Optoelectronic device

Abstract

To provide an at least partially transparent optoelectronic device, which provides an improved emission of light.SOLUTION: An optoelectronic device comprises a plurality of optoelectronic light sources arranged on a first layer, in particular an intermediate layer disposed between a cover layer and a carrier layer. The first layer is made of or at least includes an at least partially transparent material. Each optoelectronic light source of the plurality of optoelectronic light sources has an individual light converter for converting light emitted from a corresponding light source to emit converted light. The light converter of each optoelectronic light source is arranged on the first layer and / or on the corresponding optoelectronic light source.SELECTED DRAWING: Figure 58

Description

Technical Field

[0001] The present invention claims priority to DE Application No. 10 2019 133 451.9 filed on December 6, 2019, DK Application No. 10 2020 114 478.4 filed on February 21, 2020, DE Application No. 10 2020 114 482.2 filed on May 29, 2020, DE Application No. 10 2020 114 670.1 filed on May 29, 2020, DE Application No. 10 2020 116 479.3 filed on June 23, 2020, DE Application No. 10 2020 117 104.8 filed on June 29, 2020, DE Application No. 10 2020 125 429.6 filed on September 29, 2020, DE Application No. 10 2020 125 433.4 filed on September 29, 2020, DE10 2020 1227 194.8 filed on October 15, 2020, and DE Application No. 10 2020 1220 204.9 filed on October 15, 2020, and the disclosures of these are incorporated herein by reference in their entirety.

[0002] The present disclosure relates to optoelectronic devices, such as at least partially transparent panes or windows of vehicles.

Background Art

[0003] For example, there is a need to display information in a specific area of a vehicle. For example, the dashboard shows information important to the driver.

[0004] Patent Document 1 discloses a cover for an automobile roof having a layer stack. The layer stack includes a planar pane, a planar film, and an adhesive layer disposed between the pane and the film to fix the film to the pane. A plurality of micro light-emitting diodes are disposed in the adhesive layer. Patent Document 1 also discloses an automobile including an automobile roof having such a cover.

[0005] Patent Document 2 discloses a method for manufacturing a composite pane for an automobile. This method includes providing a first pane and a second pane. This method further includes a step of disposing a plastic film between the first pane and the second pane, and a step of disposing a light-emitting diode (LED) on the surface of the plastic film. Further, this method includes locally heating at least the region of the plastic film where the LED is located to a fluid state by a heat source located on the outer surface of the first pane or the second pane, or disposed away from the outer surface of the first pane or the second pane. In addition, this method includes displacing a predetermined amount of the plastic film to introduce the LED into the plastic film heated to a fluid state, and this method includes laminating the first pane and the second pane together with the interposed plastic film after introducing the LED into the plastic film.

[0006] Patent Document 3 discloses a laminated automotive glazing having an outer glass layer, an inner glass layer, at least one plastic intermediate layer between the outer glass layer and the inner glass layer, and at least one camera system. The camera system is laminated between the glass layers as an integral permanent part of the laminate.

[0007] Patent Document 4 discloses a vehicle laminate having an outer glass layer, at least an inner glass layer, at least one plastic bonding layer located between the outer glass layer and the inner glass layer, and at least one LED embedded in the plastic bonding layer. Substantially embedded in the plastic bonding layer are electric wires forming a circuit for supplying power to the LED.

Prior Art Documents

Patent Documents

[0008]

Patent Document 1

Patent Document 2

[0009] An object of the present invention is to provide an improved optoelectronic device, in particular, at least a partially transparent optoelectronic device that provides improved light emission. Also, in at least some aspects, the present invention aims to integrate a light source and / or a light sensor into at least partially transparent windows and panes, particularly for vehicles.

[0010] In some embodiments of the present invention, an optoelectronic device, for example, at least a partially transparent pane of a vehicle, comprises a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, and at least one, preferably a plurality of optoelectronic light sources, are disposed on at least one surface of the intermediate layer and / or at least partially embedded in the intermediate layer, the intermediate layer is adapted such that light emitted from the optoelectronic light sources spreads at least partially within and along the intermediate layer and exits the intermediate layer in a direction that penetrates the cover layer and / or the carrier layer at a distance not exceeding a preset distance for each optoelectronic light source.

[0011] Preferably, an LED (light-emitting diode) or a micro-LED (also called μLED), or an LED chip or a μLED chip is used as the light source. Preferably, each layer of the optoelectronic device is made of or at least contains a at least partially transparent material. Thus, the optoelectronic device can also be at least partially transparent.

[0012] A μLED is, for example, a small LED with an edge length of less than 70 μm, particularly less than 20 μm, especially in the range of 1 μm to 10 μm. Other ranges are 10 - 30 μm. Thereby, the surface area can be from several hundred μm 2 to several tens of μm 2 For example, a μLED can have an edge length of about 8 μm and a surface area of about 60 μm 2 In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is less than 30 μm 2 A general height of such μLEDs is, for example, in the range of 1.5 μm to 10 μm.

[0013] Advantageously, a micro - light - emitting diode chip (also called a μLED chip) is used as the light source. The micro - light - emitting diode can form a pixel or a sub - pixel and emit light of a selected color.

[0014] In some embodiments, the point light source is converted into a two - dimensional light source, particularly by using an intermediate layer.

[0015] In some embodiments, the optoelectronic device is at least partially transparent paint, particularly vehicle paint.

[0016] In some embodiments, the light provided by the light source can spread within and along the intermediate layer and exit the intermediate layer within a preset angular field of view, particularly substantially perpendicular to the intermediate layer. Thus, the light can be seen from a greater distance, for example, from a distance of 0.5 m or more.

[0017] In some embodiments, the intermediate layer can be a foil. The foil can be laminated or fixed to the cover layer and / or the carrier layer by an adhesive. The foil is elastic and can adapt to a non - planar contour or shape.

[0018] In some embodiments, the refractive index of the intermediate layer can be greater than the refractive index of the material surrounding the intermediate layer. Thereby, the intermediate layer can function as a light guide.

[0019] In some embodiments, the refractive index of the intermediate layer can be greater than the refractive index of the cover layer and / or the carrier layer, or the refractive index of the adhesive covering the intermediate layer on the side facing the carrier layer and / or the side facing the cover layer.

[0020] In some embodiments, a dispersion or scattering structure and / or a reflection structure can be formed on at least one surface of the intermediate layer and / or can be at least partially embedded in the intermediate layer. By using these elements, diffusion and / or emission of the emitted light can be achieved.

[0021] In some embodiments, the dispersion or scattering structure can be a diffusion center. The diffusion center is easy to provide. Also, the diffusion center can be arranged at a selected position, area, or volume, and light can be emitted at each of the respective positions, areas, or volumes.

[0022] In some embodiments, the diffusion concentration of the diffusion center can be preset such that the length of the mean free path of the light is greater than the thickness of the intermediate layer. This is an example of a parameter that is easy to preset.

[0023] In some embodiments, the dispersion or scattering structure can be formed in the intermediate layer by using, in particular, transparent particles, white particles, holes, density changes, air bubbles having a size (in particular about 2 μm) smaller than the wavelength of the emitted light. These scattering centers can be incorporated into the intermediate layer.

[0024] In some embodiments, the distributed or scattered structure can be arranged on the intermediate layer as a structured region and, in particular, can be structured by stamping, printing, and / or application of laser light. These are suitable ways to realize diffusion centers.

[0025] In some embodiments, the reflective structure can be formed near each optoelectronic component. The closer the reflective structure is arranged to the light emitter, the more light can be guided and spread within and along the intermediate layer.

[0026] In some embodiments, the reflective structure can be formed on the outer surface of the cover layer and / or the outer surface of the carrier layer. The outer surface faces away from the intermediate layer, while the inner surface faces towards the intermediate layer.

[0027] In some embodiments, the reflective structure can be formed on the outside of the cover layer and / or the outside of the carrier layer. In particular, the reflective structure can be formed on the outer surface of the cover layer and / or the outer surface of the carrier layer. Thus, the reflective structure can be formed at a later stage of the manufacturing process, further independently of the manufacturing of the optoelectronic device.

[0028] In some embodiments, the reflective structure can be a mirror and / or a metal coating and / or a dielectric coating.

[0029] In some embodiments, the reflective structure can directly cover at least one of the main surfaces of the optoelectronic light source. Thereby, presetting can already be carried out during the manufacture of the light source.

[0030] In some embodiments, one, two, or a combination of three or more additional cover layers and intermediate layers can be formed, whereby each intermediate layer has one or more optoelectronic light sources. Each intermediate layer can include a light source capable of emitting light of a selected color, particularly any one of red, green, or blue. Thus, an optoelectronic device that emits RGB (i.e., red, green, and blue) light can be obtained by using three intermediate layers, namely, an intermediate layer having a light source that emits red light, an intermediate layer having a light source that emits green light, and an intermediate layer having a light source that emits blue light.

[0031] In some embodiments, the light emitted from each optoelectronic light source can be at least partially distributed within and along the intermediate layer and can exit the intermediate layer at a preset distance for each optoelectronic light source. Inside each intermediate layer, a dispersion or scattering structure, particularly having structured scattering particles, is formed. Thus, the light can be accurately guided.

[0032] In some embodiments, the dispersion or scattering structure can form two different two-dimensional indicator regions, particularly uniform symbols, colors, or animations.

[0033] In some embodiments, the dispersion or scattering structures of each intermediate layer are offset from each other along the intermediate layer. Thus, the light extraction of each dispersion or scattering structure can be performed with little or no influence from adjacent dispersion or scattering structures.

[0034] In some embodiments, a converter material can be at least partially incorporated into the intermediate layer(s). The position of the converter material can define the region of visible light. The diffusion and emission of light can be accurately preset.

[0035] In some embodiments, the optoelectronic light source can be an LED that is a volume emitter or a surface emitter. The light sources can be individually controlled. Thus, the light distribution can be controlled in the optoelectronic device. The individual control of the light sources can be achieved, for example, by individually controlling the current supplied to each optoelectronic light source.

[0036] In some embodiments, the optoelectronic light source, particularly an LED, can have a size of less than 300 μm, particularly less than 150 μm. Due to such a spatial extent, the optoelectronic light source is not visible to the human eye.

[0037] In some embodiments, the optoelectronic light source can be a chip or a packaged chip. A pure chip can be incorporated into an intermediate layer. A packaged chip can be handled in the manufacturing process.

[0038] In some embodiments, for example, the electrical conductor paths used to supply electricity to the light source can be made of a transparent material and / or can have a width of less than 300 μm, particularly less than 150 μm. Due to such a spatial extent, the conductor paths are not visible to the human eye. Thus, the field of view through the optoelectronic device is not obstructed by the conductor paths.

[0039] In some embodiments, the optoelectronic device can be configured to be used as a vehicle window, a cover for a vehicle lamp, a cover for a vehicle signal lamp, a mirror glass, or an element of vehicle body lighting. The optoelectronic device can have various application fields. In the "switched on" mode, the device can, for example, illuminate and change the appearance and / or color of the original lacquer.

[0040] In some embodiments, the intermediate layer, the cover layer, and / or the carrier layer can comprise or consist of glass or other at least partially transparent materials, such as, for example, methacrylic resin (PMMA) and / or polycarbonate (PC).

[0041] In some embodiments, the dispersion structure can include titanium dioxide (TiO 2 ) and / or zirconium dioxide (ZrO 2 ). These materials provide efficient diffusion characteristics.

[0042] In some embodiments, the material of the reflective structure can include aluminum and / or silver or dielectric materials and / or distributed Bragg reflectors.

[0043] In some embodiments, the material of the conductor path can include indium tin oxide and / or silver.

[0044] In some embodiments, the intermediate layer can include a transparent plastic material, particularly polyethylene.

[0045] In some embodiments, an optoelectronic device, such as, for example, at least partially transparent paint for a vehicle, has a first layer, particularly a thermoplastic substrate, and at least one electronic or optoelectronic component is partially or fully embedded in this first layer.

[0046] By partially or fully embedding at least one optoelectronic component in the first layer, the topography of the optoelectronic device can be reduced and the subsequent processes of the optoelectronic device can be simplified because it can be technically difficult to balance optoelectronic components disposed on the surface of the first layer (not embedded in the surface of the first layer).

[0047] In some embodiments of the present invention, an optoelectronic device, for example, at least a partially transparent pane of a vehicle, comprises an intermediate layer disposed between a first layer, in particular a cover layer and a carrier layer, and at least one electronic or optoelectronic component at least partially or completely embedded in the first layer, and at least one structured conductor layer, and has a first portion of the conductor layer is disposed on the upper surface of the first layer, a second portion of the conductor layer is disposed on the upper surface of the electronic or optoelectronic component and is in contact with an electrical contact of the electronic or optoelectronic component, and the electrical contact, in particular a contact pad, is disposed on the upper surface of the electronic or optoelectronic component, a boundary region is located between the upper surface of the electronic or optoelectronic component and the adjacent upper surface of the first layer, an intermediate portion of the conductor layer extends across the boundary region and interconnects the first portion of the conductor layer and the second portion of the conductor layer.

[0048] Preferably, at least one electronic or optoelectronic component is at least partially or completely embedded in a first layer, in particular, this first layer is an intermediate layer disposed between a cover layer and a carrier layer. The conductor layer is disposed on the upper surface of the first layer, on the upper surface of the electronic or optoelectronic component and is in contact with an electrical contact of the electronic or optoelectronic component. Further, the conductor layer extends across a boundary region, in particular a gap between the shell surface of the electronic or optoelectronic component and the first layer, and thus fills this gap. The boundary region, in particular the gap, is preferably small because the distance filled by the conductor layer may be limited by the steps of disposing the conductor layer on the upper surface of the first layer, on the upper surface of the electronic or optoelectronic component, and on the electrical contact of the electronic or optoelectronic component.

[0049] The formulation that something is disposed on something does not necessarily mean that it is directly disposed on something, and may include other elements disposed therebetween. Thus, the formulation that something is disposed on something can also be understood as being indirectly disposed above something. In particular, the formulation that a conductor layer is disposed on the upper surface of a first layer can be understood as the conductor layer being directly disposed on the upper surface of the first layer, or as the conductor layer being disposed above the upper surface of the first layer, although other elements may be disposed between the conductor layer and the upper surface of the first layer.

[0050] The first layer, particularly the intermediate layer, is preferably at least partially transparent and is preferably disposed between the cover layer and the carrier layer, and at least one of the cover layer and the carrier layer is at least partially transparent. Preferably, each layer of the optoelectronic device is made of or at least includes a material that is at least partially transparent. Thus, the optoelectronic device can be at least partially transparent.

[0051] In some embodiments, the intermediate layer can be a foil. The foil can be laminated or fixed to the cover layer and / or the carrier layer by an adhesive. The foil can be elastic and thus can adapt to a non-planar contour or shape.

[0052] In some embodiments, the optoelectronic device is at least partially transparent paint, particularly vehicle paint.

[0053] In some embodiments, at least one electronic or optoelectronic component is completely embedded in the first layer such that the upper surface of the electronic or optoelectronic component is disposed within a reference plane that extends over the upper surface of the first layer. In other words, the upper surface of the electronic or optoelectronic component and the upper surface of the first layer are disposed in the same plane and form a flat upper surface.

[0054] In some embodiments, at least one electronic or optoelectronic component is partially embedded in the first layer such that the upper surface of the electronic or optoelectronic component protrudes from the upper surface of the first layer, in particular by a height H. The height H is preferably at most one third of the thickness of the electronic or optoelectronic component. Thus, the electronic or optoelectronic component can be partially embedded in the first layer such that at most one third of the thickness of this electronic or optoelectronic component protrudes from the upper surface of the first layer.

[0055] In some embodiments, the boundary region has a gap between the shell surface of the electronic or optoelectronic component and the side surface of the first layer. The side surface faces the shell surface, and the gap preferably extends circumferentially around the electronic or optoelectronic component surrounding the shell surface. The shell surface is preferably formed by the outer surface of the electronic or optoelectronic component, excluding the upper surface of the electronic or optoelectronic component and the bottom surface of the electronic or optoelectronic component opposite the upper surface.

[0056] In some embodiments, the first layer has at least one recess, and the side surface of the first layer facing the shell surface of the electronic or optoelectronic component is preferably formed by the recess of the first layer. The electronic or optoelectronic component is preferably arranged in the recess of the first layer, and thus, the boundary region and the gap can be formed respectively by the distance between the electronic or optoelectronic component arranged in the recess of the first layer and the side surface of the recess of the first layer.

[0057] In some embodiments, the gap has a conical cross-section. In particular, the distance between the shell surface and the side surface of the first layer facing the shell surface of the electronic or optoelectronic component is larger in a plane extending on the upper surface of the first layer than in a plane below the plane extending on the upper surface of the first layer and parallel to the plane extending on the upper surface of the first layer.

[0058] In some embodiments, the gap has a width of less than 10 to 15 μm. In particular, the gap has a width of less than 10 to 15 μm in the plane extending on the upper surface of the first layer. Thus, the intermediate portion of the conductor layer extending beyond the boundary region can extend over a distance of 10 to 15 μm or less. This can be advantageous because the step of arranging the structured conductor layer such that the first portion of the conductor layer is disposed on the upper surface of the first layer, the second portion of the conductor layer is disposed on the upper surface of the electronic or optoelectronic component, the intermediate portion of the conductor layer extends beyond the boundary region, in particular the gap, and interconnects the first portion and the second portion of the conductor layer, can be limited by the maximum distance that can be filled by the intermediate portion of the conductor layer.

[0059] In some embodiments, the gap is filled with a filler material, in particular an adhesive. Optionally, the accumulation of the filler material is disposed on the filled gap, in particular on the plane extending on the upper surface of the first layer. This can be advantageous because when the electronic or optoelectronic component protrudes from the upper surface, the step of arranging the structured conductor layer such that the first portion of the conductor layer is disposed on the upper surface of the first layer, the second portion of the conductor layer is disposed on the upper surface of the electronic or optoelectronic component, the intermediate portion of the conductor layer extends beyond the boundary region, in particular the gap, and interconnects the first portion and the second portion of the conductor layer, can be improved.

[0060] The filler material can have a planarization layer to provide a flat surface of the filler material on the plane extending on the upper surface of the first layer. When the upper surface of the electronic or optoelectronic component is in the same plane as the upper surface of the first layer, the step of arranging the structured conductor layer such that the first portion of the conductor layer is disposed on the upper surface of the first layer, the second portion of the conductor layer is disposed on the upper surface of the electronic or optoelectronic component, the intermediate portion of the conductor layer extends beyond the boundary region, in particular the gap, and interconnects the first portion and the second portion of the conductor layer, can be further improved.

[0061] In some embodiments, the filling material is disposed between the first layer and the bottom surface of the electronic or optoelectronic component, and the bottom surface of the electronic or optoelectronic component is on the side opposite to the top surface of the electronic or optoelectronic component. The filling material can, in particular, contain or consist of an adhesive for fixing the electronic or optoelectronic component to the first layer. Further, the filling material can contain or consist of a temporary adhesive that at least partially or completely evaporates in the process of at least partially or completely embedding the electronic or optoelectronic component in the first layer.

[0062] In some embodiments, the filling material can form a fillet weld between the top surface of the first layer and the shell surface of the electronic or optoelectronic component. In particular, the filling material in the form of a fillet weld can be partially disposed within the gap and can partially form a fillet weld between the top surface of the first layer and the shell surface.

[0063] In some embodiments, a dielectric layer, particularly a dielectric intermediate layer, is disposed between the structured conductor layer and the first layer and / or between the structured conductor layer and the top surface of the electronic or optoelectronic component. Such a dielectric layer serves to prevent a short circuit between the structured conductor layer and at least one of the first layer and the top surface of the electronic or optoelectronic component.

[0064] In some embodiments, the first layer contains at least one of the following materials, particularly plastic: polyethylene (PE), polystyrene (PS), polyvinyl chloride (PVC), polypropylene (PP), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), thermoplastic polyurethane (TPU), thermoplastic polyimide (TPI), acrylonitrile butadiene styrene (ABS), polyphthalamide (PPA), polycarbonate (PC), polyamide (PA), polyphenylene sulfide (PPS), polyether ether ketone (PEEK).

[0065] In some embodiments, at least one structured conductor layer is used, for example, to supply electricity to at least one electronic or optoelectronic component, can be made of a transparent material, and / or can have electrical traces with a width of less than 300 μm, particularly less than 150 μm. Due to such a spatial extent, the structured conductor layer is invisible to the human eye. Thus, the field of view through the optoelectronic device may not be obstructed by the structured conductor layer.

[0066] In some embodiments, the material of at least one structured conductor layer can include indium tin oxide and / or silver. In some embodiments, the structured conductor layer comprises or consists of a metal, particularly comprising or consisting of one of copper, silver, and gold.

[0067] In some embodiments, the first layer is a light guiding layer, and the refractive index of the first layer can be greater than the refractive index of the material surrounding the first layer.

[0068] In some embodiments, the refractive index of the first layer can be greater than the refractive index of the cover layer and / or the carrier layer, and / or the refractive index of the adhesive covering the first layer on the side facing the carrier layer and / or the side facing the cover layer. Thus, total internal reflection and related light guiding within the first layer can be achieved.

[0069] In some embodiments, at least one structured conductor layer is two or more structured conductor layers arranged on top of each other, and adjacent conductor layers are separated from each other by at least one separation layer (e.g., a polyimide layer, etc.). Optionally, each conductor layer includes one or more conductive vias filled with a dielectric material and includes conductor paths connecting different conductor layers. Thus, a multilayer of a redistribution layer (RDL) and a polyimide layer (PI) can be provided.

[0070] In some embodiments, a second layer, particularly a first thermal release film or laminate, is disposed on a surface of the first layer opposite the top surface. A carrier layer, particularly a PET carrier layer, can be disposed on the second layer on the side opposite the first layer, and optionally, a third layer, particularly a second thermal release film or a photoresist layer, can be disposed on the carrier layer on the side opposite the second layer, and optionally, a temporary carrier layer can be disposed on the third layer on the side opposite the carrier layer.

[0071] In some embodiments, an electronic chip, such as an integrated circuit (IC), is disposed on a structured conductor layer, or particularly on a multilayer stack of a redistribution layer (RDL) and a polyimide layer (PI).

[0072] In some embodiments, an optoelectronic component includes at least one of the following components: an LED, a μLED, a flip-chip LED, a thin-film flip-chip LED, an IC chip, an optical sensor, a thermal sensor, a mechanical sensor, a resistor, a coil, a capacitor, and a subassembly having a selection of these components.

[0073] Preferably, an LED (light-emitting diode) or a micro-LED (also called a μLED), or an LED chip or a μLED chip, or a flip-chip LED or a thin-film flip-chip LED is used as the optoelectronic component. Preferably, each layer of the optoelectronic device is made of or at least includes a material that is at least partially transparent. Thus, the optoelectronic component can also be at least partially transparent.

[0074] Advantageously, a micro light-emitting diode chip (also called a μLED chip) is used as the optoelectronic component. The micro light-emitting diode can form a pixel or a sub-pixel and emit light of a selected color.

[0075] A μLED is, for example, a small LED with an edge length of less than 70 μm, particularly less than 20 μm, especially in the range from 1 μm to 10 μm. Other ranges are from 10 to 30 μm. Thereby, the surface area can be several hundred μm 2 ~ several tens of μm 2 For example, a μLED can have an edge length of about 8 μm and a surface area of about 60 μm 2 In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is less than 30 μm 2 . A general height of such μLEDs is, for example, in the range of 1.5 μm to 10 μm.

[0076] In some embodiments, an electronic chip (e.g., an integrated circuit (IC), etc.), an optical sensor, a thermal sensor, a mechanical sensor, or a subassembly having a selection of these electronic or optoelectronic components can be at least partially or completely embedded in the first layer.

[0077] In some embodiments, a method for manufacturing an optoelectronic device, particularly at least partially transparent paint, for example, of a vehicle, comprises providing at least one electronic or optoelectronic component on the upper surface of an intermediate layer disposed between a first layer, particularly a cover layer and a carrier layer; at least partially or completely embedding the at least one electronic or optoelectronic component in the first layer; providing a structured conductor layer, wherein a first portion of the conductor layer is disposed on the upper surface of the first layer, a second portion of the conductor layer is disposed on the upper surface of the electronic or optoelectronic component, and an intermediate portion of the conductor layer extends across a boundary region to interconnect the first portion of the conductor layer and the second portion of the conductor layer, and providing the structured conductor layer. It has.

[0078] The second part of the conductor layer can be in contact with an electrical contact of an electronic or optoelectronic component located on the upper surface of the electronic or optoelectronic component, and the boundary region can be located between the upper surface of the electronic or optoelectronic component and the adjacent upper surface of the first layer.

[0079] In some embodiments, the step of at least partially or completely embedding at least one electronic or optoelectronic component in the first layer further includes locally heating the first layer and, in particular simultaneously, pushing the electronic or optoelectronic component, preferably in the same region where the first layer is locally heated, onto the upper surface of the first layer.

[0080] In some embodiments, the step of at least partially or completely embedding at least one electronic or optoelectronic component in the first layer includes heating the electronic or optoelectronic component and, in particular simultaneously, pushing the electronic or optoelectronic component onto the upper surface of the first layer. This step can be carried out, for example, by using a heated stamp that is adapted to pick up the electronic or optoelectronic component, heat the component, place the component at each position on the upper surface of the first layer, and push the component into the first layer at each such position.

[0081] In some embodiments, the step of at least partially or completely embedding at least one electronic or optoelectronic component in the first layer includes heating the first layer to a temperature just below the softening temperature of the material of the first layer, heating the electronic or optoelectronic component, and, in particular simultaneously, pushing the electronic or optoelectronic component onto the upper surface of the first layer.

[0082] In some embodiments, the step of at least partially or completely embedding at least one electronic or optoelectronic component in the first layer includes creating a recess by deeply etching at least a part of the first layer and pushing the electronic or optoelectronic component into the recess. In particular, the deep etching tool can be arranged on the surface of the first layer opposite to the upper surface, and at least a part of the first layer can be deeply etched in the direction of the deep etching tool. Thereby, at least one recess is created in the first layer, and the electronic or optoelectronic component is pushed into this recess.

[0083] In some embodiments, the step of arranging the first part, the second part, and the intermediate part of the structured conductor layer includes a so-called PICOS (Planar Interconnect On Substrate) process. This PICOS process can have, for example, the following steps. Apply a seed layer, particularly a titanium-copper alloy, to the upper surface of at least one electronic or optoelectronic component, and / or the upper surface of the first layer, and / or the boundary region, and / or the dielectric layer. Next, apply a photoresist layer to the seed layer and structure the photoresist layer so that the regions of the seed layer are exposed. Subject the exposed regions of the seed layer to galvanic plating and electrodeposit copper-titanium on the exposed regions of this seed layer. Remove the regions of the photoresist layer and the underlying seed layer left by the structuring. Also, the step of activating the seed layer and the step of applying the photoresist layer to be structured next can be interchanged. Thus, galvanic plating can be performed on a larger surface, and then structuring can be performed.

[0084] Through this procedure, the electronic or optoelectronic component can be "framed" in the structured conductor layer, so that both the mechanical stability and the electrical interconnection of at least one electronic or optoelectronic component can be ensured using the PICOS process.

