Detection device

Abstract

To provide a detection device capable of improving a utilization efficiency of a light.SOLUTION: A detection device includes: a substrate; a plurality of photodiodes provided to the substrate; a plurality of transistors provided so as to be corresponded to each of the plurality of photodiodes; a plurality of gate lines extended to a first direction; a plurality of signal lines extended to a second direction crossed to the first direction; a plurality of bottom electrodes that is provided between each transistor and each photodiode to a direction vertical to the substrate, and is provided so as to be corresponded to each of the plurality of photodiodes; an upper electrode provided over the plurality of photodiodes; and a reflective layer provided between the substrate and each photodiodes to the direction vertical to the substrate. The bottom electrode includes an area smaller than that of an area parted by a plurality of gate lines and a plurality of signal lines, and the reflective layer is provided between the adjacent bottom electrodes in a plan view.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a detection device.

Background Art

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (for example, Patent Document 1). Such an optical sensor has a plurality of photodiodes in which an organic semiconductor material is used as an active layer. The photodiodes are arranged between a lower electrode and an upper electrode.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] By thinning the active layer of the photodiode, the sensor capacitance formed between the lower electrode and the upper electrode can be increased. The charges generated when the photodiode is irradiated with light are accumulated in the sensor capacitance. On the other hand, when the active layer of the photodiode is thinned, the amount of light that can be absorbed by the photodiode when the photodiode is irradiated with light decreases, and the light utilization efficiency may decrease.

[0005] An object of the present invention is to provide a detection device capable of improving the light utilization efficiency.

Means for Solving the Problems

[0006] The detection device according to one aspect of the present invention includes a substrate, a plurality of photodiodes provided on the substrate, a plurality of transistors provided corresponding to each of the plurality of photodiodes, a plurality of gate lines extending in a first direction, a plurality of signal lines extending in a second direction intersecting the first direction, a plurality of lower electrodes provided in a direction perpendicular to the substrate between the transistors and the photodiodes and provided corresponding to each of the plurality of photodiodes, an upper electrode provided across the plurality of photodiodes, and a reflective layer provided between the substrate and the photodiodes in a direction perpendicular to the substrate. The lower electrode has an area smaller than an area defined by the plurality of gate lines and the plurality of signal lines, and the reflective layer is provided between adjacent lower electrodes in a plan view.

Brief Description of Drawings

[0007]

Figure 1

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Embodiments for Carrying Out the Invention

[0008] Embodiments (modes for carrying out) of the present invention will be described in detail with reference to the drawings. The present disclosure is not limited by the content described in the following embodiments. Further, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and those that can be easily conceived by those skilled in the art with appropriate modifications while maintaining the gist of the present disclosure are naturally included in the scope of the present disclosure. Also, for the purpose of making the description clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual aspect, but this is merely an example and does not limit the interpretation of the present disclosure. Also, in the present disclosure and each figure, the same reference numerals are given to the same elements as those described above with respect to the previously shown figures, and detailed descriptions may be omitted as appropriate.

[0009] In this specification and the claims, when expressing the aspect of arranging another structure on a certain structure, when simply described as "on", unless otherwise specified, it includes both the case of arranging another structure directly on a certain structure in contact therewith and the case of arranging another structure above a certain structure via still another structure.

[0010] (First Embodiment) FIG. 1 is a plan view showing a detection device according to the first embodiment. As shown in FIG. 1, the detection device 1 includes a substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, a first light source 53, and a second light source 54. A plurality of first light sources 53 are provided on the first light source substrate 51. A plurality of second light sources 54 are provided on the second light source substrate 52.

[0011] A control substrate 121 is electrically connected to the substrate 21 via a wiring substrate 71. The wiring substrate 71 is, for example, a flexible printed circuit board or a rigid substrate. The detection circuit 48 is provided on the wiring substrate 71. The control circuit 122 and the power supply circuit 123 are provided on the control substrate 121. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. Further, the control circuit 122 supplies control signals to the first light source 53 and the second light source 54 to control the lighting or non-lighting of the first light source 53 and the second light source 54. The power supply circuit 123 supplies voltage signals such as a sensor power supply signal VDDSNS (see FIG. 5) to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. Further, the power supply circuit 123 supplies a power supply voltage to the first light source 53 and the second light source 54.

[0012] The substrate 21 has a detection region AA and a peripheral region GA. The detection region AA is a region where a plurality of photodiodes PD (see FIG. 5) included in the sensor unit 10 are provided. The peripheral region GA is a region between the outer periphery of the detection region AA and the outer edge of the substrate 21, and is a region where no plurality of photodiodes PD are provided.

[0013] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral region GA. Specifically, the gate line driving circuit 15 is provided in a region extending along the second direction Dy in the peripheral region GA. The signal line selection circuit 16 is provided in a region extending along the first direction Dx in the peripheral region GA and is provided between the sensor unit 10 and the detection circuit 48.

[0014] In the following description, the first direction Dx is a direction in a plane parallel to the substrate 21. The second direction Dy is a direction in a plane parallel to the substrate 21 and is a direction orthogonal to the first direction Dx. Note that the second direction Dy may intersect the first direction Dx without being orthogonal thereto. The “plan view” refers to the positional relationship when viewed from a direction perpendicular to the substrate 21.

[0015] The plurality of first light sources 53 are provided on the first light source base material 51 and are arranged along the second direction Dy. The plurality of second light sources 54 are provided on the second light source base material 52 and are arranged along the second direction Dy. The first light source base material 51 and the second light source base material 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control substrate 121, respectively.

[0016] For the plurality of first light sources 53 and the plurality of second light sources 54, for example, inorganic LEDs (Light Emitting Diodes), organic ELs (OLEDs: Organic Light Emitting Diodes), or the like are used. The plurality of first light sources 53 and the plurality of second light sources 54 emit first light and second light having different wavelengths, respectively.

