiconductor does not require a high-temperature manufacturing process, so it can be suitably formed on an organic resin.

[0213] In this method, since an insulating film, a transistor, etc. are formed on an organic resin with low heat resistance, a high temperature cannot be applied to the substrate in the manufacturing process. Here, a transistor using an oxide semiconductor does not require a high-temperature manufacturing process, so it can be suitably formed on an organic resin. is not essential for a high-temperature manufacturing process, so it can be suitably formed on an organic resin.

[0214] In addition, the organic resin may be used as the substrate constituting the device, or the organic resin may be removed , and another substrate may be bonded to the exposed surface of the layer to be peeled using an adhesive. Also, another substrate (support film) may be bonded to the organic resin using an adhesive. In addition, another substrate (support film) may be bonded to the organic resin using an adhesive.

[0215] Alternatively, a metal layer is provided between the production substrate and the organic resin, and a current is passed through the metal layer to cause the metal The layer may be heated and peeled at the interface between the metal layer and the organic resin.

[0216] The insulating layer (first layer) formed in contact with the release layer is formed of a single layer or multiple layers using a silicon nitride film, a silicon oxynitride film , a silicon oxide film, a silicon nitride oxide film, etc., and it is preferable. Note that it is not limited to this, and an optimal material can be selected according to the material used for the release layer.

[0217] The insulating layer can be formed using a sputtering method, a plasma CVD method, a coating method, a printing method, etc. For example, by forming the film by the plasma CVD method at a film formation temperature of 250 °C or higher and 400 °C or lower, a dense and highly moisture-proof film can be obtained. Note that the thickness of the insulating layer is preferably 10 nm or more and 3000 nm or less, and more preferably 200 nm or more and 1500 nm or less.

[0218] Next, the production substrate 301 and the production substrate 321 are bonded together using the adhesive layer 307 so that the surfaces on which the respective release layers are formed face each other, and the adhesive layer 307 is cured (FIG. 17( C)).

[0219] Note that it is preferable to bond the production substrate 301 and the production substrate 321 in a reduced-pressure atmosphere.

[0220] Note that in FIG. 17(C), a case where the sizes of the release layer 303 and the release layer 323 are different is shown, but as shown in FIG. 17(D), release layers of the same size may be used.

[0221] The adhesive layer 307 is arranged so as to overlap with the release layer 303, the layer to be released 305, the layer to be released 325, and the release layer 323. And the end of the adhesive layer 307 is the release layer 303 or the release layer 323 ​​​​​​It is preferably located inside at least one (the one to be peeled off first) of the ends. Thus, it is possible to suppress strong adhesion between the production substrate 301 and the production substrate 321, and it is possible to suppress a decrease in the yield of the subsequent peeling process.

[0222] For the adhesive layer 307, for example, various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, heat curable adhesives, anaerobic adhesives, etc. can be used. These adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimides, mid resins, imide resins, PVC resins, PVB resins, EVA resins, etc. In particular, materials with low moisture permeability such as epoxy resins are preferred. As the adhesive, it is preferable to use a material with low fluidity so that it can be arranged only in a desired region. For example, an adhesive sheet, a pressure-sensitive adhesive sheet, or a sheet-like or film-like adhesive may be used. For example, an OCA (optica l clear adhesive) film can be preferably used.

[0223] The adhesive may have adhesiveness before bonding, or may develop adhesiveness by heating or light irradiation after bonding.

[0224] In addition, the above resin may contain a desiccant. For example, substances that adsorb moisture by chemical adsorption, such as oxides of alkaline earth metals (such as calcium oxide and barium oxide), can be used. Or, substances that adsorb moisture by physical adsorption, such as zeolite and silica gel, may be used. If a desiccant is included, it is preferable because it can suppress deterioration of the functional elements due to intrusion of moisture in the air and improve the reliability of the device.

[0225] Next, by irradiating with a laser beam, a starting point for peeling is formed (Figs. 18(A) and (B)).

[0226] Either the production substrate 301 or the production substrate 321 may be peeled off. When the sizes of the peeling layers are different, it may be peeled off from the substrate on which the larger peeling layer is formed, or it may be peeled off from the substrate on which the smaller peeling layer is formed. When elements such as semiconductor elements and light-emitting elements are fabricated only on one of the substrates, it may be peeled off from the substrate on which the elements are formed, or it may be peeled off from the other substrate. Here, an example in which the production substrate 301 is peeled off first is shown.

[0227] The laser beam is irradiated onto the region where the cured adhesive layer 307, the layer to be peeled 305, and the peeling layer 303 overlap (see arrow P1 in Fig. 18(A)).

[0228] By removing a part of the first layer, a starting point for peeling can be formed (see the region surrounded by the dotted line in Fig. 18(B)). At this time, not only the first layer but also other layers of the layer to be peeled 305 and a part of the peeling layer 303 and the adhesive layer 307 may be removed.

[0229] The laser beam is preferably irradiated from the substrate side on which the peeling layer to be peeled is provided. When irradiating the laser beam onto the region where the peeling layer 303 and the peeling layer 323 overlap, by cracking only the layer to be peeled 305 among the layer to be peeled 305 and the layer to be peeled 325, the production substrate 301 and the peeling layer 303 can be selectively peeled off (see the region surrounded by the dotted line in Fig. 18(B). Here, an example of removing a part of each layer constituting the layer to be peeled 305 is shown.).

[0230] Then, starting from the formed starting point for peeling, the layer to be peeled 305 and the production substrate 301 are separated (Fig...) ​​​​​​​​​​​18(C)(D)). Thus, the layer to be peeled 305 can be transferred from the production substrate 301 to the production substrate 321.

[0231] For example, starting from the peeling origin, a physical force (such as a process of peeling off with human hands or a jig, or a process of separating while rotating a roller, etc.) can be used to separate the layer to be peeled 305 from the production substrate 301.

