Apparatus for substrate support with multi-zone control
The substrate support device with multi-zone temperature control addresses the issue of inconsistent temperature profiles by using regions with varying thermal properties and embedded channels, improving processing efficiency in semiconductor manufacturing.
Patent Information
- Application Number
- JP2024221762
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-21
- Filing Date
- 2024-12-18
- Publication Date
- 2025-07-03
AI Technical Summary
Conventional substrate supports in semiconductor manufacturing do not provide the desired temperature profile for specific processes, necessitating a substrate support with multi-zone temperature control.
A substrate support device with distinct regions having different temperature profiles, embedded channels for thermal management, and heating elements for independent control, formed from materials with varying thermal properties and surface characteristics.
Enables precise temperature control across different zones of a substrate, enhancing processing efficiency and effectiveness in semiconductor manufacturing.
Smart Images
Figure 2025100458000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure generally relates to an apparatus for a substrate support having multi-zone control. More specifically, the present disclosure relates to a substrate support having multiple temperature profiles.
Background Art
[0002] Some reaction chambers used in semiconductor manufacturing utilize a substrate support device to hold a substrate such as a wafer during processing. Also, the substrate support device may be used to heat the wafer to a desired temperature. Conventional substrate supports may not provide the desired temperature profile for a particular process. Therefore, it may be desirable to have a substrate support having multi-zone temperature control.
Summary of the Invention
[0003] Various embodiments of the present technology may provide a substrate support device having a surface with a first region having a first temperature profile, a second region having a second temperature profile, and a third region having a third temperature profile. Also, the substrate support device may have a first channel embedded in the body and disposed between the first region and the second region, and a second channel disposed between the second region and the third region.
[0004] According to one aspect, a substrate support device includes a body formed of a ceramic material having a first surface and an opposing second surface, the first surface having a first region having a first contact resistance and a first temperature profile, a second region having a second contact resistance and a second temperature profile, and a third region having a third contact resistance and a third temperature profile; a pedestal coupled to the second surface; and a plurality of heating elements embedded in the body and including a first channel disposed between the first region and the second region and a second channel disposed between the second region and the third region.
[0005] In one embodiment, the first, second, and third regions are concentric.
[0006] In one embodiment, the first region is located at the geometric center of the body, the second region is radially outward from the first region, and the third region is radially outward from the second region.
[0007] In one embodiment, the first region is formed of a first material having a first surface area and a first heat dissipation rate, the second region is formed of a second material having a second surface area and a second heat dissipation rate, the second material is different from the first material, and the third region is formed of a third material having a third surface area and a third heat dissipation rate, the third material being different from the second material.
[0008] In one embodiment, the device further comprises a plurality of electrodes embedded in the body and located above a plurality of heat generating elements, and the body is formed of a ceramic material including one of AlN, SiC, SiN, AlOx, and BeC.
[0009] In one embodiment, the plurality of channels are concentric.
[0010] In one embodiment, the plurality of channels can accommodate at least one of air and helium.
[0011] According to another aspect, a substrate support device includes a body formed of a ceramic material having a first surface and an opposing second surface, the first surface having a first region having a first temperature profile, a second region having a second temperature profile, and a third region having a third temperature profile, a pedestal coupled to the second surface, and a plurality of heat generating elements embedded in the body.
[0012] In one embodiment, the first, second, and third regions are concentric.
[0013] In one embodiment, the first region is located at the geometric center of the body, the second region is radially outward from the first region, and the third region is radially outward from the second region.
[0014] In one embodiment, the first region has a first surface area with a first roughness, the second region has a second surface area with a second roughness, the third region has a third surface area with a third roughness, and the first, second, and third roughnesses are different from each other.
[0015] In one embodiment, the apparatus further includes a plurality of electrodes embedded in the body and located above a plurality of heating elements, and the body is formed of a ceramic material including one of AlN, SiC, SiN, AlOx, and BeC.
[0016] In one embodiment, the first region is formed of a first material having a first surface area and a first heat dissipation rate, the second region is a second material having a second surface area and a second heat dissipation rate, which is different from the first material, and the third region is a third material having a third surface area and a third heat dissipation rate, which is different from the second material.
