Radiation detection panel manufacturing method and radiation detection panel manufacturing device

Abstract

To provide a radiation detection panel manufacturing method and a radiation detection panel manufacturing device with which a radiation detection panel with excellent quality can be manufactured at reduced cost.SOLUTION: A radiation detection panel manufacturing method includes: arranging a photoelectric conversion substrate 2 and a first evaporation source 71 inside a vacuum tank 30 in a state where a vapor deposition surface 2S of the photoelectric conversion substrate 2 is exposed from a first evaporation port 71a of the first evaporation source 71; holding the pressure inside the vacuum tank 30 to be an atmospheric pressure or less; rotating the photoelectric conversion substrate 2 around a rotation axis A1; and emitting a scintillator material evaporated from the first evaporation port 71a; injecting inert gas from a nozzle 93a toward the scintillator material scattering in a first evaporation space SP1; and performing vapor deposition of the scintillator material on the vapor deposition surface 2S to form a scintillator layer 5.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] Embodiments of the present invention relate to a method for manufacturing a radiation detection panel and an apparatus for manufacturing a radiation detection panel.

Background Art

[0002] Digital radiation detectors for medical, dental, or non-destructive inspection applications mainly use a method of converting incident X-rays into visible light once in a scintillator layer. Several types of materials are used for the scintillator layer, but cesium iodide activated with thallium (hereinafter referred to as CsI / Tl) is widely used for the scintillator layer of medical flat panel detectors (FPDs), dental devices using CMOS sensors, and CCD-DR devices for medical and animal diagnosis.

[0003] To form the scintillator layer, a binary vapor deposition method of cesium iodide (CsI) as the main material and thallium iodide (TlI) as the doping material is effective. In addition, in order to align the anion elements, thallium (Tl) is doped as thallium iodide (TlI), which is an iodide. The scintillator layer is preferably in the form of a fiber plate in which columnar crystals of CsI are integrated in the plane direction to increase the resolution of the radiation detector.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] This embodiment provides a method for manufacturing a radiation detection panel and a manufacturing apparatus for a radiation detection panel, which can manufacture a radiation detection panel with excellent quality at a reduced manufacturing cost.

Means for Solving the Problems

[0006] A method for manufacturing a radiation detection panel according to an embodiment includes: placing the photoelectric conversion substrate and the first evaporation source inside a vacuum chamber in a state where the vapor deposition surface of the photoelectric conversion substrate is exposed to the side of the first evaporation port of the first evaporation source, maintaining the pressure inside the vacuum chamber below atmospheric pressure, rotating the photoelectric conversion substrate about a rotation axis along the normal of the vapor deposition surface, emitting a scintillator material evaporated from the first evaporation port of the first evaporation source, injecting an inert gas from a nozzle toward the scintillator material scattered in a first evaporation space between the first evaporation port and the vapor deposition surface, and depositing the scintillator material on the vapor deposition surface to form a scintillator layer.

[0007] Moreover, a manufacturing apparatus for a radiation detection panel according to an embodiment includes: a vacuum chamber, a first evaporation source having a first evaporation port for emitting an evaporated scintillator material, disposed inside the vacuum chamber, a holding mechanism disposed inside the vacuum chamber for holding the photoelectric conversion substrate in a state where the vapor deposition surface of the photoelectric conversion substrate is exposed to the side of the first evaporation port of the first evaporation source, a drive unit attached to the holding mechanism for rotating the photoelectric conversion substrate together with the holding mechanism about a rotation axis along the normal of the vapor deposition surface, a vacuum evacuation device airtightly attached to the vacuum chamber for maintaining the pressure inside the vacuum chamber below atmospheric pressure, and a nozzle disposed inside the vacuum chamber for injecting an inert gas toward the scintillator material scattered in a first evaporation space between the first evaporation port and the vapor deposition surface.

Brief Description of the Drawings

[0008]

Figure 1

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Mode for Carrying Out the Invention

[0009] (One Embodiment) Hereinafter, with reference to the drawings, a manufacturing apparatus for an X-ray detection panel and a manufacturing method for an X-ray detection panel according to an embodiment will be described in detail. First, the configuration of an X-ray detection panel manufactured using the manufacturing method for the X-ray detection panel and using the manufacturing apparatus for the X-ray detection panel will be described. Here, the overall configuration of an X-ray detector using the X-ray detection panel will also be described.

[0010] FIG. 1 is a cross-sectional view showing an X-ray detector 1 according to the present embodiment. The X-ray detector 1 is an X-ray image detector and an X-ray flat panel detector using an X-ray detection panel. The X-ray detector 1 is used, for example, in general medical applications and the like.

[0011] As shown in FIG. 1, the X-ray detector 1 includes an X-ray detection module 10, a support substrate 12, spacers 9a, 9b, 9c, 9d, a housing 18, an entrance window 19, and the like. The X-ray detection module 10 includes an X-ray detection panel PNL, a circuit board 11, an FPC (flexible printed circuit board) 2e1, and the like. The X-ray detection panel PNL is located between the support substrate 12 and the entrance window 19. The X-ray detection panel PNL includes a moisture-proof cover 7 facing the entrance window 19.

[0012] The entrance window 19 is attached to an opening of the housing 18. The entrance window 19 transmits X-rays. Therefore, X-rays pass through the entrance window 19 and enter the X-ray detection panel PNL. The entrance window 19 is formed in a plate shape and has a function of protecting the inside of the housing 18. The entrance window 19 is preferably formed thin using a material with a low X-ray absorption rate. Thereby, scattering of X-rays and attenuation of the X-ray dose generated at the entrance window 19 can be reduced. And a thin and light X-ray detector 1 can be realized. The X-ray detection module 10, the support substrate 12, etc. are housed inside a space surrounded by the housing 18 and the entrance window 19.

[0013] Since the X-ray detection panel PNL is composed of laminated thin members, it is light and has low mechanical strength. Therefore, the X-ray detection panel PNL is fixed to a flat surface of the support substrate 12 via an adhesive sheet. The support substrate 12 is formed in a plate shape of, for example, an aluminum alloy and has the strength necessary to stably hold the X-ray detection panel PNL. This can suppress damage to the X-ray detection panel PNL when vibration or impact is externally applied to the X-ray detector 1.

[0014] On the other surface of the support substrate 12, the circuit board 11 is fixed via spacers 9a and 9b. By using the spacers 9a and 9b formed of an electrically insulating material, the electrical insulation distance from the support substrate 12 mainly composed of metal to the circuit board 11 can be maintained. On the inner surface of the housing 18, the circuit board 11 is fixed via spacers 9c and 9d. By using the spacers 9c and 9d formed of an electrically insulating material, the electrical insulation distance from the housing 18 mainly composed of metal to the circuit board 11 can be maintained. The housing 18 supports the support substrate 12 and the like via the circuit board 11 and the spacers 9a, 9b, 9c, and 9d.

[0015] A connector corresponding to the FPC2e1 is mounted on the circuit board 11, and the FPC2e1 is electrically connected to the circuit board 11 via the connector. For the connection between the FPC2e1 and the X-ray detection panel PNL, a thermocompression bonding method using an ACF (anisotropic conductive film) is used. By this method, electrical connection between a plurality of fine pads of the X-ray detection panel PNL and a plurality of fine pads of the FPC2e1 is ensured, and the FPC2e1 is physically fixed to the X-ray detection panel PNL.

