Semiconductor device and airflow generating package

Abstract

To provide a semiconductor device with improved heat dissipation and an airflow generating package.SOLUTION: A PG airflow generating package includes a base BSP, a covering structure CSV, and a membrane structure FS. The membrane structure FS is disposed between the base BSP and the covering structure CSV, and includes a flap pair FP comprising a first flap and a second flap. The flap pair operates at ultrasonic speed so that the airflow generating package PG generates airflow. An air opening OPP2 is formed on the covering structure CSV.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present application relates to a semiconductor device and an airflow generating package, and more particularly to a semiconductor device and an airflow generating package with improved heat dissipation performance.

Background Art

[0002] In recent years, device thermal management has a great impact on the performance of components within the device, and the performance of the device is highly related to thermal management. For example, an electronic device (such as a smartphone or a tablet), which is a type of device, requires more complex operations as it becomes thinner, so the power consumption of the battery also becomes larger. On the other hand, the demand for AI (artificial intelligence) computing is increasing rapidly, and thermal management is essential for AI computing performance. Therefore, the importance of thermal management is increasing for the future viability of electronic devices (such as palm-sized electronic devices, servers in data centers).

[0003] Therefore, to improve the performance of the device, it is necessary to improve thermal management (such as heat dissipation).

Summary of the Invention

[0004] Therefore, a first object of the present invention is to provide an electronic device with improved heat dissipation performance of the electronic device due to the presence of a component configured to generate a plurality of air pulses. Further, the present invention provides a related airflow generating package. Further, the present invention provides a semiconductor device which is a type of the above electronic device.

[0005] One embodiment of the present invention is

[0006] One embodiment of the present invention provides an airflow generation package including a base, a covering structure, and a film structure. The film structure is disposed between the base and the covering structure and includes a pair of flaps including a first flap and a second flap. The pair of flaps operates at an ultrasonic rate so that the airflow generation package generates an airflow. A first air opening is formed in the covering structure.

[0007] One embodiment of the present invention provides a semiconductor device including an operating component and an airflow generation chip. The operating component generates heat during operation. The airflow generation chip is disposed on, under, or by the operating component, and the airflow generation chip is configured to generate an airflow to dissipate the heat generated by the operating component.

[0008] One embodiment of the present invention provides an airflow generation package including a fin-type heat conduction component, a first airflow generation chip, and a second airflow generation chip. The fin-type heat conduction component is disposed on a heat source. The first airflow generation chip is disposed on a first side of the fin-type heat conduction component and is configured to generate an airflow inward. The second airflow generation chip is disposed on a second side of the fin-type heat conduction component and is configured to generate an airflow outward. The airflow is configured to flow through the fin-type heat conduction component to dissipate heat from the heat source.

[0009] These and other objects of the present invention will become apparent to those skilled in the art without any doubt after reading the following detailed description of the preferred embodiments shown in various figures and drawings.

Brief Description of the Drawings

[0010]

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MODE FOR CARRYING OUT THE INVENTION

[0011] To provide a better understanding of the present invention to those skilled in the art, the preferred embodiments of the main components and typical materials or ranges of parameters are detailed in the following description. These preferred embodiments of the present invention are shown in the accompanying drawings together with numbered elements in order to explain in detail the content and effects to be achieved. It should be noted that the drawings are simplified schematic diagrams, and since the materials and parameter ranges of the main components are described based on today's technology, only the components and combinations related to the present invention are shown in order to provide a clearer description of the basic structure, implementation or operation method of the present invention. The components are actually more complex, and the ranges of parameters or materials used may evolve in accordance with future technological advancements. In addition, for ease of explanation, the components shown in the drawings may not represent their actual numbers, shapes and dimensions. The details can be adjusted according to the design requirements.

[0012] In the following description and claims, the terms "comprising", "consisting of" and "having" are used in an open-ended sense and should therefore be interpreted to mean "including but not limited to". Thus, when the terms "comprising", "consisting of" and / or "having" are used in the description of the present invention, it is indicated that the corresponding features, regions, steps, operations and / or components exist, but are not limited to the existence of one or more corresponding features, regions, steps, operations and / or components.

[0013] In the following description and claims, when a component or layer is referred to as being "connected to" another component or layer, it may be directly connected to this other component or layer, or intervening components or layers may exist. In contrast, when a component is referred to as being "directly connected to" another component or layer, no intervening components or layers exist.

[0014] In the following description and claims, when "component A1 is formed by B1", B1 is present in the formation of component A1 or B1 is used in the formation of component A1, and the presence and use of one or more other features, regions, steps, operations and / or components are not excluded in the formation of component A1.

[0015] In the following description and claims, the term "chamber" generally means an object having an empty space inside itself. In the following description and claims, the term "void" means an empty space within an object. For example, the void of a chamber is the empty space present within the chamber, and the chamber is the shell of this void.

[0016] In the following description and claims, the term "substantially" generally means that small deviations may or may not be present. For example, the terms "substantially parallel" and "substantially along" mean that the angle between two components can be below a specific angle threshold, for example, 10 degrees, 5 degrees, 3 degrees. For example, the term "substantially aligned" means that the deviation between two components can be below a specific deviation threshold, for example, 2 μm or 1 μm. For example, the term "substantially the same" means that the deviation is, for example, within 10% of a predetermined value or range, or within 5%, 3%, 2%, 1% or 0.5% of a predetermined value or range.

[0017] In this specification and the claims, the term "horizontal direction" generally means a direction parallel to the horizontal plane, the term "horizontal plane" generally means a plane parallel to the directions X and Y in the drawing (that is, the directions X and Y of the present invention can be regarded as horizontal directions), the terms "vertical direction" and "upper surface direction" generally mean directions parallel to the direction Z in the drawing and perpendicular to the horizontal direction, and the directions X, Y, and Z are perpendicular to each other. In this specification and the claims, the term "top view" generally means an observation result seen along the vertical direction. In this specification and the claims, the term "cross-sectional view" generally means that the structure cut along the vertical direction is seen along the horizontal direction.

[0018] The terms such as first, second, third, etc. can be used to describe various components, but such components are not limited by such terms. Such terms are only used to distinguish the components in the specification from other components, and when not described in the specification, such terms have nothing to do with the manufacturing order. The same terms may not be used in the claims, but instead, the terms such as first, second, third, etc. can be used with respect to the order in which the elements are claimed. Therefore, in the following description, the first component may be the second component in the claims.

[0019] It should be noted that the technical features in different embodiments described below can be replaced, recombined, or combined with each other to form other embodiments without departing from the spirit of the present invention. That is, the technical features described in the embodiments can be mixed or combined in various ways as long as there is no contradiction between them.

[0020] In the present invention, the airflow generating component is configured to generate an airflow, and heat dissipation is implemented and / or improved by the airflow caused by the airflow generating component. In the present invention, the airflow generating component may be designed based on requirements, and the airflow generating component can be formed by any suitable method. Some embodiments of the airflow generating component will be described below.

[0021] For example, the airflow generating component may be an airflow generating chip, and the airflow generating chip may be formed by a semiconductor manufacturing process. For example, the airflow generating chip may be a MEMS chip including a microelectromechanical system (MEMS) structure, but is not limited thereto.

[0022] Referring to FIGS. 1 and 2, FIG. 1 is a schematic cross-sectional view showing an airflow generating chip according to an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view showing a common mode operation and a differential mode operation of the airflow generating chip according to an embodiment of the present invention, and the airflow generating chip AFC shown in FIG. 1 is in an intermediate state S1. As shown in FIGS. 1 and 2, the airflow generating chip AFC is configured to generate an airflow. In some embodiments, the airflow generating chip AFC may be configured to generate a plurality of air pulses, the airflow may be composed of air pulses, and the airflow generating chip AFC may generate air pulses at any suitable pulse rate. For example, the airflow generating chip AFC may generate air pulses at an ultrasonic (pulse) rate higher than the maximum audible frequency of a human (e.g., 16 kHz, 20 kHz, 22 kHz) so that a user cannot hear the operation of the airflow generating chip AFC configured to generate an airflow and / or air pulses, but is not limited thereto.

[0023] As shown in FIG. 1, the airflow generating chip AFC may include at least one anchor structure AR and at least one membrane structure FS fixed by / on the anchor structure AR. The anchor structure AR may be disposed outside the membrane structure FS. The membrane structure FS and the anchor structure AR may include any suitable material. In some embodiments, the membrane structure FS and the anchor structure AR may individually include silicon (e.g., single crystal silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide, silicon oxide), germanium, germanium compounds, gallium, gallium compounds (e.g., gallium nitride or gallium arsenide), other suitable materials, or combinations thereof, but are not limited thereto. In some embodiments, the membrane structure FS and the anchor structure AR may have the same material.

[0024] In the operation of the airflow generation chip AFC, the membrane structure FS may be operated to have an operation, and the anchor structure AR may be fixed. That is, the anchor structure AR may be a fixed end (or fixed edge) with respect to the membrane structure FS during the operation of the airflow generation chip AFC. In some embodiments, the membrane structure FS may be operated to move up and down, but is not limited thereto. In the present invention, the terms "move up" and "move down" mean that the membrane structure FS moves substantially along the direction Z. Further, "upward" means the direction Z (i.e., the +Z direction), and "downward" may mean the direction opposite to the direction Z (i.e., the -Z direction). That is, the operation direction of the membrane structure FS is parallel to the direction Z.

[0025] As shown in FIG. 1, the membrane structure FS of the airflow generation chip AFC includes at least one slit SL, and the membrane structure FS is divided into a plurality of flaps FL by the slit SL (i.e., the flaps FL are separated from each other by the slit SL, and the slit SL may be the boundary of the flaps FL). The number of flaps FL can be designed based on requirements. For example, as shown in FIG. 1, the membrane structure FS is divided into a first flap FL1 and a second flap FL2 by the slit SL, the first flap FL1 and the second flap FL2 are arranged opposite to each other, and at least one slit SL may be between the first flap FL1 and the second flap FL2. Note that the first flap FL1 and the second flap FL2 that are opposite to each other may form a flap pair FP in the membrane structure FS.

