Photosensitive resin composition, method for producing resin film, and method for manufacturing electronic device

Abstract

To provide a photosensitive resin composition that allows formation of a coating film with superior development speed and reduced development residue (scum), a method for producing a resin film using the photosensitive resin composition, and a method for manufacturing an electronic device using the resin film production method.SOLUTION: The photosensitive resin composition of the present invention comprises an alkali-soluble resin (A), a photosensitizer (B), and a solvent (G), wherein the alkali-soluble resin (A) contains a polyamide resin, and the solvent (G) has a mass ratio of a pyrrolidone-based solvent of 95% or more.SELECTED DRAWING: None

Description

Technical Field

[0001] The present invention relates to a photosensitive resin composition, a method for producing a resin film, and a method for producing an electronic device.

Background Art

[0002] Conventionally, photosensitive resin compositions containing photosensitive polyimide obtained by imparting photosensitive properties to a polyimide resin, and photosensitive polybenzoxazole obtained by incorporating a naphthoquinonediazide compound into a polybenzoxazole precursor are known.

[0003] For example, Patent Document 1 discloses a resin composition containing a polyimide precursor or a polybenzoxazole precursor, a polar solvent, and a naphthoquinonediazide compound as a photosensitizer. After such a resin composition is applied onto a substrate and subjected to exposure and development, it becomes a patterned resin film. The patterned resin film is used as a surface protective film or an interlayer insulating film of a semiconductor device.

[0004] Further, Patent Document 1 also discloses that the content of N-methyl-2-pyrrolidone (NMP) in the resin composition is set to 0.1% by mass or less. By restricting the NMP content within this range, the reduction of the environmental load on the earth is attempted.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, the coating film obtained by applying the resin composition described in Patent Document 1 has a problem that its solubility in a developer is insufficient. Therefore, there is room for improvement in improving the development rate and suppressing development residues (scum) of this coating film.

[0007] An object of the present invention is to provide a photosensitive resin composition capable of forming a coating film excellent in development speed and having less development residue (scum), a method for producing a resin film using the photosensitive resin composition, and a method for producing an electronic device using the method for producing the resin film.

Means for Solving the Problems

[0008] Such an object is achieved by the present invention described in the following (1) to (10). (1) An alkali-soluble resin (A), a photosensitizer (B), a solvent (G), and the alkali-soluble resin (A) contains a polyamide resin, the solvent (G) is characterized in that the mass ratio of the pyrrolidone-based solvent is 95% or more, a photosensitive resin composition.

[0009] (2) The photosensitive resin composition according to (1) above, wherein the pyrrolidone-based solvent is N-methyl-2-pyrrolidone (NMP).

[0010] (3) The photosensitive resin composition according to (1) or (2) above, containing a surfactant (C). (4) The photosensitive resin composition according to (3) above, wherein the surfactant (C) contains an organically modified dimethylsiloxane represented by the formula (C-1).

Chemical formula

[0011] (5) The photosensitive resin composition according to (1) or (2) above, containing an adhesion aid (D). (6) The photosensitive resin composition according to (5) above, wherein the adhesion aid (D) contains a silane compound.

[0012] (7) The photosensitive resin composition according to (1) or (2) above, containing a dissolution regulator (E). (8) The photosensitive resin composition according to (7) above, wherein the dissolution regulator (E) contains a low molecular compound having one or more phenolic hydroxyl groups.

[0013] (9) A step of applying the photosensitive resin composition according to (1) or (2) above to a substrate to obtain a photosensitive coating film; A step of performing pre-baking by heating the photosensitive coating film at a temperature exceeding 120°C and not exceeding 140°C for 1 minute or more and 10 minutes or less; A step of performing an exposure treatment on the pre-baked photosensitive coating film; A step of performing a development treatment on the photosensitive coating film that has been subjected to the exposure treatment; A step of heating and curing the photosensitive coating film remaining after development to obtain a resin film; A method for manufacturing a resin film, characterized by comprising the above steps.

[0014] (10) A method for manufacturing an electronic device, characterized by using the method for manufacturing a resin film according to (9) above.

Advantages of the Invention

[0015] According to the present invention, a photosensitive resin composition capable of forming a coating film excellent in development speed and having less development residue (scum) can be obtained.

[0016] Also, according to the present invention, a method for manufacturing a resin film capable of efficiently manufacturing a resin film by development in a short time can be obtained.

[0017] Furthermore, according to the present invention, a method for manufacturing an electronic device capable of efficiently manufacturing an electronic device can be obtained.

Brief Description of the Drawings

[0018]

Figure 1

Figure 2

Figure 3

Mode for Carrying Out the Invention

[0019] Hereinafter, the photosensitive resin composition, the method for manufacturing a resin film, and the method for manufacturing an electronic device according to the present invention will be described in detail based on the preferred embodiments shown in the accompanying drawings.

[0020] 1. Photosensitive Resin Composition First, the photosensitive resin composition according to the present embodiment will be described.

[0021] The photosensitive resin composition according to the present embodiment contains an alkali-soluble resin (A), a photosensitizer (B), and a solvent (G).

[0022] The alkali-soluble resin (A) contains a polyamide resin. Further, the solvent (G) is a solvent in which the mass ratio of the pyrrolidone-based solvent is 95% or more.

[0023] According to such a configuration, most of the solvent (G) will be occupied by the pyrrolidone-based solvent. The solvent (G) remains in a small amount in the coating film formed using the photosensitive resin composition and affects the development of the coating film. The present inventor has found that when the pyrrolidone-based solvent is contained within the above range, the solubility of the coating film formed using the photosensitive resin composition in the developer increases. By increasing the solubility, the development rate of the coating film increases, so that the manufacturing efficiency of an electronic device such as a semiconductor device or other electronic devices provided with a resin film manufactured using the coating film can be improved.

[0024] In this specification, a group (atomic group) includes both those having no substituent and those having a substituent when it is not described whether it is substituted or unsubstituted. For example, the term "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

[0025] In addition, in this specification, unless otherwise specified, when there are multiple substances corresponding to each component in the composition, the content of each component in the composition means the total amount of the multiple substances present in the composition.

[0026] 1.1. Alkaline-soluble resin (A) The alkaline-soluble resin (A) contains a polyamide resin. The polyamide resin appropriately suppresses the development rate of the coating film formed using the photosensitive resin composition from becoming too fast even when affected by the aforementioned pyrrolidone-based solvent. Thereby, the contrast during development can be ensured, and a resin film with high patterning accuracy can be obtained. It also contributes to suppressing the generation of development residues (scum). Thereby, a high-quality resin film can be manufactured.

[0027] Examples of the polyamide resin include a precursor of a polybenzoxazole resin, a precursor of a polyimide resin, etc. By the alkaline-soluble resin (A) containing these polyamide resins, the dispersibility of the alkaline-soluble resin (A) in the photosensitive resin composition can be improved, and both the development rate of the coating film formed using the photosensitive resin composition and the contrast during development can be particularly enhanced, and the generation of development residues can be suppressed. In addition, physical properties such as the mechanical strength of the resin film composed of the cured product of the photosensitive resin composition can be improved, the uniformity of the film thickness can be improved, and the occurrence of defects can be suppressed.

[0028] The alkaline-soluble resin (A) may contain other resins. Examples of the other resins include a phenol resin, a hydroxystyrene resin, a cyclic olefin resin, etc. One or a combination of two or more of these can be used in the alkaline-soluble resin (A).

[0029] The content of the polyamide resin in the alkaline-soluble resin (A) is preferably 80% by mass or more, and more preferably 90% by mass or more.

[0030] The lower limit of the weight average molecular weight of the alkali-soluble resin (A) is preferably 10,000 or more, more preferably 12,000 or more, and still more preferably 15,000 or more. When the weight average molecular weight of the alkali-soluble resin (A) is within the above range, in the resin film composed of the cured product of the photosensitive resin composition, in addition to suitable adhesion to the substrate, sufficient chemical resistance and heat resistance can be obtained.

[0031] The upper limit of the weight average molecular weight of the alkali-soluble resin (A) is preferably 100,000 or less, more preferably 75,000 or less, and still more preferably 50,000 or less. When the weight average molecular weight of the alkali-soluble resin (A) is within the above range, the fluidity of the photosensitive resin composition is improved, and the coatability and flatness during coating can be enhanced.

[0032] The weight average molecular weight of the alkali-soluble resin (A) is determined by gel permeation chromatography (GPC) using polystyrene as a standard substance.

[0033] The content of the alkali-soluble resin (A) in the photosensitive resin composition is preferably 1% by mass or more, more preferably 5% by mass or more, and still more preferably 10% by mass or more in the total solid content of the photosensitive resin composition. When the content of the alkali-soluble resin (A) is within the above range, it becomes easier to form a resin film with an appropriate thickness. On the other hand, the upper limit of the content of the alkali-soluble resin (A) is not particularly limited, but considering the balance with other components, it is preferably 70% by mass or less, and more preferably 50% by mass or less.

[0034] 1.1.1. Precursor of polybenzoxazole resin As the polyamide resin, for example, it is preferable to use an aromatic polyamide containing an aromatic ring in the structural unit of the polyamide, and those containing the structural unit represented by the formula (PA1) are more preferable. Thereby, physical properties such as the mechanical strength of the resin film can be improved. Therefore, it is also preferable from the viewpoint of improving the uniformity of the film thickness and suppressing the occurrence of defects.