[0017] The first light emitted from the first light source 53 is mainly reflected by the surface of the object to be detected Fg such as a finger and then enters the sensor unit 10. Thereby, the sensor unit 10 can detect a fingerprint by detecting the uneven shape of the surface such as a finger. The second light emitted from the second light source 54 mainly reflects inside the finger or the like or passes through the finger or the like and then enters the sensor unit 10. Thereby, the sensor unit 10 can detect information about the living body inside the finger or the like. Information about the living body is, for example, a pulse wave, a pulse, a blood vessel image, etc. of a finger or a palm. That is, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints or a vein detection device that detects blood vessel patterns such as veins.

[0018] The first light may have a wavelength of 500 nm or more and 600 nm or less, for example, about 550 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, about 850 nm. In this case, the first light is blue or green visible light, and the second light is infrared light. The sensor unit 10 can detect a fingerprint based on the first light emitted from the first light source 53. The second light emitted from the second light source 54 is reflected inside the object to be detected Fg such as a finger or passes through and is absorbed by the finger or the like and then enters the sensor unit 10. Thereby, the sensor unit 10 can detect a pulse wave or a blood vessel image (blood vessel pattern) as information about the living body inside the finger or the like.

[0019] Alternatively, the first light may have a wavelength of 600 nm or more and 700 nm or less, for example, about 660 nm, and the second light may have a wavelength of 780 nm or more and 900 nm or less, for example, about 850 nm. In this case, based on the first light emitted from the first light source 53 and the second light emitted from the second light source 54, the sensor unit 10 can detect blood oxygen saturation in addition to a pulse wave, a pulse, and a blood vessel image as information about the living body. Thus, since the detection device 1 has the first light source 53 and the plurality of second light sources 54, by performing detection based on the first light and detection based on the second light, various information about the living body can be detected.

[0020] Note that the arrangement of the first light source 53 and the second light source 54 shown in FIG. 1 is merely an example and can be changed as appropriate. The detection device 1 is provided with a plurality of types of light sources (the first light source 53 and the second light source 54) as light sources. However, it is not limited to this, and there may be one type of light source. For example, a plurality of first light sources 53 and a plurality of second light sources 54 may be arranged on each of the first light source substrate 51 and the second light source substrate 52. Also, the number of light source substrates on which the first light source 53 and the second light source 54 are provided may be one or three or more. Alternatively, at least one or more light sources may be arranged.

[0021] FIG. 2 is a cross-sectional view showing a schematic cross-sectional configuration of the detection device according to the first embodiment. As shown in FIG. 2, a plurality of detection elements PAA including a photodiode PD are arranged on a substrate 21. The photodiode PD is an OPD (Organic Photodiode) using an organic semiconductor. The light source LS is provided above the substrate 21 and the plurality of photodiodes PD with a detection object Fg such as a finger interposed therebetween. The light L1 emitted from the light source LS passes through the detection object Fg and irradiates the plurality of photodiodes PD. The plurality of photodiodes PD can detect information regarding the detection object Fg by using the light L1 irradiated from the light source LS.

[0022] The detection device 1 shown in FIG. 2 is a transmissive detection device that detects the light L1 transmitted through the detection object Fg. However, it is not limited to this, and the detection device 1 may be a reflective detection device. Note that the light source LS shown in FIG. 2 is configured to include at least one of the above-described first light source 53 and second light source 54. However, the number, arrangement, etc. of the light sources LS can be changed as appropriate.

[0023] FIG. 3 is a block diagram showing a configuration example of the detection device according to the first embodiment. As shown in FIG. 3, the detection device 1 further includes a detection control unit 11 and a detection unit 40. Part or all of the functions of the detection control unit 11 are included in the control circuit 122. Also, part or all of the functions other than the detection circuit 48 in the detection unit 40 are included in the control circuit 122.

[0024] The sensor unit 10 has a plurality of photodiodes PD. The photodiodes PD included in the sensor unit 10 output an electrical signal corresponding to the irradiated light as a detection signal Vdet to the signal line selection circuit 16. Also, the sensor unit 10 performs detection in accordance with the gate drive signal Vgcl supplied from the gate line drive circuit 15.

[0025] The detection control unit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls these operations. The detection control unit 11 supplies various control signals such as a start signal STV, a clock signal CK, and a reset signal RST1 to the gate line drive circuit 15. Also, the detection control unit 11 supplies various control signals such as a selection signal ASW to the signal line selection circuit 16. Further, the detection control unit 11 supplies various control signals to the first light source 53 and the second light source 54 to control the lighting and non-lighting thereof, respectively.

[0026] The gate line drive circuit 15 is a circuit that drives a plurality of gate lines GCL (see FIG. 4) based on various control signals. The gate line drive circuit 15 sequentially or simultaneously selects a plurality of gate lines GCL, and supplies a gate drive signal Vgcl to the selected gate line GCL. Thereby, the gate line drive circuit 15 selects a plurality of photodiodes PD connected to the gate line GCL.

[0027] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL (see FIG. 4). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SGL and the detection circuit 48 based on the selection signal ASW supplied from the detection control unit 11. Thereby, the signal line selection circuit 16 outputs the detection signal Vdet of the photodiode PD to the detection unit 40.

[0028] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a coordinate extraction unit 45, a storage unit 46, a detection timing control unit 47, an image processing unit 49, and an output processing unit 50. The detection timing control unit 47 controls the detection circuit 48, the signal processing unit 44, the coordinate extraction unit 45, and the image processing unit 49 to operate synchronously based on the control signal supplied from the detection control unit 11.

[0029] The detection circuit 48 is, for example, an analog front end circuit (AFE, Analog Front End). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplification unit 42 and an A / D conversion unit 43. The detection signal amplification unit 42 amplifies the detection signal Vdet. The A / D conversion unit 43 converts the analog signal output from the detection signal amplification unit 42 into a digital signal.

[0030] The signal processing unit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing unit 44 can detect the unevenness of the surface of the finger or palm based on the signal from the detection circuit 48. Also, the signal processing unit 44 can detect information related to a living body based on the signal from the detection circuit 48. Information related to a living body is, for example, a blood vessel image, a pulse wave, a pulse, a blood oxygen concentration, etc. of a finger or palm.