[0026] In FIG. 1, the flap FL of the membrane structure FS has at least one fixed edge (or fixed end) fixed to the anchor structure AR and at least one free edge (or free end) not permanently fixed to any component within the airflow generation chip AFC, and the fixed edge and free edge of each flap FL can be designed based on requirements. For example (as shown in FIG. 1), the slit SL defines one free edge of the first flap FL1 and one free edge of the second flap FL2, and this free edge of the first flap FL1 can be opposite to the fixed edge of the first flap FL1, and this free edge of the second flap FL2 can be opposite to the fixed edge of the second flap FL2, but is not limited thereto.

[0027] In the present invention, the number of slits SL included in the membrane structure FS may be adjusted based on requirements, the slit SL may be disposed at any appropriate position of the membrane structure FS, and may have any appropriate upper surface pattern. For example, the slit SL can be a straight slit, a curved slit, a combination of straight slits, a combination of curved slits, or a combination of straight slits and curved slits.

[0028] The airflow generation chip AFC may include an actuator AT configured to operate the membrane structure FS to generate an airflow and / or an air pulse. The actuator AT may be disposed at any appropriate position, and the position of the actuator AT may be related to the operating method of the actuator AT. For example, in FIG. 1, the actuator AT may overlap the membrane structure FS in the Z direction, but is not limited thereto. For example, in FIG. 1, the actuator AT may be disposed on the membrane structure FS, but is not limited thereto. For example, in FIG. 1, the actuator AT may contact the membrane structure FS, but is not limited thereto.

[0029] As shown in FIG. 1, the actuator AT may include a plurality of operating parts disposed on a plurality of flaps FL of the membrane structure FS. For example (as shown in FIG. 1), the actuator AT includes a first operating part AT1 disposed on the first flap FL1 and a second operating part AT2 disposed on the second flap FL2.

[0030] Actuator AT has a monotonic electromechanical conversion function with respect to the movement of the membrane structure FS along the direction Z. In some embodiments, actuator AT may include, but is not limited to, a piezoelectric actuator, an electrostatic actuator, a nanoscope electrostatic drive (NED) actuator, an electromagnetic actuator, or any other suitable actuator. For example, in one embodiment, actuator AT may include a piezoelectric actuator, which may include, for example, two electrodes and a piezoelectric material layer (e.g., lead zirconate titanate, PZT) disposed between those electrodes. The piezoelectric material layer may operate the membrane structure FS based on a drive signal (e.g., a drive voltage and / or a drive voltage difference between two electrodes) received by the electrodes. For example, in another embodiment, actuator AT may include an electromagnetic actuator (e.g., a planar coil). The electromagnetic actuator may operate the membrane structure FS based on a received drive signal (e.g., a drive current) and a magnetic field (i.e., the membrane structure FS may be operated by an electromagnetic force). For example, in yet another embodiment, actuator AT may include an electrostatic actuator (e.g., a conductive plate) or an NED actuator. The electrostatic actuator or the NED actuator may operate the membrane structure FS based on a received drive signal (e.g., a drive voltage) and a static magnetic field (i.e., the membrane structure FS may be operated by an electrostatic force). Hereinafter, actuator AT may be, for example, a piezoelectric actuator.

[0031] For example, when the airflow generation chip AFC is a MEMS chip, the membrane structure FS, the anchor structure AR, and the actuator AT are, but are not limited to, MEMS structures within the MEMS chip. Further, since the airflow generation chip AFC generates an airflow and / or an air pulse by operating the membrane structure FS via the actuator AT, the airflow generation chip AFC may be, but is not limited to, a fanless blower.

[0032] In the present invention, the membrane structure FS (flap FL) is actuated / controlled by the actuator AT so as to be moved upward and downward such that the vent opening OPV associated with the slit SL is formed / opened and closed (i.e., the membrane structure FS is configured to form / open and close the vent opening OPV). The vent opening OPV is formed between the both side walls of the slit SL (i.e., the vent opening OPV is formed between the first flap FL1 and the second flap FL2). That is, the vent opening OPV is formed by the slit SL. In the condition where the "vent opening OPV is closed / sealed", it is difficult for air to pass through the space between the two opposing side walls of the slit SL, which means that the flow resistance of the vent opening OPV is large or larger than the threshold value. In the condition where the "vent opening OPV is formed / opened", air can easily pass through the space between the both side walls of the slit SL, which means that the flow resistance of the vent opening OPV is small or smaller than the threshold value.

[0033] In the present invention, the airflow generation chip AFC can generate an airflow and / or an air pulse by any suitable airflow generation method. For example, the airflow generation method related to FIGS. 1 and 2 will be described below. This airflow generation method generates an airflow and / or an air pulse by changing the state of the vent opening OPV and changing the air pressure on both sides of the membrane structure FS.

[0034] As shown in FIG. 1, in the intermediate state S1 of the airflow generation chip AFC, the membrane structure FS (flap pair FP) is actuated and maintained in a first posture that is substantially horizontal in cross-sectional view, and the vent opening OPV can be temporarily closed (or temporarily sealed) such that it is difficult for air to pass through the space between the both side walls of the slit SL. In FIG. 1, the both side walls of the slit SL (i.e., the free edges of the first flap FL1 and the free edges of the second flap FL2) partially or completely overlap in the horizontal direction (the gap of the slit SL is shown in FIG. 1), thereby closing the vent opening OPV to have a larger flow resistance.

[0035] In FIG. 1, since the size of the gap GP of the slit SL (or the width of the slit SL) needs to be sufficiently small, the airflow passing through the gap GP (i.e., the narrow channel) can be significantly attenuated by the viscous force / resistance along the wall of the airflow passage known as the boundary layer effect in the field of fluid dynamics. Therefore, the airflow flowing through the gap GP in the intermediate state S1 is very small or negligible. That is, when the airflow generation chip AFC is in the intermediate state S1, the vent opening OPV is closed and further sealed. The size of the gap GP of the slit SL (or the width of the slit SL) can be designed based on requirements. For example, the size of the gap GP of the slit SL (or the width of the slit SL) can be, but is not limited to, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm to 2 μm. Note that the size of the vent opening OPV in the intermediate state S1 is equal to the size of the gap GP.

[0036] In FIG. 2, the membrane structure FS (flap pair FP) may be actuated to perform a common mode operation S2 in which the first flap FL1 and the second flap FL2 are simultaneously actuated to move in the same direction. For example, the first flap FL1 and the second flap FL2 may be simultaneously actuated to move upward or downward. For example, at the end of the common mode operation S2, the distance between the first flap FL1 and the first position and the distance between the second flap FL2 and the first position are the same.

[0037] As shown in FIG. 2, when the membrane structure FS (flap pair FP) is actuated to perform the common mode operation S2, the vent opening OPV may be temporarily closed (or temporarily sealed) so that air flow between the two opposing side walls of the slit SL is made difficult. In FIG. 2, the two opposing side walls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) overlap partially or entirely in the horizontal direction to close the vent opening OPV and increase the flow resistance.

[0038] When operating the membrane structure FS (flap pair FP) to perform the common mode operation S2, the vent opening OPV is temporarily closed, increasing the flow resistance. As a result, the air pressures on both sides of the membrane structure FS are different, causing a pressure fluctuation. That is, the membrane structure FS (flap pair FP) performs the common mode operation S2 to form a pressure fluctuation.

[0039] In FIG. 2, the membrane structure FS (flap pair FP) can be operated to perform the differential mode operation S3 by simultaneously operating the first flap FL1 and the second flap FL2 and moving them in opposite directions. For example, (as shown in FIG. 2) the first flap FL1 can be operated to move downward, and the second flap FL2 can be operated to move upward, or the first flap FL1 can be operated to move upward, and the second flap FL2 can be operated to move downward. For example, at the end of the differential mode operation S3, the distance between the first flap FL1 and the first position is the same as the distance between the second flap FL2 and the first position.

[0040] As shown in FIG. 2, when operating the membrane structure FS (flap pair FP) to perform the differential mode operation S3, the vent opening OPV can be temporarily opened so that air can easily pass through the space between the two opposing side walls of the slit SL. In FIG. 2, the two opposing side walls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) are arranged not to overlap in the horizontal direction, and the vent opening OPV is opened to reduce the flow resistance.

[0041] When operating the membrane structure FS (flap pair FP) to perform the differential mode operation S3, if there is a pressure fluctuation between both sides of the membrane structure FS, due to this pressure fluctuation and the reduction of the flow resistance of the vent opening OPV, air can flow naturally through the vent opening OPV, generating an air current and / or an air pulse.

[0042] Therefore, the airflow generation method of this embodiment can generate an airflow and / or an air pulse by operating the membrane structure FS (flap pair FP) to perform the common mode operation S2 and the differential mode operation S3. For example, one period of the airflow generation method of this embodiment may include four steps, although not limited thereto. The first step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to perform the common mode operation S2 so that there is a pressure fluctuation between both sides of the membrane structure FS. The second step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to restore the intermediate state S1. The third step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to perform the operating mode operation S3, and due to this pressure fluctuation and the reduction of the flow resistance of the vent opening OPV, air naturally passes through the vent opening OPV to generate an airflow and / or an air pulse. The fourth step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to restore the intermediate state S1. By repeating the cycle of the airflow generation method of this embodiment, air pulses can continuously form an airflow.

[0043] The frequency of the cycle may be designed based on the pulse repetition number of the air pulse, and the frequency of the cycle can be synchronized with the pulse repetition number of the air pulse. In the present invention, that the frequency / repetition number is synchronized with another frequency / repetition number generally means that this frequency / repetition number is a rational number (i.e., N / M, where N and M represent integers) multiplied by this other frequency / repetition number. In some embodiments, the frequency of the cycle can be the same as the pulse repetition number of the air pulse. In some embodiments, the membrane structure FS (flap pair FP) performs the common mode operation S2 to form an air pressure fluctuation at a pressure fluctuation frequency synchronized with the frequency of the cycle, and the membrane structure FS (flap pair FP) performs the differential mode operation S3 to form the vent opening OPV at an aperture ratio synchronized with the pressure fluctuation frequency and the frequency of the cycle. For example, the frequency of the cycle, the pulse repetition number of the air pulse, the pressure fluctuation frequency, and the aperture ratio are the same. For example, when the airflow generation chip AFC generates air pulses at an ultrasonic rate, the pressure fluctuation frequency and the aperture ratio are synchronized with this ultrasonic rate.