[0085] In some embodiments, the step of disposing the first portion, the second portion, and the intermediate portion of the structured conductor layer includes a spraying step. For example, silver or copper nanotube ink is sequentially or concurrently and locally applied to the upper surface of at least one electronic or optoelectronic component and / or the upper surface of the first layer and / or the boundary region and / or the dielectric layer to electrically interconnect at least one electronic or optoelectronic component.

[0086] In some embodiments, the step of disposing at least one electronic or optoelectronic component on the upper surface of the first layer includes adhering at least one electronic or optoelectronic component to the upper surface of the first layer, particularly using an adhesive. The adhesive can be disposed between the electronic or optoelectronic component and the upper surface of the first layer, or a fillet weld can be formed between the upper surface of the first layer and the shell surface of the electronic or optoelectronic component. In some embodiments, the adhesive can be a temporary adhesive that at least partially or completely evaporates during the step of at least partially or completely embedding at least one electronic or optoelectronic component in the first layer.

[0087] In some embodiments, a method of manufacturing an optoelectronic device, particularly an at least partially transparent pane, for example of a vehicle, further includes the step of disposing a dielectric layer between the structured conductor layer and the first layer and / or between the structured conductor layer and the upper surface of the electronic or optoelectronic component. Such a dielectric layer can prevent a short circuit between the structured conductor layer and at least one of the first layer and the upper surface of the electronic or optoelectronic component.

[0088] In some embodiments, a method of manufacturing an optoelectronic device, particularly an at least partially transparent pane, for example of a vehicle, further includes the step of disposing an integrated circuit (IC) on the structured conductor layer.

[0089] In some embodiments of the present invention, an optoelectronic device, for example, at least a partially transparent pane of a vehicle, has a carrier layer and two or more layer segments, in particular a cover layer and an intermediate layer segment arranged between the carrier layer and the cover layer. At least one optoelectronic component is arranged in at least one of the layer segments, the layer segments are arranged adjacent to each other on the carrier layer, and adjacent layer segments are mechanically connected to each other.

[0090] In some embodiments, the layer segments are connected to each other such that the joint regions between the layer segments are at least almost invisible. Thus, the single layer segments are at least almost invisible in the finished optoelectronic device.

[0091] The mechanical connection between adjacent layer segments can be associated with adjacent layer segments that are thermally melted together at their adjacent boundary regions and thus mechanically connected to each other. Thus, the step of mechanically connecting adjacent layer segments can include melting the adjacent boundary regions of the layer segments.

[0092] The layer segments make it possible to form a larger layer, for example, a so-called intermediate layer, on the carrier layer. Thus, by using layer segments arranged adjacent to each other on the carrier layer, a large surface area corresponding to the larger layer can be formed.

[0093] The layer segments can rather be thin and flexible. Thus, the layer segments can consist of a more delicate material (for example, foil material, etc.). Using smaller layer segments and constructing a larger layer on the carrier layer from such layer segments enables the simplification of the manufacturing process because smaller-sized layer segments are easier to handle than larger layers. Furthermore, arranging the layer segments on the curved surface of the carrier layer can be easier than arranging a larger single layer.

[0094] In some embodiments, the optoelectronic device has a carrier layer and a plurality of layer segments, and at least one optoelectronic component is disposed in at least one of the layer segments. The layer segments are disposed adjacent to each other on the carrier layer, and adjacent layer segments are mechanically connected to each other.

[0095] At least one optoelectronic component can be disposed on at least one layer segment. In some embodiments, at least one optoelectronic component is disposed on each layer segment, on many layer segments, or simply on one layer segment. Thus, there may be layer segments on which no optoelectronic component is disposed and / or layer segments on which one or more optoelectronic components are disposed.

[0096] In some embodiments, the optoelectronic device forms at least a partially transparent pane of a vehicle, particularly the windshield or window of a vehicle. Thus, the pane, particularly the windshield or window, has at least one optoelectronic component to at least partially illuminate the pane and / or to display information on at least a portion of the pane.

[0097] The optoelectronic device can be, for example, a headliner or, for example, as an outer surface of a vehicle, a part of another surface. Thus, the optoelectronic device can have a three-dimensional shape and / or can be disposed on a curved surface. Thus, the headliner or outer surface has at least one optoelectronic component to at least partially illuminate the headliner or outer surface and / or to display information on at least a portion of the headliner or outer surface.

[0098] The production of small layer segments can be particularly easy and cost-effective, especially when compared to a complete layer of the size of a vehicle's windshield. Thus, by arranging two or more layer segments adjacent to each other on a carrier layer, a simpler and more cost-effective method for manufacturing optoelectronic devices, especially those with particularly large dimensions, can be provided. Furthermore, arranging layer segments adjacent to each other on a carrier layer having, for example, a three-dimensional shape can be made easier, as if the layer segments were the same size as the carrier layer.

[0099] In some embodiments, the optoelectronic device has at least one electrical bridge element that extends at least between two adjacent layer segments. The two layer segments each have a conductor layer segment, and the electrical bridge element interconnects at least the conductor layer segments of the two layer segments. In other words, the electrical bridge element can extend between a first layer segment and a second layer segment adjacent to the first layer segment. The first layer segment has a first conductor layer segment, and the second layer segment has a second conductor layer segment. The electrical bridge element interconnects the first conductor layer segment with the second conductor layer segment.

[0100] At least one bridge element can electrically interconnect at least two adjacent layer segments. The at least two layer segments can each have a conductor layer segment, and the electrical bridge element can interconnect the conductor layer segments of the at least two layer segments.

[0101] In some embodiments, each layer segment is electrically connected to an adjacent layer segment, at least by an electrical bridge element. Thus, the conductor layer segments on a layer segment can be connected to the conductor layer segments on other layer segments by using the electrical bridge element.

[0102] In some embodiments, the layer segment is flexible and / or bendable. Thus, in the case of the surface of a three-dimensional shaped carrier layer, the layer segment can be disposed on the surface of the carrier layer and conform to the three-dimensional shape of the surface of the carrier layer. If the optoelectronic device is in a three-dimensional shape after the layer segment is disposed on the carrier layer, the layer segment is bendable, so the risk of damage to the layer segment is extremely low.

[0103] In some embodiments, the layer segment has a square or rectangular form, and preferably has a length of at least about 125 mm and a width of at least about 70 mm.

[0104] In some embodiments, the layer segment can have the form of a stripe, particularly preferably a rectangular stripe with a length in the range of 1 cm to 100 cm, preferably in the range of 10 cm to 40 cm, and a width in the range of 1 cm to 100 cm, preferably in the range of 10 cm to 40 cm.

[0105] However, the layer segment can be in other suitable forms. For example, the layer segment can have the form of a regular polygon such as a triangle, hexagon, or octagon.

[0106] In some embodiments, the layer segment is at least partially transparent, and optionally, the layer segment is disposed between the cover layer and the carrier layer. Also, at least one of the cover layer and the carrier layer can be at least partially transparent. Thus, the optoelectronic device can be at least partially transparent.

[0107] In some embodiments, the layer segment comprises or consists of a material such as, for example, polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA). In particular, the layer segment can be a foil made of a foil material such as, for example, polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA). The foil is elastic and can adapt to a non-planar contour or shape.

[0108] The layer segment can comprise or consist of other plastics, in particular, preferably, other resins having strong bonding properties, optical transparency, adhesiveness to many surfaces, toughness, and flexibility.

[0109] In some embodiments, the layer segment can be laminated or fixed to the carrier layer by an adhesive. Thus, a mechanical connection between the layer segments can be provided, for example, by fixing the layer segments to the carrier layer.

[0110] In some embodiments, the carrier layer is at least partially transparent. In particular, the carrier layer can comprise or consist of glass or other at least partially transparent materials such as, for example, methacrylate (PMMA) and / or polycarbonate (PC).

[0111] In some embodiments, at least one optoelectronic component can be an LED, which is a volume emitter or a surface emitter. At least one optoelectronic component can be individually controlled. Thus, the light distribution can be controlled in the optoelectronic device. The individual control of at least one optoelectronic component can be achieved, for example, by individually controlling the current supplied to each optoelectronic component.

[0112] In some embodiments, at least one optoelectronic component, in particular an LED, can be less than 300 μm, in particular less than 150 μm. Due to such a spatial extent, at least one optoelectronic component is invisible to the human eye.

[0113] In some embodiments, a micro-LED (also referred to as μLED) or μLED chip is used as an optoelectronic component. A μLED is, for example, a small LED with an edge length of less than 70 μm, particularly less than 20 μm, and particularly in the range of 1 μm to 10 μm. Another range is 10 - 30 μm. Thereby, the surface area can be from several hundred μm 2 to several tens of μm 2 For example, a μLED can have an edge length of about 8 μm and a surface area of about 60 μm 2 In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is less than 30 μm 2 The general height of such μLEDs is, for example, in the range of 1.5 μm to 10 μm.

[0114] A micro light-emitting diode chip (also referred to as a μLED chip) can be used as an optoelectronic component. The micro light-emitting diode can form a pixel or a sub-pixel and emit light of a selected color.

[0115] Optoelectronic components such as LEDs or μLEDs may not be packaged. Thus, the optoelectronic component can be a bare die.

[0116] In some embodiments, the electrical bridge element has at least a partially transparent and / or flexible tape. Optionally, the tape has at least one conductor path for interconnecting conductor layer segments of two adjacent layer segments. Such a transparent and / or flexible tape having at least one conductor path can be provided, for example, with the aid of an inkjet process.

[0117] In some embodiments, the electrical bridge element is provided on the cover layer. The electrical bridge element can have the form of a conductor path. The cover layer is disposed on the layer segment after the layer segment is disposed on the carrier layer. Thereafter, the electrical bridge element on the cover layer interconnects the conductor layer segments of two adjacent layer segments.

[0118] In some embodiments, a planarizing layer is disposed on the layer segment or on the cover layer. The planarizing layer can comprise or consist of, for example, a material such as polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA). In particular, the planarizing layer can be a foil made of a material such as polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA). Alternatively, the planarizing layer can comprise or consist of other plastics, in particular other resins having preferably strong bonding properties, optical transparency, adhesion to many surfaces, toughness, and flexibility.

[0119] In some embodiments, a method of manufacturing a photoelectronic device, in particular at least partially transparent pane, for example of a vehicle, comprises arranging two or more layer segments adjacent to one another on a carrier layer. At least one optoelectronic component can be arranged on at least one of said layer segments, and the method comprises the following steps mechanically connecting the adjacent layer segments to one another; arranging at least one electrical bridge element, the bridge element extending between two of the adjacent layer segments, the two layer segments each having a conductor layer segment, and arranging the at least one electrical bridge element so that the electrical bridge element interconnects the conductor layer segments of the two layer segments; and further comprises at least one of the following.

[0120] In some embodiments, the step of mechanically connecting adjacent layer segments to each other is performed before arranging at least one electrical bridge element such that the electrical bridge element extends between two adjacent layer segments. Thus, a mechanical connection between adjacent layer segments is made before an electrical interconnection is made between two adjacent layer segments.

[0121] In some embodiments, the step of arranging at least one electrical bridge element such that the electrical bridge element extends between two adjacent layer segments is performed before the step of mechanically connecting adjacent layer segments to each other. Thus, an electrical connection between adjacent layer segments is made before a mechanical connection is made between adjacent layer segments. By arranging at least one electrical bridge element such that the electrical bridge element extends between two adjacent layer segments, at least a slight mechanical connection can already be provided, and the mechanical connection can be strengthened by a subsequent step of mechanically connecting adjacent layer segments to each other.

[0122] In some embodiments, only the step of mechanically connecting adjacent layer segments to each other is performed, and in some embodiments, only the step of arranging at least one electrical bridge element such that the electrical bridge element extends between two adjacent layer segments is performed.

[0123] In some embodiments, the step of mechanically connecting adjacent layer segments to each other includes the step of at least partially melting opposing edge regions of adjacent layer segments, particularly using a laser or a heating device (such as an autoclave or a hot plate). In particular, the step of mechanically connecting adjacent layer segments to each other is performed by laser welding. In some embodiments, the step of mechanically connecting adjacent layer segments to each other includes the step of uniformly melting entire adjacent layer segments. This is preferably done by using a heating device (such as an autoclave or a hot plate).

[0124] In some embodiments, the layer segments are arranged adjacent to each other on a carrier layer such that adjacent layer segments are spaced apart from each other by a predetermined distance, particularly before the step of mechanically connecting adjacent layer segments to each other is performed. Optionally, the predetermined distance ranges from 0 to 1500 μm. In particular, the predetermined distance depends on the flow behavior of the material of the adjacent layer segments.

[0125] In some embodiments, the layer segments form a uniform flat layer, particularly after the step of mechanically connecting adjacent layer segments to each other is performed.

[0126] In some embodiments, the step of disposing at least one electrical bridge element includes an inkjet process. Thus, an ink, for example, silver or copper nanotube ink, is applied sequentially or in parallel and locally on the upper surface of the conductor layer segments of adjacent layer segments.

[0127] In some embodiments of the present invention, a method for manufacturing an optoelectronic device, for example, at least partially transparent paint for a vehicle, includes the following steps: disposing at least one optoelectronic component on the upper surface of a first layer, particularly an intermediate layer disposed on or between a cover layer and a carrier layer; providing a conductor layer on the upper surface and on the at least one optoelectronic component; structuring the conductor layer such that the resulting structured conductor layer includes an electrical conductor path for supplying electricity to the at least one optoelectronic component by use of the structured conductor layer; and including.

[0128] For example, after providing a conductor layer over a wide area of the upper surface of the first layer, by structuring the conductor layer, a cost-effective production process with relatively few process steps can be provided for many formats of optoelectronic devices. Thus, the manufacturing cost increases according to the number of chips disposed on the first layer and decreases according to the size of the first layer. This can be particularly advantageous for larger areas that have only partial coverage of the first layer by optoelectronic components and thus have a so-called large "dead area".

[0129] In some embodiments, the step of structuring the conductor layer can include lithographic structuring of the conductor layer, in particular photolithographic structuring of the conductor layer. By using a photomask (also called an optical mask), a geometric pattern of light can be transferred to a photosensitive, in particular light-sensitive, chemical photoresist on the conductor layer. Light irradiation chemically changes the photoresist. A portion of the photoresist can be removed by a solution called a developer. Positive photoresist is a common type and becomes soluble in the developer after exposure. When using negative photoresist, the unexposed areas become soluble in the developer. After a series of chemical treatments, the exposed pattern can then be etched into the conductor layer to obtain the desired structured conductor layer.

[0130] In some embodiments, the step of structuring the conductor layer can include additive printing the conductor layer onto the upper surface of the optoelectronic component and the upper surface of the first layer.

[0131] In some embodiments, the method can include detecting the position of at least one optoelectronic component, in particular using automated optical inspection (AOI). This can ensure that the optoelectronic component, in particular at least one electrical contact arranged on the upper surface of the optoelectronic component, is aligned with the structured conductor layer in a subsequent process. Alternatively, an arrangement process can be used that provides sufficient accuracy to align the optoelectronic component, in particular at least one electrical contact arranged on the upper surface of the optoelectronic component, with the structured conductor layer. Thus, AOI can be avoided.

[0132] In some embodiments, the step of providing the conductor layer includes arranging the conductor layer on the upper surface of the first layer and / or on at least one optoelectronic component. Optionally, a lamination device can be used to laminate the conductor layer on the upper surface of the first layer and / or on at least one optoelectronic component. In some embodiments, a heated roll laminator can be used to laminate the conductor layer on the upper surface of the first layer and / or on at least one optoelectronic component, in particular in a roll-to-roll process.

[0133] In some embodiments, the step of providing a conductor layer on the upper surface of the first layer and / or on at least one optoelectronic component includes the step of at least partially embedding the at least one optoelectronic component in the first layer. Thereby, the at least one optoelectronic component can be at least partially pushed into the first layer, and at the same time, the conductor layer can be disposed on the upper surface of the first layer and / or on the at least one optoelectronic component. Therefore, the step of embedding the at least one optoelectronic component in the first layer and the step of disposing, particularly laminating, the conductor layer on the upper surface of the first layer and / or on the at least one optoelectronic component can be performed simultaneously. In particular, the at least one optoelectronic component and / or the first layer can be heated to an appropriate temperature, and when that temperature is reached and after that temperature is reached, the at least one optoelectronic component can be pushed into the first layer.

[0134] In some embodiments, the at least one optoelectronic component can be embedded in the first layer such that the upper surface of the optoelectronic component is disposed within a plane defined by the upper surface of the first layer. Therefore, the conductor layer can be disposed on a substantially flat surface formed by the upper surface of the first layer and the upper surface of the at least one optoelectronic component.

[0135] In some embodiments, the step of disposing a conductor layer on the upper surface of the first layer and / or on at least one optoelectronic component is providing a flat conductor layer on the upper surface of the at least one optoelectronic component; and deep drawing the conductor layer so as to cover the upper surfaces of the at least one optoelectronic component and the first layer; and includes.

[0136] In some embodiments, at least one optoelectronic component can be disposed on the upper surface of the first layer so as not to be embedded in the first layer. The conductor layer can be disposed such that a first portion of the conductor layer is disposed on the upper surface of the first layer, a second portion of the conductor layer is disposed on the upper surface of the optoelectronic component, and an intermediate portion of the conductor layer is disposed on the side surface of the optoelectronic component, and is disposed on the upper surface of the first layer and / or on at least one optoelectronic component so as to interconnect the first portion and the second portion of the conductor layer.

[0137] In some embodiments, the first layer comprises or consists of an elastic material such as, for example, polyvinyl butyral (PVB), ethylene-vinyl acetate (EVA), or thermoplastic polyurethane (TPU). Optionally, the first layer can be a foil of an elastic material. The elastic first layer can adapt to a non-planar contour or shape. The first layer can comprise or consist of other plastics other than PVB, particularly, preferably, other resins having strong bonding properties, optical transparency, adhesiveness to many surfaces, toughness, and flexibility, such as ethylene-vinyl acetate (EVA).

[0138] In some embodiments, the first layer can be an intermediate layer disposed between a cover layer and a carrier layer. At least one of the cover layer and the carrier layer can be at least partially transparent and can comprise or consist of glass or other at least partially transparent material such as, for example, methacrylate (PMMA) and / or polycarbonate (PC).

[0139] Using PVB or EVA foil as the first layer, a smooth laminate between the cover layer and the carrier layer (particularly, two glasses) can be obtained.

[0140] In some embodiments, the step of disposing at least one optoelectronic component on the upper surface of the first layer includes adhering at least one optoelectronic component to the upper surface of the first layer using an adhesive. The inherent adhesiveness of the PVB film at high temperatures can be used to hold at least one optoelectronic component at a predetermined position on the upper surface of the first layer.

[0141] In some embodiments, at least one optoelectronic component can be an LED that is a volume emitter or a surface emitter. At least one optoelectronic component can be individually controlled. Thus, in at least some embodiments, a desired light distribution can be obtained from the optoelectronic device. The individual control of at least one optoelectronic component can be achieved, for example, by individually controlling the current supplied to each optoelectronic component.

[0142] In some embodiments, at least one optoelectronic component, in particular an LED, can be less than 300 μm, in particular less than 150 μm. Due to such a spatial extent, at least one optoelectronic component is not visible to the human eye at the reading distance.

[0143] In some embodiments, a micro-LED (also referred to as μLED) or a μLED chip can be used as the optoelectronic component. A μLED is, for example, a small LED with an edge length of less than 70 μm, in particular less than 20 μm, in particular in the range from 1 μm to 10 μm. Another range is from 10 to 60 μm. Thereby, the surface area can be from several hundred μm 2 to several tens of μm 2 For example, a μLED can have an edge length of about 50 μm and a surface area of about 2500 μm 2 In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is less than 30 μm 2 The general height of such a μLED is, for example, in the range of 1.5 μm to 10 μm.

[0144] A micro light-emitting diode chip (also referred to as a μLED chip) can be used as an optoelectronic component. The micro light-emitting diode can form a pixel or a sub-pixel and can emit light of a selected color.

[0145] In some embodiments, in particular, all of the electrical contacts (in particular, contact pads) of at least one optoelectronic component are arranged on the upper surface of the optoelectronic component. The optoelectronic component can be arranged on the upper surface of the first layer such that the electrical contacts face away from the upper surface of the first layer. Thus, at least one optoelectronic component can be formed as a flip-chip LED, a thin-film flip-chip LED, or a flip-chip μLED.

[0146] In some embodiments, the conductor layer comprises or consists of, for example, a layer of a conductive material such as copper, gold, or silver. Optionally, the conductive material layer comprises conductive nanoparticles such as, for example, silver and / or gold and / or copper nanoparticles.

[0147] In some embodiments, the conductor layer comprises or consists of a nanostructurable nanoparticle paste containing conductive nanoparticles such as, for example, silver and / or gold and / or copper nanoparticles.

[0148] In some embodiments, in addition to the conductive material layer, the conductor layer comprises a second conductive material layer comprising or consisting of a conductive adhesive or solder. The second conductive material layer can in particular comprise or consist of an adhesive, solder, or solder glue. The second conductive material layer can have isotropic or anisotropic conductivity. The second conductive material layer can be arranged on the conductive material layer before the conductor layer is provided on the upper surface of the first layer and / or on at least one optoelectronic component. Alternatively, the second conductive material layer can be arranged on the upper surface of the first layer and on at least one optoelectronic component, and the first conductive material layer can be provided on the second conductive material layer.

[0149] In some embodiments, the method includes providing an electrical contact element made, in particular, of a conductive adhesive or solder. The electrical contact element is provided on at least the electrical contacts of the optoelectronic component. The electrical contacts, in particular the contact pads, can be arranged on the upper surface of the optoelectronic component. In particular, the electrical contact element can only be arranged on the electrical contacts and cannot be arranged on the upper surface of the first layer and / or the exposed area of the upper surface of at least one optoelectronic component.

[0150] In some embodiments, the method includes mechanically and electrically interconnecting a conductor layer to the electrical contacts of the optoelectronic component, where the electrical contacts, in particular the contact pads, can be arranged on the upper surface of the optoelectronic component. In some embodiments, the step of mechanically and electrically interconnecting the conductor layer to the electrical contacts of the optoelectronic component can be performed before the step of structuring the conductor layer. Alternatively, in some embodiments, the step of mechanically and electrically interconnecting the conductor layer to the electrical contacts of the optoelectronic component can be performed after the step of structuring the conductor layer.

[0151] In some embodiments, the step of mechanically and electrically interconnecting the conductor layer to the electrical contacts of the optoelectronic component can include regularly (punctual) laser welding the conductor layer in the region above the electrical contacts. In particular, the regular laser welding of the conductor layer and the electrical contacts can only be performed in the region above the electrical contacts so as to mechanically and electrically interconnect the conductor layer to the electrical contacts of the optoelectronic component.

[0152] In some embodiments, the step of mechanically and electrically interconnecting the conductor layer to the electrical contacts of the optoelectronic component can include heating the conductor layer until it exceeds the melting / reaction temperature of the conductive adhesive or solder. The conductive adhesive or solder can be arranged on at least the electrical contacts of the optoelectronic component or on the upper surface of the first layer and at least one optoelectronic component as a second conductive material layer. In particular, after cooling the conductive adhesive or solder, a mechanical and electrical interconnection between the conductor layer and the electrical contacts of the optoelectronic component can be provided.

[0153] In some embodiments, following the step of structuring the conductor layer, a step of sintering a photo-structurable nanoparticle paste, particularly a nanoparticle paste containing conductive nanoparticles such as, for example, silver and / or gold and / or copper nanoparticles, can be performed. The sintering step can include an oven process if the first layer and at least one optoelectronic component can withstand a temperature of at least about 140°C. Alternatively, the sintering step can include a photonic curing process.

[0154] In some embodiments, the method further includes the step of disposing a planarization layer on the first layer and / or the conductor layer. The planarization layer can comprise or consist of an elastic material such as, for example, polyvinyl butyral (PVB). Optionally, the planarization layer can be a foil of elastic material. The foil is elastic and can adapt to a non-planar contour or shape. Thus, the foil can be disposed, for example, on a curved carrier surface. Alternatively, the planarization layer can comprise or consist of other plastics, particularly other resins such as, for example, ethylene-vinyl acetate (EVA), which preferably have strong bonding properties, optical transparency, adhesiveness to many surfaces, toughness, and flexibility. In some embodiments, at least one optoelectronic component and / or the structured conductor layer can be embedded in the planarization layer.

[0155] In some embodiments, the conductor layer can be provided on the upper surface of the first layer, particularly the entire upper surface of the first layer, or the upper surface of a temporary carrier layer. The conductor layer can then be structured such that the resulting structured conductor layer includes electrical conductor paths. Then, at least one optoelectronic component can be disposed on the structured conductor layer such that the electrical conductor paths are connected to the electrical contacts of the at least one optoelectronic component. Such a method can be referred to as "chips last" because at least one optoelectronic component is disposed on the structured conductor layer after the conductor layer has been structured.

[0156] In some embodiments, a method for manufacturing a photoelectronic device, in particular at least partially transparent pane, for example of a vehicle, comprises the following steps, providing a conductor layer on an intermediate layer arranged between a first layer, in particular a cover layer and a carrier layer, structuring the conductor layer such that the resulting structured conductor layer comprises an electrical conductor path suitable for supplying electricity to at least one optoelectronic component, placing the at least one optoelectronic component on the structured conductor layer, and comprising.

[0157] In some embodiments, an electrical contact element is provided on the structured conductor layer to electrically connect the contacts of at least one optoelectronic component to the structured conductor layer. The contact element is provided on the structured conductor layer such that the contact element is aligned with the contacts of at least one optoelectronic component.

[0158] In some embodiments, the contact element is provided at a defined position on the structured conductor layer. The position is defined such that the contact element is aligned with the electrical contacts of the optoelectronic component. Each optoelectronic component can be, for example, a flip chip having two electrical contacts at defined positions on its bottom surface. The contact elements for such a flip chip are arranged on the structured conductor layer such that each contact of the flip chip contacts one contact element.

[0159] In some embodiments, the contact element is provided, for example, by applying a solder paste on the structured conductor layer. In particular, in some embodiments, the method comprises applying a solder material comprising a mixture of tin, silver, and copper (SnAgCu), for example as SAC.

[0160] In some embodiments, the method further includes heating the contact element using a photonic pulse. To generate a photonic optical pulse, for example, a broadband emitter such as a high-pressure xenon lamp can be used. In particular, in some embodiments, the method further includes soldering the contact element using photonic soldering. The melting temperature of the solder is preferably higher than the maximum operating temperature (Tmax) of the first layer. The maximum operating temperature (Tmax) can be the highest temperature that can be applied to the material of the first layer for a long time without causing a significant change in properties. A temperature increase above the maximum operating temperature can cause degradation, chemical changes, and excessive creep.

[0161] By heating the contact element using a particularly short photonic pulse of at least about 3 milliseconds to 3 seconds, the contact element can be at least partially melted without significantly changing the material properties of the first layer and / or the structured conductor layer disposed below the contact element.

[0162] In some embodiments, the contact element can absorb the energy of the photonic pulse (while, preferably, the transparent material of the first layer does not absorb the energy of the photonic pulse), or, to a relatively lesser extent, can absorb the energy of the photonic pulse.

