Substrate processing apparatus

Abstract

To provide a substrate processing apparatus that is improved for performing uniform processing for a plurality of substrates which are immersed in a process liquid within a processing tank.SOLUTION: A substrate processing apparatus 1 comprises: a processing tank 2 in which a process liquid for immersing a plurality of substrates W is accumulated; a lifter 3 that aligns the plurality of substrates in a predetermined arrangement direction R1 within the processing tank such that principal surfaces of adjacent substrates face each other including spaces, to support them; a discharge pipe 4 that is arranged below within the processing tank; and a process liquid supply mechanism 5 that supplies the process liquid to the discharge pipe. The discharge pipe has a plurality of discharge holes 41 that are opened by including spaces in an arrangement direction. The plurality of discharge holes include a plurality of kinds of discharge holes having different apertures arranged along the arrangement direction.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that processes a substrate with a processing liquid. Examples of substrates to be processed include semiconductor wafers, substrates for flat panel displays (FPDs) such as liquid crystal display devices and organic electroluminescence (EL) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

Background Art

[0002] There is known a substrate processing apparatus that immerses and processes a plurality of substrates in a processing liquid stored in a processing tank. One example thereof is described in Patent Document 1. This substrate processing apparatus includes a processing tank that stores a processing liquid, a lifter that aligns and supports substrates in the arrangement direction within the processing tank, and a pair of tubular nozzles disposed on both sides of the substrate as viewed in the arrangement direction at the lower end of the processing tank. The tubular nozzles extend in the arrangement direction of the substrates and have a plurality of discharge holes arranged at equal intervals along the arrangement direction. In Patent Document 1, by setting the opening diameter of the discharge holes to 0.5 mm to 1.5 mm, it is possible to reduce the variation in discharge pressure among the plurality of discharge holes, and no large pressure loss occurs in each discharge hole, thereby forming a desired liquid flow in the processing liquid tank and enabling the substrates to be processed uniformly and well.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] One embodiment of the present invention provides a substrate processing apparatus improved for performing uniform processing on a plurality of substrates immersed in a processing liquid in a processing tank. **Means for Solving the Problems**

[0005] One embodiment of the present invention provides a substrate processing apparatus having the features exemplified below.

[0006] 1. A processing tank for storing a processing liquid for immersing a plurality of substrates, a lifter for aligning and supporting the plurality of substrates in a predetermined arrangement direction in the processing tank such that the main surfaces of adjacent substrates face each other with a gap therebetween, a discharge pipe disposed at a lower portion in the processing tank, having a plurality of discharge holes opened at intervals in the arrangement direction and including a plurality of types of discharge holes having different diameters arranged along the arrangement direction, and a processing liquid supply mechanism for supplying the processing liquid to the discharge holes. A substrate processing apparatus comprising:

[0007] 2. The substrate processing apparatus according to item 1, wherein the plurality of types of discharge holes include a first discharge hole having a first diameter disposed in a central region with respect to the arrangement direction, and a second discharge hole having a second diameter larger than the first diameter disposed in a region outside the central region with respect to the arrangement direction.

[0008] 3. The substrate processing apparatus according to item 2, wherein the plurality of types of discharge holes further include a third discharge hole having a third diameter larger than the second diameter disposed in a region outside the region where the second discharge hole is disposed with respect to the arrangement direction.

[0009] 4. The substrate processing apparatus according to item 1, wherein the plurality of types of discharge holes are arranged such that the diameter increases from the center to the outside in the arrangement direction.

[0010] 5. When the plurality of discharge holes include only a single type of discharge hole having the same diameter, based on the distribution in the arrangement direction of the flow velocity of the processing liquid on the main surface of the plurality of substrates, the diameters of the plurality of types of discharge holes are designed so as to have a flow velocity distribution with less variation than the reference flow velocity distribution. The substrate processing apparatus according to any one of items 1 to 4.

[0011] 6. The pair of discharge pipes are arranged on both sides of the plurality of substrates when viewed from the arrangement direction, and are configured such that a flow of the processing liquid from the plurality of discharge holes of the pair of discharge pipes along the bottom surface of the processing tank toward the center of the processing tank is formed. The substrate processing apparatus according to any one of items 1 to 5.

[0012] 7. The processing liquid includes ozone water or an etching liquid. The substrate processing apparatus according to any one of items 1 to 6.

[0013] 8. The plurality of discharge holes include a first discharge hole group composed of a plurality of first discharge holes having a first diameter and continuous in the arrangement direction, and a second discharge hole group composed of a plurality of second discharge holes having a second diameter different from the first diameter and continuous in the arrangement direction. The substrate processing apparatus according to item 1.

[0014] 9. The distribution region of the discharge flow rates of the plurality of first discharge holes constituting the first discharge hole group and the distribution region of the discharge flow rates of the plurality of second discharge holes constituting the second discharge hole group have an overlapping region. The substrate processing apparatus according to item 8.

[0015] 10. The distribution region of the discharge flow rates of the plurality of first discharge holes constituting the first discharge hole group overlaps with 30% or more of the distribution region of the discharge flow rates of the plurality of second discharge holes constituting the second discharge hole group. The substrate processing apparatus according to item 8.

[0016] 11. The distribution region of the discharge flow rates of the plurality of first discharge holes constituting the first discharge hole group includes the entire distribution region of the discharge flow rates of the plurality of second discharge holes constituting the second discharge hole group. The substrate processing apparatus according to item 8.

[0017] 12. The substrate processing apparatus according to any one of items 8 to 11, wherein the second diameter is 99% or more and 101% or less of the first diameter.

[0018] 13. The substrate processing apparatus according to any one of items 8 to 11, wherein the first diameter is 1 mm and the second diameter is 0.99 mm or more and 1.01 mm or less.

[0019] 14. The substrate processing apparatus according to any one of items 8 to 13, wherein the uniformity (variation) of the discharge flow rate of the processing liquid from the plurality of discharge holes is less than 2%.

[0020] 15. The substrate processing apparatus according to any one of items 1, 8 to 14, wherein the diameters of the plurality of types of discharge holes differ within a range of ±1%.

[0021] 16. The substrate processing apparatus according to any one of items 1, 8 to 15, wherein the plurality of types of discharge holes are two types of discharge holes having different diameters.

[0022] 17. The substrate processing apparatus according to any one of items 1, 8 to 16, wherein a flow of the processing liquid from the plurality of discharge holes of the discharge pipe toward a central region of the main surface of the substrate is formed.

[0023] 18. The substrate processing apparatus according to any one of items 1, 8 to 16, wherein a pair of the discharge pipes are arranged on both sides of the plurality of substrates when viewed from the arrangement direction, and a flow of the processing liquid from the plurality of discharge holes of the pair of discharge pipes toward a central region of the main surface of the substrate is formed.

[0024] 19. The substrate processing apparatus according to any one of items 1, 8 to 18, wherein the processing liquid contains one or more of phosphoric acid, an ammonia hydrogen peroxide water mixture, and TMAH (tetramethylammonium hydroxide).

[0025] 20. The substrate processing apparatus according to any one of claims 1, 8 to 19, wherein the processing liquid is discharged from the discharge holes at a temperature of 40°C or higher and 170°C or lower.

[0026] 21. The substrate processing apparatus according to any one of claims 1 to 20, wherein one end of the discharge pipe in the arrangement direction is blocked, and the introduction port of the processing liquid is provided at the other end in the arrangement direction.

[0027] 22. The substrate processing apparatus according to any one of claims 1 to 21, wherein one of the discharge holes is arranged between adjacent substrates with respect to the arrangement direction.

[0028] 23. The substrate processing apparatus according to any one of claims 1 to 22, wherein the discharge pipe is made of quartz.

Brief Description of the Drawings

[0029]

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Embodiments for Carrying Out the Invention

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0031] In order to perform more uniform processing on a plurality of substrates immersed in the processing liquid in the processing tank, it is preferable that the flow of the processing liquid near the main surface of the substrate is uniform with respect to the plurality of substrates, and particularly preferably, the flow velocity of the processing liquid near the main surface of the substrate is uniform. The inventor of the present application analyzed the flow of the processing liquid in the processing tank from this viewpoint and found that the flow velocity distribution of the processing liquid in the processing tank in which a plurality of substrates are arranged in an aligned state can be changed by varying the diameter of the ejection holes in the arrangement direction of the substrates, and thus the first embodiment described below was completed. The first embodiment provides a substrate processing apparatus having a configuration effective for improving the flow velocity distribution of the processing liquid in the processing tank.

[0032] FIG. 1 is a conceptual diagram for explaining the configuration of a substrate processing apparatus according to the first embodiment of the present invention. This substrate processing apparatus 1 is a batch-type apparatus capable of collectively processing a plurality of substrates W with a processing liquid. The substrate W is a substantially circular substrate in this embodiment. One typical example of a substantially circular substrate W is a semiconductor wafer.

[0033] The substrate processing apparatus 1 includes a processing tank 2 in which a processing liquid for immersing a plurality of substrates W is stored, a lifter 3 that aligns and supports the plurality of substrates W in a predetermined alignment direction in the processing tank 2, a discharge pipe 4 disposed at the lower part in the processing tank 2, and a processing liquid supply mechanism 5 that supplies the processing liquid to the discharge pipe 4. The substrate processing apparatus 1 further includes an overflow tank 6 that receives the processing liquid overflowing from the upper edge of the processing tank 2. The substrate processing apparatus 1 also includes a lifter drive mechanism 7 that moves the lifter 3 up and down to immerse the plurality of substrates W supported by the lifter 3 in the processing liquid stored in the processing tank 2 or lift the plurality of substrates W from the processing liquid. Further, the substrate processing apparatus 1 includes a controller 8 for controlling the processing liquid supply mechanism 5, the lifter drive mechanism 7, etc.

