Substrate processing apparatus and method of inspection

Abstract

To provide a technology that can readily inspect performance of a seal structure even when having a plurality of divided regions.SOLUTION: A substrate processing apparatus includes a processing vessel, a shower plate, and a conductor plate. The shower plate is segmented into a plurality of divided regions together with the conductor plate. Each of the divided regions includes a boundary surface between the conductor plate and the shower plate. The boundary surface includes: an annular first seal structure; an annular second seal structure; and an interval formed of irregularities of the shower plate and the conductor plate between the first seal structure and the second seal structure. The conductor plate includes an introduction hole communicated to the interval. The substrate processing apparatus includes a plurality of ports communicated to respective introduction holes of the conductor plate and provided in an outside surface of the substrate processing apparatus. The plurality of ports is installed in the outside surface of the substrate processing apparatus in an arrangement corresponding to an arrangement of the divided regions.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and an inspection method.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that performs processing on a substrate by supplying a gas into a processing space of a processing container through a shower plate and generating plasma through a metal window formed by laminating conductor plates on the shower plate. Further, this substrate processing apparatus has an air connection portion for grounding the boundary between the conductor plate and the shower plate to the atmosphere, and a seal structure for sealing between the air connection portion and the processing space.

[0003] For this type of substrate processing apparatus, it is necessary to inspect for leaks in the seal structure adjacent to the air connection portion during the manufacturing stage or the like. For example, in the inspection, helium gas is supplied to the air connection portion, and the concentration of helium is detected by a helium detector installed in the gas exhaust pipe.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique for easily inspecting the performance of a seal structure.

Means for Solving the Problems

[0006] According to one aspect of the present disclosure, there is provided a substrate processing apparatus including a processing container having a processing space for processing a substrate therein, a shower plate provided in the processing container for discharging a gas into the processing space, and a conductor plate laminated on the shower plate, wherein the shower plate is partitioned together with the conductor plate into a plurality of divided regions, each of the plurality of divided regions has an interface between the conductor plate and the shower plate, the interface includes an annular first seal structure that hermetically seals the shower plate and the conductor plate, an annular second seal structure that circulates at a position away from the first seal structure and hermetically seals the shower plate and the conductor plate, and a gap formed by unevenness of the shower plate and the conductor plate between the first seal structure and the second seal structure, the conductor plate includes an introduction hole communicating with the gap, the substrate processing apparatus has a plurality of ports provided on an outer surface of the substrate processing apparatus and communicating with each of the introduction holes of the plurality of conductor plates, and the plurality of ports are installed on the outer surface of the substrate processing apparatus in an arrangement corresponding to the arrangement of the plurality of divided regions.

Advantages of the Invention

[0007] According to one aspect, the performance of the seal structure can be easily inspected.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same constituent parts, and redundant descriptions may be omitted.

[0010] <Substrate Processing Apparatus> With reference to FIG. 1, an example of a substrate processing apparatus according to an embodiment of the present disclosure will be described. FIG. 1 is a longitudinal sectional view showing an example of a substrate processing apparatus according to an embodiment.

[0011] The substrate processing apparatus 100 is an inductively coupled plasma (ICP) processing apparatus that executes various substrate processing methods on a substrate G for a flat panel display (hereinafter referred to as "FPD"). Examples of FPDs include liquid crystal displays (LCDs), electro luminescence (ELs), and plasma display panels (PDPs).

[0012] As the material of the substrate G, glass is mainly used. Depending on the application, a transparent synthetic resin or the like may be used for the substrate G. Examples of the substrate processing of the substrate G by the substrate processing apparatus 100 include etching processing and film formation processing using the CVD (Chemical Vapor Deposition) method. The substrate G may be in a form in which a circuit is patterned on its surface, or may be a support substrate without patterning.

[0013] The substrate G for an FPD is formed in a rectangular shape (square shape) in plan view. The planar dimensions of the substrate G have been increasing with the passage of generations. The planar dimensions of the substrate G processed by the substrate processing apparatus 100 include, for example, dimensions from about 1500 mm × 1800 mm of the 6th generation to at least about 3000 mm × 3400 mm of the 10.5th generation. Also, the thickness of the substrate G is about 0.2 mm to several mm.

[0014] The substrate processing apparatus 100 includes a rectangular parallelepiped processing container 20, a substrate mounting table 70 for mounting the substrate G in the processing container 20, and a control unit 90. Note that the processing container 20 may have a shape such as a cylindrical shape or an elliptical cylindrical shape. In this case, the substrate G and the substrate mounting table 70 may also be circular or elliptical. In the cylindrical processing container 20, a circular substrate formed of silicon or the like may be processed.

[0015] The processing container 20 is divided into two spaces, upper and lower, by a metal window 50. The antenna chamber A, which is the upper space, is formed by the upper chamber 13 and the metal window 50, and the processing space S, which is the lower space, is formed by the lower chamber 17 and the metal window 50. Also, the processing container 20 has a rectangular annular support frame 14 installed at the position that is the boundary between the upper chamber 13 and the lower chamber 17.

[0016] The upper chamber 13 forming the antenna chamber A includes a side wall 11 and a top plate 12. The upper chamber 13 is formed of a metal such as aluminum or an aluminum alloy.

[0017] The support frame 14 is also formed of a metal such as aluminum or an aluminum alloy. The support frame 14 supports the upper chamber 13 on its upper surface and supports the outer peripheral portion of the metal window 50 at its inner protruding portion.

[0018] The lower chamber 17 having the processing space S inside is formed in a concave shape by integrally molding the side wall 15 and the bottom plate 16. Alternatively, the side wall 15 and the bottom plate 16 may be manufactured separately and joined to form the concave shape. The lower chamber 17 is formed of a metal such as aluminum or an aluminum alloy, similarly to the upper chamber 13. The lower chamber 17 is grounded via the ground wire 21. Therefore, the entire processing container 20 is in a grounded state.

[0019] At the upper end of the side wall 15 of the lower chamber 17, a rectangular annular (endless) seal groove 22 is formed. A seal member 23 such as an O-ring is fitted into the seal groove 22. The seal member 23 contacts the contact surface of the support frame 14 to seal the lower chamber 17 and the support frame 14.

[0020] An opening 18 for loading and unloading the substrate G with respect to the lower chamber 17 is formed in the side wall 15 of the lower chamber 17. The opening 18 is opened and closed by a gate valve 24. The lower chamber 17 is connected to a transfer chamber (not shown) provided with a transfer mechanism. The substrate processing apparatus 100 enables the loading and unloading of the substrate G by the transfer mechanism by opening the opening 18 with the gate valve 24.