[0035] Examples of the aromatic ring include a benzene ring; condensed aromatic rings such as a naphthalene ring, an anthracene ring, and a pyrene ring; and heteroaromatic rings such as a pyridine ring and a pyrrole ring. From the viewpoint of mechanical strength and the like, the polyamide resin preferably contains a benzene ring as the aromatic ring.

[0036]

Chemical formula

[0037] The polyamide resin containing the structural unit represented by formula (PA1) is a precursor of the polybenzoxazole resin. The polyamide resin containing the structural unit represented by formula (PA1) can be dehydrated and cyclized to form a polybenzoxazole resin, for example, by heat treatment at a temperature of 150 °C or higher and 380 °C or lower for 30 minutes or longer and 50 hours or shorter. The structural unit of formula (PA1) becomes the structural unit represented by formula (PBO1) by dehydration and cyclization.

[0038]

Chemical formula

[0039] When the alkali-soluble resin (A) is a polyamide resin containing the structural unit represented by formula (PA1), the photosensitive resin composition may be dehydrated and cyclized by performing the above heat treatment to form a polybenzoxazole resin. That is, the photosensitive resin composition subjected to the above heat treatment may contain a polybenzoxazole resin that is the alkali-soluble resin (A). Further, when the alkali-soluble resin (A) is a polyamide resin containing the structural unit represented by formula (PA1), after forming a resin film, the above heat treatment may be performed to cause dehydration and cyclization to form a polybenzoxazole resin. When the polybenzoxazole resin is obtained by dehydrating and ring-opening the polyamide resin, mechanical properties, thermal properties, etc. can be improved. Thereby, deformation of the resin film can be suppressed.

[0040] 1.1.2. Precursor of polyimide resin Further, as the polyamide resin, for example, those containing a structural unit represented by the formula (PA2) may be used.

[0041] The polyamide resin containing a structural unit represented by the formula (PA2) is a precursor of the polyimide resin. The polyamide resin containing a structural unit represented by the formula (PA2) can be dehydrated and cyclized into a polyimide resin, for example, by heat treatment at a temperature of 150°C or higher and 380°C or lower for 30 minutes or longer and 50 hours or shorter. Here, the structural unit of the formula (PA2) becomes a structural unit represented by the formula (PI1) by dehydration and cyclization.

[0042] When the alkali-soluble resin (A) is a polyamide resin containing a structural unit represented by the formula (PA2), the photosensitive resin composition may be dehydrated and cyclized into a polyimide resin by performing the above heat treatment. That is, the heat-treated photosensitive resin composition may contain a polyimide resin that is the alkali-soluble resin (A).

[0043] Further, when the alkali-soluble resin (A) is a polyamide resin containing a structural unit represented by the formula (PA2), after producing a resin film, the above heat treatment may be performed to cause dehydration and cyclization into a polyimide resin.

[0044]

Chemical formula

[0045] In the formula (PA2), R B and R C are each independently an organic group having from 1 to 30 carbon atoms.

[0046]

Chemical formula

[0047] In the formula (PI1), R B and R C are the same as in the formula (PA2).

[0048] R in formula (PA2) and formula (PI1) B and R C are preferably an organic group having an aromatic ring, specifically.

[0049] As the organic group having an aromatic ring, specifically, those containing a benzene ring, a naphthalene ring or an anthracene ring are preferable, and those containing a benzene ring are more preferable. Thereby, the dispersibility of the alkali-soluble resin (A) is improved, and the uniformity of the resin film can be enhanced. As a result, a composition capable of forming a resin film less likely to generate foreign matters even in a high-temperature and high-humidity environment can be obtained.

[0050] 1.1.3. Method for producing polyamide resin The above polyamide resin is polymerized, for example, as follows.

[0051] First, in the polymerization step (S1), a polyamide is polymerized by polycondensing a diamine monomer and a dicarboxylic acid monomer. Then, in the low molecular weight component removal step (S2), low molecular weight components are removed to obtain a polyamide resin mainly composed of polyamide.

[0052] 1.1.3.1. Polymerization step (S1) In the polymerization step (S1), a diamine monomer and a dicarboxylic acid monomer are polycondensed. The method of polycondensation for polymerizing polyamide is not limited, and specifically, melt polycondensation, acid chloride method, direct polycondensation, etc. can be mentioned.

[0053] In addition, a method of reacting a compound selected from the group consisting of a compound listed as a dicarboxylic acid monomer described later, a tetracarboxylic dianhydride, trimellitic anhydride, and a dicarboxylic acid dichloride with a compound having a hydroxyl group to obtain an active ester type dicarboxylic acid may be used. That is, this active ester type dicarboxylic acid may also be used as a dicarboxylic acid monomer. Examples of the compound having a hydroxyl group include 1-hydroxybenzotriazole or a derivative of this 1-hydroxybenzotriazole. In addition, when obtaining this active ester type dicarboxylic acid, a condensing agent usually used in ordinary ester synthesis, such as dicyclohexylcarbodiimide, can be used. In addition, after adding an acid catalyst such as hydrochloric acid, sulfuric acid, benzenesulfonic acid, or toluenesulfonic acid, heating is performed to remove the water generated from the alcohol compound and the carboxylic acid compound while allowing the reaction to proceed to promote esterification and obtain the above active ester type dicarboxylic acid.

[0054] The diamine monomer and dicarboxylic acid monomer used in the polymerization of the polyamide resin will be described below. Note that only one type of diamine monomer and dicarboxylic acid monomer may be used, or two or more types of diamine monomers, two or more types of dicarboxylic acid monomers, or both of these may be used.

[0055] (Diamine monomer) The diamine monomer used in the polymerization is not limited. For example, it is preferable to use a diamine monomer containing an aromatic ring in its structure, and it is more preferable to use a diamine monomer containing a phenolic hydroxyl group in its structure. By producing a polyamide resin using such a diamine monomer as a raw material, the conformation of the polyamide resin can be controlled, and the dispersibility when made into a composition can be further improved.

[0056] Here, as the diamine monomer containing a phenolic hydroxyl group in the structure, for example, a compound represented by the formula (DA1) is preferable. By producing a polyamide resin using such a diamine monomer as a raw material, the conformation of the polyamide resin can be controlled, and the molecular chains of the polyamide resin can form a denser structure. Therefore, it is considered that the molecules of the alkali-soluble resin (A) and the metal molecules can be linked more strongly in a coordinated manner to freeze the molecular structure and improve the adhesion to the substrate.

[0057] In addition, for example, when a diamine monomer represented by the formula (DA1) is used, the polyamide resin contains a structural unit represented by the formula (PA3). That is, the polyamide resin preferably contains a structural unit represented by the formula (PA3), for example.

[0058]

Chemical formula

[0059] In the formula (DA1), R 4 is a group formed by one or more atoms selected from the group consisting of a hydrogen atom, a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a silicon atom, a chlorine atom, a fluorine atom, and a bromine atom. R 5 ~R 10 each independently represents hydrogen or an organic group having 1 to 30 carbon atoms.

[0060]

Chemical formula

[0061] In the formula (PA3), R 4 , R 5 ~R 10 are the same as in the formula (DA1).

[0062] R in the formula (DA1) and the formula (PA3) 4is a group formed by one or more atoms selected from the group consisting of a hydrogen atom, a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a silicon atom, a chlorine atom, a fluorine atom, and a bromine atom.

[0063] Note that R 4 is a divalent group. Here, the divalent group indicates the valence. That is, it indicates that there are two bonds by which R 4 is bonded to other atoms.

[0064] When R 4 in Formula (DA1) and Formula (PA3) contains a carbon atom, R 4 is, for example, a group having 1 to 30 carbon atoms, preferably a group having 1 to 10 carbon atoms, more preferably a group having 1 to 5 carbon atoms, and even more preferably a group having 1 to 3 carbon atoms.

[0065] When R 4 in Formula (DA1) and Formula (PA3) contains a carbon atom, examples of R 4 include an alkylene group, an arylene group, a halogen-substituted alkylene group, a halogen-substituted arylene group, and the like.

[0066] The alkylene group may be, for example, a linear alkylene group or a branched-chain alkylene group. Specific examples of the linear alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, a heptylene group, an octylene group, a nonylene group, a decanylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, and the like. Specific examples of the branched-chain alkylene group include alkylmethylene groups such as -C(CH3)2-, -CH(CH3)-, -CH(CH2CH3)-, -C(CH3)(CH2CH3)-, -C(CH3)(CH2CH2CH3)-, -C(CH2CH3)2-; alkyl ethylene groups such as -CH(CH3)CH2-, -CH(CH3)CH(CH3)-, -C(CH3)2CH2-, -CH(CH2CH3)CH2-, -C(CH2CH3)2-CH2-, and the like.

[0067] Examples of the arylene group specifically include a phenylene group, a biphenylene group, a naphthylene group, an anthrylene group, and a group formed by bonding two or more arylene groups to each other.

[0068] As the halogen-substituted alkylene group and the halogen-substituted arylene group, specifically, those obtained by substituting the hydrogen atoms in the above-described alkylene group and arylene group with halogen atoms such as fluorine atoms, chlorine atoms, and bromine atoms can be used. Among these, those obtained by substituting hydrogen atoms with fluorine atoms are preferably used.