[0163] Thus, if the first layer is at least partially transparent and the contact element is at least less transparent, the contact element can absorb more energy of the photonic pulse than the first layer. Thus, the contact element can be heated and / or melted without significantly changing the material properties of the first layer and / or the structured conductor layer disposed below the contact element.

[0164] In some embodiments, a photoelectronic device, in particular at least partially transparent pane of a vehicle for example, has an intermediate layer arranged between a first layer, in particular a cover layer and a carrier layer, at least one optoelectronic component at least partially or completely embedded in the first layer, and at least one structured conductor layer arranged on the upper side of the first layer and on the at least one optoelectronic component. The conductor layer has an electrical conductor path for supplying electricity to the at least one optoelectronic component.

[0165] In some embodiments, at least one optoelectronic component can be embedded in the first layer such that the upper side of the optoelectronic component is arranged in a plane defined by the upper side of the first layer. Thus, the conductor layer can be arranged on a substantially flat surface formed by the upper side of the first layer and the upper side of the at least one optoelectronic component.

[0166] In some embodiments, a first portion of the conductor layer is arranged on the upper side of the first layer, a second portion of the conductor layer is arranged on the upper side of the optoelectronic component and is in contact with an electrical contact of the optoelectronic component. The electrical contact, in particular a contact pad, is arranged on the upper side of the optoelectronic component. In particular, the second portion of the conductor layer is mechanically and electrically interconnected with the electrical contact of the optoelectronic component.

[0167] In some embodiments, the conductor layer has a sintering residue of a photo-structurable nanoparticle paste, in particular a residue of a photo-structurable nanoparticle paste containing conductive nanoparticles such as silver and / or gold and / or copper nanoparticles.

[0168] In some embodiments, a photoelectronic device, in particular at least partially transparent pane of a vehicle for example, has an intermediate layer arranged between a first layer, in particular a cover layer and a carrier layer, at least one optoelectronic component arranged on the first layer, and at least one structured conductor layer arranged on the upper side of the first layer and on the at least one optoelectronic component. The conductor layer has an electrical conductor path for supplying electricity to the at least one optoelectronic component, and the conductor layer has a sintering residue of a nanostructurable nanoparticle paste, in particular a residue of a nanostructurable nanoparticle paste containing conductive nanoparticles such as silver and / or gold and / or copper nanoparticles.

[0169] In some embodiments, at least one optoelectronic component can be arranged on the upper side of the first layer so as not to be embedded in the first layer.

[0170] In some embodiments, a first part of the conductor layer can be arranged on the upper side of the first layer, a second part of the conductor layer can be arranged on the upper side of the optoelectronic component and can be brought into contact with an electrical contact of the optoelectronic component. The electrical contact, in particular a contact pad, can be arranged on the upper side of the optoelectronic component. In some embodiments, an intermediate part of the conductor layer can be arranged on the side surface of the optoelectronic component and can interconnect the first part and the second part of the conductor layer. Thus, the at least one optoelectronic component and the upper side of the first layer can be covered by the conductor layer.

[0171] In some embodiments, a photoelectronic device, in particular at least partially transparent pane of a vehicle for example, has an intermediate layer arranged between a first layer, in particular a cover layer and a carrier layer, a structured conductor layer arranged on the upper surface of the first layer, and at least one optoelectronic component arranged on the structured conductor layer. The structured conductor layer has electrical conductor paths for supplying electricity to the at least one optoelectronic component. Furthermore, an electrical contact element is arranged on the structured conductor layer, in particular between the structured conductor layer and the electrical contact of the at least one optoelectronic component, to electrically connect the electrical contact of the at least one optoelectronic component to the structured conductor layer. The contact element is in particular aligned with the electrical contact of the at least one optoelectronic component and comprises or consists of a material having a melting or curing temperature higher than the maximum operating temperature of the first layer.

[0172] In some embodiments, a planarization layer is arranged on the first layer and / or the conductor layer. The planarization layer can comprise or consist of a material similar to the first layer, such as PVB for example. Optionally, at least one optoelectronic component can be embedded in the planarization layer.

[0173] In some embodiments of the present invention, an at least partially flexible optoelectronic device has a reinforcement material, which stabilizes at least the connection regions of the optoelectronic device and enables a reliable electrical interconnection of the optoelectronic device with the environment.

[0174] In some embodiments of the present invention, a method for manufacturing an optoelectronic device, for example at least partially transparent pane of a vehicle for example, comprises the following steps providing a carrier substrate, in particular a temporary carrier substrate, and a release layer, in particular a temporary release layer arranged on the carrier substrate; providing a structured conductor layer on the release layer on the side opposite to the carrier substrate; A step of disposing at least one optoelectronic component on the structured conductor layer, wherein the structured conductor layer has an electrical conductor path for providing electricity to the at least one optoelectronic component. A step of providing a first layer on the release layer, wherein the first layer covers the conductor layer and the at least one optoelectronic component such that the at least one optoelectronic component is at least partially embedded in the first layer. A step of removing the carrier substrate and the release layer. Including.

[0175] By providing a carrier substrate, particularly a rigid carrier substrate, which is used as a basis for constructing optoelectronic devices thereon, a cost-effective production process with relatively few process steps can be provided for many formats of optoelectronic devices. The release layer can function, for example, as a thermal release layer, a chemical release layer, or a laser release layer, enabling the easy and non-destructive removal of the optoelectronic device from the carrier substrate.

[0176] In some embodiments, the carrier substrate can preferably comprise or consist of a transparent and rigid material (such as glass, etc.).

[0177] In some embodiments, the carrier substrate can comprise or consist of a deformable material such as, for example, a molding compound or a resin. This can be advantageous because the optoelectronic device can be shaped into the desired form.

[0178] In some embodiments, the release layer can comprise or consist of a soluble material such as, for example, silicon nitride (SiN). Thus, the release layer can be easily removed.

[0179] In some embodiments, after removing the carrier substrate and the release layer, the method further includes providing a planarization layer on the first layer and / or the structured conductor layer and / or at least one optoelectronic component. Thus, the structured conductor layer and / or at least one optoelectronic component are disposed between the first layer and the planarization layer. Further, the structured conductor layer can be disposed within the neutral fiber of the laminate of the first layer, the structured conductor layer, and the planarization layer.

[0180] In some embodiments, the first layer comprises or consists of an elastic material such as, for example, polyvinyl butyral (PVB). Optionally, the first layer can be a foil of an elastic material. The elastic first layer can adapt to a non-planar contour or shape. The first layer can comprise or consist of other plastics than PVB, in particular, preferably, other resins having strong bonding properties, optical transparency, adhesiveness to many surfaces, toughness, and flexibility, such as ethylene-vinyl acetate (EVA), silicone, or thermoplastic urethane (TPU).

[0181] In some embodiments, at least one optoelectronic component can be embedded in the first layer such that the upper surface of the optoelectronic component is disposed within a plane defined by the upper surface of the first layer.

[0182] In some embodiments, the first layer can be an intermediate layer, in particular a permanent carrier layer, disposed between the cover layer and the carrier layer. The carrier layer and the cover layer are preferably permanent layers in the final optoelectronic device. At least one of the cover layer and the carrier layer can be at least partially transparent and can comprise or consist of glass or other at least partially transparent materials such as, for example, methacrylate (PMMA), silicone, and / or polycarbonate (PC).

[0183] Using PVB or EVA foil as the first layer, a smooth lamination between the cover layer and the carrier layer (especially two glasses) can be obtained. In some embodiments, the lamination can be carried out using temperature and pressure.

[0184] In some embodiments, at least one optoelectronic component can be an LED which is a volume emitter or a surface emitter. At least one optoelectronic component can be controlled individually. Thus, in at least some embodiments, a desired light distribution can be obtained from the optoelectronic device. The individual control of at least one optoelectronic component can be achieved, for example, by individually controlling the current supplied to each optoelectronic component.

[0185] In some embodiments, at least one optoelectronic component, especially an LED, can be less than 300 μm, especially less than 150 μm. Due to such a spatial extent, at least one optoelectronic component is invisible to the human eye at the reading distance.

[0186] In some embodiments, micro-LEDs (also called μLEDs) or μLED chips can be used as optoelectronic components. μLEDs are, for example, small LEDs with an edge length of less than 70 μm, especially less than 20 μm, especially in the range of 1 μm to 10 μm. Another range is 10 - 60 μm. Thereby, the surface area can be from several hundred μm 2 to several tens of μm 2 For example, a μLED can have an edge length of about 50 μm and a surface area of about 2500 μm 2 In some cases, the μLED has an edge length of 5 μm or less, and as a result, the surface area is less than 30 μm 2 The general height of such μLEDs is, for example, in the range of 1.5 μm to 10 μm.

[0187] A micro light-emitting diode chip (also referred to as a μLED chip) can be used as an optoelectronic component. The micro light-emitting diode can form a pixel or a sub-pixel and emit light of a selected color.

[0188] In some embodiments, the conductor layer comprises or consists of a layer of a conductive material such as, for example, copper, gold, or silver.

[0189] In some embodiments, the step of providing the structured conductor layer on the opposite side of the carrier substrate from the release layer includes the step of growing a layer of a conductive material (such as, for example, copper) on the release layer.

[0190] In some embodiments, the conductor layer can be provided on the release layer, particularly over the entire surface of the release layer. The conductor layer can then be structured such that the resulting structured conductor layer includes conductor paths. At least one optoelectronic component can then be disposed on the structured conductor layer such that the electrical conductor paths are connected to the electrical contacts of the at least one optoelectronic component.

[0191] In some embodiments, the planarization layer can comprise or consist of an elastic material such as, for example, polyvinyl butyral (PVB). Optionally, the planarization layer can be a foil of the elastic material. The foil can be elastic and can adapt to a non-planar contour or shape. Alternatively, the planarization layer can comprise or consist of another plastic, particularly another resin such as, for example, ethylene-vinyl acetate (EVA), which preferably has strong bonding properties, optical transparency, adhesiveness to many surfaces, toughness, and flexibility. In some embodiments, the structured conductor layer can be embedded in the planarization layer.

[0192] In some embodiments, the method further includes providing at least one reinforcing material on the release layer and / or the structured conductor layer. The step of providing at least one reinforcing material on the release layer and / or the structured conductor layer is preferably performed before the step of providing the first layer and the step of removing the release layer and the temporary carrier substrate. The reinforcing material can preferably function as a stabilizer for at least the connection region of the optoelectronic device, enabling a reliable electrical interconnection between the optoelectronic device and the environment.

[0193] In some embodiments, the optoelectronic device can be made of a flexible material, and a rigid reinforcing material can be disposed in the edge region of the optoelectronic device to stabilize at least the edge region of the optoelectronic device. The edge region and in particular the reinforcing material can be used as a connection region of the optoelectronic device, for example, to enable a reliable electrical interconnection between the optoelectronic device and the environment and / or at least one adjacent second optoelectronic device.

[0194] In some embodiments, the reinforcing material can have a rigid housing and an electrical conductor path within the housing for electrically connecting the optoelectronic device and in particular the optoelectronic component to the environment and / or at least one adjacent second optoelectronic device.

[0195] In some embodiments, at least one reinforcing material is provided in the edge region of the release layer. The edge region includes the edge of the release layer.

[0196] In some embodiments, at least one reinforcing material can at least partially cover the structured conductor layer. The structured conductor layer can extend to the edge region of the release layer. Thus, the reinforcing material can also cover the portion of the structured conductor layer disposed in the edge region of the release layer.

[0197] In some embodiments, the outer edge of at least one reinforcing member can be aligned with the edge of the release layer. Thus, the side surface of at least one reinforcing member and the side surface of the release layer can be arranged in the same plane.

[0198] In some embodiments, the step of providing the first layer on the release layer can include the step of at least partially embedding at least one reinforcing member in the first layer. Optionally, the first layer should not completely cover the edge region of the release layer. Thus, at least one reinforcing member protrudes from the first layer. Thus, in some embodiments, the first layer is distal from the edge of the release layer.

[0199] In some embodiments, the reinforcing member comprises or consists of a rigid material such as, for example, a rigid plastic material. Optionally, the reinforcing member is more rigid than the first layer, and thus reinforces the first layer at least in the edge region of the first layer.

[0200] In some embodiments, the method further includes the step of changing the shape of the intermediate product before providing the first layer on the release layer. The intermediate product can include a carrier substrate and a release layer, a structured conductor layer on the release layer, at least one optoelectronic component on the structured conductor layer, and optionally at least one reinforcing member on the release layer. The intermediate product can preferably be obtained by the steps of providing a carrier substrate and a release layer disposed on the carrier substrate, providing a structured conductor layer on the release layer, disposing at least one optoelectronic component on the structured conductor layer, and optionally providing at least one reinforcing member on the release layer and / or the structured conductor layer. The changed shape of the intermediate product can have, for example, at least one curved surface.

[0201] In some embodiments, after the step of changing the shape of the intermediate product, the first layer is provided on the conductor layer and at least one optoelectronic component. The step of changing the shape of the intermediate product can be carried out, for example, by using a mold and pressing the intermediate product into the mold. Thereafter, the first layer and at least one optoelectronic component can be provided on the conductor layer, for example, by molding the first layer on the conductor layer and at least one optoelectronic component. Thus, the first layer can comprise or consist of a mechanically robust material such as, for example, a molding compound, silicon, or a transparent or diffusive filling resin.

[0202] In some embodiments, the optoelectronic device can be arranged on a curved surface and fixed, in particular adhered, thereto in a further step. In a preferred embodiment, the curved surface of the intermediate product and / or the curved surface of the optoelectronic device can coincide with the curved surface on which the optoelectronic device is to be arranged.

[0203] In some embodiments, an optoelectronic device, in particular at least partially transparent pane of a vehicle, for example, has the first layer, at least one optoelectronic component at least partially or completely embedded in the first layer, and at least one structured conductor layer arranged on the upper surface of the first layer and on the at least one optoelectronic component. The structured conductor layer has electrical conductor paths for supplying electricity to the at least one optoelectronic component.

[0204] In some embodiments, the optoelectronic device can further have a planarization layer on the upper surface of the first layer and / or on the structured conductor layer and / or on at least one optoelectronic component. In some embodiments, the structured conductor layer can be embedded in the planarization layer. In some embodiments, the structured conductor layer and / or at least one optoelectronic component can be disposed between the first layer and the planarization layer such that the structured conductor layer is disposed, for example, within the neutral plane of a laminate including the first layer, the structured conductor layer, and the planarization layer. The neutral plane is a conceptual plane within the laminate. When subjected to a load by a bending force, the laminate bends such that, for example, the inner surface is in a compressed state and the outer surface is in a tensile state, or vice versa. The neutral plane is a plane within the laminate, and the material of the laminate is not subjected to any compressive or tensile stress.

[0205] In some embodiments, at least one optoelectronic component can be completely embedded in the first layer, particularly such that the upper surface of the optoelectronic component is disposed within the plane defined by the upper surface of the first layer. Thus, the first layer and at least one optoelectronic component can provide a substantially flat upper surface. In other words, at least one optoelectronic component can be completely embedded in the first layer such that the upper surface of the optoelectronic component is disposed within the plane defined by the upper surface of the first layer but is not covered by the first layer.

[0206] In some embodiments, the optoelectronic device further has at least one reinforcing member on the upper surface of the first layer and / or on the structured conductor layer. In some embodiments, the reinforcing member can be at least partially embedded in the first layer.

[0207] Thus, in some embodiments, the reinforcing member protrudes from the first layer, particularly from the side surface of the first layer.

[0208] In some embodiments, the upper surface of the first layer is curved.

[0209] In some embodiments, an optoelectronic device, in particular at least partially transparent pane of a vehicle, has an intermediate layer stack having at least a top layer, which is arranged between a cover layer and a carrier layer, the top layer having at least one opening, in particular an opening on the upper surface of the top layer. The optoelectronic device further has at least one electronic or optoelectronic component arranged in the opening, and the optoelectronic device further has at least one electrical conductor arrangement, in particular a structured conductor layer, for supplying electricity to the at least one electronic or optoelectronic component.

[0210] By arranging at least one electronic or optoelectronic component in the opening, the topography of the optoelectronic device can be reduced and subsequent processes of the optoelectronic device can be simplified, because it can be technically difficult to balance optoelectronic components arranged on the surface of the top layer of the layer stack (but not in the opening). Furthermore, by arranging at least one electronic or optoelectronic component in the opening, the topography of the optoelectronic device can be reduced. Thus, arranging at least one electrical conductor arrangement, in particular a structured conductor layer, can be improved. A further advantage is that at least one electronic or optoelectronic component can have better mechanical stability when arranged in the opening. In particular, the side surfaces of the opening can fix an electronic or optoelectronic component, which can be, for example, an optoelectronic light source (such as an LED, an optoelectronic detector, or an IC chip, etc.).

[0211] In some embodiments, a first part of the electrical conductor arrangement is arranged on the upper surface of the top layer, a second part of the electrical conductor arrangement is arranged on the upper surface of the electronic or optoelectronic component and is in contact with the electrical contact of the electronic or optoelectronic component. Electrical contacts, in particular contact pads, can be arranged on the upper surface of the electronic or optoelectronic component.

[0212] In some embodiments, the boundary region is between the upper surface of an electronic or optoelectronic component and the adjacent upper surface of the uppermost layer of the layer stack. The intermediate portion of the electrical conductor arrangement extends across the boundary region and can interconnect the first portion of the electrical conductor arrangement and the second portion of the electrical conductor arrangement.

[0213] Preferably, at least one electronic or optoelectronic component is arranged within an opening of the uppermost layer of the layer stack, in particular an intermediate layer stack arranged between a cover layer and a carrier layer. The electrical conductor arrangement, in particular the conductor layer, is arranged on the upper surface of the uppermost layer of the layer stack and on the upper surface of the electronic or optoelectronic component and is in contact with the electrical contacts of the electronic or optoelectronic component. Furthermore, the electrical conductor arrangement can extend across the boundary region, in particular across a gap between the shell surface of the electronic or optoelectronic component and the uppermost layer. Thus, the electrical conductor arrangement can fill this gap. The boundary region, in particular the gap, is preferably small because the distance filled by the electrical conductor arrangement can be limited by the process of arranging the electrical conductor arrangement on the upper surface of the uppermost layer, on the upper surface of the electronic or optoelectronic component, and on the electrical contacts of the electronic or optoelectronic component.

[0214] The formulation that something is arranged on something else should not necessarily be understood as something being directly arranged on something else and can include other elements arranged therebetween. Thus, the formulation that something is arranged on something else can also be understood as something being indirectly arranged on or above something else. In particular, the formulation that the electrical conductor arrangement is arranged on the upper surface of the uppermost layer can be understood as the electrical conductor arrangement being directly arranged on the upper surface of the uppermost layer or as the electrical conductor arrangement being arranged above the upper surface of the uppermost layer, although other elements may be arranged between the electrical conductor arrangement and the upper surface of the uppermost layer.

[0215] In some embodiments, the opening is a cavity or a through-hole.

[0216] When the opening is a cavity, the layer stack preferably has only a single layer, particularly the topmost layer. In some embodiments, the cavity has a bottom surface formed by the topmost layer, and at least one electronic or optoelectronic component is disposed on the bottom surface.

[0217] When the opening is a through-hole in the topmost layer, the layer stack preferably has only two layers, particularly the topmost layer and the bottommost layer. In some embodiments, the layer stack has a bottommost layer disposed below the topmost layer, and this bottommost layer preferably carries at least one electronic or optoelectronic component disposed within the through-hole of the topmost layer.

[0218] In some embodiments, the topmost layer is at least partially transparent.

[0219] In some embodiments, the bottommost layer is at least partially transparent.

[0220] In some embodiments, the layer stack, particularly the intermediate layer stack, is preferably at least partially transparent and is preferably disposed between the cover layer and the carrier layer, and at least one of the cover layer and the carrier layer is at least partially transparent. Preferably, each layer of the optoelectronic device is made of or at least contains a material that is at least partially transparent. Thus, the optoelectronic device can be at least partially transparent.

[0221] In some embodiments, the optoelectronic device can have or be incorporated into an at least partially transparent pane, particularly a vehicle pane. For example, the optoelectronic device can be disposed between two glass plates, which together can form a vehicle window device. The two glass plates can also be components of the optoelectronic device such that in at least some embodiments, the optoelectronic device can have the glass plates.

[0222] In some embodiments, at least one electronic or optoelectronic component is disposed entirely within the opening such that, in particular, the upper surface of the electronic or optoelectronic component lies within a reference plane that extends across the upper surface of the topmost layer. In other words, the upper surface of the electronic or optoelectronic component and the upper surface of the topmost layer are disposed in the same plane, forming a flat upper surface.

[0223] In some embodiments, at least one electronic or optoelectronic component is partially disposed within the opening such that, in particular, the upper surface of the electronic or optoelectronic component protrudes from the upper surface of the topmost layer by a particular height H. The height H is preferably at most half the thickness of the electronic or optoelectronic component. Thus, the electronic or optoelectronic component can be partially disposed within the opening such that at most half of the thickness of the electronic or optoelectronic component protrudes from the upper surface of the topmost layer.

[0224] In some embodiments, the electronic or optoelectronic component can have or consist of at least one of the following: a light-emitting diode (LED), in particular a flip-chip LED, an integrated circuit (IC), a photodiode, a sensor, in particular an infrared sensor. All of the electrical contacts of the flip-chip LED can be disposed on the same surface, in particular on the upper surface of the chip. A suitable flip-chip LED can be a small LED having an edge length of less than 150 μm, in particular less than 100 μm. A typical height of a suitable LED is, for example, in the range of 120 μm to 5 μm.

[0225] In some embodiments, the electronic or optoelectronic component can have or consist of μLEDs. The μLEDs are, for example, small LEDs having an edge length of less than 70 μm, in particular less than 20 μm, in particular in the range from 1 μm to 10 μm. Another range is from 10 to 30 μm. Thereby, the surface area can be from several hundred μm 2 to several tens of μm 2 For example, the μLED has an edge length of about 8 μm and about 60 μm 2can have a surface area. In some cases, the μLED has an edge length of 5 μm or less, and as a result, the size of the surface area is less than 30 μm 2 The general height of such μLEDs is, for example, in the range of 1.5 μm to 10 μm.

[0226] Advantageously, a micro light-emitting diode chip (also referred to as a μLED chip) is used as an electronic or optoelectronic component. The micro light-emitting diode can form a pixel or a sub-pixel and emit light of a selected color.

[0227] In some embodiments, the boundary region is between the upper surface of the electronic or optoelectronic component and the adjacent upper surface of the topmost layer of the layer stack. The boundary region can have a gap between the shell surface of the electronic or optoelectronic component and the side surface of the opening. The side surface of the opening faces the shell surface, and the gap preferably extends circumferentially around the shell surface and around the electronic or optoelectronic component. The shell surface is preferably formed by the outer surface of the electronic or optoelectronic component excluding the upper surface of the electronic or optoelectronic component and the bottom surface of the electronic or optoelectronic component facing the upper surface.

[0228] In some embodiments, the gap can be formed by the distance between the electronic or optoelectronic component disposed in the opening of the topmost layer and the side surface of the opening.

[0229] In some embodiments, the gap has a width of less than 10 to 15 μm. In particular, the gap has a width of less than 10 to 15 μm in the plane extending over the upper surface of the top layer. Thus, the intermediate portion of the electrical conductor arrangement extending beyond the boundary region can extend over a distance of 10 to 15 μm or less. This can be advantageous because the first portion of the electrical conductor arrangement is disposed on the upper surface of the top layer, the second portion of the electrical conductor arrangement is disposed on the upper surface of the electronic or optoelectronic component, and the intermediate portion of the electrical conductor arrangement extends beyond the boundary region, in particular the gap, and interconnects the first portion and the second portion of the electrical conductor arrangement. The process of arranging the electrical conductor arrangement can be limited by the maximum distance that can be filled by the intermediate portion of the electrical conductor arrangement.

[0230] In some embodiments, the gap is filled with a filler material, in particular an adhesive. Optionally, the accumulation of the filler material is disposed on the filled gap, in particular on the plane extending over the upper surface of the top layer. This can be advantageous because when the electronic or optoelectronic component protrudes from the upper surface, the first portion of the electrical conductor arrangement is disposed on the upper surface of the top layer, the second portion of the electrical conductor arrangement is disposed on the upper surface of the electronic or optoelectronic component, and the intermediate portion of the electrical conductor arrangement extends beyond the boundary region, in particular the gap, and interconnects the first portion and the second portion of the electrical conductor arrangement. The process of arranging the electrical conductor arrangement can be improved.

[0231] In some embodiments, the filler material is disposed between the layer of the layer stack and the bottom surface of the electronic or optoelectronic component, and the bottom surface of the electronic or optoelectronic component is on the side opposite to the upper surface of the electronic or optoelectronic component. The filler material can in particular comprise or consist of an adhesive for fixing the electronic or optoelectronic component in the opening.

[0232] In some embodiments, the filler can form a fillet weld between the upper surface of the top layer and the shell surface of the electronic or optoelectronic component. In particular, a filler in the form of a fillet weld can be partially disposed within the gap and can partially form a fillet weld between the upper surface of the top layer and the shell surface of the electronic or optoelectronic component.

[0233] In some embodiments, a dielectric layer, particularly a dielectric intermediate layer, is disposed between the electrical conductor arrangement and the top layer and / or between the electrical conductor arrangement and the uppermost surface of the electronic or optoelectronic component. Such a dielectric layer serves to prevent a short circuit between the electrical conductor arrangement and at least one of the top layer and the upper surface of the electronic or optoelectronic component.

[0234] In some embodiments, the top layer includes at least one of the following materials: polyethylene terephthalate (PET), biaxially oriented PET (boPET), polyethylene naphthalate (PEN), polyvinyl butyral (PVB), ethylene vinyl acetate (EVA), photoresist, and materials that can be cured by the use of ultraviolet light. In some embodiments, boPET is the optimal material.

[0235] In some embodiments, the bottom layer includes at least one of the following materials: polyethylene terephthalate (PET), biaxially oriented PET (boPET), polyethylene naphthalate (PEN), polyvinyl butyral (PVB), and ethylene vinyl acetate (EVA). In some embodiments, boPET is the optimal material.

[0236] In some embodiments, the material of the at least one electrical conductor arrangement can include indium tin oxide and / or silver. In some embodiments, the electrical conductor arrangement comprises or consists of a metal, particularly one of copper, silver, and gold.

[0237] In some embodiments, a method for manufacturing an optoelectronic device, in particular at least partially transparent pane, for example of a vehicle, comprises the following steps providing a layer stack having at least a top layer with at least one opening, in particular providing a layer stack having at least the top layer with an opening on the top surface of the top layer placing at least one electronic or optoelectronic component in the opening providing at least one electrical conductor arrangement, in particular a structured conductor layer, on the top surface of the top layer in particular for supplying electricity to the at least one electronic or optoelectronic component and comprising

[0238] In some embodiments, the opening is a cavity having a bottom formed by the top layer, and the at least one electronic or optoelectronic component is arranged in the cavity so as to be present on the bottom

[0239] In some embodiments, the opening is a through-hole in the top layer. The layer stack further has a bottom layer below the top layer, and the at least one electronic or optoelectronic component is arranged in the through-hole so as to be present on the bottom layer

[0240] In some embodiments, the step of placing at least one electronic or optoelectronic component in the opening comprises fixing the at least one electronic or optoelectronic component in the opening using a filling material, in particular an adhesive. The filling material is preferably arranged in the opening by using for example a step of dispensing, spraying or stamping the filling material. The at least one electronic or optoelectronic component can be arranged on the filling material in the opening, and the filling material, in particular the adhesive, can be cured in a further step

[0241] In some embodiments, the step of disposing at least one electronic or optoelectronic component within the opening includes the step of temporarily heating the layer stack, particularly in the vicinity of the opening, to affix the at least one electronic or optoelectronic component to the layer stack.