[0034] The processing liquid supply mechanism 5 includes a fresh liquid supply pipe 11 that supplies unused processing liquid from a processing liquid supply source 10 to the processing tank 2, and a circulation pipe 12 that constitutes a processing liquid circulation path passing through the processing tank 2. An on-off valve 14 is interposed in the fresh liquid supply pipe 11, and the opening and closing of this on-off valve 14 are controlled by the controller 8. One end of the circulation pipe 12 is connected to the bottom of the overflow tank 6, and the other end side branches into two branch pipe portions 13, and these branch pipe portions 13 are respectively connected to the two discharge pipes 4. In the circulation pipe 12, a pump 15, an in-line heater 16, and a filter 17 are interposed between the overflow tank 6 and the branch position to the branch pipe portions 13, and in this embodiment, they are arranged in the direction from the overflow tank 6 toward the discharge pipes 4 in this order of description. The pump 15 and the in-line heater 16 are controlled by the controller 8. The pump 15 sends out the processing liquid from the overflow tank 6 toward the discharge pipes 4. The in-line heater 16 is an example of a temperature regulator that adjusts the processing liquid passing through the circulation pipe 12 to an appropriate temperature. The filter 17 removes foreign substances in the processing liquid passing through the circulation pipe 12.

[0035] Flow rate adjustment units 20 are interposed in each of two branch pipe portions 13 respectively connected to two discharge pipes 4. Each flow rate adjustment unit 20 includes at least an on-off valve, and further includes, as necessary, a flow meter, a flow rate adjustment valve, and the like. The controller 8 performs on / off control of the on-off valve of the flow rate adjustment unit 20, thereby controlling the supply / stop of the processing liquid to the discharge pipe 4. Further, the controller 8 may control the opening degree of the flow rate adjustment valve provided in the flow rate adjustment unit 20 according to the flow rate measured by the flow meter provided in the flow rate adjustment unit 20, thereby controlling the flow rate of the processing liquid supplied to the discharge pipe 4.

[0036] FIG. 2 is a perspective view for explaining a configuration example of the lifter 3. The lifter 3 is moved up and down by a lifter drive mechanism 7 between the processing position shown in FIGS. 1 and 2 and a standby position above the processing tank 2. The processing position is a position where a plurality of substrates W supported by the lifter 3 are located in the internal space of the processing tank 2, and thus are immersed in the processing liquid stored in the processing tank 2. The standby position is a position where a plurality of substrates W supported by the lifter 3 are located outside the processing tank 2, and thus are lifted upward from the processing liquid stored in the processing tank 2.

[0037] In this embodiment, the lifter 3 has a back plate 31, a central holding portion 32, and a pair of side holding portions 33. The back plate 31 is a plate-shaped member extending in the depth direction of the processing tank 2. In this embodiment, it extends vertically along one inner wall of the rectangular parallelepiped-shaped processing tank 2. The central holding portion 32 and the pair of side holding portions 33 respectively extend horizontally from the lower part of the back plate 31 and extend parallel to each other. The central holding portion 32 and the pair of side holding portions 33 are configured to align and support a plurality of substrates W in a predetermined arrangement direction R1 such that the main surfaces of adjacent substrates W face each other with a gap therebetween. In this embodiment, the arrangement direction R1 is the horizontal direction in which the central holding portion 32 and the pair of side holding portions 33 extend. In this embodiment, the central holding portion 32 and the pair of side holding portions 33 are configured to support a plurality of substrates W at equal intervals along the arrangement direction R1. When viewed in the arrangement direction R1, the pair of side holding portions 33 are arranged on both sides with the central holding portion 32 therebetween. The central holding portion 32 supports the lower edge at the center of the substrate W, and the pair of side holding portions 33 support the lower edges on the left and right sides of the substrate W. Thereby, each substrate W is supported in an upright posture (more specifically, an upright posture in which the main surface is along the vertical direction). The plurality of substrates W are supported by the lifter 3 in an upright posture with their main surfaces parallel to each other. In this embodiment, each main surface of the substrate W is substantially perpendicular to the arrangement direction R1.

[0038] FIG. 3A is a plan view showing the arrangement of the discharge pipe 4, and FIG. 3B is a longitudinal sectional view thereof. In FIG. 1, the cross-sectional structure of the processing tank 2 at the cut line I-I of FIG. 3A is shown in a simplified manner, and in FIG. 3B, the longitudinal section of the processing tank 2 at the cut line III-III of FIG. 3A is shown.

[0039] The pair of discharge pipes 4 are arranged at the lower part in the processing tank 2. The pair of discharge pipes 4 are arranged on both sides of the substrate W held and aligned by the lifter 3 when viewed in the arrangement direction R1 (see FIG. 1). Each discharge pipe 4 extends parallel to the arrangement direction R1, the tip portion 4a (one end in the arrangement direction R1) thereof is blocked, and the base end portion (the other end in the arrangement direction R1) serves as an introduction port 4b for the processing liquid, and this introduction port 4b is connected to the tip of the corresponding branch pipe portion 13 of the circulation pipe 12. In this embodiment, the blocked tip portion 4a of the discharge pipe 4 is arranged on the back plate 31 side of the lifter 3, and the introduction port 4b connected to the branch pipe portion 13 is arranged on the side opposite to the back plate 31.

[0040] FIG. 4 is a partial enlarged cross-sectional view showing an enlarged configuration of the discharge pipe 4 shown in FIG. 3B. The discharge pipe 4 has a plurality of discharge holes 41 that open at intervals in the arrangement direction R1. The plurality of discharge holes 41 are aligned along the arrangement direction R1. Among the plurality of discharge holes 41, the plurality of discharge holes 41 arranged in the processing region 40 corresponding to the support positions of the plurality of substrates W by the lifter 3 are arranged at equal intervals. In this embodiment, the interval is equal to the interval (substrate arrangement pitch) between the support positions of the plurality of substrates W by the lifter 3. And in this embodiment, one discharge hole 41 is arranged between adjacent substrates W in the arrangement direction R1.

[0041] For example, when the lifter 3 aligns and supports 50 substrates W in the arrangement direction R1, 51 (number of substrates + 1) or 53 (number of substrates + 2) discharge holes 41 may be arranged at the same interval as the substrates W in the processing region 40. In this embodiment, although the discharge holes 41 are also arranged outside the processing region 40, the processing liquid discharged from the discharge holes 41 in the processing region 40 has a dominant influence on the flow of the processing liquid in the vicinity of the substrate W.

[0042] FIG. 5 shows an example of the flow of the processing liquid in the processing tank 2, and represents the flow of the processing liquid in each part of the processing tank 2 when viewed in the array direction R1. The discharge holes 41 formed in the discharge pipe 4 are provided so as to point to the center of the bottom of the processing tank 2. The bottom of the processing tank 2 has a downward slope from both sides where the pair of discharge pipes 4 are arranged toward the center so that the center is a valley shape that is low when viewed in the array direction R1. The processing liquid discharged from the discharge holes 41 forms a flow of the processing liquid toward the center along the bottom surface of the processing tank 2. The processing liquid discharged from the discharge holes 41 of the pair of discharge pipes 4 hits the bottom surface of the processing tank 2 in front of the center of the bottom surface of the processing tank 2, flows from there toward the center of the bottom surface, and further forms an upward flow that rises from the center of the bottom surface toward the center of the processing tank 2. In addition, the processing liquid that has reached the upper part of the processing tank 2 flows so as to spread to the outside of the processing tank 2, a part of which overflows into the overflow tank 6 (see FIG. 1) and is recovered, and the other part forms a downward flow that descends along the inner wall of the side surface of the processing tank 2. In this way, the flow of the processing liquid along the main surface of the substrate W can be formed in the processing tank 2. Thereby, the processing of the main surface of the substrate W by the processing liquid can be performed while the processing liquid in contact with the main surface of the substrate W is constantly replaced.

[0043] An example of the processing liquid is ozone water. For example, by immersing the substrate W in ozone water, an oxide film (such as a silicon dioxide film or a metal oxide film) can be formed on the main surface of the substrate W. Another example of the processing liquid is an etching liquid such as hydrofluoric acid. By immersing the substrate W in the etching liquid, the main surface of the substrate W can be corroded and etched, or the main surface of the substrate W can be cleaned by light etching. When the substrate W is a silicon wafer, the outermost surface of the main surface of the substrate W may be the surface of the silicon wafer, or may be the surface of a film (oxide film, metal film, etc.) formed on the surface of the silicon wafer. For example, a process of immersing the substrate W in ozone water to supply ozone water to the surface of the substrate W to form an oxide film, and then immersing the substrate W in an etching liquid to remove the oxide film is defined as one cycle, and cycle etching can be performed by repeating this process the number of times (once or more, preferably multiple times) according to the desired etching amount. Thereby, highly accurate etching processing can be performed. Typically, the immersion in ozone water and the immersion in the etching liquid are performed in separate processing tanks.

[0044] The processing tank 2 and the discharge pipe 4 are preferably made of a corrosion-resistant material. Typically, the processing tank 2 and the discharge pipe 4 are made of quartz. By using quartz, in addition to the benefit of corrosion resistance, there are additional benefits such as facilitating the application of ultrasonic vibration to the processing liquid. In addition to quartz, examples of corrosion-resistant materials include PVC (polyvinyl chloride resin), PEEK (polyetheretherketone), PTFE (polytetrafluoroethylene), and PVDF (polyvinylidene fluoride). The discharge hole 41 of the discharge pipe 4 can be formed by drilling, laser processing, ultrasonic processing, or the like.