[0069] In the formulas (DA1) and (PA3), when R 4 does not contain a carbon atom, examples of R 4 include a group composed of an oxygen atom or a sulfur atom.

[0070] In the formulas (DA1) and (PA3), R 5 ~R 10 are each independently hydrogen or an organic group having 1 to 30 carbon atoms. For example, it is preferably hydrogen or an organic group having 1 to 10 carbon atoms, more preferably hydrogen or an organic group having 1 to 5 carbon atoms, still more preferably hydrogen or an organic group having 1 to 3 carbon atoms, and particularly preferably hydrogen or an organic group having 1 to 2 carbon atoms. Thereby, the aromatic rings of the polyamide resin can be densely arranged. Therefore, the molecules of the alkali-soluble resin (A) and the metal molecules can be frozen in a more strongly bonded coordination, and the adhesion can be improved.

[0071] In the formulas (DA1) and (PA3), R 5 ~R 10Specific examples of the organic group having 1 to 30 carbon atoms include alkyl groups such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, neopentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, etc.; alkenyl groups such as allyl group, pentenyl group, vinyl group, etc.; alkynyl groups such as ethynyl group, etc.; alkylidene groups such as methylidene group, ethylidene group, etc.; aryl groups such as phenyl group, naphthyl group, anthracenyl group, etc.; aralkyl groups such as benzyl group, phenethyl group, etc.; cycloalkyl groups such as adamantyl group, cyclopentyl group, cyclohexyl group, cyclooctyl group, etc.; and alkaryl groups such as tolyl group, xylyl group, etc.

[0072] Specific examples of the diamine monomer represented by the formula (DA1) include 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, 4,4'-methylenebis(2-amino-3,6-dimethylphenol), 4,4'-methylenebis(2-aminophenol), 1,1-bis(3-amino-4-hydroxyphenyl)ethane, 3,3'-diamino-4,4'-dihydroxydiphenyl ether, etc. By using these diamine monomers, the aromatic rings of the polyamide resin are densely arranged. Therefore, the molecules of the alkali-soluble resin (A) and the metal molecules can be more strongly bonded in a coordinated manner, and the molecular structure can be frozen, improving the adhesion. Note that as the diamine monomer, one or more of the above specific examples can be used in combination. The structural formulas of these diamine monomers are shown below.

[0073] [Chemical formula]

[0074] (Dicarboxylic acid monomer) The dicarboxylic acid monomer used for polymerization is not limited. For example, it is preferable to use a dicarboxylic acid monomer containing an aromatic ring in its structure.

[0075] As the dicarboxylic acid monomer containing an aromatic ring, for example, those represented by the formula (DC1) are preferably used. By producing a polyamide resin using such a dicarboxylic acid monomer as a raw material, the conformation of the polyamide resin can be controlled and the dispersibility in a mixed solvent can be improved. Then, due to the improved dispersibility, a composition capable of forming a resin film that hardly generates foreign substances even in a high-temperature and high-humidity environment can be obtained.

[0076] [Chemical formula]

[0077] In formula (DC1), R 11 is a group formed by one or more atoms selected from the group consisting of a hydrogen atom, a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a silicon atom, a chlorine atom, a fluorine atom, and a bromine atom. R 12 ~R 19 each independently represents hydrogen or an organic group having 1 to 30 carbon atoms.

[0078] For example, when the dicarboxylic acid monomer represented by the formula (DC1) is used, the polyamide resin typically contains a structural unit represented by the formula (PA4). In formula (PA4), the definitions of R 11 , R 12 ~R 19 are the same as those in formula (DC1).

[0079] [Chemical formula]

[0080] R 11 in formula (DC1) and formula (PA4) is a group formed by one or more atoms selected from the group consisting of a hydrogen atom, a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a silicon atom, a chlorine atom, a fluorine atom, and a bromine atom.

[0081] In addition, R 11is a divalent group. Here, the divalent group indicates the valence. That is, R 11 indicates that there are two bonds by which it binds to other atoms.

[0082] When R in formula (DC1) and formula (PA4) 11 contains a carbon atom, R 11 is, for example, a group having 1 to 30 carbon atoms, preferably a group having 1 to 10 carbon atoms, more preferably a group having 1 to 5 carbon atoms, and even more preferably a group having 1 to 3 carbon atoms.

[0083] When R in formula (DC1) and formula (PA4) 11 contains a carbon atom, R 11 specifically includes an alkylene group, an arylene group, a halogen-substituted alkylene group, a halogen-substituted arylene group, and the like.

[0084] The alkylene group may be, for example, a linear alkylene group or a branched-chain alkylene group. Specific examples of the linear alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, a heptylene group, an octylene group, a nonylene group, a decanylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, and the like. Specific examples of the branched-chain alkylene group include alkylmethylene groups such as -C(CH3)2-, -CH(CH3)-, -CH(CH2CH3)-, -C(CH3)(CH2CH3)-, -C(CH3)(CH2CH2CH3)-, -C(CH2CH3)2-; alkylethylene groups such as -CH(CH3)CH2-, -CH(CH3)CH(CH3)-, -C(CH3)2CH2-, -CH(CH2CH3)CH2-, -C(CH2CH3)2-CH2-, and the like.

[0085] Specific examples of the arylene group include a phenylene group, a biphenylene group, a naphthylene group, an anthrylene group, and those in which two or more arylene groups are bonded to each other.

[0086] As the halogen-substituted alkylene group and the halogen-substituted arylene group, specifically, those obtained by substituting the hydrogen atoms in the above-described alkylene group and arylene group with halogen atoms such as fluorine atom, chlorine atom, and bromine atom can be used. Among these, those obtained by substituting the hydrogen atoms with fluorine atoms are preferably used.

[0087] In the formulas (DC1) and (PA4), R 11 When it does not contain a carbon atom, examples of R 11 include a group consisting of an oxygen atom or a sulfur atom.

[0088] In the formulas (DC1) and (PA4), R 12 ~R 19 are each independently hydrogen or an organic group having 1 to 30 carbon atoms. For example, it is preferably hydrogen or an organic group having 1 to 10 carbon atoms, more preferably hydrogen or an organic group having 1 to 5 carbon atoms, still more preferably hydrogen or an organic group having 1 to 3 carbon atoms, and particularly preferably hydrogen.

[0089] In the formulas (DC1) and (PA4), R 12 ~R 19 Specific examples of the organic group having 1 to 30 carbon atoms include alkyl groups such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, neopentyl group, hexyl group, heptyl group, octyl group, nonyl group, and decyl group; alkenyl groups such as allyl group, pentenyl group, and vinyl group; alkynyl groups such as ethynyl group; alkylidene groups such as methylidene group and ethylidene group; aryl groups such as phenyl group, naphthyl group, and anthracenyl group; aralkyl groups such as benzyl group and phenethyl group; cycloalkyl groups such as adamantyl group, cyclopentyl group, cyclohexyl group, and cyclooctyl group; and alkaryl groups such as tolyl group and xylyl group.

[0090] As the dicarboxylic acid monomer, specifically, diphenyl ether 4,4'-dicarboxylic acid, isophthalic acid, terephthalic acid, 4,4'-biphenyldicarboxylic acid, etc. can be used. As the dicarboxylic acid monomer, among the above specific examples, it is preferable to use diphenyl ether 4,4'-dicarboxylic acid or isophthalic acid, and it is more preferable to use diphenyl ether 4,4'-dicarboxylic acid. Thereby, the aromatic rings of the polyamide resin are densely arranged. Therefore, the molecules of the alkali-soluble resin (A) and the metal molecules can be frozen in a more strongly bonded coordination, and the adhesion can be improved.

[0091] Incidentally, it is preferable to modify the amino group present at the terminal of the polyamide resin simultaneously with the polymerization step (S1) or after the polymerization step (S1). The modification can be carried out, for example, by reacting a specific acid anhydride or a specific monocarboxylic acid with a diamine monomer or a polyamide resin. Therefore, it is preferable that the amino group at the terminal of the polyamide resin is modified by the above specific acid anhydride or the above specific monocarboxylic acid. The above specific acid anhydride and the above specific monocarboxylic acid have one or more functional groups selected from the group consisting of an alkenyl group, an alkynyl group, and a hydroxyl group. Further, as the above specific acid anhydride and the specific monocarboxylic acid, those containing a nitrogen atom are preferably used, for example. Thereby, the wettability between the photosensitive resin composition after post-baking and metals such as Cu and Al can be improved.

[0092] Specific examples of the above-mentioned specific acid anhydrides include maleic anhydride, citraconic anhydride, 2,3-dimethylmaleic anhydride, 4-cyclohexene-1,2-dicarboxylic anhydride, exo-3,6-epoxy-1,2,3,6-tetrahydrophthalic anhydride, 3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, 5-norbornene-2,3-dicarboxylic anhydride, methyl-5-norbornene-2,3-dicarboxylic anhydride, itaconic anhydride, het acid anhydride, 4-ethynylphthalic anhydride, 4-phenylethynylphthalic anhydride, 4-hydroxyphthalic anhydride, and the like. As the specific acid anhydride, one or more of the above specific examples can be used in combination.