[0031] Also, the signal processing unit 44 may acquire the detection signals Vdet (information related to a living body) simultaneously detected by a plurality of photodiodes PD and perform a process of averaging them. In this case, the detection unit 40 can suppress noise and measurement errors caused by relative positional displacement between the detected object Fg such as a finger and the sensor unit 10, enabling stable detection.

[0032] The storage unit 46 temporarily stores the signal calculated by the signal processing unit 44. The storage unit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0033] The coordinate extraction unit 45 is a logic circuit that obtains detection coordinates of unevenness on the surface of a finger or the like when finger contact or proximity is detected in the signal processing unit 44. Further, the coordinate extraction unit 45 is a logic circuit that obtains detection coordinates of blood vessels in a finger or palm. The image processing unit 49 combines the detection signals Vdet output from the respective photodiodes PD of the sensor unit 10 to generate two-dimensional information indicating the shape of unevenness on the surface of a finger or the like and two-dimensional information indicating the shape of blood vessels in a finger or palm. Note that the coordinate extraction unit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates. Further, the coordinate extraction unit 45 and the image processing unit 49 may not be included in the detection unit 40.

[0034] The output processing unit 50 functions as a processing unit that performs processing based on outputs from a plurality of photodiodes PD. The output processing unit 50 may include the detection coordinates obtained by the coordinate extraction unit 45, the two-dimensional information generated by the image processing unit 49, etc. in the sensor output voltage Vo. Further, the function of the output processing unit 50 may be integrated into another configuration (for example, the image processing unit 49 or the like).

[0035] Next, a circuit configuration example of the detection device 1 will be described. FIG. 4 is a circuit diagram showing the detection device. As shown in FIG. 4, the sensor unit 10 has a plurality of detection elements PAA arranged in a matrix. Each of the plurality of detection elements PAA is provided with a photodiode PD.

[0036] The gate lines GCL extend in the first direction Dx and are connected to a plurality of detection elements PAA arranged in the first direction Dx. Further, the plurality of gate lines GCL(1), GCL(2),..., GCL(8) are arranged in the second direction Dy and are respectively connected to the gate line driving circuit 15. In the following description, when it is not necessary to distinguish and describe the plurality of gate lines GCL(1), GCL(2),..., GCL(8), they are simply referred to as gate lines GCL. Further, in FIG. 4, eight gate lines GCL are shown for easy understanding of the description, but this is merely an example, and the gate lines GCL may be arranged in M (M is 8 or more, for example, M = 256) numbers.

[0037] The signal line SGL extends in the second direction Dy and is connected to the photodiodes PD of a plurality of detection elements PAA arranged in the second direction Dy. Also, a plurality of signal lines SGL(1), SGL(2), …, SGL(12) are arranged in the first direction Dx and are respectively connected to the signal line selection circuit 16 and the reset circuit 17. In the following description, when it is not necessary to distinguish and describe the plurality of signal lines SGL(1), SGL(2), …, SGL(12), they are simply represented as the signal line SGL.

[0038] Also, for the sake of clarity in the description, 12 signal lines SGL are shown, but this is merely an example. The signal lines SGL may be arranged in N numbers (N is 12 or more, for example, N = 252). Also, the resolution of the sensor is, for example, 508 dpi (dot per inch), and the number of cells is 252×256. Also, in FIG. 4, the sensor unit 10 is provided between the signal line selection circuit 16 and the reset circuit 17. This is not limiting, and the signal line selection circuit 16 and the reset circuit 17 may be respectively connected to the ends of the signal line SGL in the same direction.

[0039] The gate line driving circuit 15 receives various control signals such as the start signal STV, the clock signal CK, and the reset signal RST1 from the control circuit 122 (see FIG. 1). Based on the various control signals, the gate line driving circuit 15 sequentially selects a plurality of gate lines GCL(1), GCL(2), …, GCL(8) in a time-division manner. The gate line driving circuit 15 supplies the gate driving signal Vgcl to the selected gate line GCL. Thereby, the gate driving signal Vgcl is supplied to a plurality of first switching elements Tr connected to the gate line GCL, and a plurality of detection elements PAA arranged in the first direction Dx are selected as the detection targets.

[0040] The signal line selection circuit 16 includes a plurality of selection signal lines Lsel, a plurality of output signal lines Lout, and a third switching element TrS. The plurality of third switching elements TrS are provided corresponding to the plurality of signal lines SGL respectively. Six signal lines SGL(1), SGL(2),..., SGL(6) are connected to a common output signal line Lout1. Six signal lines SGL(7), SGL(8),..., SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1 and Lout2 are connected to the detection circuit 48 respectively.

[0041] Here, the signal lines SGL(1), SGL(2),..., SGL(6) are defined as the first signal line block, and the signal lines SGL(7), SGL(8),..., SGL(12) are defined as the second signal line block. The plurality of selection signal lines Lsel are respectively connected to the gates of the third switching elements TrS included in one signal line block. Also, one selection signal line Lsel is connected to the gates of the third switching elements TrS of the plurality of signal line blocks.

[0042] The control circuit 122 (see FIG. 1) sequentially supplies the selection signal ASW to the selection signal lines Lsel. Thereby, the signal line selection circuit 16 sequentially selects the signal lines SGL in a time-division manner in one signal line block by the operation of the third switching element TrS. Also, the signal line selection circuit 16 selects one signal line SGL from each of the plurality of signal line blocks. With such a configuration, the detection device 1 can reduce the number of ICs (Integrated Circuits) including the detection circuit 48 or the number of terminals of the IC. Note that the signal line selection circuit 16 may bundle the plurality of signal lines SGL and connect them to the detection circuit 48.

[0043] As shown in FIG. 4, the reset circuit 17 includes a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is provided corresponding to the plurality of signal lines SGL. The reference signal line Lvr is connected to one of the sources or drains of the plurality of fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the plurality of fourth switching elements TrR.

[0044] The control circuit 122 supplies a reset signal RST2 to the reset signal line Lrst. As a result, a plurality of fourth switching elements TrR are turned on, and a plurality of signal lines SGL are electrically connected to the reference signal line Lvr. The power supply circuit 123 supplies a reference signal COM to the reference signal line Lvr. As a result, the reference signal COM is supplied to a capacitance element Ca (see FIG. 5) included in the plurality of detection elements PAA.