[0017] In yet another aspect, the system is a substrate support apparatus, including a body having a first surface and an opposing second surface, a cap disposed on the first surface of the body and having an outward-facing surface, the outward-facing surface having a first region with a first contact resistance, a second region with a second contact resistance, and a third region with a third contact resistance, a pedestal coupled to the second surface, and a plurality of heating elements embedded in the body.
[0018] In one embodiment, the first, second, and third regions are concentric.
[0019] In one embodiment, the first region is located at the geometric center of the body, the second region is radially outward from the first region, and the third region is radially outward from the second region.
[0020] In one embodiment, the cap further includes a plurality of channels including a first channel disposed between the first region and the second region and a second channel disposed between the second region and the third region.
[0021] In one embodiment, the system further includes a helium source connected to the plurality of channels.
[0022] In one embodiment, the first region has a first temperature profile, the second region has a second temperature profile, the third region has a third temperature profile, and the first, second, and third temperature profiles are different.
[0023] In one embodiment, the first region has a first surface area, the second region has a second surface area, the third region has a third surface area, and the first, second, and third surface areas are different from each other.
Brief Description of the Drawings
[0024] A more complete understanding of the present technology will be obtained by referring to the detailed description in view of the following exemplary drawings. In the following figures, like elements and steps are denoted by like reference numerals throughout the figures.
[0025]
Figure 1
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Figure 7
DETAILED DESCRIPTION OF THE INVENTION
[0026] The present technology can be described based on the components of the functional blocks and various processing steps. Such functional blocks can be realized by numerous components configured to perform specific functions and achieve various results. For example, the present technology may adopt a configuration using various gas lines, containers, reaction chambers, gas dispersion systems, and pumps.
[0027] Referring to FIG. 1, an exemplary system 100 may have a configuration including a reactor 105 with an upper body 103 and a lower body 104. The upper body 103 and the lower body 104 may be connected to each other. More specifically, the upper body 103 and the lower body 104 of the reactor 105 may form a reaction space 190 while being in surface contact and surface sealing with each other.
[0028] In various embodiments, the reactor 105 may be configured to perform processing on an object to be processed, such as a substrate 115 (e.g., a wafer). For example, the reactor 105 may be configured to perform heating, deposition, etching, polishing, ion implantation, and / or other processing on the object to be processed. In some embodiments, the reactor 105 may be configured to perform functions such as transporting the object to be processed, vacuum sealing, heating, exhausting, and / or other functions so that the object is processed within the reactor. In some embodiments, the reactor 105 may be a reactor in which an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process is performed.
[0029] In various embodiments, the upper body 103 may include a gas dispersion device 150 configured to flow vapor into the reaction space 190. The gas dispersion device 150 may include a plurality of through holes (not shown) disposed directly above the substrate support device 110.
[0030] In various embodiments, the system 100 may further include a gas source such as a container 125 configured to contain a gas such as a thermally conductive gas (e.g., helium). The container 125 may be connected to the pedestal 120 and / or the substrate support device 110 via a gas line 140. A pump 130 may be disposed between the container 125 and the pedestal 120 (and / or the substrate support device 110) to facilitate the flow of gas from the container 125 to the pedestal 120 (and / or the substrate support device 110).
[0031] In various embodiments, the reactor 105 may include a substrate support device 110 for supporting a substrate 115 within the reaction space 190. The substrate support device 110 may be supported by a pedestal 120. For example, the pedestal 120 may be connected to the bottom surface of the substrate support device 110. The substrate support device 110 may be configured to be vertically movable by being connected to a drive unit (not shown) for loading / unloading the substrate 115.
[0032] In various embodiments and with reference to FIGS. 3 and 7, the substrate support device 110 may include a body 201. The body may be formed of a ceramic material such as at least one of aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (SiN), aluminum oxide (AlOx), and beryllium carbide (BeC). The body 210 may include a first surface 300 and an opposing second surface 305. For example, the first surface 300 and the second surface 305 may be parallel to each other. The pedestal 120 may be connected to the second surface 305 of the body 201.
[0033] In various embodiments, the substrate support apparatus 110 may further include a cap 705. The cap 705 may be configured to include a first surface (i.e., an outward-facing surface) 720 and a second surface 715. The cap 705 may be disposed on the body 201. For example, the second surface 715 of the cap 705 may be disposed to directly contact the first surface 300 of the body 201. The cap 705 may be formed of a metallic material such as Hastelloy, nickel, titanium, etc. In other cases, the cap 705 may be formed of a ceramic material such as aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (SiN), aluminum oxide (AlOx), and beryllium carbide (BeC).