[0021] Further, the lower chamber 17 has a plurality of exhaust ports 19 in the bottom plate 16. A gas exhaust pipe 25 is connected to each exhaust port 19. An on-off valve 26 and an exhaust device 27 are installed in the gas exhaust pipe 25. The substrate processing apparatus 100 forms an exhaust system 28 with the gas exhaust pipe 25, the on-off valve 26, and the exhaust device 27. The exhaust device 27 has a vacuum pump such as a turbo molecular pump and evacuates the processing space S to a predetermined degree of vacuum during the process. A pressure gauge (not shown) is installed in the lower chamber 17, and the detection information by this pressure gauge is transmitted to the control unit 90.

[0022] The substrate mounting table 70 is installed inside the lower chamber 17. The substrate mounting table 70 includes a base material 73 and an electrostatic chuck 76 laminated on the upper surface 73a of the base material 73. Also, on the bottom plate 16 of the lower chamber 17, a pedestal 78 formed of an insulating material and having a stepped portion on the inside is fixed. The substrate mounting table 70 is placed on the stepped portion of this pedestal 78.

[0023] The planar shape of the base material 73 (the shape viewed in plan) is rectangular and has a planar dimension comparable to that of the substrate G placed on the substrate mounting table 70. For example, the length of the long side of the base material 73 is about 1800 mm to 3400 mm, and the length of the short side of the base material 73 is about 1500 mm to 3000 mm. Also, for example, the thickness of the base material 73 is about 50 mm to 100 mm. The base material 73 is formed of stainless steel, aluminum, an aluminum alloy, or the like.

[0024] The base material 73 has a serpentine temperature control medium flow path 72a that covers the entire region of the rectangular plane. At both ends of the temperature control medium flow path 72a, a feed pipe 72b that supplies the temperature control medium to the temperature control medium flow path 72a and a return pipe 72c that discharges the temperature control medium that has flowed through the temperature control medium flow path 72a and has been heated are connected. A chiller 86 is connected to the feed pipe 72b and the return pipe 72c via a feed path 87 and a return path 88. The chiller 86 has a main body that controls the temperature and discharge flow rate of the temperature control medium and a pump that pumps the temperature control medium. Examples of the temperature control medium include refrigerants such as Galden (registered trademark) and Florinate (registered trademark). The temperature control structure in the illustrated example is a configuration in which the temperature control medium is circulated through the base material 73, but a configuration in which temperature control is performed by a heater or the like may also be used, or a configuration in which temperature control is performed by both the temperature control medium and a heater may be used. The heater can be formed, for example, from tungsten, molybdenum, or a compound of any one of these metals and alumina, titanium, or the like. Also, in the illustrated example, the temperature control medium flow path 72a is formed in the base material 73, but for example, the electrostatic chuck 76 may have a temperature control structure.

[0025] In addition, a temperature sensor (not shown), such as a thermocouple, is installed on the base material 73. The detection information by the temperature sensor is transmitted to the control unit 90. The control unit 90 controls the temperature control structure based on the received detection information to adjust the temperature of the base material 73 and the substrate G. More specifically, the control unit 90 adjusts the temperature and flow rate of the temperature control medium supplied from the chiller 86 to the feed path 87. By circulating the temperature control medium with the adjusted temperature and flow rate through the temperature control medium flow path 72a, the temperature of the substrate mounting table 70 can be adjusted. Note that the temperature sensor may be installed on the electrostatic chuck 76.

[0026] The electrostatic chuck 76 is laminated on the upper surface 73a of the base material 73 and directly mounts the substrate G. The electrostatic chuck 76 includes a ceramic layer 74 which is a dielectric film formed by spraying ceramics such as alumina, and a conductive layer 75 (electrode) embedded inside the ceramic layer 74 and having an electrostatic adsorption function.

[0027] The conductive layer 75 is connected to a DC power supply 85 via a power supply line 84. When a switch (not shown) of the power supply line 84 is turned on by the control unit 90, a DC voltage is applied from the DC power supply 85 to the conductive layer 75, and a Coulomb force is generated on the upper surface of the electrostatic chuck 76. Due to this Coulomb force, the substrate G is electrostatically adsorbed on the upper surface of the electrostatic chuck 76.

[0028] An outer periphery of the electrostatic chuck 76 and the base material 73 and an upper surface of the pedestal 78 form a stepped portion on which a rectangular frame-shaped focus ring 79 is placed. The focus ring 79 is formed of ceramics such as alumina or quartz. In a state where the focus ring 79 is placed on the stepped portion, the upper surface of the focus ring 79 is set to be lower than the upper surface of the electrostatic chuck 76.

[0029] A power supply member 80 is connected to the lower surface of the base material 73. A power supply line 81 is connected to the lower end of the power supply member 80. The power supply line 81 is connected to a high-frequency power supply 83, which is a bias power supply, via a matcher 82 that performs impedance matching. The high-frequency power supply 83 supplies high-frequency power of, for example, 3.2 MHz to the substrate mounting table 70. Thereby, the substrate mounting table 70 can generate an RF bias and attract ions that constitute the plasma generated in the processing space S by the high-frequency power supply 59, which is a source for plasma generation, to the substrate G. As a result, the substrate processing apparatus 100 can increase both the etching rate and the etching selectivity in the etching process while controlling them individually.

[0030] As described above, the substrate mounting table 70 mounts the substrate G and forms a bias electrode that generates an RF bias. At this time, a portion that becomes the ground potential inside the chamber functions as the counter electrode of the bias electrode and constitutes the return circuit of the high-frequency power. Note that the metal window 50 may be configured as a part of the return circuit of the high-frequency power.

[0031] The metal window 50 includes a conductor plate 30 and a shower plate 40. The conductor plate 30 and the shower plate 40 are preferably formed of a non-magnetic and conductive metal having corrosion resistance, or a metal with a corrosion-resistant surface treatment. For example, the conductor plate 30 and the shower plate 40 can be formed of aluminum, an aluminum alloy, stainless steel, or the like. Examples of the corrosion-resistant surface treatment include anodizing treatment and ceramic spraying. In addition, a plasma-resistant coating by anodizing treatment or ceramic spraying may be applied to the lower surface of the shower plate 40 facing the processing space S. The conductor plate 30 is grounded via a ground wire (not shown), and the shower plate 40 is also grounded via the conductor plate 30.

[0032] Above the metal window 50, a spacer (not shown) formed of an insulating material is installed, and a high-frequency antenna 54 is disposed at a distance from the conductor plate 30 by this spacer. That is, the high-frequency antenna 54 is supported by the metal window 50 via the spacer. The high-frequency antenna 54 is formed by winding an antenna wire made of a conductive metal such as copper in a circular or spiral shape.

[0033] Also, a power supply member 58a provided above the upper chamber 13 is connected to the high-frequency antenna 54. At the upper end of the power supply member 58a, a power supply line 58b is connected, and the power supply line 58b is connected to a high-frequency power supply 59 via a matcher 58 that performs impedance matching. The high-frequency power supply 59 forms an induced electric field in the lower chamber 17 by supplying, for example, high-frequency power of 13.56 MHz to the high-frequency antenna 54. Due to this induced electric field, the processing gas supplied from the shower plate 40 to the processing space S is plasmaized to generate an inductively coupled plasma, and ions in the plasma are provided to the substrate G.