[0232] Alternatively, a liquid such as water can be infiltrated into the interface between the peeling layer 303 and the layer to be peeled 305 to separate the production substrate 301 from the layer to be peeled 305. The liquid can easily penetrate between the peeling layer 303 and the layer to be peeled 305 due to capillary action, enabling easy separation. Also, the static electricity generated during peeling can be suppressed from having an adverse effect on the functional elements contained in the layer to be peeled 305 (such as the semiconductor element being damaged by static electricity).

[0233] Next, the exposed layer to be peeled 305 and the substrate 331 are bonded together using the adhesive layer 333, and the adhesive layer 333 is cured (Fig. 19(A)).

[0234] Note that it is preferable to bond the layer to be peeled 305 and the substrate 331 in a reduced-pressure atmosphere.

[0235] Next, a peeling origin is formed by irradiating with a laser beam (Fig. 19(B)(C)).

[0236] The laser beam is irradiated onto the region where the cured adhesive layer 333, the layer to be peeled 325, and the peeling layer 323 overlap (see arrow P2 in Fig. 19(B)). By removing a part of the first layer, a peeling origin can be formed (see the region enclosed by the dotted line in Fig. 19(C). Here, an example of removing a part of each layer constituting the layer to be peeled 325 is shown.). At this time, not only the first layer but also ​​​​​​​​​​​​ Other layers of the layer to be peeled 325, or parts of the peeling layer 323 and adhesive layer 333 may be removed.

[0237] It is preferable that the laser light is irradiated from the formation substrate 321 side on which the peeling layer 323 is provided. .

[0238] Then, the layer to be peeled 325 and the preparation substrate 321 are separated from each other from the formed peel starting point (FIG. 19(D)). As a result, the layer to be peeled 305 and the layer to be peeled 325 are transferred to the substrate 331. It is possible.

[0239] Thereafter, a substrate may be further attached to the layer 325 to be peeled.

[0240] The exposed peeled layer 325 and the substrate 341 are bonded together with an adhesive layer 343. 43 is cured (FIG. 20(A)). In this step, an opening is provided in advance in the substrate 341. The following shows an example of this.

[0241] In this manner, the layer to be peeled off can be sandwiched between the pair of flexible substrates.

[0242] Thereafter, as shown in FIG. 20(B), unnecessary ends of the substrates 331 and 341 are cut off. At this time, the end portions of the layer to be peeled 305 and the layer to be peeled 325 may be removed at the same time. It may be cut.

[0243] By the above method, a flexible device can be manufactured. By using the configuration exemplified in the above embodiment, a display device having flexibility can be manufactured. can.

[0244] In the above-described method for manufacturing a light-emitting device according to one embodiment of the present invention, After bonding a pair of production substrates provided with [the relevant structure], a starting point for peeling is formed by irradiating with laser light. Then, after making each peeling layer and the layer to be peeled in a state where they can be easily peeled, peeling is performed. By this method, the yield of the peeling process can be improved.

[0245] Also, after preliminarily bonding a pair of production substrates each having a layer to be peeled, peeling is performed, and the substrate constituting the device to be produced can be bonded to the layer to be peeled. Thus when bonding the layers to be peeled, production substrates with low flexibility can be bonded to each other, and the alignment accuracy of the bonding can be improved compared to when bonding flexible substrates to each other.

[0246] Note that, as shown in Fig. 21(A), it is preferable that the end of the region 351 where the layer 305 to be peeled is peeled is located inside the end of the peeling layer 303. By this, the yield of the peeling process can be increased. Also, when there are a plurality of regions 351, as shown in Fig. 21(B), a peeling layer 303 may be provided for each region 351, or as shown in Fig. 21(C), a plurality of regions 351 may be provided on one peeling layer 303.

[0247] The above is the description of the method for manufacturing a flexible display device.

[0248] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

[0249] (Embodiment 4) In this embodiment, an example of an electronic device to which the display device according to one aspect of the present invention can be applied will be described.

[0250] Using the display device according to one aspect of the present invention, an electronic device or a lighting device can be manufactured. By using the display device according to one aspect of the present invention, an electronic device or a lighting device having a large capacity can be obtained even in a small area. By using the display device according to one aspect of the present invention, an electronic device or a lighting device having a large capacity can be obtained even when performing gradation display while maintaining a low voltage. Using the display device according to one aspect of the present invention, an electronic device or a lighting device having a large capacity can be obtained even in a small area. Using the display device according to one aspect of the present invention, an electronic device or a lighting device having a large capacity can be obtained even when performing gradation display while maintaining a low voltage. Using the display device according to one aspect of the present invention, an electronic device or a lighting device having a large capacity can be obtained even when performing gradation display while maintaining a low voltage. can be manufactured.

[0251] Examples of the electronic device include a television device, a desktop or notebook personal computer, a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproduction device, and a large game machine such as a pachinko machine. Examples of the electronic device include a television device, a desktop or notebook personal computer, a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproduction device, and a large game machine such as a pachinko machine. Examples of the electronic device include a television device, a desktop or notebook personal computer, a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproduction device, and a large game machine such as a pachinko machine. Examples of the electronic device include a television device, a desktop or notebook personal computer, a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproduction device, and a large game machine such as a pachinko machine.

[0252] The electronic device or the lighting device according to one aspect of the present invention can be incorporated along the inner wall or the outer wall of a house or a building, or along the curved surface of the interior or the exterior of an automobile. The electronic device or the lighting device according to one aspect of the present invention can be incorporated along the inner wall or the outer wall of a house or a building, or along the curved surface of the interior or the exterior of an automobile.

[0253] The electronic device according to one aspect of the present invention may have a secondary battery, and it is preferable that the secondary battery can be charged by using non-contact power transmission. The electronic device according to one aspect of the present invention may have a secondary battery, and it is preferable that the secondary battery can be charged by using non-contact power transmission.

