Power module, and stationary power converter
The innovative switch arrangement and controlled switching sequence in power modules equalize stress and optimize substrate use, addressing reliability and efficiency issues in static power converters.
Patent Information
- Application Number
- JP2024218901
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-14
- Filing Date
- 2024-12-13
- Publication Date
- 2025-07-15
AI Technical Summary
Existing power modules in static power converters face issues with unequal operating stress and thermal characteristics among switching cells due to parasitic elements, particularly when using wide-bandgap semiconductors like SiC or GaN, leading to reliability concerns and inefficient utilization of substrate space.
The power module design arranges switches in pairs, forming switching cells with controlled switching sequences to equalize stress and utilize substrate space efficiently, using a drive circuit to manage the switches such that one second switch turns off, then one first switch turns on, and the other first switch turns off, followed by the other second switch turning off.
This design ensures balanced stress on all switching cells, improves electrical and thermal performance, and optimizes substrate utilization, enhancing reliability and reducing conduction losses in static power converters.
Smart Images
Figure 2025106211000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure generally relates to the field of power conversion, and more particularly to the field of static power converters and power modules of such converters.
Background Art
[0002] A static power converter of the DC-AC (conversion from DC electrical energy to AC electrical energy) type or a static power converter of the AC-DC (conversion from AC electrical energy to DC electrical energy) type includes switches and passive elements (capacitors, inductors, resistors). Depending on the nature (capacitive or inductive) of the DC source and the AC source, a bidirectional voltage switch or a bidirectional current-voltage switch is used in the converter.
[0003] Vertical or horizontal semiconductor components, such as transistors of MOSFETs, IGBTs, and HEMTs, or diodes, are generally used to form the switches of static power converters. A bidirectional voltage switch is formed, for example, by a transistor of a MOSFET, HEMT, or IGBT connected in series with a diode, or by two transistors of a MOSFET, HEMT, or IGBT connected in inverse series with each other. Metal coatings or electrical connections for vertical components are provided on the front and back surfaces of the laminate of the materials forming these components.
[0004] In converters of the DC-AC current inverter type and the AC-DC voltage rectifier type, the switches can be divided into two groups called "low side" and "high side" according to the common connection point of the switches (the common connection point is called "N" or the negative side when this common connection point is connected to the negative terminal of the power supply in the case of a "low side" switch, and is called "P" or the positive side when this common connection point is connected to the positive terminal of the power supply in the case of a "high side" switch). For example, in a three-phase static power converter, there are three switching cells formed by the switches of such a converter for each group.
Summary of the Invention
Problems to be Solved by the Invention
[0005] In order to impose the same operating constraints on all switches of a converter, all switching cells of the converter have the same parasitic elements (e.g., parasitic inductors). Further, in order to reduce these parasitic elements, all switches of the same group may be integrated into one power module. Two power modules integrated into the converter (one power module having low-side switches and the other power module having high-side switches) are designed identically so that all switching cells of the converter have the same parasitic elements. In another configuration, switches of two high-side groups and low-side groups may be integrated into one power module.
[0006] In a first configuration of the power module, each group of chips forming the components of each switch is arranged side by side in parallel with each other. For example, considering three switching cells formed according to this first configuration, two of the switching cells are referred to as "short" because they are formed by two switches juxtaposed with each other (one of the lateral switches and the central switch) with the central switch juxtaposed with the two lateral switches, and the third switching cell is referred to as "long" because it is formed by two switches that are not juxtaposed with each other (the two lateral switches). The problem with this first configuration is that not all switch components are subjected to the same operating stress (electrical and / or thermal), so the characteristics of the resulting switching cells are not the same as each other. For example, when the switching speed of the switching cell is high, different overvoltages are generated between the chips due to parasitic inductance, and there may be a difference in aging between the chips. Therefore, the reliability of the module may be impaired. This problem worsens when so-called wide-bandgap power semiconductor components, including, for example, SiC or GaN, are used.
[0007] In the second configuration of the power module, the chips forming the components of each switch are arranged in a star shape around the center point of the power module, and each branch of this star shape is formed by one of the switches. By arranging the switches such that all the angles formed between two adjacent branches of the star shape are equal, the characteristics of the resulting switching cells become substantially identical. The balance of the stress applied to the chips is guaranteed for all the switching cells. However, this second configuration is bulkier than the first configuration, and the substrate is not fully utilized (especially when the substrate has a square or rectangular shape, as most of the surface area of the substrate is not used) or has a form factor that is not practical.
[0008] Therefore, there is a need to provide a power module and a static power converter that do not have one or more of the above-described disadvantages.