[0242] In some embodiments, the bottom layer of the layer stack comprises or consists of a material such as PVB or EVA, for example, and is temporarily heated, and the at least one electronic or optoelectronic component is disposed within the opening, particularly simultaneously, and in particular on top of the bottom layer of the layer stack. A boundary region, particularly a gap, is located between the upper surface of the electronic or optoelectronic component and the adjacent upper surface of the top layer of the layer stack, but preferably can be filled by pressing the electronic or optoelectronic component into the temporarily heated bottom layer, because the material of the bottom layer can flow into the boundary region.

[0243] In some embodiments, the step of providing the layer stack includes providing a first layer stack having an unstructured top layer and structuring the top layer to obtain at least one opening in the top layer.

[0244] The step of structuring the top layer to obtain at least one opening in the top layer can be carried out, for example, by ablation of the top layer to form the opening with the aid of a laser beam.

[0245] In some embodiments, the step of structuring the top layer to obtain at least one opening in the top layer can be carried out by punching or mechanically drilling through holes in the top layer.

[0246] In some embodiments, the step of structuring the top layer to obtain at least one opening in the top layer can be performed by lithographic structuring of the top layer. The photo-structurable resist can be provided on the top layer with a photomask thereon and provided on the top layer of the layer stack to etch at least one opening in the top layer, or the photo-structurable resist can be provided as the top layer of the layer stack and structured such that the opening is present within the photo-structurable resist. In the latter case, the photo-structurable resist can remain in the final product, while in the former case, the photo-structurable resist can be removed.

[0247] In some embodiments, the optoelectronic device has a layer stack providing a plurality of pixels. Each pixel of the plurality of pixels has at least one optoelectronic light source embedded, particularly fully embedded, in a first layer of the layer stack. The optoelectronic light source has a first reflective layer on its upper surface and optionally a second reflective layer on its bottom surface. The upper surface of the optoelectronic light source faces towards the upper surface of the layer stack, and the bottom surface of the optoelectronic light source faces away from the upper surface of the layer stack. Each pixel of the plurality of pixels further has a first pixel region on the upper surface of the layer stack and a structured light scattering arrangement for scattering light from the optoelectronic light source to uniformly illuminate this first pixel region.

[0248] In a further embodiment, the optoelectronic device has a layer stack providing a plurality of pixels. Each pixel of the plurality of pixels has at least one optoelectronic light source embedded, in particular completely embedded, in a first layer of the layer stack. The optoelectronic light source has a first reflective layer on its upper surface and a second reflective layer on its bottom surface. The upper surface of the optoelectronic light source faces towards the upper surface of the layer stack, and the bottom surface of the optoelectronic light source faces away from the upper surface. Each pixel of the plurality of pixels further has a first pixel region on the upper surface of the layer stack and a light scattering arrangement for scattering the light from the optoelectronic light source in order to uniformly illuminate this first pixel region. The light scattering arrangement forms a first portion of the first layer that circumferentially surrounds the optoelectronic light source.

[0249] In some embodiments, the optoelectronic device has a layer stack having a plurality of pixels. Each pixel of the plurality of pixels has at least one optoelectronic light source embedded, in particular completely embedded, in a first layer of the layer stack. The optoelectronic light source has a first reflective layer on its upper surface and optionally a second reflective layer on its bottom surface. The upper surface of the optoelectronic light source faces towards the upper surface of the layer stack, and the bottom surface of the optoelectronic light source faces away from the upper surface of the layer stack. Each pixel of the plurality of pixels further has a first pixel region on the upper surface of the layer stack and a light guiding layer disposed on the first layer. The first layer is disposed between the first pixel region and the light guiding layer, and the refractive index of the light guiding layer is higher than the refractive index of the other layers of the layer stack.

[0250] In some embodiments, the optoelectronic device has a layer stack that provides a plurality of pixels. Each pixel of the plurality of pixels has at least one optoelectronic light source embedded, particularly fully embedded, in a first layer of the layer stack. Each pixel of the plurality of pixels further has a first pixel region on the upper surface of the layer stack and a light guiding layer disposed on the first layer. The refractive index of the light guiding layer is higher than the refractive indices of the other layers of the layer stack. Each pixel of the plurality of pixels further has a third reflective layer that reflects light from the optoelectronic light source to uniformly illuminate the first pixel region. The third reflective layer forms an opening in the first layer where the optoelectronic light source is located. The first layer has a curved surface facing the optoelectronic light source, particularly the surface of the opening. The curved surface can function as a reflector such that light emitted substantially radially from the optoelectronic light source is reflected towards the first pixel region, particularly such that the first pixel region is uniformly illuminated. Also, the curved surface can be formed such that the output beam passing through the first pixel region has a desired shape. Thus, the curved surface can be used for beam shaping purposes.

[0251] The structured light scattering arrangement or the light scattering arrangement can be configured to scatter the light emitted from the optoelectronic light source such that the first pixel region is uniformly illuminated by the scattered light. In particular, the structured light scattering arrangement or the light scattering arrangement can be configured to scatter the light emitted from the optoelectronic light source such that the first pixel region is uniformly illuminated by the scattered light and a defined and / or sharp edge of the first pixel region is generated.

[0252] The first pixel region can have a central axis that is perpendicular to the first pixel region and passes through the center of the first pixel region. The central axis extends in a direction orthogonal to the first layer of the layer stack.

[0253] Each pixel of the plurality of pixels can further have a second pixel region. The second pixel region can be formed, for example, on the bottom surface of the layer stack. In some embodiments, the outer contour of the second pixel region can coincide with the outer contour of the first pixel region in a view perpendicular to the first pixel region. Thus, for example, when each pixel of the plurality of pixels is illuminated by light, it can be achieved that each pixel can be seen from both sides of the optoelectronic device.

[0254] The first pixel region and / or the second pixel region can have a circular, square, rectangular, or polygonal form in a view perpendicular to the first pixel region. Thus, the first pixel region and / or the second pixel region can have an outer contour that is circular, square, rectangular, or polygonal.

[0255] The optoelectronic light source can be arranged behind the first pixel region in a view perpendicular to the first pixel region and can be centered with respect to the central axis of the first pixel region. Thus, the central axis of the light source can be on the same line as the central axis of the first pixel region.

[0256] At least one optoelectronic light source can have an LED (light emitting diode) or a micro-LED (also called μLED), or an LED chip or a μLED chip. However, at least one optoelectronic light source can also have, for example, three LEDs or μLEDs that emit light of a selected color (in particular, any of red, green, or blue). Thus, each pixel of the plurality of pixels can form an RGB pixel.

[0257] At least one optoelectronic light source can have, for example, a volume-emitting LED or a μLED. Thus, at least one optoelectronic light source can emit light of a selected color in all directions. For example, with the help of a first reflective layer on the upper surface of the optoelectronic light source and optionally a second reflective layer on the bottom surface of the optoelectronic light source, the light emitted from the optoelectronic light source can be guided in a suitable manner. In some embodiments, it can be advantageous for the optoelectronic light source to emit light radially from its side surfaces. However, it can also be advantageous for the optoelectronic light source to emit light radially from its side surfaces and also vertically from its upper and / or bottom surfaces.

[0258] The first layer can be the only layer of the layer stack, or the layer stack can further have additional layers, such as a second layer and a third layer, and any number of further layers. The first layer can be sandwiched between the second layer and the third layer.

[0259] The first layer can preferably be at least partially transparent. Preferably, each layer of the layer stack is made of or at least contains a material that is at least partially transparent. Thus, the optoelectronic device can also be at least partially transparent.

[0260] In some embodiments, the optoelectronic device is an at least partially transparent pane, particularly a pane of a vehicle, and is preferably arranged between a cover layer and a carrier layer. At least one of the cover layer and the carrier layer can be at least partially transparent. The cover layer and the carrier layer can be, for example, glass layers such as those used for vehicle windows.

[0261] The structured light-scattering arrangement can be arranged in the layer stack, preferably above the first layer, between the first pixel region and the optoelectronic light source.

[0262] Additional structured light scattering arrangements can be arranged within the layer stack, preferably below the first layer, between the second pixel region and the optoelectronic light source.

[0263] In some embodiments, a structured light scattering arrangement disposed between the first pixel region and the optoelectronic light source above the first layer can be configured to scatter light from the optoelectronic light source such that the first pixel region is evenly illuminated by the scattered light. Additionally or alternatively, a structured light scattering arrangement disposed between the second pixel region and the optoelectronic light source below the first layer can be configured to scatter light from the optoelectronic light source such that the second pixel region is evenly illuminated by the scattered light.

[0264] The structured light scattering arrangement can be embedded in the first layer, particularly completely embedded. The structured light scattering arrangement embedded in the first layer can be configured to scatter light from the optoelectronic light source such that the first pixel region and / or the second pixel region is evenly illuminated by the scattered light.

[0265] The structured light scattering arrangement can have at least a first light scattering element and at least a second light scattering element. The second light scattering element can be radially farther away from at least one optoelectronic light source than the first light scattering element. Thus, "in a radial direction" can be understood as the direction perpendicular to the central axis of the first pixel region.

[0266] Also, the structured light scattering arrangement can have a plurality of light scattering elements. The plurality of light scattering elements can be more than two, more than five, more than ten, or more than fifty.

[0267] At least the first light scattering element and the second light scattering element can each have a defined geometric form. The form is preferably the same for at least the first light scattering element and the second light scattering element. Preferably, at least the first light scattering element and the second light scattering element each have a defined particle concentration of scattering particles within their defined geometric form.

[0268] At least the first light scattering element and the second light scattering element can each form a ring-shaped structure around at least one optoelectronic light source. Preferably, the ring-shaped structure has a circular, square, rectangular, or polygonal form when viewed from above and / or preferably, the ring-shaped structure has a circular, square, rectangular, or polygonal form in a cross-sectional plane including the central axis of the first pixel region.

[0269] In some embodiments, the cross-sectional area of the first light scattering element can be smaller than the cross-sectional area of the second light scattering element. The cross-sectional area is within a cross-sectional plane including the central axis of the first pixel region.

[0270] When the structured light scattering arrangement has a plurality of light scattering elements, the cross-sectional area of the light scattering elements can depend on the radial distance between each light scattering element and the optoelectronic light source. In particular, the cross-sectional area increases with the increase in distance. Thus, a light scattering element closer to the optoelectronic light source can have a smaller cross-sectional area than a light scattering element radially farther away from the optoelectronic light source. The cross-sectional area is within the same cross-sectional plane including the central axis of the first pixel region.

[0271] In some embodiments, the particle concentration of the scattering particles in the first light scattering element is lower than the particle concentration of the scattering particles in the second light scattering element.

[0272] When the structured light scattering arrangement has a plurality of light scattering elements, the particle concentration of the scattering particles in the light scattering elements can increase along with the radial distance between each light scattering element and the optoelectronic light source. Therefore, for a light scattering element closer to the optoelectronic light source, the particle concentration of the scattering particles can be made lower than that of a light scattering element farther away from the optoelectronic light source in the radial direction.

[0273] The optoelectronic light source, the first reflective layer, and optionally the second reflective layer can form an optoelectronic subassembly. The optoelectronic subassembly can be embedded in the first layer such that the upper surface of the optoelectronic subassembly is disposed in the same plane as the upper surface of the first layer and / or the bottom surface of the optoelectronic subassembly is disposed in the same plane as the bottom surface of the first layer. Therefore, the optoelectronic subassembly can have, for example, approximately the same height as the first layer.

[0274] The structured light scattering arrangement can particularly have an electro-wetting device disposed between the first layer and the first pixel region within the layer of the layer stack.

[0275] The electro-wetting device can have a first electrode, particularly at least partially transparent electrode, and a second electrode, particularly at least partially transparent electrode. Between the first electrode and the second electrode, a plurality of oil-coated droplets constituting the light scattering particles can be disposed. The plurality of oil-coated droplets can be embedded in a first medium. The first medium can particularly comprise or consist of air or any fluid.

[0276] When a voltage is applied to the two electrodes, the electro-wetting device forms a film of light scattering particles to scatter the light from the optoelectronic light source so that the first pixel region is uniformly illuminated by the scattered light.

[0277] The electro-wetting device can be configured to form a transparent layer, for example, when no voltage is applied to the two electrodes, and to form a semi-transparent layer when a voltage is applied to the two electrodes.

[0278] The structured light-scattering arrangement can have a first cavity that extends between the first layer and the first pixel region over the entire length and width of the first pixel region. Thus, the first cavity can be below the first pixel region and extend over the entire length and width of the first pixel region. The first cavity can be formed by a spacer that separates the first layer from one or more further layers of the layer stack.

[0279] In some embodiments, the optoelectronic device has a first fluid pump for selectively delivering a first fluid into the first cavity or emptying the first cavity. The first fluid can contain light-scattering particles. Thus, when the first cavity is filled with the first fluid, light from the optoelectronic light source can be scattered by the first fluid so that the first pixel region is evenly illuminated by the scattered light.

[0280] The structured light-scattering arrangement can have a series of interconnected fluid flow paths. The interconnected fluid flow paths can extend along the length and width directions of the first pixel region within the layers of the layer stack below the first pixel regions of a plurality of pixels. When viewed from above, the fluid flow paths can be arranged behind the boundary regions of a grid-like structure that separates adjacent first pixel regions from each other.

[0281] The optoelectronic device can further have a second fluid pump for selectively delivering a second fluid into the fluid flow paths or emptying the fluid flow paths. The second fluid contains light-absorbing particles, in particular black particles. Thus, when the fluid flow paths are filled with the second fluid, the light emitted from the optoelectronic light source is absorbed by the second fluid, and as a result, defined and / or sharp edges of the first pixel region are generated.

[0282] The outer surface of the light scattering arrangement forming the first portion of the first layer that surrounds the optoelectronic light source in the circumferential direction can be aligned with the outer edge of the first pixel region when viewed in a view perpendicular to the first pixel region.

[0283] The second portion of the first layer can surround the first portion of the first layer in the circumferential direction, and the refractive index of the first portion can be different from (in particular, greater than) the refractive index of the second portion. Thus, the light from the optoelectronic light source is reflected when passing through the first portion of the first layer and is incident on the second portion of the first layer by total reflection. Thus, the light scattering arrangement forming the first portion of the first layer can be configured to reflect light at the boundary between the first portion and the second portion of the first layer and scatter the light so that the first pixel region is uniformly illuminated by the scattered light.

[0284] The layer stack can have a light guiding layer disposed on the first layer. The first layer can be disposed between the first pixel region and the light guiding layer. The refractive index of the light guiding layer can be higher than the refractive index of the other layers of the layer stack. The light emitted from the optoelectronic light source into the first layer can be coupled to the light guiding layer and thereby can be distributed radially with respect to the central axis. The light scattering arrangement of the first portion of the first layer can have light scattering particles that are very close to the interface between the light guiding layer and the first layer. Also, such light scattering particles can scatter the light propagating within the light guiding layer. Thus, the light can be recombined from the light guiding layer, particularly towards the first pixel region. Thereby, uniform illumination of the first pixel region can be obtained.

[0285] The layer stack can further have a scattering layer disposed on the opposite side of the light guiding layer on the first layer. This scattering layer can include light scattering particles to uniformly illuminate the first pixel region. The light scattering arrangement of the first portion of the first layer can have the scattering layer such that the light scattering particles form a single layer having a height higher than the height of the first layer and / or the optoelectronic light source.

[0286] The layer stack can further have a scattering layer disposed on the side opposite to the light guiding layer above the first layer. This scattering layer can contain light scattering particles to uniformly illuminate the first pixel region. The light from the optoelectronic light source is reflected or totally reflected from the lower interface of the scattering layer, but can be scattered by the light scattering particles within the scattering layer. Thus, uniform illumination of the first pixel region above the scattering layer can be obtained.

[0287] The layer stack can further have a scattering layer disposed on the side opposite to the first layer on the light guiding layer. This scattering layer can contain light scattering particles to uniformly illuminate a second pixel region opposite to the first pixel region, and this scattering layer can be made very thin, in particular, it can have a thickness approximately the same as the diameter of one light scattering particle.

[0288] The light from the optoelectronic light source can be coupled to the light guiding layer disposed on the first layer and can be separated from the light guiding layer by the scattering layer disposed on the light guiding layer. Thus, the scattering layer can be configured to scatter the light from the optoelectronic light source so that the second pixel region opposite to the first pixel region is uniformly illuminated.

[0289] The layer stack can include additional layers, such as one or more protective layers. Also, the optoelectronic device can be disposed between two at least partially transparent layers, for example, laminated between the two layers. The layer can be a glass plate. Also, one side of the optoelectronic device can be laminated on a layer that can be at least partially transparent or opaque.

[0290] In some embodiments, the optoelectronic device has a plurality of optoelectronic light sources disposed on a first layer. The first layer is, for example, an intermediate layer disposed between a cover layer and a carrier layer. The first layer comprises or consists of at least partially transparent material, and each optoelectronic light source of the plurality of optoelectronic light sources has an individual light converter that converts light emitted from a corresponding light source to emit converted light, or at least partially converted light such as, for example, white light. The light converter of each optoelectronic light source is disposed on the first layer and / or on the corresponding optoelectronic light source.

[0291] The term "individual light converter" can mean that one light converter is assigned to exactly one optoelectronic light source, and thus each optoelectronic light source comprises its own light converter that converts light emitted from the corresponding light source to emit converted or at least partially converted light.

[0292] In some embodiments, the light converters of different light sources are separated from each other. In other words, the light converters are spaced apart and not in contact with each other.

[0293] In some embodiments, the optoelectronic light sources are distributed across a first surface region of the first layer. These can be distributed across the first surface region in an irregular pattern or in a regular pattern, and they can form any desired shape or symbol, and each optoelectronic light source comprises its own light converter. The light converters can be different, and as a result, different converted or at least partially converted light can be obtained from different optoelectronic light sources.

[0294] In some embodiments, the optoelectronic device forms at least a partially transparent pane of a vehicle, particularly a windshield or window of the vehicle. Thus, the pane, particularly the windshield or window, has a plurality of optoelectronic light sources each having an individual light converter. The optoelectronic light sources can at least partially illuminate the pane and / or can display information on at least a part of the pane.

[0295] The optoelectronic device can be, for example, a headliner, a roof, or part of another surface, such as, for example, the outer surface of the vehicle. Thus, the optoelectronic device can have a three-dimensional shape and / or can be arranged on a curved surface. Thus, the headliner or the outer surface can have a plurality of optoelectronic light sources, each source having an individual light converter for at least partially illuminating the headliner or the outer surface and / or for displaying information on at least a part of the headliner or the outer surface.

[0296] In some embodiments, LEDs are used as optoelectronic light sources. The LEDs can particularly be referred to as mini-LEDs. The mini-LEDs are, for example, small LEDs with an edge length of less than 200 μm, particularly less than 40 μm, particularly in the range from 200 μm to 10 μm. Another range is from 150 to 40 μm. However, the LEDs can also be referred to as micro-LEDs (also called μLEDs) or μLED chips, particularly when the edge length is in the range from 100 μm to 10 μm.

[0297] The mini-LEDs or μLED chips can be used as optoelectronic light sources. The mini-LEDs or μLED chips can form pixels or sub-pixels and can emit light of a selected color. The mini-LEDs or μLED chips can, in a preferred embodiment, be non-packaged semiconductor chips. Being non-packaged can mean that the chip does not have a housing around its semiconductor layer, such as, for example, an unpackaged semiconductor die.

[0298] A light converter corresponding to a optoelectronic light source can include conversion particles for converting the light emitted from the optoelectronic light source into light of a selected color, such as, for example, green, blue, red, or yellow. However, the light converter corresponding to the optoelectronic light source can also include conversion particles for partially converting the light emitted from the optoelectronic light source to emit mixed light, such as, for example, white light.

[0299] Converting at least partially the light emitted from the optoelectronic light source to emit white light can have the advantage of simplifying the wiring and control of the light source compared to mixing white light using RGB pixels. For example, in a transparent front glass or a headliner, the wiring and control should be minimized to ensure the transparency of the optoelectronic device.

[0300] Also, white light may be required to reproduce the effect of light on a vehicle's headliner, particularly a transparent headliner, or a reading light disposed on the headliner or a vehicle's side window. In some embodiments, providing an optoelectronic light source that emits white light to display, for example, a logo or a symbol can be an aspect of style.

[0301] In some embodiments, each light converter includes conversion particles having a diameter of at least about 1 μm to 30 μm, particularly a diameter of at least about 3 μm to 10 μm. Such small light conversion particles can be used, for example, in combination with small LEDs because the small conversion particles help to ensure the desired conversion of the light emitted from the LEDs. Further, when the optoelectronic light source is adhered to a first layer, for example, by the use of an adhesive, and the adhesive includes the conversion particles and thus forms the light converter, the conversion particles must be small enough to fit into the gap between the optoelectronic light source and the first layer and convert the light emitted from the optoelectronic light source.

[0302] In some embodiments, each light converter includes quantum dots that function as conversion particles. Quantum dots are small semiconductor particles on the order of a few nanometers in size and can have optical and electronic properties that differ from those of larger particles due to quantum mechanics.

[0303] The light converter is preferably configured to convert light of a first wavelength emitted from a optoelectronic light source into light of a second wavelength, where the first wavelength is different from the second wavelength, and in particular, the first wavelength is smaller than the second wavelength. By using different conversion particles, the light converter can convert light into various colors, such as red, green, blue, and yellow.

[0304] In some embodiments, the optoelectronic light source is distributed across a first surface region of a first layer, where the first surface region is larger than the total cross-sectional area of the optoelectronic light source, and in particular at least about 30 times larger. The cross-sectional area of the optoelectronic light source is defined by a cross-section through the optoelectronic light source in a plane that is at least substantially parallel to the first surface region, or rather, in a plane that is at least substantially perpendicular to the main emission surface of the optoelectronic light source.

[0305] In some embodiments, the first surface region is larger than the total emission surface of the optoelectronic light source distributed across the first surface region of the first layer, and in particular at least about 30 times larger.

[0306] In some embodiments, the optoelectronic light source is distributed across the first surface region of the first layer in an irregular pattern. This can mean that the optoelectronic light source is not distributed in a regular matrix having a plurality of regularly arranged rows and columns across the first surface region of the first layer. However, the irregular pattern of the optoelectronic light source can include a single row or column of optoelectronic light sources arranged within the more irregularly distributed optoelectronic light sources.

[0307] In some embodiments, the optoelectronic light sources are distributed over a first surface region of the first layer in a regular pattern. This can mean that the optoelectronic light sources are distributed in a matrix having at least one row and at least one column over the first surface region of the first layer, and each optoelectronic light source can be individually addressable.

[0308] In some embodiments, each light converter is disposed within the beam path of light emitted from a corresponding optoelectronic light source.

[0309] In some embodiments, each light converter has the form of a droplet that covers or encapsulates a corresponding optoelectronic light source. The droplet can, for example, comprise or consist of an adhesive having conversion particles. Thus, the droplet can form a light converter. The adhesive can be dropped onto the optoelectronic light source, particularly one drop per optoelectronic light source, at least substantially in a liquid state. The adhesive cures after forming a droplet on each optoelectronic light source by capillary forces.

[0310] In some embodiments, each light converter is disposed between the first layer and a corresponding optoelectronic light source. Each light converter can, for example, comprise an adhesive for fixing the corresponding optoelectronic light source to the first layer. Thus, the light converter can form a glue fillet to fix the corresponding optoelectronic light source to the first layer.

[0311] In some embodiments, each light converter is disposed on the first layer, on the side opposite to a corresponding optoelectronic light source and facing the light-emitting surface of the corresponding optoelectronic light source. Thus, each light converter and the corresponding optoelectronic light source can be disposed on two different sides of the first layer.

[0312] In some embodiments, each light converter is formed as a platelet disposed (in particular, adhered) on the first layer and facing the emission surface of the corresponding optoelectronic light source. Each platelet can include conversion particles disposed within a matrix material such as, for example, silicon, glass, or polysiloxane. Alternatively, each light converter can be printed directly on the first layer by using each material (in particular, ink) containing the conversion particles.

[0313] In some embodiments, a light-blocker extends circumferentially around each light converter and, in particular, forms a light-blocking structure on the first layer. In other words, the light converters are each surrounded by the light-blocker, particularly when viewed in a view perpendicular to the first surface region of the first layer. The light-blocker can include, for example, black light-blocking particles that block the light emitted from the optoelectronic light source. Thus, the light can be coupled along the optical path and is not blocked, for example, in a direction perpendicular to the main emission surface of the optoelectronic light source. In particular, the light-blocker can block the output coupling of the light at the side surfaces of the light converter.

[0314] In some embodiments, the contact regions between the first layer and each light converter and / or the contact regions between the first layer and each optoelectronic light source can be roughened. Thereby, the light from the optoelectronic light source can be coupled to the light converter in an improved manner. The roughening can be achieved, for example, by processing the contact regions using laser light. However, any technique or material known from the prior art for coupling the light from the optoelectronic light source to the converter can be used.

[0315] In some embodiments, each light converter and optionally the corresponding optoelectronic light source are embedded in the first layer. The light converter can be completely embedded in the first layer such that, for example, the outer surface of the light converter and the outer surface of the first layer are disposed in the same plane. Also, the light converter can protrude from the first layer or recede into the first layer.

[0316] In some embodiments, each light converter is embedded in the first layer on the side opposite to the corresponding optoelectronic light source and faces the emission surface of the corresponding optoelectronic light source. In some embodiments, each light converter is embedded in the first layer on the same side as the corresponding optoelectronic light source is disposed.

[0317] The light converter can be embedded in the first layer, for example, by "hot embossing" the first layer and pressing the light converter into the first layer, or by filling the resulting cavity with the light converter. This can be advantageous for reducing the topology of the first layer as compared to, for example, adhering the light converter onto the first layer.

[0318] In some embodiments, the optoelectronic device further includes a set of light sources that do not have light converters. Thus, the optoelectronic device has a set of light sources associated with light converters and a set of light sources not associated with light converters.

[0319] In some embodiments, the light converter includes at least a first set of light converters and a second set of light converters. The second set of light converters is configured to convert light at a different wavelength than the first set of light converters. Thus, the light emitted from the optoelectronic light source can be converted or at least partially converted into at least two lights among white light and colored lights (such as, for example, green light, blue light, red light, or yellow light).

[0320] In some embodiments, the optoelectronic device has at least one optoelectronic light source. The at least one optoelectronic light source is disposed on the first layer between the cover layer and the first layer. The first layer and the cover layer each include or consist of at least a partially transparent material, and the optoelectronic device is a vehicle window deflector.