[0044] The direction of the air flow and the air pulse flow is determined by the direction of the common mode operation S2 performed by the membrane structure FS (flap pair FP). When the membrane structure FS (flap pair FP) is actuated to be moved upward (or downward) to perform only one type of common mode operation S2 in the first step of several cycles, since the types of air pressure fluctuations in the first step of these cycles are the same, the direction of the air pulse (third step) flow generated in these cycles is the same. Therefore, the air flow generation chip AFC generates a single-ended (SE) air pulse or an SE raker air pulse. Also, the air pulse may be asymmetric.

[0045] In the present invention, the waveform of the SE air pulse or the waveform of the SE raker air pulse means being (substantially) unipolar with respect to a specific level. For example, the SE air pulse or the SE raker air pulse may mean a waveform that is (substantially) unipolar with respect to the ambient pressure (e.g., 1 ATM). That is, the SE air pulse or the SE raker air pulse constitutes a net air movement or a net air flow in a single direction.

[0046] The air flow generation method of the present invention is not limited to the above. In one period of the air flow generation method, the number of steps and the order of the actuation operations of the membrane structure FS (flap pair FP) can be designed based on requirements.

[0047] In another aspect, for any common mode operation S2 of the flap pair FP, a pair of acoustic pressure waves, one in one space of the membrane structure FS and one in the space on the opposite side of the membrane structure FS, are generated. These two acoustic pressure waves have the same magnitude but opposite polarities. As a result, when the vent opening OPV is opened, the air pressure differences of the two air volumes near the vent opening OPV cancel each other out. Therefore, when the timing at which the differential mode operation S3 reaches its peak (i.e., the timing at which the vent opening OPV is maximized) coincides with the acceleration timing at which the common mode operation S2 reaches its peak, the acoustic pressure that should be generated by the common mode operation S2 is suppressed / removed by the opening of the vent opening OPV, and the two acoustic pressures, having the same magnitude but opposite polarities, are automatically neutralized between the two acoustic pressures on both sides of the membrane structure FS. This means that when the vent opening OPV is opened, the airflow generation chip AFC generates (substantially) a net zero air pressure. Therefore, when the opening period of the vent opening OPV overlaps with one of the (two) polarities of the acceleration of the common mode operation S2 of the flap pair FP, the airflow generation chip AFC generates an SE air pulse or an SE ricker air pulse.

[0048] Furthermore, by matching the opening timing of the vent opening OPV with the acceleration timing of the common mode operation S2 of the flap pair FP, the airflow generation chip AFC can generate an asymmetric air pulse.

[0049] In some embodiments, the membrane structure FS (flap pair FP) can be actuated to perform, without limitation, the common mode operation S2 and the differential mode operation S3 simultaneously. In some embodiments, without limitation, it can include another portion such that the common mode operation S2 and the differential mode operation S3 are performed simultaneously by the membrane structure FS.

[0050] In the present invention, the actuator AT can receive any suitable signal to operate the membrane structure FS. In some embodiments, the membrane structure FS is operated by a modulation drive signal SM to perform a common mode operation S2 to form a pressure fluctuation, and the membrane structure FS is operated by a demodulation drive signal SV to perform a differential mode operation S3 to form a vent opening OPV. Both the modulation drive signal SM and the demodulation drive signal SV are related to the output amplitude of the air pulse.

[0051] Furthermore, the modulation frequency of the modulation drive signal SM and the demodulation frequency of the demodulation drive signal SV are related to the pulse repetition number of the air pulse. For example, the modulation frequency and the demodulation frequency can be synchronized with the pulse repetition number of the air pulse so that, although not limited, the modulation frequency and the demodulation frequency can be synchronized with the pressure fluctuation frequency of the pressure fluctuation, the opening ratio of the vent opening OPV, and the frequency of the period.

[0052] In some embodiments, the actuator AT can receive the modulation drive signal SM and the demodulation drive signal SV at different timings, although not limited. In some embodiments, the actuator AT includes, although not limited, a plurality of parts in a top view, one part can receive the modulation drive signal SM, and another part can receive the demodulation drive signal SV. In some embodiments, the actuator AT includes, although not limited, a first electrode and a second electrode, the first electrode can receive the modulation drive signal SM, and the second electrode can receive the demodulation drive signal SV.

[0053] Furthermore, by controlling the modulation drive signal SM and / or the demodulation drive signal SV, the flow direction of the air flow (air pulse) generated by the air flow generation chip AFC may be made reversible. For details thereof, reference may be made to U.S. Patent Application No. 18 / 624105, where the description is omitted here for the sake of brevity.

[0054] For details of the airflow generating MEMS device (which can be manufactured by semiconductor process), i.e., the airflow generating chip AFC (e.g., structure, driving signals SM / SV and operation) and their design / operation principles, reference can be made to commonly-filed U.S. Patent No. 11943585, U.S. Application No. 18 / 321757 and U.S. Application No. 18 / 624105, the contents of which are hereby incorporated by reference.

[0055] In some embodiments of the present invention, the airflow generating component may be the above airflow generating chip AFC, or the airflow generating component may be a component including the above airflow generating chip AFC. For example, the airflow generating component may be, but is not limited to, a semiconductor component including the above airflow generating chip AFC, an airflow generating package including the above airflow generating chip AFC, or another component including the above airflow generating chip AFC. Some embodiments of a semiconductor component SC including the above airflow generating chip AFC are shown in Figures 3 and 4, and some embodiments of an airflow generating package PG having the above airflow generating chip AFC are shown in Figures 5 to 10, but the semiconductor component and the airflow generating package are not limited to the following embodiments.

[0056] That is, the airflow generation chip AFC may be applied to any embodiment (e.g., airflow package, semiconductor device, electronic device) described in this application or below, and the features and characteristics of the airflow generation chip AFC are included in the embodiments of this application. Note that the semiconductor device is a type of electronic device, and the semiconductor device may be a semiconductor component including the above airflow generation chip AFC or may include an airflow package including the above airflow generation chip AFC.

[0057] Referring to FIG. 3, FIG. 3 is a schematic cross-sectional view showing a semiconductor component provided with an airflow generation chip according to an embodiment of the present invention. As shown in FIG. 3, the semiconductor component SC1 including the above-mentioned airflow generation chip AFC can be formed by a semiconductor manufacturing process. For example, the semiconductor component SC1 can be, but is not limited to, a 2.5-dimensional (2.5D) integrated circuit or a 3-dimensional (3D) integrated circuit (for example, the semiconductor component SC1 shown in FIG. 3 is a 2.5D integrated circuit). For example, a semiconductor device including the semiconductor component SC1 can be, or can be disposed within, a 2.5D semiconductor package, a 3D semiconductor package, or a CoWoS (Chip-on-Wafer-on-SuBstrate) package.

[0058] In the semiconductor component SC1 shown in FIG. 3, the airflow generation chip AFC can be disposed on the base BSS of the semiconductor component SC1. The base BSS of the semiconductor component SC1 can be a chip or an interposer (for example, a wafer layer). For example, the base BSS can include silicon, germanium, any other suitable semiconductor material, or a combination thereof. In FIG. 3, the base BSS can be, but is not limited to, an interposer (for example, a silicon interposer), and a conductive structure CV (for example, a through-silicon via (TSV)) can be disposed within the base BSS and configured to be electrically connected between two electronic elements disposed on both sides of the base BSS.

[0059] In FIG. 3, the base BSS may have an upper surface parallel to the directions X and Y (that is, the upper surface of the base BSS can be a horizontal plane), and the normal direction of the upper surface of the base BSS can be parallel to the direction Z.

[0060] The semiconductor component SC1 may be disposed on the base BSS and further include at least one chip CP adjacent to the airflow generation chip AFC. In FIG. 3, the semiconductor component SC1 includes, but is not limited to, four chips CP1, CP2, CP3, and CP4. Chips CP1 and CP3 are disposed on the base BSS, chip CP2 is disposed (stacked) on chip C1, and is electrically connected to chip CP1 via at least one connection structure CM (e.g., solder or conductive ball). Chip CP4 is disposed (stacked) on chip C3 and may be electrically connected to chip CP3 via at least one connection structure CM (e.g., solder or conductive ball). Note that the airflow generation chip AFC can be used to dissipate the heat generated by the chip CP. Note that this connection structure CM such as solder or conductive ball has a heat conduction effect (i.e., the conductive ball can also be called a heat conductive ball), so it can dissipate heat and enhance the heat dissipation effect of the semiconductor component SC1.

[0061] In the present invention, the semiconductor component SC1 includes at least one first air opening OPS1 and at least one second air opening OPS2. The airflow generated by the airflow generation chip AFC passes through the first air opening OPS1 and the second air opening OPS2. The airflow flows into the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (i.e., one of the first air opening OPS1 and the second air opening OPS2 can be an airflow inlet), and the airflow can flow out of the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (i.e., the other of the first air opening OPS1 and the second air opening OPS2 can be an airflow outlet). In some embodiments, since the direction of the airflow (air pulse) generated by the airflow generation chip AFC is reversible, when the airflow (air pulse) is reversed, the airflow inlet and the airflow outlet are interchanged.

[0062] The first air opening OPS1 and the second air opening OPS2 are designed based on requirements, and the number of the first air opening OPS1 and the number of the second air opening OPS2 can be designed based on requirements. For example, in FIG. 3, the semiconductor component SC1 may include, but is not limited to, one first air opening OPS1 and one second air opening OPS2. The base BSS has the first air opening OPS1 overlapping with the airflow generating chip AFC (i.e., the first air opening OPS1 is formed at the bottom of the airflow generating chip AFC), and the vent opening OPV (i.e., the slit SL) of the airflow generating chip AFC may be the second air opening OPS2 (i.e., the second air opening OPS2 is formed at the top of the airflow generating chip AFC).

[0063] Also, the design of the first air opening OPS1 and the second air opening OPS2 may be related to the airflow path within the semiconductor component SC1. For example, the direction of the airflow passing through the first air opening OPS1 may be parallel or perpendicular to the direction of the airflow passing through the second air opening OPS2, but is not limited thereto (e.g., in FIG. 3, the direction of the airflow passing through the first air opening OPS1 may be parallel to the direction of the airflow passing through the second air opening OPS2).