Means for Solving the Problems
[0009] Embodiments overcome all or some of these disadvantages and are power modules comprising at least 2n switches configured to form n switching cells between a first electrical contact and n second electrical contacts, where n is an integer greater than or equal to 2, each of the second electrical contacts being connected to at least two of the switches, and the power module further comprising a drive circuit for driving the switches, - the switches are arranged in pairs, - each of the switching cells is configured to be formed by two first switches of the switches arranged in pairs and connected to different second electrical contacts, and two second switches of the switches each connected to one of the different second electrical contacts, - In each switching of the switching cells, the drive circuit is configured to control the switches such that one of the second switches switches from an on state to an off state, and then one of the first switches switches from an off state to an on state, and then the other of the first switches switches from an on state to an off state, and then the other of the second switches switches from an off state to an on state, thereby providing a power module.
[0010] According to a particular embodiment, n is an integer greater than or equal to 3.
[0011] According to a particular embodiment, two of the switches are connected to one of the second electrical contacts, and the other switch is disposed between the two of the switches.
[0012] According to a particular embodiment, for each switching cell, the different second electrical contacts to which the two second switches are connected are arranged side by side.
[0013] According to a particular embodiment, in each switching of the switching cell, the drive circuit - after the one of the second switches switches from the on state to the off state, one of the first switches switches from the off state to the on state after a first waiting time having a duration of less than 1 microsecond, and / or - after the one of the first switches switches from the off state to the on state, the other of the first switches switches from the on state to the off state after an overlap time having a duration of less than 1 microsecond, and / or - after the other of the first switches switches from the on state to the off state, the other of the second switches switches from the off state to the on state after a second waiting time having a duration of less than 1 microsecond is configured as such.
[0014] According to a specific embodiment, the power module includes a stack of conductive layers that are electrically insulated from each other and form the second electrical contact.
[0015] According to a specific embodiment, the switch is bidirectional with respect to voltage or bidirectional with respect to voltage and current.
[0016] According to a specific embodiment, each switch has transistors and diodes connected in inverse series or has two transistors connected in inverse series with each other.
[0017] According to a specific embodiment, the switch has a power component based on a wide bandgap semiconductor such as SiC and / or GaN.
[0018] A static power converter further provided with at least one power module according to a specific embodiment is further provided.
[0019] According to a specific embodiment, the power module is arranged in a housing having on its surface connection pads electrically connected to the first electrical contact, the second electrical contact, and an electrode for controlling the switch.
[0020] According to a specific embodiment, the static power converter is configured to be connected to at least one power source, and each of the switches of the power module has a magnitude such that it conveys a current value proportional to the current value of the current supplied by the power source.
[0021] According to a specific embodiment, each of the switches of the power module has a magnitude such that it conveys a current value equal to half the current value of the current supplied by the power source.
[0022] According to a specific embodiment, n second electrical contacts are common to the high-side switch and the low-side switch of the static power converter.
[0023] According to a specific embodiment, n second electrical contacts are arranged between the high-side switch and the low-side switch.
Brief Description of the Drawings
[0024] The foregoing and other features and advantages are described in detail in the remainder of the present disclosure of specific embodiments given as non-limiting examples with reference to the accompanying drawings.
[0025]
Figure 1
Figure 2
Figure 3
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Figure 5
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Figure 9
Modes for Carrying Out the Invention
[0026] In various drawings, like features are denoted by like reference numerals. In particular, structural and / or functional features common to the various embodiments may have the same reference numeral and may have the same structural characteristics, dimensional characteristics, and material characteristics.
[0027] For the sake of clarity, only steps and elements useful for understanding the described embodiments are shown and detailed. In particular, the formation of the various elements and circuits (such as switching components, drive circuits, etc.) is not detailed. A person skilled in the art can implement the various described functions in detail based on the functional descriptions provided herein.
[0028] Unless otherwise indicated, when referring to two elements connected together, this represents a direct connection without any intermediate element other than a conductor, and when referring to two elements coupled together, this represents that these two elements can be connected or can be coupled via one or more other elements.
[0029] In the following description, when referring to absolute positions such as "front", "rear", "top", "bottom", "left", "right", etc., or relative position-limiting terms such as "top", "bottom", "upper side", "lower side", "lateral direction", etc., or direction-limiting terms such as "horizontal", "vertical", etc., unless otherwise specified, this language refers to the orientation of the drawing. However, these terms do not assume the actual position and orientation of the device in use.
[0030] Unless otherwise specified, the expressions "about", "substantially", "essentially", and "degree" represent plus or minus 10% of the corresponding value, preferably plus or minus 5%.