[0093] When the amino group present at the end of the polyamide resin is modified with a cyclic specific acid anhydride, the cyclic specific acid anhydride undergoes ring opening. Here, after modifying the polyamide resin, a structural unit derived from the cyclic specific acid anhydride may be cyclized to form an imide ring. Examples of the cyclization method include heat treatment.

[0094] Specific examples of the above-mentioned specific monocarboxylic acids include 5-norbornene-2-carboxylic acid, 4-hydroxybenzoic acid, 3-hydroxybenzoic acid, and the like. As the specific monocarboxylic acid, one or more of the above specific examples can be used in combination.

[0095] Also, the carboxyl groups present at the terminals of the polyamide resin may be modified simultaneously with the polymerization step (S1) or after the polymerization step (S1). The modification can be carried out, for example, by reacting a specific nitrogen atom-containing heteroaromatic compound with a dicarboxylic acid monomer or a polyamide resin. Therefore, it is preferable that the polyamide resin has carboxyl groups at the terminals modified with a specific nitrogen atom-containing heteroaromatic compound. The specific nitrogen atom-containing heteroaromatic compound is a compound having one or more functional groups selected from the group consisting of 1-(5-1H-triazolyl)methylamino group, 3-(1H-pyrazolyl)amino group, 4-(1H-pyrazolyl)amino group, 5-(1H-pyrazolyl)amino group, 1-(3-1H-pyrazolyl)methylamino group, 1-(4-1H-pyrazolyl)methylamino group, 1-(5-1H-pyrazolyl)methylamino group, (1H-tetrazol-5-yl)amino group, 1-(1H-tetrazol-5-yl)methyl-amino group, and 3-(1H-tetrazol-5-yl)benz-amino group. Thereby, the number of lone pairs of electrons in the photosensitive resin composition can be increased. Therefore, the wettability between the photosensitive resin composition after pre-baking and post-baking and a metal such as Cu or Al can be improved.

[0096] Specific examples of the specific nitrogen atom-containing heteroaromatic compound include 5-aminotetrazole and the like.

[0097] 1.1.3.2. Low molecular weight component removal step (S2) Following the polymerization step (S1), it is preferable to perform a low molecular weight component removal step (S2) to remove low molecular weight components.

[0098] Specifically, an organic layer containing a mixture of low molecular weight components and a polyamide resin is concentrated by filtration or the like and then redissolved in an organic solvent such as water / isopropanol. Thereby, the precipitate can be filtered off to obtain a polyamide resin from which low molecular weight components have been removed.

[0099] Regarding the polyamide resin, for example, after the above-mentioned low-molecular-weight component removal step, it is preferable to prepare a photosensitive resin composition that is a varnish without going through a step of completely volatilizing the solvent to become dry. By this, it is possible to suppress a decrease in the dispersibility of the polyamide due to the interaction derived from the amide bond between the molecules of the polyamide resin. As a result, a composition capable of forming a resin film that hardly generates foreign matters even in a high-temperature and high-humidity environment can be obtained.

[0100] 1.2. Photosensitizer (B) The photosensitizer (B) generates active species by light and cures the photosensitive resin composition.

[0101] As the photosensitizer (B), known photosensitizers are used. Specifically, for example, alkylphenone compounds such as 2,2 - diethoxyacetophenone, 2,2 - dimethoxy - 2 - phenylacetophenone, 1 - hydroxycyclohexyl phenyl ketone, 2 - hydroxy - 2 - methyl - 1 - phenylpropan - 1 - one, 1 - [4 - (2 - hydroxyethoxy)phenyl] - 2 - hydroxy - 2 - methyl - 1 - propan - 1 - one, 2 - hydroxy - 1 - {4 - [4 - (2 - hydroxy - 2 - methylpropionyl)benzyl]phenyl} - 2 - methylpropan - 1 - one, 2 - methyl - 1 - (4 - methylthiophenyl) - 2 - morpholinopropan - 1 - one, 2 - benzyl - 2 - dimethylamino - 1 - (4 - morpholinophenyl) - butanone - 1, 2 - (dimethylamino) - 2 - [(4 - methylphenyl)methyl] - 1 - [4 - (4 - morpholinyl)phenyl] - 1 - butanone; benzophenone compounds such as benzophenone, 4,4’ - bis(dimethylamino)benzophenone, 2 - carboxybenzophenone; benzoin compounds such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether; thioxanthone compounds such as thioxanthone, 2 - ethylthioxanthone, 2 - isopropylthioxanthone, 2 - chlorothioxanthone, 2,4 - dimethylthioxanthone, 2,4 - diethylthioxanthone; halomethylated triazine compounds such as 2 - (4 - methoxyphenyl) - 4,6 - bis(trichloromethyl) - s - triazine, 2 - (4 - methoxynaphthyl) - 4,6 - bis(trichloromethyl) - s - triazine, 2 - (4 - ethoxynaphthyl) - 4,6 - bis(trichloromethyl) - s - triazine, 2 - (4 - ethoxycarbonylnaphthyl) - 4,6 - bis(trichloromethyl) - s - triazine; halomethylated oxadiazole compounds such as 2 - trichloromethyl - 5 - (2’ - benzofuryl) - 1,3,4 - oxadiazole, 2 - trichloromethyl - 5 - [β - (2’ - benzofuryl)vinyl] - 1,3,4 - oxadiazole, 4 - oxadiazole, 2 - trichloromethyl - 5 - furyl - 1,3,4 - oxadiazole;Imidazole compounds such as 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis(2,4-dichlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis(2,4,6-trichlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole; Oxime ester compounds such as 1,2-octanedione, 1-[4-(phenylthio)phenyl]-2-(O-benzoyloxime), ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]-, 1-(O-acetoxime); Naphthoquinone compounds such as 1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,2-naphthoquinonediazide-5-sulfonic acid ester; Titanocene compounds such as bis(η5-2,4-cyclopentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrol-1-yl)-phenyl)titanium; Benzoic acid ester compounds such as p-dimethylaminobenzoic acid, p-diethylaminobenzoic acid; Acridine compounds such as 9-phenylacridine, etc. are mentioned. Further, as the photosensitizer (B), one or a mixture of two or more of the above photosensitizers is used. Among these, naphthoquinone compounds are particularly preferably used.;

[0102] The lower limit of the content of the photosensitizer (B) is preferably 1 part by mass or more, more preferably 5 parts by mass or more, still more preferably 10 parts by mass or more, and particularly preferably 15 parts by mass or more with respect to 100 parts by mass of the alkali-soluble resin (A). When the content of the photosensitizer (B) is within the above range, the photosensitive resin composition has appropriate sensitivity and enhanced curability.

[0103] The upper limit of the content of the photosensitizer (B) is preferably 30 parts by mass or less, more preferably 25 parts by mass or less, still more preferably 20 parts by mass or less with respect to 100 parts by mass of the alkali-soluble resin (A). When the content of the photosensitizer (B) is within the above range, it is possible to avoid a decrease in the curability of the photosensitive resin composition.

[0104] 1.3. Surfactant (C) The photosensitive resin composition may contain a surfactant (C). By containing the surfactant (C), the coatability of the photosensitive resin composition and the flatness of the resin film formed from the photosensitive resin composition can be further enhanced.

[0105] Examples of the surfactant (C) include nonionic surfactants such as polyoxyethylene alkyl ethers like polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene aryl ethers like polyoxyethylene octyl phenyl ether and polyoxyethylene nonyl phenyl ether; polyoxyethylene dialkyl esters such as polyoxyethylene dilaurate and polyoxyethylene distearate; fluorosurfactants commercially available under names such as F-Top EF301, F-Top EF303, F-Top EF352 (manufactured by Shin-Akita Kasei Co., Ltd.), Megafac F171, Megafac F172, Megafac F173, Megafac F177, Megafac F444, Megafac F470, Megafac F471, Megafac F475, Megafac F482, Megafac F477 (manufactured by DIC Corporation), Fluorad FC-430, Fluorad FC-431, Novec FC4430, Novec FC4432 (manufactured by 3M Japan Limited), Surflon S-381, Surflon S-382, Surflon S-383, Surflon S-393, Surflon SC-101, Surflon SC-102, Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC-106 (manufactured by AGC Seimi Chemical Co., Ltd.); organosiloxane copolymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.); (meth)acrylic acid-based copolymers Polyflow No. 57, 95 (manufactured by Kyoeisha Chemical Co., Ltd.), etc.

[0106] As the surfactant (C), silicone surfactants (such as polyether-modified dimethylsiloxane, etc.) can also be preferably used. Specifically, as silicone surfactants, SH series, SD series and ST series of Toray Dow Corning, BYK series of Big Chemie Japan, KP series of Shin-Etsu Chemical Co., Ltd., Disform (registered trademark) series of NOF Corporation, TSF series of Toshiba Silicone Co., Ltd., etc. can be mentioned.

[0107] The surfactant (C) preferably contains an organically modified dimethylsiloxane represented by the formula (C-1). Thereby, even when the photosensitive resin composition absorbs moisture, the function of the surfactant (C) is less likely to deteriorate, and the solubility of the coating film formed using the photosensitive resin composition in the developer can be further enhanced. In addition, the organically modified dimethylsiloxane contributes to suppressing the generation of development residues (scum) even when the development rate of the coating film formed using the photosensitive resin composition is increased.