[0045] FIG. 5 is a circuit diagram showing a plurality of detection elements. Note that FIG. 5 also shows the circuit configuration of the detection circuit 48. As shown in FIG. 5, the detection element PAA includes a photodiode PD, a capacitance element Ca, and a first switching element Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0046] In FIG. 5, two gate lines GCL(m) and GCL(m + 1) arranged in the second direction Dy among the plurality of gate lines GCL are shown. Also, two signal lines SGL(n) and SGL(n + 1) arranged in the first direction Dx among the plurality of signal lines SGL are shown. The detection element PAA is an area surrounded by the gate line GCL and the signal line SGL.

[0047] The first switching element Tr is provided corresponding to the photodiode PD. The first switching element Tr is constituted by a thin film transistor, and in this example, is constituted by an n-channel MOS (Metal Oxide Semiconductor) type TFT (Thin Film Transistor).

[0048] The gates of the first switching elements Tr belonging to the plurality of detection elements PAA arranged in the first direction Dx are connected to the gate line GCL. The sources of the first switching elements Tr belonging to the plurality of detection elements PAA arranged in the second direction Dy are connected to the signal line SGL. The drain of the first switching element Tr is connected to the cathode of the photodiode PD and the capacitance element Ca.

[0049] The anode of the photodiode PD is supplied with the sensor power signal VDDSNS from the power supply circuit 123. Further, the reference signal COM serving as the initial potential of the signal line SGL and the capacitor element Ca is supplied to the signal line SGL and the capacitor element Ca from the power supply circuit 123.

[0050] When the detection element PAA is irradiated with light, a current corresponding to the amount of light flows through the photodiode PD, and thereby charges are accumulated in the capacitor element Ca. When the first switching element Tr is turned on, a current flows through the signal line SGL according to the charges accumulated in the capacitor element Ca. The signal line SGL is connected to the detection circuit 48 via the third switching element TrS of the signal line selection circuit 16. Thereby, the detection device 1 can detect a signal corresponding to the amount of light irradiated to the photodiode PD for each detection element PAA or for each block unit PAG.

[0051] During the read period, the switch SSW is turned on in the detection circuit 48 and is connected to the signal line SGL. The detection signal amplification unit 42 of the detection circuit 48 converts the variation in the current supplied from the signal line SGL into a variation in voltage and amplifies it. A reference potential (Vref) having a fixed potential is input to the non-inverting input part (+) of the detection signal amplification unit 42, and the signal line SGL is connected to the inverting input terminal (-). In the embodiment, the same signal as the reference signal COM is input as the reference potential (Vref) voltage. The signal processing unit 44 (see FIG. 3) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when no light is irradiated as the sensor output voltage Vo. Further, the detection signal amplification unit 42 includes a capacitor element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on and the charges in the capacitor element Cb are reset.

[0052] Next, the configuration of the photodiode PD will be described. FIG. 6 is a plan view schematically showing the detection device according to the first embodiment. FIG. 6 shows the reflective layer 25 with hatching.

[0053] As shown in FIG. 6, the photodiode PD, the lower electrode 23, the reflective layer 25, and the first switching element Tr are provided in a region surrounded by the gate line GCL and the signal line SGL. The lower electrode 23 is the cathode electrode of the photodiode PD, and the plurality of photodiodes PD and the plurality of lower electrodes 23 are arranged in a matrix on the substrate 21.

[0054] As shown in FIG. 6, the lower electrode 23 is formed with an area smaller than the region partitioned by the gate line GCL and the signal line SGL, and is provided so as to overlap at least a part of the first switching element Tr. The lower electrode 23 has a rectangular shape including a first side 23s1 extending in the second direction Dy and a second side 23s2 extending in the first direction Dx. The first side 23s1 of the lower electrode 23 and the signal line SGL are provided spaced apart in the first direction Dx. The second side 23s2 of the lower electrode 23 and the gate line GCL are provided spaced apart in the second direction Dy.

[0055] The reflective layer 25 is provided between adjacent lower electrodes 23 in a plan view. More specifically, the reflective layer 25 is formed continuously and integrally with the source electrode 62 of the first switching element Tr. The reflective layer 25 is provided between the first side 23s1 of the lower electrode 23 and the signal line SGL and between the second side 23s2 of the lower electrode 23 and the gate line GCL in a plan view. The reflective layer 25 is provided so as to overlap at least one of the gate lines GCL adjacent in the second direction Dy. In the example shown in FIG. 6, the outer edge portion of the reflective layer 25 is provided so as to overlap the gate line GCL at a position close to the first switching element Tr. Also, the reflective layer 25 is provided spaced apart from the signal line SGL.

[0056] As shown in FIG. 6, the first switching element Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64. The semiconductor layer 61 extends along the gate line GCL and is provided to intersect the gate electrode 64 in a plan view. The gate electrode 64 is connected to the gate line GCL and extends in a direction orthogonal to the gate line GCL. The two gate electrodes 64 are arranged side by side in the first direction Dx. The first switching element Tr of the present embodiment has a double gate structure in which the two gate electrodes 64 are provided to overlap the semiconductor layer 61.

[0057] One end side of the semiconductor layer 61 is connected to the source electrode 62 via the second contact hole CH2. The lower electrode 23 is electrically connected to the source electrode 62 of the first switching element Tr via the first contact hole CH1. Thereby, the first switching element Tr is electrically connected to the photodiode PD. The other end side of the semiconductor layer 61 is connected to the drain electrode 63 via the third contact hole CH3. The drain electrode 63 is connected to the signal line SGL.

[0058] Note that the configuration and arrangement of the first switching element Tr shown in FIG. 6 are merely examples and can be changed as appropriate.

[0059] FIG. 7 is a cross-sectional view taken along line VII-VII' of FIG. 6. As shown in FIG. 7, the detection device 1 includes a substrate 21, a first switching element Tr, an organic insulating film 94, a lower electrode 23, a photodiode PD, an upper electrode 24, and a reflective layer 25. Although not shown in FIG. 7, a sealing film that covers the photodiode PD and the upper electrode 24 is provided as necessary.