[0031] In the examples of the embodiments described below, the static power converter includes one or more power modules formed of active components and passive components such as inductors and capacitors. The active components of the power module correspond to switches.
[0032] Examples of power modules 1000.1, 1000.2 that may form part of a static power converter according to a particular embodiment are described below in connection with FIG. 1. These power modules 1000.1, 1000.2 correspond to the power modules of the static power converter 2000 shown, for example, in FIG. 2.
[0033] In the example of FIG. 1, module 1000.1 corresponds to the so-called high-side module of the static power converter 2000, and module 1000.2 corresponds to the so-called low-side module of the static power converter 2000.
[0034] Each module 1000.1, 1000.2 has at least 2n switches 102 configured to form n switching cells between a first electrical contact and n second electrical contacts, where n is an integer greater than or equal to 2. In the example of FIG. 1, n is 3. Such a configuration is suitable, for example, when a converter 2000 including these modules 1000.1 and 1000.2 is configured to perform current or voltage conversion using, on the one hand, the DC voltage or DC current obtained between the first electrical contacts of modules 1000.1, 1000.2 and, on the other hand, the three-phase voltage or three-phase current obtained at each of the second electrical contacts.
[0035] As an example, when n is 3, the converter 2000 corresponds to a current inverter and / or a three-phase voltage rectifier, and a DC voltage source or DC current source, such as a photovoltaic panel, connected to the first electrical contacts of modules 1000.1, 1000.2, and, for example, a power transmission network or a rotating device, such as a motor, injected into and / or received at the second electrical contacts of modules 1000.1, 1000.2, may ensure conversion with the three-phase voltage obtained at the second electrical contacts of modules 1000.1, 1000.2. FIG. 2 shows such a configuration of the converter 2000, and the converter forms a current inverter electrically connected to a photovoltaic panel 2002 (represented in the form of a DC voltage source) and three-phase voltage connections 2004.1 to 2004.3. In FIG. 2, the converter 2000 further includes passive components, such as capacitors and inductors, not described in detail herein.
[0036] As a modification, n can be greater than 3.
[0037] The switches 102 of each of the modules 1000.1 and 1000.2 are arranged in pairs. In the example of FIG. 1, the switches 102 of each of the modules 1000.1 and 1000.2 are arranged in a direction parallel to the X-axis. Therefore, in each of the modules 1000.1 and 1000.2, the switches 102 are arranged parallel to each other and together occupy a rectangular or square surface area.
[0038] In the example of FIG. 1, each of the switches 102 of the first module 1000.1 has a first connection terminal that is electrically connected to a first electrical contact 104.1. In this example, the positive terminal of a power supply (not shown in FIG. 1) is configured to be electrically connected to this first electrical contact 104.1. Further, in this example, each of the switches 102 of the second module 1000.2 has a first connection terminal that is electrically connected to another first electrical contact 104.2 to which the negative terminal of the power supply is electrically connected.
[0039] Furthermore, in the example of FIG. 1, each of the switches 102 of the first module 1000.1 and the second module 1000.2 has a second connection terminal that is electrically connected to one of n second electrical contacts represented by reference numerals 106.1 to 106.3 in FIG. 1. Each of the second electrical contacts 106.1 to 106.3 is electrically connected to at least two of the switches 102 of each of the modules 1000.1 and 1000.2. In the example of FIG. 1, each of the second electrical contacts 106.1 to 106.3 is electrically connected to two of the switches 102 of each of the modules 1000.1 and 1000.2. In this example, the second electrical contacts 106.1 to 106.3 are common to the modules 1000.1 and 1000.2.
[0040] In the example of FIG. 1, the second electrical contact 106.1 has two spaced-apart portions that are electrically connected to each other to form one second electrical contact (the electrical connection portion between these two portions is not shown in FIG. 1). Further, each of the second electrical contacts 106.2, 106.3 has two juxtaposed portions that are electrically connected to each other, and two switches 102 of each of the modules 1000.1, 1000.2 are electrically connected to these portions. In FIG. 1, the two portions of each of the second electrical contacts 106.2, 106.3 are symbolically defined by dotted lines.
[0041] In the configuration shown in FIG. 1, for each of the modules 1000.1, 1000.2, the switches 102 connected to the second electrical contacts 106.2, 106.3 are arranged between the two switches 102 connected to the second electrical contact 106.1. Possible configurations of these portions of the second electrical contacts 106.1 - 106.3 are, for example, a configuration in which these various portions are arranged in the order of the first portion of contact 106.1, the first portion of contact 106.2, the second portion of contact 106.2, the first portion of contact 106.3, the second portion of contact 106.3, and the second portion of contact 106.1, parallel to the X axis.