[0045] FIG. 6A shows a setting example (reference comparison example) of the diameters of a plurality of discharge holes 41 formed in the processing region 40 of the discharge pipe 4. FIG. 6B shows the result of obtaining the average flow velocity of the processing liquid near the main surface of the substrate W by simulation. Specifically, the average flow velocity is the average value of the flow velocities at positions at a distance of half of the substrate arrangement pitch from the main surface of the substrate W, facing the arrangement direction R1 with respect to the main surface of the substrate W. The horizontal axes of FIGS. 6A and 6B represent the positions of a plurality of (here, 50) substrates W supported by the lifter 3. The substrate position "1" represents the substrate position closest to the back plate 31 of the lifter 3, and the substrate position "50" represents the substrate position farthest from the back plate 31 of the lifter 3. The vertical axis of FIG. 6A represents the diameter of each discharge hole 41. The vertical axis of FIG. 6B represents the simulation result of the average flow velocity of the processing liquid near the main surface of the substrate W. Strictly speaking, the positions of the discharge holes 41 are offset by half of the substrate arrangement pitch from each substrate position. However, in FIG. 6A, for convenience, the diameter of the discharge hole 41 closest to each substrate position is represented in association with each substrate position. The simulation was performed assuming a state in which 50 substrates W are supported by the lifter 3. Therefore, the simulation result of FIG. 6B shows the distribution (flow velocity distribution) of the average flow velocity of the processing liquid in the arrangement direction R1 on the main surfaces of a plurality of substrates W.

[0046] As a reference comparison example, it is assumed that the plurality of discharge holes 41 formed in the processing region 40 include only a single type of discharge hole 41 having the same diameter. That is, in the reference comparison example, the diameters of the discharge holes 41 at each substrate position are set along the straight line L0 extending left and right in FIG. 6A. In this example, the diameter is set to 1.1 mm (reference diameter). As shown in FIG. 6B, the simulation result corresponding to this reference comparison example has a maximum at the substrate position near the center of the processing region 40, and becomes a flow velocity distribution C0 (a convex upward flow velocity distribution) that decreases as it approaches the vicinity of the end of the processing region 40. This is hereinafter referred to as the "reference flow velocity distribution C0".

[0047] FIG. 7A shows another setting example (Example 1) of the diameters of a plurality of discharge holes 41 formed in the processing region 40 of the discharge pipe 4. FIG. 7B shows the result of obtaining the average flow velocity of the processing liquid near the main surface of the substrate W by simulation. The illustration and the content of the simulation in FIGS. 7A and 7B are the same as those in FIGS. 6A and 6B.

[0048] In this Example 1, the diameters at each substrate position are set so as to obtain a diameter distribution obtained by vertically inverting the reference flow velocity distribution C0. That is, the plurality of discharge holes 41 arranged in the processing region 40 have a minimum diameter at the substrate position near the center of the processing region 40, and increase as they approach the vicinity of the end of the processing region 40. In FIG. 7A, the diameters of the discharge holes 41 at each substrate position are set along a downwardly convex curve L1 (a quadratic curve). In this example, a diameter smaller than the diameter (reference diameter: straight line L0) in the reference comparative example of FIG. 6A is set in the region near the center of the processing region 40, and a diameter larger than the reference diameter is set in the region near the end of the processing region 40. As shown in FIG. 7B, the simulation result corresponding to this Example 1 shows that the flow velocity near the center of the processing region 40 is suppressed, and the flow velocity is maintained in the region near the end of the processing region 40. As a result, a substantially uniform flow velocity distribution C1 is obtained within the processing region 40.

[0049] FIG. 8A shows another setting example (Example 2) of the diameters of a plurality of discharge holes 41 formed in the processing region 40 of the discharge pipe 4. FIG. 8B shows the result of obtaining the average flow velocity of the processing liquid near the main surface of the substrate W by simulation. The illustration and the content of the simulation in FIGS. 8A and 8B are the same as those in FIGS. 6A and 6B.

[0050] In this Example 2, the diameters at each substrate position are set so as to have a stepped diameter distribution. That is, small diameters are set at a plurality of substrate positions in the central region of the processing region 40, and large diameters are set in the outer regions on both sides of the central region. More specifically, the diameter in the central region is equal to the reference diameter (straight line L0), and the diameter in the outer region is larger than the reference diameter (straight line L0) (for example, it is set to 1.1 times the reference diameter). As shown in FIG. 8B, the simulation results corresponding to this Example 2 show that the flow velocity in the vicinity of the center of the processing region 40 is suppressed, and the flow velocity is maintained in the region near the ends of the processing region 40, resulting in a flow velocity distribution C2 with less variation than the reference flow velocity distribution C0.

[0051] The statistical values of the simulation results of the reference comparative example, Example 1, and Example 2 are shown in Table 1 below.

[0052]

Table 1

[0053] FIG. 9 shows still another setting example (Example 3) of the diameters of the plurality of discharge holes 41 formed in the processing region 40 of the discharge pipe 4. In Example 2, the diameter setting is in two steps, but in this Example 3, the diameter setting is in three steps. In this example, the diameters are set step by step according to the downwardly convex curved diameter setting (curve L1) in Example 1. More specifically, a diameter smaller than the reference diameter (straight line L0) (for example, the reference diameter) is set in the central part of the processing region 40, diameters equal to the reference diameter (straight line L0) are set in two intermediate parts on both sides of the central part, and diameters larger than the reference diameter (straight line L0) are set at the outer ends of each of the two intermediate parts. Even with such a diameter setting, a flow velocity distribution with less variation than the reference flow velocity distribution can be realized. Of course, a diameter setting of four steps or more may be used.

[0054] As described above, in this embodiment, the discharge pipe 4 disposed at the lower part in the treatment tank 2 has a plurality of discharge holes 41 that are open at intervals in the arrangement direction R1 of the substrate W, and the plurality of discharge holes 41 include a plurality of types of discharge holes 41 having different diameters arranged along the arrangement direction R1. Thereby, the variation in the flow velocity of the treatment liquid in the treatment tank 2 with respect to the arrangement direction R1 can be suppressed, and uniform treatment for a plurality of substrates W can be realized.

[0055] The discharge hole 41 is typically circular, and the diameter represents its diameter. However, the discharge hole 41 may be other shapes such as an ellipse or a rectangle. In such a case, the diameter of a circle having an area equal to the opening area of the discharge hole 41 may be regarded as the diameter.

[0056] In the aforementioned Example 1, Example 2, and Example 3, the plurality of types of discharge holes 41 provided in the discharge pipe 4 include a first discharge hole with a first diameter arranged in the central region with respect to the arrangement direction R1, and a second discharge hole with a second diameter larger than the first diameter arranged in a region outside the central region with respect to the arrangement direction R1. And in the aforementioned Example 1 and Example 3, the plurality of types of discharge holes 41 further include a third discharge hole with a third diameter larger than the second diameter arranged in a region outside the region where the second discharge hole is arranged with respect to the arrangement direction R1. In any of Example 1, Example 2, and Example 3, the plurality of types of discharge holes 41 are designed such that the diameter becomes larger from the center to the outside with respect to the arrangement direction R1. With such a configuration, the variation in the flow velocity of the treatment liquid in the treatment tank 2 with respect to the arrangement direction R1 can be effectively suppressed. That is, in any of the aforementioned Example 1, Example 2, and Example 3, compared with the reference flow velocity distribution C0 in the case where the plurality of discharge holes 41 include only a single type of discharge hole with the same diameter, flow velocity distributions C1 and C2 with less variation are achieved. Thus, the treatment of the main surfaces of a plurality of substrates W with the treatment liquid can be performed uniformly.

[0057] This embodiment can also be implemented in a modified form as described below.

[0058] For example, the plurality of discharge holes 41 provided in the processing region 40 do not necessarily have to be provided at equal intervals (i.e., a uniform arrangement density in the arrangement direction R1), and the interval near the end of the processing region 40 may be shortened (i.e., the arrangement density in the arrangement direction R1 may be increased).

[0059] Also, the plurality of discharge holes 41 do not necessarily have to have the same opening shape (e.g., circular), and discharge holes having a plurality of types of opening shapes may be included. For example, a long-hole-shaped discharge hole extending in the arrangement direction R1 may be provided near the end of the processing region 40, thereby achieving an arrangement of discharge holes with a large diameter (opening area).

[0060] Also, not all of the plurality of discharge holes 41 have to have a main discharge direction parallel to the main surface of the substrate W. Some of the discharge holes 41 (e.g., the discharge holes 41 arranged near the end of the processing region 40) may have a main discharge direction inclined with respect to the main surface of the substrate W. The main discharge direction refers to the average discharge direction of the processing liquid discharged from the discharge hole 41.

[0061] Furthermore, in the above-described embodiment, one discharge pipe 4 is arranged on each of the lower sides inside the processing tank 2, and each discharge pipe 4 has a plurality of discharge holes 41 with different diameters. However, in addition to this configuration, a plurality of discharge pipes may be arranged on each of the lower sides inside the processing tank 2, and a configuration may be adopted in which the processing liquid is distributed and supplied to these discharge pipes. For example, in order to set the diameter distribution of Example 2 described above, one central discharge pipe having a plurality of discharge holes with a diameter of 1.1 mm and two outer discharge pipes having a plurality of discharge holes with a diameter of 1.2 mm may be used.

[0062] FIG. 10 is a conceptual diagram for explaining the configuration of a substrate processing apparatus according to a second embodiment of the present invention. This substrate processing apparatus 101 is a batch-type apparatus capable of collectively processing a plurality of substrates W with a processing liquid. In this embodiment, the substrate W is a substantially circular substrate. One typical example of a substantially circular substrate W is a semiconductor wafer.