[0016] As described above, the circuit board 11 is electrically connected to the X-ray detection panel PNL via the connector, the FPC2e1, etc. The circuit board 11 electrically drives the X-ray detection panel PNL and electrically processes the output signal from the X-ray detection panel PNL.

[0017] FIG. 2 is a perspective view showing a support substrate 12, an X-ray detection panel PNL, a circuit board 11, a plurality of FPCs 2e1 and 2e2, and an image transmission unit 4 according to the present embodiment. Note that FIG. 2 does not show all the members of the X-ray detector 1. Illustrations of some members of the X-ray detector 1, such as a sealing portion described later, are omitted in FIG. 2. Regarding the photoelectric conversion substrate 2, a detection region (a detection region DA described later) is shown, but a non-detection region (a non-detection region NDA described later) is not shown.

[0018] As shown in FIG. 2, the X-ray detection panel PNL includes a photoelectric conversion substrate 2, a scintillator layer 5, and the like. The photoelectric conversion substrate 2 has a base material 2a, a plurality of photoelectric conversion units 2b, a plurality of gate lines (or control lines) G1, a plurality of data lines (or signal lines) T1, and the like. Note that the number, arrangement, etc. of the photoelectric conversion units 2b, the gate lines G1, the data lines T1, and the FPCs 2e1 and 2e2 are not limited to the example in FIG. 2. The FPCs 2e1 and 2e2 each function as a wiring substrate.

[0019] The plurality of gate lines G1 are provided above the base material 2a, extend in the row direction X as the first direction, and are arranged at a predetermined interval in the column direction Y as the second direction intersecting the first direction. The plurality of data lines T1 are provided above the base material 2a, extend in the column direction Y, intersect the plurality of gate lines G1, and are arranged at a predetermined interval in the row direction X.

[0020] The plurality of photoelectric conversion units 2b are provided on one surface side of the base material 2a. The photoelectric conversion units 2b are provided in a rectangular region defined by the gate lines G1 and the data lines T1. One photoelectric conversion unit 2b corresponds to one pixel of the X-ray image. The plurality of photoelectric conversion units 2b are arranged in a matrix in the row direction X and the column direction Y. From the above, the photoelectric conversion substrate 2 is an array substrate.

[0021] Each photoelectric conversion unit 2b includes a thin-film photodiode 15a which is a photoelectric conversion element, and a TFT (thin-film transistor) 13a as a detection switching element. Hereinafter, the thin-film photodiode 15a is referred to as TFD15a. The TFT 13a is provided above the base material 2a and is connected to a corresponding one gate line G1 and a corresponding one data line T1. The TFD15a is provided above the base material 2a and is electrically connected to the TFT 13a.

[0022] The gate line G1 is electrically connected to the circuit board 11 via the FPC2e1. The circuit board 11 supplies a control signal S1 to a plurality of gate lines G1 via the FPC2e1. The data line T1 is electrically connected to the circuit board 11 via the FPC2e2. The image data signal S2 (the charge accumulated in the photoelectric conversion unit 2b) converted by the TFD15a is transmitted to the circuit board 11 via the TFT 13a, the data line T1, and the FPC2e2.

[0023] The X-ray detector 1 includes an image transmission unit 4. The image transmission unit 4 is connected to the circuit board 11 via the wiring 4a. Note that the image transmission unit 4 may be incorporated in the circuit board 11. The image transmission unit 4 generates an X-ray image based on the signal of the image data converted into a digital signal by a plurality of analog-to-digital converters (not shown). The data of the generated X-ray image is output from the image transmission unit 4 toward an external device.

[0024] FIG. 3 is an enlarged cross-sectional view showing a part of the X-ray detection panel PNL according to the present embodiment. As shown in FIG. 3, the photoelectric conversion substrate 2 includes a base material 2a, a plurality of photoelectric conversion units 2b, and insulating layers 21, 22, 23, 24, 25. The plurality of photoelectric conversion units 2b are located in the detection region DA. Each photoelectric conversion unit 2b includes a TFD15a and a TFT 13a. The TFT 13a has a gate electrode GE, a semiconductor layer SC, a source electrode SE, and a drain electrode DE. The TFD15a is composed of a thin-film photodiode.

[0025] The base material 2a has a plate-like shape and is formed of an insulating material. Examples of the insulating material include glass such as non-alkali glass. In this embodiment, the base material 2a is formed of glass, but may be formed of an organic insulating material such as resin. The planar shape of the base material 2a is, for example, a quadrilateral. The thickness of the base material 2a is, for example, 0.5 to 0.7 mm. The insulating layer 21 is provided on the base material 2a.

[0026] A gate electrode GE is formed on the insulating layer 21. The gate electrode GE is electrically connected to the gate line G1. The insulating layer 22 is provided on the insulating layer 21 and the gate electrode GE. The semiconductor layer SC is provided on the insulating layer 22 and faces the gate electrode GE. The semiconductor layer SC is formed of a semiconductor material such as amorphous silicon as an amorphous semiconductor or polycrystalline silicon as a polycrystalline semiconductor.

[0027] A source electrode SE and a drain electrode DE are provided on the insulating layer 22 and the semiconductor layer SC. The gate electrode GE, the source electrode SE, the drain electrode DE, the gate line G1, and the data line T1 are formed using a low-resistance metal such as aluminum or chromium.

[0028] The source electrode SE is electrically connected to the source region of the semiconductor layer SC. Also, the source electrode SE is electrically connected to the data line T1. The drain electrode DE is electrically connected to the drain region of the semiconductor layer SC.

[0029] The insulating layer 23 is provided on the insulating layer 22, the semiconductor layer SC, the source electrode SE, and the drain electrode DE. The conductive layer CL is formed above the insulating layer 23 and is electrically connected to the drain electrode DE. TFD15a is formed on the conductive layer CL and is electrically connected to the conductive layer CL. TFD15a is formed through a film-forming process and a patterning process using a dry etching method.

[0030] The insulating layer 24 is provided on the insulating layer 23, the conductive layer CL, and the TFD15a. The bias line BL1 is provided on the insulating layer 24 and is connected to the TFD15a through a contact hole formed in the insulating layer 24. The insulating layer 25 is provided on the insulating layer 24 and the bias line BL1.

[0031] The insulating layers 21, 22, 23, 24, and 25 are formed of an insulating material such as an inorganic insulating material or an organic insulating material. Examples of the inorganic insulating material include an oxide insulating material, a nitride insulating material, and an oxynitride insulating material. Examples of the organic insulating material include resin.

[0032] The scintillator layer 5 is provided on the photoelectric conversion substrate 2 (a plurality of photoelectric conversion portions 2b). The scintillator layer 5 is located at least in the detection region DA and covers the upper part of the plurality of photoelectric conversion portions 2b. The scintillator layer 5 is configured to convert incident X-rays into light (fluorescence).

[0033] Note that the TFD15a converts the light incident from the scintillator layer 5 into charges. The converted charges are stored in the TFD15a. The TFT13a can switch between charging the TFD15a and discharging from the TFD15a. When the self-capacitance of the TFD15a is insufficient, the photoelectric conversion substrate 2 may further have a capacitor (storage capacitor) and store the charges converted by the TFD15a in the capacitor.