[0042] Other configurations of the switches 102 and the second electrical contacts 106.1 - 106.3 are possible other than the configuration shown in FIG. 1. For example, each of the second electrical contacts 106.1 - 106.3 can have two spaced-apart portions that are electrically connected to each other. Possible configurations of these portions of the second electrical contacts 106.1 - 106.3 are, for example, a configuration in which these various portions are arranged in the order of the first portion of contact 106.1, the first portion of contact 106.2, the first portion of contact 106.3, the second portion of contact 106.1, the second portion of contact 106.2, and the second portion of contact 106.3, parallel to the X axis.
[0043] In each of the modules 1000.1 and 1000.2, each of the switching cells is configured to be formed by two first switches among the switches 102 arranged side by side and connected to different second electrical contacts 106.1 to 106.3, and two second switches among the switches 102 each connected to one of the different second electrical contacts 106.1 to 106.3. In the example shown in FIG. 1, with respect to module 1000.1, - The first switching cell is configured to switch a first conduction path extending between the first electrical contact 104.1 and the second electrical contact 106.1 and a second conduction path extending between the first electrical contact 104.1 and the second electrical contact 106.2. - The second switching cell is configured to switch a first conduction path extending between the first electrical contact 104.1 and the second electrical contact 106.2 and a second conduction path extending between the first electrical contact 104.1 and the second electrical contact 106.3. - The third switching cell is configured to switch a first conduction path extending between the first electrical contact 104.1 and the second electrical contact 106.3 and a second conduction path extending between the first electrical contact 104.1 and the second electrical contact 106.1.
[0044] Similarly, with respect to module 1000.2 shown in FIG. 1, - The first switching cell is configured to switch a first conduction path extending between the first electrical contact 104.2 and the second electrical contact 106.1 and a second conduction path extending between the first electrical contact 104.2 and the second electrical contact 106.2. - The second switching cell is configured to switch a first conduction path extending between the first electrical contact 104.2 and the second electrical contact 106.2 and a second conduction path extending between the first electrical contact 104.2 and the second electrical contact 106.3. - The third switching cell is configured to switch a first conduction path extending between the first electrical contact 104.2 and the second electrical contact 106.3 and a second conduction path extending between the first electrical contact 104.2 and the second electrical contact 106.1.
[0045] In a particular configuration, the switches 102 of the modules 1000.1, 1000.2 may be bi - directional only with respect to voltage, or may be bi - directional with respect to both voltage and current. Examples of embodiments of such bi - directional switches 102 are schematically shown in FIG. 3. Such switches 102 may be obtained respectively by connecting two chips each forming a one - way switch, or may be formed respectively on one chip.
[0046] In example a) of FIG. 3, switch 102 has two transistors 108.1 and 108.2 connected in inverse series with each other. In this example, transistors 108.1 and 108.2 are MOSFETs and are of the N type. The drain of the first transistor 108.1 forms the first connection terminal 110 of switch 102, the drain of the second transistor 108.2 forms the second connection terminal 112 of switch 102, and the sources of the first transistor 108.1 and the second transistor 108.2 are connected together. The illustrated diodes connected in parallel with transistors 108.1 and 108.2 correspond to the parasitic diodes of these transistors or external diodes connected in parallel with these transistors 108.1 and 108.2. In this configuration, by turning on transistor 108.1 and turning off transistor 108.2 (current flows through transistor 108.2 via the parasitic diode of transistor 108.2 or the external diode connected in parallel with transistor 108.2), current can flow from the first connection terminal 110 to the second connection terminal 112. The flow of current from the second connection terminal 112 to the first connection terminal 110 is possible by turning off transistor 108.1 (current flows through transistor 108.1 via the parasitic diode of transistor 108.1 or the external diode connected in parallel with transistor 108.1) and turning on transistor 108.2.
[0047] In example b) of FIG. 3, switch 102 has two transistors 108.1 and 108.2 connected in inverse series with each other, similar to example a). In this example b), transistors 108.1 and 108.2 are IGBTs and are of N-type. The collector of the first transistor 108.1 forms the first connection terminal 110 of switch 102, the collector of the second transistor 108.2 forms the second connection terminal 112 of switch 102, and the emitters of the first transistor 108.1 and the second transistor 108.2 are connected to each other. The illustrated diodes connected in parallel with transistors 108.1 and 108.2 correspond to the parasitic diodes of these transistors, or external diodes connected in parallel with these transistors 108.1 and 108.2. The operation of such a switch is the same as the operation described above with respect to example a).