[0034] In various embodiments, and referring to FIGS. 2 and 3, the body 201 may be configured to provide multi-zone temperature control where each zone has a specific temperature profile. In an exemplary embodiment, the first surface 300 may include a first region 200 located at the geometric center of the body 210, a second region 205 located radially outward from the first region 200 and concentric with the first region 200, and a third region 210 located radially outward from the second region 205 and concentric with the second region 205.
[0035] In various embodiments, the temperature profile of each region may vary based on the contact resistance of the surface. The contact resistance of the surface of each region, and thus the temperature profile of each region, may be configured to vary based on surface area, heat dissipation rate, and surface roughness. For example, a higher temperature profile corresponds to a larger surface area, a higher heat dissipation rate, and a lower surface roughness (i.e., a smooth or polished surface). On the other hand, a lower temperature profile corresponds to a smaller surface area, a lower heat dissipation rate, and a higher surface roughness. In some cases, each region may have a different temperature profile. However, in some cases, two or more regions may have the same temperature profile. For example, the first region 200 may have a first temperature profile due to a first surface area, a first heat dissipation rate, and a first surface roughness. The second region 205 may have a second temperature profile due to a second surface area, a second heat dissipation rate, and a second surface roughness. The third region 210 may have a third temperature profile due to a third surface area, a third heat dissipation rate, and a third surface roughness. The surface area may be measured in mm 2 units, and the surface roughness may be measured in microns (μm) units.
[0036] The heat dissipation rate may vary by using materials with different thermal properties. For example, the first region 200 may be formed using a first material having a first heat dissipation rate, the second region 205 may be formed using a second material having a second heat dissipation rate, the third region 210 may be formed using a third material having a third heat dissipation rate, and the heat dissipation rates of the respective materials are different.
[0037] Additionally, or alternatively, the cap 705 may provide multi-zone temperature control where each zone has a specific temperature profile. For example, the cap 705 may be configured to include a plurality of zones as described above. In an exemplary embodiment, the first surface 720 of the cap 705 may be configured to include a first region 200 located at the geometric center of the body 210, a second region 205 located radially outward from the first region 200 and concentric with the first region 200, and a third region 210 located radially outward from the second region 205 and concentric with the second region 205.
[0038] In various embodiments, the temperature profile of each region may vary based on surface area, heat dissipation rate, and surface roughness. In some cases, each region may have a different temperature profile. However, in some cases, two or more regions may have the same temperature profile. For example, the first region 200 may have a first temperature profile based on a first surface area, a first heat dissipation rate, and a first surface roughness. The second region 205 may have a second temperature profile based on a second surface area, a second heat dissipation rate, and a second surface roughness. The third region 210 may have a third temperature profile based on a third surface area, a third heat dissipation rate, and a third surface roughness. The surface area may be measured in mm 2 units, and the surface roughness may be measured in microns (μm) units.
[0039] The heat dissipation rate may vary by using materials having different thermal properties. For example, the first region 200 may be formed using a first material having a first heat dissipation rate, the second region 205 may be formed using a second material having a second heat dissipation rate, and the third region 210 may be formed using a third material having a third heat dissipation rate, with the heat dissipation rates of the respective materials being different.
[0040] In various embodiments, and referring to FIGS. 1, 4-6, the body 201 may further include a plurality of channels, such as a first channel 400 and a second channel 405, to provide thermal breakage. The plurality of channels 400, 405 may be embedded within the body 201. In other words, the channels may be configured to be surrounded on all sides and have the ability to contain gas. The first channel 400 may have a circular shape concentric with the geometric center of the body 201. The second channel 405 may be concentric with the first channel 400. The channels 400, 405 may have a square, circular, or any other suitable cross-sectional shape. In various embodiments, the channels 400, 405 may have a cross-sectional area in the range of 2 mm 2 ~10 mm 2 .