[0063] The substrate processing apparatus 101 includes a processing tank 102 in which a processing liquid for immersing a plurality of substrates W is stored, a lifter 103 that aligns and supports the plurality of substrates W in a predetermined alignment direction in the processing tank 102, a discharge pipe 104 disposed at the lower part in the processing tank 102, and a processing liquid supply mechanism 105 that supplies the processing liquid to the discharge pipe 104. The substrate processing apparatus 101 further includes an overflow tank 106 that receives the processing liquid overflowing from the upper edge of the processing tank 102. The substrate processing apparatus 101 also includes a lifter drive mechanism 107 that moves the lifter 103 up and down to immerse the plurality of substrates W supported by the lifter 103 in the processing liquid stored in the processing tank 102 or lift the plurality of substrates W from the processing liquid. Further, the substrate processing apparatus 101 includes a controller 108 for controlling the processing liquid supply mechanism 105, the lifter drive mechanism 107, and the like.

[0064] The processing liquid supply mechanism 105 includes a fresh liquid supply pipe 111 that supplies unused processing liquid from a processing liquid supply source 110 to the processing tank 102, and a circulation pipe 112 that constitutes a processing liquid circulation path passing through the processing tank 102. An on-off valve 114 is interposed in the fresh liquid supply pipe 111, and the opening and closing of this on-off valve 114 are controlled by the controller 108. One end of the circulation pipe 112 is connected to the bottom of the overflow tank 106, and the other end side branches into two branch pipe portions 113, and these branch pipe portions 113 are respectively connected to the two discharge pipes 104. A pump 115, an in-line heater 116, and a filter 117 are interposed in the circulation pipe 112 between the branch position from the overflow tank 106 to the branch pipe portions 113. In this embodiment, they are arranged in the direction from the overflow tank 106 toward the discharge pipe 104 in this order of description. The pump 115 and the in-line heater 116 are controlled by the controller 108. The pump 115 sends out the processing liquid from the overflow tank 106 toward the discharge pipe 104. The in-line heater 116 is an example of a temperature regulator that adjusts the temperature of the processing liquid passing through the circulation pipe 112 to an appropriate temperature. The filter 117 removes foreign substances in the processing liquid passing through the circulation pipe 112.

[0065] Flow rate adjustment units 120 are installed in each of the two branch pipe portions 113 respectively connected to the two discharge pipes 104. Each flow rate adjustment unit 120 includes at least an on-off valve, and may further include a flow meter, a flow rate adjustment valve, etc. as required. The controller 108 controls the on-off valve of the flow rate adjustment unit 120 to be on / off, thereby controlling the supply / stop of the processing liquid to the discharge pipe 104. Further, the controller 108 may control the opening degree of the flow rate adjustment valve provided in the flow rate adjustment unit 120 according to the flow rate measured by the flow meter provided in the flow rate adjustment unit 120, thereby controlling the flow rate of the processing liquid supplied to the discharge pipe 104.

[0066] The processing liquid stored in the processing tank 102 is a chemical solution or a rinse solution, typically a chemical solution such as an etching solution. Examples of chemical solutions include dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), fluonitric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, aqueous ammonia, hydrogen peroxide solution, organic acids (e.g., citric acid, oxalic acid), organic alkalis (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid-hydrogen peroxide solution mixture (SPM), ammonia-hydrogen peroxide solution mixture (APM, e.g., SC1), hydrochloric acid-hydrogen peroxide solution mixture (e.g., SC2), isopropyl alcohol (IPA), surfactants, corrosion inhibitors, and hydrophobizing agents.

[0067] The substrate processing using the chemical solution may be an etching process or a cleaning process. As an example, the substrate processing apparatus 101 may execute a process of etching a silicon nitride film (silicon nitride film) formed on the main surface of the substrate W with phosphoric acid.

[0068] FIG. 11 is a perspective view for explaining a configuration example of the lifter 103. The lifter 103 is moved up and down by a lifter drive mechanism 107 between the processing position shown in FIGS. 10 and 11 and a standby position above the processing tank 102. The processing position is a position where a plurality of substrates W supported by the lifter 103 are located in the internal space of the processing tank 102, and thus are immersed in the processing liquid stored in the processing tank 102. The standby position is a position where a plurality of substrates W supported by the lifter 103 are located outside the processing tank 102, and thus are lifted upward from the processing liquid stored in the processing tank 102.

[0069] In this embodiment, the lifter 103 includes a back plate 131, a central holding portion 132, and a pair of side holding portions 133. The back plate 131 is a plate-like member extending in the depth direction of the processing tank 102, and in this embodiment, it extends vertically along one inner wall of the rectangular parallelepiped processing tank 102. The central holding portion 132 and the pair of side holding portions 133 respectively extend horizontally from the lower part of the back plate 131 and extend parallel to each other. The central holding portion 132 and the pair of side holding portions 133 are configured to support a plurality of substrates W so as to be aligned in a predetermined arrangement direction R11 such that the main surfaces of adjacent substrates W face each other with a gap therebetween. The arrangement direction R11 is, in this embodiment, the horizontal direction in which the central holding portion 132 and the pair of side holding portions 133 extend. In this embodiment, the central holding portion 132 and the pair of side holding portions 133 are configured to support a plurality of substrates W at equal intervals along the arrangement direction R11. When viewed in the arrangement direction R11, the pair of side holding portions 133 are arranged on both sides with the central holding portion 132 interposed therebetween. The central holding portion 132 supports the central lower edge of the substrate W, and the pair of side holding portions 133 support the lower edges on the left and right sides of the substrate W. Thereby, each substrate W is supported in an upright posture (more specifically, an upright posture in which the main surface is along the vertical direction). The plurality of substrates W are supported by the lifter 103 in an upright posture with their main surfaces parallel to each other. In this embodiment, each main surface of the substrate W is substantially perpendicular to the arrangement direction R11.

[0070] FIG. 12 is a longitudinal sectional view showing the arrangement of the discharge pipes 104. In FIG. 10, the cross-sectional structure of the processing tank 102 at the cutting plane line X-X of FIG. 12 is shown in a simplified manner.

[0071] A pair of discharge pipes 104 are arranged at the lower part inside the processing tank 102. When viewed in the arrangement direction R11 (see FIG. 10), the pair of discharge pipes 104 are arranged on both the left and right sides with respect to the center of the substrate W below the substrate W held and aligned by the lifter 103 arranged at the processing position. Each discharge pipe 104 extends parallel to the arrangement direction R11, the tip end portion 104a (one end in the arrangement direction R11) thereof is blocked, and the base end portion (the other end in the arrangement direction R11) serves as the introduction port 104b for the processing liquid, and this introduction port 104b is coupled to the tip end of the corresponding branch pipe portion 113 of the circulation pipe 112. In this embodiment, the blocked tip end portion 104a of the discharge pipe 104 is arranged on the back plate 131 side of the lifter 103, and the introduction port 104b coupled to the branch pipe portion 113 is arranged on the side opposite to the back plate 131.

[0072] FIG. 13 is a partially enlarged sectional view showing the configuration of the discharge pipe 104 shown in FIG. 12 in an enlarged manner. The discharge pipe 104 has a plurality of discharge holes 141 that are opened at intervals in the arrangement direction R11. The plurality of discharge holes 141 are aligned along the arrangement direction R11. Among the plurality of discharge holes 141, the plurality of discharge holes 141 arranged in the processing region 140 corresponding to the support positions of the plurality of substrates W by the lifter 103 are arranged at equal intervals. In this embodiment, the interval is equal to the interval (substrate arrangement pitch) between the support positions of the plurality of substrates W by the lifter 103. And in this embodiment, one discharge hole 141 is arranged between adjacent substrates W with respect to the arrangement direction R11.

[0073] For example, when the lifter 103 aligns and supports 50 substrates W in the array direction R11, 51 (number of substrates + 1) or 53 (number of substrates + 2) discharge holes 141 may be arranged at the same interval as the substrate W in the processing region 140. In this embodiment, discharge holes 141 are also arranged outside the processing region 140. For example, 68 discharge holes 141 are formed in each discharge pipe 104 and aligned in the array direction R11. However, the processing liquid discharged from the discharge holes 141 in the processing region 140 has a dominant influence on the flow of the processing liquid in the vicinity of the substrate W.

[0074] FIG. 14 shows an example of the flow of the processing liquid in the processing tank 102 and represents the flow of the processing liquid in each part of the processing tank 102 when viewed in the array direction R11. The discharge holes 141 formed in the discharge pipes 104 are provided so as to point to the central region of the processing tank 102 when viewed in the array direction R11. In other words, the discharge holes 141 are provided in the discharge pipes 104 so as to point to the central region of the substrate W held by the lifter 103. More specifically, the direction in which each discharge hole 141 points, that is, the main discharge direction, is a direction toward the central region of the main surface of the substrate W within a plane parallel to the main surface of the substrate W (a plane orthogonal to the array direction R11) held by the lifter 103 arranged at the processing position. The central region of the main surface of the substrate W is a region that includes the center of gravity of the substrate W and does not include the peripheral region, and may be, for example, a region within a circle having a radius of about half of the substrate W centered on the center of gravity of the substrate W.

[0075] In this embodiment, a pair of discharge pipes 104 are arranged on both sides of a plurality of substrates W when viewed in the arrangement direction R11. Therefore, the plurality of discharge holes 141 formed in each discharge pipe 104 are arranged offset to the left and right of the center of the processing tank 102 in the width direction of the processing tank 102 (referring to the horizontal direction orthogonal to the arrangement direction R11). Therefore, the main discharge direction of each discharge hole 141 is obliquely upward toward the center in the width direction of the processing tank 102, and more specifically, it is a direction toward the center in the width direction as it goes upward. In this way, it is designed such that a flow of the processing liquid from the plurality of discharge holes 141 of the pair of discharge pipes 104 toward the central region of the substrate W is formed. In this embodiment, the main discharge direction of each discharge hole 141 is directed slightly downward from the center (center of gravity position) of the substrate W held by the lifter 103 arranged at the processing position, and it is designed such that the processing liquid flows from the discharge holes 141 of the left and right discharge pipes 104 slightly below the center of the substrate W and merge to form an upward flow directed upward.