[0048] In example c) of FIG. 3, switch 102 has a transistor 108.1 connected in series with a diode 114. In this example, transistor 108.1 is a MOSFET and is of N-type. The drain of transistor 108.1 forms the first connection terminal 110 of switch 102, the cathode of diode 114 forms the second connection terminal 112 of switch 102, and the source of transistor 108.1 is connected to the anode of diode 114. In this configuration, by turning on transistor 108.1, the flow of current from the first connection terminal 110 to the second connection terminal 112 is possible. The flow of current from the second connection terminal 112 to the first connection terminal 110 is not possible because diode 114 is present.
[0049] In example d) of FIG. 3, switch 102 is the same as the switch in example c) except that transistor 108.1 is an IGBT.
[0050] As another example of switch 102, there is the use of switches other than transistors, such as the use of MOSFETs other than HEMT transistors and / or IGBTs, the use of switches having different types of transistors, the use of one or more P-type transistors, etc. Further, regarding the aforementioned examples c) and d), it is possible to replace components. Thus, regarding example c), this would involve connecting the anode of diode 114 to the first connection terminal 110 and connecting the source of transistor 108 to the second connection terminal 112.
[0051] In a specific configuration, the switch 102 of modules 1000.1, 1000.2 has vertical power components based on wide-bandgap semiconductors such as SiC and / or GaN. By forming the switch 102 using components based on wide-bandgap semiconductors, it becomes possible to increase the switching speed of the switch compared to switches using other types of components.
[0052] Figure 4 schematically shows an example of the vertical mounting of transistor 108. In this example, transistor 108 has a source electrical contact 116 and a gate electrical contact 118 accessible on the first surface of the component, and a drain electrical contact (not visible in Figure 4) accessible on the second surface opposite to the first surface of the component.
[0053] An example of the vertical mounting of diode 114 is further shown in Figure 4. In this example, diode 114 has an anode electrical contact 120 accessible on the first surface of the component, and a cathode electrical contact (not visible in Figure 4) accessible on the second surface opposite to the first surface of the component.
[0054] The components of switch 102 may each have a current rating, i.e., a current conduction capacity proportional to the semiconductor surface area used by each of these components. In a specific configuration, each of the switches 102 of modules 1000.1 and 1000.2 may have a magnitude such that it is proportional to the current supplied by the current source connected to converter 2000 and conveys a current value lower than said current, or in some cases, may have a magnitude such that it conveys a current value half that of the current supplied by this current source.
[0055] As a variant, converter 2000 may comprise three or more power modules, for example two so-called high-side modules and two so-called low-side modules.
[0056] As a variant, the high-side switch and the low-side switch may be integrated into one power module.
[0057] Figure 5 schematically shows an example of the configuration and arrangement of switches identical to those previously described in relation to Figure 1, but differing in that they are arranged within the same power module 1000. Furthermore, in the example of Figure 5, the diodes and transistors of the switches in the high-side portion are swapped with respect to the configuration previously described in relation to Figure 1, i.e., they respectively correspond to the configuration of example c) of Figure 3. This arrangement has the advantage, in particular, of providing good accessibility to the transistor gate control terminals at the edge of power module 1000. However, as a variant, the switches in the high-side portion may be formed as previously described in relation to Figure 1.
[0058] In the example of Figure 5, the switches 102 in the low-side portion correspond to the switches shown in module 1000.2 of Figure 1. In this example, each of the switches 102 in the low-side portion is formed by a diode 114 and a MOSFET transistor 108 as follows. - The anode of diode 114 is electrically connected to one of the second electrical contacts 106.1 to 106.3. - The cathode of diode 114 is electrically connected to the drain of transistor 108 (the electrical connection is not shown in FIG. 5). - The source of transistor 108 is electrically connected to the first electrical contact 104.2.
[0059] In the example of FIG. 5, the source and gate of each transistor 108 of the low-side switches 102 are further electrically connected to other electrical contacts 122, 124 known as Kelvin contacts or Kelvin sources used to improve the gate drive of the transistors.
[0060] However, the high-side switches 102 of the module 1000 in FIG. 5 are different from the switches of the module 1000.1 shown in FIG. 1. In this example, each of the switches 102 is formed by a diode 114 and a MOSFET transistor 108 as follows. - The cathode of diode 114 is electrically connected to one of the second electrical contacts 106.1 to 106.3. - The anode of diode 114 is electrically connected to the source of transistor 108. - The drain of transistor 108 is electrically connected to the first electrical contact 104.1.
[0061] In the example of FIG. 5, the source and gate of each transistor 108 of the high-side switches 102 of the module 1000 are further electrically connected to other electrical contacts 122, 124 (Kelvin contacts or Kelvin sources).