[0321] A wind deflector can be a small front windshield for a vehicle, especially made of plastic or glass. However, the wind deflector can also be an extension of the existing front windshield of the vehicle. Contrary to its appearance, the design of the wind deflector can be very durable and stable even when the vehicle is traveling at high speed. The wind deflector can prevent the vehicle driver and passengers from being exposed to wind and flying debris.

[0322] In some embodiments, the wind deflector can be an accessory that can be attached to parts of the vehicle that are often open during driving. Such parts can be, for example, windows and sunroofs. The wind deflector can prevent the driver and passengers from being exposed to the wind. Furthermore, it can reduce noise and prevent flying debris from entering the vehicle.

[0323] In some embodiments, the wind deflector can be attached to, for example, a two-wheeled, three-wheeled, or four-wheeled vehicle such as a motorcycle, or can be attached to, for example, a quad. In some embodiments, the wind deflector can be attached to the handlebars of a two-wheeled, three-wheeled, or four-wheeled vehicle such as a motorcycle, or can be attached to the handlebars of, for example, a quad. Thus, the vehicle can be, for example, a motorcycle, quad, watercraft, open-top race car, or other two-wheeled, three-wheeled, or four-wheeled vehicle. Also, the vehicle can be a watercraft such as a boat or ship.

[0324] In some embodiments, the vehicle is neither a car nor a truck.

[0325] In some embodiments, the wind deflector can be, for example, the front windshield of a two-wheeled, three-wheeled, or four-wheeled vehicle such as a motorcycle, quad, or trike, or an extension of the front windshield. Other examples can be, for example, a watercraft such as a boat, or a topless race car such as a Formula One race car.

[0326] In some embodiments, the first layer of the optoelectronic device comprises or consists of an elastic plastic material such as, for example, polyethylene terephthalate (PET), polycarbonate (PC), or polyethylene naphthalate (PEN). Thus, the first layer and optionally the entire optoelectronic device can be deformable, in particular bendable. However, the bendability of the first layer and in particular of the entire optoelectronic device can be limited so that it can withstand well and be rigid even when the vehicle is at high speed.

[0327] In some embodiments, the cover layer comprises or consists of an elastic plastic material, in particular an elastic foil such as, for example, polyvinyl chloride (PVC), polyvinyl butyral (PVB), or ethylene-vinyl acetate (EVA). Thus, at least one optoelectronic light source can be arranged on the first layer, and the elastic foil can be laminated on at least one optoelectronic light source.

[0328] In some embodiments, the first layer and the cover layer do not comprise glass or a glass-like material. The wind deflector can be different from a typical front windshield of a vehicle such as a car in that the wind deflector does not have a cover layer made of glass or a glass-like material. Thus, the wind deflector can be different from a "normal" window made of, for example, safety glass.

[0329] In some embodiments, the optoelectronic device has one or more additional layers disposed above the cover layer and / or below the first layer. All of the additional layers can, in some embodiments, be glass-free. In particular, all of the layers of the optoelectronic device can be glass-free. However, the optoelectronic light source can include a material such as glass in one or more of its components.

[0330] In some embodiments, at least one optoelectronic light source is an LED. The LED can, in particular, be referred to as a mini-LED. This mini-LED is, for example, a small LED with an edge length of less than 200 μm, in particular less than 40 μm, in particular in the range of 200 μm to 10 μm. Another range is 150 to 40 μm. However, the LED can, in particular, also be referred to as a micro-LED (also called μLED) or μLED chip when the edge length is in the range of 100 μm to 10 μm.

[0331] The mini-LED or μLED chip can be used as an optoelectronic light source. The mini-LED or μLED chip can form a pixel or sub-pixel and emit light of a selected color. The mini-LED or μLED chip can, in a preferred embodiment, be an unpackaged semiconductor chip. Being unpackaged can mean that the chip does not have a housing around its semiconductor layer, such as an unpackaged semiconductor die, for example.

[0332] In some embodiments, at least one optoelectronic light source can be a volume emitter or a surface emitter. The volume emitter can emit light through a surface area located, for example, between contact pads disposed on its bottom surface, on its top surface, on its side surfaces, and on its bottom surface. The surface emitter can emit light on its top surface.

[0333] In some embodiments, at least one optoelectronic light source is a plurality of optoelectronic light sources arranged to form a symbol or an indicator when the optoelectronic device is in operation. The symbol or indicator can be, for example, a navigation symbol, a warning symbol, a daytime running light, a position light, a charge level indicator, a speed indicator, or even more status indicators or driving information.

[0334] In some embodiments, at least one optoelectronic light source is a plurality of optoelectronic light sources arranged to form a display. By using the display, driving information or status indicators, such as actual driving information like vehicle speed, or status indicators can be displayed.

[0335] During the operation of the optoelectronic device, the symbol or indicator can be made visible to the user of the optoelectronic device, particularly of the vehicle. In other words, the symbol or indicator can be within the line of sight of the user of the optoelectronic device when the optoelectronic device is in operation. The line of sight can be, in particular, the direction in which the user looks forward at the optoelectronic device from their eyes when the user is in the driving position.

[0336] In some embodiments, a light shield is disposed on either the first layer or the cover layer and faces at least one optoelectronic light source. The light shield can block the light emitted from at least one optoelectronic light source. Thus, it can be obtained that the light emitted from at least one optoelectronic light source exits the optoelectronic device only in a desired direction. Thereby, it is possible to prevent the user or a third party of the optoelectronic device from being visible.

[0337] In some embodiments, the light shield is arranged to block the emission of light through the first layer or through the cover layer. Thus, the light shield can be disposed between at least one optoelectronic light source and the user of the optoelectronic device, or between at least one optoelectronic light source and a third party.

[0338] In some embodiments, the vehicle has an optoelectronic device according to any one of the above-described manners. The optoelectronic device is a window deflector of the vehicle, and at least one optoelectronic light source of the optoelectronic device is arranged so that it can be seen by the driver of the vehicle or a person outside the vehicle.

[0339] In some embodiments, at least one optoelectronic light source has a first set of light sources. The first set of light sources is arranged so that the first set of light sources can be seen by the driver during the operation of the optoelectronic device. In other words, the first set of light sources can be within the line of sight of the user of the vehicle while the optoelectronic device is operating. The line of sight can be, in particular, the direction in which the user looks forward at the optoelectronic device from the user's eyes when the user is in the driving position.

[0340] In some embodiments, the first set of light sources is configured to indicate information to the driver, and preferably, the first set of light sources forms a symbol or an indicator. The symbol or indicator can be, for example, a navigation symbol, a warning symbol, a daytime running light, a position light, a charge level indicator, a speed indicator, or even more status indicators or driving information.

[0341] In some embodiments, at least one optoelectronic light source has a second set of light sources. The second set of light sources is arranged so that the second set of light sources can be seen from the front and / or side of the vehicle during the operation of the optoelectronic device. Therefore, the second set of light sources can be seen by a person outside the vehicle.

[0342] In some embodiments, the optoelectronic device has a layer stack including a carrier layer, a cover layer, and a first layer. The first layer is, in particular, an intermediate layer disposed between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is disposed on the first layer, and at least one layer of the layer stack, preferably all layers of the layer stack, is at least partially transparent. The layer stack has at least one layer including particles that increase the thermal conductivity of the layer, and / or at least one thermal conductive layer disposed between two adjacent layers of the layer stack.

[0343] The electronic or optoelectronic element can be any element that generates heat during its operation, but in the following description, reference is mainly made to an optoelectronic light source.

[0344] Due to the increase in thermal conductivity, at least one layer of the layer stack contains particles with high thermal conductivity. The at least one layer can be one of the carrier layer, the cover layer, and the first layer, or another layer of the layer stack. The particles provide the thermal conductivity of each layer such that the overall thermal conductivity of the layer is at least 25% higher than the thermal conductivity of each layer without the particles.

[0345] The layer containing particles with high thermal conductivity and / or the at least one thermal conductive layer can be configured to transport heat generated from at least one optoelectronic light source away from the at least one optoelectronic light source. At the same time, the particles can be disposed within at least one layer of the layer stack such that the desired transparency of the device is achieved, and the thermal conductive layer is designed such that the desired transparency of the device is achieved.

[0346] The layer containing particles with high thermal conductivity and / or at least one thermal conduction layer can be configured to transport heat away from an electronic element within the layer stack, in particular. Such an electronic element can be, for example, a micro integrated circuit (μIC) or a micro integrated circuit chip. Other examples of electronic elements are drivers, sensors, and detectors.

[0347] The formulation that something is "arranged on" something does not necessarily have to be understood as something being directly arranged on something, and can include other elements arranged therebetween. Thus, the formulation that something is arranged on something can also be understood as something being indirectly arranged above something or being embedded in something. In particular, the formulation that at least one optoelectronic light source is arranged on a first layer can be understood as the optoelectronic light source being directly arranged on the upper surface of the first layer, or as the optoelectronic light source being arranged above the upper surface of the first layer, although other elements may be arranged between the optoelectronic light source and the upper surface of the first layer. However, the formulation can also be understood as at least one optoelectronic light source being arranged on the first layer and being partially or completely embedded in the first layer.

[0348] At least one thermal conduction layer can include a thermally conductive mesh, for example, a metal mesh, in particular, a copper mesh. The mesh can have knots and interconnects between the knots, and preferably, at least most of the interconnects are unbroken. Thus, at least one thermal conduction layer can be structured to have a plurality of thin thermally conductive lines connected to each other.

[0349] The mesh can have a regular or irregular pattern, and the irregular pattern can be preferred because it can increase the transparency of the heat conduction layer. This reason may be that the irregular pattern may become more difficult to perceive with the human eye.

[0350] In some embodiments, at least one heat conduction layer has an electrical circuit path electrically connected to the contact pad of the optoelectronic light source. Thereby, the width of the electrical circuit path can be at least half of the width of the optoelectronic light source. Thus, at least one heat conduction layer can be made of a material with good electrical conductivity and thermal conductivity, such as copper, silver, gold, and aluminum. Thus, the heat conduction layer can be configured to transport the heat generated from at least one optoelectronic light source away from the at least one optoelectronic light source and supply electrical energy to the at least one optoelectronic light source. In order to ensure sufficient cooling of at least one optoelectronic light source, the width of the electrical circuit path can be increased.

[0351] In some embodiments, at least one heat conduction layer has a plurality of electrical circuit paths. The plurality of electrical circuit paths are electrically connected to the same contact pad of the optoelectronic light source and extend parallel to each other at least in a section of the electrical circuit paths. The electrical circuit paths can be made particularly thin compared to the width of a single electrical circuit path connected to the contact pad, and can also be made particularly thin compared to the width of the optoelectronic light source.

[0352] In some embodiments, at least one of the electrical circuit paths has one or more blind conductive paths. The blind conductive path can be, for example, a conductive path having a free end. This free end is an end that is not connected to either at least one optoelectronic light source or a power source. The blind conductive path can function, for example, as a heat spreader that transports the heat generated from at least one optoelectronic light source away from the at least one optoelectronic light source.

[0353] The wire paths can be combined with a plurality of blind wire paths to form a pattern such as, for example, a herringbone pattern.

[0354] In some embodiments, at least one thermal conduction layer has one or more conductive lines that transport heat away from the optoelectronic light source, but the conductive lines are electrically disconnected from the optoelectronic light source. Thus, the optoelectronic light source can have additional contact pads that are electrically disconnected from the optoelectronic light source for transporting heat away from the optoelectronic light source. A conductive line for transporting heat away from the optoelectronic light source, but electrically disconnected from the optoelectronic light source, can be connected to an additional contact pad, but can be disconnected from a contact pad electrically connected to the optoelectronic light source. Thus, the thermal conduction layer can have at least one wire path electrically connected to the optoelectronic light source for transporting heat away from at least one optoelectronic light source. Further, the thermal conduction layer can serve to supply electrical energy to at least one optoelectronic light source. Further, the thermal conduction layer can have one or more conductive lines that transport heat away from the optoelectronic light source but are electrically disconnected from the optoelectronic light source.

[0355] In some embodiments, at least one thermal conduction layer has a coating, particularly a copper, palladium, or molybdenum coating. If at least one thermal conduction layer is made of a material with good electrical and thermal conductivity, such as a metal for example, the coating may reduce the visibility of the metal, which usually reflects light. However, the coating can also increase the thermal conductivity of the thermal conduction layer.

[0356] In some embodiments, at least one thermal conduction layer is disposed between the first layer and at least one optoelectronic light source. In some embodiments, at least one thermal conduction layer is disposed on the first layer and on the opposite side of at least one optoelectronic light source. Further, in some embodiments, a first thermal conduction layer is disposed between the first layer and at least one optoelectronic light source on the same side as at least one optoelectronic light source, and a second thermal conduction layer is disposed on the first layer on the opposite side of at least one optoelectronic light source.

[0357] The first thermal conduction layer or at least a portion of the first thermal conduction layer can be connected to at least one optoelectronic light source, for example, to transport heat generated from at least one optoelectronic light source away from the at least one optoelectronic light source and to supply electrical energy to the at least one optoelectronic light source. The second thermal conduction layer can, for example, transport heat generated from at least one optoelectronic light source away from the at least one optoelectronic light source. The second thermal conduction layer can be electrically disconnected from at least one optoelectronic light source.

[0358] In some embodiments, the layer stack further includes a first auxiliary layer disposed between the cover layer and the first layer and / or a second auxiliary layer disposed between the carrier layer and the first layer. The first and / or second auxiliary layer can be a leveling layer including or consisting of a material such as polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA), for example. When at least one optoelectronic light source disposed on the first layer protrudes from the upper surface of the first layer, the first auxiliary layer can form a leveling layer such that the protruding portion of the optoelectronic light source is embedded in the first auxiliary layer. The same applies to the protruding portion of at least one thermal conduction layer protruding from one of the layers of the layer stack, and the protruding portion can be embedded in the first and / or second auxiliary layer.

[0359] In some embodiments, at least one thermal conduction layer is disposed between the first auxiliary layer and the cover layer. In some embodiments, at least one thermal conduction layer is disposed between the second auxiliary layer and the carrier layer. Further, in some embodiments, a first thermal conduction layer is disposed between the first auxiliary layer and the cover layer, and a second thermal conduction layer is disposed between the second auxiliary layer and the carrier layer. In all three cases, the thermal conduction layer can transport, for example, heat generated from at least one optoelectronic light source away from the at least one optoelectronic light source, and in particular, is electrically disconnected from the at least one optoelectronic light source.

[0360] In some embodiments, at least one thermal conduction layer can have a conductive mesh that can be configured as a so-called "metal-mesh-sensor". The metal-mesh-sensor can be used to identify organic elements (especially human fingers) close to the metal mesh and the position of the fingers. Such metal-mesh-sensors are used in particular for touchscreens and displays with touch functionality. Thus, on the one hand, the thermal conduction layer can be used to transport heat generated from at least one optoelectronic light source away from the at least one optoelectronic light source, and further functions as a metal-mesh-sensor to enable a touch function for the optoelectronic device.

[0361] In some embodiments, particles with high thermal conductivity are disposed in the first auxiliary layer and / or the second auxiliary layer. The particles can provide the thermal conductivity of the first auxiliary layer and / or the second auxiliary layer such that the overall thermal conductivity of the layer is at least 25% higher than the thermal conductivity of the layer without the particles.

[0362] In some embodiments, the high thermal conductivity particles are made of at least partially transparent materials such as, for example, glass particles or ceramic particles. In some embodiments, the high thermal conductivity particles are silicon dioxide (SiO2) particles. In particular, the high thermal conductivity particles can have a refractive index that is at least approximately the same as that of the material of the layer in which the particles are disposed. In some embodiments, the particles can be made of a material having a specific phase transition temperature. At this temperature, the short-circuit temperature peak is buffered to some extent.

[0363] In some embodiments, at least one of the layers of the layer stack is colored. In some embodiments, at least one auxiliary layer disposed on the opposite side of at least one optoelectronic light source from the main emission direction of the at least one optoelectronic light source is colored. The colored layer can, for example, improve the optical properties of the optoelectronic device. However, the colored foil can increase the internal temperature of the layer stack. Therefore, it can be advantageous that the colored layer is not disposed in the main emission direction of the at least one optoelectronic light source.

[0364] In some embodiments, a reflective layer is disposed between two layers of the layer stack. The reflective layer is configured to reflect light in the ultraviolet and / or infrared spectrum but transmit light in the visible spectrum. Preferably, the reflective layer is disposed on the first layer and between the first layer and at least one optoelectronic light source. In some embodiments, the reflective layer is disposed between at least one optoelectronic light source and the colored layer, and the reflective layer and the colored layer are not disposed in the main emission direction of the at least one optoelectronic light source.

[0365] In some embodiments, at least one thermal conduction layer is a coating, in particular, a carbon nanotube (CNT), graphene, or indium tin oxide (ITO) coating. In some embodiments, at least one thermal conduction layer can be a coating on the surface of the cover layer facing the first layer, or at least one thermal conduction layer can be a coating on the surface of the carrier layer facing the first layer. Further, in some embodiments, the first thermal conduction layer can be a coating on the surface of the cover layer facing the first layer, and the second thermal conduction layer can be a coating on the surface of the carrier layer facing the first layer.

[0366] In some embodiments, the optoelectronic device has a plurality of optoelectronic light sources disposed on the first layer. The plurality of optoelectronic light sources are particularly disposed between the cover layer and the first layer. A second layer is disposed above the plurality of optoelectronic light sources, and the second layer has a plurality of light scattering structures. Each light scattering structure is associated with one of the plurality of optoelectronic light sources, and each light scattering structure is individually designed, in particular, by using focused light, in particular laser light, according to the operating parameters of the corresponding optoelectronic light source.

[0367] The formulation that something is "arranged on" something does not necessarily mean that something is directly arranged on something, and may include other elements disposed therebetween. Thus, the formulation that something is arranged on something can also be understood as being indirectly arranged above something or being embedded in something. In particular, the formulation that a plurality of optoelectronic light sources are arranged on the first layer can be understood as the optoelectronic light sources being directly arranged on the upper surface of the first layer, or the optoelectronic light sources being arranged above the upper surface of the first layer, although other elements may be disposed between the optoelectronic light sources and the upper surface of the first layer. However, the formulation can also be understood as the optoelectronic light sources being arranged on the first layer and being partially or completely embedded in the first layer.

[0368] Each light scattering structure can be disposed in a second layer above the corresponding optoelectronic light source so as to scatter the light emitted from the optoelectronic light source to which the light scattering structure corresponds. In particular, each light scattering structure can scatter the light emitted from the corresponding optoelectronic light source such that the luminance of the light passing through the light scattering structure is reduced, or such that the conversion efficiency is changed (e.g., improved) by scattering the unconverted light and returning it to the converter of the corresponding optoelectronic light source.

[0369] By using individually designed light scattering structures, the uniformity of the optoelectronic device can be increased. For this purpose, the individually designed light scattering structures can be disposed above the optoelectronic light sources. Since the light sources typically emit light with slightly different luminance or color values, the scattering structures can be designed to compensate for this difference, for example, to achieve a more uniform luminance or color on a display. Further, for example, an improvement in uniformity can be obtained with respect to the color reproduction provided by the optoelectronic device. Thus, the scattering structure can be individually configured according to the operating parameters of the corresponding optoelectronic light source, for example, the luminance or color value of the light emitted from a particular light source, so that the light emitted from the corresponding optoelectronic light source adapts the light so as not to impair the overall uniformity of the optoelectronic device.

[0370] Another advantage of such individually designed light scattering structures is that the binning process of the optoelectronic light sources can be simplified before the optoelectronic light sources are disposed on the first layer. Since the uniformity of the optoelectronic device can be adjusted by using individually designed light scattering structures, a wider range of operating parameters can be selected for the bins. The larger the range of the operating parameters of the bins, the more likely the values of the operating parameters of the individual optoelectronic light sources are to be different, and the optoelectronic light sources are accordingly less expensive. At the same time, the uniformity of the optoelectronic device can be increased. This is in contrast to tighter binning, because the tighter the binning, the more expensive the sorting process becomes.

[0371] The individually designed light scattering structure can also enable the calibration of the operating parameters (e.g., luminance or color values) of the optoelectronic device according to customer requirements.

[0372] In some embodiments, at least one, and preferably all, optoelectronic light sources have a light converter. The light converter is preferably disposed between the optoelectronic light source and the second layer. The light converter is preferably configured to convert light of a first wavelength emitted from the optoelectronic light source into light of a second wavelength, where the first wavelength is different from the second wavelength, and in particular, the first wavelength is smaller than the second wavelength. By using different light converters, the optoelectronic light source can emit light of various colors, such as red, green, blue, and yellow.

[0373] By using an individually designed light scattering structure, the accuracy of the selection of the amount of conversion particles in the light converter can be reduced because the uniformity of the optoelectronic device, particularly with respect to color, can be readjusted by using an individually designed light scattering structure. This can be advantageous because the process of controlling the amount of conversion particles in the light converter can be simplified. In particular, in the case of small optoelectronic light sources and thus small light converters, this can be advantageous because the amount of required conversion particles in the light converter decreases with the size of the light converter.

[0374] The operating parameters that can affect the uniformity of the optoelectronic device are, for example, - the wavelength of the emitted light of each optoelectronic light source, - the amount of conversion particles in the light converter disposed above the optoelectronic device and thus the wavelength of the converted light, - the color value of the emitted light of each optoelectronic light source, and / or - the luminance of each optoelectronic light source, can be.

[0375] In some embodiments, each light scattering structure is individually designed such that light within a defined range of operating parameters is provided by the optoelectronic device.

[0376] In some embodiments, the operating parameter is the luminance of the corresponding optoelectronic light source. Each light scattering structure can be individually designed according to the luminance of the corresponding optoelectronic light source. For example, each light scattering structure can reduce the luminance of the light emitted from the corresponding optoelectronic light source to a defined level such that the optoelectronic device provides uniform light within a defined range of luminance. The defined range can be, for example, within 50% or less of the luminance of the darkest optoelectronic light source.

[0377] In some embodiments, at least one optoelectronic light source is not associated with a light scattering structure. The optoelectronic light source not associated with a light scattering structure can be, for example, the darkest optoelectronic light source among a plurality of optoelectronic light sources. Thus, the luminance of the emitted light of this darkest optoelectronic light source can be a reference value for individually designing the light scattering structure. Each light scattering structure can be individually designed to reduce the luminance of the light emitted from the corresponding optoelectronic light source to at least approximately the level of the reference value. However, an optoelectronic light source that emits light having a luminance that at least approximately correlates with the reference value may not have a corresponding light scattering structure.

[0378] In some embodiments, the operating parameter is the color value of the light emitted from the optoelectronic light source. Each light scattering structure can be designed individually according to the color value of the light emitted from the corresponding optoelectronic light source, particularly after the light has been converted by the converter of the corresponding optoelectronic light source. Each light scattering structure can, for example, improve the conversion efficiency by scattering the unconverted light and returning it to the converter. The color values can be changed, for example, in steps of 0.1, in each of the directions x and y of the CIE xyY color space, corresponding to approximately 100 color points. The change in the color value is particularly to obtain the desired color value corresponding to the color value provided by the selected optoelectronic light source. In the CIE xyY color space, the Y parameter can be a measure of the luminance of the color, and the chromaticity can be specified by two derived parameters x and y. The color values can, in some embodiments, correlate with the so-called "tristimulus values".

[0379] In some embodiments, each light scattering structure is associated with an optoelectronic light source that provides a specific color (e.g., red, green, or blue, etc.), particularly after the light has been converted by the converter of the corresponding optoelectronic light source, but is designed individually such that the color value is within a predetermined range with respect to the color value of the light provided by one of the selected optoelectronic light sources. The predetermined range can be within a range of a difference (delta) of 0.1, 0.05, or 0.03 in each of the directions x and y of the CIE xyY color space with respect to the color value of the light provided by the selected optoelectronic light source.

[0380] In some embodiments, different light scattering structures scatter light in different manners, and in particular, each light scattering structure scatters light in a different manner. The first light scattering structure can, for example, scatter a first portion of the light emitted from the corresponding optoelectronic light source, and the second light scattering structure can scatter a second portion of the light emitted from the corresponding optoelectronic light source, and the first portion and the second portion are different. Thus, the second layer can include a plurality of light scattering structures, and each light scattering structure can be designed individually and can scatter light in a different manner.

[0381] In some embodiments, at least one layer, and preferably all layers, of the optoelectronic device comprise or consist of at least partially transparent materials.

[0382] In some embodiments, each light scattering structure extends beyond the outer edge of the corresponding optoelectronic light source as viewed from above the second layer. Thus, the cross-sectional area of each light scattering structure in a plane parallel to the upper surface of the second layer can be larger than the cross-sectional area of the corresponding optoelectronic light source in another plane parallel to the upper surface of the second layer. However, the outer edge of each light scattering structure can correlate with or be disposed within the outer edge of the corresponding optoelectronic light source as viewed from above the second layer. Thus, the cross-sectional area of each light scattering structure in a plane parallel to the upper surface of the second layer can be less than or equal to the cross-sectional area of the corresponding optoelectronic light source in another plane parallel to the upper surface of the second layer.

[0383] When the cross-sectional area of each light scattering structure is larger than the cross-sectional area of the corresponding optoelectronic light source, the light emitted from the corresponding optoelectronic light source does not shine through the light scattering structure very much, or particularly not at all, and in particular, all the light does not shine through the light scattering structure. When the cross-sectional area of each light scattering structure is less than or equal to the cross-sectional area of the corresponding optoelectronic light source, the transparency of the second layer can be increased.

[0384] In some embodiments, each light scattering structure can have isotropic or anisotropic properties. This means, on the one hand, that each light scattering structure can scatter light equally in all spatial directions such that the light emitted from the light scattering structure has at least approximately equal luminance, independent of the viewing angle to the light scattering structure. Alternatively, each light scattering structure can scatter light differently in different spatial directions, for example, depending on the shape of the light scattering structure.

[0385] In some embodiments, the first layer is disposed between the cover layer and the carrier layer. In some embodiments, the second layer corresponds to the cover layer.

[0386] In some embodiments, the optoelectronic device further comprises a first auxiliary layer disposed between the cover layer and the first layer, and / or a second auxiliary layer disposed between the carrier layer and the first layer. The first and / or second auxiliary layer can be a leveling layer comprising or consisting of a material such as polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA). When the optoelectronic light source is disposed protruding from the upper surface of the first layer on the first layer, the first auxiliary layer can form a leveling layer such that the protruding portion of the optoelectronic light source is embedded in the first auxiliary layer.

[0387] By using individually designed light scattering structures, variations in the thickness of any of the layers of the optoelectronic device, and thus variations in the luminance and color of the light emitted from the optoelectronic device, can be compensated to obtain the desired uniformity of the optoelectronic device.

[0388] In some embodiments, a set of optoelectronic devices includes at least two optoelectronic devices according to any one of the above-described embodiments. At least some of the light scattering structures of one optoelectronic device are designed or arranged to be different from the light scattering structures of the other optoelectronic device. Thus, the two optoelectronic devices are different from each other because the individually designed light scattering structures are designed and / or arranged differently for both optoelectronic devices.

[0389] In some embodiments, a method of manufacturing an optoelectronic device includes providing a plurality of optoelectronic light sources disposed on a first layer. The method further includes generating a plurality of light scattering structures within a second layer above the plurality of optoelectronic light sources. Each light scattering structure is associated with an optoelectronic light source. The step of generating the light scattering structures includes individually generating the light scattering structures within the second layer according to the operating parameters of the corresponding optoelectronic light sources, particularly by using laser light.