[0034] The high-frequency power supply 59 is a source for generating plasma, and the high-frequency power supply 83 connected to the substrate mounting table 70 serves as a bias source for attracting the generated ions and imparting kinetic energy. In this way, the source uses inductive coupling to generate plasma, and the bias source, which is a separate power supply, is connected to the substrate mounting table 70 to control the ion energy. As a result, the high-frequency power supply 59 can independently control the generation of plasma and the ion energy, increasing the degree of freedom of the process.

[0035] In addition, the metal window 50 has a divided metal window 57 which is a divided region into a plurality of parts. Each divided metal window 57 is insulated from the support frame 14 and the adjacent divided metal window 57 by installing an insulating member 56 formed of a fluororesin such as PTFE (Polytetrafluoroethylene). The insulating member 56 is protected from the plasma formed in the processing space S, for example, by being covered with a cover member 91 formed of ceramics. Each divided metal window 57 is suspended from the top plate 12 of the upper chamber 13 by a plurality of suspenders (not shown). Since the high-frequency antenna 54 for generating plasma is also supported by the metal window 50, it is indirectly suspended by the suspenders.

[0036] FIG. 2 is a plan view of the shower plate 40 partitioned into a plurality of divided metal windows 57. As shown in FIG. 2, the metal window 50 according to the embodiment has 24 divided metal windows 57. However, the number of the divided metal windows 57 forming the metal window 50 is not particularly limited, and can be set to, for example, 12, 16, 20, etc. In FIG. 1, 4 divided metal windows 57 are schematically illustrated.

[0037] Specifically, the metal window 50 has a substantially rectangular central region RA located at the central portion, a substantially rectangular annular first outer peripheral region RB that circulates adjacent to the outside of the central region RA, and a substantially rectangular annular second outer peripheral region RC that circulates adjacent to the outside of the first outer peripheral region RB. The central region RA, the first outer peripheral region RB, and the second outer peripheral region RC are partitioned by two insulating members 56 (hidden by the cover member 91 in FIG. 2) that circulate annularly.

[0038] And the central region RA has four divided metal windows 57RA1 to 57RA4, which are trapezoidal, triangular, trapezoidal, and triangular in that order clockwise from the trapezoidal divided metal window 57RA1 located on the upper side in FIG. 2. Each of the divided metal windows 57RA1 to 57RA4 is partitioned by four insulating members 56 that obliquely extend from each corner of the metal window 50 toward the central portion and one insulating member 56 that extends longitudinally through the center at the central portion.

[0039] The first outer peripheral region RB includes, in clockwise order from the split metal window 57RB1 on the upper and left side in FIG. 2, split metal windows 57RB2 to 57RB8, and has a total of eight split metal windows 57. Each split metal window 57 in the first outer peripheral region RB is formed in a trapezoidal shape. The second outer peripheral region RC includes, in clockwise order from the split metal window 57RC1 on the upper and left side in FIG. 2, split metal windows 57RC2 to 57RC12, and has a total of twelve split metal windows 57. Each split metal window 57 in the second outer peripheral region RC is formed in a trapezoidal or rectangular shape. Each of the split metal windows 57RB1 to 57RB8 and 57RC1 to 57RC12 is partitioned by four insulating members 56 extending obliquely and a plurality of insulating members 56 extending in the vertical direction (the direction perpendicular to each side of the metal window 50) or the horizontal direction (the direction parallel to each side of the metal window 50).

[0040] The split metal windows 57RA1, 57RB1, 57RB2, 57RC1, 57RC2, and 57RC3 form the upper split metal window group 57u in FIG. 2. The split metal windows 57RA2, 57RB3, 57RB4, 57RC4, 57RC5, and 57RC6 form the right split metal window group 57r in FIG. 2. The split metal windows 57RA3, 57RB5, 57RB6, 57RC7, 57RC8, and 57RC9 form the lower split metal window group 57d in FIG. 2. The split metal windows 57RA4, 57RB7, 57RB8, 57RC10, 57RC11, and 57RC12 form the left split metal window group 57l in FIG. 2.

[0041] And the shower plate 40 has a plurality of gas discharge holes 44 for each of the plurality of split metal windows 57. The plurality of gas discharge holes 44 of each shower plate 40 are arranged in a matrix along the longitudinal direction and the short-side direction of the metal window 50 formed by the plurality of split metal windows 57. The gas discharge holes 44 adjacent to each other are spaced apart at the same interval. Each gas discharge hole 44 is formed to penetrate in the thickness direction of the shower plate 40 and communicates the gas diffusion chamber 34 formed between the conductor plate 30 and the shower plate 40 with the processing space S (see also FIG. 1).

[0042] As shown in FIG. 1, the conductor plate 30 has recesses on the lower surface (the surface facing the shower plate 40). The recesses are formed in a planar shape corresponding to each divided metal window 57 formed by the conductor plate 30, and form a gas diffusion chamber 34 in a laminated state with the shower plate 40. Further, a through hole 31a is provided in the upper part of the conductor plate 30 to communicate the upper surface of the conductor plate 30 with the gas diffusion chamber 34. A gas introduction pipe 55 is installed in this through hole 31a. Note that the recesses forming the gas diffusion chamber 34 may be formed on the upper surface of the shower plate 40.

[0043] The gas introduction pipe 55 is provided with a flange 55a at an intermediate position thereof, and the lower surface of the flange 55a is placed on the upper surface of the conductor plate 30. An endless seal groove is formed on the upper surface of the conductor plate 30 at the location where the flange 55a is placed, and a seal member such as an O-ring is fitted into this seal groove (both are not shown). The seal member contacts the lower surface of the flange 55a to hermetically seal the space between the gas introduction pipe 55 and the conductor plate 30.

[0044] Each gas introduction pipe 55 communicating with the gas diffusion chamber 34 of each divided metal window 57 is gathered at one location in the antenna chamber A. The gas introduction pipes 55 gathered at one location penetrate through a supply port 12a formed in the top plate 12 of the upper chamber 13 and are connected to a processing gas supply source 64 via a gas supply pipe 61 that is hermetically connected.

[0045] The gas supply pipe 61 is provided with an opening / closing valve 62 and a flow controller 63 such as a mass flow controller at an intermediate position. The gas supply pipe 61, the opening / closing valve 62, the flow controller 63, and the processing gas supply source 64 form a processing gas supply unit 60. Note that the processing gas supply unit 60 may be configured as a branch pipe that branches the gas supply pipe 61 in the middle, and by installing an opening / closing valve, a flow controller, and a processing gas supply source in each branch pipe, a configuration for supplying a plurality of types of processing gases can be achieved.

[0046] In plasma processing, the processing gas supply unit 60 supplies the processing gas from the processing gas supply source 64 to the gas diffusion chamber 34 of each divided metal window 57 through the gas supply pipe 61 and the gas introduction pipe 55. This processing gas is discharged into the processing space S from each gas diffusion chamber 34 through the gas discharge holes 44 of each shower plate 40.