[0062] In a specific configuration such as the one shown in FIG. 5, the second electrical contacts 106.1 to 106.3 are arranged between the high-side part and the low-side part of the power module 1000. Further, the second electrical contacts 106.1 to 106.3 are here formed by a stack of conductive layers that are electrically insulated from each other. These conductive layers may be present on the same plane. Further, these layers may be, for example, - an assembly or stack of double-sided insulating substrates formed of, for example, DBC-type ceramics or FR4-PCB-type epoxy resins, or, - a multilayer insulating substrate formed of, for example, DBC-type ceramics or FR4-PCB-type epoxy resins, or, - an assembly or stack of insulated copper bars (for example, a stacked busbar configuration), or, - a flexible multilayer printed circuit board and may be formed by.
[0063] Further, in this example, the layers 126, 128, 130 each have ends respectively represented by the reference numerals 127, 129, 131, and the ends form electrical access portions to these layers and do not overlap when these layers are stacked.
[0064] An example of the conductive layers forming the second electrical contacts 106.1 to 106.3 of the power module 1000 in FIG. 5 is shown in FIG. 6. The layer 126 forms the second electrical contact 106.1, the layer 128 forms the second electrical contact 106.2, and the layer 130 forms the second electrical contact 106.3.
[0065] The semiconductor components 108, 114 and the electrical contacts 104.1, 104.2, 106.1 to 106.3, 122, 124 may be arranged on a substrate 132 that is electrically insulated from the components of the module 1000 and is not visible in FIG. 5. Since the switches 102 are arranged side by side, the substrate 132 used may have a rectangular or square shape in plan view.
[0066] In a specific configuration, the module 1000 may include a housing 1006 in which a group of high-side switches and low-side switches are arranged. Such a housing 1006 may have connection pads on the surface 1008 that are electrically connected to the first electrical contacts 104.1, 104.2, the second electrical contacts 106.1 - 106.3, and the control electrodes of the switches 102.
[0067] FIG. 7 schematically shows an example of an embodiment of such a power module 1000 that forms an integrated power module with the housing 1006. In this figure, the housing 1006 has on the upper surface 1008 two first connection pads 1010.1, 1010.2 that are electrically connected to one of the first electrical contacts 104.1, 104.2 respectively, second connection pads 1012.1 - 1012.3 that are electrically connected to one of the second electrical contacts 106.1 - 106.3 respectively, and third connection pads 1014.1, 1014.2 that are electrically connected to the control electrodes of the switches 102 respectively.
[0068] FIG. 8 is a cross-sectional view schematically showing an example of the integrated module 1000. FIG. 8 shows in particular the arrangement of the various aforementioned elements of the power module 1000. The reference numeral 1016 indicates the electrical connection between the connection pads arranged on the upper surface 1008 and the electrical contacts of the group of high-side switches and low-side switches. The module 1000 further includes an insulating substrate 132 and a conductive base plate 1018 to which the housing 1006 is attached.
[0069] Each switch 102 is controlled by the drive circuit 134 shown in FIG. 2. The drive circuit 134 may be common to all the switches 102 of the power module 1000.
[0070] Switch 102 and the second electrical contacts 106.1 to 106.3 are arranged such that each of the switching cells is formed by two first switches of the switches 102 arranged side by side and connected to different second electrical contacts 106.1 to 106.3, and two second switches of the switches 102 that do not have to be arranged side by side and are connected to the second electrical contacts 106.1 to 106.3. Therefore, in each set of "high-side" switches or "low-side" switches, at least two switches, referred to as first switches, of the two conduction paths through which switching is performed by the switching cells are arranged side by side.
[0071] The control circuit 134 controls each switch 102 of the switching cell such that one of the second switches 102 switches from the on state to the off state, then one of the first switches 102 switches from the off state to the on state, then the other of the first switches 102 switches from the on state to the off state, and then the other of the second switches 102 switches from the off state to the on state. The on state, or the conductive state or the saturation state, corresponds to the state in which the switch 102 conducts current, and the off state, or the non-conductive state, corresponds to the state in which the switch 102 does not conduct current.