[0390] In some embodiments, prior to the step of generating the plurality of light scattering structures, the method further includes determining a value of an operating parameter for each optoelectronic light source. The step of determining may further include, for example, switching on the optoelectronic device so that the plurality of optoelectronic light sources emit light. The step of determining may include taking a picture of the optoelectronic device, particularly a top view of the optoelectronic device, by using a camera. In a further step, the step of determining may include a measuring step based on the taken picture to determine a value of an operating parameter for each optoelectronic light source. In the next step, an optoelectronic light source having a value of an operating parameter that meets a predetermined criterion is identified.

[0391] In some embodiments, the method includes generating a corresponding light scattering structure for a photoelectronic light source that does not have a value of an operating parameter that meets a predetermined criterion. This light scattering structure is fabricated to scatter light from the corresponding photoelectronic light source such that the value of the operating parameter of the corresponding photoelectronic light source meets the predetermined criterion, particularly when the light emitted from the photoelectronic light source passes through the corresponding light scattering structure. However, in some embodiments, particularly when the light emitted from the photoelectronic light source passes through the corresponding light scattering structure, the value of the operating parameter need not meet the predetermined criterion and may be within a predetermined range of the predetermined criterion.

[0392] In some embodiments, between the step of determining the value of the operating parameter for each photoelectronic light source and the step of fabricating the light scattering structure, the method further includes calculating an individual design for each light scattering structure according to the determined value of the operating parameter of the corresponding photoelectronic light source.

[0393] In some embodiments, the operating parameter is luminance, and the predetermined criterion requires that a photoelectronic light source that meets the criterion is the dimmest photoelectronic light source among a plurality of photoelectronic light sources.

[0394] In some embodiments, the step of fabricating the light scattering structure includes fabricating a light scattering structure for each photoelectronic light source that is not the dimmest photoelectronic light source.

[0395] In some embodiments, each light scattering structure reduces the luminance of the corresponding photoelectronic light source to a level corresponding to or equal to the luminance of the dimmest photoelectronic light source.

[0396] In some embodiments, the step of fabricating the light scattering structure includes sequentially providing the light scattering structure from one to the next using a laser, or providing two or more light scattering structures in parallel using two or more lasers.

[0397] By using a laser beam, scattering centers can be provided by laser writing into a second layer that forms an optical scattering structure. The scattering centers can include or consist of, for example, defects in the material of the second layer.

[0398] In some embodiments, an optoelectronic device has a first layer (also referred to as the first layer segment), an intermediate or bottom layer of a layer stack, and a carrier layer and a cover layer (also referred to as the second and third layers). The first layer can be disposed between the carrier layer and the cover layer. The first layer can carry at least one electronic or optoelectronic element or optoelectronic light source, and / or at least one electronic or optoelectronic element or optoelectronic light source can be partially or completely embedded in the first layer.

[0399] In some embodiments, the first layer is at least partially transparent and can include or consist of, for example, materials such as high or low grade polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), (colorless) polyimide (PI), polyurethane (PU), poly(methyl methacrylate) (PMMA), polycyclic aromatic hydrocarbons (PAK), or other suitable materials. In particular, the first layer can include or consist of at least partially transparent plastics, in particular at least partially transparent foils, in particular flexible foils.

[0400] The carrier layer and the cover layer can each be made of a glass material, a plastic material, and / or other suitable materials. The carrier layer and the cover layer can each include a single layer or several layers made of the same or different materials.

[0401] In some embodiments, the optoelectronic device further comprises at least one auxiliary layer (also referred to as an adhesive layer), a planarization layer, the bottommost layer of the layer stack, the second or third layer, or a further layer. The first auxiliary layer can be disposed between the first layer and the cover layer, and optionally, the second auxiliary layer can be disposed between the first layer and the carrier layer.

[0402] At least one auxiliary layer is one of the following a molten material layer or an adhesive layer, in particular, a hot melt adhesive layer, for example, a resin such as ethylene vinyl acetate (EVA), polyvinyl butyral (PVB), or an ionomer-based system, and can be formed by one of them.

[0403] In some embodiments, at least one auxiliary layer can surround the first layer with the same layer. At least one auxiliary layer can have the same height as the first layer, but at least one auxiliary layer can also have a height different from that of the first layer, in particular, greater than the height of the first layer. At least one auxiliary layer can surround the first layer not only circumferentially, because the first layer can be completely embedded in at least one auxiliary layer.

[0404] In some embodiments, at least one auxiliary layer can be at least partially transparent. In some embodiments, at least one auxiliary layer can be made black, resulting in an at least partially transparent auxiliary layer. If the optoelectronic device has two or more auxiliary layers, none of the auxiliary layers can be made black, one of the auxiliary layers can be made black, a selection of the auxiliary layers can be made black, or all of the auxiliary layers can be made black.

[0405] In some embodiments, at least one electronic or optoelectronic element, or optoelectronic light source, in particular an LED, can be less than 300 μm, in particular less than 150 μm. Due to such a spatial spread, at least one electronic or optoelectronic element or optoelectronic light source is hardly visible to the human eye.

[0406] In some embodiments, at least one electronic or optoelectronic element or optoelectronic light source is an LED. The LED can in particular be called a mini-LED. This mini-LED is, for example, a small LED with an edge length of less than 200 μm, in particular less than 40 μm, in particular in the range from 200 μm to 10 μm. Another range is from 150 μm to 40 μm.

[0407] Furthermore, the LED can in particular also be called a micro-LED (also referred to as μLED) or μLED chip when the edge length is in the range from 100 μm to 10 μm. In some embodiments, the LED can have spatial dimensions of 90×150 μm, or the LED can have spatial dimensions of 75×125 μm.

[0408] In some embodiments, the mini-LED or μLED chip can be an unpackaged semiconductor chip. Being unpackaged can mean that the chip does not have a housing around its semiconductor layer, such as, for example, an unpackaged semiconductor die. In some embodiments, being unpackaged can mean that the chip does not contain organic materials. Thus, an unpackaged device does not contain organic compounds containing covalently bonded carbon.

[0409] In some embodiments, each optoelectronic device or optoelectronic light source can have a mini-LED or μ-LED chip configured to emit light of a selected color. In some embodiments, each optoelectronic device or optoelectronic light source can have one or more mini-LEDs or μ-LEDs, for example, an RGB pixel (RGB-Pixel) having three mini-LED or μ-LED chips. The RGB pixel can emit light of, for example, red, green, and blue, as well as any mixed colors.

[0410] In some embodiments, the RGB pixel can further have one or more integrated circuits (ICs), particularly a miniaturized integrated circuit as a micro-integrated circuit (μIC) for example.

[0411] In some embodiments, the optoelectronic device has at least one conductor line (also referred to as a conductor path, a conductor layer segment, or part of an electrical conductor arrangement), and preferably two conductor lines, particularly for supplying electrical energy and / or data signals to at least one electronic or optoelectronic device or optoelectronic light source.

[0412] In some embodiments, the first layer carries at least one conductor line. However, in some embodiments, at least one auxiliary layer can carry at least one conductor line.

[0413] In some embodiments, at least one conductor line can be made of a conductive material such as copper for example. At least one conductor line can be coated and / or blackened to reduce the reflectivity of the outer surface region of at least one conductor line. The coating can be, for example, a palladium or molybdenum coating. In some embodiments, at least one conductor line can have a width in the range of 5 μm to 50 μm.

[0414] In some embodiments, at least one conductor line can be formed as a conductive mesh, in particular a metal mesh. The mesh can be coated and / or blackened, in particular to reduce the reflectivity of the outer surface region of the conductive mesh. The coating can be, for example, a palladium or molybdenum coating.

[0415] In some embodiments, the optoelectronic device has a layer stack including a first layer as well as a cover layer and a carrier layer. The first layer is in particular an intermediate layer arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer, and at least one layer of the layer stack, and preferably all layers of the layer stack, are at least partially transparent. The layer stack has at least one conductive layer, which is arranged between two adjacent layers of the layer stack or embedded in a layer.

[0416] In some embodiments, at least one conductive layer has at least one conductive line electrically connected to a contact pad of the optoelectronic light source. At least one conductive layer can be made of a material with good electrical transmission properties and good thermal conductivity, such as copper, silver, gold, and aluminum. At least one conductive layer, and in particular at least one conductive line, can be coated and / or blackened to reduce the reflectivity of the outer surface region of at least one conductive line. The coating can be, for example, a palladium or molybdenum coating. In some embodiments, at least one electrical line can have a width in the range of 5 μm to 50 μm.

[0417] At least one conductive layer can have a conductive mesh, for example, a metal mesh, in particular, a copper mesh. The mesh can have knots and interconnecting portions between the knots, and preferably, at least most of the interconnecting portions are unbroken. Thus, at least one conductive layer can be structured to have a plurality of conductive lines connected to each other.

[0418] The mesh can have a regular or irregular pattern, and the irregular pattern can be preferred because the irregular pattern can increase the transparency of the conductive layer. This reason can be that the irregular pattern may become more difficult to perceive by the human eye.

[0419] In some embodiments, the conductive mesh is coated and / or blackened, particularly to reduce the reflectivity of the outer surface region of the conductive mesh. The coating can be, for example, a palladium or molybdenum coating.

[0420] At least some embodiments of the optoelectronic devices described herein can be disposed on a non-flat surface or a curved surface, for example, on the outside or inside of a vehicle or a building. This is possible because at least some embodiments of the optoelectronic devices described herein can be constructed based on a flexible layer structure.

[0421] Accordingly, the present invention also relates to a vehicle or a building, etc., having at least one optoelectronic device on a larger entity, for example, on its outside or inside, particularly on the outer or inner surface.

[0422] The description using the exemplary embodiments does not limit the present invention. Rather, the present invention includes any new feature and any combination of features, particularly any combination of the features described in the claims, even if such feature or combination thereof is not explicitly described in the claims or in the exemplary embodiments, provided that the combination is within the scope of the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0423] Hereinafter, the present invention will be described by way of examples only and with reference to exemplary embodiments together with the accompanying drawings.

[0424]

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Mode for Carrying Out the Invention

[0425] The exemplary optoelectronic device shown in FIG. 1 can be the pane 1. The at least partially transparent pane 1 is part of the side door of the vehicle V. Inside the pane 1, a two-dimensional indicator region 17 is provided. This indicator region 17 shows, for example, a symbol indicating the state of charge of the vehicle's battery. Here, the indicator region 17 is at the lower left of the pane 1. The indicator region 17 can further show symbols, colors, and / or animations. Additionally or alternatively, the emission class, vehicle number, further technical data, or advertisements are shown on the pane 1.

[0426] The pane 1 can have the cross-sectional structure shown in FIG. 2. The pane 1 can include a carrier layer 7, an intermediate layer 3, and a cover layer 5. An adhesive layer 12 is used to attach the cover layer 5, the intermediate layer 3, and the carrier layer 7 to each other. Thus, the carrier layer 7, the intermediate layer 3, and the cover layer 5 can be adhesively bonded together.

[0427] Alternatively, the intermediate layer 3 can be a foil that is laminated onto the cover layer 5 and the carrier layer 7 without applying an additional adhesive layer 12. The cover layer 5 and the carrier layer 7 can be, for example, glass layers. Thereby, each layer can consist of one or more glass layers and can correspond, for example, to a layer of safety glass.

[0428] The intermediate layer 3 can be flexible and can conform to the non-planar shape of the glass layers 5, 7. The foil can include a plastic, such as PET (polyethylene terephthalate). The adhesive can be PVB (polyvinyl butyral). The glass can be replaced with PMMA (polymethyl methacrylate) and / or PC (polycarbonate).

[0429] The intermediate layer 3 carries optoelectronic components such as an optoelectronic light source 9 (not shown in FIG. 2). Furthermore, the intermediate layer 3 can function as an optical element because the intermediate layer 3 can function as a guide for light emitted from the light source 9 and can further provide a function for diffusing and / or extracting light from the intermediate layer 3.

[0430] As shown in FIG. 3, the intermediate layer 3 can be a foil, but can function as a carrier for optoelectronic components (such as the light source 9, etc.). The light source 9 can be, for example, an LED. The light source 9 can be a flip chip having both electrical contacts on the bottom surface. As shown in FIG. 3, the light source 9a is upside down, and the electrical contacts of the light source 9a can be connected to the conductor path 11 using bond wires. The conductor path 11 is used to supply electricity to the light sources 9a, 9b. The conductor path 11 can be disposed on the intermediate layer 3. As further shown in FIG. 3, the electrical contacts on the bottom side of the flip chip 9b can be disposed directly on the contacts of the conductor path 11.

[0431] The light source 9 can be, for example, a volume emitter or a surface emitter. The volume emitter can emit light on its upper surface. The upper surface of the volume emitter is on the opposite side of the bottom side and on the side surface of the volume emitter. The surface emitter can emit light on its upper surface. The light source 9a can be, for example, a surface emitter that emits light on the surface in contact with the surface of the intermediate layer 3. Therefore, the emitted light can be directly emitted into the intermediate layer 3. The light source 9b can be a surface emitter that emits light on the upper surface facing away from the intermediate layer, or can be a volume emitter. The light source 9b cannot be used to input light into the intermediate layer 3.

[0432] The light source 9 can have a size in the range of 50 μm × 50 μm × 4 μm and can be provided as a chip without a package. The double arrow in FIG. 3 indicates the spatial spread of the electrically and mechanically connected chips in the range of less than 200 μm, particularly less than 150 μm. The spacing between adjacent chips can be within the same range or larger. Therefore, the switched-off chips are invisible or hardly visible.

[0433] Figure 4 is a cross-sectional view of an optoelectronic device, in particular, a pain (see pain 1 in Figure 1). Here, the light source 9 is, for example, a chip without a package and is at least partially incorporated into the intermediate layer 3. The intermediate layer 3 can be an elastic foil.

[0434] For example, the light source 9 is pushed into the intermediate layer 3. An electrical conductor path 11 is arranged on one surface of the intermediate layer 3. Also, the intermediate layer 3 can function as an adhesive, and thus, a separate adhesive layer is not required.

[0435] Based on the setting that the refractive index of the intermediate layer 3 in Figure 3 is larger than that of the cover layer and the carrier layer materials adjacent to the intermediate layer 3, the intermediate layer 3 can provide an optical guiding function. The electrical conductor path 11 is made of, for example, a metal such as silver or gold, or a transparent conductive material such as ITO.

[0436] The three light sources 9 on the right side of Figure 4 have reflection structures 15, 15a, 15b, 15c on one main surface or both main surfaces of each light source 9. The main surfaces are the top surface and the bottom surface. When the light source 9 is a flip chip as shown in Figure 4, both electrical contacts are on the bottom surface. In the view of Figure 4, the top surface of the light source 9 faces downward, and the electrical contacts of the flip chip are attached to the respective conductive paths 11.

[0437] The reflection structure 15 on the top surface and / or bottom surface of the chip can be a mirror 15a, a metal coating 15b, and / or a dielectric coating 15c. The metal coating 15b can include or consist of aluminum and / or silver and / or gold. Also, other metals are possible. The dielectric coating 15c can be a distributed Bragg reflector. The reflection structures 15 can be combined. Thus, different reflection structures can be provided on the same chip. Due to the reflection structure, the chip can function as a side emitter that effectively emits light through the sidewalls without the reflection structure. Therefore, the light emitted from the light source 9 is efficiently distributed within the intermediate layer 3.

[0438] Next, referring to FIG. 5, the optoelectronic light source 9 provided as an LED chip is again pushed into the intermediate layer 3. This intermediate layer 3 is a foil and can have a conductor path 11 on its upper surface. According to the example of FIG. 5, the conductor path 11 can reach into the foil so as to contact the electrical contacts of the light source 9 that face away from the upper surface of the intermediate layer 3.

[0439] The intermediate layer 3 can include a conversion material 21. For example, the light source can be configured to emit UV light or blue light that can be converted to light of a longer wavelength (e.g., red light) by the use of the conversion material 21. The conversion material 21 can be arranged at a preset distance with respect to the light source 9, and the intermediate layer 3 can function as a light guide that guides the light from the light source 9 to the conversion material 21. At least a part of the converted light can exit the device in a direction perpendicular to the surface of the intermediate layer 3 at the position of the conversion material 21. Thus, the light can be seen externally.

[0440] In the example shown in FIG. 6, the intermediate layer 3 is adapted to enable uniform surface emission. The intermediate layer 3 is, for example, a foil. The electrical contacts and the conductor path 11 are formed on one main surface of the foil. The light source 9 is pushed into the foil and is, for example, an LED chip.

[0441] The LED chip can emit light into the foil at least partially from the side surface. A scattering structure or a diffusing structure 13 is formed in the foil. For example, the diffusing structure or the scattering structure 13 can be diffusion centers 13a. These can diffuse the emitted light L within the foil and along the foil for a certain distance D. Within the distance D, the light L can exit the foil at one main surface or two main surfaces of the foil, that is, at the upper surface and / or the bottom surface of the foil 3 as shown in FIG. 6. The viewing angle α can be between 0° and 90° with respect to the direction perpendicular to the foil.

[0442] The diffusion center 13a can be stamped into the foil and / or can be arranged in the foil. The diffusion center 13a can be provided as transparent particles 13b, white particles 13c, holes, bubbles, and / or as a change in the density of the foil material in the foil. In addition, the scattering structure 13 can also be formed on the surface of the foil 3 or on the surface of the foil 3.

[0443] The scattering density of the diffusion center 13 can be implemented such that the length of the mean free path is greater than the thickness of the foil 3. The size of the diffusion center 13a can be smaller than the wavelength of the emitted light. Therefore, the diffusion center can scatter in all directions. For example, the scattering or dispersing material can be titanium dioxide and / or zirconium.

[0444] To support the light guiding function, the refractive index of the foil 3 is greater than that of the surrounding material, for example, corresponding to the materials of the cover layer and the carrier layer.

[0445] The optoelectronic device having the intermediate layer 3 shown in FIG. 6 can provide a two-dimensional light emitting region that is, for example, 5 to 1000 times or more larger than the size of the small optoelectronic light source 9. Uniform light extraction can be provided. Since the connected chips are preferably smaller than 150 μm, they are not visible.

[0446] In the example shown in FIG. 7, the pane 1 has a cover layer 5, an intermediate layer 3, and a carrier layer 7. The refractive index ni of the intermediate layer 3 is greater than the refractive index nj of the adjacent glass. Therefore, the intermediate layer 3 can function as an optical guide for the light provided by the optoelectronic light source 9. The emitted light diffuses, for example, into and along the intermediate layer 3 up to the end face of the intermediate layer 3.

[0447] The optoelectronic light source 9 can be configured with a reflective structure so as to guide the emitted light L into and along the intermediate layer 3. The reflective structures 15, 15b, 15c can be formed on both main surfaces of the intermediate layer 3. Further, the reflective structures 15, 15a can be formed on the outer surface of the cover layer 5 and the outer surface of the carrier layer 7. The reflective structure can be, for example, a metal coating 15b or a dielectric coating 15c. The dielectric coating 15c can form a distributed Bragg reflector.

[0448] The example of FIG. 8 has three cover layers 5 and three intermediate layers 3, which are stacked on one carrier layer 7. Inside each intermediate layer 3, at least one optoelectronic light source 9, such as an LED or a μLED, is incorporated. Reflective structures 15 are formed on the upper and lower surfaces of the light source 9.

[0449] Therefore, the light source 9 functions as a side emitter that emits light substantially in a direction parallel to the upper and lower surfaces of the intermediate layer 3. Therefore, the light is distributed within the intermediate layer 3.

[0450] Each intermediate layer 3 further has at least one scattering structure 13 that covers the volume within the intermediate layer 3. The scattering structure 13 can be formed, for example, by diffusion centers 13a, transparent particles 13b, or white particles 13c.

[0451] The light sources 9 in different intermediate layers 3 emit light of different colors. For example, the light source 9 in one of the intermediate layers 3 emits red light. The light source 9 in another intermediate layer 3 emits green light, and the light source in the third intermediate layer 3 emits blue light.

[0452] At the positions of each scattering or dispersion structure 13, the light L can exit the intermediate layer 3, in particular, in the vertical direction and / or at a viewing angle α of less than, for example, 45° with respect to the vertical direction, towards the side surface of the cover layer 5 and towards the carrier layer 7. For example, exiting from the outer surface of the carrier layer 7 can be blocked by applying a light absorption layer on the outer surface. Thus, the light exits substantially only from the outer surface of the top cover layer 5 of pane 1 in FIG. 3.

[0453] The positions of the scattering or dispersion structures 13 are at preset distances D1, D2, D3 from the corresponding light sources 9. The scattering or dispersion structures 13 are shifted relative to each other such that the light scattered from each structure 13 exits pane 1 at slightly different positions. The structures 13 do not interfere with each other regarding the extraction of light from the intermediate layer. Thus, a certain offset O is provided between the structures 13.

[0454] By using the structures 13, two-dimensional surface light emission can be obtained. Thus, for example, symbols or indicators can be visualized on the upper surface of pane 1. Different colors of light can be provided for each light source 9 in different intermediate layers 3, so different colors of symbols or indicators can also be generated.

[0455] In some embodiments, pane 1 can be part of a vehicle window. Alternatively, pane 1 can be a cover of a vehicle lamp, a cover of a vehicle light, or mirror glass. Also, pane 1 can be at least part of a headlight, a rear light, or an interior light. Pane 1 can be a vehicle body lighting unit by covering at least part of the vehicle body.

[0456] As shown in the flowchart of FIG. 9, in step S1 of the method for manufacturing an optoelectronic device, at least one, preferably a plurality of, optoelectronic light sources are arranged on at least one surface of the intermediate layer and / or at least partially embedded in the intermediate layer. In step S2, the intermediate layer is arranged between the cover layer and the carrier layer.

[0457] Next, referring to FIGS. 10A and 10B, two optoelectronic devices are shown. The inventors have found that, in particular, in order to manufacture a transparent LED substrate that is disposed (between two glass panes) in glass or attached behind a glass pane, it is technically difficult to balance the LED substrates with their respective topographies. Such an LED substrate can be seen, for example, in FIG. 10A.

[0458] The inventors have further found that when electrically interconnecting the LEDs on such an LED substrate, especially with the aid of the PICOS process described above, as low a topography as possible is required to provide a contact path that overmolds the topography of the LEDs. As shown in FIG. 10A, current LEDs, especially flip-chip LEDs, require a technically complex "ramp" or fillet to lead such a contact path to the contact pads of the LEDs.

[0459] To counter such a situation, efforts have been made to embed the LEDs in the substrate as shown in FIG. 10B. Such efforts include, for example, a spacer foil having defined holes adapted to the LED layout, a compensation foil ("perforated mask") that embeds the LEDs and thus levels the surface, or a spayed material for surface leveling.

[0460] As shown in FIG. 10B, such an approach has resulted in a gap between the LED and the substrate. This gap makes it difficult to electrically interconnect the LEDs on such an LED substrate, especially with the aid of the PICOS process, because the contact path to the contact pads of the LEDs needs to fill the gap.

[0461] Accordingly, an object of the present invention is to provide an improved optoelectronic device having a first layer, in particular a thermoplastic substrate, in which at least one electronic or optoelectronic component is partially or completely embedded in the first layer, on the one hand providing the lowest possible topography of the optoelectronic device, and on the other hand preventing or at least minimizing the occurrence of a gap between the first layer and the at least one electronic or optoelectronic component.

[0462] The optoelectronic device 1 in FIGS. 11C and 12C has a first layer 3, two electronic or optoelectronic components 9 (in particular, two μLEDs) that are completely (see FIG. 11C) or at least partially embedded in the first layer 3 (see FIG. 12C), and a structured conductor layer 11. The first part 11.1 of the conductor layer 11 is disposed on the upper surface 3.1 of the first layer 3, and the second part 11.2 of the conductor layer 11 is disposed on the upper surface 9.1 of the electronic or optoelectronic component 9 and is in contact with the electrical contact 18 of the electronic or optoelectronic component 9. The electrical contact 18 (in particular, a contact pad) is disposed on the upper surface 9.1 of the electronic or optoelectronic component 9. The boundary region 19 is located between the upper surface 9.1 of the electronic or optoelectronic component 9 and the adjacent upper surface 3.1 of the first layer 3, and the intermediate part 11.3 of the conductor layer 11 extends across the boundary region 19 and interconnects the first part 11.1 of the conductor layer 11 and the second part 11.2 of the conductor layer 11.

[0463] According to FIG. 11C, the electronic or optoelectronic component 9 is completely embedded in the first layer 3 such that the upper surface 9.1 of the electronic or optoelectronic component 9 is disposed in a plane 20 that extends over the upper surface 3.1 of the first layer 3.

[0464] The electronic or optoelectronic component 9 according to FIG. 12C is partially embedded in the first layer 3 such that the upper surface 9.1 of the electronic or optoelectronic component 9 protrudes from the upper surface 3.1 of the first layer 3 by a height H. Preferably, the height H is at most one third of the thickness t of the electronic or optoelectronic component 9, and in particular, the height H is less than 20 μm.

[0465] The first layer 3 each has two recesses. The side surface 3.2 of the first layer 3 facing the shell surface 9.2 of the electronic or optoelectronic component 9 is formed by the side surfaces of the recesses of the first layer 3. The electronic or optoelectronic component 9 is disposed in the recess of the first layer 3. Thus, the boundary region 19, respectively, the gap 21 shown in FIG. 12C is formed by the distance between the electronic or optoelectronic component 9 disposed in the recess of the first layer 3 and the side surface 3.2 of the first layer 3.

[0466] According to FIG. 12C, the gap 21 is filled with a filler 22, in particular an adhesive. The filler 22 forms a fillet weld between the upper surface 3.1 of the first layer 3 and the shell surface 9.2 of the electronic or optoelectronic component 9. Furthermore, the filler 22 in the form of a fillet weld is partially disposed within the gap 21 and forms a partial fillet weld above the gap 21 and between the upper surface 3.1 of the first layer 3 and the shell surface 9.2 of the electronic or optoelectronic component 9.

[0467] Compared with FIGS. 10A and 10B, the topography of the optoelectronic device is reduced by embedding the electronic or optoelectronic component 9 in the first layer 3, and thus the subsequent processing of the optoelectronic device is simplified. Furthermore, the boundary regions, in particular the gaps, are preferably small, for example, to enable interconnecting the electronic or optoelectronic components 9 using, for example, the PICOS process, because the distance / size of the gaps filled by the conductor layer can be limited for such a process.

[0468] According to FIG. 11C, the filler 22 is disposed between the first layer 3 and the bottom surface 9.3 of the electronic or optoelectronic component 9. The bottom surface 9.3 of the electronic or optoelectronic component 9 is on the side opposite to the upper surface 9.1 of the electronic or optoelectronic component 9.

[0469] FIGS. 11A and 11B show the process of manufacturing the optoelectronic device 1 according to FIG. 11C, and FIGS. 12A and 12B show the process of manufacturing the optoelectronic device 1 according to FIG. 12C.