[0076] The processing liquid that has reached the upper part of the processing tank 102 flows so as to spread outside the processing tank 102, and a part of it overflows into the overflow tank 106 (see FIG. 10) and is recovered, and the other part forms a downward flow that descends along the inner wall on the side of the processing tank 102. In this way, a flow of the processing liquid along the main surface of the substrate W can be formed within the processing tank 102. Thereby, while the processing liquid in contact with the main surface of the substrate W is constantly replaced, the processing of the main surface of the substrate W by the processing liquid can be performed.

[0077] The processing tank 102 and the discharge pipes 104 are preferably made of a corrosion-resistant material. Typically, the processing tank 102 and the discharge pipes 104 are made of quartz. By using quartz, in addition to the benefit of corrosion resistance, there are additional benefits such as it becoming easier to apply ultrasonic vibration to the processing liquid. In addition to quartz, examples of corrosion-resistant materials include PVC (polyvinyl chloride resin), PEEK (polyetheretherketone), PTFE (polytetrafluoroethylene), and PVDF (polyvinylidene fluoride). The discharge holes 141 of the discharge pipes 104 can be formed by drilling, laser processing, ultrasonic processing, or the like.

[0078] One typical example of the processing liquid is phosphoric acid. For example, by immersing the substrate W in phosphoric acid, the nitride film (for example, silicon nitride film) formed on the main surface of the substrate W can be etched.

[0079] FIG. 15 is a graph showing the characteristics of the etching rate (angstroms / min) of a silicon nitride film (Si3N4) with respect to the concentration (%) and temperature (° C) of phosphoric acid (H3PO4). The broken line is a characteristic line representing the variation of the boiling point with respect to the concentration of phosphoric acid. In the etching of the silicon nitride film with phosphoric acid, the temperature of the phosphoric acid has a greater influence on the etching rate than the phosphoric acid concentration. More specifically, when the concentration of phosphoric acid is constant, a high etching rate can be achieved if the temperature of the phosphoric acid can be maintained near the boiling point.

[0080] In addition to phosphoric acid, an ammonia hydrogen peroxide water mixture and TMAH are chemicals (etching solutions) with a high temperature dependence of the etching rate. The ammonia hydrogen peroxide water mixture is used, for example, for particle removal (so-called RCA cleaning). Also, TMAH is used, for example, for removing organic substances and developing resists.

[0081] When etching the silicon nitride on the substrate W with phosphoric acid, for example, the temperature of the phosphoric acid (processing liquid) is controlled to be 150° C to 170° C (more specifically, about 160° C) in the processing tank 102. When removing particles on the substrate W with the ammonia hydrogen peroxide water mixture, for example, the temperature of the ammonia hydrogen peroxide water mixture (processing liquid) is controlled to be 40° C to 65° C in the processing tank 102. When removing organic substances on the substrate W with TMAH, for example, the temperature of TMAH (processing liquid) is controlled to be 65° C to 80° C in the processing tank 102.

[0082] Generally, the greater the difference from room temperature, the more stringent the temperature control conditions become. Room temperature refers to the environmental temperature of the space where the processing apparatus for processing the substrate W is located. More specifically, it is the air temperature in the clean room of a semiconductor device manufacturing factory. A typical range of room temperature is from 0°C to 30°C, and more specifically, for example, 20 - 30°C (for example, 23°C). Therefore, among the treatments with phosphoric acid, a mixed solution of ammonia hydrogen peroxide water, and TMAH, the etching treatment with phosphoric acid has the most stringent conditions from the perspective of temperature control.

[0083] FIG. 16 shows an example of the etching rate when the silicon nitride film on the surface of the substrate W is etched with phosphoric acid. However, this example is an example of the etching rate (comparative example) when the diameter of all the discharge holes 141 of the discharge pipe 104 is 1 mm. The horizontal axis represents the positions of a plurality of (here, 50) substrates W supported by the lifter 103. The substrate position "1" represents the substrate position closest to the back plate 131 of the lifter 103 (that is, closest to the tip 104a of the discharge pipe 104), and the substrate position "50" represents the substrate position farthest from the back plate 131 of the lifter 103 (that is, closest to the introduction port 104b of the discharge pipe 104). It can be seen that there is a difference in the etching rate depending on the substrate position, and the etching rate tends to decrease from the tip 104a side to the introduction port 104b side of the discharge pipe 104.

[0084] Regarding the above comparative example, when the average flow rate of the processing liquid near the main surface of the substrate W at each substrate position was obtained by simulation, no significant difference was found that seemed to affect the etching rate.

[0085] On the other hand, for the above comparative example, as shown in FIGS. 17A and 17B, when the flow rate (mass flow rate; hereinafter referred to as "discharge flow rate") and the flow velocity (hereinafter referred to as "discharge flow velocity") of the processing liquid discharged from the discharge holes 141 of the discharge pipe 104 were examined by simulation, a difference corresponding to the position in the arrangement direction R11 of the discharge holes 141 was found. FIG. 17A shows the discharge flow rate (kg / sec), and FIG. 17B shows the discharge flow velocity (m / sec). The horizontal axes of FIGS. 17A and 17B represent the positions of a plurality of discharge holes 141 arranged at equal intervals in the arrangement direction R11 (positions with respect to the arrangement direction R11). The discharge hole position "1" corresponds to the discharge hole 141 closest to the back plate 131 of the lifter 103 (i.e., closest to the tip portion 104a of the discharge pipe 104), and the discharge hole position "68" corresponds to the discharge hole 141 farthest from the back plate 131 of the lifter 103 (i.e., closest to the introduction port 104b of the discharge pipe 104). Since no significant difference was observed between the left and right discharge pipes 104, FIGS. 17A and 17B show only the simulation results for the discharge holes 141 of the discharge pipe 104 drawn on the right side in FIG. 10. The same applies to FIGS. 18A and 18B described later.

[0086] From FIGS. 17A and 17B, it can be seen that there are differences in the discharge flow rate and the discharge flow velocity depending on the discharge hole position, and the discharge flow rate tends to decrease and the discharge flow velocity tends to decrease as going from the tip portion 104a of the discharge pipe 104 toward the introduction port 104b side. From this, it can be inferred that the differences in the discharge flow rate and the discharge flow velocity corresponding to the discharge hole position affect the differences in the etching rate corresponding to the substrate position.

[0087] The simulation results of the discharge flow rate and the discharge flow velocity in the case (Example) where the diameters of the discharge holes 141 at the discharge hole positions "1" to "44" are 1 mm and the diameters of the discharge holes 141 at the discharge hole positions "45" to "68" are 1.3 mm are shown in FIGS. 18A and 18B.

[0088] The discharge flow rate and the discharge flow velocity both increase at the position where the diameter of the discharge hole 141 changes. Also, within each of the ranges of discharge hole positions "1" to "44" and "45" to "68", the discharge flow rate tends to decrease and the discharge flow velocity tends to decrease as the discharge hole position increases.

[0089] However, as shown in Fig. 18A, the distribution ranges of the discharge flow rate are relatively separated between the range of discharge hole positions "1" to "44" and the range of discharge hole positions "45" to "68", and there is no overlapping region. On the other hand, as shown in Fig. 18B, the distribution ranges of the discharge flow velocity overlap between the range of discharge hole positions "1" to "44" and the range of discharge hole positions "45" to "68", and the discharge flow velocity distribution range in the range of discharge hole positions "1" to "44" encompasses almost all of the discharge flow velocity distribution range in the range of discharge hole positions "45" to "68". That is, even when using the discharge pipe 104 provided with two types of discharge holes 141 having different diameters, there is no significant influence on the uniformity (variation) of the discharge flow velocity.

[0090] Also, as shown in Fig. 18B, in the range of discharge hole positions "1" to "44", the highest flow velocity is at the discharge hole position "1", and in the range of discharge hole positions "45" to "68", the highest flow velocity is at the discharge hole position "45", and the highest flow velocities in these two ranges are approximately equal. Also, the tendency for the flow velocity to decrease with an increase in the discharge hole position is generally the same between the range of discharge hole positions "1" to "44" and the range of discharge hole positions "45" to "68". That is, it can be said that the change in the flow velocity with respect to the discharge hole position in the range of discharge hole positions "1" to "44" and the range of discharge hole positions "45" to "68" is generally the same.

[0091] Therefore, next, the uniformity (variation) of the discharge flow rate will be examined.

[0092] The relationship between the discharge flow rate (kg / sec) and the discharge flow velocity (m / sec) can be expressed by the following equation using the density ρ (kg / m 3 ) of the processing liquid and the opening area A (m 2 ) of the discharge hole 141.

[0093] Discharge flow rate = ρ × A × Discharge velocity Consider the case where the diameters of the N discharge holes 141 at the discharge hole positions "1" to "N" (N is a natural number of 67 or less) are set to 1 mm, which is the reference diameter, and the diameters of the (68 - N) discharge holes 141 at the discharge hole positions "N + 1" to "68" are set to d (mm).

[0094] The ratio (hole number ratio) of the number N of discharge holes 141 with a diameter of 1 mm (reference diameter) to the total number "68" of the discharge holes 141 is N / 68. On the other hand, the ratio (hole number ratio) of the number (68 - N) of discharge holes 141 with a diameter of d (mm) to the total number "68" of the discharge holes 141 is (68 - N) / 68.