[0060] The substrate 21 is an insulating base material, and for example, glass or a resin material is used. The substrate 21 is not limited to a flat plate shape and may have a curved surface. In this case, the substrate 21 may be a film-like resin.

[0061] In this specification, in the direction perpendicular to the surface of the substrate 21, the direction from the substrate 21 toward the photodiode PD is defined as the "upper side" or simply "up". Also, the direction from the photodiode PD toward the substrate 21 is defined as the "lower side" or simply "down".

[0062] The undercoat films 91a and 91b are provided on the substrate 21. The undercoat films 91a and 91b are formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film, for example. Note that the configuration of the undercoat films 91a and 91b is not limited to a laminated film in which two layers of inorganic insulating films are laminated, and may be three or more layers, or may be a single-layer film. Also, a light-shielding film may be provided between the substrate 21 and the semiconductor layer 61.

[0063] A plurality of first switching elements Tr (transistors) are provided on the substrate 21. The plurality of first switching elements Tr are laminated on the substrate 21 in the order of the semiconductor layer 61, the gate electrode 64, the source electrode 62, and the drain electrode 63. More specifically, the semiconductor layer 61 is provided on the undercoat film 91b. The semiconductor layer 61 is made of polysilicon, for example. However, the semiconductor layer 61 is not limited thereto, and may be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, low-temperature polysilicon, or the like. Only an n-type TFT is shown as the first switching element Tr, but a p-type TFT may be formed simultaneously.

[0064] The gate insulating film 92 is provided on the undercoat film 91b so as to cover the semiconductor layer 61. The gate insulating film 92 is an inorganic insulating film such as a silicon oxide film, for example. The gate electrode 64 is provided on the gate insulating film 92. In the example shown in FIG. 7, the first switching element Tr has a top-gate structure. However, the present invention is not limited thereto, and the first switching element Tr may have a bottom-gate structure or a dual-gate structure in which the gate electrode 64 is provided on both the upper side and the lower side of the semiconductor layer 61.

[0065] The interlayer insulating film 93 is provided on the gate insulating film 92 so as to cover the gate electrode 64. The interlayer insulating film 93 has, for example, a laminated structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 through a second contact hole CH2 provided in the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 through a third contact hole CH3 provided in the gate insulating film 92 and the interlayer insulating film 93.

[0066] The overlapping portion 62s is formed continuously with the source electrode 62 and is provided in a region overlapping the gate electrode 64 in the same layer as the source electrode 62. In other words, the portion of the source electrode 62 that overlaps the gate electrode 64 can be represented as the overlapping portion 62s. The overlapping portion 62s can suppress the semiconductor layer 61 from being irradiated with the light L1.

[0067] The reflective layer 25 is formed continuously with the source electrode 62 and is provided in the same layer as the source electrode 62, that is, between the interlayer insulating film 93 and the organic insulating film 94. In other words, the portion of the source electrode 62 that does not overlap the lower electrode 23 can be represented as the reflective layer 25.

[0068] The organic insulating film 94 is provided on the interlayer insulating film 93 so as to cover the source electrode 62 and the drain electrode 63 of the first switching element Tr. The organic insulating film 94 is an organic planarizing film and is superior in coverage of wiring steps and surface flatness compared to inorganic insulating materials formed by CVD or the like.

[0069] A plurality of photodiodes PD are provided on the organic insulating film 94. The lower electrode 23 is provided between the substrate 21 and the organic insulating film 94 and the photodiodes PD in a direction perpendicular to the surface of the substrate 21.

[0070] More specifically, the lower electrode 23 is provided on the organic insulating film 94 and covers the bottom surface and the inner surface of the first contact hole CH1 formed in the organic insulating film 94. The lower electrode 23 is connected to the source electrode 62 of the first switching element Tr at the bottom surface of the first contact hole CH1. The lower electrode 23 is the cathode electrode of the photodiode PD and is formed of a metal material such as silver (Ag), for example. Thereby, the lower electrode 23 functions as a reflective electrode. The plurality of lower electrodes 23 are arranged separately for each detection element PAA (photodiode PD). Further, the photodiode PD has an area larger than that of the lower electrode 23 in plan view and covers the upper surface and the outer edge portion of the lower electrode 23.

[0071] The photodiode PD is provided to cover the plurality of lower electrodes 23 and the organic insulating film 94. In FIG. 7, although illustration is omitted, the photodiode PD has a structure in which, for example, an electron transport layer (first carrier transport layer), an active layer, and a hole transport layer (second carrier transport layer) are laminated between the lower electrode 23 and the upper electrode 24.

[0072] The electron transport layer is formed by coating using materials such as zinc acetate, ethoxylated polyethyleneimine (PEIE), and polyethyleneimine (PEI).

[0073] For the active layer, a mixture of a p-type organic semiconductor and an n-type organic semiconductor is used. Examples of the p-type organic semiconductor include PMDPP3T (poly((2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo(3,4-c)pyrrole-1,4-diyl)-alt-(3′,3′′-dimethyl-2,2′:5′,2′′-terthiophene)-5,5′′-diyl)). Examples of the n-type organic semiconductor include PC61BM ([6,6]-phenyl C61-butyric acid methyl ester). Alternatively, the active layer may be formed using materials such as P3HT:PC61BM and PTB7:PC71BM.

[0074] The hole transport layer is, for example, a metal oxide layer such as tungsten oxide (WO3) or molybdenum oxide (MoOx). The hole transport layer is formed as a vapor deposition film or a sputtering film. Alternatively, the hole transport layer may be formed by coating using a material such as PEDOT:PSS.

[0075] The electron transport layer, the active layer, and the hole transport layer that form the photodiode PD are continuously provided covering a plurality of lower electrodes 23. In other words, the photodiode PD includes a portion provided overlapping the lower electrode 23 and a portion provided on the organic insulating film 94 in a region not overlapping the lower electrode 23.