[0108]

Chemical formula

[0109] In the formula (C-1), X represents a polyether (polyoxyalkylene) group, a polyester group or an aralkyl group, and m and n each represent an integer of 1 or more and 100 or less. When X in the formula (C-1) is a polyether group, a polyether group represented by the formula (2-1) is preferably used as X.

[0110]

Chemical formula

[0111] In the formula (2-1), R 20 represents an alkyl group having 1 to 6 carbon atoms, and R 21represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkyl ether group having 1 to 6 carbon atoms, or an unsaturated alkyl ether group having 1 to 6 carbon atoms, EO represents an ethylene oxide group, and PO represents a propylene oxide group. o represents an integer of 1 or more, and p represents an integer of 0 or more. The order of EO and PO may be random.

[0112] Thereby, the solubility of the coating film formed using the photosensitive resin composition in the developer can be further enhanced. Further, a photosensitive resin composition can be obtained that particularly enhances the storage stability of the photosensitive resin composition and can form a resin film that hardly generates foreign substances even in a high-temperature and high-humidity environment.

[0113] When X in formula (C-1) contains a propylene oxide group, the lower limit of the molar ratio of the propylene oxide group to the total molar amount of the ethylene oxide group and the propylene oxide group is preferably 1% or more, more preferably 10% or more, and even more preferably 20% or more. On the other hand, the upper limit of the molar ratio of the propylene oxide group is preferably 99% or less, more preferably 90% or less, and even more preferably 80% or less. By setting the molar ratio of the propylene oxide group within the above range, the wettability with the metal can be improved. Further, the solubility of the coating film formed using the photosensitive resin composition in the developer can be further enhanced.

[0114] When X in formula (C-1) is a polyester group, as X, a polyester group represented by formula (2-2) is preferably used.

[0115]

Chemical formula

[0116] In formula (2-2), R 22 , R 23 , R 24 and R 25 each independently represent an alkyl group having 1 to 20 carbon atoms, and r represents an integer of 1 or more.

[0117] When X in formula (C-1) is an aralkyl group, as X, an aralkyl group represented by formula (2-3) is preferably used.

[0118]

Chemical formula

[0119] In formula (2-3), R 26 represents an alkyl group having 1 to 30 carbon atoms.

[0120] The lower limit of the ratio of m to the total of m and n represented by formula (C-1) is preferably 0.5% or more, more preferably 1% or more, still more preferably 5% or more, and particularly preferably 10% or more. On the other hand, the upper limit of the ratio of m is preferably 60% or less, more preferably 50% or less, still more preferably 40% or less, and particularly preferably 30% or less. By setting the ratio of m within the above range, the wettability with the metal can be improved. In addition, the solubility of the coating film formed using the photosensitive resin composition in the developer can be further enhanced.

[0121] The lower limit of the content of the surfactant (C) is preferably 0.1 part by mass or more, more preferably 0.5 part by mass or more, and still more preferably 1.0 part by mass or more with respect to 100 parts by mass of the alkali-soluble resin (A). By the content of the surfactant (C) being within the above range, the flatness of the coating film formed using the photosensitive resin composition can be further enhanced.

[0122] The upper limit of the content of the surfactant (C) is preferably 10 parts by mass or less, more preferably 5 parts by mass or less, and still more preferably 3 parts by mass or less with respect to 100 parts by mass of the alkali-soluble resin (A). By the content of the surfactant (C) being within the above range, the coatability of the photosensitive resin composition can be improved.

[0123] 1.4. Adhesion promoter (D) The photosensitive resin composition may contain an adhesion aid (D). Examples of the adhesion aid (D) include triazole compounds, silane compounds, imide compounds, etc., and silane compounds are particularly preferably used. By using these, the affinity between the photosensitive resin composition and the substrate can be improved.

[0124] Specific examples of the triazole compound include 4-amino-1,2,4-triazole, 4H-1,2,4-triazol-3-amine, 4-amino-3,5-di-2-pyridyl-4H-1,2,4-triazole, 3-amino-5-methyl-4H-1,2,4-triazole, 4-methyl-4H-1,2,4-triazol-3-amine, 3,4-diamino-4H-1,2,4-triazole, 3,5-diamino-4H-1,2,4-triazole, 1,2,4-triazole-3,4,5-triamine, 3-pyridyl-4H-1,2,4-triazole, 4H-1,2,4-triazole-3-carboxamide, 3,5-diamino-4-methyl-1,2,4-triazole, 3-pyridyl-4-methyl-1,2,4-triazole, 4-methyl-1,2,4-triazole-3-carboxamide and other 1,2,4-triazoles. As the triazole compound, one or a combination of two or more of the above specific examples can be used.

[0125] As silane compounds, specifically, vinyl silanes such as vinyltrimethoxysilane and vinyltriethoxysilane; epoxy silanes such as 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 3-glycidoxypropyltriethoxysilane; styryl silanes such as p-styryltrimethoxysilane; methacryl silanes such as 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, and 3-methacryloxypropyltriethoxysilane; acrylic silanes such as 3-acryloxypropyltrimethoxysilane; isocyanurate silane; alkyl silane; ureido silanes such as 3-ureidopropyltrialkoxysilane; mercapto silanes such as 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane; isocyanate silanes such as 3-isocyanatopropyltriethoxysilane, etc.;Condensates of cyclohexene-1,2-dicarboxylic anhydride and 3-aminopropyltriethoxysilane, condensates of 3,3',4,4'-benzophenonetetracarboxylic dianhydride and 3-aminopropyltriethoxysilane, condensates of 4,4'-oxydiphthalic anhydride and 3-aminopropyltriethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, N,N'-bis[3-(trimethoxysilyl)propyl]ethylenediamine, N,N'-bis-(3-triethoxysilylpropyl)ethylenediamine, N,N'-bis[3-(methyldimethoxysilyl)propyl]ethylenediamine, N,N'-bis[3-(methyldiethoxysilyl)propyl]ethylenediamine, N,N'-bis[3-(dimethoxymethylsilyl)propyl]ethylenediamine, N-[3-(methyldimethoxysilyl)propyl]-N'-[3-(trimethoxysilyl)propyl]ethylenediamine, N,N'-bis[3-(trimethoxysilyl)propyl]diaminopropane, N,N'-bis[3-(trimethoxysilyl)propyl]diaminohexane, N,N'-bis[3-(trimethoxysilyl)propyl]diethylenetriamine and other aminosilane compounds can be mentioned. As the silane compound, one or more of the above specific examples can be used in combination.;

[0126] Examples of the imide compound include the compounds exemplified below. These can be used alone or in combination of two or more.;

[0127]

Chemical formula

[0128] The silane compound particularly improves the affinity between the photosensitive resin composition and the substrate. Thereby, a photosensitive resin composition capable of forming a more reliable resin film can be obtained. Further, these compounds contribute to suppressing the generation of development residues (scum) even when the development rate of the coating film formed using the photosensitive resin composition is increased.

[0129] The lower limit of the content of the adhesion aid (D) in the photosensitive resin composition is preferably 0.1 part by mass or more, more preferably 1.0 part by mass or more, still more preferably 2.0 part by mass or more, and particularly preferably 3.0 part by mass or more with respect to 100 parts by mass of the alkali-soluble resin (A). The upper limit of the content of the adhesion aid (D) in the photosensitive resin composition is preferably 50 parts by mass or less, more preferably 45 parts by mass or less, and still more preferably 40 parts by mass or less with respect to 100 parts by mass of the alkali-soluble resin (A).

[0130] By setting the content of the adhesion aid (D) within the above range, the adhesion aid is suitably dispersed in the photosensitive resin composition, the adhesion of the photosensitive resin composition to the adherend can be improved, and a photosensitive resin composition capable of forming a resin film excellent in adhesion to the substrate even in a high-temperature and high-humidity environment can be obtained. Further, it is possible to suppress a decrease in the solubility of the coating film formed using the photosensitive resin composition in the developer due to the adhesion aid (D).

[0131] The adhesion aid (D) may contain a titanium coupling agent, an aluminum coupling agent, or a zirconium coupling agent.

[0132] 1.5. Dissolution regulator (E) The photosensitive resin composition may contain a dissolution regulator (E). Examples of the dissolution regulator (E) include low molecular weight compounds having one or more alkali-soluble groups. The molecular weight of such a low molecular weight compound is preferably 50 or more and 1000 or less, more preferably 150 or more and 750 or less, and even more preferably 200 or more and 500 or less. By including such a low molecular weight compound in the dissolution regulator (E), the solubility of the coating film formed using the photosensitive resin composition in the developer can be further enhanced.

[0133] Examples of the alkali-soluble group of the dissolution regulator (E) include a carboxyl group, a phenolic hydroxyl group, etc. Among these, from the viewpoint of the affinity with an alkali developer, the alkali-soluble group is preferably a phenolic hydroxyl group. That is, the dissolution regulator (E) preferably contains a low molecular weight compound having one or more phenolic hydroxyl groups. By including such a low molecular weight compound in the dissolution regulator (E), even if the development rate of the coating film formed using the photosensitive resin composition becomes fast, it contributes to suppressing the generation of development residues (scum). From the viewpoint of ensuring good coatability, the number of alkali-soluble groups in one molecule of the dissolution regulator (E) is preferably 1 to 6.