[0041] In various embodiments, the first channel 400 may be disposed between the first region 200 and the second region 205. In other words, the first channel 400 may be disposed at or near the boundary between the first region 200 and the second region 205. Similarly, the second channel 405 may be disposed between the second region 205 and the third region 210. In other words, the second channel 405 may be disposed at or near the boundary between the second region 205 and the third region 210.
[0042] In various embodiments, the channels 400, 405 may be configured to be connected to the container 125 via the gas line 140. For example, the pump 130 may flow helium into the channels 400, 405 to circulate the helium gas to provide a pulse of helium or a constant flow of helium. As another aspect, the pump 130 may be used to facilitate the flow of air into the channels 400, 405. Similarly, the pump 130 may flow air into the channels and circulate the air to provide a pulse of air or a constant flow of air.
[0043] As an additional or alternative aspect, the cap 705 may include a plurality of channels 400, 405 embedded within the cap 705, as described above.
[0044] As another aspect, and referring to FIG. 7, the cap 705 may be configured to include a groove 710 in the second surface 715 of the cap 705 to provide thermal breakage. For example, the groove 710 may extend into the cap 705 at a depth of 3 mm to 8 mm, or 10% to 25% of the overall thickness of the cap 705.
[0045] In various embodiments, and referring to FIGS. 5-7, the body 201 may further include a plurality of heating elements 315 embedded within the body 201. The heating elements may be disposed to correspond to the first, second, and third regions. For example, the first heating element may be located directly below the first region 200, the second heating element may be located directly below the second region 205, and the third heating element may be disposed directly below the third region 210. The heating elements may be configured to operate independently of each other. In various embodiments, the heating elements may include any suitable heating device and / or system.
[0046] In various embodiments, the substrate support device 110 may be configured to perform an electrostatic chuck function. For example, the body 210 or the cap 705 may be configured to include a plurality of electrodes 310 configured for electrostatic chucking. The electrodes 310 may be embedded within the body 210 and disposed above the heating elements. Similarly, the electrodes 310 may be embedded within the cap 705.
[0047] In the foregoing description, the present technology has been described with reference to specific exemplary embodiments. The specific implementations illustrated and described are examples of the technology and its best mode and are not intended to limit the scope of the present technology in any way. Also, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the present method and system may not be described in detail. Further, the connection lines shown in the various figures are intended to represent exemplary functional relationships and / or steps between the various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system.
[0048] The present technology has been described with reference to specific exemplary embodiments. However, various modifications and changes may be made without departing from the scope of the present technology. The present description and drawings are to be regarded in an illustrative rather than a restrictive sense, and all such variations are intended to be included within the scope of the present technology. Accordingly, the scope of the present technology should be determined not by the specific examples described above alone, but by the described general concept embodiments and their legal equivalents. For example, the steps described in any method or process embodiment may be performed in any order, unless explicitly specified otherwise, and are not limited to the explicit order presented in the specific examples. Further, the components and / or elements described in any apparatus embodiment may be assembled or configured in various configurations to produce substantially the same result as the present technology and are thus not limited to the specific configuration described in the specific examples.
[0049] Advantages, other benefits, and solutions to problems have been described with reference to specific embodiments. However, any element that may give rise to or make more prominent any advantage, benefit, solution to a problem, or any specific advantage, benefit, or solution should not be construed as an important, required, or essential feature or component.
[0050] The terms "comprises", "comprising", or any variation thereof, are intended to be non - limiting in that a process, method, article, composition, or apparatus that comprises a list of elements does not include only those elements that are recited, but may also include other elements not expressly recited or inherent to such a process, method, article, composition, or apparatus. In addition to what is specifically recited, other combinations and / or variations of the above - described structures, arrangements, uses, ratios, elements, materials, or components used in the practice of this technology may be modified or specifically adapted to particular environments, manufacturing specifications, design parameters, or other operating requirements without departing from their general underlying principles.
[0051] This technology has been described with reference to exemplary embodiments. However, modifications and alterations may be made to the exemplary embodiments without departing from the scope of this technology. These and other modifications or alterations are intended to be included within the scope of this technology as set forth in the following claims.