[0254] Examples of the secondary battery include lithium ion secondary batteries such as lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte, nickel metal hydride batteries, nickel cadmium batteries, organic radical batteries, lead storage batteries, air secondary batteries, nickel zinc batteries, silver zinc batteries, and the like. Examples of the secondary battery include lithium ion secondary batteries such as lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte, nickel metal hydride batteries, nickel cadmium batteries, organic radical batteries, lead storage batteries, air secondary batteries, nickel zinc batteries, silver zinc batteries, and the like. Examples of the secondary battery include lithium ion secondary batteries such as lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte, nickel metal hydride batteries, nickel cadmium batteries, organic radical batteries, lead storage batteries, air secondary batteries, nickel zinc batteries, silver zinc batteries, and the like. Examples of the secondary battery include lithium ion secondary batteries such as lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte, nickel metal hydride batteries, nickel cadmium batteries, organic radical batteries, lead storage batteries, air secondary batteries, nickel zinc batteries, silver zinc batteries, and the like.

[0255] The electronic device according to one aspect of the present invention may have an antenna. It is preferable to receive signals with the antenna. By doing so, the display unit can display images, information, etc. Also, when the electronic device has an antenna and a secondary battery, the antenna may be used for non-contact power transmission.

[0256] An electronic device according to one aspect of the present invention may include a sensor (capable of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation number, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power , radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays). It may have it.

[0257] An electronic device according to one aspect of the present invention can have various functions. For example, functions such as displaying various information (such as still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar , a function of displaying a date or time, etc., a function of executing various software (programs), a wireless communication function, a function of reading programs or data recorded on a recording medium can be included. It can have functions such as that.

[0258] Furthermore, in an electronic device having a plurality of display units, a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or a function of displaying a stereoscopic image by displaying an image considering parallax on a plurality of display units can be included. Furthermore, in an electronic device having an imaging unit, functions such as a function of shooting a still image or a moving image, a function of automatically or manually correcting the shot image, a function of saving the shot image to a recording medium (external or built-in to the electronic device), and a function of displaying the shot image on the display unit can be included. Note that the functions of an electronic device according to one aspect of the present invention are not limited to these, and it can have various functions . Note that the functions of an electronic device according to one aspect of the present invention are not limited to these, and it can have various functions .

[0259] An example of an electronic device having a curved display unit 7000 is shown in FIGS. 22(A), (B), (C), (D), and (E). The display unit 7000 is provided with a curved display surface, and can perform display along the curved display surface. Note that the display unit 7000 may have flexibility.

[0260] The display unit 7000 is manufactured using a display device or the like according to an aspect of the present invention. According to an aspect of the present invention, it is possible to provide an electronic device with reduced power consumption, a curved display unit, and high reliability.

[0261] Examples of mobile phones are shown in FIGS. 22(A) and (B). The mobile phone 7100 shown in FIG. 22(A) and the mobile phone 7110 shown in FIG. 22(B) each have a housing 7101, a display unit 7000, operation buttons 7103, an external connection port 7104, a speaker 7105, a microphone 7106, etc. The mobile phone 7110 shown in FIG. 22(B) further has a camera 7107.

[0262] Each mobile phone is provided with a touch sensor on the display unit 7000. Any operation such as making a call or inputting characters can be performed by touching the display unit 7000 with a finger or a stylus.

[0263] Also, by operating the operation buttons 7103, it is possible to turn the power on and off and switch the type of image displayed on the display unit 7000. For example, it is possible to switch from a mail creation screen to a main menu screen.

[0264] In addition, a detection device such as a gyro sensor or an acceleration sensor is provided inside the mobile phone. ​​​​​​​​Thus, it is possible to determine the orientation (portrait or landscape) of the mobile phone and dynamically switch the screen display orientation of the display unit 7000 automatically. Also, the switching of the screen display orientation can be performed by touching the display unit 7000, operating the operation button 7103, or using voice input with the microphone 7106, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc.

[0265] FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc. FIGS. 22(C) and (D) show an example of a portable information terminal. The portable information terminal 7200 shown in FIG. 22(C) and the portable information terminal 7210 shown in FIG. 22(D) each have a housing 7201 and a display unit 7000. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, or a battery, etc. The display unit 7000 is provided with a touch sensor. The operation of the portable information terminal can be performed by touching the display unit 7000 with a finger or a stylus, etc.

[0266] The portable information terminal exemplified in this embodiment has one or more functions selected from, for example, a telephone, a notebook, or an information browsing device, etc. Specifically, it can be used as a smartphone respectively. The portable information terminal exemplified in this embodiment can execute various applications such as, for example, a mobile phone, an email, text browsing and creation, music playback, Internet communication, and computer games. The portable information terminal exemplified in this embodiment has one or more functions selected from, for example, a telephone, a notebook, or an information browsing device, etc. Specifically, it can be used as a smartphone respectively. The portable information terminal exemplified in this embodiment can execute various applications such as, for example, a mobile phone, an email, text browsing and creation, music playback, Internet communication, and computer games. The portable information terminal exemplified in this embodiment has one or more functions selected from, for example, a telephone, a notebook, or an information browsing device, etc. Specifically, it can be used as a smartphone respectively. The portable information terminal exemplified in this embodiment can execute various applications such as, for example, a mobile phone, an email, text browsing and creation, music playback, Internet communication, and computer games. The portable information terminal exemplified in this embodiment has one or more functions selected from, for example, a telephone, a notebook, or an information browsing device, etc. Specifically, it can be used as a smartphone respectively. The portable information terminal exemplified in this embodiment can execute various applications such as, for example, a mobile phone, an email, text browsing and creation, music playback, Internet communication, and computer games. The portable information terminal exemplified in this embodiment has one or more functions selected from, for example, a telephone, a notebook, or an information browsing device, etc. Specifically, it can be used as a smartphone respectively. The portable information terminal exemplified in this embodiment can execute various applications such as, for example, a mobile phone, an email, text browsing and creation, music playback, Internet communication, and computer games.