[0076] The upper electrode 24 is provided straddling a plurality of photodiodes PD. The upper electrode 24 is the anode electrode of the photodiode PD and is continuously formed across a plurality of detection elements PAA (photodiodes PD). The upper electrode 24 is formed of a light-transmissive conductive material such as, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

[0077] As described above, the detection device 1 of the present embodiment includes a substrate 21, a plurality of photodiodes PD provided on the substrate 21, a plurality of first switching elements Tr (transistors) provided corresponding to each of the plurality of photodiodes PD, a plurality of gate lines GCL extending in the first direction Dx, a plurality of signal lines SGL extending in a second direction Dy intersecting the first direction Dx, in a direction perpendicular to the substrate 21, a plurality of lower electrodes 23 provided between the transistor and the photodiode PD and provided corresponding to each of the plurality of photodiodes PD, an upper electrode 24 provided straddling the plurality of photodiodes PD, and a reflective layer 25 provided between the substrate 21 and the photodiode PD in a direction perpendicular to the substrate 21. The lower electrode 23 has an area smaller than the area defined by the plurality of gate lines GCL and the plurality of signal lines SGL, and the reflective layer 25 is provided between adjacent lower electrodes 23 in plan view.

[0078] Further, in the detection device 1 of the present embodiment, the first switching element Tr (transistor) includes a semiconductor layer 61, a gate electrode 64, and a source electrode 62, and the semiconductor layer 61, the gate electrode 64, and the source electrode 62 are laminated in this order in a direction perpendicular to the substrate 21. The reflective layer 25 is provided in the same layer as the source electrode 62.

[0079] According to this, in the detection device 1, the light L1 that has passed through the object to be detected Fg (see FIG. 2) is irradiated onto the photodiode PD. In the region overlapping with the lower electrode 23, the component of the light L1 that is not absorbed by the photodiode PD is reflected by the lower electrode 23. Then, a part of the reflected light L1a reflected by the lower electrode 23 is absorbed by the photodiode PD.

[0080] In the region that does not overlap with the lower electrode 23 (the region between adjacent lower electrodes 23), the light L1 that has passed through the photodiode PD, that is, the component of the light L1 that is not absorbed by the photodiode PD is reflected by the reflective layer 25. The reflected light L1b reflected by the reflective layer 25 travels upward (toward the photodiode PD side), and a part of the reflected light L1b is absorbed by the photodiode PD. In this way, the detection device 1 of the present embodiment can improve the utilization efficiency of the light L1 in the region between adjacent lower electrodes 23 by providing the reflective layer 25.

[0081] Further, since the outer edge portion of the reflective layer 25 is provided to overlap with the gate line GCL, the gap between the reflective layer 25 and the gate line GCL can be reduced in plan view. The reflective layer 25 can effectively reflect the light L1 in the region surrounded by the gate line GCL and the signal line SGL. As a result, the utilization efficiency of the light L1 can be improved. Further, the reflective layer 25 also functions as a light shielding layer that suppresses external light incident on the photodiode PD from the substrate 21 side. The detection device 1 can suppress the noise component caused by external light irradiated from between adjacent lower electrodes 23.

[0082] (Second Embodiment) FIG. 8 is a cross-sectional view schematically showing a cross-section of the detection device according to the second embodiment. In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals, and redundant descriptions are omitted.

[0083] In the above-described first embodiment, the configuration in which the reflective layer 25 is provided in the same layer as the source electrode 62 has been described. However, the present invention is not limited to this, and the reflective layer 25 may be provided in a layer different from the source electrode 62, that is, in any layer between the substrate 21 and the photodiode PD.

[0084] As shown in FIG. 8, in the detection device 1A according to the second embodiment, the reflective layer 25a is provided in a layer between the substrate 21 and the semiconductor layer 61 of the first switching element Tr in a direction perpendicular to the substrate 21. More specifically, the reflective layer 25a is provided on the undercoat film 91a. The undercoat film 91b is provided on the undercoat film 91a so as to cover the reflective layer 25a.

[0085] In the example shown in FIG. 8, the reflective layer 25a is provided in a region that does not overlap with the lower electrode 23, and is provided individually for each detection element PAA (photodiode PD). Although not shown in the figure, the reflective layer 25a is provided between adjacent lower electrodes 23 in the same manner as in FIG. 6 in a plan view. However, since the reflective layer 25a is provided in a layer different from the source electrode 62 (signal line SGL) and the gate electrode 64 (gate line GCL), there are fewer restrictions on the arrangement by these electrodes, wirings, etc. That is, the reflective layer 25a may be provided so as to overlap at least a part of the signal line SGL and the gate line GCL in a plan view (see FIGS. 6 and 10), or may be provided separately from the signal line SGL and the gate line GCL.

[0086] (Modification of the second embodiment) FIG. 9 is a cross-sectional view schematically showing a cross-section of a detection device according to a modified example of the second embodiment. As shown in FIG. 9, in a detection device 1B according to a modified example of the second embodiment, a reflection layer 25b is provided to extend from a region not overlapping with the lower electrode 23 to a region overlapping with the first switching element Tr and the lower electrode 23. In a region overlapping with the first switching element Tr, the reflection layer 25b is provided below the semiconductor layer 61 in a direction perpendicular to the substrate 21, that is, between the substrate 21 and the semiconductor layer 61.

[0087] The reflection layer 25b is formed in a region overlapping the entire semiconductor layer 61 and the lower electrode 23, and is also formed in a region overlapping at least a part of the signal line SGL. In this modified example, the reflection layer 25b also functions as a light-shielding layer that suppresses light incident on the semiconductor layer 61 from the substrate 21 side.

[0088] The reflection layer 25b may be provided to overlap at least a part of the signal line SGL and the gate line GCL in a plan view (see FIGS. 6 and 10), or may be provided separately from the signal line SGL and the gate line GCL. Further, the reflection layer 25b may be formed continuously across a plurality of detection elements PAA (photodiodes PD).

[0089] (Third Embodiment) FIG. 10 is a plan view schematically showing a detection device according to the third embodiment. FIG. 11 is a cross-sectional view taken along line XI-XI' of FIG. 10. As shown in FIGS. 10 and 11, in a detection device 1C according to the third embodiment, a reflection layer 25c is provided in the same layer as the gate electrode 64.