[0047] Note that the gas introduction pipes 55 of each divided metal window 57 may not be bundled together, and each may communicate with the processing gas supply unit 60 individually to supply the processing gas to each divided metal window 57. Also, the gas introduction pipes 55 may be bundled for each of the central region RA, the first outer peripheral region RB, and the second outer peripheral region RC of the metal window 50, and each gas introduction pipe 55 may communicate with the processing gas supply unit 60 individually to supply the processing gas. Furthermore, each divided metal window 57 may have its own dedicated high-frequency antenna, and high-frequency power may be applied to each high-frequency antenna individually.

[0048] The control unit 90 controls the operations of each component of the substrate processing apparatus 100, for example, the chiller 86, the high-frequency power supplies 59 and 83, the processing gas supply unit 60, the exhaust system 28, etc. The control unit 90 is implemented by a computer including a processor, a memory, an input / output interface, a communication interface, etc. (not shown). The processor is a combination of one or more of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), a circuit composed of a plurality of discrete semiconductors, etc., and executes the program stored in the memory. The memory includes a main storage device composed of a semiconductor memory, etc., and an auxiliary storage device composed of a disk, a drive, a semiconductor memory (flash memory), etc. The control unit 90 may also include a user interface such as an input device such as a keyboard and a mouse for performing input operations such as command input, a display device such as a display for visualizing and displaying the operating status of the substrate processing apparatus 100, and an output device such as a printer.

[0049] The processor executes the substrate processing of the substrate processing apparatus 100 based on a program and a recipe stored in the memory. The recipe has the process conditions for the substrate processing set therein. The process conditions include, for example, gas flow rate, pressure inside the processing vessel 20, temperature of the processing vessel 20 or the substrate G, process time, and the like.

[0050] <Interface 51 between the conductor plate 30 and the shower plate 40> Next, with reference to FIGS. 3 and 4, the structure of the interface 51 between the conductor plate 30 and the shower plate 40 according to the embodiment will be described. FIG. 3 is an enlarged view of part III of FIG. 1. FIG. 4 is an enlarged view of the interface 51 between the conductor plate 30 and the shower plate 40. Hereinafter, as an example, one of the plurality of divided metal windows 57 will be described, but the same applies to the other divided metal windows 57.

[0051] The conductor plate 30 and the shower plate 40 are joined to each other at the interface 51 around the gas diffusion chamber 34 of the conductor plate 30. For example, when the gas diffusion chamber 34 is triangular in plan view, the interface 51 forms a triangular frame in plan view.

[0052] The first seal structure 35 and the second seal structure 45 are respectively installed at positions spaced apart from each other on the interface 51. Specifically, the first seal structure 35 is installed at an adjacent position to the gas diffusion chamber 34, and the second seal structure 45 is installed at an adjacent position to the insulating member 56. In the embodiment, the first seal structure 35 is provided on the conductor plate 30, and the second seal structure 45 is provided on the shower plate 40. However, the arrangement of the first seal structure 35 and the second seal structure 45 is not particularly limited, and the first seal structure 35 may be provided on the shower plate 40 and the second seal structure 45 may be provided on the conductor plate 30. Alternatively, both the first seal structure 35 and the second seal structure 45 may be provided on the conductor plate 30 or on the shower plate 40.

[0053] The first seal structure 35 has an endless first seal groove 35a, and a first seal member 35b formed by an O-ring is accommodated in the first seal groove 35a. The second seal structure 45 encircles the outside of the first seal structure 35 at the boundary surface 51. The second seal structure 45 has a second seal groove 45a, and a second seal member 45b formed by an O-ring is accommodated in the second seal groove 45a.

[0054] As the material of the O-ring, for example, nitrile rubber (NBR), fluororubber (FKM), and silicone rubber (Q) can be used. Furthermore, fluorosilicone rubber (FVMQ), perfluoropolyether rubber (FO), acrylic rubber (ACM), and ethylene propylene rubber (EPM) are applicable. The first seal member 35b formed by an O-ring and installed on the conductor plate 30 contacts the upper surface of the opposing shower plate 40 that forms the boundary surface 51, thereby hermetically sealing the space between the shower plate 40 and the conductor plate 30. Also, the second seal member 45b formed by an O-ring and installed on the shower plate 40 contacts the lower surface of the opposing conductor plate 30 that forms the boundary surface 51, thereby hermetically sealing the space between the shower plate 40 and the conductor plate 30.

[0055] Also, an endless conduction part 33 facing the boundary surface 51 is installed on the conductor plate 30. The conduction part 33 has a shield spiral 33a. The shield spiral 33a is formed of a metal such as aluminum, stainless steel, copper, or iron, for example, and has the function of ensuring electrical conduction between the shower plate 40 and the conductor plate 30 and keeping the shower plate 40 at a specific potential, for example, the ground potential. Although electrical conduction is possible at the contact points between the conductor plate 30 and the shower plate 40 at the boundary surface 51 other than the conduction part 33, the conduction becomes unstable due to the presence of unevenness described later, and thus the conduction part 33 is provided to ensure more reliable conduction.

[0056] Of the boundary surface 51, the contact surface of the conductor plate 30 inside the first seal structure 35 and the contact surface of the shower plate 40 constitute a vacuum connection portion 52in communicating with the gas diffusion chamber 34. Also, of the boundary surface 51, the contact surface of the conductor plate 30 outside the second seal structure 45 and the contact surface of the shower plate 40 constitute a vacuum connection portion 52out communicating with the processing space S through the gap between the shower plate 40 and the insulating member 56.

[0057] On the other hand, an air connection portion 53 through which air can be introduced is formed between the first seal structure 35 and the second seal structure 45 of the boundary surface 51. Specifically, as shown in FIG. 4, the contact surface of the conductor plate 30 forming the boundary surface 51 and the contact surface of the shower plate 40 each have microscopic surface irregularities 51a. The surface irregularities 51a on both sides form a large number of minute gaps 51b. The air connection portion 53 is formed by these large number of minute gaps 51b. The air connection portion 53 can reduce the temperature change and temperature non-uniformity of each divided metal window 57 by improving the heat conduction between the conductor plate 30 and the shower plate 40 through the air introduced into the gap 51b during substrate processing.

[0058] As shown in FIGS. 3 and 4, the conductor plate 30 according to the embodiment includes an introduction hole 37 communicating with the air connection portion 53 of the divided metal window 57. The introduction hole 37 includes, for example, a fine hole 371 communicating with the air connection portion 53 and a thick hole 372 extending in the thickness direction of the conductor plate 30. The fine hole 371 extends inclined with respect to the extending direction of the thick hole 372 and communicates with the air connection portion 53. Also, the thick hole 372 opens to the upper surface (the surface opposite to the contact surface) of the conductor plate 30.