[0267] The portable information terminal 7200 and the portable information terminal 7210 can display character and image information, etc. on their multiple surfaces. For example, as shown in FIGS. 22(C) and (D), three operation buttons 7202 can be displayed on one surface, and the information 7203 shown in a rectangle can be displayed on another surface. In FIG. 22(C), an example where information is displayed on the upper side of the portable information terminal is shown, and in FIG. 22(D) The portable information terminal 7200 and the portable information terminal 7210 can display character and image information, etc. on their multiple surfaces. For example, as shown in FIGS. 22(C) and (D), three operation buttons 7202 can be displayed on one surface, and the information 7203 shown in a rectangle can be displayed on another surface. In FIG. 22(C), an example where information is displayed on the upper side of the portable information terminal is shown, and in FIG. 22(D) The portable information terminal 7200 and the portable information terminal 7210 can display character and image information, etc. on their multiple surfaces. For example, as shown in FIGS. 22(C) and (D), three operation buttons 7202 can be displayed on one surface, and the information 7203 shown in a rectangle can be displayed on another surface. In FIG. 22(C), an example where information is displayed on the upper side of the portable information terminal is shown, and in FIG. 22(D) The portable information terminal 7200 and the portable information terminal 7210 can display character and image information, etc. on their multiple surfaces. For example, as shown in FIGS. 22(C) and (D), three operation buttons 7202 can be displayed on one surface, and the information 7203 shown in a rectangle can be displayed on another surface. In FIG. 22(C), an example where information is displayed on the upper side of the portable information terminal is shown, and in FIG. 22(D) Here, an example where information is displayed on the side of the mobile information terminal is shown. Also, information may be displayed on three or more sides of the mobile information terminal.

[0268] Note that examples of information include notifications from SNS (Social Networking Service), displays for notifying incoming calls such as e-mails and phone calls, the subject or sender name of e-mails, date and time, remaining battery level, antenna reception strength, and the like. Alternatively, operation buttons, icons, etc. may be displayed at the position where the information is displayed instead of the information.

[0269] For example, the user of the mobile information terminal 7200 can check the display (here, information 7203) while the mobile information terminal 7200 is stored in the breast pocket of the clothing.

[0270] Specifically, the phone number or name of the caller of the incoming call is displayed at a position where it can be observed from above the mobile information terminal 7200. The user can check the display without taking out the mobile information terminal 7200 from the pocket and determine whether to answer the call.

[0271] FIG. 22(E) shows an example of a television apparatus. The television apparatus 7300 has a display unit 7000 incorporated in a housing 7301. Here, a configuration in which the housing 7301 is supported by a stand 7303 is shown.

[0272] The operation of the television apparatus 7300 shown in FIG. 22(E) can be performed by operation switches provided in the housing 7301 or by a separate remote control operation unit 7311. Alternatively, the display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. ​​​​​​​​​This is also acceptable. The remote control operation unit 7311 may have a display unit for presenting information output from the remote control operation unit 7311. Operations such as channel and volume adjustment can be performed using the operation keys or touch panel provided on the remote control operation unit 7311, and the video displayed on the display unit 7000 can be manipulated.

[0273] Note that the television device 7300 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. Additionally, by connecting to a wired or wireless communication network via the modem, one-way (sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can also be achieved.

[0274] FIG. 22(F) shows an example of an illumination device having a curved light-emitting portion.

[0275] The light-emitting portion of the illumination device shown in FIG. 22(F) is fabricated using a display device or the like according to one aspect of the present invention. According to one aspect of the present invention, an illumination device with reduced power consumption, a curved light-emitting portion, and high reliability can be provided.

[0276] The light-emitting portion 7411 provided in the illumination device 7400 shown in FIG. 22(F) has a configuration in which two convexly curved light-emitting portions are symmetrically arranged. Therefore, the illumination device 7400 can illuminate the entire area around it.

[0277] Furthermore, the light-emitting portion provided in the illumination device 7400 may have flexibility. The light-emitting portion can be fixed with plastic members or members such as movable frames, and the light-emitting surface of the light-emitting portion can be freely curved according to the application.

[0278] ​​​​​​​​​​​​ The lighting device 7400 includes a base 7401 having an operation switch 7403, and a light emitting part supported by the base 7401.

[0279] Here, although a lighting device in which the light emitting part is supported by the base is exemplified, a housing having the light emitting part can also be used by fixing it to the ceiling or suspending it from the ceiling. Since the light emitting surface can be curved, it is possible to illuminate a specific area brightly by curving the light emitting surface in a concave shape, or to illuminate the entire room brightly by curving the light emitting surface in a convex shape.

[0280] From FIG. 23(A) to FIG. 23(I), an example of a portable information terminal having a flexible and bendable display unit 7001 is shown.

[0281] The display unit 7001 is manufactured using a display device or the like according to an aspect of the present invention. For example, a display device or the like that can be bent with a radius of curvature of 0.01 mm or more and 150 mm or less can be applied. Also, the display unit 7001 may include a touch sensor, and the portable information terminal can be operated by touching the display unit 7001 with a finger or the like. According to an aspect of the present invention, an electronic device having a flexible display unit and high reliability can be provided.

[0282] FIGS. 23(A) and (B) are perspective views showing an example of a portable information terminal. The portable information terminal 7500 has a housing 7501, a display unit 7001, a drawer member 7502, an operation button 7503, etc.

[0283] The portable information terminal 7500 has a flexible display unit 7001 wound in a roll shape inside the housing 7501. The display unit 7001 can be pulled out using the drawer member 7502. ​​​​​​​​​​

[0284] In addition, the mobile information terminal 7500 can receive a video signal by a built-in control unit, and can display the received video on the display unit 7001. Also, a battery is built into the mobile information terminal 7500. Further, the housing 7501 is provided with a terminal portion for connecting a connector, and it may be configured to directly supply a video signal and power from the outside by wire.