[0064] Referring to FIG. 4, FIG. 4 is a schematic cross-sectional view showing a semiconductor component provided with an airflow generating chip according to another embodiment of the present invention. As shown in FIG. 4, the difference between this embodiment and the embodiment shown in FIG. 3 is the type of the semiconductor component SC2 in this embodiment. For example, in FIG. 4, the semiconductor component SC2 may be a three-dimensional integrated circuit. The base BSS where the airflow generating chip AFC is disposed (stacked) may be the chip CP and / or the interposer ITP. The airflow generating chip AFC may be electrically connected to the chip CP through at least one connection structure CM (e.g., solder or conductive balls), but is not limited thereto. In FIG. 4, the connection structure CM may be disposed between the airflow generating chip AFC and the chip CP.

[0065] Furthermore, the designs of the first air opening OPS1 and the second air opening OPS2 of this embodiment are different from those of the embodiment shown in FIG. 3. For example, in FIG. 4, the first air opening OPS1 exists between the chip CP (base BSS) and the airflow generation chip AFC, and may be a space formed by the connection structure CM (for example, the first air opening OPS1 is behind the connection structure CM in FIG. 4). The vent opening OPV (i.e., the slit SL) of the airflow generation chip AFC may be the second air opening OPS2. The direction of the airflow passing through the first air opening OPS1 is not limited, but may be perpendicular to the direction of the airflow passing through the second air opening OPS2. Similarly, the first air opening OPS1 is formed on the bottom surface of the airflow generation chip AFC, and the second air opening OPS2 is formed on the upper surface of the airflow generation chip AFC.

[0066] Referring to FIG. 5, FIG. 5 is a schematic cross-sectional view showing four designs of an airflow generation package including an airflow generation chip according to an embodiment of the present invention. Note that the airflow generation chip AFC can be directly mounted on the airflow generation package PG (as shown in FIG. 5), or the airflow generation chip AFC can be a chip of a semiconductor component SC (the 2.5D integrated circuit shown in FIG. 3 or the 3D integrated circuit shown in FIG. 4) mounted on the airflow generation package PG. The airflow generation package PG can be a type of semiconductor device.

[0067] In the present invention, the airflow generation package PG can be applied to any suitable package using any suitable method for mounting the airflow generation chip AFC or the semiconductor component SC together with the airflow generation chip AFC. For example, the airflow generation package PG can be applied to a chip scale package (CSP), a 2.5D semiconductor package, a 3D semiconductor package, a CoWoS package, a ball grid array package (BGA package), or other suitable packages. The structure of the airflow generation package PG and the components included in the airflow generation package PG can correspond to the type of the airflow generation package PG. For example (not shown), the airflow generation chip AFC can be arranged in a flip chip manner, although not limited thereto.

[0068] In the airflow generation package PG shown in FIG. 5, the airflow generation package PG includes a package housing PH in which an airflow generation chip AFC or a semiconductor component SC having the airflow generation chip AFC is disposed, and the airflow generation package PG is protected by the package housing PH. That is, the airflow generation chip AFC is mounted within the package housing PH. Note that within the package housing PH, there are a first cavity CY1 and a second cavity CY2 partitioned by a film structure FS of the airflow generation chip AFC.

[0069] As shown in FIG. 5, the package housing PH of the airflow generation package PG includes a base BSP, the airflow generation chip AFC is disposed on the base BSP, and the first cavity CY1 may exist between the base BSP and the film structure FS of the airflow generation chip AFC. The base BSP may be rigid or flexible, and the base BSP may include glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide (PI), polyethylene terephthalate (PET)), any other suitable material, or a combination thereof. As an example, the base BSP may be, but is not limited to, a circuit board including a laminate (e.g., a copper-clad laminate, CCL), a land grid array (LGA) substrate, or any other suitable substrate including a conductive material.

[0070] In FIG. 5, the base BSP may have an upper surface parallel to the directions X and Y (i.e., the upper surface of the base BSP may be a horizontal plane), and the normal direction of the upper surface of the base BSP may be parallel to the direction Z.

[0071] In the present invention, an airflow generation chip AFC or a semiconductor component SC having the airflow generation chip AFC can be electrically connected to a conductive element in a base BSP via at least one connection structure having a conductive material. The connection structure can be, but is not limited to, solder, a conductive ball (e.g., a conductive ball used in a BGA package), or other suitable structures. Note that this connection structure such as solder or a conductive ball can have a heat conduction effect, and thus can assist in heat dissipation to enhance the heat dissipation effect of the airflow generation package PG.

[0072] As shown in FIG. 5, a package housing PH of the airflow generation package PG can include a coating structure CSV for covering and protecting an airflow generation chip AFC or a semiconductor component SC having the airflow generation chip AFC. A second cavity CY2 can exist between the coating structure CSV and a film structure FS of the airflow generation chip AFC. In FIG. 5, the coating structure CSV may be disposed on the base BSP, and the airflow generation chip AFC can be disposed between the base BSP and the coating structure CSV. For example, the coating structure CSV can include glass, plastic, quartz, sapphire, metal, polymer, any other suitable material, or a combination thereof (e.g., the coating structure CSV shown in FIG. 5 can include metal) or the coating structure CSV can be a metal lid.

[0073] In FIG. 5, the coating structure CSV includes a top CSVt and at least one side wall CSVw, and the side wall CSVw is between the base BSP and the top CSVt. For example (as shown in FIG. 5), the coating structure CSV including the top CSVt and the side wall CSVw can be, but is not limited to, a one-piece structure (e.g., a cap). For example (as shown in FIG. 5), the base BSP and the top CSVt may be substantially parallel to each other, and the side wall CSVw can, but is not limited to, surround the airflow generation chip AFC.

[0074] In the present invention, the package housing PH of the airflow generation package PG may have a plurality of air openings OPP, and the airflow generated by the airflow generation chip AFC can pass through the air openings OPP. In some embodiments, the package housing PH may have at least one air opening OPP1 connected to the first cavity CY1 and at least one air opening OPP2 connected to the second cavity CY2. The airflow can flow into the airflow generation package PG through the air opening OPP1 or the air opening OPP2 (i.e., one of the air opening OPP1 and the air opening OPP2 can be an airflow inlet), and the airflow can flow out of the airflow generation package PG through the air opening OPP1 or the air opening OPP2 (i.e., the other of the air opening OPP1 and the air opening OPP2 can be an air outlet). In some embodiments, since the direction of the airflow (air pulse) generated by the airflow generation chip AFC is reversible, when the airflow (air pulse) is reversed, the airflow inlet and the airflow outlet are interchanged.

[0075] In some embodiments, the base BSP and the coating structure CSV may be made of the same material. That is, the base BSP can be regarded as a part of the coating structure CSV or the coating structure CSV can be regarded as a part of the base BSP. Both the base BSP and the coating structure CSV can be regarded as a part of the package housing PH.

[0076] The air opening OPP can be formed on the upper surface, the bottom surface or the side wall of the package housing PH. In this embodiment, the air openings OPP1 and OPP2 are designed based on requirements, and the number of the air openings OPP1 and the number of the air openings OPP2 can be designed based on requirements. The design of the air openings OPP1 and OPP2 can be related to the airflow path in the airflow generation package PG. For example, the direction of the airflow passing through the air opening OPP1 can be parallel or perpendicular to the direction of the airflow passing through the air opening OPP2, although not limited. Hereinafter, four designs of the airflow generation package PG shown in FIG. 5 will be described.

[0077] In the first design DS1 of the airflow generation package PG shown in FIG. 5, although not limited, the base BSP has one air opening OPP1 overlapping with the airflow generation chip AFC, the top CSVt of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be parallel to the direction of the airflow passing through the air opening OPP2.

[0078] In the second design DS2 of the airflow generation package PG shown in FIG. 5, although not limited, the base BSP has one air opening OPP1 overlapping with the airflow generation chip AFC, the side wall CSVw of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be perpendicular to the direction of the airflow passing through the air opening OPP2.

[0079] In the third design DS3 of the airflow generation package PG shown in FIG. 5, although not limited, the side wall CSVw of the base BSP has an air opening OPP1, the airflow generation chip AFC (for example, the anchor structure AR of the airflow generation chip AFC) has an airflow path AL connected between the air opening OPP1 and the first cavity CY1, the top CSVt of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be perpendicular to the direction of the airflow passing through the air opening OPP2. During the operation of the airflow generation package PG, the airflow passes through the airflow path AL, and the flow direction of the airflow in the airflow path AL is perpendicular to the direction Z (for example, the normal direction of the base BSP or the normal direction of the film structure FS).

[0080] In the fourth design DS4 of the airflow generation package PG shown in FIG. 5, although not limited, the side surface of the base BSP has an air opening OPP1, the base BSP has an empty structure EP connected between the air opening OPP1 and the first cavity CY1, the top CSVt of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be perpendicular to the direction of the airflow passing through the air opening OPP2. For example, the empty structure EP can be, although not limited to, an air flow path (e.g., the structure shown in FIG. 6), a chamber (e.g., the structure shown in FIG. 7), or other suitable structures. It should be noted that during the operation of the airflow generation package PG, the airflow passes through an air flow path (i.e., a kind of empty structure EP), and the flow direction of the airflow in the air flow path is perpendicular to the direction Z (e.g., the normal direction of the base BSP or the normal direction of the film structure FS). It should be noted that during the operation of the airflow generation package PG, the airflow may or may not pass through a chamber (i.e., a kind of empty structure EP).

[0081] In the present invention, the airflow generation package PG is not limited to the above four designs shown in FIG. 5. FIGS. 6 to 10 show modification examples of the above four designs.

[0082] In FIG. 6 showing a modification example of the fourth design DS4 of the airflow generation package PG1, the base BSP can be an air flow path AL and has an empty structure EP connected between the air opening OPP1 and the first cavity CY1. Further, the top CSVt of the covering structure CSV can have, although not limited to, a plurality of air openings OPP2. Further, in FIG. 6, although not limited to, the airflow generation chip AFC can include a plurality of film structures FS to increase the airflow generated by the airflow generation chip AFC, and each film structure FS can include a plurality of flap pairs FP (in one film structure FS shown in FIG. 6, three flaps FL belonging to three different flap pairs FP are shown respectively).

[0083] In FIG. 6, the airflow generation package PG1 can be disposed on or in direct contact with the surface SF of a heat source or a heat sink to assist in the dissipation of the heat of the heat source / heat sink.