[0470] In the first step, two electronic or optoelectronic components 9 are placed on the upper surface 3.1 of the first layer 3 and bonded to the upper surface 3.1 of the first layer 3 using an adhesive 22. According to FIG. 11A, the adhesive 22 is disposed between the electronic or optoelectronic component 9 and the first layer, and according to FIG. 12A, the adhesive 22 is disposed between the electronic or optoelectronic component 9 and the first layer, and a fillet weld is formed between the upper surface 3.1 of the first layer 3 and the shell surface 9.2 of the electronic or optoelectronic component 9.

[0471] Next, two electronic or optoelectronic components 9 are embedded in the first layer 3. According to FIG. 11B, the electronic or optoelectronic component 9 is completely embedded in the first layer 3, or according to FIG. 12B, is partially embedded in the first layer 3.

[0472] The embedding step can be carried out, for example, by locally heating the first layer 3 and pushing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3, heating the electronic or optoelectronic component 9 and pushing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3, or by deep drawing at least a part of the first layer 3 to generate a recess 21 and pushing the electronic or optoelectronic component 9 into the recess 21.

[0473] Also, the step of at least partially or completely embedding at least one electronic or optoelectronic component 9 in the first layer 3 can be carried out by heating the first layer 3 to a temperature just below the softening temperature of the material of the first layer 3 and heating the electronic or optoelectronic component 9, and in particular simultaneously, pushing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3.

[0474] In a further step, as shown in FIGS. 11C and 12C, a structured conductor layer 11 is arranged. The first part 11.1 of this conductor layer 11 is arranged on the upper surface 3.1 of the first layer 3, the second part 11.2 of this conductor layer 11 is arranged on the upper surface 9.1 of the electronic or optoelectronic component 9, the intermediate part 11.3 of this conductor layer 11 extends beyond the boundary region 19, and interconnects the first part 11.1 of this conductor layer 11 and the second part 11.2 of this conductor layer 11.

[0475] Figures 13A to 13C show the steps of another exemplary embodiment of a method of manufacturing an optoelectronic device according to the present invention. In contrast to Figures 11A to 11C, the electronic or optoelectronic component 9 is adhered to the first surface 3.1 using an adhesive 22. For example, when performing the step of embedding the electronic or optoelectronic component 9 into the first layer 3 by locally heating the first layer 3 and pressing the electronic or optoelectronic component 9 into the upper surface 3.1 of the first layer 3, or by heating the electronic or optoelectronic component 9 and embedding the electronic or optoelectronic component 9 into the first layer 3, the adhesive 22 evaporates at least partially or completely. Thus, the optoelectronic device 1 in Figure 13C has no adhesive disposed between the electronic or optoelectronic component 9 and the first layer 3. However, residues of the adhesive may remain between the electronic or optoelectronic component 9 and the first layer 3.

[0476] According to Figures 14A to 14C, another exemplary embodiment of a method of manufacturing an optoelectronic device according to the present invention uses a heated stamp 30 to pick up an electronic or optoelectronic component 9, heat the component, place the component at each position on the upper surface 3.1 of the first layer 3, and press the component into the first layer 3 at each of these positions. Further, the first layer 3 can be heated to a temperature just below the softening temperature of the material of the first layer 3. Thus, an adhesive is not required to fix the electronic or optoelectronic component 9 to the first surface 3.1 because the heated stamp 30 holds the electronic or optoelectronic component 9 in place while pressing the electronic or optoelectronic component 9 into the first layer 3.

[0477] Figures 15A and 15B show the steps of another exemplary embodiment of a method of manufacturing the optoelectronic device 1 according to the present invention. In addition to the above embodiments, the optoelectronic device 1 has a second layer 26, particularly a first thermal release film or laminate, disposed on the surface of the first layer 3 opposite to the upper surface 3.1. The optoelectronic device 1 further has a carrier layer 7, particularly a PET carrier layer, disposed on the second layer 26 on the side opposite to the first layer 3, and A third layer 27, in particular a second thermal release film or a photoresist layer, disposed on the carrier layer 7 on the side opposite to the second layer 26, and a temporary carrier layer 28 disposed on the third layer 27 on the side opposite to the carrier layer 7.

[0478] The electronic or optoelectronic component 9 can be embedded in the first layer with the aid of any one of the above-described processes. As shown in FIG. 15B, a multilayer 110 of three structured conductor layers 11a, 11b, 11c is disposed on the first surface 3.1, the upper surface 9.1, and the electrical contact 18. The three structured conductor layers 11a, 11b, 11c are arranged overlapping each other, and the adjacent conductor layers 11a, 11b, 11c are separated from each other by separation layers 24a, 24b. Each conductor layer includes one or more conductive vias filled with a dielectric material 25. More specifically, each conductor layer includes a conductor path connecting different conductor layers, and the contact portion of the conductor layer has a sink filled with a dielectric material 25. The dielectric material can be disposed on the conductor layer in the form of a planarization layer and can be particularly light-structurable.

[0479] FIG. 15B further shows a gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3 facing the shell surface 9.2. The gap is filled with a filling material 22, in particular a planarization layer, to provide a flat surface of the filling material 22 in a plane 20 extending onto the upper surface 3.1 of the first layer 3.

[0480] An electronic chip 29 (for example, an integrated circuit (IC), etc.) is disposed on the multilayer 110 of the three structured conductor layers 11a, 11b, 11c and is electrically coupled to at least one of the structured conductor layers 11a, 11b, 11c.

[0481] Figures 16A to 16D show cross-sectional views and top views of intermediate products generated during the execution of an exemplary embodiment of a method for manufacturing an optoelectronic device according to the present invention. The intermediate product includes a first layer 3 and at least one of various electronic and optoelectronic components 9 embedded in the first layer 3.

[0482] According to Figure 16A, a sapphire flip-chip LED 9 is completely embedded in the first layer 3. Figure 16B shows a thin-film flip-chip LED 9 containing silicon, and this thin-film flip-chip LED 9 is completely embedded in the first layer 3 with the light-emitting surface of the LED facing the first layer 3. The electrical contacts 18 of the sapphire flip-chip LED 9 and / or the thin-film flip-chip LED 9 can be made of a metal, such as gold for example.

[0483] Figure 16C shows an electronic chip 9, such as an integrated circuit (IC) for example, embedded in the first layer 3, and this electronic chip can have one or more sensors, such as an optical sensor, a thermal sensor, or a mechanical sensor for example. The electrical contacts 18 can be made of a metal, such as aluminum for example.

[0484] In yet another embodiment, the electronic or optoelectronic component 9 has at least one sub-assembly of, for example, an LED, a μLED, a flip-chip LED, a thin-film flip-chip LED, an IC chip, an optical sensor, a thermal sensor, and a mechanical sensor, as shown in Figure 16D. The above components can be arranged on a substrate 31 and covered with a sealing material 32. The electrical contacts 18 of the sub-assembly 9 can be made of a metal, such as gold for example.

[0485] Figures 17A to 17C show cross-sectional views of an exemplary embodiment of an optoelectronic device according to the present invention. The structured conductor layer 11 is arranged on the first surface 3.1, the upper surface 9.1, and the electrical contacts 18 by means of a so-called PICOS (Planar Interconnect On Substrate) process, as shown in Figure 17A. This PICOS process can have the following steps. In a first step, a seed layer, in particular a titanium copper alloy, is applied to the upper surface 9.1 of at least one electronic or optoelectronic component 9, the electrical contact 18, the upper surface 3.1 of the first layer 3, and the boundary region 19. A photoresist layer is applied to the seed layer and structured such that regions of the seed layer are exposed. The exposed regions of the seed layer are subjected to a galvanic plating process, and copper titanium is electrodeposited on the exposed regions of the seed layer. The regions of the photoresist layer and the underlying seed layer left by the structuring are removed.

[0486] The step of subjecting the seed layer to a galvanic plating process and the step of subsequently applying the structured photoresist layer can be interchanged. Thus, a galvanic plating process can be carried out on a larger surface and subsequently structuring can be carried out.

[0487] Using this procedure, the electronic or optoelectronic component 9 can be "framed" by the structured conductor layer 11. Thus, using the PICOS process, both the mechanical stability and the electrical interconnection of at least one electronic or optoelectronic component 9 can be provided.

[0488] The structured conductor layer 11 can be arranged on the first surface 3.1, the upper surface 9.1, and the electrical contact 18 by means of a spraying process, as shown in FIG. 17A. Thus, silver nanotube ink or copper nanotube ink can be applied sequentially or in parallel and locally to the upper surface 9.1 of at least one electronic or optoelectronic component 9, the electrical contact 18, the upper surface 3.1 of the first layer 3, and the boundary region 19 to electrically interconnect at least one electronic or optoelectronic component 9.

[0489] According to FIG. 17C, in addition to the above embodiments, the optoelectronic device 1 has a dielectric layer 25 between the structured conductor layer 11 and the first layer 3, and between the structured conductor layer 11 and the upper surface 9.1 of the electronic or optoelectronic component 9. Such a dielectric layer 25 can be advantageous because it can prevent a short circuit between the structured conductor layer 11 and the first layer 3 and / or between the structured conductor layer 11 and the upper surface 9.1 of the electronic or optoelectronic component 9.

[0490] FIGS. 18A to 19C show cross-sectional views of exemplary embodiments of intermediate products of the optoelectronic device according to the present invention. Similar to the case of FIGS. 16A to 16D, the intermediate product has a first layer 3 and an electronic or optoelectronic component 9 embedded in the first layer 3. However, the step of disposing the structured conductor layer 11 on the first surface 3.1, the upper surface 9.1, and the electrical contact 18 is still pending.

[0491] FIGS. 18A to 18C show three cross-sectional views in which the size of the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3 facing the shell surface 9.2 is different and decreases from FIG. 18A to FIG. 18C. The shell surface 9.2 is preferably formed by the outer surface of the electronic or optoelectronic component 9 excluding the upper surface 9.1 and the bottom surface 9.3 of the electronic or optoelectronic component 9 facing the upper surface 9.1.

[0492] According to FIGS. 18A and 18B, the gap has a conical cross-section. In particular, the distance between the shell surface 9.2 and the side surface 3.2 is larger in the plane 20 extending on the upper surface 3.1 of the first layer 3 than in the plane extending on the bottom surface 3.1 of the electronic or optoelectronic component 9. The gap 21 preferably extends circumferentially around the electronic or optoelectronic component 9 surrounding the shell surface 9.2.

[0493] The gap 21 preferably has a width of less than 10 to 15 μm. In particular, the gap 21 has a width of less than 10 to 15 μm in the plane 20 extending on the upper surface 3.1 of the first layer 3.

[0494] As shown in FIGS. 19A to 19C, the gap 21 is filled with a filler 22, in particular an adhesive, and the amount of filler arranged in the gap 21 changes from FIG. 19A to FIG. 19C.

[0495] According to FIG. 19A, the filler 22 is not arranged at all or hardly in the gap 21. However, in FIG. 19B, the filler is arranged between the bottom surface of the electronic or optoelectronic component 9 and the first layer 3, while between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer, the filler 22 is not arranged at all or hardly in the gap 21.

[0496] As shown in FIG. 19C, the filler is arranged between the bottom surface of the electronic or optoelectronic component 9 and the first layer 3, and between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3. Furthermore, the deposit of the filler 22 is arranged on a plane 20 that spreads above the gap 21, in particular on the upper surface 3.1 of the first layer 3.

[0497] FIGS. 20A to 20D show scanning electron microscope (SEM) images of an exemplary embodiment of an optoelectronic device according to the present invention. The gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 3.2 of the first layer 3 facing the shell surface 9.2 has different sizes and becomes smaller from FIG. 20A to FIG. 20C. As can be seen from these figures, the gap 21 has a conical cross-section in which the distance between the shell surface 9.2 and the side surface 3.2 measured in a plane spreading on the upper surface 3.1 of the first layer 3 is larger than the distance in a plane spreading on the bottom surface of the electronic or optoelectronic component 9.

[0498] FIG. 20A shows a gap 21 in which the distance between the shell surface 9.2 and the side surface 3.2 measured in a plane spreading on the upper surface 3.1 of the first layer is too large, and with the help of the PICOS process, the structured conductor layer cannot be arranged on the upper surface 3.1 of the first layer 3, the upper surface 9.1 of the electronic or optoelectronic component 9, and the electrical contact 18 of the electronic or optoelectronic component 9.

[0499] The detailed views of each gap 21 shown in FIGS. 20B and 20E show a gap 21 having a width of 10 to 15 μm, in particular a width of 12.77 μm. Therefore, the PICOS process of arranging the structured conductor layer on the upper surface 3.1 of the first layer 3, the upper surface 9.1 of the electronic or optoelectronic component 9, and the electrical contact 18 of the electronic or optoelectronic component 9 is possible.

[0500] FIG. 20D shows a scanning electron microscope (SEM) image of the flip-chip LED 9 embedded in the first layer 3, and the gap 21 between the shell surface of the flip-chip LED 9 and the side surface of the first layer 3 facing this shell surface has a difference in size.

[0501] Next, referring to FIG. 21A, a cross-sectional view of an intermediate product of an exemplary embodiment of the optoelectronic device 1 is shown. The optoelectronic device 1 has a carrier layer 7 and at least two layer segments 3.1, 3.2 arranged adjacent to each other on the carrier layer 7 at a predetermined distance d. On each of the layer segments 3.1, 3.2, three optoelectronic components 9, in particular LEDs capable of emitting light of a selected color (in particular any one of red, green, or blue), are arranged and connected by conductor layer segments 11. Therefore, the three LEDs can form an RGB pixel. The predetermined distance d can be in the range of 0 to 1500 μm and can depend on the flow behavior of the materials of the adjacent layer segments 3.1, 3.2.

[0502] The layer segments 3.1, 3.2 include or consist of materials such as, for example, polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA). In particular, the layer segment can be a foil of a material such as, for example, polyvinyl butyral (PVB) or ethylene-vinyl acetate (EVA). Alternatively, the layer segments 3.1, 3.2 can include or consist of other plastics, in particular other resins having preferably strong bonding properties, optical transparency, adhesiveness to many surfaces, toughness, and flexibility.

[0503] In the next step, as shown in FIG. 21B, the two layer segments 3.1, 3.2 are mechanically connected by at least partially melting the opposing edge regions 3.1.1, 3.2.1 (see FIG. 21A) of the adjacent layer segments 3.1, 3.2, in particular using a laser or a heating device (e.g., an autoclave or a hot plate, etc.). Alternatively, the adjacent layer segments can be uniformly melted and mechanically connected to each other. This is preferably done by using a heating device (e.g., an autoclave or a hot plate, etc.).

[0504] After the step of mechanically connecting the adjacent layer segments 3.1, 3.2, a substantially uniform and flat layer 3 is formed.

[0505] As shown in FIG. 21C, the flattening layer 33 is disposed on the layer segments 3.1, 3.2. The flattening layer 33 can comprise or consist of the same material as the layer segments 3.1, 3.2. In particular, the flattening layer 33 can be a foil of a material such as polyvinyl butyral (PVB) or ethylene vinyl acetate (EVA), etc. The optoelectronic component 9 can be embedded in the flattening layer 33.

[0506] Next, referring to FIG. 22, the optoelectronic device 1 has a carrier layer 7 and a plurality of layer segments 3.1, 3.2,... arranged adjacent to each other on the carrier layer 7 at a predetermined distance d. Here, the number of layer segments is nine. The layer segments can be arranged on the carrier layer 7 in a regular matrix structure, and the predetermined distance d is the same for all the distances between the opposing edges of the adjacent layer segments. Thus, the layer segments are spaced apart by a predetermined distance d in each row of the matrix and also spaced apart by a predetermined distance d in each column of the matrix.

[0507] The optoelectronic device 1 further has a number of electrical bridge elements 34. These electrical bridge elements 34 extend between any two adjacent layer segments 3.1, 3.2 and electrically interconnect the conductor layer segments 11 disposed on the layer segments 3.1, 3.2. Here, the number of bridge elements 34 is 12.

[0508] In some embodiments, the electrical bridge element 34 has at least a partially transparent and / or flexible tape. This tape can have at least one conductor path for interconnecting the conductor layer segments 11 of two adjacent layer segments 3.1, 3.2. Such a transparent and / or flexible tape having at least one conductor path can be provided, for example, with the aid of an inkjet process.

[0509] In some embodiments, the electrical bridge element 34 is provided on a cover layer (not shown). The electrical bridge element can have the form of a conductor path. The cover layer is disposed on the layer segments 3.1, 3.2,... after the layer segments 3.1, 3.2,... are disposed on the carrier layer 7. Thereafter, the electrical bridge element on the cover layer interconnects the conductor layer segments 11 of two adjacent layer segments 3.1, 3.2.

[0510] The layer segments 3.1, 3.2,... are rectangular, preferably having a length of at least about 125 mm and a width of at least about 70 mm.

[0511] The layer segments 3.1, 3.2,... shown in FIG. 23 are rectangular, and the length of each layer segment exceeds at least about three times the width. In other words, the form of the layer segment is similar to a stripe.

[0512] The layer segments 3.1 and 3.2 are arranged on the carrier layer 7 adjacent to each other in only one row at a predetermined distance d. The predetermined distance d is in the range of 0 to 1500 μm and particularly depends on the flow behavior of the materials of the adjacent layer segments 3.1 and 3.2.

[0513] The optoelectronic device 1 further has two electrical bridge elements 34. These two electrical bridge elements 34 extend between any two adjacent layer segments 3.1 and 3.2 and electrically interconnect the conductor layer segments 11 arranged on the layer segments 3.1 and 3.2.

[0514] The two electrical bridge elements 34 each connect all of the adjacent layer segments 3.1 and 3.2. The first electrical bridge element 34 connects the adjacent layer segments 3.1 and 3.2 in the first edge region, and the second electrical bridge element 34 connects the adjacent layer segments 3.1 and 3.2 in the second edge region. The first edge region and the second edge region are particularly located at the two short edges of the layer segment.

[0515] By using two electrical bridge elements, current can be supplied to each layer segment. The layer segments can be connected in parallel or in series with each other.

[0516] Next, referring to FIGS. 24A to 24E, a method for manufacturing an optoelectronic device 1, for example, at least a partially transparent pane of a vehicle, includes the following steps: arranging at least one optoelectronic component 9 on the upper surface 3.1 of the first layer 3; providing a conductor layer 11.0 on the upper surface 3.1 and at least one optoelectronic component 9; structuring the conductor layer 11.0 such that the resulting structured conductor layer 11 includes an electrical conductor path for supplying electricity to at least one optoelectronic component 9 by using this structured conductor layer 11; and including.

[0517] As shown in FIG. 24A, a number of optoelectronic components 9 are arranged on the upper surface 3.1 of the first layer 3. Here, the number of optoelectronic components is three.

[0518] The optoelectronic component particularly has an electrical contact 18 arranged on the upper surface 9.1 of the optoelectronic component 9. In particular, all the electrical contacts 18 (in particular, contact pads) of the optoelectronic component 9 are arranged on the upper surface 9.1 of the optoelectronic component 9. The optoelectronic component 9 is arranged on the upper surface 3.1 of the first layer 3 such that the electrical contact 18 faces away from the upper surface 3.1 of the first layer 3. Thus, the optoelectronic component 9 can be formed as a flip-chip LED, a thin-film flip-chip LED, or a flip-chip μLED.

[0519] In some embodiments, after the step of arranging at least one optoelectronic component 9 on the upper surface 3.1 of the first layer 3, the step of detecting the position of at least one optoelectronic component 9, particularly using automated optical inspection (AOI), can be continued. Thereby, it can be ensured that the optoelectronic component 9, particularly at least one electrical contact 18 arranged on the upper surface 3.1 of the optoelectronic component, is aligned with the structured conductor layer 11 in a subsequent process. Alternatively, an arrangement process can be used that provides sufficient accuracy for the optoelectronic component 9, particularly at least one electrical contact 18 arranged on the upper surface 9.1 of the optoelectronic component 9 to be aligned with the structured conductor layer.

[0520] As shown in FIG. 24B, the conductor layer 11.0 is provided on the upper surface 3.1 and on the optoelectronic component 9. In particular, the step of providing the conductor layer 11.0 on the upper surface 3.1 and on the optoelectronic component 9 includes the step of laminating the conductor layer 11.0 on the upper surface 3.1 and on the optoelectronic component 9 using a lamination device. In particular, a heated roll laminator can be used to laminate the conductor layer 11.0 on the upper surface 3.1 and on the optoelectronic component 9, particularly in a roll-to-roll process.

[0521] The step of providing the conductor layer 11.0 on the upper surface 3.1 and on the optoelectronic component 9 further includes the step of at least partially embedding the optoelectronic component 9 in the first layer 3. Push the optoelectronic component 9 into the first layer 3 and simultaneously dispose the conductor layer 11.0 on the upper surface 3.1 of the first layer 3 and on the optoelectronic component 9. Thus, preferably, the step of embedding at least one optoelectronic component 9 in the first layer 3 and the step of disposing (in particular, laminating) the conductor layer 11.0 on the upper surface 3.1 of the first layer 3 and on the optoelectronic component 9 are performed simultaneously. This can be achieved, for example, by heating the optoelectronic component 9 and / or the first layer 3 to an appropriate temperature and pushing the optoelectronic component 9 into the first layer 3 while the optoelectronic component 9 and / or the first layer 3 is at its appropriate temperature.

[0522] The optoelectronic component 9 is embedded in the first layer 3 such that, in particular, the upper surface 9.1 of the optoelectronic component 9 is disposed within the plane defined by the upper surface 3.1 of the first layer 3 (see FIG. 24B). Thus, the conductor layer 11.0 is disposed on a substantially flat surface formed by the upper surface 3.1 of the first layer 3 and the upper surface 9.1 of the optoelectronic component 9.

[0523] Thereafter, as shown in FIG. 24C, provide a mechanical and electrical interconnection between the conductor layer 11.0 and the electrical contact 18 of the optoelectronic component 9. The step of mechanically and electrically interconnecting the conductor layer 11.0 with the electrical contact 18 of the optoelectronic component 9 includes the step of regularly laser welding the conductor layer 11.0 to the electrical contact 18 in the region above the electrical contact 18. In particular, the regular laser welding of the conductor layer 11.0 and the electrical contact 18 is only performed in the region above the electrical contact 18 such that a mechanical and electrical interconnection between the conductor layer and the electrical contact of the optoelectronic component is provided.

[0524] The conductor layer 11.0 can be structured as shown in FIG. 24D such that the resulting structured conductor layer 11 includes an electrical conductor path for supplying electricity to at least one optoelectronic component 9 by use of this structured conductor layer 11.

[0525] In particular, the step of structuring the conductor layer 11.0 includes lithographic structuring of the conductor layer 11.0, in particular photolithographic structuring of the conductor layer 11.0. By using a photomask (also called an optical mask), a geometric pattern of light is transferred onto a photosensitive (in particular, light-sensitive) chemical photoresist on the conductor layer 11.0. The light irradiation causes a chemical change in the photoresist that enables a part of the photoresist to be removed by a special solution called a developer. Positive photoresist is a common type and becomes soluble in the developer when exposed. By using negative photoresist, the unexposed areas become soluble in the developer. Through a series of chemical processes, the exposure pattern can be etched into the conductor layer 11.0.

[0526] Accordingly, the first part 11.1 of the conductor layer is arranged on the upper surface 3.1 of the first layer 3, and the second part 11.2 of the conductor layer is arranged on the upper surface 9.1 of the optoelectronic component 9 and contacts the electrical contact 18 of the optoelectronic component 9. In particular, the second part 11.2 of the conductor layer is mechanically and electrically interconnected with the electrical contact 18 of the optoelectronic component 9.

[0527] As shown in FIG. 24E, the method further includes the step of disposing a planarization layer 33 on the first layer 3 and the structured conductor layer 11 such that the structured conductor layer 11 is embedded in the planarization layer 33.

[0528] FIGS. 25A - 25E show the steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. In contrast to the embodiment shown in FIGS. 24A - 24E, before providing the conductive layer 11 on the upper surface 3.1 and on the optoelectronic component 9, a conductive adhesive or solder is provided in the form of an electrical contact element 11.5 on at least the electrical contact 18 of the optoelectronic component. In particular, the electrical contact element 11.5 is arranged only on the electrical contact 18 and not on the upper surface 3.1 of the first layer 3 and on the exposed areas of the upper surface 9.1 of the optoelectronic component 9.

[0529] Providing the conductor layer 11 on the upper surface 3.1 and on the optoelectronic component 9, in particular, the step of laminating includes the step of mechanically and electrically interconnecting the conductor layer 11.0 with the electrical contact 18 of the optoelectronic component 9 as shown in FIG. 25C. Accordingly, heat the conductor layer 11.0 until it exceeds the melting / reaction temperature of the material of the electrical contact element 11.5. In particular, after cooling the electrical contact element 11.5, provide a mechanical and electrical interconnection between the conductor layer 11.0 and the electrical contact 18 of the optoelectronic component 9.

[0530] Structure the conductor layer 11.0 as shown in FIG. 25D, and dispose a planarization layer on the first layer 3 and the structured conductor layer 11 as shown in FIG. 25E such that the structured conductor layer 11 is embedded in the planarization layer 33.

[0531] Next, referring to FIGS. 26A - 26E, the conductor layer 11.0 has a first conductive material layer 11.01 and a second conductive material layer 11.02 as compared to the above-described embodiment. The second conductive material layer 11.02 can in particular comprise or consist of an adhesive, solder, or solder adhesive that provides isotropic or anisotropic conductivity. Compared to FIG. 25B, the second conductive material layer 11.02 is disposed on the first conductive material layer 11.01 before providing the conductor layer 11.0 on the upper surface 3.1 and on the optoelectronic component 9. Accordingly, the second conductive material layer 11.02 is provided over the entire region of the upper surface 3.1 of the first layer 3 and is not provided only between the electrical contact 18 of the optoelectronic component 9 and the conductor layer 11.0.

[0532] Providing the conductor layer 11 on the upper surface 3.1 and on the optoelectronic component 9, in particular, the step of laminating includes the step of mechanically and electrically interconnecting the conductor layer 11.0 with the electrical contact 18 of the optoelectronic component 9 as shown in FIG. 26C. Accordingly, heat the conductor layer 11.0 until it exceeds the melting / reaction temperature of the second conductive material layer 11.02. In particular, after cooling the second conductive material layer 11.02, provide a mechanical and electrical interconnection between the conductor layer 11.0 and the electrical contact 18 of the electronic component 9.

[0533] Figures 27A - 27E illustrate the steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. In contrast to the embodiment shown in Figures 24A - 24E, the conductor layer 11.0 comprises or consists of a photo - structurable nanoparticle paste containing conductive nanoparticles such as, for example, silver and / or gold and / or copper nanoparticles.

[0534] The conductor layer 11.0 is structured as shown in Figure 27C, and a mechanical and electrical interconnection between the conductor layer 11.0 and the electrical contact 18 of the optoelectronic component 9 is provided, as shown in Figure 27D, by sintering the conductor layer 11.0, in particular the photo - structurable nanoparticle paste. The sintering process can include an oven process if the first layer 3 and the optoelectronic component 9 can withstand a temperature of at least about 140 °C. Alternatively, the sintering process can include a photonic curing process.

[0535] The planarization layer is arranged on the first layer 3 and the structured conductor layer 11 as shown in Figure 27E such that the structured conductor layer 11 is embedded in the planarization layer 33.