[0034] The scintillator layer 5 is formed of thallium-activated cesium iodide (CsI:Tl). If the scintillator layer 5 is formed using a vacuum evaporation method, a scintillator layer 5 composed of an aggregate of a plurality of columnar crystals can be obtained. The thickness of the scintillator layer 5 is, for example, 600 μm. At the outermost surface of the scintillator layer 5, the thickness of the columnar crystals of the scintillator layer 5 is 8 to 12 μm.

[0035] The material for forming the scintillator layer 5 is not limited to CsI:Tl. The scintillator layer 5 may be formed of thallium-activated sodium iodide (NaI:Tl), sodium-activated cesium iodide (CsI:Na), europium-activated cesium bromide (CsBr:Eu), sodium iodide (NaI), or the like.

[0036] In this embodiment, the X-ray detection panel PNL further includes a light reflection layer 6. The light reflection layer 6 is provided on the scintillator layer 5. In other words, the light reflection layer 6 is provided on the X-ray incident side of the scintillator layer 5. The light reflection layer 6 is located at least in the detection region DA and covers the upper surface of the scintillator layer 5. The light reflection layer 6 is provided to improve the utilization efficiency of light (fluorescence) and thereby improve the sensitivity characteristics. That is, the light reflection layer 6 reflects the light generated in the scintillator layer 5 that travels in the direction opposite to the side where the photoelectric conversion unit 2b is provided, so as to direct it toward the photoelectric conversion unit 2b. However, the light reflection layer 6 is not necessarily required and may be provided according to the sensitivity characteristics required for the X-ray detection panel PNL and the like.

[0037] For example, a coating material obtained by mixing light-scattering particles made of titanium dioxide (TiO2) or the like, a resin, and a solvent is applied onto the scintillator layer 5, and then the coating material is dried to form the light reflection layer 6.

[0038] Note that the structure of the light reflection layer 6 and the manufacturing method of the light reflection layer 6 are not limited to the above examples and can be variously modified. For example, the light reflection layer 6 may be formed by depositing a layer made of a metal with high light reflectivity such as a silver alloy or aluminum on the scintillator layer 5. Alternatively, the light reflection layer 6 may be formed by providing a sheet whose surface includes a metal layer with high light reflectivity such as a silver alloy or aluminum, or a resin sheet containing light-scattering particles, on the scintillator layer 5.

[0039] The moisture-proof cover (moisture-proof sheet) 7 covers the scintillator layer 5 and the light reflection layer 6. The moisture-proof cover 7 is provided to suppress the deterioration of the characteristics of the light reflection layer 6 and the characteristics of the scintillator layer 5 due to moisture contained in the air. The moisture-proof cover 7 completely covers the exposed portion of the scintillator layer 5. The moisture-proof cover 7 may have a gap with the light reflection layer 6 or the like, or the moisture-proof cover 7 may be in contact with the light reflection layer 6 or the like.

[0040] The moisture-proof cover 7 is formed of a sheet containing a metal. Examples of the metal include metals containing aluminum, metals containing copper, metals containing magnesium, metals containing tungsten, stainless steel, kovar, etc. When the moisture-proof cover 7 contains a metal, the moisture-proof cover 7 can prevent or significantly suppress the permeation of moisture. Examples of the moisture-proof cover 7 include a sheet containing a metal layer, a sheet containing an inorganic insulating layer, a laminated sheet in which a resin layer and a metal layer are laminated, and a laminated sheet in which a resin layer and an inorganic insulating layer are laminated. Also, the thickness of the moisture-proof cover 7 can be determined in consideration of X-ray absorption, rigidity, etc.

[0041] FIG. 4 is a plan view showing the X-ray detection panel PNL according to the present embodiment, and is a diagram for explaining the positional relationship between the detection region DA and the scintillator layer 5 and the like. In FIG. 4, the scintillator layer 5 is hatched diagonally upward to the right, and the sealing portion 8 is hatched diagonally downward to the right. FIG. 5 is a cross-sectional view showing the X-ray detection panel PNL according to the present embodiment along line V-V, and is a diagram showing the FPC2e1 and the connecting member AD together.

[0042] As shown in FIGS. 4 and 5, the photoelectric conversion substrate 2 has a detection region DA, a frame-shaped first non-detection region NDA1 located around the detection region DA, and a second non-detection region NDA2 outside the first non-detection region NDA1. In the present embodiment, the second non-detection region NDA2 has a frame shape. The base material 2a is located in the detection region DA and the frame-shaped non-detection region (the first non-detection region NDA1 and the second non-detection region NDA2) surrounding the detection region DA.

[0043] The scintillator layer 5 is located at least in the detection region DA. The photoelectric conversion substrate 2 further has a plurality of pads 2d1 and a plurality of pads 2d2. The pads 2d1 and the pads 2d2 are located in the second non-detection region NDA2.

[0044] One gate line G1 extends through the detection region DA, the first non-detection region NDA1, and the second non-detection region NDA2, and is electrically connected to one of the plurality of pads 2d1. One data line T1 extends through the detection region DA, the first non-detection region NDA1, and the second non-detection region NDA2, and is electrically connected to one of the plurality of pads 2d2. One of the plurality of wirings provided on the FPC2e1 is electrically connected to one pad 2d1, and one of the plurality of wirings provided on the FPC2e2 is electrically connected to one pad 2d2 (FIG. 2).

[0045] The X-ray detection panel PNL further includes a sealing portion 8. The sealing portion 8 is provided in the first non-detection region NDA1. The sealing portion 8 has a frame shape and continuously extends around the scintillator layer 5. The sealing portion 8 is joined to the photoelectric conversion substrate 2 (for example, the insulating layer 25).

[0046] The moisture-proof cover 7 is provided on the photoelectric conversion substrate 2, the scintillator layer 5, and the light reflection layer 6. The moisture-proof cover 7 is located in the detection region DA and the non-detection region (the first non-detection region NDA1). In the plan view shown in FIG. 4, the moisture-proof cover 7 completely covers the scintillator layer 5. As shown in FIG. 5, the portion of the scintillator layer 5 not covered by the photoelectric conversion substrate 2 and the sealing portion 8 is completely covered by the moisture-proof cover 7. The moisture-proof cover 7 is joined to the sealing portion 8. The moisture-proof cover 7 seals the scintillator layer 5 and the light reflection layer 6 together with the photoelectric conversion substrate 2 and the sealing portion 8.

[0047] For example, if the moisture-proof cover 7 and the sealing portion 8 are joined in an environment depressurized from atmospheric pressure, the moisture-proof cover 7 can be brought into contact with the light reflection layer 6 or the like. Also, generally, the scintillator layer 5 has voids of about 10 to 40% of its volume. If the moisture-proof cover 7 and the sealing portion 8 are joined in an environment depressurized from atmospheric pressure, even when the X-ray detector 1 is transported by an aircraft or the like, damage to the moisture-proof cover 7 can be suppressed. From the above, it is preferable that the pressure in the space defined by the sealing portion 8 and the moisture-proof cover 7 is lower than atmospheric pressure.

[0048] The sealing portion 8 is located between the photoelectric conversion substrate 2 and the moisture-proof cover 7 and is formed of a thermoplastic resin. By heating the vicinity of the periphery of the moisture-proof cover 7, the sealing portion 8 can join the photoelectric conversion substrate 2 and the moisture-proof cover 7. The FPC 2e1 is fixed to the photoelectric conversion substrate 2 (X-ray detection panel PNL) by the connection material AD and is electrically connected to the pad 2d1. The connection material AD is formed of ACF.