[0084] In FIG. 7 showing another modification of the fourth design DS4 of the airflow generation package PG2, the base BSP may be a chamber CHB in order to increase the airflow generated by the airflow generation chip AFC, and may have an empty structure EP connected between the air opening OPP1 and the first cavity CY1. For example, the base BSP may be an integral structure or may be formed of a plurality of sub-structures (for example, a plurality of substrates). In FIG. 7, the empty structure EP (i.e., the chamber) is formed on the side of the membrane structure FS, and the air opening OPP1 is formed on the side wall BSPw of the base BSP.

[0085] That is, the airflow generation package PG2 may have a larger back volume due to the chamber CHB. By appropriately designing the size or dimensions of the chamber CHB, Helmholtz resonance (HHR) is formed in the chamber CHB (or in the back volume of the airflow generation package PG2), ultrasonic acoustic characteristics are obtained in the airflow generation package PG2, and it becomes more advantageous in generating airflow.

[0086] In FIG. 8 showing a modification of the second design DS2 of the airflow generation package PG3, the airflow generation package PG3 has a plurality of airflow generation chips AFC1 and AFC2. The airflow generation chip AFC1 may be connected to the base BSP, and the airflow generation chip AFC2 may be connected to the covering structure CSV. For example, the airflow generation chips AFC1 and AFC2 may overlap in the direction Z (for example, the airflow generation chips AFC1 and AFC2 may be stacked on top of each other). In FIG. 8, the first cavity CY1_1 exists between the base BSP and the airflow generation chip AFC1, the first cavity CY1_2 exists between the covering structure CSV and the airflow generation chip AFC2, and the second cavity CY2 may exist between the two airflow generation chips AFC1 and AFC2.

[0087] As shown in FIG. 8, the package housing PH may have a plurality of air openings OPP1 connected to the first cavities CY1_1 and CY1_2, and at least one air opening OPP2 connected to the second cavity CY2. For example, in the airflow generation package PG3, but not limited to, the base BSP has one air opening OPP1 overlapping the airflow generation chip AFC1 and connected to the first cavity CY1_1, and the top CSVt of the covering structure CSV has another air opening OPP1 overlapping the airflow generation chip AFC2 and connected to the first cavity CY1_2. The two side walls CSVw of the covering structure CSV are opposite to each other and have two air openings OPP2 connected to the second cavity CY2. The direction of the airflow passing through the air opening OPP1 may be configured to be orthogonal to the direction of the airflow passing through the air opening OPP2.

[0088] In FIG. 8 showing a modification of the second design DS2 of the airflow generation package PG3', but not limited to, compared with the airflow generation package PG3, the side wall CSVw of the covering structure CSV of the airflow generation package PG3' may have one air opening OPP2.

[0089] In the airflow generation package PG3 (its modification) and the airflow generation package PG3' (its modification), the side wall CSVw of the covering structure CSV may be the side wall of the package housing PH, and the top CSVt and the base BSP of the covering structure CSV may be the top and the bottom of the package housing PH, respectively.

[0090] In the airflow generation package PG3 (its modification) and the airflow generation package PG3' (its modification), the flip-chip method may be used for the airflow generation chip AFC1 and / or the airflow generation chip AFC. For example, one of the airflow generation chips AFC1 and AFC2 may be arranged in the flip-chip method, but not limited to.

[0091] The configuration of FIG. 8 having two or more stacked airflow generation chips and useful for increasing the total air volume of the airflow generated by the airflow generation package is within the scope of the present application.

[0092] In FIG. 9, which shows another modification of the second design DS2 of the airflow generation package PG4, the airflow generation package PG4 may have a plurality of package units PU1 and PU2 connected to each other. The package unit PU1 includes at least one airflow generation chip AFC (for example, two airflow generation chips AFC1 and AFC2 in FIG. 9), a base BSP1, and a coating structure CSV1, and the package unit PU2 may include at least one airflow generation chip AFC (for example, two airflow generation chips AFC3 and AFC4 in FIG. 9), a base BSP2, and a coating structure CSV2. For example, but not limited to, the bases BSP1 and BSP2 are between the two coating structures CSV1 and CSV2, and the conductive elements in the base BSP1 may be electrically connected to the conductive elements in the base BSP2 via at least one connection structure CM having a conductive material (for example, solder or a conductive ball). In FIG. 9, the airflow generation chips AFC1, AFC2, AFC3, and AFC4 may overlap in the direction Z, but are not limited to this.

[0093] As shown in FIG. 9, the package housing PH may have a plurality of air openings OPP1 connected to the first cavities CY1_1, CY1_2, CY1_3, and CY1_4, and a plurality of air openings OPP2 connected to the second cavities CY2_1 and CY2_2. For example, but not limited to, one air opening OPP1 exists between the bases BSP1 and BSP2 and is connected to the first cavities CY1_1 and CY1_3 (this air opening OPP1 is formed by thinning the bases BSP1 and BSP2), the covering structure CSV1 overlaps the airflow generation chip AFC2 and has another air opening OPP1 connected to the first cavity CY1_2, the covering structure CSV2 overlaps the airflow generation chip AFC4 and has yet another air opening OPP1 connected to the first cavity CY1_4, the covering structure CSV1 has one air opening OPP2 connected to the second cavity CY2_1, the covering structure CSV2 has another air opening OPP2 connected to the second cavity CY2_2, and the direction of the airflow passing through one of the air openings OPP1 may be configured to be parallel or perpendicular to the direction of the airflow passing through the air opening OPP2. Therefore, in FIG. 9, since the number of the airflow generation chips AFC is increased, the airflow generated by the airflow generation chip AFC increases.

[0094] In FIG. 10, which shows yet another variant of the second design DS2 of the airflow generation package PG5, the airflow generation package PG5 may further include a heat dissipation structure TP connected to the covering structure CSV in order to enhance the heat dissipation effect by the airflow generation package PG5. In some embodiments, the heat dissipation structure TP may be disposed outside the covering structure CSV or inside the covering structure CSV (for example, the heat dissipation structure TP may be disposed outside the covering structure CSV in FIG. 10). For example, in FIG. 10, the heat dissipation structure TP may have, without limitation, a plurality of heat dissipation units dispersed on the covering structure CSV. In some embodiments, the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be notches or protrusions (or projections) of the covering structure CSV (for example, the heat dissipation structure TP and the covering structure CSV may form an integral structure shown in FIG. 28) or the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be adhered to the covering structure CSV (for example, the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be a heat sink, a heat spreader, etc.).

[0095] In the present invention, an airflow generation component (for example, an airflow generation chip AFC, a semiconductor component SC including the airflow generation chip AFC, or an airflow generation package PG including the airflow generation chip AFC) is used in an apparatus DV, and the airflow generated by the airflow generation component (that is, the airflow generation chip AFC) may be configured to dissipate the heat generated by the components within this apparatus DV. Therefore, the heat dissipation of the apparatus DV can be improved by the airflow generated by the airflow generation component. For example, the apparatus DV may be an electronic device (such as a smartphone, a tablet, or other suitable electronic device, etc.). Some embodiments of the apparatus DV including the airflow generation component are shown in FIGS. 11 to 17. The airflow generation components shown in FIGS. 11 to 17 are airflow generation packages PG including the airflow generation chip AFC, but the apparatus DV is not limited to the following embodiments.

[0096] Referring to FIG. 11, FIG. 11 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a first embodiment of the present invention. In FIG. 11, the airflow generation package PG shown in FIG. 11 may be a modified example belonging to the first design DS1 shown in FIG. 5, and is not limited thereto. The base BSP has one air opening OPP1, and the top CSVt of the covering structure CSV has a plurality of air openings OPP2. The direction of the airflow passing through the air opening OPP1 can be configured to be parallel to the direction of the airflow passing through the air opening OPP2.

[0097] As shown in FIG. 11, the apparatus 100 includes a heat source (or operating component) 110. The heat source (operating component) 110 generates heat during operation, and the airflow generation package PG within the apparatus 100 is configured to generate an airflow to dissipate the heat emitted by the heat source 110. In the present invention, the heat source 110 can be any suitable component that can generate heat during operation. For example, the heat source 110 may be an operating component formed by a semiconductor manufacturing process (i.e., the operating component may be called a heat-generating chip), and the operating component can be, but is not limited to, a chip, a 2.5D integrated circuit, or a 3D integrated circuit. For example, the operating component can be, but is not limited to, an application processor (AP), a central processing unit (CPU), a graphics processing unit (GPU), a tensor processing unit (TPU) which is generally an XPU, or a memory. For example, the normal direction of the upper surface of the heat source 110 can be parallel to the direction Z, but is not limited thereto.

[0098] In the present invention, the reference numeral "110" can be used to indicate a heat source, a heat-generating chip, and an operating component. The terms "heat source", "heat-generating chip", and "operating component" are used interchangeably.

[0099] As shown in FIG. 11, the apparatus 100 may include a heat conduction component 120 that is disposed adjacent to the heat source 110 and configured to conduct heat emitted by the heat source 110. For example, the heat source 110 may be connected to the heat conduction component 120 to enhance the heat dissipation effect (e.g., heat dissipation efficiency). The heat conduction component 120 may be any suitable component for conducting heat. For example, the heat conduction component 120 may include, but is not limited to, a heat sink, a heat spreader, a thermal interface material, an interposer, a heat pipe, a vapor chamber, other suitable components, or a combination thereof (e.g., the heat conduction component 120 shown in FIG. 11 may be a heat spreader).

[0100] As shown in FIG. 11, the airflow generation package PG (i.e., the airflow generation component) may be disposed adjacent to the heat conduction component 120 such that heat emitted by the heat source 110 can be dissipated by the airflow generated by the heat conduction component 120 and the airflow generation package PG. In some embodiments, the airflow generation package PG may be disposed on or over the heat source 110 and / or the heat conductive component 120 such that the membrane structure FS of the airflow generation package PG can generate an airflow for dissipating heat from the heat source 110 and / or the heat conduction component 120. For example, in FIG. 11, the airflow generation package PG may be disposed so as to overlap, but is not limited to, on the heat conduction component 120. For example, in FIG. 11, the membrane structure FS of the airflow generation package PG may face the heat conduction component 120. For example, in FIG. 11, the covering structure CSV of the airflow generation package PG may be disposed, but is not limited to, between the heat conduction component 120 and the membrane structure FS. For example, in FIG. 11, the heat source 110 and the airflow generation package PG may be disposed on the same side of the heat conduction component 120.