[0095] The ratio (hole area ratio) of the opening area of the discharge hole 141 with a reference diameter of 1 mm (here 1 mm) to the opening area of the discharge hole 141 is (1 / 1) 2 = 1. On the other hand, the ratio (hole area ratio) of the opening area of the discharge hole 141 with a diameter of d (mm) to the opening area of the discharge hole 141 with a reference diameter of 1 mm (here 1 mm) is (d / 1) 2 = d 2 is.

[0096] Then, the ratio of the sum of the opening areas of the N discharge holes 141 with the reference diameter (total opening area) to the sum of the opening areas of all the discharge holes 141 when all the discharge holes 141 have the reference diameter (1 mm) (reference total opening area) is 1 × (N / 68) = N / 68. Similarly, the ratio of the sum of the opening areas of the 68 - N discharge holes 141 with a diameter of d (mm) (total opening area) to the reference total opening area is d 2 × ((68 - N) / 68) = d 2 × (68 - N) / 68. By adding these, the ratio (overall total opening area ratio) of the total opening area of all the discharge holes 141 to the reference total opening area is obtained. That is, the overall total opening area ratio = N / 68 + d 2 × (68 - N) / 68 = {N + d 2 (68 - N)} / 68.

[0097] If the flow rate of the processing liquid flowing into the discharge pipe 104 is constant, the average value of the discharge flow velocities of all the discharge holes 141 in the reference discharge pipe 104 with all the discharge holes 141 having a reference diameter (1 mm) (average discharge flow velocity) is equal to the average discharge flow velocity in the improved discharge pipe 104 provided with (68 - N) discharge holes 141 having a diameter d (mm) and N discharge holes 141 having a reference diameter (1 mm). Therefore, if the reciprocal of the total opening area ratio is defined as the correction coefficient C (= 68 / {N + d 2 (68 - N)}), the discharge flow velocity of the discharge hole 141 having a reference diameter (1 mm) at the discharge hole position "1" in the improved discharge pipe 104 can be obtained by multiplying the discharge flow velocity of the discharge hole 141 having a reference diameter (1 mm) at the discharge hole position "1" in the reference discharge pipe 104 by the correction coefficient C. Since all the diameters are the reference diameter (1 mm), the ratio of the discharge flow velocities directly becomes the ratio of the discharge flow rates. Therefore, the discharge flow rate of the discharge hole 141 having a reference diameter (1 mm) at the discharge hole position "1" in the improved discharge pipe 104 can be obtained by multiplying the discharge flow rate of the discharge hole 141 having a reference diameter (1 mm) at the discharge hole position "1" in the reference discharge pipe 104 by the correction coefficient C.

[0098] The hole area ratio of the discharge hole 141 at the discharge hole position "N + 1" in the improved discharge pipe 104 is d 2 . Therefore, the discharge flow rate of the discharge hole 141 at the discharge hole position "N + 1" can be obtained by multiplying the discharge flow rate of the discharge hole 141 having a reference diameter (1 mm) at the discharge hole position "1" in the reference discharge pipe 104 by the correction coefficient C and then multiplying this by the hole area ratio d 2 . That is, it can be obtained by multiplying the discharge flow rate of the discharge hole 141 at the discharge hole position "1" in the improved discharge pipe 104 by the hole area ratio d 2 .

[0099] As an example of the improved discharge pipe 104, when the number N of discharge holes 141 having a reference diameter (1 mm) is 24 and the diameters d of the 44 (= 68 - 24) discharge holes 141 at the discharge hole positions "25" to "68" are 1.005 mm, the following is the case. Note that the discharge flow rate of the discharge hole 141 having a reference diameter (1 mm) at the discharge hole position "1" in the reference discharge pipe 104 is 0.0053777 (see Fig. 17A) Hole number ratio of discharge holes 141 with a reference diameter (1 mm): N / 68 = 0.352941 Hole number ratio of discharge holes 141 with a diameter d = 1.005 mm: (68 - N) / 68 = 0.647059 Ratio of hole areas of discharge holes 141 with a reference diameter (1 mm): 1 Ratio of hole areas of discharge holes 141 with a diameter d = 1.005 mm: d 2 = 1.010025 Ratio of total opening areas of discharge holes 141 with a reference diameter (1 mm): N / 68 = 0.35294176 Ratio of total opening areas of discharge holes 141 with a diameter d = 1.005 mm: d 2 ×(68 - N) / 68 = 0.653545588 Correction coefficient C: 68 / (0.35294176 + 0.653545588) = 0.993555 Discharge flow rate of discharge holes 141 at discharge hole position "1": 0.0053777 × 0.99355 = 0.00534304 Discharge flow rate of discharge holes 141 at discharge hole position "25": 0.00534304 × 1.010025 = 0.0053966 Figure 19 is a diagram showing the relationship between the discharge hole position and the discharge flow rate in the reference discharge pipe 104 shown in Figure 17A, with the data normalized with the discharge flow rate at discharge hole position "1" set to 1 plotted. Curve L19 is an approximate curve. In this example, with the normalized discharge flow rate y on the vertical axis and the discharge hole position x on the horizontal axis, it is represented by the following equation.

[0100] y = 3×10 -6 x 2 -0.0008x + 1.0041 When applying to the previous example, i.e., when the number N of discharge holes 141 with a reference diameter (1 mm) is 24, and the diameter d of 44 (= 68 - 24) discharge holes 141 at the discharge hole positions "25" to "68" is 1.005 mm, the coefficient α (constant) determined such that αy = 0.00534304 when x = 1 is used. Then, by obtaining the values of αy for x = 1 to 24, the discharge flow rates corresponding to the discharge hole positions "1" to "24" can be obtained. Further, when obtaining the discharge flow rates at the discharge hole positions "25" to "68", the above formula is transformed as follows.

[0101] y = 3×10 -6 (x - 24) 2 -0.0008(x - 24) + 1.0041 Then, the coefficient β (constant) determined such that βy = 0.0053966 when x = 25 is used. Then, by obtaining the values of βy for x = 25 to 68, the discharge flow rates corresponding to the discharge hole positions "25" to "68" can be obtained.

[0102] An example of the calculation results is shown in the following table.

[0103]

Table 2

[0104] Discharge flow rate uniformity (%) = (Fmax - Fmin) / Fave / 2×100 For the discharge pipe 104 provided with two types of discharge holes 141, i.e., the discharge holes 141 with a reference diameter (1 mm) and the discharge holes 141 with a diameter d (mm), calculations as shown in Table 2 were performed, and the results of examining the discharge flow rate uniformity are shown in Fig. 20.

[0105] Curve L201 shows the discharge flow rate uniformity when discharge holes 141 with a reference diameter (1 mm) are arranged at discharge hole positions "1" to "24", and discharge holes 141 with a diameter d (mm) are arranged at discharge positions "25" to "68". The plots at d = 1 represent the discharge flow rate uniformity in a reference discharge pipe with discharge holes of the reference diameter (1 mm) arranged at all discharge hole positions "1" to "68", which is 2% here. The plots at d = 1.005 correspond to the example in Table 2, and the discharge flow rate uniformity is about 1.45%, which is improved compared to the case of the reference discharge pipe. In the range of 0.993 mm ≤ d ≤ 1.01 mm, a discharge flow rate uniformity of less than 2% is achieved, and there is a possibility that a discharge flow rate uniformity of less than 2% can also be achieved with a diameter d exceeding 1.01 mm.

[0106] Curve L202 shows the discharge flow rate uniformity when discharge holes 141 with a reference diameter (1 mm) are arranged at discharge hole positions "1" to "35", and discharge holes 141 with a diameter d (mm) are arranged at discharge positions "36" to "68". In the range of 0.991 mm ≤ d ≤ 1.009 mm, a discharge flow rate uniformity of less than 2% is achieved.

[0107] Curve L203 shows the discharge flow rate uniformity when discharge holes 141 with a reference diameter (1 mm) are arranged at discharge hole positions "1" to "44", and discharge holes 141 with a diameter d (mm) are arranged at discharge positions "45" to "68". In the range of 0.99 mm ≤ d ≤ 1.007 mm, a discharge flow rate uniformity of less than 2% is achieved, and there is a possibility that a discharge flow rate uniformity of less than 2% can also be achieved with a diameter d less than 0.99 mm.

[0108] It can be seen from curves L201 to L203 that by determining the diameter d in the range of 0.99 mm ≤ d ≤ 1.01 mm and appropriately selecting the discharge hole position where the reference diameter (1 mm) and a different diameter d are switched, a discharge flow rate uniformity of less than 2% can be achieved.

[0109] FIG. 21A shows the results of examining the discharge flow rate uniformity and the discharge flow velocity uniformity when discharge holes 141 with a reference diameter (1 mm) are arranged at discharge hole positions "1" to "44" and discharge holes 141 with a diameter d (mm) are arranged at discharge positions "45" to "68" for a wider range of the diameter d (mm). Curve L211 represents the discharge flow rate uniformity, and curve L212 represents the discharge flow velocity uniformity.

[0110] The discharge flow velocity uniformity is the uniformity (variation) of the discharge flow velocity. It can be expressed as the percentage of half of the difference (Vmax - Vmin) between the maximum discharge flow velocity Vmax and the minimum discharge flow velocity Vmin in the entire range of the discharge hole positions divided by the average discharge flow velocity Vave, as shown in the following equation.

[0111] Discharge flow velocity uniformity (%) = (Vmax - Vmin) / Vave / 2 × 100 When viewed macroscopically in the wide range of the diameter d (mm) from 0.7 mm to 1.3 mm, the discharge flow rate uniformity increases proportionally as the diameter d (mm) deviates from the reference diameter (1 mm). On the other hand, the discharge flow velocity uniformity is almost constant regardless of the diameter d (mm).