[0536] Figures 28A - 28E illustrate the steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. Compared to the above - mentioned embodiment, the optoelectronic component 9 is not embedded in the first layer 3 but is arranged on the upper surface 3.1 of the first layer 3.

[0537] In an intermediate step between Figures 28A and 28B, a flat conductor layer 11.0 is provided on the upper surface 9.1 of the optoelectronic component. Thereafter, Figure 28B shows the step of deep - etching the conductor layer 11.0 such that the upper surface 9.1 of the optoelectronic component 9 and the upper surface 3.1 of the first layer 3 are covered by the conductor layer 11.0.

[0538] The conductor layer 11.0 is structured as shown in Figure 28C such that a first portion 11.1 of the conductor layer is arranged on the upper surface 3.1 of the first layer 3, a second portion 11.2 of the conductor layer is arranged on the upper surface 9.1 of the optoelectronic component 9, and an intermediate portion 11.3 of the conductor layer is arranged on the side surface 9.2 of the optoelectronic component 9. The intermediate portion 11.3 of the conductor layer interconnects the first portion 11.1 and the second portion 11.2 of the conductor layer.

[0539] As shown in FIG. 28D, a mechanical and electrical interconnection between the conductor layer 11.0 and the electrical contact 18 of the optoelectronic component 9 is provided by sintering the conductor layer 11.0, in particular a nanostructured nanoparticle paste that can be optically structured. Further, as shown in FIG. 28E, a planarization layer is arranged on the first layer 3 and the structured conductor layer 11 such that the structured conductor layer 11 and the optoelectronic component are embedded in the planarization layer 33.

[0540] As shown in FIG. 29A, the conductor layer is provided on the upper surface 3.1 of the first layer 3 that is structured such that the resulting structured conductor layer 11 includes an electrical conductor path suitable for supplying electricity to at least one optoelectronic component.

[0541] To electrically connect the contacts of at least one optoelectronic component to the structured conductor layer, as shown in FIG. 29B, an electrical contact element 11.5 is provided on the structured conductor layer 11. The electrical contact element 11.5 is provided on the structured conductor layer 11, as shown in FIG. 29C, such that the contact element is aligned with the contacts of at least one optoelectronic component that are arranged on the structured conductor layer, in particular on the electrical contact element. In particular, the contact element 11.5 is provided at a defined position on the structured conductor layer 11. The position is defined such that the contact element 11.5 is aligned with the electrical contact 18 of the optoelectronic component 9.

[0542] Each optoelectronic component 9 can be, for example, a flip chip having two electrical contacts 18 at defined positions on its bottom surface. The contact elements 18 for such a flip chip are arranged on the structured conductor layer 11 such that each contact 18 of the flip chip 9 contacts one contact element 11.5.

[0543] The contact element 11.5 is provided by applying a solder paste on the structured conductor layer 11 and is heated using photonic soldering to mechanically and electrically interconnect the conductor layer 11 with the electrical contact 18 of the optoelectronic component 9, as shown in FIG. 29D.

[0544] As shown in FIG. 29E, a planarization layer is disposed on the first layer 3 and the structured conductor layer 11 such that the structured conductor layer 11, the electrical contact element 11.5, and the optoelectronic component 9 are embedded in the planarization layer 33.

[0545] In some embodiments of the present invention, at least partially flexible optoelectronic devices have a reinforcement material to stabilize at least the connection regions of the optoelectronic device and enable reliable electrical interconnection between the optoelectronic device and the environment.

[0546] Referring now to FIGS. 30A - 30D, the steps of providing a method for manufacturing an optoelectronic device 1, for example, an at least partially transparent pane of a vehicle, include: providing a carrier substrate 35 and a release layer 36 disposed on the carrier substrate 35; providing a structured conductor layer 11 on the release layer 36 on the side opposite to the carrier substrate 35; disposing at least one optoelectronic component 9 on the structured conductor layer 11; wherein the structured conductor layer 11 has electrical conductor paths for supplying electricity to at least one optoelectronic component 9; providing a first layer 3 on the release layer 36 (see FIG. 30B); wherein the first layer 3 covers the conductor layer 11 and at least one optoelectronic component 9 such that at least one optoelectronic component 9 is at least partially embedded in the first layer 3; removing the carrier substrate 35 and the release layer 36 (see FIG. 30C); and

[0547] As shown in FIG. 30A, the structured conductor layer 11 is disposed on the upper surface 36.1 of the release layer 36, and a number of optoelectronic components 9 are disposed on the upper surface 36.1 of the structured conductor layer and / or the release layer. Here, the number of optoelectronic components 9 is three.

[0548] In some embodiments, the step of providing the structured conductor layer on the release layer can include the step of growing a conductive material layer (e.g., copper, etc.) on the release layer.

[0549] As shown in FIG. 30B, thereafter, the first layer 3 is provided on the release layer 36 such that the first layer 3 covers the conductor layer 11 and the optoelectronic component 9. In particular, the optoelectronic component 9 and the structured conductor layer are embedded in the first layer 3 such that the upper surface 11.1 of the structured conductor layer and / or the upper surface 9.1 of the optoelectronic component 9 are disposed within a plane defined by the upper surface 3.1 of the first layer 3.

[0550] Thereafter, as shown in FIG. 30C, the carrier substrate 35 and the release layer 36 are removed by dissolving the release layer 36 by any one of temperature, laser light, or a chemical dissolution process. Thus, the optoelectronic device can be easily and non-destructively removed from the carrier substrate. Thus, the release layer 36 can comprise or consist of a soluble material such as silicon nitride (SiN), for example.

[0551] As shown in FIG. 30D, the method can further include the step of providing a planarization layer 33 on the first layer 3 and / or the structured conductor layer 11 and / or the optoelectronic component 9 after removing the carrier substrate 35 and the release layer 36. Thus, the structured conductor layer 11 and / or the optoelectronic component 9 can be disposed between the first layer 3 and the planarization layer 33. Thus, the structured conductor layer 11 can be disposed within the neutral fiber of the stack of the first layer 3, the structured conductor layer 11, and the planarization layer 33.

[0552] Figs. 31A to 31E show the steps of another exemplary embodiment of the method for manufacturing the optoelectronic device 1. In addition to the embodiment shown in Figs. 30A to 30D, the method further includes a step of providing at least one reinforcing material 37 on the release layer 36 and / or the structured conductor layer 11. The step of providing at least one reinforcing material 37 on the release layer 36 and / or the structured conductor layer 11 is performed not only before the step of removing the release layer 36 and the temporary carrier substrate 35 (see Fig. 31D), but also before the step of providing the first layer 3 (see Fig. 31C). The reinforcing material can preferably function as a stabilizer for at least the connection region of the optoelectronic device, enabling a reliable electrical interconnection between the optoelectronic device and the environment.

[0553] The optoelectronic device can be made of, for example, a flexible material, and a rigid reinforcing material can be disposed in the edge region of the optoelectronic device to stabilize and reinforce at least the edge region of the optoelectronic device. The edge region and in particular the reinforcing material can be used as a connection region of the optoelectronic device, for example, to enable a reliable electrical interconnection between the optoelectronic device and the environment and / or at least one adjacent second optoelectronic device.

[0554] The reinforcing material is particularly provided in the edge region of the release layer 36, and the edge region of the release layer includes the edge 36.2 of the release layer.

[0555] As shown in Figs. 31B to 31E, the reinforcing material 37 at least partially covers the structured conductor layer 11. The reinforcing material preferably covers the structured conductor layer 11 in the edge region of the structured conductor layer 11, and the edge region of the structured conductor layer 11 includes the edge 11.4 of the structured conductor layer 11. The edge region of the structured conductor layer 11 can at least partially coincide with the edge region of the release layer 36.

[0556] According to these figures, the outer edge 37.1 of the reinforcing material 37 is aligned with the edge 36.2 of the release layer 36. Therefore, the side surface of at least one reinforcing material and the side surface of the release layer are arranged in the same plane.

[0557] As shown in FIG. 31C, the first layer 3 is then provided on the release layer 36 such that the first layer 3 covers the conductor layer 11, the optoelectronic component 9, and the reinforcement 37. In particular, the optoelectronic component 9 and the structured conductor layer are embedded in the first layer 3 such that the upper surface 11.1 of the structured conductor layer is disposed within the plane defined by the upper surface 3.1 of the first layer 3. However, the reinforcement 37 is partially embedded in the first layer 3 such that the reinforcement 37 protrudes from the side surface 3.2 of the first layer, in particular the first layer.

[0558] Thus, the first layer 3 does not completely cover the edge region of the release layer 36, and thus the first layer 3 is distal from the edge 36.2 of the release layer 36.

[0559] As shown in FIG. 31E, the method can further include the step of providing a planarization layer 33 on the first layer 3 and / or the structured conductor layer 11 and / or the optoelectronic component 9 and / or the reinforcement 37 after removing the carrier substrate 35 and the release layer 36. The planarization layer 33 can, in some embodiments, match the size of the first layer 3 as shown on the left side of FIG. 31E, or can be larger than the size of the first layer 3 as shown on the right side of FIG. 31E in some embodiments. In particular, the edge 33.1 of the planarization layer 33 can, in some embodiments, be aligned with the outer edge 37.1 of the reinforcement 37.

[0560] Next, referring to FIGS. 32A to 32D, this method can further include the step of changing the shape of the intermediate product 38 (see FIG. 32C) before providing the first layer 3 on the release layer 36 (see FIG. 32D). The intermediate product 38 includes a carrier substrate 35 and a release layer 36, a structured conductor layer 11 on the release layer 36, optoelectronic components 9 on the structured conductor layer 11, and optionally at least one reinforcement 37 on the release layer 36. The intermediate product 38 can preferably be obtained by the steps of providing a carrier substrate 35 and a release layer 36 disposed on the carrier substrate 35, providing a structured conductor layer 11 on the release layer 36, disposing optoelectronic components 9 on the structured conductor layer 11, and providing at least one reinforcement 37 on the release layer 36 and / or the structured conductor layer 11. The changed shape of the intermediate product 38 can have at least one curved surface, in particular a curved upper surface 3.1 of the first layer 3, as shown in FIGS. 32C and 32D.

[0561] After the step of changing the shape of the intermediate product 38, as shown in FIG. 32D, the first layer 3 is provided on the conductor layer 11 and the optoelectronic components 9. The step of changing the shape of the intermediate product 38 can be carried out, for example, by using a mold and pressing the intermediate product 38 into the mold. Thereafter, the first layer 3 can be provided on the conductor layer 11 and the optoelectronic components 9, for example, by molding the first layer 3 on the conductor layer 11 and the optoelectronic components 9. Thus, the first layer 3 can comprise or consist of a mechanically robust material such as, for example, a molding compound, silicone, or a transparent or diffusive filling resin.

[0562] As shown in FIG. 32D, the first layer can have a curved upper surface 3.1 (see the left FIG. 32D) and a curved surface opposite the upper surface 3.1 (see the right FIG. 32D).

[0563] Next, referring to FIGS. 33A to 33C, the first layer 3 can be provided on the conductor layer 11 and the optoelectronic component 9 by, for example, molding the first layer 3 on the conductor layer 11 and the optoelectronic component 9 without changing the shape of the intermediate product 38 (see FIG. 33C). Thereby, the upper surface 3.1 and the structured conductor layer 11 can form a substantially flat surface.

[0564] In a further step, the optoelectronic device 1 can be arranged on a curved surface and fixed, in particular adhered, to the curved surface. In a preferred embodiment, the curved surface of the intermediate product 38 and / or the curved surface of the optoelectronic device 1 can coincide with the curved surface on which the optoelectronic device 1 is to be arranged.

[0565] Next, referring to FIG. 34, a method for manufacturing an optoelectronic device is shown. In a first step, an initial layer stack 39.0 is provided, in particular an initial layer stack 39.0 having an unstructured top layer 39.0.1. Thereafter, this unstructured top layer 39.0.1 is structured, for example, by using a laser beam. For example, by partially ablating the top layer 39.1, an opening 40 is obtained in the upper surface 39.1.1 of this top layer. The opening 40 has the form of a cavity, the bottom surface 40.1 and the side surface 40.2 of which are formed by the top layer 39.1.

[0566] The opening 40 is filled with a filling material 22, in particular an adhesive, and an electronic or optoelectronic component 9 is arranged within the opening 40 on the bottom surface 40.1 of the opening 40. The electrical contacts 18 of the electronic or optoelectronic component 9 are arranged on the upper surface 9.1 of the component 9 and thus face away from the layer stack 39. By arranging the electronic or optoelectronic component 9 within the opening 40, a boundary region, in particular a gap 21, is formed between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening. By pushing the electronic or optoelectronic component 9 into the opening 40 and thus into the filling material 22, the gap 21 is filled with the filling material 22, and an accumulation of the filling material 22 is generated on the filled gap 21, in particular on a plane extending over the upper surface 39.1.1 of the topmost layer 39.1.

[0567] The filling material can be arranged between the topmost layer 39.1 and the bottom surface of the electronic or optoelectronic component 9. The bottom surface of the electronic or optoelectronic component 9 is on the side opposite to the upper surface 9.1 of the electronic or optoelectronic component 9.

[0568] The filling material 22 can in particular comprise or consist of an adhesive that fixes the electronic or optoelectronic component 9 within the opening 40 after curing.

[0569] In some embodiments, the filling material 22 can form a fillet weld between the upper surface 39.1.1 of the topmost layer 39.1 and the shell surface 9.2 of the electronic or optoelectronic component 9. In particular, the filling material 22 can be partially arranged within the gap 21 and can form a partial fillet weld between the upper surface 39.1.1 of the topmost layer 39.1 and the shell surface 9.2 of the electronic or optoelectronic component 9.

[0570] An electrical conductor arrangement, in particular a structured conductor layer 11, is arranged on the upper surface 39.1.1 of the topmost layer 39.1 and on the upper surface 9.1 of the electronic or optoelectronic component 9 and is in contact with the electrical contacts 18 of the electronic or optoelectronic component 9. The electrical conductor arrangement extends across the boundary region, in particular across the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening 40 and thus fills the gap 21.

[0571] Thus, the first part 11.1 of the electrical conductor arrangement 11 is arranged on the upper surface 39.1.1 of the uppermost layer 39.1, the second part 11.2 of the electrical conductor arrangement 11 is arranged on the upper surface 9.1 of the electronic or optoelectronic component 9, and is in contact with the electrical contact 18 of the electronic or optoelectronic component 9. The electrical contact 18 can in particular be formed by a contact pad and can be arranged on the upper surface 9.1 of the electronic or optoelectronic component 9.

[0572] The intermediate part 11.3 of the electrical conductor arrangement 11 extends beyond the boundary region and interconnects the first part 11.1 of the electrical conductor arrangement 11 and the second part 11.2 of the electrical conductor arrangement 11. The intermediate part 11.3 extending beyond the boundary region is arranged on the filling material 22.

[0573] The electronic or optoelectronic component 9 can comprise or consist of at least one of a light-emitting diode (LED), in particular a flip-chip LED, an integrated circuit (IC), a photodiode, a sensor, in particular an infrared sensor. In the example shown, the component 9 is a flip-chip LED. All the electrical contacts 18 of the flip-chip LED 9 are arranged on the upper surface 9.1 of the chip 9. By arranging the electrical conductor arrangement 11 on the upper surface 39.1.1 of the uppermost layer 39.1 and on the electrical contacts 18 of the electronic or optoelectronic component 9, the electronic or optoelectronic component 9 can be supplied with electricity.

[0574] In some embodiments, the step of disposing the first portion, the second portion, and the intermediate portion of the electrical conductor arrangement includes a so-called PICOS (Planar Interconnect On Substrate) process. This PICOS process can include, for example, the following steps. A seed layer, particularly a titanium copper alloy, is applied to the upper surface 9.1 of at least one electronic or optoelectronic component 9, and / or the upper surface 39.1.1 of the top layer 39.1, and / or the boundary region, particularly the gap 21, and thus also on the filler 22. Next, a photoresist layer is applied to the seed layer, and the photoresist layer is structured such that regions of the seed layer are exposed. The exposed regions of the seed layer are subjected to a galvanic plating process, and copper titanium is electrodeposited on the exposed regions of this seed layer. The regions of the photoresist layer and the underlying seed layer left by the structuring are removed. Also, the step of subjecting the seed layer to a galvanic plating process and the step of applying the photoresist layer to be structured next can be interchanged. Thus, a galvanic plating process can be performed on a larger surface, and then structuring can be performed. Also, the galvanic plating process can include an electroplating process. In at least some embodiments, an injection or printing process can be used instead of the galvanic plating process.

[0575] Through this procedure, the electronic or optoelectronic component 9 can be "framed" by the electrical conductor arrangement 11, so that both the mechanical stability and the electrical interconnection of at least one electronic or optoelectronic component 9 can be ensured using the PICOS process.

[0576] As shown in FIG. 35, the layer stack 39 has a top layer 39.1 and a bottom layer 39.2. The bottom layer 39.2 is disposed below the top layer 39.1. As described with reference to FIG. 34, an initial layer stack 39.0 having an unstructured top layer 39.0.1 can be provided, and the top layer 39.0.1 can be structured to obtain at least one opening 40 on the upper surface 39.1.1 of the top layer 39.1.

[0577] In some embodiments, a layer stack 39 having at least one existing opening 40 can be provided. Thus, for example, at least one opening 40 can be generated by drilling or mechanically opening through-holes in the top layer 39.1 before providing the layer stack 39.

[0578] Thereafter, the filler 22 is filled into the opening 40, for example, by a process of distributing, injecting, printing, spraying, and / or stamping the filler 22.

[0579] The electronic or optoelectronic component 9 is disposed within the opening and is pushed into the filler 22, so that the bottom layer 39.2 carries the electronic or optoelectronic component 9. By disposing the electronic or optoelectronic component 9 within the opening 40, a boundary region, in particular, a gap 21 is formed between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening 40, and this gap 21 is filled with the filler 22.

[0580] As shown in both FIGS. 34 and 35, the electronic or optoelectronic component 9 is partially disposed within the opening 40 such that the upper surface 9.1 of the electronic or optoelectronic component 9 protrudes from the upper surface 39.1.1 of the top layer 39.1, in particular, by a height H. The height H is preferably at most half of the thickness t of the electronic or optoelectronic component 9. Thus, the electronic or optoelectronic component 9 can be partially disposed within the opening 40 such that at most half of the thickness t of the electronic or optoelectronic component 9 protrudes from the upper surface 39.1.1 of the top layer 39.1.

[0581] In some embodiments, at least one electronic or optoelectronic component 9 can be completely disposed within the opening 40. The upper surface 9.1 of the electronic or optoelectronic component 9 can be disposed within a reference plane extending to the upper surface 39.1.1 of the top layer 39.1. In other words, the upper surface 9.1 of the electronic or optoelectronic component 9 and the upper surface 39.1.1 of the top layer 39.1 are disposed in the same plane and form a flat surface.

[0582] As described for the embodiment of FIG. 34, the electrical conductor arrangement, in particular the structured conductor layer 11, is arranged on the upper surface 39.1.1 of the uppermost layer 39.1 and on the uppermost surface 9.1 of the electronic or optoelectronic component 9. It is in contact with the electrical contact 18 of the electronic or optoelectronic component 9. The electrical conductor arrangement extends beyond the boundary region. Thus, this fills the gap 21 between the shell surface 9.2 of the electronic or optoelectronic component 9 and the side surface 40.2 of the opening 40.

[0583] Referring next to FIG. 36, the layer stack 39 has an uppermost layer 39.1 and a lowermost layer 39.2. The lowermost layer 39.2 preferably comprises or consists of a material such as PVB or EVA, for example.

[0584] Compared to FIG. 35 above, no filling material is used to fix the electronic or optoelectronic component 9 in the opening 40. Instead, at least the lowermost layer 39.2 is heated temporarily, and the electronic or optoelectronic component 9 is placed in the opening, in particular simultaneously, and pushed into the lowermost layer 39.2. The boundary region, in particular the gap 21, located between the upper surface 9.1 of the electronic or optoelectronic component 9 and the adjacent upper surface 39.1.1 of the uppermost layer 39.1 is filled by pushing the electronic or optoelectronic component 9 into the temporarily heated lowermost layer 39.2, because the material of the lowermost layer 39.2 flows into the boundary region.

[0585] An electrical conductor arrangement, in particular a structured conductor layer 11, is arranged on the upper surface 39.1.1 of the uppermost layer 39.1 and on the upper surface 9.1 of the electronic or optoelectronic component 9 and is in contact with the electrical contact 18 of the electronic or optoelectronic component 9. The electrical conductor arrangement extends beyond the cured boundary region.

[0586] As shown in FIG. 37, there is an initial layer stack 39.0 having an unstructured uppermost layer 39.0.1 and a lowermost layer 39.2, the unstructured uppermost layer 39.0.1 comprising or consisting of a photoresist, in particular a photo-structurable resist. The unstructured uppermost layer 39.0.1 is structured, for example, using a lithographic structuring (see the arrow in FIG. 37) to obtain at least one opening 40 on the upper surface 39.1.1 of the uppermost layer 39.1.

[0587] After obtaining at least one opening 40 on the upper surface 39.1.1 of the uppermost layer 39.1, the process steps shown in FIG. 35 are executed according to the corresponding description.

[0588] Next, referring to FIG. 38A, a top view and a cross-sectional view of a prior art optoelectronic device are shown. The optoelectronic device has a transparent substrate having four pixels, and each pixel has a light emitter disposed within the transparent substrate. The light emitted from the optoelectronic light source illuminates each pixel such that, when viewed from above, the brighter light is located in the middle of the pixel and the less bright light fills the remaining region of the pixel.

[0589] FIG. 38B shows a top view and a cross-sectional view of an optoelectronic device 1 according to the present invention. The optoelectronic device has a layer stack 39 having a plurality of pixels 90. The plurality of pixels 90 are exemplarily shown by four pixels in FIG. 38B. Each pixel of the plurality of pixels has at least one optoelectronic light source 9 and a first pixel region 90.1 on the upper surface 39.3 of the layer stack 39. The light from the optoelectronic light source 9 illuminates each pixel region such that, when viewed from above, the entire pixel region is uniformly illuminated by scattered light and a defined and / or sharp edge of the first pixel region is generated. Thus, in some embodiments, the optoelectronic device 1 can have, for example, a light scattering arrangement or a structured light scattering arrangement for scattering the light from the optoelectronic light source 9 to uniformly illuminate the entire pixel region 90.1. In some embodiments, the optoelectronic device 1 can have a light guiding layer and / or a reflective layer for guiding or reflecting the light from the optoelectronic light source 9 to uniformly illuminate the pixel region 90.1.

[0590] The pixel region 90.1 is defined by the light emitting region of each pixel and can have a rectangular, square, circular, elliptical, or any other outer contour. The shape and size of each pixel region can be different for each pixel. In FIG. 38B, a square pixel region 90.1 is exemplified.

[0591] FIG. 39 is a cross-sectional view of a photoelectronic device according to the prior art. The photoelectronic device includes a photoelectronic light source 9 embedded in a transparent substrate, a first reflective layer 42 disposed on the upper surface of the photoelectronic light source 9, a second reflective layer 43 disposed below the photoelectronic light source 9, and a light scattering layer 41 disposed on the upper surface of the transparent substrate. The scattering layer 41 can be configured to scatter the light from the photoelectronic light source 9, thereby providing illumination of the photoelectronic device shown in FIG. 38A. Thus, when viewed from above, the brighter light is located in the middle of the photoelectronic device, and the less bright light fills the remaining area of the photoelectronic device.

[0592] In some embodiments, by changing the scattering layer, uniform illumination of the pixels of the photoelectronic device can be achieved.

[0593] The photoelectronic device shown in FIG. 40 has a layer stack having a plurality of pixels 90. Exemplarily, only one of the plurality of pixels is shown in FIG. 40. This pixel has a photoelectronic light source 9 embedded in the first layer 3 of the layer stack 39. According to this embodiment, the first layer 3 is the only layer of the layer stack, while the layer stack can also have additional layers. A first reflective layer 42 is disposed on the upper surface 9.1 of the photoelectronic light source, and a second reflective layer 43 is disposed on the bottom surface 9.3 of the photoelectronic light source. The upper surface 9.1 faces the upper surface 39.3 of the layer stack 39, and the bottom surface 9.3 faces away from the upper surface 39.3. The first and second reflective layers can direct the light from the photoelectronic light source in a suitable manner. As shown in the figure, the light emitted from the photoelectronic light source is directed such that the photoelectronic light source emits light radially from its side surface.

[0594] The pixel further includes a first pixel region 90.1 on the upper surface 39.3 of the layer stack and a structured light scattering arrangement 44 for scattering the light from the photoelectronic light source 9 to uniformly illuminate the first pixel region 90.1.

[0595] The first pixel region 90.1 has a central axis 45 which is perpendicular to the first pixel region 90.1 and passes through the center of the first pixel region. The central axis 45 extends in a direction orthogonal ...

Claims

1. 1. An optoelectronic device, comprising: a plurality of photoelectron light sources disposed on the first layer; the first layer comprises or consists of an at least partially transparent material; each optoelectronic light source of the plurality of optoelectronic light sources has a respective optical converter configured to convert light emitted from a corresponding optical source and emit converted light; the optical converter of each optoelectronic light source is disposed on the first layer and / or on the corresponding optoelectronic light source; Optoelectronic devices.

2. said photoelectron light sources being small LEDs each having an edge length of less than 200 μm; 10. The optoelectronic device of claim 1 .

3. The light converters of the different light sources are separated from each other; 10. The optoelectronic device of claim 1 .

4. the photoelectron light source being distributed across a first surface area of ​​the first layer; the first surface area is greater than a sum of the cross-sectional areas of the photoelectron light sources; 10. The optoelectronic device of claim 1 .

5. Each optical converter comprises a conversion particle having a diameter of at least about 1 μm to 30 μm; 10. The optoelectronic device of claim 1 .

6. each optical transducer having the form of a droplet covering said corresponding optical source; 10. The optoelectronic device of claim 1 .

7. each optical converter is disposed between the first layer and the corresponding optoelectronic light source; 10. The optoelectronic device of claim 1 .

8. each optical transducer having an adhesive configured to secure the corresponding optoelectronic light source to the first layer; 8. An optoelectronic device according to claim 7.

9. each optical converter is disposed on the first layer opposite the corresponding optoelectronic light source and facing a light emitting surface of the corresponding optoelectronic light source; 10. The optoelectronic device of claim 1 .

10. a light shield extends circumferentially around each light transducer; 10. The optoelectronic device of claim 1 .

11. each optical converter is formed as a platelet disposed on the first layer and facing an emitting surface of the corresponding optoelectronic light source; 10. The optoelectronic device of claim 1 .

12. Each platelet includes a conversion particle disposed within a matrix material.

12. An optoelectronic device according to claim 11.

13. each optical converter being embedded in the first layer; 10. The optoelectronic device of claim 1 .

14. The optoelectronic device further comprises a set of light sources without an optical converter.

10. The optoelectronic device of claim 1 .

15. the optical converters include at least a first set of optical converters and a second set of optical converters, the second set of optical converters configured to convert light to a different wavelength than the first set of optical converters; 10. The optoelectronic device of claim 1 .

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