[0101] In this embodiment, the heat generated by the heat source 110 is first conducted and dissipated by the heat conduction component 120, and then cold air flows into the device 100 by the airflow generated by the airflow generation package PG, and hot air flows out of the device 100 to dissipate the heat of the heat conduction component 120. In FIG. 11, the airflow generation package PG can be configured to dissipate some of the heat of the heat conduction component 120 that overlaps the airflow generation package PG, although not limited thereto.

[0102] As shown in FIG. 11, the device 100 includes an outer casing 130 in which a heat source 110, a heat conduction component 120, and an airflow generation package PG (i.e., an airflow generation component) are arranged, and the heat conduction component 120 and the airflow generation package PG can be protected by the outer casing 130. In FIG. 11, the outer casing 130 can be the outermost structure of the device 100.

[0103] In this embodiment, in order to enhance the heat dissipation effect of the heat conduction component 120, the heat conduction component 120 can be arranged in a wide range within the outer casing 130. Further, due to the presence of the heat conduction component 120, the design of the positions of the heat source 110 and the airflow generation package PG is flexible. For example, in FIG. 11, although not limited thereto, the heat source 110 and the airflow generation package PG are arranged in different regions within the outer casing 130 and do not overlap in the Z direction (for example, the heat source 110 and the airflow generation package PG can be separated by the spacer 140 in FIG. 11), and the heat generated by the heat source 110 can be dissipated by the airflow generation package PG through the heat conduction component 120. Note that the spacer 140 that separates the airflow generation package PG and the heat source 110 prevents the airflow (direction) from becoming too diverse and helps to enhance the efficiency and effect of heat dissipation. For example, in FIG. 11, the airflow generation package PG is arranged by (or adjacent to) the edge of the device 100, and the heat conduction component 120 can extend from the heat source 110 toward the airflow generation package PG such that the airflow generated by the airflow generation package PG flows through the heat conduction component 120.

[0104] In FIG. 11, the outer casing 130 may include at least one first casing opening 132 associated with the air opening OPP1 and at least one second casing opening 134 associated with the air opening OPP2. The airflow generated by the airflow generation chip AFC in the airflow generation package PG passes through the first casing opening 132 and the second casing opening 134. The airflow flows into the device 100 through the first casing opening 132 or the second casing opening 134 (i.e., one of the first casing opening 132 and the second casing opening 134 can be the airflow inlet of the device), and the airflow flows out of the device 100 through the first casing opening 132 or the second casing opening 134 (i.e., the other of the first casing opening 132 and the second casing opening 134 can be the airflow outlet of the device). The first casing opening 132 and the second casing opening 134 are arranged by the same edge or different edges of the device 100. Since the flow direction of the airflow generated by the airflow generation chip AFC in the airflow generation package PG is reversible, when the airflow is reversed, the airflow inlet of the device and the airflow outlet of the device are reversed.

[0105] In the first flow direction of the airflow in the device 100, the airflow passes through the first casing opening 132, the air opening OPP1, the membrane structure FS of the airflow generation chip AFC, the air opening OPP2, and the second casing opening 134 in sequence. In the second flow direction of the airflow in the device 100, the airflow passes through the second casing opening 134, the air opening OPP2, the membrane structure FS of the airflow generation chip AFC, the air opening OPP1, and the first casing opening 132 in sequence.

[0106] The first casing opening 132 and the second casing opening 134 are designed based on requirements. The number of the first casing openings 132 and the number of the second casing openings 134 are designed based on requirements. The design of the first casing opening 132 and the second casing opening 134 may be related to the airflow path within the device 100. For example, the direction of the airflow passing through the first casing opening 132, although not limited, may be parallel or perpendicular to the direction of the airflow passing through the second casing opening 134 (in FIG. 11, the direction of the airflow passing through the first casing opening 132 may be parallel to the direction of the airflow passing through the second casing opening 134).

[0107] The direction of the airflow passing through the air opening OPP1, the direction of the airflow passing through the air opening OPP2, the direction of the airflow passing through the first casing opening 132, and the direction of the airflow passing through the second casing opening 134 may be designed based on requirements. For example, the direction of the airflow passing through the air opening OPP1 and the direction of the airflow passing through the air opening OPP2, although not limited, may be perpendicular to the direction of the airflow passing through the first casing opening 132 and the direction of the airflow passing through the second casing opening 134).

[0108] Referring to FIG. 12, FIG. 12 is a schematic cross-sectional view showing a device including a heat source and an airflow generation chip according to a second embodiment of the present invention. The airflow generation package PG shown in FIG. 12 may be a modification belonging to the first design DS1 shown in FIG. 5. As shown in FIG. 12, the difference between this embodiment and the embodiment shown in FIG. 11 lies in the type of the heat conduction component 120 of the device 200. In FIG. 12, the heat conduction component 120 may be a heat pipe or a vapor chamber, and a space 122 filled with a liquid and / or a gas exists within the heat conduction component 120).

[0109] As shown in FIG. 12, the difference between this embodiment and the embodiment shown in FIG. 11 is the position of the first casing opening 132. Therefore, the directions of the airflows passing through the air openings OPP1, OPP2, and the first casing opening 132 are not limited, but can be perpendicular to the direction of the airflow passing through the second casing opening 134.

[0110] Referring to FIG. 13, FIG. 13 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generating chip according to a third embodiment of the present invention. The airflow generating package PG shown in FIG. 13 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 13, the difference between this embodiment and the embodiment shown in FIG. 11 is the position of the heat source 110 of the apparatus 300. In FIG. 13, the heat source 110, the heat conduction component 120, and the airflow generating package PG (i.e., the airflow generating component) may overlap in the Z direction, and the heat conduction component 120 may be disposed between the heat source 110 and the airflow generating package PG in the Z direction. Further, in FIG. 13, the base BSP of the airflow generating package PG may be disposed between the heat conduction component 120 and the membrane structure FS, although not limited thereto.

[0111] Referring to FIG. 14, FIG. 14 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generating chip according to a fourth embodiment of the present invention. The airflow generating package PG shown in FIG. 14 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 14, the difference between this embodiment and the embodiment shown in FIG. 11 is that the heat conduction component 120 is connected to the covering structure CSV of the airflow generating package PG of the apparatus 400 so that the heat of the heat conduction component 120 is directly conducted to the airflow generating package PG. For example, the heat conduction component 120 may be adhered to the covering structure CSV of the airflow generating package PG via a material having a high thermal conductivity such as a thermal interface material (TIM) (not shown in FIG. 14), although not limited thereto. The thermal interface material (TIM) can be or include thermal grease, thermal gel, thermal pad, phase change material (PCM), phase change metal alloy (PCMA), and thermally conductive adhesive.

[0112] Referring to FIG. 15, FIG. 15 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a fifth embodiment of the present invention. The airflow generation package PG shown in FIG. 15 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 15, the difference between this embodiment and the embodiment shown in FIG. 14 lies in the position of the heat source 110 of the apparatus 500. In FIG. 15, the heat source 110, the heat conduction component 120, and the airflow generation package PG (i.e., the airflow generation component) may overlap in the Z direction, and the heat conduction component 120 may be disposed between the heat source 110 and the airflow generation package PG in the Z direction.

[0113] As shown in FIG. 15, the difference between this embodiment and the embodiment shown in FIG. 14 lies in the position of the first casing opening 132 of the apparatus 500. Therefore, although not limited, the directions of the airflow passing through the air opening OPP1, the airflow passing through the air opening OPP2, and the airflow passing through the first casing opening 132 may be perpendicular to the direction of the airflow passing through the second casing opening 134.

[0114] Referring to FIG. 16, FIG. 16 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a sixth embodiment of the present invention. The airflow generation package PG shown in FIG. 16 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 16, the difference between this embodiment and the embodiment shown in FIG. 15 is that the airflow generation package PG of the apparatus 600 has a heat dissipation structure TP connected to the covering structure CSV, and the heat dissipation structure TP is disposed inside the covering structure CSV to enhance the heat dissipation effect by the airflow generation package PG. For example, in FIG. 16, the heat dissipation structure TP may have, although not limited to, a plurality of heat dissipation units dispersed on the covering structure CSV.

[0115] Referring to FIG. 17, FIG. 17 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a seventh embodiment of the present invention. The airflow generation package PG shown in FIG. 17 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 17, the difference between this embodiment and the embodiment shown in FIG. 15 is the design of the heat conduction component 120 of the apparatus 700. In FIG. 17, the heat conduction component 120 may completely overlap the airflow generation package PG in the Z direction, and the heat source 110 may be connected to the covering structure CSV of the airflow generation package PG via the heat conduction component 120. For example, the heat conduction component 120 may include, but is not limited to, a heat sink, a heat spreader, a thermal interface material, an interposer, or a combination thereof. Further, in FIG. 17, the heat source 110 may be disposed on the substrate 710 (e.g., a circuit board) such that the heat source 110 is disposed between the substrate 710 and the heat conduction component 120.

[0116] Hereinafter, a miniaturized apparatus DV is provided. For example, the following apparatus DV may be a semiconductor device which is a kind of electronic device. The semiconductor device may be formed by a semiconductor manufacturing process (the semiconductor manufacturing process includes a packaging process), and the size of the semiconductor device may be the same as or similar to the size of the semiconductor package structure. Some embodiments of the apparatus DV which is a semiconductor device are shown in FIGS. 18 to 23, but the apparatus DV is not limited to the following embodiments.

[0117] Referring to FIG. 18, FIG. 18 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to an eighth embodiment of the present invention. The airflow generation component can be an airflow generation package PG including an airflow generation chip AFC (see the above for details of the airflow generation package PG). In the apparatus 800 shown in FIG. 18, the airflow generation package PG including the airflow generation chip AFC is disposed on the heat source 110 and can overlap in the Z direction. Note that the apparatus 800 can be considered a type of semiconductor device in which the airflow generation chip AFC and the operating component (heat source 110) are manufactured through a semiconductor manufacturing process. The operating component (heat source 110) can be or include an application processor (AP for a mobile device such as a smartphone or a tablet computer), a central processing unit (CPU), a graphics processing unit (GPU), a tensor processing unit (TPU), or a memory that generates heat during operation. The operating component can be considered a type of heat source 110.