[0049] Next, a vacuum deposition apparatus used in the manufacturing apparatus of the X-ray detection panel PNL will be described. FIG. 6 is a configuration diagram showing a vacuum deposition apparatus 100 according to the present embodiment. As shown in FIG. 6, the vacuum deposition apparatus 100 is a manufacturing apparatus for the scintillator layer 5. The vacuum deposition apparatus 100 includes a vacuum chamber 30, an exhaust mechanism 40 for discharging the gas in the vacuum chamber 30, a holding mechanism 50 for holding the photoelectric conversion substrate 2, a motor 60 as a driving unit for controlling the movement of the photoelectric conversion substrate 2 together with the holding mechanism 50, a first evaporation mechanism 70 for evaporating cesium iodide (CsI) as a scintillator material (scintillator main material), a second evaporation mechanism 80 for evaporating thallium iodide (TlI) as a scintillator additive, and a gas introduction mechanism 90 for introducing an inert gas, which is a feature of the embodiment of the present invention, into the vacuum chamber 30.

[0050] The vacuum chamber 30 has an airtight structure to block the material to be deposited on the photoelectric conversion substrate 2 from the atmosphere outside the vacuum chamber 30. Here, the axes orthogonal to each other are defined as the X-axis, Y-axis, and Z-axis. The vacuum chamber 30 is formed in a cylindrical shape extending along the Z-axis, and both ends are closed. Note that, different from this embodiment, the vacuum chamber 30 may have other shapes such as a rectangular parallelepiped shape. In this embodiment, the direction indicated by the arrow of the Z-axis in FIG. 6 is vertically upward. However, the direction indicated by the arrow of the Z-axis in FIG. 6 may be inclined from vertically upward. The vacuum chamber 30 is provided with flanges for airtightly attaching the motor 60, the exhaust mechanism 40, and the gas introduction mechanism 90, respectively.

[0051] The exhaust mechanism 40 includes a main pump 41 as a vacuum exhaust device, a main valve 42 for controlling the connection between the main pump 41 and the vacuum chamber 30, a pipe 43 airtightly connecting the main pump 41 and the main valve 42, and a pipe 44 airtightly connecting the main valve 42 and the vacuum chamber 30.

[0052] The main pump 41 is airtightly attached to the vacuum chamber 30 via the main valve 42. The main pump 41 can maintain the pressure inside the vacuum chamber 30 below atmospheric pressure. Generally, any one of a cryopump, an oil diffusion pump, and a turbo molecular pump is used for the main pump 41. The main pump 41 is appropriately selected according to the required lead time, the amount and type of gas remaining inside the vacuum chamber 30, and the investment cost.

[0053] The main pump 41 cannot obtain sufficient exhaust capacity unless the pressure inside the vacuum chamber 30 is not less than 10 to 100 Pa. Therefore, the exhaust mechanism 40 further includes a roughing pump (not shown). By using the roughing pump, the pressure inside the vacuum chamber 30 can be reduced to a pressure below 10 to 100 Pa. Either a dry pump or an oil rotary pump can be combined with the roughing pump. Further, for the purpose of further increasing the exhaust speed in the region of 10 to 3000 Pa, a mechanical booster pump (not shown) may be combined with the roughing pump. While the scintillator layer 5 is being formed on the deposition surface 2S of the photoelectric conversion substrate 2, the main pump 41 can maintain the pressure inside the vacuum chamber 30 at a specific pressure lower than atmospheric pressure.

[0054] The holding mechanism 50 is disposed inside the vacuum chamber 30. The holding mechanism 50 includes a plate member 51 fixed to the motor 60, and a frame-shaped evaporation mask 52 that is attached to the plate member 51 and fixes the position of the photoelectric conversion substrate 2 together with the plate member 51. The holding mechanism 50, together with the motor 60, fixes the positional relationship between the photoelectric conversion substrate 2 and the first evaporation mechanism 70 (the first evaporation port 71a of the first evaporation source 71), and the positional relationship between the photoelectric conversion substrate 2 and the second evaporation mechanism 80 (the second evaporation port 81a of the second evaporation source 81).

[0055] The holding mechanism 50 can hold the photoelectric conversion substrate 2 in a state where the deposition surface 2S of the photoelectric conversion substrate 2 is exposed on the first evaporation port 71a side and the second evaporation port 81a side. The holding mechanism 50 may include a heater (not shown). By using the heater, the photoelectric conversion substrate 2 can be heated.

[0056] The motor 60 is airtightly attached to the vacuum chamber 30 and is attached to the holding mechanism 50 inside the vacuum chamber 30. The motor 60 can rotate the photoelectric conversion substrate 2 together with the holding mechanism 50 about the rotation axis A1 along the normal line of the deposition surface 2S of the photoelectric conversion substrate 2.

[0057] The speed at which the photoelectric conversion substrate 2 is rotated is preferably 4 to 30 rpm. If the rotation speed is less than 4 rpm, the resolution characteristics of the created scintillator layer 5 will deteriorate. Further, if the rotation speed exceeds 30 rpm, a bearing (not shown) that is housed in the vacuum chamber 30 and has a function of preventing the wobbling of the rotation shaft A1 will deteriorate, and there will be a problem that unevenness occurs in the rotation of the photoelectric conversion substrate 2.

[0058] The first evaporation mechanism 70 is provided on the bottom side of the vacuum chamber 30. The first evaporation mechanism 70 includes a first evaporation source 71, a heater 72, and a water-cooled jacket 73. The first evaporation source 71 has a first evaporation port 71a for radiating the evaporated scintillator material, and is disposed inside the vacuum chamber 30. The first evaporation source 71 is formed of a crucible into which powdered CsI (scintillator material), which is the material of the scintillator layer 5, is introduced. The first evaporation source 71 and the photoelectric conversion substrate 2 are arranged to face each other. The first evaporation source (crucible) 71 is, for example, a nickel container with airtightness managed so that no water leakage occurs, and is provided with a chimney through which CsI gasified by heating is released upward.

[0059] The first evaporation source 71 has a first evaporation port 71a, which is the outlet of the scintillator material, at the tip of the chimney. The shape of the first evaporation port 71a is circular. However, the shape of the first evaporation port 71a may be a shape other than circular, such as a square.

[0060] The heater 72 is provided around the first evaporation source 71. The heater 72 is arranged so as not to shield the evaporated molecules of CsI radiated from the first evaporation port 71a. The heater 72 heats the first evaporation source 71, and the drive of the heater 72 is adjusted so as to obtain a desired evaporation rate of CsI. When the first evaporation source 71 is heated, the evaporated molecules of CsI are radiated through the first evaporation port 71a to the front (upward) of the first evaporation port 71a.

[0061] The water-cooled jacket 73 covers the periphery of the first evaporation source 71 and the heater 72, and exposes the first evaporation port 71a to the outside. Inside the water-cooled jacket 73, a cooling path through which water (coolant) flows is formed. The water-cooled jacket 73 can suppress the diffusion of heat conduction from the first evaporation source 71 and the heater 72 to the outside.