[0059] On the upper surface of the conductor plate 30, an introduction pipe 38 is connected via a connector 373 that communicates with the opening of the introduction hole 37. The introduction pipe 38 extends horizontally (in the lateral direction) at a predetermined height position within the antenna chamber A and is connected to a port 381 (to be described later) provided on the side wall 11 of the upper chamber 13. Since a plurality of ports 381 are provided corresponding to each of the plurality of divided metal windows 57, a plurality of ports 381 are also provided. Each port 381 penetrates the inside and outside of the side wall 11 and protrudes from the outer surface of the processing container 20. In other words, each port 381 is formed on the outer surface of the substrate processing apparatus 100.

[0060] FIG. 5 is a perspective view showing an installation example of each port 381 as viewed from the outside of the processing container 20. As shown in FIG. 5, a plurality of ports 381 are provided on the side wall 11 of the processing container 20 corresponding to the number of the plurality of divided metal windows 57. In the embodiment, 24 ports 381 are provided corresponding to the 24 divided metal windows 57. Each port 381 has a fixing portion 382 fixed to the side wall 11 by screwing, and a plug 383 that protrudes short from the fixing portion 382 and to which another connecting pipe can be connected.

[0061] Further, each port 381 includes a cap 384 which is a sealing member that is mounted so as to cover the plug 383 and seals the flow path within the port 381. Each port 381 blocks the communication between the outside atmosphere and the flow path of the port with the cap 384 mounted on the plug 383.

[0062] Each of the above ports 381 is closed in the flow path during substrate processing or the like by attaching the cap 384. For example, in the inspection of the sealing performance of the first seal structure 35 and the second seal structure 45, the operator removes the cap 384 of an arbitrary port 381, and helium gas is supplied from the helium supply device 200 to the port 381. The helium supply device 200 is configured to supply helium gas at a set flow rate over a set period. As a method of supplying helium gas, helium gas may be blown onto the port 381 by an air gun (not shown) connected to the helium supply device 200, or helium gas may be supplied by connecting a connecting pipe 201 connected to the helium supply device 200 to the port 381.

[0063] The substrate processing apparatus 100 can supply helium gas to the gap 51b that forms the air connection portion 53 through the introduction pipe 38 and the introduction hole 37 from the port 381 (see also FIG. 3). As described above, the air connection portion 53 is the gap 51b provided between the first seal structure 35 and the second seal structure 45 on the contact surfaces of both the conductor plate 30 and the shower plate 40. There is a vacuum connection portion 52in (communicating with the gas diffusion chamber 34) at an adjacent position of the first seal structure 35, and a vacuum connection portion 52out (communicating with the processing space S) at an adjacent position of the second seal structure 45. If there is a defect in the sealing performance of the first seal structure 35 and the second seal structure 45, the helium gas supplied to the air connection portion 53 will leak into the processing space S through the vacuum connection portion 52in or the vacuum connection portion 52out. On the other hand, when the first seal structure 35 and the second seal structure 45 are normal, the helium gas supplied to the air connection portion 53 does not leak into the processing space S.

[0064] As shown in FIG. 1, the substrate processing apparatus 100 is provided with a helium measuring device 210 capable of detecting the concentration of helium gas flowing into the processing space S at an appropriate position of the processing vessel 20 (or the exhaust system 28). The helium measuring device 210 is connected to the control unit 90 and transmits detection information obtained by detecting the concentration of helium gas in the processing space S to the control unit 90. Based on the detection information of this helium measuring device 210, the control unit 90 can determine whether the first seal structure 35 and the second seal structure 45 are normal or abnormal in the inspection of the seal performance.

[0065] FIG. 6 is a diagram showing the arrangement relationship between a plurality of divided metal windows 57 and a plurality of ports 381 installed on the side wall 11. As shown in FIGS. 5 and 6, the plurality of ports 381 are installed on the side wall 11 so as to correspond to the arrangement of each divided metal window 57 (divided region) of the metal window 50. In other words, the plurality of divided metal windows 57 are arranged in a first arrangement, and the plurality of ports 381 are arranged in a second arrangement simulating the first arrangement.

[0066] For example, each port 381 forms a group corresponding to the upper divided metal window group 57u, the right divided metal window group 57r, the lower divided metal window group 57d, and the left divided metal window group 57l of each divided metal window 57. That is, each port 381 has an upper port group 381u, a right port group 381r, a lower port group 381d, and a left port group 381l. By separating each group from each other by a certain clearance (a distance larger than the distance between adjacent ports 381 within the group), it is easier to distinguish between the groups. In FIG. 6, for each port 381, as will be described later, individually distinguishable codes such as 381RA1, 381RB1, 381RB2, etc. are assigned according to the corresponding divided metal window 57, and these are also collectively referred to as the port 381.

[0067] The upper port group 381u has a triangular shape that mimics the arrangement of the upper split metal window group 57u, and is also in communication with each of the split metal windows 57RA1, 57RB1, 57RB2, 57RC1, 57RC2, 57RC3 of the upper split metal window group 57u. Among the upper port group 381u, the lower port 381RA1 communicates with the air connection part 53 of the split metal window 57RA1. Also, the middle port 381RB1 in the vertical direction communicates with the air connection part 53 of the split metal window 57RB1, and the middle port 381RB2 in the vertical direction communicates with the air connection part 53 of the split metal window 57RB2. The upper port 381RC1 communicates with the air connection part 53 of the split metal window 57RC1, the upper port 381RC2 communicates with the air connection part 53 of the split metal window 57RC2, and the upper port 381RC3 communicates with the air connection part 53 of the split metal window 57RC3.

[0068] The right port group 381r has a triangular shape that mimics the arrangement of the right split metal window group 57r, and is also in communication with each of the split metal windows 57RA2, 57RB3, 57RB4, 57RC4, 57RC5, 57RC6 of the right split metal window group 57r. Among the right port group 381r, the left port 381RA2 communicates with the air connection part 53 of the split metal window 57RA2. Also, the middle port 381RB3 in the horizontal direction communicates with the air connection part 53 of the split metal window 57RB3, and the middle port 381RB4 in the horizontal direction communicates with the air connection part 53 of the split metal window 57RB4. The right port 381RC4 communicates with the air connection part 53 of the split metal window 57RC4, the right port 381RC5 communicates with the air connection part 53 of the split metal window 57RC5, and the right port 381RC6 communicates with the air connection part 53 of the split metal window 57RC6.

[0069] The lower port group 381d has a triangular shape that mimics the arrangement of the lower split metal window group 57d, and is also in communication with each of the split metal windows 57RA3, 57RB5, 57RB6, 57RC7, 57RC8, 57RC9 of the lower split metal window group 57d. Among the lower port group 381d, the upper port 381RA3 communicates with the air connection part 53 of the split metal window 57RA3. Also, the middle port 381RB5 in the vertical direction communicates with the air connection part 53 of the split metal window 57RB5, and the middle port 381RB6 in the vertical direction communicates with the air connection part 53 of the split metal window 57RB6. The lower port 381RC7 communicates with the air connection part 53 of the split metal window 57RC7, the lower port 381RC8 communicates with the air connection part 53 of the split metal window 57RC8, and the lower port 381RC9 communicates with the air connection part 53 of the split metal window 57RC9.