[0285] Also, by the operation button 7503, operations such as turning on and off the power and switching the displayed video can be performed. In FIGS. 23(A) and (B), an example of arranging the operation button 7503 on the side surface of the mobile information terminal 7500 is shown, but it is not limited thereto, and it may be arranged on the same surface (front surface) as the display surface of the mobile information terminal 7500 or on the back surface.

[0286] FIG. 23(B) shows the mobile information terminal 7500 with the display unit 7001 pulled out. In this state, a video can be displayed on the display unit 7001. Also, the mobile information terminal 7500 may be configured to perform different displays between the state of FIG. 23(A) where a part of the display unit 7001 is rolled up in a roll shape and the state of FIG. 23(B) where the display unit 7001 is pulled out. For example, when in the state of FIG. 23(A), the power consumption of the mobile information terminal 7500 can be reduced by making the rolled-up part of the display unit 7001 non-displayed.

[0287] Note that, in order to fix the display surface of the display unit 7001 to be flat when the display unit 7001 is pulled out, a frame for reinforcement may be provided on the side portion of the display unit 7001.

[0288] In addition to this configuration, a speaker may be provided in the housing, and the audio signal received together with the video signal ​​​​​​​​​​It may be configured to output such a voice.

[0289] From FIG. 23(C) to FIG. 23(E), an example of a foldable portable information terminal is shown. In FIG. 23(C), it is in the unfolded state, and in FIG. 23(D), it is in a state midway through changing from one of the unfolded state or the folded state to the other, and in FIG. 23(E), the folded portable information terminal 7600 is shown. The portable information terminal 7600 has excellent portability in the folded state and has excellent listability due to a wide display area without seams in the unfolded state.

[0290] The display unit 7001 is supported by three housings 7601 connected by a hinge 7602 and is. By bending between two housings 7601 via the hinge 7602, the portable information terminal 7600 can be reversibly deformed from the unfolded state to the folded state.

[0291] FIGS. 23(F) and (G) show an example of a foldable portable information terminal. In FIG. 23(F) it shows the folded state with the display unit 7001 on the inside, and in FIG. 23(G) it shows the portable information terminal 7650 in the folded state with the display unit 7001 on the outside. The portable information terminal 7650 has a display unit 7001 and a non-display unit 7651. When the portable information terminal 7650 is not in use, by folding it so that the display unit 7001 is on the inside, the dirt and damage of the display unit 7001 can be suppressed.

[0292] FIG. 23(H) shows an example of a flexible portable information terminal. The portable information terminal 7700 has a housing 7701 and a display unit 7001. Further, buttons 7703a and 7703b which are input means, speakers 7704a and 7704b which are voice output means, and an external connection port 7 It may have a microphone 705, a microphone 7706, etc. Further, the mobile information terminal 7700 can be equipped with a battery 7709 having flexibility. The battery 7709 can be arranged so as to overlap, for example, the display unit 7 001.

[0293] The housing 7701, the display unit 7001, and the battery 7709 have flexibility. Therefore, it is easy to bend the mobile information terminal 7700 into a desired shape and to twist the mobile information terminal 7700. For example, the mobile information terminal 7700 can be used by bending it so that the display unit 7001 faces inward or outward. Alternatively, the mobile information terminal 7700 can also be used in a state where it is rolled up. Since the housing 7701 and the display unit 7 001 can be freely deformed in this way, the mobile information terminal 7700 has the advantage of being less likely to be damaged when dropped or when an unintended external force is applied.

[0294] Further, since the mobile information terminal 7700 is lightweight, it can be used by holding the upper part of the housing 7701 with a clip or the like and hanging it, or by fixing the housing 7701 to a wall surface with a magnet or the like in various situations with good convenience.

[0295] FIG. 23(I) shows an example of a wristwatch-type mobile information terminal. The mobile information terminal 7800 has a band 7801, a display unit 7001, input / output terminals 7802, operation buttons 7803, etc. The band 7801 has the function of a housing. Further, the mobile information terminal 7800 can be equipped with a battery 7805 having flexibility. The battery 7805 can be arranged so as to overlap, for example, the display unit 70 01 or the band 7801.

[0296] The band 7801, the display unit 7001, and the battery 7805 are flexible. Therefore , it is easy to bend the portable information terminal 7800 into a desired shape.

[0297] In addition to time setting, the operation button 7803 can perform various functions such as turning on and off the power, turning on and off wireless communication, executing and canceling the silent mode, and executing and canceling the power saving mode. For example, the functions of the operation button 7803 can be freely set by the operating system incorporated in the portable information terminal 7800.

[0298] Also, by touching the icon 7804 displayed on the display unit 7001 with a finger or the like, an application can be launched.

[0299] In addition, the portable information terminal 7800 can perform short-range wireless communication compliant with a communication standard. For example, by communicating with a wireless headset capable of wireless communication, a hands-free call can be made.

[0300] The portable information terminal 7800 may also have an input / output terminal 7802. When the input / output terminal 7 802 is provided, direct data exchange can be performed with other information terminals via a connector. Also, charging can be performed via the input / output terminal 7802. Note that the charging operation of the portable information terminal illustrated in this embodiment may be performed by non-contact power transmission without using the input / output terminal.

[0301] FIG. 24(A) shows the exterior of the automobile 7900. FIG. 24(B) shows the driver's seat of the automobile 7900. The automobile 7900 includes a vehicle body 7901, wheels 7902, a front glass 7903, a ​​It has an Illuminator 7904, a foglamp 7905, etc.

[0302] The display device according to one aspect of the present invention can be used for a display unit of an automobile 7900 or the like. For example, the display device according to one aspect of the present invention can be provided in the display units 7910 to 7917 shown in FIG. 24(B).

[0303] The display unit 7910 and the display unit 7911 are provided on the windshield of the automobile. In one aspect of the present invention, by forming the electrodes of the display device from a conductive material having translucency, it is possible to obtain a so-called see-through display device in which the opposite side can be seen through. In the case of a see-through display device, there is no obstruction to the field of view even during driving of the automobile 7900. Therefore, the display device according to one aspect of the present invention can be installed on the windshield of the automobile 7900. When a transistor or the like is provided in the display device, an organic transistor using an organic semiconductor material or a transistor using an oxide semiconductor, or a transistor having translucency may be used.