[0072] FIG. 9 is a timing diagram of such a signal for controlling one switch 102 in the "high-side" group or the "low-side" group. Taking an example of the first switching cell of the high-side group configured to switch the first conduction path from the first electrical contact 104.1 to the second electrical contact 106.1 and the second conduction path from the first electrical contact 104.1 to the second electrical contact 106.2, the signals S1 to S4 are as follows. - Signal S1 corresponds to a signal for controlling the switch 102 that electrically connects the first electrical contact 104.1 to the first portion of the second electrical contact 106.1. - The signal S2 corresponds to a signal for controlling the switch 102 that electrically connects the first electrical contact 104.1 to the second portion of the second electrical contact 106.1. - The signal S3 corresponds to a signal for controlling the switch 102 that electrically connects the first electrical contact 104.1 to the first portion of the second electrical contact 106.2. - The signal S4 corresponds to a signal for controlling the switch 102 that electrically connects the first electrical contact 104.1 to the second portion of the second electrical contact 106.2.
[0073] In this case, between time point T0 and time point T1, the switch forming the first conduction path is turned on, and the switch forming the second conduction path is turned off. In this state, the conduction loss is minimized. For example, within this time less than 1 millisecond, the drive algorithm implemented in the drive circuit 134 can determine at which phase or which conduction path the next switching will occur (corresponding to the second electrical contact 106.2 in the example described in this specification).
[0074] At time point T1, the switch 102 of the first conduction path, which is physically separated from the switch of the second conduction path (connecting the first electrical contact 104.1 to the second portion of the second electrical contact 106.1), turns off (corresponding to the transition of the signal S2 from state 1 to state 0 in the timing diagram of FIG. 9). For example, during the time between time point T1 and time point T2, which is referred to as the first waiting time, or during the first dead time having a duration of less than 1 microsecond, for example, all the current injected into the first electrical contact 104.1 is sent to the only on-switch 102 of the first conduction path (connecting the first electrical contact 104.1 to the first portion of the second electrical contact 106.1). During this time, the conduction loss instantaneously increases.
[0075] At time T2, the switch 102 of the second conduction path juxtaposed to the switch of the first conduction path, i.e., the switch that connects the first electrical contact 104.1 to the first portion of the second electrical contact 106.2, is turned on (corresponding to the switching of the signal S3 from state 0 to state 1). The time between time T2 and time T3, referred to as the overlap time, is shorter than, for example, 1 microsecond and is used to form the path of the current injected into the first electrical contact 104.1 during the switching from one phase of the switch to another phase or from one conduction path to another conduction path. As during the time between time T1 and time T2, the conduction loss remains instantaneously increased.
[0076] At time T3, the switch that has remained in the on state of the first conduction path so far is turned off (corresponding to the switching of the signal S1 from state 1 to state 0). During the time between time T3 and time T4, referred to as, for example, the second waiting time, or during the second dead time having a duration of less than, for example, 1 microsecond, all the current injected into the first electrical contact 104.1 is sent to the only on switch 102 of the second conduction path (which connects the first electrical contact 104.1 to the first portion of the second electrical contact 106.2). During this time, the conduction loss instantaneously increases.
[0077] At time T4, the switch of the second conduction path (which connects the first electrical contact 104.1 to the second portion of the second electrical contact 106.2) is turned on (corresponding to the switching of the signal S4 from state 0 to state 1), and the switching from the first conduction path to the second conduction path by the first switching cell is completed.
[0078] The above description of the switching performed for the first switching cell of the group of high-side switches is also applicable to the switching performed for other switching cells of the group of high-side switches and the switching cells of the group of low-side switches.
[0079] Thus, optimization of the converter losses may be achieved by varying the duration of the dead times described above and / or by varying the allocation of these dead times over the entire duration between time point T1 and time point T4.
[0080] In general, the static converter based on the power module 1000 may be of the DC-AC type, for example a current source inverter (CSI) or a boost type inverter (BTI), or may be of the AC-DC type, for example a buck rectifier (BTR). The converter implemented using the power module 1000 may be, for example, a three-phase static power converter used in a power transmission network or a rotating device.
[0081] In all examples of the embodiments, a particular arrangement of bare semiconductor dies forming the components of the switch 102, for example on an insulating substrate (of any nature), is provided in combination with a particular drive mode provided by the switch drive circuit by means of the described power module. By means of the provided module, in particular, - the use of an insulating substrate that makes it possible to reduce and make full use of the form factor of the space used by the switches due to a compact arrangement of the switches arranged side by side in a defined space of rectangular or square shape (as opposed to a star arrangement of the switches), - the electrical and thermal performance of the module, and - the reliability of the module due to all components being subjected to the same operating stresses, may be improved.
[0082] In all examples of the embodiments, the components of the switches of one or more power modules may operate in a switching mode (off state or on state, or saturation state or non-conductive state) at a high switching frequency, for example on the order of several hundred kHz.
[0083] Various embodiments and variations are described. Those skilled in the art will understand that they can combine certain features of these various embodiments and variations, and other variations will become apparent to those skilled in the art.