[0070] The left port group 381l has a triangular shape that mimics the arrangement of the left split metal window group 57l, and is also in communication with each of the split metal windows 57RA4, 57RB7, 57RB8, 57RC10, 57RC11, 57RC12 of the left split metal window group 57l. Among the left port group 381l, the right port 381RA4 communicates with the air connection part 53 of the split metal window 57RA4. Also, the middle port 381RB7 in the horizontal direction communicates with the air connection part 53 of the split metal window 57RB7, and the middle port 381RB8 in the horizontal direction communicates with the air connection part 53 of the split metal window 57RB8. The left port 381RC10 communicates with the air connection part 53 of the split metal window 57RC10, the left port 381RC11 communicates with the air connection part 53 of the split metal window 57RC11, and the left port 381RC12 communicates with the air connection part 53 of the split metal window 57RC12.

[0071] That is, the second arrangement of each port 381 is made distinguishable by merely observing by simulating the first arrangement of each divided metal window 57 set in the metal window 50. The "simulation" in this case includes concepts such as being similar to, approximating, having the same arrangement as, and being able to recall the arrangement of each divided metal window 57. In the arrangement of each port 381, the vertical and horizontal positional relationships in the arrangement of each divided metal window 57 are maintained. In other words, the arrangement (set) of each port 381 is topologically co-phased with respect to the arrangement (set) of each divided metal window 57. Mathematically, the phase space of each port 381 and the phase space of each divided metal window 57 can be said to be homeomorphic (equal as phase spaces). For example, the second arrangement of each port 381 has the same arrangement as the first arrangement of each divided metal window 57, while as a whole, it may extend horizontally, vertically, in another direction, or be curved, etc.

[0072] The substrate processing apparatus 100 according to the embodiment is basically configured as described above. Hereinafter, a inspection method for inspecting the sealing performance of the metal window 50 will be described with reference to FIG. 7. FIG. 7 is a flowchart showing the inspection method according to the embodiment.

[0073] In the above-described substrate processing apparatus 100, it is necessary to prevent the processing gas in the processing space S from flowing into the atmosphere connection portion 53 during substrate processing, or to prevent the atmosphere in the atmosphere connection portion 53 from flowing into the processing space S. Therefore, during the manufacturing stage, it is required not to generate a leak between the vacuum connection portions 52in and 52out and the atmosphere connection portion 53. Therefore, in the manufacture of the substrate processing apparatus 100, after forming the processing container 20 including the metal window 50, an inspection method for inspecting the sealing performance of the first seal structure 35 and the second seal structure 45 is performed. This inspection method is carried out in an environment where the inside of the substrate processing apparatus 100 is in a vacuum atmosphere.

[0074] In the inspection method, an operator performs an inspection according to the procedure shown in FIG. 7, for example. First, the operator selects a divided metal window 57 to be inspected from a plurality of divided metal windows 57 (step S101). The order of inspecting each divided metal window 57 is not particularly limited and may be arbitrarily selected by the operator. Also, instead of all the divided metal windows 57, some of the divided metal windows 57 may be selected for inspection.

[0075] After selecting the divided metal window 57 to be inspected, the operator connects the helium supply device 200 to the port 381 corresponding to the divided metal window 57 (step S102). As described above, the arrangement of each port 381 simulates each divided metal window 57, and the operator can easily recognize the port 381 connected to the selected divided metal window 57 to be inspected. When connecting the helium supply device 200, the operator removes the cap 384 only from the selected port 381 while keeping the caps 384 of the other ports 381 attached, and connects the connecting pipe 201 to the plug 383.

[0076] Thereafter, the operator (or the control unit 90) operates the helium supply device 200 to start supplying helium gas to the divided metal window 57 to be inspected (step S103). The helium gas supplied from the helium supply device 200 through the connecting pipe 201 passes through the port 381 to be inspected, the introduction pipe 38, and the introduction hole 37, and is introduced into the air connection portion 53 of the divided metal window 57 to be inspected. At this time, the first seal structure 35 and the second seal structure 45 that seal the adjacent position of the air connection portion 53 block the outflow of helium gas from the air connection portion 53 to the vacuum connection portions 52in and 52out if there is no defect. Conversely, if there is a defect in either the first seal structure 35 or the second seal structure, the helium gas will flow into the processing space S through the vacuum connection portions 52in and 52out. Note that instead of connecting the helium supply device 200 to the port 381, helium gas may be blown onto the port 381 by an air gun connected to the helium supply device 200.

[0077] When the control unit 90 of the substrate processing apparatus 100 supplies helium gas to the divided metal window 57 to be inspected, it acquires the detection information detected by the helium measuring device 210 and monitors the concentration of the helium gas (step S104). The control unit 90, for example, previously holds a threshold value regarding the concentration of the helium gas, and compares the detected concentration of the helium gas with the threshold value. The threshold value may be set to a concentration at which detection is assumed when the first seal structure 35 or the second seal structure 45 leaks helium gas. When the concentration of the helium gas is equal to or lower than the threshold value, the control unit 90 determines that there is no leakage of the helium gas in the divided metal window 57 to be inspected. On the other hand, when the concentration of the helium gas exceeds the threshold value, the control unit 90 determines that there is a leakage of the helium gas in the divided metal window 57 to be inspected. Thereby, the control unit 90 can accurately determine the sealing performance of the first seal structure 35 and the second seal structure 45 in the divided metal window 57 to be inspected. Further, when it is determined that there is a defect in the sealing performance, the control unit 90 notifies the operator of the information via the user interface. The operator who receives this information can easily grasp the position of the divided metal window 57 in which the defect has occurred by identifying the port 381 to which the helium supply device 200 is connected. Note that the setting of the threshold value includes the case where the concentration of the helium gas is set to 0.

[0078] When helium gas is supplied to the divided metal window 57 to be inspected over a predetermined period, the operator (or the helium supply device 200) finishes the inspection of the divided metal window 57 (step S105). Thereafter, the operator removes the helium supply device 200 from the port 381 corresponding to the divided metal window 57 to be inspected, and further attaches the cap 384 to return the inspected port 381 to its original state.

[0079] Then, the operator (or the control unit 90) determines whether or not the divided metal window 57 of the inspection target remains (step S106). If there is a divided metal window 57 of the inspection target for which the inspection has not been performed, the process returns to step S101, and the same processing flow is repeated hereinafter. On the other hand, if there is no divided metal window 57 of the inspection target for which the inspection has not been performed, the inspection method is terminated. Thereby, in the inspection method, it is possible to perform the seal performance inspection for all the divided metal windows 57 of the inspection target.