[0118] Optionally, the apparatus 800 can include a heat conduction component 120 disposed between the airflow generation package PG and the heat source 110 to enhance the heat dissipation effect. For example, the heat conduction component 120 can include, but is not limited to, a heat sink, a heat spreader, a thermal interface material, an interposer, or a combination thereof. In some embodiments, the heat source 110 can be connected to the airflow generation package PG through the heat conduction component 120 (for example, the heat source 110, the heat conduction component 120, and the airflow generation package PG (or the airflow generation chip AFC) can overlap in the Z direction). For example, the heat source 110 can be adhered to the airflow generation package PG through the heat conduction component 120, but is not limited thereto.

[0119] In FIG. 18, the device 800 may have at least one first device opening 802 and at least one second device opening 804. Further, an air flow path 806 is formed between the operating component (heat source 110) and the air flow generating chip AFC. The air flow generated by the air flow generating chip AFC of the air flow generating package PG passes through the air flow path 806, the first device opening 802, and the second device opening 804. The air flow flows into the device 800 through the first device opening 802 or the second device opening 804 (i.e., one of the first device opening 802 and the second device opening 804 may be the device air inlet), and the air flow flows out of the device 800 through the first device opening 802 or the second device opening 804 (i.e., the other of the first device opening 802 and the second device opening 804 may be the device air outlet), and can dissipate the heat generated by the heat source 110 (operating component). Since the flow direction of the air flow generated by the air flow generating chip AFC of the air flow generating package PG is reversible, when the air flow is reversed, the device air inlet and the device air outlet are reversed.

[0120] For example, but not limited to, the first device opening 802 may be the air opening OPP1 of the package housing PH of the air flow generating package PG, and the second device opening 804 may be the air opening OPP2 of the package housing PH of the air flow generating package PG. For example, the first device opening 802 or the second device opening 804 is located between the air flow generating package PG and the heat source 110 and may not belong to the air flow generating package PG, although not limited to this.

[0121] An example of an apparatus 800’ belonging to the design shown in FIG. 18 is shown in FIG. 19, and the airflow generation package PG shown in FIG. 19 is a variant belonging to the second design DS2 shown in FIG. 5. As shown in FIG. 19, the airflow generation chip AFC may include a plurality of membrane structures FS. For simplicity, in FIG. 19, the anchor structure AR within the airflow generation chip AFC is omitted. Additionally, the base BSP may have a plurality of air openings OPP1 that overlap the membrane structure FS of the airflow generation chip AFC, the side wall CSVw of the covering structure CSV may have one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 may be configured to be orthogonal to the direction of the airflow passing through the air opening OPP2. In FIG. 19, the first device opening 802 may be the air opening OPP1 of the airflow generation package PG, and the second device opening 804 may be the air opening OPP2 of the airflow generation package PG.

[0122] In FIG. 19, the covering structure CSV of the airflow generation package PG is between the heat source 110 and the base BSP of the airflow generation package PG, and the heat source 110 may be connected to the covering structure CSV of the airflow generation package PG via a heat conduction component 120 (for example, the heat conduction component 120 may be in direct contact with the heat source 110 and the covering structure CSV).

[0123] Furthermore, the cavity surrounded by the covering structure CSV may form an air flow path 806’. That is, the air flow path 806’ is formed between the operating component (heat source 110) and the airflow generation chip AFC. Similarly, the airflow generated by the airflow generation chip AFC flows through the air flow path 806’ and the air openings OPP1 and OPP2, and dissipates the heat emitted by the operating component (heat source 110).

[0124] Referring to FIG. 20, FIG. 20 is a schematic cross-sectional view showing an apparatus including a heat source and an air flow generation chip according to a ninth embodiment of the present invention. The apparatus 900 is a semiconductor device that is an air flow generation package or a package. The air flow generation component is the air flow generation chip AFC. In FIG. 20, the apparatus 900, which is an air flow generation package, is similar to the second design DS2 of the air flow generation package PG shown in FIG. 5 (it should be noted that the apparatus 900 can be similar to any design and / or any example of the air flow generation package PG described above). The base BSP has one air opening OPP1 that overlaps the film structure FS of the air flow generation chip AFC, and the side wall CSVw of the covering structure CSV has one air opening OPP2.

[0125] The positions of the air flow generation chip AFC and the heat source 110 can be designed based on requirements. The air flow generation chip AFC can be arranged adjacent to the heat source 110 (that is, the air flow generation chip AFC can be above, below the heat source 110 or arranged by the heat source). For example, in FIG. 20, without limitation, the air flow generation chip AFC and the heat source 110 can be arranged on both sides of the base BSP respectively, and the air flow generation chip AFC can be between the base BSP and the covering structure CSV. For example, the air flow generation chip AFC, without limitation, may not overlap the heat source 110 in the direction Z.

[0126] Optionally, the device 900 (i.e., the package) may include a fin-type heat conduction component 120' (a type of heat conduction component 120) disposed at any suitable position to enhance the heat dissipation effect. For example, the fin-type heat conduction component 120' may include, but is not limited to, a heat sink. In some embodiments, the fin-type heat conduction component 120' is disposed on the heat source 110 to obtain the heat generated by the heat source 110 (e.g., the fin-type heat conduction component 120' may be connected to or in contact with the heat source 110), and the fin-type heat conduction component 120' may pass through the base BSP so that the heat of the fin-type heat conduction component 120' is dissipated by the airflow generated by the airflow generation chip AFC (e.g., the airflow flows through the fin-type heat conduction component 120' and is configured to dissipate heat from the heat source 110).

[0127] Note that the fin-type means increasing the surface area to enhance heat dissipation, and the fin-type heat sink or heat conduction component is for illustrative purposes only and is not limited thereto. The fin-type heat conduction component 120' may include any type of heat sink or heat conduction component with a non-smooth surface (e.g., a heat sink or heat conduction component with regular or irregular protrusions).

[0128] Referring to FIG. 21, FIG. 21 is a schematic cross-sectional view showing a device including a heat source and an airflow generation chip according to the tenth embodiment of the present invention. The device 1000 is a semiconductor device that is an airflow generation package or a package, and the airflow generation component is the airflow generation chip AFC. In the device 1000 (i.e., the package) shown in FIG. 21, the device 1000 is similar to the fourth design DS4 of the airflow generation package PG shown in FIG. 5. The side surface of the base BSP has a plurality of air openings OPP1, and the top CSVt of the covering structure CSV has one air opening OPP2.

[0129] Similar to the embodiment shown in FIG. 20, the airflow generation chip AFC and the heat source 110 are respectively arranged on both sides of the base BSP. The airflow generation chip AFC is between the base BSP and the covering structure CSV, and the fin-type heat conduction component 120' is arranged on the heat source 110 and can penetrate the base BSP.

[0130] In FIG. 21, the airflow generation chip AFC, the fin-type heat conduction component 120', and the heat source 110 may overlap in the Z direction, and the fin-type heat conduction component 120' can be arranged between the airflow generation chip AFC and the heat source 110. For example (as shown in FIG. 21), the fin-type heat conduction component 120' can be, but is not limited to, the wall of the hollow structure EP.

[0131] Referring to FIG. 22, FIG. 22 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip AFC according to the 11th embodiment of the present invention. The apparatus 1100 is a semiconductor device that is an airflow generation package or a package, and the airflow generation component is the airflow generation chip AFC. In the apparatus 1100 (i.e., the package) shown in FIG. 22, the apparatus 1100 may include a plurality of airflow generation chips AFC1 and AFC2 arranged on the base BSP, and the airflow generation chip AFC1 can be arranged by the airflow generation chip AFC2. In FIG. 22, the base BSP may have an air opening OPP1 overlapping the airflow generation chip AFC1 and an air opening OPP2 overlapping the airflow generation chip AFC2, and the direction of the airflow passing through the air opening OPP1 can be configured to be parallel to the direction of the airflow passing through the air opening OPP2. Note that the flow direction of the airflow generated by the airflow generation chip AFC1 is opposite to the flow direction of the airflow generated by the airflow generation chip AFC2.

[0132] Similar to the embodiment shown in FIG. 20, the airflow generation chip AFC and the heat source 110 may be respectively arranged on both sides of the base BSP, the airflow generation chip AFC may be arranged between the base BSP and the covering structure CSV, and the fin-type heat conduction component 120' may be arranged on the heat source 110 and may pass through the base BSP. For example, the airflow generation chip AFC may, but is not limited to, not overlap the heat source 110 in the Z direction.

[0133] In FIG. 22, the heat source 110 and the fin-type heat conduction component 120' may, but are not limited to, be arranged between the airflow generation chips AFC1 and AFC2 in the horizontal direction (for example, the X direction). For example, but not limited to, the airflow generation chip AFC1 is arranged on the first side of the fin-type heat conduction component 120' and is configured to form an airflow inward, and the airflow generation chip AFC2 is arranged on the second side of the fin-type heat conduction component 120' and may be configured to form an airflow outward.

[0134] Referring to FIG. 23, FIG. 23 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a twelfth embodiment of the present invention. The apparatus 1200 is a semiconductor device that is an airflow generation package or a package, and the airflow generation component is the airflow generation chip AFC. In the apparatus 1200 (i.e., the package) shown in FIG. 23, the apparatus 1200 may include a plurality of airflow generation chips AFC and a plurality of heat sources 110, and the airflow generation chips AFC and the heat sources 110 may be arranged between the base BSP and the covering structure CSV. For example, in FIG. 23, the heat sources 110 may overlap in the Z direction (for example, one heat source 110 may be stacked on another heat source 110 to form a 3D integrated circuit), and the airflow generation chips AFC may also overlap in the Z direction (for example, the airflow generation chip AFC1 may be stacked on the airflow generation chip AFC3, and the airflow generation chip AFC2 may be stacked on the airflow generation chip AFC4). In FIG. 23, the airflow generation chip AFC may, but is not limited to, overlap the heat source 110 in the Z direction.

[0135] In FIG. 23, the heat source 110 and the fin-type heat conduction component 120' can be disposed between two adjacent airflow generating chips AFC in the horizontal direction (e.g., the direction X), although not limited thereto. For example, although not limited thereto, the stacked airflow generating chips AFC1 and AFC3 can be disposed on the first side of the fin-type heat conduction component 120', and the stacked airflow generating chips AFC2 and AFC4 can be disposed on the other side of the fin-type heat conduction component 120'. In FIG. 23, the fin-type heat conduction component 120' can be disposed on the heat source 110, although not limited thereto. In some embodiments, the conductive structure CV (e.g., TSV) connected to the heat source 110 may have a heat conduction effect, and the presence of the conductive structure CV can enhance the heat dissipation effect.