[0112] FIG. 21B shows an enlarged view of the region near d = 1 mm in FIG. 21A. When d = 1 mm, that is, when the discharge hole diameters at discharge hole positions "1" to "68" are all 1 mm (reference diameter), both the discharge flow rate uniformity and the discharge flow velocity uniformity are about 2%. And on both sides of d = 1 mm, the discharge flow rate uniformity and the discharge flow velocity uniformity decrease rapidly. The discharge flow velocity uniformity decreases rapidly as the diameter d deviates from 1 mm and stabilizes at about 1.4%. On the other hand, the discharge flow rate uniformity decreases rapidly after the diameter d deviates from 1 mm and then turns to increase. As described for curve L203 in FIG. 20, a discharge flow rate uniformity of less than 2% is achieved in the range of 0.99 mm ≤ d ≤ 1.007 mm, and a discharge flow rate uniformity of less than 2% is also achieved for a diameter d less than 0.99 mm (for example, d ≥ 0.987).

[0113] Figures 22A and 22B respectively show the relationship between the discharge hole positions and the discharge flow rate and discharge flow velocity when discharge holes with a reference diameter (1 mm) are arranged at the discharge hole positions "1" to "44" and discharge holes with a diameter d = 0.99 mm are arranged at the discharge positions "45" to "68". Figure 22A corresponds to the plot P22A in the curve L203 of FIG. 20 representing the flow rate uniformity.

[0114] In both the discharge flow rate and the discharge flow velocity, it can be seen that a discontinuity occurs at the discharge hole position "45" where the diameter changes, and the discharge flow rate and the discharge flow velocity increase rapidly. As a result, a part of the distribution range of the discharge flow rate in the section of the discharge hole positions "1" to "44" overlaps with the distribution range of the discharge flow rate in the section of the discharge positions "45" to "68". The larger the overlapping part, the smaller the difference (Fmax - Fmin) between the maximum discharge flow rate Fmax and the minimum discharge flow rate Fmin, and accordingly, the smaller the discharge flow rate uniformity. Also, a part of the distribution range of the discharge flow velocity in the section of the discharge hole positions "1" to "44" overlaps with the distribution range of the discharge flow velocity in the section of the discharge positions "45" to "68". The larger the overlapping part, the smaller the difference (Vmax - Vmin) between the maximum discharge flow velocity Vmax and the minimum discharge flow velocity Vmin, and accordingly, the smaller the discharge flow velocity uniformity. In this example, the distribution range of the discharge flow velocity in the section of the discharge hole positions "1" to "44" encompasses the entire distribution range of the discharge flow velocity in the section of the discharge positions "45" to "68".

[0115] FIG. 23A shows the relationship between the discharge hole position and the discharge flow rate when discharge holes 141 with a reference diameter (1 mm) are arranged at the discharge hole positions "1" to "44" and discharge holes 141 with a diameter d = 0.995 mm are arranged at the discharge positions "45" to "68". FIG. 23B shows the relationship between the discharge hole position and the discharge flow rate when discharge holes 141 with a reference diameter (1 mm) are arranged at the discharge hole positions "1" to "44" and discharge holes 141 with a diameter d = 1.005 mm are arranged at the discharge positions "45" to "68". FIG. 23C shows the relationship between the discharge hole position and the discharge flow rate when discharge holes 141 with a reference diameter (1 mm) are arranged at the discharge hole positions "1" to "44" and discharge holes 141 with a diameter d = 1.01 mm are arranged at the discharge positions "45" to "68". FIGS. 23A, 23B, and 23C respectively correspond to the plots P23A, P23B, and P23C on the curve L203 in FIG. 20 showing the flow rate uniformity.

[0116] In the cases shown in FIGS. 22A, 23A, and 23B respectively, part of the distribution range of the discharge flow rate in the section of the discharge hole positions "1" to "44" and the distribution range of the discharge flow rate in the section of the discharge positions "45" to "68" overlap. Accordingly, the discharge flow rate uniformity is less than 2%. In the cases shown in FIGS. 23A and 23B respectively, the distribution range of the discharge flow rate in the section of the discharge hole positions "1" to "44" overlaps with 30% or more of the distribution range of the discharge flow rate in the section of the discharge positions "45" to "68". Also, in the case shown in FIG. 23A, the distribution range of the discharge flow rate in the section of the discharge hole positions "1" to "44" encompasses the entire distribution range of the discharge flow rate in the section of the discharge positions "45" to "68", and accordingly, a discharge flow rate uniformity of less than 1.5% is achieved. In the case shown in FIG. 23C, there is no overlapping region between the distribution range of the discharge flow rate in the section of the discharge hole positions "1" to "44" and the distribution range of the discharge flow rate in the section of the discharge positions "45" to "68", and accordingly, the discharge flow rate uniformity exceeds 2%.

[0117] FIG. 24A shows the relationship between the discharge hole positions and the discharge flow rates when discharge holes 141 with a reference diameter (1 mm) are arranged at the discharge hole positions "1" to "26", discharge holes 141 with a diameter d = 0.995 mm are arranged at the discharge hole positions "27" to "45", and discharge holes 141 with a diameter d = 0.99 mm are arranged at the discharge positions "46" to "68". FIG. 24B shows the relationship between the discharge hole positions and the discharge flow rates when discharge holes 141 with a reference diameter (1 mm) are arranged at the discharge hole positions "1" to "26", discharge holes 141 with a diameter d = 1.005 mm are arranged at the discharge hole positions "27" to "45", and discharge holes 141 with a diameter d = 1.01 mm are arranged at the discharge positions "46" to "68".

[0118] In any case, the distribution range of the discharge flow rates at the discharge hole positions "1" to "26" and the distribution range of the discharge flow rates at the discharge hole positions "27" to "45" partially overlap, and the distribution range of the discharge flow rates at the discharge hole positions "27" to "45" and the distribution range of the discharge flow rates at the discharge positions "46" to "68" partially overlap. Thereby, the discharge flow rate uniformity can be improved compared to the case where only one type of discharge hole with a diameter (for example, 1 mm which is the reference diameter) is arranged.

[0119] On the other hand, compared with the case of using discharge holes 141 of two types of diameters (see FIGS. 22A, 23A, 23B, etc.), no significant improvement can be expected from the viewpoint of discharge flow rate uniformity. Therefore, from the viewpoints of the cost and labor required for the processing process of the discharge holes 141, etc., it is more advantageous to use the discharge pipe 104 in which discharge holes 141 of two types of diameters are arranged.

[0120] As described above, in this embodiment, the discharge pipe 104 arranged at the lower part in the processing tank 102 has a plurality of discharge holes 141 that are opened at intervals in the arrangement direction R11 of the substrate W, and the plurality of discharge holes 141 include a plurality of types of discharge holes 141 with different diameters arranged along the arrangement direction R11. Thereby, the variation in the discharge flow velocity and / or the discharge flow rate at the plurality of discharge holes 141 can be suppressed, and uniform processing for a plurality of substrates W can be realized.

[0121] The ejection hole 141 is typically circular, and the aperture diameter represents its diameter. However, the ejection hole 141 may have other shapes such as an ellipse or a rectangle. In such cases, the diameter of a circle with an area equal to the opening area of the ejection hole 141 may be regarded as the aperture diameter.

[0122] In this embodiment, the plurality of ejection holes 141 includes a first ejection hole group composed of a plurality of first ejection holes having a first aperture diameter and continuous in the arrangement direction R11, and a second ejection hole group composed of second ejection holes having a second aperture diameter different from the first aperture diameter and continuous in the arrangement direction R11. In the examples of FIGS. 22A, 22B, 23A, 23B, and 23C, the ejection holes 141 in the section of ejection hole positions "1" to "44" correspond to the first ejection hole group, and the ejection holes 141 in the section of ejection hole positions "45" to "68" correspond to the second ejection hole group. With this configuration, variations in the ejection flow rate and / or ejection flow volume of the plurality of ejection holes 141 can be suppressed. A third ejection hole group composed of third ejection holes having a third aperture diameter different from the first and second aperture diameters and continuous in the arrangement direction R11 may be further provided. In the examples of FIGS. 24A and 24B, the ejection holes 141 in the section of ejection hole positions "1" to "26" correspond to the first ejection hole group, the ejection holes 141 in the section of ejection hole positions "27" to "44" correspond to the second ejection hole group, and the ejection holes 141 in the section of ejection hole positions "45" to "68" correspond to the third ejection hole group.

[0123] In the examples of FIGS. 22A, 22B, 23A, 23B, 24A, and 24B, the distribution range of the ejection flow volume of the plurality of ejection holes 141 (first ejection holes) constituting the first ejection hole group and the distribution range of the ejection flow volume of the plurality of ejection holes 141 (second ejection holes) constituting the second ejection hole group have an overlapping region. Thereby, variations in the ejection flow volume can be suppressed, and uniform processing for a plurality of substrates W can be realized.

[0124] In the examples of FIGS. 22A, 22B, 23A, 23B, 24A, and 24B, the distribution range of the discharge flow rates of the plurality of discharge holes 141 (first discharge holes) constituting the first discharge hole group overlaps with 30% or more of the distribution range of the discharge flow rates of the plurality of discharge holes 141 (second discharge holes) constituting the second discharge hole group. Thereby, the variation in the discharge flow rate can be further suppressed, so that uniform processing for a plurality of substrates W can be realized.

[0125] In the examples of FIGS. 22B and 23A, the distribution range of the discharge flow rates of the plurality of discharge holes 141 (first discharge holes) constituting the first discharge hole group includes the entire distribution range of the discharge flow rates of the plurality of discharge holes 141 (second discharge holes) constituting the second discharge hole group. Thereby, the variation in the discharge flow rate can be further suppressed, so that uniform processing for a plurality of substrates W can be realized.