[0134] Specific examples of the dissolution regulator (E) include 4-ethylresorcinol, 2-propylresorcinol, 4-butylresorcinol, 4-hexylresorcinol, 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 4,4'-dihydroxydiphenyl sulfide, 3,3'-dihydroxydiphenyl disulfide, 4,4'-dihydroxydiphenyl sulfone, 2,2'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenylmethane, 2,2'-dihydroxydiphenyl ether, 4,4'-dihydroxydiphenyl ether, biphenol, 2,2'-methylenebisphenol, 4,4'-(1,3-dimethylbutylidene)diphenol, 4,4'-(2-ethylhexylidene)diphenol, 4,4'-ethylidenebisphenol, 2,2'-ethylenedioxydiphenol, 3,3'-ethylenedioxydiphenol, biphenyl-2,3',4,5',6-pentaol (phloroglucide), thiodiethylene bis[3-(3,5-di-tert-butyl-4-hydroxy-phenyl)propionate], 1,5-bis(o-hydroxyphenoxy)-3-oxapentane, bisphenol A, bisphenol F, and the like. Note that only one of the above compounds may be used as the dissolution regulator (E), or two or more thereof may be used in combination.

[0135] The lower limit of the content of the dissolution regulator (E) is preferably 0.5 part by mass or more, more preferably 1.0 part by mass or more, still more preferably 1.5 part by mass or more, and particularly preferably 2.0 part by mass or more with respect to 100 parts by mass of the alkali-soluble resin (A). By the content of the dissolution regulator (E) being within the above range, the development rate of the coating film can be further improved.

[0136] The upper limit of the content of the dissolution regulator (E) is preferably 30 parts by mass or less, more preferably 25 parts by mass or less, and still more preferably 20 parts by mass or less with respect to 100 parts by mass of the alkali-soluble resin (A). By the content of the dissolution regulator (E) being within the above range, the curability of the photosensitive resin composition can be further improved.

[0137] 1.6. Thermal crosslinking agent (F) The photosensitive resin composition may contain a thermal crosslinking agent (F) capable of reacting with the alkali-soluble resin (A) by heat. Thereby, for the cured product obtained by post-baking the photosensitive resin composition, mechanical properties such as tensile elongation at break can be improved. In addition, the sensitivity of the resin film formed from the photosensitive resin composition can be improved. Furthermore, the thermal crosslinking agent (F) contributes to suppressing the generation of development residues (scum) even when the development speed of the coating film formed using the photosensitive resin composition is increased.

[0138] As the heat crosslinking agent (F), specifically, compounds having a methylol group such as 1,2-benzenedimethanol, 1,3-benzenedimethanol, 1,4-benzenedimethanol (paraxylene glycol), 1,3,5-benzenetric methanol, 4,4-biphenyldimethanol, 2,6-pyridinedimethanol, 2,6-bis(hydroxymethyl)-p-cresol, 4,4'-methylenebis(2,6-dialkoxymethylphenol); compounds having an alkoxymethyl group such as 1,4-bis(methoxymethyl)benzene, 1,3-bis(methoxymethyl)benzene, 4,4'-bis(methoxymethyl)biphenyl, 3,4'-bis(methoxymethyl)biphenyl, 3,3'-bis(methoxymethyl)biphenyl, methyl 2,6-naphthalenedicarboxylate, 4,4'-methylenebis(2,6-dimethoxymethylphenol); methylol melamine compounds represented by hexamethylol melamine, hexabutanol melamine, etc.; alkoxymelamine compounds such as hexamethoxymelamine; alkoxymethyl glycoluril compounds such as tetramethoxymethyl glycoluril; methylol benzoguanamine compounds, methylol urea compounds such as dimethylol ethylene urea; cyano compounds such as dicyanoaniline, dicyanophenol, cyanophenylsulfonic acid; isocyanate compounds such as 1,4-phenylene diisocyanate, 3,3'-dimethyldiphenylmethane-4,4'-diisocyanate; epoxy group-containing compounds such as ethylene glycol diglycidyl ether, bisphenol A diglycidyl ether, triglycidyl isocyanurate, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene-based epoxy resin, biphenyl type epoxy resin, phenol novolac resin type epoxy resin; maleimide compounds such as N,N'-1,3-phenylene dimaleimide, N,N'-methylenebis maleimide, etc. As the heat crosslinking agent, one or more of the above specific examples can be used in combination.

[0139] The lower limit of the content of the thermosetting agent (F) is preferably 0.1 part by mass or more, more preferably 0.5 part by mass or more, still more preferably 1 part by mass or more, and particularly preferably 3 parts by mass or more with respect to 100 parts by mass of the alkali-soluble resin (A). The upper limit of the content of the thermosetting agent (F) is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, still more preferably 10 parts by mass or less with respect to 100 parts by mass of the alkali-soluble resin (A). Thereby, even when the thermosetting agent (F) has a solvating functional group such as a phenolic hydroxyl group, it is possible to suppress a decrease in chemical resistance after post-baking.

[0140] 1.7. Solvent (G) The photosensitive resin composition contains a solvent (G). Thereby, the photosensitive resin composition is in a varnish form and has good coatability.

[0141] The solvent (G) is used such that the concentration of the total solid content (non-volatile component) in the photosensitive resin composition is preferably 10% by mass or more and 60% by mass or less, more preferably 20% by mass or more and 50% by mass or less, still more preferably 30% by mass or more and 48% by mass or less. By setting it within this range, each component can be sufficiently dissolved or dispersed, and good coatability can be ensured.

[0142] As described above, the solvent (G) is mainly composed of a pyrrolidone-based solvent. Specifically, the mass ratio of the pyrrolidone-based solvent in the solvent (G) is 95% or more, preferably 97% or more, more preferably 99% or more. When the mass ratio of the pyrrolidone-based solvent in the solvent (G) is within the above range, when the solvent (G) remains in the coating film formed using the photosensitive resin composition, the development rate of the coating film can be increased. Thereby, the tact time for forming the resin film can be shortened, so that the manufacturing efficiency of the electronic device can be increased.

[0143] Examples of pyrrolidone solvents include 2-pyrrolidone, N-methyl-2-pyrrolidone (NMP), N-ethyl-2-pyrrolidone (NEP), N-propyl-2-pyrrolidone (NProP), N-butyl-2-pyrrolidone (NBP), N-cyclohexyl-2-pyrrolidone (NCP), N-vinyl-2-pyrrolidone (NVP), etc. One or more of these may be used. Among these, the pyrrolidone solvent preferably has NMP as the main component. NMP can contribute to particularly enhancing the development rate of the coating film while more effectively suppressing development residues (scum). Thereby, a resin film with high patterning accuracy can be formed while shortening the tact time for the formation of the resin film. The mass ratio of NMP in the pyrrolidone solvent is preferably 60% or more, and more preferably 80% or more.

[0144] 1.8. Other Components In addition to the above-described constituent components, the photosensitive resin composition may contain additives such as fillers, sensitizers, antioxidants, film-forming agents, stabilizers, etc.

[0145] The filler is appropriately selected according to the mechanical properties and thermal properties required for the resin film formed by the photosensitive resin composition.

[0146] Specific examples of the filler include inorganic fillers or organic fillers. Specific examples of the inorganic filler include silica such as fused crushed silica, fused spherical silica, crystalline silica, secondary aggregated silica, fine silica; metal compounds such as alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, silicon carbide, aluminum hydroxide, magnesium hydroxide, titanium white; talc; clay; mica; glass fiber, etc. Among the above specific examples, one or more of them can be used in combination for the inorganic filler.

[0147] Specific examples of the organic filler include organosilicon powder, polyethylene powder, etc. Among the above specific examples, one or a combination of two or more can be used for the organic filler.

[0148] 1.9. Method for preparing photosensitive resin composition The method for preparing the photosensitive resin composition is not limited, and a known method is used according to the constituent components.

[0149] For example, it can be prepared by mixing the above respective constituent components and dissolving the solid content in a solvent (G). Thereby, a varnish-like photosensitive resin composition can be obtained.

[0150] Also, from the viewpoint of suppressing the moisture absorption of the photosensitive resin composition as much as possible, the preparation of the photosensitive resin composition is preferably carried out under a nitrogen atmosphere.

[0151] 2. Electronic device The resin film formed using the photosensitive resin composition is used in, for example, an electronic device. Examples of the electronic device include elements, devices, end products, etc. to which electronic engineering technologies are applied, such as semiconductor devices, MEMS devices, electronic components, printed wiring boards, display devices, and information communication terminals.

[0152] FIG. 1 is a cross-sectional view showing a semiconductor device 1 to which an electronic device according to an embodiment is applied. FIG. 2 is a partially enlarged view of the region surrounded by the dashed line in FIG. 1. In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side as "lower".

[0153] The semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted thereon.

[0154] The through - electrode substrate 2 includes an insulating layer 21, a plurality of through - wirings 221 penetrating from the upper surface to the lower surface of the insulating layer 21, a semiconductor chip 23 embedded inside the insulating layer 21, a lower - layer wiring layer 24 provided on the lower surface of the insulating layer 21, an upper - layer wiring layer 25 provided on the upper surface of the insulating layer 21, and solder bumps 26 provided on the lower surface of the lower - layer wiring layer 24.

[0155] The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, bonding wires 33 electrically connecting the semiconductor chip 32 and the package substrate 31, a sealing layer 34 in which the semiconductor chip 32 and the bonding wires 33 are embedded, and solder bumps 35 provided on the lower surface of the package substrate 31.