[0080] As described above, the inspection method can stably inspect the seal performance of each divided metal window 57 of the metal window 50 of the substrate processing apparatus 100. Thereby, the substrate processing apparatus 100 can be manufactured with high precision, and it is also possible to prevent abnormalities of the substrate processing apparatus 100. In particular, since the substrate processing apparatus 100 has an arrangement simulating each divided metal window 57 with respect to the arrangement of each port 381, when individually inspecting the divided metal window 57, the operator can easily identify the divided metal window 57 in which a defect has occurred.

[0081] Note that the substrate processing apparatus 100 and the inspection method according to the present disclosure are not limited to the above-described embodiments, and various modifications can be made. For example, the substrate processing apparatus 100 according to the embodiment is configured to install a plurality of ports 381 on the side wall 11 of the processing container 20. However, the substrate processing apparatus 100 may be configured to install a plurality of ports 381 on the top plate 12.

[0082] The technical idea and effects of the present disclosure described in the above embodiments will be described below.

[0083] A first aspect of the present disclosure is a substrate processing apparatus 100 including a processing container 20 having an internal processing space S for processing a substrate G, a shower plate 40 provided in the processing container 20 for discharging gas into the processing space S, and a conductor plate 30 laminated on the shower plate 40. The shower plate 40 is partitioned together with the conductor plate 30 into a plurality of divided regions (divided metal windows 57). Each of the plurality of divided regions has an interface surface 51 between the conductor plate 30 and the shower plate 40. The interface surface 51 has an annular first seal structure 35 for hermetically sealing the shower plate 40 and the conductor plate 30, an annular second seal structure 45 that encircles at a position away from the first seal structure 35 and hermetically seals the shower plate 40 and the conductor plate 30, and a gap 51b formed by the unevenness of the shower plate 40 and the conductor plate 30 between the first seal structure 35 and the second seal structure 45. The conductor plate 30 is provided with an introduction hole 37 communicating with the gap 51b. The substrate processing apparatus 100 has a plurality of ports 381 that communicate with each of the introduction holes 37 of the plurality of conductor plates 30 and are provided on the outer surface of the substrate processing apparatus 100. The plurality of ports 381 are installed on the outer surface of the substrate processing apparatus 100 in an arrangement corresponding to the arrangement of the plurality of divided regions.

[0084] According to the above, the substrate processing apparatus 100 can cause the user to recognize the arrangement of the plurality of divided regions (divided metal windows 57) by the arrangement of the plurality of ports 381, and can connect without mistake the structure for supplying gas from the ports 381 to the introduction holes 37 and the gap 51b of the interface surface 51. Thereby, the substrate processing apparatus 100 can easily inspect the sealing performance of the first seal structure 35 and the second seal structure 45 of the plurality of divided regions.

[0085] Further, the processing container 20 is partitioned into an upper space (antenna chamber A) and a lower space (processing space S) by a shower plate 40 and a conductor plate 30. The upper space is surrounded by a side wall 11 and a top plate 12. The outer surface of the substrate processing apparatus 100 provided with a plurality of ports 381 is the side wall 11 or the top plate 12. Thereby, the substrate processing apparatus 100 can be easily connected to a configuration for supplying gas to each port 381 on the outer surface of the side wall 11 or the top plate 12, and the gas can be smoothly supplied to the internal divided region (divided metal window 57).

[0086] Each of the plurality of ports 381 is sealed by a detachable cap 384. Thereby, when inspecting the plurality of divided regions (divided metal windows 57), while connecting a configuration for supplying gas to each port 381, the other ports 381 can be sealed by the caps 384, and the entry of helium gas into the other ports 381 can be surely prevented. As a result, a divided region with an abnormality can be surely specified.

[0087] Further, an exhaust system 28 for exhausting the gas in the processing space S is provided, and a helium measuring device 210 for detecting helium gas present in the processing space S is provided in the processing container 20 or the exhaust system 28. Thereby, the substrate processing apparatus 100 can detect the helium gas leaked into the processing space S by the helium measuring device 210, and it becomes possible to stably perform the inspection of the sealing performance.

[0088] Further, a second aspect of the present disclosure includes a processing container 20 having a processing space S for processing a substrate G therein, a shower plate 40 provided in the processing container 20 for discharging gas into the processing space S, and a conductor plate 30 laminated on the shower plate 40. The shower plate 40, together with the conductor plate, is partitioned into a plurality of divided regions (divided metal windows 57). Each of the plurality of divided regions has an interface surface 51 between the conductor plate 30 and the shower plate 40. The interface surface 51 includes an annular first seal structure 35 that hermetically seals the shower plate 40 and the conductor plate 30, an annular second seal structure 45 that encircles at a position away from the first seal structure 35 and hermetically seals the shower plate 40 and the conductor plate 30, and a gap 51b formed by the unevenness of the shower plate 40 and the conductor plate 30 between the first seal structure 35 and the second seal structure 45. The conductor plate 30 is provided with an introduction hole 37 communicating with the gap 51b. A method for inspecting the first seal structure 35 and the second seal structure 45 of the substrate processing apparatus 100, wherein the substrate processing apparatus has a plurality of ports provided on the outer surface of the substrate processing apparatus and communicating with each of the introduction holes of the plurality of conductor plates, includes: (A) connecting a helium supply device 200 for supplying helium gas to any one of a plurality of ports 381 arranged corresponding to the arrangement of the plurality of divided regions on the outer surface of the substrate processing apparatus 100; (B) after the step of (A), introducing helium gas from the helium supply device 200 into one port 381 to supply helium gas to one introduction hole 37 communicating with one of the plurality of introduction holes 37; and (C) measuring the concentration of helium gas present in the processing space S with a helium measuring device 210 along with the step of (B), and determining the presence or absence of leakage of helium gas from the divided region of one introduction hole 37. With this inspection method, the performance of the seal structures of the plurality of divided regions can be easily inspected.

[0089] Also, by repeating the steps (A) to (C) for each of the plurality of ports 381, the presence or absence of helium gas leakage is determined for each of the plurality of divided regions (divided metal windows 57). As a result, the inspection method can perform seal performance inspection for all the divided regions, and can smoothly identify the divided regions with defects.

[0090] Further, a third aspect of the present disclosure is a substrate processing apparatus 100 that processes a substrate G, and includes a structure for inspecting leakage of a plurality of predetermined divided regions (divided metal windows 57). The structure includes a plurality of ports 381 that communicate individually with each of the plurality of divided regions and are provided on the outer surface of the substrate processing apparatus 100, caps 384 that detachably seal each of the plurality of ports 381, and a helium measuring device 210 connected to the substrate processing apparatus 100. The plurality of divided regions are arranged in a first arrangement, and the plurality of ports 381 are arranged in a second arrangement that simulates the first arrangement. Also with this substrate processing apparatus 100, the performance of the seal structure of the plurality of divided regions can be easily inspected.