[0304] The display unit 7912 is provided on the pillar portion. The display unit 7913 is provided on the dashboard portion . For example, by projecting the video from the imaging means provided on the vehicle body onto the display unit 7912, it is possible to complement the field of view blocked by the pillar. Similarly, in the display unit 7 913, it is possible to complement the field of view blocked by the dashboard, and in the display unit 7914 , it is possible to complement the field of view blocked by the door. That is, by projecting the video from the imaging means provided outside the automobile, it is possible to compensate for blind spots and improve safety. ​In addition, by displaying an image that complements the invisible part, safety confirmation can be performed more naturally and without a sense of incongruity. This can be achieved.

[0305] In addition, the display unit 7917 is provided on the steering wheel. The display unit 7915, the display unit 791 6, or the display unit 7917 can provide various other information such as navigation information, speedometer, tachometer, driving distance, fuel supply amount, gear state, air conditioner settings, etc. Also, the display items and layout displayed on the display unit can be appropriately changed according to the user's preference. Note that the above information can also be displayed on the display units 7910 to 7914.

[0306] Note that the display units 7910 to 7917 can also be used as lighting devices.

[0307] The display unit to which the display device according to one aspect of the present invention is applied may be flat. In this case, the display device according to one aspect of the present invention may have a configuration without curvature and flexibility.

[0308] Examples of digital signage are shown in FIGS. 24(C) and (D). Digital signage includes a housing 8000, a display unit 8001, and a speaker 8003, etc. Further, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0309] FIG. 24(D) shows digital signage attached to a cylindrical pillar.

[0310] The larger the display unit 8001, the more information can be provided at once. Also, the The wider the display unit 8001 is, the more likely it is to catch people's eyes. For example, it can enhance the advertising effect. This can be achieved.

[0311] By applying a touch panel to the display unit 8001, not only can images or videos be displayed on the display unit 8001, but also users can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced through intuitive operations.

[0312] The portable game machine shown in Fig. 24(E) includes a housing 8101, a housing 8102, a display unit 8103 , a display unit 8104, a microphone 8105, a speaker 8106, operation keys 8107, a stylus 8108, etc.

[0313] The portable game machine shown in Fig. 24(E) has two display units (display unit 8103 and display unit 810 4). Note that the number of display units of the electronic device according to one aspect of the present invention is not limited to two, and may be one or three or more. When the electronic device has a plurality of display units, at least one display unit may have the display device according to one aspect of the present invention.

[0314] Fig. 24(F) shows a notebook personal computer, which includes a housing 8111, a display unit 811 2, a keyboard 8113, a pointing device 8114, etc.

[0315] The display device according to one aspect of the present invention can be applied to the display unit 8112.

[0316] Fig. 25(A) shows the appearance of the camera 8400 with the finder 8500 attached.

[0317] The camera 8400 includes a housing 8401, a display unit 8402, operation buttons 8403, a shutter button 8404, etc. The camera 8400 also has a detachable lens 8406 attached thereto.

[0318] Here, the camera 8400 is configured such that the lens 8406 can be removed from the housing 8401 and replaced, but the lens 8406 and the housing may be integrated.

[0319] The camera 8400 can take an image by pressing the shutter button 8404. The display unit 8402 also has a function as a touch panel, and it is also possible to take an image by touching the display unit 8402.

[0320] The housing 8401 of the camera 8400 has a mount with electrodes, and in addition to the viewfinder 850 0, a strobe device or the like can be connected.

[0321] The viewfinder 8500 includes a housing 8501, a display unit 8502, buttons 8503, etc. .

[0322] The housing 8501 has a mount that engages with the mount of the camera 8400, and the viewfinder 8500 can be attached to the camera 8400. The mount also has electrodes, and images or the like received from the camera 8400 via the electrodes can be displayed on the display unit 8502.

[0323] The button 8503 has a function as a power button. By operating the button 8503, the display on the display unit 8502 can be turned on and off.

[0324] The display device according to an aspect of the present invention can be applied to the display unit 8402 of the camera 8400 and the display unit 8502 of the viewfinder 8500. The display device according to an aspect of the present invention can be applied.

[0325] In FIG. 25(A), the camera 8400 and the viewfinder 8500 are separate electronic devices, and they are configured to be detachable. However, a viewfinder equipped with the display device according to an aspect of the present invention may be built into the housing 8401 of the camera 8400. The display device according to an aspect of the present invention may be built in.

[0326] FIG. 25(B) shows the appearance of the head-mounted display 8200.

[0327] The head-mounted display 8200 has a mounting portion 8201, a lens 8202, a main body 82 03, a display unit 8204, a cable 8205, etc. A battery 8206 is built into the mounting portion 8201. The battery 8206 is built in.

[0328] The cable 8205 supplies power from the battery 8206 to the main body 8203. The main body 82 03 is equipped with a wireless receiver or the like, and can display video information such as received image data on the display unit 8204. Further, a camera provided in the main body 8203 captures the movement of the user's eyeball or eyelid, and calculates the coordinates of the user's viewpoint based on the information, so that the user's viewpoint can be used as input means. captured, and the coordinates of the user's viewpoint are calculated based on the information, so that the user's viewpoint can be used as input means.