[0062] Here, an axis extending in the direction obtained by averaging the direction in which CsI scatters through the center of gravity of the first evaporation port 71a is defined as the central axis A2 of the first evaporation source 71. Also, the space between the first evaporation port 71a from which CsI scatters and the evaporation surface 2S is defined as the first evaporation space SP1. The first evaporation space SP1 includes an outer space SP1a where the concentration of CsI is equal to or higher than the first reference value, and an inner space SP1b where the concentration of CsI is higher than the first reference value and equal to or higher than the second reference value and is located inside the outer space SP1a. In FIG. 6, a dot pattern is attached to the outer space SP1a, and a dot pattern denser than that of the outer space SP1a is attached to the inner space SP1b.

[0063] Also, the angle formed between the direction in which CsI is radiated from the first evaporation port 71a and the central axis A2 is defined as α. For example, the angle formed between the outer contour of the outer space SP1a and the central axis A2 is defined as α1. Also, the angle formed between the contour of the inner space SP1b and the central axis A2 is defined as α2. The amount of CsI blown out from the first evaporation port 71a is proportional to cosα. The unit for representing the amount of CsI blown out is g / m 2 s. A large amount of CsI vapor is released in the direction along the central axis A2, and it can be seen that the amount of CsI vapor decreases as the angle α increases.

[0064] The second evaporation mechanism 80 is disposed inside the vacuum chamber 30. The second evaporation mechanism 80 is located outside the first evaporation space SP1. The second evaporation mechanism 80 includes a second evaporation source 81, a heater 82, and a water-cooled jacket 83. The second evaporation source 81 has a second evaporation port 81a for emitting the evaporated scintillator additive, and is disposed inside the vacuum chamber 30. The second evaporation source 81 is formed of a crucible into which powdered TlI (scintillator additive), which is an additive for the scintillator layer 5, is introduced. The second evaporation source 81 and the photoelectric conversion substrate 2 are disposed so as to face each other. The second evaporation source (crucible) 81 is, for example, a nickel container with its airtightness managed so that no water leakage occurs, and is provided with a chimney from which the gasified TlI is discharged upward by heating.

[0065] The second evaporation source 81 has a second evaporation port 81a, which is the outlet of the scintillator additive, at the tip of the chimney. The shape of the second evaporation port 81a is circular. However, the shape of the second evaporation port 81a may be a shape other than circular, such as a square.

[0066] The heater 82 is provided around the second evaporation source 81. The heater 82 is disposed so as not to shield the evaporated molecules of TlI radiated from the second evaporation port 81a. The heater 82 heats the second evaporation source 81, and the drive of the heater 82 is adjusted so as to obtain a desired evaporation rate of TlI. When the second evaporation source 81 is heated, the evaporated molecules of TlI are radiated through the second evaporation port 81a to the front (diagonally upward) of the second evaporation port 81a.

[0067] The water-cooled jacket 83 covers the periphery of the second evaporation source 81 and the heater 82, and exposes the second evaporation port 81a to the outside. Inside the water-cooled jacket 83, a cooling path through which water (coolant) flows is formed. The water-cooled jacket 83 can suppress the diffusion of heat conduction from the second evaporation source 81 and the heater 82 to the outside.

[0068] Here, an axis extending in the direction obtained by averaging the direction in which TlI scatters through the center of gravity of the second evaporation port 81a is defined as the central axis A3 of the second evaporation source 81. Also, the space between the second evaporation port 81a from which TlI scatters and the deposition surface 2S is defined as the second evaporation space SP2. In FIG. 6, a dot pattern is provided in the second evaporation space SP2. A dot pattern is provided more densely in the space where the second evaporation space SP2 and the outer space SP1a overlap than in each of the second evaporation space SP2 and the outer space SP1a. In the space where the second evaporation space SP2 and the inner space SP1b overlap, a dot pattern is provided more densely than in the space where the second evaporation space SP2 and the outer space SP1a overlap and more densely than in the inner space SP1b.

[0069] The gas introduction mechanism 90 includes a cylinder 91, a pressure regulator 92, a nozzle ring 93, a pipe 94, a mass flow controller 95, etc. The cylinder 91 stores an inert gas typified by nitrogen and argon. In the present embodiment, the cylinder 91 stores nitrogen.

[0070] The pressure regulator 92 can adjust the pressure of the inert gas sent from the cylinder 91 to the pipe 94. The pipe 94 has a function of sending an inert gas from the pressure regulator 92 to the nozzle ring 93. The pipe 94 is made of stainless steel.

[0071] The mass flow controller 95 has a function of controlling the amount of the inert gas flowing in the middle of the pipe 94. The mass flow controller 95 is formed of, for example, S600 manufactured by Horiba Ltd. The gas introduction mechanism 90 further includes a controller unit (not shown) for controlling the flow rate of the inert gas and the timing of flowing the inert gas. The above controller unit is formed of, for example, PE-S7 manufactured by Horiba Ltd. The above controller unit is electrically connected to the mass flow controller 95 and can control the opening and closing of the valve of the mass flow controller 95. In order to address the risk that the mass flow controller 95 alone cannot completely stop the introduction of the inert gas into the vacuum chamber 30, an electromagnetic valve (not shown) can be provided upstream or downstream or in both directions of the mass flow controller 95 on the pipe 94.

[0072] FIG. 7 is an X-Z plan view showing an enlarged part of the vacuum evaporation apparatus 100 of FIG. 6. FIG. 8 is an X-Y plan view showing an enlarged part of the vacuum evaporation apparatus 100 of FIG. 6. As shown in FIGS. 6 to 8, the nozzle ring 93 is disposed inside the vacuum chamber 30. The nozzle ring 93 has a nozzle 93a for injecting an inert gas toward CsI (scintillator material) scattered in the first evaporation space SP1. The nozzle 93a (nozzle ring 93) is located outside the first evaporation space SP1. The inert gas injected from the nozzle 93a first collides with the CsI in the first evaporation space SP1 and does not first collide with the TlI (scintillator additive) in the second evaporation space SP2. However, the inert gas injected from the nozzle 93a may first collide with the TlI in the second evaporation space SP2.

[0073] The nozzle 93a has a function of discharging an inert gas in a certain direction and has holes with a diameter of 0.2 to 3 mm. The inert gas injected from the nozzle 93a travels in the direction of the deposition surface 2S of the photoelectric conversion substrate 2, and preferably intersects the evaporation molecules of CsI at an angle as far as possible from a right angle to the direction in which the evaporation molecules of CsI flow in the first evaporation space SP1. The inert gas does not collide with the evaporation molecules of CsI flowing in the first evaporation space SP1 from the side. The inert gas collides with the evaporation molecules of CsI obliquely from behind and pushes the evaporation molecules of CsI from behind obliquely toward the deposition surface 2S. In order for the inert gas to push the evaporation molecules of CsI from behind, in the nozzle ring 93, it is desirable that the direction of the holes of the nozzle 93a and the nozzle surface face the deposition surface 2S side.

[0074] As shown in Fig. 7, a virtual plane that includes the central axis A2 of the first evaporation source 71 and intersects the nozzle 93a is defined as the first virtual plane FS1. On the first virtual plane FS1, a virtual line that starts from the center of the first evaporation source 71 in the first evaporation space SP1, passes through the first evaporation port 71a, and reaches the vicinity of the nozzle 93a is defined as the first virtual line FL1. Among the injection spaces SP3 that intersect the first virtual line FL1 and through which the inert gas passes, a virtual line that connects the nozzle 93a and the center of the photoelectric conversion substrate 2 is defined as the second virtual line FL2. Let the angle formed by the first virtual line FL1 and the second virtual line FL2 be θ. Then, the angle θ is an acute angle. Thereby, the evaporated molecules of CsI can be well pushed backward by the inert gas.