[0126] As described above, when the first diameter (reference diameter) is 1 mm and the second diameter (diameter d) is 0.99 mm or more and 1.01 mm or less, a discharge flow rate uniformity of less than 2% can be realized. In other words, when the second diameter (diameter d) is 99% or more and 101% or less of the first diameter (reference diameter), a discharge flow rate uniformity of less than 2% can be realized. Further in other words, when the diameters of the plurality of types of discharge holes 141 differ within a range of ±1%, a discharge flow rate uniformity of less than 2% can be realized.

[0127] By designing the diameters and the like of the plurality of discharge holes 141 such that the uniformity (variation) of the discharge flow rate of the processing liquid from the plurality of discharge holes 141 becomes less than 2% in this way, uniform processing can be performed on a plurality of substrates W.

[0128] As described above, since no significant improvement can be expected even if three or more types of diameters are set, if the plurality of types of discharge holes are two types of discharge holes with different diameters, the manufacturing cost can be reduced and the cost effectiveness can be increased.

[0129] In particular, when the processing liquid is discharged from the discharge holes 141 at a temperature of 40°C or higher and 170°C or lower, by making the discharge flow velocity and / or discharge flow rate of the plurality of discharge holes 141 uniform, variations in the temperature on the main surfaces of the plurality of substrates W can be suppressed, and uniform processing of the plurality of substrates W can be realized.

[0130] Typical examples of such a processing liquid include one or more of phosphoric acid, an ammonia hydrogen peroxide aqueous solution, and TMAH (tetramethylammonium hydroxide).

[0131] In this embodiment, the processing liquid is configured to flow from the plurality of discharge holes 141 of the discharge pipe 104 toward the central region of the substrate W. More specifically, a pair of discharge pipes 104 are arranged on both sides of the plurality of substrates W as viewed in the arrangement direction R11, and the processing liquid is configured to flow from the plurality of discharge holes 141 of the pair of discharge pipes 104 toward the central region of the main surface of the substrate W. In such a configuration, by suppressing variations in the discharge flow velocity and / or discharge flow velocity of the plurality of discharge holes 141, it is possible to uniformly perform processing that depends particularly on the temperature of the processing liquid on the plurality of substrates W.

[0132] This embodiment can also be implemented in a modified form as described below.

[0133] For example, the plurality of discharge holes 141 provided in the processing region 140 do not necessarily have to be provided at equal intervals (i.e., a uniform arrangement density in the arrangement direction R11), and the interval near the end of the processing region 140 may be shortened (i.e., the arrangement density in the arrangement direction R11 may be increased).

[0134] Also, the plurality of discharge holes 141 do not necessarily have to have the same opening shape (e.g., circular), and the discharge holes may include a plurality of types of opening shapes. For example, long-hole-shaped discharge holes extending in the arrangement direction R11 may be provided near the end of the processing region 140, thereby achieving an arrangement of discharge holes with a large diameter (opening area).

[0135] In addition, not all of the plurality of ejection holes 141 need to have a main ejection direction parallel to the main surface of the substrate W. Some of the ejection holes 141 (for example, the ejection holes 141 disposed near the ends of the processing region 140) may have a main ejection direction inclined with respect to the main surface of the substrate W. The main ejection direction refers to the average ejection direction of the processing liquid ejected from the ejection holes 141.

[0136] Furthermore, in the above-described embodiment, one ejection pipe 104 is disposed on each of the lower sides inside the processing tank 102, and each ejection pipe 104 has a plurality of ejection holes 141 with different diameters. However, in addition to this configuration, a configuration may be adopted in which a plurality of ejection pipes are disposed on each of the lower sides inside the processing tank 102, and the processing liquid is distributed and supplied to these ejection pipes.

[0137] In addition, various design changes can be made within the scope of the matters described in the claims.

Description of Reference Numerals

[0138] 1: Substrate processing apparatus 2: Processing tank 3: Lifter 4: Ejection pipe 4a: Tip 4b: Introduction port 5: Processing liquid supply mechanism 40: Processing region 41: Ejection hole C0: Reference flow velocity distribution C1, C2: Flow velocity distribution R1: Arrangement direction W: Substrate 101: Substrate processing apparatus 102: Processing tank 103: Lifter 104: Ejection pipe 104a: Tip 104b: Introduction port 105: Processing liquid supply mechanism 140: Processing region 141: Ejection hole R11: Arrangement direction

Claims

1. A processing tank for storing a processing liquid for immersing a plurality of substrates; A lifter for aligning and supporting the plurality of substrates in a predetermined arrangement direction in the processing tank such that the main surfaces of adjacent substrates face each other with a gap therebetween; A discharge pipe disposed at a lower portion in the processing tank, having a plurality of discharge holes opened at intervals in the arrangement direction, and including a plurality of types of discharge holes having different diameters arranged along the arrangement direction; A substrate processing apparatus including a processing liquid supply mechanism for supplying a processing liquid to the discharge holes.

2. The substrate processing apparatus according to claim 1, wherein the plurality of types of discharge holes include a first discharge hole having a first diameter disposed in a central region with respect to the arrangement direction, and a second discharge hole having a second diameter larger than the first diameter disposed in a region outside the central region with respect to the arrangement direction.

3. The substrate processing apparatus according to claim 2, wherein the plurality of types of discharge holes further include a third discharge hole having a third diameter larger than the second diameter disposed in a region outside the region where the second discharge hole is disposed with respect to the arrangement direction.

4. The substrate processing apparatus according to claim 1, wherein the plurality of types of discharge holes are arranged such that the diameter increases from the center toward the outside with respect to the arrangement direction.

5. Using the distribution of the flow velocity of the processing liquid on the main surfaces of the plurality of substrates in the case where the plurality of discharge holes include only a single type of discharge hole having the same diameter as the reference flow velocity distribution, the diameters of the plurality of types of discharge holes are designed so as to have a flow velocity distribution with less variation than the reference flow velocity distribution. The substrate processing apparatus according to claim 1.

6. The substrate processing apparatus according to any one of claims 1 to 5, wherein a pair of the discharge pipes are disposed on both sides of the plurality of substrates as viewed from the arrangement direction, and are configured to form a flow of the processing liquid from the plurality of discharge holes of the pair of discharge pipes toward the center of the processing tank along the bottom surface of the processing tank.

7. The substrate processing apparatus according to any one of claims 1 to 5, wherein the processing liquid includes ozone water or an etching liquid.

8. The substrate processing apparatus according to claim 1, wherein the plurality of discharge holes include a first discharge hole group including a plurality of first discharge holes having a first diameter and continuous in the arrangement direction, and a second discharge hole group including a plurality of second discharge holes having a second diameter different from the first diameter and continuous in the arrangement direction.

9. The substrate processing apparatus according to claim 8, wherein a distribution range of discharge flow rates of the plurality of first discharge holes constituting the first discharge hole group and a distribution range of discharge flow rates of the plurality of second discharge holes constituting the second discharge hole group have an overlapping region.

10. The substrate processing apparatus according to claim 8, wherein a distribution range of discharge flow rates of the plurality of first discharge holes constituting the first discharge hole group overlaps with 30% or more of a distribution range of discharge flow rates of the plurality of second discharge holes constituting the second discharge hole group.

11. The substrate processing apparatus according to claim 8, wherein a distribution range of discharge flow rates of the plurality of first discharge holes constituting the first discharge hole group encompasses the entire distribution range of discharge flow rates of the plurality of second discharge holes constituting the second discharge hole group.

12. The substrate processing apparatus according to any one of claims 8 to 11, wherein the second diameter is 99% or more and 101% or less of the first diameter.

13. The substrate processing apparatus according to any one of claims 8 to 11, wherein the first diameter is 1 mm and the second diameter is 0.99 mm or more and 1.01 mm or less.

14. The substrate processing apparatus according to any one of claims 8 to 11, wherein the uniformity of the discharge flow rate of the processing liquid from the plurality of discharge holes is less than 2%.

15. The substrate processing apparatus according to any one of claims 1, 8 to 11, wherein the diameters of the plurality of types of discharge holes differ within a range of ±1%.

16. The substrate processing apparatus according to any one of claims 1, 8 to 11, wherein the plurality of types of discharge holes are two types of discharge holes having different diameters.

17. The substrate processing apparatus according to any one of claims 1, 8 to 11, wherein a flow of the processing liquid from the plurality of discharge holes of the discharge pipe toward a central region of a main surface of the substrate is configured to be formed.

18. The substrate processing apparatus according to any one of claims 1, 8 to 11, wherein a pair of the discharge pipes are arranged on both sides of the plurality of substrates as viewed from the arrangement direction, and a flow of the processing liquid from the plurality of discharge holes of the pair of discharge pipes toward a central region of a main surface of the substrate is configured to be formed.

19. The substrate processing apparatus according to any one of claims 1, 8 to 11, wherein the processing liquid contains one or more of phosphoric acid, an ammonia hydrogen peroxide aqueous solution, and TMAH (tetramethyl ammonium hydroxide).

20. The substrate processing apparatus according to any one of claims 1 and 8 to 11, wherein the processing liquid is discharged from the discharge holes at a temperature of 40°C or higher and 170°C or lower.

21. The substrate processing apparatus according to any one of claims 1 to 5 and 8 to 11, wherein one end of the discharge pipe in the arrangement direction is closed, and the other end in the arrangement direction has an introduction port for the processing liquid.

22. The substrate processing apparatus according to any one of claims 1 to 5 and 8 to 11, wherein one of the discharge holes is arranged between adjacent substrates in the arrangement direction.

23. The substrate processing apparatus according to any one of claims 1 to 5 and 8 to 11, wherein the discharge pipe is made of quartz.

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