[0329] In addition, a plurality of electrodes may be provided at positions where the mounting portion 8201 touches the user. The main body 8203 may have a function of recognizing the user's viewpoint by detecting the current flowing through the electrodes as the user's eyeball moves. Further, the main body 8203 may have a function of monitoring the user's pulse by detecting the current flowing through the electrodes. Also, the mounting portion 820 The main body 8203 may have a function of recognizing the user's viewpoint by detecting the current flowing through the electrodes as the user's eyeball moves. Further, the main body 8203 may have a function of monitoring the user's pulse by detecting the current flowing through the electrodes. Also, the mounting portion 820 The main body 8203 may have a function of monitoring the user's pulse by detecting the current flowing through the electrodes. Also, the mounting portion 820 1 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may also have a function of displaying the user's biological information on the display unit 8204. Further, it may detect the movement of the user's head and change the video displayed on the display unit 8204 in accordance with the movement. The display device according to one aspect of the present invention can be applied to the display unit 8204. FIGS. 25(C) and (D) show the appearance of the head-mounted display 8300. The head-mounted display 8300 includes a housing 8301, two display units 8302, operation buttons 8303, and a band-shaped fixture 8304.

[0330] In addition to the functions of the head-mounted display 8200, the head-mounted display 8300 includes two display units.

[0331] By having two display units 8302, the user can view one display unit for each eye. Thereby, even when performing three-dimensional display using parallax or the like, a high-resolution video can be displayed. Further, the display unit 8302 is curved in an arc shape centered approximately on the user's eyes. Thereby, since the distance from the user's eyes to the display surface of the display unit is constant, the user can view a more natural video. Further, even when the luminance and chromaticity of the light from the display unit change depending on the viewing angle, since the user's eyes are positioned in the normal direction of the display surface of the display unit, the influence can be substantially ignored, and thus a more realistic video can be displayed.

[0332] 1 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may also have a function of displaying the user's biological information on the display unit 8204. Further, it may detect the movement of the user's head and change the video displayed on the display unit 8204 in accordance with the movement. The display device according to one aspect of the present invention can be applied to the display unit 8204.

[0333] In addition to the functions of the head-mounted display 8200, the head-mounted display 8300 includes two display units. By having two display units 8302, the user can view one display unit for each eye. Thereby, even when performing three-dimensional display using parallax or the like, a high-resolution video can be displayed. Further, the display unit 8302 is curved in an arc shape centered approximately on the user's eyes. Thereby, since the distance from the user's eyes to the display surface of the display unit is constant, the user can view a more natural video. Further, even when the luminance and chromaticity of the light from the display unit change depending on the viewing angle, since the user's eyes are positioned in the normal direction of the display surface of the display unit, the influence can be substantially ignored, and thus a more realistic video can be displayed.

[0334] By having two display units 8302, the user can view one display unit for each eye. Thereby, even when performing three-dimensional display using parallax or the like, a high-resolution video can be displayed. Further, the display unit 8302 is curved in an arc shape centered approximately on the user's eyes. Thereby, since the distance from the user's eyes to the display surface of the display unit is constant, the user can view a more natural video. Further, even when the luminance and chromaticity of the light from the display unit change depending on the viewing angle, since the user's eyes are positioned in the normal direction of the display surface of the display unit, the influence can be substantially ignored, and thus a more realistic video can be displayed. ​​​

[0335] The operation button 8303 has functions such as a power button. In addition to the operation button 8303, it may also have other buttons.

[0336] Also, as shown in FIG. 25(E), a lens 8305 may be provided between the display unit 8302 and the position of the user's eyes. With the lens 8305, the user can magnify the display unit 8302, so that the sense of presence is enhanced. At this time, as shown in FIG. 25(E), a dial 8306 for changing the position of the lens for vision adjustment may be provided.

[0337] The display device according to one aspect of the present invention can be applied to the display unit 8302. Since the display device according to one aspect of the present invention has extremely high definition, even when magnified using the lens 8305 as shown in FIG. 25(E), a more realistic image can be displayed without the user being able to visually recognize the pixels.

[0338] Examples of the case where there is one display unit 8302 are shown from FIG. 26(A) to FIG. 26(C). By adopting such a configuration, the number of components can be reduced.

[0339] The display unit 8302 can display two images, an image for the right eye and an image for the left eye, side by side in two regions on the left and right. Thereby, a stereoscopic image using binocular parallax can be displayed.

[0340] Alternatively, an image visible to both eyes may be displayed over the entire area of the display unit 8302. Thereby, a panoramic image can be displayed across both ends of the visual field, enhancing the sense of reality.

[0341] ​​​Also, as shown in FIG. 26(C), a lens 8305 may be provided. On the display unit 8302, two images may be arranged and displayed, or one image may be displayed on the display unit 8302, and a configuration may be adopted in which the same image can be viewed with both eyes through the lens 8305.