[0075] As shown in Fig. 8, the nozzle ring 93 includes N nozzles 93a. N is an integer of 3 or more. In this embodiment, N = 12. Here, a virtual plane that is orthogonal to the central axis A2 and passes through the N nozzles 93a is defined as the second virtual plane FS2. On the second virtual plane FS2, it is desirable that the N nozzles 93a are located at the N vertices of a regular N-sided polygon whose center is located on the central axis A2. In that case, the 12 nozzles 93a are provided at equal intervals of 30° around the central axis A2.

[0076] The N nozzles 93a can inject an inert gas toward the CsI scattered in the first evaporation space SP1. Since the inert gas can be evenly injected from a plurality of directions onto the evaporated molecules of CsI, the evaporated molecules of CsI can be pushed backward in a well-balanced manner. The vacuum evaporation apparatus 100 according to this embodiment is configured as described above.

[0077] Next, a method for manufacturing the X-ray detection panel PNL will be described. As a method for manufacturing the X-ray detection panel PNL, a method for manufacturing the scintillator layer 5 using the vacuum evaporation apparatus 100 will be described. As shown in Fig. 6, when the manufacturing of the scintillator layer 5 is started, first, the vacuum evaporation apparatus 100 and the photoelectric conversion substrate 2 are prepared.

[0078] Subsequently, the photoelectric conversion substrate 2 is attached to the holding mechanism 50. Then, the holding mechanism 50 to which the photoelectric conversion substrate 2 is attached is carried into the vacuum chamber 30 and attached to the shaft of the motor 60. Also, CsI (scintillator material) is loaded into the first evaporation source 71, and TlI (scintillator additive) is loaded into the second evaporation source 81. Thereby, the photoelectric conversion substrate 2, the first evaporation source 71, and the second evaporation source 81 can be arranged inside the vacuum chamber 30 in a state where the deposition surface 2S of the photoelectric conversion substrate 2 is exposed to the side of the first evaporation port 71a of the first evaporation source 71 and the side of the second evaporation port 81a of the second evaporation source 81.

[0079] After that, the opening / closing door of the vacuum chamber 30 is closed to airtight seal the vacuum chamber 30. Next, the inside of the vacuum chamber 30 is decompressed using a roughing pump (not shown), and then the pressure inside the vacuum chamber 30 is reduced to 1×10 -3 Pa or less using the cryopump which is the main pump 41. Thereby, the pressure inside the vacuum chamber 30 can be maintained below atmospheric pressure. Subsequently, the motor 60 is operated to rotate the photoelectric conversion substrate 2 at a rotational speed of 20 rpm about the rotation axis A1.

[0080] Next, the heating of CsI using the heater 72, the heating of TlI using the heater 82, the circulation of water in the cooling path of the water-cooled jacket 73, and the circulation of water in the cooling path of the water-cooled jacket 83 are started. At this time, the first evaporation port 71a and the second evaporation port 81a are each closed with a shutter until the temperatures of CsI and TlI respectively stabilize at temperatures appropriate for deposition.

[0081] Subsequently, the valve opening degree of the mass flow controller 95 is adjusted to flow nitrogen at a flow rate of 1 sccm (Standard Cubic Centimeter per Minute) from the cylinder 91. The nitrogen gas passes through the pipe 94 and jets into the vacuum chamber 30 from the N nozzles 93a. At this time, when the pressure inside the vacuum chamber 30 is 1×10 -2The atmosphere in the vacuum chamber 30 is evacuated so as to be below Pa. Thereby, while forming the scintillator layer 5 on the vapor deposition surface 2S, the pressure inside the vacuum chamber 30 can be maintained at a specific pressure lower than the atmospheric pressure.

[0082] The relationship between the flow rate of nitrogen gas passing through the mass flow controller 95 and the pressure in the vacuum chamber 30 depends on the performance of the main pump 41, the respective diameters of the pipes 43 and 44 of the exhaust mechanism 40, the volume of the vacuum chamber 30, and the internal structure of the vacuum chamber 30. For example, when the volume of the vacuum chamber 30 is substantially 1.2 m 3 and the diameter of the oil diffusion pump as the main pump 41 is 14 inches, by setting the flow rate of the mass flow controller 95 to 1 sccm, the pressure in the vacuum chamber 30 can be maintained at 1 to 5×10 -3 Pa. Also, by setting the flow rate of the mass flow controller 95 to 0.3 sccm, the pressure in the vacuum chamber 30 can be maintained at 0.5 to 2×10 -3 Pa, so that it can be maintained at a pressure suitable for vacuum evaporation.

[0083] As described above, the pressure inside the vacuum chamber 30 can be maintained below the atmospheric pressure. When the pressure inside the vacuum chamber 30 has stabilized, the shutters of the first evaporation source 71 and the second evaporation source 81 are opened, and CsI and TlI are simultaneously vapor-deposited on the vapor deposition surface 2S to form the scintillator layer 5.

[0084] When forming the scintillator layer 5, CsI evaporated from the first evaporation port 71a of the first evaporation source 71 is radiated, and an inert gas is injected from the nozzle 93a toward the CsI scattered in the first evaporation space SP1, and CsI is vapor-deposited on the vapor deposition surface 2S to form the scintillator layer 5. Further, when forming the scintillator layer 5, TlI evaporated from the second evaporation port 81a of the second evaporation source 81 is radiated, and TlI is further vapor-deposited on the vapor deposition surface 2S.

[0085] When forming the scintillator layer 5, the direction in which nitrogen gas is jetted from the nozzle 93a is adjusted so as not to be very orthogonal to the direction in which the CsI vapor flows. As a result, the frequency of collision between the CsI vapor and the nitrogen gas is reduced, and it becomes easier to obtain the scintillator layer 5 with good resolution characteristics.

[0086] The smaller the diameter D of the nozzle ring 93, the smaller the relative angle of the velocity vectors of the CsI molecules and the nitrogen gas molecules that diverge in the atmosphere (in vacuum) inside the vacuum chamber 30 tends to be, and it becomes easier for the nitrogen molecules to wrap around behind the CsI vapor. In the present embodiment, the diameter D is set to the minimum size that does not prevent the CsI vapor from reaching the vapor deposition surface 2S from the first evaporation port 71a.

[0087] When the scintillator layer 5 having a desired thickness is formed, the shutters of the first evaporation source 71 and the second evaporation source 81 are closed, and the vacuum evaporation is terminated. Subsequently, the supply of power to each heater is stopped, and when the temperature of the photoelectric conversion substrate 2 has sufficiently decreased, dry air is introduced into the vacuum chamber 30, and the pressure of the vacuum chamber 30 is returned to atmospheric pressure. Subsequently, the photoelectric conversion substrate 2 on which the film formation of the scintillator layer 5 is completed is taken out from the vacuum chamber 30. Thereby, the production of the scintillator layer 5 is completed.