Description of Reference Numerals
[0052] 100 System 103 Upper Body 104 Lower Body 105 Reactor 110 Substrate Support Device 115 Substrate 120 Pedestal 125 Container 130 Pump 140 Gas Line 150 Gas Dispersion Device 190 Reaction Space 200 First Region 201 Body 205 Second Region 210 Third Region 300 First Surface 305 Second Surface 310 Electrode 315 Heating element 400 First channel 405 Second channel 705 Cap 710 Groove 715 Second surface 720 First surface
Claims
1. A substrate support device comprising: a body formed of a ceramic material and having a first surface and an opposing second surface, wherein the first surface has a first region having a first contact resistance and a first temperature profile, a second region having a second contact resistance and a second temperature profile, a third region having a third contact resistance and a third temperature profile, and a body; a pedestal connected to the second surface; a plurality of channels embedded in the body, a first channel disposed between the first region and the second region, a second channel disposed between the second region and the third region, and a plurality of channels; a plurality of heating elements embedded in the body. A substrate support device.
2. The substrate support device according to claim 1, wherein the first region, the second region, and the third region are concentric.
3. The substrate support device according to claim 1, wherein the first region is located at the geometric center of the body, the second region is radially outside the first region, and the third region is radially outside the second region.
4. The substrate support device according to claim 1, wherein the first region is formed of a first material having a first surface area and a first heat dissipation rate, the second region is a second material having a second surface area and a second heat dissipation rate, and is formed of the second material different from the first material, the third region is a third material having a third surface area and a third heat dissipation rate, and is formed of the third material different from the second material. A substrate support device.
5. The substrate support device according to claim 1, further comprising a plurality of electrodes embedded in the body and located above the plurality of heating elements, wherein the body is formed of a ceramic material including one of AlN, SiC, SiN, AlOx, and BeC.
6. The substrate support device according to claim 1, wherein the plurality of channels are concentric.
7. The substrate support device according to claim 1, wherein the plurality of channels can accommodate at least one of air and helium.
8. A substrate support device comprising: a body formed of a ceramic material having a first surface and an opposing second surface, wherein the first surface has a first region having a first temperature profile, a second region having a second temperature profile, a body comprising a third region having a third temperature profile, a pedestal connected to the second surface, a substrate support device comprising a plurality of heating elements embedded in the body.
9. The substrate support device according to claim 8, wherein the first region, the second region, and the third region are concentric.
10. The substrate support device according to claim 8, wherein the first region is located at the geometric center of the body, the second region is radially outside the first region, and the third region is radially outside the second region.
11. The substrate support device according to claim 8, wherein the first region has a first surface area having a first roughness, the second region has a second surface area having a second roughness, the third region has a third surface area having a third roughness, and the first roughness, the second roughness, and the third roughness are different from each other.
12. The substrate support device according to claim 8, further comprising a plurality of electrodes embedded in the body and located above the plurality of heating elements, wherein the body is formed of a ceramic material including one of AlN, SiC, SiN, AlOx, and BeC.
13. The first region is formed of a first material having a first surface area and a first heat dissipation rate, the second region is formed of a second material having a second surface area and a second heat dissipation rate, the second material being different from the first material, the third region is formed of a third material having a third surface area and a third heat dissipation rate, the third material being different from the second material, the substrate support device according to claim 8.
14. A system, a substrate support device, a body comprising a first surface and an opposing second surface, a cap disposed on the first surface of the body and having an outward-facing surface, the outward-facing surface a first region having a first contact resistance, a second region having a second contact resistance, a cap having a third region having a third contact resistance, a pedestal connected to the second surface, A system comprising a substrate support device comprising a plurality of heating elements embedded in the body.
15. The system according to claim 14, wherein the first region, the second region, and the third region are concentric.
16. The system according to claim 14, wherein the first region is located at the geometric center of the main body, the second region is radially outside the first region, and the third region is radially outside the second region.
17. The cap further comprises a plurality of channels, and the plurality of channels a first channel disposed between the first region and the second region, a second channel disposed between the second region and the third region, and the system according to claim 14.
18. The system according to claim 17, further comprising a helium source connected to the plurality of channels.
19. The system according to claim 14, wherein the first region has a first temperature profile, the second region has a second temperature profile, the third region has a third temperature profile, and the first temperature profile, the second temperature profile, and the third temperature profile are different from each other.
20. The system according to claim 14, wherein the first region has a first surface area, the second region has a second surface area, the third region has a third surface area, and the first surface area, the second surface area, and the third surface area are different from each other.