[0156] And the semiconductor package 3 is laminated on the through - electrode substrate 2. Thereby, the solder bumps 35 of the semiconductor package 3 and the upper - layer wiring layer 25 of the through - electrode substrate 2 are electrically connected.

[0157] As described above, the through - wiring 221 shown in FIG. 2 is provided so as to penetrate the insulating layer 21. Thereby, the lower - layer wiring layer 24 and the upper - layer wiring layer 25 are electrically connected, enabling the lamination of the through - electrode substrate 2 and the semiconductor package 3, so that the high functionality of the semiconductor device 1 can be achieved.

[0158] The wiring layer 253 included in the upper - layer wiring layer 25 shown in FIG. 2 is connected to the through - wiring 221 and the solder bumps 35. Therefore, the upper - layer wiring layer 25 is electrically connected to the semiconductor chip 23, functions as a redistribution layer of the semiconductor chip 23, and also functions as an interposer intervening between the semiconductor chip 23 and the package substrate 31.

[0159] The resin film formed using the photosensitive resin composition according to this embodiment can be used, for example, to form the insulating layer of the redistribution layer.

[0160] In addition to the through-wiring 221, the semiconductor device 1 shown in FIG. 1 also includes a through-wiring 222 provided so as to penetrate the insulating layer 21 located on the upper surface of the semiconductor chip 23. Thereby, electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be achieved.

[0161] 3. Manufacturing Method of Electronic Device Next, a method for manufacturing an electronic device according to an embodiment will be described. In the following description, the method for manufacturing the semiconductor device 1 will be described as an example.

[0162] The method for manufacturing an electronic device according to an embodiment is a method that uses the method for manufacturing a resin film according to an embodiment. As described above, the resin film is a cured film formed using a photosensitive resin composition.

[0163] FIG. 3 is a process diagram for explaining the method for manufacturing a resin film according to an embodiment. In the following description, an example in which the method for manufacturing a resin film according to an embodiment is applied to the manufacture of the upper wiring layer 25 will be described.

[0164] The method for manufacturing a resin film shown in FIG. 3 includes a coating film forming step S102, a pre-baking step S104, an exposure step S106, a development step S108, and a curing step S110.

[0165] 3.1. Coating Film Forming Step In the coating film forming step S102, a varnish-like photosensitive resin composition is applied onto a substrate (on the insulating layer 21 and on the semiconductor chip 23). Thereby, a liquid film of the photosensitive resin composition is obtained. Next, the liquid film of the photosensitive resin composition is dried. Thereby, a photosensitive coating film is obtained. Note that the formation of the photosensitive coating film may be replaced by placing a photosensitive resin film formed by previously forming the photosensitive resin composition into a film.

[0166] 3.2. Pre-baking Step In the pre-baking step S104, a pre-exposure heat treatment (pre-baking) is performed on the photosensitive coating film. As a result, the molecules contained in the photosensitive coating film are stabilized, and the reaction in the subsequent exposure step S106 can be stabilized and the contrast can be increased. As a result, the generation of development residues (scum) in the subsequent development step S108 can be effectively suppressed.

[0167] The temperature of the pre-baking is preferably higher than 120°C and lower than or equal to 140°C, more preferably higher than or equal to 125°C and lower than or equal to 135°C. If the temperature of the pre-baking is lower than the lower limit value, the purpose of stabilizing the molecules by pre-baking may not be achieved. On the other hand, if the temperature of the pre-baking exceeds the upper limit value, the movement of the photoacid generator becomes too active, and the contrast may decrease in the subsequent exposure step S106.

[0168] The time of the pre-baking is appropriately set according to the temperature of the pre-baking, but at the above temperature, it is preferably 1 minute or more and 10 minutes or less, more preferably 2 minutes or more and 8 minutes or less, and still more preferably 3 minutes or more and 6 minutes or less. If the time of the pre-baking is less than the lower limit value, the heating time is insufficient, and the purpose of stabilizing the molecules by pre-baking may not be achieved. On the other hand, if the time of the pre-baking exceeds the upper limit value, the heating time is too long, and even if the temperature of the pre-baking is within the above range, the contrast may decrease in the subsequent exposure step S106.

[0169] The atmosphere of the pre-baking is not particularly limited. It may be an inert gas atmosphere, a reducing gas atmosphere, etc., but it is set under the atmosphere in consideration of work efficiency and the like.

[0170] The atmospheric pressure of the pre-baking is not particularly limited. It may be under reduced pressure or under pressure, but it is set to normal pressure in consideration of work efficiency and the like. Note that normal pressure refers to a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[0171] 3.3. Exposure step In the exposure process S106, an exposure treatment is performed on the pre-baked photosensitive coating film. For example, a mask is placed on the photosensitive coating film, and light (actinic radiation) is irradiated through the mask. Thereby, an exposure treatment is performed on the photosensitive coating film according to the pattern of the mask.

[0172] Thereafter, if necessary, a post-exposure heat treatment may be performed on the photosensitive coating film that has been subjected to the exposure treatment.

[0173] 3.4. Development process In the development process S108, a development treatment is performed on the photosensitive coating film that has been subjected to the exposure treatment. Thereby, the photosensitive coating film is developed according to the pattern of the mask, and a patterned resin film is obtained. Since the photosensitive coating film is a coating film formed using the photosensitive resin composition described above, the development rate is high. Therefore, the time required for the development process S108 can be sufficiently shortened. Further, by setting the pre-bake conditions within the above range, the patterning accuracy of the patterned resin film can be improved, and the generation of development residues (scum) can be suppressed. Examples of the developer include organic developers, water-soluble developers, and the like.

[0174] 3.5. Curing process In the curing process S110, the photosensitive coating film remaining after development is heated and cured (curing treatment). Thereby, a resin film is obtained.

[0175] The conditions of the curing treatment are not particularly limited, but the heating temperature is about 160 to 250 ° C and the heating time is about 30 to 240 minutes. Thereby, while suppressing the thermal influence on the semiconductor chip 23, the photosensitive coating film can be cured to obtain a resin film.

[0176] A wiring layer 253 is formed on the resin film thus formed and covered with another resin film, whereby the upper wiring layer 25 is obtained.

[0177] According to the method as described above, a resin film patterned with high precision can be efficiently manufactured. Therefore, by using such a method for manufacturing a resin film, the manufacturing efficiency of an electronic device can be enhanced.

[0178] 4. Effects Exhibited by the Embodiment As described above, the photosensitive resin composition according to the embodiment includes an alkali-soluble resin (A), a photosensitizer (B), and a solvent (G). Further, the alkali-soluble resin (A) includes a polyamide resin, and in the solvent (G), the mass ratio of the pyrrolidone-based solvent is 95% or more.

[0179] According to such a configuration, since the pyrrolidone-based solvent remains in the coating film formed using the photosensitive resin composition, the development rate when the coating film is developed can be increased. Thereby, the manufacturing efficiency of an electronic device including a resin film manufactured using the coating film can be enhanced. Also, the generation of development residues (scum) can be suppressed. Thereby, a high-quality resin film can be obtained.

[0180] The pyrrolidone-based solvent is preferably N-methyl-2-pyrrolidone (NMP). According to such a configuration, while the development rate of the coating film can be particularly increased, development residues (scum) can be more effectively suppressed.

[0181] The photosensitive resin composition according to the embodiment may include a surfactant (C). According to such a configuration, the coatability of the photosensitive resin composition and the flatness of the resin film formed by the photosensitive resin composition can be further enhanced.

[0182] The surfactant (C) may include an organically modified dimethylsiloxane represented by the formula (C-1).

[0183]

Chemical formula

[0184] According to such a configuration, even when the photosensitive resin composition absorbs moisture, the function of the surfactant (C) is less likely to deteriorate, and the solubility of the coating film formed using the photosensitive resin composition in the developer can be further increased. In addition, the organically modified dimethylsiloxane contributes to suppressing the generation of development residues (scum) even when the development rate of the coating film formed using the photosensitive resin composition is increased.

[0185] The photosensitive resin composition according to the above embodiment may contain an adhesion aid (D). According to such a configuration, the affinity between the photosensitive resin composition and the substrate can be improved.

[0186] The adhesion aid (D) may contain a silane compound. According to such a configuration, the affinity between the photosensitive resin composition and the substrate can be particularly improved. As a result, a photosensitive resin composition capable of forming a more reliable resin film can be obtained. In addition, these compounds contribute to suppressing the generation of development residues (scum) even when the development rate of the coating film formed using the photosensitive resin composition is increased.

[0187] The photosensitive resin composition according to the above embodiment may contain a dissolution regulator (E). According to such a configuration, it contributes to suppressing the generation of development residues (scum) even when the development rate of the coating film formed using the photosensitive resin composition is increased.

[0188] The dissolution regulator (E) preferably contains a low molecular compound having one or more phenolic hydroxyl groups.

[0189] According to such a configuration, it contributes to suppressing the generation of development residues (scum) even when the development rate of the coating film formed using the photosensitive resin composition is increased.