[0090] As shown in FIG. 10, the reflective layer 25c is formed continuously and integrally with the gate electrode 64 and the gate line GCL. The reflective layer 25c is connected to one gate line GCL located near the first switching element Tr, and is provided separately from the other gate line GCL located away from the first switching element Tr. Further, the reflective layer 25c is provided so as to overlap at least one of the signal lines SGL adjacent in the first direction Dx in a plan view. More specifically, the outer edge portion of the reflective layer 25c is provided so as to overlap with one signal line SGL adjacent to the first side 23s1 of the lower electrode 23.

[0091] In other words, the reflective layer 25c is provided to cover most of the region partitioned by the gate line GCL and the signal line SGL, and an opening is formed in a portion overlapping the semiconductor layer 61, the source electrode 62, and the drain electrode 63 of the first switching element Tr.

[0092] As shown in FIG. 11, the reflective layer 25c is provided between the gate insulating film 92 and the interlayer insulating film 93. That is, the reflective layer 25c and the gate electrode 64 are provided on the gate insulating film 92. The interlayer insulating film 93 is provided on the gate insulating film 92 so as to cover the gate electrode 64.

[0093] With such a configuration, in the present embodiment, the reflective layer 25c is provided to cover most of the region that does not overlap with the lower electrode 23, and can effectively reflect the light L1 transmitted through the photodiode PD.

[0094] (Fourth Embodiment) FIG. 12 is a plan view schematically showing a detection device according to the fourth embodiment. FIG. 13 is a cross-sectional view taken along line XIII-XIII' of FIG. 12. In FIG. 12, for ease of viewing the drawing, the illustration of the source electrode 62 and the reflective layer 25 (see FIG. 6) formed integrally with the source electrode 62 is omitted. As shown in FIGS. 12 and 13, the detection device 1D according to the fourth embodiment further includes a bottom gate line GCLB and a bottom gate electrode 65. In the detection device 1D, the reflective layer 25d is provided in the same layer as the bottom gate line GCLB and the bottom gate electrode 65.

[0095] As shown in FIG. 12, the bottom gate line GCLB is provided under the gate line GCL and extends in the first direction Dx along the gate line GCL. The bottom gate electrode 65 is connected to the bottom gate line GCLB and extends in a direction orthogonal to the bottom gate line GCLB. The two bottom gate electrodes 65 are arranged side by side in the first direction Dx and are provided so as to overlap the semiconductor layer 61. Further, the two bottom gate electrodes 65 are respectively provided under the gate electrode 64.

[0096] The reflective layer 25d is formed integrally and continuously with the bottom gate electrode 65 and the bottom gate line GCLB. The reflective layer 25d is connected to one bottom gate line GCLB at a position close to the first switching element Tr and is provided spaced apart from the other bottom gate line GCLB at a position away from the first switching element Tr. Further, the reflective layer 25d is provided so as to overlap at least one of the signal lines SGL adjacent in the first direction Dx in plan view. More specifically, the outer edge portion of the reflective layer 25d is provided so as to overlap one signal line SGL adjacent to the first side 23s1 of the lower electrode 23.

[0097] In other words, the reflective layer 25d is provided so as to cover most of the region partitioned by the gate line GCL and the signal line SGL, and an opening is formed in a portion overlapping the semiconductor layer 61, the source electrode 62, and the drain electrode 63 of the first switching element Tr.

[0098] As shown in FIG. 13, in the direction perpendicular to the substrate 21, the first switching element Tr is laminated in the order of the bottom gate electrode 65, the semiconductor layer 61, the gate electrode 64 (top gate electrode), the source electrode 62, and the drain electrode 63. That is, the first switching element Tr of the present embodiment has a dual gate structure.

[0099] As described above, in the detection device 1D, the reflective layer 25d is provided in the same layer as the bottom gate electrode 65. The bottom gate electrode 65 and the reflective layer 25d are provided on the undercoat film 91a. The undercoat film 91b is provided on the undercoat film 91a so as to cover the bottom gate electrode 65 and the reflective layer 25a. The bottom gate line GCLB is electrically connected to the gate line GCL at an arbitrary location, and a gate drive signal Vgcl having the same potential as the gate electrode 64 is supplied to the bottom gate electrode 65.

[0100] In a region that does not overlap with the lower electrode 23, the reflective layer 25 is provided on the reflective layer 25d via the undercoat film 91b, the gate insulating film 92, and the interlayer insulating film 93. The configurations of the source electrode 62 and the reflective layer 25 are the same as those in the first embodiment described above, and repeated description is omitted. Since the detection device 1D of this embodiment has two reflective layers 25 and 25d, the light L1 transmitted through the photodiode PD can be effectively reflected.

[0101] With such a configuration, the reflective layer 25d is provided so as to cover most of the region that does not overlap with the lower electrode 23, and the light L1 transmitted through the photodiode PD can be effectively reflected.

[0102] (Fifth Embodiment) FIG. 14 is a cross-sectional view schematically showing a cross-section of a detection device according to the fifth embodiment. As shown in FIG. 14, the detection device 1E according to the fifth embodiment has an inorganic insulating film 95 provided on an organic insulating film 94. The inorganic insulating film 95 is an inorganic insulating material such as a silicon nitride film or a silicon oxide film, for example. The organic insulating film 94 and the inorganic insulating film 95 are provided so as to cover a plurality of first switching elements Tr. The inorganic insulating film 95 covers the inner surface of the first contact hole CH1 formed in the organic insulating film 94 and has an opening in a region overlapping the bottom surface of the first contact hole CH1.

[0103] The lower electrode 23 and the photodiode PD are provided on the inorganic insulating film 95 and are electrically connected to the source electrode 62 of the first switching element Tr through the first contact hole CH1. That is, the inorganic insulating film 95 is provided between the organic insulating film 94 and the lower electrode 23.