[0084] Finally, the actual implementation of the described embodiments and variations is within the scope of the skills of those skilled in the art based on the functional representations described above.
Claims
1. A power module (1000, 1000.1, 1000.2), comprising: At least 2n switches (102) configured to form n switching cells between a first electrical contact (104.1, 104.2) and n second electrical contacts (106.1 - 106.3), where n is an integer greater than or equal to 2; Each of the second electrical contacts (106.1 - 106.3) is connected to at least two of the switches (102); The power module further comprises a drive circuit (134) for driving the switches (102); - The switches (102) are arranged in pairs; - Each of the switching cells is configured to be formed by two first switches among the switches (102) arranged in parallel and connected to different second electrical contacts (106.1 - 106.3), and two second switches among the switches (102) each connected to one of the different second electrical contacts (106.1 - 106.3); - The drive circuit (134) is configured to control the switches (102) such that in each switching of each switching cell, one of the second switches (102) switches from an on state to an off state, then one of the first switches (102) switches from an off state to an on state, then the other of the first switches (102) switches from an on state to an off state, and then the other of the second switches (102) switches from an off state to an on state. A power module.
2. The power module (1000, 1000.1, 1000.2) according to claim 1, wherein n is an integer greater than or equal to 3.
3. The power module (1000, 1000.1, 1000.2) according to claim 2, wherein two of the switches (102) are connected to one of the second electrical contacts (106.1 - 106.3), and the other switches (102) are arranged between the two of the switches (102).
4. For each of the switching cells, the different second electrical contacts (106.1 - 106.3) to which the two second switches (102) are connected are arranged side by side, the power module (1000, 1000.1, 1000.2) according to claim 2.
5. The drive circuit (134) performs switching for each of the switching cells, - After switching from the on state to the off state of the one of the second switches (102), the one of the first switches (102) switches from the off state to the on state after a first standby time having a duration of less than 1 microsecond, and / or - After switching from the off state to the on state of the one of the first switches (102), the other of the first switches (102) switches from the on state to the off state after an overlap time having a duration of less than 1 microsecond, and / or - After switching from the on state to the off state of the other of the first switches (102), the other of the second switches switches from the off state to the on state after a second standby time having a duration of less than 1 microsecond The power module (1000, 1000.1, 1000.2) according to any one of claims 1 to 4, configured as described above.
6. The power module (1000, 1000.1, 1000.2) according to any one of claims 1 to 5, comprising a stack of conductive layers (126, 128, 130) that are electrically insulated from each other and form the second electrical contacts (106.1 - 106.3).
7. The switch (102) is bidirectional with respect to voltage, or bidirectional with respect to voltage and current, the power module (1000, 1000.1, 1000.2) according to any one of claims 1 to 6.
8. Each switch (102) has transistors (108, 108.1) and a diode (114) connected in inverse series, or has two transistors (108, 108.1, 108.2) connected in inverse series with each other, the power module (1000, 1000.1, 1000.2) according to claim 7.
9. The power module (1000, 1000.1, 1000.2) according to any one of claims 1 to 8, wherein the switch (102) has a power component based on a wide bandgap semiconductor such as SiC and / or GaN.
10. A static power converter (2000) comprising at least one power module (1000, 1000.1, 1000.2) according to any one of claims 1 to 9.
11. The static power converter (2000) according to claim 10, wherein the power module (1000, 1000.1, 1000.2) is disposed in a housing (1006) having connection pads (1010.1, 1010.2, 1012.1 - 1012.3, 1014.1, 1014.2) on a surface (1008) that are electrically connected to the first electrical contact (104.1, 104.2), the second electrical contact (106.1 - 106.3), and an electrode for controlling the switch (102).
12. configured to be connected to at least one power source (2002), The static power converter (2000) according to claim 10 or 11, wherein each of the switches (102) of the power module (1000, 1000.1, 1000.2) has a magnitude such that it conveys a current value proportional to the current value of the current supplied by the power source (2002).
13. The static power converter (2000) according to claim 12, wherein each of the switches (102) of the power module (1000, 1000.1, 1000.2) has a magnitude such that it conveys a current value equal to half of the current value of the current supplied by the power source (2002).
14. The static power converter (2000) according to any one of claims 10 to 13, wherein the n second electrical contacts (106.1 - 106.3) are common to the high-side switch (102) and the low-side switch (102) of the static power converter (2000).
15. The static power converter (2000) according to any one of claims 10 to 14, wherein the n second electrical contacts (106.1 - 106.3) are disposed between the high-side switch (102) and the low-side switch (102).