[0190] The method for manufacturing a resin film according to the above embodiment includes a coating film forming step S102, a pre-baking step S104, an exposure step S106, a development step S108, and a curing step S110. In the coating film forming step S102, the photosensitive resin composition according to the above embodiment is applied to a substrate to obtain a photosensitive coating film. In the pre-baking step S104, the photosensitive coating film is pre-baked by heating at a temperature above 120°C and below or equal to 140°C for 1 minute or more and 10 minutes or less. In the exposure step S106, the pre-baked photosensitive coating film is subjected to an exposure treatment. In the development step S108, the photosensitive coating film subjected to the exposure treatment is subjected to a development treatment. In the curing step S110, the photosensitive coating film remaining after development is heated and cured to obtain a resin film. According to such a configuration, a high-quality resin film can be efficiently manufactured.

[0191] The method for manufacturing an electronic device according to the above embodiment uses the method for manufacturing a resin film according to the above embodiment. According to such a configuration, an electronic device can be efficiently manufactured.

[0192] As described above, the photosensitive resin composition, the method for manufacturing a resin film, and the method for manufacturing an electronic device according to the present invention have been described based on the above embodiments. However, the present invention is not limited to the above embodiments. For example, the photosensitive resin composition of the present invention may be one to which an arbitrary component is added to the above embodiment.

[0193] Also, the method for manufacturing a resin film and the method for manufacturing an electronic device of the present invention may be those to which an arbitrary-purpose step is added to the above embodiment.

Examples

[0194] Next, specific examples of the present invention will be described. 5. Preparation of Photosensitive Resin Composition Each raw material shown in Table 1 was blended and stirred at room temperature to obtain a solution. The obtained solution was filtered through a filter with a pore size of 0.2 μm to prepare a varnish-like photosensitive resin composition.

[0195] Each raw material shown in Table 1 is as follows. · Alkali-soluble resin a1: A compound having a repeating unit represented by the following formula (A-1) (precursor of polybenzoxazole resin)

[0196] [Chemical formula]

[0197] Incidentally, the weight average molecular weight (Mw) of the above compound was 14,600, and the number average molecular weight (Mn) was 9,250.

[0198] · Photosensitizer b1: Naphthoquinone-based photosensitizer (manufactured by Toyo Gosei Co., Ltd., product name: Tek-300)

[0199] · Surfactant c1: Polyether-modified polydimethylsiloxane (manufactured by BYK-Chemie Japan, BYK-349) · Surfactant c2: Fluorine-based surfactant (manufactured by 3M Japan, FC4430)

[0200] · Adhesion promoter d1: 3-Methacryloxypropyltrimethoxysilane · Adhesion promoter d2: 3-Glycidoxypropyltriethoxysilane · Adhesion promoter d3: KBM-503P manufactured by Shin-Etsu Chemical Co., Ltd.

[0201] · Dissolution regulator e1: Phloroglucide (5 hydroxyl groups in one molecule) · Dissolution regulator e2: 4,4'-Dihydroxybiphenyl (with 2 hydroxyl groups in one molecule) · Thermal crosslinking agent f1: PXG (paraxylene glycol)

[0202] · Solvent g1: NMP (N-methyl-2-pyrrolidone) · Solvent g2: NBP (N-butyl-2-pyrrolidone) · Solvent g3: 2-Pyrrolidone · Solvent g4: GBL (γ-butyrolactone)

[0203] 6. Evaluation of the photosensitive resin composition The following evaluations were performed on the photosensitive resin compositions of each of the prepared examples and comparative examples.

[0204] 6.1. Development rate of the coating film The development rate of the coating film formed using each photosensitive resin composition was evaluated as follows.

[0205] First, the photosensitive resin composition was spin-coated on a silicon wafer to form a liquid film, and then the liquid film was dried to obtain a photosensitive coating film.

[0206] Next, pre-baking was performed on the photosensitive coating film. The conditions for pre-baking were 130 °C × 4 minutes under atmospheric pressure. The film thickness of the photosensitive coating film after pre-baking was recorded as the "initial film thickness (nm)".

[0207] Next, pattern masking was applied to the photosensitive coating film after pre-baking, and exposure treatment was performed using a broadband mask aligner. After exposure, a 2.38 mass% aqueous solution of tetramethylammonium hydroxide was used as the developer, and development treatment was performed at 23 °C for 90 seconds. Then, it was rinsed with pure water, and then the pattern masking was removed. As a result, a patterned photosensitive coating film with a film thickness of 5 μm was obtained. Thereafter, post-baking was performed at a temperature of 250 °C for 4 hours in a nitrogen atmosphere to cure the photosensitive coating film and obtain a resin film. Among the obtained resin films, the film thickness of the site to be removed by development was recorded as the "remaining film thickness (nm)". Also, the contact time between the photosensitive coating film and the developer was defined as the "development time (seconds)".

[0208] Next, the development rate was calculated using the following formula. Development rate (nm / second) = {Initial film thickness (nm) - Remaining film thickness (nm)} / Development time (seconds) Then, the calculated development rate was evaluated according to the following evaluation criteria. The evaluation results are shown in Table 1.

[0209] A: Fast development rate B: Slightly slow development rate, but no problem in practical use C: Slow development rate

[0210] 6.2. Development Residue (Scum) of Coating Film The occurrence status of development residue (scum) of the coating film formed using each photosensitive resin composition was evaluated as follows.

[0211] First, the photosensitive resin composition was spin-coated on a silicon wafer to form a liquid film, and then the liquid film was dried to obtain a photosensitive coating film.

[0212] Next, pre-baking was performed on the photosensitive coating film. The pre-baking conditions were 130 °C × 4 minutes under atmospheric pressure. The film thickness after pre-baking was 6 μm.

[0213] Next, for the obtained photosensitive coating film, a pattern with a line / space of 5 μm / 5 μm was exposed with an integrated light amount of 300 mJ / cm 2 After exposure, a 2.38 mass% aqueous solution of tetramethylammonium hydroxide was used as the developer, and after development treatment at 23 °C for 90 seconds, it was rinsed with pure water, and then the pattern masking was removed. Thereby, a patterned photosensitive coating film was obtained.

[0214] Next, the obtained pattern was magnified and observed with a microscope. And the observation results were evaluated according to the following evaluation criteria. The evaluation results are shown in Table 1.

[0215] A: Scum cannot be confirmed when observed with a microscope at a magnification of 100 times B: Scum cannot be confirmed when observed with a microscope at a magnification of 50 times, but scum can be confirmed when observed with a microscope at a magnification of 100 times C: Resolution of the line / space pattern is possible, but scum can be confirmed when observed with a microscope at a magnification of 50 times D: Resolution of the line / space pattern cannot be achieved due to scum

[0216]

Table 1

[0217] From the results shown in Table 1, the following was found. · By using a photosensitive resin composition containing a polyamide resin as the alkali-soluble resin (A) and a pyrrolidone-based solvent as the solvent (G), a photosensitive coating film with a high development rate and few development residues (scum) could be formed. · When NMP was used as the solvent (G), and when predetermined compounds were used as the surfactant (C), the adhesion aid (D), and the dissolution regulator (E), the above tendency was particularly prominent.

Explanation of symbols

[0218] 1 Semiconductor device 2 Through electrode substrate 3 Semiconductor package 21 Insulating layer 23 Semiconductor chip 24 Lower wiring layer 25 Upper wiring layer 26 Solder bump 31 Package substrate 32 Semiconductor chip 33 Bonding wire 34 Encapsulation layer 35 Solder bump 221 Through wiring 222 Through wiring 253 Wiring layer S102 Coating film formation process S104 Pre-baking process S106 Exposure process S108 Development process S110 Curing process

Claims

1. An alkali-soluble resin (A), a photosensitizer (B), and a solvent (G), wherein the alkali-soluble resin (A) contains a polyamide resin, and the solvent (G) is characterized in that the mass ratio of the pyrrolidone-based solvent is 95% or more, a photosensitive resin composition.

2. The photosensitive resin composition according to claim 1, wherein the pyrrolidone-based solvent is N-methyl-2-pyrrolidone (NMP).

3. The photosensitive resin composition according to claim 1 or 2, further comprising a surfactant (C).

4. The photosensitive resin composition according to claim 3, wherein the surfactant (C) contains an organically modified dimethylsiloxane represented by formula (C-1). 【Chemical 1】 (In formula (C-1), X represents a polyether group, a polyester group or an aralkyl group, and m and n each represent an integer of 1 or more and 100 or less.)

5. The photosensitive resin composition according to claim 1 or 2, further comprising an adhesion promoter (D).

6. The photosensitive resin composition according to claim 5, wherein the adhesion promoter (D) contains a silane compound.

7. The photosensitive resin composition according to claim 1 or 2, further comprising a dissolution regulator (E).

8. The photosensitive resin composition according to claim 7, wherein the dissolution regulator (E) contains a low molecular weight compound having one or more phenolic hydroxyl groups.

9. A step of applying the photosensitive resin composition according to claim 1 or 2 to a substrate to obtain a photosensitive coating film; a pre-baking step of heating the photosensitive coating film at a temperature exceeding 120°C and 140°C or less for 1 minute or more and 10 minutes or less; an exposure step of subjecting the pre-baked photosensitive coating film to an exposure treatment; a development step of subjecting the exposed photosensitive coating film to a development treatment; and a step of heating and curing the remaining photosensitive coating film after development to obtain a resin film, characterized by having a method for manufacturing a resin film.

10. A method for manufacturing an electronic device, characterized by using the method for manufacturing a resin film according to claim 9.

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