[0104] In the present embodiment, the reflective layer 25e is provided between the organic insulating film 94 and the inorganic insulating film 95 in a region that does not overlap with the lower electrode 23. That is, in the region where the reflective layer 25e is provided, in the direction perpendicular to the substrate 21, the organic insulating film 94, the reflective layer 25e, the inorganic insulating film 95, the photodiode PD, and the upper electrode 24 are laminated in this order. The reflective layer 25e may be provided so as to overlap with the gate line GCL or the signal line SGL, as in the above-described embodiments.

[0105] In the detection device 1E according to the fifth embodiment, compared with the first to fourth embodiments described above, the reflective layer 25e is provided closer to the photodiode PD. That is, in the direction perpendicular to the substrate 21, the organic insulating film 94 is not provided between the photodiode PD and the reflective layer 25e, and the photodiode PD and the reflective layer 25e face each other through the inorganic insulating film 95 having a thickness thinner than that of the organic insulating film 94.

[0106] Thereby, the reflected light L1b reflected by the reflective layer 25e has the generation of stray light and the like suppressed and is efficiently returned to the photodiode PD side. Therefore, the detection device 1E can improve the utilization efficiency of the light L1.

[0107] Note that the reflective layer 25e of the present embodiment can be combined with the reflective layers 25, 25a, 25b, 25c, and 25d of the first to fourth embodiments described above. As an example, a reflective layer 25 (see FIG. 7) provided in the same layer as the source electrode 62 may be provided under the reflective layer 25e. Alternatively, the inorganic insulating film 95 of the present embodiment may be provided in the first to fourth embodiments described above.

[0108] In each of the above-described embodiments, an example has been described in which the lower electrode 23 of the photodiode PD is the cathode electrode of the photodiode PD and the upper electrode 24 is the anode electrode of the photodiode PD. However, the present invention is not limited to this, and the lower electrode 23 may be the anode electrode of the photodiode PD and the upper electrode 24 may be the cathode electrode of the photodiode PD.

[0109] (Sixth Embodiment) FIG. 15 is a cross-sectional view showing a schematic cross-sectional configuration of a detection device according to the sixth embodiment. In the first to fifth embodiments described above, the transmissive detection devices 1, 1A - 1E have been described, but the present invention is not limited to this. As shown in FIG. 15, the detection device 1F according to the sixth embodiment is a reflective detection device. Specifically, the two light sources LS are provided on the side of the detection object Fg such as a finger, and are arranged side by side in the first direction Dx with the detection object Fg interposed therebetween. The light L1 emitted from the light source LS travels in the first direction Dx and is reflected by the surface or inside of the detection object Fg. The light reflected by the detection object Fg is irradiated onto the photodiode PD. Thereby, the plurality of photodiodes PD can detect information regarding the detection object Fg based on the light L1 irradiated from the light source LS.

[0110] Note that the positions, numbers, etc. of the light sources LS shown in FIG. 15 are merely schematically shown, and can be appropriately changed according to the characteristics (detection sensitivity) required for the detection device 1F, the detection object, etc.

[0111] Although the preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments. The content disclosed in the embodiments is merely an example, and various changes can be made without departing from the gist of the present invention. Appropriate changes made without departing from the gist of the present invention also naturally belong to the technical scope of the present invention. At least one of various omissions, substitutions, and changes of components can be made without departing from the gist of each of the above-described embodiments and each modification.

Description of Reference Numerals

[0112] 1, 1A, 1B, 1C, 1D, 1E Detection Device 10 Sensor Unit 11 Detection Control Unit 15 Gate Line Drive Circuit 16 Signal Line Selection Circuit 21 Substrate 23 Lower Electrode 24 Upper Electrode 25, 25a, 25b, 25c, 25d, 25e Reflective Layer 40 Detection Unit 48 Detection Circuit 61 Semiconductor Layer 62 Source Electrode 63 Drain Electrode 64 Gate Electrode 65 Bottom Gate Electrode 94 Organic Insulating Film 95 Inorganic Insulating Film CH1 First Contact Hole PD Photodiode AA Detection Region GA Peripheral Region GCL Gate Line SGL Signal Line Tr First Switching Element

Claims

1. A substrate; A plurality of photodiodes provided on the substrate; a plurality of transistors provided corresponding to the plurality of photodiodes, respectively; A plurality of gate lines extending in a first direction; A plurality of signal lines extending in a second direction intersecting the first direction; a plurality of lower electrodes provided between the transistor and the photodiode in a direction perpendicular to the substrate, the lower electrodes corresponding to the plurality of photodiodes; an upper electrode provided across a plurality of the photodiodes; a reflective layer provided between the substrate and the photodiode in a direction perpendicular to the substrate; the lower electrode has an area smaller than an area defined by the plurality of gate lines and the plurality of signal lines; the reflective layer is provided between adjacent ones of the lower electrodes in a plan view, and has a shape in which a portion extending in the second direction between one of the signal lines adjacent to each other in the first direction and a first side of the lower electrode and a portion extending in the first direction between one of the gate lines adjacent to each other in the second direction and a second side of the lower electrode are continuous with each other; The reflective layer is provided so as to overlap the other of the gate lines adjacent to each other in the second direction and to be spaced apart from one of the signal lines adjacent to each other in the first direction in a plan view. Detection device.

2. an organic insulating film covering the plurality of transistors; an inorganic insulating film provided between the organic insulating film and the lower electrode; The reflective layer is provided between the organic insulating film and the inorganic insulating film. The detection device according to claim 1 .

3. The transistor includes a semiconductor layer, a gate electrode, and a source electrode; The reflective layer is provided between the substrate and the semiconductor layer in a direction perpendicular to the substrate. The detection device according to claim 1 .

4. The reflective layer is provided so as to overlap the other of the signal lines adjacent to each other in the first direction in a plan view. The detection device according to any one of claims 1 to 3.

5. The transistor includes a semiconductor layer, a gate electrode, and a source electrode; the semiconductor layer, the gate electrode, and the source electrode are laminated in this order in a direction perpendicular to the substrate; The reflective layer is formed continuously with the source electrode and is provided in the same layer as the source electrode. The detection device according to claim 1 .

6. The source electrode is provided so as to overlap the gate electrode.

6. The detection device according to claim 5.

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