[0342] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

Explanation of Reference Numerals

[0343] GL Scanning Line SL Signal Line V0 Wiring ANODE Current Supply Line M1 Transistor M2 Transistor M3 Transistor M4 Transistor M5 Transistor MC Capacitor Element EL Light Emitting Element CATHODE Common Wiring 100 Transistor 102 Substrate 104 Insulating Layer 106 Conductive Layer 108 Oxide Semiconductor Layer 110 Insulating Layer 110t Film Thickness 104t Film Thickness 112 Metal Oxide Layer 116 Insulating Layer 108i Channel Region 108s Source Region 108d Drain Region 141a Opening 141b Opening 120a Conductive Layer 120b Conductive Layer PIX Pixel PIX_A Pixel PIX_B Pixel ​​PIX_C pixel PIX_D pixel PIX_E pixel PIX_F pixel PIX_UL pixel PIX_UR pixel PIX_LL pixel PIX_LR pixel SUB substrate 151 conductive layer 152 conductive layer 153 conductive layer 154 insulating layer 161 oxide semiconductor layer 162 oxide semiconductor layer 163 insulating layer 171 metal oxide layer 172 metal oxide layer 173 metal oxide layer 174 insulating layer 181 conductive layer 182 conductive layer 183 conductive layer 184 conductive layer 185 conductive layer 186 insulating layer 187 insulating layer 188 insulating layer 190 opening GL_LC scanning line GL_EL scanning line SL_LC signal line SL_EL signal line M6 transistor LC liquid crystal element 191 layer 192 electrode 193 opening 10 display device 11 pixel section 12 scanning line drive circuit 13 signal line drive circuit 15 terminal section 16a wiring 16b wiring GL1 scanning line GL2 scanning line GL3 scanning line V1 wiring 201 Substrate 202 Substrate 211 Insulating layer 212 Insulating layer 213 Insulating layer 214 Insulating layer 215 Spacer 216 Insulating layer 217 Insulating layer 218 Insulating layer 220 Adhesive layer 221 Insulating layer 222 EL layer 223 Electrode 224 Optical adjustment layer 225 Pixel electrode 230a Structure 230b Structure 231 Light-shielding layer 232 Coloring layer 242 FPC 243 Connection layer 250 Space 251 Transistor 252 Transistor 253 Capacitor element 254 Light-emitting element 255 Transistor 260 Encapsulant 261 Adhesive layer 262 Adhesive layer 271 Semiconductor layer 272 Conductive layer 273 Conductive layer 274 Conductive layer 275 Conductive layer 276 Insulating layer 291 Conductive layer 292 Conductive layer 293 Conductive layer 294 Insulating layer 295 Adhesive layer 296 Substrate 297 FPC 298 Connection layer 299 Terminal part 301 Fabrication substrate 303 Release layer 305 Layer to be released 307 Next layer 321 Substrate for production 323 Release layer 325 Layer to be released 331 Substrate 333 Next layer 341 Substrate 343 Next layer 351 Region 7000 Display unit 7001 Display unit 7100 Mobile phone 7101 Housing 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7110 Mobile phone 7200 Portable information terminal 7201 Housing 7202 Operation button 7203 Information 7210 Portable information terminal 7300 Television device 7301 Housing 7303 Stand 7311 Remote control operation unit 7400 Lighting device 7401 Base part 7403 Operation switch 7411 Light emitting part 7500 Portable information terminal 7501 Housing 7502 Member 7503 Operation button 7600 Portable information terminal 7601 Housing 7602 Hinge 7650 Portable information terminal 7651 Non-display part 7700 Portable information terminal 7701 Housing 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Microphone 7709 Battery 7800 Mobile information terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icon 7805 Battery 7900 Automobile 7901 Vehicle body 7902 Wheel 7903 Windshield 7904 Light 7905 Fog lamp 7910 Display unit 7911 Display unit 7912 Display unit 7913 Display unit 7914 Display unit 7915 Display unit 7916 Display unit 7917 Display unit 8000 Housing 8001 Display unit 8003 Speaker 8101 Housing 8102 Housing 8103 Display unit 8104 Display unit 8105 Microphone 8106 Speaker 8107 Operation key 8108 Stylus 8111 Housing 8112 Display unit 8113 Keyboard 8114 Pointing device 8200 Head-mounted display 8201 Mounting part 8202 Lens 8203 Main body 8204 Display unit 8205 Cable 8206 Battery 8300 Head-Mounted Display 8301 Housing 8302 Display Unit 8303 Operation Button 8304 Fixture 8305 Lens 8306 Dial 8400 Camera 8401 Housing 8402 Display Unit 8403 Operation Button 8404 Shutter Button 8406 Lens 8500 Finder 8501 Housing 8502 Display Unit 8503 Button

Claims

1. A pixel includes first to third transistors, a light-emitting element, a signal line, a wiring, and a current supply line, An image signal is input to the signal line, a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is electrically connected to the wiring; the other of the source and the drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a first semiconductor layer having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a second conductive layer having a region disposed above the first semiconductor layer and functioning as a gate of the first transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having an area disposed above the first conductive layer and electrically connected to the first conductive layer; a fifth conductive layer having an area disposed above the fourth conductive layer and electrically connected to the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and electrically connected to the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; each of the fifth conductive layer, the sixth conductive layer, the seventh conductive layer, and the eighth conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is electrically connected to a pixel electrode of the light-emitting element; the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

2. A pixel includes first to third transistors, a light-emitting element, a signal line, a wiring, and a current supply line, An image signal is input to the signal line, a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is electrically connected to the wiring; the other of the source and the drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a first semiconductor layer having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a second conductive layer having a region disposed above the first semiconductor layer and functioning as a gate of the first transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having an area disposed above the first conductive layer and electrically connected to the first conductive layer; a fifth conductive layer having an area disposed above the fourth conductive layer and electrically connected to the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and electrically connected to the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; each of the fifth conductive layer, the sixth conductive layer, the seventh conductive layer, and the eighth conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is electrically connected to a pixel electrode of the light-emitting element; a channel formation region of the first transistor does not overlap with the first conductive layer; the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

3. A pixel includes first to third transistors, a light-emitting element, a signal line, a wiring, and a current supply line, An image signal is input to the signal line, a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is always electrically connected to the wiring; The other of the source and the drain of the third transistor is always electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a first semiconductor layer having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a second conductive layer having a region disposed above the first semiconductor layer and functioning as a gate of the first transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having a region disposed above the first conductive layer and always in electrical contact with the first conductive layer; a fifth conductive layer having a region disposed above the fourth conductive layer and always in electrical contact with the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and always in electrical contact with the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; each of the fifth conductive layer, the sixth conductive layer, the seventh conductive layer, and the eighth conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is always electrically connected to a pixel electrode of the light-emitting element, the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

4. A pixel includes first to third transistors, a light-emitting element, a signal line, a wiring, and a current supply line, An image signal is input to the signal line, a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is always electrically connected to the wiring; The other of the source and the drain of the third transistor is always electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a first semiconductor layer having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a second conductive layer having a region disposed above the first semiconductor layer and functioning as a gate of the first transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having a region disposed above the first conductive layer and always in electrical contact with the first conductive layer; a fifth conductive layer having a region disposed above the fourth conductive layer and always in electrical contact with the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and always in electrical contact with the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; each of the fifth conductive layer, the sixth conductive layer, the seventh conductive layer, and the eighth conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is always electrically connected to a pixel electrode of the light-emitting element, a channel formation region of the first transistor does not overlap with the first conductive layer; the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

Images