[0136] In some embodiments, the semiconductor device can be a semiconductor component SC including at least one airflow generating chip AFC and at least one heat source 110. For example, the semiconductor component SC2 in FIG. 4 can also be referred to as a semiconductor device, and the chip CP in FIG. 4 can be the heat source 110.

[0137] In particular, the above embodiments are used to explain the concept of the present application. Those skilled in the art can make changes and modifications accordingly and are not limited to this specification. For example, FIG. 24 shows a schematic diagram of a (semiconductor) device 1300 according to an embodiment of the present application. Different from the previous embodiments, the semiconductor device 1300 includes a plurality of heat conduction balls CB (e.g., solder balls) and optionally includes a heat conduction component 120. The heat conduction balls CB are disposed between the airflow generating chip AFC and the operating component (heat source 110). Note that the heat conduction balls CB have not only electrical conductivity but also heat conductivity. The heat conduction balls CB can increase the surface area of the component to air and can be used to conduct the heat generated by the operating component (heat source 110). With the help of the airflow generated by the airflow generating chip AFC, the heat generated by the operating component (heat source 110) is effectively dissipated.

[0138] FIG. 25 shows another embodiment of the semiconductor device 1400 of the present application. Inside the semiconductor device 1400, the airflow generation chip AFC and / or the airflow generation package PG can be arranged by the operating component (heat source 110). The heat generated by the operating component (heat source 110) (inside the semiconductor device 1400) is conducted through the heat conduction component 120 and / or the heat conduction ball CB, and can be dissipated through the airflow generated by the airflow generation chip AFC and / or the airflow generation package PG. Note that the airflow generation package PG shown in FIG. 25 is, but not limited to, top fining (with an opening formed in the upper part of the coating structure). The airflow generation package PG of side fining (with an opening formed in the side wall of the coating structure) is also within the scope of the present application.

[0139] FIG. 26 shows another embodiment of the semiconductor device 1500 of the present application. The semiconductor device 1500 includes a plurality of airflow generation chips AFC and a plurality of operating components (heat sources 110), and the plurality of airflow generation chips AFC and the plurality of operating components (heat sources 110) are stacked. This means that the plurality of airflow generation chips AFC and the plurality of operating components (heat sources 110) (entirely or partially) overlap in the normal direction of the base BSP (or substrate). Further, the stacked airflow generation chips AFC and the operating components (heat sources 110) such as the semiconductor device 1500 can be applied / arranged by advanced packaging technologies such as 2.5D or 3D semiconductor packages or chip-on-wafer-on-substrate (CoWoS) packages.

[0140] In one embodiment, the airflow generation chip AFC shown in FIG. 26 may be further packaged into an airflow generation package (for example, PG), and the airflow generation package (for example, PG) is stacked with the operating component (heat source 110), which is also within the scope of the present application.

[0141] Figure 27 shows another embodiment of the apparatus 1110 of the present application. The apparatus 1110 includes an air flow generating chip AFC or an air flow generating package PG disposed adjacent to the heat sink 121. In the embodiment shown in Figure 27, the air flow generating chip AFC or the air flow generating package PG is disposed by the heat sink 121 to generate an air flow for dissipating the heat carried by the heat sink 121. In one embodiment, the heat sink 121 may be a fin-type heat sink and may be a type of fin-type heat conduction component. Different from the apparatus 1100, the fin-type heat conduction component is disposed outside the air flow generating package PG, but this is also within the scope of the present application.

[0142] Figure 28 shows embodiments of two designs DSN1 and DSN2 of the coating structure 1600 of the present application. In one embodiment, the coating structure 1600 may be a metal lid for the air flow generating package of the present application. As shown in Figure 28, the coating structure 1600 includes a plurality of protrusions TPP disposed on the coating structure 1600 either on the outside (e.g., design DSN1) or the inside (e.g., design DSN2) of the coating structure 1600. The protrusions TPP of the coating structure 1600 have the same function as the heat dissipation structure TP described above (increasing the surface area and enhancing the heat dissipation performance). The coating structure 1600 can be used to implement the (all types of) coating structure CSV for the air flow generating package of the present application.

[0143] In one embodiment, the protrusions TPP may be disposed on the outside and the inside of the coating structure, and this is also within the scope of the present application.

[0144] In summary, the heat dissipation performance of the apparatus is improved by the design of the heat conduction component of the present invention.

[0145] Those skilled in the art will easily understand that many changes and modifications can be made to the apparatus and method while maintaining the teachings of the present invention. Therefore, the above disclosure should be construed as being limited only by the appended claims.

Claims

1. A base and a covering structure, A membrane structure disposed between the base and the covering structure and including a flap pair including a first flap and a second flap, An airflow generation package including: The flap pair operates at supersonic speed so that the airflow generation package generates an airflow, An airflow generation package in which a first air opening is formed on the covering structure.

2. The airflow generation package according to claim 1, wherein the first air opening is formed at the top of the covering structure.

3. The airflow generation package according to claim 1, wherein the first air opening is formed on a side wall of the covering structure.

4. The airflow generation package according to claim 1, wherein a second air opening is formed on the base.

5. An air flow path is formed in the airflow generation package and connected to the second air opening, The airflow flows through the air flow path, The airflow generation package according to claim 1, wherein the flow direction of the airflow is perpendicular to the normal direction of the membrane structure.

6. Including an anchor structure, The membrane structure is fixed on the anchor structure, An air flow path is formed in the anchor structure and connected to the second air opening, and the airflow flows through the air flow path in the anchor structure. The airflow generation package according to claim 1.

7. An air flow path is formed in the base and connected to the second air opening, and the airflow flows through the air flow path in the base. The airflow generation package according to claim 1.

8. Including a fin-type heat conduction component, The fin-type heat conduction component is in contact with a heat source, The airflow generation package according to claim 1, wherein the airflow flows through the fin-type heat conduction component and is configured to dissipate heat from the heat source.

9. A first airflow generation chip disposed on a first side of the fin-type heat conduction component and configured to form the airflow inward, A second airflow generation chip disposed on a second side of the fin-type heat conduction component and configured to form the airflow outward, The airflow generation package according to claim 8, including.

10. A first airflow generation chip disposed on a first side of the fin-type heat conduction component, A second airflow generation chip disposed on a second side of the fin-type heat conduction component, a third airflow generation chip and a fourth airflow generation chip, comprising, wherein the first airflow generation chip and the third airflow generation chip are stacked, and the second airflow generation chip and the fourth airflow generation chip are stacked, the airflow generation package according to claim 8.

11. The airflow generation package according to claim 1, wherein a flow direction of the airflow generated by the membrane structure is reversible.

12. The airflow generation package is disposed adjacent to a fin-type heat sink, the airflow generation package generates the airflow to dissipate heat on the fin-type heat sink, the airflow generation package according to claim 1.

13. A semiconductor device, an operating component that generates heat during operation, an operating component, and an airflow generation chip disposed on, under, or by the operating component, configured to generate an airflow to dissipate heat generated by the operating component, comprising a semiconductor device.

14. The semiconductor device according to claim 13, further comprising a plurality of thermal conduction balls disposed between the airflow generation chip and the operating component.

15. The semiconductor device according to claim 13, further comprising a thermal conduction component disposed on the operating component.

16. The semiconductor device according to claim 13, wherein the operating component and the airflow generation chip overlap in a normal direction of an upper surface of the operating component.

17. The semiconductor device according to claim 13, wherein the semiconductor device is disposed in a 2.5-dimensional (2.5D) or three-dimensional (3D) semiconductor package or in a chip-on-wafer-on-substrate (CoWoS) package.

18. The semiconductor device according to claim 13, wherein the operating component includes an application processor (AP), a central processing unit (CPU), a graphics processing unit (GPU), a tensor processing unit (TPU), or a memory.

19. The semiconductor device according to claim 13, wherein the airflow generation chip is a microelectromechanical system (MEMS) chip and is manufactured through a semiconductor manufacturing process.

20. The semiconductor device according to claim 13, wherein the flow direction of the air flow generated by the air flow generating chip is reversible.

21. The semiconductor device according to claim 13, wherein an air flow path is formed between the operating component and the air flow generating chip.

22. The semiconductor device according to claim 13, wherein a first air opening is formed at the top of the air flow generating chip, and a second air opening is formed at the bottom of the air flow generating chip.

23. The air flow generating chip includes a membrane structure configured to be operated to generate a plurality of air pulses at ultrasonic pulse speeds, the air flow consists of the plurality of air pulses, The semiconductor device according to claim 13, wherein the plurality of air pulses generate a net air movement or a net air flow in a single direction.

24. The semiconductor device according to claim 13, wherein the air flow generating chip includes a membrane structure, the membrane structure includes a flap pair, and the flap pair includes a first flap and a second flap arranged opposite to each other.

25. The air flow generating chip includes a membrane structure, the film structure is operated by a modulation drive signal to perform a common mode operation, The semiconductor device according to claim 13, wherein the membrane structure is operated by a demodulation drive signal to perform a differential mode operation to form a vent opening.

26. The air flow generating chip includes a membrane structure and an actuator configured to operate the membrane structure, The semiconductor device according to claim 13, wherein the actuator includes a first electrode and a second electrode, the first electrode receives a modulation drive signal, and the second electrode receives a demodulation drive signal.

27. An air flow generating package, a fin-type heat conduction component, the fin-type heat conduction component is arranged on a heat source, the fin-type heat conduction component, a first air flow generating chip arranged on a first side of the fin-type heat conduction component and configured to generate an inward air flow, a second air flow generating chip arranged on a second side of the fin-type heat conduction component and configured to generate an outward air flow, comprising The air flow generating package, wherein the air flow flows through the fin-type heat conduction component and is configured to dissipate heat from the heat source.

28. Each of the first airflow generation chip and the second airflow generation chip includes a film structure, the film structure includes a flap pair, and the flap pair includes a first flap and a second flap that are opposite to each other. The airflow generation package according to claim 27, wherein the flap pair operates at ultrasonic speed to generate the airflow. **Claim 29** The airflow generation package according to claim 27, including a coating structure, on which a first air opening is formed.

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