[0088] Here, the inventors of the present application changed the flow rate of the nitrogen gas of the mass flow controller 95 and the maximum pressure inside the vacuum chamber 30 to form several scintillator layers 5 (X-ray detector 1), and investigated the MTF (Modulation Transfer Function), DQE (Detective Quanta Efficiency), and material efficiency, and compared them with Comparative Example 1. The results of the investigation and the comparison are shown in FIG. 9. FIG. 9 is a diagram showing in a table the (1) flow rate of nitrogen gas, (2) maximum pressure inside the vacuum chamber 30, (3) MTF, (4) DQE, (5) material efficiency, and (6) comparison with Comparative Example 1 for each of Examples 1 to 5 and Comparative Examples 1 and 2 of the present embodiment.

[0089] As shown in FIG. 9, the X-ray detectors 1 of Examples 1 to 5 were formed using the method for manufacturing the X-ray detection panel PNL of the present embodiment and the vacuum deposition apparatus 100. The X-ray detectors 1 of Comparative Examples 1 and 2 were formed using a vacuum deposition apparatus different from the vacuum deposition apparatus 100 of the present embodiment. In the vacuum deposition apparatus for Comparative Examples 1 and 2, the gas introduction mechanism 90 was formed without the nozzle ring 93, the nitrogen gas inlet was a 4-mm diameter hole opened in the wall of the vacuum chamber 30, and the nitrogen gas flow sufficiently intersected the CsI vapor flow. Further, in the vacuum deposition apparatus for Comparative Examples 1 and 2, the scintillator layer 5 was not formed while flowing nitrogen gas (inert gas). Also, in Comparative Example 1, a variable baffle was provided for the purpose of restricting the exhaust gas in the exhaust mechanism 40. In Comparative Example 1, the variable baffle was constricted to increase the pressure in the vacuum chamber 30 to 0.55 Pa.

[0090] Regarding the characteristic evaluation results shown in comparison with Comparative Example 1, in Comparative Example 2, due to insufficient pressure in the vacuum chamber 30, the scintillator layer 5 became a glassy continuous film and was not formed in the shape of a fiber plate. A part of the scintillator layer 5 peeled off from the deposition surface 2S of the photoelectric conversion substrate 2, and the X-ray detector 1 (product) could not be completed.

[0091] On the other hand, in Examples 1 to 5, the pressure inside the vacuum chamber 30 was 1 to 3 orders of magnitude smaller (lower) than that in Comparative Example 1, and the frequency of collision between nitrogen gas and CsI vapor was small. Therefore, abnormal growth did not occur in the formation of the scintillator layer 5, and the MTF characteristics were improved compared to Comparative Example 1.

[0092] The difference between Example 3 and Comparative Example 2 was found to be the blowing position of nitrogen gas, and it was found that whether a fiber plate-shaped scintillator layer 5 could be formed or not was determined by the difference in the blowing position of nitrogen gas.

[0093] Moreover, in all of Examples 1 to 5, it was possible to obtain a higher MTF than that of Comparative Example 1, a higher DQE than that of Comparative Example 1, and a higher material efficiency than that of Comparative Example 1. Therefore, all of Examples 1 to 5 have an improvement effect as compared with Comparative Example 1.

[0094] According to the manufacturing apparatus for an X-ray detection panel PNL and the manufacturing method for an X-ray detection panel PNL according to the present embodiment configured as described above, CsI evaporated from the first evaporation port 71a is radiated, and an inert gas is injected from the nozzle 93a toward the CsI scattered in the first evaporation space SP1, and CsI can be deposited on the deposition surface 2S to form the scintillator layer 5. From the above, it is possible to obtain a manufacturing apparatus for an X-ray detection panel PNL and a manufacturing method for an X-ray detection panel PNL that can manufacture an X-ray detection panel PNL with excellent quality while suppressing the manufacturing cost. The present embodiment discloses a technique capable of improving the resolution characteristics, the noise characteristics, and the material cost.

[0095] Next, a case where the manufacturing apparatus and the manufacturing method of the above embodiment are not used will be described. As a means for realizing the columnar crystals of the scintillator layer 5, there is a method of forming the scintillator layer 5 in a state where an inert gas is introduced into the vacuum chamber 30 and the pressure inside the vacuum chamber 30 is adjusted to about 0.1 to 5 Pa.

[0096] The inert gas has a function of suppressing the surface diffusion of the CsI vapor reaching the deposition surface 2S in the direction along the deposition surface 2S and forming crystals having a fine columnar structure. On the other hand, the inert gas obstructs the movement of the CsI molecules flying from the first evaporation source 71 toward the deposition surface 2S. Due to the above obstruction, it is accompanied by a form that can be said to be an initial stage of abnormal growth such as the formation of dendritic crystals or coarsened crystals, and the resolution characteristics of the obtained scintillator layer 5 were insufficient.

[0097] Here, the above-mentioned surface diffusion means that the molecular substance reaching the vapor deposition surface 2S does not stay there but moves a distance from less than 1 μm to several tens of μm on the vapor deposition surface 2S. Thereafter, the molecular substance will either adhere to the part of the CsI nuclei (clusters) on the vapor deposition surface 2S or partially re-evaporate. The above-mentioned dendritic crystal refers to a crystal that does not grow in a rod shape in one direction during crystal growth but grows while branching in multiple directions. The above-mentioned coarsened crystal refers to, for example, when a plurality of columnar crystals are growing in the same height and in the same direction, only one column protrudes in the height direction, and due to its height, it is easier to gather the surrounding vapor, and as the crystal growth progresses, it becomes locally high and thick.

[0098] Also, the abnormal growth of crystals is also a cause of reducing the transparency of the scintillator layer 5. It causes unevenness in the transmission of light from the scintillator layer 5 to the photoelectric conversion substrate 2, and also causes deterioration of the noise characteristics of the scintillator layer 5. The above-mentioned unevenness is caused by the difference in the light emission points for individual incident X-ray photons. Also, as a peculiar phenomenon of the vacuum evaporation method, a part of the evaporated material that reaches the photoelectric conversion substrate 2 constitutes the parts of the product (scintillator layer 5), but most of the rest becomes a loss of the material that does not adhere to the vapor deposition surface 2S, which also causes a problem of high material cost (high manufacturing cost).

[0099] (Modification Example 1) Next, the configuration of the vacuum evaporation apparatus 100 according to Modification Example 1 of the above embodiment will be described. The configuration of the vacuum evaporation apparatus 100 and the manufacturing method of the scintillator layer 5 are the same as those of the above embodiment except for the content described in this Modification Example 1. FIG. 10 is a configuration diagram showing a part of the vacuum evaporation apparatus 100 according to this Modification Example 1, and is a diagram for explaining the positional relationship between the first evaporation source 71 and the nozzle ring 93, etc.

[0100] As shown in FIG. 10, the position of the injection port of the nozzle 93a may be closer to (or lower than) the side of the first evaporation source 71 up to the vicinity of the position of the first evaporation port 71a. In the direction along the Z-axis, it is desirable that the position of the injection port of the nozzle 93a be on the deposition surface 2S side of the position of the first evaporation port 71a. Also in this Modification 1, the same effects as those of the above-described embodiment can be obtained.

[0101] (Modification 2) Next, the configuration of the vacuum evaporation apparatus 100 according to Modification 2 of the above-described embodiment will be described. The configuration of the vacuum evaporation apparatus 100 and the method for manufacturing the scintillator layer 5 are the same as those of the above-described embodiment except for the content described in this Modification 2. FIG. 11 is a configuration diagram showing a part of the vacuum evaporation apparatus 100 according to this Modification 2, and is a diagram for explaining the positional relationship between the first evaporation source 71 and the nozzle ring 93 and the like. FIG. 12 is an X-Y plan view showing an enlarged view of the nozzle ring 93 according to this Modification 2.