[0091] Further, a fourth aspect of the present disclosure is an inspection method for a substrate processing apparatus 100 that processes a substrate G. The substrate processing apparatus 100 has a structure for inspecting leaks in a plurality of predetermined divided regions (divided metal windows 57). The structure includes a plurality of ports 381 that communicate individually with each of the plurality of divided regions and are provided on the outer surface of the substrate processing apparatus 100, caps 384 that detachably seal each of the plurality of ports 381, and a helium measuring device 210 connected to the substrate processing apparatus 100. The plurality of divided regions are arranged in a first arrangement, and the plurality of ports 381 are arranged in a second arrangement that simulates the first arrangement. The method includes: (A) connecting a helium supply device 200 that supplies helium gas to any one of the plurality of ports 381; (B) after the step of (A), introducing helium gas from the helium supply device 200 into one port to supply helium gas to one divided region that communicates with one port 381; and (C) measuring, with the helium measuring device 210, the helium gas from one divided region along with the step of (B) to determine the presence or absence of a leak of helium gas. With this inspection method as well, the performance of the seal structure of the plurality of divided regions can be easily inspected.

[0092] Also, by repeating the steps of (A) to (C) for each of the plurality of ports 381, the presence or absence of a leak of helium gas is determined for each of the plurality of divided regions (divided metal windows 57).

[0093] The substrate processing apparatus 100 and the inspection method according to the presently disclosed embodiment are illustrative in all respects and not restrictive. The embodiment can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above plurality of embodiments can also adopt other configurations and can be combined within a non - conflicting range.

[0094] The substrate processing apparatus of the present disclosure is applicable to any type of apparatus such as an Atomic Layer Deposition (ALD) apparatus, a Capacitively Coupled Plasma (CCP), an Inductively Coupled Plasma (ICP), a Radial Line Slot Antenna (RLSA), an Electron Cyclotron Resonance Plasma (ECR), and a Helicon Wave Plasma (HWP).

Explanation of Signs

[0095] 20 Processing container 30 Conductor plate 35 First seal structure 37 Introduction hole 40 Shower plate 45 Second seal structure 51 Interface 51b Gap 57 Split metal window 100 Substrate processing apparatus 381 Port G Substrate S Processing space

Claims

1. A processing container having a processing space for processing a substrate therein, a shower plate provided in the processing container for discharging gas into the processing space, and a conductor plate laminated on the shower plate, the substrate processing apparatus comprising: the shower plate is partitioned together with the conductor plate into a plurality of divided regions, each of the plurality of divided regions has an interface between the conductor plate and the shower plate, the interface includes an annular first seal structure that hermetically seals the shower plate and the conductor plate, an annular second seal structure that circulates at a position away from the first seal structure and hermetically seals the shower plate and the conductor plate, and a gap formed by the unevenness of the shower plate and the conductor plate between the first seal structure and the second seal structure, the conductor plate is provided with an introduction hole communicating with the gap, the substrate processing apparatus has a plurality of ports provided on the outer surface of the substrate processing apparatus and communicating with each of the introduction holes of the plurality of conductor plates, the plurality of ports are installed on the outer surface of the substrate processing apparatus in an arrangement corresponding to the arrangement of the plurality of divided regions, a substrate processing apparatus.

2. the processing container is partitioned into an upper space and a lower space by the shower plate and the conductor plate, the upper space is surrounded by a side wall and a top plate, the outer surface of the substrate processing apparatus provided with the plurality of ports is the side wall or the top plate, the substrate processing apparatus according to claim 1.

3. each of the plurality of ports is sealed by a detachable cap, the substrate processing apparatus according to claim 1.

4. comprising an exhaust system for exhausting the gas in the processing space, a helium measuring device for detecting helium gas present in the processing space is provided in the processing container or the exhaust system, the substrate processing apparatus according to claim 1.

5. a processing container having a processing space for processing a substrate therein, a shower plate provided in the processing container for discharging gas into the processing space, and a conductor plate laminated on the shower plate, the shower plate is partitioned together with the conductor plate into a plurality of divided regions, each of the plurality of divided regions has an interface between the conductor plate and the shower plate, the interface includes An annular first seal structure for hermetically sealing the shower plate and the conductor plate, An annular second seal structure that circulates at a position away from the first seal structure and hermetically seals the shower plate and the conductor plate, A gap formed by the unevenness of the shower plate and the conductor plate between the first seal structure and the second seal structure, and having, The conductor plate is provided with an introduction hole communicating with the gap, and a method for inspecting the first seal structure and the second seal structure of the substrate processing apparatus, The substrate processing apparatus has a plurality of ports provided on the outer surface of the substrate processing apparatus and communicating with each of the introduction holes of the plurality of conductor plates, (A) Connecting a helium supply device for supplying helium gas to any one of the plurality of ports arranged corresponding to the arrangement of the plurality of divided regions on the outer surface of the substrate processing apparatus; (B) After the step of (A), introducing the helium gas from the helium supply device into the one port, and supplying the helium gas to one introduction hole communicating with the one port among the introduction holes; (C) Along with the step of (B), measuring the concentration of the helium gas present in the processing space with a helium measuring device, and determining the presence or absence of leakage of the helium gas from the divided region of the one introduction hole. The inspection method having, Inspection method. [

6. ] By repeating the steps of (A) to (C) for each of the plurality of ports, the presence or absence of leakage of the helium gas is determined for each of the plurality of divided regions. The inspection method according to claim 5. [

7. ] A substrate processing apparatus for processing a substrate, Comprising a structure for inspecting leaks in a plurality of predetermined divided regions, The structure is, A plurality of ports provided on the outer surface of the substrate processing apparatus and individually communicating with each of the plurality of divided regions, A cap for detachably sealing each of the plurality of ports, And a helium measuring device connected to the substrate processing apparatus. The plurality of divided regions are arranged in a first arrangement, The plurality of ports are arranged in a second arrangement simulating the first arrangement. Substrate processing apparatus. [

8. ] A method for inspecting a substrate processing apparatus for processing a substrate, The substrate processing apparatus comprises a structure for inspecting leaks in a plurality of predetermined divided regions, The structure is, A plurality of ports that communicate individually with each of the plurality of divided regions and are provided on the outer surface of the substrate processing apparatus; A cap that detachably seals each of the plurality of ports; A helium measuring device connected to the substrate processing apparatus, and The plurality of divided regions are arranged in a first arrangement, The plurality of ports are arranged in a second arrangement that simulates the first arrangement, (A) A step of connecting a helium supply device that supplies helium gas to any one of the plurality of ports; (B) After the step of (A), a step of introducing the helium gas from the helium supply device into the one port and supplying the helium gas to one divided region that communicates with the one port; (C) Along with the step of (B), a step of measuring the helium gas from the one divided region with the helium measuring device and determining whether there is a leak of the helium gas. An inspection method.

9. By repeating the steps of (A) to (C) for each of the plurality of ports, it is determined whether there is a leak of helium gas for each of the plurality of divided regions. The inspection method according to claim 8.

Images