[0102] As shown in FIGS. 11 and 12, when the rotation axis A1 and the central axis A2 are misaligned, the nozzle 93a may be arranged only on the side far from the rotation axis A1, and nitrogen gas may be introduced intensively from the side far from the rotation axis A1. In that case, the nozzle ring 93 has a shape of a part of a ring, such as a semi-ring shape, instead of a ring shape. Also in this Modification 2, the same effects as those of the above-described embodiment can be obtained.

[0103] Although the embodiments of the present invention have been described, the above-described embodiments are presented as examples and are not intended to limit the scope of the invention. The above-described novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. The above-described embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalent scope thereof.

[0104] For example, in the above-described embodiment, CsI is used as the scintillator material, but the present invention is not limited thereto, and similar effects to those of the above-described embodiment can be obtained by using other materials as the scintillator material. The above-described technology is not limited to the application to the manufacturing apparatus and manufacturing method of the X-ray detection panel PNL, and can be applied to the manufacturing apparatus and manufacturing method of various radiation detection panels.

Explanation of Reference Numerals

[0105] 1... X-ray detector, PNL... X-ray detection panel, 2... Photoelectric conversion substrate, 2S... Deposition surface, 5... Scintillator layer, 100... Vacuum deposition apparatus, 30... Vacuum chamber, 40... Exhaust mechanism, 41... Main pump, 50... Holding mechanism, 60... Motor, 70... First evaporation mechanism, 71... First evaporation source, 71a... First evaporation port, 80... Second evaporation mechanism, 81... Second evaporation source, 81a... Second evaporation port, 90... Gas introduction mechanism, 93... Nozzle ring, 93a... Nozzle, A1... Rotation axis, A2, A3... Central axis, FL1... First virtual line, FL2... Second virtual line, FS1... First virtual plane, FS2... Second virtual plane, P1... First evaporation space, SP1a... Outer space, SP1b... Inner space, SP2... Second evaporation space, SP3... Injection space, θ... Angle.

Claims

1. Place the photoelectric conversion substrate and the first evaporation source inside a vacuum chamber in a state where the vapor deposition surface of the photoelectric conversion substrate is exposed to the side of the first evaporation port of the first evaporation source, maintain the pressure inside the vacuum chamber at or below atmospheric pressure, rotate the photoelectric conversion substrate about a rotation axis along the normal of the vapor deposition surface, radiate the scintillator material evaporated from the first evaporation port of the first evaporation source, and inject inert gas from a nozzle toward the scintillator material scattered in the first evaporation space between the first evaporation port and the vapor deposition surface, and deposit the scintillator material on the vapor deposition surface to form a scintillator layer. A method for manufacturing a radiation detection panel.

2. When injecting the inert gas, inject the inert gas from the nozzle located outside the first evaporation space. The method for manufacturing a radiation detection panel according to Claim 1.

3. Set the central axis of the first evaporation source as an axis extending in the direction obtained by averaging the direction in which the scintillator material scatters and passing through the centroid of the first evaporation port, On a first virtual plane including the central axis and intersecting the nozzle, among the first evaporation space, let the angle formed by a first virtual line from the center of the first evaporation source through the first evaporation port to near the nozzle and a second virtual line connecting the nozzle and the center of the photoelectric conversion substrate in the injection space through which the inert gas passes and intersecting the first virtual line be θ. The θ is an acute angle. The method for manufacturing a radiation detection panel according to Claim 2.

4. When depositing the scintillator material on the vapor deposition surface, inject the inert gas from N nozzles toward the scintillator material scattered in the first evaporation space, the N nozzles include the nozzle, the N is an integer of 3 or more, On a second virtual plane perpendicular to the central axis of the first evaporation source and passing through the N nozzles, the N nozzles are located at the N vertices of a regular N-gon centered on the central axis, the central axis is an axis extending in the direction obtained by averaging the direction in which the scintillator material scatters and passing through the centroid of the first evaporation port. The method for manufacturing a radiation detection panel according to Claim 1.

5. While forming the scintillator layer on the vapor deposition surface, maintain the pressure inside the vacuum chamber at or below a specific pressure lower than atmospheric pressure. The method for manufacturing a radiation detection panel according to Claim 1.

6. With the vapor deposition surface of the photoelectric conversion substrate exposed to the second evaporation port side of the second evaporation source, the second evaporation source is further disposed inside the vacuum chamber. When forming the scintillator layer, the scintillator additive evaporated from the second evaporation port of the second evaporation source is radiated, and the scintillator additive is further vapor-deposited on the vapor deposition surface. The method for manufacturing a radiation detection panel according to claim 1.

7. A vacuum chamber, A first evaporation source having a first evaporation port for radiating the evaporated scintillator material and disposed inside the vacuum chamber, A holding mechanism disposed inside the vacuum chamber and holding the photoelectric conversion substrate in a state where the vapor deposition surface of the photoelectric conversion substrate is exposed to the first evaporation port side of the first evaporation source, A drive unit attached to the holding mechanism and rotating the photoelectric conversion substrate together with the holding mechanism about a rotation axis along the normal line of the vapor deposition surface, A vacuum evacuation device hermetically attached to the vacuum chamber and maintaining the pressure inside the vacuum chamber below atmospheric pressure, A nozzle disposed inside the vacuum chamber and injecting an inert gas toward the scintillator material scattered in a first evaporation space between the first evaporation port and the vapor deposition surface, A manufacturing apparatus for a radiation detection panel.

8. The nozzle is located outside the first evaporation space. The manufacturing apparatus for a radiation detection panel according to claim 7.

9. Taking the axis passing through the center of gravity of the first evaporation port and extending in the direction obtained by averaging the directions in which the scintillator material scatters as the central axis of the first evaporation source, On a first virtual plane including the central axis and intersecting the nozzle, among the first evaporation space, a first virtual line from the center of the first evaporation source through the first evaporation port to the vicinity of the nozzle, and a second virtual line connecting the nozzle and the center of the photoelectric conversion substrate in the injection space through which the inert gas passes and intersecting the first virtual line, let the angle formed by them be θ, The θ is an acute angle. The manufacturing apparatus for a radiation detection panel according to claim 8.

10. Further comprising N nozzles including the nozzle, The N is an integer of 3 or more, On a second virtual plane perpendicular to the central axis of the first evaporation source and passing through the N nozzles, the N nozzles are located at N vertices of a regular N-gon centered on the central axis, The central axis is an axis passing through the center of gravity of the first evaporation port and extending in the direction obtained by averaging the directions in which the scintillator material scatters. The N nozzles inject the inert gas toward the scintillator material scattered in the first evaporation space. The apparatus for manufacturing a radiation detection panel according to claim 7. **Claim 11** While forming the scintillator layer on the vapor deposition surface, the vacuum evacuation device maintains the pressure inside the vacuum chamber at a specific pressure lower than the atmospheric pressure. The apparatus for manufacturing a radiation detection panel according to claim 7. **Claim 12** Further comprising a second evaporation source having a second evaporation port for emitting the evaporated scintillator additive and further disposed inside the vacuum chamber. The vapor deposition surface of the photoelectric conversion substrate is exposed to the second evaporation port side of the second evaporation source. The apparatus for manufacturing a radiation detection panel according to claim 7.

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